217 results about "Crystal plane" patented technology

This invention provides a method for preparing (002) crystal-plane oriented metallic zinc and its application. The invention employs a two-electrode electrochemical deposition technique, using iron foil, titanium foil, or copper foil as the working electrode, commercial zinc foil as the counter electrode, and an aqueous zinc salt solution as the electrolyte. Constant current density discharge deposition is used to deposit (002) crystal-plane oriented metallic zinc on the working electrode; the constant current density is 50 mA cm⁻¹. ‑2 ~200 mA cm ‑2 The (002) crystal-plane oriented metallic zinc prepared by this invention can be used in rechargeable zinc-ion batteries. The two-electrode electrolytic cell device used in the preparation of metallic zinc in this invention is simple, the preparation process is straightforward, and the preparation method is more universal. The (002) crystal-plane oriented metallic zinc prepared according to the method of this invention can suppress zinc dendrite growth and hydrogen evolution, thereby improving the service life of rechargeable zinc-ion batteries.

This invention discloses an ultra-low roughness chemical silver plating solution for 6G communication, comprising 2-5 g / L silver nitrate, 10-15 g / L complexing agent, 5-8 g / L nicotinic acid, 2-5 g / L reducing agent, 1-3 g / L stabilizer, 0.1-0.5 g / L surfactant, 10-30 g / L pH adjuster, 0.01-0.1 g / L grain refiner, 0.1-0.5 g / L antioxidant, and water. The invention also provides a method for its preparation. Compared with existing technologies, this invention uses specific halogenated compounds to modify uracil, improving its defects and making it less prone to ionization. The introduced groups also impart crystal plane guiding function, thereby achieving an ultra-low surface roughness of the plating layer.

This invention provides a method for growing single crystals of group III nitrides that can improve crystal quality. [Solution] A method for growing a group III nitride single crystal, comprising: an initial nucleation step S1 in which a seed substrate having a plurality of seed crystals made of group III nitride single crystals formed on its upper surface is immersed in a mixed molten liquid stored in a crucible to form a plurality of initial nuclei; a planarization step S2 in which the seed substrate is repeatedly immersed in the mixed molten liquid and then lifted out, and heated in a nitrogen atmosphere to fill the spaces between adjacent initial nuclei with group III nitride single crystals and flatten the crystal plane; and a thickening step S3 in which the seed substrate having the flattened crystal plane is immersed in a mixed molten liquid stored in a crucible to form a thickened group III nitride single crystal on the seed substrate, wherein in the initial nucleation step S1, the mixed molten liquid does not contain alkali metals and alkaline earth metals other than Na, and in the thickening step S3, the mixed molten liquid contains alkali metals or alkaline earth metals other than Na.

A coated member of the present invention includes a substrate and a hard coating film that is formed on the surface of the substrate and includes a nitride or carbonitride of a metal element. A content of Al is 65 atom % or more and 85 atom % or less, a content of Cr is 15 atom % or more and 35 atom % or less, and a total content of Al and Cr is 90 atom % or more and 100 atom % or less in a total amount of the metal element and metalloid element contained in the hard coating film, and in an intensity profile obtained from a selected area diffraction pattern of a transmission electron microscope, a crystal plane exhibiting a maximum peak intensity is different between a vicinity of the substrate and a vicinity of the surface, in the vicinity of the substrate, a peak corresponding to a (111) plane or a (200) plane of a face-centered cubic lattice structure exhibits a maximum intensity, and in the vicinity of the surface, a peak intensity corresponding to a (220) plane is 0.6 times or more a larger one of a peak intensity corresponding to the (200) plane and a peak intensity corresponding to the (111) plane of the face-centered cubic lattice structure.

Semiconductor substrate of a nitride of a group III element, comprising: a first surface; and a second surface where the distortion of a crystal plane of the first surface exhibits a multitude of extremes.

The invention provides a multilayer ceramic capacitor and a method of manufacturing the same. The multilayer ceramic capacitor includes: a capacitor body including a dielectric layer and an inner electrode layer; and an outer electrode disposed on an outer surface of the capacitor body, in which the inner electrode layer includes nickel (Ni), and a space lattice side length of the nickel (Ni) obtained according to Formula 1 by X-ray diffraction (XRD) analysis on the inner electrode layer is about to about [Formula 1] in Formula 1, lambda is a wavelength of a Cu K alpha ray, values of lambda are h, k and l are crystal plane indexes, and theta is a Bragg angle.

A method for manufacturing a semiconductor structure includes forming a plurality of semiconductor stack portions spaced apart from each other by a plurality of recesses, each of which includes two sacrificial layer portions and a channel layer portion disposed therebetween, in which the channel layer portion has a plurality of crystal planes and is formed with a first straight lateral surface which is aligned with one of the crystal planes that has a lowest etching rate for an etchant to be used for laterally etching the channel layer portion among those of the crystal planes of the channel layer portion which are able to expose to the recesses; and laterally etching the channel layer portion using the etchant to permit the channel layer portion to be formed with a second straight lateral surface.

A film structure comprises a substrate and a buffer film formed on the substrate. The substrate is a 36° to 48° rotated Y-cut Si substrate, or the substrate is a SOI substrate comprising a base substance made of the 36° to 48° rotated Y-cut Si substrate, an insulating layer on the base substance, and a SOI layer made of a Si film on the insulating layer, and a Miller index of a crystal plane of an upper surface of the SOI layer is equal to the Miller index of a crystal plane of an upper surface of the base substance. The buffer film comprises ZrO2 epitaxially grown on the substrate.

This invention belongs to the field of photoelectrode material preparation technology for photoelectrode fabrication in photoelectrochemical water splitting, specifically a preferred-oriented Ta3N5 photoanode and its preparation method. This method utilizes an electron beam evaporation system and a high-temperature nitriding method to form a specifically oriented Ta3N5 inducing layer on a Nb substrate, and then achieves the orientation-continuous growth of the main Ta3N5 thin film. By adjusting the type of metal material in the inducing layer, the preferred orientation of the Ta3N5 crystal planes can be controlled, thereby achieving the regulation of the photoelectrochemical water splitting performance of the Ta3N5 thin film. This method has good structural repeatability and can be extended to the growth of different substrates and other material systems.

The invention discloses a positive electrode active material, a preparation method thereof and a battery, the positive electrode active material comprises niobium-doped lithium-rich manganese-based oxide, and the positive electrode active material comprises a first region and a second region which are sequentially and adjacently arranged in a normal direction of a {010} crystal plane family, the minimum distance between the boundary of the second region and the surface of the positive electrode active material is smaller than the minimum distance between the boundary of the first region and the surface of the positive electrode active material; the Nb concentration of the second region is greater than the Nb concentration of the first region. Therefore, the positive electrode active material has component and structure gradient distribution along the {010} crystal plane family, the structural stability of the positive electrode active material is improved, the de-intercalation and diffusion rate of lithium ions is increased, and the capacity exertion, rate capability and cycle performance of the battery are further improved.

The application relates to a preparation method of a high-index crystal face texture copper current collector of a negative-electrode-free lithium metal battery, and belongs to the technical field of negative-electrode-free lithium metal batteries. The high-index crystal face texture copper current collector is constructed through pre-pressing stress and high-temperature annealing. The copper current collector can significantly reduce interface nucleation overpotential, and enhance anion adsorption capacity to further derive an ultra-thin and inorganic grain boundary-rich SEI, increase Li + Transmission speed. The nucleation process and the interface process synergistically act to effectively inhibit dendrite growth and significantly improve interface stability, thereby endowing the negative-electrode-free lithium metal battery with stable electrochemical cycle performance.

The invention belongs to the field of energy storage materials, and particularly relates to an organic functional self-assembly material, a preparation method, an application, a modified lithium negative electrode and a lithium metal battery, and the organic functional self-assembly material is a two-dimensional rod-shaped material which is formed by self-assembly of a compound shown in a formula 1 (1) and has at least one crystal face in 020, 400 and 022. Researches show that the organic functional self-assembly material can effectively relieve the defects of dendritic crystal, unstable interface, large volume change and the like of metal lithium in the cycle process, can significantly optimize the long-range cycle performance of the metal lithium, can still obtain excellent long cycle stability under high magnification, and is suitable for preparing super fast charge metal lithium batteries.

Embodiments of the present invention relate to a biomass-derived porous carbon material, a preparation method therefor, and a use thereof. The biomass-derived porous carbon material is composed of graphite-like carbon microcrystallites. The biomass-derived porous carbon material has a degree of ordering η of 20000-80000, an equivalent number of atomic layers ηa of carbon atoms periodically arranged along the a-axis direction is 30-50, and a number of atomic layers ηc of carbon atoms periodically arranged along the c-axis direction is 20-40. In an X-ray diffraction pattern of the biomass-derived porous carbon material, the (002) crystal plane has a diffraction angle 2θ ranging from 24.5° to 26.2°, the graphite-like carbon microcrystallites has a carbon interlayer spacing of 0.340 nm to 0.365 nm, and the (002) crystal-plane diffraction peak has a full width at half maximum β002 of 0.5 rad to1.5 rad. In the present invention, the degree of ordering and the interlayer spacing of carbon atomic layers in the graphite‑like carbon microcrystallites enable the biomass-derived porous carbon material to have sufficient strength and electrical conductivity, so that the material does not undergo mechanical fracture or deformation during repeated charge-discharge processes, thereby effectively suppressing volume expansion of nano-silicon particles, improving the initial coulombic efficiency and rate performance of the battery, and prolonging the cycle life and service life of the battery under high-rate conditions.

A negative electrode sheet, a secondary battery, an electric device, and artificial graphite and a preparation method therefor. The negative electrode sheet comprises a negative electrode current collector and a negative electrode film layer located on at least one surface of the negative electrode current collector, wherein the negative electrode film layer comprises artificial graphite. La (110) of the artificial graphite is 130 nm-175 nm, and Lc (002) thereof is 30 nm-42 nm, wherein La (110) represents the crystallite size along an a axis in the (110) crystal plane of the artificial graphite, and Lc (002) represents the crystallite size along a c axis in the (002) crystal plane of the artificial graphite.

This invention relates to the field of ternary precursor technology, and discloses a high-nickel ternary precursor, its preparation method, and its application. A two-stage continuous process is employed. First, a precursor nucleus is prepared using a high-rotation-rate, low-ammonia-concentration, and high-pH process. Then, a shell is prepared using a low-rotation-rate, suitable-ammonia-concentration, and suitable-pH process, achieving precursor crystal growth along the ternary precursor matrix. <101> Preferential crystal plane growth and an XRD peak intensity ratio I101 / I001 > 1.2. The prepared high-nickel ternary cathode material, under 3.0–4.3V conditions with a 1.0C / 1.0C charge-discharge regime, achieved an initial discharge of 206 mAh / g and an initial coulombic efficiency > 96.0%; under 3.0–4.3V conditions with a 0.1C / 0.1C charge-discharge regime, the initial discharge reached 230 mAh / g with an initial coulombic efficiency above 92.50%, and the 1C / 0.1C capacity retention rate ≥ 89.5%, demonstrating excellent electrical performance.

A cathode material, its preparation method, and a lithium-ion battery are disclosed, belonging to the field of secondary batteries. The cathode material includes a lithium manganese iron phosphate core and a carbon coating covering at least a portion of the surface of the lithium manganese iron phosphate core. The sphericity of the cathode material is ≥0.9, and the particle size distribution is 1≤Span≤3. In the XRD pattern of the cathode material, the intensity ratio of the diffraction peaks of the (020) crystal plane to that of the (200) crystal plane is I. (020) / I (200) ≥2.8, the grain size D calculated from the (020) crystal plane diffraction peak. （020） The wavelength ranges from 100nm to 210nm. These cathode materials can improve the rate performance of lithium-ion batteries.

The invention provides a lithium ion secondary battery, a carbon material, a preparation method and an electric device. The lithium ion secondary battery comprises a negative electrode piece, the negative electrode piece comprises a negative electrode current collector and a negative electrode active layer located on at least one surface of the negative electrode current collector, a negative electrode active material of the negative electrode active layer comprises a carbon material, and the interlayer spacing d002 of the (002) crystal face of the carbon material is larger than or equal to 0.3368 nm. Stripe-shaped gaps are formed in particles of the carbon material, and the length density of the strip-shaped gaps is smaller than or equal to 0.05 mu m / mu m < 2 >.

The present invention relates to a nitride semiconductor device formed on a diamond substrate and a method for manufacturing a nitride semiconductor device, and more specifically, to a method for manufacturing a nitride semiconductor device formed on a diamond substrate in which twinning defects in a diamond layer formed on the substrate are prevented depending on the type of substrate and the orientation of the crystal plane, and by forming a single-crystal nitride semiconductor device alone on the diamond layer or forming a single-crystal nitride semiconductor device and a diamond semiconductor device simultaneously, the nitride semiconductor device and the nitride semiconductor device have high voltage, high frequency, and radiation resistance characteristics and improved heat dissipation performance.

This invention provides a GaN crystal that can be used as a substrate in nitride semiconductor devices with lateral device structures such as GaN-HEMT; and a GaN substrate that can be used in the fabrication of nitride semiconductor devices with lateral device structures such as GaN-HEMT. The GaN crystal has a 5cm² diameter. 2 The surfaces with an inclination of less than 10 degrees relative to the (0001) crystal plane have a Mn concentration of 1.0 × 10⁻⁶. 16 atoms / cm 3 Above and less than 1.0 × 10 19 atoms / cm 3 The total donor impurity concentration is less than 5.0 × 10⁻⁶. 16 atoms / cm 3 .

This application discloses a method for testing the orientation of the main reference plane of a silicon carbide crystal. The method includes: 1) selecting the (11-28) crystal plane as the reference plane and calculating the Bragg diffraction angle θ of the crystal plane; 2) adjusting the X-ray orientation system, selecting a normal so that the intersection of the incident ray and the reflected ray emitted by the orientation system is focused on the center point of the top surface of the silicon carbide crystal; the angle between the incident ray and the (11-28) crystal plane and the angle between the reflected ray and the (11-28) crystal plane are both θ, the plane containing the incident ray and the reflected ray is parallel to the (1-100) crystal plane of the silicon carbide crystal, and the X-ray orientation system displays a first signal intensity value; 3) then rotating the test stage, when the signal intensity value displayed by the X-ray orientation system is the largest relative to the first signal intensity value, the angle of rotation of the test stage is the deviation value of the orientation of the main reference plane of the silicon carbide crystal. This method is applicable to silicon carbide crystals of different thicknesses, filling the gap in testing silicon carbide substrates and broadening the detection range.

This invention discloses a method for preparing a modified electrolyte for zinc-ion batteries and its application. The preparation method includes: dissolving zinc trifluoromethanesulfonate in deionized water, subjecting it to ultrasonic treatment and stirring at room temperature, adding allantoin and acetylurea, and stirring evenly in a 50°C water bath to obtain a clear and transparent modified electrolyte. This invention utilizes allantoin to construct a stable solid electrolyte interface layer on the zinc anode surface, physically blocking water molecules and inducing zinc ions to deposit oriented along the (002) crystal plane. Simultaneously, the weak coordination of acetylurea lowers the desolvation energy barrier of zinc ions, accelerating interfacial ion conduction. The synergistic effect of these two factors results in an electrolyte with high ionic conductivity, low deposition overpotential, and significantly inhibited dendrite growth, greatly improving the cycle stability and rate performance of zinc-ion batteries. This invention features a simple preparation process, controllable cost, and is suitable for large-scale applications of aqueous zinc-ion batteries.

This application relates to a negative electrode material and a battery. The negative electrode material includes a carbon matrix and an active material, with at least a portion of the active material distributed in the carbon matrix. The negative electrode material is tested by X-ray diffraction, and the crystallite size of the carbon matrix in the a-axis direction is calculated as La, the crystallite size in the c-axis direction is Lc, and the interlayer spacing of the carbon matrix on the (002) crystal plane is d. 002 The crystallinity of the carbon matrix is ​​α, where α = (La + Lc) / (La - Lc) * d 002 1.5 < α ≤ 10. The negative electrode material and battery provided in this application can improve the cycle stability and fast charging performance of the negative electrode material.

To provide a laminate comprising a paper substrate and an aluminum vapor-deposited layer, which can suppress the deterioration of water vapor barrier properties over a long period of time, and a packaging bag containing the same. [Solution] A laminate having a structure in which at least a paper substrate, a first resin layer, an aluminum vapor-deposited layer, and a second resin layer are laminated in this order, wherein the thickness of the aluminum vapor-deposited layer is greater than 100 nm, and the full width at half maximum of the peak of the (111) crystal plane of aluminum in the X-ray diffraction measurement of the aluminum vapor-deposited layer is 2.0° or more and 14.0° or less.

This invention discloses a single-crystal diamond and its preparation method, relating to the field of inorganic materials. In preparing the single-crystal diamond, a seed crystal with a (100) crystal plane is selected, polished, and then etched to obtain a pretreated seed crystal. A single-crystal diamond base layer is grown on the surface of the pretreated seed crystal to obtain a diamond with a base layer. The diamond with the base layer is cut, grown in a nitrogen-containing environment, annealed, and finally coated with silicon to obtain the single-crystal diamond. The single-crystal diamond obtained by this invention can provide a clean and regular "starting point" for growth by pre-removing the edge regions with poor initial growth quality, fundamentally avoiding the problem of polycrystalline diamonds starting from the original edge and rapidly enveloping the surface, thereby effectively suppressing edge parasitic deposition. Simultaneously, nitrogen doping and finally silicon coating on the surface result in superior electrical properties.

Provided is an yttrium oxide film having Vickers hardness of 900 HV or more, in which the half width determined by X-ray diffractometry of the (222) plane of an yttrium oxide crystal is 0.7° or more, the (222) plane is preferentially oriented in a crystal structure of yttrium oxide, and the diffraction intensity of the (222) plane in X-ray diffractometry is twice or more those of other crystal planes. The yttrium oxide film can be formed on the surface of a component for which corrosion resistance, wear resistance, dust generation resistance, etc. are required, and is formed by any one of a PVD method, a CVD method, or an ALD method, particularly by an ion beam assisted vapor deposition method.

This transistor comprises a single-crystal silicon film, a gate insulating film on the single-crystal silicon film, a gate electrode on the gate insulating film, an interlayer insulating film on the gate electrode, and a pair of terminals. The single-crystal silicon film is positioned on an amorphous glass substrate and has a (100) crystal plane. The pair of terminals are located on the interlayer insulating film and electrically connected to the single-crystal silicon film. The length direction of the channel of the transistor is inclined at an angle of more than 0° and no more than 45° from the [001] crystal axis or the [010] crystal axis of the single-crystal silicon film.

This invention relates to a biomass porous carbon material, its preparation method, and its application. The biomass porous carbon material is composed of graphite-like carbon microcrystals; wherein the degree of order η of the biomass porous carbon material is 20000-80000, and the equivalent number of atomic layers η of carbon atoms periodically arranged along the a-axis direction is... a The number of atomic layers η, where carbon atoms are periodically arranged along the c-axis, is 30-50. c The range of the diffraction angle 2θ of the (002) crystal plane is 24.5°–26.2°, and the carbon interlayer spacing of the graphite-like carbon microcrystals is 0.340 nm–0.365 nm. The full width at half maximum (FWHM) of the (002) crystal plane diffraction peak is β. 002 The range is 0.5 rad to 1.5 rad. The ordered nature of the biomass porous carbon material and the interlayer spacing of the graphite-like carbon microcrystalline carbon atoms in this invention give it sufficient strength and conductivity. It will not undergo mechanical breakage or deformation during repeated charge and discharge, which can effectively suppress the volume expansion of nano-silicon particles, improve the first-cycle coulombic efficiency and rate performance of the battery, and extend the cycle life and service life of the battery at high rates.

Provided is a Si substrate manufacturing method capable of efficiently manufacturing a Si substrate from a Si ingot. The Si substrate manufacturing method includes: a separation band forming step of positioning a condensing point of laser light of a wavelength that is transmissive to Si at a depth from a flat surface of the Si ingot that corresponds to the thickness of the Si substrate to be manufactured, forming a separation band while relatively moving the condensing point and the Si ingot in a direction <110> parallel to an intersection line of a crystal plane {100} and a crystal plane {111} or a direction [110] orthogonal to the intersection line, and irradiating the Si ingot with the laser light; and an indexing feed step of relatively indexing feeding the condensing point and the Si ingot in a direction orthogonal to the direction in which the separation band is formed.

The present application relates to the technical field of electron microscope image analysis, and particularly relates to a transmission electron microscope micro-area diffraction crystal direction analysis method combined with a graph neural network, comprising: pre-processing a diffraction image, extracting a spot and converting it into a reciprocal space vector node; verifying the sum of any three node vectors and a deviation, establishing a connection edge if the deviation is within a threshold value, and constructing a constraint topological graph; inputting the constraint topological graph into a graph neural network, calculating edge weights and aggregating information according to neighbor node strength and reciprocal space vectors, and outputting each node crystal plane index prediction; reconstructing a theoretical reciprocal space vector based on the prediction result, calculating an overall error, and if the error is out of limit, iteratively adjusting parameters until a requirement is met or a maximum number of times is reached, and outputting a final result, and outputting a final crystal direction analysis result. The present application introduces crystallography priori through a constraint topological graph, combines with a graph neural network iterative optimization, and improves the crystal direction analysis accuracy and robustness of a complex diffraction pattern.

This invention relates to the field of semiconductor materials, specifically to an aluminum nitride thin film with different crystal orientations, its preparation method, and its applications. The invention provides a method for preparing aluminum nitride thin films with different crystal orientations, comprising the following steps: S1, selecting a single-crystal substrate with a corresponding crystal orientation according to the crystal orientation requirements of the target aluminum nitride thin film; S2, annealing the single-crystal substrate and introducing a nitrogen ion source to activate the surface of the single-crystal substrate by ion bombardment; S3, performing pre-bombardment and thin film deposition using pulsed laser deposition, and obtaining an aluminum nitride thin film with the target crystal orientation by controlling the growth temperature and growth gas pressure. This invention provides a universal, efficient, and controllable solution by organically combining three steps: "substrate crystal orientation selection - surface activation modification - synergistic control of growth parameters," successfully achieving high-quality and controllable preparation of aluminum nitride thin films with multiple crystal orientations on a single-pulse laser deposition platform.