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517 results about "High numerical aperture" patented technology

This yields a theoretical maximum numerical aperture of 1.00, but in actual practice, the highest numerical aperture for a dry objective is about 0.95 (the angular aperture half-angle equals approximately 72 degrees).

Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems

A radial transverse electric polarizer device is provided. The device includes a first layer of material having a first refractive index, a second layer of material having a second refractive index, and a plurality of elongated elements azimuthally and periodically spaced apart, and disposed between the first layer and the second layer. The plurality of elongated elements interact with electromagnetic waves of radiation to transmit transverse electric polarization of electromagnetic waves of radiation. One aspect of the invention is, for example, to use such polarizer device in a lithographic projection apparatus to increase imaging resolution. Another aspect is to provide a device manufacturing method including polarizing a beam of radiation in a transverse electric polarization.
Owner:ASML NETHERLANDS BV

Projection exposure method and projection exposure system

In a method for manufacturing semiconductor devices and other finely structured parts, a projection objective (5) is used in order to project the image of a pattern arranged in the object plane of the projection objective onto a photosensitive substrate which is arranged in the region of the image plane (12) of the projection objective. In this case, there is set between an exit surface (15), assigned to the projection objective, for exposing light and an incoupling surface (11), assigned to the substrate, for exposing light a small finite working distance (16) which is at least temporarily smaller in size and exposure time interval than a maximum extent of an optical near field of the light emerging from the exit surface. As a result, projection objectives with very high numerical apertures in the region of NA>0.8 or more can be rendered useful for contactless projection lithography.
Owner:CARL ZEISS SMT GMBH

Catadioptric projection objective

A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; wherein a first concave mirror having a first continuous mirror surface and at least one second concave mirror having a second continuous mirror surface are arranged upstream of the second intermediate image; pupil surfaces are formed between the object plane and the first intermediate image, between the first and the second intermediate image and between the second intermediate image and the image plane; and all concave mirrors are arranged optically remote from a pupil surface. The system has potential for very high numerical apertures at moderate lens material mass consumption.
Owner:CARL ZEISS SMT GMBH

Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems

A radial transverse electric polarizer device includes a substrate material having a first refractive index and a plurality of elongated azimuthally oriented elements coupled to the substrate material, the plurality of elongated elements having a second refractive index. The plurality of elements are periodically spaced apart to form a plurality of gaps such that the radial transverse electric polarizer device interacts with an electromagnetic radiation including first and second polarizations to reflect substantially all of the radiation of the first polarization and transmit substantially all of the radiation of the second polarization. The plurality of elongated elements are coated with this thin layer of absorbing material which absorbs radiation at a wavelength of the electromagnetic radiation. The polarizer device may be used, for example, in a lithographic projection apparatus to increase imaging resolution.
Owner:ASML NETHERLANDS BV

Refractive projection objective for immersion lithography

A purely refractive projection objective suitable for immersion microlithography is designed as a single-waist system with five lens groups, in the case of which a first lens group with negative refractive power, a second lens group with positive refractive power, a third lens group with negative refractive power, a fourth lens group with positive refractive power and a fifth lens group with positive refractive power are provided. A constriction site of narrowest constriction of the beam bundle lies in the region of the waist. A waist distance AT exists between the object plane and the constriction site X. The condition AT / L≦0.4 holds for a distance ratio AT / L between the waist distance AT and an object-image distance L of the projection objective. Embodiments of inventive projection objectives reach very high numerical apertures NA>1.1 in conjunction with a large image field and are distinguished by a compact overall size and good correction of the lateral chromatic aberration.
Owner:CARL ZEISS SMT GMBH

Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method

An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent. The radiation that is reflected off the substrate is radially polarized.
Owner:ASML NETHERLANDS BV

Bending-resistant large core diameter high numerical aperture multimode fiber

A bending-resistant large core diameter high numerical aperture multimode fiber includes a core and a cladding surrounding the core. The core has a radius R1 in a range of 28 to 50 microns, a refractive index profile of a parabola shape with α being in a range of 1.9 to 2.2, and a maximum relative refractive index difference Δ1% max being in a range of 1.9% to 2.5%. The cladding includes an inner cladding and / or a trench cladding, and an outer cladding disposed from the inner to the outer in sequence. The radius R2 of the inner cladding is in a range of 28 to 55 microns, and the relative refractive index difference Δ2% is −0.1% to 0.1%. The radius R3 of the trench cladding is in a range of 28 to 60 microns, and the relative refractive index difference Δ3% is in a range of −0.15% to −0.8%.
Owner:EVERPRO TECH COMPANY

High numerical aperture ring field projection system for extreme ultraviolet lithography

An all-refelctive optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first concave mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receives a chief ray at an incidence angle less than substantially 12 DEG , and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 15 DEG . Four of the six reflecting surfaces have an aspheric departure of less than substantially 7 mu m. Five of the six reflecting surfaces have an aspheric departure of less than substantially 14 mu m. Each of the six refelecting surfaces has an aspheric departure of less than 16.0 mu m.
Owner:EUV

Refractive projection objective for immersion lithography

A purely refractive projection objective suitable for immersion micro-lithography is designed as a single-waist system with five lens groups, in the case of which a first lens group with a negative refracting power, a second lens group with a positive refracting power, a third lens group with a negative refracting power, a fourth lens group with a positive refracting power and a fifth lens group with a positive refracting power are provided. The system aperture is in the region of maximum beam diameter between the fourth and the fifth lens group. Embodiments of projection objectives according to the invention achieve a very high numerical aperture of NA>1 in conjunction with a large image field, and are distinguished by a good optical correction state and moderate overall size. Pattern widths substantially below 100 nm can be resolved when immersion fluids are used between the projection objective and substrate in the case of operating wavelengths below 200 nm.
Owner:CARL ZEISS SMT GMBH

Method and arrangement for high-resolution microscope imaging or cutting in laser endoscopy

The invention is directed to a method and an arrangement for high-resolution microscopic imaging in laser endoscopy based on laser-induced object reaction radiation and for performing microscopic cuts in biological tissue. In using multiphoton processes for endoscopic applications in biological materials with an accuracy of under one millimeter, radiation of a pulsed femtosecond laser is focused into an object by means of a transmission focusing optics unit comprising a transmission system and miniature focusing optics having a high numerical aperture greater than 0.55 to trigger a local object reaction radiation in the micrometer to nanometer range, and the distal end of the transmission focusing optics unit is moved in at least two dimensions for highly spatially resolved scanning of the object and for transmitting object reaction radiation which is scanned in a locally progressive manner to an image-generating system with a photon detector. In an other embodiment the femtosecond laser radiation is energy enhanced is applied to the same transmission focusing optics unit to perform microendoscopic surgery in biological tissue.
Owner:JENLAB

High numerical aperture telemicroscopy apparatus

An imaging system consisting of a cell-phone with camera as the detection part of an optical train which includes other components. Optionally, an illumination system to create controlled contrast in the sample. Uses include but are not limited to disease diagnosis, symptom analysis, and post-procedure monitoring, and other applications to humans, animals, and plants.
Owner:RGT UNIV OF CALIFORNIA

Very-high aperture projection objective

InactiveUS20050111108A1High image-side numerical apertureImproved chromatic correctionPhotomechanical exposure apparatusMicrolithography exposure apparatusHigh numerical apertureImage plane
A very-high aperture, purely refractive projection objective is designed as a two-belly system with an object-side belly, an image-side belly and a waist (7) situated therebetween. The system diaphragm (5) is seated in the image-side belly at a spacing in front of the image plane. Arranged between the waist and the system diaphragm in the region of divergent radiation is a negative group (LG5) which has an effective curvature with a concave side pointing towards the image plane. The system is distinguished by a high numerical aperture, low chromatic aberrations and compact, material-saving design.
Owner:CARL ZEISS SMT GMBH

Projection exposure method and projection exposure system

In a method for manufacturing semiconductor devices and other finely structured parts, a projection objective (5) is used in order to project the image of a pattern arranged in the object plane of the projection objective onto a photosensitive substrate which is arranged in the region of the image plane (12) of the projection objective. In this case, there is set between an exit surface (15), assigned to the projection objective, for exposing light and an incoupling surface (11), assigned to the substrate, for exposing light a small finite working distance (16) which is at least temporarily smaller in size and exposure time interval than a maximum extent of an optical near field of the light emerging from the exit surface. As a result, projection objectives with very high numerical apertures in the region of NA>0.8 or more can be rendered useful for contactless projection lithography.
Owner:CARL ZEISS SMT GMBH

High numerical aperture fiber

An optical fiber comprising: a silica based core having a first index of refraction n1; and at least one silica based cladding surrounding the core, the at least one silica based cladding comprising index lowering non-periodic voids containing a gas, wherein at least 80% of said voids have a maximum cross-sectional dimension of less than 2000 nm, and the NA of the fiber layer situated immediately adjacent to and inside said at least one silica based cladding is at least 0.2.
Owner:CORNING INC

Very-high aperture projection objective

A very-high aperture, purely refractive projection objective is designed as a two-belly system with an object-side belly, an image-side belly and a waist (7) situated therebetween. The system diaphragm (5) is seated in the image-side belly at a spacing in front of the image plane. Arranged between the waist and the system diaphragm in the region of divergent radiation is a negative group (LG5) which has an effective curvature with a concave side pointing towards the image plane. The system is distinguished by a high numerical aperture, low chromatic aberrations and compact, material-saving design.
Owner:CARL ZEISS SMT GMBH

Semiconductor device and its manufacturing method

An object of the present invention is to provide an active matrix type display unit having a pixel structure in which a pixel electrode formed in a pixel portion, a scanning line (gate line) and a data line are suitably arranged, and high numerical aperture is realized without increasing the number of masks and the number of processes. In this display unit, a first wiring arranged between a semiconductor film and a substrate through a first insulating film is overlapped with this semiconductor film and is used as a light interrupting film. Further, a second insulating film used as a gate insulating film is formed on the semiconductor film. A gate electrode and a second wiring are formed on the second insulating film. The first and second wirings cross each other through the first and second,insulating films. A third insulating film is formed as an interlayer insulating film on the second wiring, and a pixel electrode is formed on this third insulating film. The pixel electrode can be overlapped with the first and second wirings so that an area of the pixel electrode can be increased in the display unit of a reflection type.
Owner:SEMICON ENERGY LAB CO LTD

Large mode area fiber for low-loss transmission and amplification of single mode lasers

ActiveUS7283714B1Reliable and cost-effective couplingLarge mode areaLaser using scattering effectsOptical fibre with multilayer core/claddingFiberSingle mode laser
A large mode area optical fiber includes a large diameter core (d1 up to 60 μm), and a first cladding (diameter d2) wherein the difference between refractive index (n1) in the core and the first cladding (n2) is very small (Δn<0.002), thus providing a very low numerical aperture core (NA1 between 0.02 and 0.06). The preferred ratio of d2 / d1<2. The fiber further has a second cladding, preferably a layer of air holes, having a very low refractive index n3 as compared to the core and first cladding such that the first cladding has a relatively high numerical aperture (NA2>0.4) (n3 is preferably less than 1.3). The small change in refractive index between the core and inner cladding combined with a large change in refractive index between the first cladding and second cladding provides a significantly improved single mode holding waveguide.
Owner:IPG PHOTONICS CORP

Endoscope objective lens with large entrance pupil diameter and high numerical aperture

An endoscope objective lens for collecting combined bright field (white light) and fluorescence images includes a negative lens group, a stop, and a positive lens group. The lens has a combination of large entrance pupil diameter (≧0.4 mm) for efficiently collecting weak fluorescence light, large ratio between the entrance pupil diameter and the maximum outside diameter (Dentrance / Dmax larger than 0.2), large field of view (FFOV≧120°) and favorably corrected spherical, lateral chromatic and Petzval field curvature for both visible and near infrared wavelengths.
Owner:GENERAL ELECTRIC CO

Display device, driving method thereof, terminal device, and display panel

To provide a plural-viewpoint display device having an image separating optical element such as a lenticular lens or a parallax barrier, which is capable of arranging thin film transistors and wirings while achieving substantially trapezoid apertures and high numerical aperture, and to provide a driving method thereof, a terminal device, and a display panel. A neighboring pixel pair arranged with a gate line interposed therebetween is connected to the gate line placed between the pixels, each of the pixels configuring the neighboring pixel pair is connected to the data line different from each other, and each of the neighboring pixel pairs neighboring to each other in an extending direction of the gate lines is connected to the gate line different from each other.
Owner:NEC LCD TECH CORP

Refractive projection objective for immersion lithography

A purely refractive projection objective suitable for immersion microlithography is designed as a single-waist system with five lens groups, in the case of which a first lens group with negative refractive power, a second lens group with positive refractive power, a third lens group with negative refractive power, a fourth lens group with positive refractive power and a fifth lens group with positive refractive power are provided. A constriction site of narrowest constriction of the beam bundle lies in the region of the waist. A waist distance AT exists between the object plane and the constriction site X. The condition AT / L≦0.4 holds for a distance ratio AT / L between the waist distance AT and an object-image distance L of the projection objective. Embodiments of inventive projection objectives reach very high numerical apertures NA>1.1 in conjunction with a large image field and are distinguished by a compact overall size and good correction of the lateral chromatic aberration.
Owner:CARL ZEISS SMT GMBH

High numerical aperture objective lens manufacturable in wafer form

A composite micro-lens for use in an optical or magneto-optical information storage system, made up of one or more lens elements which, when coupled in assembly, provide a desired numerical aperture. The design may provide, if necessary, a photo resist lens, a shaped ball lens, or one or more contoured surfaces within the composite construction to correct for aberrations. The composite lens designed in this manner allowing for the use of wafer-level assembly processes to provide high volume production capabilities. It is further intended that this micro-lens design support integration in an optical or magneto-optical head design.
Owner:SEAGATE TECH LLC

Deep ultraviolet unit-magnification projection optical system and projection exposure apparatus

A 1X projection optical system for deep ultra-violet (DUV) photolithography is disclosed. The optical system is a modified Dyson system capable of imaging a relatively large field at high numerical apertures at DUV wavelengths. The optical system includes a lens group having first and second prisms and four lenses having a positive-negative-positive negative arrangement as arranged in order from the prisms toward the mirror. A projection photolithography system that employs the projection optical system of the invention is also disclosed.
Owner:VEECO INSTR

High numerical aperture ring field projection system for extreme ultraviolet lithography

An all-reflective optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first convex mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receives a chief ray at an incidence angle of less than substantially 9°, and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 14°. Four of the six reflecting surfaces have an aspheric departure of less than substantially 12 mum. Five of the six reflecting surfaces have an aspheric departure of less than substantially 12 mum. Each of the six reflecting surfaces has an aspheric departure of less than substantially 16 mum.
Owner:EUV

Optical reduction system with control of illumination polarization

An optical reduction system with polarization dose sensitive output for use in the photolithographic manufacture of semiconductor devices having variable compensation for reticle retardation before the long conjugate end. The variable compensation component(s) before the reticle provides accurate adjustment of the polarization state at or near the reticle. The variable compensation components can be variable wave plates, layered wave plates, opposing mirrors, a Berek's compensator and / or a Soleil-Babinet compensator. The catadioptric optical reduction system provides a relatively high numerical aperture of 0.7 capable of patterning features smaller than 0.25 microns over a 26 mm×5 mm field. The optical reduction system is thereby well adapted to a step and scan microlithographic exposure tool as used in semiconductor manufacturing. Several other embodiments combine elements of different refracting power to widen the spectral bandwidth which can be achieved.
Owner:ASML HLDG NV

High numerical aperture ring field projection system for extreme ultraviolet lithography

An all-reflective optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first concave mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receives a chief ray at an incidence angle of less than substantially 12°, and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 15°. Four of the six reflecting surfaces have an aspheric departure of less than substantially 7 mum. Five of the six reflecting surfaces have an aspheric departure of less than substantially 14 mum. Each of the six reflecting surfaces has an aspheric departure of less than 16.0 mum.
Owner:EUV

High numerical aperture optical fiber

An optical fiber, comprising: a core with a first refractive index (n1); a silica based outer cladding surrounding the core, the outer cladding having a refractive index (n), such that the core is substantially surrounded by a gap situated between the core and the outer cladding, the gap containing at least one support structure adjacent to the outer cladding and situated between the outer cladding and the core, wherein the support structure is either hollow or gas filed and is not connected to any other support structure situated within the gap.
Owner:CORNING INC

High numerical aperture fiber

An optical fiber comprising: a silica based core having a first index of refraction n1; and at least one silica based cladding surrounding the core, the at least one silica based cladding comprising index lowering non-periodic voids containing a gas, wherein at least 80% of said voids have a maximum cross-sectional dimension of less than 2000 nm, and the NA of the fiber layer situated immediately adjacent to and inside said at least one silica based cladding is at least 0.2.
Owner:CORNING INC

Correction of birefringence in cubic crystalline optical systems

An optical system includes multiple cubic crystalline optical elements aligned along a common optical axis and having their crystal lattices oriented with respect to each other to minimize the effects of intrinsic birefringence and produce a system with reduced retardance. The optical system may be a refractive or catadioptric system having a high numerical aperture and using light with a wavelength at or below 248 nanometers. The net retardance of the system is less than the sum of the retardance contributions of the respective optical elements as the elements are oriented such that the intrinsic birefringences of the individual elements cancel each other out. In one embodiment, two [110] cubic crystalline optical elements are clocked with respect to one another and used in conjunction with a [100] cubic crystalline optical element to reduce retardance. Various birefringent elements, wave plates, and combinations thereof provide additional correction for residual retardance and wavefront aberrations. The optical system may be used in a photolithography tool to pattern substrates such as semiconductor substrates and thereby produce semiconductor devices.
Owner:ASML NETHERLANDS BV
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