194results about How to "Increased etch resistance" patented technology

The present invention relates to a novel spin coatable composition comprising

• (a) metallosilicic acid; (b) at least one compound comprising two or more 4-hydroxyphenyl groups; and, c) a solvent. The component b) can be a 4-hydroxyphenyl compound of structure (I) wherein W is a linking group chosen from the group consisting of an organic linking moiety, a heteroatom containing linking moiety and a direct valence bond, m is a positive integer of 1 and n is a positive integer equal to 1 or and Rⁱ, Rⁱⁱ, Rⁱⁱⁱ and R^iv are independently chosen substituents from a group consisting of hydrogen, (C₁-C₆) alkyl, (C₁-C₆) alkoxy, (C₆-C₂₀) aryl, halides (such as Cl, I, F), hydroxyl, alkylcarbonyl (alkyl-C(═O)—), alkylcarbonyloxy (alkyl-C(═O)—O—), alkyloxycarbonyl (alkyl-O—C(═O)—), alkyloxycarbonyloxy (alkyl-O—C(═O)—O—) and mixtures of these; and a solvent.

The present invention further relates to processes using the novel compositions.

A phenolic self-crosslinking polymer whose self-crosslinking reaction at a heating step is performed without additives for hardening the polymer, and a composition of resist-underlayer-film containing the same, are disclosed. The phenolic self-crosslinking polymer being selected from a group consisting of a polymer represented by Formula 1, a polymer represented by Formula 2 and a polymer represented by Formula 3:

A sesquiterpene-containing film-forming resin and a positive 248 nm photoresist thereof are characterized in that: the film-forming resin is a copolymer prepared by copolymerization of comonomers in a solvent in the presence of a radical initiator, and the comonomers mainly comprise 5-40 parts by weight of substituted styrene and 10-60 parts by weight of a sesquiterpene-containing constitutional unit; and the positive 248 nm photoresist mainly consists of 10-35 parts by weight of the film-forming resin, 0.5-6 parts by weight of a photoinduced acid, 70-90 parts by weight of a solvent and 0.01-0.5 part by weight of an organic base. The film-forming resin of the invention is a new modified film-forming resin prepared by introducing a polymerisable monomer containing a natural product sesquiterpene to a conventional poly(p-hydroxystyrene)-based film-forming resin. The new film-forming resin is capable of increasing transparency of the photoresist at exposure wavelength of 248 nm, improving photosensitivity of the photoresist, increasing adhesive property between HMDS-treated silicon chips, having no influence on photo-etched pattern and no damage to expensive lens of an exposure machine, improving heat resistance of the photoresist and substantially improving anti-etching performance of the photoresist.

The invention relates to an antireflective coating composition comprising a crosslinker and a crosslinkable polymer capable of being crosslinked by the crosslinker, where the crosslinkable polymer comprises a unit represented by structure (1):

A-B_n  (1)

where A is a fused aromatic ring and B has a structure (2),

where R₁ is C₁-C₄alkyl and R₂ is C₁-C₄alkyl

The invention further relates to a process for forming an image using the composition.

When forming high-k metal gate electrode structures in an early manufacturing stage, integrity of an encapsulation and, thus, integrity of sensitive gate materials may be improved by reducing the surface topography of the isolation regions. To this end, a dielectric cap layer of superior etch resistivity is provided in combination with the conventional silicon dioxide material.

The present invention includes a lithography method comprising forming a first patterned insist layer including at least one opening therein over a substrate. A water-soluble polymer layer is formed over the first patterned resist layer and the substrate, whereby a reaction occurs at the interface of the first patterned resist layer and the water-soluble polymer layer. The non-reacted water-soluble polymer layer is removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at leastone opening of the first patterned resist layer or abuts at least one portion of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layersas a mask. The method creats a resist pattern with an overall enhanced etch resistance that can be used to create fine granularity features needed for sub-micron semiconductor devices. The use of these materials results in a patterned resist layer less prone to top loss, round corners, and resist pattern degradation.

The invention relates to an antireflective coating composition comprising a crosslinker and a crosslinkable polymer capable of being crosslinked by the crosslinker, where the crosslinkable polymer comprises a unit represented by structure (1):

A-B—C  (1)

where A is a fused aromatic ring, B has a structure (2), and C is a hydroxybiphenyl of structure (3)

where R₁ is C₁-C₄alkyl and R₂ is C₁-C₄alkyl.

The invention further relates to a process for forming an image using the composition.

The invention discloses bio-based film-forming resin and photoresist prepared by the same. The bio-based film-forming resin is prepared by styrene derivatives and cholic acid derivatives through freeradical polymerization reaction and alcoholysis reaction. The bio-based film-forming resin is mixed with a photo-acid generator, auxiliaries, a solvent and the like to prepare the 365nm and 248nm photoresist. The bio-based film-forming resin has the advantages that polymerizable monomers containing natural product cholic acid are introduced into conventional poly(p-hydroxystyrene) film-forming resin to form the new improved film-forming resin, the new film-forming resin can increase the ultraviolet transparency of the photoresist and increase the photosensitivity of the photoresist, and the large cyclic structure of the film-forming resin can increase carbon compactness, reduce the free volume of polymerization chains, increase heat resistance and increase the etching resistance of the film-forming resin; large lateral chains can improve the problem of acid diffusion, increase dissolution difference and lower image edge roughness.

The invention discloses a method for preparing a novel micron and nano composite structure patterned sapphire substrate. The method specifically includes the following steps that: a) a conical micron patterned sapphire substrate with high curvature and high depth-to-width is prepared through photoetching and etching process; b) a metal nickel layer is formed on the micron patterned sapphire substrate through evaporation, film coating and deposition; c) the sapphire substrate coated with the metal nickel layer is subjected to annealing, so that a micron patterned sapphire substrate with nickel nanoparticles can be obtained; d) with the nickel nanoparticles adopted as a mask, the sapphire substrate is subjected to ICP etching, so that a plurality of nano sapphire column arrays can be formed on the conical patterned sapphire substrate; e) and residual nickel nanoparticles are removed, so that a patterned sapphire substrate with a micron and nano composite structure can be formed. The method for preparing the micron and nano composite structure has the advantages of convenience, quickness and low cost. With the method adopted, and a large-area nano pattern can be prepared on a micron pattern with high depth-to-width ratio and high curvature quickly.

The invention relates to an antireflective coating composition comprising a crosslinker and a crosslinkable polymer capable of being crosslinked by the crosslinker, where the crosslinkable polymer comprises a unit represented by structure (1):

[-A-B-C-]  (1)

where A is a fused aromatic ring, B has a structure (2), and C is a hydroxybiphenyl of structure (3)

where R₁ is C₁-C₄alkyl and R₂ is C₁-C₄alkyl.

The invention further relates to a process for forming an image using the composition.

The invention discloses a method for preparing a superconductive nanometer device by a negative electron beam resist exposure process. The method mainly comprises the following steps of: spinning a hydrogen silsesquioxane (HSQ) resist on a superconductive thin film; pre-drying; designing an exposure graph; exposing by two steps; developing; fixing; and etching. By using the method, the superconductive nanometer device which is stable in performance and uniform in line width and has the minimum line width of 15 nm can be prepared. Residues do not exist in an electrode region after the etching step is performed by setting an exposure amount in different regions and changing the thickness of an exposure product in the corresponding region, so that electrical measurement is facilitated. HSQ has high anti-etching performance and is suitable to serve as an etching mask of a hard superconductive metal material, so that the etching selection ratio can be increased. An electrode and the device are obtained through one-time etching; no contact potential difference exists between the electrode and the device; and the success rate of the device is high. Furthermore, a plurality of independent micro electric bridges are exposed on the same thin film, so that the efficiency of integrating and measuring the electric bridges can be improved, and the material utilization rate is increased; and the superconductive nanometer device has great significance for research on nanometer structures made of rare materials.

The invention provides a semi-conductor device with self-aligning contact holes and a manufacture method of the semi-conductor device. The semi-conductor device comprises a semiconductor substrate, at least two metal grids, etched barrier layers and dielectric layers, wherein the etched barrier layers are formed on the surfaces of the metal grids; each etched barrier layer comprises a first etched barrier layer and a second etched barrier layer; the dielectric layers are formed on the etched barrier layers; each dielectric layer comprises a first dielectric layer and a second dielectric layer. As the upper surfaces of the metal grids are lower than those of the first etched barrier layers, the metal grids and the first etch barrier layers are different in height; the second etched barrier layers are arranged in first grooves formed between the upper surfaces of the metal grids and the upper surfaces, relative to the metal grids, of the first etched barrier layers, so as to improve the anti-etch capability of the upper parts of the metal grids. The phenomenon of the short circuit communication between the self-aligning contact holes and the metal grids caused when the metal grids are exposed during the forming of the self-aligning contact holes is eliminated.

The present invention relates to a novel absorbing antireflective coating composition comprising a novel crosslinkable polymer comprising at least one repeat unit (A) having structure (1), at least repeat (B) unit having a structure (2), and at least one repeat unit (C) having structure (3)

where D is a direct valence bound or C(R₁)(R₂) methylene moiety where R₁ and R₂ are independently H, C₁-C₈ alkyl, C₃-C₂₄ cycloalkyl or C₆-C₂₄ aryl; Arⁱ, Arⁱⁱ, Arⁱⁱⁱ and Ar^iv are independently phenylenic and naphthalenic moiety, R₃ and R₄ are independently hydrogen or C₁-C₈ alkyl; and R₅ and R₆ are independently hydrogen or C₁-C₈ alkyl; and a solvent. The invention also relates to a process for forming an image using the novel antireflective coating composition.

The invention provides a photosensitive imaging combination which is characterized in that the combination comprises a photosensitive resin, a photoinitiator, a diluent, a thermal curing agent, filler and additives; wherein, the weight percentages of the combination components are as follows: 20 to 80 percent of photosensitive resin, 0.5 to 15 percent of photoinitiator, 5 to 40 percent of diluent, 0.2 to 15 percent of thermal curing agent and 3 to 40 percent of filler. A film made of the combination is provided with better heat resistance, anti-corrosion capability and fitting capability. When the combination is applied to the inner-layer circuit preparation of multi-layer printed circuit boards, the boards with etched circuits can be directly laminated without removing anti-corrosion inks, thus directly avoiding the film-removing process and the copper face coarsening process (brownification or melanization).

In order to overcome the defects of the traditional liquid photoimagable etching and plating resist ink during use, the invention provides novel etching and plating resist ink of a hydrophobic printed circuit board. The ink can realize mutual benefits of social benefits and economic benefits on the aspects of environment protection, labor protection, water resource and electric energy saving, improved manufacture efficiency and reduced cost of the printed circuit board, and the like without using an organic solvent, is a novel environmental-friendly, economic and energy-saving product according with the 3E (Efficacy, Efficiency and effectiveness) idea, and can replace the traditional generally used liquid photoimagable etching and plating resist ink to be applied under the condition of no change of equipment and conditions of the process and the manufacture procedure of the traditional printed circuit board.

The invention discloses a phenolic positive photoresist with etching resistance. The phenolic positive photoresist comprises the following main components: phenolic resin, a photosensitive compound and a solvent. The phenolic positive photoresist is characterized by also containing 0.5-30wt% of metal compound capable of being dissolved into the solvent. According to the photoresist disclosed by the invention, in a dry etching process after photoetching, physical bombardment and chemical reaction double etching is carried out on adhesive film patterns by plasma, volatile reactants formed by carbon and oxygen components in an adhesive layer are removed while the metal components are slowly deposited, and a new metal protection layer is formed on the surface of an adhesive film, thereby achieving the target of improving the etching resistance of the photoresist. The photoresist disclosed by the invention can be widely used for the field of production of microelectronic components requiring dry etching.

The invention relates to the field of micro-electronics, particularly a copper subsequent interconnection technique. In the copper subsequent interconnection technique, a hard mask technology is utilized to enhance the etching resistance of the non-etching region in the subsequent etching process and reduce the drain current increase caused by the decreased thickness of the insulating material between metal conductors on the premise of keeping the chip area unchanged, thereby enhancing the yield of the device.

The invention provides a PC/ABS (Polycarbonate/Acrylonitrile Butadiene Styrene) composition with a good paint spraying property and a preparation method of the PC/ABS composition. The composition is prepared from the following components in parts by weight: 50 to 80 parts of PC resin, 10 to 40 parts of ABS resin, 3 to 5 parts of talcum powder, 0.1 to 1 part of an antioxidant and 0.1 to 1 part of a lubricant. Compared with the prior art, the PC/ABS composition provided by the invention has the characteristics that the talcum powder is added so that the PC/ABS composition is separated out on the surface of a part in an injection molding process, the paint etching resisting capability of the part is improved and the problems of low fitting and cracking in a paint spraying process are solved; meanwhile, PC/ABS is properly etched through paint so that the bonding force after the paint spraying is guaranteed; the prepared PC/ABS composition has good paint spraying property and the bonding force of the paint is high.