113 results about "Silicon photonics" patented technology

A co-packaged electro-optical module includes: a first planar light circuit (PLC) block; a silicon photonics chip electrically coupled to one or more chips; a splitter embedded in the first PLC block and to receive laser light from an optical fiber, to split the laser light into two portions, and to provide respective portions of the laser light to two planar waveguides; a planar surface of the silicon photonics chip to receive the portions of the laser light from the two planar waveguides in a direction perpendicular to the planar surface; modulators embedded in the silicon photonics chip and to modulate the portions of the laser light; a side edge of the silicon photonics chip extending perpendicular to the planar surface and to output the modulated portions of the laser light; and a second PLC block coupled to the side edge and to transmit the modulated portions of the laser light.

A device having a hybrid silicon photonic-on-glass substrate is provided. The device includes a glass substrate having a plurality of through-glass vias (TGVs), an oxide layer, and metal contacts coupled with the TGVs. The device also includes a silicon photonic layer having metal pads and an oxide layer. The metal pads are bonded with the metal contacts and the oxide layer of the silicon photonic layer is bonded with the oxide layer of the glass substrate such that the silicon photonic layer is hybrid bonded to the glass substrate by a metal-to-metal, oxide-to-oxide hybrid bond. Methods of assembly are also provided.

An optical communication system includes a transceiver device and a passive multiplexer and demultiplexer (PMAD). The transceiver device transmits or receives optical signals. The PMAD has a Mach-Zehnder interferometer structure, is connected to the transceiver device, and operates as a passive multiplexer or a passive demultiplexer. The PMAD includes: a first arm including a first waveguide, the first arm having a first dimension; a second arm including i) a second waveguide, and ii) a third waveguide, the second waveguide having a second dimension, the third waveguide having a third dimension, the second dimension being based on the first dimension and finely adjusts at least one performance parameter of the passive multiplexer and demultiplexer, and the third dimension being based on the first dimension and coarsely adjusts the at least one performance parameter; and a splitter and a coupler that propagate the optical signals.

Silicon Photonics is a candidate technology for adding integrated optics functionality, either passive or active optical waveguides) to integrated circuits by leveraging the economies of scale of the CMOS microelectronics industry and using materials for the waveguide core such as silicon nitride (SiXNY) and silicon oxynitride (SiOXN1-X) for example. Microelectromechanical systems (MEMS) provide for movable platforms relative to the substrate allowing additional functionality to be added to a silicon circuit but also Silicon Photonics. Accordingly, by combining “fixed” waveguides formed upon the substrate with “movable” waveguides formed upon one or more movable platforms the inventors have established a series of Integrated Optics MEMS (IO-MEMS) based on Silicon Photonics. Such IO-MEMS include optical switches, optical attenuators, optical gates, optical switch matrices, configurable wavelength division multiplexer / demultiplexer devices, etc. exploiting both platforms and deformable beams.

A method of wavelength tuning in a silicon photonics circuit includes receiving a bus waveguide, a ring resonator optically coupled to the bus waveguide, and a dielectric layer over the bus waveguide and over the ring resonator. The method further includes performing a first heat process at a first temperature to heat up the dielectric layer, where the first heat process shifts an initial resonance wavelength of the ring resonator to a first resonance wavelength shorter than the initial resonance wavelength. The first heat process permanently shifts the initial resonance wavelength to the first resonance wavelength, the first resonance wavelength being a wavelength when no heat is being applied to the ring resonator.

An electro-optical device is disclosed. The device includes a glass substrate having a plurality of through-glass vias. The device also includes a photonic integrated circuit hybrid bonded to the glass substrate by way of a metal-to-metal, oxide-to-oxide hybrid bond. The PIC has a plurality of through-silicon vias that are coupled with the through-glass vias. The device also includes an electronic integrated circuit coupled with the photonic integrated circuit. A method of assembling a device, or a plurality of devices, is also disclosed.

A first electrode bonding pad is arranged on the upper surface of a heat sink, an N electrode of a DFB chip is attached to the first electrode bonding pad, a second electrode bonding pad is arranged at the position, behind the DFB chip, of the heat sink, a P electrode of an MPD chip is attached to the second electrode bonding pad, a photosensitive surface and a first N electrode are sequentially arranged on the MPD chip in the direction away from the DFB chip, and a second electrode bonding pad is arranged at the position, behind the second electrode bonding pad, of the MPD chip. The P electrode of the DFB chip is provided with a plurality of first gold threads which are distributed side by side, the first gold threads stride across the photosensitive surface and then are routed on the first N electrode of the MPD chip, and backlight of the DFB chip is reflected on the photosensitive surface of the MPD chip through the arc-shaped first gold threads. A CPO silicon light engine comprises a high-power light source COC. The MPD chip has the beneficial effects that the backlight of the DFB chip is reflected on the photosensitive surface of the MPD chip by adopting the first gold wire for supplying power to the DFB chip, so that the MPD chip finishes monitoring the optical power of the DFB chip, and the cost is reduced.

The utility model discloses a composite multimode waveguide structure, which belongs to the technical field of optoelectronic devices and comprises a plasmon unit made of a metal material or a material with a negative real part dielectric function. The plasmon unit is structurally characterized by comprising nanoparticles, nanowires, nanopore arrays or gradient structures; the dielectric waveguide is made of a semiconductor material with a high refractive index, and the dielectric waveguide is designed to be one of a strip-shaped waveguide, a ridge-shaped waveguide or a slit waveguide; and the substrate layer is located below the plasmon unit and the dielectric waveguide and comprises at least one low-refractive-index supporting layer, and the material system of the low-refractive-index supporting layer is one of an oxide material, a nitride material, a fluoride material or a composite substrate structure. According to the scheme, the contradiction of a plasma device and silicon photonics among mode degree of freedom, loss and process compatibility is solved.

This application provides a silicon photonics thin-film lithium niobate hybrid integrated optoelectronic chip, its fabrication method, and a system, relating to the field of optoelectronics technology. Based on a thin-film lithium niobate platform, multiple thin-film lithium niobate modulators are fabricated on a thin-film lithium niobate wafer, and qualified thin-film lithium niobate modulator chips are selected. Based on a silicon photonics process platform, optoelectronic device structures other than the modulators are fabricated on a silicon photonics wafer, and a wafer map is generated to identify the locations of qualified chips. A transition structure with dimensions matching the silicon photonics wafer is then provided. The silicon photonics wafer and the transition structure are assembled to form a composite wafer. Based on the wafer map, qualified thin-film lithium niobate modulator chips are transferred and mounted one by one onto the composite wafer, and optical and electrical connections are completed. Finally, the mounted composite wafer is sliced ​​and tested to obtain the silicon photonics thin-film lithium niobate hybrid integrated optoelectronic chip. The solution provided in this application has the advantages of good process compatibility, high yield, and low cost.

This invention belongs to the field of communication network convergence technology and discloses a protective wavelength spacing configuration method and a QKD and OTN co-fiber transmission system. The system includes: a QKD transmitter, a synchronous negotiation transmission unit, an OTN transmitter, a first silicon photonics integrated wavelength division multiplexing chip, a common transmission optical fiber, a second silicon photonics integrated wavelength division multiplexing chip, a QKD receiver, a quantum optical detection unit, a synchronous negotiation receiving unit, an OTN service receiving unit, and a control and management module. The control and management module executes the protective wavelength spacing configuration method. Compared with existing technologies, this invention, through the protective wavelength spacing configuration method, can dynamically determine the isolation distance based on bandwidth, temperature drift, filter roll-off, and safety margin, reducing the probability of crosstalk and Raman scattering noise from adjacent channels entering the quantum receiving window. It also makes linked decisions based on bit error rate, key generation rate, receiver count rate, OTN bit error rate, optical power, chip temperature, and alarm information, improving the adaptive capability of the co-fiber system.

The invention discloses a non-polishing low-loss coupling optical fiber array adaptive to a deep silicon etching photon chip, a deep silicon etching photon chip coupling assembly and a method, and belongs to the technical field of silicon photon integration. The device comprises an optical fiber array main body, a V-shaped groove substrate and a special-shaped cover plate, the special-shaped cover plate is attached to the upper surface of the V-shaped groove substrate, an avoiding groove is formed in the position, corresponding to a deep silicon etching area of the end face of the chip, of the special-shaped cover plate, and the depth of the avoiding groove is not smaller than the total height of a residual step on the end face of the chip and a deep groove protruding structure so as to eliminate mechanical interference. The tail end of the optical fiber is positioned in the V-shaped groove, and the light-emitting end face is parallel and tightly butted with the end face of the chip. The customized avoiding groove is integrated in the cover plate, direct, lossless and low-loss coupling of the optical fiber array and the deep silicon etching silicon optical chip with the composite three-dimensional morphology end face can be achieved without extending the optical fiber, removing a bottom cover or polishing the end face of the chip, the integrity of the end face of the chip is effectively protected, and the coupling precision and the device yield are improved.

The invention provides a micro-ring modulator and a silicon optical chip, the micro-ring modulator comprises an annular waveguide and a strip-shaped waveguide, and the annular waveguide is arranged at one side of the strip-shaped waveguide; the strip-shaped waveguide receives input light, the annular waveguide is coupled with the strip-shaped waveguide, the annular waveguide receives coupling input light of the strip-shaped waveguide, and the coupling input light is transmitted along a path of the annular waveguide; the annular waveguide is provided with a first part close to the strip-shaped waveguide and a second part far away from the strip-shaped waveguide, the first part has a first width, the second part has a second width, the first width is smaller than the second width, and the width of the annular waveguide is gradually increased from the first part to the second part. The silicon optical chip is applied to the micro-ring modulator, process errors can be resisted, and the performance stability of the micro-ring modulator is ensured.

A package for a silicon photonics device and an implementation method thereof are disclosed. The package for a silicon photonics device according to one embodiment includes a step difference control part having an upper surface, where a silicon photonics device platform having a silicon photonics device mounted thereon is mounted, and configured to control a step difference generated between the silicon photonics device platform and one or more functional electronic devices mounted on an upper surface of a board and a body part configured to transfer heat transferred through the step difference control part and heat transferred through a lower surface of the board to the outside by mounting the step difference control part on at least a partial region of an upper surface thereof and bringing the lower surface of the board into close contact with at least a part of the remaining region except for the partial region.

Provided in the present disclosure are a silicon photonics wafer test apparatus and a test method therefor, and a silicon photonics wafer test system. The silicon photonics wafer test apparatus comprises a camera assembly and a deflection optical path assembly; a prober for carrying a silicon photonics wafer; a fiber coupling module; and a driving assembly. When the driving assembly moves the silicon photonics wafer into the imaging field of view of the camera assembly, the camera assembly is adjusted such that the coordinate system is parallel to scribe lines of the silicon photonics wafer; when the driving assembly moves the deflection optical path assembly into the imaging field of view of the camera assembly, the camera assembly captures lateral images of a fiber end from at least two different directions via the deflection optical path assembly. The fiber coupling module is used for adjusting the pose of the fiber end on the basis of the lateral images and the direction of the coordinate system of the camera assembly, enabling initial alignment between the fiber end and the silicon photonics wafer. The present disclosure reduces the operational difficulty of alignment coupling between the fiber end and a silicon photonics waveguide, thereby simplifying the apparatus structure and reducing apparatus costs.

Silicon Photonics is a candidate technology for adding integrated optics functionality, either passive or active optical waveguides) to integrated circuits by leveraging the economies of scale of the CMOS microelectronics industry and using materials for the waveguide core such as silicon nitride (SiXNY) and silicon oxynitride (SiOXN1-X) for example. Microelectromechanical systems (MEMS) provide for movable platforms relative to the substrate allowing additional functionality to be added to a silicon circuit but also Silicon Photonics. Accordingly, by combining “fixed” waveguides formed upon the substrate with “movable” waveguides formed upon one or more movable platforms the inventors have established a series of Integrated Optics MEMS (IO-MEMS) based on Silicon Photonics. Such IO-MEMS include optical switches, optical attenuators, optical gates, optical switch matrices, configurable wavelength division multiplexer / demultiplexer devices, etc. exploiting both platforms and deformable beams.

A LIDAR sensor system for a vehicle includes a silicon photonics substrate. The silicon photonics substrate includes: a semiconductor wafer; one or more surface features on a first surface of the semiconductor wafer; and a photoresist layer formed on the first surface of the semiconductor wafer, wherein the photoresist layer includes a laminated dry film. The silicon photonics substrate can be manufactured by obtaining a semiconductor wafer having one or more surface features; applying a dry film photoresist layer to a first surface of the semiconductor wafer; performing an adhesion bake process on the semiconductor wafer; developing the dry film photoresist layer to produce one or more developed regions in the dry film photoresist layer; and forming one or more solder bumps in the one or more developed regions.

This application provides a method, system, electronic device, and storage medium for determining silicon photonics bias voltage, relating to the field of optical communication technology. The method includes: acquiring at least four pre-set sampling voltages and sequentially applying each sampling voltage to the heating element of a silicon photonics modulator; acquiring the output power of the silicon photonics modulator under each sampling voltage; fitting and generating a response curve between voltage and output power based on the multiple sampling voltages and the corresponding output power; determining a target voltage corresponding to a preset operating state based on the response curve between voltage and output power, and using the target voltage as the operating bias voltage of the silicon photonics modulator under the preset operating state, achieving high-precision, adaptive bias voltage tracking, greatly improving the production efficiency of optical modules, and being simple and reliable.

Silicon photonics adds optical functionality to electronic integrated circuits allowing leveraging CMOS fabrication processes, integration of CMOS electronics discretely and integration of microelectromechanical systems (MEMS) or Micro-Opto-Electro-Mechanical-Systems (MOEMS) elements. Further, silicon photonics allows hybrid or monolithic integration of semiconductor photodetectors in conjunction with the passive silicon photonics and active elements such as semiconductor optical amplifiers (SOAs). Accordingly, it would be beneficial to provide network designers with silicon photonic optical emitters and transmitters for wavelength division multiplexed networks which can dynamically transmit on one or more channels whilst addressing the inherent issues that silicon photonics and other optical waveguide technologies exhibit for hybrid integration of SOAs and passive photonics.

The present invention relates to an optical system-in-package and an optical module using same, wherein a laser diode can be packaged together with a silicon photonics chip and an electronic IC in the O-SiP, thereby implementing a short signal line and implementing a structure with integrated optical / electronic elements at a semiconductor package level. The optical system-in-package of the present invention comprises: a mold body having a first surface and a second surface; a laser diode arranged in or outside the mold body; a photonic IC which is molded inside the mold body, receives an optical signal, input from the laser diode through an input waveguide connected to an input side, and has multiple output waveguides connected to an output side; an electronic IC molded in the mold body; a fiber array unit molded in the mold body; and a redistribution layer which is formed on the first surface of the mold body and on which multiple external connection terminals are disposed.

This invention discloses a bidirectional continuous-variable quantum key distribution method and system based on frequency division duplexing in a single-transceiver ring network. The method is based on a monolithically integrated silicon photonics transceiver chip. By pre-setting optical carrier frequency offsets for the forward and reverse links, it isolates the quantum signal from Rayleigh backscattering noise in the fiber in the frequency domain. The transmitting end generates a broadband waveform containing quantum signals and pilot signals, which is transmitted bidirectionally through a single optical fiber. The receiving end uses a laser source from the same chip as the local oscillator for coherent heterodyne detection. A digital signal processing module performs orthogonalization correction, phase recovery, and matched filtering to suppress noise and extract the quantum signal to generate a secure key. This invention solves the problems of inflexible networking, low fiber utilization, and severe scattering noise interference in bidirectional transmission over a single fiber caused by the separation of the transmitting and receiving ends in integrated continuous-variable quantum key distribution systems. It provides a low-cost and highly flexible solution for metropolitan quantum ring networks.

A silicon photonics circuit is configured of a support substrate, an underclad formed on one side of the support substrate, a core which is in contact with a side of the underclad opposite to the side which is in contact with the support substrate and is formed of a member containing silicon, a pattern structure which is in contact with the core, matches a shape and a size of the core in a top view, and is formed of a member having a lower refractive index than the core, and a heater which heats the core to change a refractive index of light in the core.

The invention discloses silicon optical semiconductor packaging equipment with an ejection function, and relates to the technical field of semiconductor packaging, gas flows out through a large launder, a conical groove, a small launder and a second launder, after the gas enters from the large launder, due to the fact that the space of the large launder is large, the large launder can accommodate more gas to rapidly flow in, and then the gas enters the conical groove; the unique shape of the conical groove enables the channel to be narrowed gradually, and gas is accelerated at the channel. Finally, the air is sprayed out from the small flow groove at a high speed to form strong airflow, the airflow acceleration process enables the air spraying moving assembly to obtain large enough power in a short time, acting force is rapidly applied to the packaged silicon optical semiconductor, rapid ejection is achieved, the time needed by ejection operation is greatly shortened, and the guided airflow is high in efficiency. According to the utility model, the airflow is uniformly sprayed from the small launder, and the uniform airflow acts on the silicon photosemiconductor, so that the stress on the silicon photosemiconductor can be uniformly distributed, and the problems of inclination, overturning or damage and the like of a device caused by overlarge local stress are avoided.

A coherent optical transmitter includes circuitry connected to a coherent modulator; and a plurality of tunable optical filters (TOFs) connected to one another and connected to an output of the coherent modulator, wherein the plurality of tunable optical filters are configurable to create an effective transfer function having a variable width. The TOFs are cascaded and can be included in discrete form on electro-optic printed circuit boards (PCBs), or integrated in various electro-optic material systems such as in silicon photonics, photonic integrated circuits (PICs), as well as hybrid and other approaches. The advantage of this approach includes improved OSNR in colorless transmitters.

Silicon photonics technologies adds integrated optics functionality to CMOS integrated circuits thereby leveraging high volume manufacturing. Independent of geometry or technology these silicon photonic devices require packaging with single mode optical fibers to interface to the optical network and / or co-packaging with active semiconductor devices, discrete microoptoelectromechanical systems (MOEMS)s or monolithically integrated MOEMS. Stringent performance constraints and minimizing manufacturing costs / times are consistent demands on such photonic circuits. Accordingly, there is a demand for low-cost and low-loss optical coupling technologies for packaging that can easily be scaled for mass production that overcome limitations in the prior art. The inventors have established design methodologies, packaging schemes and component designs that leverage automated passive assembly techniques for speed / cost in combination with directly written optical interconnects that allow for offsetting the losses that would arise from the manufacturing tolerances of these passive assembly techniques.

A silicon photonic device includes a substrate formed from a silicon-containing material and patterned to comprise a first waveguide and a second waveguide defining a first trench extending between the first waveguide and the second waveguide. The first waveguide and second waveguide have upper surfaces exposed for bonding to an epitaxially grown layer. The first trench being exposed to the epitaxially grown layer. A support structure is formed within the first trench and extends upward to an upper surface at a height of the upper surfaces of the first waveguide and second waveguide. The support structure is optically non-functional.

This invention provides an end-face coupler and a silicon photonics chip. The end-face coupler includes a substrate layer, a first coupling unit, and a second coupling unit. The first coupling unit is disposed above the substrate layer, and the second coupling unit is disposed above the first coupling unit. The substrate layer is composed of silicon. The first coupling unit includes a silicon dioxide cladding layer. Multiple silicon nitride waveguide groups are arranged at intervals along a first direction in the silicon dioxide cladding layer. Each silicon nitride waveguide group has multiple silicon nitride waveguides arranged at intervals along a second direction, wherein the second direction is the input light propagation direction and is perpendicular to the first direction. The second coupling unit is composed of silicon nitride. The silicon photonics chip uses the above-described end-face coupler. This invention can receive input light spots of various shapes and has multiple controllable parameters, providing a high degree of freedom in mode spot control.

A method of fabricating a photonics stack includes providing a silicon photonics structure (302, 362) including a silicon substrate (306, 366), an oxide layer (308, 368), and an epitaxial silicon layer (310, 370) having one or more active devices (128, 228). The method also includes providing an interposer structure (106, 206, 304, 364) and attaching the silicon photonics structure and the interposer structure. The method further includes removing the silicon substrate from the silicon photonics structure and removing at least a portion of the oxide layer from the silicon photonics structure. Additionally, the method includes disposing a thin-film lithium niobate coupon (104, 204, 320, 380) on or within the silicon photonics structure and encapsulating the thin-film lithium niobate coupon with an optical material (108, 208, 332, 392).

The present invention provides an electronic device having a quantum photonic integrated circuit (QuPIC) including a photonsource, a photon detector and an optical waveguide configured for guiding the photons from the source to the detector.

According one embodiment of the present disclosure, there is provided a silicon photonics-based optical modulation device having two metal layers. The optical modulation device includes a phase shifter, a ground unit, and a pad unit. The phase shifter includes a first signal electrode, a second signal electrode, and at least two ground electrodes formed in a first metal layer. The phase shifter includes two silicon optical waveguides. The ground unit is formed in a second metal layer different from the first metal layer. The pad unit is formed in the second metal layer, provided with a first local area electrically connected to the ground unit, and electrically connected to the first signal electrode and the second signal electrode via a second local area thereof electrically isolated from the ground unit.

This invention provides a silicon photonics modulator control circuit and a silicon photonics communication module. The control circuit includes a directly connected digital signal processing chip and a silicon photonics modulation chip, and a heater control circuit, a bias voltage circuit, and a floating power supply circuit connected to the silicon photonics modulation chip. The heater control circuit includes a first CMOS operational amplifier; the bias voltage circuit includes a regulated charge pump converter and a second CMOS operational amplifier; the first CMOS operational amplifier, the regulated charge pump converter, and the second CMOS operational amplifier are all connected to an analog microcontroller integrating multi-channel power management and temperature control. The first CMOS operational amplifier and the second CMOS operational amplifier are also connected to the silicon photonics modulation chip. The floating power supply circuit includes a grounding capacitor. This invention uses an analog microcontroller as a base, combined with amplifiers to achieve heating control, meeting the high current requirements of heating. The direct drive of the modulation chip and backflow prevention, achieved with the charge pump converter, amplifier, and grounding capacitor, reduce cost and power consumption.