16 results about "Erbium doping" patented technology

The invention discloses an erbium-doped zinc selenide composite material as well as a preparation method and application thereof. The preparation method comprises the following steps: dissolving zinc nitrate hexahydrate and erbium nitrate hexahydrate in deionized water, wherein the molar ratio of erbium ions in the zinc nitrate hexahydrate is 0.02-0.08; adding sodium selenite and sodium hydroxide; adding a reducing agent hydrazine hydrate; after hydrothermal reaction for h, washing and drying to obtain the erbium-doped zinc selenide composite material. The material is of a cubic phase ZnSe structure, erbium is uniformly doped in crystal lattices, and the material is in a nearly spherical particle shape. Rich 4f electronic defect states are introduced into a ZnSe band gap through erbium doping, charge transfer (chemical enhancement) is remarkably promoted, the free carrier concentration is improved to excite localized surface plasma resonance (electromagnetic enhancement), and the synergistic effect of two enhancement mechanisms is achieved. The detection limit of the SERS substrate to methylene blue is as low as 3.24 * 10 <-8 > mol / L, the enhancement factor is as high as 1.73 * 10 < 4 >, and a new way is provided for environmental pollutant monitoring.

The invention relates to the technical field of lithium ion batteries, and discloses a lithium vanadium phosphate positive electrode material and a preparation method and application thereof, the lithium vanadium phosphate positive electrode material is an erbium-doped Li3V2 (PO4) 3 / C material, the structural formula of the lithium vanadium phosphate positive electrode material is Li3V2-xErx (PO4) 3 / C, and x is more than 0 and less than or equal to 0.12. The preparation method of the lithium vanadium phosphate positive electrode material comprises the following steps: (1) mixing lithium dihydrogen phosphate, a vanadium source, an erbium source and a carbon source to obtain a mixture; (2) carrying out ball milling on the mixture, and then carrying out drying treatment to obtain a dried material; and (3) sintering the dried material to obtain the lithium vanadium phosphate positive electrode material. According to the invention, the Li3V2 (PO4) 3 / C material is used as a basis and is doped with the erbium element to obtain the Li3V2-xErx (PO4) 3 / C material, and the erbium-doped Li3V2 (PO4) 3 / C material does not influence the crystal structure, the morphology, the particle size and the like, and can effectively improve the electronic conductivity, the specific discharge capacity and the cycling stability of the Li3V2 (PO4) 3 / C material, so that the Li3V2 (PO4) 3 / C material has better electrochemical performance.

This invention belongs to the field of crystal growth technology and discloses an erbium-doped bismuth silicate laser crystal and its preparation method. The features are: (1) The bismuth silicate laser crystal is a laser material, with erbium ions incorporated in the form of Er₂O₃, enabling the crystal to achieve a laser output of 1.54µm. The doping amount is 0.5~2 at.%, and the molecular formula of the bismuth silicate crystal is Bi₄Si₃O₃. 12 (2) Select high-purity SiO2 and Bi2O3 raw materials, mix them according to the stoichiometric ratio, and prepare Bi4Si3O by solid-state sintering. 12 Polycrystalline material, then doped with Bi4Si3O according to the stated doping amount. 12 Er₂O₃ is added to polycrystalline material, mixed evenly, and sintered to obtain erbium-doped Bi₄Si₃O₃. 12 (3) Select bismuth silicate seed crystal, fix the seed crystal at the seed well part at the bottom of the crucible, load the doped polycrystalline material into the crucible and seal it, move it into the ceramic tube, place it in the zone furnace, heat up, keep warm, and after seeding, grow at a certain rate to obtain erbium-doped high-output bismuth silicate laser crystal material.

The invention discloses a high-responsivity broadband Van der Waals heterojunction photoelectric detector and a preparation method thereof, and belongs to the technical field of semiconductor photoelectric devices. The detector comprises a bearing substrate, an erbium-doped tungsten disulfide single-layer film, a molybdenum ditelluride nanosheet and a metal electrode from bottom to top. The preparation method comprises the following steps: growing an erbium-doped tungsten disulfide film by adopting a chemical vapor deposition method; mechanically stripping to obtain a molybdenum ditelluride nanosheet; an erbium-doped tungsten disulfide / molybdenum ditelluride vertical heterojunction is constructed through a micro-area fixed-point dry transfer technology; and finally, manufacturing the electrode by adopting a micro-nano machining process. The intrinsic defect of tungsten disulfide is effectively passivated through erbium doping, efficient separation and transportation of photon-generated carriers are synergistically realized by combining with a Type-II energy band alignment heterojunction formed by molybdenum ditelluride, dark current is greatly inhibited, the detector has broadband from visible light to near-infrared light and high-sensitivity detection capability, and the detector can be applied to the field of visible light detection and near-infrared light detection. The method has important application value in the fields of integrated optoelectronic chips, multispectral sensing and the like.

Techniques for improving gain equalization in C- and L-band (“C+L”) erbium-doped fiber amplifier (EDFAs) are provided. For example, the C- and L-band amplification sections of a C+L EDFA may be separated and configured in a parallel arrangement or a serial arrangement. For both the parallel and serial arrangements, the C- and L-band amplification sections may share a common gain flattening filter (GFF) or each amplification section may include and employ a separate GFF. Moreover, in some examples, an “interstage” L-band GFF may be located before or upstream of the L-band amplification section such that the L-band optical signal is gain-equalized or flattened prior to the L-band amplification section amplifying the L-band.

The invention discloses a C + L + U hybrid doped optical fiber and an amplifier. An optical fiber core comprises a first doping system, an isolation system and a second doping system in sequence from inside to outside; the first doping system and the second doping system are respectively one of a bismuth doping system and an erbium doping system, and are physically separated through an isolation system; the amplifier relates to one unit or two units, and when one unit is used, the mixed doped optical fiber is matched with a C + L + U broadband light source to realize full-band amplification; for the two units, the erbium-doped optical fiber and the bismuth-doped optical fiber are used for series connection, combination and amplification respectively, the erbium-doped optical fiber amplifies C + L wave band signal light, and the bismuth-doped optical fiber amplifies L + U wave band signal light. The structure is simple, the erbium-bismuth co-doping problem is solved through the layered doping design, and the advantages of being low in cost, compact in structure and wide in gain bandwidth are achieved.

The application discloses a Brillouin gain assisted on-chip erbium-doped laser, which comprises a micro-ring resonator, a first tapered waveguide, a second tapered waveguide and a spiral waveguide, wherein the micro-ring resonator and the first tapered waveguide are made of an erbium-doped silicon nitride waveguide, and the second tapered waveguide and the spiral waveguide are made of a chalcogenide material; the micro-ring resonator comprises a coupling waveguide which is used for coupling pump light emitted by an erbium-doped laser into the micro-ring resonator, outputting laser signals generated after the pump light is coupled into the micro-ring resonator and sequentially passing through the first tapered waveguide, the second tapered waveguide and the spiral waveguide, and outputting amplified laser signals; and the tip of the first tapered waveguide is coupled and connected with the tip of the second tapered waveguide. The application realizes high-output-power laser signals by using a composite device composed of a cascaded micro-ring resonator of an erbium-doped silicon nitride and a waveguide of a passive chalcogenide material.

The invention discloses a non-transfer rare earth doped tungsten diselenide heterojunction photoelectric device and a preparation method thereof, and belongs to the technical field of semiconductor photoelectric devices. The method comprises the following steps: carrying out cleaning and hydrofluoric acid activation treatment on a silicon substrate on a silicon-based insulator; the preparation method comprises the following steps: taking tungsten trioxide, erbium chloride, sodium chloride and selenium as precursors through a one-step chemical vapor deposition method, growing a single crystal erbium-doped tungsten diselenide film on an activated substrate silicon surface in an in-situ epitaxial growth manner, and directly constructing an erbium-doped tungsten diselenide / silicon Van der Waals heterojunction; and finally, preparing the electrode through photoetching, developing, metal deposition and stripping processes. According to the method, interface pollution caused by a traditional transfer process is thoroughly avoided, and high-concentration uniform erbium doping is realized by using a sodium chloride fluxing agent. The prepared heterojunction device has an atomic-scale clean interface and shows excellent photoelectric performance, the process is compatible with a complementary metal oxide semiconductor process, and a reliable platform is provided for high-performance silicon-based photoelectric integration.

A rare earth doped single-crystal diamond showing photoluminescence using off-resonant excitation at 853nm and having a full width at half maximum spectral linewidth at 1508nm of less than 1.0nm and a

The application discloses an erbium-doped zinc selenide composite material and a preparation method and application thereof. The preparation method comprises the following steps: dissolving zinc nitrate hexahydrate and erbium nitrate hexahydrate with a molar ratio of 0.02-0.08 in deionized water; adding sodium selenite and sodium hydroxide; then adding a reducing agent, hydrazine hydrate; after hydrothermal reaction for h, washing and drying to obtain the erbium-doped zinc selenide composite material. The material is a cubic phase ZnSe structure, and the erbium is uniformly doped in the crystal lattice in a near-spherical particle shape. The application introduces rich 4f electron defect states in the ZnSe band gap by erbium doping, significantly promotes charge transfer (chemical enhancement), and improves the free carrier concentration to excite the localized surface plasmon resonance (electromagnetic enhancement), so that the synergistic effect of the two enhancement mechanisms is realized. The detection limit of the SERS substrate for methylene blue is as low as 3.24*10 ‑8 mol / L, and the enhancement factor is as high as 1.73*10 4 , which provides a new way for environmental pollutant monitoring.

The invention discloses an erbium-doped silicon nitride film and a preparation method thereof, and a photonic integrated device and a preparation method thereof. According to the invention, heterogeneous integration can be avoided fundamentally, and concentration quenching can still be effectively inhibited under high doping concentration.

In some implementations, an optical amplifier system includes a variable gain optical amplifier that is an erbium doped fiber amplifier. The variable gain optical amplifier may provide a first gain stage for an optical signal. The optical amplifier system may include a fixed gain optical amplifier that is an erbium-ytterbium doped fiber amplifier. The fixed gain optical amplifier may provide a second gain stage for the optical signal following the first gain stage.

This invention discloses a dual-core erbium-doped optical fiber for simultaneous amplification of C-band and L-band signals, relating to the field of erbium-doped optical fiber technology. The fiber includes a first core, a second core, and an outer cladding. The erbium doping concentration of the first core, used for C-band amplification, differs from that of the second core, used for L-band amplification. The outer cladding surrounds the first and second cores. The first and second cores constitute a single-mode dual-core optical fiber structure. This invention achieves amplification of C-band and L-band signal light within the same erbium-doped optical fiber by using first and second cores with different erbium doping concentrations.

The present application relates to inorganic nano functional material and photochromic material technical field, disclose a kind of three-dimensional connected nanostructure tungsten oxide based on erbium doping and preparation method thereof, the method with tungstate as tungsten source, erbium salt as erbium source, precursor system is constructed under acidic condition, and hydrothermal reaction is carried out in the presence of promoter, obtain erbium-doped tungsten oxide nanomaterial. By adjusting acidity, hydrothermal temperature, reaction time and erbium doping amount, can make tungsten oxide gradually change from rod-like or needle-like structure into three-dimensional connected nano architecture. The obtained material has strong visible light absorption capacity and excellent photochromic performance, and can be applied to photochromic devices, ultraviolet response indicating materials, smart windows and optical information storage and other fields. The erbium-doped tungsten oxide material prepared under the preferred condition has faster color change response speed and more stable reversible color change characteristics.

This invention discloses a method for preparing erbium-doped gallium oxide thin films via fog chemical vapor deposition and its applications. The method includes: preparing a solution containing gallium oxide and erbium precursors, adding a stabilizer; forming micron-sized droplets through ultrasonic or pneumatic atomization; depositing the film at a low temperature of 200-600℃ on substrates such as sapphire or silicon using nitrogen or argon as a carrier gas; and annealing to optimize crystal quality. The resulting thin films have an erbium doping concentration of 0.1-5 at.%, a thickness of 100-500 nm, a β-phase structure, a photoluminescence peak at 1.54 μm, a quantum yield of 12.0-20.1%, and a uniformity of 95-99%, making them suitable for fiber optic communication waveguide amplifiers and deep ultraviolet photodetectors. This method is low-temperature efficient, compatible with various substrates, reduces thermal stress, and significantly improves film quality and device performance.

The invention discloses a plasma gold nanoparticle enhanced photoelectric detector and a preparation method thereof, and belongs to the technical field of two-dimensional materials and photoelectric devices. The photoelectric detector comprises an insulating substrate, an erbium-doped tungsten disulfide thin film growing on the insulating substrate, an electrode structure arranged on the surface of the thin film, and a gold nanoparticle layer attached to the surface of the erbium-doped tungsten disulfide through a polymethyl methacrylate thin film. The preparation method comprises the following steps: growing an erbium-doped tungsten disulfide film and preparing an electrode; depositing and annealing a gold film on the auxiliary substrate to form a gold nanoparticle array; spin-coating polymethyl methacrylate and removing the auxiliary substrate to obtain a composite film; and finally, the composite film is transferred and integrated to an active region of a device in a non-destructive manner. The structure damage of a traditional integration process to the two-dimensional material is avoided, the light absorption and photoelectric response performance of the device is remarkably improved through the synergistic effect of the plasma resonance effect and erbium doping, and the device is suitable for high-performance visible light detection.