1783 results about "Line width" patented technology

Conductive layers having knots are adjacently formed with uniform distance therebetween. Droplets of the conductive layers are discharged to stagger centers of the droplets in a length direction of wirings so that the centers of the discharged droplets are not on the same line in a line width direction between the adjacent conductive layers. Since the centers of the droplets are staggered, parts of the conductive layers each having a widest line width (the widest width of knot) are not connected to each other, and the conductive layers can be formed adjacently with a shorter distance therebetween.

The present invention provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a microwave power generator coupled to the to the chamber body through a waveguild, and one or more coils or magnets disposed around an outer circumference of the chamber body adjacent to the waveguide, and a gas source coupled to the waveguide through a gas delivery passageway.

Provided is a method for patterning a substrate, comprising: forming a layer of radiation-sensitive material on a substrate; preparing a pattern in the layer of radiation-sensitive material using a lithographic process, the pattern being characterized by a critical dimension (CD) and a roughness; following the preparing the pattern, performing a CD shrink process to reduce the CD to a reduced CD; and performing a growth process to grow the reduced CD to a target CD. Roughness includes a line edge roughness (LER), a line width roughness (LWR), or both LER and LWR. Performing the CD shrink process comprises: coating the pattern with a hard mask, the coating generating a hard mask coated resist; baking the hard mask coated resist in a temperature range for a time period, the baking generating a baked coated resist; and developing the baked coated resist in deionized water.

A method for processing a substrate including a processing target layer and an organic film, include: a deposition/trimming process of forming a reinforcement film on a surface of the organic film and, at the same time, trimming a line width of a line portion of the organic film constituting an opening pattern. The deposition/trimming process includes an adsorption process for allowing a silicon-containing gas to be adsorbed onto the surface of the organic film and an oxidation process in which the line width of the organic film is trimmed while the adsorbed silicon-containing gas is converted into a silicon oxide film. A monovalent aminosilane is employed as the silicon-containing gas.

The present invention provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer with enhanced electron spinning control. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a processing chamber having a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a support pedestal disposed in the interior processing region of the processing chamber, and a plasma generator source disposed in the processing chamber operable to provide predominantly an electron beam source to the interior processing region.

An overlay target for spectroscopic measurement includes at least two diffraction gratings, one grating overlying the other. The diffraction gratings may include an asymmetry relative to each other in order to improve resolution of the presence as well as the direction of any mis-registration. For example, the asymmetry between the two diffraction gratings may be a phase offset, a difference in pitch, line width, etc. The overlay target may be spectroscopically measuring, for example, using an optical model and a best fit analysis. Moreover, the overlay target may be optimized by modeling the overlay target and adjusting the variable parameters and calculating the sensitivity of the overlay target to changes in variable parameters.

A method for forming an active pillar of a vertical channel transistor includes forming a hard mask pattern on a substrate, etching vertically the substrate using the hard mask pattern as an etch barrier to form an active pillar, and etching horizontally to remove by-product remaining on the exposed substrate, the hard mask pattern and the active pillar and at the same time to reduce line width of the hard mask pattern and the active pillar, wherein a unit cycle in which the vertical etching and the horizontal etching are each performed subsequently once, respectively, is performed repeatedly at least two times or more. According to the present invention, an active pillar having vertical profiles on its sidewalls and having height and line width (or diameter) required in a highly integrated vertical channel transistor can be provided.

A method of forming a pattern in a semiconductor device is described. A substrate divided into cell and peripheral regions is provided, and an object layer is formed on a substrate. A buffer pattern is formed on the object layer in the cell region along a first direction. A spacer is formed along a sidewall of the buffer pattern in the cell region, and a hard mask layer remains on the object layer in the peripheral region. The buffer layer is removed, and the spacer is separated along a second direction different from the first direction, thereby forming a cell hard mask pattern. A peripheral hard mask pattern is formed in the peripheral region. A minute pattern is formed using the cell and peripheral hard mask patterns in the substrate. Therefore, a line width variation or an edge line roughness due to the photolithography process is minimized.

The invention provides a method for forming a film pattern, in which a method for forming a film pattern by the ink-jet method is improved, an increase in film thickness is achieved efficiently with simple steps, a requirement for a decrease in line width is met and, in addition, problems such as breaks and short circuits are not brought about when a conductive film is made. The method can include a first discharging step, wherein droplets are discharged in the whole film formation region with a pitch larger than the diameter of the droplet after being hit onto the substrate. In the second discharging step, droplets are discharged at positions in the whole film formation region different from the discharge positions in the first discharging step with the same pitch as that in the first discharging step. In the third discharging step, droplets are discharged in the whole film formation region with a pitch smaller than the pitch in the first discharging step. The substrate is treated beforehand in order to have the contact angle of 60 degrees or more with respect to the droplets.

A method of forming a small pitch pattern using double spacers is provided. A material layer and first hard masks are used and characterized by a line pattern having a smaller line width than a separation distance between adjacent mask elements. A first spacer layer covering sidewall portions of the first hard mask and a second spacer layer are formed, and spacer-etched, thereby forming a spacer pattern-shaped second hard mask on sidewall portions of the first hard mask. A portion of the second spacer layer between the first hard mask and the second hard mask is selectively removed. The material layer is selectively etched using the first and second hard masks as etch masks, thereby forming the small pitch pattern.

A scanning exposure apparatus which promptly analyzes a cause for a variation in exposure line width. The scanning exposure apparatus includes a mask stage on which a mask is placed, a wafer stage on which a wafer is placed, a focusing mechanism which detects surface position information of the wafer and adjustment means which adjusts the surface position of the wafer. Control means acquires pose information of the wafer adjusted by the adjustment means at the time of exposure and stores the pose information in a memory in association with preacquired surface shape information of an exposure area. A state in which the exposed surface of the wafer has been exposed with respect to exposure light is known from the pose information and the surface shape information.

The present invention belongs to the field of fine surface structure measuring technology, and relates to one kind of differential confocal scanning detection method with high spatial resolution. Differential confocal microscopic double receiving light path configuration and double detector subtraction form the differential confocal signal in measuring the workpiece. Optical super-resolution confocal microscopic detection method is adopted to raise the transverse resolution, and differential confocal microscopic detection method is adopted to raise the longitudinal resolution, so as to reach differential confocal scanning detection of high spatial resolution. The method can meet the requirements in high spatial resolution, high precision and great measurement range, and is especially suitable for the measurement of fine surface 3D structure, miniature steps, miniature grooves, line width, surface appearance, etc.

A parallel resonant circuit is realized by stacking first to fourth wiring patterns each having at least an inductance element. One of the adjacent first and second wiring patterns is set to a signal input node and the other thereof is set to a signal output node. Then, the signal input node is connected to the signal output node via inductance elements of the first wiring pattern, third wiring pattern, fourth wiring pattern and second wiring pattern in order. By adjacently forming wiring layers of the signal input and output nodes, a capacitance value between the input and output nodes is increased compared to that when they are separated. Also, by increasing the line width of the first and second wiring patterns, the capacitance value can be further increased. Therefore, it is possible to achieve a large capacitance value in a small area and downsizing of the electronic device.

The present invention relates to a novel thermal-sensitive resistive apparatus, such as PTC and NTC, which allocates planar electrode films on the top and bottom surfaces of a prior art thermal-sensitive resistive apparatus, such as a PTC apparatus, to laminate with an outer electrode layer. A plurality of interconnection vias are electroplated with conductive material to connect to any plane. It is convenient to surface mount the apparatus of the present invention on a printed circuit board. The present invention can largely increase the dimensional stability of components and overcome the disadvantage that thermal diffusion of the prior are surface mounted resistive apparatus is affected easily by line width and environments.

An external cavity mirror for use in a semiconductor laser, the external cavity mirror comprising a waveguide formed on a substrate of highly electro-optic material, and including electrically-operated means for determining the reflectance attributes of the external cavity mirror.

Defects in an image forming system may give rise to visible streaks, or one-dimensional defects in an image that run parallel to the process direction. One known method for compensating for streaks introduces a separate tone reproduction curve for each pixel column in the process direction. A compensation pattern according to this invention has a plurality of halftone regions that are lead by, trained by, and separated by rows of fiducial marks. The fiducial marks allow the printer pixel grid and a scanning pixel grid to be correlated. The gray level in each pixel column of each gray level portion is measured and analyzed to produce a local tone reproduction curve for each pixel column and associated line width. The local tone reproduction curves are then used to compensate for the streak defect when printing.

Provided herein are block copolymer thin film structures and methods of fabrication. Aspects described herein include methods of directed self-assembly of block copolymers on patterns using solvent annealing, and the resulting thin films, structures, media or other compositions. According to various embodiments, solvent annealing is used direct the assembly of block copolymers on chemical patterns to achieve high degrees of pattern perfection, placement of features at the precision of the lithographic tool used to make the chemical pattern, improved dimensional control of features, improved line edge and line width roughness, and resolution enhancement by factors of two to four or greater.

An optical phase lock loop (OPLL) system is disclosed that includes a master external cavity laser (ECL), and a substantially identical slave ECL. The master and slave ECLs are fabricated using a planar semiconductor device with waveguide-integrated planar Bragg gratings (PBG). Both the master and slave ECLs have a narrow linewidth and a low frequency-noise. Each of the ECLs has their own controller-modulator circuits for thermal tuning or electrical tuning via direct modulation. A laser-select-logic (LSL) module receives and processes a filtered phase error signal from a loop filter coupled to an electronic PLL device, and directs the processed phase error signal to one or both of the master and slave controller-modulators according to a logical determination of a required mode of operation of the OPLL system in order to achieve a stable and identical phase performance of the master and the slave ECLs. The required mode of operation is chosen from a locking mode, a prediction mode, a tracking mode, and a searching mode.

A single-frequency Brillouin fiber ring laser with extremely narrow linewidth comprises a single-frequency narrow-linewidth rapid-tunable pump laser, a temperature-controlled acoustically-damped package for Brillouin fiber ring laser cavity, and an auto-tracking feedback electronic loop with novel configuration for active stabilization. The Pound-Drever-Hall frequency-locking technique is employed to keep pump laser frequency in resonance with one of the Brillouin fiber ring cavity modes. Instead of changing cavity length of Brillouin fiber ring laser, the pump laser frequency is rapidly tuned in the auto-tracking feedback electronic loop. This enables extremely narrow linewidth radiation emitted from a Brillouin fiber ring laser without stretching the fiber ring. Dual-wavelength actively stabilized Brillouin fiber ring laser may be generated from a single ring cavity by polarization-combining or wavelength-combining two pump laser beams and using two independent feedback loops to the two operation wavelengths.

The invention discloses a COTDR (coherent detection based optical time-domain reflectometry) fused long-distance coherent detection brilouin optical time-domain analyzer which comprises a narrow-linewidth laser, two couplings, a microwave signal source, an electro-optic modulator, an isolator, a long-distance sensing optical fiber, an optical circulator, a 3 db coupling, a pulse modulator, an Er-doped fiber amplifier, a scrambler, a pulse signal generator, a balancing photoelectric detector, an electrical frequency spectrum analyzer, a data processing module and an acousto-optic modulator. According to the invention, the signal-to-noise ratio of BOTDA (brilouin optical time domain analysis) is improved by using a coherent detection method, a non-local effect of a BOTDA system is reduced in a double-sideband detection mode, and the sensing distance is more than 70 km under the condition of no light amplification such as raman; and according to the invention, the COTDR is fused to a coherent detection based BOTDA system, and the system can run in a breakpoint testing mode, so that the defect that the traditional BOTDA can not run when a sensing fiber has breakpoints and can not carry out positioning on breakpoints is effectively overcome, thereby enhancing the adaptability and practicability of the sensing system.

An apparatus, method and system that uses a Q-switched laser or a Q-seed source for a seed pulse signal having a controlled high-dynamic-range amplitude that avoids and/or compensates for pulse steepening in high-gain optical-fiber and/or optical-rod amplification of optical pulses. Optionally, the optical output is used for LIDAR or illumination purposes (e.g., for image acquisition). In some embodiments, well-controlled pulse shapes are obtained having a wide dynamic range, long duration, and not-too-narrow linewidth. In some embodiments, upon the opening of a Q-switch in an optical cavity having a gain medium, the amplification builds relatively slowly, wherein each round trip through the gain medium increases the amplitude of the optical pulse. Other embodiments use quasi-Q-switch devices or a plurality of amplitude modulators to obtain Q-seed pulses. These configurations provide optical pulses having wide dynamic ranges that ameliorate problems of pulse steepening, non-linear spectral broadening and the like in very-high-power MOPA devices.

The invention provides a terahertz plane adsorbing material, belonging to the technical field of electromagnetic function materials and relating to an electromagnetic-wave absorbing material. The terahertz plane adsorbing material comprises a substrate, a metal reflecting layer, a dielectric layer and an artificial electromagnetic medium layer; wherein, the metal reflecting layer is a continuous metal film and is arranged on the surface of the substrate; the dielectric layer is arranged between the metal reflecting layer and the artificial electromagnetic medium layer; the artificial electromagnetic medium layer is composed of artificial electromagnetic medium units which are arrayed periodically, each unit is a centro-symmetric figure formed by metal film lines with line width which is t and comprises two sing-opening metal rings which are connected backwards with long edges at two sides of an electric snap ring resonator. The terahertz plane adsorbing material provided by the invention has two strong-absorption frequency ranges, so as to provide selective adsorption and detection at different frequency ranges, and the terahertz radiation with wider spectral range can be adsorbed, so as to improve the performance and efficiency of the terahertz plane adsorbing material.

An antenna (100) is provided. The antenna includes: a first ground element (105); a first driven element (110) formed from a planar piece of conductive material, the first driven element being configured to transmit and receive wireless signals, the first driven element including a physical slot (130); a conductive line (135) formed in the physical slot such that the conductive line is separated from the first driven element by a gap (G) filled with non-conductive material, the conductive line having a line impedance that is a function of an effective line width of the conductive line, and an effective gap width of a gap between the conductive line and the first driven element; and a signal line (120) configured to send and receive signals to and from the conductive line.

A liquid crystal display device includes a counter substrate facing an array substrate via a liquid crystal layer, and a backlight unit provided on a back side of the array substrate. The counter substrate includes a first light shielding layer formed on a first transparent substrate, a transparent resin layer formed on the first transparent substrate, and a second light shielding layer formed on the transparent resin layer. The first light shielding layer has openings corresponding to polygonal pixels having a polygonal shape in which at least two edges are parallel in a planar view. The first light shielding layer includes a first linear pattern having a center line that overlaps with a center line of a second linear pattern of the second light shielding layer in a planar view. The first linear pattern has a line width different from a line width of the second linear pattern.

A master slice layout technology is provided to improve integration density of a semiconductor integrated circuit such as ASIC. In particular, a plurality of gate basic cells are arranged on a semiconductor chip and then a wiring channel grid having non-uniform pitches is defined on the gate basic cells. If a layout of metal wirings is designed along the wiring channel grid, miniaturizable patterns can be set to smaller values while maintaining line widths of predetermined metal wirings such as power supply wirings at preselected values. Since flexibility for the layout of the metal wiring layers is large, miniaturization of the patterns can be attained even if design rules for basic cell process and wiring process are different.

A synthetic diamond material comprising one or more spin defects having a full width half maximum intrinsic inhomogeneous zero phonon line width of no more than 100 MHz. The method for obtain such a material involves a multi-stage annealing process.

A reticle inspection system for inspecting reticles can be used as an incoming inspection tool, and as a periodic and pre-exposure inspection tool. Mask shops can use it as an inspection tool compatible to their customers, and as a printable error detection tool. The inventive system detects two kinds of defects: (1) line width errors in the printed image; (2) surface defects. The line width errors are detected on the die area. The detection is performed by acquiring the image of the reticle under the same optical conditions as the exposure conditions, (i.e. wavelength, numerical aperture, sigma, and illumination aperture type) and by comparing multiple dies to find errors in the line width. Surface defects are detected all over the reticle. The detection of surface defects is performed by acquiring transmission and dark-field reflection images of the reticle and using the combined information to detect particles, and other surface defects.

The invention discloses a method for a measuring sea water temperature profile based on an optical fiber Brillouin scattering principle. A Brillouin optical time domain reflection principle-based measurement system consists of a narrow line-width laser, an optical coupler, a pulse generator, an optical modulator, a circulator, an optical switch, a photoelectric detector, a Brillouin frequency shift detection unit and a sensing optical cable. The sensing optical cable used by the invention has a small size and sea water corrosion resistance, and is convenient to use. The measurement system has high reliability and high measuring sensitivity, can provide continuous temperature field distribution of the sea water profile, and is particularly suitable for real-time continuous measurement of the sea water temperature profile.

An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.

The invention discloses a self-correlation optical fiber communication system based on mode division multiplexing. The self-correlation optical fiber communication system based on mode division multiplexing comprises an optical carrier input unit, optical signal modulation units, a wavelength division multiplexing unit, a mode division multiplexing and demultiplexing unit, a wavelength division multiplexing unit and coherent reception units. The mode division multiplexing and reconciliation multiplexing unit comprises a mode multiplexer and mode demultiplexer, and the mode multiplexer and the mode demultiplexer are connected through few-mode optical fibers. The optical carrier input unit is connected with each optical signal modulation unit, the wavelength division multiplexing unit and the mode multiplexer through single-mode optical fibers. The mode multiplexer is connected with the mode demultiplexer through few-mode optical fibers. The mode demultiplexer is connected with the wavelength division multiplexing unit and each coherent reception unit through single-mode optical fibers. The optical carrier input unit is further connected with the wavelength division multiplexing unit. The self-correlation optical fiber communication system based on mode division multiplexing eliminates an expensive narrow line width adjustable local oscillator light source which is arranged at a reception end, enables a laser to be conveniently managed and maintained, is free from using frequency offset estimation in a digital signal processor (DSP) and phase retrieval algorithm, reduces complexity of the DSP and has the advantages of being high in spectrum effectiveness and big in nonlinearity tolerance.