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4489 results about "Line width" patented technology

The linewidth (or line width) of a laser, e.g. a single-frequency laser, is the width (typically the full width at half-maximum, FWHM) of its optical spectrum . More precisely, it is the width of the power spectral density of the emitted electric field in terms of frequency, wavenumber or wavelength. Similarly,...

Methods and apparatus for controlling photoresist line width roughness

The present invention provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a microwave power generator coupled to the to the chamber body through a waveguild, and one or more coils or magnets disposed around an outer circumference of the chamber body adjacent to the waveguide, and a gas source coupled to the waveguide through a gas delivery passageway.
Owner:APPLIED MATERIALS INC

Substrate processing method

A method for processing a substrate including a processing target layer and an organic film, include: a deposition / trimming process of forming a reinforcement film on a surface of the organic film and, at the same time, trimming a line width of a line portion of the organic film constituting an opening pattern. The deposition / trimming process includes an adsorption process for allowing a silicon-containing gas to be adsorbed onto the surface of the organic film and an oxidation process in which the line width of the organic film is trimmed while the adsorbed silicon-containing gas is converted into a silicon oxide film. A monovalent aminosilane is employed as the silicon-containing gas.
Owner:TOKYO ELECTRON LTD

Methods and apparatus for controlling photoresist line width roughness with enhanced electron spin control

The present invention provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer with enhanced electron spinning control. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a processing chamber having a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a support pedestal disposed in the interior processing region of the processing chamber, and a plasma generator source disposed in the processing chamber operable to provide predominantly an electron beam source to the interior processing region.
Owner:APPLIED MATERIALS INC

Spectroscopically measured overlay target

An overlay target for spectroscopic measurement includes at least two diffraction gratings, one grating overlying the other. The diffraction gratings may include an asymmetry relative to each other in order to improve resolution of the presence as well as the direction of any mis-registration. For example, the asymmetry between the two diffraction gratings may be a phase offset, a difference in pitch, line width, etc. The overlay target may be spectroscopically measuring, for example, using an optical model and a best fit analysis. Moreover, the overlay target may be optimized by modeling the overlay target and adjusting the variable parameters and calculating the sensitivity of the overlay target to changes in variable parameters.
Owner:ONTO INNOVATION INC

Method for forming active pillar of vertical channel transistor

A method for forming an active pillar of a vertical channel transistor includes forming a hard mask pattern on a substrate, etching vertically the substrate using the hard mask pattern as an etch barrier to form an active pillar, and etching horizontally to remove by-product remaining on the exposed substrate, the hard mask pattern and the active pillar and at the same time to reduce line width of the hard mask pattern and the active pillar, wherein a unit cycle in which the vertical etching and the horizontal etching are each performed subsequently once, respectively, is performed repeatedly at least two times or more. According to the present invention, an active pillar having vertical profiles on its sidewalls and having height and line width (or diameter) required in a highly integrated vertical channel transistor can be provided.
Owner:SK HYNIX INC

Apparatus and methods for forming film pattern

The invention provides a method for forming a film pattern, in which a method for forming a film pattern by the ink-jet method is improved, an increase in film thickness is achieved efficiently with simple steps, a requirement for a decrease in line width is met and, in addition, problems such as breaks and short circuits are not brought about when a conductive film is made. The method can include a first discharging step, wherein droplets are discharged in the whole film formation region with a pitch larger than the diameter of the droplet after being hit onto the substrate. In the second discharging step, droplets are discharged at positions in the whole film formation region different from the discharge positions in the first discharging step with the same pitch as that in the first discharging step. In the third discharging step, droplets are discharged in the whole film formation region with a pitch smaller than the pitch in the first discharging step. The substrate is treated beforehand in order to have the contact angle of 60 degrees or more with respect to the droplets.
Owner:SEIKO EPSON CORP

Scanning exposure apparatus

A scanning exposure apparatus which promptly analyzes a cause for a variation in exposure line width. The scanning exposure apparatus includes a mask stage on which a mask is placed, a wafer stage on which a wafer is placed, a focusing mechanism which detects surface position information of the wafer and adjustment means which adjusts the surface position of the wafer. Control means acquires pose information of the wafer adjusted by the adjustment means at the time of exposure and stores the pose information in a memory in association with preacquired surface shape information of an exposure area. A state in which the exposed surface of the wafer has been exposed with respect to exposure light is known from the pose information and the surface shape information.
Owner:NIKON CORP

Differential confocal scanning detection method with high spatial resolution

The present invention belongs to the field of fine surface structure measuring technology, and relates to one kind of differential confocal scanning detection method with high spatial resolution. Differential confocal microscopic double receiving light path configuration and double detector subtraction form the differential confocal signal in measuring the workpiece. Optical super-resolution confocal microscopic detection method is adopted to raise the transverse resolution, and differential confocal microscopic detection method is adopted to raise the longitudinal resolution, so as to reach differential confocal scanning detection of high spatial resolution. The method can meet the requirements in high spatial resolution, high precision and great measurement range, and is especially suitable for the measurement of fine surface 3D structure, miniature steps, miniature grooves, line width, surface appearance, etc.
Owner:HARBIN INST OF TECH
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