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478results about How to "Improve mobility" patented technology

METHOD OF MANUFACTURING ZnO SEMICONDUCTOR LAYER FOR ELECTRONIC DEVICE AND THIN FILM TRANSISTOR INCLUDING THE ZnO SEMICONDUCTOR LAYER

Provided are a method of manufacturing a ZnO semiconductor layer for an electronic device, which can control the size of crystals of the ZnO semiconductor layer and the number of carriers using a surface chemical reaction between precursors, and a thin film transistor (TFT) including the ZnO semiconductor layer. The method includes: (a) loading a substrate into a chamber; (b) injecting a Zn precursor into the chamber to adsorb the Zn precursor on the substrate; (c) injecting an inert gas or N2 gas into the chamber to remove the remaining Zn precursor; (d) injecting an oxygen precursor into the chamber to cause a reaction between the oxygen precursor and the Zn precursor adsorbed on the substrate to form the ZnO semiconductor layer; (e) injecting the N2 gas or inert gas into the chamber to remove the remaining oxygen precursor; (f) repeating steps (a) through (e); (g) repeatedly processing the surface treatment of the ZnO semiconductor layer using O2 plasma or O3; (h) injecting the N2 gas or inert gas into the chamber to remove the remaining oxygen and Zn precursors; and (i) repeating steps (a) through (h) to control the thickness of the ZnO semiconductor layer. In this method, a transparent TFT is formed using a transparent substrate to enable manufacture of a transparent display device, and a flexible display device can be manufactured using a flexible substrate. Also, the crystallinity of the ZnO semiconductor layer can be increased to improve the mobility of a TFT, and the number of carriers can be controlled to reduce a leakage current. Therefore, a ZnO semiconductor having excellent characteristics can be manufactured.
Owner:ELECTRONICS & TELECOMM RES INST

Polarization doping-based GaN Schottky diode

The invention discloses a polarization doping-based GaN Schottky diode, and belongs to the field of semiconductor devices. The diode comprises a semi-insulated substrate layer used for supporting the overall GaN Schottky diode, a highly doped N+ type GaN layer grown on the substrate layer, and an N- type AlxGa1-xN (x is greater than 0 and less than or equal to 1) layer which is grown in the N+ type GaN layer by adopting polarization doping; and the component Al of the N- type Al[x]Ga[1-x]N (x is greater than 0 and less than equal to 1) layer is distributed non-uniformly from the interface of the N+ type GaN layer. An ohmic contact electrode and a Schottky contact electrode are also arranged on the diode. According to the polarization doping-based GaN Schottky diode, the N- type AlxGa1-xN (x is greater than 0 and less than or equal to 1) layer is grown on the N+ type GaN layer in a polarization doping mode, so that the mobility of a GaN material is improved, the serial resistance of the Schottky diode is reduced, and the working frequency of the Schottky diode is improved; therefore, the working frequency and the output power of a frequency multiplier circuit in the range of millimeter wave and terahertz are improved. In the polarization doping mode, the capacitance variation ratio of the Schottky diode can be controlled effectively and the Q value of a device can be improved.
Owner:THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP

Flat coreless vibrator motor using magnetic latching power

InactiveUS6246143B1Improve mobilityRotary current collectorElectrostatic generators/motorsMagnetic fluxMagnetic tension force
A flat coreless vibrator motor holds a rotor in a specific position by magnetic flux from a magnet, increasing vibration by increasing the eccentricity of the center of gravity of the rotor, easily moving since the adjacent segments of a commutator are not short-circuited, and having reduced manufacturing costs. In the flat coreless vibrator motor, a four-pole magnet which has alternate north and south poles for providing a magnetic field to an eccentric rotor faces the eccentric rotor, in one side of which at least one coreless coil is located and in which a commutator having four segments, each diametrically-opposite pair of which are short-circuited, is installed. The flat coreless vibrator motor includes a unit for holding the at least one coreless coil of the eccentric rotor so that available conductor portions are at a specific position when the eccentric rotor stops, using the magnetic power of the magnet, a pair of brushes for supplying power to the eccentric rotor through the commutator in a position where the angle formed by the commutator and the brushes is 90.degree., and a protrusion arranged between the segments of the commutator coplanar with surfaces of the segments so that the adjacent segments are not short-circuited by the brushes and the brushes do not touch the protrusion.
Owner:TOKYO PARTS IND CO LTD

Jet vane and air vane linkage mechanism of aircraft

The invention discloses a jet vane and an air vane linkage mechanism of an aircraft. The linkage mechanism comprises a combustion chamber, an exhaust pipe, an exhaust pipe cover, a ball screw drive mechanism, a jet vane deflection mechanism and an air vane deflection mechanism, a servo motor rotor is connected with a lead screw through a coupling, the lead screw drives a lead screw nut to conduct linear motion in a rotary mode, so that an actuating rod and a piston actuator controls the jet vane and the air vane to conduct linkage deflection, and the deflection angles close to the same; and a motor fixing frame and a screw support frame are overlapped and fixed through the arc surface and the inner surface of the exhaust pipe cover, and the lead screw nut and the air vane are cooperatively transmitted through a cylinder bore piston structure. According to the jet vane and the air vane linkage mechanism of the aircraft, the structure is simple, mechanical transmission is stable, vane pieces are of cross-shaped layout, a steering engine can control the vane pieces to deflect flexibly, the jet vane and the air vane conduct linkage deflection, the efficiency of aircraft handling is improved greatly, four independent groups of the jet vanes and the air vanes are in linkage so that the flight attitude of the aircraft can be adjusted quickly, and the mobility of the aircraft can be improved greatly.
Owner:NANJING UNIV OF SCI & TECH

Two-machine intersection positioning method based on airborne opto-electronic platform

The invention discloses a two-machine intersection positioning method based on an airborne opto-electronic platform. The method can realize whole-course target tracking positioning, and can complete real-time positioning of a static state or dynamic target. The method firstly establishes a camera coordinate system, a carrier coordinate system, a carrier geography coordinate system, a geodetic rectangular coordinate system and a geodetic coordinate system, the a camera of two machines is used for simultaneous imaging the target, the target visual line vector quantity of each carrier enables cosine expression along the direction below the camera coordinate system; by coordinate transition, the obtained target visual line vector quantity of each carrier enables cosine expression along the direction below the geodetic rectangular coordinate system, then a carrier coordinate is combined to establish a linear equation, and the positioning on the target is realized by two simultaneous linear equations. The distance between the target and the platform is not required for measuring, assembling of a laser range finder is not required in a photoelectric platform, loading of the carrier is effectively reduced, and the requirements of real-time performance and mobility are satisfied.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI

Efficient cutting device for steel wire rope machining and cutting method

InactiveCN108405760AImprove mobilityImproves comfort and tractionBruiseWire rope
The invention discloses an efficient cutting device for steel wire rope machining and a cutting method in the technical field of steel wire rope machining. The efficient cutting device comprises a bottom plate; a control switch is arranged at the top of the outer wall of the right side of a vertical plate; a pushing rod handle is arranged at the bottom of the outer wall of the right side of the vertical plate; the outer wall of the circumference of a gear is engaged with the inner wall of a tooth plate; a cutting motor is arranged at the left end of the bottom of a supporting plate; the outerwall of a roller is wound with steel wire ropes; a fixture box body is arranged on the right side of the top of the bottom plate; and a cutting table is arranged in the center of the top of the fixture box body. The efficient cutting device is simple to operate; clamping blocks are hinged with the two ends of each arc-shaped chuck, so that the efficient cutting device has movable activity, the steel wire ropes in different specifications are clamped conveniently, the more accurate location of the steel wire ropes is facilitated, and stress in every direction is kept uniformly; buffering columns are contacted with the steel wire ropes in advance, buffering springs contract due to the stress, so that a buffering effect is exerted, and bruise and damage on the surface of the steel wire ropesdue to the excessive stress are avoided; and two clamping plates are used for clamping the steel wire ropes, so that stable cutting of a cutting knife on the steel wire ropes is facilitated.
Owner:苏州斯强金属制品有限公司

Metal oxide thin film transistor and preparation method thereof

InactiveCN101872787AReduce off-state currentImprove mobilityTransistorSemiconductor/solid-state device manufacturingElectrical stabilityOhmic contact
The invention discloses a metal oxide thin film transistor and a preparation method thereof. The metal oxide thin film transistor is composed of a grid electrode, an insulating layer, a transition layer, a semiconductor layer, a drain electrode and a source electrode, wherein the grid electrode, the insulating layer, the transition layer and the semiconductor layer are sequentially connected with each other from bottom to top; the drain electrode and the source electrode are positioned on the semiconductor layer; the transition layer and the semiconductor layer are prepared by means of sputtering with the same target being adopted in the process of sputtering, the material of the target is (In2O3)x(Ga2O3)y(ZnO)z, wherein x, y and z are not less than 0 but not more than 1, and x+y+z is equal to 1; and the transition layer and the insulating layer include excellent contact property so as to effectively lower carrier trap density between contact interfaces of the insulating layer and the transition layer as well as enhance output current of the transistor and improve electrical stability. The source electrode and the drain electrode can form outstanding ohmic contact with the semiconductor layer, thereby effectively reducing off-state current, raising on/off ratio of current and improving electronic carrier mobility.
Owner:SOUTH CHINA UNIV OF TECH
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