33 results about "Single mode laser" patented technology

The invention provides a single-mode 660nm semiconductor laser device with a superlattice structure and a preparation method of the single-mode 660nm semiconductor laser device, and belongs to the technical field of photoelectrons. The multi-quantum-well multi-quantum-well light-emitting diode sequentially comprises a GaAs substrate, a buffer layer, a sectional lower limiting layer, a lower waveguide layer, a multi-quantum-well active region, an AlInP / GaP superlattice, an upper waveguide layer, a sectional upper limiting layer, a band gap transition layer and a GaAs cap layer from bottom to top. The preparation method comprises the processes of substrate processing, buffer layer growth, V-group source switching, limiting layer and waveguide layer epitaxy, multi-quantum well and superlattice structure growth, cap layer deposition and the like. Through the segmented design of the superlattice structure and the limiting layer, the hole injection efficiency and the carrier limiting capability are improved, and the high-temperature working characteristic of the device is effectively improved. Stable output of single-mode laser in the 660nm wave band is achieved, reliable power output of 120mW can be kept in a high-temperature environment of 60 DEG C, and meanwhile, low loss, high conversion efficiency and excellent photoelectric performance are achieved.

The invention relates to a speed measuring device and method based on a spatial light modulator, and the device comprises a single-mode laser, a beam-expanding collimation module, the spatial light modulator, a 4F system, a projection convex lens, a receiving convex lens, and a photoelectric detector. The beam expanding and collimating module is used for receiving a laser beam output by the single-mode laser and emitting the laser beam to the spatial light modulator after beam expanding and collimating; the spatial light modulator diffracts incident light and generates first-order diffracted light with alternately dark and bright stripes; the 4F system receives the first-level diffraction light, filters the first-level diffraction light and outputs the filtered first-level diffraction light to The projection convex lens vertically irradiates the filtered first-order diffraction light to the surface of an object to be measured, and the stripe change direction of equidistant light and shade alternated stripes in the first-order diffraction light is consistent with the motion direction of the object to be measured; the photoelectric detector receives part of scattered light carrying the speed information of the to-be-measured object based on the receiving convex lens and converts the scattered light into an electric signal so as to calculate the speed of the to-be-measured object.

A detection system for a vehicle includes an imaging device configured to capture an image of an interior surface of the vehicle. The illumination assembly includes an array of laser diodes, each configured to project illumination, each configured as at least one of a single mode laser or a vertical cavity surface emitting laser ("VCSEL"). An optical element is proximate to the laser diode array and includes a collimating element for directing illumination to form at least one spot of light. A processor is in communication with the imaging device and the illumination assembly. The processor is configured to transmit a signal to operate the laser diode array and process an image of the interior surface to detect at least one of a change in position of the at least one point or a change in speckle content.

A detection system for a vehicle includes an imaging device configured to capture an image of an interior surface of the vehicle. An illumination assembly includes an array of laser diodes each configured to project an illumination, each laser diode is configured as at least one of a single mode laser or a vertical-cavity surface-emitting laser (“VCSEL”). An optical element is proximate to the array of laser diodes and includes a collimation element for guiding the illumination to form at least one light spot. A processor is in communication with the imaging device and the illumination assembly. The processor is configured to communicate a signal to operate the array of laser diodes and process the image of the interior surface to detect at least one of a change in a location or a speckle content of the at least one spot.

The invention provides a testing method based on a single-mode laser control panel, and relates to the field of laser testing. The test method based on the single-mode laser control panel comprises the following steps: constructing a multi-dimensional test system, wherein the system comprises a power supply performance test module, a signal integrity test module, a photoelectric device test module and a thermal stress test module; and a comprehensive test report including power supply performance, signal integrity, photoelectric device performance and thermal stress test results is generated. According to the embodiment of the invention, the systematic evaluation of the key performance indexes of the single-mode laser control panel is realized by constructing a multi-dimensional and multi-azimuth test system. Therefore, clear rated use parameter guidance can be provided for a user, the fault risk of the laser in subsequent application is reduced from the source, the stability and the service life of the laser are guaranteed, and the reliability and the safety of equipment operation are improved.

The application relates to the technical field of lasers, in particular to a preparation method of a highly coupled modulation single-mode laser, which comprises a coupling module and two light-emitting modules, the light-emitting surfaces of the two light-emitting modules are located on the same side, the coupling module is located on the side of the light-emitting surface of the light-emitting module, two parallel light channels are arranged in the coupling module, the ends of the two light channels are respectively opposite to the light-emitting surfaces of the two light-emitting modules, a light outlet is arranged on the side of the coupling module away from the light-emitting module, the ends of the two light channels away from the light-emitting module are combined and are in communication with the light outlet, and a wave-lock ring is arranged between the two light channels. The lasers emitted by the two light-emitting modules enter the two light channels respectively, are coupled when passing through the wave-lock ring, and are finally discharged from the light outlet. The two light-emitting modules and the wave-lock ring are integrated on one chip, the design cost can be simplified and the module volume can be compressed in subsequent packaging, there is no redundant spatial light path, and the reliability and service life of the module are greatly improved.

The invention provides a low-threshold continuous wave pumping vertical cavity surface emitting single-mode laser and a preparation method thereof. The low-threshold continuous wave pumping vertical cavity surface emitting single-mode laser based on the colloidal quantum dots comprises an optical substrate; the bottom distributed Bragg reflector is arranged on the optical substrate; the colloidal quantum dot active gain layer is arranged on the bottom distributed Bragg reflector; and the top distributed Bragg reflector is arranged on the colloidal quantum dot active gain layer. The low-threshold continuous wave pumping vertical cavity surface emitting single-mode laser and the preparation method thereof have the advantages that the operation is simple, convenient and efficient, low-threshold and high-stability continuous laser output is realized, and the blank of a continuous laser based on colloidal quantum dots in the prior art is effectively filled up.

This invention relates to the field of high-power fiber laser technology and discloses a method for synergistically suppressing stimulated Raman scattering and mode instability effects in fiber lasers. The fiber laser includes a pump module and a gain module. The gain module includes a gain fiber. By inserting a section of all-solid-state photonic bandgap fiber in the middle of the gain fiber, the synergistic suppression of stimulated Raman scattering and mode instability effects is achieved. The high-loss characteristic of all-solid-state photonic bandgap fiber in the Raman band is used to suppress stimulated Raman scattering. At the same time, the high-loss characteristic of all-solid-state photonic bandgap fiber for higher-order modes is used to filter out higher-order modes, reducing the interference intensity between the fundamental mode and higher-order modes to effectively suppress mode instability effects and achieve high-power single-mode laser output.

The application discloses a Kagome photonic crystal, belongs to the technical field of lasers, and is used for constructing a topological laser, wherein the Kagome photonic crystal comprises a plurality of supercells, each supercell comprises three hexapole cavities, and the plurality of supercells are periodically arranged along a first direction and a second direction, so that all the hexapole cavities form a Kagome lattice structure as a whole. The technical scheme provided by the application constructs a Kagome supercell through the hexapole cavities, the momentum space of the Kagome lattice has a flat-band energy band with close-to-zero dispersion, the photon group velocity in the flat band tends to be zero, the interaction between light and matter is enhanced, and the Kagome photonic crystal has a natural advantage of constructing a two-dimensional topological laser. Through design of lattice parameters, a single light field mode that can be adjusted and controlled appears in a forbidden band, the band edge mode competition problem of a traditional semiconductor laser is effectively inhibited, and a stable single-mode laser with a high quality factor is obtained.

Disclosed herein is a spectroscopy device incorporating a mid-infrared laser. In one particular embodiment a spectroscopy device is provided including: a substrate; a single mode laser positioned on the substrate; a single mode detector positioned opposite to the single mode laser on the substrate. A gap is formed between the single mode laser and the single mode detector and a substance is positioned in the gap. The single mode laser is configured to output a tunable narrow wavelength of radiation towards the detector and when the single mode laser outputs a wavelength of radiation overlapping one of the substance's rotational-vibrational energy levels, the substance at least partially absorbs the radiation. The single mode detector is configured to measure the amount of narrow wavelength radiation that is not absorbed by the substance between the single mode detector and the single mode laser.

The invention relates to the technical field of ultrafast laser, and discloses a pumping intensity optimization method of a laser, equipment and a medium. The method comprises the following steps: carrying out graded pumping design, and pre-amplifying signal light output by a mode-locked fiber oscillator by adopting a single-mode laser diode; the method comprises the following steps: establishing a mathematical model of pumping power and gain fiber length, and when the pumping power is increased from low power to preset power, adjusting the chirp amount of a chirp fiber grating through a temperature tuning device, and performing pre-chirp management on signal light input into a multimode gain fiber; under high pumping intensity, the initial chirp amount of signal light is optimized, so that the signal light entering the multimode gain optical fiber is in a negative chirped pulse state, the self-phase modulation and dispersion effect of the signal light when the signal light is amplified in the multimode gain optical fiber is balanced, and the stimulated Raman scattering and self-focusing phenomena are avoided; and the compressed pulse width is used as a feedback signal to realize the optimal matching of the signal light energy and the pulse width.

The application belongs to the technical field of semiconductor optoelectronic devices, and particularly relates to a kind of integrated SOA compensation displacement grating DBR wide tuning laser system, comprising: gain chip area, for providing laser gain;Displacement grating DBR reflection area, optically coupled with gain chip area, constitutes DBR main laser cavity;Double micro-ring resonator module, comprising first micro-ring resonator and second micro-ring resonator;The radius of first micro-ring resonator and second micro-ring resonator is different, and wavelength selection is carried out on the output light of main cavity through vernier effect;Sagnac ring feedback structure, optically coupled with double micro-ring resonator module, for feeding back selected wavelength optical signal to gain chip area;Semiconductor optical amplifier, set outside main cavity, for power compensation of external cavity optical signal and optical signal fed back to laser main cavity.The scheme can realize wide tuning, high stability, low insertion loss single-mode laser output through precise regulation and control of displacement grating, combined with double micro-ring vernier mode selection, Sagnac locking and SOA compensation.

The present invention relates to the technical field of semiconductors and discloses a side-emitting single-mode laser with a waveguide having an oxidized aperture hole and its manufacturing process, which prepares an oxidized aperture hole as an optically limited waveguide structure of a single-mode laser, wherein the partially insulated oxidized aperture hole limits the current injection window, which leads to a high current injection efficiency and a low leakage current of the device, while at the same time the side walls of the waveguide have lower scattering losses, which leads to a more pronounced suppression of higher modes and promotes the realization of a high-power single-mode laser with extremely low threshold current density.In the present invention, a structure with a surface grating is also introduced, thereby enabling the design of a single-mode laser with a high grating coupling coefficient, wherein the preparation process is simple, reliable and highly reproducible, which avoids complex secondary epitaxy processes, thereby reducing the risk of chamber contamination and promoting the reproducible preparation of high-quality gratings, thus enabling the realization of multi-wavelength arrays.

The present invention relates to a system of multiple single-mode laser sources, having: - a multi-mode laser source (14) for generating a multi-mode light beam (LBMM) ,- at least one mode filter (175, 175', 175") which filters a single-mode light beam (LBSM, LBSM', LBSM") out of a multi-mode light beam (LBMM, LBMM', LBMM") and allows a remaining light beam (LBR, LBR', LBR") to pass, and - at least one light mixer (176, 176', 176") to which the remaining light beam (LBR, LBR', LBR") is supplied and which generates a mode-mixed multi-mode light beam (LBMM', LBMM").

The application belongs to the technical field of semiconductor photoelectric devices, and particularly relates to a semiconductor laser element with a strain-induced exciton response layer, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer, wherein the upper waveguide layer and the electron blocking layer are provided with the strain-induced exciton response layer; the strain-induced exciton response layer is one of KV3Sb5, WSe2, ReO3, RbV3Sb5, CsV3Sb5 and KSbO3 or a combination of two or more thereof; the strain-induced exciton response layer is created by applying a local strain to the interface between the active layer and the upper waveguide layer and / or the lower waveguide layer, creating a strain field, changing the electron anisotropy, eliminating the sub-bandgap emission state of the spectrum overlap of the strain-induced exciton response layer, inhibiting the mode jump in the vertical direction, generating a single-mode laser, obtaining a good FFP far-field pattern, enhancing the exciton response of the active layer, reducing the driving voltage and excitation threshold of the laser element, enhancing the confinement factor, and improving the optical power and slope efficiency of the laser element.

An optical system for a laser system for laser cutting includes a light guide for simultaneously coaxially transporting a first laser beam as a single-mode or quasi-single-mode laser beam and a second laser beam as a multi-mode laser beam, and an optical device arranged in a beam path of the first laser beam downstream of the light guide. The optical device is configured to impose a phase singularity and / or a polarization singularity on the first laser beam for generating an annular intensity distribution of the first laser beam with a central intensity minimum on an optical axis of the optical system.

This invention discloses a method and system for macroscopic forming control in high-power single-mode laser welding, belonging to the field of laser welding quality monitoring and control technology. The method first establishes a complete quadratic polynomial mapping model between weld penetration depth and laser power, welding speed, and defocusing amount based on process experiments. Through time-scale analysis, a dimensionless number S is defined to characterize the relative magnitude of the evaporation and heat conduction effects at the top and bottom of the keyhole, establishing a keyhole stability criterion. Based on the threshold range of S and the penetration depth model, a process window for good macroscopic forming is defined. In actual welding, the S value is calculated according to process parameters, and combined with the process window, rapid judgment of weld forming quality is achieved. The dimensionless number S criterion provided by this invention quantitatively reflects keyhole stability from a physical mechanism perspective, avoiding the blindness of traditional empirical methods, and can efficiently achieve process parameter control, improving the forming quality and process development efficiency of thick plate laser welding.

The invention provides an MOCVD (Metal Organic Chemical Vapor Deposition) process multi-parameter synchronous detection method, system and equipment and a storage medium, and relates to the technical field of semiconductor detection. Single-mode laser is divided into object light and reference light, and the reference light is utilized to form a spherical reference wave through point diffraction; the object light and the spherical reference wave coincide in the space near the semiconductor surface to form stable interference fringes; a phase distribution diagram and a contrast distribution diagram are synchronously extracted from each frame of interference image, and multi-parameter synchronous decoupling and inversion are carried out under a unified data source and space reference system; therefore, in-situ, real-time and full-field synchronous acquisition and correlation analysis of the morphology, temperature and optical reflection characteristics of the semiconductor can be realized under the conditions of MOCVD high-temperature intense radiation and semiconductor rotation, the problems of time-space asynchronization and information splitting caused by multiple sets of independent monitoring systems are avoided, the system integration and calibration complexity is reduced, and the system reliability is improved. And meanwhile, a uniform, accurate and comprehensive data basis is provided for process optimization.

The invention discloses a single-mode laser material based on a multilayer structure in glass and a preparation method of the single-mode laser material. The single-mode laser material is of a glass-amorphous-crystal multi-layer composite structure and is composed of a glass matrix and an internal amorphous-crystal structure, and each amorphous-crystal structure comprises an amorphous shell and an internal crystal material. The preparation method comprises the following steps: weighing glass precursor powder, grinding, mixing, melting, sintering and quenching to obtain initial microcrystalline glass, putting the initial microcrystalline glass into a low-temperature muffle furnace, regulating the temperature, carrying out heat treatment, and rapidly cooling to obtain the glass ceramic. According to the method, large-size perovskite nanocrystals with high crystal quality are separated out in the glass, so that a glass network matrix is not damaged while a single large crystal separated out from a glass grid is fully melted; and moreover, the components of the perovskite nanocrystalline melt are regulated and controlled, the light scattering of the sample is enhanced, the laser material cost is low, the process is simple, the laser wavelength is adjustable, and the coherence is low.

The invention discloses a high-precision photocuring 3D printing device and method based on a rare earth up-conversion material. The device comprises a single-mode laser light source, a half-wave plate, a polarization beam splitter, a dichroscope, an objective lens and a high-precision three-axis displacement table. Near-infrared light emitted by the single-mode laser light source is subjected to light intensity adjustment through the half-wave plate and the polarization beam splitter, and light emitted by the polarization beam splitter is subjected to beam expansion and is reflected by the dichroscope to enter the objective lens to be focused on the high-precision three-axis displacement table. A liquid sample doped with a rare earth up-conversion material is arranged on the high-precision three-axis displacement table, polymerization of the liquid sample is achieved by controlling movement of the high-precision three-axis displacement table, and 3D printing is completed. Through the nonlinear luminescence characteristic of the rare earth upconversion material, the light source part excites and induces the material to polymerize, and the polymerization size is lower than the optical diffraction limit of a light spot and breaks through the optical diffraction limit.

The utility model relates to an interference type pressure sensing system based on a multimode optical fiber network, which belongs to the technical field of optical sensing and solves the problems of high manufacturing cost and complex structure of the existing optical fiber pressure sensing technology. When a slight pressure signal is transmitted to the multi-mode optical fiber network through the upper cover plate or the lower cover plate, the multi-mode optical fiber network deforms, the deformation causes mode interference change in the multi-mode optical fiber and changes an optical transmission mode, an output optical signal is transmitted to the photoelectric detector through the second single-mode optical fiber, the optical signal is converted into an electric signal, and the electric signal is transmitted to the photoelectric detector through the second single-mode optical fiber. By acquiring and processing the output electric signals, slight pressure change on the whole cover plate surface can be obtained, along with the increase of the number of the grids, the higher the sensitivity of the multimode optical fiber network is, the better the pressure sensing effect is, and the multimode optical fiber network can be used for monitoring slight pressure signals.

The invention relates to the technical field of semiconductor development, in particular to a high-power single-mode VCSEL (vertical cavity surface emitting laser) chip and a manufacturing method thereof. The bottom layer structure comprises a substrate, a buffer layer, an N-type electrode, an N-type DBR layer and a multi-strain quantum well light-emitting region from bottom to top; the light emitting unit comprises a multi-strain quantum well light emitting region, a P-type DBR region, a P-type ohmic contact layer and a P-type electrode from bottom to top. The P-type DBR region is provided with a group of oxidation holes and corresponding light outlets; light beams output by each light emitting unit work in a single mode. According to the invention, a plurality of small-size single-mode light outlets are integrated on a single chip, and single-mode light beams output by all the light emitting units are parallel and are combined into a single-mode output light beam through a coherent effect, so that high-power and high-beam-quality single-mode laser output is realized under the condition that a complex external system is not introduced.

The invention relates to a method for ablating laser machining of workpieces (18) using a laser beam (14), wherein the laser beam (14) has a beam diameter (24) and a beam edge (26) with a beam edge diameter (28) in a focal plane, wherein the laser beam (14) is generated using a single-mode laser with a beam parameter product less than or equal to 0.6 mm*mrad, and wherein the beam edge diameter (28) is equal to or greater than 60% of the beam diameter (24).

The invention relates to the technical field of vertical cavity surface emitting lasers, in particular to a high-power single-mode laser structure based on multiple photon filtering layers, which comprises a substrate layer, a DBR (distributed bragg reflector) is arranged on the substrate layer, and an active area is embedded in the DBR; a plurality of photon filtering layers are embedded in the DBR, and the photon filtering layers are in integrated distribution of a central low-refractive-index area and a peripheral high-refractive-index area in the transverse direction, so that high-side-mode-rejection-ratio single-mode output under a large aperture is realized; a plurality of large-aperture oxidation limiting layers are embedded in the DBR and used for limiting a current injection area and improving the electric heating performance of the device. According to the VCSEL device, high side mode rejection ratio, high-power single-mode output and excellent thermal stability can be achieved under the working condition of room-temperature continuous waves, the whole manufacturing process is simple and controllable, repeatability is high, and the VCSEL device is suitable for large-scale manufacturing.

The application provides a kind of MOCVD process multi-parameter synchronous detection method, system, equipment and storage medium, it is related to semiconductor detection technical field, the application is by being divided into object light and reference light to single mode laser, and using reference light is diffraction to form spherical reference wave, so that object light and spherical reference wave are coincided in the space near semiconductor surface to form stable interference fringe;Again, the phase distribution graph and contrast distribution graph are extracted synchronously for each frame of interference image, and multi-parameter synchronous decoupling and inversion are carried out under unified data source and space reference system, so that in situ, real-time, full-field synchronous acquisition and correlation analysis of semiconductor morphology, temperature and optical reflection characteristics can be realized under the condition of MOCVD high temperature and strong radiation and semiconductor rotation, avoid the time and space asynchronization and information fragmentation problem caused by multiple independent monitoring systems, reduce the complexity of system integration and calibration, while providing unified, accurate and comprehensive data basis for process optimization.

The invention relates to a laser system (1), an optical device (7) for the laser system and a method for operating the laser system (1) for machining a workpiece (2). The optics (7) comprise a light guide (5) for simultaneously and coaxially transmitting a first laser beam (18) as a single-mode or quasi-single-mode laser beam (18) and a second laser beam (21) as a multi-mode laser beam (21). The optics (7) further comprise optical means (14) arranged in the beam path of the first laser beam (18) for applying a phase singularity and / or a polarization singularity on the first laser beam (18) for generating an annular intensity distribution (18) of the first laser beam (18) having a central intensity minimum (19) on the optical axis (13) of the optics (7).

A detection system for a vehicle includes an imaging device configured to capture an image of an interior surface of the vehicle. An illumination assembly includes an array of laser diodes each configured to project an illumination, each laser diode is configured as at least one of a single mode laser or a vertical-cavity surface-emitting laser (“VCSEL”). An optical element is proximate to the array of laser diodes and includes a collimation element for guiding the illumination to form at least one light spot. A processor is in communication with the imaging device and the illumination assembly. The processor is configured to communicate a signal to operate the array of laser diodes and process the image of the interior surface to detect at least one of a change in a location or a speckle content of the at least one spot.

The application provides a kind of single-mode 660nm semiconductor laser device of superlattice structure and its preparation method, belongs to the field of optoelectronic technology, adopts multilayer epitaxial structure, from bottom to top includes GaAs substrate and buffer layer, segmented lower confinement layer and lower waveguide layer, multi-quantum well active region, AlInP / GaP superlattice, upper waveguide layer and segmented upper confinement layer, and band gap transition layer and GaAs cap layer. The preparation method covers substrate processing, buffer layer growth, V group source switching, confinement layer and waveguide layer epitaxy, multi-quantum well and superlattice structure growth, and cap layer deposition and other processes. Through the superlattice structure and the segmented design of the confinement layer, the hole injection efficiency and the carrier confinement ability are improved, and the high temperature working characteristics of the device are effectively improved. The stable output of single-mode laser in 660nm waveband is realized, and the reliable power output of 120mW can be maintained at 60℃ high temperature environment, and it also has low loss, high conversion efficiency and excellent photoelectric performance.

A kind of micro angle measurement device and method based on local interference fringe, belong to the field of precision optical assembly and detection technology, including lens to be installed, resonant cavity, clamping assembly, resonant cavity mounting seat, single-mode laser light source, optical fiber, autocollimator, light splitting component, reflective image mirror, imaging assembly and image acquisition component, single-mode laser light source is transmitted to autocollimator by optical fiber, autocollimator exports parallel light, is irradiated to the film gap formed between lens to be installed and resonant cavity mounting surface by light splitting component and reflective image mirror, local interference fringe image is collected by imaging assembly and image acquisition component after being turned over by reflective image mirror, and is transmitted to external data processing component to carry out angle resolution.The present application can realize the non-contact measurement of local interference fringe under the condition of clamping obstruction and narrow space, and complete two-axis micro angle deviation detection, suitable for online detection and attitude adjustment in the process of precision optical element mounting.

This application discloses a dynamically reconfigurable laser and its control method based on topological photonics, belonging to the field of integrated photonics and semiconductor laser technology. It includes: a micro-ring array, a phase modulator integrated into the inter-lattice coupling region, an external control system connected to the phase modulator via electrode pads, a programmable pump source, and an output coupler. The external control system independently controls the phase delay introduced by each phase modulator, dynamically adjusting the spatial distribution of the artificial gauge field applied to the micro-ring array, constructing topological domain walls in real time at the target location and locally generating a topological zero mode. The pump spot output from the programmable pump source is shaped and aligned to cover the spatial distribution region of the zero mode for selective optical pumping, causing the zero mode to be stimulated to generate laser light, which is then output from the output coupler. This application achieves highly stable single-mode laser output with online adjustable lasing position and reconfigurable modes through the synergy of electrically controlled domain wall reconstruction and optically controlled selective pumping.