79080 results about "Oxygen" patented technology

A medical instrument sterilization method is disclosed, which characterizes in following process: pending medical instrument for sterilization treatment being placed in a closed container, then being vacuum pumped, the vacuum pressure of the container being controlled between 1 Pa to 1500 Pa, air and/or oxygen and/or inert gases are charged to closed container and the vacuum pressure being between 1 Pa to 1500 Pa, microwave is fed, the favorable power of which should make the gas charged into the container to generate ionization, the microwave be cut after the sterilization, then air being charged to release vacuum to finish the whole process.

Microneedle devices are provided for controlled sampling of biological fluids in a minimally-invasive, painless, and convenient manner. The microneedle devices permit in vivo sensing or withdrawal of biological fluids from the body, particularly from or through the skin or other tissue barriers, with minimal or no damage, pain, or irritation to the tissue. The microneedle device includes one or more microneedles, preferably in a three-dimensional array, a substrate to which the microneedles are connected, and at least one collection chamber and/or sensor in communication with the microneedles. Preferred embodiments further include a means for inducing biological fluid to be drawn through the microneedles and into the collection chamber for analysis. In a preferred embodiment, this induction is accomplished by use of a pressure gradient, which can be created for example by selectively increasing the interior volume of the collection chamber, which includes an elastic or movable portion engaged to a rigid base. Preferred biological fluids for withdrawal and/or sensing include blood, lymph, interstitial fluid, and intracellular fluid. Examples of analytes in the biological fluid to be measured include glucose, cholesterol, bilirubin, creatine, metabolic enzymes, hemoglobin, heparin, clotting factors, uric acid, carcinoembryonic antigen or other tumor antigens, reproductive hormones, oxygen, pH, alcohol, tobacco metabolites, and illegal drugs.

A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen, fluorine, chlorine, and bromine content.

Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O₂, and/or a halogen-containing gas, such as NF₃. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.

The present invention relates generally to systems and methods for increasing oxygen generation in electrochemical sensors in order to overcome the oxygen limitations. The preferred embodiments employ electrode systems with at least two electrodes in relatively close proximity to each other; wherein at least one electrode is configured to generate oxygen and at least one other electrode is configured to sense an analyte or a product of a reaction indicative of the concentration of analyte. The oxygen generated by the oxygen-generating electrode is available to the catalyst within a membrane system and/or the counter electrode, thereby enabling the electrochemical sensors of the preferred embodiments to function even during ischemic conditions.

An ultraviolet (UV) cure chamber enables curing a dielectric material disposed on a substrate and in situ cleaning thereof. A tandem process chamber provides two separate and adjacent process regions defined by a body covered with a lid having windows aligned respectively above each process region. One or more UV bulbs per process region that are covered by housings coupled to the lid emit UV light directed through the windows onto substrates located within the process regions. The UV bulbs can be an array of light emitting diodes or bulbs utilizing a source such as microwave or radio frequency. The UV light can be pulsed during a cure process. Using oxygen radical/ozone generated remotely and/or in-situ accomplishes cleaning of the chamber. Use of lamp arrays, relative motion of the substrate and lamp head, and real-time modification of lamp reflector shape and/or position can enhance uniformity of substrate illumination.

A method of manufacturing a high performance MOS device and transistor gate stacks comprises forming a gate dielectric layer over a semiconductor substrate; forming a barrier layer over the gate dielectric layer by an ALD type process; and forming a gate electrode layer over the barrier layer. The method enables the use of hydrogen plasma, high energy hydrogen radicals and ions, other reactive radicals, reactive oxygen and oxygen containing precursors in the processing steps subsequent to the deposition of the gate dielectric layer of the device. The ALD process for forming the barrier layer is performed essentially in the absence of plasma and reactive hydrogen radials and ions. This invention makes it possible to use oxygen as a precursor in the deposition of the metal gates. The barrier film also allows the use of hydrogen plasma in the form of either direct or remote plasma in the deposition of the gate electrode. Furthermore, the barrier film prevents the electrode material from reacting with the gate dielectric material. The barrier layer is ultra thin and, at the same time, it forms a uniform cover over the entire surface of the gate dielectric.

A plasma processing chamber particularly useful for pre-treating low-k dielectric films and refractory metal films subject to oxidation prior to deposition of other layers. A remote plasma source (RPS) excites a processing gas into a plasma and delivers it through a supply tube to a manifold in back of a showerhead faceplate. The chamber is configured for oxidizing and reducing plasmas in the same or different processes when oxygen and hydrogen are selectively supplied to the RPS. The supply tube and showerhead may be formed of dielectric oxides which may be passivated by a water vapor plasma from the remote plasma source. In one novel process, a protective hydroxide coating is formed on refractory metals by alternating neutral plasmas of hydrogen and oxygen.

A thin-film transistor including an oxide semiconductor layer is disclosed. The oxide semiconductor layer includes a first area, a second area and a third area forming a well-type potential in the film-thickness direction. The first area forms a well of the well-type potential and has a first electron affinity. The second area is disposed nearer to the gate electrode than the first area and has a second electron affinity smaller than the first electron affinity. The third area is disposed farther from the gate electrode than the first area and has a third electron affinity smaller than the first electron affinity. At least an oxygen concentration at the third area is lower than an oxygen concentration at the first area.

This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

Implantable medical devices with biocompatible coatings and processes for their production are described. The present invention relates in particular to medical implantable devices coated with a carbon-containing layer which devices are produced by at least partially coating the device with a polymer film and heating the polymer film in an atmosphere which is essentially free from oxygen to temperatures in the region of 200° C. to 2500° C., a carbon-containing layer being produced on the implantable medical device.