761 results about "Vertical-cavity surface-emitting laser" patented technology

The invention discloses a vertical cavity surface emitting laser and a preparation method thereof. The preparation method of the vertical cavity surface emitting laser comprises the following steps: growing a semiconductor epitaxial structure with a lower reflecting mirror layer, an active layer and an upper reflecting mirror layer which are sequentially arranged from bottom to top on a substrate to form a wafer; depositing an ohmic metal layer, and etching the semiconductor epitaxial structure until the lower reflector layer is exposed to form a plurality of grooves; performing ion implantation on the side wall and the bottom of each groove to form a plurality of insulating regions; the insulating region comprises a side wall insulating region in contact with the side wall of the groove and a bottom insulating region in contact with the bottom of the groove; the depth of the side wall insulation region is greater than that of the groove; the semiconductor epitaxial structure is jointly divided into a plurality of semiconductor units which are mutually isolated on the active layer by the grooves and the insulating regions; and each semiconductor unit comprises a lower reflecting mirror, an active region, an upper reflecting mirror and an ohmic electrode which are sequentially arranged from bottom to top. According to the embodiment of the invention, the robustness of the vertical cavity surface emitting laser can be improved.

The invention relates to a signal emission control method and device based on optical communication and a signal emission laser. The method comprises the following steps: acquiring output light intensity data of the vertical cavity surface emitting laser in a preset temperature range and a bias current range, and determining a bistable working characteristic curve; acquiring a vibration resonance gain signal; gaussian distribution transformation and target phase sampling are performed on the vibration resonance gain signal, and a signal nonlinear compensation model is established; applying a driving current pulse synchronous with communication data, symmetrically sampling the output signal subjected to transient response control at a rising edge and a falling edge, and constructing a signal quality evaluation vector; and inputting a support vector regression model, establishing a mapping relation between the light intensity characteristic parameter and the driving control parameter, and generating a real-time control signal of the laser. According to the invention, the self-adaptive accurate control of the vertical cavity surface emitting laser is realized, and the stable operation of the signal emitting laser under the temperature and bias current fluctuation condition is ensured.

The invention relates to a light spot uniformity optimization method and system for a high-precision VCSEL device, and the method comprises the following steps: carrying out the light field collection of a light-emitting surface of the VCSEL device, obtaining the intensity distribution of original light spots, analyzing the non-uniformity of each light-emitting unit, and extracting the non-uniformity characteristics of the light spots. And carrying out deviation cause analysis based on the characteristics, and identifying device structure deviation parameters. According to the method, an etching process is optimized, a corrected oxidized aperture configuration scheme is obtained, near-field light field simulation is carried out by adopting a finite difference time domain method, and optimized light field distribution is verified and predicted. And finally, adaptive compensation design is carried out on the Bragg reflector structure based on a prediction result, light field regulation and control are realized, target light spot uniformity distribution is finally obtained, and the problem that systematic analysis and feedback control on non-uniformity causes of a light emitting unit layer in a device are lacked in the prior art is solved. And local bright spots or dark areas are caused.

A vertical-cavity surface-emitting laser (VCSEL) may include a first mirror structure over a cavity region. The VCSEL may include a grating associated with polarizing light emitted by the VCSEL. The grating may be over the first mirror structure. The VCSEL may include a mode filter (MF) structure over the grating. The MF structure may comprise an MF layer in a first region of the MF structure to at least partially suppress a higher order transverse mode (HOM) of the light, the MF layer comprising a dielectric layer. The MF structure may include a second minor structure in at least a second region of the MF structure to increase reflectivity on a side of the VCSEL comprising the first minor structure.

The invention provides a low-cost and high-integration meteorological detection system for low-altitude meteorological service, and belongs to the technical field of meteorological detection. The low-cost and high-integration-level meteorological detection system for the low-altitude meteorological service comprises a plurality of small meteorological stations and MEMS sensors integrated with temperature, humidity, air pressure, wind speed, wind direction and the like. A plurality of small laser wind finding radars are based on an optical fiber laser and a VCSEL (Vertical Cavity Surface Emitting Laser) technology and adopt a modular design. And the data fusion module is used for fusing multi-source data of a ground station, a laser radar, a satellite and the like by adopting a four-dimensional variation assimilation algorithm to generate a 100-meter-resolution grid meteorological product. The technical bottleneck of traditional low-altitude meteorological detection is broken through, and a meteorological service solution is provided for the fields of urban fine management, navigation safety, intelligent agriculture and the like. The system has the characteristics of high cost performance, high flexibility and high resolution, and promotes low-altitude meteorological observation to be upgraded from sparse monitoring to global sensing.

The invention discloses a packaging method and device of a vertical cavity surface emitting laser, and belongs to the field of semiconductor laser chip packaging processes. The packaging heat dissipation cover is additionally arranged on the top of the VCSEL chip, the VCSEL chip is surrounded up and down by the packaging heat dissipation cover, the supporting connecting block and the bottom heat sink component, and the heat dissipation mode of the top of the device is adjusted from low-efficiency heat radiation to air to heat conduction through a high-heat-conductivity solid material. Compared with the prior art, the heat conduction capability of a medium near the center of a heat source can be effectively improved, and the blocking effect of a top DBR material on heat is remarkably reduced. In addition, the transverse component of heat flow at the top is further increased by using a chamfering structure in the through hole and a two-dimensional transparent heat conduction material, and the efficiency of the heat of the VCSEL chip flowing to the two sides of the top is improved.

The invention relates to the technical field of lasers, and discloses a vertical cavity surface emitting laser structure and a preparation method thereof. The preparation method comprises the steps that an epitaxial structure comprising a first reflector layer, a first limiting layer, an active layer, a second limiting layer and a second reflector layer is formed on the surface of one side of a substrate layer, and the epitaxial structure is provided with a light emitting area; an oxidation groove extending into the first reflector layer from the second reflector layer is formed in the light emitting area; forming an oxidation layer with an oxidation hole in the second reflector layer of the light emitting area; ion implantation is carried out on the epitaxial structure to form an ion implantation region and a current implantation region, the current implantation region surrounded by the ion implantation region is located in the light emitting region, and the projection of the current implantation region on the substrate layer covers the projection of the oxidation hole. On the premise that the oxide layer with the oxidation hole is formed, the ion injection region surrounding the current injection region and the oxidation hole is accurately and efficiently controlled to be formed in an ion injection mode, and the reliability, the bandwidth performance and the transmission rate of the laser structure can be effectively improved.

The invention provides a temperature control system and method, electronic equipment and a storage medium, and relates to the technical field of semiconductor laser temperature control. The temperature control system is used for the vertical-cavity surface-emitting laser, and comprises a temperature measurement assembly which is used for measuring the real-time temperature of the vertical-cavity surface-emitting laser and providing a feedback signal; the digital PID algorithm assembly is connected with the temperature measuring assembly and is used for determining a control signal according to the feedback signal and a set temperature; and the power driving assembly is connected with the digital PID algorithm assembly and is used for providing driving current according to the control signal so as to adjust the temperature of the vertical cavity surface emitting laser. According to the invention, a four-wire system wiring method is adopted to eliminate lead resistance errors, and a high-precision element is matched, so that the temperature detection precision reaches 2mK, and the accuracy is remarkably improved.

The invention provides a well drilling anti-interference communication system based on a VCSEL (Vertical Cavity Surface Emitting Laser), the VCSEL and a manufacturing method thereof, and the manufacturing method comprises the following steps: calculating the light field intensity distribution of a high-order transverse mode through an intrinsic mode expansion method and a Laguerre-Gaussian model based on the epitaxial structure parameters of a laser; determining a target area which begins to perform downward annular etching on the surface of the p-DBR layer, wherein the target area coincides with a light field intensity peak area of the high-order transverse mode; performing annular etching in the target area to form an annular groove, and etching at least seven pairs of p-DBR layers inwards in the groove; the communication system comprises a signal transmitting end arranged on the derrick side, and the signal transmitting end is provided with the vertical cavity surface emitting laser; the p-DBR region of the vertical cavity surface emitting laser is provided with an annular etching structure; the graded-index fluorinated plastic optical fiber is used as a transmission medium and is connected with the derrick side and the logging room side; and the optical signal receiving end is arranged at the logging room side and is used for receiving and converting the optical signal into an electric signal.

The invention relates to a Spin Exchange Relaxation-Free (SERF)-based magnetometer system (100) for detecting ultra- weak magnetic fields, particularly suited for bio¬ sensing applications such as MEG, MCG, and MRI. The system operates at room temperature and includes a VCSEL (101) emitting dual beams tuned to Rubidium-87 transitions, a microfabricated vapor cell (102) with LIAD-based heating (103), and an optical assembly (104) for polarization control. A detection unit (105) converts Faraday rotation into electrical signals, enhanced by lock-in amplification. Magnetic shielding (106), thermal management (107), and relaxation mitigation maintain SERF conditions. A calibration subsystem (109) and embedded machine learning module (110) optimize sensitivity in real time. The compact, cryogen-free architecture enables portable and wearable applications. The invention achieves femtotesla-level sensitivity while overcoming limitations of conventional SQUID-based systems, making it suitable for clinical and field deployments.

The invention relates to an electric injection quantum dot vertical cavity surface emitting laser and a preparation method thereof. The laser structure comprises a substrate, a bottom reflector, a first current expansion layer, a waveguide layer, an electron injection layer, an active layer, a hole injection layer, a second current expansion layer and a top reflector. A corresponding top reflector is arranged in an opening area in the waveguide layer and serves as a resonant cavity of the laser, and a light field is guided by the waveguide layer to be efficiently oscillated and amplified in the resonant cavity. In the preparation process, good lattice matching between the bottom reflector and the substrate is ensured through epitaxial growth, interface defects and stress are reduced, low-cost methods such as spraying, spin coating and ink-jet printing are used, operation is easy and convenient, and large-area preparation can be achieved. The laser realizes bottom light emission, optimizes current injection, improves light emission and heat dissipation performance, controls a resonant cavity light field to improve device performance, and has the advantages of low power consumption, high light beam collimation and the like.

The invention discloses a vertical cavity surface emitting laser. The vertical cavity surface emitting laser comprises a substrate, a plurality of arrays arranged on the substrate and a plurality of insulating grooves, the insulating grooves surround the array; each array comprises a plurality of light-emitting units and a plurality of oxidation grooves, each light-emitting unit comprises at least one oxidation limiting layer, and the oxidation grooves are arranged around at least one part of the periphery of the light-emitting units and expose the oxidation limiting layers; the array further comprises a plurality of insulation areas corresponding to at least part of the oxidation grooves. And the insulating regions are arranged around the side walls and the bottoms of the corresponding oxidation grooves. According to the embodiment of the invention, the breakdown risk of the oxidation groove can be reduced, and the reliability of the vertical-cavity surface-emitting laser is improved.

An emitter includes a substrate; a current-blocking distributed Bragg reflector (DBR) arranged on the substrate, wherein the current-blocking DBR includes a plurality of p-n junctions connected vertically in series to form a bidirectional current-blocking structure; a bottom contact layer arranged on the current-blocking DBR; a bottom DBR arranged on the bottom contact layer; a top DBR arranged on the bottom DBR; an active region configured to generate a laser light, wherein the active region is arranged between the bottom DBR and the top DBR; a top contact layer arranged on the top DBR; and an optical output arranged over the top DBR, wherein the emitter is configured to emit the laser light via the optical output.

A vertical cavity surface emitting laser diode (VCSEL) includes a substrate, a lower Bragg reflector (DBR) layer, an active region, an upper Bragg reflector (DBR) layer, and a current confinement layer. The lower DBR layer is on the substrate. The active region is on the lower DBR layer on the active region. The current confinement layer is inside or outside the active region. When the current confinement layer comprises a compound containing phosphorus, such as AlAsP or AlGaAsP, and the phosphorus (P) content is within a specific range, the insulation rate of the current confinement layer will not be excessively fast to the point of being difficult to control. Additionally, the reproducibility of the aperture in the current confinement layer between batches of the VCSEL production is improved. Furthermore, the divergence angle of the VCSEL can be further reduced, thereby significantly enhancing the sensing capabilities of Lidar or 3D sensing.

The invention discloses a thin film light-transmitting bead black light sensor ToF packaging structure which comprises a substrate, a vertical cavity surface emitting laser, an ASIC chip, black plastic packaging glue and light-transmitting beads. The vertical cavity surface emitting laser and the ASIC chip are arranged on the substrate and are electrically connected with the substrate through routing, and light-transmitting beads are arranged on a first emitting end of the vertical cavity surface emitting laser and a first receiving end of the ASIC chip; the black plastic packaging adhesive is packaged on the vertical cavity surface emitting laser, the ASIC chip and the light-transmitting beads, the tops of the two light-transmitting beads protrude out of the top surface of the black plastic packaging adhesive, and the black plastic packaging adhesive forms an isolation retaining wall between the vertical cavity surface emitting laser and the ASIC chip, so that light emitted by the vertical cavity surface emitting laser penetrates through the light-transmitting beads and then is emitted out. The ASIC chip receives the reflected light passing through the light-transmitting bead. The invention relates to the technical field of semiconductor packaging, and can solve the technical problems of a traditional transparent optical sensor packaging structure.

The invention discloses a VCSEL array and multi-core optical fiber high-efficiency coupling and aligning system, and belongs to the field of semiconductor lasers. The VCSEL array and multi-core optical fiber high-efficiency coupling system comprises a VCSEL array, a micro lens array and a multi-core optical fiber. A layer of microlens array is arranged between the VCSEL array and the multi-core optical fiber, and divergent light beams emitted by the VCSEL array are focused through the microlens array, so that the light beams can be respectively aligned with each fiber core of the multi-core optical fiber for incidence. The invention further discloses a VCSEL array and multi-core optical fiber alignment system, on the basis of the VCSEL array and multi-core optical fiber high-efficiency coupling system, the system further comprises a CCD camera, a high-magnification visual system and piezoelectric motors, the VCSEL array, the micro-lens array and the multi-core optical fiber are fixed in the three piezoelectric motors respectively, the plane where the piezoelectric motors are located is an x-y plane, and the plane where the piezoelectric motors are located is an x-y plane. A CCD camera is placed at the position parallel to the x-y plane, image information of the VCSEL array, the micro-lens array and the multi-core optical fiber is captured, and machine vision automatic alignment is carried out.

The invention relates to the technical field of semiconductor photoelectrons, and discloses a vertical-cavity surface-emitting laser with an inverted structure and a preparation method of the vertical-cavity surface-emitting laser. The vertical cavity surface emitting laser with the inverted structure comprises a heterogeneous substrate, wherein a heat dissipation functional layer, a metal adhesion layer and a metal bonding layer are arranged on the surface of the heterogeneous substrate from bottom to top; the epitaxial structure comprises a p-type electrode, an ITO current expansion layer, a SiO2 current limiting layer, a first dielectric DBR layer, a p-type GaN layer, an electron blocking layer, a quantum well active region, an n-type GaN layer, a second dielectric DBR layer and an n-type electrode from bottom to top; and the p-type electrode is positioned at the bottom of the epitaxial structure and is bonded with the metal bonding layer to form an inverted structure. According to the vertical cavity surface emitting laser with the inverted structure provided by the invention, the heat dissipation function layer and the inverted structure design effectively improve the heat dissipation capability and the current uniformity of the device, and the service life, the performance stability and the reliability of the device are remarkably improved.

The invention discloses a high-power vertical cavity surface emitting laser and a preparation method thereof. The high-power vertical cavity surface emitting laser comprises a substrate; the semiconductor epitaxial layer is positioned on one side of the substrate; the semiconductor epitaxial layer comprises at least one first region and a second region arranged around the first region; the semiconductor epitaxial layer in the second region is etched to form a groove; the filling layer is filled in the groove; the dielectric layer comprises a first dielectric layer and is positioned on one side, far away from the substrate, of the semiconductor epitaxial layer; wherein the dielectric layer comprises a first opening; the vertical projection of the first opening on the semiconductor epitaxial layer is located in the first region; the upper electrode is positioned on one side, far away from the substrate, of the first dielectric layer; the upper electrode is electrically connected with the light-emitting structure through the first opening, and the upper electrode located in the second area is separated from the filling layer through the first dielectric layer. According to the technical scheme provided by the invention, the flatness of the device is ensured, and the performance and reliability of the device are improved.

The invention discloses a refractive index sensing chip of an integrated BIC metasurface laser, which integrates a vertical cavity surface emitting laser (VCSEL) and a novel ball road pattern metasurface designed based on a BIC theory, and designs a high-sensitivity refractive index sensor by using a continuous domain bound state theory. The ball road pattern structure is prepared through electron beam lithography and a gold evaporation-stripping process, has uniform nanoscale patterns, and can realize high refractive index sensitivity. The chip can be used in the field of biosensing. By optimizing structural parameters and a preparation process, the optical sensing chip with high integration level and high sensitivity is realized, and a new solution is provided for unmarked biological detection.

The invention relates to the technical field of semiconductor lasers, and discloses a high-temperature-adaptability VCSEL (Vertical Cavity Surface Emitting Laser) light source which comprises two VCSELs connected in parallel and can respectively obtain high-efficiency light output in low-temperature and high-temperature environments. Wherein the peak value of material gain of an active region of the VCSEL which normally works at low temperature at room temperature is located in the long wave direction of a resonant cavity mode; the peak value of the VCSEL material gain normally working at high temperature is located in the short wave direction of the cavity mode, so that the cavity mode moves towards the peak value of the material gain at low temperature and high temperature to obtain high mode gain. Two paths of lasers emitted by the VCSELs are combined into one path through the optical fiber beam combiner, so that the device can realize stable light output within a large temperature change range, and the temperature monitoring and prediction layer and the adaptive layer are arranged to realize temperature monitoring and prediction and intelligent adaptive adjustment.

The invention relates to the technical field of semiconductor lasers, in particular to a vertical cavity surface emitting laser, a semiconductor laser and a preparation method. The vertical cavity surface emitting laser comprises a substrate, an N electrode, an N-type DBR part, an active region layer, a P-type DBR part and a P electrode, the substrate, the N-type DBR part, the active region layer, the P-type DBR part and the P electrode are sequentially arranged in a stacked mode from bottom to top, and the N electrode is arranged on the substrate; and the embossment structure is arranged on the light emitting surface of the laser, and the embossment structure is arranged corresponding to the position of the oxidation hole. According to the embodiment, the relief structure is arranged on the light emitting surface of the VCSEL and serves as the transverse coupling cavity, so that photons form a photon-photon resonance (PPR) effect in the transverse coupling cavity, namely, the modulation frequency / modulation bandwidth of the VCSEL is improved through the transverse coupling cavity.

The invention relates to the field of semiconductor lasers, and discloses a vertical cavity surface emitting laser based on a composite metal substrate and photonic crystals, which comprises a CIC composite metal substrate, a GaAs buffer layer, a lower n-type DBR, an n-type contact layer, a multi-junction cascade active region, a p-type contact layer and an upper p-type DBR which are sequentially arranged from bottom to top, a plurality of two-dimensional photonic crystals are etched in the light emitting direction of the upper layer p-type DBR; the thermal stability and reliability of the device under a high-power continuous working condition are effectively improved, stable single-mode output is realized, light field limitation is enhanced, light beam quality is improved, array and on-chip integration are facilitated, the problem of low efficiency of a 650nm red light laser in the aspect of single-mode output of a base VCSEL is effectively solved, and the device has a wide application prospect. The method has a good application prospect and a wide application range.

An optical subsystem with flat lenses for multimode transceivers is provided. The optical subsystem includes a photonic integrated circuit (PIC). The optical subsystem also includes a vertical cavity surface emitting laser (VCSEL) disposed on the PIC, a photodetector disposed on the PIC, a transmit multimode fiber (TX-MMF) disposed on the PIC, and a receiver multimode fiber (RX-MMF) disposed on the PIC. The PIC includes a substrate, an oxide layer disposed above the substrate, and a plurality of metalenses disposed in the oxide layer. The substrate includes a polymer region and a mirror disposed at a base of the polymer region.

The invention discloses a vertical cavity surface emitting laser, a preparation method and a laser light emitting module, the laser comprises a laser body, the surface of the laser body is provided with an annular insulation structure, and one side of the laser body forms a circular truncated cone structure; the laser body comprises a limiting layer which is located in the circular truncated cone structure. The limiting layer comprises limiting through holes, and the diameter range of the limiting through holes is 0.5-6 microns; the ohmic contact ring is arranged on the surface of the circular truncated cone structure; the first electrode layer is arranged on the side, away from the laser body, of the ohmic contact ring, the first electrode layer is connected with the ohmic contact ring through the first opening, the number difference between carriers distributed in the center of the light-emitting hole and carriers at the edge of the light-emitting hole is reduced, and therefore the carriers in the light-emitting hole are distributed more evenly; according to the array chip, black holes are prevented from being formed in the center of emergent light spots, Gaussian light spots can be formed easily, and meanwhile the heat resistance, direct current injection resistance and large current injection resistance of the array chip can be improved.

The invention relates to the technical field of lasers, in particular to a vertical-cavity surface-emitting laser and a preparation method thereof, and the vertical-cavity surface-emitting laser comprises a substrate layer, an N-type DBR structure, a first spacing layer, an active layer, a second spacing layer and a P-type DBR structure which are stacked in sequence; wherein the P-type DBR structure is formed by alternately arranging a high-refractive-index P-type semiconductor layer and a low-refractive-index P-type semiconductor layer for a plurality of cycles, and the low-refractive-index P-type semiconductor layer is a P-type semiconductor layer containing an Al component; a low-refractive-index P-type semiconductor layer adjacent to the second spacing layer in the P-type DBR structure is used as a first oxidation limiting layer, and the molar fraction of Al component in the first oxidation limiting layer before oxidation is greater than 0.98. According to the invention, the single transverse mode output characteristic of the vertical cavity surface emitting laser under high power can be improved at least.

In some implementations, a vertical cavity surface emitting laser (VCSEL) array may include a substrate. In some implementations, the VCSEL array may include a set of cathodes disposed on the substrate in a first direction, wherein a cathode, of the set of cathodes, is defined by a serpentine shape. In some implementations, the VCSEL array may include a set of anodes disposed on the substrate in a second direction, wherein an anode, of the set of anodes, is defined by the serpentine shape.

The invention discloses a line light source generation device, and relates to the technical field of laser equipment. The linear light source generating device comprises a vertical cavity surface emitting laser light source and a light guide column, the two ends of the light guide column are provided with an incidence end face and a reflection end face respectively, the peripheral face of the light guide column comprises a reflection side face and a light emitting side face, and the incidence end face and the reflection end face both incline to the axis of the light guide column. The incident end face of the light guide column is obliquely arranged, so that light beams emitted by the vertical cavity surface emitting laser light source are refracted when entering the light guide column from the incident end face, light rays in the light guide column have a complex and zigzag propagation path, the light emitting uniformity of the light emitting side face can be improved, and dark areas and bright spots are reduced; moreover, light loss can be reduced, and light output power is improved.

The disclosed method that may be used for eye tracking includes measuring, by a controller, a distance to an object (316) based on a combination of polarization information of detected light and time-of-flight information of the detected light, wherein the detected light results from at least one of scattering or reflection of a light beam from the object (316). The disclosed method additionally includes performing, by an artificial reality system that includes the controller, one or more user interaction procedures based on information that includes the measured distance to the object (316). A system includes a laser scanning polarization imager including and a detector system (302) including a plurality of photodetectors 304. Each photodetector (306) includes a polarizer (308) having a particular polarization direction oriented at zero, 45, 90 and 135 degrees. A light source (310) may include a vertical cavity surface emitting laser (VCSEL) to emit a light beam (312). A reflector (314), such as a MEMS scanner, directs the light beam (312) onto the object (316), such as an eye. Light (318), e.g., specular and / or diffusive, is reflected and / or scattered from the object (316) and detected by the detector system (302). A controller measures a distance to the object (316) based on this detected light (318). Additionally, the controller measures position and / or size of one or more regions (320) of the object, such as a pupil and / or cornea.

A self-mixing interferometric laser sensor (100) comprises a vertical cavity surface emitting laser, VCSEL, (10) configured to emit laser radiation (9) with a linear polarization (90) through an emission surface (14), a first photodetector (21) configured to monitor a first part (91) of the laser radiation (9) and to output a first signal (1), a first linear polarizer (23) arranged in front of the first photodetector (21) such that the first part (91) of the laser radiation (9) passes through the linear polarizer (23) before reaching the first photodetector (21), a second photodetector (22) configured to monitor a second part (92) of the laser radiation (9) and to output a second signal (2), a second linear polarizer (24) arranged in front of the second photodetector (22) such that the second part (92) of the laser radiation (9) passes through the second linear polarizer (24) before reaching the second photodetector (22), wherein the first linear polarizer (23) is oriented at a first angle (71) with respect to the linear polarization (90) of the VCSEL (10), wherein the second linear polarizer (24) is oriented at a second angle (72) with respect to the linear polarization (90) of the VCSEL (10), wherein the first angle (71) is substantially +45° and the second angle (72) is substantially -45°.

The invention provides a light generating system (1000) comprising n first vertical cavity surface emitting lasers (110) and a control system (300), wherein n≥1, wherein each of the n first vertical cavity surface emitting lasers (110) is configured to generate first laser light (111) changing between at least two centroid wavelengths (λnc,1, λnc,2) having a wavelength difference of at least 10 nm, with a changing frequency of at least 50 Hz; wherein the control system (300) is configured to control the n first vertical cavity surface emitting lasers (110) such that system light (1001) is generated comprising the first laser light (111) of at least one of the n first vertical cavity surface emitting lasers (110), and wherein the control system (300) is configured to control a spectral power distribution of the system light (1001), wherein the system light (1001) is white light having a correlated color temperature in a range from 1800 K to 8000 K and a color rendering index of at least 70.