377 results about "Photoacid" patented technology

To provide a new photosensitive resin composition having superior adhesion to a Si wafer.SOLUTION: A photosensitive resin composition in one form of the present disclosure comprises a polyhydroxyurea compound having a structural unit represented by formula (1), a photoacid generator, and a crosslinking agent.SELECTED DRAWING: None

To provide a chemically amplified negative resist composition having improved resolution in pattern formation and giving a resist pattern with good LER and pattern fidelity, and to provide a method for forming a resist pattern.SOLUTION: (A) a photoacid generator comprising an anion having the formula (A1) and a cation having a specific structure, and (B) a base polymer comprising a recurring unit having a specific structure with a phenolic hydroxyl group on a side chain.SELECTED DRAWING: None

To provide a chemically amplified positive resist composition comprising an onium salt that can generate an acid with reduced diffusion, and a resist pattern forming process using the resist composition.SOLUTION: A chemically amplified positive resist composition comprising (A) a photoacid generator composed of an onium salt represented by the formula (A), and (B) a base polymer comprising a polymer containing a repeating unit of a specific structure, which is decomposed under the action of acid to increase its solubility in an alkaline developer (where, one of R13 and R14 is a group having a partial structure represented by the formula (a)).SELECTED DRAWING: None

The invention relates to the technical field of solid-liquid interfaces and liquid drop movement and control, in particular to a method and device for achieving left-right controllable spontaneous rotation of liquid drops based on light induction, and the method comprises the following steps that acid liquid drops containing photoacid are dropwise added to the surface of liquid metal; a light source system is adopted to irradiate liquid drops on one side of the liquid drops, the liquid drops are induced to locally release non-uniform H < + > ions, and interface chemistry is initiated to generate gradient change distribution; the light intensity generated by the light source system promotes the formation of asymmetric tension distribution on the liquid drop and liquid metal interface, and drives the liquid drop to rotate along a preset direction; and by changing the irradiation position, the liquid drops can be switched between left rotation and right rotation. According to the present invention, by using the mechanism of combining the interface Marangoni effect and the light-induced acidity regulation and control, the stable and rapid spinning behavior of the liquid drop can be represented by adjusting the position, the irradiation time and the irradiation intensity of the illumination region, and the rotation direction can be reversibly switched between the left rotation and the right rotation.

The invention discloses a modeling method of an optical proximity correction model and an optical proximity correction method. The modeling method comprises the following steps: providing a plurality of bright field test patterns and a plurality of dark field test patterns; obtaining the number ratio of the bright field areas to the dark field areas in the actual layout; extracting a bright field test pattern and a dark field test pattern with the same proportion; and establishing an optical proximity correction model according to the extracted bright field test pattern and the corresponding bright field photoresist pattern as well as the feature size difference between the extracted dark field test pattern and the corresponding dark field photoresist pattern. The bright field test patterns and the dark field test patterns with the same proportion are sampled on the basis of the number proportion of the bright field areas and the dark field areas in the actual layout, and the photoacid diffusion length in the optical proximity correction model established on the theoretical basis has high pertinence, so that the accuracy of the photoacid diffusion length corresponding to the actual layout is effectively improved; the actual layout is optically corrected through the optical proximity correction model, and the optical proximity correction precision can be effectively improved.

The invention relates to a method for purifying an electronic-grade sulfonium salt photoacid generator. The method comprises the following steps: heating, preparing a photoacid generator stock solution, purifying through ion exchange resin, cooling, recrystallizing, carrying out solid-liquid separation, washing crystals and the like to obtain the high-purity photoacid generator, so that the metal content in the photoacid generator can be effectively reduced, the single metal content is less than 5ppb, and the yield is up to 80-90%. And mother liquor is collected and purified by resin and can be used for preparing photoacid stock solution again. The operation effectively reduces the use of an organic solvent and the generation of wastewater, can further improve the recrystallization yield, and meets the requirements of green and sustainable development.

The invention discloses a photoetching hot spot detection method and device based on dynamic subgraph feature fusion, and relates to the technical field of integrated circuits, and the method comprises the following steps: orthogonally cutting a polygon in a to-be-detected photoetching layout slice sample into rectangles, taking the central point of each rectangle as a node, and constructing to-be-detected graph structure data in combination with embedded features associated with each node; determining the radius of a sub-graph according to the photoacid diffusion length and the local graph density associated with the to-be-measured photoetching layout slice sample; and through the trained dynamic sub-graph aggregation graph kernel convolutional network model, according to the sub-graph radius, constructing a sub-graph of each node by using the to-be-detected graph structure data, extracting features based on each sub-graph to carry out hot spot detection, and outputting a photoetching hot spot detection result. Based on the scheme, the radiuses of the sub-graphs are dynamically divided by adopting photoetching process parameters to reduce empirical static hypothesis errors, visual decomposition and complex structures of the analysis graphs are carried out in a sub-graph feature extraction and fusion mode to enhance the interpretability of hot spot detection, and the reliability of hot spot detection is improved.

To provide an onium salt for use in a chemically amplified resist composition that exhibits high solvent solubility, high sensitivity, and high contrast in photolithography using high-energy radiation, while also offering superior lithography properties such as exposure latitude (EL) and line width roughness (LWR); a chemically amplified resist composition comprising the onium salt as a photoacid generator; and a pattern forming process using the chemically amplified resist composition.SOLUTION: The present invention provides an onium salt represented by formula (1).SELECTED DRAWING: None

In a method of patterning a substrate, a first relief pattern is formed based on a first layer deposited over the substrate. Openings in the first relief pattern are filled with a reverse material. The first relief pattern is then removed from the substrate and the reverse material remains on the substrate to define a second relief pattern. A fill material is deposited over the substrate, the fill material being in contact with the second relief pattern and being sensitive to photoacid generated by a photoacid generator in the second relief pattern. Selected portions of the second relief pattern are exposed to a first actinic radiation to generate photoacid in the selected portions of the second relief pattern. The photoacid is driven from the selected portions of the second relief pattern into portions of the fill material such that the portions of the fill material become soluble to a predetermined developer.

To provide a photoacid generator, a photoresist composition and a pattern forming method.SOLUTION: There is provided a photoacid generator containing a portion of the formula (1): wherein, Ar1 is a substituted or unsubstituted aryl group; R1 is an alkyl or an aryl group, each of which may be substituted or unsubstituted, here, Ar1 and R1 are optionally connected to each other by a single bond or a divalent linking group to form a ring; Y is a single bond or a divalent group; * is a bonding point of a portion of the photoacid generator to another atom. This photoacid generator compound finds specific application in photoresist compositions which can be used to form lithographic patterns for the formation of electronic devices.SELECTED DRAWING: None

[Task] To provide a cationically curable composition that cures in both the exposed area and the unexposed area in a mold with a complex geometry and is suitable for application as an optical element or adhesive. [Solution] Providing a cationically curable composition comprising a fluorene skeleton-containing epoxy compound (A) containing naphthalenediyl groups which may have a substituent, a mono- or bifunctional alicyclic epoxy compound (B), a photoacid generator (C) and an acid multiplying agent (D) and curing even in the unexposed area in a mold having a complex geometry.

Disclosed herein is a photosensitive composition comprising a) at least one photoacid generator; b) at least one Novolak polymer; c) at least one acrylate polymer, comprising a component having structure (I); d) at least one glycidyl hydroxy benzoic acid condensate material comprising one or more compounds having structure (II); e) at least one heterocyclic thiol compound comprising a ring structure chosen from the general structures (III), (IIIa) or (IIIb); and f) at least one solvent. Disclose herein are also the methods of using this composition to form a resist pattern and the methods of using these resist patterns to produce metal lines. Disclosed herein are also compounds and mixtures of compounds having structure (II).

The invention provides a purification method of a naphthalimide high-purity electronic-grade photoacid generator. The method solves the problem that photo-acid cannot be purified by traditional recrystallization or directly through ion exchange columns and other methods. The method comprises the following steps: firstly synthesizing and preparing 1, 3-diketone-2-hydroxy-6-(1-hexyne) benzisoquinoline, then reacting with triethylamine and trifluoromethylsulfonyl chloride to generate a crude product 1, 3-diketone-2-(1, 1, 1-trifluoromethyl) methanesulfonic ester-6-(1-hexyne) benzisoquinoline, removing impurities from normal hexane to obtain a pure product, sublimating the material into a gas phase by using a quartz vacuum sublimation instrument, and purifying to obtain the 1, 3-diketone-2-(1, 1, 1-trifluoromethyl) methanesulfonic ester-6-(1-hexyne) benzisoquinoline. And then passing through Pure MTS9500 amino phosphonic acid type chelating resin, and finally cooling in a quartz tube to obtain the high-purity electronic-grade photoacid generator. According to the invention, the stability is high, the metal ion content is low, the purification process is convenient to process, the product is used as a photoresist-level core main material, the product is widely applied in the fields of semiconductor photoresist, other imaging systems, photocureable coatings and the like, the market scale is continuously expanded, and the product is an indispensable key material in semiconductor manufacturing and other related fields.

The invention relates to a chemically amplified negative resist composition and a resist pattern forming method. The present invention addresses the problem of providing: a chemically amplified negative resist composition which is capable of improving resolution during pattern formation and which is capable of obtaining a resist pattern having excellent LER and pattern loyalty; and a method for forming a resist pattern. A chemically amplified negative resist composition containing (A) a photoacid generator comprising an onium salt represented by the following formula (A), and (B) a base polymer comprising a polymer containing a repeating unit represented by the following formula (B1). In the # imgabs0 # formula, one of R13 and R14 is a group having a partial structure represented by formula (a). # imgabs1 #

A resist composition comprising an acid compound, a photoacid generator of iodonium salt type and / or a photo-decomposable quencher of iodonium salt type, and a base polymer has a high sensitivity, reduced edge roughness or size variation, improved resolution and satisfactory storage stability.

A photoresist composition comprising one or more non-solvent alkali-insoluble substrates present in a total amount exceeding 50% by weight based on the total solids content of the photoresist composition, and a nonpolymeric ionic photoacid generator compound comprising an anion and an iodonium or sulfonium cation, wherein the anion is defined by formula (1) as defined herein. [Formula 1] TIFF2026528972000047.tif49166(wherein b is an integer from 1 to 4, and at least one R) 1 (This is a group that is substituted with a halogen.) A photoresist composition comprising a nonpolymeric ionic photoacid generator compound and a solvent, as represented by [formula].

Provided are a resist top coating composition and a method of forming a pattern using the same. The resist top coating composition includes a copolymer including a first structural unit represented by Chemical Formula M-1 and a second structural unit represented by Chemical Formula M-2; a photoacid generator; and a solvent, in which the photoacid generator is a nonionic compound including an organic sulfonate group or an ionic compound including, as an anion, at least one selected from the group consisting of a conjugated base of an inorganic acid and a conjugated base of an organic sulfonic acid.

Provided is a novel negative photosensitive resin composition having excellent resolution without using a resin component that can be subject to PFAS limitation. Provided is a negative photosensitive resin composition containing a polyhydroxy amide compound containing a structural unit represented by formula (1), a crosslinking agent, and a photoacid generator.

To provide an onium salt used for a chemically amplified resist composition excellent in solvent solubility, having high sensitivity and high contrast and excellent in lithography performance such as LWR, CDU, MEF, EL and DOF in photolithography using high energy rays, a chemically amplified resist composition containing the onium salt as a photoacid generator, and a pattern forming method using the chemically amplified resist composition.SOLUTION: An onium salt having the formula (1): SELECTED DRAWING: None

A photoresist composition comprising one or more alkali-insoluble, non-solvent base materials present in a combined amount of more than 50 wt% based on the total solids of the photoresist composition; a non-polymeric ionic photoacid generator compound comprising an anion and an iodonium or sulfonium cation, the anion being represented by formula (1); a photodegradable quencher, a basic quencher or a combination thereof and a solvent: where Ar 1 for a monocyclic or polycyclic aromatic C 3-60 -Group stands; L 1 L represents a single bond or one or more binary linkage groups. 1 is free of fluorine; Z 1 an anion-stabilizing group, wherein Z 1is designed in such a way that it forms an intramolecular non-covalent bond with the sulfonate anion group, forming a ring with 5 to 8 atoms; and the remaining substituents are defined as shown here.

This invention discloses a quinoline hydrazone ligand, its Fe(II) spin-crossover complex, and a method for synthesis. The quinoline hydrazone ligand is ( E )-4-bromo- N' -(quinoline-8-methylene)benzoylhydrazine, with the structural formula shown, and the complex structure shown. The ligands of this invention have sufficiently strong coordination ability with metals. The complex is not easily oxidized in air, does not easily dissociate in solution, and has good acid resistance. The complex is in a low-spin state and is suitable for photoacid switching in solution, making it applicable to fields such as spin-crossed molecular switches and acid-base stimulation sensors.

The present invention provides a chemically amplified negative resist composition and a resist pattern formation method that improve resolution during pattern formation and enable the creation of resist patterns with good LER and pattern fidelity. [Solution] (A) A chemically amplified negative resist composition comprising a photoacid generator consisting of an onium salt represented by the following formula (A), and a base polymer containing a polymer with repeating units of a specific structure. TIFF2026090781000379.tif29102

A photoresist composition comprising one or more non-solvent base-insoluble base materials present in a combined amount greater than 50 wt% based on the total solids of the photoresist composition; a non-polymeric ionic photoacid generator compound comprising an anion and an iodonium or sulfonium cation, wherein the anion is represented by formula (1); a photodecomposable quencher, a basic quencher, or a combination thereof; and a solvent, wherein Ar 1 is a monocyclic or polycyclic C 3‑60 aromatic group; L 1 is a single bond or one or more divalent linking groups, wherein L 1 contains no fluorine; Z 1 comprises an anion stabilizing group, wherein Z 1 is configured to form an intramolecular non-covalent bond with a sulfonate anion group to form a ring having 5 to 8 atoms; and the remaining substituents are as defined herein. (1)

Provided are: a curable resin composition that is capable of meeting PFAS regulations and has improved resolution; a dry film that has a resin layer formed using the curable resin composition; and a cured product that is formed using the curable resin composition or the resin layer of the dry film. An embodiment of the present invention includes a polyhydroxyamide compound containing the structure of formula (1), a crosslinking agent, a photoacid generator, and a phenol compound. The polyhydroxyamide compound does not have a perfluoroalkyl skeleton. The weight-average molecular weight of the phenol compound is 5,000 or less. (In formula (1), R1 is a divalent organic group, and R2 is a tetravalent organic group.)

To provide photoacid generators, photoresist compositions, and pattern formation methods.SOLUTION: A photoacid generator includes: an organic cation; and an anion including an anionic core, wherein the anionic core includes a cyclopentadienide group, wherein the cyclopentadienide group is substituted with an organic group including a semi-metal element, and wherein the anion is substituted with one or more electron withdrawing groups.

[Problem] Provided are: a curable resin composition which exhibits excellent adhesion to a silicon substrate; a dry film comprising a resin layer that is formed from said curable resin composition; and a cured product which is obtained by curing said curable resin composition or the resin layer of said dry film. [Solution] The curable composition is a curable composition set forth in claim 1 comprising (A) a polyhydroxyamide compound, (B) a crosslinking agent, (C) a compound having a phenolic hydroxyl group and a reactive double bond, and (D) a photoacid generator, wherein the crosslinking agent (B) includes a compound having at least one selected from the group consisting of a methoxymethyl group and a methylol group in the molecular structure, and the polyhydroxyamide compound (A) is a compound including structural units represented by formulae (1) and (2). {In formula (1), R1 is a divalent organic group, and R2 is a tetravalent organic group.} {In formula (2), R3 is a divalent organic group and R4 is a divalent organic group that does not include a hydroxyl group.}

A resist composition which has as components a phenolic resin component, a photoactive 2,1,5-diazonaphthoquinonesulfonate component (PAC), a solvent component and that does not contain a photo acid generator (PAG). The PAC is a free PAC, a coupled PAC (PACb) or a combination thereof that includes a substituted or unsubstituted 2,1,5-DNQ material or compound onto which a substituted or unsubstituted 2,1,5-DNQ material is appended that, when UV exposed, do not form sulfonic acid. The phenolic resin component is a Novolak derivative in which some or all the free hydroxy groups are protected with an acid cleavable acetal moiety which can include a PACb moiety. A method whereby this composition is used in either thick or thin film photoresist device manufacturing methodologies.

An embodiment method of processing a substrate includes the patterning a photoresist layer formed over the substrate using a photolithographic technique, and spin coating a first overcoat material over the patterned photoresist layer, where the first overcoat material includes a photo-acid generator (PAG) and an acid amplifier (AA). The method includes exposing the first overcoat material to an ultraviolet (UV) irradiation to generate first acid from the PAG, where the first acid decomposes the AA to generate second acid, and a total amount of the second acid generated from the decomposition of the AA being greater than a total amount of first acid generated from the PAG. The method includes diffusing the second acid into a portion of the patterned photoresist layer, where the diffused second acid changes a solubility of the portion such that the portion becomes soluble in a developing solution.

The invention provides a purification method of a high-purity electronic-grade photoacid generator derived from (4, 7-dihydroxy-1-naphthyl) dimethyl sulfonium trifluoromethanesulfonate. The problem that photo-acid cannot be purified by traditional recrystallization or directly through an ion exchange column and the like is solved, and the electronic grade standard is achieved. The preparation method comprises the following steps: firstly synthesizing (4, 8-dihydroxy-1-naphthyl) dimethyl sulfonium hydrochloride, then reacting with sodium trifluoromethanesulfonate to generate a crude product (4, 7-dihydroxy-1-naphthyl) dimethyl sulfonium trifluoromethanesulfonate, removing impurities from ethyl acetate, recrystallizing by using methanol and dichloromethane to obtain a pure product, and finally adsorbing by using resin to obtain the high-purity electronic-grade photoacid generator. According to the invention, the stability is high, the metal ion content is low, the purification process is convenient to process, the product is used as a photoresist-level core main material, the product is widely applied in the fields of semiconductor photoresist, other imaging systems, photocureable coatings and the like, the market scale is continuously expanded, and the product is an indispensable key material in semiconductor manufacturing and other related fields.

Photoacid generators comprising a moiety of formula (1):wherein: Ar1 is a substituted or unsubstituted aryl group; R1 is an alkyl or aryl group, each of which may be substituted or unsubstituted, wherein Ar1 and R1 are optionally connected together by a single bond or a divalent linking group to form a ring; Y is a single bond or a divalent group; and * is the point of attachment of the moiety to another atom of the photoacid generator. The photoacid generator compounds find particular use in photoresist compositions that can be used to form lithographic patterns for the formation of electronic devices.