67 results about "Single mode laser" patented technology

The invention discloses an ODAC implementation system and method based on a five-segment thermo-optical phase modulator, and relates to the technical field of optical communication, and the method comprises the following steps: obtaining single-mode laser input, dividing the single-mode laser input into two paths through a multi-mode interference device beam splitter, and transmitting the single-mode laser input into an upper arm and a lower arm of a Mach-Zehnder modulator; the current is adjusted through the thermo-optic phase modulator to control the temperature, the refractive index is changed to introduce phase delay, and the phase difference of two arms of the Mach-Zehnder modulator is calibrated; on the basis of a five-segment thermo-optical modulator, hierarchical amplitude modulation is carried out on beam splitting light according to digital input, a phase space is constructed by utilizing weight combination, and a linear optimal discrete state is screened; the modulated light is combined by a multi-mode interference device beam combiner, and digital-analog mapping output of light intensity is carried out; a detector installed at an output port of the five-segment thermo-optical phase modulator is used for monitoring output optical power in real time, the output optical power is fed back to a control circuit to calculate errors, thermo-optical modulation current is dynamically adjusted to compensate offset point drift, and optical digital analog conversion is achieved.

The invention belongs to the technical field of light field modulation, and particularly relates to a light field modulation method based on a Fabry-Perot microcavity internal device. The method comprises the following steps: based on a micro-nano light processing scheme, constructing a Fabry-Perot microcavity laser based on intracavity low-light element light field shaping, and then placing the laser in a light field test system; the method comprises the following steps: (1) detecting an output laser pattern, and controllably constraining and modulating an intracavity light field by adjusting the position of a laser; (2) detecting an output laser spectrum, further adjusting the pumping energy to obtain a relation between a spectrum peak value and the pumping energy, and realizing high-quality factor single-mode laser; by designing the matching relation between the optical continuous interface or diffraction structure configuration and the micro-cavity configuration in the micro-cavity laser, the performance parameters of the Fabry-Perot micro-cavity and the modulation of the intra-cavity light field can be realized, so that the high-quality factor micro-cavity laser and the customized output of the light field in a specific laser mode are realized.

The invention relates to the technical field of integrated modulators, in particular to a single-mode laser based on heterogeneous integration and a manufacturing method thereof.The single-mode laser based on heterogeneous integration comprises a thin-film lithium niobate layer, a narrow-band Bragg grating, a broadband Bragg grating and a waveguide structure are arranged on the thin-film lithium niobate layer, the 3dB bandwidth of the narrow-band Bragg grating is smaller than 1 nm, and the bandwidth of the broadband Bragg grating is smaller than 1 nm. The reflectivity is greater than 50%, the 3dB reflection bandwidth of the broadband Bragg grating is greater than 40nm, and the reflectivity is greater than 95%; and the III-V group semiconductor material layer is provided with a P contact layer, a quantum well layer, a P-InP waveguide structure, an N-InP waveguide structure, a P electrode and an N electrode. The manufacturing method of the single-mode laser based on heterogeneous integration comprises the following steps: forming a broadband Bragg grating, a narrowband Bragg grating and a waveguide structure on a thin-film lithium niobate layer; and manufacturing a P contact layer, a quantum well layer, a P-InP waveguide structure, an N-InP waveguide structure, a P electrode and an N electrode on the III-V group semiconductor material layer. According to the invention, the problem of low integration level caused by a hybrid integration mode is solved.

The invention discloses an experimental device and an experimental method for monitoring oil-gas-water components in a shaft, and particularly relates to the technical field of monitoring equipment.The experimental device comprises the shaft, a single-mode laser, a polarization maintaining optical fiber, a Brillouin optical time domain reflectometer, a condensate gas tank, a pressurization driving device, a stratum water tank, a condensate oil tank, a natural gas tank, a conveying device, an oil-gas-water separator and a waste oil tank; the polarization-maintaining optical fiber is spirally wound outside the shaft, and two ends of the polarization-maintaining optical fiber are respectively connected with the single-mode laser and the Brillouin optical time domain reflectometer; the pressurization driving device is used for pressurizing the condensate gas to the dew point pressure higher than that of the condensate gas and driving the condensate gas to leave the condensate gas tank; the conveying device is used for conveying formation water of the formation water tank, condensate oil of the condensate oil tank and natural gas of the natural gas tank to the shaft, and an outlet of the shaft is connected with the waste oil tank through the oil-gas-water separator. The oil-gas-water three-phase fluid in the shaft can be captured and dynamically tracked in real time, the measurement precision is high, and the experimental device is simple in structure and convenient to install.

The invention provides a single-mode 660nm semiconductor laser device with a superlattice structure and a preparation method of the single-mode 660nm semiconductor laser device, and belongs to the technical field of photoelectrons. The multi-quantum-well multi-quantum-well light-emitting diode sequentially comprises a GaAs substrate, a buffer layer, a sectional lower limiting layer, a lower waveguide layer, a multi-quantum-well active region, an AlInP / GaP superlattice, an upper waveguide layer, a sectional upper limiting layer, a band gap transition layer and a GaAs cap layer from bottom to top. The preparation method comprises the processes of substrate processing, buffer layer growth, V-group source switching, limiting layer and waveguide layer epitaxy, multi-quantum well and superlattice structure growth, cap layer deposition and the like. Through the segmented design of the superlattice structure and the limiting layer, the hole injection efficiency and the carrier limiting capability are improved, and the high-temperature working characteristic of the device is effectively improved. Stable output of single-mode laser in the 660nm wave band is achieved, reliable power output of 120mW can be kept in a high-temperature environment of 60 DEG C, and meanwhile, low loss, high conversion efficiency and excellent photoelectric performance are achieved.

The invention relates to a speed measuring device and method based on a spatial light modulator, and the device comprises a single-mode laser, a beam-expanding collimation module, the spatial light modulator, a 4F system, a projection convex lens, a receiving convex lens, and a photoelectric detector. The beam expanding and collimating module is used for receiving a laser beam output by the single-mode laser and emitting the laser beam to the spatial light modulator after beam expanding and collimating; the spatial light modulator diffracts incident light and generates first-order diffracted light with alternately dark and bright stripes; the 4F system receives the first-level diffraction light, filters the first-level diffraction light and outputs the filtered first-level diffraction light to The projection convex lens vertically irradiates the filtered first-order diffraction light to the surface of an object to be measured, and the stripe change direction of equidistant light and shade alternated stripes in the first-order diffraction light is consistent with the motion direction of the object to be measured; the photoelectric detector receives part of scattered light carrying the speed information of the to-be-measured object based on the receiving convex lens and converts the scattered light into an electric signal so as to calculate the speed of the to-be-measured object.

A detection system for a vehicle includes an imaging device configured to capture an image of an interior surface of the vehicle. The illumination assembly includes an array of laser diodes, each configured to project illumination, each configured as at least one of a single mode laser or a vertical cavity surface emitting laser ("VCSEL"). An optical element is proximate to the laser diode array and includes a collimating element for directing illumination to form at least one spot of light. A processor is in communication with the imaging device and the illumination assembly. The processor is configured to transmit a signal to operate the laser diode array and process an image of the interior surface to detect at least one of a change in position of the at least one point or a change in speckle content.

A detection system for a vehicle includes an imaging device configured to capture an image of an interior surface of the vehicle. An illumination assembly includes an array of laser diodes each configured to project an illumination, each laser diode is configured as at least one of a single mode laser or a vertical-cavity surface-emitting laser (“VCSEL”). An optical element is proximate to the array of laser diodes and includes a collimation element for guiding the illumination to form at least one light spot. A processor is in communication with the imaging device and the illumination assembly. The processor is configured to communicate a signal to operate the array of laser diodes and process the image of the interior surface to detect at least one of a change in a location or a speckle content of the at least one spot.

A computer-generated holographic display system is described to have improved image quality when used with an illumination source other than a single-mode laser, such as a broadband light source including LEDs and multimode lasers. In one example, the computer-generated holographic display system has angular resolution and an angular field of view at a viewing position. The computer-generated holographic display system includes an illumination system comprising an LED or a multimode laser, a spatial light modulator (SLM) illuminated by the illumination system, and an optical system configured to re-image the SLM at a predetermined distance from the viewing position. The illumination system has an étendue at the SLM that is less than or equal to the value obtained by dividing the product of the angular resolution at the viewing position and the angular field of view at the viewing position by the maximum focusing power of the virtual image points with respect to the re-imaged SLM. The angular resolution is less than about 1 milliradian. In another example, the computer-generated holographic display system has an angular resolution and a restricted aperture width at the viewing position. The computer-generated holographic display system includes an illumination system comprising an LED or a multimode laser and having a spectral bandwidth and a nominal wavelength, a spatial light modulator (SLM) illuminated by the illumination system, and an optical system configured to re-image the SLM at a predetermined distance from the viewing position. The spectral bandwidth divided by the nominal wavelength is less than or equal to the value obtained by dividing the angular resolution by the product of the restricted aperture width and the maximum focusing power of the virtual image points with respect to the re-imaged SLM, and the angular resolution is less than about 1 milliradian.

The invention provides a testing method based on a single-mode laser control panel, and relates to the field of laser testing. The test method based on the single-mode laser control panel comprises the following steps: constructing a multi-dimensional test system, wherein the system comprises a power supply performance test module, a signal integrity test module, a photoelectric device test module and a thermal stress test module; and a comprehensive test report including power supply performance, signal integrity, photoelectric device performance and thermal stress test results is generated. According to the embodiment of the invention, the systematic evaluation of the key performance indexes of the single-mode laser control panel is realized by constructing a multi-dimensional and multi-azimuth test system. Therefore, clear rated use parameter guidance can be provided for a user, the fault risk of the laser in subsequent application is reduced from the source, the stability and the service life of the laser are guaranteed, and the reliability and the safety of equipment operation are improved.

The application relates to the technical field of lasers, in particular to a preparation method of a highly coupled modulation single-mode laser, which comprises a coupling module and two light-emitting modules, the light-emitting surfaces of the two light-emitting modules are located on the same side, the coupling module is located on the side of the light-emitting surface of the light-emitting module, two parallel light channels are arranged in the coupling module, the ends of the two light channels are respectively opposite to the light-emitting surfaces of the two light-emitting modules, a light outlet is arranged on the side of the coupling module away from the light-emitting module, the ends of the two light channels away from the light-emitting module are combined and are in communication with the light outlet, and a wave-lock ring is arranged between the two light channels. The lasers emitted by the two light-emitting modules enter the two light channels respectively, are coupled when passing through the wave-lock ring, and are finally discharged from the light outlet. The two light-emitting modules and the wave-lock ring are integrated on one chip, the design cost can be simplified and the module volume can be compressed in subsequent packaging, there is no redundant spatial light path, and the reliability and service life of the module are greatly improved.

The invention provides a low-threshold continuous wave pumping vertical cavity surface emitting single-mode laser and a preparation method thereof. The low-threshold continuous wave pumping vertical cavity surface emitting single-mode laser based on the colloidal quantum dots comprises an optical substrate; the bottom distributed Bragg reflector is arranged on the optical substrate; the colloidal quantum dot active gain layer is arranged on the bottom distributed Bragg reflector; and the top distributed Bragg reflector is arranged on the colloidal quantum dot active gain layer. The low-threshold continuous wave pumping vertical cavity surface emitting single-mode laser and the preparation method thereof have the advantages that the operation is simple, convenient and efficient, low-threshold and high-stability continuous laser output is realized, and the blank of a continuous laser based on colloidal quantum dots in the prior art is effectively filled up.

This invention relates to the field of high-power fiber laser technology and discloses a method for synergistically suppressing stimulated Raman scattering and mode instability effects in fiber lasers. The fiber laser includes a pump module and a gain module. The gain module includes a gain fiber. By inserting a section of all-solid-state photonic bandgap fiber in the middle of the gain fiber, the synergistic suppression of stimulated Raman scattering and mode instability effects is achieved. The high-loss characteristic of all-solid-state photonic bandgap fiber in the Raman band is used to suppress stimulated Raman scattering. At the same time, the high-loss characteristic of all-solid-state photonic bandgap fiber for higher-order modes is used to filter out higher-order modes, reducing the interference intensity between the fundamental mode and higher-order modes to effectively suppress mode instability effects and achieve high-power single-mode laser output.

The invention provides a high-precision Fourier Raman displacement table correction device and a multi-dimensional correction method. The high-precision Fourier Raman displacement table correction device comprises a single-mode laser, a beam splitter, a detector, a first reflector, a second reflector, a displacement table, a monopulse counter and a computer, generating a laser interference pattern; performing phase fitting to obtain a phase initial phase; performing phase unwrapping on the initial phase to obtain a moving path 1 of a displacement table, and obtaining a moving path 2 through a counter mode; respectively carrying out linear fitting on the moving path 1 and the moving path 2, comparing the maximum linear residual error of the moving path 1 and the moving path 2, and selecting the moving path of the displacement table with the minimum maximum linear residual error value for correcting the Raman spectrum. The most suitable path of the displacement table is selected by selecting the path of the displacement table, the Raman spectrum is corrected, the calibration of the high-precision path of the displacement table can be met, and the real-time and efficient calibration of the displacement table is realized.

The invention relates to a multifunctional device capable of testing the optical performance of a super lens, which belongs to the technical field of testing devices and comprises a first light source module, a diaphragm module, a sample operating table, a microscopic light path system and a computer control and display system, the first light source module is composed of a single-mode laser light source and an optical fiber collimator. The diaphragm module comprises a fixed aperture diaphragm and a sample aperture diaphragm, the sample aperture diaphragm is subjected to three-dimensional adjustment through the sample operation table, and the sample aperture diaphragm can switch different apertures so as to adapt to lenses with different designs. And the method has good universality.

The application discloses a Kagome photonic crystal, belongs to the technical field of lasers, and is used for constructing a topological laser, wherein the Kagome photonic crystal comprises a plurality of supercells, each supercell comprises three hexapole cavities, and the plurality of supercells are periodically arranged along a first direction and a second direction, so that all the hexapole cavities form a Kagome lattice structure as a whole. The technical scheme provided by the application constructs a Kagome supercell through the hexapole cavities, the momentum space of the Kagome lattice has a flat-band energy band with close-to-zero dispersion, the photon group velocity in the flat band tends to be zero, the interaction between light and matter is enhanced, and the Kagome photonic crystal has a natural advantage of constructing a two-dimensional topological laser. Through design of lattice parameters, a single light field mode that can be adjusted and controlled appears in a forbidden band, the band edge mode competition problem of a traditional semiconductor laser is effectively inhibited, and a stable single-mode laser with a high quality factor is obtained.

An edge-emitting single-mode laser provided with an oxidized aperture grating (211) and a preparation method therefor. The structure of the edge-emitting single-mode laser provided with an oxidized aperture grating (211) comprises, from top to bottom, a top electrode layer (111), a first contact layer (112), a first confinement layer (113), a first oxide layer (114), an active layer (121), a second oxide layer (131), a second confinement layer (132), a second contact layer (133), and a bottom electrode layer (134). A waveguide mode of the edge-emitting single-mode laser provided with an oxidized aperture grating (211) is confined by the first oxide layer (114) and the second oxide layer (131) forming a single-mode light-emitting aperture (311). The oxidized aperture grating (211) is transmitted inwards by an external etched grating, thereby spontaneously forming periodic refractive index modulation. The formed oxidized aperture grating (211) is not sensitive to etching depth, and grating position does not change along with etching depth, thereby facilitating acquisition of a repeatable and stable grating coupling coefficient. The oxidized aperture grating (211) confines a current injection window, so that device current injection efficiency is high and leakage current is small, thereby improving the performance of the edge-emitting single-mode laser.

Disclosed herein is a spectroscopy device incorporating a mid-infrared laser. In one particular embodiment a spectroscopy device is provided including: a substrate; a single mode laser positioned on the substrate; a single mode detector positioned opposite to the single mode laser on the substrate. A gap is formed between the single mode laser and the single mode detector and a substance is positioned in the gap. The single mode laser is configured to output a tunable narrow wavelength of radiation towards the detector and when the single mode laser outputs a wavelength of radiation overlapping one of the substance's rotational-vibrational energy levels, the substance at least partially absorbs the radiation. The single mode detector is configured to measure the amount of narrow wavelength radiation that is not absorbed by the substance between the single mode detector and the single mode laser.

The invention relates to a 915nm single-mode laser epitaxial wafer based on a photonic crystal structure and a preparation method thereof, and belongs to the technical field of photoelectron, the 915nm single-mode laser epitaxial wafer comprises a GaAs substrate, and the GaAs substrate sequentially comprises a GaAs buffer layer, an N limiting layer, an N waveguide layer, an N-side barrier layer, a quantum well layer, a P-side barrier layer, a P inner waveguide layer, a P outer waveguide layer, a transition layer and a GaAs ohmic contact layer from bottom to top; a photonic crystal structure is adopted as a P-side outer waveguide layer, so that the limitation on a light field can be ensured while the high-aluminum component of a traditional cladding structure is avoided. A GaAsP / InGaAs / GaAsP strain compensation quantum well is used, and a photonic crystal periodic structure is used on the P side to replace a limiting layer and serves as an outer waveguide structure.

The invention relates to the technical field of ultrafast laser, and discloses a pumping intensity optimization method of a laser, equipment and a medium. The method comprises the following steps: carrying out graded pumping design, and pre-amplifying signal light output by a mode-locked fiber oscillator by adopting a single-mode laser diode; the method comprises the following steps: establishing a mathematical model of pumping power and gain fiber length, and when the pumping power is increased from low power to preset power, adjusting the chirp amount of a chirp fiber grating through a temperature tuning device, and performing pre-chirp management on signal light input into a multimode gain fiber; under high pumping intensity, the initial chirp amount of signal light is optimized, so that the signal light entering the multimode gain optical fiber is in a negative chirped pulse state, the self-phase modulation and dispersion effect of the signal light when the signal light is amplified in the multimode gain optical fiber is balanced, and the stimulated Raman scattering and self-focusing phenomena are avoided; and the compressed pulse width is used as a feedback signal to realize the optimal matching of the signal light energy and the pulse width.

The invention discloses a single-mode selection method of a semiconductor laser, and belongs to the technical field of semiconductor lasers. A space pumping excitation semiconductor laser is adopted, and the semiconductor laser is of a periodic microcavity laser structure with any cavity mode meeting Bloch mode distribution. And the spatial distribution of the modulation space pump light is overlapped with the field envelope distribution of the target order Bloch mode of the semiconductor laser, so that selective injection of the target order Bloch mode is realized. According to the invention, the complexity of micro-nano structure design and processing in static mode regulation and control is avoided; the interaction between the optical interference fringes and the vacuum electromagnetic field in the photonic crystal microcavity improves the noise characteristic of the laser, and single-mode laser with narrow linewidth and low noise characteristics is realized.

The present invention discloses a semiconductor laser element with a hyperbolic dispersion layer, which relates to the technical field of semiconductor optoelectronic devices; in order to solve the defect problems existing in all-solid-state semiconductor lasers in the prior art; it sequentially includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer from bottom to top, and hyperbolic dispersion layers are provided between the lower confinement layer and the lower waveguide layer, between the lower waveguide layer and the active layer, and between the upper waveguide layer and the active layer. The present invention can regulate the hyperbolic dispersion of two-dimensional polariton wave packets, reduce the leakage of the optical field mode to the substrate, suppress the substrate mode, improve the ripples appearing in the far-field image FFP of the laser, form single-mode laser emission, and reduce the optical absorption of the upper waveguide layer and the lower waveguide layer, reduce the internal optical loss, enhance the hole injection efficiency, improve the electrical lasing gain, reduce the excitation threshold and gain uniformity of the laser element, and enhance the confinement factor.

A surface-emitting, single mode laser includes a gain medium and a photonic structure. The gain medium is configured to emit an electromagnetic wave. The photonic structure is electromagnetically coupled to the gain medium and has a cavity mode-dependent scaling of losses so that higher order modes are coupled to more lossy bands and a fundamental mode, at a high symmetry point, is coupled to a less lossy band of the photonic structure.

The application belongs to the technical field of semiconductor optoelectronic devices, and particularly relates to a kind of integrated SOA compensation displacement grating DBR wide tuning laser system, comprising: gain chip area, for providing laser gain;Displacement grating DBR reflection area, optically coupled with gain chip area, constitutes DBR main laser cavity;Double micro-ring resonator module, comprising first micro-ring resonator and second micro-ring resonator;The radius of first micro-ring resonator and second micro-ring resonator is different, and wavelength selection is carried out on the output light of main cavity through vernier effect;Sagnac ring feedback structure, optically coupled with double micro-ring resonator module, for feeding back selected wavelength optical signal to gain chip area;Semiconductor optical amplifier, set outside main cavity, for power compensation of external cavity optical signal and optical signal fed back to laser main cavity.The scheme can realize wide tuning, high stability, low insertion loss single-mode laser output through precise regulation and control of displacement grating, combined with double micro-ring vernier mode selection, Sagnac locking and SOA compensation.

The invention discloses a topological laser and a manufacturing method. The topological laser comprises an active layer, a topological normal condition photonic crystal and a topological non-normal condition photonic crystal, wherein the topological normal condition photonic crystal and the topological non-normal condition photonic crystal adopt one-dimensional topological photonic crystals; the active layer is a perovskite quantum layer, and a limiting effect can be generated at a spliced boundary, so that an interface state is limited between two photonic crystals. According to the invention, photoetching-free, high-directivity and low-threshold single-mode laser emission can be realized; the technology difficulty and the preparation cost can be reduced, and a way is laid for realizing an efficient topology laser working in the whole visible spectrum range.

A portable laser-based intercepting apparatus, for intercepting / neutralizing a remote UAS target. The portable laser-based intercepting apparatus includes a fiber-based laser generator for generating a. laser beam, at least one Beam Quality Preserving (BQP) optical fiber, and a telescopic device. The fiber-based laser generator is coupled to operate with the at least one BQP optical fiber, wherein the BQP optical fiber is configured to preserve and transfer a single mode or near single mode laser beam, to the telescopic device. The telescopic device may be a constant adjustable divergence telescopic device or an adjustable divergence telescopic device.The telescopic device is configured to transfer a single mode or near single mode laser beam to the target UAS, when aimed thereon. The accumulated heat generated at the laser beam spot upon the target UAS is preconfigured to intercept the target UAS.

The invention relates to single-mode laser and an integration process for making the same. The integration process for making a single-mode laser, comprising steps of: fabricating a III-V semiconductor optical amplifier (SOA) which includes an active layer; fabricating a silicon photonic (SiPh) waveguide which includes a passive waveguide layer and an interlayer; flipping and aligning the SOA; and connecting the SOA to the waveguide by one or more flip-chip bumps.

The present application relates to a welding station (260) for welding high-thickness annular parts (22;22',22") comprises support means, rotation driving means, and a welding device (270). The welding device comprises at least one high performance laser device capable of emitting a high power laser, configured to emit a single-mode laser beam dynamically modifiable in the focus shape and position.

The invention discloses a high-power all-fiber laser capable of suppressing a mode instability effect, and the laser comprises a multimode coupling light field module which is used for splitting a single-mode light beam into N paths, the phase, amplitude and polarization parameters of the N paths of split single-mode laser are subjected to closed-loop adaptive adjustment and then are combined into one path of time-varying multi-mode coupling light field output by the N-in-one coupler; the time-varying multimode coupling light field is injected into the main amplifier; and the spatial light detection feedback system is used for collecting a part of output laser of the main amplifier for closed-loop feedback control of the light field phase, polarization and amplitude of the N paths of single-mode laser in the multimode coupling light field module. The time-varying multimode coupling optical field is injected into the main amplifier, the thermally induced refractive index grating in the gain optical fiber can be destroyed, mutual coupling between a fundamental mode and a high-order mode is avoided, the purpose of restraining mode instability is finally achieved, and stable output of high light beam quality is achieved through a space light detection feedback system.

The present invention relates to the technical field of semiconductors and discloses a side-emitting single-mode laser with a waveguide having an oxidized aperture hole and its manufacturing process, which prepares an oxidized aperture hole as an optically limited waveguide structure of a single-mode laser, wherein the partially insulated oxidized aperture hole limits the current injection window, which leads to a high current injection efficiency and a low leakage current of the device, while at the same time the side walls of the waveguide have lower scattering losses, which leads to a more pronounced suppression of higher modes and promotes the realization of a high-power single-mode laser with extremely low threshold current density.In the present invention, a structure with a surface grating is also introduced, thereby enabling the design of a single-mode laser with a high grating coupling coefficient, wherein the preparation process is simple, reliable and highly reproducible, which avoids complex secondary epitaxy processes, thereby reducing the risk of chamber contamination and promoting the reproducible preparation of high-quality gratings, thus enabling the realization of multi-wavelength arrays.