The invention provides a method for forming a film pattern, in which a method for forming a film pattern by the ink-jet method is improved, an increase in film thickness is achieved efficiently with simple steps, a requirement for a decrease in
line width is met and, in addition, problems such as breaks and short circuits are not brought about when a conductive film is made. The method can include a first discharging step, wherein droplets are discharged in the whole film formation region with a
pitch larger than the
diameter of the droplet after being hit onto the substrate. In the second discharging step, droplets are discharged at positions in the whole film formation region different from the
discharge positions in the first discharging step with the same
pitch as that in the first discharging step. In the third discharging step, droplets are discharged in the whole film formation region with a
pitch smaller than the pitch in the first discharging step. The substrate is treated beforehand in order to have the
contact angle of 60 degrees or more with respect to the droplets.