403 results about "Crystal plane" patented technology

The invention relates to a positive electrode active material, a preparation method, a battery monomer, a battery device and a power utilization device. The positive electrode active material comprises an inner core and a first coating layer arranged on at least part of the surface of the inner core, the inner core comprises lithium manganese iron phosphate; the first coating layer comprises lithium iron phosphate; an X-ray diffraction pattern of the positive electrode active material comprises a diffraction peak of a (020) crystal face and a diffraction peak of a (200) crystal face, the diffraction peak of the (020) crystal face and the diffraction peak of the (200) crystal face meet the condition that I (020) / I (200) is larger than or equal to 3.5, I (020) represents the intensity of the diffraction peak of the (020) crystal face, and I (200) represents the intensity of the diffraction peak of the (200) crystal face. The positive electrode active material provided by the embodiment of the invention has good lithium ion diffusion performance, and when the positive electrode active material is used for a battery, the battery can have good rate capability.

A GaN substrate includes a main surface 1 inclined by 0° to 10° from a (0001) crystal plane which is a Ga-polar plane, and including a Si-doped GaN layer on at least a surface of the main surface 1, in which the Si-doped GaN layer has a Si concentration of 1×1018 atoms / cm3 or more, and a total of bottom areas of recessed defects on a surface of the Si-doped GaN layer is 15% or less of an area of the entire surface of the Si-doped GaN layer.

The embodiment of the invention provides a sodium battery positive electrode material as well as a preparation method, a precursor and application thereof. The sodium battery positive electrode material comprises a sodium-based metal oxide, an X-ray diffraction spectrum of the material comprises diffraction peaks of the following 12 crystal faces: (003), (006), (101), (012), (104), (107), (018), (110), (113), (1010), (116) and (024), and the ratio of the peak area of the diffraction peak of the crystal face (003) to the sum of the peak areas of the diffraction peaks of the 12 crystal faces is less than 25%. The positive electrode material meeting the conditions is high in particle sphericity degree and relatively round and full in structure, so that the material is relatively high in compaction density and relatively good in dynamic performance, and the energy density and the rate capability of the sodium battery are conveniently improved.

The present invention provides a planar silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) device and a manufacturing method therefor. Some shallow trenches are arranged based on that a channel current is still parallel to a (0001) crystal plane of a SiC crystal, to further effectively use a crystal plane having a high channel mobility, for example, a (1120) crystal plane, a (1100) crystal plane, or a (0338) crystal plane, of the SiC crystal, thereby effectively reducing channel resistance of the planar SiC MOSFET device. In addition, source regions, well regions, and a channel are formed without protection from an additional ion implanted layer (IMP layer), leading to simple processes.

The invention discloses a multi-scale research method for improving the separation efficiency of impurities in an ultra-pure metal system. The multi-scale research method comprises the following steps that tellurium crystals are prepared through a zone melting method, and purity and crystal face orientation analysis is conducted; simulation analysis is carried out in combination with experimental data, firstly, phase field simulation is used for analyzing conversion of an interface structure and grain competition-driven orientation in the solidification process, then the density functional theory is used for calculating and analyzing adsorption energy of solid phases on different crystal faces at the solid-liquid interface to impurity atoms, and the structure-activity relationship between crystal face orientation and impurity separation efficiency is obtained. Finally, the crystal face and the preferred orientation degree of the tellurium crystal are regulated and controlled through a Bridgman method, and the impurity separation efficiency is improved. By means of the mode, the key factors influencing trace impurity atom separation can be obtained, the universal method for improving the impurity separation efficiency in the ultra-pure metal system is obtained, and development of the non-ferrous metal metallurgy field is promoted.

The invention provides a BiOCl photocatalyst as well as a preparation method and application thereof, and relates to the technical field of photocatalytic materials. The preparation method comprises the following steps: mixing bismuth salt, chlorine salt and a solvent, and carrying out solvothermal reaction on the obtained mixed solution to obtain the BiOCl photocatalyst, the solvent is ethylene glycol, water or ethanol; when the solvent is ethylene glycol or water, the mixed solution further comprises glucose. The morphology and crystal face of BiOCl can be simply and conveniently regulated and controlled, the BiOCl photocatalyst with excellent photocatalytic performance is obtained, specifically, accurate morphology regulation and control are realized by regulating a reaction solvent, and crystal face regulation and control and carbon doping are realized by regulating and controlling glucose addition. In addition, according to the method, reaction raw materials are simple and easy to obtain, reaction conditions are mild, and addition of a surfactant is not needed. The BiOCl photocatalyst prepared by the invention has excellent performance of photocatalytic degradation of organic pollutants and photocatalytic reduction of heavy metal ions.

The present application relates to the technical field of sodium-ion batteries, in particular to a sodium ion battery cathode material, a preparation method thereof, and a sodium ion battery, in an XRD spectrogram of the cathode material, the characteristic diffraction peak A of (003) crystal plane and the characteristic diffraction peak B of (104) crystal plane are arranged at 2θ of 15-19° and 39-44°, respectively; wherein the microcrystalline size DA of the characteristic diffraction peak A and the microcrystalline size DB of the characteristic diffraction peak B satisfy the following condition: 1.3≤DA / DB≤2.5, wherein DA and DB correspond to the microcrystalline sizes of the (003) crystal plane and the (104) crystal plane in the perpendicular line direction, respectively.

The invention discloses a lithium iron phosphate positive electrode material, a positive plate and a preparation method thereof. The material comprises a LiFePOO core with (010) crystal face preferred orientation (the orientation degree is larger than 80%) and a gradient carbon coating layer, the core is co-doped with Ti and F (Ti occupies Li sites, F replaces O sites, and the doping amount x is 0.02-0.08), and the gradient carbon coating layer sequentially comprises microporous carbon, mesoporous carbon and a macroporous carbon / graphene composite layer from inside to outside. The preparation method comprises an optimized liquid phase coprecipitation-segmented sintering process, and comprises the steps of compounding a carbon source in a specific proportion, precisely controlled freeze drying and gradient sintering. The material has excellent ion / electron transmission performance, the 0.2 C specific capacity is greater than or equal to 155mAh / g, the 5C capacity retention ratio is greater than 95%, the low-temperature performance at-40 DEG C is excellent, and the 2000-cycle capacity retention ratio is greater than 90%. The invention also provides a positive plate and a lithium ion battery containing the material, and the positive plate and the lithium ion battery are particularly suitable for high-power power batteries and extreme environments.

This invention provides a method for preparing (002) crystal-plane oriented metallic zinc and its application. The invention employs a two-electrode electrochemical deposition technique, using iron foil, titanium foil, or copper foil as the working electrode, commercial zinc foil as the counter electrode, and an aqueous zinc salt solution as the electrolyte. Constant current density discharge deposition is used to deposit (002) crystal-plane oriented metallic zinc on the working electrode; the constant current density is 50 mA cm⁻¹. ‑2 ~200 mA cm ‑2 The (002) crystal-plane oriented metallic zinc prepared by this invention can be used in rechargeable zinc-ion batteries. The two-electrode electrolytic cell device used in the preparation of metallic zinc in this invention is simple, the preparation process is straightforward, and the preparation method is more universal. The (002) crystal-plane oriented metallic zinc prepared according to the method of this invention can suppress zinc dendrite growth and hydrogen evolution, thereby improving the service life of rechargeable zinc-ion batteries.

The invention relates to the technical field of electro-catalytic material synthesis, and particularly discloses a tower-shaped nickel hydroxide catalytic material and a preparation method thereof. The preparation method of the tower-shaped nickel hydroxide catalytic material comprises the following steps: (1) surface treatment of a nickel substrate: performing ultrasonic cleaning treatment on the nickel substrate, and performing vacuum drying to obtain the cleaned nickel substrate; and (2) synthesis of tower-shaped nickel hydroxide: dissolving phosphate to obtain a phosphate solution, adding hydrogen peroxide, stirring, adding the cleaned nickel substrate, and carrying out hydrothermal reaction to obtain a semi-finished product of tower-shaped nickel hydroxide. And (3) cleaning and drying the tower-shaped nickel hydroxide: cleaning the semi-finished product tower-shaped nickel hydroxide, and carrying out vacuum drying to obtain the tower-shaped nickel hydroxide catalytic material. The method is simple in process, relatively low in cost and easy for large-scale synthesis, and has a relatively good large-scale commercial application prospect; and the specific morphology effectively exposes active crystal faces and active sites, and as an excellent catalyst, the catalyst can improve the hydrogen production rate and the organic matter oxidation rate.

Provided is an n-type GaN crystal, which has two main surfaces facing opposite directions from each other. One of the two main surfaces has a Ga polarity and is inclined at an angle of 0° to 10° with respect to the (0001) crystal plane. The n-type GaN crystal yields at least one X-ray anomalous transmission image having a square area of 10 mm×10 mm, preferably 15 mm×15 mm, and more preferably 20 mm×20 mm. In addition, the n-type GaN crystal has a Si concentration of 5×1016 atoms / cm3 or higher, O concentration of 3×1016 atoms / cm3 or lower, and / or a H concentration of 1×1017 atoms / cm3 or lower.

The invention discloses a PZT film with different preferred orientations induced by a Si (100) substrate and a preparation method, the PZT film comprises the Si substrate with the (100) crystal orientation and an induction layer, and the induction layer comprises a ZrO2 layer, a Pt layer and a LaNiO3 layer which are deposited in sequence; the Pt layer is one of a (200) crystal orientation Pt layer and a (111) crystal orientation Pt layer; the orientation of the PZT film corresponding to the Pt layer in the (200) crystal orientation is (001) or (110); the orientation of the PZT film corresponding to the Pt layer in the (111) crystal orientation is (111); the ZrO2 / Pt / LaNiO3 thin film is prepared on the silicon (100) substrate through a magnetron sputtering deposition method, crystal face orientation growth of Pt (200) and (111) is achieved, and the PZT thin film with single orientation of (001), (110) and (111) is successfully induced.

This invention discloses an ultra-low roughness chemical silver plating solution for 6G communication, comprising 2-5 g / L silver nitrate, 10-15 g / L complexing agent, 5-8 g / L nicotinic acid, 2-5 g / L reducing agent, 1-3 g / L stabilizer, 0.1-0.5 g / L surfactant, 10-30 g / L pH adjuster, 0.01-0.1 g / L grain refiner, 0.1-0.5 g / L antioxidant, and water. The invention also provides a method for its preparation. Compared with existing technologies, this invention uses specific halogenated compounds to modify uracil, improving its defects and making it less prone to ionization. The introduced groups also impart crystal plane guiding function, thereby achieving an ultra-low surface roughness of the plating layer.

This invention provides a method for growing single crystals of group III nitrides that can improve crystal quality. [Solution] A method for growing a group III nitride single crystal, comprising: an initial nucleation step S1 in which a seed substrate having a plurality of seed crystals made of group III nitride single crystals formed on its upper surface is immersed in a mixed molten liquid stored in a crucible to form a plurality of initial nuclei; a planarization step S2 in which the seed substrate is repeatedly immersed in the mixed molten liquid and then lifted out, and heated in a nitrogen atmosphere to fill the spaces between adjacent initial nuclei with group III nitride single crystals and flatten the crystal plane; and a thickening step S3 in which the seed substrate having the flattened crystal plane is immersed in a mixed molten liquid stored in a crucible to form a thickened group III nitride single crystal on the seed substrate, wherein in the initial nucleation step S1, the mixed molten liquid does not contain alkali metals and alkaline earth metals other than Na, and in the thickening step S3, the mixed molten liquid contains alkali metals or alkaline earth metals other than Na.

A coated member of the present invention includes a substrate and a hard coating film that is formed on the surface of the substrate and includes a nitride or carbonitride of a metal element. A content of Al is 65 atom % or more and 85 atom % or less, a content of Cr is 15 atom % or more and 35 atom % or less, and a total content of Al and Cr is 90 atom % or more and 100 atom % or less in a total amount of the metal element and metalloid element contained in the hard coating film, and in an intensity profile obtained from a selected area diffraction pattern of a transmission electron microscope, a crystal plane exhibiting a maximum peak intensity is different between a vicinity of the substrate and a vicinity of the surface, in the vicinity of the substrate, a peak corresponding to a (111) plane or a (200) plane of a face-centered cubic lattice structure exhibits a maximum intensity, and in the vicinity of the surface, a peak intensity corresponding to a (220) plane is 0.6 times or more a larger one of a peak intensity corresponding to the (200) plane and a peak intensity corresponding to the (111) plane of the face-centered cubic lattice structure.

Semiconductor substrate of a nitride of a group III element, comprising: a first surface; and a second surface where the distortion of a crystal plane of the first surface exhibits a multitude of extremes.

The invention provides a multilayer ceramic capacitor and a method of manufacturing the same. The multilayer ceramic capacitor includes: a capacitor body including a dielectric layer and an inner electrode layer; and an outer electrode disposed on an outer surface of the capacitor body, in which the inner electrode layer includes nickel (Ni), and a space lattice side length of the nickel (Ni) obtained according to Formula 1 by X-ray diffraction (XRD) analysis on the inner electrode layer is about to about [Formula 1] in Formula 1, lambda is a wavelength of a Cu K alpha ray, values of lambda are h, k and l are crystal plane indexes, and theta is a Bragg angle.

A silver particle-modified carbon-coated lithium manganese iron phosphate cathode material and a preparation method thereof relate to the field of material technology. The preparation method comprises the following steps: mixing and dissolving a lithium source, an iron source, a manganese source, and a phosphorus source to obtain a mixed solution; adding a silver ion solution to the mixed solution, performing a first hydrothermal reaction, and obtaining a reaction solution; mixing the reaction solution with a carbon source and a reducing agent, performing a second hydrothermal reaction, separating the solid phase, and obtaining a precursor; and sintering the precursor to obtain the lithium manganese iron phosphate cathode material. During the hydrothermal reaction stage, silver ions can inhibit the rapid growth of high-energy crystal faces, ultimately exposing more high-energy crystal faces. During the sintering stage, the silver ions are reduced to a single substance to modify the carbon layer, forming a "carbon-metal" composite conductive network and improving the conductivity of the carbon layer. The preparation method is simple and convenient to operate, and can quickly and efficiently form a nanoscale lithium manganese iron phosphate cathode material with better electrical properties and a [001] crystal plane orientation, thus having good application prospects.

A method for manufacturing a semiconductor structure includes forming a plurality of semiconductor stack portions spaced apart from each other by a plurality of recesses, each of which includes two sacrificial layer portions and a channel layer portion disposed therebetween, in which the channel layer portion has a plurality of crystal planes and is formed with a first straight lateral surface which is aligned with one of the crystal planes that has a lowest etching rate for an etchant to be used for laterally etching the channel layer portion among those of the crystal planes of the channel layer portion which are able to expose to the recesses; and laterally etching the channel layer portion using the etchant to permit the channel layer portion to be formed with a second straight lateral surface.

A film structure comprises a substrate and a buffer film formed on the substrate. The substrate is a 36° to 48° rotated Y-cut Si substrate, or the substrate is a SOI substrate comprising a base substance made of the 36° to 48° rotated Y-cut Si substrate, an insulating layer on the base substance, and a SOI layer made of a Si film on the insulating layer, and a Miller index of a crystal plane of an upper surface of the SOI layer is equal to the Miller index of a crystal plane of an upper surface of the base substance. The buffer film comprises ZrO2 epitaxially grown on the substrate.

The present invention relates to an electrolytic copper foil having a preferred orientation of a (200) crystal plane, a method for manufacturing the same, and an application thereof, in which the electrolytic copper foil before heat treatment has a crystal grain orientation ratio of 20% or less in the (200) crystal plane as measured by XRD analysis, and a crystal grain orientation ratio of less than 20% in a {001} crystal plane family as measured by EBSD analysis; the electrolytic copper foil after heat treatment has a crystal grain orientation ratio in the (200) crystal plane of 50% or more as measured by XRD analysis and a crystal grain orientation ratio in the {001} family of crystal planes of 20% or more as measured by EBSD analysis. And the heat treatment is heating at 200 DEG C for two hours. The electrolytic copper foil subjected to heat treatment has a microstructure similar to that of a rolled and annealed copper foil and shows excellent mechanical properties.

This invention belongs to the field of photoelectrode material preparation technology for photoelectrode fabrication in photoelectrochemical water splitting, specifically a preferred-oriented Ta3N5 photoanode and its preparation method. This method utilizes an electron beam evaporation system and a high-temperature nitriding method to form a specifically oriented Ta3N5 inducing layer on a Nb substrate, and then achieves the orientation-continuous growth of the main Ta3N5 thin film. By adjusting the type of metal material in the inducing layer, the preferred orientation of the Ta3N5 crystal planes can be controlled, thereby achieving the regulation of the photoelectrochemical water splitting performance of the Ta3N5 thin film. This method has good structural repeatability and can be extended to the growth of different substrates and other material systems.

The invention discloses a positive electrode active material, a preparation method thereof and a battery, the positive electrode active material comprises niobium-doped lithium-rich manganese-based oxide, and the positive electrode active material comprises a first region and a second region which are sequentially and adjacently arranged in a normal direction of a {010} crystal plane family, the minimum distance between the boundary of the second region and the surface of the positive electrode active material is smaller than the minimum distance between the boundary of the first region and the surface of the positive electrode active material; the Nb concentration of the second region is greater than the Nb concentration of the first region. Therefore, the positive electrode active material has component and structure gradient distribution along the {010} crystal plane family, the structural stability of the positive electrode active material is improved, the de-intercalation and diffusion rate of lithium ions is increased, and the capacity exertion, rate capability and cycle performance of the battery are further improved.

The application relates to a preparation method of a high-index crystal face texture copper current collector of a negative-electrode-free lithium metal battery, and belongs to the technical field of negative-electrode-free lithium metal batteries. The high-index crystal face texture copper current collector is constructed through pre-pressing stress and high-temperature annealing. The copper current collector can significantly reduce interface nucleation overpotential, and enhance anion adsorption capacity to further derive an ultra-thin and inorganic grain boundary-rich SEI, increase Li + Transmission speed. The nucleation process and the interface process synergistically act to effectively inhibit dendrite growth and significantly improve interface stability, thereby endowing the negative-electrode-free lithium metal battery with stable electrochemical cycle performance.

The invention belongs to the field of energy storage materials, and particularly relates to an organic functional self-assembly material, a preparation method, an application, a modified lithium negative electrode and a lithium metal battery, and the organic functional self-assembly material is a two-dimensional rod-shaped material which is formed by self-assembly of a compound shown in a formula 1 (1) and has at least one crystal face in 020, 400 and 022. Researches show that the organic functional self-assembly material can effectively relieve the defects of dendritic crystal, unstable interface, large volume change and the like of metal lithium in the cycle process, can significantly optimize the long-range cycle performance of the metal lithium, can still obtain excellent long cycle stability under high magnification, and is suitable for preparing super fast charge metal lithium batteries.

The invention belongs to the technical field of wafer processing, and particularly relates to an organic etching solution for etching a groove of a quartz wafer and application of the organic etching solution. The organic etching liquid comprises 10%-20% of hydrogen fluoride, 20%-30% of ammonium bifluoride, 40% of pure water, 10%-12% of trisodium phosphate, 4%-8% of sodium chromate and 2% of polyethylene glycol. According to the organic etching solution prepared by the invention, the stability of the tuning fork quartz frequency chip is improved, the electrical property of the tuning fork quartz frequency chip is improved, the corrosion shape of the groove can be controlled by changing the corrosion rate of different crystal faces, and the effect of improving the performance is achieved.

Embodiments of the present invention relate to a biomass-derived porous carbon material, a preparation method therefor, and a use thereof. The biomass-derived porous carbon material is composed of graphite-like carbon microcrystallites. The biomass-derived porous carbon material has a degree of ordering η of 20000-80000, an equivalent number of atomic layers ηa of carbon atoms periodically arranged along the a-axis direction is 30-50, and a number of atomic layers ηc of carbon atoms periodically arranged along the c-axis direction is 20-40. In an X-ray diffraction pattern of the biomass-derived porous carbon material, the (002) crystal plane has a diffraction angle 2θ ranging from 24.5° to 26.2°, the graphite-like carbon microcrystallites has a carbon interlayer spacing of 0.340 nm to 0.365 nm, and the (002) crystal-plane diffraction peak has a full width at half maximum β002 of 0.5 rad to1.5 rad. In the present invention, the degree of ordering and the interlayer spacing of carbon atomic layers in the graphite‑like carbon microcrystallites enable the biomass-derived porous carbon material to have sufficient strength and electrical conductivity, so that the material does not undergo mechanical fracture or deformation during repeated charge-discharge processes, thereby effectively suppressing volume expansion of nano-silicon particles, improving the initial coulombic efficiency and rate performance of the battery, and prolonging the cycle life and service life of the battery under high-rate conditions.

A negative electrode sheet, a secondary battery, an electric device, and artificial graphite and a preparation method therefor. The negative electrode sheet comprises a negative electrode current collector and a negative electrode film layer located on at least one surface of the negative electrode current collector, wherein the negative electrode film layer comprises artificial graphite. La (110) of the artificial graphite is 130 nm-175 nm, and Lc (002) thereof is 30 nm-42 nm, wherein La (110) represents the crystallite size along an a axis in the (110) crystal plane of the artificial graphite, and Lc (002) represents the crystallite size along a c axis in the (002) crystal plane of the artificial graphite.

This invention relates to the field of ternary precursor technology, and discloses a high-nickel ternary precursor, its preparation method, and its application. A two-stage continuous process is employed. First, a precursor nucleus is prepared using a high-rotation-rate, low-ammonia-concentration, and high-pH process. Then, a shell is prepared using a low-rotation-rate, suitable-ammonia-concentration, and suitable-pH process, achieving precursor crystal growth along the ternary precursor matrix. <101> Preferential crystal plane growth and an XRD peak intensity ratio I101 / I001 > 1.2. The prepared high-nickel ternary cathode material, under 3.0–4.3V conditions with a 1.0C / 1.0C charge-discharge regime, achieved an initial discharge of 206 mAh / g and an initial coulombic efficiency > 96.0%; under 3.0–4.3V conditions with a 0.1C / 0.1C charge-discharge regime, the initial discharge reached 230 mAh / g with an initial coulombic efficiency above 92.50%, and the 1C / 0.1C capacity retention rate ≥ 89.5%, demonstrating excellent electrical performance.

The invention discloses a method for selectively exposing a specific crystal face to regulate and control the configuration of an IrRuMOx-based oxygen evolution electrocatalyst. The method comprises the following steps: acidifying and thermally treating carbon powder to prepare a carbon material hard template; slowly injecting the pre-reaction mixed solution and stirring; carrying out solvothermal reaction on the organic ligand and nitrate; drying the reaction product, grinding into powder, and carrying out heat treatment; and carrying out acid treatment and washing to obtain the IrRuMOx oxygen evolution electrocatalyst with the nanorod structure. According to the invention, a nano confinement growth environment provided by a carbon material template is utilized to limit radial growth of an IrRuM (OH) precursor in a heat treatment process; in the heat treatment process, an organic ligand is selectively adsorbed on a specific crystal face of IrRuMOx, crystal growth in the direction is effectively inhibited, a highly ordered nanostructure along the specific crystal orientation is guided to be formed, a specific active crystal face is selectively exposed, the four-electron transfer process is remarkably accelerated, and the oxygen evolution reaction activity is improved.