594 results about "Vertical-cavity surface-emitting laser" patented technology

The invention relates to a light spot uniformity optimization method and system for a high-precision VCSEL device, and the method comprises the following steps: carrying out the light field collection of a light-emitting surface of the VCSEL device, obtaining the intensity distribution of original light spots, analyzing the non-uniformity of each light-emitting unit, and extracting the non-uniformity characteristics of the light spots. And carrying out deviation cause analysis based on the characteristics, and identifying device structure deviation parameters. According to the method, an etching process is optimized, a corrected oxidized aperture configuration scheme is obtained, near-field light field simulation is carried out by adopting a finite difference time domain method, and optimized light field distribution is verified and predicted. And finally, adaptive compensation design is carried out on the Bragg reflector structure based on a prediction result, light field regulation and control are realized, target light spot uniformity distribution is finally obtained, and the problem that systematic analysis and feedback control on non-uniformity causes of a light emitting unit layer in a device are lacked in the prior art is solved. And local bright spots or dark areas are caused.

The invention provides a low-cost and high-integration meteorological detection system for low-altitude meteorological service, and belongs to the technical field of meteorological detection. The low-cost and high-integration-level meteorological detection system for the low-altitude meteorological service comprises a plurality of small meteorological stations and MEMS sensors integrated with temperature, humidity, air pressure, wind speed, wind direction and the like. A plurality of small laser wind finding radars are based on an optical fiber laser and a VCSEL (Vertical Cavity Surface Emitting Laser) technology and adopt a modular design. And the data fusion module is used for fusing multi-source data of a ground station, a laser radar, a satellite and the like by adopting a four-dimensional variation assimilation algorithm to generate a 100-meter-resolution grid meteorological product. The technical bottleneck of traditional low-altitude meteorological detection is broken through, and a meteorological service solution is provided for the fields of urban fine management, navigation safety, intelligent agriculture and the like. The system has the characteristics of high cost performance, high flexibility and high resolution, and promotes low-altitude meteorological observation to be upgraded from sparse monitoring to global sensing.

The invention discloses a packaging method and device of a vertical cavity surface emitting laser, and belongs to the field of semiconductor laser chip packaging processes. The packaging heat dissipation cover is additionally arranged on the top of the VCSEL chip, the VCSEL chip is surrounded up and down by the packaging heat dissipation cover, the supporting connecting block and the bottom heat sink component, and the heat dissipation mode of the top of the device is adjusted from low-efficiency heat radiation to air to heat conduction through a high-heat-conductivity solid material. Compared with the prior art, the heat conduction capability of a medium near the center of a heat source can be effectively improved, and the blocking effect of a top DBR material on heat is remarkably reduced. In addition, the transverse component of heat flow at the top is further increased by using a chamfering structure in the through hole and a two-dimensional transparent heat conduction material, and the efficiency of the heat of the VCSEL chip flowing to the two sides of the top is improved.

The invention relates to the technical field of lasers, and discloses a vertical cavity surface emitting laser structure and a preparation method thereof. The preparation method comprises the steps that an epitaxial structure comprising a first reflector layer, a first limiting layer, an active layer, a second limiting layer and a second reflector layer is formed on the surface of one side of a substrate layer, and the epitaxial structure is provided with a light emitting area; an oxidation groove extending into the first reflector layer from the second reflector layer is formed in the light emitting area; forming an oxidation layer with an oxidation hole in the second reflector layer of the light emitting area; ion implantation is carried out on the epitaxial structure to form an ion implantation region and a current implantation region, the current implantation region surrounded by the ion implantation region is located in the light emitting region, and the projection of the current implantation region on the substrate layer covers the projection of the oxidation hole. On the premise that the oxide layer with the oxidation hole is formed, the ion injection region surrounding the current injection region and the oxidation hole is accurately and efficiently controlled to be formed in an ion injection mode, and the reliability, the bandwidth performance and the transmission rate of the laser structure can be effectively improved.

The invention provides a temperature control system and method, electronic equipment and a storage medium, and relates to the technical field of semiconductor laser temperature control. The temperature control system is used for the vertical-cavity surface-emitting laser, and comprises a temperature measurement assembly which is used for measuring the real-time temperature of the vertical-cavity surface-emitting laser and providing a feedback signal; the digital PID algorithm assembly is connected with the temperature measuring assembly and is used for determining a control signal according to the feedback signal and a set temperature; and the power driving assembly is connected with the digital PID algorithm assembly and is used for providing driving current according to the control signal so as to adjust the temperature of the vertical cavity surface emitting laser. According to the invention, a four-wire system wiring method is adopted to eliminate lead resistance errors, and a high-precision element is matched, so that the temperature detection precision reaches 2mK, and the accuracy is remarkably improved.

The invention provides a well drilling anti-interference communication system based on a VCSEL (Vertical Cavity Surface Emitting Laser), the VCSEL and a manufacturing method thereof, and the manufacturing method comprises the following steps: calculating the light field intensity distribution of a high-order transverse mode through an intrinsic mode expansion method and a Laguerre-Gaussian model based on the epitaxial structure parameters of a laser; determining a target area which begins to perform downward annular etching on the surface of the p-DBR layer, wherein the target area coincides with a light field intensity peak area of the high-order transverse mode; performing annular etching in the target area to form an annular groove, and etching at least seven pairs of p-DBR layers inwards in the groove; the communication system comprises a signal transmitting end arranged on the derrick side, and the signal transmitting end is provided with the vertical cavity surface emitting laser; the p-DBR region of the vertical cavity surface emitting laser is provided with an annular etching structure; the graded-index fluorinated plastic optical fiber is used as a transmission medium and is connected with the derrick side and the logging room side; and the optical signal receiving end is arranged at the logging room side and is used for receiving and converting the optical signal into an electric signal.

The invention relates to a Spin Exchange Relaxation-Free (SERF)-based magnetometer system (100) for detecting ultra- weak magnetic fields, particularly suited for bio¬ sensing applications such as MEG, MCG, and MRI. The system operates at room temperature and includes a VCSEL (101) emitting dual beams tuned to Rubidium-87 transitions, a microfabricated vapor cell (102) with LIAD-based heating (103), and an optical assembly (104) for polarization control. A detection unit (105) converts Faraday rotation into electrical signals, enhanced by lock-in amplification. Magnetic shielding (106), thermal management (107), and relaxation mitigation maintain SERF conditions. A calibration subsystem (109) and embedded machine learning module (110) optimize sensitivity in real time. The compact, cryogen-free architecture enables portable and wearable applications. The invention achieves femtotesla-level sensitivity while overcoming limitations of conventional SQUID-based systems, making it suitable for clinical and field deployments.

The invention relates to an electric injection quantum dot vertical cavity surface emitting laser and a preparation method thereof. The laser structure comprises a substrate, a bottom reflector, a first current expansion layer, a waveguide layer, an electron injection layer, an active layer, a hole injection layer, a second current expansion layer and a top reflector. A corresponding top reflector is arranged in an opening area in the waveguide layer and serves as a resonant cavity of the laser, and a light field is guided by the waveguide layer to be efficiently oscillated and amplified in the resonant cavity. In the preparation process, good lattice matching between the bottom reflector and the substrate is ensured through epitaxial growth, interface defects and stress are reduced, low-cost methods such as spraying, spin coating and ink-jet printing are used, operation is easy and convenient, and large-area preparation can be achieved. The laser realizes bottom light emission, optimizes current injection, improves light emission and heat dissipation performance, controls a resonant cavity light field to improve device performance, and has the advantages of low power consumption, high light beam collimation and the like.

The invention discloses a vertical cavity surface emitting laser. The vertical cavity surface emitting laser comprises a substrate, a plurality of arrays arranged on the substrate and a plurality of insulating grooves, the insulating grooves surround the array; each array comprises a plurality of light-emitting units and a plurality of oxidation grooves, each light-emitting unit comprises at least one oxidation limiting layer, and the oxidation grooves are arranged around at least one part of the periphery of the light-emitting units and expose the oxidation limiting layers; the array further comprises a plurality of insulation areas corresponding to at least part of the oxidation grooves. And the insulating regions are arranged around the side walls and the bottoms of the corresponding oxidation grooves. According to the embodiment of the invention, the breakdown risk of the oxidation groove can be reduced, and the reliability of the vertical-cavity surface-emitting laser is improved.

An emitter includes a substrate; a current-blocking distributed Bragg reflector (DBR) arranged on the substrate, wherein the current-blocking DBR includes a plurality of p-n junctions connected vertically in series to form a bidirectional current-blocking structure; a bottom contact layer arranged on the current-blocking DBR; a bottom DBR arranged on the bottom contact layer; a top DBR arranged on the bottom DBR; an active region configured to generate a laser light, wherein the active region is arranged between the bottom DBR and the top DBR; a top contact layer arranged on the top DBR; and an optical output arranged over the top DBR, wherein the emitter is configured to emit the laser light via the optical output.

The invention discloses a thin film light-transmitting bead black light sensor ToF packaging structure which comprises a substrate, a vertical cavity surface emitting laser, an ASIC chip, black plastic packaging glue and light-transmitting beads. The vertical cavity surface emitting laser and the ASIC chip are arranged on the substrate and are electrically connected with the substrate through routing, and light-transmitting beads are arranged on a first emitting end of the vertical cavity surface emitting laser and a first receiving end of the ASIC chip; the black plastic packaging adhesive is packaged on the vertical cavity surface emitting laser, the ASIC chip and the light-transmitting beads, the tops of the two light-transmitting beads protrude out of the top surface of the black plastic packaging adhesive, and the black plastic packaging adhesive forms an isolation retaining wall between the vertical cavity surface emitting laser and the ASIC chip, so that light emitted by the vertical cavity surface emitting laser penetrates through the light-transmitting beads and then is emitted out. The ASIC chip receives the reflected light passing through the light-transmitting bead. The invention relates to the technical field of semiconductor packaging, and can solve the technical problems of a traditional transparent optical sensor packaging structure.

The invention relates to the technical field of semiconductor photoelectrons, and discloses a vertical-cavity surface-emitting laser with an inverted structure and a preparation method of the vertical-cavity surface-emitting laser. The vertical cavity surface emitting laser with the inverted structure comprises a heterogeneous substrate, wherein a heat dissipation functional layer, a metal adhesion layer and a metal bonding layer are arranged on the surface of the heterogeneous substrate from bottom to top; the epitaxial structure comprises a p-type electrode, an ITO current expansion layer, a SiO2 current limiting layer, a first dielectric DBR layer, a p-type GaN layer, an electron blocking layer, a quantum well active region, an n-type GaN layer, a second dielectric DBR layer and an n-type electrode from bottom to top; and the p-type electrode is positioned at the bottom of the epitaxial structure and is bonded with the metal bonding layer to form an inverted structure. According to the vertical cavity surface emitting laser with the inverted structure provided by the invention, the heat dissipation function layer and the inverted structure design effectively improve the heat dissipation capability and the current uniformity of the device, and the service life, the performance stability and the reliability of the device are remarkably improved.

The invention discloses a high-power vertical cavity surface emitting laser and a preparation method thereof. The high-power vertical cavity surface emitting laser comprises a substrate; the semiconductor epitaxial layer is positioned on one side of the substrate; the semiconductor epitaxial layer comprises at least one first region and a second region arranged around the first region; the semiconductor epitaxial layer in the second region is etched to form a groove; the filling layer is filled in the groove; the dielectric layer comprises a first dielectric layer and is positioned on one side, far away from the substrate, of the semiconductor epitaxial layer; wherein the dielectric layer comprises a first opening; the vertical projection of the first opening on the semiconductor epitaxial layer is located in the first region; the upper electrode is positioned on one side, far away from the substrate, of the first dielectric layer; the upper electrode is electrically connected with the light-emitting structure through the first opening, and the upper electrode located in the second area is separated from the filling layer through the first dielectric layer. According to the technical scheme provided by the invention, the flatness of the device is ensured, and the performance and reliability of the device are improved.

The invention discloses a refractive index sensing chip of an integrated BIC metasurface laser, which integrates a vertical cavity surface emitting laser (VCSEL) and a novel ball road pattern metasurface designed based on a BIC theory, and designs a high-sensitivity refractive index sensor by using a continuous domain bound state theory. The ball road pattern structure is prepared through electron beam lithography and a gold evaporation-stripping process, has uniform nanoscale patterns, and can realize high refractive index sensitivity. The chip can be used in the field of biosensing. By optimizing structural parameters and a preparation process, the optical sensing chip with high integration level and high sensitivity is realized, and a new solution is provided for unmarked biological detection.

The invention relates to the technical field of semiconductor lasers, and discloses a high-temperature-adaptability VCSEL (Vertical Cavity Surface Emitting Laser) light source which comprises two VCSELs connected in parallel and can respectively obtain high-efficiency light output in low-temperature and high-temperature environments. Wherein the peak value of material gain of an active region of the VCSEL which normally works at low temperature at room temperature is located in the long wave direction of a resonant cavity mode; the peak value of the VCSEL material gain normally working at high temperature is located in the short wave direction of the cavity mode, so that the cavity mode moves towards the peak value of the material gain at low temperature and high temperature to obtain high mode gain. Two paths of lasers emitted by the VCSELs are combined into one path through the optical fiber beam combiner, so that the device can realize stable light output within a large temperature change range, and the temperature monitoring and prediction layer and the adaptive layer are arranged to realize temperature monitoring and prediction and intelligent adaptive adjustment.

The invention relates to the field of semiconductor lasers, and discloses a vertical cavity surface emitting laser based on a composite metal substrate and photonic crystals, which comprises a CIC composite metal substrate, a GaAs buffer layer, a lower n-type DBR, an n-type contact layer, a multi-junction cascade active region, a p-type contact layer and an upper p-type DBR which are sequentially arranged from bottom to top, a plurality of two-dimensional photonic crystals are etched in the light emitting direction of the upper layer p-type DBR; the thermal stability and reliability of the device under a high-power continuous working condition are effectively improved, stable single-mode output is realized, light field limitation is enhanced, light beam quality is improved, array and on-chip integration are facilitated, the problem of low efficiency of a 650nm red light laser in the aspect of single-mode output of a base VCSEL is effectively solved, and the device has a wide application prospect. The method has a good application prospect and a wide application range.

The invention discloses a vertical cavity surface emitting laser, a preparation method and a laser light emitting module, the laser comprises a laser body, the surface of the laser body is provided with an annular insulation structure, and one side of the laser body forms a circular truncated cone structure; the laser body comprises a limiting layer which is located in the circular truncated cone structure. The limiting layer comprises limiting through holes, and the diameter range of the limiting through holes is 0.5-6 microns; the ohmic contact ring is arranged on the surface of the circular truncated cone structure; the first electrode layer is arranged on the side, away from the laser body, of the ohmic contact ring, the first electrode layer is connected with the ohmic contact ring through the first opening, the number difference between carriers distributed in the center of the light-emitting hole and carriers at the edge of the light-emitting hole is reduced, and therefore the carriers in the light-emitting hole are distributed more evenly; according to the array chip, black holes are prevented from being formed in the center of emergent light spots, Gaussian light spots can be formed easily, and meanwhile the heat resistance, direct current injection resistance and large current injection resistance of the array chip can be improved.

The invention relates to the technical field of lasers, in particular to a vertical-cavity surface-emitting laser and a preparation method thereof, and the vertical-cavity surface-emitting laser comprises a substrate layer, an N-type DBR structure, a first spacing layer, an active layer, a second spacing layer and a P-type DBR structure which are stacked in sequence; wherein the P-type DBR structure is formed by alternately arranging a high-refractive-index P-type semiconductor layer and a low-refractive-index P-type semiconductor layer for a plurality of cycles, and the low-refractive-index P-type semiconductor layer is a P-type semiconductor layer containing an Al component; a low-refractive-index P-type semiconductor layer adjacent to the second spacing layer in the P-type DBR structure is used as a first oxidation limiting layer, and the molar fraction of Al component in the first oxidation limiting layer before oxidation is greater than 0.98. According to the invention, the single transverse mode output characteristic of the vertical cavity surface emitting laser under high power can be improved at least.

In some implementations, a vertical cavity surface emitting laser (VCSEL) array may include a substrate. In some implementations, the VCSEL array may include a set of cathodes disposed on the substrate in a first direction, wherein a cathode, of the set of cathodes, is defined by a serpentine shape. In some implementations, the VCSEL array may include a set of anodes disposed on the substrate in a second direction, wherein an anode, of the set of anodes, is defined by the serpentine shape.

The disclosed method that may be used for eye tracking includes measuring, by a controller, a distance to an object (316) based on a combination of polarization information of detected light and time-of-flight information of the detected light, wherein the detected light results from at least one of scattering or reflection of a light beam from the object (316). The disclosed method additionally includes performing, by an artificial reality system that includes the controller, one or more user interaction procedures based on information that includes the measured distance to the object (316). A system includes a laser scanning polarization imager including and a detector system (302) including a plurality of photodetectors 304. Each photodetector (306) includes a polarizer (308) having a particular polarization direction oriented at zero, 45, 90 and 135 degrees. A light source (310) may include a vertical cavity surface emitting laser (VCSEL) to emit a light beam (312). A reflector (314), such as a MEMS scanner, directs the light beam (312) onto the object (316), such as an eye. Light (318), e.g., specular and / or diffusive, is reflected and / or scattered from the object (316) and detected by the detector system (302). A controller measures a distance to the object (316) based on this detected light (318). Additionally, the controller measures position and / or size of one or more regions (320) of the object, such as a pupil and / or cornea.

The vertical cavity surface emitting laser comprises a plurality of light emitting arrays, and each light emitting array is provided with at least two light emitting units. Wherein each of the light emitting units includes a substrate layer having a top surface and a bottom surface; a first Bragg reflector on the top surface of the substrate layer; the active region is positioned on one side, far away from the substrate layer, of the first Bragg reflector; the electrical limiting layer provides optical and electrical limitation for the laser, and the electrical limiting layer is provided with a light-emitting hole for current and laser to pass through; the second Bragg reflector is positioned on one side, far away from the first Bragg reflector, of the active region; wherein every two adjacent light-emitting units on the light-emitting array are arranged in the oblique line direction.

The utility model relates to the technical field of optical devices, in particular to a multimode short-distance optical device, which comprises a circuit board, a light emitting element, a light receiving element, a cushion block, a thermoelectric refrigerating unit and an optical lens. The light emitting element and the light receiving element are both arranged on the cold face of the thermoelectric refrigerating unit, the light emitting element is a vertical cavity surface emitting laser, and the optical lens is arranged on the emergent light path of the light emitting element and the incident light path of the light receiving element. And the reflector is used for reflecting and focusing the emitted light of the light emitting element into the multimode optical fiber and reflecting and focusing the incident light of the multimode optical fiber into the light receiving element. According to the utility model, a flexible assembly form is provided, the temperature of the heating element can be effectively controlled, and the problems of low efficiency and low precision in the aging process are solved; in addition, by arranging the light paths on the same stable structure, stable support is provided for the light paths, and the stability of the light paths is improved.

An optical signal generation system for multi-level optical signal generation using binary keying comprises an array of light sources, a control circuit, and an optical coupling mechanism. The system may be operable to configure, using the control circuit, each of the light sources in the array of light sources in a HIGH or LOW state base on a received input signal to generate a plurality of optical output signals. The plurality of optical output signals may be communicated to the optical coupling mechanism and combined into a single optical signal thereby generating a multi-level output signal representative of the received input signal. The multi-level output signal may comprise a Pulse Amplitude Modulated (PAM) equivalent signal. The array of light sources may comprise vertical cavity surface emitting lasers (VCSELs), edge-emitting lasers, or light emitting diodes (LEDs).

The invention provides a high-speed vertical-cavity surface-emitting laser preparation method and a high-speed vertical-cavity surface-emitting laser, and relates to the technical field of lasers, and the method comprises the steps: providing an epitaxial structure which comprises a substrate, a lower Bragg reflector and an active region, the top surface of the active region is provided with a first region, and a current expansion layer is formed on the first region; the substrate comprises a second area which is not covered by the lower Bragg reflector; forming a first dielectric film on the epitaxial structure; etching the first dielectric film above the current expansion layer to obtain a first window; etching the first dielectric film above the second area to obtain a second window; forming a first electrode in the first window; forming a second electrode in the second window; an upper dielectric Bragg reflector is arranged above the first electrode, and a plurality of photonic crystal air holes extending downwards are formed in the top surface of the upper dielectric Bragg reflector; and the depths of the photonic crystal air holes are gradually increased along the direction from the center of the upper dielectric Bragg reflector to the circumferential outer side of the upper dielectric Bragg reflector.

The invention discloses a semiconductor laser pulse driving circuit based on a super capacitor, and belongs to the technical field of electronic circuits. The circuit comprises at least one super capacitor which supplies power to the vertical cavity surface emitting laser; the current control and sampling circuit is used for controlling the current circulation and closing of the vertical cavity surface emitting laser and sampling and monitoring the discharge current of the super capacitor through the current control and sampling circuit, and the current control and sampling circuit is connected with the vertical cavity surface emitting laser and the super capacitor in series to form a laser discharge loop; and the charging circuit is used for dynamically adjusting the voltage output by the charging circuit according to the sampling result of the current sampling point so as to adjust the voltage value of the super capacitor. The super capacitor is used for supplying power to the vertical cavity surface emitting laser, millisecond-level long-pulse and large-current driving current output can be achieved, meanwhile, the average power requirement of a circuit front-end power source is lowered by means of duty ratio limitation of practical application, and then cost is lowered.

The invention discloses a rapid thermal annealing device and a control method, the rapid thermal annealing device is used for wafer processing, the rapid thermal annealing device comprises a shell, a vertical cavity surface emitting laser and a plurality of control modules, and a reaction cavity is defined in the shell; the number of the vertical cavity surface emitting lasers is two, the two vertical cavity surface emitting lasers are both located in the reaction cavity, the two vertical cavity surface emitting lasers are arranged on the two sides of the wafer in the thickness direction and used for heating the wafer located in the reaction cavity, and each vertical cavity surface emitting laser comprises a plurality of heating units; the number of the control modules is equal to that of the heating units, and the control modules are in one-to-one correspondence with the heating units; and each control module is used for controlling the opening, closing and power of the corresponding heating unit. The rapid thermal annealing device comprises the two vertical cavity surface emitting lasers, so that the heating efficiency of the wafer is higher, the heating rate is higher, the temperature difference on the surface of the wafer can be eliminated, the pattern load effect of the wafer is solved, and the annealing quality of the wafer is further improved.

The embodiment of the invention relates to a vertical cavity surface emitting laser and a preparation method thereof. The vertical cavity surface emitting laser comprises a substrate and a resonant cavity structure arranged on the substrate, the resonant cavity structure comprises a bottom reflector structure, an active layer, a photoelectric limiting layer and a top reflector structure; the photoelectric limiting layer is provided with a photoelectric limiting pattern used for limiting a light emitting area of the vertical cavity surface emitting laser; the projection shape of the photoelectric limiting pattern on the substrate at least comprises a current concentration area; and an ion implantation region at least forming and covering the current concentration region, the ion implantation region being configured to passivate the current concentration region. According to the invention, the ion implantation region is formed by performing ion implantation in the current concentration region, and the current concentration region is passivated, so that the reverse breakdown resistance of the device is improved.

The invention provides a vertical cavity surface emitting laser and an epitaxial growth method thereof, and belongs to the technical field of semiconductors. The vertical cavity surface emitting laser comprises a substrate, an N-DBR, an active region growth layer, an oxidation limiting layer, a tunnel junction, a P-DBR and a surface ohmic contact layer which are stacked in sequence. The tunnel junction comprises a p + + layer, a first diffusion barrier layer, an n + + layer and a second diffusion barrier layer which are stacked in sequence. The p + + layer and the n + + layer are obtained through pulse doping growth, and P-DBR growth is carried out after stepped heating is carried out on the tunnel junction. The invention provides a comprehensive process based on pulse doping, an in-situ protection layer and stepped heating control, pulse doping is adopted when the n + + / p + + layer of the tunnel junction grows, the first diffusion barrier layer, the second diffusion barrier layer and the stepped heating process in subsequent growth are combined, and doping diffusion is remarkably inhibited while high conductivity of the tunnel junction is maintained.

The invention relates to the technical field of semiconductor lasers, in particular to a VCSEL chip manufacturing method and a laser. The preparation method comprises the following steps: growing on a substrate by adopting an epitaxial technology to obtain a VCSEL (Vertical Cavity Surface Emitting Laser) substrate; growing on the top of the VCSEL substrate by adopting a growth process to obtain a surface lens, wherein the refractive index of the surface lens gradually changes upwards from the VCSEL substrate; growing an h-BN film on the top of the surface lens to obtain a VCSEL (Vertical Cavity Surface Emitting Laser) with the lens; the VCSEL chip is oxidized through a wet oxidation method, an oxidation layer is obtained on the outer surface of the surface lens, so that the surface lens has a light beam focusing effect, and the VCSEL chip is obtained. According to the VCSEL chip prepared by the embodiment of the invention, the surface lens with the step structure and the h-BN film which have the focusing function are effectively integrated with the VCSEL, so that the stability of the whole device of the VCSEL chip is ensured.

Provided are a new vertical cavity surface emitting laser structure and a manufacturing method thereof. The structure includes a substrate layer, a lower N-type DBR, an active region, an upper N-type DBR and a mixed dielectric DBR sequentially arranged from bottom to top, where a second-class tunnel junction is arranged on one side of the active region close to the upper N-type DBR, where the second-class tunnel junction is embedded in a bottom of the upper N-type DBR and surrounded by the upper N-type DBR, and the substrate layer, the lower N-type DBR, the active region, the upper N-type DBR, the mixed dielectric DBR and the second-class tunnel junction are all coaxial elliptical cylinders; negative electrodes are arranged on the lower N-type DBR, and positive electrodes are arranged on the upper N-type DBRs substrate layer.