370 results about "Photoacid" patented technology

A photoacid compound having the following general structure:<paragraph lvl="0"><in-line-formula>R-O(CF2)nSO3X</in-line-formula>wherein n is an integer between about 1 to 4; R is selected from the group consisting of: substituted or unsubstituted C1-C12 linear or branched alkyl or alkenyl, substituted or unsubstituted araalkyl, substituted or unsubstituted aryl, substituted or unsubstituted bicycloalkyl, substituted or unsubstituted tricycloalkyl, hydrogen, alkyl sulfonic acid, substituted or unsubstituted perfluoroalkyl, the general structure F((CF2)pO)m(CF2)q- wherein p is between about 1 to 4, m is between about 0 to 3 and q is between about 1 to 4, and substituted or unsubstituted partially fluorinated alkyl, halofluoroalkyl, perfluoroalkylsulfonic, or glycidyl; and X is selected from the group consisting of: organic cations and covalently bonded organic radicals.

Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.

The present invention relates to a novel photoresist composition that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist as well as novel photoacid generators.

The novel photoresist comprises a) a polymer containing an acid labile group, and b) a novel mixture of photoactive compounds, where the mixture comprises a lower absorbing compound selected from structure 1 and 2, and a higher absorbing compound selected from structure 4 and 5,

• • where, R₁ and R₂ R₅, R₆, R₇, R₈, and R₉ are defined herein; m=1–5; X⁻ is an anion, and Ar is selected from naphthyl, anthracyl, and structure 3,
  • where R₃₀, R₃₁, R₃₂, R₃₃, and R₃₄ are defined herein.

A sulfonic acid onium salt represented by the following formula (1) can be used as a superior radiosensitive acid generator for resist compositions. It is possible to form a good pattern by using a resist composition containing this sulfonic acid onium salt.

In formula (1), R¹ represents a monovalent organic group, and Q⁺ represents a sulfonium cation or iodonium cation.

Sulfonate salts have the formula: R¹COOCH₂CH₂CF₂CF₂SO₃⁻M⁺ wherein R¹ is alkyl, aryl or hetero-aryl, M⁺ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oxime sulfonates and sulfonyloxyimides derived from these salts are effective photoacid generators in chemically amplified resist compositions.

Photoacid generators generate sulfonic acids of formula (1a) or (1c) upon exposure to high-energy radiation.

R¹—COOCH(CF₃)CF₂SO₃⁺H⁺  (1a)

R¹—O—COOCH(CF₃)CF₂SO₃⁻H⁺  (1c)

R¹ is a C₂₀-C₅₀ hydrocarbon group having a steroid structure. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.

A compound has formula (I):

Q-O-(A)-Z⁻G⁺  (I)

wherein Q is a halogenated or non-halogenated, C_2-30 olefin-containing group, A is a fluorine-substituted C_1-30 alkylene group, a fluorine-substituted C_3-30 cycloalkylene group, a fluorine-substituted C_6-30 arylene group, or a fluorine-substituted C_7-30 alkylene-arylene group, Z is an anionic group comprising sulfonate, sulfonamide, or sulfonamide, and G⁺ has formula (II):

wherein X is S or I, each R⁰ is halogenated or non-halogenated and is independently C_1-30 alkyl group; a polycyclic or monocyclic C_3-30 cycloalkyl group; a polycyclic or monocyclic C_4-30 aryl group; or a combination of these, wherein when X is S, one of the R⁰ groups is optionally attached to one adjacent R⁰ group by a single bond, and a is 2 or 3, wherein when X is I, a is 2, or when X is S, a is 3. A copolymer, a photoresist, a coated substrate and method of patterning are disclosed.

A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin, (C) a photoacid generator, and optionally, (D) a dissolution rate regulator. The base resin (B) is a hydroxystyrene copolymer having different acid labile groups and Mw of 3,000-300,000. The resist composition is highly sensitive to actinic radiation such as deep-UV, electron beam and X-ray, can be developed with aqueous base to form a pattern, and is thus suitable for use in a fine patterning technique.

Disclosed is a fluorinated sulfonic acid salt or fluorinated sulfonic acid group-containing compound having a structure represented by the following general formula (A).

In the formula, n indicates an integer of 1 to 10; R indicates a substituted or unsubstituted C₁-C₂₀ linear, branched or cyclic alkyl group, a substituted or unsubstituted C₁-C₂₀ linear, branched or cyclic alkenyl group, a substituted or unsubstituted C₆-C₁₅ aryl group, or a C₄-C₁₅ heteroaryl group; and a indicates 1 or 0. A photoacid generator containing the above fluorinated sulfonic acid salt or fluorinated sulfonic acid group-containing compound shows high sensitivity to an ArF excimer laser or the like, presents no concerns about human body accumulation, can generate an acid (photoacid) of sufficiently high acidity, and exhibits high solubility in a resist solvent and good compatibility with a resist resin.

Novel classes of ionic photoacid generator (PAGs) compounds having relatively environmentally friendly anions with no perfluorooctyl sulfonate (no-PFOS) are provided and photoresist composition that comprise such compounds. The new PAGs produce a photoacid having a short or no perfluoro alkyl chain (ie., no-PFOS) attached to a variety of functional groups. The PAGs of the invention are useful as photoactive component in the chemically amplified resist compositions used for microfabrication.

Photoresist additive polymers and photoresist formulations that can be used in immersion lithography without the use of an additional topcoat. The resist compositions include a photoresist polymer, at least one photoacid generator, a solvent; and a photoresist additive polymer. Also a method of forming using photoresist formulations including photoresist additive polymers.

An apparatus and method for manufacturing a device using lithography. An underlayer is deposited on a first surface, the underlayer of which is composed of a first resist material adapted to be substantially free of photoacid generators and which includes an acid labile polymer group. A topcoat layer is deposited on top of the underlayer which is composed of a second resist material adapted to be substantially free of acid labile polymer groups and including a photoacid generator. Upon exposure of a portion of the topcoat layer to radiation through to form an exposed region and an unexposed region of a lithographic pattern, photoacid is generated by the topcoat layer and delivered to an interface between the underlayer and the topcoat layer such that the generated photoacid at the exposed region deprotects the acid labile polymer groups at the underlayer top surface to form a deprotected region and a protected region. These two regions cooperate to define an image of the lithographic pattern in the underlayer top surface. The resulting image in the undercoat may then be silylated to form a resistant mask.

Sulfonate salts have the formula: HOCH₂CH₂CF₂CF₂SO₃⁻M⁺ wherein M⁺ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oxime sulfonates and sulfonyloxyimides derived from these salts are effective photoacid generators in chemically amplified resist compositions.

The present invention is directed to novel radiation-sensitive, wet developable bottom antireflective coating (DBARC) compositions and their use in semiconductor device manufacturing. The DBARC compositions contain a photoacid generator that produces a photoacid upon exposure to activating radiation. In a photolithographic imaging process, the relatively strong photoacid reduces or eliminates scumming. Further, the relatively large size of the photoacid limits its diffusion through the DBARC, thus minimizing or preventing undercut. The inventive method also limits diffusion of the photoacid by controlling the temperature of the post-exposure baking step. Use of the DBARC compositions with a photoresist in photolithography results in highly resolved features having essentially vertical profiles and no scumming and no undercut, which is critical as microelectronics and semiconductor components become increasingly miniaturized.