174 results about "Wafer dicing" patented technology

The invention relates to the technical field of semiconductor manufacturing, and discloses an edge breakage defect prediction and compensation method in a wafer cutting process, and the method comprises the steps: obtaining a wafer cutting initial scheme and historical cutting data, extracting edge breakage key parameters, defining an edge vulnerability function, and building a high-risk region space mapping model; according to the real-time cutting position, multi-dimensional data are collected through a three-level monitoring mode, the abnormal deviation state of the track is judged, and an edge breakage risk assessment model is constructed and early warning is carried out; a compensation scheme is formulated after early warning is triggered, cutting is implemented, and the effect is verified; according to the method, multi-dimensional data are fused, the risk area is dynamically delimited, self-adaptive adjustment of the cutting parameters is achieved, and the wafer cutting yield is remarkably improved.

The invention discloses a wafer cutting protection liquid composition, and belongs to the field of wet electronic chemicals. The composition comprises the following components in percentage by mass: 0.1-5% of a wetting agent, 0.1-2% of a penetrating agent, 0.1-2% of a dispersing agent, 0.1-2% of a pH regulator, 0.1-2% of a nonionic Gemini surfactant and the balance of water, wherein the sum of the mass percentages is 100%. The nonionic Gemini surfactant used in the invention has excellent wettability and permeability, can effectively reduce surface tension at low concentration, does not introduce foreign ions, is easy to rinse, has no residue, and can improve the cleaning ability to particles. The composition prepared from the cutting fluid has good cooling and lubricating effects, has no obvious foam, does not corrode metal to damage an electrode, can protect a wafer from being damaged during cutting, prevents fragments and pollution, is low in irritation and environment-friendly, and meets the environment-friendly requirement.

The utility model relates to a semiconductor wafer scribing machine, which is characterized in that a dust collection ring (13) is arranged on the outer side of a top opening of a positioning box (14), a plurality of positioning ring grooves (15) are coaxially formed in the positioning box (14), the positioning ring grooves (15) are sequentially arranged from top to bottom, the diameters of the positioning ring grooves (15) are gradually reduced, and a vacuum chuck (16) is arranged at the bottom of the positioning box (14) in a sliding manner; according to the size of a wafer, the wafer is placed in a proper positioning ring groove (15) in a positioning box (14), rapid positioning of the wafer is achieved, the device is suitable for the wafers of different sizes, then vacuum adsorption and fixing are conducted on the bottom of the wafer through a vacuum suction cup (16) capable of being adjusted in an up-down sliding mode, a laser cutter (12) conducts scribing operation on the positioned and fixed wafer, and the wafer cutting efficiency is improved. And meanwhile, scraps generated by wafer scribing are adsorbed through the dust collection ring (13), so that the vacuum adsorption force of the vacuum chuck (16) and the adsorption stability of the wafer are prevented from being influenced.

The invention relates to the technical field of wafer scribing processing, and discloses a double-station wafer scribing machine which comprises a main shaft cutting module, a working disc module, a feeding module, a discharging module and a guide plate module capable of being closed. The discharging module is used for moving from an initial position and taking out a workpiece in a material box, a sensing assembly arranged on the guide plate module is used for positioning the workpiece, when the workpiece moves to a sensing position along with the discharging module, the guide plate module is closed to clamp the workpiece to form a transfer station, and then the discharging module is reset; the feeding module is used for conveying the workpieces located on the transfer station to the working disc module and then resetting the workpieces. According to the scribing machine, through the arrangement of the feeding module, the discharging module and the openable guide plate, the scribing machine can be matched with the working disc capable of moving in a directional mode, the operations of automatic feeding, material preparation in scribing and cutting and discharging are completed, the internal space of the scribing machine is efficiently utilized, and the overall machining efficiency is improved.

Provided is a method of dicing a wafer, the method including preparing a wafer having a plurality of device formation regions and a scribe lane region defining the plurality of device formation regions, forming a plurality of semiconductor devices in the plurality of device formation regions of the wafer, irradiating a first laser beam and a second laser beam of a wavelength different from the first laser beam along the scribe lane region to form a plurality of internal cracks in the wafer, and separating the plurality of semiconductor devices along the plurality of internal cracks, wherein the first laser beam includes a plurality of pulses sequentially emitted from a laser apparatus, and the second laser beam is continuous wave light emitted from the laser apparatus.

The application relates to the technical field of wafer dicing, and provides an adsorption work disc for a dicing machine, a wafer adsorption control method and the dicing machine. The adsorption work disc comprises a disc body and a sealing support. The disc body comprises a base and an adsorption part. The adsorption part is located above the base and is connected with the base to form a gas guide channel. The adsorption part comprises a plurality of adsorption units. The adsorption units are communicated with the gas guide channel. An installation groove is arranged at the edge area of the adsorption part. The installation groove is arranged at the edge of the adsorption work disc, and the sealing support is arranged in the groove. The sealing support supports the edge of the wafer. The sealing support has certain flexibility. When the wafer is adsorbed, the edge of the wafer will not be warped due to the reverse abutting force. Meanwhile, a relatively closed space is formed between the wafer and the adsorption part of the adsorption work disc and the sealing support, so that the adsorption efficiency and adsorption effect of the adsorption units on the middle area of the wafer are improved.

1. The name of the design product: wafer dicing machine. 2. The use of the design product: for wafer dicing process. 3. The design points of the design product: in shape. 4. The picture or photo that best shows the design points: perspective view 1.

This invention discloses a silicon-based OLED device with an inverted trapezoidal sharp-corner stress-blocking structure and its fabrication method, belonging to the field of display panel packaging technology. The device includes a CMOS driving substrate, a pixel anode, a PDL pixel definition layer, an OLED functional layer and a cathode layer, a TFE thin-film encapsulation layer, a Fill planarization optical adhesive layer, a Dam (dam) barrier, and an encapsulation cover plate, stacked sequentially. The PDL pixel definition layer has stress-blocking units with inverted trapezoidal protrusions on the outer edge of the AA area. The Fill adhesive layer fills the grooves between the protrusions, with its top surface higher than the top surface of the protrusions, forming a flat surface that supports the Dam. The TFE encapsulation layer completely covers the dicing area. This invention can efficiently block wafer dicing stress, avoid encapsulation layer cracking, eliminate the need to etch the dicing encapsulation layer, and simplify the process. It also solves the problems of Dam barrier collapse and adhesive overflow, significantly improving device mass production yield and reliability, and exhibiting strong compatibility with existing mass production processes.

The application discloses a wafer dicing machine mechanical hand material clamping device and relates to the technical field of wafer dicing machines.The wafer dicing machine mechanical hand material clamping device comprises a linear driving mechanism arranged horizontally; a pair of clamping mechanisms are arranged below the linear driving mechanism; the upper portions of the two clamping mechanisms are connected with the linear driving mechanism through rotary direction adjusting mechanisms respectively; the rotary direction adjusting mechanisms can drive the clamping mechanisms to rotate horizontally; and a lifting mechanism for driving the clamping mechanisms to move up and down is arranged on the linear driving mechanism. The wafer dicing machine mechanical hand material clamping device has the advantages of reasonable structural design, convenient use, effectively improved processing efficiency of the semiconductor wafer dicing machine on material workpiece discs and high market application value.

The utility model provides a wafer splitting jig, and relates to the technical field of wafer production. The wafer splitting jig comprises a jig body and at least one cutting part, the jig body is provided with a first plane, and the first plane is used for being supported on the supporting surface; the jig body is provided with a jacking area opposite to the first plane, the jacking area is linear, and the orthographic projection, facing the first plane, of the jacking area is completely arranged in the first plane; the jig body is provided with concave areas between the jacking area and the first plane, and the concave areas are located on the two sides of the extending direction of the jacking area so that the jacking area can protrude out of the jig body; the cutting part is arranged at the first end of the jacking area, and the first end is located at the end, in the extending direction, of the jacking area and deviates from the first plane.

The invention provides a structure for improving wafer scribing reliability. The structure includes a chip region, adjacent scribe lanes, a seal ring within the chip region adjacent the scribe lanes, and a passivation layer covering these regions. The key point is that in the passivation layer, a passivation layer slot is formed between the sealing ring and the scribing channel, and a first safety distance and a second safety distance are respectively defined between the slot and the sealing ring as well as between the slot and the scribing channel. The groove of the passivation layer can release or buffer the generated mechanical stress in the subsequent scribing process and effectively prevent the mechanical stress from being destructively transmitted to the sealing ring and the internal area of the chip, so that the defects of edge breakage, cracks and the like caused by scribing are remarkably reduced, and the structural integrity and the packaging yield of the chip and the long-term reliability of a final product are improved.

The present application relates to a quantitative characterization of the bonding force between polyimide and copper-plated interface test sample and preparation method, comprising the following steps: solidifying a layer of polyimide film on a silicon wafer; preparing a copper layer on the polyimide film, and protecting the copper layer from oxidation; wafer dicing treatment, cutting into a certain size of polyimide and copper-plated interface sample; the upper surface of the polyimide and copper-plated interface sample is welded together with the bottom surface of the tensile clamp, and the integration of the test sample and the tensile clamp is completed. The present application avoids the method of preparing a copper layer on the silicon wafer, and then preparing a polyimide film on the copper layer in a specified pattern, but instead, a polyimide film is first prepared on the silicon wafer in its entirety, then a copper-plated layer is prepared on the polyimide film in a specified pattern, and a tensile clamp is welded on the copper layer. The high-strength weld reduces the risk of fracture of the non-test surface during the test process, thereby achieving the quantitative characterization of the bonding force between the polyimide and the copper-plated interface.

The application belongs to the technical field of wafer processing, and particularly relates to a vacuum holding system of a comprehensive control wafer dicing machine. The system comprises a cutting platform and a vacuum control pipeline, and further comprises: a vacuum holding control pipeline, one end of the vacuum holding control pipeline being in communication with the atmosphere, the other end of the vacuum holding control pipeline being in communication with a wafer stage of the cutting platform, a first vacuum generator, a first electromagnetic valve and a first check valve being arranged on the vacuum holding control pipeline; an electromagnetic valve control circuit, the electromagnetic valve control circuit being used for controlling the first electromagnetic valve to be turned on when the vacuum control pipeline fails; and a check valve control circuit, the check valve control circuit being used for controlling the first check valve to be turned on when the vacuum control pipeline fails. When the vacuum control pipeline fails, the vacuum state of the wafer stage of the cutting platform is maintained through the vacuum holding control pipeline, and an alarm is realized, so that loss caused by vacuum degree drop is prevented.

The invention provides a feeding and discharging assembly of a wafer scribing machine, and relates to the technical field of semiconductor manufacturing. The wafer scribing machine feeding and discharging assembly comprises a positioning table arranged on one side of a scribing machine, a first conveying belt and a wafer box, the positioning table is fixedly installed on one side of the scribing machine, the first conveying belt is arranged on the positioning table, the wafer box is arranged on the first conveying belt, a first inclined face is arranged on the outer wall of the wafer box, and a second inclined face is arranged on the outer wall of the first inclined face. A plurality of groups of positioning structures are arranged on the first conveying belt, the positioning structures are used for clamping and positioning wafer boxes, wafer lifting mechanisms are arranged on the wafer boxes and the positioning table, and the wafer lifting mechanisms are used for sequentially lifting wafers in the wafer boxes to specified heights. The feeding and discharging assembly of the wafer scribing machine has the advantages that the feeding and discharging assembly can adapt to wafers of different sizes, physical isolation and temporary storage can be conducted on wafer boxes of different specifications and batches, and new materials can be supplemented without shutdown.

The application relates to the field of quartz wafers, in particular to a quartz wafer cutting device which comprises a base, a transfer unit is arranged on the base and used for circumferential transfer of a quartz wafer, a feeding unit is arranged on one side of the transfer unit and used for feeding of the quartz wafer, a cutting unit is arranged above the transfer unit and used for cutting of the quartz wafer, a discharging unit is arranged on the other side of the transfer unit and used for discharging of the cut quartz wafer, compared with laser device cutting, the quartz wafer cutting device can reduce the cost, compared with the existing mechanical cutting device, the quartz wafer cutting device can reduce the participation of manual work, reduce labor, and the setting of the transfer unit can realize cutting of multiple quartz wafers, and the efficiency is improved.

A device of inspecting defects of a wafer diced or aligned, the wafer including, after being diced or aligned, a silicon wafer layer and a blue film affixed to the bottom of the silicon wafer layer, the device including: an immersion liquid detector having a casing, the casing having a transparent lid, allowing a liquid to flow through and fill between the blue film and the transparent lid; a lens assembly disposed in the casing and below the transparent lid; an optical lens assembly disposed in the casing and below the lens assembly; a light source for generating visible light and infrared light; and a visible-light camera and an infrared camera, both adapted to perform imaging on the bottom of the silicon wafer layer.

A device structure may be provided by: forming semiconductor devices and metal interconnect structures formed within dielectric material layers over a semiconductor substrate; forming metal pads in a topmost layer of the dielectric material layers; forming a passivation layer stack including a first dielectric diffusion barrier layer, a silicate glass layer, a second dielectric diffusion barrier layer, and a polymer layer; forming openings through the passivation layer stack over the metal pads; forming die bump structures on the metal pads; and dicing a wafer including the passivation layer stack, the dielectric material layers, and the semiconductor substrate along dicing channels into a plurality of semiconductor dies.

The present invention provides a method for preparing a linear array CZT detector, comprising: cutting a crystal into rectangular wafers along the <111> crystal orientation, performing surface treatment to remove surface damage, forming electrode patterns on the {111}Te surface of the wafer, providing scribe lines between the electrode patterns, and performing photolithography followed by gold plating; stripping the gold film on the photoresist, applying photoresist on the {111}Te and {111}Cd surfaces, cutting the wafer into multiple wafers along the scribe lines, and removing the photoresist; placing the multiple wafers in the grooves of a PVD tray fixture, and gold plating the {111}Cd surfaces; applying positive resist to the {111}Te and {111}Cd surfaces of the gold-plated wafers for protection, polishing the four side surfaces, and finally removing the photoresist to complete the preparation. This method solves the problems of edge chipping and missing electrode patterns caused by uneven resist coating, and can prepare multiple linear array detectors at a time, with high production efficiency, low processing costs, simple operation, and strong controllability.

The utility model relates to the technical field of single crystal wafer positioning clamps, in particular to a visual positioning clamp for single crystal wafer cutting, which comprises a clamping component and an abutting component. The clamping component comprises a cylindrical rod, an inserting groove is formed in one end face of the cylindrical rod in the axis direction of the cylindrical rod, and external threads are arranged on the outer circumference of the cylindrical rod. The abutting part comprises a box body, one side of the box body is provided with a through hole, and the through hole can be in threaded connection with the external threads. According to the visual positioning clamp for cutting the single crystal wafer, the insertion groove is formed in one end face of the cylindrical rod, the single crystal wafer can be conveniently and rapidly clamped and fixed, the cylindrical rod and the box body are provided with the external threads and the threaded holes which are matched with each other, movement of the single crystal wafer and the cylindrical rod can be limited during cutting, meanwhile, the visibility of the single crystal wafer is improved, and the service life of the single crystal wafer is prolonged. The internal defects of the single crystal wafer can be observed better, and the cutting quality and efficiency are improved.

The utility model discloses a film wafer cutting device which comprises a box body, a fixing frame is fixed to the top of the box body, a left-right adjusting screw rod is rotationally connected to the interior of the fixing frame, and a left-right moving block is connected to the outer side wall of the left-right adjusting screw rod in a threaded mode. And the top of the left-right moving block is slidably connected with the upper surface of the interior of the fixing frame, a left-right adjusting motor is fixed to the right side of the fixing frame, an output shaft of the left-right adjusting motor penetrates through the fixing frame to be fixedly connected with the left-right adjusting screw rod, and a moving frame is fixed to the bottom of the left-right moving block. According to the thin film wafer cutting device, the discharging mechanism is arranged, a thin film wafer is placed in the containing table, a laser head is started to cut the thin film wafer, before cutting is completed, a rotating motor is started, the rotating motor drives the laser head and the containing table to rotate, and the cut wafer located in the containing table falls downwards, so that discharging is completed; simplicity and convenience are realized.

The utility model discloses an electroplating device for a wafer cutting blade, which relates to the technical field of wafer cutting blades and is technically characterized by comprising an electroplating box and a fixing frame fixedly arranged on the left side surface of the electroplating box, a fixing mechanism is arranged on the inner side of the fixing frame, and a lifting mechanism is arranged on the outer side of the fixing frame; the fixing mechanism is located on the outer side of the fixing mechanism, and the technical effects are that the fixing mechanism cooperates with the electric telescopic rod, the control panel, the expansion ring, the lifting ring, the sliding sleeve, the adjusting plate, the telescopic connecting rod and the like, and the electric telescopic rod drives the control panel to move and drives the lifting ring, the sliding sleeve and the adjusting plate to move; the expansion rings expand towards the front end and the rear end to be in close contact with the inner side of the wafer cutting blade, meanwhile, the stability of the expansion rings is enhanced through the telescopic connecting rods, multiple blades can be fixed at the same time through the multiple sets of fixing parts, the surfaces of the two expansion rings make contact with the inner side face of the wafer cutting blade during electroplating, and the surfaces of the wafer cutting blade can be evenly electroplated during electroplating.

The utility model relates to the technical field of semiconductor manufacturing, and discloses an improved semi-automatic wafer scribing and cutting machine which comprises a shell, a supporting plate is fixedly connected to the inner wall of the shell, a motor is fixedly connected to the front side of the supporting plate, a rotating rod is fixedly connected to the driving end of the motor, and the rotating rod is fixedly connected to the driving end of the motor. The rear side of the rotating rod is fixedly connected with a rotating disc, the rear side of the rotating disc is fixedly connected with a first rotating shaft, the exterior of the first rotating shaft is slidably connected with a first rotating plate, the top of the first rotating plate is fixedly connected with a first moving plate, and the rear side of the supporting plate is fixedly connected with a fixing rod. A second rotating plate is rotationally connected to the outer portion of the fixing rod. The motor drives the rotating rod to rotate, the rotating disc is made to rotate, the first rotating shaft drives the first rotating plate to rotate, the moving plate drives the second moving plate to move, the workbench is made to move, and left-right movement of the workbench is achieved.

A method includes the step of thinning a semiconductor wafer by a horizontal stealth lasing process, and semiconductor wafers, dies and devices formed thereby. After formation of an integrated circuit layer on a semiconductor wafer, the wafer may be thinned by supporting an active surface of the wafer on a rotating chuck, and focusing a horizontally-oriented laser in multiple cycles at different radii within the rotating wafer. Upon completion of the multiple cycles, a portion of the wafer substrate may be removed, leaving the wafer thinned to its final thickness. Thereafter, a vertical stealth lasing process may be performed to cut individual semicondcutor dies from the thinned wafer.

This invention relates to a high-purity coolant circulation filtration and microparticle recovery device suitable for semiconductor wafer dicing. It includes a filter cylinder, a pre-filter assembly, a fine filter assembly, a drive assembly, a liquid inlet assembly, and a connecting assembly. The liquid inlet assembly is located at one end of the filter cylinder, and the other end of the filter cylinder has a through-hole for disassembling the pre-filter assembly. The pre-filter assembly is nested inside the fine filter assembly, forming an internally coarse and externally fine graded filtration structure. The pre-filter cylinder intercepts large particles, while the fine filter cylinder intercepts microparticles. A collection groove is located at the top of the pre-filter cylinder. The drive assembly drives the fine filter assembly to rotate, and a scraper brushes microparticles from the inner wall of the fine filter cylinder into the collection groove, achieving separate recovery of large and microparticles. The pre-filter assembly and the filter cylinder are detachably connected; during maintenance, only the pre-filter assembly needs to be disassembled, without affecting the fine filter assembly. This device achieves precise graded filtration and separate recovery of impurities, simplifying the maintenance process.

1. The name of the design product: wafer dicing machine. 2. The use of the design product: used for cutting chips on wafer into independent units. 3. The design points of the design product: in shape. 4. The picture or photo that best shows the design points: perspective view 1.

The invention relates to die attach film individualization prior to wafer dicing. An electronic device includes a conductive lead, a semiconductor die, a package structure enclosing the semiconductor die and a portion of the conductive lead, and a non-conductive die attach film extending between the conductive lead and the semiconductor die, wherein lateral sides of the semiconductor die extend beyond an end of the die attach film for a non-zero gap distance (G). A method of manufacturing an electronic device includes performing a first singulation process of separating a portion of a die attach film on a wafer; performing a second singulation process of separating a semiconductor die from the wafer having a portion of the die attach film; and attaching the semiconductor die to a lead frame, wherein the die attach film extends between a desired lead portion and a side of the semiconductor die.

The invention discloses a scribing method of a wafer with a back metal layer and a wafer structure. The scribing method comprises the following steps: forming a first groove in a scribing groove area on a second surface of the wafer; and forming a back metal layer on the second surface of the wafer, wherein the back metal layer fills the first groove and forms a second groove along the first groove. According to the scribing method of the wafer with the back metal layer and the wafer structure, the back metal layer is formed after the first groove is formed in the scribing groove area of the second surface of the wafer, so that on one hand, the thickness of a high-hardness material during cutting in the scribing process is reduced; and on the other hand, the second groove can reduce the negative influence of metal particles generated when the back metal layer is cut on the wafer.

This invention provides a method, apparatus, dicing device, and storage medium for compensating for the depth of annular dicing. The method includes: adjusting the orientation of a wafer sample using a calibration stage to achieve a target orientation; after the wafer sample in the target orientation is transferred to a dicing disk, controlling a dicing blade to cut the wafer sample as it rotates with the dicing disk, thereby creating an annular dicing on the wafer sample; obtaining a dicing depth compensation curve based on the dicing depth measurement results obtained from the annular dicing measurement stage; and adjusting the dicing depth of the wafer to be diced based on the dicing depth compensation curve during dicing. This invention avoids the impact of errors in the flatness of the dicing disk on the accuracy of the annular dicing depth, thus improving the accuracy of the annular dicing depth created by the dicing blade on the wafer to be diced.

The present application relates to wafer dicing technical field, provide a kind of wafer calibration mechanism and calibration method for dicing machine, dicing machine and processor, the wafer calibration mechanism includes: pedestal and rotating mechanism;Rotating mechanism includes rotating part and calibration component, calibration component includes multiple calibration units, which can be radially synchronized along the rotating part, the side of calibration unit towards the center of rotating part is provided with curved surface structure for cooperating with wafer edge, the side of calibration unit towards the center of rotating part is set to curved surface structure, the curved surface structure has certain camber to facilitate with wafer edge cooperation, so that the difference between the radius of wafer warping area and the radius of normal flat wafer is compensated by camber design of curved surface structure, so that in the process of multiple calibration units synchronous movement, the wafer is adjusted to the predetermined position of rotating part by the guidance of the curved surface structure, it is favorable to improve the accuracy of subsequent notch mouth alignment and other processing technology of wafer.

This invention discloses a wafer dicing process, belonging to the field of wafer processing. The wafer dicing process includes the following steps: First, multiple first trenches are pre-formed on the front side of the wafer; then, a first carrier disk is attached to the front side of the wafer; a first sealant is applied to the outer edge of the wafer and the first carrier disk to confine and limit the wafer; a second carrier disk is attached to the front and back sides of the etched wafer; the first sealant is removed; a second sealant is applied to the outer edge of the second carrier disk to confine and limit the wafer; simultaneously, the wafer rotates around its own axis to form a structure that is thin in the center and thick at the edges; the first carrier disk is removed, and a back-side process is performed on the wafer; and multiple second trenches corresponding one-to-one with the first trenches are formed on the back side of the wafer, wherein the first trenches and the second trenches are not interconnected.