101results about "Semiconductor laser arrangements" patented technology

The application discloses an independently replaceable space beam combining semiconductor laser array, which is used for solving the problems of high maintenance cost, high power loss and low space beam combining efficiency of a traditional semiconductor laser bar. The application comprises a carrier, N semiconductor lasers and N sets of beam shaping components which are arranged side by side and independently installed on the carrier. Each semiconductor laser comprises a positive electrode sheet, a semiconductor laser bar, a negative electrode sheet and an insulating pressing sheet which are connected in sequence from bottom to top. The positive electrode sheet is connected in series with the negative electrode sheet in the adjacent semiconductor laser. The light emitting end of each semiconductor laser bar is directed to the corresponding beam shaping component. The connecting end of each positive electrode sheet and negative electrode sheet is located at the back light end of the corresponding semiconductor laser bar. Each set of beam shaping components comprises a fast-axis collimator, a slow-axis collimator and a light path turning piece which are arranged in sequence along the light path. All the light path turning pieces are arranged in parallel, so that the space beam combining of the outgoing light of the semiconductor laser bar in the fast-axis direction is realized.

A wavelength beam combining device includes: a plurality of laser light sources configured to emit a plurality of laser beams in a first direction and having mutually different peak wavelengths and central axes arranged in a second direction intersecting the first direction; a first diffraction grating disposed at a position where the plurality of laser beams are received, the first diffraction grating being configured to diffract the plurality of laser beams in different directions according to wavelengths of the laser beams to cause the diffracted laser beams to enter the second diffraction grating; a second diffraction grating configured to diffract the plurality of laser beams diffracted by the first diffraction grating to form a wavelength-combined beam, and to direct the wavelength-combined beam in the first direction; and an optical coupling unit configured to couple the wavelength-combined beam to an optical transmission fiber and to be movable in the second direction.

To improve coupling efficiency when coupling wavelength-coupled light beams with an optical transmission fiber. A wavelength beam coupling device couples a plurality of laser beams emitted from a laser light source and having mutually different peak wavelengths, and the central axes of the light beams emitted in a first direction are arranged in a second direction intersecting the first direction. The wavelength beam coupling device includes: first and second diffraction gratings, the first diffraction grating being disposed at a position receiving the plurality of laser beams and causing the plurality of laser beams to be diffracted in different directions according to wavelengths to be incident on the second diffraction grating, the second diffraction grating further diffracting the plurality of laser beams diffracted by the first diffraction grating to form wavelength-coupled light beams, and the wavelength-coupled light beams being emitted in the first direction; and an optical coupling unit coupling the wavelength-coupled light beams with the optical transmission fiber and configured to be movable in the second direction.

The principal purpose of the present technology is to provide a technique for suppressing warpage of a wafer.　The present technology provides a light-emitting element (1) having: a plurality of mesa portions (41) that emit light; an insulating layer (18) disposed between the adjacent mesa portions (41); and an internal space (4) formed in a part of each insulating layer (18). The present technology also provides a driving element (2) having: a plurality of electrodes (22) electrically connected to respective ones of the plurality of mesa portions (41) of the light-emitting element (1), and for driving the light-emitting element (1); an insulating layer (21) disposed between the adjacent electrodes (22); and an internal space (4) formed in a part of each insulating layer (21).

A semiconductor light-emitting device includes: a substrate; front-surface electrodes; back-surface electrodes; a semiconductor light-emitting element; a first drive circuit; and a second drive circuit. The substrate includes a substrate front surface, and a substrate back surface. The front-surface electrodes are formed on the substrate front surface. The back-surface electrodes are formed on the substrate back surface and configured for mounting the semiconductor light-emitting device. The semiconductor light-emitting element includes a first light emitter and a second light emitter. The first drive circuit is configured to drive the first light emitter. The second drive circuit is configured to drive the second light emitter. The semiconductor light-emitting element, the first drive circuit, and the second drive circuit are mounted on the front-surface electrodes.

To provide a nitride semiconductor light-emitting element capable of reducing an operation voltage and also capable of increasing an optical confinement factor to an active layer.SOLUTION: A nitride semiconductor light-emitting element 100 includes: an N-type first cladding layer 102; an N-side guide layer 104; an active layer 105 including a well layer and a barrier layer and having a quantum well structure; a P-side guide layer 106; and a P-type cladding layer 110. Band gap energy of the N-side guide layer 104 monotonically increases with a distance from the active layer 105, and the N-side guide layer 104 includes a portion where the band gap energy continuously increases with the distance from the active layer 105. Average band gap energy of the P-side guide layer 106 is equal to or greater than average band gap energy of the N-side guide layer 104. When Tp represents a film thickness of the P-side guide layer 106 and Tn represents a film thickness of the N-side guide layer 104, a relationship Tn<Tp is satisfied.SELECTED DRAWING: Figure 5

To improve the coupling efficiency when coupling a wavelength-coupled beam into an optical transmission fiber. [Solution] The wavelength beam coupling device couples multiple laser beams emitted from a laser light source, each having different peak wavelengths, and arranged in a second direction where the central axes of the beams emitted in a first direction intersect with respect to the first direction. The wavelength beam coupling device comprises first and second diffraction gratings, the first diffraction grating being positioned to receive multiple laser beams and diffracting the multiple laser beams in different directions according to their wavelengths and causing them to be incident on the second diffraction grating, the second diffraction grating further diffracting the multiple laser beams diffracted by the first diffraction grating to form a wavelength-coupled beam, and emitting the wavelength-coupled beam in the first direction, and an optical coupling unit for coupling the wavelength-coupled beam into an optical transmission fiber, the optical coupling unit being configured to be movable in the second direction.

The application discloses a kind of multi-wavelength adjustment system and method, the system includes: multiple different wavelength laser chips, be set on multiple heat dissipation substrates;Heating block is in high temperature state, and is connected with the heat dissipation substrate by multiple gold wires;Wherein, the multiple gold wires are specifically used for: the heat of heating block is introduced into chip by gold wire, form heat gradient, by adjusting the number and length of the multiple gold wires, change the temperature difference between the heating block or laser chip and the heat dissipation substrate, to change the wavelength of the multiple different wavelength laser chips, so that the wavelength of chip is regulated and corrected, and scheme is easy to operate, and cost is lower.

Disclosed is a device (10, 100) for combining at least two light sources for a motor-vehicle lighting module, characterised in that it comprises at least two light sources (11, 14; 31, 32) of substantially the same colours, namely single-mode or multi-mode laser diodes, in that said at least two light sources (11, 14; 31, 32) are capable of emitting a respective light beam (1, 4; 51, 52) of different polarisation, and in that it comprises a polarisation beam splitter (43) arranged so as to superpose two light beams (1, 4; 51, 52) which would be emitted by the at least two light sources (11, 14; 31, 32), respectively, in order to generate a single output lighting beam (5; 55).

The application relates to the technical field of laser array packaging, in particular to a laser array welding packaging method of an external heat dissipation type photon passive integrated array, which comprises the following steps: acquiring temperature data and stress data of each monitoring point in a current welding point area and a heat dissipation path; obtaining a welding point risk index according to a temperature data change trend of each monitoring point in the current welding point area and in combination with overall distribution of the temperature data; obtaining a heat conduction efficiency index according to fluctuation distribution of temperature data of adjacent monitoring points on the heat dissipation path and in combination with a temperature difference between the current welding point area and a radiator surface; obtaining a coupling abnormality index according to fluctuation of the temperature data and the stress data of each monitoring point in the current welding point area in coordination with difference of the stress data; and finally adjusting process parameters in a laser array welding packaging process. The application can effectively improve welding point stability and optical coupling precision in the welding packaging process.

The application relates to a multi-wavelength independent power supply macro-channel semiconductor laser stack and a use method, the semiconductor laser stack comprising a first bar stack, a second bar stack, a common positive electrode, an intermediate control electrode, a common negative electrode and a macro-channel cooler; the first bar stack and the second bar stack are fixedly connected to the macro-channel cooler through an insulating heat-conducting substrate at the same time, the common positive electrode is connected to the anode of the first bar stack; the intermediate control electrode is connected between the first bar stack and the second bar stack, and the common negative electrode is connected to the cathode of the second bar stack. The semiconductor laser stack of the application improves the operation flexibility of the semiconductor laser stack through multiple electrodes, can realize precise step adjustment of power, actively prolongs the service life of the device through a time-sharing driving strategy, and generates a complex multi-beam time sequence waveform, and meets the harsh demands of advanced intelligent manufacturing.

The application relates to the technical field of semiconductor lasers, in particular to a novel transverse-cavity vertical-emission laser and array based on an inner-outer grating double-reflector, the novel transverse-cavity vertical-emission laser based on an inner-outer grating double-reflector comprising: a substrate; a quantum well layer arranged on the upper end face of the substrate; a back ridge optical waveguide arranged on the upper end face of the quantum well layer, the right end face of the back ridge optical waveguide is processed into an oblique angle phi, and the left and right end faces of the back ridge optical waveguide are both provided with a high reflectivity HR layer. The application has the following beneficial effects: multi-layer superimposed grating + metal grating electrode cooperation, coupling efficiency is improved to 92%-95% (traditional 85%), line width is narrowed to 2-10 KHz (traditional >=100 KHz), mode suppression ratio >=30 dB; oblique angle mirror surface and double-face HR reflection cooperate, vertical surface emission is realized, and the beam divergence angle is <=8 degrees.

An optical integrated device may include a substrate, a first laser diode oscillating in a transverse magnetic mode (TM mode) on the substrate, and a second laser diode oscillating in a transverse electric mode (TE mode) on the substrate, wherein the first laser diode includes a first body in a shape of a disk, and through holes penetrating the first body.

The utility model discloses a surface heating laser with an air-cooled structure, belonging to the field of laser applications. It includes an outer frame, a substrate is installed at the bottom of the outer frame, a laser module is installed on the top of the substrate, a heat dissipation seat is installed at the bottom of the substrate, a fan is installed at the bottom of the heat dissipation seat, ventilation holes are provided at the bottom of the heat dissipation seat, a spiral channel is provided inside the heat dissipation seat, and two rows of heat dissipation holes are provided on the heat dissipation seat. In the utility model, a spiral channel is provided inside the heat dissipation seat, and the spiral channel can guide the flowing air so that the air can move outward along the circumferential direction. Two rows of heat dissipation holes are provided on the heat dissipation seat, and the heat dissipation holes can discharge the internal air and take away the heat, thereby better protecting the laser module and effectively improving the service life of the laser module.

The utility model provides a kind of laser, including semiconductor DDL light module and laser exit head, and laser exit head is set to the light outlet end of semiconductor DDL light module;Semiconductor DDL light module includes at least one light unit, light unit includes upstream LD laser module, downstream LD laser module, total reflection mirror and staggered mirror, total reflection mirror is correspondingly set with upstream LD laser module, for reflecting the upstream laser beam generated by upstream LD laser module, staggered mirror is correspondingly set with downstream LD laser module, for reflecting the downstream laser beam generated by downstream LD laser module, upstream laser beam can pass through staggered mirror, and with downstream laser beam staggered distribution forms sub-beam.The semiconductor DDL light module of the utility model is directly connected with exit head, and power loss can be reduced;By setting staggered mirror, it can make the two LD laser modules of the light unit are side by side arrangement, and it is beneficial to improve the compactness of semiconductor DDL light module structure.

The application discloses a coupling enhanced space bidirectional light guide device of a coherent array laser and a preparation method thereof. The space bidirectional light guide device comprises array laser units, a space bidirectional light guide element and a coherent array coupling layer which are sequentially arranged in correspondence and form a resonant cavity. The space bidirectional light guide element is formed by multiple layers of space bidirectional light guide thin layers. A micropore array is formed on the space bidirectional light guide element, and the micropore array is perpendicular to the surface of the light guide thin layer. A photonic crystal array formed by the micropore array of an incident light surface corresponds to the array laser units, and a photonic crystal array formed by the micropore array of an outgoing light surface is concentrated towards the array center. The photonic crystal array realizes the guidance of laser beams. According to the technical scheme, the light beams can be accurately guided to the target position step by step, strong mutual coupling is generated, the coherent array light is output, the structure is simple and compact, the stability is good, the damage threshold is high, the bidirectional guidance of high-power light beams is realized, and the efficient preparation of the device is realized.

The application discloses a high-power semiconductor laser fiber coupling system based on total reflection and belongs to the technical field of lasers. The system comprises two groups of semiconductor laser array modules, a fast-slow axis collimating mirror array, a dichroic mirror for wavelength beam combining, a reflecting mirror for light path folding, a beam shrinking device and a focusing mirror for coupling light beams into an optical fiber; an isosceles right prism group based on total reflection is used to fill the dark area in the fast axis direction. The wavelengths of the array modules in each group of semiconductor laser array modules are the same, the semiconductor laser fiber coupling system can achieve the purpose of beam shaping and obtain high-power output, and compared with the traditional method, the structure is simple and compact.

The utility model provides a kind of three-color laser, including base, sleeve and lens, base includes pedestal, end cap and three laser chips, three laser chips are installed on the heat sink on base, heat sink and laser chip are located in end cap, sleeve is set on top surface, end cap is located in second accommodating cavity, lens is set in second through hole, first through hole is communicated with second through hole, lens is provided with three light-transmitting convex parts, one light-transmitting convex part is opposite to one laser chip.By integrating three laser chips arrangement on the heat sink of a pedestal, then through the packaging of end cap, and through lens fixedly arranged on sleeve, by the connection of sleeve and base, then the relative position of lens and laser chip is fixed, and by the three light-transmitting convex parts set in lens are respectively opposite to laser chip, then the light path adjustment of the laser output by each laser chip through light-transmitting convex part makes each laser beam in predetermined position beam combination.

To provide a semiconductor laser device capable of suitably suppressing occurrence of warpage in a semiconductor laser element and accurately aligning a plurality of luminous points.SOLUTION: A semiconductor laser device 1A comprises a semiconductor laser element 10 including a plurality of mesa parts 12, and a submount 20 including a plurality of recesses 22 in which the plurality of mesa parts 12 is arranged. An electrode 35 corresponding to each of the plurality of mesa parts 12 is electrically connected to a wiring part W via a solder member 33. A reference surface R1 of the semiconductor laser element 10 has surface contact with a reference surface R2 of the submount 20. A partition wall part 23 including the reference surface R2 is provided between recesses 22 adjacent to each other. When viewed from a Y axis direction, a distance d4 in an X-axis direction between a side surface 22b of the recess 22 and a side surface 12c of the mesa part 12 facing the side surface 22b becomes shorter as the side surface 22b heads to a base end part P from a top face 12b along a Z-axis direction.SELECTED DRAWING: Figure 9

The application discloses a fixed-intercept zooming ring pumping orthogonal polarization controllable vortex double-ring laser, which comprises a fiber-coupled output semiconductor laser array (1), a plano-convex lens (2), a fixed-intercept zooming ring pumping beam generating system (3), a first conical mirror (4), a laser gain medium (5), a V-shaped crystal conical mirror (6), a plane mirror (7) and a second conical mirror (8). The laser can realize orthogonal polarization controllable vortex double-ring laser output, and the topological charge number of the laser vortex phase can be continuously adjusted. The fixed-intercept zooming ring pumping system can make the laser maintain high mode matching degree during the adjustment process. The spin angular momentum and the orbital angular momentum carried by the laser beam can improve the particle trapping efficiency and reduce the thermal damage of the biological cells caused by the laser beam. The double polarization characteristics of the inner ring tangential and the outer ring radial can be fully utilized, the particle can be captured, and high-resolution imaging can be performed at the same time, so that the application of the vector vortex light field in the biomedical field can be greatly expanded.

The present application relates to the technical field of laser devices, and discloses a multi-bar series assembly and a pumped solid-state laser. The multi-bar series assembly comprises a plurality of bar modules which are arranged. Two adjacent bar modules are spaced apart from each other, and a bent and deformable metal foil is connected between the two adjacent bar modules. Positive and negative electrodes of the two adjacent bar modules are electrically connected by means of the metal foil connected between the two adjacent bar modules. By means of the method, the present application allows for effective release of thermal stress in the multi-bar series assembly, eliminates the problem of laser bar cracking caused by use of a hard connection in a conventional structure, improves structural reliability and stability, and prolongs service life.

A light emitting device (12) includes at least a plurality of light emitting elements, each of which emits light (L) having a luminous intensity when supplied with a current density, the current densities being different from each other or some of the current densities being different from each other. A light detection device (1) includes at least four light emitting elements, and the corresponding four light-on and light-off frequencies are selected to be completely different from each other or at least partially the same as each other. The light emitting device (12) and the light detection device (1) are capable of relative rotation with respect to the object (A). A light emitting method, a spectral detection method and a light emitting correction method are provided, which can improve the signal-to-noise ratio, correct the luminous intensity or spectral signal, discard the frequency domain signal of the background noise and leave the frequency domain signal of the spectral signal of the object (A), so as to achieve the filtering effect and improve the test accuracy.