2387 results about "Thin metal" patented technology

A vertical-cavity surface-emitting laser (VCSEL) comprising a low-loss thin metal contact and current spreading layer within the optical cavity that provides for improved ohmic contact and lateral current distribution, a substrate including a plano-concave optical cavity, a (Ga,In,Al)N multiple quantum well (MQW) active region contained within the optical cavity that generates light when injected by an electrical current, and an integrated micromirror fabricated onto the substrate that provides for optical mode control of the light generated by the active region. A relatively simple process is used to fabricate the VCSEL.

An amorphous electrically conductive oxide such as In-Zn-O-containing amorphous oxide or amorphous ITO is used alone, or a laminate having a two- or three-layer structure constituted of the amorphous electrically conductive oxide and at least a thin metal layer is used, to form a transparent electrode whose side surface has a tapered form and whose top layer is formed of a layer of the above amorphous electrically conductive oxide, an organic single-layer portion or an organic multi-layer portion containing at least an organic light-emitting material is formed on the above transparent electrode, and further, an opposing electrode is formed on the above organic single-layer portion or the above organic multi-layer portion, whereby an organic EL device is obtained. A flattening layer is optionally provided so as to abut on the side surface of the transparent electrode for moderating a height-level difference between the above transparent electrode and the surface of the above substrate. Further, the above organic EL device is used to form an organic EL display panel.

The present invention provides a surface preparation process using adsorbed halogen. The halogen is applied in a gas phase with UV light. The adsorbed halogen is subsequently modified in another gas phase reaction. The halogen may be reacted with water to form a hydroxyl-bearing Si—O monolayer that forms a layer for subsequent metal deposition. In one aspect the halogen layer is reacted with an alkyl or alkoxy of the formula R-OH to form a passivation layer. By replacing hydrogen atom termination with alkoxy (e.g.methoxy termination, —OCH₃). The selective deposition process can be used for passivating and depositing thin metal films on material surfaces composed of any combination of the group consisting of semiconductors, conductors, insulators, and the like.

The invention is to a dual beam process for providing an ion-conducting membrane with a thin metal or metal-oxide film. The process includes the cleaning of a membrane surface with a low energy electron beam followed by the deposition of the metal or metal-oxide film by a high energy electron beam of ions.

A method and apparatus for plating a metal layer onto a substrate is provided. The plating apparatus includes two or more segments of an anode and an auxiliary electrode. The plating method includes a first stage of plating a thin metal seed uniformly in the center of the substrate and near the edges of the substrate before metal gap filling and bulk metal plating are performed. The thin metal seed is plated on the substrate surface by applying a current pulse provided by a first power supply and a second power supply which are in electrical communication in reverse polarity with one segment of the anode and the auxiliary electrode. Thereafter, gap filling of features is performed by applying a second current pulse where current is provided to all segments of the anode.

High-surface-area carbon nanostructures coated with a smooth and conformal submonolayer-to-multilayer thin metal films and their method of manufacture are described. The preferred manufacturing process involves the initial oxidation of the carbon nanostructures followed by immersion in a solution with the desired pH to create negative surface dipoles. The nanostructures are subsequently immersed in an alkaline solution containing non-noble metal ions which adsorb at surface reaction sites. The metal ions are then reduced via chemical or electrical means and the nanostructures are exposed to a solution containing a salt of one or more noble metals which replace adsorbed non-noble surface metal atoms by galvanic displacement. Subsequent film growth may be performed via the initial quasi-underpotential deposition of a non-noble metal followed by immersion in a solution comprising a more noble metal. The resulting coated nanostructures may be used, for example, as high-performance electrodes in supercapacitors, batteries, or other electric storage devices.

To provide a thin metal base circuit board which can be not only installed on a flat portion but also closely attached to a side or bottom surface of a case or to a stepped or curved portion and which is excellent in heat dissipation performance, electrical insulating performance and flexibility; a process for its production; and a hybrid integrated circuit, an LED module and a bright, ultra-long-life LED light source employing it.

A metal base circuit board having insulating layers and conductive circuits or metal foils alternately laminated, characterized in that the thickness of each conductive circuit or metal foil is from 5 μm to 450 μm, each insulating layer is made of a cured product of a resin composition comprising an inorganic filler and a thermosetting resin, and the thickness of each insulating layer is from 9 μm to 300 μm; and a hybrid circuit board employing it. The metal base circuit board wherein a coverlay is provided, and a layer having a magnetic loss or a layer having a dielectric loss is laminated on the surface of the coverlay. A LED light source unit having at least one light-emitting diode (LED) mounted on the conductive circuit.

A producing method of a suspension board with circuit that can permit a terminal portion to be formed by electrolysis plating without exposing a conductor layer to outside and also can reduce the number of processes, and the suspension board with circuit produced by the same producing method. After an insulating base layer 3 is formed on a suspension board 2 in a specific pattern in which a second opening 12 is formed, a thin metal film 13 is formed on an entire surface of the insulating base layer 3 and on a surface of the suspension board 2 including the second opening 12 exposed from the insulating base layer 3.Then, a conductor layer 4 is formed in the form of a wired circuit pattern on the thin metal film 13. Thereafter, the insulating cover layer 10 is formed in such a manner that a pad opening 11 is formed in the insulating cover layer 10 and then a pad portion 16 is formed in the pad opening 11 using the suspension board 2 as a lead portion of the electrolysis plating. Thereafter, a first opening 25 larger than the second opening 12 is formed in the suspension board 2 at a portion thereof corresponding to the second opening 12.

The invention discloses a simple and convenient thin metal sheet drilling machine device. The device comprises a device body. An operating groove is formed in the end face of the right side of the device body. A switching cavity is formed in the portion, on the left side of the operating groove, of the device body. A first inner spline shaft and a second inner spline shaft are arranged on the inner walls of the upper side and the lower side of the switching cavity correspondingly. A first sliding groove is formed in the inner wall of the left side of the switching cavity. A sediment groove is formed in the inner bottom wall of the first sliding groove. A first guide rod is arranged between the inner bottom wall of the sediment groove and the inner top wall of the first sliding groove. A first sliding block extending rightwards is slidably connected to the first guide rod in a matched mode. A first spring is arranged on the outer surface of the first guide rod located at the bottom of the first sliding block in a surrounding mode. A right extending section of the first sliding block extends into the switching cavity and abuts against the inner wall of the right side of the switching cavity in a sliding fit mode. A motor is arranged in the first sliding block in the switching cavity. Driving shafts are arranged at the ends of the upper side and the lower side of the motor. A transmission cavity is formed in the portion, above the switching cavity, in the device body. The device is simple in structure, convenient to operate, low in manufacturing and maintaining cost, high in drilling speed and stability and good in drilling quality.

An SPR (surface plasmon resonance) sensor cell comprising: a light-transparent core; a clad covering the core and having a through hole at a predetermined position to communicate with the core; and a predetermined thin metal film formed on an exposed surface of the core corresponding to the through hole.

This invention relates to a front electrode or contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front electrode of the photovoltaic device includes a highly conductive metal film and a thin high work-function buffer layer. The high-work function buffer layer is located between the metal film and the uppermost semiconductor layer so as to provide for substantial work-function matching between the metal film and the high work-function uppermost semiconductor layer so as to reduce a potential barrier for holes extracted from the device by the front electrode/contact. Optionally, a layer such as a transparent conductive oxide (TCO) or a dielectric may be provided between a front glass substrate and the metal film.

An electroconductive sheet and a touch panel having a first electroconductive section and a second electroconductive section, the second electroconductive section being disposed on the display-panel side. The first electroconductive section has a plurality of first electroconductive patterns arranged in the x-direction, a plurality of first large grids being respectively connected to the first electroconductive patterns. The second electroconductive section has a plurality of second electroconductive patterns arranged in the y-direction, a plurality of second large grids being respectively connected to the second electroconductive patterns. The area occupied by thin metal wires in the second electroconductive patterns is larger than the area occupied by thin metal wires in the first electroconductive patterns. The area occupied by thin metal wires in the second large grids is larger than the area occupied by thin metal wires in the first large grids.

The present invention relates to a method of and an apparatus for forming a thin metal film of copper, silver, or the like on a surface of a semiconductor or another substrate. A method of forming a thin metal film, comprises preparing a dispersed liquid having a metal-containing organic compound dispersed in a predetermined solvent, coating the dispersed liquid on a surface of a substrate and evaporating the solvent to form a coating layer, and applying an energy beam to the coating layer to decompose away an organic substance contained in the coating layer in an area irradiated with the energy beam and bond metal contained in the coating layer. According to the present invention, it is possible to form a thin metal film of good quality efficiently and stably. The thin metal film used as metal interconnects in highly integrated semiconductor circuits contributes to the progress of a process of fabricating semiconductor devices.

A strain enhanced semiconductor device and methods for its fabrication are provided. One method comprises embedding a strain inducing semiconductor material in the source and drain regions of the device to induce a strain in the device channel. Thin metal silicide contacts are formed to the source and drain regions so as not to relieve the induced strain. A layer of conductive material is selectively deposited in contact with the thin metal silicide contacts, and metallized contacts are formed to the conductive material.

A novel building construction is described for exterior building walls. The construction comprises an interior frame formed of a plurality of laterally spaced studs or beams, a layer of rigid insulation adjacent to the exterior side of this steel frame, exterior building cladding adjacent the exterior side of the rigid insulation and a plurality of low conductivity connectors, e.g. insulating plastic connectors or thin metal strips having an insulating plastic foam coating, extending through the layer of rigid insulation and connecting together the exterior cladding and the interior steel studs or beams. Vertical channels are formed adjacent both the inside and outside faces of the insulation layer to remove moisture. This provides the required structural strength with a minimum of thermal conductivity from the warm side to the cold side of the building envelope, while providing exterior drain channels and interior moisture removing channels.

A manufacturing method of a semiconductor substrate provided with a through hole electrode is proposed. In accordance with the methods, it is possible to effectively form a through hole electrode in a semiconductor substrate in which a device and a wiring pattern have been already fabricated. This manufacturing method includes the steps of forming a first silicon oxide film 12 on a principal surface of the semiconductor substrate 11, forming a small hole 13 through the semiconductor substrate 11 from the opposite the step to reach to the first silicon oxide film 12, covering the inside of the small hole 13 with the second silicon oxide film 14, forming a first thin metal film 15 and a second thin metal film 16 on the first silicon oxide film 12, partially removing the first silicon oxide film 12 corresponding to the end of the small hole 13, and filling the small hole 13 with the conductive material to form a through hole electrode 17.

The invention relates to a fiber-metallaminate comprising fiber-reinforced composite layers and thin metal sheets, wherein the total metal volume fraction of the laminate is between 0 vol. % and 47 vol. %. The fiber-metal laminate according to the invention shows an unprecedented combination of toughness and tensile strength. The laminate is advantageously used in constructing impact resistant objects, such as explosion resistant aircraft luggage containers and wing leading edges.

Embodiments of the invention are described that use a thin metallic hard mask, which can be a bi-layer film, to increase the incident IBE angle for MTJ sidewall cleaning without losing the process margin for the subsequent interconnection process. The patterned metallic hard mask pads also serve as the top electrode for the MTJ cells. Using a thin metallic hard mask is possible when the hard mask material acts as a CMP stopper without substantial loss of thickness. In the first embodiment, the single layer hard mask is preferably ruthenium. In the second embodiment, the lower layer of the bi-layer hard mask is preferably ruthenium. The wafer is preferably rotated during the IBE process for uniform etching. A capping layer under the hard mask is preferably used as the etch stopper during hard mask etch process in order not to damage or etch through the upper magnetic layer.

Metal nanocrystal memories are fabricated to include higher density states, stronger coupling with the channel, and better size scalability, than has been available with semiconductor nanocrystal devices. A self-assembled nanocrystal formation process by rapid thermal annealing of ultra thin metal film deposited on top of gate oxide is integrated with NMOSFET to fabricate such devices. Devices with Au, Ag, and Pt nanocrystals working in the F-N tunneling regime, with hot-carrier injection as the programming mechanism, demonstrate retention times up to 10⁶s, and provide 2-bit-per-cell storage capability.