33 results about "Erbium doping" patented technology

A self-powered optical amplifier (SPOA) may include a proximal tap connected to a fiber optic cable, a proximal wavelength division multiplexer (WDM) optically connected to the proximal tap, and an Erbium doped fiber optically connecting the proximal WDM to a distal WDM. The SPOA may further includes a distal tap optically connected to the distal WDM, a pump optically connected to the distal WDM, and a controller optically connected to the proximal tap, the distal tap, and further electrically connected to the pump and a power supply.

The invention belongs to the technical field of semiconductor photocatalyst preparation and environmental protection, and discloses a preparation method and application of an erbium-doped hollow tubular g-C3N4 photocatalyst (Er-CN). The preparation method comprises the following steps: firstly, preparing a catalyst precursor by taking melamine and erbium acetate as raw materials by adopting a hydrothermal synthesis method, and then preparing the erbium-doped hollow tubular g-C3N4 photocatalyst (Er-CN) by adopting a high-temperature calcination method. The preparation method is simple in equipment and convenient to operate, and materials are easy to obtain and low in cost. The prepared photocatalyst has a very good effect in the aspect of coordinating with persulfate to treat pollutants in a water body, so that the photocatalyst has a good application prospect and value in the field of environmental wastewater treatment.

The invention discloses an erbium-doped zinc selenide composite material as well as a preparation method and application thereof. The preparation method comprises the following steps: dissolving zinc nitrate hexahydrate and erbium nitrate hexahydrate in deionized water, wherein the molar ratio of erbium ions in the zinc nitrate hexahydrate is 0.02-0.08; adding sodium selenite and sodium hydroxide; adding a reducing agent hydrazine hydrate; after hydrothermal reaction for h, washing and drying to obtain the erbium-doped zinc selenide composite material. The material is of a cubic phase ZnSe structure, erbium is uniformly doped in crystal lattices, and the material is in a nearly spherical particle shape. Rich 4f electronic defect states are introduced into a ZnSe band gap through erbium doping, charge transfer (chemical enhancement) is remarkably promoted, the free carrier concentration is improved to excite localized surface plasma resonance (electromagnetic enhancement), and the synergistic effect of two enhancement mechanisms is achieved. The detection limit of the SERS substrate to methylene blue is as low as 3.24 * 10 <-8 > mol / L, the enhancement factor is as high as 1.73 * 10 < 4 >, and a new way is provided for environmental pollutant monitoring.

The invention relates to the technical field of lithium ion batteries, and discloses a lithium vanadium phosphate positive electrode material and a preparation method and application thereof, the lithium vanadium phosphate positive electrode material is an erbium-doped Li3V2 (PO4) 3 / C material, the structural formula of the lithium vanadium phosphate positive electrode material is Li3V2-xErx (PO4) 3 / C, and x is more than 0 and less than or equal to 0.12. The preparation method of the lithium vanadium phosphate positive electrode material comprises the following steps: (1) mixing lithium dihydrogen phosphate, a vanadium source, an erbium source and a carbon source to obtain a mixture; (2) carrying out ball milling on the mixture, and then carrying out drying treatment to obtain a dried material; and (3) sintering the dried material to obtain the lithium vanadium phosphate positive electrode material. According to the invention, the Li3V2 (PO4) 3 / C material is used as a basis and is doped with the erbium element to obtain the Li3V2-xErx (PO4) 3 / C material, and the erbium-doped Li3V2 (PO4) 3 / C material does not influence the crystal structure, the morphology, the particle size and the like, and can effectively improve the electronic conductivity, the specific discharge capacity and the cycling stability of the Li3V2 (PO4) 3 / C material, so that the Li3V2 (PO4) 3 / C material has better electrochemical performance.

A system including an erbium doped fiber amplifier (EDFA), comprising a length of erbium doped fiber having a first end and a second end, an isolator wavelength division multiplexer (IWDM) comprising an output optically connected at an optical connection with the first end of the erbium doped fiber, wherein the optical connection with the first end of the erbium doped fiber is continuous between the IWDM and the first end of the erbium doped fiber, and an isolator comprising an input optically connected at an optical connection with the second end of the erbium doped fiber.

The invention provides a long-distance FBG sensing system based on a tunable erbium-ytterbium co-doped random fiber laser, and relates to the technical field of fiber laser and fiber sensing. The device specifically comprises a tunable erbium-ytterbium co-doped random fiber laser, a 10: 90 coupler, a circulator, a wavelength division multiplexer, a fiber loop mirror, an ytterbium-doped random fiber laser, a first single-mode fiber, an erbium-doped fiber, a sensing FBG, a broadband FBG, a photoelectric detector and an oscilloscope. According to the invention, the erbium-ytterbium co-doped random fiber laser is used as a detection light source of the COTDR, so that the influence of time delay characteristics on the detection precision can be eliminated; secondly, a novel high-order hybrid amplification technology combining high-order random fiber laser amplification with remote pump erbium-doped fiber amplification is adopted, and the problem that the distance of an FBG sensing system is not long enough can be solved; meanwhile, the sensing capacity of the system is further improved by combining a time division multiplexing and wavelength division multiplexing mixed FBG multiplexing mode with dual-wavelength differential operation.

This invention belongs to the field of crystal growth technology and discloses an erbium-doped bismuth silicate laser crystal and its preparation method. The features are: (1) The bismuth silicate laser crystal is a laser material, with erbium ions incorporated in the form of Er₂O₃, enabling the crystal to achieve a laser output of 1.54µm. The doping amount is 0.5~2 at.%, and the molecular formula of the bismuth silicate crystal is Bi₄Si₃O₃. 12 (2) Select high-purity SiO2 and Bi2O3 raw materials, mix them according to the stoichiometric ratio, and prepare Bi4Si3O by solid-state sintering. 12 Polycrystalline material, then doped with Bi4Si3O according to the stated doping amount. 12 Er₂O₃ is added to polycrystalline material, mixed evenly, and sintered to obtain erbium-doped Bi₄Si₃O₃. 12 (3) Select bismuth silicate seed crystal, fix the seed crystal at the seed well part at the bottom of the crucible, load the doped polycrystalline material into the crucible and seal it, move it into the ceramic tube, place it in the zone furnace, heat up, keep warm, and after seeding, grow at a certain rate to obtain erbium-doped high-output bismuth silicate laser crystal material.

A method of implementing a stretched single optical communication span includes receiving one or more optical signals from an optical fiber span having high loss; adding a pilot signal to the one or more optical signals, subsequent to the receiving; and amplifying the one or more optical signals and the pilot signal with a pre-amplifier that is an Erbium Doped Fiber Amplifier (EDFA). Advantageously, the stretched single span operates below a Hazard 1M environment. A node in a stretched single optical communication span includes an optical multiplexer connected to an optical fiber span having high and a pilot signal, and configured to output a combination of one or more optical signals from the optical fiber span and the pilot signal; and a pre-amplifier that is an EDFA configured to receive the output of the optical multiplexer and provide amplification of the one or more optical signals and the pilot signal.

A rare earth doped single crystal diamond showing photoluminescence using off-resonant excitation at 853 nm and having a full width half maximum spectral linewidth at 1508 nm of less than 1.0 nm. There is also disclosed a method of producing rare earth doped single crystal diamond. A single crystal diamond is provided, and a rare earth metal is implanted into the single crystal diamond using ion implantation. The implanted single crystal diamond is then annealed at a pressure of at least 5 GPa and a temperature of at least 1600°C.

A self-powered optical amplifier (SPOA) may include a proximal tap connected to a fiber optic cable, a proximal wavelength division multiplexer (WDM) optically connected to the proximal tap, and an Erbium doped fiber optically connecting the proximal WDM to a distal WDM. The SPOA may further includes a distal tap optically connected to the distal WDM, a pump optically connected to the distal WDM, and a controller optically connected to the proximal tap, the distal tap, and further electrically connected to the pump and a power supply.

To provide an erbium doped fiber optical amplifier with an adaptive filter.SOLUTION: According to an aspect of a certain embodiment, an optical signal and an optical pump signal may be acquired and multiplexed onto an erbium doped optical fiber. An optical fiber may be configured to perform amplification of an optical waveform within a first wavelength range. A signal in the first wavelength range of the optical signal may be amplified using the optical fiber. In some embodiments, a bend radius of a bend in a fiber-based filter may be adjusted such that the filter is configured to attenuate a signal within a second wavelength range. The filter is configured to attenuate the optical waveform for a wavelength range that varies depending on the bend radius of the bend in the filter. The second wavelength range may include wavelengths longer than the first wavelength range. The signal in the second wavelength range may be attenuated using the filter bent at the bend radius.SELECTED DRAWING: Figure 1D

The invention discloses a high-responsivity broadband Van der Waals heterojunction photoelectric detector and a preparation method thereof, and belongs to the technical field of semiconductor photoelectric devices. The detector comprises a bearing substrate, an erbium-doped tungsten disulfide single-layer film, a molybdenum ditelluride nanosheet and a metal electrode from bottom to top. The preparation method comprises the following steps: growing an erbium-doped tungsten disulfide film by adopting a chemical vapor deposition method; mechanically stripping to obtain a molybdenum ditelluride nanosheet; an erbium-doped tungsten disulfide / molybdenum ditelluride vertical heterojunction is constructed through a micro-area fixed-point dry transfer technology; and finally, manufacturing the electrode by adopting a micro-nano machining process. The intrinsic defect of tungsten disulfide is effectively passivated through erbium doping, efficient separation and transportation of photon-generated carriers are synergistically realized by combining with a Type-II energy band alignment heterojunction formed by molybdenum ditelluride, dark current is greatly inhibited, the detector has broadband from visible light to near-infrared light and high-sensitivity detection capability, and the detector can be applied to the field of visible light detection and near-infrared light detection. The method has important application value in the fields of integrated optoelectronic chips, multispectral sensing and the like.

According to an aspect of an embodiment, a hybrid optical amplifier may include an erbium doped fiber amplifier (EDFA) that includes multiple EDFA stages. The hybrid optical amplifier may also include a Raman amplifier inserted between two of the EDFA stages.

A user device for monitoring a physical condition of a user, such as a heart rate or blood oxygen level, includes an erbium doped glass component and a light source. The light source is configured to generate light equal to an excitation frequency of the erbium doped glass. The erbium doped glass component is configured to generate, through photoluminescence, one or more peaks of higher intensity light corresponding to a wavelength which can be used to monitor a physical condition of a user. The amplified light is sent to the user and received back at a photodetector, which can then algorithmically determine a physical condition of a user.

Techniques for improving gain equalization in C- and L-band (“C+L”) erbium-doped fiber amplifier (EDFAs) are provided. For example, the C- and L-band amplification sections of a C+L EDFA may be separated and configured in a parallel arrangement or a serial arrangement. For both the parallel and serial arrangements, the C- and L-band amplification sections may share a common gain flattening filter (GFF) or each amplification section may include and employ a separate GFF. Moreover, in some examples, an “interstage” L-band GFF may be located before or upstream of the L-band amplification section such that the L-band optical signal is gain-equalized or flattened prior to the L-band amplification section amplifying the L-band.

Fiber amplifiers for extending their gain bandwidth through an optimization of the host matrix using phosphorus / aluminum (P / Al) as glass modifier are provided. In one aspect, an optical glass fiber comprising an Erbium doped silicate is provided, where the optical glass fiber comprises P2O5 of greater than 6 mol %; and Al2O3 of between 1.5 and 6 mol %, where a molar percent ratio of the P2O5 and the Al2O3 is between 2 and 4. Further, in some cases, use of yttrium as an alternative co-dopant to ytterbium may be used.

The invention provides a chromium telluride germanide saturable absorber-based bright and dark soliton fiber laser, which relates to the technical field of fiber lasers and comprises a pump light source module for providing pump light and coupling the pump light into a laser resonant cavity through a wavelength division multiplexer; and the laser resonant cavity module comprises a wavelength division multiplexer, an erbium-doped fiber, a polarization controller, a polarization independent isolator, a single-mode fiber, a chromium telluride germanium saturable absorber and an output coupler which jointly form a laser oscillation and amplification environment. Parameters are dynamically adjusted through fuzzy control and monitored and analyzed in real time, comprehensive monitoring, evaluation and optimization of the laser performance are achieved in combination with the performance evaluation and optimization module, and the stability, efficiency and spectral purity of the laser are improved.

A rare earth doped single crystal diamond showing photoluminescence using off-resonant excitation at 853 nm and having a full width half maximum spectral linewidth at 1508 nm of less than 1.0 nm. There is also disclosed a method of producing rare earth doped single crystal diamond. A single crystal diamond is provided, and a rare earth metal is implanted into the single crystal diamond using ion implantation. The implanted single crystal diamond is then annealed at a pressure of at least 5 GPa and a temperature of at least 1600°C.

According to an aspect of an embodiment, an erbium doped fiber amplifier (EDFA) may include a first EDFA stage configured to amplify a first wavelength range, a second wavelength range, and a third wavelength range. The EDFA may also include a filter stage configured to receive optical signals amplified by the first EDFA stage and attenuate the second wavelength range less than a gain applied to the second wavelength range by the first EDFA stage. In addition, the EDFA may include a second EDFA stage configured to receive the optical signals after the optical signals have passed through the filter stage. The second EDFA stage may also be configured to amplify the first wavelength range, the second wavelength range, and the third wavelength range.

The invention discloses a heterogeneous integrated waveguide amplifier and an integration method. The waveguide amplifier comprises an end face coupler, a silicon-erbium-doped lithium niobate heterogeneous waveguide, a low-loss adiabatic conical coupler and an Euler bent waveguide. The silicon-based waveguide forms an end face coupler and an Euler bending waveguide; the silicon-erbium-doped lithium niobate heterogeneous waveguide forms an amplification waveguide and a low-loss adiabatic conical coupler. The integration method comprises the following steps: etching a silicon wafer to form a silicon-based waveguide; and the silicon-erbium-doped lithium niobate heterogeneous waveguide is formed by bonding an erbium-doped lithium niobate wafer. Erbium-doped lithium niobate is used as a gain medium to realize on-chip C-waveband signal light amplification; the waveguide amplifier is formed through the silicon-erbium-doped lithium niobate heterogeneous waveguide, etching of lithium niobate is avoided, and therefore the waveguide amplifier is compatible with the CMOS technology. Flexible heterogeneous integration between an active material and a passive material is realized through a bonding process from an erbium-doped lithium niobate wafer to a silicon wafer. By flexibly amplifying the on-chip signal light, the invention has important significance for realizing large-scale integration in the future.

The invention discloses a C + L + U hybrid doped optical fiber and an amplifier. An optical fiber core comprises a first doping system, an isolation system and a second doping system in sequence from inside to outside; the first doping system and the second doping system are respectively one of a bismuth doping system and an erbium doping system, and are physically separated through an isolation system; the amplifier relates to one unit or two units, and when one unit is used, the mixed doped optical fiber is matched with a C + L + U broadband light source to realize full-band amplification; for the two units, the erbium-doped optical fiber and the bismuth-doped optical fiber are used for series connection, combination and amplification respectively, the erbium-doped optical fiber amplifies C + L wave band signal light, and the bismuth-doped optical fiber amplifies L + U wave band signal light. The structure is simple, the erbium-bismuth co-doping problem is solved through the layered doping design, and the advantages of being low in cost, compact in structure and wide in gain bandwidth are achieved.

The application discloses a Brillouin gain assisted on-chip erbium-doped laser, which comprises a micro-ring resonator, a first tapered waveguide, a second tapered waveguide and a spiral waveguide, wherein the micro-ring resonator and the first tapered waveguide are made of an erbium-doped silicon nitride waveguide, and the second tapered waveguide and the spiral waveguide are made of a chalcogenide material; the micro-ring resonator comprises a coupling waveguide which is used for coupling pump light emitted by an erbium-doped laser into the micro-ring resonator, outputting laser signals generated after the pump light is coupled into the micro-ring resonator and sequentially passing through the first tapered waveguide, the second tapered waveguide and the spiral waveguide, and outputting amplified laser signals; and the tip of the first tapered waveguide is coupled and connected with the tip of the second tapered waveguide. The application realizes high-output-power laser signals by using a composite device composed of a cascaded micro-ring resonator of an erbium-doped silicon nitride and a waveguide of a passive chalcogenide material.

The invention discloses a non-transfer rare earth doped tungsten diselenide heterojunction photoelectric device and a preparation method thereof, and belongs to the technical field of semiconductor photoelectric devices. The method comprises the following steps: carrying out cleaning and hydrofluoric acid activation treatment on a silicon substrate on a silicon-based insulator; the preparation method comprises the following steps: taking tungsten trioxide, erbium chloride, sodium chloride and selenium as precursors through a one-step chemical vapor deposition method, growing a single crystal erbium-doped tungsten diselenide film on an activated substrate silicon surface in an in-situ epitaxial growth manner, and directly constructing an erbium-doped tungsten diselenide / silicon Van der Waals heterojunction; and finally, preparing the electrode through photoetching, developing, metal deposition and stripping processes. According to the method, interface pollution caused by a traditional transfer process is thoroughly avoided, and high-concentration uniform erbium doping is realized by using a sodium chloride fluxing agent. The prepared heterojunction device has an atomic-scale clean interface and shows excellent photoelectric performance, the process is compatible with a complementary metal oxide semiconductor process, and a reliable platform is provided for high-performance silicon-based photoelectric integration.

A rare earth doped single-crystal diamond showing photoluminescence using off-resonant excitation at 853nm and having a full width at half maximum spectral linewidth at 1508nm of less than 1.0nm and a

The application discloses an erbium-doped zinc selenide composite material and a preparation method and application thereof. The preparation method comprises the following steps: dissolving zinc nitrate hexahydrate and erbium nitrate hexahydrate with a molar ratio of 0.02-0.08 in deionized water; adding sodium selenite and sodium hydroxide; then adding a reducing agent, hydrazine hydrate; after hydrothermal reaction for h, washing and drying to obtain the erbium-doped zinc selenide composite material. The material is a cubic phase ZnSe structure, and the erbium is uniformly doped in the crystal lattice in a near-spherical particle shape. The application introduces rich 4f electron defect states in the ZnSe band gap by erbium doping, significantly promotes charge transfer (chemical enhancement), and improves the free carrier concentration to excite the localized surface plasmon resonance (electromagnetic enhancement), so that the synergistic effect of the two enhancement mechanisms is realized. The detection limit of the SERS substrate for methylene blue is as low as 3.24*10 ‑8 mol / L, and the enhancement factor is as high as 1.73*10 4 , which provides a new way for environmental pollutant monitoring.

The invention discloses an erbium-doped silicon nitride film and a preparation method thereof, and a photonic integrated device and a preparation method thereof. According to the invention, heterogeneous integration can be avoided fundamentally, and concentration quenching can still be effectively inhibited under high doping concentration.

In some implementations, an optical amplifier system includes a variable gain optical amplifier that is an erbium doped fiber amplifier. The variable gain optical amplifier may provide a first gain stage for an optical signal. The optical amplifier system may include a fixed gain optical amplifier that is an erbium-ytterbium doped fiber amplifier. The fixed gain optical amplifier may provide a second gain stage for the optical signal following the first gain stage.

This invention discloses a dual-core erbium-doped optical fiber for simultaneous amplification of C-band and L-band signals, relating to the field of erbium-doped optical fiber technology. The fiber includes a first core, a second core, and an outer cladding. The erbium doping concentration of the first core, used for C-band amplification, differs from that of the second core, used for L-band amplification. The outer cladding surrounds the first and second cores. The first and second cores constitute a single-mode dual-core optical fiber structure. This invention achieves amplification of C-band and L-band signal light within the same erbium-doped optical fiber by using first and second cores with different erbium doping concentrations.

The invention discloses a 2.8 micron pulse erbium-doped ZBLAN optical fiber laser based on external gain modulation, which comprises a pumping source, an ASE light source, a light beam processing part, a double-cladding erbium-doped ZBLAN gain optical fiber, a light beam processing assembly and a high reflection mirror, and is characterized in that the output ends of the pumping source and the ASE light source are connected with one end of the double-cladding erbium-doped ZBLAN gain optical fiber through the light beam processing part, and the other end of the double-cladding erbium-doped ZBLAN gain optical fiber is connected with the light beam processing assembly; light beams output by the pumping source and the ASE light source are combined through the light beam processing part and then enter the double-cladding erbium-doped ZBLAN gain optical fiber, and the other end of the double-cladding erbium-doped ZBLAN gain optical fiber is connected with the high-reflection mirror through the light beam processing assembly. The pumping source is a pumping source with the wavelength of 976nm; the ASE light source is a 1973nm ASE light source which is stable in wavelength, tunable and high in power. According to the 2.8-micron pulse erbium-doped ZBLAN fiber laser based on external gain modulation, stable pulse output is realized by changing population inversion of active ions, and the 2.8-micron pulse erbium-doped ZBLAN fiber laser has the advantages of stable pulse output, high output performance and good stability.