2336 results about "Interposer" patented technology

A circuit package is described that includes a photonic interposer, a second interposer, and a die partially overlapping and connected to both the photonic interposer and the second interposer.

Semiconductor devices, packaging architectures and associated methods are disclosed. In one embodiment, a multi-chip module (MCM) is disclosed. The MCM includes a package substrate and an interposer disposed on a portion of the package substrate. A first integrated circuit (IC) chip is disposed on the interposer. A first memory device is disposed on the interposer and includes a first port interface including an interposer-compliant mechanical interface for coupling to the first IC chip via a first set of traces formed in the interposer. A second port interface includes a non-interposer-compliant mechanical interface for coupling to an off-interposer device. Transactions between the first IC chip and the off-interposer device pass through the first port interface and the second port interface of the first memory device.

A method of manufacturing a circuit package is described that includes connecting a photonic interposer and a second interposer, connecting a die to both the photonic interposer and the second interposer, where the die partially overlaps both the photonic interposer and the second interposer, and connecting an optical element to the photonic interposer.

The invention provides a 2.5 D substrate manufacturing method and a packaging structure. The 2.5 D substrate manufacturing method comprises the following steps: providing a first carrier on which a metal part and an intermediate layer are mounted; a metal column is arranged in the intermediate layer; forming a protective layer covering the metal component and the interposer on the first carrier; a first recess is formed on the metal feature. The interposer and the protective layer are ground such that the interposer and protective layer surfaces are lower than the surface of the metal feature. Forming a first dielectric layer with a first opening on the surfaces of the intermediate layer and the protective layer; the first opening exposes the metal column. Forming a seed layer in the first opening; the seed layer extends to the surface of the metal part and fills the first groove. A wiring layer is formed on the seed layer. The bonding force of the seed layer and the first dielectric layer can be improved, the corrosion to the side wall of the interposer in the etching process is prevented, and the packaging quality and precision are improved.

A method of manufacturing a circuit package is described that includes connecting a photonic interposer and a second interposer, connecting a die to both the photonic interposer and the second interposer, where the die partially overlaps both the photonic interposer and the second interposer, and connecting an optical element to the photonic interposer.

The invention relates to the technical field of packaging of power electronic devices, in particular to a three-dimensional packaged double-sided heat dissipation power module. The structure comprises an upper active metal brazing base material substrate and a lower active metal brazing base material substrate, a plurality of silicon carbide MOSFET chips, conductive strips and an inserter used for fixing the chips are arranged between the upper active metal brazing base material substrate and the lower active metal brazing base material substrate, the upper half-bridge chip is annularly arranged around a direct-current positive terminal, the lower half-bridge chip is annularly arranged around a direct-current negative terminal, and heat dissipation channels are formed in the upper surface and the lower surface of each chip. The impedance of branches is controlled to be equal, the current of each branch chip is balanced, the distance and layout of the chips are optimized, the overall loop area is reduced, the parasitic stray inductance of the module is reduced, in addition, the chips and the substrate are connected in a crimping mode, the chips and the copper columns are in contact through pressure to achieve electric heat conduction, the crimping materials are graphene sheets and molybdenum sheets, and the cost is low. Good contact between the chip and the copper columns is ensured, and contact resistance and thermal resistance are reduced. According to the invention, the effects of improving the heat dissipation efficiency, reducing parasitic stray inductance, balancing the current distribution of the parallel chips, and enhancing the module reliability and the conversion efficiency are achieved.

An apparatus includes an optical interposer including a first surface, a first mating protrusion extending outwardly from the first surface, and two or more alignment protrusions extending outwardly from the first surface. The first mating protrusion is to be partially disposed within a first recess formed in a second surface of a photonic integrated circuit (PIC) die when the first surface of the optical interposer opposes the second surface of the PIC die and respective distal surfaces of the two or more alignment protrusions contact the second surface of the PIC die. A first portion of an outer surface of the first mating protrusion is to contact a first side wall of the first recess and a second portion of the outer surface of the first mating protrusion is to oppose a second side wall of the first recess such that a second space is to be defined therebetween.

Semiconductor devices and systems with optical and electrical interposers, and methods of forming the same, are disclosed herein. In one example, a semiconductor device includes a glass substrate and a bridge die embedded in the glass substrate, where the glass substrate includes one or more optical waveguides and the bridge die includes an interconnect to electrically couple multiple integrated circuit dies.

In an embodiment, an interposer has a first side, a first integrated circuit device attached to the first side of the interposer with a first set of conductive connectors, each of the first set of conductive connectors having a first height, a first die package attached to the first side of the interposer with a second set of conductive connectors, the second set of conductive connectors including a first conductive connector and a second conductive connector, the first conductive connector having a second height, the second conductive connector having a third height, the third height being different than the second height, a first dummy conductive connector being between the first side of the interposer and the first die package, an underfill disposed beneath the first integrated circuit device and the first die package, and an encapsulant disposed around the first integrated circuit device and the first die package.

The invention relates to an optical engine and a forming method thereof, the optical engine comprises an adapter plate, an electric chip, an optical chip and a packaging substrate, the adapter plate comprises a first surface, a second surface opposite to the first surface, and a first through hole penetrating through the first surface and the second surface, the first surface of the adapter plate and the front surface of the electric chip are mounted on the optical chip and are electrically connected with the optical chip, and the second surface of the adapter plate is mounted on the packaging substrate and is electrically connected with the packaging substrate. According to the 3D fan-out type packaging optical engine integrated with the TSV adapter plate, the problems that an existing 3D fan-out type packaging optical engine is large in module size and cannot support the extremely high number of channels can be solved at the same time, and the problems that an existing 3D integrated optical engine with the TSV is high in cost and chip incoming materials are fixed can be solved at the same time.

An optoelectronic package structure is provided. The optoelectronic package structure includes a first photonic component and an optical interposer. The optical interposer includes a plurality of optical paths and optically coupled to the first photonic component. The optical interposer is configured to switch between the optical paths for transmitting an optical signal from the first photonic component.

Stacked devices and methods of fabrication are provided. Die-to-wafer (D2W) direct-bonding techniques join layers of dies of various physical sizes, form factors, and foundry nodes to a semiconductor wafer, to interposers, or to boards and panels, allowing mixing and matching of variegated dies in the fabrication of 3D stacked devices during wafer level packaging (WLP). Molding material fills in lateral spaces between dies to enable fan-out versions of 3D die stacks with fine pitch leads and capability of vertical through-vias throughout. Molding material is planarized to create direct-bonding surfaces between multiple layers of the variegated dies for high interconnect density and reduction of vertical height. Interposers with variegated dies on one or both sides can be created and bonded to wafers. Logic dies and image sensors from different fabrication nodes and different wafer sizes can be stacked during WLP, or logic dies and high bandwidth memory (HBM) of different geometries can be stacked during WLP.

Decoupling capacitor structures, sacrificial component structures, and assemblies are provided. For example, a decoupling capacitor structure includes a first interposer having opposing first and second surfaces and a decoupling capacitor having opposing first and second surfaces. The decoupling capacitor is disposed adjacent the first interposer such that the first surface of the decoupling capacitor is adjacent the second surface of the first interposer. A first external terminal and a third external terminal of the decoupling capacitor are formed on the first surface of the decoupling capacitor and are electrically connected to the first interposer. The decoupling capacitor structure may include a second interposer such that the decoupling capacitor is sandwiched between the first and second interposers. One or more decoupling capacitor structures may be disposed in a substrate to form a decoupling capacitor assembly, and multiple decoupling capacitor structures may be stacked to form a multilayer structure.

The present application provides a semiconductor package structure having interconnections between dies, and a manufacturing method of the semiconductor package structure. The semiconductor package structure includes a first interposer including a first substrate and a first interconnect layer over the first substrate; a second interposer disposed over the first interposer, wherein the second interposer includes a second substrate and a second interconnect layer over the second substrate; a first die disposed over the first interposer and adjacent to the second interposer; a second die disposed over the second interposer; a first molding disposed over the second interposer and surrounding the second die; and a second molding disposed over the first interposer and surrounding the first die and the first molding, wherein the first interconnect layer includes a first communication member electrically connecting the first die to the second interposer and the second die.

Disclosed herein are microelectronic assemblies including microelectronic components coupled by direct bonding, and related structures and techniques. In some embodiments, a microelectronic assembly may include a first microelectronic component including a first guard ring extending through at least a portion of a thickness of and along a perimeter; a second microelectronic component including a second guard ring extending through at least a portion of a thickness of and along a perimeter, where the first and second microelectronic components are coupled by direct bonding; and a seal ring formed by coupling the first guard ring to the second guard ring. In some embodiments, a microelectronic assembly may include a microelectronic component coupled to an interposer that includes a first liner material at a first surface; a second liner material at an opposing second surface; and a perimeter wall through the interposer and connected to the first and second liner materials.

Embodiments herein describe devices that include an interposer with a stitch formed from overlapping exposure areas, which may result in the interposer having a total surface area that is greater than a maximum reticle field corresponding to the exposure areas. Two or more integrated circuits (e.g., chiplets) can be disposed on the interposer. At least one of the integrated circuits is disposed over the stitch. The interposer can provide chip-to-chip connections between the integrated circuits.

The present application provides a semiconductor package structure having interconnections between dies, and a manufacturing method of the semiconductor package structure. The semiconductor package structure includes a first interposer including a first substrate and a first interconnect layer over the first substrate; a second interposer disposed over the first interposer, wherein the second interposer includes a second substrate and a second interconnect layer over the second substrate; a first die disposed over the first interposer and adjacent to the second interposer; a second die disposed over the second interposer; a first molding disposed over the second interposer and surrounding the second die; and a second molding disposed over the first interposer and surrounding the first die and the first molding, wherein the first interconnect layer includes a first communication member electrically connecting the first die to the second interposer and the second die.

A multilayer structure including a plurality of interposers and a plurality of electronic components disposed between the plurality of interposers is provided. The plurality of interposers and the plurality of electronic components are arranged in at least two layers, each layer comprising at least one electronic component of the plurality of electronic components disposed between two interposers of the plurality of interposers. The at least two layers are stacked adjacent to one another such that one interposer of the plurality of interposers is common to adjacent layers of the at least two layers. A first external terminal and a second external terminal may electrically connect the multilayer structure with an additional electronic component and / or within an assembly. Microelectronic assemblies incorporating a multilayer structure are also provided.

Package structure with folded die arrangements and methods of fabrication are described. In an embodiment, a package structure includes a first die and vertical interposer side-by-side. A second die is face down on an electrically connected with the vertical interposer, and a local interposer electrically connects the first die with the vertical interposer.

A semiconductor structure includes: a substrate; a package attached to a first surface of the substrate, where the package includes: an interposer, where a first side of the interposer is bonded to the first surface of the substrate through first conductive bumps; dies attached to a second side of the interposer opposing the first side; and a molding material on the second side of the interposer around the dies; a plurality of thermal interface material (TIM) films on a first surface of the package distal from the substrate, where each of the TIM films is disposed directly over at least one respective die of the dies; and a heat-dissipation lid attached to the first surface of the substrate, where the package and the plurality of TIM films are disposed in an enclosed space between the heat-dissipation lid and the substrate, where the heat-dissipation lid contacts the plurality of TIM films.

A 3D integrated circuit package is provided. The 3D integrated circuit package includes a substrate structure having a first surface and a second surface opposite to the first surface, a high-power die over the substrate structure, a lower-power die over the high-power die, a first interposer between the first surface of the substrate structure and the high-power die, and a second interposer between the high-power die and the lower-power die. The substrate structure includes a thermal enhancement portion located under the high-power die, and at least one of a thermal conductivity or a geometry of the thermal enhancement portion is different from other portions of the substrate structure. A substrate structure of the 3D integrated circuit package is also provided.

The invention discloses a preparation method and structure of an interposer embedded with a silicon bridge and a high-density silicon capacitor, and belongs to the field of advanced packaging of integrated circuits. The method can be used for 2.5 D advanced packaging high-density interconnection; the interposer structure comprises an interposer back RDL rewiring layer, an intermediate layer which is formed by embedding a silicon bridge and a high-density silicon capacitor by using a high-molecular epoxy resin material EMC, and an RDL rewiring layer on the front side of the interposer. High-density vertical interconnection between the upper RDL layer and the lower RDL layer is achieved through an electroplating ultrahigh copper column penetrating through the resin material, micron-level and submicron-level ultrahigh-density interconnection can be achieved through a silicon bridge embedded in the EMC resin, and high-performance packaging-level power supply decoupling can be achieved through a high-density silicon capacitor embedded in the resin. The preparation method of the structure is easy to implement, the cost is greatly reduced compared with that of the TSV silicon adapter plate interposer, and the method can be used for large-scale mass production of 2.5 D interposers.

A fan-out package includes a molding compound die frame laterally surrounding at least one semiconductor die; and an organic interposer including redistribution dielectric layers embedding redistribution wiring interconnects and located on a first horizontal surface of the molding compound die frame. An alignment mark region including a localized recess region is located within an opening in a second horizontal surface of the molding compound die frame. The localized recess region extends from the second horizontal surface toward the organic interposer.

A semiconductor package includes a package substrate, an interposer disposed on the package substrate, a central logic die and peripheral function dies disposed on the interposer, and at least one dummy die disposed between the central logic die and the peripheral function dies so as to form a rectangular shaped die arrangement. The at least one dummy die is disposed at a corner position of the rectangular shaped die arrangement. An underfill fills a gap between the interposer and the package substrate. A stress-reducing buffer structure is disposed on a bottom surface of the interposer.

A system may include an integrated circuit (IC) package. The IC package may include one or more IC die hosting one or more circuits, and an interposer. The interposer may be coupled to the one or more IC die via an interconnection layer. The interposer may include one or more electrically active devices configured to provide one or more security functions to secure the one or more circuits. The interposer may be coupled to a backside power of the IC package. In some embodiments, the backside power of the IC package may include one or more backside power delivery networks.

An interposer structure is provided that can be used in semiconductor packaging to electrically connect a printed circuit board to a plurality of die. The interposer structure contains a high-density silicon-less link chiplet that is laterally surrounded by, and embedded in, a lower-density redistribution layer interposer.

A method for manufacturing a semiconductor device is disclosed. Methods involve forming a stack of alternating semiconductor channels and interposers on a substrate with sacrificial structures between the interposers. Source / drain openings are formed, and strain in the channel is modified. Source / drain structures are formed in the openings, and a dielectric layer is deposited. The resulting device features a stacked nanostructure having internal spacers of varying height, enabling improved performance in electronic devices. The embodiment of the invention also relates to a semiconductor device and a forming method thereof.

Multiple component package structures are described in which an interposer chiplet is integrated to provide fine routing between components. In an embodiment, the interposer chiplet and a plurality of conductive vias are encapsulated in an encapsulation layer. A first plurality of terminals of the first and second components may be in electrical connection with the plurality of conductive pillars and a second plurality of terminals of first and second components may be in electrical connection with the interposer chiplet.

The invention describes an apparatus that implements efficient coupling between a photonic integrated circuit (PIC) and a second optical element such as a fiber or laser, while at the same time allowing for efficient polarization management and / or optical isolation. It enables the packaging of PICs with large single mode fiber counts and in- and out-coupling of light with arbitrary polarization. The apparatus comprises a glass interposer that contains at least one polarization selective element together with a pair of lenses transforming a beam profile between the 2nd optical element and a polarization selective coupler on the PIC. The invention also comprises a method for fabricating the apparatus based on a subassembly of building blocks that are manufactured using wafer-scale high-precision glass-molding and surface treatment(s) such as thin-film coating.

A package module includes an interposer including a dummy via formation region having a dummy via, a plurality of semiconductor dies on the interposer, wherein an edge of a semiconductor die in the plurality of semiconductor dies is over the dummy via formation region, and a molding material layer on the interposer encapsulating the plurality of semiconductor dies. A method of making a package module includes forming an interposer including a dummy via formation region having a dummy via, attaching a plurality of semiconductor dies to the interposer, wherein an edge of a semiconductor die in the plurality of semiconductor dies is over the dummy via formation region, and forming a molding material layer on the interposer to encapsulate the plurality of semiconductor dies.