710results about "Semiconductor laser arrangements" patented technology

The invention discloses an external cavity tunable laser linewidth compression system for realizing wavelength phase locking based on mutual injection of gain chips. The external cavity tunable laser linewidth compression system comprises a red light semiconductor laser main gain chip, a first collimation optical system, a blazed grating, a tuning rotating mirror, a reflector, a power supply driving system and a double-path feedback amplification system, the double-path feedback amplification system comprises a first secondary gain chip, a second secondary gain chip, a second collimation optical system, a third collimation optical system and a polarization-free beam splitter prism; and the red light semiconductor laser main gain chip, the first secondary gain chip and the second secondary gain chip are all connected with the power supply driving system. Therefore, the technical problems of low output infrared light power, poor stability and narrow mode-hopping-free tuning range in the prior art are solved, and high-power, narrow-linewidth, high-stability and large-range mode-hopping-free continuous tuning red light output can be realized.

The invention discloses a semiconductor laser, which comprises a laser light source; the polarizer comprises an incident side, a first reflection light-emitting side, a second reflection light-emitting side and a transmission light-emitting side; the first wave plate is arranged on the first reflection light emitting side; the second wave plate is arranged on the transmission light-emitting side; during working, laser emitted by the laser light source comprises first polarized light and second polarized light, the polarization directions of the first polarized light and the second polarized light are perpendicular to each other, and the laser enters the polarizer from the incidence side; the first polarized light is reflected by the polarizer, passes through the first wave plate to be subjected to polarization turning and is emitted along a first emergent light path, and part of light reflected back along the first emergent light path on the working surface passes through the first wave plate to be subjected to polarization turning again and passes through the polarizer to be emitted from a second reflection emergent light side; the second polarized light passes through the polarizer and the second wave plate to be subjected to polarization turning and is emitted out along a second emergent light path, and part of light reflected back along the second emergent light path on the working surface is subjected to polarization turning through the second wave plate again, then enters the polarizer and is reflected out from the second reflection emergent light side.

A coherent optical injection locking (COIL) apparatus generates multiple optical source outputs from a single optical source generated by a parent laser. The COIL apparatus includes a plurality of optical source generators each having a child laser, of lesser performance than the parent laser, that is injection locked to the single optical source. The optical source generators may have one or both of a shared configuration and a cascaded configuration that replicates the single optical source, or a single wavelength of the single optical source when it is a comb source.

A semiconductor light emitting device includes an edge-emitting element including emitters, a first front-surface electrode, a second front-surface electrode, first wires, and second wires. The emitters include a first emitter including a first element electrode, and a second emitter including a second element electrode. The first front-surface electrode is electrically connected to the first element electrode. The second front-surface electrode is electrically connected to the second element electrode. The first wires are electrically connecting the first element electrode to the first front-surface electrode. The second wires are electrically connecting the second element electrode to the second front-surface electrode. In plan view, a largest distance between adjacent ones of the second wires in the first direction is greater than a largest distance between adjacent ones of the first wires in the first direction.

The invention discloses a wavelength thermal tuning photon integrated device and a preparation method thereof.The device comprises a substrate, a modulator layer, a front sampling grating layer, a gain layer, a rear sampling grating layer, a cover layer and an electric contact layer, the cover layer and the electric contact layer jointly form a shallow ridge waveguide structure, and the shallow ridge waveguide structure is transversely arranged in the center of the upper portion of each functional layer; the whole cover layer and the electric contact layer are etched according to a preset ridge-shaped strip pattern, a cantilever beam structure is transversely arranged in the post-sampling grating layer, the cantilever beam structure comprises a cantilever beam and air grooves in the two sides of the cantilever beam, and the cantilever beam is located under the shallow ridge waveguide structure; the cantilever beam structure is formed by etching the rear sampling grating layer below the shallow ridge waveguide structure according to a preset cantilever strip pattern; according to the technical scheme, wavelength thermal tuning is achieved through collaborative design of the shallow ridge waveguide structure and the cantilever beam grating structure, limitation of material carrier concentration is avoided, thermal response is fast, and power consumption is remarkably reduced.

The utility model belongs to the field of laser application, and relates to beam shaping of a laser, in particular to a small-divergence-angle laser based on a beam shaping technology. The problems that in the prior art for laser diode collimation, astigmatism of the diode cannot be calibrated through single-lens collimation, and cost is increased due to the fact that fast axis collimation and slow axis collimation need to customize a fast axis collimating lens with a proper focal length are solved. The utility model discloses a small-divergence-angle laser based on a beam shaping technology. A first collimating lens, a fast-axis beam shrinking device and a beam expander are sequentially arranged on an emergent light path of a first laser diode; the light emitting point of the first laser diode is located at the focal point of the first collimating lens, the fast axis beam shrinking device comprises a first cylindrical lens and a second cylindrical lens, and the focal points of the first cylindrical lens and the second cylindrical lens coincide. According to the utility model, the divergence angle of the laser diode is reduced to 0.1 mrad, so that the diameter of a light spot at 500m is less than 100mm, and the actual light spot observed in an experiment is 80mm.

Configurations are disclosed for multi-wavelength optical devices and systems. In particular, multi-wavelength optical devices that include separate chips optically connected via phonic wire bonds. The disclosed configurations can utilize photonic wire bond interconnects and photonic wire bond interconnection techniques, which may facilitate low-cost implementation of wavelength division multiplexed optical systems.

The invention discloses a preparation method and structure of a tunable laser, and the method comprises the steps: carrying out the surface layout of a substrate, and sequentially dividing the substrate into a front gain region, a front phase region, a common grating region, a rear phase region and a rear gain region; growing an active layer, manufacturing a butt-joint mask pattern in the gain region, etching to remove the active layer in the common grating region and the phase region, performing butt-joint growth of a passive layer, removing a mask, manufacturing a grating in the common grating region, and growing a cladding and an electric contact layer; manufacturing an inverted table shallow ridge waveguide structure, and etching an electrical isolation trench; and a cantilever arm structure is manufactured and formed in the common grating area, a titanium-platinum heating resistor, a grating electrode and a grounding electrode are manufactured, and the tunable laser is obtained after preparation of a P-surface electrode and an N-surface electrode is completed. The back-to-back double lasers share the thermal tuning grating, double-end light emitting and wavelength synchronous control are achieved, the cantilever arm structure of the grating ridge waveguide is manufactured, energy consumption of wavelength tuning is reduced, and a solution is provided for large-scale use of tunable light emitting chips in the future.

Implementations described herein are related to a diode driver that recirculates residual current from an operating current pulse in an inductor. Such recirculation produces a diagnostic current pulse to a diode array for measuring a voltage drop across a portion of the array. For example, after a controller charges an inductor of a diode driver to deliver operating current pulses to a portion of a diode array for illumination, the controller causes a residual current to remain and recirculate in the inductor. In some implementations, in response to the recirculating current reaching a monitoring threshold, the controller delivers a monitoring pulse to the portion of the diode array to measure a voltage drop across the portion of the diode array. In some implementations, the controller may infer defectivity in the portion of the array from such voltage drop measurements over time.

The invention discloses a beat frequency comparison device mediated by an optical frequency comb. The beat frequency comparison device comprises the optical frequency comb, a first frequency stabilized laser, a first beat frequency device, a first frequency mixer, a first high-pass filter, a second frequency stabilized laser, a second beat frequency device, a second frequency mixer, a second high-pass filter, a DDS signal generator, a third frequency mixer and a low-pass filter. Frequency-stabilized lasers output by the first frequency-stabilized laser and the second frequency-stabilized laser and an optical frequency comb output by the optical frequency comb are subjected to beat frequency in the first beat frequency device and the second beat frequency device respectively, and first beat frequency and second beat frequency are obtained; the first beat frequency and the second beat frequency are mixed with the carrier envelope offset frequency of the optical frequency comb, and a first sum frequency and a second sum frequency are filtered out; the first sum frequency obtains a synthetic frequency through direct digital frequency synthesis; the second sum frequency and the synthetic frequency are mixed in the third mixer, and then the difference frequency is filtered out through the low-pass filter. According to the invention, beat frequency comparison of frequency-stabilized lasers with different wavelengths can be realized, and the influence of the stability of the optical frequency comb is avoided.

A light emitting device comprising a germanium first layer; a nucleation layer; a buffer layer comprising a III-V composition; and an active layer. The sum product of As concentration and layer thickness in each of the layers is less than 20%. This enables the devices to be fabricated in an environment which must be free, or substantially free, of arsenic.

The invention relates to a laser arrangement comprising at least two edge-emitting laser ridges, each with an integrated active zone and an output coupling plane. The at least two edge-emitting laser ridges are spatially separated from one another and share a common, and in particular a single-piece, semiconductor layer sequence with a contact region. Each ridge has a contact terminal, particularly on a surface, for supplying charge carriers to the active zone. A support substrate with at least one contact region is electrically coupled and mechanically connected to the contact region of the common semiconductor layer sequence. Furthermore, a heating element is provided, which is applied to a surface consisting of one of the common semiconductor layer sequences and the support substrate, and comprises two contact terminals and a meandering conductor between the two contact terminals.

The invention relates to an optoelectronic arrangement comprising a first semiconductor laser device and a photonically integrated element optically coupled to the first semiconductor laser device. The first semiconductor laser device has a first laser light exit surface for coupling out a laser light generated by the first semiconductor laser device, wherein the first semiconductor laser device is configured to emit laser light having a different divergence angle in two mutually perpendicular directions.The photonically integrated element comprises a first laser light coupling surface which is optically coupled to the first laser light exit surface, a first waveguide section which adjoins the first laser light coupling surface and is designed to guide the laser light coupled into the first laser light coupling surface, a first light-shaping element which is at least optically coupled to the first waveguide section and is designed to shape the laser light emitted by the first semiconductor laser device in such a way that the laser light has a substantially equal divergence angle in the two mutually perpendicular directions after being coupled out of the photonically integrated element, and a first coupling-out element which is operatively connected to the first light-shaping element for emitting the shaped laser light.

The invention provides a high-power external cavity tunable quantum cascade laser output module. The high-power external cavity tunable quantum cascade laser output module comprises a first lens, a first half-wave plate and a first mid-infrared grid polaroid which are sequentially arranged along a light path of a first laser; a second lens, a second half-wave plate, a second mid-infrared grid polarizer and a third half-wave plate are sequentially arranged along the light path of the second laser; emergent light of the first mid-infrared grid polaroid and the third half-wave plate is converged on different surfaces of the third mid-infrared grid polaroid, the first blazed grating is arranged on a reflection light path of the first mid-infrared grid polaroid, and the second blazed grating is arranged on a reflection light path of the second mid-infrared grid polaroid. According to the invention, the problems of wavelength locking and low polarization beam combination efficiency caused by insufficient polarization state of the quantum cascade laser can be effectively solved, narrow linewidth output and wavelength tuning of the quantum cascade laser can be realized, and even high-power dual-wavelength tunable output can be realized through polarization beam combination structure expansion.

A light emitting device characterized by comprising: a base portion having a mounting surface; a first light emitting element disposed on the mounting surface and having one or more light reflection members and a first light exit surface facing the one or more light reflection surfaces, the one or more light reflection members providing one or more light reflection surfaces on one virtual plane, the first light emitting element being disposed on the mounting surface with the first light exit surface when viewed from above being at an angle to the one or more light reflection surfaces, light exiting the first light exit surface irradiating the one or more light reflection surfaces; and a second light emitting element which has a second light exit surface facing the one or more light reflection surfaces and which is disposed on the mounting surface with the second light exit surface when viewed from above being at an angle to the first light exit surface, light exiting the second light exit surface irradiating the one or more light reflection surfaces. Light from the first light emitting element that has been reflected by the one or more light reflection surfaces and light from the second light emitting element become closer to each other and then enter a light extraction region of the light emitting device.

The invention provides a red-blue complex coaxial laser device, which comprises an infrared laser, N blue lasers and a beam combiner, the infrared laser is connected with the beam combiner through an infrared transmission optical fiber, and the N blue lasers are respectively connected with the beam combiner through N blue transmission optical fibers; the beam combiner comprises a first incident optical fiber, N second incident optical fibers and a coaxial composite optical fiber, the first incident optical fiber is connected with a fiber core of the coaxial composite optical fiber, and the N second incident optical fibers are connected with an outer cladding of the coaxial composite optical fiber; the infrared light transmission optical fiber is connected with the first incident optical fiber, and the N blue light transmission optical fibers are connected with the N second incident optical fibers in a one-to-one correspondence manner; n is an integer greater than or equal to 1. According to the red and blue complex coaxial laser device, coaxial output of blue light and infrared light can be achieved, transmission energy is high, the machining effect is improved, the structure is simple, and the size is small.

The utility model discloses a tunable laser light source for spectrum sensing, which comprises a tunable DFB laser array chip, a star coupler chip, an SOA array chip and an optical fiber array which are connected through waveguides, tunable lasers in each row are connected through waveguides, the lasers with adjacent wavelengths are distributed on different waveguides, and the optical fiber array is connected with the star coupler chip. The light output end of each waveguide is provided with an SOA. According to the utility model, the star-shaped coupler is adopted to uniformly distribute energy of light with different wavelengths of the tunable laser array to each light output waveguide, and the energy respectively enters different fiber grating sensors or fiber MEMS sensors and the like to realize temperature or strain sensing at the same time and realize multiplexing tree-shaped sensing and demodulation at the same time; the energy loss in the transmission process is reduced; the chips of different material systems are coupled by adopting a photon lead bonding or butt joint growth technology, the photon lead bonding technology does not need high-precision alignment, the processing efficiency is high, low-cost hybrid integration among the chips is realized, and the device is integrally compact.

The invention provides an on-chip integrated laser light source and an optical coupling integration method thereof.The on-chip integrated laser light source comprises a silicon optical substrate and a light source chip assembly integrated on the silicon optical substrate, and the silicon optical substrate comprises an optical signal transmission waveguide; the light source chip assembly comprises a surface-emitting distributed feedback laser chip so as to generate laser beams emitted in the direction perpendicular to the surface of the chip. The on-chip integrated laser light source further comprises a grating coupling structure arranged between the surface emission distributed feedback laser chip and the optical signal transmission waveguide. The light-emitting surface of the surface-emitting distributed feedback laser chip is arranged towards the silicon light substrate, and a laser beam generated by the surface-emitting distributed feedback laser chip is directly projected and coupled into the light signal transmission waveguide through the grating coupling structure; the surface-emitting distributed feedback laser chip is fixedly combined on the silicon optical substrate through a flip chip technology, so that the high-precision end face alignment requirement of the heterogeneous integrated waveguide is converted into high-efficiency grating coupling based on a surface light emitting mode. In this way, harsh end face coupling is converted into efficient grating coupling.

The invention relates to a laser package comprising a base element having a mounting surface on which at least one semiconductor laser element is arranged to emit light along a first optical axis that runs substantially parallel to the mounting surface. The laser package also comprises an integrally formed deflecting element arranged in the beam path of the at least one semiconductor laser element on the mounting surface and configured to couple the light emitted along the first optical axis and coupled in via a light entry surface of the deflecting element to a second optical axis via a light exit surface of the deflecting element, which is offset substantially parallel to the first optical axis.Furthermore, the laser package comprises an optical arrangement which is arranged downstream of the deflecting element in the beam path of the at least one semiconductor laser element on the arrangement surface. The optical arrangement is configured to collimate light emitted by the at least one semiconductor laser element along at least one direction and / or is configured to homogenize light emitted by the at least one semiconductor laser element along at least one direction.

In at least one embodiment, the optoelectronic semiconductor device comprises a carrier, a first semiconductor laser configured to emit a first laser radiation and applied on the carrier, and a multi-mode waveguide configured to guide the first laser radiation and also applied on the carrier, wherein the multi-mode waveguide comprises at least one furcation and a plurality of branches connected by the at least one furcation.

A frequency sweep control method and apparatus are provided. The method includes: outputting a first optical signal of a first laser unit, where a first frequency sweep range of the first optical signal is determined based on a first reference light emitting frequency and a first frequency variation upper limit; and switching to output a second optical signal of a second laser unit when a first frequency variation of the first optical signal is greater than or equal to a first threshold, where a second frequency sweep range of the second optical signal is determined based on a second reference light emitting frequency and a second frequency variation upper limit, and the first threshold is less than the first frequency variation upper limit.

A laser system for generating a segmented line beam includes a laser module emitting an input laser beam, and a one-dimensional array of prisms, or mirrors, that splits the input laser beam into a respective plurality of output laser beams propagating in a common plane but diverging from each other, in the common plane, when propagating away from the array of prisms. A field lens, or mirror, projects the output laser beams onto a target plane to form a segmented line beam at the target plane. The laser system is energy efficient by splitting rather than masking the input laser beam. The laser system is capable of achieving superior segment-to-segment consistency and can be configured to produce each segment with a top-hat intensity distribution. Furthermore, the laser system can be reconfigured with relative ease to meet different requirements in terms of segment length and width as well as segment-to-segment spacings.

A wavelength beam combining device for combining laser beams having different peak wavelengths comprises: a first optical component that separates the laser beams into first polarization beams, which are linearly polarized in a first polarization direction, and second polarization beams, which are linearly polarized in a second polarization direction orthogonal to the first polarization direction; a first polarization conversion element that converts the second polarization beams into third polarization beams, which are linearly polarized in the first polarization direction; a first and a second mirror that reflect the first and second polarization beams, respectively.third polarization rays reflect; a first diffraction element that receives the first polarization rays and diffractes them to form a first wavelength-combined ray that is coaxially combined; a second diffraction element that receives the third polarization rays and diffractes them to form a second wavelength-combined ray in which the third polarization rays are coaxially combined; and a second optical component onto which the first and second wavelength-combined rays are incident.

The present application provides a pump laser, an optical amplification module, and an optical amplification system. The pump laser is packaged by using a packaging substrate on which a plurality of LD chips and / or a plurality of PD chips are integrated, so that optical power outputted by the pump laser is increased, and the size and costs of a single pump laser are reduced, thereby facilitating improvement of the optical power amplification capability of the optical amplification module, reducing the size and costs of the optical amplification module, and promoting wide application of the optical amplification module.

The application discloses an independently replaceable space beam combining semiconductor laser array, which is used for solving the problems of high maintenance cost, high power loss and low space beam combining efficiency of a traditional semiconductor laser bar. The application comprises a carrier, N semiconductor lasers and N sets of beam shaping components which are arranged side by side and independently installed on the carrier. Each semiconductor laser comprises a positive electrode sheet, a semiconductor laser bar, a negative electrode sheet and an insulating pressing sheet which are connected in sequence from bottom to top. The positive electrode sheet is connected in series with the negative electrode sheet in the adjacent semiconductor laser. The light emitting end of each semiconductor laser bar is directed to the corresponding beam shaping component. The connecting end of each positive electrode sheet and negative electrode sheet is located at the back light end of the corresponding semiconductor laser bar. Each set of beam shaping components comprises a fast-axis collimator, a slow-axis collimator and a light path turning piece which are arranged in sequence along the light path. All the light path turning pieces are arranged in parallel, so that the space beam combining of the outgoing light of the semiconductor laser bar in the fast-axis direction is realized.

The invention relates to the technical field of laser devices, and discloses a multi-bar series connection assembly and a pumping solid laser, the multi-bar series connection assembly comprises a plurality of bar modules which are arranged, two adjacent bar modules are arranged at intervals, and a bent and deformable metal foil is connected between two adjacent bar modules. And the two adjacent bar modules realize positive and negative electrode conduction through the metal foil connected between the two bar modules. By means of the mode, thermal stress in the multi-bar series connection assembly can be effectively released, the problem of laser bar cracking caused by hard connection adopted by a traditional structure is solved, the structural reliability and stability of the multi-bar series connection assembly are improved, and the service life of the multi-bar series connection assembly is prolonged.

A laser assembly (10) includes an emitter array (34) and a lens array (36). The emitter array (34) includes a first emitter (18A) that generates a first emitter beam (20A) along a first emitter axis (44A), and a second emitter (18B) that generates a second emitter beam (20B) along a second emitter axis (44B). The first emitter axis (44A) and the second emitter axis (44B) are spaced apart a first emitter separation distance (42a). The lens array (36) includes a first lens (22A) that colliminates the first emitter beam (20A), and a second lens (22B) that colliminates the second emitter beam (20B). The first lens (22A) has a first lens axis (48A) and the second lens (22B) has a second lens axis (48B). The first lens axis (48A) and the second lens axis (48B) are spaced apart a first lens separation distance (46a) that is different from the first emitter separation distance (42a).

The invention relates to the field of semiconductor lasers, in particular to a high-power narrow-linewidth hybrid integrated laser, which comprises a wide waveguide laser gain chip and a silicon-based external cavity photon chip, and is characterized in that the silicon-based external cavity photon chip comprises a tip multi-section edge coupler, a bus waveguide, at least three cascaded micro-ring resonators and a feedback assembly; the tip multi-section edge coupler comprises a tip waveguide array and a conical combined waveguide, the tip waveguide array is composed of inverted conical waveguides arranged side by side, and the width of the input end face of each inverted conical waveguide is smaller than that of the output end face of each inverted conical waveguide; and the width of the conical combined waveguide is gradually reduced from the input end to the output end. The invention solves the industrial problem that high power and narrow linewidth are difficult to consider in the hybrid integrated laser, has the advantages of high output power, extremely narrow linewidth, wide tuning range, high coupling efficiency, good process tolerance, high integration level and the like, and provides a high-performance light source for the next generation of coherent optical communication, laser radar and precision measurement system.

Task: To provide a technique that can reduce the volume of a moisture-proof space that seals a light source module in a moisture-proof manner. Solution: A light source module 100 comprises a first laser 117 for emitting red light, a second laser 118 for emitting green light, a third laser 119 for emitting blue light, an electronic cooling module 530 for adjusting the temperature of the first laser 117, a first housing 410 in which the first laser 117 is housed, and a second housing 420 in which the second laser 118 and the third laser 119 are housed.

A wavelength beam combining device includes: a plurality of laser light sources configured to emit a plurality of laser beams in a first direction and having mutually different peak wavelengths and central axes arranged in a second direction intersecting the first direction; a first diffraction grating disposed at a position where the plurality of laser beams are received, the first diffraction grating being configured to diffract the plurality of laser beams in different directions according to wavelengths of the laser beams to cause the diffracted laser beams to enter the second diffraction grating; a second diffraction grating configured to diffract the plurality of laser beams diffracted by the first diffraction grating to form a wavelength-combined beam, and to direct the wavelength-combined beam in the first direction; and an optical coupling unit configured to couple the wavelength-combined beam to an optical transmission fiber and to be movable in the second direction.