707 results about "Crystal plane" patented technology

The invention belongs to the technical field of crystal processing, and relates to a method for obtaining a single crystal diamond (111) surface wafer by using double-pulse-width laser. Femtosecond laser and picosecond laser are adopted for machining and stripping the blocky single crystal diamond to obtain a first crystal face (111), then femtosecond laser and picosecond laser are continuously adopted for machining and stripping the remaining blocky single crystal diamond, and the blocky single crystal diamond is obtained; the process for obtaining the crystal face (111) comprises the following steps of: scanning femtosecond laser on the crystal face (111) to process a plurality of graphitization modification lines which are full of the crystal face (111) and are parallel to each other, wherein the graphitization modification lines are parallel to the crystal orientation of a diagonal line [110] of the crystal face (001); carrying out scanning processing along the graphitization modification line by utilizing picosecond laser, so as to form a leap crack on the basis of the graphitization modification line of the crystal face (111); and then stripping is carried out. By means of the method, the wafer with the complete (111) face can be obtained through cutting in the ultra-thick (001) CVD monocrystal diamond.

The invention relates to a positive electrode active material, a preparation method, a battery monomer, a battery device and a power utilization device. The positive electrode active material comprises an inner core and a first coating layer arranged on at least part of the surface of the inner core, the inner core comprises lithium manganese iron phosphate; the first coating layer comprises lithium iron phosphate; an X-ray diffraction pattern of the positive electrode active material comprises a diffraction peak of a (020) crystal face and a diffraction peak of a (200) crystal face, the diffraction peak of the (020) crystal face and the diffraction peak of the (200) crystal face meet the condition that I (020) / I (200) is larger than or equal to 3.5, I (020) represents the intensity of the diffraction peak of the (020) crystal face, and I (200) represents the intensity of the diffraction peak of the (200) crystal face. The positive electrode active material provided by the embodiment of the invention has good lithium ion diffusion performance, and when the positive electrode active material is used for a battery, the battery can have good rate capability.

A quantum-dot-containing composition contains: either quantum dots each having a surface provided with only one equivalent crystal plane, or quantum dots each having a surface provided with two or more different equivalent crystal planes; and one selected from (A), (B), and (C) below: (A) two or more compounds; (B) one or more compounds, and single atoms formed of one or more halogens or chalcogens; and (C) single atoms formed of two or more halogens or chalcogens.

The invention provides a positive active material and a preparation method thereof, a positive plate and a battery. The positive electrode active material satisfies the following condition: # imgabs0 #, wherein I (111), I (222), I (400) and I (440) are all not 0. According to the positive electrode active material provided by the invention, the exposure degrees of the crystal face (222) and the crystal face (111) relative to the crystal face (110) and the crystal face (100) are limited by the formula 1, so that the lithium ion conduction rate and the dynamic performance of lithium nickel manganese oxide can be improved, and the rate capability and the discharge capacity of a corresponding battery can be remarkably improved.

The invention relates to a lithium-rich manganese-based positive electrode material as well as a precursor and a preparation method thereof, and belongs to the technical field of batteries. The problems that an existing lithium-rich manganese-based positive electrode material is low in ion diffusion coefficient, poor in rate capability, poor in cycle performance and the like are solved. The preparation method comprises the following steps: uniformly mixing transition metal salt, a precipitant and a complexing agent with water to obtain a transition metal salt solution, a precipitant solution and a complexing agent solution; regulating and controlling the pH value of the base solution in the reaction kettle by adopting a precipitant solution and a complexing agent solution; under the protection of inert atmosphere, liquid is fed into the reaction kettle, the nucleation-growth process of the primary particles is adjusted by dynamically adjusting the pH, temperature and stirring speed of the system, the crystal face orientation, particle size and stacking mode of the primary particles are controlled, and then the morphology of the secondary particles is regulated and controlled; after the liquid feeding is finished, aging, and carrying out suction filtration, washing and drying to obtain a precursor; the positive electrode material prepared from the precursor has rate capability and high energy density performance.

An X-ray generator is presented comprising: an electron source generating an accelerated electron beam propagating along a first propagation path with a first general propagation direction; a first crystalline structure located in the first propagation path, and defining a first crystal plane oriented at a predetermined non-zero angle with the first propagation path, and configured to transmit the electron beam therethrough and generate parametric x-ray (PXR) emission being first directional emission along a second propagation path tilted with respect to the first general propagation direction; and a second crystalline structure located in the second propagation path and configured as a monochromator with respect to the PXR emission, and defining a second crystal plane oriented at the predetermined non-zero angle with respect to the second propagation path to thereby provide second directionality for the PXR emission.

A negative electrode active material, a negative electrode sheet, a sodium ion battery, and an electrical apparatus. The negative electrode active material comprises: hard carbon, the true density ρ of the hard carbon satisfying 1.3 g / cm3≤ρ≤1.8 g / cm3; and an intercalation-type sodium storage material, the crystal plane spacing d of the intercalation-type sodium storage material satisfying 0.24 nm≤d≤0.8 nm. The negative electrode active material can effectively reduce the risk of thermal runaway of sodium ion batteries.

To provide a workpiece conveyance apparatus capable of automatically clamping a workpiece between a spindle unit (spindle pipe sleeve) and a tail unit (tail pipe sleeve) in a state in which the crystal axis of the workpiece and the rotation axis of a cylindrical grinding apparatus coincide.SOLUTION: The workpiece conveyance apparatus includes: a clamp mechanism 250 including a pair of claw sections 261a, 261b that clamps a workpiece; a turning mechanism configured to turn the clamp mechanism in a state of clamping the workpiece; and an X-ray apparatus configured to measure a crystal plane orientation of the workpiece clamped between a spindle pipe sleeve and a tail pipe sleeve of a cylindrical grinding apparatus main body in a state in which a center axis of the workpiece and a rotation axis of the cylindrical grinding apparatus main body coincide, and output a correction value for correcting a deviation amount of a crystal axis of the workpiece with respect to the rotation axis of the cylindrical grinding apparatus main body.SELECTED DRAWING: Figure 11

Disclosed are a coating, a coating composition, a secondary battery, and an electronic device, the coating composition including a melamine compound and a binder, the melamine compound including melamine cyanurate, the melamine compound simultaneously satisfying the relational expressions: 1.8 < = K1 / K2 < = 3, 0.18 < = K2 / K3 < = 0.5, and K3 > = K1 > = K2, k1 is the highest peak intensity of the 110 crystal face of the melamine compound, K2 is the peak intensity of the 200 crystal face of the melamine compound, and K3 is the peak intensity of the 202 crystal face of the melamine compound.

The invention relates to the technical field of batteries, in particular to a positive electrode material and a preparation method and application thereof. The positive electrode material comprises a core layer and a shell layer coating the surface of the core layer, the core layer comprises a high-nickel multi-metal oxide and a doping element Q, and the Q comprises at least one of Al, B, Nb, La, Sr, Sb and Mo; the shell layer comprises a nickel-containing multi-metal oxide and a doping element M, the element M comprises the element Q and a doping element D, and the doping element D is selected from at least one of B, Sb, Nb, W, Zr, Ta and Mo; the element Q is different from the element D; the element Q is uniformly distributed in the core layer and the shell layer; the doping element D is distributed in a radial concentration decreasing manner from the surface to the interior of the shell layer, and the interior of the positive electrode material is of a radial structure. The positive electrode material provided by the invention has low 003 crystal face grain size and high microstrain, can realize structure optimization and core-shell concentration difference maintenance at the same time, and improves the electrochemical performance of the positive electrode material.

The invention belongs to the technical field of lithium batteries, and discloses a lithium ion positive electrode material, a preparation method thereof and a lithium ion battery. The lithium ion positive electrode material provided by the invention comprises a lithium iron phosphate material with a carbon coating layer, the ratio Kr of the (200) crystal face size to the (101) crystal face size in an XRD spectrogram of the lithium ion positive electrode material is 0.82-1.08, and the time domain differential potential ratio K delta V of a battery prepared from the lithium ion positive electrode material is 2.21-3.2. A Kr value in an XRD (X-Ray Diffraction) spectrogram of the lithium ion positive electrode material is within a specific range value, and a time domain differential potential ratio K [delta] V of a battery prepared from the lithium ion positive electrode material is also within a specific range value; the problem that the polarization phenomenon in the material is enhanced due to the fact that lithium ions in the lithium iron phosphate material cannot migrate in time in the charging and discharging process of the battery can be effectively solved, so that the power or energy storage battery prepared by taking the lithium iron phosphate material as the positive electrode material has excellent DCR performance, and the application prospect is good.

The invention discloses a sodium ferric pyrophosphate material with a sodium storage dominant crystal face regulated and controlled by cation doping as well as a preparation method and application of the sodium ferric pyrophosphate material. The chemical formula of the prepared sodium ferric pyrophosphate material with the regulated and controlled crystal structure is Na < 4 > Fe < 2.97 > M < 0.03 > (PO4) < 2 > P < 2 > O < 7 >. Wherein M = Sr, or Sr and a second doping element, and the second doping element is selected from one of Cd, Bi, Mo, Ni and Al. The material is prepared by adopting a sol-gel method, an iron source, a chelating agent, a sodium source, a phosphorus source and doping elements are dissolved in deionized water, and stirring is performed until a gel state is formed; and drying and calcining twice to obtain a final product. The sodium ferric pyrophosphate electrode material prepared by the invention has more sodium storage dominant crystal faces, shows good electrochemical performance, has the advantages of simple preparation process, easily available raw materials and low cost, has remarkable industrial application value, and is easy for large-scale production.

The present invention provides an optical waveguide coupler (1) comprising a crystalline substrate (2) of a (100) type having a top surface (2a) and a (100) crystallographic plane (2100), wherein the crystalline substrate (2) comprises: a V-groove (3) extending in a Z-direction (Z) in a projection onto the top surface (2a), wherein the Z-direction (Z) lies within a 〈110〉 crystal plane (2110) of the crystalline substrate (2), wherein the top surface (2a) and a 〈100〉 crystal plane (2100) of the crystalline substrate (2) form a first angle (α1) in an X / Y plane (XY) perpendicular to the Z-direction (Z), and an optical waveguide arranged on the top surface (2a) of the crystalline substrate (2). (4), wherein the optical waveguide (4) extends along the Z-direction (Z) in a projection to the top side, wherein the V-groove (3) and the optical waveguide (4) are designed such that,When an optical fiber (5) having a predetermined size and a fiber core (51) and a fiber tip (52) is inserted into the V-groove (3) such that a distance between an outer end (42) of the waveguide core (4) and the fiber tip (52) is less than a predetermined distance (d), the fiber core (51) is aligned with the waveguide core (41) such that a displacement of the fiber core (51) and the waveguide core (41) is less than a predetermined displacement. Furthermore, the present invention provides a method for manufacturing an optical fiber coupler (1).

The present invention relates to the field of positive electrode materials, and provides a positive electrode material and a preparation method therefor, and a battery. The positive electrode material comprises a base material and a coating layer located on the surface of the base material. The chemical general formula of the base material is LiaNibCocMdO2, wherein 0.95≤a≤1.08, 0.3≤b≤1, 0≤c≤0.7, 0≤d≤0.2, b+c+d=1, and M is a metal element. The coating layer comprises a fast ion conductor material. In an XRD spectrum of the positive electrode material, the number of crystal planes of the positive electrode material on a crystal plane (003) is P003, the number of crystal planes of the positive electrode material on a crystal plane (104) is P104, 10≤P003≤300, 10≤P104≤400, and 0.55≤P003 / P104. According to the positive electrode material, the impedance of the positive electrode material is reduced, the transmission of lithium ions is accelerated, and the initial discharge capacity and the initial coulombic efficiency are improved.

A GaN substrate includes a main surface 1 inclined by 0° to 10° from a (0001) crystal plane which is a Ga-polar plane, and including a Si-doped GaN layer on at least a surface of the main surface 1, in which the Si-doped GaN layer has a Si concentration of 1×1018 atoms / cm3 or more, and a total of bottom areas of recessed defects on a surface of the Si-doped GaN layer is 15% or less of an area of the entire surface of the Si-doped GaN layer.

An element is disclosed. The element can include a non-conductive structure having a non-conductive bonding surface, a cavity at least partially extending through a portion of a thickness of the non-conductive structure from the non-conductive bonding surface, and a conductive pad disposed in the cavity. The cavity has a bottom side and a sidewall. The conductive pad has a bonding surface and a back side opposite the bonding surface. An average size of the grains at the bonding surface is smaller than an average size of the grains adjacent the bottom side of the cavity. The conductive pad can include a crystal structure with grains oriented along a 111 crystal plane. The element can be bonded to another element to form a bonded structure. The element and the other element can be directly bonded to one another without an intervening adhesive.

A crystal growth method and system, an apparatus, and a storage medium. The crystal growth method comprises: determining a parameter set of a crystal growth device in a target heat, wherein the parameter set comprises at least one target parameter, and the target parameter is a parameter, affecting crystal growth, in the crystal growth device; acquiring a first temperature measurement value of a first temperature measurement point of the crystal growth device in a target time period of the target heat; and on the basis of the target parameter and the first temperature measurement value, by means of a crystal plane temperature determination model, determining a simulated crystal plane temperature corresponding to the first temperature measurement value.

The embodiment of the invention provides a sodium battery positive electrode material as well as a preparation method, a precursor and application thereof. The sodium battery positive electrode material comprises a sodium-based metal oxide, an X-ray diffraction spectrum of the material comprises diffraction peaks of the following 12 crystal faces: (003), (006), (101), (012), (104), (107), (018), (110), (113), (1010), (116) and (024), and the ratio of the peak area of the diffraction peak of the crystal face (003) to the sum of the peak areas of the diffraction peaks of the 12 crystal faces is less than 25%. The positive electrode material meeting the conditions is high in particle sphericity degree and relatively round and full in structure, so that the material is relatively high in compaction density and relatively good in dynamic performance, and the energy density and the rate capability of the sodium battery are conveniently improved.

A processing method for processing a single-crystal silicon wafer that has a first surface and a second surface formed in such a manner that a specific crystal plane included in a crystal plane {100} is exposed in each of the first and second surfaces and has devices formed in the respective regions marked out by planned dividing lines in the first surface. The method includes forming dividing origins along each planned dividing line, forming a separation layer along the crystal plane of the second surface through relatively moving a focal point and the wafer along a first direction that is parallel to the crystal plane of the second surface and in which an acute angle formed between the first direction and the crystal orientation <100> is equal to or smaller than 5°, and separating the wafer into a first-surface-side wafer including devices and a second-surface-side wafer including no devices.

The present invention relates to the technical field of hard alloys. Disclosed are a binder-phase-free hard alloy, and a preparation method therefor and the use thereof. Since the content of a binder-phase metal in the binder-phase-free hard alloy as provided is less than or equal to 1 wt%, WC crystal grains are difficult to grow into a plate-shaped morphology by means of dissolution-precipitation in the binder-phase metal, and the diffusion growth rate of each crystal plane and crystal boundary of the WC crystal grains is directionally controlled by adding elements such as boron, titanium, chromium and vanadium and controlling the amounts thereof; therefore, a portion of the crystal grains is controlled to grow into a polygonal lamellar morphology, crystal grains with a polygonal lamellar morphology are prepared under the conditions of substantially no binder-phase metal being present and flattening treatment not being required for raw material powder, the toughness of the binder-phase-free hard alloy is effectively improved, and the hardness is prevented from being significantly reduced to decrease the wear resistance.

The present invention discloses a positive electrode active material, a preparation method thereof, a positive electrode sheet, a battery and an electrical device. The positive electrode active material includes a plurality of primary particles, and the equivalent number of sheet layers N of the (003) crystal plane of the positive electrode active material (003) and the equivalent number of sheet layers N of the (104) crystal plane (104) satisfy: N (003) *N (104) is 1×10 4 -3×10 4 , where D (003) is the average thickness of the positive electrode active material microcrystal in the direction perpendicular to the (003) crystal plane, with the unit of nm, and d (003) is the crystal plane spacing of the (003) crystal plane in the positive electrode active material microcrystal, with the unit of nm, D (104) is the average thickness of the positive electrode active material microcrystal in the direction perpendicular to the (104) crystal plane, with the unit of nm, and d (104) is the crystal plane spacing of the (104) crystal plane in the positive electrode active material microcrystal, with the unit of nm. Thus, by using this positive electrode active material, the battery loaded with it can take into account high energy density, cycle performance, rate performance and safety performance.

The present invention is a substrate for a high-frequency device in which a nitride semiconductor film is formed on an SOI substrate, the SOI substrate being a TRSOI substrate in which a trap-rich layer formed on a base substrate and an SOI layer comprising single crystal silicon are bonded with an oxide film interposed therebetween, the SOI layer having a resistivity of 1 k [omega] * cm or more and a crystal plane orientation of (111). And the oxygen concentration is 14.8 ppma or less. As a result, a substrate for a high-frequency device having excellent high-frequency characteristics and a method for manufacturing the same are provided.

The invention belongs to the technical field of testing. The invention provides a method for non-destructively testing the relative dielectric constant of a piezoelectric material, which is characterized in that different crystal faces (orientation distribution) contributing to the relative dielectric constant in the piezoelectric material are obtained by means of X-ray diffraction, and the relative dielectric constant of the piezoelectric material is measured by taking the diffraction peak intensity proportions of the crystal faces as weights. And calculating the weighted average of the theoretical dielectric constants of the crystal faces to obtain the relative dielectric constant of the piezoelectric material. According to the method, the test speed is high, an electrode does not need to be prepared, each test point can be completed within 1 min as soon as possible, the piezoelectric material is not damaged or polluted, meanwhile, the relative dielectric constants at different positions on the whole piezoelectric wafer can be conveniently tested, and then the distribution uniformity of the relative dielectric constants in the plane is evaluated.

The invention discloses zirconia ceramic powder, a preparation method thereof and a zirconia sintered body, and relates to the technical field of zirconia. The zirconia ceramic powder comprises a solid solution formed by zirconia and a stabilizer, the specific surface area of the zirconia ceramic powder is 10-32 m < 2 > / g, the average particle size D50 is 0.1-0.3 [mu] m, the average particle size D90 is 0.2-0.5 [mu] m, and the peak intensity ratio of the crystal grain 220 crystal face / 200 crystal face of the zirconia ceramic powder obtained through powder X-ray diffraction measurement is 1.2-2.5. The zirconia ceramic powder in which the average crystallite diameter # imgabs0 # of the grains obtained from the (-111) plane peak of the grains of the zirconia ceramic powder in X-ray diffraction measurement satisfies the numerical range has a specific crystal plane orientation, so that low-temperature sintering can be realized without adding a sintering aid. And a sintered body having high strength and high sintering density can be obtained.

The present invention provides a planar silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) device and a manufacturing method therefor. Some shallow trenches are arranged based on that a channel current is still parallel to a (0001) crystal plane of a SiC crystal, to further effectively use a crystal plane having a high channel mobility, for example, a (1120) crystal plane, a (1100) crystal plane, or a (0338) crystal plane, of the SiC crystal, thereby effectively reducing channel resistance of the planar SiC MOSFET device. In addition, source regions, well regions, and a channel are formed without protection from an additional ion implanted layer (IMP layer), leading to simple processes.

The invention discloses a silver particle modified and carbon coated lithium manganese iron phosphate positive electrode material and a preparation method thereof, and relates to the technical field of materials.The preparation method comprises the steps that a lithium source, an iron source, a manganese source and a phosphorus source are mixed and dissolved, and a mixed solution is obtained; adding a silver ion solution into the mixed solution, and carrying out a first hydrothermal reaction to obtain a reaction solution; mixing the reaction liquid with a carbon source and a reducing agent, carrying out a second hydrothermal reaction, and separating a solid phase to obtain a precursor; and sintering the precursor to obtain the lithium iron manganese phosphate positive electrode material. In the hydrothermal reaction stage, silver ions can inhibit rapid growth of high-energy crystal faces, and finally more high-energy crystal faces are exposed. And in the sintering stage, silver ions are reduced into simple substances to modify the carbon layer, a carbon-metal composite conductive network is formed, and the conductivity of the carbon layer is improved. The preparation method is simple and convenient to operate, can quickly and efficiently form the nanoscale lithium manganese iron phosphate positive electrode material with relatively good electrical properties and [001] crystal face orientation, and has a relatively good application prospect.

The invention provides a secondary battery, an electric device, artificial graphite and a preparation method thereof. The secondary battery comprises a negative electrode piece, the negative electrode piece comprises a negative electrode current collector and a negative electrode film layer located on at least one surface of the negative electrode current collector, the negative electrode film layer comprises artificial graphite, the artificial graphite comprises a surface part and a central part, the surface part is continuously or discontinuously distributed in the central part, the interplanar spacing D002 of the surface part is larger than the interplanar spacing D002 of the central part, and the interplanar spacing D002 of the surface part is larger than the interplanar spacing D002 of the central part. And the interplanar spacing D002 is the interlayer spacing of the graphite 002 crystal face. The secondary battery of the negative pole piece has improved first coulombic efficiency and storage performance.

The present application discloses a positive electrode active material and a preparation method therefor, a positive electrode sheet, a battery, and an electrical device. The positive electrode active material comprises a sodium manganese oxide; the sodium manganese oxide comprises a first phase and a second phase; the first phase comprises first sodium ion layers and first transition metal layers which are sequentially alternated, and the second phase comprises second sodium ion layers and second transition metal layers which are sequentially alternated; and the interlayer spacing of the adjacent first transition metal layers in the first phase in a direction perpendicular to a crystal plane (001) is d1, and the interlayer spacing of the adjacent second transition metal layers in the direction perpendicular to the crystal plane (001) is d2, wherein d1-d2 ranges from 0.01 nm to 0.02 nm.

To provide a novel method for detecting dislocation that is present in a single crystal silicon specimen after a coating is formed thereto.SOLUTION: A method for detecting dislocation of a single crystal silicon specimen includes a step of detecting a part as dislocation that is observed as a bright line in an electronic channeling image that is acquired by irradiating a surface of a single crystal silicon specimen with an electron beam by a scanning electron microscope, where the irradiation with the electron beam includes a step of irradiating one or more crystal planes of the single crystal silicon specimen with the electron beam in an incidence azimuth within a range of satisfying an electronic channeling condition and the one or more crystal planes include a {220} surface.SELECTED DRAWING: None

The invention discloses a zinc negative electrode and a preparation method and application thereof.The preparation method comprises the steps that zinc salt, aluminum salt, manganese salt, a complexing agent and water are mixed, an electroplating solution is obtained, and the complexing agent is formamide; and carrying out electro-deposition on the electroplating liquid on the surface of a base material to obtain a zinc metal coating, namely the zinc negative electrode. The preferred orientation of the zinc metal (002) crystal face is realized through a simple electro-deposition process, and the monocrystal-like zinc negative electrode with the highly-oriented (002) crystal face is obtained in one step, is used as a reaction surface of an aqueous zinc metal battery and has excellent electrochemical performance.