106 results about "Wafer dicing" patented technology

Provided is a method of dicing a wafer, the method including preparing a wafer having a plurality of device formation regions and a scribe lane region defining the plurality of device formation regions, forming a plurality of semiconductor devices in the plurality of device formation regions of the wafer, irradiating a first laser beam and a second laser beam of a wavelength different from the first laser beam along the scribe lane region to form a plurality of internal cracks in the wafer, and separating the plurality of semiconductor devices along the plurality of internal cracks, wherein the first laser beam includes a plurality of pulses sequentially emitted from a laser apparatus, and the second laser beam is continuous wave light emitted from the laser apparatus.

The application relates to the technical field of wafer dicing, and provides an adsorption work disc for a dicing machine, a wafer adsorption control method and the dicing machine. The adsorption work disc comprises a disc body and a sealing support. The disc body comprises a base and an adsorption part. The adsorption part is located above the base and is connected with the base to form a gas guide channel. The adsorption part comprises a plurality of adsorption units. The adsorption units are communicated with the gas guide channel. An installation groove is arranged at the edge area of the adsorption part. The installation groove is arranged at the edge of the adsorption work disc, and the sealing support is arranged in the groove. The sealing support supports the edge of the wafer. The sealing support has certain flexibility. When the wafer is adsorbed, the edge of the wafer will not be warped due to the reverse abutting force. Meanwhile, a relatively closed space is formed between the wafer and the adsorption part of the adsorption work disc and the sealing support, so that the adsorption efficiency and adsorption effect of the adsorption units on the middle area of the wafer are improved.

1. The name of the design product: wafer dicing machine. 2. The use of the design product: for wafer dicing process. 3. The design points of the design product: in shape. 4. The picture or photo that best shows the design points: perspective view 1.

This invention discloses a silicon-based OLED device with an inverted trapezoidal sharp-corner stress-blocking structure and its fabrication method, belonging to the field of display panel packaging technology. The device includes a CMOS driving substrate, a pixel anode, a PDL pixel definition layer, an OLED functional layer and a cathode layer, a TFE thin-film encapsulation layer, a Fill planarization optical adhesive layer, a Dam (dam) barrier, and an encapsulation cover plate, stacked sequentially. The PDL pixel definition layer has stress-blocking units with inverted trapezoidal protrusions on the outer edge of the AA area. The Fill adhesive layer fills the grooves between the protrusions, with its top surface higher than the top surface of the protrusions, forming a flat surface that supports the Dam. The TFE encapsulation layer completely covers the dicing area. This invention can efficiently block wafer dicing stress, avoid encapsulation layer cracking, eliminate the need to etch the dicing encapsulation layer, and simplify the process. It also solves the problems of Dam barrier collapse and adhesive overflow, significantly improving device mass production yield and reliability, and exhibiting strong compatibility with existing mass production processes.

The application belongs to the technical field of wafer processing, and particularly relates to a vacuum holding system of a comprehensive control wafer dicing machine. The system comprises a cutting platform and a vacuum control pipeline, and further comprises: a vacuum holding control pipeline, one end of the vacuum holding control pipeline being in communication with the atmosphere, the other end of the vacuum holding control pipeline being in communication with a wafer stage of the cutting platform, a first vacuum generator, a first electromagnetic valve and a first check valve being arranged on the vacuum holding control pipeline; an electromagnetic valve control circuit, the electromagnetic valve control circuit being used for controlling the first electromagnetic valve to be turned on when the vacuum control pipeline fails; and a check valve control circuit, the check valve control circuit being used for controlling the first check valve to be turned on when the vacuum control pipeline fails. When the vacuum control pipeline fails, the vacuum state of the wafer stage of the cutting platform is maintained through the vacuum holding control pipeline, and an alarm is realized, so that loss caused by vacuum degree drop is prevented.

The invention provides a feeding and discharging assembly of a wafer scribing machine, and relates to the technical field of semiconductor manufacturing. The wafer scribing machine feeding and discharging assembly comprises a positioning table arranged on one side of a scribing machine, a first conveying belt and a wafer box, the positioning table is fixedly installed on one side of the scribing machine, the first conveying belt is arranged on the positioning table, the wafer box is arranged on the first conveying belt, a first inclined face is arranged on the outer wall of the wafer box, and a second inclined face is arranged on the outer wall of the first inclined face. A plurality of groups of positioning structures are arranged on the first conveying belt, the positioning structures are used for clamping and positioning wafer boxes, wafer lifting mechanisms are arranged on the wafer boxes and the positioning table, and the wafer lifting mechanisms are used for sequentially lifting wafers in the wafer boxes to specified heights. The feeding and discharging assembly of the wafer scribing machine has the advantages that the feeding and discharging assembly can adapt to wafers of different sizes, physical isolation and temporary storage can be conducted on wafer boxes of different specifications and batches, and new materials can be supplemented without shutdown.

The application relates to the field of quartz wafers, in particular to a quartz wafer cutting device which comprises a base, a transfer unit is arranged on the base and used for circumferential transfer of a quartz wafer, a feeding unit is arranged on one side of the transfer unit and used for feeding of the quartz wafer, a cutting unit is arranged above the transfer unit and used for cutting of the quartz wafer, a discharging unit is arranged on the other side of the transfer unit and used for discharging of the cut quartz wafer, compared with laser device cutting, the quartz wafer cutting device can reduce the cost, compared with the existing mechanical cutting device, the quartz wafer cutting device can reduce the participation of manual work, reduce labor, and the setting of the transfer unit can realize cutting of multiple quartz wafers, and the efficiency is improved.

A device structure may be provided by: forming semiconductor devices and metal interconnect structures formed within dielectric material layers over a semiconductor substrate; forming metal pads in a topmost layer of the dielectric material layers; forming a passivation layer stack including a first dielectric diffusion barrier layer, a silicate glass layer, a second dielectric diffusion barrier layer, and a polymer layer; forming openings through the passivation layer stack over the metal pads; forming die bump structures on the metal pads; and dicing a wafer including the passivation layer stack, the dielectric material layers, and the semiconductor substrate along dicing channels into a plurality of semiconductor dies.

The utility model relates to the technical field of single crystal wafer positioning clamps, in particular to a visual positioning clamp for single crystal wafer cutting, which comprises a clamping component and an abutting component. The clamping component comprises a cylindrical rod, an inserting groove is formed in one end face of the cylindrical rod in the axis direction of the cylindrical rod, and external threads are arranged on the outer circumference of the cylindrical rod. The abutting part comprises a box body, one side of the box body is provided with a through hole, and the through hole can be in threaded connection with the external threads. According to the visual positioning clamp for cutting the single crystal wafer, the insertion groove is formed in one end face of the cylindrical rod, the single crystal wafer can be conveniently and rapidly clamped and fixed, the cylindrical rod and the box body are provided with the external threads and the threaded holes which are matched with each other, movement of the single crystal wafer and the cylindrical rod can be limited during cutting, meanwhile, the visibility of the single crystal wafer is improved, and the service life of the single crystal wafer is prolonged. The internal defects of the single crystal wafer can be observed better, and the cutting quality and efficiency are improved.

The utility model discloses a film wafer cutting device which comprises a box body, a fixing frame is fixed to the top of the box body, a left-right adjusting screw rod is rotationally connected to the interior of the fixing frame, and a left-right moving block is connected to the outer side wall of the left-right adjusting screw rod in a threaded mode. And the top of the left-right moving block is slidably connected with the upper surface of the interior of the fixing frame, a left-right adjusting motor is fixed to the right side of the fixing frame, an output shaft of the left-right adjusting motor penetrates through the fixing frame to be fixedly connected with the left-right adjusting screw rod, and a moving frame is fixed to the bottom of the left-right moving block. According to the thin film wafer cutting device, the discharging mechanism is arranged, a thin film wafer is placed in the containing table, a laser head is started to cut the thin film wafer, before cutting is completed, a rotating motor is started, the rotating motor drives the laser head and the containing table to rotate, and the cut wafer located in the containing table falls downwards, so that discharging is completed; simplicity and convenience are realized.

The utility model discloses an electroplating device for a wafer cutting blade, which relates to the technical field of wafer cutting blades and is technically characterized by comprising an electroplating box and a fixing frame fixedly arranged on the left side surface of the electroplating box, a fixing mechanism is arranged on the inner side of the fixing frame, and a lifting mechanism is arranged on the outer side of the fixing frame; the fixing mechanism is located on the outer side of the fixing mechanism, and the technical effects are that the fixing mechanism cooperates with the electric telescopic rod, the control panel, the expansion ring, the lifting ring, the sliding sleeve, the adjusting plate, the telescopic connecting rod and the like, and the electric telescopic rod drives the control panel to move and drives the lifting ring, the sliding sleeve and the adjusting plate to move; the expansion rings expand towards the front end and the rear end to be in close contact with the inner side of the wafer cutting blade, meanwhile, the stability of the expansion rings is enhanced through the telescopic connecting rods, multiple blades can be fixed at the same time through the multiple sets of fixing parts, the surfaces of the two expansion rings make contact with the inner side face of the wafer cutting blade during electroplating, and the surfaces of the wafer cutting blade can be evenly electroplated during electroplating.

This invention relates to a high-purity coolant circulation filtration and microparticle recovery device suitable for semiconductor wafer dicing. It includes a filter cylinder, a pre-filter assembly, a fine filter assembly, a drive assembly, a liquid inlet assembly, and a connecting assembly. The liquid inlet assembly is located at one end of the filter cylinder, and the other end of the filter cylinder has a through-hole for disassembling the pre-filter assembly. The pre-filter assembly is nested inside the fine filter assembly, forming an internally coarse and externally fine graded filtration structure. The pre-filter cylinder intercepts large particles, while the fine filter cylinder intercepts microparticles. A collection groove is located at the top of the pre-filter cylinder. The drive assembly drives the fine filter assembly to rotate, and a scraper brushes microparticles from the inner wall of the fine filter cylinder into the collection groove, achieving separate recovery of large and microparticles. The pre-filter assembly and the filter cylinder are detachably connected; during maintenance, only the pre-filter assembly needs to be disassembled, without affecting the fine filter assembly. This device achieves precise graded filtration and separate recovery of impurities, simplifying the maintenance process.

1. The name of the design product: wafer dicing machine. 2. The use of the design product: used for cutting chips on wafer into independent units. 3. The design points of the design product: in shape. 4. The picture or photo that best shows the design points: perspective view 1.

The invention relates to die attach film individualization prior to wafer dicing. An electronic device includes a conductive lead, a semiconductor die, a package structure enclosing the semiconductor die and a portion of the conductive lead, and a non-conductive die attach film extending between the conductive lead and the semiconductor die, wherein lateral sides of the semiconductor die extend beyond an end of the die attach film for a non-zero gap distance (G). A method of manufacturing an electronic device includes performing a first singulation process of separating a portion of a die attach film on a wafer; performing a second singulation process of separating a semiconductor die from the wafer having a portion of the die attach film; and attaching the semiconductor die to a lead frame, wherein the die attach film extends between a desired lead portion and a side of the semiconductor die.

The invention discloses a scribing method of a wafer with a back metal layer and a wafer structure. The scribing method comprises the following steps: forming a first groove in a scribing groove area on a second surface of the wafer; and forming a back metal layer on the second surface of the wafer, wherein the back metal layer fills the first groove and forms a second groove along the first groove. According to the scribing method of the wafer with the back metal layer and the wafer structure, the back metal layer is formed after the first groove is formed in the scribing groove area of the second surface of the wafer, so that on one hand, the thickness of a high-hardness material during cutting in the scribing process is reduced; and on the other hand, the second groove can reduce the negative influence of metal particles generated when the back metal layer is cut on the wafer.

This invention provides a method, apparatus, dicing device, and storage medium for compensating for the depth of annular dicing. The method includes: adjusting the orientation of a wafer sample using a calibration stage to achieve a target orientation; after the wafer sample in the target orientation is transferred to a dicing disk, controlling a dicing blade to cut the wafer sample as it rotates with the dicing disk, thereby creating an annular dicing on the wafer sample; obtaining a dicing depth compensation curve based on the dicing depth measurement results obtained from the annular dicing measurement stage; and adjusting the dicing depth of the wafer to be diced based on the dicing depth compensation curve during dicing. This invention avoids the impact of errors in the flatness of the dicing disk on the accuracy of the annular dicing depth, thus improving the accuracy of the annular dicing depth created by the dicing blade on the wafer to be diced.

The present application relates to wafer dicing technical field, provide a kind of wafer calibration mechanism and calibration method for dicing machine, dicing machine and processor, the wafer calibration mechanism includes: pedestal and rotating mechanism;Rotating mechanism includes rotating part and calibration component, calibration component includes multiple calibration units, which can be radially synchronized along the rotating part, the side of calibration unit towards the center of rotating part is provided with curved surface structure for cooperating with wafer edge, the side of calibration unit towards the center of rotating part is set to curved surface structure, the curved surface structure has certain camber to facilitate with wafer edge cooperation, so that the difference between the radius of wafer warping area and the radius of normal flat wafer is compensated by camber design of curved surface structure, so that in the process of multiple calibration units synchronous movement, the wafer is adjusted to the predetermined position of rotating part by the guidance of the curved surface structure, it is favorable to improve the accuracy of subsequent notch mouth alignment and other processing technology of wafer.

This invention discloses a wafer dicing process, belonging to the field of wafer processing. The wafer dicing process includes the following steps: First, multiple first trenches are pre-formed on the front side of the wafer; then, a first carrier disk is attached to the front side of the wafer; a first sealant is applied to the outer edge of the wafer and the first carrier disk to confine and limit the wafer; a second carrier disk is attached to the front and back sides of the etched wafer; the first sealant is removed; a second sealant is applied to the outer edge of the second carrier disk to confine and limit the wafer; simultaneously, the wafer rotates around its own axis to form a structure that is thin in the center and thick at the edges; the first carrier disk is removed, and a back-side process is performed on the wafer; and multiple second trenches corresponding one-to-one with the first trenches are formed on the back side of the wafer, wherein the first trenches and the second trenches are not interconnected.

The invention provides a wafer splitting direction control method and a photoetching mask, and belongs to the technical field of wafer splitting. The control method comprises the following steps: determining a specific crystal orientation according to the cleavage plane direction of a wafer; providing a photoetching mask with a photoresist pattern in a target direction; calculating a rotation angle of the wafer based on the specific crystal orientation and the target splitting direction; with the flat edge of the wafer as a reference, setting an angle alignment mark to form an angle scale; rotating the wafer to the calculated rotation angle by using an angle scale, executing a photoetching process, and forming photoresist lines arranged along the vertical direction of the crystal orientation on the wafer; and carrying out splitting operation to obtain a fracture surface of which the light resistance line direction is vertical to the crystal orientation. An angle scale is designed in a photoetching mask to assist a wafer in rotating. By accurately controlling the direction of the photoresist pattern relative to the crystal orientation, the photoresist lines are arranged along the vertical direction of the crystal orientation. The wafer is effectively guided to generate cracks in the specific crystal orientation, the wafer cracking process is controllable and stable, and the wafer cracking structure is more complete and neat.

The invention discloses a cutting method for an LED epitaxial wafer, and relates to the technical field of wafer cutting, and the cutting method comprises the following steps: taking long-chain copolymer amphoteric buffer resin as a component A and an amino-functionalized metal chelating trapping agent as a component B, and mixing to prepare a protection solution; coating the protection liquid on the surface of the LED epitaxial wafer to form a liquid film; baking the liquid film to enable the solvent and volatile components in the liquid film to escape, and forming a solid protection layer on the surface of the LED epitaxial wafer; cutting the LED epitaxial wafer; and the cut LED epitaxial wafer is washed, so that the solid protective layer is dissociated rapidly, and cutting chips and metal slag are carried to thoroughly fall off from the surface of the wafer. According to the method, a protection system with stress buffering and active capturing functions is constructed, mechanical shearing force generated by high-speed cutting is effectively dissipated by utilizing molecular rheological characteristics, wafer edge breakage is prevented, thorough water washing desorption is realized through a hydrophilic induced swelling disintegration mechanism, and electrode oxidation and residue are avoided.

The invention relates to silicon carbide wafer cutting equipment, relates to the technical field of wafer processing, and aims to reduce the influence of high-temperature dust on the light emitting end of laser cutting equipment. Silicon carbide wafer cutting equipment comprises a machine body and a moving seat arranged in the machine body in a sliding mode, and a cutting head used for cutting a wafer is arranged on the moving seat. A mounting seat is movably arranged on the side wall, facing the cutting head, of the moving seat, a cleaning assembly used for cleaning dust on the surface of the cutting head is arranged on the mounting seat, a turnover assembly used for driving the mounting seat to conduct turnover movement around the cutting head is arranged on the moving seat, and a collecting assembly used for collecting dust is arranged on the moving seat. The cutting device has the effect of collecting wafer dust to guarantee the working efficiency of the cutting device.

A wafer dicing method includes preparing a wafer that includes a plurality of device forming regions and a scribe lane region that separates the plurality of device forming regions, forming a plurality of semiconductor devices in the plurality of device forming regions of the wafer, respectively, forming a plurality of inner cracks in the scribe lane region of the wafer by repeatedly irradiating a multiple pulse laser beam that includes a plurality of sub-laser beams along the scribe lane region, wherein the plurality of sub-laser beams have decreasing peak powers, and separating the plurality of semiconductor devices from each other along the plurality of inner cracks.

The invention relates to a distributed wafer automatic cutting system and method, and belongs to the technical field of semiconductor chip packaging, and the system comprises a scribing machine which is used for receiving control data sent by an industrial personal computer, controlling a scribing mechanism to execute wafer scribing, and collecting sensing data of the scribing mechanism through a first data collection module; the splitting machine is used for receiving the control data issued by the industrial personal computer, controlling a chopper mechanism to perform wafer splitting, and acquiring sensing data of the chopper mechanism through a second data acquisition module; the industrial switch is used for distributed data exchange and transmission; an industrial personal computer; and the controller is used for receiving and storing the sensing data, storing formula parameters and a mapping rule base, issuing control data to the scribing machine, the splitting machine and the transmitter, and realizing automatic closed-loop wafer cutting of'perception-decision-execution '. The linkage processing technology is achieved through technology data sharing, the yield and the production efficiency are improved, the production cost is reduced, and the technology stability and efficiency are improved.

A rotary semiconductor cleavage device disclosed by the present invention is provided with a supporting back plate arranged behind a supporting base and supporting side plates located at the two sides, a wafer grabbing and rotating mechanism is installed in the middle of the supporting back plate, and a wafer splitting mechanism and a wafer scribing mechanism are installed at the left end and the right end of the supporting back plate respectively. The wafer grabbing and rotating mechanism, the wafer splitting mechanism and the wafer scribing mechanism can move along a guide rail on the supporting back plate; the left end of the supporting base is provided with a splitting disc, the right end of the supporting base is provided with a wafer adsorption disc, a wafer is adsorbed on the wafer adsorption disc, the wafer scribing mechanism moves to the position above the wafer adsorption disc along a guide rail on the supporting back plate, scratches meeting the requirements are scribed on the wafer, then the wafer and the wafer adsorption disc are grabbed together through the wafer grabbing and rotating mechanism, and the wafer is grabbed through the wafer grabbing and rotating mechanism. The wafer suction disc moves to the position over the wafer splitting disc along the guide rail, the wafer suction disc is rotated to be attached to the wafer splitting disc, finally, the wafer splitting mechanism moves to the wafer splitting disc, and the wafer on the wafer splitting disc is cleaved and fractured in a back pressure mode.

The present application relates to a kind of distributed wafer automatic cutting system and method, belong to semiconductor chip packaging technical field, including dicing machine, for receiving the control data from industrial computer, control dicing mechanism executes wafer dicing, the sensing data of the dicing mechanism is collected by first data acquisition module;Splitter, for receiving the control data from industrial computer, control cleaver mechanism executes wafer splitting, the sensing data of the cleaver mechanism is collected by second data acquisition module;Industrial switch, for distributed data exchange and transmission;Industrial computer;For receiving and storing the sensing data, store formula parameter and mapping rule base, issue control data to the dicing machine, splitter and transmitter, realize the automatic closed loop wafer cutting of " perception-decision-execution ".The present application realizes linkage processing technology by process data sharing, improves yield and production efficiency, reduces production cost, improves process stability and efficiency.

The invention relates to the technical field of wafer cutting, in particular to an integrated multi-station efficient cutting device for semiconductor packaging, which comprises a workbench, a mounting seat, a driving source, a connecting frame, a cutting piece, a first end plate, a sleeve, an outer cylinder and a second end plate. According to the integrated multi-station efficient cutting device for semiconductor packaging, when a driving disc rotates, a third sliding groove designed in an arc shape can drive a bottom shaft to slide from the edge of a mounting base to the center, then a first end plate and a second end plate are driven by a bottom plate to synchronously get close to the center, and four sets of outer cylinders are made to accurately abut against the side wall of a wafer; the outer cylinder can axially slide in the sleeve and compress the first reset spring, the size difference of the diameters of different wafers is flexibly compensated by utilizing the elastic deformation capacity of the spring, special clamps do not need to be replaced for the wafers of different specifications through the self-adaptive design, the equipment debugging time is shortened, and the flexible production capacity of a production line is improved.

The application provides a method for improving wafer cutting performance and a wafer structure. A trench is formed on a semiconductor substrate of the wafer by etching, and at least one epitaxial layer is formed on the surface of the trench by an epitaxial process, so that the opening of the trench is closed and a middle space gap structure is formed. The middle space gap structure is embedded in the semiconductor substrate, and is located in a cutting channel formed between adjacent semiconductor chips on the wafer. When the wafer is cut, the middle space gap structure arranged corresponding to the cutting gap guides the wafer to crack along the middle space gap structure. The middle space gap structure arranged around the semiconductor chip prevents the crack of the wafer from extending into the semiconductor chip, thereby improving the wafer cutting performance, reducing the cutting defects, being compatible with the process flow of the existing FSI and BSI image sensor chips, and greatly improving the cutting yield under the condition of considering the cost.

1. Name of this product design: Body of a force sensor. 2. Application of this design: This design is used for force measurement and control during wafer dicing. 3. The key design features of this product are the shape of the solid lines. 4. The image or photograph that best illustrates the design's key points: 3D rendering 1. 5. Other situations requiring explanation: This design is a partial design; the part for which protection is sought is the solid line portion in the view, and the dashed line portion is not for protection.

Provided are an MEMS device packaging method and an MEMS chip unit. The method comprises: manufacturing a substrate wafer, a glass capping wafer and a silicon wafer by means of an etching process; bonding the glass capping wafer and the silicon wafer on the basis of a second alignment mark and a third alignment mark, so as to form a cap wafer; constructing a through-hole structure and a silicon bonding ring of the cap wafer; manufacturing a metal intermediate layer on the surface of the silicon bonding ring; bonding the cap wafer and the substrate wafer by means of the metal intermediate layer on the basis of a first alignment mark and the second alignment mark, so as to form a packaging wafer having a vacuum-tight chamber; and respectively performing wafer dicing on the packaging wafer along a first scribe lane and a second scribe lane, so as to obtain an MEMS chip unit.

The application discloses an air-suspended precision wafer cutting electric spindle, wherein an air-floatation gap between an outer wall of a mandrel and an inner wall of an air inlet bearing is communicated with an external air source device. A first end of the mandrel is coaxially fixed with a motor rotor, and the motor rotor is located at an inner side of a motor stator. A plurality of iron core protruding portions on an inner peripheral wall of the motor stator are each provided with a coil electrically connected with a control end of an external machine table. The motor rotor comprises a plurality of permanent magnets fixed on an outer peripheral wall of the mandrel. A water jacket is coaxially arranged in a cylinder barrel, and a cooling water channel is arranged on an outer wall of the water jacket and close to the motor stator, and the cooling water channel is connected with an external circulating water supply device. The permanent magnets of the motor rotor are fixed on the outer wall of the mandrel in a patch type structure, and in the case of equal power output, the motor structure has smaller high-order harmonics and more stable output power. The motor stator is fixed on the inner wall of the water jacket, so that water-cooling rapid heat dissipation of the motor can be realized, and the operation precision of the motor is improved.