152 results about "Photoacid" patented technology

The invention relates to a method for purifying an electronic-grade sulfonium salt photoacid generator. The method comprises the following steps: heating, preparing a photoacid generator stock solution, purifying through ion exchange resin, cooling, recrystallizing, carrying out solid-liquid separation, washing crystals and the like to obtain the high-purity photoacid generator, so that the metal content in the photoacid generator can be effectively reduced, the single metal content is less than 5ppb, and the yield is up to 80-90%. And mother liquor is collected and purified by resin and can be used for preparing photoacid stock solution again. The operation effectively reduces the use of an organic solvent and the generation of wastewater, can further improve the recrystallization yield, and meets the requirements of green and sustainable development.

In a method of patterning a substrate, a first relief pattern is formed based on a first layer deposited over the substrate. Openings in the first relief pattern are filled with a reverse material. The first relief pattern is then removed from the substrate and the reverse material remains on the substrate to define a second relief pattern. A fill material is deposited over the substrate, the fill material being in contact with the second relief pattern and being sensitive to photoacid generated by a photoacid generator in the second relief pattern. Selected portions of the second relief pattern are exposed to a first actinic radiation to generate photoacid in the selected portions of the second relief pattern. The photoacid is driven from the selected portions of the second relief pattern into portions of the fill material such that the portions of the fill material become soluble to a predetermined developer.

To provide a photoacid generator, a photoresist composition and a pattern forming method.SOLUTION: There is provided a photoacid generator containing a portion of the formula (1): wherein, Ar1 is a substituted or unsubstituted aryl group; R1 is an alkyl or an aryl group, each of which may be substituted or unsubstituted, here, Ar1 and R1 are optionally connected to each other by a single bond or a divalent linking group to form a ring; Y is a single bond or a divalent group; * is a bonding point of a portion of the photoacid generator to another atom. This photoacid generator compound finds specific application in photoresist compositions which can be used to form lithographic patterns for the formation of electronic devices.SELECTED DRAWING: None

The invention provides a purification method of a naphthalimide high-purity electronic-grade photoacid generator. The method solves the problem that photo-acid cannot be purified by traditional recrystallization or directly through ion exchange columns and other methods. The method comprises the following steps: firstly synthesizing and preparing 1, 3-diketone-2-hydroxy-6-(1-hexyne) benzisoquinoline, then reacting with triethylamine and trifluoromethylsulfonyl chloride to generate a crude product 1, 3-diketone-2-(1, 1, 1-trifluoromethyl) methanesulfonic ester-6-(1-hexyne) benzisoquinoline, removing impurities from normal hexane to obtain a pure product, sublimating the material into a gas phase by using a quartz vacuum sublimation instrument, and purifying to obtain the 1, 3-diketone-2-(1, 1, 1-trifluoromethyl) methanesulfonic ester-6-(1-hexyne) benzisoquinoline. And then passing through Pure MTS9500 amino phosphonic acid type chelating resin, and finally cooling in a quartz tube to obtain the high-purity electronic-grade photoacid generator. According to the invention, the stability is high, the metal ion content is low, the purification process is convenient to process, the product is used as a photoresist-level core main material, the product is widely applied in the fields of semiconductor photoresist, other imaging systems, photocureable coatings and the like, the market scale is continuously expanded, and the product is an indispensable key material in semiconductor manufacturing and other related fields.

A resist composition comprising an acid compound, a photoacid generator of iodonium salt type and / or a photo-decomposable quencher of iodonium salt type, and a base polymer has a high sensitivity, reduced edge roughness or size variation, improved resolution and satisfactory storage stability.

Provided is a novel negative photosensitive resin composition having excellent resolution without using a resin component that can be subject to PFAS limitation. Provided is a negative photosensitive resin composition containing a polyhydroxy amide compound containing a structural unit represented by formula (1), a crosslinking agent, and a photoacid generator.

To provide an onium salt used for a chemically amplified resist composition excellent in solvent solubility, having high sensitivity and high contrast and excellent in lithography performance such as LWR, CDU, MEF, EL and DOF in photolithography using high energy rays, a chemically amplified resist composition containing the onium salt as a photoacid generator, and a pattern forming method using the chemically amplified resist composition.SOLUTION: An onium salt having the formula (1): SELECTED DRAWING: None

A photoresist composition comprising one or more alkali-insoluble, non-solvent base materials present in a combined amount of more than 50 wt% based on the total solids of the photoresist composition; a non-polymeric ionic photoacid generator compound comprising an anion and an iodonium or sulfonium cation, the anion being represented by formula (1); a photodegradable quencher, a basic quencher or a combination thereof and a solvent: where Ar 1 for a monocyclic or polycyclic aromatic C 3-60 -Group stands; L 1 L represents a single bond or one or more binary linkage groups. 1 is free of fluorine; Z 1 an anion-stabilizing group, wherein Z 1is designed in such a way that it forms an intramolecular non-covalent bond with the sulfonate anion group, forming a ring with 5 to 8 atoms; and the remaining substituents are defined as shown here.

The present invention provides a chemically amplified negative resist composition and a resist pattern formation method that improve resolution during pattern formation and enable the creation of resist patterns with good LER and pattern fidelity. [Solution] (A) A chemically amplified negative resist composition comprising a photoacid generator consisting of an onium salt represented by the following formula (A), and a base polymer containing a polymer with repeating units of a specific structure. TIFF2026090781000379.tif29102

A photoresist composition comprising one or more non-solvent base-insoluble base materials present in a combined amount greater than 50 wt% based on the total solids of the photoresist composition; a non-polymeric ionic photoacid generator compound comprising an anion and an iodonium or sulfonium cation, wherein the anion is represented by formula (1); a photodecomposable quencher, a basic quencher, or a combination thereof; and a solvent, wherein Ar 1 is a monocyclic or polycyclic C 3‑60 aromatic group; L 1 is a single bond or one or more divalent linking groups, wherein L 1 contains no fluorine; Z 1 comprises an anion stabilizing group, wherein Z 1 is configured to form an intramolecular non-covalent bond with a sulfonate anion group to form a ring having 5 to 8 atoms; and the remaining substituents are as defined herein. (1)

Provided are: a curable resin composition that is capable of meeting PFAS regulations and has improved resolution; a dry film that has a resin layer formed using the curable resin composition; and a cured product that is formed using the curable resin composition or the resin layer of the dry film. An embodiment of the present invention includes a polyhydroxyamide compound containing the structure of formula (1), a crosslinking agent, a photoacid generator, and a phenol compound. The polyhydroxyamide compound does not have a perfluoroalkyl skeleton. The weight-average molecular weight of the phenol compound is 5,000 or less. (In formula (1), R1 is a divalent organic group, and R2 is a tetravalent organic group.)

[Problem] Provided are: a curable resin composition which exhibits excellent adhesion to a silicon substrate; a dry film comprising a resin layer that is formed from said curable resin composition; and a cured product which is obtained by curing said curable resin composition or the resin layer of said dry film. [Solution] The curable composition is a curable composition set forth in claim 1 comprising (A) a polyhydroxyamide compound, (B) a crosslinking agent, (C) a compound having a phenolic hydroxyl group and a reactive double bond, and (D) a photoacid generator, wherein the crosslinking agent (B) includes a compound having at least one selected from the group consisting of a methoxymethyl group and a methylol group in the molecular structure, and the polyhydroxyamide compound (A) is a compound including structural units represented by formulae (1) and (2). {In formula (1), R1 is a divalent organic group, and R2 is a tetravalent organic group.} {In formula (2), R3 is a divalent organic group and R4 is a divalent organic group that does not include a hydroxyl group.}

The present invention relates to a naphthalimide sulfonate derivative, and a photoacid generator and a photoresist composition each comprising same and, more specifically, to a naphthalimide sulfonate derivative compound, and a photoacid generator and a photoresist composition each comprising same, wherein the compound has excellent absorbance for light of i-line (365 nm) wavelength, is greatly easy to prepare into a polymerizable composition due to very high solubility in an organic solvent, has good thermal stability, and shows a favorable acid generation rate.

The application provides a method for realizing color continuous gradient transition by using DLP light curing 3D printing, and belongs to the technical field of additive manufacturing. The steps comprise: providing a dual-wavelength DLP light curing printing device, adjusting a printing focal plane, segmenting and slicing a three-dimensional digital model, setting dual-wavelength exposure parameters, preparing a photosensitive resin slurry containing components such as pH responsive dyes and photoacid generators, completing layer-by-layer printing through reciprocating dynamic switching of visible light curing forming and ultraviolet light color regulation, and obtaining a target workpiece after post-processing. The method realizes high-resolution, continuous gradient integrated forming of multi-color materials through single-light-machine dual-wavelength (365nm ultraviolet light and 460nm visible light) ultra-high-speed dynamic switching combined with a specific formula of photosensitive resin slurry.

The invention provides a sulfonate photoacid generator and a preparation method and application thereof.The sulfonate photoacid generator has the structure shown in the general formula (I), the photoacid generator does not contain fluorine, the acidity of sulfonic acid generated through photolysis of the photoacid generator is not weaker than that of traditional fluorine-containing photoacid, and the problems that according to an existing sulfonate photoacid generator, acid radicals contain fluorine, and the acid radicals are not prone to being damaged are solved. The sulfonate photoacid generator does not contain the problem of weak acidity of fluorine acid radicals, and can improve the photosensitivity and resolution of the photosensitive composition.

This negative photosensitive film comprises a tri- or higher-functional epoxy resin, a photoacid generator, and an adhesion enhancer having a functional group which is hydrolyzed to form a hydroxy group, and is characterized by having a moisture content of 0.1-1 mass%. A dry film (100) comprises a substrate film (110) and, laminated thereto in the following order, the negative photosensitive film (120) according to the present invention and a cover film (150). A multilayer film (130) comprises a substrate film (110) and, laminated thereto, the negative photosensitive film (120) according to the present invention. The present invention can provide: the negative photosensitive film (120) which has enhanced adhesion to substrates and is less apt to form inclusions therein; the multilayer film (130) and the dry film (100) in which the negative photosensitive film (120) has been laminated; and a negative photosensitive composition.

A photoresist composition comprising one or more non-solvent base insoluble base materials present in a combined amount of greater than 50 wt% based on the total solids of the photoresist composition; a non-polymeric ionic photoacid generator compound comprising an anion and an iodonium or sulfonium cation wherein the anion is represented by formula (1) as defined herein; and a solvent wherein the photoresist composition does not contain a photoacid generator that produces a photoacid having a higher acidity than a photoacid produced by a non-polymeric ionic photoacid generator compound. (1)

Resin composition comprising at least three components (a), (b) and (c); wherein component (a) is a polymer having a structure represented by the following formula (1), component (b) comprises thermal crosslinking agent (b1) and thermal crosslinking agent (b2), and component (c) is a photosensitizer, wherein R1 and R2 are independently selected from groups containing at least one atom other than hydrogen; and R3 and R4 are independently selected from a hydrogen atom or an organic group having 1 to 20 carbon atoms, and n is an integer selected from 1 to 10, wherein the thermal crosslinking agent (b1) is selected from a low-temperature thermal crosslinking compound having a thermal crosslinking temperature of 120 to 180 °C, and from a structure represented by the following formula (2), wherein R8 is selected from an organic group containing 2 to 30 carbon atoms;R9 is selected from an organic group containing 1 to 10 carbon atoms; s is an integer selected from 1 to 4, p is an integer selected from 1 to 16, and s + p > 2, wherein the thermal crosslinking agent (b2) is selected from a thermal crosslinking compound with a thermal crosslinking temperature of 180 to 400 °C and from a structure containing an acrylic acid with one or more structures represented by the following formula (5), wherein R10 is selected from an organic group containing 2 to 25 carbon atoms, and z is an integer selected from 1 to 10, wherein the photosensitizer of component (c) is a photoacid former.

Provided is an actinic ray-sensitive or radiation-sensitive resin composition containing a resin, a photoacid generator, and acid diffusion control agents, wherein at least one of the acid diffusion control agents contains a compound having a specific structure. Also provided are an actinic ray-sensitive or radiation-sensitive film using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern formation method, and a method for manufacturing an electronic device.

A positive photosensitive resin composition according to the present invention comprises (A) an alkali-soluble resin, (B) a photoacid generator, which is a compound that generates an acid when exposed to light, and (C) a thermal crosslinking agent, which is a compound that induces the crosslinking of the alkali-soluble resin when exposed to heat. The alkali-soluble resin has a polymer chain containing an imide-based constituent unit which is a group obtained by removing one or more hydrogen atoms from an imide compound represented by formula (I).

The invention discloses a photosensitive nanocrystal material and a preparation method thereof, and belongs to the technical field of photoresist production processes. In order to solve the problems that an existing photoresist material is low in light absorption efficiency, insufficient in resolution ratio and complex in preparation, an Hf / Zr mixed metal alkoxide precursor is adopted, and the photoresist material is prepared through the steps of anhydrous hydrolysis, two-phase reaction, surface modification, photosensitive addition and the like. The method specifically comprises the following steps: (i) dropwise adding ultrapure water at a low temperature to react with a first ligand A to form 1.5-3nm metal oxide nanocrystalline sol; (ii) reacting alkali liquor in the two-phase system to grow crystals; (iii) carrying out surface modification on the bridged ligand B and the second ligand C; and (iv) adding a photoacid generator and a free radical photoinitiator, filtering with a filter membrane, and pre-drying to form the membrane. The material is suitable for a negative photoetching process, and the EUV absorption efficiency is gt; 85%, LWRlt; 2 nm. The method is simple to operate, and the yield is gt; the stability and the resolution ratio of the material are remarkably improved, and the material is suitable for sub-10nm semiconductor photoetching.

The invention discloses a light-controlled protein loading and releasing platform based on bent nanowires and a preparation method and application thereof. The preparation method comprises five steps of mask preparation, bent nanowire preparation, amination treatment, photo-acid modification and antibody attachment. The platform uses the bent nanowire as the substrate, has the characteristics of high specific surface area, nano confinement effect and high absorptivity, and can obviously improve the maximum capacity, so that the platform is easy to absorb both low-abundance protein and high-abundance protein. Furthermore, due to the fact that the target biomolecule is protein, by means of the principle that specific adsorption of the target biomolecule is sensitive to the pH value of the environment, a reversible photoacid molecule is used as a light-operated gate in the preparation method, the local pH value is adjusted to control specific adsorption and dissociation of the protein and the antibody, and the specific adsorption and dissociation of the protein and the antibody are controlled. And due to the high absorptivity of the bent nanowires, the bent nanowires can be dissociated in an extremely short time, and the local pH value is reduced, so that the protein is quickly released.

The present invention aims to provide a radiosensitive linear composition, a hardened film, a method for manufacturing the same, a semiconductor element, a display element, and a polymer that can produce a film with excellent adhesion. A radiosensitive linear composition comprises: a polymer containing a structural unit (I) having a base represented by formula (1), a photoacid generator, and an orthoester compound. In formula (1), R... 1 It can be a hydrogen atom, a halogen atom, a hydroxyl group, or an alkoxy group having 1 to 6 carbon atoms. R 2 and R 3 Each of the following can be independently a hydrogen atom, a halogen atom, a hydroxyl group, an alkoxy group with 1 to 6 carbon atoms, an alkyl group with 1 to 10 carbon atoms, or a phenyl group. "*" indicates a bond.

The invention provides a novel chemical amplification photoresist as well as a preparation method and a use method thereof. The novel chemical amplification photoresist comprises polymer resin containing a protecting group, a photoacid generator, an acid quenching agent and a solvent, wherein the photoacid generator comprises a first photoacid generator, and the first photoacid generator comprises at least one N-sulfonyloxy imide compound. According to the novel chemical amplification photoresist and the preparation method thereof, the N-sulfonyloxy imide compound is introduced as the first photoacid generator, so that the photoacid generation efficiency after exposure is obviously higher than that of a traditional photoacid generator, and when the novel chemical amplification photoresist is used for a substrate of which the surface is provided with a thin film layer which is slightly alkaline or rich in dangling bonds, the photoacid generation efficiency is obviously improved; the formation of residues or bottom feet at the bottom of a photoresist exposure area can be effectively inhibited, the influence on the resolution and morphology of a photoetching pattern is avoided, and the photoresist poisoning phenomenon can be prevented; and an additional surface treatment process does not need to be added, so that the substrate can be prevented from being damaged, and the process complexity and the process cost can be prevented from being increased.

The invention relates to a chemically amplified negative resist composition and a resist pattern forming method. The present invention provides a chemically amplified negative resist composition capable of obtaining a resist pattern having improved resolution during pattern formation and good LER and pattern loyalty, and a method for forming a resist pattern. A chemically amplified negative resist composition includes (A) a photoacid generator composed of an onium salt represented by the following formula (A), and (B) a base polymer including a polymer containing a repeating unit represented by the following formula (B1).

The invention provides a photoacid generator, a preparation method of the photoacid generator, a chemical amplification type photoresist and a preparation method of the chemical amplification type photoresist, and relates to the field of photoresist. The structural formula of the photoacid generator provided by the invention is shown in the specification, and the photoacid generator is sulfonium salt taking 5-tert-butyl-3-methyl-4-methylimidazo [1, 5-a] quinoline-3, 5-dicarboxylate as an acidic unstable group. The acidic unstable group is decomposed into an acid under high-energy radiation, the acidic unstable group is effectively decomposed into a carboxylic acid derivative and an imidazo [1, 5-a] quinoline derivative under the action of the acid and PDB (photolysis alkali), and the imidazo [1, 5-a] quinoline derivative can inhibit the diffusion rate of photoacid in the resist, so that the resistance of the resist is improved. Therefore, the dissolution rate of the photoresist in the developing solution after exposure is changed, and the problem of top loss after exposure and development of the photoresist is further solved.

The present application relates to an electroactive compound, a composition comprising the same, and a pattern forming method, and more particularly, to a composition comprising an acid-sensitive polymer comprising a first repeating unit derived from a monomer containing an acid-decomposable group; a photoacid generator compound; a non-polymeric electron acceptor compound, the non-polymeric electron acceptor compound having an electron affinity greater than that of the photoacid generator compound, where the non-polymeric electron acceptor compound does not generate a photoacid, and where the non-polymeric electron acceptor compound does not include a plurality of diazonaphthoquinone (DNQ) groups; and a solvent, where the solvent is present in the composition in an amount greater than 50% by weight, based on the total weight of the composition, where the composition is a positive EUV photoresist or an electron beam photoresist.

To provide an onium salt type monomer excellent in solvent solubility, having high sensitivity and high contrast, excellent in EL, LWR, CDU and DOF, strong against pattern collapse and excellent also in etching resistance.SOLUTION: An onium salt monomer having the formula (a): Wherein n1 is 0 to 1, n2 is 1 to 4, n3 is 0 to 2, and n4 is 0 to 4, RA is H, F, methyl or trifluoromethyl, RAL is an acid labile group, R1 is halogen, nitro, cyano or the like, LA and LB are single bonds, ester bonds or the like, XL is a single bond or hydrocarbylene, Q1 and Q2 are H, F or fluorinated saturated hydrocarbyl, Q3 and Q4 are F or fluorinated saturated hydrocarbyl, and Z + is an onium cation. ) SELECTED DRAWING: None

A photoresist composition comprising a polymer, a photoacid generator, an additive comprising a tertiary carbon atom as a ring-forming atom of a lactone ring, and a solvent.

A photoacid generator compound comprising an anion and an iodonium or sulfonium cation, wherein the anion is represented by Formula (1): (1) wherein, in Formula (1), ring Cy1 is a C3-15 monoalicyclic group or a C6-15 polyalicyclic group,; each L1 is independently a single bond or one or more linking groups, wherein L1 is free of fluorine; each X1 is independently -O-, -S-, -N(R2)-, -C(O)-, -S(O)R2-, or -S(O2)R2-, wherein R2 is independently chosen from substituted or unsubstituted C1-20 alkyl, substituted or unsubstituted C1-20 heteroalkyl, substituted or unsubstituted C6-30 aryl, or substituted or unsubstituted C3-30 heteroaryl; each Z1 independently comprises an anion stabilizing group, wherein at least one Z1 is configured to form an intramolecular non-covalent bond with the sulfonate anion group to form a ring having from 5 to 8 ring atoms, wherein the remaining substituents are as provided herein.