399 results about "Vertical-cavity surface-emitting laser" patented technology

The invention relates to a light spot uniformity optimization method and system for a high-precision VCSEL device, and the method comprises the following steps: carrying out the light field collection of a light-emitting surface of the VCSEL device, obtaining the intensity distribution of original light spots, analyzing the non-uniformity of each light-emitting unit, and extracting the non-uniformity characteristics of the light spots. And carrying out deviation cause analysis based on the characteristics, and identifying device structure deviation parameters. According to the method, an etching process is optimized, a corrected oxidized aperture configuration scheme is obtained, near-field light field simulation is carried out by adopting a finite difference time domain method, and optimized light field distribution is verified and predicted. And finally, adaptive compensation design is carried out on the Bragg reflector structure based on a prediction result, light field regulation and control are realized, target light spot uniformity distribution is finally obtained, and the problem that systematic analysis and feedback control on non-uniformity causes of a light emitting unit layer in a device are lacked in the prior art is solved. And local bright spots or dark areas are caused.

The invention provides a temperature control system and method, electronic equipment and a storage medium, and relates to the technical field of semiconductor laser temperature control. The temperature control system is used for the vertical-cavity surface-emitting laser, and comprises a temperature measurement assembly which is used for measuring the real-time temperature of the vertical-cavity surface-emitting laser and providing a feedback signal; the digital PID algorithm assembly is connected with the temperature measuring assembly and is used for determining a control signal according to the feedback signal and a set temperature; and the power driving assembly is connected with the digital PID algorithm assembly and is used for providing driving current according to the control signal so as to adjust the temperature of the vertical cavity surface emitting laser. According to the invention, a four-wire system wiring method is adopted to eliminate lead resistance errors, and a high-precision element is matched, so that the temperature detection precision reaches 2mK, and the accuracy is remarkably improved.

The invention provides a well drilling anti-interference communication system based on a VCSEL (Vertical Cavity Surface Emitting Laser), the VCSEL and a manufacturing method thereof, and the manufacturing method comprises the following steps: calculating the light field intensity distribution of a high-order transverse mode through an intrinsic mode expansion method and a Laguerre-Gaussian model based on the epitaxial structure parameters of a laser; determining a target area which begins to perform downward annular etching on the surface of the p-DBR layer, wherein the target area coincides with a light field intensity peak area of the high-order transverse mode; performing annular etching in the target area to form an annular groove, and etching at least seven pairs of p-DBR layers inwards in the groove; the communication system comprises a signal transmitting end arranged on the derrick side, and the signal transmitting end is provided with the vertical cavity surface emitting laser; the p-DBR region of the vertical cavity surface emitting laser is provided with an annular etching structure; the graded-index fluorinated plastic optical fiber is used as a transmission medium and is connected with the derrick side and the logging room side; and the optical signal receiving end is arranged at the logging room side and is used for receiving and converting the optical signal into an electric signal.

The invention relates to a Spin Exchange Relaxation-Free (SERF)-based magnetometer system (100) for detecting ultra- weak magnetic fields, particularly suited for bio¬ sensing applications such as MEG, MCG, and MRI. The system operates at room temperature and includes a VCSEL (101) emitting dual beams tuned to Rubidium-87 transitions, a microfabricated vapor cell (102) with LIAD-based heating (103), and an optical assembly (104) for polarization control. A detection unit (105) converts Faraday rotation into electrical signals, enhanced by lock-in amplification. Magnetic shielding (106), thermal management (107), and relaxation mitigation maintain SERF conditions. A calibration subsystem (109) and embedded machine learning module (110) optimize sensitivity in real time. The compact, cryogen-free architecture enables portable and wearable applications. The invention achieves femtotesla-level sensitivity while overcoming limitations of conventional SQUID-based systems, making it suitable for clinical and field deployments.

The invention relates to the technical field of semiconductor photoelectrons, and discloses a vertical-cavity surface-emitting laser with an inverted structure and a preparation method of the vertical-cavity surface-emitting laser. The vertical cavity surface emitting laser with the inverted structure comprises a heterogeneous substrate, wherein a heat dissipation functional layer, a metal adhesion layer and a metal bonding layer are arranged on the surface of the heterogeneous substrate from bottom to top; the epitaxial structure comprises a p-type electrode, an ITO current expansion layer, a SiO2 current limiting layer, a first dielectric DBR layer, a p-type GaN layer, an electron blocking layer, a quantum well active region, an n-type GaN layer, a second dielectric DBR layer and an n-type electrode from bottom to top; and the p-type electrode is positioned at the bottom of the epitaxial structure and is bonded with the metal bonding layer to form an inverted structure. According to the vertical cavity surface emitting laser with the inverted structure provided by the invention, the heat dissipation function layer and the inverted structure design effectively improve the heat dissipation capability and the current uniformity of the device, and the service life, the performance stability and the reliability of the device are remarkably improved.

The invention relates to the field of semiconductor lasers, and discloses a vertical cavity surface emitting laser based on a composite metal substrate and photonic crystals, which comprises a CIC composite metal substrate, a GaAs buffer layer, a lower n-type DBR, an n-type contact layer, a multi-junction cascade active region, a p-type contact layer and an upper p-type DBR which are sequentially arranged from bottom to top, a plurality of two-dimensional photonic crystals are etched in the light emitting direction of the upper layer p-type DBR; the thermal stability and reliability of the device under a high-power continuous working condition are effectively improved, stable single-mode output is realized, light field limitation is enhanced, light beam quality is improved, array and on-chip integration are facilitated, the problem of low efficiency of a 650nm red light laser in the aspect of single-mode output of a base VCSEL is effectively solved, and the device has a wide application prospect. The method has a good application prospect and a wide application range.

The invention relates to the technical field of lasers, in particular to a vertical-cavity surface-emitting laser and a preparation method thereof, and the vertical-cavity surface-emitting laser comprises a substrate layer, an N-type DBR structure, a first spacing layer, an active layer, a second spacing layer and a P-type DBR structure which are stacked in sequence; wherein the P-type DBR structure is formed by alternately arranging a high-refractive-index P-type semiconductor layer and a low-refractive-index P-type semiconductor layer for a plurality of cycles, and the low-refractive-index P-type semiconductor layer is a P-type semiconductor layer containing an Al component; a low-refractive-index P-type semiconductor layer adjacent to the second spacing layer in the P-type DBR structure is used as a first oxidation limiting layer, and the molar fraction of Al component in the first oxidation limiting layer before oxidation is greater than 0.98. According to the invention, the single transverse mode output characteristic of the vertical cavity surface emitting laser under high power can be improved at least.

The utility model relates to the technical field of optical devices, in particular to a multimode short-distance optical device, which comprises a circuit board, a light emitting element, a light receiving element, a cushion block, a thermoelectric refrigerating unit and an optical lens. The light emitting element and the light receiving element are both arranged on the cold face of the thermoelectric refrigerating unit, the light emitting element is a vertical cavity surface emitting laser, and the optical lens is arranged on the emergent light path of the light emitting element and the incident light path of the light receiving element. And the reflector is used for reflecting and focusing the emitted light of the light emitting element into the multimode optical fiber and reflecting and focusing the incident light of the multimode optical fiber into the light receiving element. According to the utility model, a flexible assembly form is provided, the temperature of the heating element can be effectively controlled, and the problems of low efficiency and low precision in the aging process are solved; in addition, by arranging the light paths on the same stable structure, stable support is provided for the light paths, and the stability of the light paths is improved.

An optical signal generation system for multi-level optical signal generation using binary keying comprises an array of light sources, a control circuit, and an optical coupling mechanism. The system may be operable to configure, using the control circuit, each of the light sources in the array of light sources in a HIGH or LOW state base on a received input signal to generate a plurality of optical output signals. The plurality of optical output signals may be communicated to the optical coupling mechanism and combined into a single optical signal thereby generating a multi-level output signal representative of the received input signal. The multi-level output signal may comprise a Pulse Amplitude Modulated (PAM) equivalent signal. The array of light sources may comprise vertical cavity surface emitting lasers (VCSELs), edge-emitting lasers, or light emitting diodes (LEDs).

The invention provides a vertical cavity surface emitting laser and an epitaxial growth method thereof, and belongs to the technical field of semiconductors. The vertical cavity surface emitting laser comprises a substrate, an N-DBR, an active region growth layer, an oxidation limiting layer, a tunnel junction, a P-DBR and a surface ohmic contact layer which are stacked in sequence. The tunnel junction comprises a p + + layer, a first diffusion barrier layer, an n + + layer and a second diffusion barrier layer which are stacked in sequence. The p + + layer and the n + + layer are obtained through pulse doping growth, and P-DBR growth is carried out after stepped heating is carried out on the tunnel junction. The invention provides a comprehensive process based on pulse doping, an in-situ protection layer and stepped heating control, pulse doping is adopted when the n + + / p + + layer of the tunnel junction grows, the first diffusion barrier layer, the second diffusion barrier layer and the stepped heating process in subsequent growth are combined, and doping diffusion is remarkably inhibited while high conductivity of the tunnel junction is maintained.

The invention relates to the technical field of semiconductor lasers, in particular to a VCSEL chip manufacturing method and a laser. The preparation method comprises the following steps: growing on a substrate by adopting an epitaxial technology to obtain a VCSEL (Vertical Cavity Surface Emitting Laser) substrate; growing on the top of the VCSEL substrate by adopting a growth process to obtain a surface lens, wherein the refractive index of the surface lens gradually changes upwards from the VCSEL substrate; growing an h-BN film on the top of the surface lens to obtain a VCSEL (Vertical Cavity Surface Emitting Laser) with the lens; the VCSEL chip is oxidized through a wet oxidation method, an oxidation layer is obtained on the outer surface of the surface lens, so that the surface lens has a light beam focusing effect, and the VCSEL chip is obtained. According to the VCSEL chip prepared by the embodiment of the invention, the surface lens with the step structure and the h-BN film which have the focusing function are effectively integrated with the VCSEL, so that the stability of the whole device of the VCSEL chip is ensured.

An extended vertical cavity surface emitting laser (VCSEL) includes: a laterally epitaxially overgrown semiconductor section comprised of a group III nitride active region located between a hole injection group III nitride layer and an electron injection group III nitride layer; and the nano-porous group III nitride layer is positioned on one side of the electron injection group III nitride layer.

A vertical cavity surface emitting laser includes an oxide substrate having a first face and a second face at an opposite side from the first face; a semiconductor section disposed on the first face; a dielectric filter layer disposed between the semiconductor section and the first face and having a reflective spectrum configured to provide an optical window; a first DBR mirror; and a second DBR mirror disposed at a curved surface of the second face. The first DBR mirror, the semiconductor section, the dielectric filter layer, the oxide substrate, and the second DBR mirror are arranged in a first axial direction to form an extended cavity. The semiconductor section is disposed between the dielectric filter layer and the first DBR mirror, and includes a p-type III nitride region, an n-type III nitride region, and a III nitride active region between the p-type and n-type III nitride regions.

In some implementations, an optical device may comprise a base layer and an antireflective diffractive optical element (DOE) comprising an array of meta-atom unit cells on the base layer. In some implementations, the meta-atom unit cells may each comprise a first set of layers formed from one or more high index dielectric materials, wherein the first set of layers includes a meta-atom layer, and a second set of layers formed from one or more low index dielectric materials. In some implementations, the first set of layers and the second set of layers may be arranged in an identical sequence in each of the meta-atom unit cells. In some implementations, the antireflective DOE may be integrated with a vertical-cavity surface-emitting laser (VCSEL) to suppress back reflections of a laser beam emitted by the VCSEL.

A vertical cavity surface emitting laser (VCSEL) device comprising a VCSEL emitter having a waveguide with a guided portion and an antiguided portion is disclosed. The guided and antiguided portions may select and confine a mode of the VCSEL emitter. The antiguided portion may also be used to coherently couple adjacent VCSEL emitters.

The invention provides a photoelectric packaging structure. The structure comprises a first substrate, an electric integrated chip and a first optical integrated chip, wherein the electric integrated chip is located on the surface of one side of the first substrate. The first optical integrated chip internally comprises a plurality of vertical cavity surface emitting lasers which are distributed in a matrix, the plurality of first optical integrated chips circumferentially surround the electric integrated chip, and each vertical cavity surface emitting laser comprises a light emitting part located at the bottom of the substrate. Wherein the vertical cavity surface emitting laser emits an optical signal towards the surface of one side of the first substrate through the light emitting part based on signal data of the electric integrated chip. Optical signals do not need to be transmitted at the tops of the electric integrated chip and the first optical integrated chip, and a reflection structure does not need to be arranged, so that heat dissipation can be performed at the tops of the electric integrated chip and the first optical integrated chip, the heat dissipation space is increased, the heat dissipation rate is improved, the working temperature of the electric integrated chip and the optical integrated chip is reduced, and the service life of the electric integrated chip is prolonged. And the reliability of the photoelectric packaging structure is improved.

The exponential growth in deep learning models is challenging existing computing hardware. Optical neural networks (ONNs) accelerate machine learning tasks with potentially ultrahigh bandwidth and nearly no loss in data movement. Scaling up ONNs involves improving scalability, energy efficiency, compute density, and inline nonlinearity. However, realizing all these criteria remains an unsolved challenge. Here, we demonstrate a three-dimensional spatial time-multiplexed ONN architecture based on dense arrays of microscale vertical cavity surface emitting lasers (VCSELs). The VCSELs, coherently injection-locked to a leader laser, operate at gigahertz data rates with a 7T-phase-shift voltage on the 10-millivolt level. Optical nonlinearity is incorporated into the ONN with no added energy cost using coherent detection of optical interference between VCSELs.

A VCSEL device with a lithographic aperture and integrated electrostatic discharge event protection. The VCSEL device may comprise a plurality of layers forming a protective diode outside of the lithographic aperture area, wherein the surface area of the protective diode is larger than the surface area of said lithographic aperture.

A layered pulse generator for a vertical-cavity surface-emitting laser (“VCSEL”) driver is disclosed consisting of three elements: a low-speed pulse generator, a high-speed pulse generator, and a pulse generator selector, all of which are on-chip with the VCSEL driver. By providing these elements on-chip, overall system power and complexity are reduced while allowing for significantly higher pulse train frequencies compared with known systems. The high-speed pulse generator is capable of generating pulses faster and with higher resolution than that of the low-speed pulse generator. The high-speed pulse generator uses multiple clock outputs, phase shifted, and synthesized into a single pulse waveform capable of wide-ranging frequencies, duty cycles and pulse counts.

The application discloses a vertical cavity surface emitting semiconductor laser based on a lateral epitaxial technology and a preparation method. The core of the structure is to solve the problem of presetting a lower DBR through the lateral epitaxial technology, to preset the DBR first, to open a window on the DBR, to grow the functional area of the laser on the upper side of the DBR through the lateral epitaxial technology, to complete the preparation of the lower DBR, and then to prepare the upper DBR and the metal electrodes on the two sides through common processes, so that the vertical cavity surface emitting laser is formed. The direction of the electric injection is perpendicular to the direction of the laser emission, and the influence of the current spreading layer of the ultraviolet band VCSEL on the light field absorption can be avoided. The application is favorable for reducing the damage to the device, improving the yield and the device performance, well utilizing the high-quality material area grown through the lateral epitaxial technology, improving the crystal quality, improving the light emitting efficiency and the service life, and the electric field direction is the non-polarized direction of the material, so that the quantum confinement Stark effect can be effectively reduced, and the reduction of the quantum efficiency and the wavelength drift of the device under a large voltage can be inhibited.

This invention relates to the field of semiconductor lasers, and more particularly to a multi-chip ring array vertical cavity surface-emitting laser (VCSEL), comprising: a gain chip array, a beam-splitting axial conical lens group, a beam-combining axial conical lens group, and an output coupling mirror arranged coaxially. The gain chip array includes N (N>1) VECSEL gain chips arranged in M ​​concentric rings (M>1). The beam-splitting axial conical lens group includes M beam-splitting axial conical lenses. The beam-combining axial conical lens group includes M beam-combining axial conical lenses. The N laser beams first pass through the beam-splitting axial conical lens group to generate M-order Bessel beams, and then pass through the beam-combining axial conical lens group to combine into a resonant beam. This resonant beam resonates within the coaxial resonant cavity formed by the output coupling mirror and the gain chip array, resulting in the output laser beam. This invention employs a modular cascaded structure of axial conical lenses, realizing the parallel superposition of multiple rings of chips, fully utilizing the radial spatial dimension, and improving chip integration density.

The invention relates to the technical field of vertical cavity surface emitting lasers. The invention provides a buried tunnel junction type 940nm vertical cavity surface emitting laser and a preparation method thereof, and aims to solve the problem that a traditional oxidation limiting type vertical cavity surface emitting laser has limitation, most heat flow cannot smoothly pass through an oxidation limiting layer due to obstruction of the oxidation limiting layer and can only flow to a laser emitting area of an active area from an oxidation hole to cause heat accumulation. The buried tunnel junction can effectively realize the limiting function of an electric field and a light field and replace the function of an oxidation limiting layer in the vertical cavity surface emitting laser, meanwhile, the buried tunnel junction is high in heat conductivity, the heat flow transmission efficiency can be remarkably improved, heat accumulation of an active area is remarkably relieved, and the situation that heat flow transmission is blocked is avoided; formation of the buried tunnel junction does not introduce stress, the current crowding effect is small, the heat conductivity is high, heat flow transfer is not hindered, and therefore the influence of the self-heating effect on the electro-optical performance and the thermal performance of the laser is reduced.

The invention discloses a miniaturized pumping optical module based on a VCSEL (Vertical Cavity Surface Emitting Laser), which can realize miniaturization of the optical module through optical element layout and low-stress and less-stray-light installation, thereby being beneficial to meeting the requirements of performance test and pursuing of ultrahigh sensitivity by a large scientific device, and is characterized in that the miniaturized pumping optical module comprises a shell, the shell is formed by overlapping a photosensitive resin lower-layer structure shell, a photosensitive resin middle-layer structure shell and a photosensitive resin upper-layer structure shell layer by layer, a large gear and a small gear are arranged on the top face of the upper-layer structure shell, and a cylindrical groove where a quarter-wave plate is embedded is formed in the inner wall face of a center hole of the large gear. A VCSEL laser and a photoelectric detector which are parallel are arranged on the top face of the lower-layer structure shell, a polarization splitting prism is arranged in the upper-layer structure shell, a collimating lens set formed by overlapping a concave lens and a convex lens is arranged in a light source channel in the middle-layer structure shell, the transmission side of the polarization splitting prism is aligned with the quarter-wave plate, and the transmission side of the collimating lens set is aligned with the quarter-wave plate. The reflection side of the polarization splitting prism is connected with a photoelectric detector.

The application provides a vertical cavity surface emitting laser array structure, comprising: a substrate, a first ohmic metal layer, a first electrode, a first reflection layer, an active layer, an oxidation layer, a second reflection layer, a second ohmic metal layer and a second electrode which are sequentially stacked; the first ohmic metal layer comprises a plurality of connecting parts and extending parts, the connecting parts and the extending parts are an integral structure; the extending parts are distributed along a first direction and / or a second direction; in the light emitting area, the outermost optical aperture is adjacent to at least one extending part. The application provides a vertical cavity surface emitting laser array structure, which improves the ohmic contact area near the isolation groove position, improves the carrier concentration and further improves the light emitting power of the optical aperture.

The invention relates to the technical field of semiconductor lasers, in particular to a high-speed communication vertical-cavity surface-emitting laser and a preparation method thereof.The high-speed communication vertical-cavity surface-emitting laser comprises a substrate, an epitaxial structure is arranged on the substrate and comprises an active area, a transition DBR layer is arranged on the active area, and a tunnel junction is arranged in the center of the transition DBR layer; the tunnel junction comprises a P-type high-concentration C doping layer and an N-type high-concentration Te doping layer, and a top DBR layer is arranged on the transition DBR layer. The tunnel junction is used for replacing an oxide layer of a traditional oxidizing VCSEL and is used for providing current limitation and optical limitation. According to a traditional oxide layer, the oxidation depth is controlled by oxidizing Al0. 98Ga0. 02As to achieve current and optical limitation of the oxidation caliber, Al interface oxidation can be avoided by replacing the traditional oxide layer with a tunnel junction structure, and the problem of further growth of defects can be prevented. An oxide layer is replaced by a tunnel junction limiting structure, higher emission uniformity and higher repeatability manufacturing can be achieved, the size of an oxidation aperture can be accurately defined, and the stability of a mode can be controlled.

Disclosed in the present application is a rapid thermal annealing device (100), which is used for processing a wafer (41). The rapid thermal annealing device (100) comprises a housing (10), vertical-cavity surface-emitting lasers (20) and a plurality of control modules, wherein a reaction chamber (31) is defined in the housing (10), and the wafer (41) is located in a reaction chamber (11); two vertical-cavity surface-emitting lasers (20) are provided and are both located in the reaction chamber (11), the two vertical-cavity surface-emitting lasers (20) are arranged on two sides of the wafer (41) in the direction of thickness and are configured to heat the wafer (41), and each of the vertical-cavity surface-emitting lasers (20) comprises a plurality of heating units (21); and the number of the control modules is equal to that of the heating units (21), the control modules correspond to the heating units (21) on a one-to-one basis, and each control module is configured to control the turning-on and turning-off of the corresponding heating unit (21) and the magnitude of power thereof.

A vertical cavity surface emitting laser with transparent conducting layers comprises a substrate, a first reflecting layer, a plurality of active light emitting layers, a plurality of second reflecting layers and a plurality of transparent conducting layers. The first reflecting layer is arranged on the top surface, the first reflecting layer comprises a base part and a plurality of reflecting parts, the plurality of reflecting parts are arranged on the base part at intervals, a distance is formed between every two adjacent reflecting parts, and a plurality of exposed surfaces are defined by areas, without the plurality of reflecting parts, in the surface of the first reflecting layer. The plurality of active light-emitting layers are respectively and correspondingly arranged on the plurality of reflecting parts. The plurality of second reflecting layers are correspondingly located on the plurality of active light-emitting layers respectively. The plurality of transparent conductive layers are respectively and correspondingly arranged on the plurality of second reflecting layers. The vertical cavity surface emitting laser is not provided with an oxide layer with limited current, so that the vertical cavity surface emitting laser with a small-size carrying table, a light emitting surface or a light emitting hole can be manufactured.

A method for forming a vertical-cavity surface-emitting laser (VCSEL) includes: providing a substrate, including a first region and a second region, comprising: a substrate; a first mirror structure located on the substrate; an active layer located on the first mirror structure; a second mirror structure located on the active layer; forming a first groove in the second region, penetrating the second mirror structure and the active layer, and embedding the first mirror structure; forming an initial protective layer in the first groove, on the surface of the first region, and on the surface of the second region, filling the first groove; forming a mask structure on the initial protective layer that exposes the surface of the initial protective layer in the first groove and a portion of the surface of the initial protective layer on the first region, including a barrier layer and a photoresist layer located on the barrier layer; etching the initial protective layer using the mask structure as a mask until the substrate surface is exposed, forming a protective layer on the surface of the first region and the surface of the second region that exposes the first groove and a portion of the surface of the first region; and removing the mask structure. Device performance is improved.

Systems and methods are provided for a ring aperture vertical cavity surface emitting laser device for mode control. A VCSEL is provided in which the optical mode and current confinement are defined by patterning the same layer of the resonant cavity within the epitaxial layer having a ring aperture. The ring width can be small enough to be single mode along the radial direction. The two concentric boundaries forming the ring aperture can be of arbitrary shape as long as the width is small enough to be single mode along the radial direction.