517 results about "High numerical aperture" patented technology

In a method for manufacturing semiconductor devices and other finely structured parts, a projection objective (5) is used in order to project the image of a pattern arranged in the object plane of the projection objective onto a photosensitive substrate which is arranged in the region of the image plane (12) of the projection objective. In this case, there is set between an exit surface (15), assigned to the projection objective, for exposing light and an incoupling surface (11), assigned to the substrate, for exposing light a small finite working distance (16) which is at least temporarily smaller in size and exposure time interval than a maximum extent of an optical near field of the light emerging from the exit surface. As a result, projection objectives with very high numerical apertures in the region of NA>0.8 or more can be rendered useful for contactless projection lithography.

An optical fiber comprising: a silica based core having a first index of refraction n1; and at least one silica based cladding surrounding the core, the at least one silica based cladding comprising index lowering non-periodic voids containing a gas, wherein at least 80% of said voids have a maximum cross-sectional dimension of less than 2000 nm, and the NA of the fiber layer situated immediately adjacent to and inside said at least one silica based cladding is at least 0.2.

A very-high aperture, purely refractive projection objective is designed as a two-belly system with an object-side belly, an image-side belly and a waist (7) situated therebetween. The system diaphragm (5) is seated in the image-side belly at a spacing in front of the image plane. Arranged between the waist and the system diaphragm in the region of divergent radiation is a negative group (LG5) which has an effective curvature with a concave side pointing towards the image plane. The system is distinguished by a high numerical aperture, low chromatic aberrations and compact, material-saving design.

To locate / size contaminants at the surface of a dielectric or semiconductor material, a P-polarized beam of light from a monochromatic solid-state source is disposed specifically at Brewster's angle and focused to form an illuminated quasi-elliptical spot on the surface that produces effectively no reflected or scattered light from the surface. The spot is scanned over the entire surface so as to assure multiple passes of any contaminant through the spot. On each pass through the spot a contaminant will produce scattered light. A novel high numerical aperture reflective or refractive system is disposed above the surface to always view the spot and to collect / redirect the bulk of the contaminant scattered light to a detector. Illumination at Brewster's angle combined with the high numerical aperture scattered light collector / redirector maximizes the signal-to-noise ratio from the detector. These core components are packaged with support subsystems as a uniquely compact and portable apparatus.

A purely refractive projection objective suitable for immersion microlithography is designed as a single-waist system with five lens groups, in the case of which a first lens group with negative refractive power, a second lens group with positive refractive power, a third lens group with negative refractive power, a fourth lens group with positive refractive power and a fifth lens group with positive refractive power are provided. A constriction site of narrowest constriction of the beam bundle lies in the region of the waist. A waist distance AT exists between the object plane and the constriction site X. The condition AT / L≦0.4 holds for a distance ratio AT / L between the waist distance AT and an object-image distance L of the projection objective. Embodiments of inventive projection objectives reach very high numerical apertures NA>1.1 in conjunction with a large image field and are distinguished by a compact overall size and good correction of the lateral chromatic aberration.

A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; wherein a first concave mirror having a first continuous mirror surface and at least one second concave mirror having a second continuous mirror surface are arranged upstream of the second intermediate image; pupil surfaces are formed between the object plane and the first intermediate image, between the first and the second intermediate image and between the second intermediate image and the image plane; and all concave mirrors are arranged optically remote from a pupil surface. The system has potential for very high numerical apertures at moderate lens material mass consumption.

An all-reflective optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first concave mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receives a chief ray at an incidence angle of less than substantially 12°, and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 15°. Four of the six reflecting surfaces have an aspheric departure of less than substantially 7 mum. Five of the six reflecting surfaces have an aspheric departure of less than substantially 14 mum. Each of the six reflecting surfaces has an aspheric departure of less than 16.0 mum.

An optical system includes multiple cubic crystalline optical elements aligned along a common optical axis and having their crystal lattices oriented with respect to each other to minimize the effects of intrinsic birefringence and produce a system with reduced retardance. The optical system may be a refractive or catadioptric system having a high numerical aperture and using light with a wavelength at or below 248 nanometers. The net retardance of the system is less than the sum of the retardance contributions of the respective optical elements as the elements are oriented such that the intrinsic birefringences of the individual elements cancel each other out. In one embodiment, two [110] cubic crystalline optical elements are clocked with respect to one another and used in conjunction with a [100] cubic crystalline optical element to reduce retardance. Various birefringent elements, wave plates, and combinations thereof provide additional correction for residual retardance and wavefront aberrations. The optical system may be used in a photolithography tool to pattern substrates such as semiconductor substrates and thereby produce semiconductor devices.