2233 results about "Lithography" patented technology

The invention relates to the technical field of photoetching machine calibration, and discloses a photoetching machine calibration method, device and equipment based on multi-view vision, and the method comprises the following steps: carrying out imaging and phase sensitive detection analysis on a mask plane and a wafer plane through a four-path optical beam splitting system to obtain four groups of mask-wafer initial alignment position information; performing scanning white light interference edge enhancement processing to obtain three-dimensional surface contour data; performing wavelet transform processing on the three-dimensional surface contour data, and performing dynamic registration on the four-path optical beam splitting system to obtain multi-view visual feature registration data; a comprehensive error model including mechanical errors, optical errors and environmental errors is established, real-time correction and error compensation are carried out on a six-degree-of-freedom motion platform of the photoetching machine, a multi-view vision calibration result of the photoetching machine is obtained, the influence of environmental vibration and thermal drift on calibration precision is effectively eliminated, and the calibration accuracy of the photoetching machine is improved. The optical system is ensured to be always in the optimal imaging state, and the calibration precision is improved.

Monoorgano tin trialkoxide compounds having chemical formula R'SnX3 and containing less than about 5 mol% R'2SnX2are described. R' is an optionally substituted organic substituent having about 1 to about 20 carbon atoms and each X is independently ORf, wherein Rf is a fluorinated organic substituent having about 1 to about 20 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.

The disclosure provides a method and system for mask feature optimization and belongs to the field of computational lithography. The method includes: acquiring a new contour after the edges of the main pattern of a mask are moved inward or outward by a predetermined distance; setting a region inside the new contour as the shadow region when the movement is an inward movement and setting a region outside the new contour as the shadow region when the movement is an outward movement; screening an acquired mask gradient field solved by inverse lithography based on the shadow region to keep only the mask gradient field inside the region; and generating a sub resolution assist / inverse feature of the mask based on the screened mask gradient field.

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

The invention discloses a unified multi-task calculation photoetching modeling and defect detection method assisted by a visual large model, which not only has high-precision modeling capability and defect identification performance, but also remarkably reduces the model deployment cost, and has the advantages of high automation, unified modeling, engineering expandability and the like. Comprising the following steps: constructing an image generation and defect detection dual-task data set; the method comprises the following steps of: constructing a two-stage image generation model fusing process conditions on the basis of a unified Transform architecture, and generating mask and contour images from a layout image; the method comprises the following steps: constructing a DETR-based defect detection model for three types of images of layout, mask and contour, and carrying out DRC, MRC and LRC detection; an end-to-end photoetching large model framework is constructed, and after layout is supported to be input, mask, touch and DRC / MRC / LRC detection results are output at the same time.

Method for compensating liquid-transmitted acoustic disturbances of a liquid-tempered optical component (110) of a lithography system (1), wherein the disturbances of the optical component (110) as a first optical component (110) are compensated by means of a non-liquid-tempered second optical component (112) of the lithography system (1), comprising the steps: a) Receiving (S1) a first and second actual value (y 1 , y 2 ) of a position (P 1 , P 2 ) corresponding to the first and second optical components (110, 112), and b) Rules (S3) of the position (P 2 ) of the second optical component (112) to an adjusted target value (r 2 ) of the position (P 2 ) of the second optical component (112), which is set to an initial target value (r i ) of the position (P 2) of the second optical component (112) and the first actual value (y 1 ) of the position (P 1 ) of the first optical component (110).

The invention relates to the technical field of digital photoetching equipment, in particular to an LDI machine image segmentation and exposure splicing method, which comprises the following steps: carrying out primary segmentation on an original complex graph, and carrying out segmentation again after refinement processing; in the exposure process, periodically collecting a gray histogram of an exposure pattern, aligning the exposure images of adjacent areas to form a continuous exposure image, and dynamically adjusting exposure parameters by a light beam modulator according to the characteristics of each second segmentation area to realize closed-loop control on the exposure quality; all exposed images are spliced through a search algorithm and a multi-frame fusion technology, smooth transition of image edges is realized, discontinuity of local features is effectively avoided, the overall consistency and integrity of the spliced images are ensured, the imaging quality and precision are further improved, finally, the spliced images are verified, and the image quality is improved. And seamless splicing of each segmented region is ensured, so that high-quality graphic output is generated.

The invention relates to a multi-degree-of-freedom motion synchronous measurement system and method based on time-space domain information fusion, which utilize a heterodyne interference phenomenon generated by a double-frequency light source to realize accurate measurement of displacement and angle by analyzing phase change of an interference signal generated by interaction of a measurement grating and a reference grating. The system comprises a double-frequency light source, an optical element, a measuring grating, a reference grating and a photoelectric detector, and the photoelectric detector comprises an array detector and a common photoelectric detector and is used for receiving interference light signals of different diffraction orders. The processing device at least comprises an angle measuring module. The angle module is used for resolving by fusing phase spatial-temporal characteristics and light spot displacement of signals on the array detector; a displacement module can be further included, calculation is carried out through the phase change of heterodyne interference signals on the detector along with time, and finally synchronous measurement of six-degree-of-freedom motion parameters can be achieved. The system has the advantages of being accurate, compact in size, high in light source efficiency and the like, and is suitable for multiple fields of photoetching machine wafer table positioning, ultra-precision machine tool machining and the like.

The invention discloses a construction method, device and equipment of a dual etching model, a medium and a product, and relates to the technical field of semiconductor manufacturing. The method comprises the following steps: acquiring a light intensity distribution image set; pairing any two light intensity distribution images in the light intensity distribution image set to obtain a plurality of image pairs; for each image pair, respectively inputting the first light intensity distribution image and the second light intensity distribution image in the image pair into a photoetching process model to obtain a first photoresist image and a first etching image as well as a second photoresist image and a second etching image; for each image pair, fusing the first etching image and the second etching image to obtain a target etching label image; and for each image pair, taking the first photoresist image and the second photoresist image as independent variables, taking the target etching label image as a dependent variable, and training the target machine learning model to obtain a dual etching model. According to the invention, the accuracy of the dual etching model can be improved.

The invention discloses an automatic generation method for a standard cell layout with a switchable power consumption area, and relates to an LELE (Lithography-Etching-Lithography-Etching) technology, which is used for carrying out data preprocessing on a circuit netlist; respectively performing source-drain sharing operation on NMOS (N-channel Metal Oxide Semiconductor) tubes and PMOS (P-channel Metal Oxide Semiconductor) tubes in the preprocessed circuit netlist to obtain a layout with an optimal area; performing gate pairing operation on NMOS (N-channel Metal Oxide Semiconductor) transistors and PMOS (P-channel Metal Oxide Semiconductor) transistors in the preprocessed circuit netlist to form MOS (Metal Oxide Semiconductor) transistor pairs, and performing source-drain sharing operation on the MOS transistor pairs to obtain a layout with optimal power consumption; grid modeling is carried out based on design rule parameters of the process library, and a grid point canvas is established; and adding the layout with the optimal area and the layout with the optimal power consumption into the lattice point canvas, and simulating manual wiring through an A star algorithm to obtain a layout with the optimal index. According to two independent layout strategies, the grid layout is created in combination with a process design rule, and manual wiring is simulated by using an algorithm, so that the feasibility of the whole process of layout and wiring is realized.

The invention discloses high-temperature photoetching silver paste suitable for narrow line width and line spacing, which is prepared from the following components in parts by weight: 20-40 parts of photosensitive resin, 20-40 parts of ethoxylated 1, 2, 4-trimethyl-1, 3-pentanediol monoisobutyrate, 20-30 parts of a solvent and 1- The invention relates to a photocurable conductive coating which is prepared from the following components in parts by weight: 10 to 30 parts of 1, 6-hexanediol diacrylate, 5 to 15 parts of a photoinitiator, 0.5 to 1 part of an antioxidant, 0.5 to 1 part of 2-hydroxy-4-n-octyloxybenzophenone, 0.5 to 1.5 parts of a defoaming agent, 0.5 to 1.5 parts of a flatting agent, 0.5 to 1.5 parts of a dispersing agent, 5 to 20 parts of an organic solvent, 60 to 85 parts of conductive filler and 0.5 to 5 parts of glass powder. The selected photosensitive resin is formed by mixing alkali-soluble epoxy acrylic resin and alkali-soluble polyurethane acrylic resin according to the weight part ratio of 10: (2-6). According to the high-temperature photoetching silver paste suitable for the narrow line width and line distance, the five steps of printing, baking, photoetching, developing and sintering are achieved, patterns which cannot be manufactured in a traditional printing mode can be manufactured, and a high-density circuit with the line width and the line distance reaching 20 micrometers / 20 micrometers can be manufactured.

The invention provides a polybenzyl chloride type monomolecular resin photoresist based on an adamantane structure as well as a preparation method and application of the polybenzyl chloride type monomolecular resin photoresist. According to the invention, the advantages of non-chemically amplified photoresist and monomolecular resin are combined, and a series of monomolecular resin based on adamantane core and periphery grafted benzyl chloride groups are synthesized. The series of compounds are simple in synthesis process, have very high thermal stability and good film-forming property, and can meet the requirements of a photoresist process. Electron beam and extreme ultraviolet lithography show that the series of photoresist materials are expected to meet the requirement of high-resolution lithography.

The invention belongs to the field of computational lithography, and particularly discloses a lithography model calibration method based on a proxy model assisted hybrid genetic algorithm, which comprises the following steps: determining to-be-optimized parameters of a lithography model, and generating an initial population according to the to-be-optimized parameters; performing parallel simulation on the current population to obtain a photoetching model simulation result of the current population; performing parallel evaluation on the current population to obtain photoetching model evaluation indexes and fitness distribution of the current population; screening excellent individuals in the current population to construct an agent model, and performing optimal prediction to obtain a first type of individuals; screening excellent individuals in the current population and carrying out crossover and variation to obtain a second type of individuals; and combining the first type of individuals and the second type of individuals, carrying out parallel simulation and evaluation on the next-generation population, and carrying out loop iteration updating until a preset termination condition is met, so as to obtain a photoetching model parameter set of the optimal individual. According to the invention, the calibration process of the photoetching model can be simplified, and the automation, precision efficiency and global search capability are improved.

A method for correcting a final imprint force FIF in an imprint process is provided. Position traces of an imprint head exercising along a predetermined trajectory are obtained. A force disturbance model is established based on prior position and force traces of the imprint head. A disturbance force Fmod,FIF,i is using a predetermined motion sequence based on the force disturbance model for wafer i, where i=1 to n. A residual force offset (RFO) measurement is performed to determine an actual force Fact,RFO,i applied to wafer i. A disturbance force Fmod,FIF,i,j applied to a field j of the wafer i is calculated using the force disturbance model, where j=1 to m. An adjustment is applied to the RFO measurement. An imprint force is applied to a film on the wafer i with the imprint head based on an output of the adjustment applied to Fact,RFO,i and a desired force to be applied to the film on the wafer.

The invention discloses a preparation and coupling optimization method of a strip-shaped SOI waveguide adopting end face coupling, and belongs to the field of micro-nano fine structure processing and optical precision measurement. According to the method, through two-step photoetching and two-step etching, on one hand, the substrate section highly coincident with the waveguide end face can be etched on the waveguide end face, and on the other hand, it can be guaranteed that the etching broadening of the Si substrate etching channel cannot cause the hollow-out of the lower portion of the waveguide above SiO2. By using the direct-current magnetron sputtering Cr mask, the waveguide material can be prevented from being etched and damaged in the deep silicon etching process. Through the ion beam etching process, the end face of the waveguide and the etched side wall of the substrate are completely overlapped, so that part of light spots are prevented from being scattered by the Si substrate in the optical fiber coupling process, and the coupling efficiency of the waveguide is further improved. By combining the FDTD simulation result, the low-internal stress SiO2-Si3N4 antireflection film with the proper thickness is deposited on the waveguide end face through ICP-PECVD, light spots are prevented from being reflected on the waveguide end face, and the light spot coupling efficiency reaches the maximum.

The invention discloses an isomorphic four-core hollow-core anti-resonance optical fiber for an ultraviolet band photoetching process, which belongs to the technical field of optical fiber communication, and comprises an outer cladding and four isomorphic hollow-core light guide units which are arranged in the outer cladding and are distributed at equal intervals in a rectangular array manner, anti-resonance structures are symmetrically arranged in each isomorphic hollow-core light guide unit in the vertical direction and the horizontal direction, and the anti-resonance structures enclose to form an air fiber core; the anti-resonance structure is formed by nesting a plurality of layers of circular and elliptical anti-resonance tubes. And the four isomorphic hollow-core light guide units respectively work in the wavelength ranges of 280 to 380 nm, 220 to 280 nm, 160 to 220 nm and 100 to 160 nm. The isomorphic four-core hollow-core anti-resonance optical fiber structure provided by the invention has a multi-channel transmission capability, and is suitable for multi-beam parallel transmission in a high-resolution ultraviolet lithography system.

An image sensor with one or more imaging sensor layers and / or one or more color filter layers is provided. Imaging sensor layers sense different combinations of wavelengths of light depending in part on filtered light passing through the color filter layers. The color filter layers, which can be tunable filters, plasmonic color filters or dielectric subwavelength grating filters, allow certain colors of light to pass through to the imaging sensor layers and block others. The image sensor is connected to control circuitry that measures the properties of light received at each imaging sensor layer, reconstructs the color components of each pixel of the imaging sensor layers based on these measurements, and generates full-color image data from the color components. Methods of manufacturing the image sensor are also provided using lithography and securing the layers in a sensor stack using a bonding substrate.

The utility model relates to a photoetching lens and a photoetching machine, which comprise a first lens group and a first reflecting mirror which are sequentially arranged along the direction of a first optical axis, and a second reflecting mirror, a second lens group and a third lens group which are sequentially arranged along the direction of a second optical axis, and after being reflected by the first reflecting mirror to pass through the second lens group in the forward direction, the light is reflected by the second reflecting mirror to pass through the second lens group in the reverse direction, and then passes through the third lens group to converge to an imaging surface. The structure of the photoetching lens has excellent imaging performance, a larger view field can be realized, and large-area photoetching pattern processing can be directly realized, so that the problem that the view field of the existing photoetching lens is small is solved; besides, a reflective structure is adopted, so that the light beam passes through the second lens group twice in the forward and reverse directions, the number of lenses is reduced by half while the transmission distance of the light beam is ensured, and therefore, the volume of the photoetching lens is effectively reduced, and the cost of the photoetching lens is reduced.

An image sensor with one or more imaging sensor layers and / or one or more color filter layers is provided. Imaging sensor layers sense different combinations of wavelengths of light depending in part on filtered light passing through the color filter layers. The color filter layers, which can be tunable filters, plasmonic color filters or dielectric subwavelength grating filters, allow certain colors of light to pass through to the imaging sensor layers and block others. The image sensor is connected to control circuitry that measures the properties of light received at each imaging sensor layer, reconstructs the color components of each pixel of the imaging sensor layers based on these measurements, and generates full-color image data from the color components. Methods of manufacturing the image sensor are also provided using lithography and securing the layers in a sensor stack using a bonding substrate.

The invention relates to an optical waveguide coupler based on a hard substrate and a preparation method thereof, and belongs to the technical field of couplers. The method comprises the following steps: preparing a lower rectangular waveguide core layer on a hard substrate through an ultraviolet lithography technology; preparing a lower reflecting micro-mirror through an excimer laser technology, and plating a reflecting film on the surface of the lower reflecting micro-mirror; then preparing an upper rectangular waveguide core layer through an ultraviolet lithography technology on the basis; preparing an upper reflecting micro-mirror at a corresponding vertical position of the lower reflecting micro-mirror through an excimer laser technology, and plating a reflecting film on the surface of the upper reflecting micro-mirror; the optical waveguide coupler prepared by the method realizes high-density interlayer interconnection, and is relatively high in application flexibility and high in interlayer coupling efficiency.

According to the embodiment of the invention, the invention provides a photoetching signal simulation method, photoetching signal simulation equipment and a storage medium. The method comprises the following steps: determining an analog optical signal for a substrate with at least one protruding structure, wherein the analog optical signal indicates a signal formed on the substrate after light passes through a mask; determining a topology signal for the substrate, the topology signal being associated with the at least one protruding structure; and determining a lithography signal for the substrate based on the analog light signal and the topology signal. Therefore, the influence of the stacking of the at least one protruding structure and the photoresist on the signal on the substrate can be considered, and the accuracy of the photoetching signal can be improved.

An imaging optic (10) for projection lithography serves to image an object field (5), in which a reticulum to be imaged can be arranged, onto an image field (11), in which a substrate to be exposed can be arranged. The imaging optic (10) has a plurality of mirrors (M1 to M8) for guiding imaging light (16) along an imaging beam path from the object field (5) to the image field (11). The image-side numerical aperture of the imaging optic (10) is greater than 0.75. The optical conductivity of the imaging optic (10) is greater than 45 mm. 2 The result is an imaging optic whose usability for a projection exposure system is improved.

The invention relates to the technical field of semiconductor manufacturing, photoetching alignment and feature recognition, and particularly discloses a photoetching alignment compensation system and method based on feature targeting. An exposed pattern on the surface of a wafer is used as a unique target reference, a built-in visual imaging structure coaxial with a photoetching light path is adopted, a sub-pixel-level feature extraction and dynamic reference real-time updating mechanism is combined, the dynamic deformation of the wafer is calculated, high-frequency compensation of a workpiece table is achieved, and nanoscale overlay precision is achieved. The core improvement of the invention lies in that a light path coaxial visual integrated structure is designed to solve the problem of external imaging parallax; a feature point self-adaptive weighted matching algorithm is provided, and the deformation compensation precision is improved; and constructing a reference map real-time micro-updating mechanism, and eliminating progressive deformation drift of the wafer. The system does not need to manufacture a special physical alignment mark, continuously verify a feature matching state in the whole exposure process and quickly trigger safety protection when the matching degree is abnormal, is suitable for a photoetching alignment process for manufacturing advanced process chips of 3nm and below, has an alignment error of less than or equal to 1.1 nm under a 12-inch wafer standard test condition, reduces the dependence on an ultra-precise workpiece table, and has a good application prospect. The system has the advantages of autonomous controllability, high interference resistance and controllable cost.

A method that including performance of source mask optimization (SMO) for a plurality of laser spectra. The method further includes generation of training data by determining, for each optimized source-mask-combination, performance metrics such as EPE, CDU, LER, LWR, DOF, NILS for the plurality of laser spectra and training of a machine learning (ML) model to determine an optimal laser spectrum based on the generated training data. The method may further including predicting optimal spectra for production design layouts using the trained ML model.

It is described a process for producing transparent ceramic bodies with at least two zones having different garnet composition, in particular in which one of said zones has composition Y3AI5O12. The invention is especially useful for the production of transparent ceramic bodies having preset complex shapes and / or a controlled complex distribution of doping ions.

Mounting device (100) for a lithography system (1), comprising a first and a second component (102, 104), at least one vibration damping device (106) with at least one damping element (108) with which the second component (104) is attached to the first component (102) in a vibration-damping manner, and at least one flexible enclosure (112) by means of which the at least one damping element (108) is enclosed in a fluid-tight manner.

The invention belongs to the field of semiconductor processes and devices, and particularly relates to a method for preventing photoresist denaturation in the process of etching graphene by oxygen plasma based on an isolating layer. The method comprises the following steps: transferring graphene to a substrate through a mechanical stripping and transferring technology; exposing the two ends of the graphene in the environment through photoetching, and evaporating Se serving as an isolating layer onto the developed graphene pattern; covering photoresist to protect Se from being influenced by subsequent etching, and performing photoetching to form a graphene channel; processing the graphene substrate covered by the photoresist by adopting oxygen plasma, and etching a graphene channel; and annealing to remove Se. The method is suitable for manufacturing semiconductor devices, and has wide application prospects in the fields of micromachining, patterning and functionalization treatment of graphene-based materials. The method can be used for preparation processes of graphene integrated circuits, graphene sensors, photoelectric devices and other microelectronic devices, and especially has a promotion effect on high-precision graphene processing.

A control device (100) for controlling at least one actuator (200) for actuating an optical element (310) of an optical system (300), comprising an amplifier (110) which is configured to receive a provided supply voltage (V1) at an input node (K1) and to provide a control voltage (V2) for the actuator (200) at an output node (K2), wherein the amplifier (110) has a resistive voltage divider (R1, R2) for adjusting the gain of the amplifier (110) with a first resistor (R1) and a second resistor (R2) and a capacitive voltage divider (C1, C2) with a first capacitor (C1) and a second capacitor (C2), wherein the capacitive voltage divider (C1, C2) is connected in parallel to the resistive voltage divider (R1, R2).

Coated nanotubes and bundles of nanotubes are formed into membranes useful in optical assemblies in EUV photolithography systems. These optical assemblies are useful in methods for patterning materials on a semiconductor substrate. Such methods involve generating, in a UV lithography system, UV radiation. The UV radiation is passed through a coating layer of the optical assembly, e.g., a pellicle assembly. The UV radiation that has passed through the coating layer is passed through a matrix of individual nanotubes or matrix of nanotube bundles. UV radiation that passes through the matrix of individual nanotubes or matrix of nanotube bundles is reflected from a mask and received at a semiconductor substrate.

The invention provides a manufacturing method of a type-II superlattice medium-wave infrared focal plane array chip and an infrared detector, and belongs to the field of infrared focal plane array chips. The problem that in the prior art, the surface leakage current of an infrared focal plane array chip is large due to the fact that the mesa etching depth is large is solved. The method comprises the following steps: growing and cleaning an epitaxial material; hard mask deposition, mesa photoetching and etching: obtaining a required mesa pattern on the hard mask through a photoetching technology, then etching an epitaxial material, etching the epitaxial material to form the mesa pattern, the mesa pattern comprising an upper electrode region and a lower electrode region, etching the upper electrode region to the boundary of the barrier layer and the absorption region, and etching the lower electrode region to the boundary of the barrier layer and the absorption region; etching a lower electrode region to the lower ohmic contact layer; manufacturing a metal electrode; a connecting piece is manufactured on the metal electrode to be connected with a reading circuit, and manufacturing of the infrared focal plane array chip is completed; the invention is applied to the II-type superlattice medium-wave infrared detector.