262 results about "Distributed Bragg reflector" patented technology

The invention relates to a method for accurately calibrating the quarter-wavelength layer thickness of a DBR (Distributed Bragg Reflector). The distributed Bragg reflector (DBR) is formed by alternately growing two materials with the optical thickness of 1 / 4 wavelength. The deviation of the thickness of the DBR enables the reflectivity of the DBR to be reduced, the bandwidth to be reduced and the reflection phase shift to be deviated. In order to accurately control the optical thickness of each layer of the DBR to be 1 / 4 wavelength, the invention provides two complementary resonant cavity comparison structures. By comparing the relative sizes of the cavity mode wavelengths of the two structures, whether the thickness of each layer of the DBR is 1 / 4 of the standard wavelength or not can be judged, and the thickness of each layer can be corrected to be 1 / 4 of the wavelength. The method makes up the defect that the conventional DBR reflection spectrum cannot accurately measure the thickness of each layer of the DBR, has the advantages of simplicity, accuracy and no damage compared with other thickness detection methods, is not only suitable for accurate calibration of the 1 / 4 layer thickness of the DBR, but also can be used for accurate characterization of the thickness of optical thin films made of other materials.

The present disclosure provides an AlGaInP-based red light emitting diode chip and a preparation method thereof, belonging to the field of optoelectronic manufacturing technology. The AlGaInP-based red light emitting diode chip includes: a substrate, a light emitting structure, a distributed Bragg reflector layer, a passivation layer, a first solder block and a second solder block; the light emitting structure, the distributed Bragg reflector layer and the passivation layer are sequentially stacked on the substrate, the passivation layer has a first through hole and a second through hole exposing the distributed Bragg reflector layer, the hole wall of the first through hole and the hole wall of the second through hole have a concave-convex structure; the first solder block is located in the first through hole and is in contact with the hole wall of the first through hole, and the second solder block is located in the second through hole and is in contact with the hole wall of the second through hole. The embodiment of the present disclosure can improve the problem of relative looseness between the solder block and the via hole, so that the light emitting structure is well fixed in the chip, and the reliability of the chip is improved.

An emitter includes a substrate; a current-blocking distributed Bragg reflector (DBR) arranged on the substrate, wherein the current-blocking DBR includes a plurality of p-n junctions connected vertically in series to form a bidirectional current-blocking structure; a bottom contact layer arranged on the current-blocking DBR; a bottom DBR arranged on the bottom contact layer; a top DBR arranged on the bottom DBR; an active region configured to generate a laser light, wherein the active region is arranged between the bottom DBR and the top DBR; a top contact layer arranged on the top DBR; and an optical output arranged over the top DBR, wherein the emitter is configured to emit the laser light via the optical output.

A light emitting device is a micro-scale light emitting device including a semiconductor stack, an insulation layer, and a metal reflection layer. The semiconductor stack includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. The insulation layer covers upper and side surfaces of the semiconductor stack. The metal reflection layer is disposed on the insulation layer, and covers at least a portion of the side surface of the semiconductor stack. The insulation layer includes a distributed Bragg reflector.

A display device according to an embodiment includes a lower substrate, a first bonding electrode disposed on the lower substrate, a first light emitting element disposed on the first bonding electrode, a second bonding electrode disposed on the first light emitting element, and a second light emitting element disposed on the second bonding electrode, the second bonding electrode includes a first distributed Bragg reflector including at least one pair of a first transparent conductive layer and a second transparent conductive layer having different refractive indices that are alternately stacked.

A semiconductor laser includes a distributed feedback (DFB) region including an active layer and a uniform grating and two distributed Bragg reflector (DBR) region including an core layer and a uniform grating and optically coupled to respective ends of the DFB region and lengths of the DFB region and the DBR regions in a waveguide direction are set so that a photon-photon resonance frequency is in a range from 40 GHz to 50 GHz when an operating temperature is between 25 degrees and 75 degrees. The semiconductor laser optimizes a PPR effect and enables maximizing a modulation bandwidth.

A method of determining the position and shape of a flexible arm robot having at least one distributed Bragg reflector integrated, the method comprising: moving the flexible arm robot through a series of movements; tracking the movements of the flexible arm robot and recording positional data of at least a section of the flexible arm robot as a ground truth and interrogating the distributed Bragg reflector during these movements; inputting the data from the interrogation of the distributed Bragg reflector and the camera into a machine learning algorithm; using the output of the machine learning algorithm to determine a calibration function for the position of the distributed Bragg reflector within the flexible arm robot; and applying the calibration function to software used to control the movement of the flexible arm robot.

The invention relates to a semiconductor device, e.g. for the emission or absorption of light, preferably in the deep ultraviolet (DUV) range. The device, e.g. a resonant cavity light emitting diode (RCLED) or a laser diode, is formed from: a substrate layer (302), preferably comprising a distributed Bragg reflector (DBR); a graphitic layer (304); and at least one semiconductor structure (310), preferably a wire or a pyramid, grown on the graphitic layer, with or without the use of a mask layer (306). The semiconductor structure is constructed from at least one III-V semiconductor n-type doped region (316) and a hexagonal boron-nitride (hBN) region (312), preferably being p-type doped hBN.

The invention discloses a colloidal quantum dot-based broadband super-radiation light-emitting diode and a preparation method thereof, belongs to the technical field of semiconductor devices, and solves the technical problem that the improvement of optical gain is limited due to insufficient spectrum regulation and control precision of colloidal quantum dots in the application of a super-radiation light-emitting diode in the prior art. The diode comprises a distributed Bragg reflector and a bar structure, wherein the bar structure is composed of an ITO cathode, an electron transport layer, a CQD active layer, a hole transport layer, a spacer layer, a current focusing structure layer, a hole injection layer and an Ag anode which are sequentially arranged from bottom to top and composed of the ITO cathode, the electron transport layer, the CQD active layer, the hole transport layer, the spacer layer and the current focusing structure layer; the distributed Bragg reflector is of a transverse Bragg reflection waveguide structure, and the structure comprises a plurality of pairs of alternating layers; the CQD active layer is filled with core-shell colloidal quantum dots; the spacing layer and the current focusing structure layer are of slit structures; and the Ag anode and the distributed Bragg reflector form a transverse cavity structure along the plane direction. The super-radiation light-emitting diode is suitable for the technical fields of broadband optical coherence tomography, gyroscope optical fiber sensing and the like.

A flip-chip light-emitting diode includes a first conductivity type semiconductor layer, a light-emitting layer, a second conductivity type semiconductor layer, a first transparent dielectric layer, a second transparent dielectric layer, and a distributed Bragg reflector (DBR) structure which are sequentially stacked. The first transparent dielectric layer has a thickness greater than λ / 2n1, wherein A is an emission wavelength of the light-emitting layer, n1 is a refractive index of the first transparent dielectric layer, n2 is a refractive index of the second transparent dielectric layer and is greater than n1, and n2 is lower than a refractive index of the second conductivity type semiconductor layer. A light-emitting apparatus including the aforesaid flip-chip light-emitting diode is also provided.

A dynamically tunable optical mirror named as a resonant cavity switching (RCS) device and a refractive index modulating (RIM) device are disclosed. The RCS device is comprising a nanoporous piezoelectric III-nitride material layer, such as GaN, AlN, AlScN, AlGaScN or their alloys sandwiched between a high-reflectivity distributed Bragg reflector (DBR) and a lower-reflectivity output DBR. The RIM devise is comprising the nanoporous III-nitride material layer. The nanoporous layer, patterned with interdigital transducers (IDTs), is actuated via surface acoustic waves (SAWs) or electric fields to induce rapid, reversible modulation of its effective refractive index. This enables sub-nanosecond switching between resonant and off-resonant optical states, facilitating efficient energy extraction, optical pulse carving, or phase control.

A modified distributed feedback (DFB) laser comprises a gain region with a distributed feedback grating and a back reflector that receives a portion of laser light generated by the gain region and the distributed feedback. The back reflector is a wavelength-selective reflector that retroreflects the portion of the received laser light back to the gain region, thereby stimulating single mode laser oscillation and / or improving a side mode suppression ratio (SMSR) of the laser light generated by the modified DFB laser. The spectral properties of the laser output by the modified DFB laser can be independent of position of a cleaved facet of the laser chip near a back end of the modified DFB laser and / or the performance of the modified DFB laser can be maintained over a large number of laser chips separated from a wafer.

A display device includes a light-emitting substrate, a counter substrate, multiple color conversion layers and, a patterned distributed Bragg reflector. The counter substrate is disposed opposite to the light-emitting substrate, and has multiple sub-pixel regions. Each of the sub-pixel regions has a sub-pixel width. The color conversion layers are disposed between the light-emitting substrate and the counter substrate. The patterned distributed Bragg reflector is disposed on one side of the color conversion layers, and has multiple openings. Each of the openings has an opening width greater than or equal to 1 μm and less than the sub-pixel width.

The present disclosure relates to a monolithically integrated dual-wavelength transmitter for a passive optical network (PON), which may be suitable for both a gigabit PON (GPON) and a 10-gigabit-PON (XG-PON). The integrated transmitter includes two distributed feedback (DFB) lasers, a first DFB laser to emit a continuous first laser beam at a first wavelength along an optical path, and a second DFB laser to emit a modulated second laser beam at a second wavelength along the optical path in the same direction as the first DFB laser. The transmitter also includes an electro-absorption modulator (EAM) after the first DFB laser in the optical path, which is configured to modulate the first laser beam, and a distributed Bragg reflector (DBR) between the EAM and the second DFB laser in the optical path, which is configured to transmit light at the first wavelength

This invention provides a semiconductor structure and its manufacturing method. The semiconductor structure includes a transparent substrate, an epitaxial structure, and a distributed Bragg reflector structure. The epitaxial structure is disposed on one side of the transparent substrate, and the distributed Bragg reflector structure is disposed on the back side of the transparent substrate opposite to the epitaxial structure. Visible light can substantially pass through the epitaxial structure, the transparent substrate, and the distributed Bragg reflector structure in a substantial sequence, but other light rays besides visible light can be substantially reflected back into the transparent substrate by the distributed Bragg reflector structure.

A self-mixing interferometry SMI laser sensor (1) comprises a vertical cavity surface emitting laser (10) (VCSEL) configured to emit laser radiation, the VCSEL comprising a first distributed Bragg reflector (11) (DBR), a second DBR (12), and a cavity region (13) comprising an active light generating region (13a), where the cavity region (13) is arranged in a layer structure between a front side of the first DBR (11) and a back side of the second DBR (12). Wherein at least one of the first and second DBRs (11, 12) comprises a first contrast region (14) and a second contrast region (15), the first contrast region (14) having a first refractive index contrast [Delta] n1 with respect to an emission wavelength of the VCSEL (10), and the second contrast region (15) having a second refractive index contrast [Delta] n2 / n greater than the first refractive index contrast [Delta] n1 / n.

Solid state lighting devices including light emitting diodes (LEDs), and more particularly, include a reflector for a support structure in an LED package (48). The support structure includes an arrangement of dielectric reflectors (18) relative to conductive traces (14) and LED chips (36) patterned on the submount (12). The dielectric reflector includes a plurality of dielectric layer structures that form a distributed Bragg reflector (DBR) or in some cases an aperiodic Bragg reflector. Such dielectric reflectors (18) may be disposed on one or more conductive traces (14) and on portions of the submount (12) that are not covered by the conductive traces to provide increased reflectance over various wavelengths provided by the LED chip, including wavelengths in the ultraviolet (UV) spectrum. Each disclosed LED package (34, 42, 44, 46, 48, 50, 52, 54, 56, 60, 62, 64) is also provided with a cover structure (38).

The invention discloses a VCSEL laser, which comprises at least one light emitting array, and each light emitting array comprises at least one light emitting unit. Each light-emitting unit sequentially comprises a first electrode, a first Bragg reflector, an active region, a second Bragg reflector and a second electrode from bottom to top, a tunnel junction is arranged between the first Bragg reflector and the second Bragg reflector, and the second Bragg reflector is an N-type doped DBR. An N-type doped distributed Bragg reflector (N-DBR) is adopted as a second Bragg reflector, and the electro-optical conversion efficiency of the device is remarkably improved through optimization of carrier transport characteristics. Compared with the problem that the ohmic contact resistance is too high due to the fact that a traditional P-type DBR is limited by low hole mobility, the high electron mobility of an N-type material can effectively reduce the series resistance of a reflector area, and therefore Joule heat is greatly reduced.

A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.

In an example, the present invention provides a laser system. The laser system has a source laser (e.g., CBC) coupled to first mirror device opposing a second mirror device and configured to generate a resonating laser beam between the first mirror and the second mirror. In an example, the system has a piezoelectric device configured to the second mirror device and characterized by a refractive e index such that one or more voids is changed by applying an energy to the piezo electric device to cause a change in a value of the refractive index, e.g., by more than 0.0001, to allow the resonating laser beam or a portion of the resonating laser to traverse through a portion of the second mirror device.

The present application provides a laser epitaxial structure and a method for preparing a vertical cavity surface emitting laser, which relate to the field of laser technology and include a substrate, and a bottom N-type distributed Bragg reflector, a quantum well, a P-type distributed Bragg reflector, a tunnel junction, and a top N-type distributed Bragg reflector stacked in sequence on the substrate, or a bottom N-type distributed Bragg reflector, a tunnel junction, a P-type distributed Bragg reflector, a quantum well, and a top N-type distributed Bragg reflector stacked in sequence on the substrate. Thus, by adding a tunnel junction to the laser epitaxial structure, a device structure of dual N-type distributed Bragg reflectors can be formed, and then a device structure of dual N-type metal layers can be formed, so that the performance of the device in terms of carrier mobility and overall electrical efficiency is improved, and at the same time, the heat dissipation of the device can be improved.

A QCL includes a gain region that generates radiation. An optical waveguide feeds the radiation back to the gain region. A first order and / or a second order Bragg reflector are formed in the optical waveguide. The first order Bragg reflector narrows a spectrum of the radiation. The second order Bragg reflector outcouples the radiation through a large facet.

Optoelectronic light emitting devices are provided with directly bonded circuitry, such as control or driver circuitry. The optoelectronic light emitting devices incorporate distributed Bragg reflector (DBR) layers that can be tuned to reflect the light of a particular wavelength, and that facilitate direct bonding and electrical contact between optoelectronic light emitting device substrates (wafers or dies) and control circuitry. In some embodiments the DBR layers provide direct bonding interfaces, such as hybrid bonding surfaces.

The invention relates to a nonlinear optical crystal cavity and a preparation method thereof. The nonlinear optical crystal cavity comprises at least two layers of Van der Waals material layers which are arranged in a stacked mode and spaced, and the materials of the Van der Waals material layers comprise Van der Waals materials with center inversion asymmetry; the optical resonant cavity comprises two layers of distributed Bragg reflectors which are oppositely arranged, and the two layers of distributed Bragg reflectors are arranged on the two surfaces of the outermost side in the stacking direction of the Van der Waals material layer respectively; the driving assembly is connected to the Van der Waals material layers, and the driving assembly is used for adjusting the rotating angle between the adjacent Van der Waals material layers and the interval between the adjacent Van der Waals material layers. The nonlinear optical crystal cavity provided by the invention has the capabilities of adjustable function and wide-band working, and can realize high nonlinear conversion efficiency under different wavelengths at the same time.

[Object] To provide a vertical cavity surface emitting laser device and a vertical cavity surface emitting laser device array that use a GaAs substrate and have excellent light emission efficiency and reliability.[Solving Means] A vertical cavity surface emitting laser device according to the present technology includes: a substrate; and a light-emitting unit. The substrate is formed of InxGa1-xAs (x is 0.005 or more and 0.015 or less) and has a carrier concentration of less than 5×1017 / cm3. The light-emitting unit includes a first distributed Bragg reflector (DBR) that is formed on the substrate and reflects light having a specific wavelength, a second DBR that reflects light having the wavelength, and an active region that is disposed between the first DBR and the second DBR and generates light emission due to carrier recombination.

In one aspect, the disclosure relates to micro-LED based AR displays combining stacked red, green, and blue LEDs, distributed Bragg reflectors, and diffractive optics; methods of making the same; and augmented reality displays using the same. In one aspect, the light generated by the LEDs is reflected within the optical cavity of DBR / LED / DBR, creating a highly directional (Δθ≤±5°) and monochromatic (FWHM≤5≤nm) blue light. In an aspect, the luminance of the disclosed inorganic-based micro-LEDs is orders of magnitude higher than that of organic LEDs while also providing high directionality and monochromaticity, leading to higher image quality. In a further aspect, the small size of the disclosed light source and combiner allows a much more compact and light-weight AR device to be constructed.

A vertical resonator surface-emitting semiconductor laser (VCSEL), wherein the VCSEL comprises a first mirror region forming a lower distributed Bragg reflector and a second mirror region forming an upper distributed Bragg reflector, the upper distributed Bragg reflector and the lower distributed Bragg reflector defining a vertical resonator having an inner region and an outer region. The VCSEL further comprises a resistive structure having a resistive section in the outer region and an etched section in the inner region of the vertical resonator, such that a conductive channel is formed in the inner region.

A vertical-cavity surface-emitting laser (VCSEL) emitter device includes a highly-doped cap layer; and a stacked structure comprising a top surface and an edge region. The highly-doped cap layer is arranged on the top surface. The stacked structure includes a bottom distributed Bragg reflector (DBR) mirror; a top DBR mirror; an active area arranged between the top DBR mirror and the bottom DBR mirror and configured to generate laser light; and at least one oxide layer, wherein an oxide aperture is formed through the at least one oxide layer for current confinement and optical index guiding. An isolation trench is arranged at the edge region, wherein the isolation trench extends through the highly-doped cap layer and into the stacked structure, including partially into the bottom DBR mirror, and wherein the isolation trench is configured to block current from spreading into the edge region via the highly-doped cap layer.

The application relates to a surface enhanced Raman scattering (SERS) substrate, a preparation method and application thereof, and belongs to the technical field of Raman spectrum detection. The substrate comprises, from bottom to top, a substrate layer, a distributed Bragg reflector, a chalcogen phase change material functional layer and a nanoscale metal structure layer. The distributed Bragg reflector is composed of a periodic structure stack of medium materials with different refractive indexes. The distributed Bragg reflector is coupled with the nanoscale metal structure layer to excite a Tamm state. The chalcogen phase change material functional layer can realize reversible regulation of amorphous state and crystalline state under external light excitation, changes the Tamm state resonance wavelength to regulate the SERS enhancement effect. The application realizes high-sensitivity detection through double enhancement of the Tamm state and localized surface plasmon resonance, has the characteristics of non-volatility, reconfigurability, high reproducibility and design flexibility, is convenient to operate, stable in performance, and is suitable for fields of chemical biological sensing, laboratory chip systems and optical encryption.

The invention relates to the technical field of semiconductor display, and discloses a Micro-LED micro display chip and a manufacturing process thereof. A bonding metal layer is arranged at the top of the lower substrate; a metal reflector is arranged at the top of the bonding metal layer; a distributed Bragg reflector is arranged at the top of the metal reflector; a first indium tin oxide layer is laid on the top of the distributed Bragg reflector; an LED epitaxial assembly is arranged at the top of the first indium tin oxide layer; and a second indium tin oxide layer is laid on the other side of the LED epitaxial assembly. The middle parts of the metal reflector, the distributed Bragg reflector, the first indium tin oxide layer and the LED epitaxial assembly are respectively provided with an optical resonance region and an MESA region. By arranging the composite reflection structure and the LED epitaxial assembly to form an optical resonant cavity, light emission in the vertical direction is enhanced, and the light output power of the chip is remarkably improved; meanwhile, the passivation layer on the side wall effectively inhibits the surface leakage current.