218 results about "Distributed Bragg reflector" patented technology

The present disclosure provides an AlGaInP-based red light emitting diode chip and a preparation method thereof, belonging to the field of optoelectronic manufacturing technology. The AlGaInP-based red light emitting diode chip includes: a substrate, a light emitting structure, a distributed Bragg reflector layer, a passivation layer, a first solder block and a second solder block; the light emitting structure, the distributed Bragg reflector layer and the passivation layer are sequentially stacked on the substrate, the passivation layer has a first through hole and a second through hole exposing the distributed Bragg reflector layer, the hole wall of the first through hole and the hole wall of the second through hole have a concave-convex structure; the first solder block is located in the first through hole and is in contact with the hole wall of the first through hole, and the second solder block is located in the second through hole and is in contact with the hole wall of the second through hole. The embodiment of the present disclosure can improve the problem of relative looseness between the solder block and the via hole, so that the light emitting structure is well fixed in the chip, and the reliability of the chip is improved.

A display device according to an embodiment includes a lower substrate, a first bonding electrode disposed on the lower substrate, a first light emitting element disposed on the first bonding electrode, a second bonding electrode disposed on the first light emitting element, and a second light emitting element disposed on the second bonding electrode, the second bonding electrode includes a first distributed Bragg reflector including at least one pair of a first transparent conductive layer and a second transparent conductive layer having different refractive indices that are alternately stacked.

A semiconductor laser includes a distributed feedback (DFB) region including an active layer and a uniform grating and two distributed Bragg reflector (DBR) region including an core layer and a uniform grating and optically coupled to respective ends of the DFB region and lengths of the DFB region and the DBR regions in a waveguide direction are set so that a photon-photon resonance frequency is in a range from 40 GHz to 50 GHz when an operating temperature is between 25 degrees and 75 degrees. The semiconductor laser optimizes a PPR effect and enables maximizing a modulation bandwidth.

The invention relates to a semiconductor device, e.g. for the emission or absorption of light, preferably in the deep ultraviolet (DUV) range. The device, e.g. a resonant cavity light emitting diode (RCLED) or a laser diode, is formed from: a substrate layer (302), preferably comprising a distributed Bragg reflector (DBR); a graphitic layer (304); and at least one semiconductor structure (310), preferably a wire or a pyramid, grown on the graphitic layer, with or without the use of a mask layer (306). The semiconductor structure is constructed from at least one III-V semiconductor n-type doped region (316) and a hexagonal boron-nitride (hBN) region (312), preferably being p-type doped hBN.

The invention discloses a colloidal quantum dot-based broadband super-radiation light-emitting diode and a preparation method thereof, belongs to the technical field of semiconductor devices, and solves the technical problem that the improvement of optical gain is limited due to insufficient spectrum regulation and control precision of colloidal quantum dots in the application of a super-radiation light-emitting diode in the prior art. The diode comprises a distributed Bragg reflector and a bar structure, wherein the bar structure is composed of an ITO cathode, an electron transport layer, a CQD active layer, a hole transport layer, a spacer layer, a current focusing structure layer, a hole injection layer and an Ag anode which are sequentially arranged from bottom to top and composed of the ITO cathode, the electron transport layer, the CQD active layer, the hole transport layer, the spacer layer and the current focusing structure layer; the distributed Bragg reflector is of a transverse Bragg reflection waveguide structure, and the structure comprises a plurality of pairs of alternating layers; the CQD active layer is filled with core-shell colloidal quantum dots; the spacing layer and the current focusing structure layer are of slit structures; and the Ag anode and the distributed Bragg reflector form a transverse cavity structure along the plane direction. The super-radiation light-emitting diode is suitable for the technical fields of broadband optical coherence tomography, gyroscope optical fiber sensing and the like.

A dynamically tunable optical mirror named as a resonant cavity switching (RCS) device and a refractive index modulating (RIM) device are disclosed. The RCS device is comprising a nanoporous piezoelectric III-nitride material layer, such as GaN, AlN, AlScN, AlGaScN or their alloys sandwiched between a high-reflectivity distributed Bragg reflector (DBR) and a lower-reflectivity output DBR. The RIM devise is comprising the nanoporous III-nitride material layer. The nanoporous layer, patterned with interdigital transducers (IDTs), is actuated via surface acoustic waves (SAWs) or electric fields to induce rapid, reversible modulation of its effective refractive index. This enables sub-nanosecond switching between resonant and off-resonant optical states, facilitating efficient energy extraction, optical pulse carving, or phase control.

A display device includes a light-emitting substrate, a counter substrate, multiple color conversion layers and, a patterned distributed Bragg reflector. The counter substrate is disposed opposite to the light-emitting substrate, and has multiple sub-pixel regions. Each of the sub-pixel regions has a sub-pixel width. The color conversion layers are disposed between the light-emitting substrate and the counter substrate. The patterned distributed Bragg reflector is disposed on one side of the color conversion layers, and has multiple openings. Each of the openings has an opening width greater than or equal to 1 μm and less than the sub-pixel width.

The present disclosure relates to a monolithically integrated dual-wavelength transmitter for a passive optical network (PON), which may be suitable for both a gigabit PON (GPON) and a 10-gigabit-PON (XG-PON). The integrated transmitter includes two distributed feedback (DFB) lasers, a first DFB laser to emit a continuous first laser beam at a first wavelength along an optical path, and a second DFB laser to emit a modulated second laser beam at a second wavelength along the optical path in the same direction as the first DFB laser. The transmitter also includes an electro-absorption modulator (EAM) after the first DFB laser in the optical path, which is configured to modulate the first laser beam, and a distributed Bragg reflector (DBR) between the EAM and the second DFB laser in the optical path, which is configured to transmit light at the first wavelength

This invention provides a semiconductor structure and its manufacturing method. The semiconductor structure includes a transparent substrate, an epitaxial structure, and a distributed Bragg reflector structure. The epitaxial structure is disposed on one side of the transparent substrate, and the distributed Bragg reflector structure is disposed on the back side of the transparent substrate opposite to the epitaxial structure. Visible light can substantially pass through the epitaxial structure, the transparent substrate, and the distributed Bragg reflector structure in a substantial sequence, but other light rays besides visible light can be substantially reflected back into the transparent substrate by the distributed Bragg reflector structure.

The invention discloses a VCSEL laser, which comprises at least one light emitting array, and each light emitting array comprises at least one light emitting unit. Each light-emitting unit sequentially comprises a first electrode, a first Bragg reflector, an active region, a second Bragg reflector and a second electrode from bottom to top, a tunnel junction is arranged between the first Bragg reflector and the second Bragg reflector, and the second Bragg reflector is an N-type doped DBR. An N-type doped distributed Bragg reflector (N-DBR) is adopted as a second Bragg reflector, and the electro-optical conversion efficiency of the device is remarkably improved through optimization of carrier transport characteristics. Compared with the problem that the ohmic contact resistance is too high due to the fact that a traditional P-type DBR is limited by low hole mobility, the high electron mobility of an N-type material can effectively reduce the series resistance of a reflector area, and therefore Joule heat is greatly reduced.

In an example, the present invention provides a laser system. The laser system has a source laser (e.g., CBC) coupled to first mirror device opposing a second mirror device and configured to generate a resonating laser beam between the first mirror and the second mirror. In an example, the system has a piezoelectric device configured to the second mirror device and characterized by a refractive e index such that one or more voids is changed by applying an energy to the piezo electric device to cause a change in a value of the refractive index, e.g., by more than 0.0001, to allow the resonating laser beam or a portion of the resonating laser to traverse through a portion of the second mirror device.

The present application provides a laser epitaxial structure and a method for preparing a vertical cavity surface emitting laser, which relate to the field of laser technology and include a substrate, and a bottom N-type distributed Bragg reflector, a quantum well, a P-type distributed Bragg reflector, a tunnel junction, and a top N-type distributed Bragg reflector stacked in sequence on the substrate, or a bottom N-type distributed Bragg reflector, a tunnel junction, a P-type distributed Bragg reflector, a quantum well, and a top N-type distributed Bragg reflector stacked in sequence on the substrate. Thus, by adding a tunnel junction to the laser epitaxial structure, a device structure of dual N-type distributed Bragg reflectors can be formed, and then a device structure of dual N-type metal layers can be formed, so that the performance of the device in terms of carrier mobility and overall electrical efficiency is improved, and at the same time, the heat dissipation of the device can be improved.

A QCL includes a gain region that generates radiation. An optical waveguide feeds the radiation back to the gain region. A first order and / or a second order Bragg reflector are formed in the optical waveguide. The first order Bragg reflector narrows a spectrum of the radiation. The second order Bragg reflector outcouples the radiation through a large facet.

Optoelectronic light emitting devices are provided with directly bonded circuitry, such as control or driver circuitry. The optoelectronic light emitting devices incorporate distributed Bragg reflector (DBR) layers that can be tuned to reflect the light of a particular wavelength, and that facilitate direct bonding and electrical contact between optoelectronic light emitting device substrates (wafers or dies) and control circuitry. In some embodiments the DBR layers provide direct bonding interfaces, such as hybrid bonding surfaces.

The invention relates to a nonlinear optical crystal cavity and a preparation method thereof. The nonlinear optical crystal cavity comprises at least two layers of Van der Waals material layers which are arranged in a stacked mode and spaced, and the materials of the Van der Waals material layers comprise Van der Waals materials with center inversion asymmetry; the optical resonant cavity comprises two layers of distributed Bragg reflectors which are oppositely arranged, and the two layers of distributed Bragg reflectors are arranged on the two surfaces of the outermost side in the stacking direction of the Van der Waals material layer respectively; the driving assembly is connected to the Van der Waals material layers, and the driving assembly is used for adjusting the rotating angle between the adjacent Van der Waals material layers and the interval between the adjacent Van der Waals material layers. The nonlinear optical crystal cavity provided by the invention has the capabilities of adjustable function and wide-band working, and can realize high nonlinear conversion efficiency under different wavelengths at the same time.

[Object] To provide a vertical cavity surface emitting laser device and a vertical cavity surface emitting laser device array that use a GaAs substrate and have excellent light emission efficiency and reliability.[Solving Means] A vertical cavity surface emitting laser device according to the present technology includes: a substrate; and a light-emitting unit. The substrate is formed of InxGa1-xAs (x is 0.005 or more and 0.015 or less) and has a carrier concentration of less than 5×1017 / cm3. The light-emitting unit includes a first distributed Bragg reflector (DBR) that is formed on the substrate and reflects light having a specific wavelength, a second DBR that reflects light having the wavelength, and an active region that is disposed between the first DBR and the second DBR and generates light emission due to carrier recombination.

In one aspect, the disclosure relates to micro-LED based AR displays combining stacked red, green, and blue LEDs, distributed Bragg reflectors, and diffractive optics; methods of making the same; and augmented reality displays using the same. In one aspect, the light generated by the LEDs is reflected within the optical cavity of DBR / LED / DBR, creating a highly directional (Δθ≤±5°) and monochromatic (FWHM≤5≤nm) blue light. In an aspect, the luminance of the disclosed inorganic-based micro-LEDs is orders of magnitude higher than that of organic LEDs while also providing high directionality and monochromaticity, leading to higher image quality. In a further aspect, the small size of the disclosed light source and combiner allows a much more compact and light-weight AR device to be constructed.

A vertical-cavity surface-emitting laser (VCSEL) emitter device includes a highly-doped cap layer; and a stacked structure comprising a top surface and an edge region. The highly-doped cap layer is arranged on the top surface. The stacked structure includes a bottom distributed Bragg reflector (DBR) mirror; a top DBR mirror; an active area arranged between the top DBR mirror and the bottom DBR mirror and configured to generate laser light; and at least one oxide layer, wherein an oxide aperture is formed through the at least one oxide layer for current confinement and optical index guiding. An isolation trench is arranged at the edge region, wherein the isolation trench extends through the highly-doped cap layer and into the stacked structure, including partially into the bottom DBR mirror, and wherein the isolation trench is configured to block current from spreading into the edge region via the highly-doped cap layer.

The application relates to a surface enhanced Raman scattering (SERS) substrate, a preparation method and application thereof, and belongs to the technical field of Raman spectrum detection. The substrate comprises, from bottom to top, a substrate layer, a distributed Bragg reflector, a chalcogen phase change material functional layer and a nanoscale metal structure layer. The distributed Bragg reflector is composed of a periodic structure stack of medium materials with different refractive indexes. The distributed Bragg reflector is coupled with the nanoscale metal structure layer to excite a Tamm state. The chalcogen phase change material functional layer can realize reversible regulation of amorphous state and crystalline state under external light excitation, changes the Tamm state resonance wavelength to regulate the SERS enhancement effect. The application realizes high-sensitivity detection through double enhancement of the Tamm state and localized surface plasmon resonance, has the characteristics of non-volatility, reconfigurability, high reproducibility and design flexibility, is convenient to operate, stable in performance, and is suitable for fields of chemical biological sensing, laboratory chip systems and optical encryption.

The invention relates to the technical field of semiconductor display, and discloses a Micro-LED micro display chip and a manufacturing process thereof. A bonding metal layer is arranged at the top of the lower substrate; a metal reflector is arranged at the top of the bonding metal layer; a distributed Bragg reflector is arranged at the top of the metal reflector; a first indium tin oxide layer is laid on the top of the distributed Bragg reflector; an LED epitaxial assembly is arranged at the top of the first indium tin oxide layer; and a second indium tin oxide layer is laid on the other side of the LED epitaxial assembly. The middle parts of the metal reflector, the distributed Bragg reflector, the first indium tin oxide layer and the LED epitaxial assembly are respectively provided with an optical resonance region and an MESA region. By arranging the composite reflection structure and the LED epitaxial assembly to form an optical resonant cavity, light emission in the vertical direction is enhanced, and the light output power of the chip is remarkably improved; meanwhile, the passivation layer on the side wall effectively inhibits the surface leakage current.

A display apparatus includes a liquid crystal panel; and a backlight unit configured to provide light to the liquid crystal panel, wherein the backlight unit includes: a substrate; and a plurality of light emitting diode groups provided on an upper surface of the substrate, wherein each of the plurality of light emitting diode groups includes a red light emitting diode, a green light emitting diode, and a blue light emitting diode, wherein each of the red light emitting diode, the green light emitting diode, and the blue light emitting diode includes: a light emitting layer; and a distributed Bragg reflector (DBR) provided on the light emitting layer, and wherein reflectivities of the distributed Bragg reflectors of the red light emitting diode, the green light emitting diode, and the blue light emitting diode are within a same range of reflectivity according to an incident angle of light incident on the DBRs.

The invention relates to the technical field of light-emitting diodes, and discloses a light-emitting diode based on a selected area self-assembly nanostructure and a preparation method of the light-emitting diode. A main buffer layer disposed on one side surface of the substrate layer; the distributed Bragg reflector structure comprises a plurality of porous n-type doped layers and a plurality of n-type doped layers, and the plurality of porous n-type doped layers and the plurality of n-type doped layers are alternately arranged from bottom to top; the silicon dioxide dielectric mask layer is arranged on the surface of one side, far away from the main buffer layer, of the n-type doping layer on the uppermost layer, a plurality of windows arranged in an array mode are formed in the silicon dioxide dielectric mask layer, and the windows expose partial area of the n-type doping layer on the uppermost layer; the plurality of hexagonal pyramid structures are in one-to-one correspondence with the plurality of windows; the active layer is arranged on the semi-polar surfaces of the plurality of hexagonal pyramid structures and is used for emitting red light; and the p-type doped layer is arranged on the surface of one side, far away from the hexagonal pyramid structure, of the active layer. According to the invention, the mismatched stress can be relaxed, and the indium component is improved.

A device for color conversion is provided. The device comprises a Distributed Bragg Reflector (DBR) structure on a substrate and a metasurface comprising a plurality of nanostructures is disposed on the DBR. Each nanostructure includes a first dielectric layer with a first refractive index on a second dielectric layer with a second refractive index, the first refractive index being different from the second refractive index. An active medium comprising quantum dots is disposed in between the plurality of nanostructures. The geometric parameters of the plurality of nanostructures are controlled such that the cavity modes of different natures can be tailored to match the absorption spectra of the active medium. This enhances absorption of incident light and color-conversion efficiency.

A light-emitting device includes a first electrode, a second electrode facing the first electrode, and an interlayer disposed between the first electrode and the second electrode. The interlayer includes an emission layer, and a distributed Bragg reflector (DBR) layer in which a first layer and a second layer are alternately stacked. A refractive index of the first layer is different from a refractive index of the second layer.

An LED device comprises a mesa comprising semiconductor layers, the semiconductor layers including an N-type layer, an active layer, and a P-type layer, the mesa having a top surface and at least one side wall, the at least one side wall defining a trench have a bottom surface. A transparent conductive layer is on at least one side wall and in the trench. A cathode layer is in the trench on the transparent conductive layer. A p-type contact is on the top surface of the mesa. In some embodiments, a spacer layer is formed between the transparent conductive layer and the cathode layer. In other embodiments, a distributed Bragg reflector is formed between the transparent conductive layer and the cathode layer.

The invention discloses an underwater laser communication transmitter compatible with multiple modulation formats, which belongs to the field of communication transmitters and comprises a seed source module, a signal modulation module, a power amplification module, an LBO wavelength conversion module and a small-angle collimation transmitting module. The seed source module is a 1064nm DBR (Distributed Bragg Reflector) narrow linewidth laser; the signal modulation module comprises a modulator, and switching of OOK modulation formats, BPSK modulation formats and DPSK modulation formats is achieved by adjusting bias points; the power amplification module adopts a main oscillation power amplification structure and comprises two pre-amplification stages and two main amplification stages; the LBO wavelength conversion module is used for carrying out frequency multiplication on 1064nm light to obtain 532nm green light, and the output power is not less than 7W; and the small-angle collimation transmitting module compresses the green light and then outputs the compressed green light.

The application provides a strong microcavity resonance enhanced infrared detector and a preparation method thereof, and belongs to the technical field of infrared detectors. The strong microcavity resonance enhanced infrared detector comprises a readout circuit located at a bottom layer; a distributed Bragg reflector located above the readout circuit, which has a plurality of indium columns with a length direction along a thickness direction of the distributed Bragg reflector; an infrared photosensitive chip located above the distributed Bragg reflector, which is interconnected with the readout circuit through the indium columns; and a passivation layer located above the infrared photosensitive chip; wherein a resonance cavity is formed between an upper surface of the distributed Bragg reflector and a lower surface of the passivation layer to perform resonance enhancement on target infrared light to be detected. The application can improve the quantum efficiency of the infrared detector, improve the effective conduction rate and reliability of the flip-chip welding of the indium columns, and improve the performance of the infrared detector.

The invention discloses a preparation method of a flexible distributed Bragg reflector, relates to the technical field of thin film preparation, and aims to solve the problem of poor reflectivity performance of a distributed Bragg reflector in the prior art. The method comprises the following steps: placing a substrate in a reaction cavity, wherein the substrate is polyethylene glycol terephthalate; forming an aluminum oxide film layer on the substrate by adopting an atomic layer deposition method and taking trimethyl aluminum and water as precursors; forming a hafnium oxide thin film layer on the aluminum oxide thin film layer by adopting an atomic layer deposition method and taking hafnium tetra-dimethylamino and water as precursors; based on the aluminum oxide thin film layer and the hafnium oxide thin film layer, N thin film pairs are obtained through deposition; n is a positive integer greater than or equal to 1; one aluminum oxide film layer and one hafnium oxide film layer form a film pair; and determining the N thin film pairs as flexible distributed Bragg reflectors. According to the preparation method, the reflectivity performance and the application performance of the distributed Bragg reflector are improved.

The invention relates to the technical field of Mini LED display, in particular to a sub-millimeter light-emitting diode and a preparation method thereof, and the method comprises the following steps: sequentially arranging a distributed Bragg reflector, a diffusion layer, a quantum dot layer and an organic silicon protection layer on a substrate covered with a pyrolysis film; carrying out wafer expansion on the GaN chip to be arranged at a specific distance through a blue film, and carrying out alignment bonding on the GaN chip and the substrate coated with the organic silicon protection layer; filling white wall glue between the channels of the GaN chips, and etching the division retaining walls, the organic silicon protection layer, the quantum dot layer, the diffusion layer and the DBR layer between the GaN chips to form the channels; a silicon nitride layer is deposited on the surface of the side wall of the channel through ALD or PECVD, and then the sub-millimeter light-emitting diode is obtained, packaging protection of the quantum dot layer is achieved by adopting an inorganic-organic material composite alternating mode, a strong barrier effect on water and oxygen is achieved, and high performance and high reliability of a device are guaranteed.

The invention relates to an integrated photonic device (100) configured for near-perfect second harmonic generation (SHG) at a resonant optical wavelength λ. The device includes a substrate (S), a first (101) and second (109) distributed Bragg reflector (DBR) made of alternating layers with different refractive indices (103, 105), and a monolayer of MoS2 (ML MoS2) as the nonlinear material sandwiched between identical insulating layers (102). The device utilizes a Fabry-Perot cavity configuration, enhancing the electric field at λ, ensuring maximum SHG efficiency. The phase matching condition is satisfied due to the sub-nm thickness of MoS2 layer of 0.62 nm. The device is an SHG device with an input at 1550 nm and an output at 775 nm, with SHG conversion efficiencies higher than 99%. Ultra high nonlinear susceptibility of MoS2 also optimizes SHG performance, and the device is therefore very efficient for photonic applications.