266 results about "Silicon photonics" patented technology

Silicon photonics technologies adds integrated optics functionality to CMOS integrated circuits thereby leveraging high volume manufacturing. Independent of geometry or technology these silicon photonic devices require packaging with single mode optical fibers to interface to the optical network and / or co-packaging with active semiconductor devices, discrete microoptoelectromechanical systems (MOEMS) s or monolithically integrated MOEMS. Stringent performance constraints and minimizing manufacturing costs / times are consistent demands on such photonic circuits. Accordingly, there is a demand for low-cost and low-loss optical coupling technologies for packaging that can easily be scaled for mass production that overcome limitations in the prior art. The inventors have established design methodologies, packaging schemes and component designs that leverage automated passive assembly techniques for speed / cost in combination with directly written optical interconnects that allow for offsetting the losses that would arise from the manufacturing tolerances of these passive assembly techniques.

A connector for use in coupling an optical signal between an optical fiber in an optical plug mounted to a bottom of a silicon photonics (SiPh) chip is provided. The connector comprises: a curved mirror; and a tilted flat mirror; wherein at least one of the curved mirror and the tilted flat mirror is formed on a hardened stamped imprint material that was deposited on the SiPh chip at least in a cavity thereof.

A co-packaged electro-optical module includes: a first planar light circuit (PLC) block; a silicon photonics chip electrically coupled to one or more chips; a splitter embedded in the first PLC block and to receive laser light from an optical fiber, to split the laser light into two portions, and to provide respective portions of the laser light to two planar waveguides; a planar surface of the silicon photonics chip to receive the portions of the laser light from the two planar waveguides in a direction perpendicular to the planar surface; modulators embedded in the silicon photonics chip and to modulate the portions of the laser light; a side edge of the silicon photonics chip extending perpendicular to the planar surface and to output the modulated portions of the laser light; and a second PLC block coupled to the side edge and to transmit the modulated portions of the laser light.

The utility model provides a laser, a hybrid integrated optical chip and an optical module. The laser comprises a P-InP ohmic contact layer, a P-type InP layer, a quantum well layer, an N-InP ohmic contact layer, an N-type InP layer and a waveguide layer from top to bottom. Wherein the P-type InP layer provides P-type carriers for the quantum well layer, and the N-type InP layer provides N-type carriers for the quantum well layer. And the P-type carriers and the N-type carriers are compounded in the quantum well layer to generate light. The waveguide layer is located below the quantum well. The optical confinement factor of the waveguide layer is larger than the optical confinement factor of the quantum well layer, so that the light field in the quantum well layer is large, the light is downwards coupled into the waveguide layer, and then light is output through the waveguide layer. The laser provided by the embodiment of the utility model emits light downwards and then outputs the light horizontally. The laser provided by the embodiment of the utility model can be integrated in a silicon optical chip, so that light emitting and modulation are integrated in the same chip.

The invention provides a liquid cooling optical module, and relates to the technical field of optical communication, the liquid cooling optical module comprises a shell, a circuit board, a metal sealing cover, a silicon optical assembly, a coupling jumper wire and a digital signal processing chip, the metal sealing cover and the circuit board are welded through soldering tin, and a sealing cavity is formed by the metal sealing cover and the circuit board; the silicon optical assembly is arranged on the circuit board and located in the sealing cavity. The silicon optical assembly comprises a laser light source chip, a collimating lens, a concave-convex lens, an isolator, a focusing lens and a silicon optical integrated chip which are sequentially arranged. The coupling jumper wire comprises a main connecting wire and a sub connecting wire, and a connector of the sub connecting wire and at least part of the sub connecting wire are located in the sealing cavity; a metal welding block is arranged on the part, penetrating through the metal sealing cover, of the sub-connecting line; and the metal welding block is welded with the metal sealing cover and the circuit board through tin soldering. According to the liquid cooling optical module provided by the invention, the sealing performance of the sealing cavity is improved.

The present disclosure relates generally to a hybrid modulator and methods of integrating hybrid materials, such as lithium-niobate-on-insulator, onto silicon-on-insulator (SOI) wafers for hybrid silicon photonics integration, while maintaining compatibility with standard silicon photonics components. In particular, the silicon on insulator (SOI) and lithium-niobate-on-insulator (LNOI) are bonded together to allow the modulator to be compatible with lithium-niobate devices or silicon devices via a single transition layer.

In one embodiment, an optical transceiver includes: a photonic integrated circuit (PIC) formed on a semiconductor die having a first side and a second side opposite the first side, where the first side includes a first optical circuit and a second optical circuit and the second side is to electrically couple with a substrate. The PIC may further have one or more through silicon vias (TSVs) formed through the semiconductor die to electrically couple the first side with the second side, where at least one of the TSVs is to enable electrical coupling between a first other die adapted to the first side and a second other die. Other embodiments are described and claimed.

A device having a hybrid silicon photonic-on-glass substrate is provided. The device includes a glass substrate having a plurality of through-glass vias (TGVs), an oxide layer, and metal contacts coupled with the TGVs. The device also includes a silicon photonic layer having metal pads and an oxide layer. The metal pads are bonded with the metal contacts and the oxide layer of the silicon photonic layer is bonded with the oxide layer of the glass substrate such that the silicon photonic layer is hybrid bonded to the glass substrate by a metal-to-metal, oxide-to-oxide hybrid bond. Methods of assembly are also provided.

Materials that are processable as spin coated films with a refractive index of less than about 1.25 are presented. These compositions include metal organic frameworks in a solvent system, with the MOFs including a metal or metal cluster (e.g., zirconium oxide) having organic linkers (e.g., maleic acid, benzene dicarboxylic acid) and optional endcaps to alter pore size, compositional stability, steric, and other properties of the material. The formed films are processable at low temperatures, thus allowing them to be processed on plastics. The provided materials find use in, for example, silicon photonics, augmented reality applications, virtual reality (VR) applications, CMOS image sensors, and micro-OLED applications.

Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects are provided. An example optical interconnect joins first and second optical conduits. A first direct oxide bond at room temperature joins outer claddings of the two optical conduits and a second direct bond joins the inner light-transmitting cores of the two conduits at an annealing temperature. The two low-temperature bonds allow photonics to coexist in an integrated circuit or microelectronics package without conventional high-temperatures detrimental to microelectronics. Direct-bonded square, rectangular, polygonal, and noncircular optical interfaces provide better matching with rectangular waveguides and better performance. Direct oxide-bonding processes can be applied to create running waveguides, photonic wires, and optical routing in an integrated circuit package or in chip-to-chip optical communications without need for conventional optical couplers. An example wafer-level process fabricates running waveguides, optical routing, and direct-bonded optical interconnects for silicon photonics and optoelectronics packages when two wafers are joined.

A laser device based on silicon photonics with in-cavity power monitor includes a gain chip, a reflector, and a photodiode. The gain chip is mounted on a silicon photonics substrate and is configured to emit light from an active region bounded between a frontend facet and a backend facet. The reflector is configured to reflect the light in a cavity formed between the reflector and the frontend facet through which a laser light is output. The photodiode is coupled to one or more waveguides in the cavity by a splitter disposed directly in an optical path between the reflector and a component positioned in the cavity. The photodiode is configured to measure power of light propagating through the cavity between the reflector and the component.

An optical communication system includes a transceiver device and a passive multiplexer and demultiplexer (PMAD). The transceiver device transmits or receives optical signals. The PMAD has a Mach-Zehnder interferometer structure, is connected to the transceiver device, and operates as a passive multiplexer or a passive demultiplexer. The PMAD includes: a first arm including a first waveguide, the first arm having a first dimension; a second arm including i) a second waveguide, and ii) a third waveguide, the second waveguide having a second dimension, the third waveguide having a third dimension, the second dimension being based on the first dimension and finely adjusts at least one performance parameter of the passive multiplexer and demultiplexer, and the third dimension being based on the first dimension and coarsely adjusts the at least one performance parameter; and a splitter and a coupler that propagate the optical signals.

A LIDAR sensor system for a vehicle includes a silicon photonics substrate. The silicon photonics substrate includes: a semiconductor wafer; one or more surface features on a first surface of the semiconductor wafer; and a photoresist layer formed on the first surface of the semiconductor wafer, wherein the photoresist layer includes a laminated dry film. The silicon photonics substrate can be manufactured by obtaining a semiconductor wafer having one or more surface features; applying a dry film photoresist layer to a first surface of the semiconductor wafer; performing an adhesion bake process on the semiconductor wafer; developing the dry film photoresist layer to produce one or more developed regions in the dry film photoresist layer; and forming one or more solder bumps in the one or more developed regions.

The invention relates to an optical signal transmission device. The optical signal transmission device comprises an optical transmitter and an optical receiver. The optical transmitter and the optical receiver are connected through an optical fiber, the optical transmitter comprises a laser and a silicon optical chip, and the laser is used for outputting multiple paths of optical signals to be transmitted to the silicon optical chip; the silicon optical chip is used for carrying out modulation and wave combination processing on multiple paths of optical signals to be transmitted and transmitting the processed optical signals to the optical receiver through an optical fiber; and the optical receiver is used for performing photoelectric conversion on the processed optical signal to generate an electric signal corresponding to the optical signal to be transmitted. According to the invention, the silicon optical chip is directly adopted to realize modulation and wave combination processing at the same time instead of adopting semiconductor chips such as a laser chip for modulation and then adopting an independently arranged wave combiner for wave combination, so that the optical transceiver module can be arranged more ingeniously, the integrity of optical signal transmission can be ensured, and the optical signal transmission efficiency is improved. And the optical signal transmission performance can be improved.

Silicon Photonics is a candidate technology for adding integrated optics functionality, either passive or active optical waveguides) to integrated circuits by leveraging the economies of scale of the CMOS microelectronics industry and using materials for the waveguide core such as silicon nitride (SiXNY) and silicon oxynitride (SiOXN1-X) for example. Microelectromechanical systems (MEMS) provide for movable platforms relative to the substrate allowing additional functionality to be added to a silicon circuit but also Silicon Photonics. Accordingly, by combining “fixed” waveguides formed upon the substrate with “movable” waveguides formed upon one or more movable platforms the inventors have established a series of Integrated Optics MEMS (IO-MEMS) based on Silicon Photonics. Such IO-MEMS include optical switches, optical attenuators, optical gates, optical switch matrices, configurable wavelength division multiplexer / demultiplexer devices, etc. exploiting both platforms and deformable beams.

A method of wavelength tuning in a silicon photonics circuit includes receiving a bus waveguide, a ring resonator optically coupled to the bus waveguide, and a dielectric layer over the bus waveguide and over the ring resonator. The method further includes performing a first heat process at a first temperature to heat up the dielectric layer, where the first heat process shifts an initial resonance wavelength of the ring resonator to a first resonance wavelength shorter than the initial resonance wavelength. The first heat process permanently shifts the initial resonance wavelength to the first resonance wavelength, the first resonance wavelength being a wavelength when no heat is being applied to the ring resonator.

A system comprising a plurality of optical fibers and a first microlens array including a plurality of microlenses. Each of the plurality of optical fibers is bonded to one of the plurality of microlenses. The system also includes a prism disposed adjacent the first microlens array, a second microlens array disposed adjacent the prism, and a silicon photonics substrate disposed adjacent the second microlens array and including a plurality of input coupling elements and one or more optical waveguides.

An electro-optical device is disclosed. The device includes a glass substrate having a plurality of through-glass vias. The device also includes a photonic integrated circuit hybrid bonded to the glass substrate by way of a metal-to-metal, oxide-to-oxide hybrid bond. The PIC has a plurality of through-silicon vias that are coupled with the through-glass vias. The device also includes an electronic integrated circuit coupled with the photonic integrated circuit. A method of assembling a device, or a plurality of devices, is also disclosed.

An electro-optical modulator includes a substrate and an optical waveguide including an electro-optical thin film disposed on the substrate. The optical waveguide has an input end coupled to receive an optical signal and an output end opposite the input end. First and second electrodes are disposed on the substrate along opposite sides of the waveguide. A differential driver has first and second differential outputs coupled to apply a differential electrical signal between the first and second electrodes to modulate a polarization of the optical signal propagating in the waveguide.

The invention discloses a heterogeneous hybrid integration method of a planar optical waveguide device, and relates to the technical field of integrated silicon photonics, the method is used for heterogeneous hybrid integration of PLC chips with large waveguide feature size difference in different material systems, and the method comprises the following steps: firstly, carrying out large-angle grinding on a light emitting end of a front-end chip to enable a waveguide to form a reflection angle; a grating coupler is arranged on a front-end chip, a device surface of the front-end chip is opposite to a device surface of a rear-end chip, so that emergent light of the front-end chip can be reflected to the device surface of the rear-end chip and is aligned with the grating coupler on the device surface of the rear-end chip, and finally the two aligned chips are packaged to realize optical interconnection of the two chips. According to the technical scheme, when heterogeneous integration is carried out, emergent light of the front-end chip can be directly aligned to the grating coupler of the rear-end chip, the height difference problem of the two chips does not need to be considered, the problems that in an existing end face coupling technology, the chip height difference is sensitive, and coupling modes are difficult to match are solved, and the coupling efficiency is improved. And the integration level of the discrete device optical network system is effectively improved.

A system comprising a plurality of optical fibers and a first microlens array including a plurality of microlenses. Each of the plurality of optical fibers is bonded to one of the plurality of microlenses. The system also includes a prism disposed adjacent the first microlens array, a second microlens array disposed adjacent the prism, and a silicon photonics substrate disposed adjacent the second microlens array and including a plurality of input coupling elements and one or more optical waveguides.

An integrated photonics package and a method of forming it are disclosed. The integrated photonics package includes, encapsulated in a plastic encapsulation layer, an electrical signal module, a silicon photonics processing unit, a light-emitting unit, a heat sink structure and a micro-optical coupler. The electrical signal module is electrically connected and configured to both the silicon photonics processing unit and the light-emitting unit. The silicon photonics processing unit, the light-emitting unit and the micro-optical coupler are spaced apart, and the silicon photonics processing unit is located between the light-emitting unit and the micro-optical coupler. The light-emitting unit is configured to provide horizontal light, which is then processed by the silicon photonics processing unit and guided by the micro-optical coupler to vertically exit the integrated photonics package, thereby achieving in-package optical interconnection.

The present invention relates to the field of optical components, and in particular to a multi-wavelength silicon optical transmitter chip, whose input waveguide is used to input dual-band optical signals. A first multimode interference coupler is connected to the input waveguide and is used to distribute the dual-band optical signals from the input waveguide to two transmission paths. Each transmission path includes a silicon optical modulator and two second multimode interference couplers. The silicon optical modulator is connected between the two second multimode interference couplers via a waveguide. The silicon optical modulator includes a reverse bias electrode and two high-frequency electrodes, the two high-frequency electrodes being located on opposite sides of the waveguide and connected to the waveguide, and the reverse bias electrode being located in the middle of the waveguide. The high-frequency electrode includes multiple sub-electrodes arranged along a first direction, each of the multiple sub-electrodes including a main body, a connecting portion, and an end portion. The connecting portion and the end portion are connected to one side of the main body along a second direction, and the connecting portion and the end portion form a T-shaped structure. The end portion extends toward the waveguide and is connected to the waveguide. High-speed signal modulation is achieved.

The invention relates to a silicon optical chip which is provided with a first input waveguide, a plurality of first output waveguides and a Loop loop on the same side. The Loop loop has a second input waveguide and a second output waveguide, the second input waveguide dividing 90% of the light into the MPD and dividing 10% of the light into the second output waveguide. An optical fiber array for chip-level testing is provided with a first polarization-maintaining optical fiber, a third polarization-maintaining optical fiber, a multimode optical fiber and four second polarization-maintaining optical fibers, the first polarization-maintaining optical fiber corresponds to a first input waveguide in a silicon optical chip, the third polarization-maintaining optical fiber corresponds to a second input waveguide in the silicon optical chip, and the multimode optical fiber corresponds to a second output waveguide in the silicon optical chip. And the four second polarization maintaining optical fibers are respectively corresponding to four first output waveguides in the silicon optical chip. The method has the advantages that the chip testing speed can be greatly increased, and the chip cost cannot be additionally increased due to the fact that the chip area and the MPD number are not increased.

An optical transceiver includes a silicon photonics substrate and multiple devices. The devices are configured to process optical signals propagating to and from the optical transceiver, and to perform at least one of an optical-to-electrical conversion of received optical signals to incoming electric signals and an electrical-to-optical conversion of outgoing electric signals to transmitted optical signals. The devices are each fabricated to include respectively a package substrate configured according to one of multiple different package substrate mounting technologies. Each package substrate among the multiple devices is mounted on the silicon photonics substrate according to mounting requirements of the respective package substrate mounting technology of that package substrate. At least two of the package substrates are mounted according to the mounting requirements of different package substrate mounting technologies.

The invention discloses an FMCW laser radar system which comprises a silicon optical chip, a laser generation module, a signal receiving and transmitting module, a signal processing module, a control module and a two-dimensional scanning module. The signal receiving and transmitting module is integrated on the silicon optical chip; the control module is electrically connected with the signal processing module and the two-dimensional scanning module. The laser generation module is used for emitting laser signals; the signal receiving and transmitting module is used for receiving echo signals reflected after the laser signals pass through the two-dimensional scanning module and scan the plane of the target object, and the echo signals and the laser signals form beat frequency signals; the signal processing module is used for collecting beat frequency signals and processing the beat frequency signals to form preprocessed signals; the control module is used for controlling the arrangement mode of the two-dimensional scanning module so as to change the light emitting direction of the laser signal; and obtaining a pre-processing signal, calculating the distance and the speed of the target object according to the pre-processing signal, and generating a multi-dimensional point cloud picture. The system realizes point cloud picture output, and is small in size and easy to integrate.

A first electrode bonding pad is arranged on the upper surface of a heat sink, an N electrode of a DFB chip is attached to the first electrode bonding pad, a second electrode bonding pad is arranged at the position, behind the DFB chip, of the heat sink, a P electrode of an MPD chip is attached to the second electrode bonding pad, a photosensitive surface and a first N electrode are sequentially arranged on the MPD chip in the direction away from the DFB chip, and a second electrode bonding pad is arranged at the position, behind the second electrode bonding pad, of the MPD chip. The P electrode of the DFB chip is provided with a plurality of first gold threads which are distributed side by side, the first gold threads stride across the photosensitive surface and then are routed on the first N electrode of the MPD chip, and backlight of the DFB chip is reflected on the photosensitive surface of the MPD chip through the arc-shaped first gold threads. A CPO silicon light engine comprises a high-power light source COC. The MPD chip has the beneficial effects that the backlight of the DFB chip is reflected on the photosensitive surface of the MPD chip by adopting the first gold wire for supplying power to the DFB chip, so that the MPD chip finishes monitoring the optical power of the DFB chip, and the cost is reduced.

Embodiments described herein may be related to apparatuses, processes, and techniques related to disaggregating co-packaged SOC and photonic integrated circuits on an multichip package. The photonic integrated circuits may also be silicon photonics engines. In embodiments, multiple SOCs and photonic integrated circuits may be electrically coupled, respectively, into modules, with multiple modules then incorporated into an MCP using a stacked die structure. Other embodiments may be described and / or claimed.

The present application discloses a method for heterogeneous hybrid integration of planar optical waveguide devices, relating to the field of integrated silicon photonics technology. The method is used for heterogeneous hybrid integration of PLC chips with greatly different waveguide characteristic dimensions in different material systems. The method first grinds the light-emitting end of the front-end chip at a large angle to form a reflection angle for the waveguide. The device surface of the front-end chip is then arranged relative to the device surface of the back-end chip so that the light emitted by the front-end chip can be reflected to the device surface of the back-end chip and aligned with the grating coupler on the device surface of the back-end chip. Finally, the aligned two chips are packaged to achieve optical interconnection between the two chips. When performing heterogeneous integration, the technical solution of the present application can directly align the light emitted by the front-end chip to the grating coupler of the back-end chip without considering the height difference between the two chips. This solves the problem of the existing end-face coupling technology being sensitive to the chip height difference and difficult coupling mode matching, and effectively improves the integration level of the discrete device optical network system.

The utility model discloses a composite multimode waveguide structure, which belongs to the technical field of optoelectronic devices and comprises a plasmon unit made of a metal material or a material with a negative real part dielectric function. The plasmon unit is structurally characterized by comprising nanoparticles, nanowires, nanopore arrays or gradient structures; the dielectric waveguide is made of a semiconductor material with a high refractive index, and the dielectric waveguide is designed to be one of a strip-shaped waveguide, a ridge-shaped waveguide or a slit waveguide; and the substrate layer is located below the plasmon unit and the dielectric waveguide and comprises at least one low-refractive-index supporting layer, and the material system of the low-refractive-index supporting layer is one of an oxide material, a nitride material, a fluoride material or a composite substrate structure. According to the scheme, the contradiction of a plasma device and silicon photonics among mode degree of freedom, loss and process compatibility is solved.