69 results about "Silicon photonics" patented technology

The utility model discloses a composite multimode waveguide structure, which belongs to the technical field of optoelectronic devices and comprises a plasmon unit made of a metal material or a material with a negative real part dielectric function. The plasmon unit is structurally characterized by comprising nanoparticles, nanowires, nanopore arrays or gradient structures; the dielectric waveguide is made of a semiconductor material with a high refractive index, and the dielectric waveguide is designed to be one of a strip-shaped waveguide, a ridge-shaped waveguide or a slit waveguide; and the substrate layer is located below the plasmon unit and the dielectric waveguide and comprises at least one low-refractive-index supporting layer, and the material system of the low-refractive-index supporting layer is one of an oxide material, a nitride material, a fluoride material or a composite substrate structure. According to the scheme, the contradiction of a plasma device and silicon photonics among mode degree of freedom, loss and process compatibility is solved.

This application provides a silicon photonics thin-film lithium niobate hybrid integrated optoelectronic chip, its fabrication method, and a system, relating to the field of optoelectronics technology. Based on a thin-film lithium niobate platform, multiple thin-film lithium niobate modulators are fabricated on a thin-film lithium niobate wafer, and qualified thin-film lithium niobate modulator chips are selected. Based on a silicon photonics process platform, optoelectronic device structures other than the modulators are fabricated on a silicon photonics wafer, and a wafer map is generated to identify the locations of qualified chips. A transition structure with dimensions matching the silicon photonics wafer is then provided. The silicon photonics wafer and the transition structure are assembled to form a composite wafer. Based on the wafer map, qualified thin-film lithium niobate modulator chips are transferred and mounted one by one onto the composite wafer, and optical and electrical connections are completed. Finally, the mounted composite wafer is sliced ​​and tested to obtain the silicon photonics thin-film lithium niobate hybrid integrated optoelectronic chip. The solution provided in this application has the advantages of good process compatibility, high yield, and low cost.

This invention belongs to the field of communication network convergence technology and discloses a protective wavelength spacing configuration method and a QKD and OTN co-fiber transmission system. The system includes: a QKD transmitter, a synchronous negotiation transmission unit, an OTN transmitter, a first silicon photonics integrated wavelength division multiplexing chip, a common transmission optical fiber, a second silicon photonics integrated wavelength division multiplexing chip, a QKD receiver, a quantum optical detection unit, a synchronous negotiation receiving unit, an OTN service receiving unit, and a control and management module. The control and management module executes the protective wavelength spacing configuration method. Compared with existing technologies, this invention, through the protective wavelength spacing configuration method, can dynamically determine the isolation distance based on bandwidth, temperature drift, filter roll-off, and safety margin, reducing the probability of crosstalk and Raman scattering noise from adjacent channels entering the quantum receiving window. It also makes linked decisions based on bit error rate, key generation rate, receiver count rate, OTN bit error rate, optical power, chip temperature, and alarm information, improving the adaptive capability of the co-fiber system.

The invention discloses a non-polishing low-loss coupling optical fiber array adaptive to a deep silicon etching photon chip, a deep silicon etching photon chip coupling assembly and a method, and belongs to the technical field of silicon photon integration. The device comprises an optical fiber array main body, a V-shaped groove substrate and a special-shaped cover plate, the special-shaped cover plate is attached to the upper surface of the V-shaped groove substrate, an avoiding groove is formed in the position, corresponding to a deep silicon etching area of the end face of the chip, of the special-shaped cover plate, and the depth of the avoiding groove is not smaller than the total height of a residual step on the end face of the chip and a deep groove protruding structure so as to eliminate mechanical interference. The tail end of the optical fiber is positioned in the V-shaped groove, and the light-emitting end face is parallel and tightly butted with the end face of the chip. The customized avoiding groove is integrated in the cover plate, direct, lossless and low-loss coupling of the optical fiber array and the deep silicon etching silicon optical chip with the composite three-dimensional morphology end face can be achieved without extending the optical fiber, removing a bottom cover or polishing the end face of the chip, the integrity of the end face of the chip is effectively protected, and the coupling precision and the device yield are improved.

The invention provides a micro-ring modulator and a silicon optical chip, the micro-ring modulator comprises an annular waveguide and a strip-shaped waveguide, and the annular waveguide is arranged at one side of the strip-shaped waveguide; the strip-shaped waveguide receives input light, the annular waveguide is coupled with the strip-shaped waveguide, the annular waveguide receives coupling input light of the strip-shaped waveguide, and the coupling input light is transmitted along a path of the annular waveguide; the annular waveguide is provided with a first part close to the strip-shaped waveguide and a second part far away from the strip-shaped waveguide, the first part has a first width, the second part has a second width, the first width is smaller than the second width, and the width of the annular waveguide is gradually increased from the first part to the second part. The silicon optical chip is applied to the micro-ring modulator, process errors can be resisted, and the performance stability of the micro-ring modulator is ensured.

A package for a silicon photonics device and an implementation method thereof are disclosed. The package for a silicon photonics device according to one embodiment includes a step difference control part having an upper surface, where a silicon photonics device platform having a silicon photonics device mounted thereon is mounted, and configured to control a step difference generated between the silicon photonics device platform and one or more functional electronic devices mounted on an upper surface of a board and a body part configured to transfer heat transferred through the step difference control part and heat transferred through a lower surface of the board to the outside by mounting the step difference control part on at least a partial region of an upper surface thereof and bringing the lower surface of the board into close contact with at least a part of the remaining region except for the partial region.

Provided in the present disclosure are a silicon photonics wafer test apparatus and a test method therefor, and a silicon photonics wafer test system. The silicon photonics wafer test apparatus comprises a camera assembly and a deflection optical path assembly; a prober for carrying a silicon photonics wafer; a fiber coupling module; and a driving assembly. When the driving assembly moves the silicon photonics wafer into the imaging field of view of the camera assembly, the camera assembly is adjusted such that the coordinate system is parallel to scribe lines of the silicon photonics wafer; when the driving assembly moves the deflection optical path assembly into the imaging field of view of the camera assembly, the camera assembly captures lateral images of a fiber end from at least two different directions via the deflection optical path assembly. The fiber coupling module is used for adjusting the pose of the fiber end on the basis of the lateral images and the direction of the coordinate system of the camera assembly, enabling initial alignment between the fiber end and the silicon photonics wafer. The present disclosure reduces the operational difficulty of alignment coupling between the fiber end and a silicon photonics waveguide, thereby simplifying the apparatus structure and reducing apparatus costs.

Silicon Photonics is a candidate technology for adding integrated optics functionality, either passive or active optical waveguides) to integrated circuits by leveraging the economies of scale of the CMOS microelectronics industry and using materials for the waveguide core such as silicon nitride (SiXNY) and silicon oxynitride (SiOXN1-X) for example. Microelectromechanical systems (MEMS) provide for movable platforms relative to the substrate allowing additional functionality to be added to a silicon circuit but also Silicon Photonics. Accordingly, by combining “fixed” waveguides formed upon the substrate with “movable” waveguides formed upon one or more movable platforms the inventors have established a series of Integrated Optics MEMS (IO-MEMS) based on Silicon Photonics. Such IO-MEMS include optical switches, optical attenuators, optical gates, optical switch matrices, configurable wavelength division multiplexer / demultiplexer devices, etc. exploiting both platforms and deformable beams.

A LIDAR sensor system for a vehicle includes a silicon photonics substrate. The silicon photonics substrate includes: a semiconductor wafer; one or more surface features on a first surface of the semiconductor wafer; and a photoresist layer formed on the first surface of the semiconductor wafer, wherein the photoresist layer includes a laminated dry film. The silicon photonics substrate can be manufactured by obtaining a semiconductor wafer having one or more surface features; applying a dry film photoresist layer to a first surface of the semiconductor wafer; performing an adhesion bake process on the semiconductor wafer; developing the dry film photoresist layer to produce one or more developed regions in the dry film photoresist layer; and forming one or more solder bumps in the one or more developed regions.

This application provides a method, system, electronic device, and storage medium for determining silicon photonics bias voltage, relating to the field of optical communication technology. The method includes: acquiring at least four pre-set sampling voltages and sequentially applying each sampling voltage to the heating element of a silicon photonics modulator; acquiring the output power of the silicon photonics modulator under each sampling voltage; fitting and generating a response curve between voltage and output power based on the multiple sampling voltages and the corresponding output power; determining a target voltage corresponding to a preset operating state based on the response curve between voltage and output power, and using the target voltage as the operating bias voltage of the silicon photonics modulator under the preset operating state, achieving high-precision, adaptive bias voltage tracking, greatly improving the production efficiency of optical modules, and being simple and reliable.

This invention discloses a bidirectional continuous-variable quantum key distribution method and system based on frequency division duplexing in a single-transceiver ring network. The method is based on a monolithically integrated silicon photonics transceiver chip. By pre-setting optical carrier frequency offsets for the forward and reverse links, it isolates the quantum signal from Rayleigh backscattering noise in the fiber in the frequency domain. The transmitting end generates a broadband waveform containing quantum signals and pilot signals, which is transmitted bidirectionally through a single optical fiber. The receiving end uses a laser source from the same chip as the local oscillator for coherent heterodyne detection. A digital signal processing module performs orthogonalization correction, phase recovery, and matched filtering to suppress noise and extract the quantum signal to generate a secure key. This invention solves the problems of inflexible networking, low fiber utilization, and severe scattering noise interference in bidirectional transmission over a single fiber caused by the separation of the transmitting and receiving ends in integrated continuous-variable quantum key distribution systems. It provides a low-cost and highly flexible solution for metropolitan quantum ring networks.

The invention discloses silicon optical semiconductor packaging equipment with an ejection function, and relates to the technical field of semiconductor packaging, gas flows out through a large launder, a conical groove, a small launder and a second launder, after the gas enters from the large launder, due to the fact that the space of the large launder is large, the large launder can accommodate more gas to rapidly flow in, and then the gas enters the conical groove; the unique shape of the conical groove enables the channel to be narrowed gradually, and gas is accelerated at the channel. Finally, the air is sprayed out from the small flow groove at a high speed to form strong airflow, the airflow acceleration process enables the air spraying moving assembly to obtain large enough power in a short time, acting force is rapidly applied to the packaged silicon optical semiconductor, rapid ejection is achieved, the time needed by ejection operation is greatly shortened, and the guided airflow is high in efficiency. According to the utility model, the airflow is uniformly sprayed from the small launder, and the uniform airflow acts on the silicon photosemiconductor, so that the stress on the silicon photosemiconductor can be uniformly distributed, and the problems of inclination, overturning or damage and the like of a device caused by overlarge local stress are avoided.

Silicon photonics technologies adds integrated optics functionality to CMOS integrated circuits thereby leveraging high volume manufacturing. Independent of geometry or technology these silicon photonic devices require packaging with single mode optical fibers to interface to the optical network and / or co-packaging with active semiconductor devices, discrete microoptoelectromechanical systems (MOEMS)s or monolithically integrated MOEMS. Stringent performance constraints and minimizing manufacturing costs / times are consistent demands on such photonic circuits. Accordingly, there is a demand for low-cost and low-loss optical coupling technologies for packaging that can easily be scaled for mass production that overcome limitations in the prior art. The inventors have established design methodologies, packaging schemes and component designs that leverage automated passive assembly techniques for speed / cost in combination with directly written optical interconnects that allow for offsetting the losses that would arise from the manufacturing tolerances of these passive assembly techniques.

A silicon photonic device includes a substrate formed from a silicon-containing material and patterned to comprise a first waveguide and a second waveguide defining a first trench extending between the first waveguide and the second waveguide. The first waveguide and second waveguide have upper surfaces exposed for bonding to an epitaxially grown layer. The first trench being exposed to the epitaxially grown layer. A support structure is formed within the first trench and extends upward to an upper surface at a height of the upper surfaces of the first waveguide and second waveguide. The support structure is optically non-functional.

This invention provides an end-face coupler and a silicon photonics chip. The end-face coupler includes a substrate layer, a first coupling unit, and a second coupling unit. The first coupling unit is disposed above the substrate layer, and the second coupling unit is disposed above the first coupling unit. The substrate layer is composed of silicon. The first coupling unit includes a silicon dioxide cladding layer. Multiple silicon nitride waveguide groups are arranged at intervals along a first direction in the silicon dioxide cladding layer. Each silicon nitride waveguide group has multiple silicon nitride waveguides arranged at intervals along a second direction, wherein the second direction is the input light propagation direction and is perpendicular to the first direction. The second coupling unit is composed of silicon nitride. The silicon photonics chip uses the above-described end-face coupler. This invention can receive input light spots of various shapes and has multiple controllable parameters, providing a high degree of freedom in mode spot control.

The present invention provides an electronic device having a quantum photonic integrated circuit (QuPIC) including a photonsource, a photon detector and an optical waveguide configured for guiding the photons from the source to the detector.

This invention provides a silicon photonics modulator control circuit and a silicon photonics communication module. The control circuit includes a directly connected digital signal processing chip and a silicon photonics modulation chip, and a heater control circuit, a bias voltage circuit, and a floating power supply circuit connected to the silicon photonics modulation chip. The heater control circuit includes a first CMOS operational amplifier; the bias voltage circuit includes a regulated charge pump converter and a second CMOS operational amplifier; the first CMOS operational amplifier, the regulated charge pump converter, and the second CMOS operational amplifier are all connected to an analog microcontroller integrating multi-channel power management and temperature control. The first CMOS operational amplifier and the second CMOS operational amplifier are also connected to the silicon photonics modulation chip. The floating power supply circuit includes a grounding capacitor. This invention uses an analog microcontroller as a base, combined with amplifiers to achieve heating control, meeting the high current requirements of heating. The direct drive of the modulation chip and backflow prevention, achieved with the charge pump converter, amplifier, and grounding capacitor, reduce cost and power consumption.

This invention relates to the field of optoelectronic module packaging technology, specifically a silicon photonics module packaging device. A transparent sealing cover is mounted on a base, forming a sealed cavity with the base. The material suction assembly includes a suction bracket, a rotating disk, a material suction nozzle, and a driving mechanism. The lifting assembly includes a lifting box, a multi-layer material trough, and a lifting mechanism for driving the material trough's movement. A feeding trough for the multi-layer material trough's entry and exit is installed at the bottom of the lifting box. The packaging working assembly includes a pair of opposing constant-temperature extrusion tables, a positioning plate, a top packaging mechanism, and a packaging adjustment plate. A driving component is connected to the bottom of the constant-temperature extrusion tables. The top packaging mechanism includes a lifting mechanism and a packaging plate, with a pressure sensor on the packaging surface of the packaging plate. The lifting assembly, the material suction assembly, and the packaging working assembly are linked by signals. This application achieves automated collaborative operation, overcoming the shortcomings of traditional step-by-step operation modes and significantly improving the accuracy, reliability, and production efficiency of silicon photonics module packaging.

An optical modulator includes a slab of silicon, a first layer of silicon disposed on the slab, and a second layer. The second layer includes a mixture of germanium and silicon. The second layer is at least partially disposed on the first layer. The second layer includes an intrinsic portion of the mixture and further includes first and second doped portions disposed on opposite sides of the intrinsic portion. The intrinsic portion and the first and second doped portions form an active region of the optical modulator.

A package assembly includes a silicon photonics chip having an optical waveguide exposed at a first side of the chip and an optical fiber coupling region formed along the first side of the chip. The package assembly includes a mold compound structure formed to extend around second, third, and fourth sides of the chip. The mold compound structure has a vertical thickness substantially equal to a vertical thickness of the chip. The package assembly includes a redistribution layer formed over the chip and over a portion of the mold compound structure. The redistribution layer includes electrically conductive interconnect structures to provide fanout of electrical contacts on the chip to corresponding electrical contacts on the redistribution layer. The redistribution layer is formed to leave the optical fiber coupling region exposed. An optical fiber is connected to the optical fiber coupling region in optical alignment with the optical waveguide within the chip.

A semiconductor structure is provided. The semiconductor structure includes a substrate, a waveguide, a heating structure, a back-end-of-line (BEOL) structure, and a capping oxide structure. The waveguide is over the substrate. The heating structure is over the waveguide. The BEOL structure is over the waveguide. The capping oxide structure penetrates the BEOL structure and covers the heating structure. The capping oxide structure includes a continuous sidewall extended from a top side of the BEOL structure to a bottom side of the BEOL structure. A method for manufacturing a semiconductor structure is also provided.

An optical transceiver assembly (100) for transmitting and detecting a plurality of optical signals, integrated with a silicon photonics platform having a folded optical path, includes a housing cavity (105) and a top cover (110) to enclose elements in the optical transceiver assembly (100) other than the housing cavity (105) and the top cover (110), a bottom housing module (115) housing an optical micro-integration (130). In particular, the optical transceiver assembly (100) is operatively configured to establish optical electrical communication with an external environment.

The invention discloses an artery blood vessel automatic tracking method and device based on silicon-based photons and wearable equipment. The device comprises a sensing area, a vertical grating coupler, a computing center and a control center, wherein the sensing area is integrated on a silicon-based photon chip and is formed by arranging a plurality of micro-ring resonators in an adjacent mode. The micro-ring resonator two-dimensional array is integrated on the chip based on the silicon-based photon technology, the central position of an artery blood vessel in a target area can be rapidly positioned and tracked through automatic scanning, and the position of the artery blood vessel can be rapidly switched and tracked even if the sensor displaces. The problem of signal loss caused by alignment and displacement of a traditional single-point sensor is thoroughly solved.

An H-bridge integrated laser driver optimizes power consumption, impedance matching, low-swing and high-swing reliability for electro-absorption modulated laser (EML) and direct modulated laser diode (DML) applications, VCSEL / silicon photonics, and other applications requiring high-swing drivers or control of impedance. The laser driver includes a retimer for converting low-speed parallel data into a high-speed serial bit stream and an inverted representation of the high-speed parallel bit stream, an M-bit PMOS DAC configured to receive a first buffered bit stream, an N-bit NMOS DAC configured to receive a second buffered bit stream substantially synchronized with the first buffered bit stream. A protection device is coupled between the M-bit DAC and the N-bit DAC. A first DC level shift pre-driver array is coupled between the retimer and the M-bit DAC to receive the high-speed parallel bit stream and the inverted high-speed parallel bit stream, and a second DC level shift pre-driver array is coupled between the retimer and the N-bit DAC to receive the high-speed parallel bit stream and the inverted high-speed parallel bit stream. An impedance matching module is coupled to an output of the protection device. The laser driver can be integrated on a CMOS communication chip.

A silicon photonics structure including a silicon photonics device is provided. The silicon photonics device includes a substrate and a waveguide. The substrate has a first side and a second side opposite to each other, and the waveguide is located on the first side. The width of the first side is greater than the width of the second side. The substrate includes a staircase structure.

The utility model relates to an 800G 2XFR4 silicon optical engine, which comprises a silicon optical chip distributed at 0 degree and four laser chips with different wavelengths, and the silicon optical chip is provided with four light inlet waveguides which are obliquely distributed and parallel to one another on the same side. A convergent lens which is distributed at 0 degree and has a light-emitting surface as an inclined surface is coupled between each laser chip and the light inlet waveguide; and the inclined light-emitting surface of the convergent lens is used for turning a light path so as to enable the angle of the light-emitting path to be the same as the inclination angle of the light inlet waveguide. The beneficial effects are that the light-emitting surface of the converging lens is designed to be the inclined surface, and the light-emitting surface can be used for turning the light path to enable the angle of the light-emitting path to be the same as the inclination angle of the light-in waveguide, so that the converging lens can be distributed at 0 degree, the requirement on the angle of a coupling table is reduced when the converging lens is coupled, and four laser chips can be distributed at 0 degree; and the suction nozzle does not need to rotate when the laser chip is mounted, so that the mounting speed and precision are greatly improved.

1. Name of the product in this design: High-speed silicon photonics sensor chassis (standard type). 2. Application of this design: This design is the chassis of a "high-speed silicon photonics sensor query instrument", used to carry and protect the internal optical signal detection and demodulation module. It is suitable for special industrial environments with high electromagnetic interference, flammable and explosive materials. The high-speed silicon photonics sensor uses laser detection technology to demodulate signals from silicon-based / fiber-based sensors such as Fabry-Perot cavities and Bragg gratings to measure physical quantities such as temperature, pressure, and acceleration. 3. The key design features of this product are the combination of shape and pattern. 4. The image or photograph that best illustrates the design's key points: a 3D model.

The application discloses a three-dimensional waveguide cross structure, and relates to the technical field of integrated optics and silicon photonics, and comprises a buried oxygen layer, a first material waveguide layer, a first silicon oxide cover layer, a second material waveguide layer and a second silicon oxide cover layer; the effective coupling length of the projection overlapping area of the first material waveguide layer on the second material waveguide layer satisfies the formula: wherein, L represents the effective coupling length, represents a coupling wavelength, and the value range of n is 1 to 2n, wherein n is an integer, and the constant is less than 1. According to the application, the position of the first material waveguide layer relative to the second material waveguide layer is adjusted, so that the power coupling of the cross port of the three-dimensional waveguide cross structure completes an integer multiple of the coupling period in propagation, thereby reducing the loss and crosstalk caused by coupling enhancement.

An optical device having a frequency shifter, the frequency shifter having an optical component having a phase modulator having a silicon material substrate, a buried oxide layer disposed on the silicon material substrate, a silicon waveguide disposed on the buried oxide layer, wherein the silicon waveguide is configured to guide a light, and a pair of electrodes disposed on the silicon waveguide, wherein the phase modulator is configured to change the phase of the light passing through it, and an electronic drive circuit in electrical communication with the phase modulator such that the phase change is linearly proportional to time. The disclosed optical device is configured to provide optical frequency shifting capabilities to and be integrated within silicon photonics-based devices, wherein the disclosed optical device is configured to facilitate this frequency shifting capability while being compact and having a low cost.

This utility model provides an optical module based on a silicon photonics chip, relating to the field of optical modules. The silicon photonics chip-based optical module includes an external housing. A mounting hole, communicating with the right side, is provided on the left side of the external housing. An optical module body is inserted into the mounting hole. An interface is fixedly connected to the left side of the optical module body, and a wire connection groove is provided at the upper right corner of the optical module body. This silicon photonics chip-based optical module, through the cooperation of a mating groove, an optical module mounting pin structure, a snap-fit ​​groove, a movable groove, a telescopic structure, an optical module mounting clip structure, a through hole, a moving rod, and an auxiliary plate, achieves more convenient optical module installation. It also eliminates concerns about the traditional snap-fit ​​structure breaking and affecting the module's stability. This solves the problem that current silicon photonics chip-based optical modules, due to their snap-fit ​​method, are prone to breakage during installation and disassembly, thus affecting the module's stability.