The present invention relates to the technical field of
semiconductor lasers, and particularly relates to a GaN-based
blue laser and a preparation method thereof, including a substrate, on which an N-type GaN layer, an N-type lower confinement layer, an N-type lower
waveguide layer, an active region, an upper
waveguide layer, a P-type
electron blocking layer, a P-type upper confinement layer, and a P-type
contact layer are sequentially stacked; the P-type upper confinement layer is composed of at least one U-shaped GaN sub-layer and multiple
layers of P-type In x Al y Ga 1‑x‑y N sub-
layers stacked and compounded, where 0 ≤ x < y < 1, 0 < x < 1, 0 < x + y < 1. The present invention uses at least one U-shaped GaN sub-layer and multiple
layers of P-type In x Al y Ga 1‑x‑y N sub-layers stacked and compounded to form the P-type upper confinement layer, which not only improves the
crystal quality of the material, enhances the radiative recombination in the active region of the LD device, thereby improving the output
optical power and
photoelectric conversion efficiency of the LD, but also reduces the
voltage and thermal loss of the LD device, and improves the aging life and other performance of the LD device.