15220results about How to "Prevent oxidation" patented technology

A method for forming an oxide film by plasma-assisted cyclic processing, includes: (i) supplying a precursor to a reaction space wherein a substrate is placed; (ii) applying a first RF power to the reaction space for a first period of time without supplying a precursor; and (iii) applying a second RF power to the reaction space for a second period of time without supplying the precursor, wherein the first RF power is lower than the second RF power, and / or the first period of time is shorter than the second period of time.

A method for forming an oxide film by plasma-assisted processing includes: (i) supplying a precursor reactive to none of oxygen, CxOy, and NxOy (x and y are integers) without a plasma to a reaction space wherein a substrate is placed; (ii) exposing the precursor to a plasma of CxOy and / or NxOy in the reaction space; and (iii) forming an oxide film on the substrate using the precursor and the plasma.

Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane / borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.

A substrate processing apparatus stably and efficiently conducts a film forming process on a substrate to be processed. In the substrate processing apparatus, the substrate to be processed is supported at a position facing a heater portion, and a holding member for holding the substrate is rotated, whereby the temperature distribution of the substrate is kept uniform and a warp of the substrate is suppressed. The inner wall of the processing vessel is covered with a quartz liner which is made of opaque quartz, and thus protected from ultraviolet rays emitted from an ultraviolet light source. The temperature rise of the inner wall caused by heat from the heater portion is suppressed due to the heat insulating effect of the quartz liner. Consequently, the life cycle of the processing vessel can be prolonged.

A method of post-deposition treatment for silicon oxide film includes: providing in a reaction space a substrate having a recess pattern on which a silicon oxide film is deposited; supplying a reforming gas for reforming the silicon oxide film to the reaction space in the absence of a film-forming precursor, said reforming gas being composed primarily of He and / or H2; and irradiating the reforming gas with microwaves in the reaction space having a pressure of 200 Pa or less to generate a direct microwave plasma to which the substrate is exposed, thereby reforming the silicon oxide film.

Medical devices, and in particular implantable medical devices, may be coated to minimize or substantially eliminate a biological organism's reaction to the introduction of the medical device to the organism. The medical devices may be coated with any number of biocompatible materials. Therapeutic drugs, agents or compounds may be mixed with the biocompatible materials and affixed to at least a portion of the medical device. These therapeutic drugs, agents or compounds may also further reduce a biological organism's reaction to the introduction of the medical device to the organism. In addition, these therapeutic drugs, agents and / or compounds may be utilized to promote healing, including the formation of blood clots. The drugs, agents, and / or compounds may also be utilized to treat specific diseases, including vulnerable plaque. Therapeutic agents may also be delivered to the region of a disease site. In regional delivery, liquid formulations may be desirable to increase the efficacy and deliverability of the particular drug. Also, the devices may be modified to promote endothelialization. Various materials and coating methodologies may be utilized to maintain the drugs, agents or compounds on the medical device until delivered and positioned. In addition, the devices utilized to deliver the implantable medical devices may be modified to reduce the potential for damaging the implantable medical device during deployment. Medical devices include stents, grafts, anastomotic devices, perivascular wraps, sutures and staples. In addition, various polymer combinations as well as other therapeutic agents may be utilized to control the elution rates of the therapeutic drugs, agents and / or compounds from the implantable medical devices. In each of these instances, antioxidants are utilized to prolong product integrity.

A field effect gas sensor, for detecting a presence of a gaseous substance in a gas mixture, the field effect gas sensor comprising: a SiC semiconductor structure; an electron insulating layer covering a first portion of the SiC semiconductor structure; a first contact structure at least partly separated from the SiC semiconductor structure by the electron insulating layer; and a second contact structure conductively connected to a second portion of the SiC semiconductor structure, wherein at least one of the electron insulating layer and the first contact structure is configured to interact with the gaseous substance to change an electrical property of the SiC semiconductor structure; and wherein the second contact structure comprises: an ohmic contact layer in direct contact with the second portion of the SiC semiconductor structure; and a barrier layer formed by an electrically conducting mid-transition-metal oxide covering the ohmic contact layer.

The present invention relates to the Schizochytrium genus SR21 strain and a microorganism belonging to the same species as does said SR21 strain or having substantially the same fungological properties as does said SR21 strain, the said SR21 strain and microorganism having the ability to produce the (n-3) series of docosahexaenoic acid (DHA) and the (n-6) series of docosapentaenoic acid (DPA), and the invention also relates to a process for preparing the (n-3) series of DHA and the (n-6) series of DPA utilizing said microorganisms. The microorganisms according to the present invention are superior in their proliferation character and their propensity to produce fat, and have the ability to produce the (n-3) series of DHA and the (n-6) series of DPA very well. Accordingly, it is possible to effectively produce the (n-3) series of DHA and / or the (n-6) series of DPA, which are useful in the fields of foods and pharmaceuticals, using the microorganisms according to the present invention. In addition, the present invention provides a fat obtained by culturing the present microorganisms. Since the fat composition contains the (n-6) series of DPA in addition to the (n-3) series of DHA having various physiological activities, it is possible to stably and effectively supply the (n-6) series of DPA and / or the (n-3) series of DHA to subjects in need of these highly unsaturated fatty acids by adding the fat composition to various feedstuffs or foods.

MgO tunnel barriers are formed by depositing a thin layer of Mg on a suitable underlayer, and then directing oxygen and additional Mg towards the Mg layer. The oxygen reacts with the additional Mg and the Mg in the Mg layer to form a MgO tunnel barrier that enjoys excellent tunneling characteristics. The MgO tunnel barriers so formed may be used in magnetic tunnel junctions having tunneling magnetoresistance (TMR) values of greater than 100%. The highest TMR values are observed for junctions that have been annealed and that have a (100) crystallographic orientation.

An electronic device including a magnetic body and a wire is provided. The magnetic body has a first magnetic powder and a second magnetic powder mixed with the first magnetic powder. The Vicker's Hardness of the first magnetic powder is greater than that of the second magnetic powder and the mean particle diameter of the first magnetic powder is greater than that of the second magnetic powder.

ZnMg oxide tunnel barriers are grown which, when sandwiched between ferri- or ferromagnetic layers, form magnetic tunnel junctions exhibiting high tunneling magnetoresistance (TMR). The TMR may be increased by annealing the magnetic tunnel junctions. The zinc-magnesium oxide tunnel barriers may be incorporated into a variety of other devices, such as magnetic tunneling transistors and spin injector devices. The ZnMg oxide tunnel barriers are grown by first depositing a zinc and / or magnesium layer onto an underlying substrate in oxygen-poor (or oxygen-free) conditions, and subsequently depositing zinc and / or magnesium onto this layer in the presence of reactive oxygen.

A wire-bonding method for chips with copper interconnects by introducing a thin layer is provided for solving the problem of oxidizing a copper bonding-pad during bonding processing in order not to deteriorate the bonding strength and yield rate thereof. The wire-bonding method of the present invention comprises: a step for providing a chip with a copper bonding-pad; another step for providing an aqueous solution to form a Cuprous oxide thin layer on the copper bonding-pad; and yet another step for setting a plurality of copper interconnects on the copper bonding-pad and providing an ultrasonic power for removing the Cuprous oxide layer to have the interconnects bonded on the copper bonding-pad.