392 results about "Distributed Bragg reflector" patented technology

The invention provides a tunable micro-nano laser based on a perovskite phase change material and a preparation method thereof, and belongs to the technical field of micro-nano photoelectron, the tunable micro-nano laser comprises a substrate, and a distributed Bragg reflector, a gain dielectric layer and a reflector which are sequentially arranged on the substrate from bottom to top; wherein the gain medium is a perovskite material with a crystal phase transition characteristic. The substrate is made of a material which is transparent or low in loss to pump light and emitted light; the distributed Bragg reflector is formed by alternately arranging high-refractive-index layers and low-refractive-index layers; the gain dielectric layer is a perovskite thin film layer with a crystal phase transition characteristic, and a perovskite material has a spectrum tuning function in the laser resonant cavity; the reflecting mirror is composed of a metal film. According to the invention, the perovskite material is used as a gain medium and a phase change material at the same time, the wide-range tuning of laser wavelength is realized, and the tuning range can reach several nanometers or even wider; the energy utilization efficiency can be improved, the stability is high, and the method is suitable for various types of tunable micro-nano laser applications.

The invention relates to a method for accurately calibrating the quarter-wavelength layer thickness of a DBR (Distributed Bragg Reflector). The distributed Bragg reflector (DBR) is formed by alternately growing two materials with the optical thickness of 1 / 4 wavelength. The deviation of the thickness of the DBR enables the reflectivity of the DBR to be reduced, the bandwidth to be reduced and the reflection phase shift to be deviated. In order to accurately control the optical thickness of each layer of the DBR to be 1 / 4 wavelength, the invention provides two complementary resonant cavity comparison structures. By comparing the relative sizes of the cavity mode wavelengths of the two structures, whether the thickness of each layer of the DBR is 1 / 4 of the standard wavelength or not can be judged, and the thickness of each layer can be corrected to be 1 / 4 of the wavelength. The method makes up the defect that the conventional DBR reflection spectrum cannot accurately measure the thickness of each layer of the DBR, has the advantages of simplicity, accuracy and no damage compared with other thickness detection methods, is not only suitable for accurate calibration of the 1 / 4 layer thickness of the DBR, but also can be used for accurate characterization of the thickness of optical thin films made of other materials.

The invention discloses a DBR and Micro-LED structure design method and an electronic device. The DBR structure design method comprises the steps of 1, obtaining a current value range; 2, determining an optimal value of n; 3, determining optimal values of the thicknesses of the first refraction layer and the second refraction layer; 4, determining a current optimal DBR structure, obtaining a relation curve graph of the transmissivity and the incident angle of the current optimal DBR structure, and recording the relation curve graph as a first relation curve graph; 5, the collimation effect of the current optimal DBR structure corresponding to the first relation curve graph is evaluated, a first evaluation result is obtained, and if the first evaluation result meets a preset condition, parameters of the current optimal DBR structure corresponding to the first relation curve graph serve as optimal design parameters; and if the first evaluation result does not meet the preset condition, returning to the step 1 to obtain the current value range again until the first evaluation result meets the preset condition. According to the structure design method, the designed DBR structure is ensured to enable the Micro-LED to have good light emitting effect and collimation.

The present disclosure provides an AlGaInP-based red light emitting diode chip and a preparation method thereof, belonging to the field of optoelectronic manufacturing technology. The AlGaInP-based red light emitting diode chip includes: a substrate, a light emitting structure, a distributed Bragg reflector layer, a passivation layer, a first solder block and a second solder block; the light emitting structure, the distributed Bragg reflector layer and the passivation layer are sequentially stacked on the substrate, the passivation layer has a first through hole and a second through hole exposing the distributed Bragg reflector layer, the hole wall of the first through hole and the hole wall of the second through hole have a concave-convex structure; the first solder block is located in the first through hole and is in contact with the hole wall of the first through hole, and the second solder block is located in the second through hole and is in contact with the hole wall of the second through hole. The embodiment of the present disclosure can improve the problem of relative looseness between the solder block and the via hole, so that the light emitting structure is well fixed in the chip, and the reliability of the chip is improved.

A flip-chip light-emitting diode includes a first conductivity type semiconductor layer, a light-emitting layer, a second conductivity type semiconductor layer, a first transparent dielectric layer, a second transparent dielectric layer, and a distributed Bragg reflector (DBR) structure which are sequentially stacked. The first transparent dielectric layer has a thickness greater than λ / 2n1, and the second transparent dielectric layer has a thickness of mλ / 4n2, wherein m is an odd number, λ is an emission wavelength of the light-emitting layer, n1 is a refractive index of the first transparent dielectric layer, and n2 is a refractive index of the second transparent dielectric layer and is greater than n1.

An emitter includes a substrate; a current-blocking distributed Bragg reflector (DBR) arranged on the substrate, wherein the current-blocking DBR includes a plurality of p-n junctions connected vertically in series to form a bidirectional current-blocking structure; a bottom contact layer arranged on the current-blocking DBR; a bottom DBR arranged on the bottom contact layer; a top DBR arranged on the bottom DBR; an active region configured to generate a laser light, wherein the active region is arranged between the bottom DBR and the top DBR; a top contact layer arranged on the top DBR; and an optical output arranged over the top DBR, wherein the emitter is configured to emit the laser light via the optical output.

A light emitting device is a micro-scale light emitting device including a semiconductor stack, an insulation layer, and a metal reflection layer. The semiconductor stack includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. The insulation layer covers upper and side surfaces of the semiconductor stack. The metal reflection layer is disposed on the insulation layer, and covers at least a portion of the side surface of the semiconductor stack. The insulation layer includes a distributed Bragg reflector.

The invention relates to the technical field of grating interference type acceleration sensors, in particular to a high-resolution acceleration sensor based on a quasi-BIC metasurface and a measuring method. The problems that an existing grating interference type acceleration sensor is low in resolution ratio and large in ohmic loss are solved. The invention discloses a high-resolution acceleration sensor based on a quasi-BIC metasurface. The high-resolution acceleration sensor comprises a laser, a beam splitter, an acoustic optical modulator, an electro-optical modulator, an optical circulator, a packaging box, a balanced photoelectric detector, an amplifier and a digital instrument, a light-transmitting micropore is formed in the top wall of the packaging box in a penetrating manner; a sensing unit is packaged in an inner cavity of the packaging box; the sensing unit comprises two silicon supporting blocks, a silicon mass block, a distributed Bragg reflector, four columns of silicon nitride cantilever beams, a transparent substrate and a quasi-BIC metasurface structure. The method is suitable for measuring the acceleration signal.

A display device according to an embodiment includes a lower substrate, a first bonding electrode disposed on the lower substrate, a first light emitting element disposed on the first bonding electrode, a second bonding electrode disposed on the first light emitting element, and a second light emitting element disposed on the second bonding electrode, the second bonding electrode includes a first distributed Bragg reflector including at least one pair of a first transparent conductive layer and a second transparent conductive layer having different refractive indices that are alternately stacked.

The invention discloses a display substrate, a display panel and a manufacturing method. The display substrate of one embodiment comprises a substrate; the light-emitting device layer is arranged on the substrate and comprises a plurality of sub-pixels arranged in an array, and each sub-pixel comprises a light-emitting unit; the packaging layer is arranged on the light-emitting device layer and comprises a plurality of packaging sub-layers, and the outermost packaging sub-layer far away from the light-emitting device layer is made of an inorganic material; the color filter layer is arranged on the packaging layer; wherein the color filter layer comprises a distributed Bragg reflector transmitting light of different colors and a Bragg filter layer comprising a plurality of first inorganic film layers and second inorganic film layers which are stacked and alternately arranged on a packaging layer, and the refractive index of the first inorganic film layers is smaller than that of the second inorganic film layers. The innermost layer, close to the packaging layer, of the Bragg filter layer is a first inorganic film layer, and the outermost layer, away from the packaging layer, of the Bragg filter layer is a second inorganic film layer. The embodiment of the invention effectively improves the use reliability of a display product, and has practical application value.

A semiconductor laser includes a distributed feedback (DFB) region including an active layer and a uniform grating and two distributed Bragg reflector (DBR) region including an core layer and a uniform grating and optically coupled to respective ends of the DFB region and lengths of the DFB region and the DBR regions in a waveguide direction are set so that a photon-photon resonance frequency is in a range from 40 GHz to 50 GHz when an operating temperature is between 25 degrees and 75 degrees. The semiconductor laser optimizes a PPR effect and enables maximizing a modulation bandwidth.

A method of determining the position and shape of a flexible arm robot having at least one distributed Bragg reflector integrated, the method comprising: moving the flexible arm robot through a series of movements; tracking the movements of the flexible arm robot and recording positional data of at least a section of the flexible arm robot as a ground truth and interrogating the distributed Bragg reflector during these movements; inputting the data from the interrogation of the distributed Bragg reflector and the camera into a machine learning algorithm; using the output of the machine learning algorithm to determine a calibration function for the position of the distributed Bragg reflector within the flexible arm robot; and applying the calibration function to software used to control the movement of the flexible arm robot.

The invention relates to a semiconductor device, e.g. for the emission or absorption of light, preferably in the deep ultraviolet (DUV) range. The device, e.g. a resonant cavity light emitting diode (RCLED) or a laser diode, is formed from: a substrate layer (302), preferably comprising a distributed Bragg reflector (DBR); a graphitic layer (304); and at least one semiconductor structure (310), preferably a wire or a pyramid, grown on the graphitic layer, with or without the use of a mask layer (306). The semiconductor structure is constructed from at least one III-V semiconductor n-type doped region (316) and a hexagonal boron-nitride (hBN) region (312), preferably being p-type doped hBN.

The invention discloses a colloidal quantum dot-based broadband super-radiation light-emitting diode and a preparation method thereof, belongs to the technical field of semiconductor devices, and solves the technical problem that the improvement of optical gain is limited due to insufficient spectrum regulation and control precision of colloidal quantum dots in the application of a super-radiation light-emitting diode in the prior art. The diode comprises a distributed Bragg reflector and a bar structure, wherein the bar structure is composed of an ITO cathode, an electron transport layer, a CQD active layer, a hole transport layer, a spacer layer, a current focusing structure layer, a hole injection layer and an Ag anode which are sequentially arranged from bottom to top and composed of the ITO cathode, the electron transport layer, the CQD active layer, the hole transport layer, the spacer layer and the current focusing structure layer; the distributed Bragg reflector is of a transverse Bragg reflection waveguide structure, and the structure comprises a plurality of pairs of alternating layers; the CQD active layer is filled with core-shell colloidal quantum dots; the spacing layer and the current focusing structure layer are of slit structures; and the Ag anode and the distributed Bragg reflector form a transverse cavity structure along the plane direction. The super-radiation light-emitting diode is suitable for the technical fields of broadband optical coherence tomography, gyroscope optical fiber sensing and the like.

A flip-chip light-emitting diode includes a first conductivity type semiconductor layer, a light-emitting layer, a second conductivity type semiconductor layer, a first transparent dielectric layer, a second transparent dielectric layer, and a distributed Bragg reflector (DBR) structure which are sequentially stacked. The first transparent dielectric layer has a thickness greater than λ / 2n1, wherein A is an emission wavelength of the light-emitting layer, n1 is a refractive index of the first transparent dielectric layer, n2 is a refractive index of the second transparent dielectric layer and is greater than n1, and n2 is lower than a refractive index of the second conductivity type semiconductor layer. A light-emitting apparatus including the aforesaid flip-chip light-emitting diode is also provided.

The invention discloses a high-efficiency bandwidth product photodiode structure. According to the photodiode, the single-side N contact mesa is adopted, and the semiconductor material below the N contact layer is etched by adopting the selective etching liquid to form the undercut structure, so that the optical signal is further promoted to enter the absorption layer, and meanwhile, the parasitic capacitance of the device is greatly reduced. A unilateral N contact table board with an undercut structure is adopted, and micro-nano structures such as a DBR (Distributed Bragg Reflector), a composite optical waveguide and the like are integrated on a semi-insulating substrate in a monolithic manner, so that the efficiency bandwidth product of the photodiode is improved, and the basic scientific problem that the quantum efficiency and 3dB bandwidth of the photodiode are mutually restricted is solved.

A dynamically tunable optical mirror named as a resonant cavity switching (RCS) device and a refractive index modulating (RIM) device are disclosed. The RCS device is comprising a nanoporous piezoelectric III-nitride material layer, such as GaN, AlN, AlScN, AlGaScN or their alloys sandwiched between a high-reflectivity distributed Bragg reflector (DBR) and a lower-reflectivity output DBR. The RIM devise is comprising the nanoporous III-nitride material layer. The nanoporous layer, patterned with interdigital transducers (IDTs), is actuated via surface acoustic waves (SAWs) or electric fields to induce rapid, reversible modulation of its effective refractive index. This enables sub-nanosecond switching between resonant and off-resonant optical states, facilitating efficient energy extraction, optical pulse carving, or phase control.

A modified distributed feedback (DFB) laser comprises a gain region with a distributed feedback grating and a back reflector that receives a portion of laser light generated by the gain region and the distributed feedback. The back reflector is a wavelength-selective reflector that retroreflects the portion of the received laser light back to the gain region, thereby stimulating single mode laser oscillation and / or improving a side mode suppression ratio (SMSR) of the laser light generated by the modified DFB laser. The spectral properties of the laser output by the modified DFB laser can be independent of position of a cleaved facet of the laser chip near a back end of the modified DFB laser and / or the performance of the modified DFB laser can be maintained over a large number of laser chips separated from a wafer.

The invention discloses a perovskite quantum dot Micro-LED based on a double-ligand strategy and a preparation method thereof. The Micro-LED structurally comprises a distributed Bragg reflector, a quantum dot color conversion unit, a GaN blue light LED and a CMOS integrated circuit substrate. The GaN blue light emitting unit is composed of a plurality of blue light LED pixel points and is integrated on the CMOS integrated circuit substrate. The quantum dot color conversion unit sequentially comprises a glass substrate, a metal electrode, an electrode modification layer, an electron transport layer, a perovskite quantum dot layer, a hole transport layer, a hole injection layer, a transparent electrode and a packaging film from bottom to top, and is used for converting blue light into a required color and realizing a wider color gamut. The luminescent material of the perovskite quantum dot layer is CsPbX < 3 + > PEABr < + > fluorine-containing substituted phenyl ketone, wherein X is halogen elements Br, I and Cl. According to the invention, not only can many problems in the traditional technology be solved, but also the luminous efficiency and the environmental stability of the device can be remarkably improved, and a new technical solution and a wide application prospect are provided for the development of the next generation of high-performance Micro-LED.

A display device includes a light-emitting substrate, a counter substrate, multiple color conversion layers and, a patterned distributed Bragg reflector. The counter substrate is disposed opposite to the light-emitting substrate, and has multiple sub-pixel regions. Each of the sub-pixel regions has a sub-pixel width. The color conversion layers are disposed between the light-emitting substrate and the counter substrate. The patterned distributed Bragg reflector is disposed on one side of the color conversion layers, and has multiple openings. Each of the openings has an opening width greater than or equal to 1 μm and less than the sub-pixel width.

The present disclosure relates to a monolithically integrated dual-wavelength transmitter for a passive optical network (PON), which may be suitable for both a gigabit PON (GPON) and a 10-gigabit-PON (XG-PON). The integrated transmitter includes two distributed feedback (DFB) lasers, a first DFB laser to emit a continuous first laser beam at a first wavelength along an optical path, and a second DFB laser to emit a modulated second laser beam at a second wavelength along the optical path in the same direction as the first DFB laser. The transmitter also includes an electro-absorption modulator (EAM) after the first DFB laser in the optical path, which is configured to modulate the first laser beam, and a distributed Bragg reflector (DBR) between the EAM and the second DFB laser in the optical path, which is configured to transmit light at the first wavelength

This invention provides a semiconductor structure and its manufacturing method. The semiconductor structure includes a transparent substrate, an epitaxial structure, and a distributed Bragg reflector structure. The epitaxial structure is disposed on one side of the transparent substrate, and the distributed Bragg reflector structure is disposed on the back side of the transparent substrate opposite to the epitaxial structure. Visible light can substantially pass through the epitaxial structure, the transparent substrate, and the distributed Bragg reflector structure in a substantial sequence, but other light rays besides visible light can be substantially reflected back into the transparent substrate by the distributed Bragg reflector structure.

The invention discloses a perovskite quantum dot Micro-LED based on interface modification and a preparation method of the perovskite quantum dot Micro-LED. The Micro-LED structurally comprises a distributed Bragg reflector, a quantum dot color conversion unit, a GaN blue light LED and a CMOS (complementary metal oxide semiconductor) integrated circuit substrate. The GaN blue light emitting unit is composed of a plurality of blue light LED pixel points and is integrated on the CMOS integrated circuit substrate. The quantum dot color conversion unit sequentially comprises a glass substrate, a metal electrode, an electrode modification layer, an electron transport layer, a perovskite quantum dot layer, a hole transport layer, a hole injection layer, a transparent electrode and a packaging film from bottom to top, and is used for converting blue light into a required color and realizing a wider color gamut. Wherein bifunctional ether is added on the electron transport layer for optimization. The research not only can solve a plurality of problems existing in the traditional technology, but also can significantly improve the luminous efficiency and environmental stability of the device, and provides a novel and promising technical solution for the development of the next generation of high-performance Micro-LED.

Various embodiments of the present application are directed towards an image sensor including a wavelength tunable narrow band filter, as well as methods for forming the image sensor. In some embodiments, the image sensor includes a substrate, a first photodetector, a second photodetector, and a filter. The first and second photodetectors neighbor in the substrate. The filter overlies the first and second photodetectors and includes a first distributed Bragg reflector (DBR), a second DBR, and a first interlayer between the first and second DBRs. A thickness of the first interlayer has a first thickness value overlying the first photodetector and a second thickness value overlying the second photodetector. In some embodiments, the filter is limited to a single interlayer. In other embodiments the filter further includes a second interlayer defining columnar structures embedded in the first interlayer and having a different refractive index than the first interlayer.

The utility model relates to the technical field of backlight modules, in particular to a backlight module with a distributed bragg reflector (DBR) reflection structure, which comprises a substrate structure, an optical film, a light guide packaging structure and an assembly component, and the assembly component comprises an assembly frame, a baffle, two locking pieces, a flexible pad, two abutting pieces and a heat conduction structure. The substrate structure is located at the bottom of the assembly frame, the two abutting pieces are operated to abut against the two sides of the light guide packaging structure so that the optical module can be fixed in the assembly frame, then the baffle is operated to be buckled with the notch of the assembly frame, the locking piece is operated for assembly, overall assembly of the backlight module is completed, and the heat productivity of the overall backlight module is reduced in cooperation with the heat conduction structure. The problems that in the long-time use process of an existing backlight module with a DBR reflection structure, a large amount of heat can be generated by the backlight module, adhesion of all structures in the backlight module is likely to be loosened, and follow-up normal use is affected are solved.

The invention provides a compact low-loss grating coupler with a bottom reflector, which sequentially comprises a silicon substrate layer, a distributed Bragg reflector, a buried oxide layer, a top silicon layer and a top cladding from bottom to top, and is characterized in that the distributed Bragg reflector is formed by laminating silicon and silicon dioxide; the top silicon layer is composed of a focusing type grating waveguide structure and a strip-shaped waveguide structure connected with the focusing type grating waveguide structure, the focusing type grating waveguide structure is composed of a shallow etching area and a full-height waveguide, optimization design is conducted by evaluating the influence rule of physical parameters, and finally efficient transmission of optical signals in an integrated photoelectric system can be achieved. According to the invention, the substrate loss is reduced, and the efficiency of the grating coupler is improved.

A light-emitting diode includes a semiconductor light-emitting stack and a distributed Bragg reflector (DBR) structure. The semiconductor light-emitting stack has a first surface and a second surface opposite to each other. The DBR structure is disposed on one of the first surface and the second surface of the semiconductor light-emitting stack, and includes at least one set of light-transmitting layers including at least two of the light-transmitting layers which have different refractive indices and roughened interface.

A self-mixing interferometry SMI laser sensor (1) comprises a vertical cavity surface emitting laser (10) (VCSEL) configured to emit laser radiation, the VCSEL comprising a first distributed Bragg reflector (11) (DBR), a second DBR (12), and a cavity region (13) comprising an active light generating region (13a), where the cavity region (13) is arranged in a layer structure between a front side of the first DBR (11) and a back side of the second DBR (12). Wherein at least one of the first and second DBRs (11, 12) comprises a first contrast region (14) and a second contrast region (15), the first contrast region (14) having a first refractive index contrast [Delta] n1 with respect to an emission wavelength of the VCSEL (10), and the second contrast region (15) having a second refractive index contrast [Delta] n2 / n greater than the first refractive index contrast [Delta] n1 / n.

Solid state lighting devices including light emitting diodes (LEDs), and more particularly, include a reflector for a support structure in an LED package (48). The support structure includes an arrangement of dielectric reflectors (18) relative to conductive traces (14) and LED chips (36) patterned on the submount (12). The dielectric reflector includes a plurality of dielectric layer structures that form a distributed Bragg reflector (DBR) or in some cases an aperiodic Bragg reflector. Such dielectric reflectors (18) may be disposed on one or more conductive traces (14) and on portions of the submount (12) that are not covered by the conductive traces to provide increased reflectance over various wavelengths provided by the LED chip, including wavelengths in the ultraviolet (UV) spectrum. Each disclosed LED package (34, 42, 44, 46, 48, 50, 52, 54, 56, 60, 62, 64) is also provided with a cover structure (38).

The invention discloses a VCSEL laser, which comprises at least one light emitting array, and each light emitting array comprises at least one light emitting unit. Each light-emitting unit sequentially comprises a first electrode, a first Bragg reflector, an active region, a second Bragg reflector and a second electrode from bottom to top, a tunnel junction is arranged between the first Bragg reflector and the second Bragg reflector, and the second Bragg reflector is an N-type doped DBR. An N-type doped distributed Bragg reflector (N-DBR) is adopted as a second Bragg reflector, and the electro-optical conversion efficiency of the device is remarkably improved through optimization of carrier transport characteristics. Compared with the problem that the ohmic contact resistance is too high due to the fact that a traditional P-type DBR is limited by low hole mobility, the high electron mobility of an N-type material can effectively reduce the series resistance of a reflector area, and therefore Joule heat is greatly reduced.