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581 results about "Crystal plane" patented technology

Method for obtaining monocrystal diamond (111) surface wafer by using double-pulse-width laser

The invention belongs to the technical field of crystal processing, and relates to a method for obtaining a single crystal diamond (111) surface wafer by using double-pulse-width laser. Femtosecond laser and picosecond laser are adopted for machining and stripping the blocky single crystal diamond to obtain a first crystal face (111), then femtosecond laser and picosecond laser are continuously adopted for machining and stripping the remaining blocky single crystal diamond, and the blocky single crystal diamond is obtained; the process for obtaining the crystal face (111) comprises the following steps of: scanning femtosecond laser on the crystal face (111) to process a plurality of graphitization modification lines which are full of the crystal face (111) and are parallel to each other, wherein the graphitization modification lines are parallel to the crystal orientation of a diagonal line [110] of the crystal face (001); carrying out scanning processing along the graphitization modification line by utilizing picosecond laser, so as to form a leap crack on the basis of the graphitization modification line of the crystal face (111); and then stripping is carried out. By means of the method, the wafer with the complete (111) face can be obtained through cutting in the ultra-thick (001) CVD monocrystal diamond.
Owner:SHANDONG UNIV

Positive electrode active material, preparation method, battery monomer, battery device and electric device

The invention relates to a positive electrode active material, a preparation method, a battery monomer, a battery device and a power utilization device. The positive electrode active material comprises an inner core and a first coating layer arranged on at least part of the surface of the inner core, the inner core comprises lithium manganese iron phosphate; the first coating layer comprises lithium iron phosphate; an X-ray diffraction pattern of the positive electrode active material comprises a diffraction peak of a (020) crystal face and a diffraction peak of a (200) crystal face, the diffraction peak of the (020) crystal face and the diffraction peak of the (200) crystal face meet the condition that I (020) / I (200) is larger than or equal to 3.5, I (020) represents the intensity of the diffraction peak of the (020) crystal face, and I (200) represents the intensity of the diffraction peak of the (200) crystal face. The positive electrode active material provided by the embodiment of the invention has good lithium ion diffusion performance, and when the positive electrode active material is used for a battery, the battery can have good rate capability.
Owner:JIANGSU CONTEMPORARY AMPEREX TECH LTD

Negative electrode active material, negative electrode sheet, sodium ion battery and electrical apparatus

A negative electrode active material, a negative electrode sheet, a sodium ion battery, and an electrical apparatus. The negative electrode active material comprises: hard carbon, the true density ρ of the hard carbon satisfying 1.3 g / cm3≤ρ≤1.8 g / cm3; and an intercalation-type sodium storage material, the crystal plane spacing d of the intercalation-type sodium storage material satisfying 0.24 nm≤d≤0.8 nm. The negative electrode active material can effectively reduce the risk of thermal runaway of sodium ion batteries.
Owner:CONTEMPORARY AMPEREX TECHNOLOGY CO LTD

Sodium ferric pyrophosphate material with sodium storage dominant crystal face regulated and controlled by cation doping as well as preparation method and application of sodium ferric pyrophosphate material

The invention discloses a sodium ferric pyrophosphate material with a sodium storage dominant crystal face regulated and controlled by cation doping as well as a preparation method and application of the sodium ferric pyrophosphate material. The chemical formula of the prepared sodium ferric pyrophosphate material with the regulated and controlled crystal structure is Na < 4 > Fe < 2.97 > M < 0.03 > (PO4) < 2 > P < 2 > O < 7 >. Wherein M = Sr, or Sr and a second doping element, and the second doping element is selected from one of Cd, Bi, Mo, Ni and Al. The material is prepared by adopting a sol-gel method, an iron source, a chelating agent, a sodium source, a phosphorus source and doping elements are dissolved in deionized water, and stirring is performed until a gel state is formed; and drying and calcining twice to obtain a final product. The sodium ferric pyrophosphate electrode material prepared by the invention has more sodium storage dominant crystal faces, shows good electrochemical performance, has the advantages of simple preparation process, easily available raw materials and low cost, has remarkable industrial application value, and is easy for large-scale production.
Owner:CHANGZHOU UNIV

Optical fiber coupler and method of manufacturing

The present invention provides an optical waveguide coupler (1) comprising a crystalline substrate (2) of a (100) type having a top surface (2a) and a (100) crystallographic plane (2100), wherein the crystalline substrate (2) comprises: a V-groove (3) extending in a Z-direction (Z) in a projection onto the top surface (2a), wherein the Z-direction (Z) lies within a 〈110〉 crystal plane (2110) of the crystalline substrate (2), wherein the top surface (2a) and a 〈100〉 crystal plane (2100) of the crystalline substrate (2) form a first angle (α1) in an X / Y plane (XY) perpendicular to the Z-direction (Z), and an optical waveguide arranged on the top surface (2a) of the crystalline substrate (2). (4), wherein the optical waveguide (4) extends along the Z-direction (Z) in a projection to the top side, wherein the V-groove (3) and the optical waveguide (4) are designed such that,When an optical fiber (5) having a predetermined size and a fiber core (51) and a fiber tip (52) is inserted into the V-groove (3) such that a distance between an outer end (42) of the waveguide core (4) and the fiber tip (52) is less than a predetermined distance (d), the fiber core (51) is aligned with the waveguide core (41) such that a displacement of the fiber core (51) and the waveguide core (41) is less than a predetermined displacement. Furthermore, the present invention provides a method for manufacturing an optical fiber coupler (1).
Owner:LIGENTEC SA

Positive electrode material and preparation method therefor, and battery

The present invention relates to the field of positive electrode materials, and provides a positive electrode material and a preparation method therefor, and a battery. The positive electrode material comprises a base material and a coating layer located on the surface of the base material. The chemical general formula of the base material is LiaNibCocMdO2, wherein 0.95≤a≤1.08, 0.3≤b≤1, 0≤c≤0.7, 0≤d≤0.2, b+c+d=1, and M is a metal element. The coating layer comprises a fast ion conductor material. In an XRD spectrum of the positive electrode material, the number of crystal planes of the positive electrode material on a crystal plane (003) is P003, the number of crystal planes of the positive electrode material on a crystal plane (104) is P104, 10≤P003≤300, 10≤P104≤400, and 0.55≤P003 / P104. According to the positive electrode material, the impedance of the positive electrode material is reduced, the transmission of lithium ions is accelerated, and the initial discharge capacity and the initial coulombic efficiency are improved.
Owner:SHENZHEN CITY BATTERY NANOMETER TECH

GaN SUBSTRATE

A GaN substrate includes a main surface 1 inclined by 0° to 10° from a (0001) crystal plane which is a Ga-polar plane, and including a Si-doped GaN layer on at least a surface of the main surface 1, in which the Si-doped GaN layer has a Si concentration of 1×1018 atoms / cm3 or more, and a total of bottom areas of recessed defects on a surface of the Si-doped GaN layer is 15% or less of an area of the entire surface of the Si-doped GaN layer.
Owner:MITSUBISHI CHEM CORP

Crystal growth method and system, apparatus, and storage medium

A crystal growth method and system, an apparatus, and a storage medium. The crystal growth method comprises: determining a parameter set of a crystal growth device in a target heat, wherein the parameter set comprises at least one target parameter, and the target parameter is a parameter, affecting crystal growth, in the crystal growth device; acquiring a first temperature measurement value of a first temperature measurement point of the crystal growth device in a target time period of the target heat; and on the basis of the target parameter and the first temperature measurement value, by means of a crystal plane temperature determination model, determining a simulated crystal plane temperature corresponding to the first temperature measurement value.
Owner:MEISHAN BOYA ADVANCED MATERIALS CO LTD

Sodium battery positive electrode material and preparation method, precursor and application thereof

The embodiment of the invention provides a sodium battery positive electrode material as well as a preparation method, a precursor and application thereof. The sodium battery positive electrode material comprises a sodium-based metal oxide, an X-ray diffraction spectrum of the material comprises diffraction peaks of the following 12 crystal faces: (003), (006), (101), (012), (104), (107), (018), (110), (113), (1010), (116) and (024), and the ratio of the peak area of the diffraction peak of the crystal face (003) to the sum of the peak areas of the diffraction peaks of the 12 crystal faces is less than 25%. The positive electrode material meeting the conditions is high in particle sphericity degree and relatively round and full in structure, so that the material is relatively high in compaction density and relatively good in dynamic performance, and the energy density and the rate capability of the sodium battery are conveniently improved.
Owner:HUAWEI TECH CO LTD

Positive electrode active material, preparation method thereof, positive electrode sheet, battery and electrical equipment

The present invention discloses a positive electrode active material, a preparation method thereof, a positive electrode sheet, a battery and an electrical device. The positive electrode active material includes a plurality of primary particles, and the equivalent number of sheet layers N of the (003) crystal plane of the positive electrode active material (003) and the equivalent number of sheet layers N of the (104) crystal plane (104) satisfy: N (003) *N (104) is 1×10 4 -3×10 4 , where D (003) is the average thickness of the positive electrode active material microcrystal in the direction perpendicular to the (003) crystal plane, with the unit of nm, and d (003) is the crystal plane spacing of the (003) crystal plane in the positive electrode active material microcrystal, with the unit of nm, D (104) is the average thickness of the positive electrode active material microcrystal in the direction perpendicular to the (104) crystal plane, with the unit of nm, and d (104) is the crystal plane spacing of the (104) crystal plane in the positive electrode active material microcrystal, with the unit of nm. Thus, by using this positive electrode active material, the battery loaded with it can take into account high energy density, cycle performance, rate performance and safety performance.
Owner:BEIJING EASPRING MATERIAL TECH CO LTD

Substrate for high-frequency device and method for manufacturing same

The present invention is a substrate for a high-frequency device in which a nitride semiconductor film is formed on an SOI substrate, the SOI substrate being a TRSOI substrate in which a trap-rich layer formed on a base substrate and an SOI layer comprising single crystal silicon are bonded with an oxide film interposed therebetween, the SOI layer having a resistivity of 1 k [omega] * cm or more and a crystal plane orientation of (111). And the oxygen concentration is 14.8 ppma or less. As a result, a substrate for a high-frequency device having excellent high-frequency characteristics and a method for manufacturing the same are provided.
Owner:SHIN ETSU HANDOTAI CO LTD

Silicon carbide planar mosfet device and manufacturing method therefor

PendingUS20250331226A1MOSFETCarbide silicon
The present invention provides a planar silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) device and a manufacturing method therefor. Some shallow trenches are arranged based on that a channel current is still parallel to a (0001) crystal plane of a SiC crystal, to further effectively use a crystal plane having a high channel mobility, for example, a (1120) crystal plane, a (1100) crystal plane, or a (0338) crystal plane, of the SiC crystal, thereby effectively reducing channel resistance of the planar SiC MOSFET device. In addition, source regions, well regions, and a channel are formed without protection from an additional ion implanted layer (IMP layer), leading to simple processes.
Owner:UNITED NOVA TECHNOLOGY YUEZHOU (SHAOXING) CORP

Silver particle modified and carbon coated lithium manganese iron phosphate positive electrode material and preparation method thereof

The invention discloses a silver particle modified and carbon coated lithium manganese iron phosphate positive electrode material and a preparation method thereof, and relates to the technical field of materials.The preparation method comprises the steps that a lithium source, an iron source, a manganese source and a phosphorus source are mixed and dissolved, and a mixed solution is obtained; adding a silver ion solution into the mixed solution, and carrying out a first hydrothermal reaction to obtain a reaction solution; mixing the reaction liquid with a carbon source and a reducing agent, carrying out a second hydrothermal reaction, and separating a solid phase to obtain a precursor; and sintering the precursor to obtain the lithium iron manganese phosphate positive electrode material. In the hydrothermal reaction stage, silver ions can inhibit rapid growth of high-energy crystal faces, and finally more high-energy crystal faces are exposed. And in the sintering stage, silver ions are reduced into simple substances to modify the carbon layer, a carbon-metal composite conductive network is formed, and the conductivity of the carbon layer is improved. The preparation method is simple and convenient to operate, can quickly and efficiently form the nanoscale lithium manganese iron phosphate positive electrode material with relatively good electrical properties and [001] crystal face orientation, and has a relatively good application prospect.
Owner:SICHUAN FULIN NEW ENERGY TECH CO LTD

Method for detecting dislocation of single crystal silicon specimen, method for determining target value of oxygen concentration of single crystal silicon wafer, method for manufacturing single crystal silicon ingot, and method for manufacturing single crystal silicon wafer

To provide a novel method for detecting dislocation that is present in a single crystal silicon specimen after a coating is formed thereto.SOLUTION: A method for detecting dislocation of a single crystal silicon specimen includes a step of detecting a part as dislocation that is observed as a bright line in an electronic channeling image that is acquired by irradiating a surface of a single crystal silicon specimen with an electron beam by a scanning electron microscope, where the irradiation with the electron beam includes a step of irradiating one or more crystal planes of the single crystal silicon specimen with the electron beam in an incidence azimuth within a range of satisfying an electronic channeling condition and the one or more crystal planes include a {220} surface.SELECTED DRAWING: None
Owner:SUMCO CORP

Multi-scale research method for improving impurity separation efficiency in ultra-pure metal system

The invention discloses a multi-scale research method for improving the separation efficiency of impurities in an ultra-pure metal system. The multi-scale research method comprises the following steps that tellurium crystals are prepared through a zone melting method, and purity and crystal face orientation analysis is conducted; simulation analysis is carried out in combination with experimental data, firstly, phase field simulation is used for analyzing conversion of an interface structure and grain competition-driven orientation in the solidification process, then the density functional theory is used for calculating and analyzing adsorption energy of solid phases on different crystal faces at the solid-liquid interface to impurity atoms, and the structure-activity relationship between crystal face orientation and impurity separation efficiency is obtained. Finally, the crystal face and the preferred orientation degree of the tellurium crystal are regulated and controlled through a Bridgman method, and the impurity separation efficiency is improved. By means of the mode, the key factors influencing trace impurity atom separation can be obtained, the universal method for improving the impurity separation efficiency in the ultra-pure metal system is obtained, and development of the non-ferrous metal metallurgy field is promoted.
Owner:ZHENGZHOU UNIV

Substrate having upper surface oriented to (111) crystal plane, graphene laminated structure including same, and electric device including same

The present invention relates to: a substrate having an upper surface oriented to a (111) crystal plane; and a graphene laminated structure including same. Particularly, disclosed is a substrate having an upper surface oriented to a (111) crystal plane, the substrate comprising: a metal foil substrate; a metal oxide thin film formed by deposition of a cubic metal oxide on the substrate, and crystal-oriented so that the orientation of the (001) crystal plane of the metal oxide is parallel to the perpendicular direction to the surface of the substrate; a (001) crystal plane-oriented first thin film formed on the metal oxide thin film by deposition of a first metal having a hexagonal crystal structure, and crystal-oriented so that the orientation of the (001) crystal plane of the first metal is parallel to the perpendicular direction to the surface of the substrate; and a (111) crystal plane-oriented second thin film formed on the first thin film by deposition of a cubic metal oxide, and crystal-oriented so that the orientation of the (111) crystal plane of the second metal is parallel to the perpendicular direction to the surface of the substrate.
Owner:KOREA ELECTROTECH RES INST

Wave-absorbing material chemical coprecipitation reaction kettle

The invention discloses a wave-absorbing material chemical coprecipitation reaction kettle, and relates to the technical field of chemical engineering equipment and functional material preparation, the reaction kettle comprises the following components: a three-stage gradient reaction cavity structure, an anti-pollution structure and a multi-physics field coupling control platform; through the design of a three-stage gradient reaction cavity structure, optimal distribution of a fluid field is realized, stable and efficient flowing of a reaction solution among different cavities is ensured, a multi-axis intelligent mixing system in a premixing area can quickly mix a precursor solution to achieve a molecular-level mixing state, an ideal initial condition is provided for subsequent reaction, and the reaction efficiency is improved. The nucleation area realizes uniform nucleation of nanocrystal nuclei through accurate temperature control and chemical environment control, the grain size distribution range is effectively reduced, the growth area controls preferred growth of crystal faces through adjustment of magnetic field intensity and solution supersaturation degree, particles with good monodispersity are obtained, and under the combined action of the designs, the particle size distribution range is effectively reduced. The reaction efficiency and the consistency of the product quality are obviously improved.
Owner:SHENZHEN HFC SHIELDING PRODS CO LTD

Gallium nitride single crystal substrate and method for producing the same

There is provided a gallium nitride single crystal substrate, which is a gallium nitride single crystal substrate having a diameter of 50 mm or more, with a low-index crystal plane closest to a main surface being (0001), and in which a Mn concentration in the substrate is 5×1017 cm−3 or more; and secondary ion mass spectrometry at a plurality of arbitrary points on the main surface reveals that a variation in the Mn concentration is within ±20% from an average value.
Owner:SUMITOMO CHEM CO LTD

BiOCl photocatalyst as well as preparation method and application thereof

The invention provides a BiOCl photocatalyst as well as a preparation method and application thereof, and relates to the technical field of photocatalytic materials. The preparation method comprises the following steps: mixing bismuth salt, chlorine salt and a solvent, and carrying out solvothermal reaction on the obtained mixed solution to obtain the BiOCl photocatalyst, the solvent is ethylene glycol, water or ethanol; when the solvent is ethylene glycol or water, the mixed solution further comprises glucose. The morphology and crystal face of BiOCl can be simply and conveniently regulated and controlled, the BiOCl photocatalyst with excellent photocatalytic performance is obtained, specifically, accurate morphology regulation and control are realized by regulating a reaction solvent, and crystal face regulation and control and carbon doping are realized by regulating and controlling glucose addition. In addition, according to the method, reaction raw materials are simple and easy to obtain, reaction conditions are mild, and addition of a surfactant is not needed. The BiOCl photocatalyst prepared by the invention has excellent performance of photocatalytic degradation of organic pollutants and photocatalytic reduction of heavy metal ions.
Owner:JILIN TEACHERS INST OF ENG & TECH

Manganese-based battery positive electrode material precursor and preparation method and application thereof

The invention relates to the technical field of battery positive electrode materials, discloses a manganese-based battery positive electrode material precursor as well as a preparation method and application thereof, and belongs to the technical field of battery preparation. According to the technology for preparing the manganese-based battery positive electrode material precursor, a solid-phase method is mainly adopted, a high-temperature melting technology is adopted, the manganese-based positive electrode material is subjected to doping modification through multiple elements at the same time, then surface coating is carried out, the density of the synthesized positive electrode material is improved, the structural stability of the synthesized positive electrode material is enhanced, and the morphology, the crystal face and the crystal boundary of the positive electrode material are optimized; the side reaction between the crystal interface of the positive electrode material and electrolyte is inhibited, the service life is prolonged, and the safety performance during use is enhanced. A small amount of water vapor and carbon dioxide gas generated in the preparation process are discharged at high altitude, so that the environment is not polluted.
Owner:ANHUI XINNA MATERIAL SCIENCE & TECHNOLOGY CO LTD

Sodium ion battery cathode material and preparation method thereof and sodium ion battery

The present application relates to the technical field of sodium-ion batteries, in particular to a sodium ion battery cathode material, a preparation method thereof, and a sodium ion battery, in an XRD spectrogram of the cathode material, the characteristic diffraction peak A of (003) crystal plane and the characteristic diffraction peak B of (104) crystal plane are arranged at 2θ of 15-19° and 39-44°, respectively; wherein the microcrystalline size DA of the characteristic diffraction peak A and the microcrystalline size DB of the characteristic diffraction peak B satisfy the following condition: 1.3≤DA / DB≤2.5, wherein DA and DB correspond to the microcrystalline sizes of the (003) crystal plane and the (104) crystal plane in the perpendicular line direction, respectively.
Owner:BEIJING EASPRING MATERIAL TECH CO LTD

Resin molded member with excellent scratch resistance and durability

A resin molded member having excellent surface scratch resistance and various properties required for a resin molded member is disclosed. The resin molded member according to the present invention comprises a crystalline resin, and a signal intensity ratio of peaks which are measured by X-ray diffraction and correspond to two main crystal planes in an outermost layer of the member is maintained up to a depth of at least 9.0 μm from the outermost layer, i.e., the outermost surface of the member. The resin molded member has excellent performance such as durability, strength, and dimensional retention in addition to scratch resistance, and can be preferably used as a so-called water-related device member.
Owner:TOTO LTD

Gallium nitride single crystal substrate and method for producing the same

There is provided a gallium nitride single crystal substrate, which is a gallium nitride single crystal substrate having a diameter of 50 mm or more, with a low-index crystal plane closest to a main surface being (0001), and in which an average density of etch pits during etching applied to the main surface using an alkaline etching solution is less than 1×106 cm−2; and in histograms of diameters of the etch pits in multiple different regions on the main surface, and among peaks appearing in the histograms, when a diameter of a first peak which is a smallest diameter is denoted as a, a diameter of a second peak which is a second smallest diameter is denoted as b, frequency of the first peak (the number of etch pits) is denoted as A, frequency of the second peak is denoted as B, the number of the etch pits constituting the first peak is denoted as α, and the number of the etch pits constituting the second peak is denoted as β, at least one of the following conditions (1), (2), and (3) is satisfied: (1) variation in a / b values in the multiple histograms is within ±5% of an average value. (2) variation in A / B values in the multiple histograms is within ±15% of an average value. (3) variation in α / β values in the multiple histograms is within ±30% of an average value.
Owner:SUMITOMO CHEM CO LTD

n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production method

Provided is an n-type GaN crystal, in which a donor impurity contained at the highest concentration is Ge, and which has a room-temperature resistivity of lower than 0.03 Ω·cm and a (004) XRD rocking curve FWHM of less than 20 arcsec. The n-type GaN crystal has two main surfaces, each having an area of 3 cm2 or larger. One of the two main surfaces can have a Ga polarity and can be inclined at an angle of 0° to 10° with respect to a (0001) crystal plane. Further, the n-type GaN crystal can have a diameter of 20 mm or larger.
Owner:MITSUBISHI CHEM CORP

Lead iodide crystal and method for adjusting preferred orientation of lead iodide crystal face

The invention belongs to the technical field of lead iodide crystal preparation, and discloses a lead iodide crystal and a method for adjusting the preferred orientation of a lead iodide crystal face, the method for adjusting the preferred orientation of the lead iodide crystal face comprises the following steps: step 1, adding an acid solution into a lead iodide solution, and diluting the lead iodide solution until the concentration of lead iodide is 10mM-50mM; 2, the diluted lead iodide solution is subjected to aging treatment, a solid-liquid mixture is obtained, the aging temperature ranges from 25 DEG C to 120 DEG C, the aging pressure is smaller than or equal to 6 Mpa, and the aging time ranges from 2 h to 4 h; and step 3, controlling the cooling rate of the solid-liquid mixture to be 6-10 DEG C / min for cooling, and then separating to obtain solid lead iodide. According to the method disclosed by the invention, the preferred growth condition of the lead iodide crystal face is controlled through concentration control, an aging process and a sectional cooling process under the condition that a complexing agent, a surfactant or a template agent does not need to be additionally added.
Owner:FIRST RARE MATERIALS CO LTD

Lithium iron phosphate positive electrode material, positive electrode sheet and preparation method thereof

The invention discloses a lithium iron phosphate positive electrode material, a positive plate and a preparation method thereof. The material comprises a LiFePOO core with (010) crystal face preferred orientation (the orientation degree is larger than 80%) and a gradient carbon coating layer, the core is co-doped with Ti and F (Ti occupies Li sites, F replaces O sites, and the doping amount x is 0.02-0.08), and the gradient carbon coating layer sequentially comprises microporous carbon, mesoporous carbon and a macroporous carbon / graphene composite layer from inside to outside. The preparation method comprises an optimized liquid phase coprecipitation-segmented sintering process, and comprises the steps of compounding a carbon source in a specific proportion, precisely controlled freeze drying and gradient sintering. The material has excellent ion / electron transmission performance, the 0.2 C specific capacity is greater than or equal to 155mAh / g, the 5C capacity retention ratio is greater than 95%, the low-temperature performance at-40 DEG C is excellent, and the 2000-cycle capacity retention ratio is greater than 90%. The invention also provides a positive plate and a lithium ion battery containing the material, and the positive plate and the lithium ion battery are particularly suitable for high-power power batteries and extreme environments.
Owner:ZHEJIANG FUTURE XINNENG BATTERY TECHNOLOGY GROUP CO LTD

Porous carbon for negative electrode material and composite material for lithium ion secondary battery

Porous carbon for a negative electrode material and a preparation method therefor. In a Raman spectrogram of the porous carbon, the ratio (ID / IG) of D peak intensity (ID) to G peak intensity (IG) is 0.10-1.50; and in an X-ray diffraction pattern of the porous carbon, the diffraction angle 2θ of a (002) crystal plane is 24.00-26.53°, and the specific surface area BET of the porous carbon is 600-3000 m2 / g. A composite material comprising the porous carbon, a negative electrode sheet comprising the composite material, and a lithium ion secondary battery. The porous carbon material has desirable properties, such as graphitization degree and pore structure. The composite material can be used as a battery negative electrode material, and can significantly improve the electrical properties of the battery. The methods for preparing the porous carbon and the composite material are simple and easy to operate, and can be applied to batch production.
Owner:NOVUSILICON CORP

A method for preparing (002) crystal plane-oriented metallic zinc and its application

This invention provides a method for preparing (002) crystal-plane oriented metallic zinc and its application. The invention employs a two-electrode electrochemical deposition technique, using iron foil, titanium foil, or copper foil as the working electrode, commercial zinc foil as the counter electrode, and an aqueous zinc salt solution as the electrolyte. Constant current density discharge deposition is used to deposit (002) crystal-plane oriented metallic zinc on the working electrode; the constant current density is 50 mA cm⁻¹. ‑2 ~200 mA cm ‑2 The (002) crystal-plane oriented metallic zinc prepared by this invention can be used in rechargeable zinc-ion batteries. The two-electrode electrolytic cell device used in the preparation of metallic zinc in this invention is simple, the preparation process is straightforward, and the preparation method is more universal. The (002) crystal-plane oriented metallic zinc prepared according to the method of this invention can suppress zinc dendrite growth and hydrogen evolution, thereby improving the service life of rechargeable zinc-ion batteries.
Owner:HEBEI UNIVERSITY

Mineral raw material production control system based on Internet of Things

The invention discloses a mineral raw material production control system based on Internet of Things, and particularly relates to the field of production control, comprising: a dielectric anomaly labeling module labels a dielectric anomaly candidate area through a phase offset of a radio frequency unit reflection signal, and generates an electromagnetic field gradient; the crystal face cleavage effect judgment module analyzes the radio frequency array reflection signal, establishes an interference spectrum matrix, solves the characteristic relaxation time, judges the dynamic change of the relaxation time, and triggers a crystal face cleavage effect signal; the dielectric instability judgment module analyzes dielectric property changes and triggers signals by controlling instability conditions; the radio frequency control module solves a maximized path and generates a radio frequency pulse sequence by taking the crushing energy efficiency ratio as an optimization reference; the crushing control module optimizes PID control parameters based on reinforcement learning, adjusts the three-dimensional axis posture of a crusher hydraulic cylinder, and optimizes the energy efficiency of the crushing process.
Owner:SHANDONG HUAXU ENVIRONMENTAL PROTECTION TECHNOLOGY CO LTD

Carbon material and preparation method thereof, secondary battery and electric device

The invention provides a carbon material and a preparation method thereof, a secondary battery and an electric device. The carbon material has a porous structure, and the interlayer spacing of a 002 crystal face is 0.3523 nm to 0.3671 nm. The carbon material is used as a negative electrode active material, so that a secondary battery has relatively long cycle life, and meanwhile, the fast charging performance of the battery is improved.
Owner:CONTEMPORARY AMPEREX TECHNOLOGY CO LTD