31results about How to "Increased etch resistance" patented technology

A preparation method for improving the etching resistance of an yttrium oxide coating comprises the following steps that after a high-purity sintered aluminum oxide substrate subjected to ultrasonic cleaning is fed into a coating process chamber, the coating process chamber is vacuumized to reach a preset vacuum degree; argon is introduced into the coating process chamber through the first gas ion source, and argon plasma is released after ionization so as to carry out plasma cleaning on the high-purity sintered alumina substrate; an yttrium oxide coating is deposited on the surface of the high-purity sintered aluminum oxide substrate subjected to plasma cleaning in a magnetron sputtering mode, meanwhile, oxygen is introduced into the coating process cavity through a second gas ion source, oxygen plasma is released after ionization, and oxygen vacancies are formed in the yttrium oxide coating. According to the method, the oxygen plasma is adopted to participate in the deposition process of the yttrium oxide coating, so that oxygen vacancies are formed in the yttrium oxide coating, and the physical etching resistance of the yttrium oxide coating is improved.

The invention relates to the technical field of photoresist, in particular to a modification method suitable for photoresist. The photoresist is a positive photoresist and comprises phenolic polymer resin, a diazo naphthoquinone type photoinitiator, a solvent and an additive. According to the invention, a multi-carbon-based enol compound is used as a precursor to prepare a diazo naphthoquinone sulfonate type photosensitive compound, an aldehyde group carried in the diazo naphthoquinone sulfonate type photosensitive compound and an amine additive are used for grafting a photoinitiator-phenolic resin coupling product through a Schiff base reaction, and the dissolution inhibition effect of the photoinitiator-phenolic resin coupling product is adjusted; therefore, key characteristics such as resolution, etching resistance, edge roughness after exposure and development and the like of the photoresist are enhanced.

The invention provides polyacrylate alkali-soluble resin as well as a preparation method and application thereof. The polyacrylate alkali-soluble resin has a structure as shown in a general formula (VI). According to the polyacrylate alkali-soluble resin provided by the invention, the six-membered cyclic anhydride with a rigid structure is introduced into a main chain, and the characteristics of the rigid structure and ester groups of the cyclic anhydride are utilized, so that the etching resistance and the adhesion to a copper substrate can be effectively enhanced, and the problems of short circuit and open circuit in a circuit board manufacturing process are reduced; the photosensitive dry film prepared from the photosensitive resin composition has the advantages of excellent adhesive force, high resolution ratio, high film stripping speed and no large film residue residue.

The invention relates to a high-etching-resistance yttrium-magnesium complex-phase transparent ceramic and a preparation method and application thereof.The preparation method comprises the following steps that magnesium oxide and yttrium oxide are mixed according to a preset proportion to obtain a base material, yttrium-containing fluoride is added to serve as a sintering aid, the adding mass of the yttrium-containing fluoride accounts for 1-10% of the mass of the base material, and the base material is sintered to obtain the high-etching-resistance yttrium-magnesium complex-phase transparent ceramic; forming a multiphase ceramic green body; and sintering the multiphase ceramic green body in an inert oxygen-free atmosphere to obtain the yttrium-magnesium multiphase transparent ceramic with high etching resistance, the etching depth of the yttrium-magnesium multiphase transparent ceramic with high etching resistance is 300 to 500 nm / h. Compared with the prior art, the yttrium-containing fluoride is adopted as the sintering aid, a stable protective fluorinated layer is formed on the surface of the ceramic, the etching resistance of the ceramic is improved, meanwhile, the risk of decomposition and impurity introduction in an etching environment is avoided, and the high-etching-resistance yttrium-magnesium complex-phase transparent ceramic is particularly suitable for etching equipment in semiconductor manufacturing.

The invention provides a series of novel monomolecular resin based on the metallocene compound, the monomolecular resin is used as a single-component non-chemical amplification photoresist, the problems of non-uniform distribution of an acid generator and an anti-acid diffusion agent, non-uniform acid diffusion and the like in a chemical amplification photoresist are avoided, and an obtained pattern has high resolution and low line width roughness. # imgabs0 #

The invention belongs to the technical field of photoresist materials, and particularly relates to an etching-resistant ArF photoresist and a preparation method thereof. The etching-resistant ArF photoresist is prepared from the following raw materials in parts by weight: 90 to 100 parts of film-forming resin, 5 to 15 parts of a photoacid generator, 0.5 to 2 parts of organic alkali, 3 to 10 parts of an etching-resistant additive and 3000 to 5000 parts of a photoresist solvent, and the etching-resistant additive is a cholic acid derivative; the film-forming resin comprises metacrylic acid ester with a side chain containing lactone, metacrylic acid ester with a side chain containing an aliphatic ring protecting group and metacrylic acid ester with a side chain containing a polar group; according to the etching-resistant ArF photoresist disclosed by the invention, the photoresist with a relatively high-resolution pattern can be formed; the photoresist has high resolution and etching resistance, and the application range of the photoresist can be widened.

The invention relates to the technical field of photoresist, in particular to G / I line photoresist suitable for manufacturing liquid crystal display panels and semiconductors. The photoresist is a positive photoresist and comprises phenolic polymer resin, a diazo naphthoquinone type photoinitiator, a solvent and an additive. According to the invention, the multi-carbon-based enol compound is used as a precursor to prepare the diazo naphthoquinone sulfonate type photosensitive compound, and the photosensitive compound is matched with the phenolic polymer resin, the solvent and the additive, so that the prepared photoresist has high resolution, good sensitivity, excellent thermal stability and etching resistance.

The invention provides a method for improving the reliability of a device, and the method comprises the steps: 1, providing a substrate, forming an interlayer dielectric layer on the substrate, forming a groove in the interlayer dielectric layer, and sequentially forming a high-K dielectric layer and a cap layer on the side wall and the bottom of the groove; 2, sequentially forming a barrier layer and a PMOS (P-channel Metal Oxide Semiconductor) work function metal layer on the cap layer, and then removing the PMOS work function metal layer in an NMOS (N-channel Metal Oxide Semiconductor) region; 3, reducing oxide layers formed on the surfaces of the barrier layer and the PMOS work function metal layer by using hydrogen; 4, nitriding the surface of the barrier layer and the surface of the PMOS work function metal layer by using ammonia gas; and 5, sequentially forming an NMOS (N-channel Metal Oxide Semiconductor) work function metal layer and a metal gate, and filling the groove. Before the NMOS work function metal layer is formed, the pretreatment procedures of hydrogen reduction and ammonia nitridation are added, the work function adjusting effect of the PMOS work function metal layer is achieved while the anti-etching capacity of the barrier layer is improved, and therefore the reliability of the device is improved.

The invention discloses a semiconductor structure and a forming method thereof, and the method comprises the steps: a gate structure is arranged on a substrate, a source-drain region is arranged in the substrate at at least one side of the gate structure, and an interlayer dielectric layer is formed on the gate structure and the substrate; a first groove and a second groove are formed in the interlayer dielectric layer, the position of the first groove corresponds to that of the gate structure, and the position of the second groove corresponds to that of the source-drain region; forming a lateral barrier layer on the side wall of the first groove and the side wall of the second groove; dielectric structures are formed in the first groove and the second groove of which the side walls are provided with the lateral barrier layers; a first through hole and a second through hole which penetrate through the dielectric structure and the interlayer dielectric layer in sequence are formed, the first through hole is formed in the gate structure, and the second through hole is formed in the source-drain region. The lateral barrier layer delays the etching rate of the first through hole and the second through hole in the direction parallel to the surface of the substrate, and the phenomenon that the critical sizes of the first through hole and the second through hole are too large due to over-etching at the top positions of the first through hole and the second through hole is effectively reduced.

The invention provides a method for preparing an etching-resistant Ni hard mask layer, and belongs to the technical field of micro-nano processing and thin films. The Ni film is prepared through a magnetron sputtering method, and the quality and performance of the Ni film are regulated and controlled by regulating and controlling key process parameters such as the Ar / H2 gas flow ratio, the sputtering air pressure, the substrate heating temperature and the sputtering power in the magnetron sputtering process. By the adoption of the method, the Ni film which is free of a columnar structure, smooth in surface, good in corrosion resistance, high in etching selection ratio and high in deposition rate is prepared.

This invention discloses a semiconductor structure, a method for forming the same, and electronic components. The method for forming the semiconductor structure includes: providing a semiconductor substrate; forming a mask layer comprising an SOG material layer, a SiON material layer, and a SOC material layer on the surface of the semiconductor substrate; and forming a photoresist layer on the surface of the mask layer. This invention adds a mask layer comprising an SOG material layer, a SiON material layer, and a SOC material layer between the photoresist and the silicon wafer. Subsequently, the mask layer is etched using a layer of photoresist as a mask to transfer the target pattern on the photoresist to the mask layer. The etching resistance of the mask layer is then used to etch the silicon wafer. During this process, the high resolution of the target pattern is maintained, thus improving the etching resistance without increasing the thickness of the photoresist film.

The invention relates to a polymer, a chemically amplified resist composition and a pattern forming method. The present invention provides a polymer used in a chemically amplified resist composition having excellent solvent solubility, high sensitivity, high contrast, and excellent lithography performance such as EL, LWR, CDU, and DOF in optical lithography using high-energy rays, a chemically amplified resist composition containing the polymer, and a pattern forming method using the chemically amplified resist composition. [Solution] A polymer containing a repeating unit a represented by formula (a) and a repeating unit b represented by formula (b).

This invention discloses a femtosecond laser direct-write photoresist film-forming resin, a negative femtosecond laser direct-write photoresist, and a patterning method thereof. The chemical structure of the femtosecond laser direct-write photoresist film-forming resin is shown in Formula (I). This resin is a random copolymer with a weight-average molecular weight (Mw) between 1.7 and 2.2 kDa and a distribution index (D) between 1.4 and 2. The negative femtosecond laser direct-write photoresist provided by this invention comprises 3-5 wt% of the aforementioned film-forming resin, 5-10 wt% of an active monomer, 0.1-1 wt% of a two-photon initiator, and 85-91 wt% of a solvent. The film-forming resin of this invention can improve the etching resistance of the negative lithography composition, enhance the adhesion between the film and the wafer, thereby improving the resolution of the lithographic pattern and improving the pattern morphology.

The present invention relates to a material for forming an organic film, a substrate, a method for forming an organic film, a method for forming a pattern, and a compound for forming an organic film. The subject and object of the present invention are to provide a compound having a dioxin structure that can be hardened even under film-forming conditions in an inert gas, can form an organic underlayer film with excellent heat resistance, filling or planarization characteristics of a pattern formed on a substrate, and good film-forming properties and adhesion to the substrate, and a material for forming an organic film containing the compound. The solution of the present invention is a material for forming an organic film, characterized by containing: (A) a compound for forming an organic film represented by the following general formula (1A), and (B) an organic solvent. [Chemical formula 1] #imgabs0# In the formula, W1 is a tetravalent or hexavalent organic group, n1 represents an integer of 1 or 2, n2 represents 2 or 3, and R1 each independently represents any one of the following formula (1B); in addition, the hydrogen atoms of the benzene ring in the formula may also be substituted with fluorine atoms. [Chemical formula 2] #imgabs1#

A semiconductor structure and a method for forming the same, the method comprising: providing a substrate, the substrate comprising a core region for forming a core device; forming a dummy gate on the substrate; forming source-drain doping regions in the substrate on both sides of the dummy gate; forming an interlayer dielectric layer covering the source-drain doping regions on both sides of the dummy gate; removing the dummy gate and forming a gate opening in the interlayer dielectric layer; ion doping the interlayer dielectric layer in the core region, suitable for improving the etching resistance of the interlayer dielectric layer in the core region; after forming the gate opening and after ion doping, forming a gate filling the gate opening. The embodiments of the present invention are conducive to improving the production yield and the performance of semiconductor structures.

The invention provides a preparation method of a Y2O3-BZO composite coating suitable for etching machine parts. The preparation method comprises the following steps: S1, taking a substrate, cleaning, blow-drying, and carrying out secondary cleaning by a UV light cleaning machine; s2, the substrate in the step S1 is placed in a magnetron sputtering coating machine, vacuumizing and heating are carried out at the same time, argon is introduced after background vacuum is achieved, and pre-sputtering is carried out on Y2O3 and BZO target materials; s3, after pre-sputtering is completed, a baffle is opened, the air pressure of a cavity is adjusted, formal sputtering is started, the Y2O3 target material and the BZO target material are sputtered in an alternate sputtering mode in formal sputtering to form a stacked composite coating, and the substrate is taken out after sputtering is completed; and S4, carrying out vacuum annealing on the substrate in the step S3, and naturally cooling to obtain the Y2O3-BZO stacked composite coating. The composite coating adopts an alternate sputtering form to form a stacked composite coating, so that the composite coating has good etching resistance, the service life of an etching machine can be greatly prolonged, and pollution to wafers is reduced.

The invention provides a series of novel monomolecular resin based on the metallocene compound, the monomolecular resin is used as a single-component non-chemical amplification photoresist, the problems of non-uniform distribution of an acid generator and an anti-acid diffusion agent, non-uniform acid diffusion and the like in a chemical amplification photoresist are avoided, and an obtained pattern has high resolution and low line width roughness. # imgabs0 #

The invention belongs to the technical field of photoetching, and provides a naphtholactam polymer and a preparation method thereof, a hard mask composition and a method for forming a pattern. The naphtholactam polymer has a structure as shown in a formula 1, and n is an integer from 1 to 500; r1 is hydrogen, 4-10-membered naphthenic base or substituted or unsubstituted aryl with the carbon atom number of 6-30; and L is alkylene with the carbon atom number of 1-10. The hard mask formed by the hard mask composition not only has relatively high heat resistance and etching resistance, but also has good gap filling and planarization capabilities. Formula 1

The invention discloses a photoresist main body material, a preparation method thereof, a photoresist composition containing the photoresist main body material and a photoresist coating. The general formula structure of the photoresist main body material is shown as a formula I. In the technical scheme of the invention, self-made carbon quantum dots are used as a main body structure to carry out functional group modification to obtain a photoresist main body material, and then the photoresist main body material is used as a raw material to prepare the photoresist composition and the photoresist coating. Compared with the currently disclosed photoresist material, the prepared photoresist main body material has the following advantages: on one hand, the original typical characteristics of the carbon quantum dots, such as small particle size, narrow particle size distribution, high carbon content and the like, are reserved, so that the problems of overlarge molecular size, poor etching resistance and the like of the existing photoresist are effectively solved; on the other hand, the photophysical property and the photoetching performance of the photoresist main body material can be changed by regulating and controlling the groups connected with the carbon atom points, so that the photoresist composition meeting the application requirements is prepared. # imgabs0 #

This application discloses a spin-coating carbon composition, a semiconductor fabrication method, and a semiconductor device. The spin-coating carbon composition comprises a cyclic phenolic resin. The cyclic phenolic resin used in this invention has the characteristics of small molecular weight, narrow molecular weight distribution, and active crosslinking groups distributed on the resin periphery. The spin-coating carbon composition based on the cyclic phenolic resin of this invention, while maintaining excellent coating performance, can significantly improve the thermal stability, etching resistance, and pattern fidelity of the thin film, providing a new generation of hard mask materials for advanced semiconductor manufacturing.

The invention relates to the technical field of photosensitizers, in particular to a fluoride-free onium salt type photoacid generator, a preparation method of the fluoride-free onium salt type photoacid generator and a chemical amplification type photoresist composition. The onium salt type comprises a sulfonium salt type and an iodonium salt type, and the application of fluoride-free anion design in different cation structures is expanded. The onium salt acid generator is stable in structure, high in photosensitivity, free of fluorine elements, suitable for KrF and ArF wavelength photoetching processes of 248 nm and 193 nm and applied to a photoresist composition, and obtained photoresist has high resolution, good photosensitivity and excellent thermal stability and etching resistance.

This invention discloses a class of tin-oxygen metal clusters coordinated with dialkyl and organic cyclic carboxylic acids, their synthesis, and applications. These clusters exhibit higher reactivity due to the presence of more Sn atoms and more Sn-C bond reaction sites. The tin-oxygen metal clusters have the structure of general formula I.

The application provides a thick film positive photoresist composition, a preparation method and application thereof. The thick film positive photoresist composition comprises 70-90 parts of a base resin, 10-30 parts of a photosensitive compound and 100-150 parts of a solvent A; the base resin comprises a benzophenone modified phenolic resin and optionally an unmodified phenolic resin; the mass percentage of benzophenone groups in the base resin is 0.8-7.5% based on 100% of the mass percentage of the base resin; the photosensitive compound comprises a non-benzophenone photosensitive compound and optionally a benzophenone compound; the mass percentage of the benzophenone compound is less than or equal to 3.0% based on 100% of the mass percentage of the photosensitive compound. The application improves the uniformity of the benzophenone structure in the thick film positive photoresist composition by designing the specific composition of the thick film positive photoresist composition, thereby improving the steepness of the photoresist and realizing the development of the pattern.

The invention relates to a resist underlayer film forming composition, a pattern forming method, and a resist underlayer film forming method. The present invention addresses the problem of providing a composition for forming a resist underlayer film, said composition being capable of forming a resist underlayer film exhibiting excellent dry etching resistance compared to known organic underlayer film materials. A composition for forming a resist underlayer film, characterized by containing (A) a polymer having a structure represented by general formula (1) as a repeating unit and (B) an organic solvent, the molecular weight of the (A) polymer being 300-3,000, and the (A) polymer not containing a repeating unit containing a hydroxyl group as a substituent and not containing a repeating unit containing a heteroaromatic ring. In formula (1) in # imgabs0 #, Ar is an unsubstituted divalent aromatic group having 6 to 30 carbon atoms.

The embodiment of the invention discloses a part of semiconductor processing equipment and a manufacturing method of the part. The component includes: a first silicon carbide layer; the second silicon carbide layer is arranged on one side of the first silicon carbide layer, and the number of crystal boundaries of the second silicon carbide layer is different from the number of crystal boundaries of the first silicon carbide layer.

The invention discloses a structure for exciting SPPs, which comprises a silicon dioxide substrate, at least one nanometer micro disc is arranged on the upper surface of the silicon dioxide substrate, the nanometer micro disc comprises a metal disc, and a metal triangular bulge extending outwards is arranged at the outer edge of the metal disc; and a plurality of channels consisting of cuboid nano structures are formed on the surface of the metal disc. The invention further discloses a preparation method of the SPPs excitation structure and a light field energy transmission method of the SPPs excitation structure. According to the invention, SPPs can be effectively excited and controlled and excited on the nano size, accurate regulation and control of the transmission path of the SPPs are realized, a local electromagnetic field is enhanced, and meanwhile, the material has efficient light-substance interaction capability, so that further development of the SPPs in nano photonics and related application fields is promoted.

The invention discloses a forming method of a semiconductor structure. The forming method comprises the steps of forming a first oxide layer on a substrate; forming a sacrificial layer on the first oxide layer of the second region, wherein the sacrificial layer exposes the first region; forming a second oxide layer on the first oxide layer exposed out of the sacrificial layer, wherein the second oxide layer covers part of the side wall of the sacrificial layer; the sacrificial layer and the first oxide layer located at the bottom of the sacrificial layer are sequentially removed by adopting an anisotropic etching process, so that an opening is defined by the side walls of the first oxide layer and the second oxide layer in the first region and the top surface of the substrate in the second region; and forming a third oxide layer on the substrate at the bottom of the opening, wherein the top surface of the third oxide layer is lower than the top surface of the second oxide layer. According to the embodiment of the invention, the width of the slope formed on the side wall of the opening is reduced or the slope is eliminated, the steepness of the side wall of the opening is improved, and the performance of the semiconductor structure is correspondingly improved.

A semiconductor structure and a method for forming the same, the method comprising: providing a substrate and a fin protruding from the substrate, the substrate comprising a first region and a second region; forming a first work function layer on the fins of the first region and the second region; forming a second work function layer on the first work function layer; forming a third work function layer on the second work function layer; forming a protective layer on the third work function layer; forming a photoresist coating on the substrate of the first region and the second region, the photoresist coating covering the protective layer; removing the photoresist coating of the first region to expose the protective layer of the first region; removing the exposed protective layer; removing the third work function layer of the first region. The present invention helps to protect the second work function layer of the first region and prevent the second work function layer of the first region from being etched during the process of removing the photoresist coating of the first region.

The present invention discloses a suspension plasma spraying slurry and a preparation method and application thereof, and relates to the field of plasma etching resistant ceramic coatings. The method comprises the following steps: S1, pre-treating the substrate; S2, heat-treating the pre-treated substrate; S3, spraying the pre-treated spraying slurry with APS to the substrate surface treated by S2; S4, spraying the pre-treated spraying slurry with SPS to the coating surface obtained by S3; wherein, the pre-treated spraying slurry in S4, the pre-treatment method comprises: stirring the spraying slurry and heating it to 173-190°C, maintaining it for 10-30min, and continuing to heat it to 220-240°C, and maintaining it for 10-30min. The present invention further improves the bonding strength of the yttrium oxide coating, reduces the porosity and surface roughness, and the obtained coating has excellent properties by performing multiple specific pre-treatment or heat treatment steps on the substrate surface, the spraying slurry and the coating.

The invention discloses a preparation method of a copper-based yttrium oxide coating with self-repairing performance. The preparation method comprises the following steps: sputtering and depositing on the surface of an oxygen-free copper substrate by adopting a pulse direct-current magnetron sputtering mode to form the yttrium oxide coating; the oxygen-free copper base body containing the yttrium oxide coating is conveyed into a cooling chamber for standing and cooling to form a coating base body; and the coating base body is fed into a tubular furnace, argon and hydrogen mixed protective gas is introduced into the tubular furnace, furnace cooling is conducted after high-temperature annealing is conducted, and the copper-based yttrium oxide coating with the self-repairing performance is formed. After the copper-based yttrium oxide coating with the self-repairing performance cracks, oxygen-free copper of the substrate is combined with oxygen atoms in the environment to generate copper oxide which fills cracks, an embedded coating structure is formed, self-repairing of the coating is achieved, further cracking of the yttrium oxide coating is prevented, and the service life of the coating is prolonged. The copper oxide protective layer at the crack can effectively prevent oxygen from continuously permeating into the lower layer of the coating and the substrate, so that further oxidation and damage of the coating are slowed down, and the service life of the coating is prolonged.