1338 results about "Lithography" patented technology

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

An image sensor with one or more imaging sensor layers and / or one or more color filter layers is provided. Imaging sensor layers sense different combinations of wavelengths of light depending in part on filtered light passing through the color filter layers. The color filter layers, which can be tunable filters, plasmonic color filters or dielectric subwavelength grating filters, allow certain colors of light to pass through to the imaging sensor layers and block others. The image sensor is connected to control circuitry that measures the properties of light received at each imaging sensor layer, reconstructs the color components of each pixel of the imaging sensor layers based on these measurements, and generates full-color image data from the color components. Methods of manufacturing the image sensor are also provided using lithography and securing the layers in a sensor stack using a bonding substrate.

An image sensor with one or more imaging sensor layers and / or one or more color filter layers is provided. Imaging sensor layers sense different combinations of wavelengths of light depending in part on filtered light passing through the color filter layers. The color filter layers, which can be tunable filters, plasmonic color filters or dielectric subwavelength grating filters, allow certain colors of light to pass through to the imaging sensor layers and block others. The image sensor is connected to control circuitry that measures the properties of light received at each imaging sensor layer, reconstructs the color components of each pixel of the imaging sensor layers based on these measurements, and generates full-color image data from the color components. Methods of manufacturing the image sensor are also provided using lithography and securing the layers in a sensor stack using a bonding substrate.

According to the embodiment of the invention, the invention provides a photoetching signal simulation method, photoetching signal simulation equipment and a storage medium. The method comprises the following steps: determining an analog optical signal for a substrate with at least one protruding structure, wherein the analog optical signal indicates a signal formed on the substrate after light passes through a mask; determining a topology signal for the substrate, the topology signal being associated with the at least one protruding structure; and determining a lithography signal for the substrate based on the analog light signal and the topology signal. Therefore, the influence of the stacking of the at least one protruding structure and the photoresist on the signal on the substrate can be considered, and the accuracy of the photoetching signal can be improved.

The invention relates to the technical field of semiconductor manufacturing, photoetching alignment and feature recognition, and particularly discloses a photoetching alignment compensation system and method based on feature targeting. An exposed pattern on the surface of a wafer is used as a unique target reference, a built-in visual imaging structure coaxial with a photoetching light path is adopted, a sub-pixel-level feature extraction and dynamic reference real-time updating mechanism is combined, the dynamic deformation of the wafer is calculated, high-frequency compensation of a workpiece table is achieved, and nanoscale overlay precision is achieved. The core improvement of the invention lies in that a light path coaxial visual integrated structure is designed to solve the problem of external imaging parallax; a feature point self-adaptive weighted matching algorithm is provided, and the deformation compensation precision is improved; and constructing a reference map real-time micro-updating mechanism, and eliminating progressive deformation drift of the wafer. The system does not need to manufacture a special physical alignment mark, continuously verify a feature matching state in the whole exposure process and quickly trigger safety protection when the matching degree is abnormal, is suitable for a photoetching alignment process for manufacturing advanced process chips of 3nm and below, has an alignment error of less than or equal to 1.1 nm under a 12-inch wafer standard test condition, reduces the dependence on an ultra-precise workpiece table, and has a good application prospect. The system has the advantages of autonomous controllability, high interference resistance and controllable cost.

It is described a process for producing transparent ceramic bodies with at least two zones having different garnet composition, in particular in which one of said zones has composition Y3AI5O12. The invention is especially useful for the production of transparent ceramic bodies having preset complex shapes and / or a controlled complex distribution of doping ions.

The invention relates to the technical field of photoetching machine data transmission, and discloses an ultra-high-speed distributed data transmission synchronization system of a direct-writing photoetching machine. The system comprises a dynamic exposure pulse analysis module which constructs a distributed transmission delay calculation model based on historical operation data, collects data such as a laser trigger pulse sequence in real time and outputs a theoretical transmission synchronization value; the multi-channel time sequence offset detection module generates a node-level multi-channel time sequence offset matrix through multi-dimensional comparison of the theoretical value and the actual transmission time sequence; the spatial topology mapping module is combined with the physical position and the link impedance parameter to generate a time sequence abnormal propagation path probability distribution cloud picture so as to locate a high-delay area; and the dynamic bandwidth allocation module configures a transmission strategy according to the data, starts redundant channel parallel transmission for a high-delay area, and implements dynamic clock offset compensation for adjacent nodes, so that the synchronization stability and transmission efficiency of data transmission are effectively improved.

A control device (100) for controlling an actuator (200) for actuating an optical element (310) of an optical system (300), comprising a voltage measuring unit (110) coupled to the actuator (200), which is configured to provide a measuring voltage (V1) which is indicative of a control voltage (V2) applied to the actuator (200), and a charge source (120) which is configured to provide a control current (I1) for controlling the charge of the actuator (200) depending on a target position signal (P) for setting a position of the optical element (310) and the provided measuring voltage (V1).

A reticle enclosure includes a first cover having a first outer surface and a first inner surface and a second cover having a second outer surface and a second inner surface. The first cover and the second cover are joined together. The first cover and the second cover form an internal space therebetween configured to include a reticle. A catalyst layer is disposed on the first inner surface of the first cover and a dehumidification layer is disposed on the second inner surface of the second cover.

The invention provides a photoetching overlay pattern generation method and system for semiconductor manufacturing, and relates to the technical field of semiconductor photoetching. According to the method, an overlay performance target, measurement tool parameters and process parameters are unified as nominal conditions, layout dimensions and manufacturing constraints are unified as a constraint library, and a process chain joint model covering exposure, development, etching and measurement links is established; simulation and multi-target iterative optimization are carried out on the parameterized overlay mark under nominal conditions and disturbance conditions, an optimal mark with high measurement sensitivity, low measurement uncertainty and small system deviation is obtained, and association with design input is realized to support production chip casting and measurement.

Temperature control device (200) for temperature control of a position-sensitive component (102) of a lithography system (1), comprising a liquid line (208) for transporting a temperature control fluid (206), wherein the fluid line (208) has at least one first circumferential section (232) and at least one second circumferential section (234), which together form a closed circumference (U1) of the fluid line (208), and comprising at least one second circumferential section (234) comprising an elastic material (220) for damping a pressure fluctuation of the temperature control fluid (206), which is more elastic than a material (227) of the at least one first circumferential section (232).

The invention belongs to the field of integrated circuit design, and particularly relates to an integrated circuit photoetching hot spot detection method, a storage medium and equipment. The method comprises the following steps: constructing a layout classification model for identifying whether an input layout contains photoetching hot spots or not; the layout classification model sequentially comprises a front feature extraction module, a plurality of rear feature extraction modules, a feature fusion module and a full connection layer. The front feature extraction module is composed of common convolution, degrouping convolution, interactive convolution and an attention layer. The post-feature extraction module is composed of an enhanced interaction layer and an attention layer. Performing data enhancement on the hot-spot layout and sampling the non-hot-spot layout to form a balanced data set; and training the layout classification model by using the BCE loss introduced with label smoothing as a loss function. And inputting the slice image of the original layout into the trained layout classification model to realize photoetching hot spot detection. According to the invention, the problem that the detection precision and the false alarm rate are unbalanced in the existing scheme is solved.

The invention discloses a photoetching model modeling method and a computer program product, and relates to the technical field of semiconductors. The photoetching model modeling method comprises the following steps: integrating links of model parameter search, correction parameter search, model calibration and the like of an optical parameter group and a grid parameter group into a standardized modeling process capable of being automatically executed, so that repeated manual parameter setting is not needed, and the manual operation cost is reduced. In the standardized modeling process, firstly, model parameter search with high importance is executed, then, under the constraint of a target optical parameter group and a target grid parameter group, different correction parameter groups are traversed, and the correction search condition is achieved by taking the pattern deviation of a photoetching model output pattern and a measurement reference file under the correction parameter groups as a target. And the target correction parameter groups are screened, and the target photoetching model obtained based on calibration of the determined parameter groups is high in simulation precision and reliability.

Measuring device (100) for measuring a resistance-dependent measured quantity (T) on or in an optical system (10) of a lithography system (1), comprising: a current source (106) for generating a measuring current (I), a measuring line branch (114) and a reference line branch (116), a switching unit (118) for selectively connecting the power source in a reference switching position (120) to the reference line branch or in a measuring switching position (122) to the measuring line branch, a connection unit (126) arranged on the measuring line branch for optionally connecting a measuring resistor (104) or at least one calibration component (128, 130) electrically, a reference resistor (132) arranged on the reference line branch, a voltage sensing unit (136) for sensing a voltage (U R , U M) optionally on the reference line branch or the measuring line branch, and a control unit (112) for determining a parasitic resistance value (R) P ) the measuring device based on a reference voltage (U) detected in the reference switching position (120). R ) and a measured voltage (U) detected in the measuring switching position (122) in which one of the at least one calibration component (128, 130) is connected to the connection unit (126). M ).

A method for selecting a repair parameter set for particle beam-based repair of a defect in an object for lithography, in particular a lithography mask, comprises obtaining measured contour data of the object in a neighborhood of the defect, determining at least one repair parameter set for repairing the defect, obtaining at least one simulated aerial image of the object at least partially based on the contour data and the at least one repair parameter set, and selecting at least one first repair parameter set from the at least one repair parameter set for carrying out the repair at least partially based on the simulated aerial image and at least one predetermined target value.

A field facet mirror for an illumination optic for EUV projection lithography is designed for arrangement in the area of ​​a field plane of the illumination optic. The field facet mirror has a plurality of field facets (25 T ) for the reflective transfer of illumination light (16) from a light source to an object field with a predetermined distribution of illumination light intensity over a field height of the object field. At least some of the field facets are designated as partial field illumination facets (25 T ) executed. These have a partial field illumination facet reflection section (31) for the reflective transfer of the illumination light (16) TF ) as useful illumination light from the light source towards a partial object field section of the object field that is smaller than the object field. Furthermore, the respective partial field illumination facet (25 T) an output-coupling facet reflection section (32) for the reflective transfer of the illumination light (16 AK ) as output illumination light from the light source to at least one output coupling component. The partial field illumination facet reflection section (31) on the one hand and the output coupling facet reflection section (32) on the other hand are fixed components of the respective partial field illumination facet (25). T ) represents. This results in a field facet mirror, which allows for a demanding specification of an illumination intensity distribution over at least one object field coordinate without undesirable side effects.

An optical system (100) for a lithography system (1), comprising at least one optical element (202), at least one actuator / sensor device (202) associated with at least one optical element (202), an interface device (206) which is optically connected (208) to the at least one actuator / sensor device (202) for data transmission and which can be electrically and / or optically connected to a control device (300), wherein the interface device (206) comprises a first microcomponent (212) with a first processor element (214) and an integrated first optical interface element (216), and comprising at least one actuator / sensor device (204), a second micro component (218) with a second processor element (220) and an integrated second optical interface element (222) which is optically connected to the first optical interface element (216).

The invention relates to an optical measuring arrangement (100) for detecting a distance between a first component and a second component by measuring the length of at least one measuring path (101), wherein the measuring path (101) is spanned between at least two facets (102, 103) forming a measuring head, which are directly or indirectly connected or connectable to the first component, and a measuring target (104) arranged in the measuring path (101), which is directly or indirectly connected or connectable to the second component and is configured to deflect a measuring beam (105) back and forth in the measuring path (101) between the facets, wherein the second facet (103) is formed as a reflecting facet (103). The center of curvature of one of the facets (102, 103) of the measuring head is located on the measuring target (104) or at most 20% of the distance between the facet (102, 103) and the measuring target (104). The invention further relates to a projection exposure system, a lithography system, an inspection system and a coordinate measuring machine.

Method for examining a substrate body (108) for a component (102) of a lithography system (1), comprising the steps: a) Generating (S1) at least one marking (112) in an interior (114) of the substrate body (108), b) Emitting (S3) an ultrasound signal (134) and receiving an ultrasound signal (136) reflected at the at least one mark (112), and c) Determine (S4), spatially resolved, one or more parameters (P) of the substrate body (108) based on the received ultrasound signal (136).

An onium salt consisting of a sulfonic acid anion having an aromatic sulfonic acid structure substituted with an aromatic ring-containing hydrocarbyl group and a triarylsulfonium cation containing iodine and fluorine generates an acid with limited diffusion. A chemically amplified positive resist composition comprising the onium salt as an acid generator and a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer is processed by lithography to form a pattern of rectangular profile.

The invention relates to an attachment (25) for an optical element, in particular for an EUV mirror, comprising: a plurality of projections (31) with connecting surfaces (30) for establishing a material-bonded connection, in particular an adhesive bond, with the optical element. In the attachment (25), at least one connecting surface (30), and in particular all connecting surfaces (30), are substantially circular. The invention also relates to an optical element, in particular an EUV mirror, comprising: a base body, and at least one attachment (25) configured as described above, wherein the attachment (25) is connected to the base body at the connecting surfaces (30) via a material-bonded connection, in particular an adhesive bond. The invention also relates to a semiconductor technology system, in particular an EUV lithography system, which has at least one such optical element.

An optical system (200) of a lithography system (1) for condition monitoring of the optical system (200, 300), comprising a first module (202, 210) with a first module control device (204), wherein the first module (202, 210) is monitorable based on at least one first system observable; a second module (206, 210) with a second module control device (208), wherein the second module (206, 210) is monitorable based on at least one second system observable; and a system control unit (216) configured to perform at least one control function for the optical system (200) and / or the lithography system (1) based on a first error code (214), and to receive condition monitoring information (218) from the first and / or second module (202, 206, 210), and to generate a second error code (220) based on the condition monitoring information (218) from the first and / or second module (202, 206, 210), which provides system condition monitoring in comparison to the first error code (214).

The invention provides a calibration method for a zero plane of an FLS mechanism in photoetching machine equipment and the photoetching equipment, and relates to the technical field of photoetching machines. The method comprises the following steps: determining light spot positions collected by a CCD detector when a workpiece table is at different moving heights, and constructing a relation model between the light spot positions and the height of a detected surface based on the moving heights and the light spot positions corresponding to the moving heights, substituting the position of a target light spot corresponding to the central position of the optical axis of the objective lens into the constructed relation model, calculating to obtain the optimal focal plane height, namely the zero plane of the FLS mechanism, calculating to obtain the adjustment height required by the FLS mechanism by using the initial height and the target height of the FLS mechanism, and controlling the FLS mechanism to move along the vertical direction based on the adjustment height, so as to obtain the target focal plane of the FLS mechanism. And zero plane calibration is completed.

The invention relates to a measuring device (100) for measuring a resistance-dependent measurement variable (T) on or within an optical system (10) of a lithography system (1), said measuring device comprising: a current source (106) for generating a measurement current (I); a measurement line branch (114) and a reference line branch (116); a switching unit (118) for selectively connecting the current source, in a reference switching position (120), to the reference line branch, or, in a measurement switching position (122), to the measurement line branch; a connection unit (126) arranged on the measurement line branch for selectively electrically connecting a measuring resistor (104) or at least one calibration component (128, 130); a reference resistor (132) arranged on the reference line branch; a voltage detection unit (136) for detecting a voltage (UR, UM) selectively across the reference line branch or the measurement line branch; and a control unit (112) for determining a parasitic resistance value (RP) of the measuring device based on a reference voltage (UR) detected in the reference switching position (120) and a measurement voltage (UM) detected in the measurement switching position (122), in which one of the at least one calibration component (128, 130) is connected to the connection unit (126).

The invention discloses a photoetching machine multi-light-source cooperative high-precision exposure control system, and relates to the technical field of photoetching machine control. Initial energy parameters of all light sources are obtained, a coupling feature set of energy change and light spot morphology change is constructed, and light intensity errors, phase errors and light spot distortion errors are used as input, so that a multi-light-source cooperative high-precision exposure control system is constructed; respectively generating an inter-light-source time sequence offset matrix and a light source energy compensation matrix, constructing a light source collaborative error model through matrix superposition and eigenvalue decomposition, inputting exposure disturbance obtained by real-time monitoring of a photoetching machine into the error model, and obtaining a primary compensation amount; a final target exposure compensation parameter is obtained by adopting a quadratic optimization algorithm under a constraint condition, and light source energy output, a light path phase and a pulse trigger time sequence are cooperatively adjusted according to the target exposure compensation parameter, so that energy deviation, phase drift and time sequence mismatch can be reduced at the same time, the exposure stability and the pattern forming precision are remarkably improved, and the image forming precision is improved. The method is suitable for high-resolution and multi-light-source photoetching equipment.

The utility model relates to the technical field of photoetching, in particular to a mixed exposure system and photoetching equipment, which comprises a first exposure device, a second exposure device, a third exposure device and a fourth exposure device, electron beams emitted by the electron beam emission source can be projected to a first irradiation area of the vacuum chamber after passing through the electron light path assembly and the scanning system; the second exposure device comprises an optical exposure light source and an optical light path assembly, and light beams emitted by the optical exposure light source can be projected to a second irradiation area of the vacuum chamber after passing through the optical light path assembly; the moving table is arranged in the vacuum chamber and is provided with a sample bearing position; the driving device is in transmission connection with the moving table and can drive the moving table to move so that the sample bearing position can be located in the first irradiation area or the second irradiation area. According to the invention, photoetching tasks with high precision and high efficiency requirements can be considered at the same time.

An onium salt consisting of a sulfonic acid anion having an aromatic sulfonic acid structure substituted with an aromatic ring-containing hydrocarbyl group and a triarylsulfonium cation containing iodine and fluorine generates an acid having a moderate acidity and limited diffusion. A chemically amplified negative resist composition comprising the onium salt as an acid generator and a polymer is processed by lithography to form a pattern with reduced LER or a dot pattern of rectangular profile.

The invention relates to a device (1) for holding an optical element (2), in particular an optical element of a mask inspection system or a lithography system, comprising a mounting point (3) for connection with the optical element (2), a support (4), and a support base (5). The mounting point (3) is connected to the support (4). The support (4) has at least one leg (6) and an ankle joint (7), wherein the ankle joint (7) pivotally connects a lower end (6a) of the leg (6), facing away from the mounting point (3), to the support base (5). According to the invention, the ankle joint (7) has a support joint (7a) and a transverse joint (7b), wherein the support joint (7a) pivotally connects the lower end (6a) of the leg (6) directly to the support base (5).

The invention discloses a micro-nano visual lithography defect self-adaptive repairing method based on multi-modal image fusion, which comprises the following steps: acquiring a multi-modal image of a wafer surface, inputting the multi-modal image into a cascade-feedback type double-branch defect analysis network, fusing feature maps of two extraction networks by adopting a decision-making layer self-adaptive fusion mechanism based on confidence coefficient weighting, and obtaining a micro-nano visual lithography defect self-adaptive repairing result. Generating a fusion defect probability graph; performing defect detection and classification based on the fused defect probability graph, and identifying the type, position and size parameters of the photoetching defect so as to adaptively determine repair parameters; repairing the defect area according to the repairing parameters; and after repairing is completed, the multi-modal image of the defect area is collected again, the similarity of the images before and after repairing is calculated, when the similarity is smaller than a preset threshold value, repairing parameters are determined again till the similarity is larger than or equal to the preset threshold value, and a final repairing image is output. The defect detection precision can be improved, and the repair effect is improved while the repair efficiency is improved.

The embodiment of the invention provides a method and equipment for mask pattern optimization and a storage medium. The method includes generating a respective simulation signal of at least one graphic segment in the mask pattern using at least one photolithographic imaging model respectively corresponding to at least one process condition; constructing a corresponding signal error optimization target for the at least one graphic segment based on a corresponding correction parameter for adjusting the at least one graphic segment and a difference between the corresponding simulation signal and the target signal; and optimizing the corresponding correction parameters based on the corresponding signal error optimization targets. In this way, the performance of mask pattern optimization can be improved.