1517results about "Semiconductor laser arrangements" patented technology

A photonic chip. In some embodiments, the photonic chip includes a waveguide; and an optically active device comprising a portion of the waveguide. The waveguide may have a first end at a first edge of the photonic chip; and a second end, and the waveguide may have, everywhere between the first end and the second end, a rate of change of curvature having a magnitude not exceeding 2,000 / mm2.

The invention discloses a monolithic integrated light emitting chip and a manufacturing method thereof, and relates to the technical field of semiconductor devices.The chip comprises a substrate, a passive waveguide layer, a first laser layer, a second laser layer, a modulator layer, a wrapping layer and a contact layer, the passive waveguide layer is formed by etching according to a preset pattern, and the first laser layer is formed on the substrate; comprising two input branches and an output branch, a first laser layer is arranged on one of the input branches, a second laser layer and a modulator layer are arranged on the other optical signal input branch, paths of the two input branches are coupled into a path of the output branch, gratings are arranged on the two laser layers, and the modulator layer is arranged on the output branch. A cladding and a contact layer are disposed over the functional layers. The two different laser layers are integrated in the chip, and the optical signals emitted by the different laser layers are combined and output through the passive waveguide layer with the predetermined pattern, so that the cost of the optical emission module is effectively reduced, the power consumption is reduced, and the product reliability is improved.

The utility model provides a multi-single-tube semiconductor laser diode densely-arranged beam shaping and coupling device, comprising a semiconductor array laser used for emitting a first beam array and carrying out fast and slow axis collimation to obtain a second beam array; the light beam reflection separation system is used for performing separation arrangement on the second light beam array; the fast and slow axis conversion system is arranged on a light path where the light beam is emitted by the light beam reflection separation system and used for rotating the fast and slow axis of the second light beam array which is separated and arranged by 90 degrees; the confocal beam shrinking and expanding system is used for simultaneously focusing the fast axis light spots and the slow axis light spots of the separated and arranged second light beam array and then carrying out fast axis beam shrinking and slow axis beam expanding to obtain a third light beam array; the light beam reflecting and combining system is arranged on the light beam emergent light path of the confocal beam shrinking and expanding system and is used for closely arranging the third light beam array; and the focusing system is arranged on a light path where the light beams are emitted by the light beam reflecting and combining system, and is used for focusing the light spots of the closely arranged third light beam array to a target size.

An optical emission array includes an optical input portion configured to provide a parent laser source for the optical emission array, and an optical output portion including a plurality of child laser emitters. Each child laser emitter of the plurality of child laser emitters is injection-locked to the parent laser source. The optical emission array further includes at least two optical distribution branches (i) disposed between the optical input portion and the optical output portion, and (ii) optically connecting at least two child laser emitters of the plurality of child laser emitters, respectively, to the parent laser source.

The embodiment of the invention provides a light-emitting device and laser equipment, and relates to the technical field of laser. The light emitting device includes: a mounting substrate including a connection pattern, connection pads, and an in-board interconnection region, the connection pads being electrically connected through the in-board interconnection region and the connection pattern; the light-emitting unit comprises a packaging tube shell and a laser chip arranged in the packaging tube shell; the light-emitting units are fixed on the connecting patterns of the mounting substrate, and the laser chips of each color are electrically connected with the two corresponding connecting bonding pads through the side wall wires, the conductive structures, the conductive areas and the in-board interconnection areas, so that independent power supply of the laser chips of different colors is realized. The problem that the using number of the laser chips is limited by the driving circuit is solved, the number of the driving circuit is not increased while the number of the laser chips is increased, the working efficiency of the driving circuit is effectively improved, and the cost is reduced.

To provide an optical unit which is used inside of a laser oscillator of an external resonance type and capable of suppressing an output loss during external oscillation.SOLUTION: An optical unit 60 comprises a FAC lens array 63 and a beam twister array 64. A second surface 63b of the FAC lens array 63 includes a curvature part. A first surface 63a of the FAC lens array 63 and third and fourth surfaces 64a and 64b of the beam twister array 64 are flat surfaces. A first antireflection layer AR1 of a first reflection factor is provided on the flat surface, and a second antireflection layer AR2 of a second reflection factor is provided on the second surface 63b. The first and second reflection factors are lower than a predetermined reflection factor, and the second reflection factor is higher than the first reflection factor. A fluctuation rate of the reflection factor with respect to film thickness fluctuation of the second antireflection layer AR2 is smaller than that of the first antireflection layer AR1.SELECTED DRAWING: Figure 7B

Integrated laser arrays, photonic devices, packages, and systems are disclosed. An example integrated laser array includes a first laser and a second laser, each laser including a light emitter structure and a waveguide having a grating. In one aspect, the effective pitch of the gratings of the first and second lasers differs by less than about 5 angstroms, while the gratings of the first and second lasers are fabricated at a resolution of at least 1 nm. In another aspect, each laser includes a waveguide having a left sidewall grating and a right sidewall grating, the effective widths of the waveguides of the first and second lasers are different, and an offset between the left sidewall grating and the right sidewall grating of the second laser is different than an offset between the left sidewall grating and the right sidewall grating of the first laser. The integrated laser arrays described herein may be particularly suited for implementation in dense wavelength division multiplexing systems.

The invention relates to the technical field of semiconductor lasers, and particularly provides an addressable semiconductor laser array, which comprises M # imgabs0 # N laser units, a plurality of anodes and a plurality of cathodes, the M # imgabs1 # N laser units are arranged in an array mode according to M # imgabs2 # N. For each anode in the multiple anodes, the laser units located in different rows and columns can be connected in series through the anodes to form inclined columns, the multiple anodes are connected in series to form multiple mutually-spaced inclined columns, and for each cathode in the multiple cathodes, the laser units in the same column are connected in series through the cathodes to form multiple mutually-spaced inclined columns. And all the cathodes are connected in parallel. According to the addressable semiconductor laser array, the lasers located in different rows and different columns are connected in series through the anodes, each laser unit can be controlled to emit light independently, any specific adjacent three laser units can emit light at the same time, then the addressable semiconductor laser array can emit light in various modes, and the application range of the addressable semiconductor laser array is widened.

The invention discloses an external cavity tunable laser linewidth compression system for realizing wavelength phase locking based on mutual injection of gain chips. The external cavity tunable laser linewidth compression system comprises a red light semiconductor laser main gain chip, a first collimation optical system, a blazed grating, a tuning rotating mirror, a reflector, a power supply driving system and a double-path feedback amplification system, the double-path feedback amplification system comprises a first secondary gain chip, a second secondary gain chip, a second collimation optical system, a third collimation optical system and a polarization-free beam splitter prism; and the red light semiconductor laser main gain chip, the first secondary gain chip and the second secondary gain chip are all connected with the power supply driving system. Therefore, the technical problems of low output infrared light power, poor stability and narrow mode-hopping-free tuning range in the prior art are solved, and high-power, narrow-linewidth, high-stability and large-range mode-hopping-free continuous tuning red light output can be realized.

A manufacturing method for a light-emitting device, the manufacturing method including: preparing a first substrate provided with a plurality of light-emitting bodies; preparing a second substrate including a first bonding portion having conductivity, a first pad portion electrically connected to the first bonding portion, and a first solder regulating portion located between the first bonding portion and the first pad portion, the second substrate including a solder formed on the first bonding portion; bonding a first object selected from the plurality of light-emitting bodies to the second substrate with the solder; and transferring the first object to the second substrate by separating the first substrate and the second substrate from each other.

A laser beam generation device includes power supply units, LD modules, a combiner, and a control device. The LD modules receive currents from the power supply units, and output laser beams. The combiner collects the laser beams and outputs one laser beam. The control device generates control signals such that power of the laser beam becomes a laser output setting value and such that the currents become current command values. Phases of pulses of the control signals are shifted from each other by 60 degrees.

Integrated laser arrays, photonic devices, packages, and systems are disclosed. An example integrated laser array includes first and second lasers, each laser including a light-emitter structure and a waveguide with a grating. In one aspect, effective pitches of the gratings of the first and second lasers are different by less than about 5 angstroms, while the gratings of the first and second lasers are fabricated with a resolution of at least 1 nanometer. In another aspect, each laser includes a waveguide with left and right sidewall gratings, effective widths of the waveguides of the first and second lasers are different, and an offset between the left and right sidewall gratings of the second laser is different from an offset between the left and right sidewall gratings of the first laser. Integrated laser arrays described herein may be particularly suitable for being implemented in dense wavelength division multiplexed systems.

The embodiment of the invention provides a laser array and a laser radar, and relates to the technical field of optical perception. The differential resistance of the laser array is adjustable, and the optical power of the output emitted laser is adjustable. The laser array comprises a first laser and a second laser; the first laser comprises a first reflecting layer, a first active layer and a second reflecting layer which are sequentially arranged along the epitaxial direction, and a first oxidation hole is formed in the second reflecting layer; the second laser comprises a third reflecting layer, a second active layer and a fourth reflecting layer which are sequentially arranged in the epitaxial direction, a second oxidation hole is formed in the fourth reflecting layer, and a light blocking layer is further arranged on the side, away from the second active layer, of the fourth reflecting layer. The projection of the light blocking layer on the second active layer is overlapped with the projection of the second oxidation hole on the second active layer; the first laser is electrically connected with the second laser.

The invention discloses a high-power semiconductor laser array which is formed by sequentially and alternately placing and welding n semiconductor laser chips and n + 1 tungsten copper heat sinks, the width of each tungsten copper heat sink is larger than that of each semiconductor laser chip, and the upper surface and the lower surface of each semiconductor laser chip are wrapped by the tungsten copper heat sinks to form a sandwich structure. The emergent end face of the semiconductor laser chip extends out of the edge of the tungsten copper heat sink by 10-20 microns. The invention also discloses a packaging method. The current injection density of the laser module at the laser emitting end is low, so that the optical power density of the emitting end is reduced, the reliability of a device is improved, and the service life of the device is prolonged.

The invention belongs to the field of coherent combination, and discloses a multi-strategy segmented fusion adaptive SPGD algorithm for a laser coherent combination system. The method is used for solving the problems that in a traditional SPGD algorithm, due to the fact that a fixed gain coefficient and disturbance amplitude exist, the convergence speed and stability of the algorithm are contradictory, and the optimal performance is difficult to achieve in different environments and system states. According to the method, the algorithm is divided into three stages in the iteration process, and self-adaptive adjustment of the gain coefficient and the disturbance amplitude is realized according to the characteristics of a hardware system in combination with three different iteration strategies. According to the method, the convergence speed of the algorithm can be remarkably improved, meanwhile, the stability of the algorithm can be effectively improved, the algorithm has higher robustness in consideration of hardware system characteristics, and the good application prospect and feasibility of the algorithm are shown.

Photonic particles and methods of using particles in biological samples are disclosed. The particles are configured to emit laser light when stimulated by, for example, pump source energy. The particles may include: a gain medium having an inorganic material, an optical cavity having a high refractive index, and a coating having an organic material. The particles may be less than 3 microns along their longest axis. The particles may be attached to each other to form, for example, doublets and triplets. The particles may be injection locked by coupling an injection beam into the particles during pumping, so that the injection seeds are amplified to develop into laser oscillations. The microscope system may include a pump source, a beam scanner, a spectrometer having a resolution of less than 1 nanometer and an acquisition rate of greater than 1 kilohertz, and a spectrum analyzer configured to distinguish the spectral peaks output by the laser from a broadband background.

The invention relates to the technical field of laser, in particular to an on-chip series edge-emitting semiconductor laser array and a process method. The on-chip series edge-emitting semiconductor laser array sequentially comprises a semi-insulating substrate, a non-doped buffer layer, a P-type heavily doped layer, a P-type tunnel junction layer, an N-type tunnel junction layer, an N-type cladding, an N-type waveguide layer, an active region, a P-type waveguide layer, a P-type cladding and a P-type cover layer from bottom to top. Table surfaces on the two sides of each light-emitting unit are deeply etched to the P-type heavily doped layer, and a lateral current diffusion suppression groove is formed between the bottoms of any two adjacent light-emitting units. An on-chip series edge-emitting semiconductor laser array structure is adopted, the parasitic effect is reduced through coplanar electrode design, upper and lower electrodes can be prepared through a single process to reduce the cost, lateral current diffusion suppression grooves are formed between light-emitting units to reduce crosstalk, the light-emitting units are connected in series to work under the same injection current, and the light-emitting efficiency is improved. The requirements of a driving circuit can be effectively reduced, and light-emitting uniformity is improved.

To provide a laser diode chip capable of emitting RGB light with one chip and also capable of obtaining high emission efficiency even when a chip is miniaturized.SOLUTION: A laser diode chip has, on an n-type AlxGa1-xN layer (0≤x≤1), AlGaInN laser diode structures (B', G', R') emitting blue light, green light and red light, respectively. These laser diode structures have: an insulating film (703) having at least one rectangular opening (703a) on the n-type AlxGa1-xN layer; a polygonal truncated pyramid-shaped n-type AlyGa1-yN layer (0≤y≤1) (704) on the n-type AlxGa1-xN layer in a portion of the opening; active layers (705-707) each provided along a top surface and a side surface of the n-type AlyGa1-yN layer; p-type AlzGa1-zN layers (0≤z≤1) (708-710) covering each active layer; a p-side electrode (711) on the p-type AlzGa1-zN layers; and an n-side electrode (712) provided on the n-type AlxGa1-xN layer or a rear face thereof.SELECTED DRAWING: Figure 37B

The invention relates to the technical field of optoelectronic devices, in particular to a multi-wavelength laser packaging device and detection equipment, and the multi-wavelength laser packaging device comprises a substrate, a box dam and a light-transmitting material which are sequentially arranged from bottom to top; the multi-wavelength laser packaging device further comprises a reflection component and a plurality of laser chips. The center of the reflection component is arranged at the center of the bottom of a cavity formed by the box dam, and the laser chips are symmetrically arranged on the two sides of the reflection component. The plurality of laser chips are used for emitting laser with at least one wavelength to irradiate an incidence point of the reflecting component; and the reflecting component is used for reflecting laser emitted by each laser chip, emitting the laser to the outside through the light-transmitting material, and converging the laser at a preset fixed distance from the chip. Different-wavelength lasers emitted by a plurality of integrated laser chips are converged at a fixed distance through the reflecting component, so that simultaneous detection of multi-wavelength lasers is realized, and portable design is facilitated.

The invention provides a multichannel light emission chip array based on an asymmetric multi-quantum well technology, an asymmetric multi-quantum well layer is composed of compressive strain InGaAlAs quantum wells and tensile strain InGaAlAs quantum barriers, the compressive strain InGaAlAs quantum wells and the tensile strain InGaAlAs quantum barriers are distributed at intervals, and the light-emitting wavelengths of the compressive strain InGaAlAs quantum wells are gradually reduced from top to bottom to form an asymmetric structure; the grating layer is of an array structure composed of a plurality of gratings, a plurality of laser units are formed, the grating layer is manufactured by adopting a reconstruction equivalent chirp technology, a sampling grating structure with a uniform grating period is manufactured in each laser unit through holographic photoetching and ultraviolet lithography in sequence, and pi phase shift is arranged in the center of the sampling grating. The invention also provides a preparation method of the multi-channel light emission chip array. According to the invention, accurate control of emission wavelength can be realized, sufficient gain is provided for each laser unit through the quantum well with an asymmetric structure, the single-mode yield and transmission capacity are improved, the preparation difficulty of the grating is simplified, and the demand of emerging calculation application for the Internet transmission rate is met.

The invention discloses a semiconductor laser, which comprises a laser light source; the polarizer comprises an incident side, a first reflection light-emitting side, a second reflection light-emitting side and a transmission light-emitting side; the first wave plate is arranged on the first reflection light emitting side; the second wave plate is arranged on the transmission light-emitting side; during working, laser emitted by the laser light source comprises first polarized light and second polarized light, the polarization directions of the first polarized light and the second polarized light are perpendicular to each other, and the laser enters the polarizer from the incidence side; the first polarized light is reflected by the polarizer, passes through the first wave plate to be subjected to polarization turning and is emitted along a first emergent light path, and part of light reflected back along the first emergent light path on the working surface passes through the first wave plate to be subjected to polarization turning again and passes through the polarizer to be emitted from a second reflection emergent light side; the second polarized light passes through the polarizer and the second wave plate to be subjected to polarization turning and is emitted out along a second emergent light path, and part of light reflected back along the second emergent light path on the working surface is subjected to polarization turning through the second wave plate again, then enters the polarizer and is reflected out from the second reflection emergent light side.

The invention discloses a C-band tunable broadband light source system with a wavelength and power locking function. The C-band tunable broadband light source system comprises a tunable laser array chip, a main control module, a laser chip current driving module, a temperature control module, an optical splitter, a wavelength locking module and a power adjusting module, the temperature control module reads and adjusts the working temperature of the tunable laser array chip; the laser chip current driving module applies current excitation to each laser in the tunable laser array chip; emergent light of the tunable laser array chip is respectively transmitted to the wavelength locking module and the power adjusting module through the optical splitter; the wavelength locking module carries out wavelength locking on the emergent light based on two F-P etalon with the same response curve period and complementary response curve peak values; and the power regulation module adopts a PID algorithm to carry out power regulation and locking on the emergent light. According to the invention, any wavelength lasing can be realized in the C wave band, and the method has the advantages of rapidness, accuracy and the like in the aspect of wavelength and power deviation correction.

Embodiments of the present application relate to the technical field of optical sensing, and provide a laser array and a laser radar. The differential resistance of the laser array is adjustable, and the optical power of output emitted laser light is adjustable. The laser array comprises a first laser and a second laser; the first laser comprises a first reflecting layer, a first active layer, and a second reflecting layer which are sequentially arranged in an epitaxial direction, and a first oxidation hole is formed in the second reflecting layer; the second laser comprises a third reflecting layer, a second active layer, and a fourth reflecting layer which are sequentially arranged in the epitaxial direction, a second oxidation hole is formed in the fourth reflecting layer, a light blocking layer is further provided on the side of the fourth reflecting layer away from the second active layer, and the projection of the light blocking layer on the second active layer overlaps the projection of the second oxidation hole on the second active layer; the first laser is electrically connected to the second laser.

A semiconductor body is described, comprising an n-doped semiconductor layer (3), a p-doped semiconductor layer (4), and an active region (5). The active region (5) is located, at least partially, between the n-doped semiconductor layer (3) and the p-doped semiconductor layer (4). In a region (6) located on the side of the active region (5) facing away from the n-doped semiconductor layer (3), the electron density is higher than the hole density. Furthermore, a semiconductor laser and a method for manufacturing a semiconductor laser are specified.

A coherent optical injection locking (COIL) apparatus generates multiple optical source outputs from a single optical source generated by a parent laser. The COIL apparatus includes a plurality of optical source generators each having a child laser, of lesser performance than the parent laser, that is injection locked to the single optical source. The optical source generators may have one or both of a shared configuration and a cascaded configuration that replicates the single optical source, or a single wavelength of the single optical source when it is a comb source.

The invention discloses a blue-light semiconductor laser array dense spectrum beam combining device with a self-adaptive wavelength adjustment function, and belongs to the technical field of blue-light semiconductor laser. The device is characterized in that a first blue light array emits a wavelength-locked collimated laser beam; the first spectroscope splits the light beam to obtain a main light beam and an auxiliary light beam; the first polaroid adjusts the polarization state of the secondary light beam to be S polarization; the first transmission grating diffracts the S-polarized light beam, the S-polarized light beam is reflected by the first adjustable reflector and propagated along an original light path, after the S-polarized light beam passes through the first spectroscope, a transmission part is reflected by the first plane reflector and then passes through the first spectroscope, the transmission part enters the original light path to be modulated again, a reflection part and a main light beam are subjected to space beam combination, and target laser is output; the monitoring and adjusting system analyzes the wavelength and the laser quality of the target laser in real time, adjusts the angle of the first adjustable plane mirror according to the wavelength and the laser quality, and reflects the laser with the target wavelength. The effects of output beam quality improvement, laser volume compression and system reliability improvement are achieved.

The invention relates to an optoelectronic laser device comprising: a semiconductor layer stack having an active zone arranged between a first layer of a first conductivity type and a second layer of a second conductivity type, at least one structure designed to constrict current in the active zone to generate laser radiation, and a first front side extending from a first top side in the direction of a first bottom side opposite the first top side and having an exit window for the laser radiation generated in the active zone;a carrier substrate with an electrical via extending from a second top side to an opposite second bottom side, and a second front side extending from the second bottom side toward the second top side, the second front side having a first section adjoining the second top side and a second section set back from the first section; and an electrical contact layer arranged on the first bottom side and configured to be arranged on a contact element and electrically connected to the first layer. The first top side and the second bottom side are arranged adjacent to one another in contact, and the electrical via is electrically connected to the second layer.

The invention provides a multi-chip packaged semiconductor laser, which comprises a tube shell, a plurality of equidistant step structures in the tube shell, a plurality of laser chips, a plurality of collimating lenses and a relay heat sink, and a plurality of diaphragms and tube shell pins on the side wall of the tube shell, wherein the equidistant step structures at the bottom of the tube shell are used for bearing and fixing the laser chips, the laser chips have the same light emitting direction, the collimating lens is fixed at the front end of the light emitting direction of the laser chips and is used for collimating the emergent laser of the laser chips, and the window sheets are fixed on the side wall of the tube shell and are in one-to-one correspondence with the laser chips. And the collimated laser is transmitted to the outside of the tube shell through the diaphragm to form a plurality of paths of parallel light beams with equal height or unequal height. According to the invention, slow-axis coupling lenses, reflectors and the like are reduced in the sealed shell, the coupling difficulty of optical elements of the sealed shell and the size of the shell are reduced, the cost is reduced, and the reliability of the product is improved.

The utility model discloses a semiconductor laser optical fiber coupling module. The semiconductor laser optical fiber coupling module comprises a semiconductor laser chipset, a first collimating lens array, a first reflecting mirror, a wedge-shaped mirror, a polarization splitting prism, a first reflecting prism, a second reflecting prism, a second collimating lens and an optical fiber, the light beam emitted by the first reflector is not parallel to the base any more, is integrally deflected through the wedge-shaped mirror and then is parallel to the base again, and then enters the optical fiber after being reflected and deflected for several times. According to the semiconductor laser optical fiber coupling module, the step height is converted into the wedge-shaped lens angle through the wedge-shaped lens, no step height design exists between adjacent chips, two paths of light beams enter the optical fiber after being subjected to a series of light beam shaping, the overall height of the device is reduced, the size of the semiconductor laser is reduced, more chip sets can be arranged, and the device reliability is improved. And the output power of the semiconductor laser is improved.

A VCSEL array has two or more VCSELs which are arranged on a common substrate and each have an in particular identical epitaxial structure with a first distributed Bragg reflector, DBR, an active zone, and a second distributed Bragg reflector, DBR, wherein the VCSEL array is designed in such a way that the wavelengths of two of the VCSELs differ by at least 0.003 nm and at most 5 nm.