3027 results about "Optically active" patented technology

A method and apparatus for performing refractive index, birefringence and optical activity measurements of a material such as a solid, liquid, gas or thin film is disclosed. The method and apparatus can also be used to measure the properties of a reflecting surface. The disclosed apparatus has an optical ring-resonator in the form of a fiber-loop resonator, or a race-track resonator, or any waveguide-ring or other structure with a closed optical path that constitutes a cavity. A sample is introduced into the optical path of the resonator such that the light in the resonator is transmitted through the sample and relative and/or absolute shifts of the resonance frequencies or changes of the characteristics of the transmission spectrum are observed. A change in the transfer characteristics of the resonant ring, such as a shift of the resonance frequency, is related to a sample's refractive index (refractive indices) and/or change thereof. In the case of birefringence measurements, rings that have modes with two (quasi)-orthogonal (linear or circular) polarization states are used to observe the relative shifts of the resonance frequencies. A reflecting surface may be introduced in a ring resonator. The reflecting surface can be raster-scanned for the purpose of height-profiling surface features. A surface plasmon resonance may be excited and phase changes of resonant light due to binding of analytes to the reflecting surface can be determined in the frequency domain.

An exemplary system and method for providing a vertically integrated photosensing element suitably adapted for use in CMOS imaging applications is disclosed as comprising inter alia: a processed CMOS layer (420); and a photosensing element (380) fabricated in a vertically integrated optically active layer (320, 350), where the optically active layer (320, 350) is bonded to the CMOS layer (420) and the optically active layer (320, 350) is positioned near a metalization surface (405) of the CMOS layer (420). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize photosensing performance or other material characteristics. Exemplary embodiments of the present invention representatively provide for integrated photosensing components that may be readily incorporated with existing technologies for the improvement of CMOS imaging, device package form factors, weights and/or other manufacturing, device or material performance metrics.

A hybrid laser for generating radiation includes an optical passive material and an optical active material. The laser includes a first optical waveguide and optical laser components with reflectors in the optical passive material. The first optical waveguide is adapted for coupling out radiation from the hybrid laser. The laser also includes a second optical waveguide defined in the optical active material. The optical laser components include reflectors defining a cavity and furthermore are adapted for providing laser cavity confinement in the first optical waveguide and the second optical waveguide. The second optical waveguide thereby is positioned at least partly over the first optical waveguide so that an evanescent coupling interface is defined between the second optical waveguide and the first optical waveguide and the evanescent coupling interface is positioned within the laser cavity.

Optoelectronic devices are provided that incorporate quantum dots as the electroluminescent layer in an inorganic wide-bandgap heterostructure. The quantum dots serve as the optically active component of the device and, in multilayer quantum dot embodiments, facilitate nanoscale epitaxial lateral overgrowth (NELOG) in heterostructures having non-lattice matched substrates. The quantum dots in such devices will be electrically pumped and exhibit electroluminescence, as opposed to being optically pumped and exhibiting photoluminescence. There is no inherent “Stokes loss” in electroluminescence thus the devices of the present invention have potentially higher efficiency than optically pumped quantum dot devices. Devices resulting from the present invention are capable of providing deep green visible light, as well as, any other color in the visible spectrum, including white light by blending different sizes and compositions of the dots and controlling manufacturing processes.

An optical apparatus includes a first membrane, a second membrane and at least one electromagnetically displaceable component. The first membrane includes an optically active area. The first membrane and the second membrane are coupled by a filler material disposed in a reservoir. At least one electromagnetically displaceable component is coupled to the filler material via the second membrane, such that a displacement of the at least one electromagnetically displaceable component is operative to cause a deformation of the optically active area of the first membrane by movement of the filler material.

A method for forming a nanowhisker of, e.g., a III-V semiconductor material on a silicon substrate, comprises: preparing a surface of the silicon substrate with measures including passivating the substrate surface by HF etching, so that the substrate surface is essentially atomically flat. Catalytic particles on the substrate surface are deposited from an aerosol; the substrate is annealed; and gases for a MOVPE process are introduced into the atmosphere surrounding the substrate, so that nanowhiskers are grown by the VLS mechanism. In the grown nanowhisker, the crystal directions of the substrate are transferred to the epitaxial crystal planes at the base of the nanowhisker and adjacent the substrate surface. A segment of an optically active material may be formed within the nanowhisker and bounded by heterojunctions so as to create a quantum well wherein the height of the quantum well is much greater than the thermal energy at room temperature, whereby the luminescence properties of the segment remain constant without quenching from cryogenic temperatures up to room temperature.

A covered chip having an optical element integrated in the cover is provided which includes a chip having a front surface, an optically active circuit area, and bond pads disposed at the front surface. The chip is covered by an at least partially optically translucent or transparent unitary cover that is mounted to the front surface of the chip, and has at least one optical element integrated in the unitary cover. The cover is further aligned with the optically active circuit area and vertically spaced from the optically active circuit area.

Systems and methods for modulating light with light in high index contrast waveguides clad with graphene. Graphene exhibits a large nonlinear electro-optic constant χ³. Waveguides fabricated on SOI wafers and clad with graphene are described. Systems and methods for modulating light with light are discussed. Optical logic gates are described. Waveguides having closed loop structures such as rings and ovals, Mach-Zehnder interferometer, grating, and Fabry-Perot configurations, are described. Optical signal processing methods, including optical modulation at Terahertz frequencies, are disclosed. Optical detectors are described. Microelectromechanical and nanoelectromechanical systems using graphene on silicon substrates are described.

An exemplary system and method for providing an integrated photosensing element suitably adapted for use in CMOS imaging applications is disclosed as comprising inter alia: a processed CMOS host wafer (460) bonded with a monocrystalline, optically active donor wafer (300); a photosensing element (390) integrated in said optically active donor wafer (300) having an interconnect via (505, 495, 485) substantially decoupled from the photosensing element (390), wherein the host (460) and donor (300) wafers are bonded through the optically active material in a region disposed near a metalization surface (450, 455, 445) of the CMOS layer (460) in order to allow fabrication of the interconnect (505, 495, 485). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize photosensing performance or other material characteristics. Exemplary embodiments of the present invention representatively provide for integrated photosensing components that may be readily incorporated with existing technologies for the improvement of CMOS imaging, device package form factors, weights and/or other manufacturing, device or material performance metrics.

A polarization-modulating optical element (1) consisting of an optically active crystal material has a thickness profile where the thickness, as measured in the direction of the optical axis, varies over the area of the optical element. The polarization-modulating optical element (1) has the effect that the plane of oscillation of a first linearly polarized light ray and the plane of oscillation of a second linearly polarized light ray are rotated, respectively, by a first angle of rotation and a second angle of rotation, with the first angle of rotation and the second angle of rotation being different from each other.

A packaging apparatus for optical interconnection on an optical PCB includes a first substrate with a via hole formed therethrough and in which an optical waveguide is formed, an optical interconnection block having a reflective plane on its lower end inserted into the via hole, a second substrate flip-bonded to an upper surface of the first substrate, and an optically active element flip-bonded to a lower surface of the second substrate and aligned for optical communication.

Systems and method of displaying images of entire scenes in apparent three dimensions. A projector projects images with light onto a multi-layered composite transparent sheet polarizing screen. The dimensions of the screen whose optically active layers are determined by the intensity and the mixture of polarization states of the projected light. The images appear to be three dimensional. A bead layer of the screen contains beads on the order of a wavelength of visible light.

The invention relates to an optical device including a passive high confinement waveguide, such as of silicon-rich silicon nitride, on an electro-optic substrate, like lithium niobate, optically coupled to a waveguide in the electro-optic substrate. A wide range of electro-optic devices are enabled by this high confinement waveguide structure, including: directional couplers, compact tap couplers, folded electro-optic devices, electro-optic modulators including ring resonators, electro-optic gratings. Further applications enabled by the present invention include hybrid passive planar lightwave circuits (PLC) integrated with electro-optically active waveguides, using the high confinement waveguide as an intermediary waveguide to transfer optical power between the passive and active components.

A toner including a colorant and a binder resin is provided. The binder resin includes a first resin comprising a block X comprising a resin comprising a racemic mixture of optically active monomers of a D-form compound and an L-form compound, and a block Y comprising another resin. The weight ratio of the D-form compound to the L-form compound is from 48/52 to 52/48, and the weight ratio of the block Y to the block X is from 1/3 to 3/1. The toner is obtained by dispersing or emulsifying a toner constituent liquid, in which the colorant and the binder resin are dissolved or dispersed in an organic solvent, in an aqueous medium.

The present invention relates to a method for producing optically active IHOG, which can in turn be used for the production of monatin. The present invention further relates to a method for producing optically active monatin, and aldolase used for these methods. As such, the present invention enables the synthesis of 4-(Indole-3-ylmethyl)-4-hydroxy-2-oxoglutaric acid with high optical purity, which is useful as an intermediate in the synthesis of optically active monatin, from indole pyruvic acid and pyruvic acid (or oxaloacetic acid).