1566 results about "Interposer" patented technology

A package system includes an integrated circuit disposed over an interposer. The interposer includes a first interconnect structure. A first substrate is disposed over the first interconnect structure. The first substrate includes at least one first through silicon via (TSV) structure therein. A molding compound material is disposed over the first interconnect structure and around the first substrate. The integrated circuit is electrically coupled with the at least one first TSV structure.

A method for fabricating a stacked semiconductor package includes providing a substrate and mounting a first semiconductor device on the substrate. An interposer is supported above the first semiconductor device opposite the substrate. The interposer is electrically connected to the substrate. A second semiconductor device is then mounted on the interposer.

A multidie semiconductor device (MDSCD) package includes a generally planar interposer comprising a substrate with a central receptacle, upper surface conductors, and outer connectors on the lower surface of the interposer. Conductive vias connect upper surface conductors with outer connectors. One or more semiconductor devices may be mounted in the receptacle and one or more other semiconductor devices mounted above and/or below the interposer and attached thereto. The package may be configured to have a footprint not significantly larger than the footprint of the largest device and/or a thickness not significantly greater than the combined thickness of included devices. Methods for assembling and encapsulating packages from multidie wafers and multi-interposer sheets or strips are disclosed. Methods for combining a plurality of packages into a single stacked package are disclosed. The methods may include use of somewhat laterally extending intermediate conductive elements, flip-chip style electrical connection, or both within the same package.

A 3D interconnect structure comprising an ultra-thin interposer having a plurality of ultra-high density of through-via interconnections defined therein. The 3D interposer electrically connects first and second electronic devices in vertical dimension and has the same or similar through-via density as the first or second electronic devices it connects. The various embodiments of the interconnect structure allows 3D ICs to be stacked with or without TSVs and increases bandwidth between the two electronic devices as compared to other interconnect structures of the prior art. Further, the interconnect structure of the present invention is scalable, testable, thermal manageable, and can be manufactured at relatively low costs. Such a 3D structure can be used for a wide variety of applications that require a variety of heterogeneous ICs, such as logic, memory, graphics, power, wireless and sensors that cannot be integrated into single ICs.

Interconnection elements for electronic components, exhibiting desirable mechanical characteristic (such as resiliency, for making pressure contacts) are formed by using a shaping tool (512) to shape an elongate core element (502) of a soft material (such as gold or soft copper wire) to have a springable shape (including cantilever beam, S-shape, U-shape), and overcoating the shaped core element with a hard material (such as nickel and its alloys), to impart to desired spring (resilient) characteristic to the resulting composite interconnection element. A final overcoat of a material having superior electrical qualities (e.g., electrical conductivity and/or solderability) may be applied to the composite interconnection element. The resulting interconnection elements may be mounted to a variety of electronic components, including directly to semiconductor dies and wafers (in which case the overcoat material anchors the composite interconnection element to a terminal (or the like) on the electronic component), may be mounted to support substrates for use as interposers and may be mounted to substrates for use as probe cards or probe card inserts. The shaping tool may be an anvil (622) and a die (624), and may nick or sever successive shaped portions of the elongate elements, and the elongate element may be of an inherently hard (springy) material. Methods of fabricating interconnection elements on sacrificial substrates are described. Methods of fabricating tip structures (258) and contact tips at the end of interconnection elements are also described.

A composite interposer for providing power and signal connections between an integrated circuit chip or chips and a substrate. The interposer includes a signal core formed from a conductive power/ground plane positioned between two dielectric layers. A method for fabricating a composite interposer comprising disposing a silicon layer on a substrate, and selectively etching the silicon layer down to the substrate to develop silicon openings with a silicon profile, and to expose part of the substrate. Vias are formed through the exposed part of the substrate. The method additionally includes filling the vias and the silicon openings with a filler material (e.g., a high-aspect-ratio-capable photodefinable epoxy polymer) to form filled silicon openings and filled vias, forming first openings through the filled silicon openings and through the filled vias, forming second opening through filler material to expose semiconductor devices on the silicon layer, and interconnecting electrically, through the first openings and through the second openings, the exposed semiconductor devices with pads disposed against a bottom of the substrate.

A package system includes a first integrated circuit disposed over an interposer. The interposer includes at least one molding compound layer including a plurality of electrical connection structures through the at least one molding compound layer. A first interconnect structure is disposed over a first surface of the at least one molding compound layer and electrically coupled with the plurality of electrical connection structures. The first integrated circuit is electrically coupled with the first interconnect structure.

A low cost technique for packaging microelectronic circuit chips fixes a die within an opening in a package core. At least one metallic build up layer is then formed on the die/core assembly and a grid array interposer unit is laminated to the build up layer. The grid array interposer unit can then be mounted within an external circuit using any of a plurality of mounting technologies (e.g., ball grid array (BGA), land grid array (LGA), pin grid array (PGA), surface mount technology (SMT), and/or others). In one embodiment, a single build up layer is formed on the die/core assembly before lamination of the interposer.

A structure and a method for forming the same. The structure includes a substrate, a first interposer on the substrate, a second interposer on the substrate, and a first bridge. The first and second interposers are electrically connected to the substrate. The first bridge is electrically connected to the first and second interposers.

A folded interposer used to achieve a high density semiconductor package is disclosed. The folded interposer is comprised of a thin, flexible material that can be folded around one or multiple semiconductor dice in a serpentine fashion. The semiconductor dice are then attached to a substrate through electrical contacts on the interposer. The folded interposer allows multiple semiconductor dice to be efficiently stacked in a high density semiconductor package by reducing the unused or waster space between stacked semiconductor dice. Vias extending through the folded interposer provide electrical communication between the semiconductor dice and the substrate. The present invention also relates to a method of packaging semiconductor dice in a high density arrangement and a method of forming the high density semiconductor package.

An RFID device, such as an RFID tag or label, includes a magnetic coupler between an interposer or strap, and an antenna. The interposer or strap includes a transponder chip and an interposer magnetic coupling element that is operatively coupled to the transponder. An antenna portion magnetic coupling element is operatively coupled to the antenna. The magnetic coupling element s together constitute a magnetic coupler that is used to magnetically couple the transponder chip of the interposer to the RFID antenna. A high permeability material may be used to enhance the magnetic coupling between the magnetic coupling elements. The magnetic coupling elements single-turn conductive loops or multiple-turn coils. The magnetic coupler may function as a transformer, with the voltage across the antenna transformed to a different voltage across the transponder chip, and vice versa.

A COC DRAM including a plurality of stacked DRAM chips is mounted on a motherboard by using an interposer. The interposer includes a Si unit and a PCB. The Si unit includes a Si substrate and an insulating-layer unit in which wiring is installed. The PCB includes a reference plane for the wiring in the Si unit. The wiring topology between a chip set and the COC DRAM is the same for every signal. Accordingly, a memory system enabling a high-speed operation, low power consumption, and large capacity is provided.

An interposer to be interposed between a semiconductor chip to be mounted thereon and a packaging board has an interposer portion made of a semiconductor and an interposer portion provided around the foregoing interposer portion integrally therewith. On both surfaces of the interposer portions, wiring patterns are formed via insulating layers. The wiring patterns are electrically connected via through holes formed at required positions in the interposer portions. The outer interposer portion is made of an insulator or a metal body. Further, external connection terminals are bonded to one surface of the interposer.

A communication cable is provided that satisfies the requirement of Cat.6 for near-end cross talk wherein the difference between the maximum and minimum values of delay time among the four twisted wire pairs constituting the cable is within 25 ns/100 m. The communication cable is made by entwining four twisted wire pairs (T1), (T2), (T3), (T4) made by twisting pairs of insulated wires made by covering electrically conductive wires by polyolefin thermoplastic resin with each pair being twisted with a twist pitch different from the others (pitch: P1<P2<P3<P4) and the inter-pair interposer (6) made of polyolefin thermoplastic resin, while being entwined with each wire pair, around a central interposer (2) made of polyolefin thermoplastic resin having cross sectional area of S1. Cross sectional area S1 of the central interposer (2) satisfies the relationship of inequality S1>=[{4.1 d/(1+{square root over (2)})}.0.35]2xpi, while the inter-pair interposer (6) that is entwined with the twisted wire pairs is located at such a position as adjoins the twisted wire pair (T1) having the least pitch P1 and does not adjoin the twisted wire pair (T4) having the largest pitch P4.

The present invention is directed to a high density test probe which provides a means for testing a high density and high performance integrated circuits in wafer form or as discrete chips. The test probe is formed from a dense array of elongated electrical conductors which are embedded in an compliant or high modulus elastomeric material. A standard packaging substrate, such as a ceramic integrated circuit chip packaging substrate is used to provide a space transformer. Wires are bonded to an array of contact pads on the surface of the space transformer. The space transformer formed from a multilayer integrated circuit chip packaging substrate. The wires are as dense as the contact location array. A mold is disposed surrounding the array of outwardly projecting wires. A liquid elastomer is disposed in the mold to fill the spaces between the wires. The elastomer is cured and the mold is removed, leaving an array of wires disposed in the elastomer and in electrical contact with the space transformer The space transformer can have an array of pins which are on the opposite surface of the space transformer opposite to that on which the elongated conductors are bonded. The pins are inserted into a socket on a second space transformer, such as a printed circuit board to form a probe assembly. Alternatively, an interposer electrical connector can be disposed between the first and second space transformer.

A semiconductor package includes a substrate, a chip, an interposer and a molding compound. The chip is electrically connected to the upper surface of the substrate. The interposer is disposed on the chip, and electrically connected to the upper surface of the substrate. The interposer includes an embedded component and a plurality of electric contacts, wherein the embedded component is located between the upper and lower surfaces of the interposer, and the electric contacts are located on the upper surface of the interposer. The molding compound seals the chip and covers the upper surface of the substrate and the lower surface of the interposer.

A semiconductor package system includes: providing a top package, a through silicon via interposer embedded in the top package; providing a bottom package having a bottom semiconductor die with a top connection adjacent the center active face thereof, a substrate interposer being embedded in the bottom package, the bottom semiconductor die being attached to the substrate interposer; and attaching the top package to the bottom package, the top package having the through silicon via interposer having a via connected to the top connection.

An embedded chip package includes a substrate having a dielectric interposer, a first metal foil on a first surface and a second metal foil on a second surface of the substrate, wherein the substrate has a cavity recessed into the first surface; a metal heatsink embedded within the cavity; a semiconductor die mounted on a flat bottom of the metal heatsink; a dielectric layer covering the first surface of the substrate; at least one built-up circuit trace layer on the dielectric layer; a solder resist layer on the built-up circuit trace layer and on the dielectric layer; a heat-dissipating metal layer on the second metal foil; and heat-dissipating plugs connecting the flat bottom of the metal heatsink and the heat-dissipating metal layer.