502results about "Diazo compound compositions" patented technology

An automated in situ heat induced antigen recovery and staining method and apparatus for treating a plurality of microscope slides. The process of heat induced antigen recovery and the process of staining the biological sample on the microscope slide are conducted in the same apparatus, wherein the microscope slides do not need to by physically removed from one apparatus to another. Each treatment step occurs within the same reaction compartment. The reaction conditions of each reaction compartment for treating a slide can preferably be controlled independently, including the individualized application of reagents to each slide and the individualized treatment of each slide. The reagents are preferably held in a reagent dispensing strip similar to a “blister pack”.

The invention is a curable cyclobutarene based polymer comprising acid functional pendant groups. The cured polymer displays excellent qualities of toughness, adhesion, dielectric constant, and low stress. The preferred system is soluble in an aqueous base and can be used to generate patterned films with excellent resolution without the need to handle organic developer solvents.

A method of forming a minute resist pattern wherein a positive-working photoresist composition containing 3 to 15 parts by weight of a quinone diazide group-containing photosensitizer relative to 100 parts by weight of alkali-soluble novolak resin is developed by an aqueous organic or inorganic alkali solution having a lower alkali concentration than that of the conventional one as the developer. The preferable example of the organic alkali materials in the developer is quaternary ammonium hydroxide, and the preferable example of the inorganic alkali materials in the developer is alkali metal hydroxide. The concentrations of the quaternary ammonium hydroxide and the alkali metal hydroxide in the developing solution are 2.2% by weight or less and 0.4% by weight or less respectively. Using such developing solution, high sensitivity, a high film retention rate, high resolution, low process dependency of dimension accuracy, and a formation of excellent pattern profile can be achieved.

A chemically amplified positive resist composition comprising at least one basic compound of the following general formula (1) or (2):wherein R1, R2, R3, R7, and R8 are independently normal, branched or cyclic alkylene groups having 1 to 20 carbon atoms, R4, R5, R6, R9, and R10 are independently hydrogen, alkyl groups having 1 to 20 carbon atoms or amino groups, R4 and R5, R5 and R6, R4 and R6, or R8, R5 and R5, and R9 and R10, taken together, may form a ring, letters k, m and n are integers of 0 to 20, with the proviso that hydrogen is excluded from R4, R5, R6, R9 and R10 when k, m or n is equal to 0.The resist compositions of the present invention are effective for preventing resist films from thinning and for increasing the focus margin of an isolated pattern.

A negative type radiation sensitive resin composition comprising: (A) an alkali-soluble resin containing the polymerized unit of a polymerizable unsaturated compound having a phenolic hydroxyl group and having a weight average molecular weight of 4,100 to 20,000 and a weight average molecular weight/number average molecular weight ratio of more than 1.25 to not more than 2.00; (B) a radiation sensitive acid generating agent; and (C) an acid crosslinking agent. This composition can be used with an alkali developer having a normal concentration, can form a high-resolution rectangular line-and-space resist pattern, and provides a chemically amplified negative type resist which is free from a resist pattern defect (bridging or chip line) after development and has excellent sensitivity, developability and dimensional fidelity.

A heat resistant negative working photosensitive composition that comprises

• • (a) one or more polybenzoxazole precursor polymers (I):
  • wherein x is an integer from about 10 to about 1000, y is an integer from 0 to about 900 and (x+y) is about less then 1000; Ar¹ is selected from the group consisting of a tetravalent aromatic group, a tetravalent heterocyclic group, or mixtures thereof; Ar² is selected from the group consisting a divalent aromatic, a divalent heterocyclic, a divalent alicyclic, a divalent aliphatic group that may contain silicon, or mixtures thereof; Ar³ is selected from the group consisting a divalent aromatic group, a divalent aliphatic group, a divalent heterocyclic group, or mixtures thereof; Ar⁴ is selected from the group consisting Ar¹ (OH)₂ or Ar²; G is an organic group selected from the group consisting groups having a carbonyl, carbonyloxy or sulfonyl group attached directly to the terminal NH group of the polymer;
  • (b) one or more photo-active compounds which release acid upon irradiation (PAGs);
  • (c) a latent crosslinker which contains at least two ˜N—(CH₂OR)_n units wherein n=1 or 2 and R is a linear or branched C₁-C₈ alkyl group, with the proviso that when a glycoluril is employed as the latent crosslinker, the G group in the polybenzoxazole precursor polymer is produced from the reaction of a cyclic anhydride; and
  • (d) at least one solvent that is not NMP.

A resist composition comprising (A) an organic solvent; (B) at least two polymers with weight average molecular weights of 1,000-500,000, which have at least one type of acid labile group and are crosslinked within a molecule and/or between molecules with crosslinking groups having C-O-C linkages; and (C) a photoacid generator is sensitive to high-energy radiation, has excellent sensitivity, resolution, and plasma etching resistance, and provides resist patterns of outstanding thermal stability and reproducibility. Patterns obtained with this resist composition are less prone to overhanging and have excellent dimensional controllability. The resist composition is suitable as a micropatterning material for VLSI fabrication because it has a low absorption at the exposure wavelength of a KrF excimer laser, thus enabling the easy formation of a finely defined pattern having sidewalls perpendicular to the substrate.

According to the present invention there is provided a heat mode imaging element for making a lithographic printing plate having on a lithographic base with a hydrophilic surface a first layer including a polymer, soluble in an aqueous alkaline solution and a top layer on the same side of the lithographic base as the first layer which top layer is unpenetrable for or insoluble in an alkaline developer containing SiO2 in the form of silicates; characterized in that said first layer and said top layer comprise a compound capable of converting IR-light into heat.

A positive photosensitive polyimide resin composition comprising:

• • (a) a solvent-soluble polyimide comprised of from 1 to 100 mol % of a bivalent organic group derived from a diamine, that has at least one solvent solubilizing functional group, the polyimide having a reduced viscosity ranging from 0.05 to 5.0 dl/g,
  • (b) a photosensitive orthoquinonediazide compound, and
  • (c) from 0.1 to 50 wt %, based on the total weight of all polymers of the composition, of a component (c1) or (c2), wherein:
  • component (c1) is a solvent-soluble polyimide comprised of from 1 to 100 mol % of a bivalent organic group derived from a diamine, that has at least one functional group selected from the group consisting of a long chain alkyl group having at least 6 carbon atoms and a fluorinated alkyl group, the polyimide having a reduced viscosity ranging from 0.05 to 5.0 dl/g, and
  • component (c2) is a polyamic acid comprised of from 1 to 100 mol % of a bivalent organic group derived from a diamine, that has at least one functional group selected from the group consisting of a long chain alkyl group having at least 6 carbon atoms and a fluorinated alkyl group, the polyimide having a reduced viscosity ranging from 0.05 to 5.0 dl/g.

A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin, (C) a photoacid generator, and optionally, (D) a dissolution rate regulator. The base resin (B) is a hydroxystyrene copolymer having different acid labile groups and Mw of 3,000-300,000. The resist composition is highly sensitive to actinic radiation such as deep-UV, electron beam and X-ray, can be developed with aqueous base to form a pattern, and is thus suitable for use in a fine patterning technique.

A positive type photosensitive resin composition which comprises (A) 100 parts by weight of a polyamide represented by the general formula (1): wherein X represents a tetravalent aromatic group; Y represents a divalent aromatic group; Z represents a group represented by the formula: in which R1 and R2 represent organic groups and R3 and R4 represent monovalent organic groups; a and b represent molar fractions; a+b=100 mole %; a=60.0-100.0 mole %; b=0-40.0 mole %; and n represents an integer of 2 to 500, (B) 1 to 100 parts by weight of a photosensitive diazoquinone compound and (C) 1 to 50 parts by weight of a phenol compound represented by a specific structural formula and/or (D) 0.1 to 20 parts by weight of an organosilicon compound represented by a specific structural formula; and a semiconductor device in which a pattern of a polybenzoxazole resin obtained by using the above photosensitive resin composition is formed in a thickness of 0.1 to 20 mu m on a semiconductor element.

A flash lamp exposure system for exposing a substrate to ultraviolet radiation. The system includes at least one flash lamp, each of which includes: at least one lamp for emitting ultraviolet radiation in response to a voltage; at least one first reflector, each first reflector being adapted to reflect the ultraviolet radiation toward the substrate; a second reflector surrounding a path of the ultraviolet radiation from the at least one lamp to the substrate, the second reflector being adapted to reflect first rays of the ultraviolet radiation toward the substrate; and a third reflector disposed closer to the substrate than the secondary reflector and surrounding the path of the ultraviolet radiation from the at least one lamp to the substrate, the third reflector being adapted to reflect second rays of the ultraviolet radiation toward the substrate.

The invention provides a process for producing at least one optical filter layer segment on a substrate. The process includes

• • applying a masking comprising a resist layer on a surface of the substrate,
  • depositing an optical filter layer on the surface and the resist layer by vacuum deposition, and
  • removing the resist layer with a portion of the optical filter layer thereon from the surface.

The deposition of the optical filter layer, at least at times, takes place at a temperature of over 150° C., preferably in a range from over 150° C. up to and including 400° C.

A positive photosensitive resin precursor composition which can be can be developed in an alkaline developer is provided. The positive photosensitive resin precursor composition comprises (a), one of (b1) and (b2), and (c): (a) a polyamic acid ester and/or a polyamic acid polymer, both of which are soluble in an alkaline aqueous solution; (b1) a phenolic-hydroxyl-group-containing thermally crosslinkable compound comprising an organic-group-R<superscript>1>-substituted methylol group represented by formula (1) (wherein R<superscript>1 >is not a hydrogen atom),CH<subscript>2</highlight>-OR<superscript>1>) (1);(b2) a thermally crosslinkable compound containing a ureal organic group substituted by an organic group R<superscript>1 >and represented by formula (2) (c) an esterified quinone diazide compound.

A photopolymerizable composition that is cured with visible light or an infrared laser and is used as a recording layer in a negative planographic printing plate precursor. The photopolymerizable composition is cured by exposure and includes (A) a polymerizable compound that is solid at 25° C. and has at least one radical-polymerizable ethylenically unsaturated double bond in a molecule, (B) a radical polymerization initiator, (C) a binder polymer and, as required, (D) a compound generating heat by infrared exposure.

A lithographic printing plate precursor is disclosed, comprising a support having provided thereon a photosensitive layer containing at least (A) an infrared ray absorbing agent, (B) an onium salt, (C) a radically polymerizable compound, (D) a binder polymer and (E) an organic dye or the precursor thereof capable of undergoing change in color tone upon exposure.

Novel positive-working photoresist compositions are disclosed. The monomers of the base resin of the resist contain diamondoid-containing pendant groups higher than adamantane in the polymantane series; for example, diamantane, triamantane, tetramantane, pentamantane, hexamantane, etc. The diamondoid-containing pendant group may have hydrophilic-enhancing substituents such as a hydroxyl group, and may contain a lactone group. Advantages of the present compositions include enhanced resolution, sensitivity, and adhesion to the substrate.

Disclosed is a positive-type photosensitive resin composition comprising: (a) an alkali-soluble resin; (b) a quinone diazide compound; (c) a heatsensitive compound which colors upon being heated and which shows an absorption maximum at a wavelength of not less than 350 nm and not more than 700 nm; and (d) a compound which does not have an absorption maximum at a wavelength of not less than 350 nm to less than 500 nm, and has an absorption maximum at a wavelength of not less than 500 nm and not more than 750 nm. The composition is preferably used for forming light-blocking separators or black matrices of organic electroluminescent devices and liquid crystal display elements.

A resist material is made of a polymer or copolymer having a cyclic hydrocarbon as a skeletal structure and an alkali-soluble group to which a protective group is attached as a side chain. Because of the protective group, the resist material is insoluble in alkali solution. In addition, an acid generating agent is added to the resist material. When the acid generating agent is irradiated with a radiation ray, an acid is generated from the acid generating agent, and the protective group is detached from the alkali-soluble group by the function of the acid. Therefore, a resist film made of the resist material can be formed in a desired pattern by irradiating the resist film with the radiation ray. Also, because the cyclic hydrocarbon is used as the skeletal structure of the polymer or copolymer, a superior dry-etching resistance is obtained as compared with a conventional resist material in which acrylate resin is used as a skeletal structure, so that there is no probability that a patterned resist film is over-etched or deformed even though the patterned resist film is used as a mask in an etching process.