5608 results about "Secondary layer" patented technology

A wound dressing includes a first layer located adjacent the wound and which comprises a material that is bioabsorbable, porous and adapted for serving as a scaffold for cell attachment and proliferation; and a second layer which is in contact with the first layer and which comprises an absorbent, gel forming material adapted for serving as a barrier to cell adhesion and penetration. A method of treating a wound with the dressing is also disclosed.

A radial transverse electric polarizer device is provided. The device includes a first layer of material having a first refractive index, a second layer of material having a second refractive index, and a plurality of elongated elements azimuthally and periodically spaced apart, and disposed between the first layer and the second layer. The plurality of elongated elements interact with electromagnetic waves of radiation to transmit transverse electric polarization of electromagnetic waves of radiation. One aspect of the invention is, for example, to use such polarizer device in a lithographic projection apparatus to increase imaging resolution. Another aspect is to provide a device manufacturing method including polarizing a beam of radiation in a transverse electric polarization.

A small diameter flexible electrode designed for subcutaneous in vivo amperometric monitoring of glucose is described. The electrode is designed to allow “one-point” in vivo calibration, i.e., to have zero output current at zero glucose concentration, even in the presence of other electroreactive species of serum or blood. The electrode is preferably three or four-layered, with the layers serially deposited within a recess upon the tip of a polyamide insulated gold wire. A first glucose concentration-to-current transducing layer is overcoated with an electrically insulating and glucose flux limiting layer (second layer) on which, optionally, an immobilized interference-eliminating horseradish peroxidase based film is deposited (third layer). An outer (fourth) layer is biocompatible.

A method for forming a layer constituted by repeated stacked layers includes: forming a first layer and a second layer on a substrate under different deposition conditions to form a stacked layer, wherein the film stresses of the first and second layers are tensile or compressive and opposite to each other, and the wet etch rates of the first and second layers are at least 50 times different from each other; and repeating the above step to form a layer constituted by repeated stacked layers, wherein the deposition conditions for forming at least one stacked layer are different from those for forming another stacked layer.

A semiconductor device equipped with the dual damascene structure that is provided, which suppresses the propagation delay of signals effectively without using any complicated processes. The device is comprised of (i) a semiconductor substrate having a lower wiring layer and electronic elements; (ii) a first interlayer dielectric layer formed on the substrate; (iii) a second interlayer dielectric layer formed on the first interlayer dielectric layer, the second interlayer dielectric layer being made of carbon-containing SiO2; (iv) a third interlayer dielectric layer formed on the second interlayer dielectric layer; (v) a fourth interlayer dielectric layer formed on the third interlayer dielectric layer, the fourth interlayer dielectric layer being made of carbon-containing SiO2; (vi) the first and second interlayer dielectric layers having a via hole penetrating therethrough; (vii) the third interlayer dielectric layer having a recess overlapping with the via hole, the recess being formed to communicate with the via hole; (viii) a metal plug formed in the via hole to be contacted with the lower wiring layer or the electronic elements in the substrate; (ix) a metal wiring layer formed in the recess; and (x) a fourth interlayer dielectric layer formed on the third interlayer dielectric layer to cover the metal wiring layer.

A thin-film device includes a first electrical insulator, an oxide-semiconductor film formed on the first electrical insulator, and a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. A density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.

A prosthetic valve for replacing a cardiac valve includes an expandable support member and at least two valve leaflets made of a first layer of biological material selected from peritoneal tissue, pleural tissue or pericardial tissue. A second layer of biological material is attached to the support member. The second layer is also made from peritoneal tissue, pleural tissue or pericardial tissue. The second layer includes a radially inwardly facing surface that defines a conduit for directing blood flow. The valve leaflets extend across the conduit to permit unidirectional flow of blood through the conduit. Methods for making and implanting the prosthetic valve are also provided.

One aspect of the present invention includes a method of handing off a network session between two different access technologies, in response to a quality of service metric, while maintaining the session. Additional aspects of the present invention are described in the claims, specification and drawings.

Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules / cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.

A microelectronic device including: a substrate surmounted by a stack of layers, at least one first transistor situated at a given level of said stack, at least one second transistor situated at a second level of said stack, above said given level, the first transistor including a gate electrode situated opposite a channel zone of the second transistor, the first transistor and the second transistor being separated by an insulating zone, and said insulating zone being constituted of several different dielectric materials include a first dielectric material and a second dielectric material.

Roughly described, a patterned first layer is provided over a second layer which is formed over a substrate. In a conversion process, first layer material is consumed at feature sidewalls to form third layer material at the feature sidewalls. The width of third layer material at each of the sidewalls is greater than the width of first layer material consumed at the respective sidewall in the conversion process. The second layer is patterned using the third layer material as mask. A fourth layer of material is formed over the substrate, and planarized or otherwise partially removed so as to expose the top surfaces of the features in the first layer through the fourth layer. The exposed first layer material is removed to expose portions of the second layer through the fourth layer, and the second layer is further patterned using the fourth layer material as a mask.

A watch or other type of portable electronic console that employs a number of different functions in order to improve its usability. The watch may, for example, allow a user to connect the watch to one or more remote electronic devices, such as an electronic performance sensor or MP3 player. The watch then displays information related to the connected electronic devices. Still further, the watch may allow a user to control the operation of one or more connected remote electronic devices. Thus, if the watch is connected to a remote speed / distance monitor employing a calibration variable, then the watch may allow the user to adjust the calibration variable. The watch also provides a multi-tiered menu for accessing its various functions. Each operational mode in the first tier relates to a broad category of different functions of the watch, and contains one or more operational submodes in a second tier. The submodes in the second tier are for performing specific functions related to the generic category of functions identified by the first-tier operational mode. Still further, the watch allows a user to conveniently select how the information provided by the watch is displayed. Moreover, the watch includes a power save function that reduces the power consumption of the watch when it is not in use.

A hierarchical storage system comprises a host computer and a storage system. The storage system comprises at lease two kinds of storage devices, a first tier storage and a second tier storage. The first tier storage is a high performance (or high cost) storage device, and the second tier storage is a lower performance (or lower cost) storage device. The storage system creates a virtual volume based on the first and second tier storages, and enables the host computer to access the virtual volume. A file system in the host computer knows which region of the virtual volume corresponds to the first tier storage and which region of the virtual volume corresponds to the second tier storage. When the file system receives a command to migrate a file from the first tier to the second tier storage, e.g., from a user, the file system examines the address information of the virtual volume where the file resides, and instructs the storage system to migrate the blocks of the designated addresses.