563 results about "Photoacid" patented technology

To provide an onium salt which is used for a chemically amplified resist composition having excellent solvent solubility, high sensitivity, high contrast, and excellent lithographic performances such as exposure latitude and linewidth roughness, in photolithography using high-energy radiation, a chemically amplified resist composition comprising the onium salt as a photoacid generator, and a pattern forming process using the chemically amplified resist composition.SOLUTION: An onium salt having the following formula (1) is provided. [R1-R12 independently represent H, halogen, or a C1-C20 hydrocarbyl group optionally including a heteroatom; one of R13 and R14 represents a substituent having a terminal sulfonic acid anion; the other represents H, halogen, or a C1-C20 hydrocarbyl group optionally including a heteroatom; and Z+ represents an onium cation.]SELECTED DRAWING: None

To provide a chemically amplified positive resist composition which can form a resist film capable of forming a pattern with extremely high resolution, small LER, excellent rectangularity, and a suppressed influence of residue defects on a developer, and to provide a resist pattern forming method using the chemically amplified positive resist composition.SOLUTION: The chemically amplified positive resist composition comprises (A) a base polymer, (B) a photoacid generator, and (C) a quencher. The base polymer (A) contains a polymer containing a predetermined phenolic hydroxy group-containing unit, a predetermined aromatic ring-containing unit, and a phenolic hydroxy group-containing unit protected by a predetermined acid-labile group. All repeating units contained in the base polymer (A) are repeating units having an aromatic ring. The number of halogen atoms contained in the repeating units constituting the base polymer (A) is 3 or less.SELECTED DRAWING: None

The invention discloses a preparation method and application of a micron-sized quantum dot light-emitting diode array device, and the method comprises the steps: sequentially forming a hole injection layer, a hole transmission layer, a patterned insulating layer, a quantum dot light-emitting layer, an electron transmission layer and a top electrode on an indium tin oxide substrate, and preparing the patterned insulating layer through photoresist; quantum dots are spin-coated to form a process route of an array light-emitting layer, electron leakage generated at pixel gaps is inhibited through photoresist, high resolution is achieved, and meanwhile the performance of a recorded Micro-QLED array device is achieved; a novel cross-linked hole transport layer PF8Cz-X is adopted to verify and solve the problem that a photoacid generator component in the photoresist generates strong oxidizing photoacid, and a triphenylamine structure hole transport layer in the QLED device is damaged by a reaction in a free radical coordination binding mode; and physical dissolution of a developing solution in a micro-nano processing technology is avoided by designing a thermal crosslinking group, and a photoetching system which is compatible with a solution processing technology and lossless to the Micro-QLED array device is constructed.

The invention relates to a chemically amplified positive resist composition and a resist pattern forming method. The present invention addresses the problem of providing: a chemically amplified positive resist composition capable of forming a resist film having extremely high resolution, low LER, excellent rectangularity, and suppressed influence of development load and development residue defects; and a method for forming a resist pattern using the chemically amplified positive resist composition. The solution of the present invention is a chemically amplified positive resist composition comprising: (A) a photoacid generator which is represented by formula (A) and which generates an acid due to the action of a high-energy ray; and (B) a base polymer that contains a polymer that has increased solubility in aqueous alkali due to the action of an acid and that contains a repeating unit represented by formula (B1). # imgabs0 #

The invention relates to an onium salt, a chemically amplified resist composition and a pattern forming method. The present invention addresses the problem of providing: an onium salt used in a chemically amplified resist composition which has excellent solvent solubility, high sensitivity, high contrast, and excellent lithography performance such as exposure margin and line width roughness in optical lithography using high-energy rays; a chemically amplified resist composition comprising the onium salt as a photoacid generator; and a pattern forming method using the chemically amplified resist composition. [Solution] An onium salt represented by formula (1). In the # imgabs0 # formula, one of R13 and R14 is a group having a partial structure represented by formula (1a); in the formula # imgabs 1 #, Q1 to Q3 are each independently a hydrogen atom, a fluorine atom, or a fluorinated saturated hydrocarbon group having 1 to 6 carbon atoms, but when Q1 and Q2 are both hydrogen atoms, Q3 is a fluorine atom or a fluorinated saturated hydrocarbon group having 1 to 6 carbon atoms. In addition, the total number of fluorine atoms in Q1-Q3 is 2 or more.

To provide a new photosensitive resin composition having superior adhesion to a Si wafer.SOLUTION: A photosensitive resin composition in one form of the present disclosure comprises a polyhydroxyurea compound having a structural unit represented by formula (1), a photoacid generator, and a crosslinking agent.SELECTED DRAWING: None

A photoresist composition including one or more non-solvent alkali-insoluble base materials present in a combined amount of greater than 50 wt%, based on total solids of the photoresist composition; a non-polymeric ionic photoacid generator compound including an anion and an iodonium or sulfonium cation, wherein the anion is represented by Formula (1) as defined herein; and a solvent, wherein the photoresist composition is free of a photoacid generator that generates a photoacid having a higher acidity than a photoacid generated by the non-polymeric ionic photoacid generator compound.

To provide a chemically amplified negative resist composition having improved resolution in pattern formation and giving a resist pattern with good LER and pattern fidelity, and to provide a method for forming a resist pattern.SOLUTION: (A) a photoacid generator comprising an anion having the formula (A1) and a cation having a specific structure, and (B) a base polymer comprising a recurring unit having a specific structure with a phenolic hydroxyl group on a side chain.SELECTED DRAWING: None

A method of manufacturing a semiconductor device includes forming a first layer including an organic material over a substrate. A second layer including a reaction product of a silicon-containing material and a photoacid generator is formed over the first layer. A photosensitive layer is formed over the second layer, and the second layer is patterned.

The embodiment of the invention provides a sulfonium salt compound, a photoacid generator and a resist composition, and relates to the field of photoresist. The sulfonium salt compound disclosed by the embodiment of the invention has a specific structural general formula, and the sulfonium salt compound with the structural general formula can be completely soluble and uniformly dispersed in an organic solvent, so that the uniformity of the composition can be ensured when the sulfonium salt compound is used as the resist composition; when the sulfonium salt compound provided by the embodiment of the invention is used as a photoacid generator for the resist composition, a large steric hindrance group of the sulfonium salt compound can effectively reduce MEEF and improve the LWR performance of a photoetching pattern; and ester groups in the sulfonium salt compound enable the sulfonium salt compound to be easily decomposed, so that the influence on the environment can be reduced to the greatest extent.

To provide a chemically amplified positive resist composition comprising an onium salt that can generate an acid with reduced diffusion, and a resist pattern forming process using the resist composition.SOLUTION: A chemically amplified positive resist composition comprising (A) a photoacid generator composed of an onium salt represented by the formula (A), and (B) a base polymer comprising a polymer containing a repeating unit of a specific structure, which is decomposed under the action of acid to increase its solubility in an alkaline developer (where, one of R13 and R14 is a group having a partial structure represented by the formula (a)).SELECTED DRAWING: None

The invention relates to the technical field of solid-liquid interfaces and liquid drop movement and control, in particular to a method and device for achieving left-right controllable spontaneous rotation of liquid drops based on light induction, and the method comprises the following steps that acid liquid drops containing photoacid are dropwise added to the surface of liquid metal; a light source system is adopted to irradiate liquid drops on one side of the liquid drops, the liquid drops are induced to locally release non-uniform H < + > ions, and interface chemistry is initiated to generate gradient change distribution; the light intensity generated by the light source system promotes the formation of asymmetric tension distribution on the liquid drop and liquid metal interface, and drives the liquid drop to rotate along a preset direction; and by changing the irradiation position, the liquid drops can be switched between left rotation and right rotation. According to the present invention, by using the mechanism of combining the interface Marangoni effect and the light-induced acidity regulation and control, the stable and rapid spinning behavior of the liquid drop can be represented by adjusting the position, the irradiation time and the irradiation intensity of the illumination region, and the rotation direction can be reversibly switched between the left rotation and the right rotation.

Crosslinking aromatic compounds are described which have structure (I). Also described, are compositions including these crosslinking compounds, for instance ones which also comprising a photoacid generator. Also, described are methods of using such compositions to coat a substrate and by exposing it to radiation producing an image which may be used as a mask in the manufacture of microelectronics. Also disclosed is a selective iodination method for multiphenolic compounds at the ortho position to the phenol functionality, employing a 1-iodopyrrolidine-2,5-dione moiety in the presence of an arylsulfonic acid which produces the phenolic precursors of crosslinking aromatic compounds with selective iodination.

Techniques disclosed herein relate to photo-patternable latent-chemistry inorganic materials. An example of the photo-patternable latent-chemistry inorganic materials includes a sol-gel material comprising a solution containing a tin dichloride salt, at least one alcohol containing solvent, and optionally a photo-acid generator or photo-acid. The sol-gel material, upon selective photo-excitation (which forms a latent pattern with latent chemistry in the sol-gel material) and blanket thermal annealing, can form a coating having a formula SnO(n)X(m), where the n:m ratio and / or n-m values of the coating vary across regions of the coating, such that a refractive index of the coating varies across regions of the coating, without affecting the coating's transparency for visible light.

The invention discloses a modeling method of an optical proximity correction model and an optical proximity correction method. The modeling method comprises the following steps: providing a plurality of bright field test patterns and a plurality of dark field test patterns; obtaining the number ratio of the bright field areas to the dark field areas in the actual layout; extracting a bright field test pattern and a dark field test pattern with the same proportion; and establishing an optical proximity correction model according to the extracted bright field test pattern and the corresponding bright field photoresist pattern as well as the feature size difference between the extracted dark field test pattern and the corresponding dark field photoresist pattern. The bright field test patterns and the dark field test patterns with the same proportion are sampled on the basis of the number proportion of the bright field areas and the dark field areas in the actual layout, and the photoacid diffusion length in the optical proximity correction model established on the theoretical basis has high pertinence, so that the accuracy of the photoacid diffusion length corresponding to the actual layout is effectively improved; the actual layout is optically corrected through the optical proximity correction model, and the optical proximity correction precision can be effectively improved.

The invention relates to a method for purifying an electronic-grade sulfonium salt photoacid generator. The method comprises the following steps: heating, preparing a photoacid generator stock solution, purifying through ion exchange resin, cooling, recrystallizing, carrying out solid-liquid separation, washing crystals and the like to obtain the high-purity photoacid generator, so that the metal content in the photoacid generator can be effectively reduced, the single metal content is less than 5ppb, and the yield is up to 80-90%. And mother liquor is collected and purified by resin and can be used for preparing photoacid stock solution again. The operation effectively reduces the use of an organic solvent and the generation of wastewater, can further improve the recrystallization yield, and meets the requirements of green and sustainable development.

The invention discloses a photoetching hot spot detection method and device based on dynamic subgraph feature fusion, and relates to the technical field of integrated circuits, and the method comprises the following steps: orthogonally cutting a polygon in a to-be-detected photoetching layout slice sample into rectangles, taking the central point of each rectangle as a node, and constructing to-be-detected graph structure data in combination with embedded features associated with each node; determining the radius of a sub-graph according to the photoacid diffusion length and the local graph density associated with the to-be-measured photoetching layout slice sample; and through the trained dynamic sub-graph aggregation graph kernel convolutional network model, according to the sub-graph radius, constructing a sub-graph of each node by using the to-be-detected graph structure data, extracting features based on each sub-graph to carry out hot spot detection, and outputting a photoetching hot spot detection result. Based on the scheme, the radiuses of the sub-graphs are dynamically divided by adopting photoetching process parameters to reduce empirical static hypothesis errors, visual decomposition and complex structures of the analysis graphs are carried out in a sub-graph feature extraction and fusion mode to enhance the interpretability of hot spot detection, and the reliability of hot spot detection is improved.

To provide an onium salt for use in a chemically amplified resist composition that exhibits high solvent solubility, high sensitivity, and high contrast in photolithography using high-energy radiation, while also offering superior lithography properties such as exposure latitude (EL) and line width roughness (LWR); a chemically amplified resist composition comprising the onium salt as a photoacid generator; and a pattern forming process using the chemically amplified resist composition.SOLUTION: The present invention provides an onium salt represented by formula (1).SELECTED DRAWING: None

In a method of patterning a substrate, a first relief pattern is formed based on a first layer deposited over the substrate. Openings in the first relief pattern are filled with a reverse material. The first relief pattern is then removed from the substrate and the reverse material remains on the substrate to define a second relief pattern. A fill material is deposited over the substrate, the fill material being in contact with the second relief pattern and being sensitive to photoacid generated by a photoacid generator in the second relief pattern. Selected portions of the second relief pattern are exposed to a first actinic radiation to generate photoacid in the selected portions of the second relief pattern. The photoacid is driven from the selected portions of the second relief pattern into portions of the fill material such that the portions of the fill material become soluble to a predetermined developer.

To provide a photoacid generator, a photoresist composition and a pattern forming method.SOLUTION: There is provided a photoacid generator containing a portion of the formula (1): wherein, Ar1 is a substituted or unsubstituted aryl group; R1 is an alkyl or an aryl group, each of which may be substituted or unsubstituted, here, Ar1 and R1 are optionally connected to each other by a single bond or a divalent linking group to form a ring; Y is a single bond or a divalent group; * is a bonding point of a portion of the photoacid generator to another atom. This photoacid generator compound finds specific application in photoresist compositions which can be used to form lithographic patterns for the formation of electronic devices.SELECTED DRAWING: None

[Task] To provide a cationically curable composition that cures in both the exposed area and the unexposed area in a mold with a complex geometry and is suitable for application as an optical element or adhesive. [Solution] Providing a cationically curable composition comprising a fluorene skeleton-containing epoxy compound (A) containing naphthalenediyl groups which may have a substituent, a mono- or bifunctional alicyclic epoxy compound (B), a photoacid generator (C) and an acid multiplying agent (D) and curing even in the unexposed area in a mold having a complex geometry.

Disclosed herein is a photosensitive composition comprising a) at least one photoacid generator; b) at least one Novolak polymer; c) at least one acrylate polymer, comprising a component having structure (I); d) at least one glycidyl hydroxy benzoic acid condensate material comprising one or more compounds having structure (II); e) at least one heterocyclic thiol compound comprising a ring structure chosen from the general structures (III), (IIIa) or (IIIb); and f) at least one solvent. Disclose herein are also the methods of using this composition to form a resist pattern and the methods of using these resist patterns to produce metal lines. Disclosed herein are also compounds and mixtures of compounds having structure (II).

The invention provides a purification method of a naphthalimide high-purity electronic-grade photoacid generator. The method solves the problem that photo-acid cannot be purified by traditional recrystallization or directly through ion exchange columns and other methods. The method comprises the following steps: firstly synthesizing and preparing 1, 3-diketone-2-hydroxy-6-(1-hexyne) benzisoquinoline, then reacting with triethylamine and trifluoromethylsulfonyl chloride to generate a crude product 1, 3-diketone-2-(1, 1, 1-trifluoromethyl) methanesulfonic ester-6-(1-hexyne) benzisoquinoline, removing impurities from normal hexane to obtain a pure product, sublimating the material into a gas phase by using a quartz vacuum sublimation instrument, and purifying to obtain the 1, 3-diketone-2-(1, 1, 1-trifluoromethyl) methanesulfonic ester-6-(1-hexyne) benzisoquinoline. And then passing through Pure MTS9500 amino phosphonic acid type chelating resin, and finally cooling in a quartz tube to obtain the high-purity electronic-grade photoacid generator. According to the invention, the stability is high, the metal ion content is low, the purification process is convenient to process, the product is used as a photoresist-level core main material, the product is widely applied in the fields of semiconductor photoresist, other imaging systems, photocureable coatings and the like, the market scale is continuously expanded, and the product is an indispensable key material in semiconductor manufacturing and other related fields.

The invention relates to a chemically amplified negative resist composition and a resist pattern forming method. The present invention addresses the problem of providing: a chemically amplified negative resist composition which is capable of improving resolution during pattern formation and which is capable of obtaining a resist pattern having excellent LER and pattern loyalty; and a method for forming a resist pattern. A chemically amplified negative resist composition containing (A) a photoacid generator comprising an onium salt represented by the following formula (A), and (B) a base polymer comprising a polymer containing a repeating unit represented by the following formula (B1). In the # imgabs0 # formula, one of R13 and R14 is a group having a partial structure represented by formula (a). # imgabs1 #

A resist composition comprising an acid compound, a photoacid generator of iodonium salt type and / or a photo-decomposable quencher of iodonium salt type, and a base polymer has a high sensitivity, reduced edge roughness or size variation, improved resolution and satisfactory storage stability.

A photoresist composition comprising one or more non-solvent alkali-insoluble substrates present in a total amount exceeding 50% by weight based on the total solids content of the photoresist composition, and a nonpolymeric ionic photoacid generator compound comprising an anion and an iodonium or sulfonium cation, wherein the anion is defined by formula (1) as defined herein. [Formula 1] TIFF2026528972000047.tif49166(wherein b is an integer from 1 to 4, and at least one R) 1 (This is a group that is substituted with a halogen.) A photoresist composition comprising a nonpolymeric ionic photoacid generator compound and a solvent, as represented by [formula].

Provided are a resist top coating composition and a method of forming a pattern using the same. The resist top coating composition includes a copolymer including a first structural unit represented by Chemical Formula M-1 and a second structural unit represented by Chemical Formula M-2; a photoacid generator; and a solvent, in which the photoacid generator is a nonionic compound including an organic sulfonate group or an ionic compound including, as an anion, at least one selected from the group consisting of a conjugated base of an inorganic acid and a conjugated base of an organic sulfonic acid.

Provided is a novel negative photosensitive resin composition having excellent resolution without using a resin component that can be subject to PFAS limitation. Provided is a negative photosensitive resin composition containing a polyhydroxy amide compound containing a structural unit represented by formula (1), a crosslinking agent, and a photoacid generator.

To provide an onium salt used for a chemically amplified resist composition excellent in solvent solubility, having high sensitivity and high contrast and excellent in lithography performance such as LWR, CDU, MEF, EL and DOF in photolithography using high energy rays, a chemically amplified resist composition containing the onium salt as a photoacid generator, and a pattern forming method using the chemically amplified resist composition.SOLUTION: An onium salt having the formula (1): SELECTED DRAWING: None

A photoresist composition comprising one or more alkali-insoluble, non-solvent base materials present in a combined amount of more than 50 wt% based on the total solids of the photoresist composition; a non-polymeric ionic photoacid generator compound comprising an anion and an iodonium or sulfonium cation, the anion being represented by formula (1); a photodegradable quencher, a basic quencher or a combination thereof and a solvent: where Ar 1 for a monocyclic or polycyclic aromatic C 3-60 -Group stands; L 1 L represents a single bond or one or more binary linkage groups. 1 is free of fluorine; Z 1 an anion-stabilizing group, wherein Z 1is designed in such a way that it forms an intramolecular non-covalent bond with the sulfonate anion group, forming a ring with 5 to 8 atoms; and the remaining substituents are defined as shown here.