1896 results about "Organic group" patented technology

A PARP1 inhibitor compound has a structure of: Formula (I), R1 and R4 are independently selected from H and an organic group. R2 and R3 are independently absent, H, or an organic group. Z1 and Z2 are independently C or N. L has the structure: Formula (II). Each X1 is independently selected from C and N. Each X2 is independently selected from C, N, O and S. n, m, p, q, r and s are each in the range 0 to 6. m+n, p+q, and r+s are each in the range 2 to 6. Each R5A, R5B, R5C, and R6 is independently absent, H, or an organic group. Qa, Qb, Qc are each independently a bond or an organic linker. The compounds are for use in medicine, e.g. for use in treating cancer. Also provided are compositions and kits comprising the compounds, and methods of synthesising the compounds.

To provide a film that well maintains oil repellent properties even when used continuously in a high temperature environment.SOLUTION: A film contains: resin; and a siloxane compound that has a structure A of the formula [RSiO1.5]n (in the formula, R represents an organic group, and n represents an integer of 2 or more), wherein at least one R of a plurality of Rs present in the structure A is a group including an alkyl group, and the difference in the solubility parameter (SP value) between the resin and the structure A is 3.0 or less in terms of absolute value. The film has a surface free energy of 40 mJ / m2 or less.SELECTED DRAWING: None

As a high-performance resist material, a tin compound is provided which has properties such as solubility, hydrophobicity, and resist sensitivity with good balance. A tin compound includes a tin atom; an organic group R; and at least one of an oxo-ligand and a hydroxo-ligand. One molecule of the tin compound includes two or more types of organic group R and includes a Sn—O—Sn structure, and the organic group R has 1 to 30 carbon atoms.

To provide a film with high oil repellency even in a high temperature environment.SOLUTION: There is provided a film having a structure A of a formula: [RSiO1.5]n (wherein R represents an organic group, and n represents an integer of 2 or more), and at least one R in the structure A includes a siloxane compound having an alkyl group.SELECTED DRAWING: None

As a high-performance resist material that can have high purity and uniform solubility, the following tin compound is provided. The tin compound includes: a tin atom; an organic group R; and at least one of an oxo-ligand and a hydroxo-ligand, wherein the tin compound has a diffraction angle 2θ (°) of a peak with a strongest intensity between 5.00 to 15.00° in X-ray diffraction measurement, the strongest intensity peak has a half-value width of 1.00 to 4.00°, and the organic group R has 1 to 30 carbon atoms.

A method for producing a tin compound represented by formula (A1) with a purity of 95 mol % or higher, involves a step of distilling the tin compound, in which the number of plates of the distillation is 10 or more, and the reflux ratio is 30 or less.RSnX3  (A1)In formula (A1), R is an organic group with 1 to 30 carbon atoms, and may be substituted with halogen, oxygen atoms, or nitrogen atoms. X is selected from OR′ and NR′2. R′ is an organic group with 1 to 10 carbon atoms, and part may be substituted with halogen, oxygen atoms, or nitrogen atoms. When there are multiple R′ groups in the molecule, they may have the same or different structures, and they may be bonded to each other to form a cyclic structure.

The invention relates to an organic compound, a solar cell and application thereof. The organic compound is shown as a formula (1), wherein Ar is selected from any one of substituted or unsubstituted aryl with the ring-forming atom number of 6-50, substituted or unsubstituted heteroaryl with the ring-forming atom number of 5-50, a group shown as a formula (A) and a group shown as a formula (B), Ar'is selected from an electrically neutral organic group, and L is selected from a paraffin subunit with the carbon atom number of 1-10; r1 is an oxyacid group; n1 is selected from any integer of 1-3, and m1 is selected from any integer of 1-10; or the organic compound is an oxyacid radical salt of the compound as shown in the formula (1). The organic compound not only can be used as a passivation material, but also can be used as a hole transport material, and can improve the photoelectric conversion efficiency of a solar cell when being applied to preparation of the solar cell.

The invention relates to the technical field of biodiesel hydrogenation catalysts, and particularly discloses a hydrogenation catalyst of organic bentonite loaded cerium-zirconium solid solution and nickel-molybdenum phosphide as well as a preparation method and application of the hydrogenation catalyst. The hydrogenation catalyst with the organic bentonite loaded with the cerium-zirconium solid solution and the nickel-molybdenum phosphide comprises an organic bentonite carrier, the cerium-zirconium solid solution and the nickel-molybdenum phosphide, the loading capacity of the cerium-zirconium solid solution on the organic bentonite carrier is 2-2.5 wt%; the cerium-zirconium solid solution comprises cerium dioxide and zirconium dioxide; the loading capacity of the nickel molybdenum phosphide on the organic bentonite carrier is 10-15 wt%; and the nickel molybdenum phosphide is Ni2Mo3P. The organobentonite carrier provides an acid site and promotes deoxidation path optimization, the layered structure of the organobentonite carrier can limit the cerium-zirconium solid solution and the nickel-molybdenum phosphide, and organic groups are also embedded into the layered structure, so that the organic compatibility of the organobentonite carrier to biodiesel is improved, and the catalytic efficiency is improved. The cerium-zirconium solid solution provides oxygen vacancies, promotes hydrogenation / deoxidation, and improves the thermal stability and sintering resistance of the catalyst.

A surface treatment agent containing a hydrocarbon-terminal-group-containing compound of the following formula makes it possible to form a cured film that is exceptional in water repellency, slipperiness, dirt removability, and abrasion resistance, particularly steel wool abrasion resistance and wet abrasion resistance. (R1 is a C12-80 monovalent hydrocarbon group that includes a C12 or higher monovalent or divalent linear unsubstituted aliphatic saturated hydrocarbon group and does not contain a hydrocarbon branched structure, R2 is H, a halogen atom, a hydroxyl group, a siloxy group, an -OSi(CH3)3 group, an -OSi(C2H5)3 group, an amino group, an SH group, a monovalent hydrocarbon group, R1, -V-Z-(Y-A)m, or -Y-A, U is a single bond, C, or a trivalent or tetravalent organic group, V is a single bond or a divalent hydrocarbon group, Z is a single bond, C, Si, N, S, or a trivalent to octavalent organic group, Y is a single bond or a divalent hydrocarbon group, A is a monovalent reactive group, k is 0, 1, or 2, and m is 1-7.)

Provided is a liquid crystal alignment film which suppresses AC afterimage at a high level and which reduces charge accumulation and flicker due to backlight. The liquid crystal aligning agent contains the following polymer (A) and polymer (B). The polymer (A) is selected from the group consisting of polyimide precursors having formula (A1) and polyimides that are imides of the polyimide precursors. The polymer (B) is selected from the group consisting of polyimide precursors of formula (B1) and polyimides that are imides of the polyimide precursors, and the proportion of tetravalent organic groups represented by formula (X-10) is 40 mol% or more with respect to the total of 1 mol of tetracarboxylic acid residues of the polymer (B). # imgabs0 # (wherein the meaning of each symbol in the formula is as defined in the description. ) # imgabs1 # (* represents a bond).

Hot melt adhesive including a polar group-containing olefin copolymer has: number average molecular weight (Mn) between 10 to 50 kg / mol, crystallinity (Xc) content below 30%, enthalpy (ΔH) between 5 to 65 J / g, polydispersity index (PDI) from 2 to 6, melting temperature (Tm) between 40 and 120° C., and including at least 80 mol % of a constituent unit of formula (1), optionally a constituent unit of formula (2), and between 0.1 to 1 mol %, of a constituent unit of formula (3):wherein R1 is H or CH3; R2 is a hydrocarbyl group having 0 to 10 carbon atoms; R3 is a hydrocarbyl group having 2 to 10 carbon atoms, when X is hydroxyl functionality or a hydrocarbyl group having 0 to 10 carbon atoms, when X is polar organic group containing at least one carboxylic acid functionality and 0 to 6 carbon atoms.

The invention relates to alkali-soluble light-cured resin and a preparation method thereof, a light-cured resin composition, a photosensitive dry film and a semiconductor device. The structural formula of the alkali-soluble light-cured resin is shown as a formula (I) or a formula (II), wherein in the formula (I), R1 is selected from one of a single bond, an oxygen atom, a sulfonyl group and an organic group with 1-30 carbon atoms; in the formula (I) and the formula (II), n is a natural number greater than or equal to 0; r2 is selected from organic groups with 1-50 carbon atoms; r3 is selected from an aromatic organic group or an aliphatic organic group; r4 is selected from organic groups containing unsaturated carbon-carbon double bonds; and R5 is selected from carboxyl-containing organic groups. A molecular chain of the alkali-soluble light-cured resin contains a photosensitive group, an imide structure and an alkali-soluble group, on one hand, the thermal mechanical property of the alkali-soluble light-cured resin can be enhanced, and on the other hand, the alkali-soluble light-cured resin can form a uniform and stable resin glue solution in a solvent, so that the comprehensive performance of the alkali-soluble light-cured resin is improved.

A film contains a siloxane compound having a structure A of Formula: [RSiO1.5]n (provided that in the formula, R represents an organic group and n represents an integer of 2 or more), where at least one R in the structure A has a group including an alkyl group, in which a surface free energy is 40 mJ / m2 or less.

The disclosure aims to provide a method for producing a refined polytetrafluoroethylene powder, in which a short-chain fluorine compound is reduced from low-molecular-weight polytetrafluoroethylene. The disclosure relates to a method for producing a refined polytetrafluoroethylene powder, including a step of reducing a short-chain fluorine compound from a low-molecular weight polytetrafluoroethylene powder obtained by radical polymerization. The step includes at least reducing a compound represented by the following formula (1) to 179 ppb or less and a compound represented by the following formula (2) to 6900 ppb or less:         Formula (1):     (H-(CF2)m-COO)pM1 wherein m is 3 to 20; M1 is H, a metal atom, NR54 (where R5s are optionally the same as or different from each other and each represent H or a C1-C10 organic group), imidazolium optionally containing a substituent, pyridinium optionally containing a substituent, or phosphonium optionally containing a substituent; and p is 1 or 2, and         Formula (2) :     (H-(CF2)n-SO3)qM2 wherein n is 4 to 21; M2 is H, a metal atom, NR54 (where R5 is as defined above), imidazolium optionally containing a substituent, pyridinium optionally containing a substituent, or phosphonium optionally containing a substituent; and q is 1 or 2.

Provided are a radiation-sensitive composition and a pattern formation method that can exhibit, at the time of pattern formation, a sufficient level of sensitivity, LWR performance, pattern rectangularity, development defect suppression, CDU performance, and pattern circularity. This radiation-sensitive composition includes: a polymer that includes a structural unit (I) represented by formula (1); an onium salt that includes an organic acid anion including a cyclic structure, and an onium cation; and a solvent. (In formula (1), R1 is a hydrogen atom or a C1-20 monovalent organic group, L is a single bond or a divalent linking group, R2 is a C1-5 substituted or unsubstituted monovalent hydrocarbon group, R3 is a C1-10 monovalent organic group, a hydroxy group, a nitro group, a cyano group, an amino group, a halogen atom, or a sulfanyl group, in cases in which there are a plurality of R3s present, the plurality of R3s may be the same as or different from each other, and n is an integer from 0 to 10.)

The invention relates to the technical field of photosensitive dielectric materials, in particular to a photosensitive composition, a preparation method of a pattern, a cured product and an electronic component. The photosensitive composition includes a component (a) graft polymer selected from a compound represented by the following structural formula: # imgabs0 # wherein Ar1 is selected from a tetravalent organic group, Ar2 is selected from a divalent organic group, and R'is selected from any one of an alkyl group, an alkoxy group, a cycloalkyl group and an aryl group; m + n = 5-200, n / (m + n) = 0.05-1, k = 2-10, and x = 0.5-10; a component (b) of a photoacid generator; (c) a thermal cross-linking agent which is a cross-linking agent containing CH2OR '', wherein R'' is selected from hydrogen or a monovalent organic group; and (d) a basic compound. The photosensitive resin composition has the advantages of excellent sensitivity, excellent resolution ratio, capability of copying fine patterns, low warping stress after low-temperature curing, and high chemical stability and cohesiveness.

A film contains a resin and a siloxane compound having a structure A represented by Formula: [RSiO1.5]n (provided that in the formula, R represents an organic group and n represents an integer of 2 or more), where at least one R among plural R's in the structure A is a group including an alkyl group and a difference in solubility parameter (SP value) between the resin and the structure A is 3.0 or less in terms of an absolute value, and surface free energy is 40 mJ / m2 or less.

To provide a resist underlayer film formation method capable of forming a resist underlayer film exhibiting excellent dry etching resistance.SOLUTION: A resist underlayer film formation method for forming a resist under layer film on a substrate includes a step (i) of coating a composition for resist underlayer film formation containing a polymer (A) and an organic solvent onto the substrate and obtaining a coating film, and subjecting the coating film to heat treatment at a temperature of 100°C or higher and 800°C or lower from 10 seconds to 7,200 seconds and curing the coating film, to form an underlayer film precursor film, and a step (ii) of curing the underlayer film precursor film by plasma irradiation, to form a resist underlayer film, wherein as the polymer (A), an aromatic ring-containing resin containing no hydroxyl group and organic group represented by the following general formula (1) in a repeating unit constituting the polymer is used.SELECTED DRAWING: Figure 1

A film contains a resin, and particles of a siloxane compound having a structure represented by Formula: [RSiO1.5] n (in the formula, R represents an organic group and n represents an integer of 2 or more), where at least one R in the formula is a group including an alkyl group, in which in a spatial distribution of the particles present in an evaluation region of 63 μm×42 μm, an integrated value of a statistical quantity L(r) represented by Equation (1) in an interparticle distance r of 0.05 μm or more and 5.00 μm or less is 0 or more and 1.6 or less.L⁡(r):=K⁡(r) / π-r(1)In Equation (1), r represents the interparticle distance, and K(r) represents a Ripley's K function K(r) represented by Equation (2).K⁡(r):=∑i≠jN 1⁢(<semantics definitionURL="">❘<annotation encoding="Mathematica">"\[LeftBracketingBar]"< / annotation>< / semantics>Xi-Xj<semantics definitionURL="">❘<annotation encoding="Mathematica">"\[RightBracketingBar]"< / annotation>< / semantics>≤r) / s⁡(<semantics definitionURL="">❘<annotation encoding="Mathematica">"\[LeftBracketingBar]"< / annotation>< / semantics>Xi-Xj<semantics definitionURL="">❘<annotation encoding="Mathematica">"\[RightBracketingBar]"< / annotation>< / semantics>)λ2(2)In Equation (2), 1(|Xi−Xj|≤r) represents an indicator function, Xi and Xj represent coordinates of points i and j respectively, |Xi−Xj| represents a Euclidean distance between the coordinates Xi and Xj, r represents the interparticle distance, s(|Xi−Xj|) represents an edge correction factor s(x) of an evaluation region represented by Equation (3), x equals |Xi−Xj|, N represents a total number of particles in the evaluation region, and λ represents a number density of particles in the evaluation region.s⁡(x):=Lx⁢Ly-xπ⁢(2⁢Lx+2⁢Ly-x)(3)In Equation (3), Lx and Ly represent lengths (μm) of sides of the evaluation region in an x-axis direction and a y-axis direction respectively, and x=|Xi−Xj| is satisfied, where the Xi and the Xj represent coordinates of points i and j respectively, and the |Xi−Xj| represents a Euclidean distance between the coordinates Xi and Xj.

This organic silicon compound is characterized by being represented by structural formula (1), and has good reactivity while having a monoalkoxysilyl group.(In the formula, X represents a monovalent to trivalent organic group including a polyoxyalkylene structure, an alkylene group having 1-20 carbon atoms, O, S, N, or the like, R1 and R2 each independently represent an alkyl group or the like having 1-10 carbon atoms, Y represents a single bond, O, S, or the like, A1, A2, A3, A4, and A5 each represent a single bond, or a divalent linking group such as a divalent hydrocarbon group having 1-20 carbon atoms, and n represents a number of 1-3.)

A film contains a resin and a siloxane compound having a structure A represented by Formula: [RSiO1.5]n (provided that in the formula, R represents an organic group and n represents an integer of 2 or more), where at least one R among plural R's in the structure A is a group including an alkyl group and a difference in solubility parameter (SP value) between the resin and the structure A is 3.0 or less in terms of an absolute value, and surface free energy is 40 mJ / m2 or less.

The invention provides a sulfinate organic positive alkali metal ion supplement for a secondary battery, and relates to the technical field of secondary batteries. The organic positive electrode alkali metal ion supplement has a structure as shown in the following general formula: [R-SO2]-M < + >, wherein M < + > is a metal cation and is selected from at least one of Li < + >, Na < + > and K < + >; [R-SO2]-is a sulfinate anion, and wherein R is an organic group. The supplement compensates irreversible capacity loss by efficiently releasing active ions, so that the energy density of the battery is improved; the oxidation potential is proper, the environmental stability is excellent, and the catalyst is not needed to decompose and easy to process; decomposition products are harmless, an electrode interface can be optimized, and the cycle life of the battery is remarkably prolonged.

The invention provides a silica hydrogel, a method for removing the same, and a silica hydrogel film. A silica-based composite material modified by an alkyl amine group NH2L and an organic alkyl group R is prepared by adopting a reversed-phase microemulsion method, and a silica colloid material highly modified by an organic group is obtained by controlling the molar weight of alkyl amine silane and alkyl silane and controlling no use and no contact of any alcohol solvent in the whole preparation process. Adding acetone for demulsification, centrifugally collecting, washing solids, drying to obtain a solid silicon dioxide colloid material, and dissolving the solid silicon dioxide colloid material in deionized water to obtain the silicon dioxide hydrogel. The silica hydrogel has solubility in an alcohol solvent and can be removed by the alcohol solvent. The silicon dioxide hydrogel can be combined on the surface of a membrane material to obtain a silicon dioxide hydrogel membrane.

A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or the like; R2 and R3 are each independently a hydrogen atom, a fluorine atom, or the like; and Z+ represents a monovalent radiation-sensitive onium cation. R4 is a monovalent organic group; one of Rf21 and Rf22 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group; Ar is a monovalent organic group including an aromatic ring; R5, R6, R7, and R8 each independently represent a hydrogen atom, a hydroxy group, a halogen atom, or a monovalent organic group; and X is a single bond or a divalent hetero atom-containing group.

Provided are a radiation-sensitive composition and a pattern formation method wherein sensitivity, CDU performance, and development defect suppression can be demonstrated at a sufficient level when next-generation technology is applied. [Solution] This radiation-sensitive composition includes: a polymer that includes a structural unit (I) represented by formula (1); a high-fluorine-content polymer that has a higher mass content of fluorine atoms than the aforementioned polymer; one or more types of onium salts including an organic acid anion and an onium cation; and a solvent, wherein at least some of the organic acid anions in the onium salt or salts include an iodine-substituted aromatic ring structure. (In formula (1), Rα is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; Ar is an aromatic ring with 5-20 members and a valence of (p+q+r+1); R11 is a hydrogen atom or a C1-20 monovalent organic group; in cases in which a plurality of R11 moieties are present, the plurality of R11 moieties are the same as or different from each other; R12 is a cyano group, a nitro group, an alkyl group, a fluorinated alkyl group, or an acyl group; in cases in which a plurality of R12 moieties are present, the plurality of R12 moieties are the same as or different from each other; p and q are each independently an integer from 1 to 6; and r is an integer from 0 to 3.)

Organotin compositions suitable for radiation based patterning have ligands providing fluorinated groups and unsaturated carbon-carbon bonds, such as C═C bonds. The fluorinated groups and unsaturated carbon-carbon bonds may or may not be located on the same ligand. Blends of precursors with different ligands provide added flexibility with respect to precursor design. Fluorinated organometallic compounds can be represented by the formula RUFSn(OR′)3, wherein RUF is an organo group with 1 to 31 carbon atoms with at least one C═C bond and at least one fluorine atom bonded to a carbon, with the organo group forming a C—Sn bond, wherein R′ is an organo group with 1 to 10 carbon atoms. Precursors are suitable for solution based deposition or vapor based deposition.

The purpose of the present invention is to provide a bismaleimide compound which is capable of achieving a high glass transition point (Tg), and with which it is possible to provide a resin composition that satisfies: (1) the dielectric loss tangent is low; (2) the compatibility with organic solvent and resin material, especially with a resin material having a polar functional group is good; and (3) photolithography using an organic solvent or an alkaline aqueous solution is possible. Disclosed is a bismaleimide compound which includes a structural unit represented by general formula (1). In general formula (1), A represents a tetravalent organic group including a cyclic structure. B1 represents a divalent hydrocarbon group having 13 to 200 carbon atoms and no cyclic structure. In cases where a plurality of structural units of general formula (1) are present in the bismaleimide compound, a plurality of A's may be independent and may be the same as or different from each other, and a plurality of B1s may be independent and may be the same as or different from each other.

The present invention is a polymer containing: a structural unit of general formula (1) and / or (2); and a structural unit of general formula (3) and / or (4), where X1 represents a tetravalent organic group, R1 to R4 each represent a monovalent organic group or a hydrogen atom, provided that at least one is a monovalent organic group, L represents a divalent organic group or a divalent atom, X2 represents a divalent organic group, X3 represents a tetravalent organic group, "s" represents 0 or 1, Z represents a divalent bonding group, and X4 represents a divalent organic group. This provides a polymer soluble in an aqueous alkaline solution and usable as a base resin for positive and negative photosensitive resin compositions which enable fine pattern formation, provide high resolution, and have excellent mechanical characteristics even when cured at low temperatures.

The present application provides a preparation method for a thermally expandable microsphere containing hydrophilic organic-modified colloidal silicon dioxide. In the preparation method, hydrophilic organic-modified colloidal silicon dioxide is mixed with a mixture of a monomer material capable of polymerizing to form a thermoplastic polymer shell and at least one foaming agent to form an emulsion, and the emulsion is polymerized to form the thermally expandable microsphere. Surface-modified colloidal silicon dioxide with hydrophilic organic group in the present application has good salt tolerance stability, can be stabilized in brine and is beneficial to the preparation of the thermally expandable microsphere; and the prepared microsphere has a narrow particle size distribution, can be easily dispersed in water and an organic system, and has good wettability. The application also relates to a thermally expandable microsphere and use thereof.

To provide a solventless siloxane composition which is solventless, excellent in temporal stability, and has a low refractive index of a cured film.SOLUTION: A solventless siloxane composition includes a siloxane compound having a structural unit derived from formula (1), and a terminal silanol group stopped by at least one selected from the group consisting of hexamethyldisilazane, chlorotrimethylsilane, trimethylsilyl acetate, N-(trimethylsilyl)diethyamine, N-trimethlysilyl acetoamide, and N-(trimethylsilyl)dimethylamine, where the refractive index of a cured film is 1.45 or lower. (In the formula (1), A1 is a univalent organic group having a radical-polymerizable double bond, A2 is an alkyl group or a siloxy group, and R1 is an alkyl group. Plural R1s may be the same or different. a is 0 or 1.)SELECTED DRAWING: None