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2772results about How to "Reduce reflectivity" patented technology

EUV collector debris management

A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.
Owner:ASML NETHERLANDS BV

Method for constructing anti-reflection microstructure using single layer nanometer particle as etching blocking layer

The invention belongs to the surface patterning microstructure construction technique, which relates to a method for constructing a microstructure with anti-reflection performance on a foundation base by combining the self-assembly technique with the reactive ion beam etching technique. The method is to take monolayer polymeric micro-spheres, silicon dioxide micro-spheres and nano-particles of metal or metal oxides as a barrier layer and implement the RIE etching to the foundation base, then an approximate cone-shaped microstructure is constructed on the foundation base, and the structure has extreme high anti-reflection performance, thereby effectively improving the light energy utilization rate, reducing the interference of veiling glare in an optical system, increasing the optical transmittance, and further improving the sensitivity and stability of the optical system, and the method can be used for constructing large-area anti-reflection structures. The method of the invention has advantages of simple operation, changeable foundation base, strong applicability, good repeatability, low cost, high efficiency, adjustable anti-reflective applied wavelength and conformity to industrialized standards, and can be used for making photoelectric devices such as solar batteries and white light sensors.
Owner:JILIN UNIV
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