9results about How to "Increased etch resistance" patented technology

This invention discloses a semiconductor structure, a method for forming the same, and electronic components. The method for forming the semiconductor structure includes: providing a semiconductor substrate; forming a mask layer comprising an SOG material layer, a SiON material layer, and a SOC material layer on the surface of the semiconductor substrate; and forming a photoresist layer on the surface of the mask layer. This invention adds a mask layer comprising an SOG material layer, a SiON material layer, and a SOC material layer between the photoresist and the silicon wafer. Subsequently, the mask layer is etched using a layer of photoresist as a mask to transfer the target pattern on the photoresist to the mask layer. The etching resistance of the mask layer is then used to etch the silicon wafer. During this process, the high resolution of the target pattern is maintained, thus improving the etching resistance without increasing the thickness of the photoresist film.

The invention relates to a polymer, a chemically amplified resist composition and a pattern forming method. The present invention provides a polymer used in a chemically amplified resist composition having excellent solvent solubility, high sensitivity, high contrast, and excellent lithography performance such as EL, LWR, CDU, and DOF in optical lithography using high-energy rays, a chemically amplified resist composition containing the polymer, and a pattern forming method using the chemically amplified resist composition. [Solution] A polymer containing a repeating unit a represented by formula (a) and a repeating unit b represented by formula (b).

This invention discloses a femtosecond laser direct-write photoresist film-forming resin, a negative femtosecond laser direct-write photoresist, and a patterning method thereof. The chemical structure of the femtosecond laser direct-write photoresist film-forming resin is shown in Formula (I). This resin is a random copolymer with a weight-average molecular weight (Mw) between 1.7 and 2.2 kDa and a distribution index (D) between 1.4 and 2. The negative femtosecond laser direct-write photoresist provided by this invention comprises 3-5 wt% of the aforementioned film-forming resin, 5-10 wt% of an active monomer, 0.1-1 wt% of a two-photon initiator, and 85-91 wt% of a solvent. The film-forming resin of this invention can improve the etching resistance of the negative lithography composition, enhance the adhesion between the film and the wafer, thereby improving the resolution of the lithographic pattern and improving the pattern morphology.

The invention belongs to the technical field of photoetching, and provides a naphtholactam polymer and a preparation method thereof, a hard mask composition and a method for forming a pattern. The naphtholactam polymer has a structure as shown in a formula 1, and n is an integer from 1 to 500; r1 is hydrogen, 4-10-membered naphthenic base or substituted or unsubstituted aryl with the carbon atom number of 6-30; and L is alkylene with the carbon atom number of 1-10. The hard mask formed by the hard mask composition not only has relatively high heat resistance and etching resistance, but also has good gap filling and planarization capabilities. Formula 1

This application discloses a spin-coating carbon composition, a semiconductor fabrication method, and a semiconductor device. The spin-coating carbon composition comprises a cyclic phenolic resin. The cyclic phenolic resin used in this invention has the characteristics of small molecular weight, narrow molecular weight distribution, and active crosslinking groups distributed on the resin periphery. The spin-coating carbon composition based on the cyclic phenolic resin of this invention, while maintaining excellent coating performance, can significantly improve the thermal stability, etching resistance, and pattern fidelity of the thin film, providing a new generation of hard mask materials for advanced semiconductor manufacturing.

The invention relates to the technical field of photosensitizers, in particular to a fluoride-free onium salt type photoacid generator, a preparation method of the fluoride-free onium salt type photoacid generator and a chemical amplification type photoresist composition. The onium salt type comprises a sulfonium salt type and an iodonium salt type, and the application of fluoride-free anion design in different cation structures is expanded. The onium salt acid generator is stable in structure, high in photosensitivity, free of fluorine elements, suitable for KrF and ArF wavelength photoetching processes of 248 nm and 193 nm and applied to a photoresist composition, and obtained photoresist has high resolution, good photosensitivity and excellent thermal stability and etching resistance.

This invention discloses a class of tin-oxygen metal clusters coordinated with dialkyl and organic cyclic carboxylic acids, their synthesis, and applications. These clusters exhibit higher reactivity due to the presence of more Sn atoms and more Sn-C bond reaction sites. The tin-oxygen metal clusters have the structure of general formula I.

The application provides a thick film positive photoresist composition, a preparation method and application thereof. The thick film positive photoresist composition comprises 70-90 parts of a base resin, 10-30 parts of a photosensitive compound and 100-150 parts of a solvent A; the base resin comprises a benzophenone modified phenolic resin and optionally an unmodified phenolic resin; the mass percentage of benzophenone groups in the base resin is 0.8-7.5% based on 100% of the mass percentage of the base resin; the photosensitive compound comprises a non-benzophenone photosensitive compound and optionally a benzophenone compound; the mass percentage of the benzophenone compound is less than or equal to 3.0% based on 100% of the mass percentage of the photosensitive compound. The application improves the uniformity of the benzophenone structure in the thick film positive photoresist composition by designing the specific composition of the thick film positive photoresist composition, thereby improving the steepness of the photoresist and realizing the development of the pattern.

The present disclosure relates to a semiconductor structure manufacturing method and a semiconductor structure. The semiconductor structure manufacturing method comprises: providing a substrate, the substrate comprising a substrate and a signal line on the substrate; forming at least one initial spacer layer on the sidewall of the signal line, and performing a nitriding treatment on the at least one initial spacer layer to obtain at least one spacer layer. The present disclosure increases the nitrogen content of the nitride layer in the spacer layer by performing a nitriding treatment on the spacer layer as a bit line isolation structure, thereby improving the etching resistance of the spacer layer, improving the sensitivity of the semiconductor device, and ensuring that the semiconductor device has a write recovery time that meets the requirements. At the same time, the increase in the nitrogen content on the nitride layer in the spacer layer reduces the possibility of short bit line contact or loss of bit line isolation structure when the spacer layer is thin. In addition, the nitriding of the oxide layer in the spacer layer can improve the etching resistance of the spacer layer, both increasing the thickness of the oxide layer and reducing the thickness of the nitride layer, thereby improving the problem of bit line parasitic capacitance.