1072results about "Semiconductor laser arrangements" patented technology

The embodiment of the invention provides a light-emitting device and laser equipment, and relates to the technical field of laser. The light emitting device includes: a mounting substrate including a connection pattern, connection pads, and an in-board interconnection region, the connection pads being electrically connected through the in-board interconnection region and the connection pattern; the light-emitting unit comprises a packaging tube shell and a laser chip arranged in the packaging tube shell; the light-emitting units are fixed on the connecting patterns of the mounting substrate, and the laser chips of each color are electrically connected with the two corresponding connecting bonding pads through the side wall wires, the conductive structures, the conductive areas and the in-board interconnection areas, so that independent power supply of the laser chips of different colors is realized. The problem that the using number of the laser chips is limited by the driving circuit is solved, the number of the driving circuit is not increased while the number of the laser chips is increased, the working efficiency of the driving circuit is effectively improved, and the cost is reduced.

The invention discloses an external cavity tunable laser linewidth compression system for realizing wavelength phase locking based on mutual injection of gain chips. The external cavity tunable laser linewidth compression system comprises a red light semiconductor laser main gain chip, a first collimation optical system, a blazed grating, a tuning rotating mirror, a reflector, a power supply driving system and a double-path feedback amplification system, the double-path feedback amplification system comprises a first secondary gain chip, a second secondary gain chip, a second collimation optical system, a third collimation optical system and a polarization-free beam splitter prism; and the red light semiconductor laser main gain chip, the first secondary gain chip and the second secondary gain chip are all connected with the power supply driving system. Therefore, the technical problems of low output infrared light power, poor stability and narrow mode-hopping-free tuning range in the prior art are solved, and high-power, narrow-linewidth, high-stability and large-range mode-hopping-free continuous tuning red light output can be realized.

The invention belongs to the field of coherent combination, and discloses a multi-strategy segmented fusion adaptive SPGD algorithm for a laser coherent combination system. The method is used for solving the problems that in a traditional SPGD algorithm, due to the fact that a fixed gain coefficient and disturbance amplitude exist, the convergence speed and stability of the algorithm are contradictory, and the optimal performance is difficult to achieve in different environments and system states. According to the method, the algorithm is divided into three stages in the iteration process, and self-adaptive adjustment of the gain coefficient and the disturbance amplitude is realized according to the characteristics of a hardware system in combination with three different iteration strategies. According to the method, the convergence speed of the algorithm can be remarkably improved, meanwhile, the stability of the algorithm can be effectively improved, the algorithm has higher robustness in consideration of hardware system characteristics, and the good application prospect and feasibility of the algorithm are shown.

The invention discloses a semiconductor laser, which comprises a laser light source; the polarizer comprises an incident side, a first reflection light-emitting side, a second reflection light-emitting side and a transmission light-emitting side; the first wave plate is arranged on the first reflection light emitting side; the second wave plate is arranged on the transmission light-emitting side; during working, laser emitted by the laser light source comprises first polarized light and second polarized light, the polarization directions of the first polarized light and the second polarized light are perpendicular to each other, and the laser enters the polarizer from the incidence side; the first polarized light is reflected by the polarizer, passes through the first wave plate to be subjected to polarization turning and is emitted along a first emergent light path, and part of light reflected back along the first emergent light path on the working surface passes through the first wave plate to be subjected to polarization turning again and passes through the polarizer to be emitted from a second reflection emergent light side; the second polarized light passes through the polarizer and the second wave plate to be subjected to polarization turning and is emitted out along a second emergent light path, and part of light reflected back along the second emergent light path on the working surface is subjected to polarization turning through the second wave plate again, then enters the polarizer and is reflected out from the second reflection emergent light side.

A coherent optical injection locking (COIL) apparatus generates multiple optical source outputs from a single optical source generated by a parent laser. The COIL apparatus includes a plurality of optical source generators each having a child laser, of lesser performance than the parent laser, that is injection locked to the single optical source. The optical source generators may have one or both of a shared configuration and a cascaded configuration that replicates the single optical source, or a single wavelength of the single optical source when it is a comb source.

The invention relates to an optoelectronic laser device comprising: a semiconductor layer stack having an active zone arranged between a first layer of a first conductivity type and a second layer of a second conductivity type, at least one structure designed to constrict current in the active zone to generate laser radiation, and a first front side extending from a first top side in the direction of a first bottom side opposite the first top side and having an exit window for the laser radiation generated in the active zone;a carrier substrate with an electrical via extending from a second top side to an opposite second bottom side, and a second front side extending from the second bottom side toward the second top side, the second front side having a first section adjoining the second top side and a second section set back from the first section; and an electrical contact layer arranged on the first bottom side and configured to be arranged on a contact element and electrically connected to the first layer. The first top side and the second bottom side are arranged adjacent to one another in contact, and the electrical via is electrically connected to the second layer.

The utility model provides a double-row packaged semiconductor laser, which belongs to the technical field of semiconductor lasers, and comprises a water channel, a water inlet and a water outlet are arranged at the bottom of the water channel, and a water inlet channel and a water outlet channel are arranged inside the water channel; the heat sink is fixedly arranged on one side of the water channel, and a plurality of heat dissipation teeth are arranged in each heat dissipation channel in the length direction of the channel; the lower ends of the two heat dissipation channels communicate with the water inlet channel, and the upper ends of the two heat dissipation channels communicate with the water outlet channel. Two laser chip sets; the two laser chips at the top end are connected in series; the two laser chip sets are packaged on one side of the heat sink and are respectively matched with the two heat dissipation channels; laser chips at the tail ends of the two laser chip sets are externally connected with a power supply through two lead electrodes; the front cover sleeves the outer sides of the heat sink and the two laser chip sets, and one end of the front cover is fixedly connected with the water channel; and the lens and the light guide crystal are sequentially and fixedly arranged on the two positioning steps respectively. The double-row packaged semiconductor laser can effectively solve the problems of poor heat dissipation and light spot homogenization.

A semiconductor light emitting device includes an edge-emitting element including emitters, a first front-surface electrode, a second front-surface electrode, first wires, and second wires. The emitters include a first emitter including a first element electrode, and a second emitter including a second element electrode. The first front-surface electrode is electrically connected to the first element electrode. The second front-surface electrode is electrically connected to the second element electrode. The first wires are electrically connecting the first element electrode to the first front-surface electrode. The second wires are electrically connecting the second element electrode to the second front-surface electrode. In plan view, a largest distance between adjacent ones of the second wires in the first direction is greater than a largest distance between adjacent ones of the first wires in the first direction.

The invention discloses a wavelength thermal tuning photon integrated device and a preparation method thereof.The device comprises a substrate, a modulator layer, a front sampling grating layer, a gain layer, a rear sampling grating layer, a cover layer and an electric contact layer, the cover layer and the electric contact layer jointly form a shallow ridge waveguide structure, and the shallow ridge waveguide structure is transversely arranged in the center of the upper portion of each functional layer; the whole cover layer and the electric contact layer are etched according to a preset ridge-shaped strip pattern, a cantilever beam structure is transversely arranged in the post-sampling grating layer, the cantilever beam structure comprises a cantilever beam and air grooves in the two sides of the cantilever beam, and the cantilever beam is located under the shallow ridge waveguide structure; the cantilever beam structure is formed by etching the rear sampling grating layer below the shallow ridge waveguide structure according to a preset cantilever strip pattern; according to the technical scheme, wavelength thermal tuning is achieved through collaborative design of the shallow ridge waveguide structure and the cantilever beam grating structure, limitation of material carrier concentration is avoided, thermal response is fast, and power consumption is remarkably reduced.

The utility model belongs to the field of laser application, and relates to beam shaping of a laser, in particular to a small-divergence-angle laser based on a beam shaping technology. The problems that in the prior art for laser diode collimation, astigmatism of the diode cannot be calibrated through single-lens collimation, and cost is increased due to the fact that fast axis collimation and slow axis collimation need to customize a fast axis collimating lens with a proper focal length are solved. The utility model discloses a small-divergence-angle laser based on a beam shaping technology. A first collimating lens, a fast-axis beam shrinking device and a beam expander are sequentially arranged on an emergent light path of a first laser diode; the light emitting point of the first laser diode is located at the focal point of the first collimating lens, the fast axis beam shrinking device comprises a first cylindrical lens and a second cylindrical lens, and the focal points of the first cylindrical lens and the second cylindrical lens coincide. According to the utility model, the divergence angle of the laser diode is reduced to 0.1 mrad, so that the diameter of a light spot at 500m is less than 100mm, and the actual light spot observed in an experiment is 80mm.

The invention relates to a stacked laser arrangement, including a first laser device having a light exit side and a semiconductor body which forms a resonator and has an active zone and two main sides and side faces arranged substantially perpendicular thereto; wherein the laser device has at least one contact region on a first of the two main sides. Moreover, a first spacer having a first contact main side and a contact side face is provided, with the contact main side having at least one contact line which leads from a contact region to a connection area on or adjacent to the contact side face. With its first main side facing the first contact main side, the first laser device is fastened to the first spacer such that the at least one contact region is electrically connected to the contact region of the first contact main side, and the side faces of the first laser device are spaced apart from the contact side face.

[Problem] To accurately perform a distance measurement process even when the light emission timing of a light-emitting element fluctuates. [Solution] This distance measurement device comprises: a light-receiving unit for receiving a light pulse emitted intermittently by a light-emitting element and receiving a reflected light pulse from a distance-measurement object that reflects the light pulse emitted by the light-emitting element; a light emission time detection unit for detecting the light emission time of the light-emitting element on the basis of the light reception timing of the light pulse received by the light-receiving unit; a time shift unit for shifting the light reception timing of the reflected light pulse received by the light-receiving unit so that the light emission time of the light-emitting element detected by the light emission time detection unit becomes a reference time; and a histogram generation unit for generating, on the basis of the light reception timing of the reflected light pulse shifted by the time shift unit, a histogram showing the light reception frequency for each light reception time of the intermittently received reflected light pulse.

Configurations are disclosed for multi-wavelength optical devices and systems. In particular, multi-wavelength optical devices that include separate chips optically connected via phonic wire bonds. The disclosed configurations can utilize photonic wire bond interconnects and photonic wire bond interconnection techniques, which may facilitate low-cost implementation of wavelength division multiplexed optical systems.

The invention discloses a preparation method and structure of a tunable laser, and the method comprises the steps: carrying out the surface layout of a substrate, and sequentially dividing the substrate into a front gain region, a front phase region, a common grating region, a rear phase region and a rear gain region; growing an active layer, manufacturing a butt-joint mask pattern in the gain region, etching to remove the active layer in the common grating region and the phase region, performing butt-joint growth of a passive layer, removing a mask, manufacturing a grating in the common grating region, and growing a cladding and an electric contact layer; manufacturing an inverted table shallow ridge waveguide structure, and etching an electrical isolation trench; and a cantilever arm structure is manufactured and formed in the common grating area, a titanium-platinum heating resistor, a grating electrode and a grounding electrode are manufactured, and the tunable laser is obtained after preparation of a P-surface electrode and an N-surface electrode is completed. The back-to-back double lasers share the thermal tuning grating, double-end light emitting and wavelength synchronous control are achieved, the cantilever arm structure of the grating ridge waveguide is manufactured, energy consumption of wavelength tuning is reduced, and a solution is provided for large-scale use of tunable light emitting chips in the future.

Implementations described herein are related to a diode driver that recirculates residual current from an operating current pulse in an inductor. Such recirculation produces a diagnostic current pulse to a diode array for measuring a voltage drop across a portion of the array. For example, after a controller charges an inductor of a diode driver to deliver operating current pulses to a portion of a diode array for illumination, the controller causes a residual current to remain and recirculate in the inductor. In some implementations, in response to the recirculating current reaching a monitoring threshold, the controller delivers a monitoring pulse to the portion of the diode array to measure a voltage drop across the portion of the diode array. In some implementations, the controller may infer defectivity in the portion of the array from such voltage drop measurements over time.

The invention discloses a beat frequency comparison device mediated by an optical frequency comb. The beat frequency comparison device comprises the optical frequency comb, a first frequency stabilized laser, a first beat frequency device, a first frequency mixer, a first high-pass filter, a second frequency stabilized laser, a second beat frequency device, a second frequency mixer, a second high-pass filter, a DDS signal generator, a third frequency mixer and a low-pass filter. Frequency-stabilized lasers output by the first frequency-stabilized laser and the second frequency-stabilized laser and an optical frequency comb output by the optical frequency comb are subjected to beat frequency in the first beat frequency device and the second beat frequency device respectively, and first beat frequency and second beat frequency are obtained; the first beat frequency and the second beat frequency are mixed with the carrier envelope offset frequency of the optical frequency comb, and a first sum frequency and a second sum frequency are filtered out; the first sum frequency obtains a synthetic frequency through direct digital frequency synthesis; the second sum frequency and the synthetic frequency are mixed in the third mixer, and then the difference frequency is filtered out through the low-pass filter. According to the invention, beat frequency comparison of frequency-stabilized lasers with different wavelengths can be realized, and the influence of the stability of the optical frequency comb is avoided.

A light emitting device comprising a germanium first layer; a nucleation layer; a buffer layer comprising a III-V composition; and an active layer. The sum product of As concentration and layer thickness in each of the layers is less than 20%. This enables the devices to be fabricated in an environment which must be free, or substantially free, of arsenic.

The invention relates to a laser arrangement comprising at least two edge-emitting laser ridges, each with an integrated active zone and an output coupling plane. The at least two edge-emitting laser ridges are spatially separated from one another and share a common, and in particular a single-piece, semiconductor layer sequence with a contact region. Each ridge has a contact terminal, particularly on a surface, for supplying charge carriers to the active zone. A support substrate with at least one contact region is electrically coupled and mechanically connected to the contact region of the common semiconductor layer sequence. Furthermore, a heating element is provided, which is applied to a surface consisting of one of the common semiconductor layer sequences and the support substrate, and comprises two contact terminals and a meandering conductor between the two contact terminals.

A multi-junction laser-diode module includes (a) a multi-junction laser diode having a plurality of laser junctions stacked in a vertical dimension parallel to the fast-axes of the laser beams emitted by the laser junctions, (b) a fast-axis cylindrical lens collimating each laser beam in the fast axis, whereby the laser beams emerge from the fast-axis cylindrical lens with mutually nonparallel propagation directions, (c) a transmissive beam-deflecting element that deflects the laser beams in the fast-axis dimension after the fast-axis cylindrical lens to make their propagation directions parallel, and (d) a slow-axis cylindrical lens configured to collimate each laser beam in the slow axis. The transmissive beam-deflecting element corrects for the propagation-direction discrepancy between the laser beams, in the fast-axis dimension, caused by fast-axis collimation. The multi-junction laser-diode module can thereby produce a laser beam bundle suitable for high-brightness fiber-coupling.

The invention relates to a component package, in particular a laser package, comprising a first semiconductor chip with a first main side and a second main side opposite the first. The first semiconductor chip has a first layer adjacent to the first main side, which comprises a photonically integrated element, wherein the first layer has at least one light input surface, at least one light output surface, and at least one light guide connecting the at least one light input surface and the at least one light output surface. The first semiconductor chip also has a second layer adjacent to the second main side, which comprises an integrated circuit that is decoupled from the photonically integrated element, and a plurality of contact pads on the second main side, which are provided for connection to a carrier, in particular a PCB, or a second semiconductor chip.The component package also comprises a first optoelectronic component, in particular a laser chip, which is designed to emit light of a first wavelength from at least one first emission surface, wherein the at least one first emission surface is arranged opposite the at least one light coupling surface.

A stepless semiconductor laser device (10), comprising a chip base (11), a plurality of laser chips (119), a plurality of fast-axis collimating mirrors (12), a plurality of slow-axis collimating mirrors (13), a plurality of first reflecting mirrors (14) and a beam-combining assembly, wherein the plurality of laser chips (119) are arranged on a surface of one side of the chip base (11), and the plurality of laser chips (119) have the same height in a direction perpendicular to the surface of the chip base (11); the plurality of laser chips (119) are divided into two rows and respectively serve as a first light-emitting assembly (111) and a second light-emitting assembly (112), and the plurality of laser chips (119) in the first light-emitting assembly (111) and the plurality of laser chips (119) in the second light-emitting assembly (112) are arranged in a staggered manner; in the light emission direction of each laser chip (119), a fast-axis collimating mirror (12), a slow-axis collimating mirror (13) and a first reflecting mirror (14) are arranged in sequence; and the beam-combining assembly is located on light reflection paths of the first reflecting mirrors (14) and is configured to perform beam combination on laser light that passes through the first reflecting mirrors (14).

The invention provides a broadband tunable light emitting chip based on an asymmetric multi-quantum well technology and a preparation method, the tunable light emitting chip comprises a plurality of laser units distributed in columns, and each column of laser units comprises a plurality of lasers connected in series; the laser units achieve single-waveguide laser output through cascade Y waveguide combination, each laser comprises an asymmetric multi-quantum well layer and a grating layer, the thickness of each quantum well is gradually decreased from top to bottom, and a grating is located on the surface of the upper limiting layer. The tunable lasers connected in series and in parallel are adopted, and single-waveguide laser output is achieved through cascade Y waveguide combination; the asymmetric multiple quantum wells are arranged, so that the overall tunable range of the laser can be widened; a sampling grating is manufactured through a reconstruction equivalent chirp technology to select a lasing wavelength, and pi phase shift is introduced to carry out phase matching so as to ensure single wavelength output; according to the invention, gains can be provided for a plurality of laser units, the density of monolithic integration is improved, the transmission capacity is increased, and the single-mode yield is improved.

Disclosed is a method for a light detection and ranging (LiDAR) device to measure the distance from the LiDAR device to an object. Specifically, the method may include a LiDAR device: outputting a first laser beam through a vertical-cavity surface-emitting laser (VCSEL) in each of a plurality of scan cycles; identifying at least one time point at which at least one phone is detected through a single-photon avalanche diode (SPAD) optically corresponding to the VCSEL, in each of the plurality of scan cycles, in a time bin unit having a specific time interval; determining a histogram on the basis of the at least one time point; and measuring the distance between the object and the LiDAR device on the basis of at least a portion of the histogram.

The embodiment of the invention discloses a multi-line laser projector which is used for providing high-integration-level multi-line laser projection and comprises a light source array and an emergent array which are sequentially arranged in the optical axis direction of an initial light beam, and the emergent array is integrally formed. The light source array comprises a plurality of light sources, and each light source is used for emitting an initial light beam; the emergent array is used for shaping each received initial light beam and turning at least part of the initial light beam to obtain a linear light beam corresponding to each initial light beam, any two linear light beams are not completely overlapped, and the linear light beams are not completely overlapped. The emergent array comprises a shaping assembly used for shaping processing and a steering assembly used for steering processing. The light source array and the emergent array are connected to form the multi-line laser projector.

A laser diode drive circuit is provided includes one or more laser diodes, a driving switching element that switches between a state in which a current is supplied to the one or more laser diodes and a state in which the current is not supplied, a driving capacitor that supplies a current to the one or more laser diodes, a drive circuit, and a boot strap circuit that supplies a voltage to the drive circuit. The boot strap circuit includes a capacitor and an inductor that suppresses a flow of a current that flows to the capacitor and to the one or more laser diodes connected in parallel during charging of the capacitor.

An electronic module for generating light pulses includes an electronic card or interposer, a LASER-diode lighting module, and a LASER-diode driver module. The interposer has an edge recess in which the lighting module is completely inserted. The driver module is arranged on top of the interposer and the lighting module. The electrical connections for driving the LASER diodes are obtained without resorting to wire bonding in order to reduce the parasitic inductances.

The invention provides a multi-wavelength integrated light source system and a manufacturing method thereof, the multi-wavelength integrated light source system comprises a PCSEL array and a photon integrated circuit, the PCSEL array comprises a plurality of PCSEL units, and photonic crystal structures of at least two PCSEL units in the plurality of PCSEL units are configured to have mutually different preset geometric parameters so as to respectively emit light with different wavelengths; the photonic integrated circuit comprises at least one wavelength division multiplexer; the photonic integrated circuit is formed on the photonic integration platform, and the PCSEL array and the photonic integrated circuit are physically bonded in a hybrid integration mode, so that light of different wavelengths emitted from at least two PCSEL units is coupled to different input ends of the wavelength division multiplexer.

The invention relates to an optoelectronic arrangement comprising a first semiconductor laser device and a photonically integrated element optically coupled to the first semiconductor laser device. The first semiconductor laser device has a first laser light exit surface for coupling out a laser light generated by the first semiconductor laser device, wherein the first semiconductor laser device is configured to emit laser light having a different divergence angle in two mutually perpendicular directions.The photonically integrated element comprises a first laser light coupling surface which is optically coupled to the first laser light exit surface, a first waveguide section which adjoins the first laser light coupling surface and is designed to guide the laser light coupled into the first laser light coupling surface, a first light-shaping element which is at least optically coupled to the first waveguide section and is designed to shape the laser light emitted by the first semiconductor laser device in such a way that the laser light has a substantially equal divergence angle in the two mutually perpendicular directions after being coupled out of the photonically integrated element, and a first coupling-out element which is operatively connected to the first light-shaping element for emitting the shaped laser light.

The invention provides a high-power external cavity tunable quantum cascade laser output module. The high-power external cavity tunable quantum cascade laser output module comprises a first lens, a first half-wave plate and a first mid-infrared grid polaroid which are sequentially arranged along a light path of a first laser; a second lens, a second half-wave plate, a second mid-infrared grid polarizer and a third half-wave plate are sequentially arranged along the light path of the second laser; emergent light of the first mid-infrared grid polaroid and the third half-wave plate is converged on different surfaces of the third mid-infrared grid polaroid, the first blazed grating is arranged on a reflection light path of the first mid-infrared grid polaroid, and the second blazed grating is arranged on a reflection light path of the second mid-infrared grid polaroid. According to the invention, the problems of wavelength locking and low polarization beam combination efficiency caused by insufficient polarization state of the quantum cascade laser can be effectively solved, narrow linewidth output and wavelength tuning of the quantum cascade laser can be realized, and even high-power dual-wavelength tunable output can be realized through polarization beam combination structure expansion.

The invention provides an arc-shaped arrangement semiconductor laser light source and a preparation method thereof. The arc-shaped arrangement semiconductor laser light source comprises a plurality of laser chips which are arranged at intervals along a first arc line, each laser chip is provided with a light-emitting surface, the center point of each light-emitting surface is located on the first arc line, and the light-emitting surfaces face the same focal point; and the plurality of driving electrodes are respectively connected with the corresponding laser chips, each driving electrode is used for controlling the corresponding laser chip to emit laser beams from the light-emitting surface according to a control signal loaded by the driving electrode, and the laser beams are converged at a focus.