219 results about "Vertical-cavity surface-emitting laser" patented technology

The invention provides a well drilling anti-interference communication system based on a VCSEL (Vertical Cavity Surface Emitting Laser), the VCSEL and a manufacturing method thereof, and the manufacturing method comprises the following steps: calculating the light field intensity distribution of a high-order transverse mode through an intrinsic mode expansion method and a Laguerre-Gaussian model based on the epitaxial structure parameters of a laser; determining a target area which begins to perform downward annular etching on the surface of the p-DBR layer, wherein the target area coincides with a light field intensity peak area of the high-order transverse mode; performing annular etching in the target area to form an annular groove, and etching at least seven pairs of p-DBR layers inwards in the groove; the communication system comprises a signal transmitting end arranged on the derrick side, and the signal transmitting end is provided with the vertical cavity surface emitting laser; the p-DBR region of the vertical cavity surface emitting laser is provided with an annular etching structure; the graded-index fluorinated plastic optical fiber is used as a transmission medium and is connected with the derrick side and the logging room side; and the optical signal receiving end is arranged at the logging room side and is used for receiving and converting the optical signal into an electric signal.

The invention relates to the technical field of lasers, in particular to a vertical-cavity surface-emitting laser and a preparation method thereof, and the vertical-cavity surface-emitting laser comprises a substrate layer, an N-type DBR structure, a first spacing layer, an active layer, a second spacing layer and a P-type DBR structure which are stacked in sequence; wherein the P-type DBR structure is formed by alternately arranging a high-refractive-index P-type semiconductor layer and a low-refractive-index P-type semiconductor layer for a plurality of cycles, and the low-refractive-index P-type semiconductor layer is a P-type semiconductor layer containing an Al component; a low-refractive-index P-type semiconductor layer adjacent to the second spacing layer in the P-type DBR structure is used as a first oxidation limiting layer, and the molar fraction of Al component in the first oxidation limiting layer before oxidation is greater than 0.98. According to the invention, the single transverse mode output characteristic of the vertical cavity surface emitting laser under high power can be improved at least.

The invention provides a vertical cavity surface emitting laser and an epitaxial growth method thereof, and belongs to the technical field of semiconductors. The vertical cavity surface emitting laser comprises a substrate, an N-DBR, an active region growth layer, an oxidation limiting layer, a tunnel junction, a P-DBR and a surface ohmic contact layer which are stacked in sequence. The tunnel junction comprises a p + + layer, a first diffusion barrier layer, an n + + layer and a second diffusion barrier layer which are stacked in sequence. The p + + layer and the n + + layer are obtained through pulse doping growth, and P-DBR growth is carried out after stepped heating is carried out on the tunnel junction. The invention provides a comprehensive process based on pulse doping, an in-situ protection layer and stepped heating control, pulse doping is adopted when the n + + / p + + layer of the tunnel junction grows, the first diffusion barrier layer, the second diffusion barrier layer and the stepped heating process in subsequent growth are combined, and doping diffusion is remarkably inhibited while high conductivity of the tunnel junction is maintained.

A VCSEL device with a lithographic aperture and integrated electrostatic discharge event protection. The VCSEL device may comprise a plurality of layers forming a protective diode outside of the lithographic aperture area, wherein the surface area of the protective diode is larger than the surface area of said lithographic aperture.

A layered pulse generator for a vertical-cavity surface-emitting laser (“VCSEL”) driver is disclosed consisting of three elements: a low-speed pulse generator, a high-speed pulse generator, and a pulse generator selector, all of which are on-chip with the VCSEL driver. By providing these elements on-chip, overall system power and complexity are reduced while allowing for significantly higher pulse train frequencies compared with known systems. The high-speed pulse generator is capable of generating pulses faster and with higher resolution than that of the low-speed pulse generator. The high-speed pulse generator uses multiple clock outputs, phase shifted, and synthesized into a single pulse waveform capable of wide-ranging frequencies, duty cycles and pulse counts.

This invention relates to the field of semiconductor lasers, and more particularly to a multi-chip ring array vertical cavity surface-emitting laser (VCSEL), comprising: a gain chip array, a beam-splitting axial conical lens group, a beam-combining axial conical lens group, and an output coupling mirror arranged coaxially. The gain chip array includes N (N>1) VECSEL gain chips arranged in M ​​concentric rings (M>1). The beam-splitting axial conical lens group includes M beam-splitting axial conical lenses. The beam-combining axial conical lens group includes M beam-combining axial conical lenses. The N laser beams first pass through the beam-splitting axial conical lens group to generate M-order Bessel beams, and then pass through the beam-combining axial conical lens group to combine into a resonant beam. This resonant beam resonates within the coaxial resonant cavity formed by the output coupling mirror and the gain chip array, resulting in the output laser beam. This invention employs a modular cascaded structure of axial conical lenses, realizing the parallel superposition of multiple rings of chips, fully utilizing the radial spatial dimension, and improving chip integration density.

The application provides a vertical cavity surface emitting laser array structure, comprising: a substrate, a first ohmic metal layer, a first electrode, a first reflection layer, an active layer, an oxidation layer, a second reflection layer, a second ohmic metal layer and a second electrode which are sequentially stacked; the first ohmic metal layer comprises a plurality of connecting parts and extending parts, the connecting parts and the extending parts are an integral structure; the extending parts are distributed along a first direction and / or a second direction; in the light emitting area, the outermost optical aperture is adjacent to at least one extending part. The application provides a vertical cavity surface emitting laser array structure, which improves the ohmic contact area near the isolation groove position, improves the carrier concentration and further improves the light emitting power of the optical aperture.

The invention relates to the technical field of semiconductor lasers, in particular to a high-speed communication vertical-cavity surface-emitting laser and a preparation method thereof.The high-speed communication vertical-cavity surface-emitting laser comprises a substrate, an epitaxial structure is arranged on the substrate and comprises an active area, a transition DBR layer is arranged on the active area, and a tunnel junction is arranged in the center of the transition DBR layer; the tunnel junction comprises a P-type high-concentration C doping layer and an N-type high-concentration Te doping layer, and a top DBR layer is arranged on the transition DBR layer. The tunnel junction is used for replacing an oxide layer of a traditional oxidizing VCSEL and is used for providing current limitation and optical limitation. According to a traditional oxide layer, the oxidation depth is controlled by oxidizing Al0. 98Ga0. 02As to achieve current and optical limitation of the oxidation caliber, Al interface oxidation can be avoided by replacing the traditional oxide layer with a tunnel junction structure, and the problem of further growth of defects can be prevented. An oxide layer is replaced by a tunnel junction limiting structure, higher emission uniformity and higher repeatability manufacturing can be achieved, the size of an oxidation aperture can be accurately defined, and the stability of a mode can be controlled.

Disclosed in the present application is a rapid thermal annealing device (100), which is used for processing a wafer (41). The rapid thermal annealing device (100) comprises a housing (10), vertical-cavity surface-emitting lasers (20) and a plurality of control modules, wherein a reaction chamber (31) is defined in the housing (10), and the wafer (41) is located in a reaction chamber (11); two vertical-cavity surface-emitting lasers (20) are provided and are both located in the reaction chamber (11), the two vertical-cavity surface-emitting lasers (20) are arranged on two sides of the wafer (41) in the direction of thickness and are configured to heat the wafer (41), and each of the vertical-cavity surface-emitting lasers (20) comprises a plurality of heating units (21); and the number of the control modules is equal to that of the heating units (21), the control modules correspond to the heating units (21) on a one-to-one basis, and each control module is configured to control the turning-on and turning-off of the corresponding heating unit (21) and the magnitude of power thereof.

A vertical cavity surface emitting laser with transparent conducting layers comprises a substrate, a first reflecting layer, a plurality of active light emitting layers, a plurality of second reflecting layers and a plurality of transparent conducting layers. The first reflecting layer is arranged on the top surface, the first reflecting layer comprises a base part and a plurality of reflecting parts, the plurality of reflecting parts are arranged on the base part at intervals, a distance is formed between every two adjacent reflecting parts, and a plurality of exposed surfaces are defined by areas, without the plurality of reflecting parts, in the surface of the first reflecting layer. The plurality of active light-emitting layers are respectively and correspondingly arranged on the plurality of reflecting parts. The plurality of second reflecting layers are correspondingly located on the plurality of active light-emitting layers respectively. The plurality of transparent conductive layers are respectively and correspondingly arranged on the plurality of second reflecting layers. The vertical cavity surface emitting laser is not provided with an oxide layer with limited current, so that the vertical cavity surface emitting laser with a small-size carrying table, a light emitting surface or a light emitting hole can be manufactured.

A method for forming a vertical-cavity surface-emitting laser (VCSEL) includes: providing a substrate, including a first region and a second region, comprising: a substrate; a first mirror structure located on the substrate; an active layer located on the first mirror structure; a second mirror structure located on the active layer; forming a first groove in the second region, penetrating the second mirror structure and the active layer, and embedding the first mirror structure; forming an initial protective layer in the first groove, on the surface of the first region, and on the surface of the second region, filling the first groove; forming a mask structure on the initial protective layer that exposes the surface of the initial protective layer in the first groove and a portion of the surface of the initial protective layer on the first region, including a barrier layer and a photoresist layer located on the barrier layer; etching the initial protective layer using the mask structure as a mask until the substrate surface is exposed, forming a protective layer on the surface of the first region and the surface of the second region that exposes the first groove and a portion of the surface of the first region; and removing the mask structure. Device performance is improved.

Systems and methods are provided for a ring aperture vertical cavity surface emitting laser device for mode control. A VCSEL is provided in which the optical mode and current confinement are defined by patterning the same layer of the resonant cavity within the epitaxial layer having a ring aperture. The ring width can be small enough to be single mode along the radial direction. The two concentric boundaries forming the ring aperture can be of arbitrary shape as long as the width is small enough to be single mode along the radial direction.

A vertical cavity surface emitter (VCSEL) has a body comprising a vertical stack of stacked semiconductor layers, including: a current-limiting region enclosing a low-resistance current-flow region defined by a high-resistance current-flow region, and a first epitaxial sublayer located near the current-limiting region, wherein the first epitaxial sublayer includes a projection or recess defining a main cavity, and the remainder of the first epitaxial sublayer defines an outer cavity;wherein the projection or recess is defined by a physical step h which is predetermined according to the following equation: qλ0 - mλ1 = n0 h where λ0 is a resonant wavelength of the light in the main cavity, λ1 is a resonant wavelength of the light in the outer cavity, q is a positive half-integer, n0 is the effective refractive index in the main cavity, and m is a constant.;

This invention discloses a dual-modal sensing system for proximity and tactile sensing applied to underwater end effectors, belonging to the field of robot sensing technology. It includes a multi-region optical ranging unit, an array-type tactile sensing unit, and a data acquisition and processing device. The multi-region optical ranging unit houses a vertical-cavity surface-emitting laser and a single-photon avalanche diode array detector, located above an angle-adjustable substrate. The array-type tactile sensing unit contains an electrode layer and a dielectric layer. The data acquisition and processing device includes a waterproof layer, a connecting device, a data processing unit, a main control unit, a water inlet, and a base. This invention achieves spatial coupling of the sensing areas and effective connection between the proximity and tactile fields by focusing the center of the optical proximity field directly above the tactile array. It can be installed on underwater end effectors to achieve continuous underwater near-field non-contact and contact sensing, solving the problems of near-field visual perception distortion and ineffective connection of sensing information.

[Object] To provide a vertical cavity surface emitting laser device and a vertical cavity surface emitting laser device array that use a GaAs substrate and have excellent light emission efficiency and reliability.[Solving Means] A vertical cavity surface emitting laser device according to the present technology includes: a substrate; and a light-emitting unit. The substrate is formed of InxGa1-xAs (x is 0.005 or more and 0.015 or less) and has a carrier concentration of less than 5×1017 / cm3. The light-emitting unit includes a first distributed Bragg reflector (DBR) that is formed on the substrate and reflects light having a specific wavelength, a second DBR that reflects light having the wavelength, and an active region that is disposed between the first DBR and the second DBR and generates light emission due to carrier recombination.

The utility model provides a vertical cavity surface emitting laser and an array, and relates to the technical field of semiconductor lasers. The vertical-cavity surface-emitting laser comprises a substrate, an N-type Bragg reflection layer, an active region and a P-type Bragg reflection layer which are stacked in sequence, wherein one side, close to the active region, of the P-type Bragg reflection layer or a P-type region of the active region is provided with a non-oxidized semi-insulating current limiting layer growing at the temperature of 200-430 DEG C, the current limiting layer is provided with a first through hole, one side, close to the active region, of the P-type Bragg reflection layer is provided with a boss, the first through hole is filled with the boss, and the first through hole is provided with a second through hole. The area where the boss is located is a current injection area.

Vertical-cavity surface-emitting lasers (VCSELs) and associated methods of manufacturing are provided. An example VCSEL includes a first reflector, a second reflector, and an active region disposed between the first reflector and the second reflector. The VCSEL further includes an electrical aperture defining a current confinement region configured to direct current to the active region and an optical aperture defining a medium through which light produced by the active region is emitted from the VCSEL. At least one dimension of the optical aperture of the VCSEL is formed independent of the electrical aperture of the VCSEL. In some instances, the dimension of the optical aperture is a first diameter such that the first diameter of the optical aperture is formed independent of a second diameter defined by the electrical aperture.

The application relates to a tunable vertical cavity surface emitting laser structure, which comprises a vertical cavity surface emitting laser unit, a micro-electro-mechanical system device bonded with the vertical cavity surface emitting laser unit, an independently controllable piezoelectric material structure arranged between the vertical cavity surface emitting laser unit and the micro-electro-mechanical system device, and a control unit connected with the vertical cavity surface emitting laser unit and the micro-electro-mechanical system device, wherein the control unit adjusts the displacement and angle between the vertical cavity surface emitting laser unit and the micro-electro-mechanical system device by controlling the voltage applied to the piezoelectric material structure. The tunable vertical cavity surface emitting laser structure is distinguished from the prior art in function in that coaxial parallel control and bidirectional driving are provided, and the biggest feature of the structure is that a plurality of independently controllable piezoelectric material structures are introduced in the bonding area, so that the preliminary adjustment of the air gap and the coaxial effect of the overall light source device are realized.

A vertical-cavity surface-emitting laser device includes a substrate, at least one electrode layer, a first reflective layer, a plurality of active light-emitting layers, a plurality of second reflective layers, a plurality of first transparent conductive layers, and a composite optical film layer. The composite optical film layer is formed by stacking a plurality of optical film layers, and the composite optical film layer includes a plurality of bottom parts, a plurality of lateral parts, and a plurality of extension parts. A light outlet hole is defined between any two adjacent ones of the plurality of extension parts. A refractive index of each of the plurality of optical film layers in the composite optical film layer is gradually decreased from one of the plurality of optical film layers attached to a side wall surface to an outermost one of the plurality of optical film layers.

A Vertical Cavity Surface-Emitting Laser (VCSEL) has a body comprising a vertical stack of semiconductor layers one on top of the other, including: a current confinement region including an area of low resistance to current flow defined by an area of high resistance to current flow, and a first epitaxial sublayer disposed proximate to the current confinement region, the first epitaxial sublayer including a protrusion or a recess defines a main cavity, and the balance of the first epitaxial sublayer defines an outer cavity; wherein the protrusion or recess is defined by a physical step h that is predetermined according to the equation: qλ0−mλ1=n0h where λ0 is resonant wavelength of light in the main cavity, λ1 is resonant wavelength of light in the outer cavity, q is a half-integer positive number, n0 is effective refractive index in the main cavity, and m is a constant.

This distance image capturing apparatus comprises: an image capturing unit that includes a VCSEL, an optical unit, and an image capturing element; a main substrate that controls the image capturing unit; and a metal housing that accommodates therein the image capturing unit and the main substrate. The image capturing unit includes a light source substrate to which the VCSEL is attached, an element substrate to which the image capturing element is attached, and a metal support block that is thermally connected to the housing and supports the optical unit from below. The light source substrate and the element substrate are thermally connected to the support block.

The invention provides a vertical cavity surface emitting laser and a manufacturing method and a transverse current control method thereof, the manufacturing method forms a dielectric film and a lateral electrode layer around an optical active layer, constructs a lateral electrode layer-dielectric film-optical active layer structure, has a current control function similar to an MOS (Metal Oxide Semiconductor) structure, and improves the performance of the vertical cavity surface emitting laser. The transverse current of the VCSEL can be greatly inhibited, and the optical and electrical confinement range can be adjusted. According to the vertical cavity surface emitting laser, a three-electrode structure is adopted, and the newly added side electrode layer can replace or cooperate with an oxidation hole to increase control over transverse current. According to the transverse current control method, the voltage is applied to the side electrode layer, so that the current for driving the laser can be limited, non-radiative recombination is effectively reduced, the injection efficiency of the current is improved, in addition, the side mode intensity and the far-field divergence angle of emergent light can be inhibited through cooperation with the enlarged oxidation hole, and the injection efficiency of the laser is improved. And meanwhile, the problem of insufficient light emitting power caused by too small oxidation holes is avoided.

The invention belongs to the technical field of semiconductor photoelectric device manufacturing, and particularly relates to an epitaxial growth method of a P-type Bragg reflection layer, a vertical cavity surface emitting laser and an epitaxial growth method of the vertical cavity surface emitting laser. The P-type Bragg reflection layer provided by the invention is grown by adopting a metal organic compound chemical vapor deposition-in-situ reflection monitoring method, and comprises multiple layers of unit structures which are arranged in a laminated manner, each layer of unit structure sequentially comprises a carbon-doped GaAs layer, a first carbon-doped AlGaAs layer, a delta-doped layer and a second carbon-doped AlGaAs layer from bottom to top, the delta-doped layer is located at an optical standing wave node, and the second carbon-doped AlGaAs layer is located at an optical standing wave node. And the delta-doped layer is a third carbon-doped AlGaAs layer. According to the P-type Bragg reflection layer provided by the invention, the resistance of a P-DBR device can be remarkably reduced while high reflectivity is maintained, and the optimal balance of photoelectric properties is achieved through accurate control of a doping position.

An optoelectronic package for measuring distance, tip, and tilt of an object relative to a detector. The optoelectronic package comprises a carrier; a photodiode element (photodiode elements) located on the carrier and having a center opening; a vertical-cavity surface-emitting laser (VCSEL) located in the center opening and directing light rays toward the object; and an interference generating optical element positioned between the photodiode element and the object. Light passes through the optical element from the VCSEL creating a ring of measured light which reflects off the surface of the object and combines with a ring of reflecting reference light to produce interference fringes on the photodediode elements with varying light intensity, which correspond to displacement and angular tip and tilt of the surface of the object. The measurement of these variations will be interpreted by a computational element to produce a value of distance, tip, and tilt of the object.

A detection system for a vehicle includes an imaging device configured to capture an image of an interior surface of the vehicle. The illumination assembly includes an array of laser diodes, each configured to project illumination, each configured as at least one of a single mode laser or a vertical cavity surface emitting laser ("VCSEL"). An optical element is proximate to the laser diode array and includes a collimating element for directing illumination to form at least one spot of light. A processor is in communication with the imaging device and the illumination assembly. The processor is configured to transmit a signal to operate the laser diode array and process an image of the interior surface to detect at least one of a change in position of the at least one point or a change in speckle content.

The invention relates to a flexible design method of refractive index constraint in an overgrowth-based vertical cavity surface emitting laser. A vertical cavity surface emitting laser (VCSEL) has a body including a vertical stack of semiconductor layers one above the other, including a current confinement region including a region of low resistance to current flow defined by a region of high resistance to current flow, and a first epitaxial sub-layer disposed proximate to the current confinement region, comprising protrusions or depressions defines a main cavity, and the remainder of the first epitaxial sub-layer defines an outer cavity; wherein the protrusions or recesses are defined by a physical step h predetermined according to the following formula: q [lambda] 0-m [lambda] 1 = n0h, where [lambda] 0 is the resonant wavelength of light in the main cavity, [lambda] 1 is the resonant wavelength of light in the outer cavity, q is a positive half integer, n0 is the effective refractive index in the main cavity, and m is a constant.

The present invention relates to a light-emitting device and, more specifically, to a vertical-cavity surface-emitting laser comprising an oxide layer. Disclosed is the light-emitting device comprising: a first mirror layer; a second mirror layer arranged on the first mirror layer; a cavity layer which is arranged between the first mirror layer and the second mirror layer and which generates light; and a mesa that exposes side surfaces of the cavity layer and the second mirror layer.

This application relates to a vertical-cavity surface-emitting laser (VCSEL) array and integrated system. The array includes at least one laser, each laser comprising a substrate and at least one first unit located on the substrate. The first unit includes a laser emitting structure and a connection structure located above the laser emitting structure. The laser emitting structure has at least one emission aperture. The connection structure includes at least a first electrode and a conductive heat dissipation layer stacked sequentially. The first electrode and the emission aperture are disposed opposite to each other. The conductive heat dissipation layer covers the first electrode, and the orthogonal projection of the emission aperture on the substrate is located within the orthogonal projection of the conductive heat dissipation layer on the substrate. The VCSEL array and integrated system of this application enables the design of more compact optical communication modules and consumer electronics products with lower bandwidth density.

The invention provides a VCSEL (Vertical Cavity Surface Emitting Laser) multi-modal defect image enhancement method and a VCSEL multi-modal defect image enhancement system. The method comprises the following steps: acquiring multi-modal defect image data of a VCSEL; constructing and training an SRCNN image enhancement model; the SRCNN image enhancement model is used for recovering high-resolution details from a low-resolution multi-modal defect image by combining an electroluminescent imaging technology and utilizing an improved SRCNN image super-resolution algorithm; and inputting the multi-modal defect image data into a trained SRCNN image enhancement model to perform image enhancement on the multi-modal defect image data, and outputting high-resolution defect image data. According to the method, the EL imaging technology is combined, the improved SRCNN image super-resolution algorithm is utilized, high-resolution details are recovered from the low-resolution multi-mode defect image, the image quality is remarkably improved, and therefore the yield of VCSEL products is improved.

An optical wireless communication system including: a transmitter device having an array of Vertical-Cavity Surface-Emitting Lasers (VCSELs), wherein each VCSEL in the array is configured to emit a light beam in a different direction; and a receiver device having an array of Single Photon Avalanche Diodes (SPADs), wherein each SPAD in the array is configured to detect light from a different direction; a selective activation mechanism configured to activate a specific VCSEL and a specific SPAD based on their alignment to establish a communication link, without requiring physical alignment of the devices.