21 results about "Distributed Bragg reflector" patented technology

A pixel for an image sensor is disclosed that includes a photodiode, a thin-film layer and a reflective layer. The photodiode includes a first side and a second side that is opposite the first side, and receives incident light on the first side. The thin-film layer is formed on the first side of the photodiode and provides a unidirectional phase-shift to light passing from the photodiode to the thin-film layer. The thin-film layer has a refractive index that less than a refractive index of material forming the photodiode. The unidirectional phase-shift may be a unidirectional π phase shift at a target near-infrared light wavelength. The reflective layer is formed on the second side of the photodiode and reflects light passing from the photodiode to the reflective layer toward the first side of the photodiode. The reflective layer may be a thin-film layer, a Distributed Bragg Reflector layer, or a metal.

An example optical device may have a surface-emitting laser structure that includes an active region configured to generate output light, a first distributed Bragg reflector (DBR) disposed below the active region, a second distributed Bragg reflector (DBR) disposed above the active region, a modulation structure that includes electroabsorption material, configured to modulate the output light in response to an applied bias, wherein the modulation structure is disposed within or adjacent to at least one of the first DBR and the second DBR. The electroabsorption material may include graphene or graphene-based composite material. An example method for modulating the output light may include generating a continuous-wave (CW) light in the active region, and then modulating the CW light by the modulation structure, via a bias-dependent absorption provided by the electroabsorption material.

Some implementations described herein may provide an optical device. The optical device may include an optical emitter and an optical element aligned to the optical emitter. The optical element may include an oxidation aperture, one or more distributed Bragg reflectors (DBRs) disposed on the oxidation aperture, and a stacked periodic grating structure disposed on the one or more DBRs. The stacked periodic grating structure may include a set of layers. The set of layers may include alternating layers of a first material and a second material. The stacked periodic grating structure may have a selected period, depth, and fill factor that are selected to achieve greater than a threshold level of optical field confinement in a transverse direction of an optical field emitted by the optical emitter.

A distributed Bragg reflector (DBR) according to some embodiments of the present invention may include a substrate comprising silicon and a stacked structure on the substrate. The stacked structure may include a first material layer and a second material layer on the first material layer. The first material layer may include a compound of [Chemical Formula 1] below. [Chemical Formula 1] InX1As The above second material layer may include a compound of the following [Chemical Formula 2]. [Chemical Formula 2] X2As X1 in the above [Chemical Formula 1] is Ga or Al, and When X1 is Ga, X2 of [Chemical Formula 2] is Al, and When X1 is Al, X2 of [Chemical Formula 2] is Ga.

This application discloses a vertical-cavity surface-emitting laser (VCSEL) and a VCSEL chip. The VCSEL includes: a first distributed Bragg reflector region, an active region, and a second distributed Bragg reflector region. The active region includes at least one active sub-region. Each active sub-region includes a quantum well and a corresponding light-emitting aperture layer. A space layer is disposed between the quantum well and the light-emitting aperture layer. The thickness of the space layer is set to be between 100 nm and 1000 nm.

One of the objectives is to provide an optical deflection module that can homogenize the emitted light within the light-emitting surface using a simple structure. Another objective is to provide an optical deflection module that can adjust the intensity of the emitted light within the light-emitting surface using a simple structure. [Solution] The present invention is an optical deflection module comprising: a light guide layer through which light is guided; and a distributed Bragg reflector layer formed on one surface of the light guide layer, and having a light incident surface through which light is incident on the light guide layer and a light exit surface through which light is emitted on one surface opposite to the light guide layer, wherein the reflectance of the distributed Bragg reflector layer to the light in the region where the light exit surface is formed changes according to the distance from the light incident surface.

A vertical-cavity surface-emitting semiconductor laser (VCSEL) array has two or more VCSELs, where the two or more VCSELs are arranged on a common substrate and each have an epitaxial structure including a laser resonator with a first distributed Bragg reflector (DBR), an active zone, and a second distributed Bragg reflector (DBR). The VCSEL array is designed so that wavelengths of two of the two or more VCSELs differ by at least 0.003 nm and at most 5 nm.

The application discloses a VCSEL chip with nano-imprint microlenses, a preparation method and electronic equipment. The VCSEL chip comprises a substrate, an epitaxial layer and a microlens layer which are sequentially stacked; the epitaxial layer comprises a distributed Bragg reflector structure and an active region, the distributed Bragg reflector structure is composed of high-refractive-index and low-refractive-index semiconductor material layers which are alternately grown and is located on the upper and lower sides of the active region to form a laser resonant cavity; the active region is used for releasing photons under the action of current and continuously amplifying in the laser resonant cavity until emitting from the microlens layer; the microlens layer is formed on the surface of the epitaxial layer by a nano-imprint process of a nano-imprint material, the microlens layer has a first preset thickness and covers the surface of the epitaxial layer according to a preset proportion, so that the substrate is thinned to a second preset thickness. Thus, under the demand of structural strength, by thinning the substrate, not only the production cost is saved, but also the heat dissipation effect is improved.

An optical signal transmitter (AXEL) in which a quality of an optical signal waveform is maintained includes a distributed Bragg reflector to be coupled with an emission end surface of an SOA in an optical circuit unit including an optical waveguide core portion formed on an upper surface of a substrate. In the optical circuit unit, a diffraction grating formed on an upper surface side opposite to an absorption layer of an EA optical modulator and a diffraction grating formed on an upper surface side of a reflection layer of the distributed Bragg reflector have a wavelength selectivity.

A self-mixing interferometric, SMI, laser sensor comprises a vertical cavity surface emitting laser, VCSEL, configured to emit laser radiation, the VCSEL comprising a first distributed Bragg reflector, DBR, a second DBR and a cavity region including an active light generation region, wherein the cavity region is arranged in a layer structure between a front side of the first DBR and a back side of the second DBR. Therein at least one of the first and second DBR comprises a first contrast region and a second contrast region, the first contrast region having a first refractive index contrast Δn1 regarding an emission wavelength of the VCSEL and the second contrast region having a second refractive index contrast Δn2 / n larger than the first refractive index contrast Δn1 / n.

Micro-LED structures include an LED epilayer that may be formed before the micro-LED structure is coupled to a backplane substrate. In order to prevent light leakage and maximize light output, the sidewalls and other surfaces of the LED epilayer may be coated with a reflective coating. For example, the reflective coating may include a metal layer that is electrically insulated between dielectric layers from the micro-LED electrodes. The reflective coating may also be formed using multiple layers in a distributed Bragg reflector configuration. This reflective coating may be formed during the LED fabrication process before the micro-LED structure is coupled to the backplane. The pixel isolation structures on the backplane may also include a reflective coating that is applied above the LED epilayers.

The present application relates to the technical field of vertical cavity surface emitting laser, and particularly relates to a 795nm vertical cavity surface emitting laser and a preparation method thereof; the 795nm vertical cavity surface emitting laser comprises, from bottom to top, an N electrode, a substrate, an N-type distributed Bragg reflector, a columnar mesa and a P electrode arranged in sequence; further comprising a gain guiding structure; the gain guiding structure is composed of a P-side gain guiding layer and an N-side gain guiding layer arranged on the upper side and the lower side of an active region, and a gain control electrode arranged on the P-side gain guiding layer and electrically connected with the P-side gain guiding layer; the columnar mesa comprises a central mesa and a plurality of segmented mesas; the plurality of segmented mesas are arranged around the central mesa and coaxial with the central mesa; an annular groove extending to the inside of the N-type distributed Bragg reflector is arranged between adjacent columnar mesas. The present application realizes gain compensation and spectral stability of the 795nm laser under high-temperature environment through the cooperative work of the gain guiding structure and the composite mesa structure.

A light emitting diode package structure is disclosed. The light emitting diode package structure includes a light emitting diode chip, a wavelength conversion layer, a dielectric layer, a distributed Bragg reflector, a conductive member and a reflective layer. The light emitting diode chip includes a light emitting surface and a plurality of side surfaces. The wavelength conversion layer is disposed on the light emitting surface of the light emitting diode chip, and the wavelength conversion layer includes a plurality of side surfaces. The dielectric layer covers the side surfaces of the light emitting diode chip, and the distributed Bragg reflector is disposed under the light emitting diode chip. The conductive member is disposed under the distributed Bragg reflector and electrically connected to the light emitting diode chip through the distributed Bragg reflector, and the reflective layer is disposed on the side surfaces of the wavelength conversion layer.

The present application relates to photoelectric detector, specifically to a segmented bandwidth enhancement high responsivity silicon germanium photodetector, solve the problem that the volume of the germanium absorption layer of the existing silicon germanium photodetector is large, which leads to large RC parameter of the whole device, and then leads to low photoelectric bandwidth, and reducing the size of the germanium absorption layer may not fully absorb light, resulting in reduced responsivity, the present application uses segmented germanium absorption layer, removes the germanium absorption layer without light field distribution by etching groove, reduces the volume of the germanium absorption layer, reduces the RC parameter, while maintaining the responsivity of the silicon germanium photodetector unchanged, effectively improves the photoelectric bandwidth of the detector, and improves the communication ability of the device. The distributed bragg reflector structure promotes the secondary absorption of light by the germanium absorption layer, further improves the responsivity of the detector, while not affecting the bandwidth, dark current and other performances.

In one embodiment, the disclosure relates to an electro-optical device that includes an optical gain chip that includes; a gain material, the gain material having a gain region, the optical gain chip that includes: N gain chip waveguides; a photonic integrated circuit (PIC) that includes a plurality of layers and a plurality of components, wherein the PIC defines M sections; N external laser cavities; P PIC waveguides; and B distributed Bragg reflector (DBR) rings, wherein each of the N external laser cavities is defined by one of the P PIC waveguides and one of the B DBR rings; and N laser cavities, wherein each laser cavity of the N laser cavities comprises one of the N external laser cavities and one of the N gain chip waveguides.

A light-emitting device includes a semiconductor light-emitting stack and a distributed Bragg reflector (DBR) structure. The semiconductor light-emitting stack includes a light-emitting layer. The DBR structure is disposed on the semiconductor light-emitting stack and includes a plurality of first dielectric material layers and a plurality of second dielectric material layers that are alternately stacked on the semiconductor light-emitting stack. The first dielectric material layer has a first refractive index, and the second dielectric material layer has a second refractive index. The first refractive index is lower than the second refractive index. The second dielectric material layer has an optical thickness that is smaller than that of the first dielectric material layer.

This invention provides a surface-emitting laser device and its manufacturing method. The surface-emitting laser device includes a first type distributed Bragg reflector layer, an active layer, a second type distributed Bragg reflector layer, and an oxide layer. The active layer is disposed on the first type distributed Bragg reflector layer, and the second type distributed Bragg reflector layer is disposed on the active layer. The oxide layer is disposed on the side of the second type distributed Bragg reflector layer near the active layer, and the oxide layer has an opening through which light emitted from the active layer passes. The second type distributed Bragg reflector layer has multiple holes located above the opening and along the light exit path of the light emitted from the active layer.

This invention provides a silicon-based germanium avalanche photodetector, comprising a substrate; an N-type doped silicon layer disposed on the substrate and electrically isolated from it; an intrinsic silicon layer disposed on the side of the N-type doped silicon layer away from the substrate; a P-type doped silicon charge layer disposed on the side of the intrinsic silicon layer away from the substrate; and a P-type doped germanium absorption layer disposed on the side of the P-type doped silicon charge layer away from the substrate. The detector employs a silicon waveguide structure design, allowing optical signals to couple into the P-type doped germanium absorption layer via the silicon layer beneath the P-type doped germanium absorption layer. A distributed Bragg reflector is provided at the detector's output end to reflect any remaining unabsorbed optical signals emitted by the detector. This silicon-based germanium avalanche photodetector achieves low dark current, low voltage, and high speed, thereby improving detector sensitivity and detection performance.

The present application relates to a kind of green light perovskite laser and its preparation method, solve the problem that the energy transfer efficiency of the existing quasi-two-dimensional perovskite is not conducive to the regulation of mixed phase component due to rapid crystallization.The laser includes substrate and the bottom distributed bragg reflector of the alternating structure of titanium oxide and silicon dioxide arranged on substrate in turn, the perovskite luminescent layer of atmosphere auxiliary crystallization created by DMSO and the top distributed bragg reflector of the alternating structure of zinc sulfide and yttrium fluoride.The present application delays the crystallization process of quasi-two-dimensional perovskite by DMSO atmosphere, effectively improves the crystal quality of perovskite, regulates the phase distribution of quasi-two-dimensional perovskite, speeds up the energy transfer process from small n phase (n=2) to large n phase (n≥5), and prepares perovskite film with low surface roughness and good crystallinity. By combining distributed bragg reflector, a microcavity laser is realized under room temperature continuous laser pumping.

A display device includes a substrate, subpixel units and a thin film encapsulation structure. The subpixel units are disposed on the substrate, and each of the subpixel units includes a light emitting part and a pixel defining part surrounding the light emitting part. The thin film encapsulation structure covers the subpixel units, and includes a first encapsulation layer and a second encapsulation layer covering and in contact with the first encapsulation layer. The refractive index of the first encapsulation layer is different from that of the second encapsulation layer. The first encapsulation layer includes first microstructures, and the first microstructures are respectively disposed on the pixel defining parts. The second encapsulation layer includes second microstructures, the second microstructures are respectively disposed on the pixel defining parts, and the second microstructures are respectively fitted with the first microstructures to form distributed Bragg reflectors.