42results about How to "Reduce line width roughness" patented technology

To achieve the foregoing and in accordance with the purpose of the present invention a method for etching an etch layer disposed below an antireflective coating (ARC) layer below a patterned mask is provided. The ARC layer is opened, and features are etched into the etch layer through the patterned mask. The opening the ARC layer includes (1) providing an ARC opening gas comprising a halogen containing gas, COS, and an oxygen containing gas, (2) forming a plasma from the ARC opening gas to open the ARC layer, and (3) stopping providing the ARC opening gas to stop the plasma. The patterned mask may be a photoresist (PR) mask having a line-space pattern. COS in the ARC opening gas reduces line width roughness (LWR) of the patterned features of the etch layer.

There is provided an active light sensitive or radiation sensitive composition which contains (A) a compound that generates an acid by irradiation with active light or radiation, (P) a compound of which the solubility in alkali developers is increased due to the action of an acid, and (N) at least one specific compound, and which can satisfy high resolving power, an excellent pattern shape, and low line width roughness (LWR) at the same time to a high level in formation of a very fine pattern (for example, a line width of 50 nm or less), and a resist film, a pattern forming method, a resist-coated mask blank, a method for producing a photomask, a photomask, a method for manufacturing an electronic device, and an electronic device, each of which uses this active light sensitive or radiation sensitive composition.

The invention discloses a sulfonium sulfonate salt photoacid generator synthesized from cedrol and a synthesis method for the sulfonium sulfonate salt photoacid generator, belonging to the fields of chemical synthesis and photoetching materials. The photoacid generator has a structural general formula which is described in the specification. In the structural general formula, R1 is one selected from the group consisting of groups which are described in the specification; and R2 is one selected from the group consisting of a covalent bond, an alkyl group, a cycloalkyl group, an ester group-containing alkyl group and a fluorine-containing alkyl group. The synthesis method for the photoacid generator comprises the following steps: allowing the cedrol to react with a sulfonate compound so as to obtain an intermediate; and allowing the intermediate to react with (cyclohexyl-1,5-dienyloxy)-trimethyl-silane, tetramethylene sulfoxide and trifluoroacetic anhydride so as to obtain the sulfoniumsulfonate salt photoacid generator. According to the invention, a raw material, namely the cedrol has large molecular weight, so the photoacid generator formed by the cedrol also has large molecular weight; diffusion of the photoacid generator can be reduced; and improvement of the edge roughness, reduction of the line width roughness and improvement of the resolution ratio are facilitated.

A formation method of a semiconductor structure is disclosed. The method comprises the following steps of providing a surface possessing a grid film substrate, wherein a grid pattern film including a hard mask layer material layer and a silicon material layer covers a grid film surface; forming a pattern layer on a grid pattern film surface; taking the pattern layer as a mask layer and etching a part of the grid pattern film to form a grid pattern layer, wherein the grid pattern layer comprises a hard mask layer and a silicon layer located on a hard mask layer surface; and a sidewall surface of the silicon layer, which is vertical to a first direction, possesses first line width roughness; carrying out repairing etching processing on the silicon layer sidewall vertical to the first direction so that the silicon layer sidewall surface possesses second line width roughness less than the first line width roughness; taking the grid pattern layer as the mask layer to etch a grid film and forming a grid on a substrate surface; and forming a source area and a leakage area in the substrate of two sides of a grid sidewall vertical to the first direction. By using the method, the line width roughness of the grid pattern layer is reduced so that formed grid quality is increased and electric performance of the semiconductor structure is optimized.

A pattern forming method, includes: exposing a resist film with actinic rays or radiation a plurality of times; and heating the resist film at a first temperature in at least one interval between the exposures.

The invention relates to biphenyl molecular glass and a preparation method thereof, namely preparation of 2, 2' 1 2 (3, 5-di-tert-butyl-di-carbonate)-4, 4'-1 2 (di-tert-butyl-di-carbonate) biphenyl compound A and 2, 2', 4, 4'-4 (3, 5-di-tert-butyl-di-carbonate) biphenyl compound B. The diazotization reaction is conducted on 2, 2' 1 2 (3, 5-di-tert-butyl-di-carbonate)-4, 4'-benzidine under the condition of NaNO2/H2SO4, then the 2, 2' 1 2 (3, 5-di-tert-butyl-di-carbonate)-4, 4'-benzidine is heated and hydrolyzed under the acidity condition, demethylation is conducted under the condition of BBr3 to obtain 2, 2' 1 2 (3, 5-dyhydroxy-phenyl)-4, 4'-diphenol, and finally the 2, 2' 1 2 (3, 5-dyhydroxy-phenyl)-4, 4'-diphenol reacts with (t-Boc)2O to obtain the compound A. The 2, 2' 1 2 (3, 5-di-tert-butyl-di-carbonate)-4, 4'-benzidine is diazotized and then mixed with potassium iodide to obtain 2, 2' 1 2 (3, 5-di-tert-butyl-di-carbonate)-4, 4'-biphenyl-diiodine. The 2, 2' 1 2 (3, 5-di-tert-butyl-di-carbonate)-4, 4'-biphenyl-diiodine conducts Suzuki reaction with 3, 5-dimethoxy benzene boric acid under catalyst of Pd(Ph3)4/K2CO3 to obtain 2, 2', 4, 4'-4(3, 5-dimethoxy) biphenyl. 2, 2', 4, 4'-4(3, 5-dyhydroxy-biphenyl) is obtained by demethylation through the BBr3 under low temperature and reacts with the (t-Boc)2O to obtain the compound B.

A method for forming a semiconductor device includes the steps of providing a material layer to be etched, wherein material layer to be etched has a barrier layer; forming a plurality of discrete sacrificial layers on the surface of the barrier layer; forming a first sidewall material layer on the top surfaces and the sidewall surfaces of the sacrificial layers, and the surface of the barrier layer; etching the first sidewall material layer until exposing the surface of the barrier layer and top surfaces of the sacrificial layers, forming a first side wall on the sidewalls of the sacrificial layers, with an etching selection ratio of the first sidewall material layer to the barrier layer being greater than or equal to 10; and after removing the sacrificial layers, etching the barrier layerand the material to be etched by using the first sidewall as a mask. The method of forming the semiconductor device improves the performance of the patterns in the semiconductor device.

A provided method for reducing photoresist figure linewidth roughness comprises putting a substrate with a photoresist figure on the surface in a vacuum chamber; and using a band-shaped ion beam to perform ion injection on the photoresist figure, so as to reduce the low-frequency linewidth roughness of the photoresist figure. After ion injection, the low-frequency linewidth roughness of the photoresist figure is substantially reduced.

The invention provides a preparation method of a semiconductor structure. The preparation method comprises the following steps: providing a to-be-etched layer; forming a core mold layer on the surfaceof the to-be-etched layer; forming a side wall material layer on the surfaces of the to-be-etched layer and the core mold layer; under the condition of applying continuous bias power and/or pulse bias power, etching back the side wall material layer by adopting a plasma etching process until the to-be-etched layer and the top of the core mold layer are exposed, and reserving the side wall materials on the two sides of the core mold layer as side walls; removing the core mold layer; and after the core mold layer is removed, etching the to-be-etched layer by taking the side walls as masks. By utilizing the method, the line width roughness of the semiconductor structure is sequentially controlled and reduced through different steps, and the pattern feature structure is accurately transferredto the substrate, so that the performance of the device is improved.

The invention discloses a photoacid generator with a diphenyl sulfonium structure and a synthesis method of the photoacid generator, and relates to the field of photoresists, the photoacid generator has the following structure shown in the description, wherein A is C1-C5 fluoroalkane, and B is a naphthenic base of C3-C10. The photoacid generator disclosed by the invention can control acid diffusion, reduce line width roughness, prevent pattern damage and form photoetching patterns with uniform sizes, and has high transparency under a 193nm light source.

A forming method of a fin type field-effect transistor comprises the steps of forming a silicon material layer on a film surface of a gate; forming a plurality of discrete first pattern layers on the silicon material layer, wherein the first pattern layers stretches across at least one fin part, and the arrangement direction of the first pattern layers is parallel to the extending direction of the fin part; taking the first pattern layers as a mask, and etching the silicon material layer until the film surface of the gate is exposed, and forming a plurality of discrete initial silicon layers on the film surface of the gate, wherein the initial silicon layers and a surface of a side wall perpendicular to the extending direction of the fin part have first line width roughness; and performing repairing etching treatment on the initial silicon layers and the side wall perpendicular to the extending direction of the fin part so that the initial silicon layers and the surface of the side wall perpendicular to the extending direction of the fin part have second line width roughness, wherein the second line width roughness is smaller than the first line width roughness. By the forming method, the quality of the formed gate is improved, the line width roughness of the gate and the side wall perpendicular to the extending direction of the fin part is improved, and thus, the electrochemical performance of the fin type field-effect transistor is improved.

The invention discloses a sulfonium sulfonate photoacid generator synthesized from abietic acid, and relates to the field of photoacid generators. The sulfonium sulfonate photoacid generator has a structural formula shown in the specification, in the formula, R1 is an oxygen-containing linking group, and R2 is a fluoroalkyl group. The photoacid generator can reduce the diffusion of the photoacid generator, improve the edge roughness, reduce the line width roughness and improve the resolution; the photoacid generator is more transparent under 193 nm, and exposure under a 193 nm light source is facilitated; the etching resistance is excellent; the photoacid generator is balanced in hydrophilicity and lipophilicity, has proper adhesive force and excellent solubility, is more uniform in dissolution, and is simple in synthetic route.

The invention discloses 193nm photoresist film-forming resin, a preparation method thereof and a positive photoresist composition, and belongs to the technical field of semiconductor microelectronic chemistry. The 193nm positive photoresist contains film-forming resin and a photoacid generator, and the film-forming resin contains the following components in percentage by mole: 5-40% of a composition unit containing a cholic acid derivative; 10%-50% of a constituent unit containing a polar group; 10%-40% of a unit containing an acid-sensitive group; the cholic acid derivative unit is at least one compound conforming to a chemical general formula (I); the constituent unit of the polar group refers to at least one compound conforming to a chemical general formula (II); the acid-sensitive group unit is at least one compound conforming to a chemical general formula (III). The cholic acid-containing derivative is introduced as a film-forming resin unit, so that the adhesiveness, the dissolution inhibition effect and the graphic contrast of the film-forming resin can be improved, and the line edge roughness is reduced.

The invention provides a pattern transfer method, which is used for transferring a characteristic pattern to a substrate. The method comprises the following steps: S1) forming a photoresist layer on the substrate, and transferring the characteristic pattern to the photoresist layer through the composition technology to form a photoresist pattern; S2) turning on an excitation power supply and a grid bias power supply in an etching chamber, wherein the grid bias power supply is a first grid bias power supply corresponding to plasma immersion ion implantation technology, carrying out plasma immersion ion implantation on the photoresist pattern, and then, turning off the first grid bias power supply; and S3) carrying out plasma etching on the substrate, on the surface of which the photoresist pattern is formed, in the etching chamber until the characteristic pattern is transferred to the substrate. The pattern transfer method can reduce line width roughness of each line of the photoresist pattern in situ, so that process is simplified to a great extent, process time is reduced and device cost is reduced; and besides, line width roughness of each line of the photoresist pattern can be further reduced, thereby facilitating accurately transferring the pattern to the substrate.

The invention provides photosensitive resin, a preparation method and an application thereof. The photosensitive resin has a structure as shown in a formula I, is an alkali-soluble resin, and heat resistance, stability and photosensitivity can be remarkably improved through a special design of a molecular structure and introduction of anthracene ketone groups. The photosensitive resin can be subjected to a chemical crosslinking reaction under light irradiation to form a stable condensate insoluble in an alkali liquor so that a photoresist composition containing the photosensitive resin has excellent developing performance, adhesion, pattern precision and thermal stability. The photosensitive resin is suitable for a negative photoresist composition and is especially suitable for photoresistfor a black matrix, and a pattern obtained after exposure and development has good collimation, resolution and the excellent thermal stability. The photosensitive resin can be used for preparing a high-precision microstructure, and a stability requirement of the photoresist for multiple high-temperature baking processes in a processing process can be fully met.