146 results about "Distributed Bragg reflector" patented technology

A display device according to an embodiment includes a lower substrate, a first bonding electrode disposed on the lower substrate, a first light emitting element disposed on the first bonding electrode, a second bonding electrode disposed on the first light emitting element, and a second light emitting element disposed on the second bonding electrode, the second bonding electrode includes a first distributed Bragg reflector including at least one pair of a first transparent conductive layer and a second transparent conductive layer having different refractive indices that are alternately stacked.

A semiconductor laser includes a distributed feedback (DFB) region including an active layer and a uniform grating and two distributed Bragg reflector (DBR) region including an core layer and a uniform grating and optically coupled to respective ends of the DFB region and lengths of the DFB region and the DBR regions in a waveguide direction are set so that a photon-photon resonance frequency is in a range from 40 GHz to 50 GHz when an operating temperature is between 25 degrees and 75 degrees. The semiconductor laser optimizes a PPR effect and enables maximizing a modulation bandwidth.

The invention relates to a semiconductor device, e.g. for the emission or absorption of light, preferably in the deep ultraviolet (DUV) range. The device, e.g. a resonant cavity light emitting diode (RCLED) or a laser diode, is formed from: a substrate layer (302), preferably comprising a distributed Bragg reflector (DBR); a graphitic layer (304); and at least one semiconductor structure (310), preferably a wire or a pyramid, grown on the graphitic layer, with or without the use of a mask layer (306). The semiconductor structure is constructed from at least one III-V semiconductor n-type doped region (316) and a hexagonal boron-nitride (hBN) region (312), preferably being p-type doped hBN.

A dynamically tunable optical mirror named as a resonant cavity switching (RCS) device and a refractive index modulating (RIM) device are disclosed. The RCS device is comprising a nanoporous piezoelectric III-nitride material layer, such as GaN, AlN, AlScN, AlGaScN or their alloys sandwiched between a high-reflectivity distributed Bragg reflector (DBR) and a lower-reflectivity output DBR. The RIM devise is comprising the nanoporous III-nitride material layer. The nanoporous layer, patterned with interdigital transducers (IDTs), is actuated via surface acoustic waves (SAWs) or electric fields to induce rapid, reversible modulation of its effective refractive index. This enables sub-nanosecond switching between resonant and off-resonant optical states, facilitating efficient energy extraction, optical pulse carving, or phase control.

A display device includes a light-emitting substrate, a counter substrate, multiple color conversion layers and, a patterned distributed Bragg reflector. The counter substrate is disposed opposite to the light-emitting substrate, and has multiple sub-pixel regions. Each of the sub-pixel regions has a sub-pixel width. The color conversion layers are disposed between the light-emitting substrate and the counter substrate. The patterned distributed Bragg reflector is disposed on one side of the color conversion layers, and has multiple openings. Each of the openings has an opening width greater than or equal to 1 μm and less than the sub-pixel width.

This invention provides a semiconductor structure and its manufacturing method. The semiconductor structure includes a transparent substrate, an epitaxial structure, and a distributed Bragg reflector structure. The epitaxial structure is disposed on one side of the transparent substrate, and the distributed Bragg reflector structure is disposed on the back side of the transparent substrate opposite to the epitaxial structure. Visible light can substantially pass through the epitaxial structure, the transparent substrate, and the distributed Bragg reflector structure in a substantial sequence, but other light rays besides visible light can be substantially reflected back into the transparent substrate by the distributed Bragg reflector structure.

Optoelectronic light emitting devices are provided with directly bonded circuitry, such as control or driver circuitry. The optoelectronic light emitting devices incorporate distributed Bragg reflector (DBR) layers that can be tuned to reflect the light of a particular wavelength, and that facilitate direct bonding and electrical contact between optoelectronic light emitting device substrates (wafers or dies) and control circuitry. In some embodiments the DBR layers provide direct bonding interfaces, such as hybrid bonding surfaces.

[Object] To provide a vertical cavity surface emitting laser device and a vertical cavity surface emitting laser device array that use a GaAs substrate and have excellent light emission efficiency and reliability.[Solving Means] A vertical cavity surface emitting laser device according to the present technology includes: a substrate; and a light-emitting unit. The substrate is formed of InxGa1-xAs (x is 0.005 or more and 0.015 or less) and has a carrier concentration of less than 5×1017 / cm3. The light-emitting unit includes a first distributed Bragg reflector (DBR) that is formed on the substrate and reflects light having a specific wavelength, a second DBR that reflects light having the wavelength, and an active region that is disposed between the first DBR and the second DBR and generates light emission due to carrier recombination.

The application relates to a surface enhanced Raman scattering (SERS) substrate, a preparation method and application thereof, and belongs to the technical field of Raman spectrum detection. The substrate comprises, from bottom to top, a substrate layer, a distributed Bragg reflector, a chalcogen phase change material functional layer and a nanoscale metal structure layer. The distributed Bragg reflector is composed of a periodic structure stack of medium materials with different refractive indexes. The distributed Bragg reflector is coupled with the nanoscale metal structure layer to excite a Tamm state. The chalcogen phase change material functional layer can realize reversible regulation of amorphous state and crystalline state under external light excitation, changes the Tamm state resonance wavelength to regulate the SERS enhancement effect. The application realizes high-sensitivity detection through double enhancement of the Tamm state and localized surface plasmon resonance, has the characteristics of non-volatility, reconfigurability, high reproducibility and design flexibility, is convenient to operate, stable in performance, and is suitable for fields of chemical biological sensing, laboratory chip systems and optical encryption.

The invention relates to the technical field of semiconductor display, and discloses a Micro-LED micro display chip and a manufacturing process thereof. A bonding metal layer is arranged at the top of the lower substrate; a metal reflector is arranged at the top of the bonding metal layer; a distributed Bragg reflector is arranged at the top of the metal reflector; a first indium tin oxide layer is laid on the top of the distributed Bragg reflector; an LED epitaxial assembly is arranged at the top of the first indium tin oxide layer; and a second indium tin oxide layer is laid on the other side of the LED epitaxial assembly. The middle parts of the metal reflector, the distributed Bragg reflector, the first indium tin oxide layer and the LED epitaxial assembly are respectively provided with an optical resonance region and an MESA region. By arranging the composite reflection structure and the LED epitaxial assembly to form an optical resonant cavity, light emission in the vertical direction is enhanced, and the light output power of the chip is remarkably improved; meanwhile, the passivation layer on the side wall effectively inhibits the surface leakage current.

The invention relates to the technical field of light-emitting diodes, and discloses a light-emitting diode based on a selected area self-assembly nanostructure and a preparation method of the light-emitting diode. A main buffer layer disposed on one side surface of the substrate layer; the distributed Bragg reflector structure comprises a plurality of porous n-type doped layers and a plurality of n-type doped layers, and the plurality of porous n-type doped layers and the plurality of n-type doped layers are alternately arranged from bottom to top; the silicon dioxide dielectric mask layer is arranged on the surface of one side, far away from the main buffer layer, of the n-type doping layer on the uppermost layer, a plurality of windows arranged in an array mode are formed in the silicon dioxide dielectric mask layer, and the windows expose partial area of the n-type doping layer on the uppermost layer; the plurality of hexagonal pyramid structures are in one-to-one correspondence with the plurality of windows; the active layer is arranged on the semi-polar surfaces of the plurality of hexagonal pyramid structures and is used for emitting red light; and the p-type doped layer is arranged on the surface of one side, far away from the hexagonal pyramid structure, of the active layer. According to the invention, the mismatched stress can be relaxed, and the indium component is improved.

A light-emitting device includes a first electrode, a second electrode facing the first electrode, and an interlayer disposed between the first electrode and the second electrode. The interlayer includes an emission layer, and a distributed Bragg reflector (DBR) layer in which a first layer and a second layer are alternately stacked. A refractive index of the first layer is different from a refractive index of the second layer.

An LED device comprises a mesa comprising semiconductor layers, the semiconductor layers including an N-type layer, an active layer, and a P-type layer, the mesa having a top surface and at least one side wall, the at least one side wall defining a trench have a bottom surface. A transparent conductive layer is on at least one side wall and in the trench. A cathode layer is in the trench on the transparent conductive layer. A p-type contact is on the top surface of the mesa. In some embodiments, a spacer layer is formed between the transparent conductive layer and the cathode layer. In other embodiments, a distributed Bragg reflector is formed between the transparent conductive layer and the cathode layer.

The application provides a strong microcavity resonance enhanced infrared detector and a preparation method thereof, and belongs to the technical field of infrared detectors. The strong microcavity resonance enhanced infrared detector comprises a readout circuit located at a bottom layer; a distributed Bragg reflector located above the readout circuit, which has a plurality of indium columns with a length direction along a thickness direction of the distributed Bragg reflector; an infrared photosensitive chip located above the distributed Bragg reflector, which is interconnected with the readout circuit through the indium columns; and a passivation layer located above the infrared photosensitive chip; wherein a resonance cavity is formed between an upper surface of the distributed Bragg reflector and a lower surface of the passivation layer to perform resonance enhancement on target infrared light to be detected. The application can improve the quantum efficiency of the infrared detector, improve the effective conduction rate and reliability of the flip-chip welding of the indium columns, and improve the performance of the infrared detector.

The invention discloses a preparation method of a flexible distributed Bragg reflector, relates to the technical field of thin film preparation, and aims to solve the problem of poor reflectivity performance of a distributed Bragg reflector in the prior art. The method comprises the following steps: placing a substrate in a reaction cavity, wherein the substrate is polyethylene glycol terephthalate; forming an aluminum oxide film layer on the substrate by adopting an atomic layer deposition method and taking trimethyl aluminum and water as precursors; forming a hafnium oxide thin film layer on the aluminum oxide thin film layer by adopting an atomic layer deposition method and taking hafnium tetra-dimethylamino and water as precursors; based on the aluminum oxide thin film layer and the hafnium oxide thin film layer, N thin film pairs are obtained through deposition; n is a positive integer greater than or equal to 1; one aluminum oxide film layer and one hafnium oxide film layer form a film pair; and determining the N thin film pairs as flexible distributed Bragg reflectors. According to the preparation method, the reflectivity performance and the application performance of the distributed Bragg reflector are improved.

The invention relates to the technical field of Mini LED display, in particular to a sub-millimeter light-emitting diode and a preparation method thereof, and the method comprises the following steps: sequentially arranging a distributed Bragg reflector, a diffusion layer, a quantum dot layer and an organic silicon protection layer on a substrate covered with a pyrolysis film; carrying out wafer expansion on the GaN chip to be arranged at a specific distance through a blue film, and carrying out alignment bonding on the GaN chip and the substrate coated with the organic silicon protection layer; filling white wall glue between the channels of the GaN chips, and etching the division retaining walls, the organic silicon protection layer, the quantum dot layer, the diffusion layer and the DBR layer between the GaN chips to form the channels; a silicon nitride layer is deposited on the surface of the side wall of the channel through ALD or PECVD, and then the sub-millimeter light-emitting diode is obtained, packaging protection of the quantum dot layer is achieved by adopting an inorganic-organic material composite alternating mode, a strong barrier effect on water and oxygen is achieved, and high performance and high reliability of a device are guaranteed.

In an example, the present invention provides a laser system. The laser system has a source laser (e.g., CBC) coupled to first mirror device opposing a second mirror device and configured to generate a resonating laser beam between the first mirror and the second mirror. In an example, the system has a piezoelectric device configured to the second mirror device and characterized by a refractive e index such that one or more voids is changed by applying an energy to the piezo electric device to cause a change in a value of the refractive index, e.g., by more than 0.0001, to allow the resonating laser beam or a portion of the resonating laser to traverse through a portion of the second mirror device.

A microcavity pixel array device and method of manufacture having a shared multi-DBR system configured to cover a broad spectral bandwidth range. A wide emission band is achieved by depositing a first DBR on top of an OLED array and subsequently depositing a second DBR on top of the first DBR, where each DBR has a unique design. The multiple DBRs cover a wider spectral bandwidth range than a single DBR, and therefore almost total reflection is achieved for a series of OLEDs designed at different color wavelengths.

The invention relates to a gradient metal oxide layer in a vertical cavity surface emitting laser. Disclosed is a vertical cavity surface emitting laser (VCSEL) comprising a stack of semiconductor layers comprising: a bottom distributed Bragg reflector (DBR); a cavity layer; a current limiting layer; and a top DBR. The top DBR includes a plurality of pairs of alternating layers having different refractive indices, where a subset of the plurality of pairs of alternating layers includes alternating layers of decreasing concentration of at least one metal from a lower layer of the top DBR disposed proximate to the cavity layer to an upper layer of the top DBR disposed away from the cavity layer. A subset of a plurality of pairs of alternating layers having a decreasing concentration of at least one metal from a lower layer of the top DBR to an upper layer of the top DBR has a decreasing oxidation depth from a side surface of the top DBR. Methods of forming the VCSEL are also disclosed herein.

The utility model discloses a near-infrared medical area light source. The medical area light source comprises a vertical cavity surface emitting laser chip, a packaging substrate, a radiator, a fan and an optical assembly, the vertical cavity surface emitting laser chip comprises an upper distributed Bragg reflector (P-DBR), an active region and a lower distributed Bragg reflector (N-DBR), the vertical cavity surface emitting laser array emits light in a top emitting mode, the emitted laser beam is a circular light spot, an angle of about 12 + / -3 degrees is formed between the outer edge of the light beam and the perpendicular bisector of the chip, and the central wavelength of the light emitted by the chip is 810nm, 850nm or 940nm; near-infrared light chips which are used for indicating the working state of a light source and have the wavelength of red light or emit weak visible light are arranged at certain positions of the vertical cavity surface emission near-infrared laser chip array. The chip for indicating the working state is placed at the edge or the center of the pattern; one or more layers of diffusion plates are arranged above the near-infrared chip, and uniform near-infrared light emission can be obtained above the diffusion plates.

Provided is an optical modulator for amplifying intensity of incident light and modulating a phase of the incident light. The optical modulator includes a first distributed Bragg reflector (DBR) layer having a first reflectivity and including at least two first refractive index layers having different refractive indexes from each other and repeatedly alternately stacked, a second DBR layer having a second reflectivity and including at least two second refractive index layers having different refractive indexes from each other and repeatedly alternately stacked, and an active layer disposed between the first DBR layer and the second DBR layer and including a quantum well structure.

The invention provides a low-threshold continuous wave pumping vertical cavity surface emitting single-mode laser and a preparation method thereof. The low-threshold continuous wave pumping vertical cavity surface emitting single-mode laser based on the colloidal quantum dots comprises an optical substrate; the bottom distributed Bragg reflector is arranged on the optical substrate; the colloidal quantum dot active gain layer is arranged on the bottom distributed Bragg reflector; and the top distributed Bragg reflector is arranged on the colloidal quantum dot active gain layer. The low-threshold continuous wave pumping vertical cavity surface emitting single-mode laser and the preparation method thereof have the advantages that the operation is simple, convenient and efficient, low-threshold and high-stability continuous laser output is realized, and the blank of a continuous laser based on colloidal quantum dots in the prior art is effectively filled up.

A pixel for an image sensor is disclosed that includes a photodiode, a thin-film layer and a reflective layer. The photodiode includes a first side and a second side that is opposite the first side, and receives incident light on the first side. The thin-film layer is formed on the first side of the photodiode and provides a unidirectional phase-shift to light passing from the photodiode to the thin-film layer. The thin-film layer has a refractive index that less than a refractive index of material forming the photodiode. The unidirectional phase-shift may be a unidirectional π phase shift at a target near-infrared light wavelength. The reflective layer is formed on the second side of the photodiode and reflects light passing from the photodiode to the reflective layer toward the first side of the photodiode. The reflective layer may be a thin-film layer, a Distributed Bragg Reflector layer, or a metal.

The invention relates to the technical field of semiconductor devices, and discloses a multi-wavelength vertical cavity surface emitting laser and a preparation method thereof. The laser comprises a substrate, a lower distributed Bragg reflector and a laser layer which are arranged in sequence, the laser layer comprises a plurality of laser units separated by isolation areas, and each laser unit comprises a hole array with point defects; an insulating layer is arranged between the grating layer and the laser layer, the grating layer comprises a plurality of grating structures, and each grating structure is arranged at the top of one laser unit and covers the corresponding hole array; each annular electrode is arranged on the periphery of the corresponding grating structure in a sleeving mode, a gap is formed between the inner ring of each annular electrode and the corresponding grating structure, and each annular electrode and the corresponding common electrode form a loop independently. The multi-wavelength vertical cavity surface emitting laser can output a plurality of lasers which are stable in wavelength, stable in polarization and capable of being tuned independently in parallel.

A light emitting diode chip including a light emitting structure and a distributed Bragg reflector (DBR) having first, second, and third regions and including first material layers having a low index of refraction and second material layers having a high index of refraction, in which the first material layers include a first group having an optical thickness greater than 0.25λ+10%, a second group having an optical thickness in a range of 0.25λ−10% to 0.25λ+10%, and a third group having an optical thickness less than 0.25λ−10%, the first region has alternately disposed first and second groups, the second region has the third group, the first material layers in the third region have a first material layer having an optical thickness less than 0.25λ and greater than 0.25λ, the second material layers have a smaller average optical thickness than the first group of the first material layers.

An example optical device may have a surface-emitting laser structure that includes an active region configured to generate output light, a first distributed Bragg reflector (DBR) disposed below the active region, a second distributed Bragg reflector (DBR) disposed above the active region, a modulation structure that includes electroabsorption material, configured to modulate the output light in response to an applied bias, wherein the modulation structure is disposed within or adjacent to at least one of the first DBR and the second DBR. The electroabsorption material may include graphene or graphene-based composite material. An example method for modulating the output light may include generating a continuous-wave (CW) light in the active region, and then modulating the CW light by the modulation structure, via a bias-dependent absorption provided by the electroabsorption material.

According to the invention, the VCSEL array has two or more VCSELs which are arranged on a common substrate and each have a particularly identical epitaxial structure with a first distributed Bragg reflector (DBR), an active region and a second distributed Bragg reflector (DBR), the VCSEL array being arranged such that the wavelengths of two of the VCSELs differ by at least 0.003 nm and at most 5 nm.

The invention discloses a vertical-cavity surface-emitting laser structure and a preparation method thereof, and relates to the technical field of semiconductor optoelectronic devices, and the vertical-cavity surface-emitting laser structure comprises a substrate, a first distributed Bragg reflector, an n-type layer, a multi-quantum well layer, an electron blocking layer, a p-type layer, an n-type semiconductor limiting layer, an insulation current limiting layer, and a current expansion layer. A second distributed Bragg reflector and an electrode; according to the invention, the n-type semiconductor limiting layer with a larger forbidden bandwidth is introduced into the p-type layer below the insulating current limiting layer, and a heterojunction barrier and a built-in electric field formed by the n-type semiconductor limiting layer and the p-type layer are utilized to prevent transverse leakage of carriers, so that the loss of the carriers in a non-active region is reduced; therefore, the output light power of the laser is improved and the threshold current is reduced.

A color filter, wherein the color filter includes: a distributed Bragg reflector having a reflectance above a reflectance threshold in a first predetermined wavelength range; an intermediate layer arranged on the distributed Bragg reflector; a metasurface layer arranged on the intermediate layer; and wherein a configuration of the color filter, determined by design optimization, is such that the color filter has a transmittance spectrum with a peak in a second predetermined wavelength range that has a maximum at a predetermined wavelength, wherein the transmittance at the maximum exceeds a transmittance threshold.

The invention provides a tunnel junction type vertical cavity surface emitting laser structure and a forming method thereof, the tunnel junction type vertical cavity surface emitting laser structure comprises a substrate on which a first distributed Bragg reflector layer, an active layer and an etching stop layer which are sequentially stacked from bottom to top are formed, and the etching stop layer contains arsenic element; the first tunnel junction layer is formed on the etching stop layer and exposes part of the top surface of the etching stop layer, the second tunnel junction layer is formed on the first tunnel junction layer, and the second tunnel junction layer contains phosphorus; the second distributed Bragg reflector layer covers the second tunnel junction layer and extends to cover the exposed top surface of the etch stop layer. Because the second tunnel junction layer contains phosphorus, the light absorption of the second tunnel junction layer to the working wavelength can be reduced, thereby improving the output power of the device and reducing the threshold current. In addition, since the etching stop layer contains the arsenic element, the film layer quality of the second distributed Bragg reflector layer can be improved.