3116 results about "Lithography" patented technology

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

The invention relates to the technical field of photoetching machine calibration, and discloses a photoetching machine calibration method, device and equipment based on multi-view vision, and the method comprises the following steps: carrying out imaging and phase sensitive detection analysis on a mask plane and a wafer plane through a four-path optical beam splitting system to obtain four groups of mask-wafer initial alignment position information; performing scanning white light interference edge enhancement processing to obtain three-dimensional surface contour data; performing wavelet transform processing on the three-dimensional surface contour data, and performing dynamic registration on the four-path optical beam splitting system to obtain multi-view visual feature registration data; a comprehensive error model including mechanical errors, optical errors and environmental errors is established, real-time correction and error compensation are carried out on a six-degree-of-freedom motion platform of the photoetching machine, a multi-view vision calibration result of the photoetching machine is obtained, the influence of environmental vibration and thermal drift on calibration precision is effectively eliminated, and the calibration accuracy of the photoetching machine is improved. The optical system is ensured to be always in the optimal imaging state, and the calibration precision is improved.

Some embodiments provide an iterative method for optimizing a mask layout for producing masks that are used for manufacturing an IC including multiple layers. Each iteration, the method generates a simulated wafer image including predicted manufactured shapes representing components for a layer based on a mask layout. Each iteration, the method compares the simulated wafer image to a target wafer image for the layer to determine whether the predicted manufactured shapes match corresponding shapes in the target wafer image. Each iteration, the method performs an inverse lithography operation to adjust mask shapes of the mask layout based on the comparison. The inverse lithography operation explores different mask layouts and is biased to select mask shapes that ensure that critical regions of the predicted manufactured shapes more perfectly match the corresponding target shapes at expense of less important regions of the predicted manufactured shapes failing to match the corresponding target shapes.

The invention is directed to methods and systems for producing a surface coated with a plurality of spatial barcodes. In one aspect, beads carrying barcode oligonucleotides are disposed on a surface after which hydrogel chambers are synthesized around each bead and barcode oligonucleotides are released to be captured on the surface in the interiors of the chambers. Captured oligonucleotide barcodes are amplified and optionally sequenced to form a coating of spatial barcodes.

Monoorgano tin trialkoxide compounds having chemical formula R'SnX3 and containing less than about 5 mol% R'2SnX2are described. R' is an optionally substituted organic substituent having about 1 to about 20 carbon atoms and each X is independently ORf, wherein Rf is a fluorinated organic substituent having about 1 to about 20 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.

Autoencoder models may be used in the field of lithography to estimate, infer or predict a parameter of interest (e.g., metrology metrics). An autoencoder model is trained to predict a parameter by training it with measurement data (e.g., pupil images) of a substrate obtained from a measurement tool (e.g., optical metrology tool). Disclosed are methods and systems for synchronizing two or more autoencoder models for in-device metrology. Synchronizing two autoencoder models may configure the encoders of both autoencoder models to map from different signal spaces (e.g., measurement data obtained from different machines) to the same latent space, and the decoders to map from the same latent space to each autoencoder's respective signal space. Synchronizing may be performed for various purposes, including matching a measurement performance of one tool with another tool, and configuring a model to adapt to measurement process changes (e.g., changes in characteristics of the tool) over time.

The disclosure provides a method and system for mask feature optimization and belongs to the field of computational lithography. The method includes: acquiring a new contour after the edges of the main pattern of a mask are moved inward or outward by a predetermined distance; setting a region inside the new contour as the shadow region when the movement is an inward movement and setting a region outside the new contour as the shadow region when the movement is an outward movement; screening an acquired mask gradient field solved by inverse lithography based on the shadow region to keep only the mask gradient field inside the region; and generating a sub resolution assist / inverse feature of the mask based on the screened mask gradient field.

Monoorgano tin compounds having chemical formula R′SnX3 and high purity are described. R′ is an optionally substituted hydrocarbyl group, X is selected from NR2 and OR, and each R is independently a linear or branched alkyl group having about 1 to about 10 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.

A device for the lithography-based additive manufacturing of three-dimensional structures on a substrate, comprises a carrier element for carrying a substrate having a curved surface, a light engine designed for the dynamic patterning of light in an exposure field of said light engine, a material transport unit comprising a first drive means for transporting a material layer across the exposure field, second drive means for causing rotational movement of the substrate having the curved surface such as to establish a rolling contact of the curved surface on the material layer in a contact zone, said contact zone being arranged in the exposure field, and first control means configured to control said first and / or second drive means so that said rolling contact of the curved surface on the material layer is essentially slip-free.

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

A silicon-containing resist underlayer film forming composition for forming a resist underlayer film which is able to be removed not only by a conventional dry etching method but also by a wet etching method that uses a chemical agent, and which has excellent lithography characteristics, while enabling the achievement of a high etching rate during wet etching. A silicon-containing resist underlayer film forming composition which contains (A) a polysiloxane, (B) nitric acid, (C) a bisphenol compound and (D) a solvent.

The invention relates to the field of integrated circuit manufacturing, in particular to a layout pattern matching method, device and equipment and a storage medium. According to a preset geometric feature matching condition, searching and matching the target pattern in the to-be-matched layout to obtain a geometric matching pattern; obtaining a corresponding target airspace image and a matched airspace image; obtaining a matching frequency domain image corresponding to each geometric matching pattern and a target frequency domain image corresponding to the target pattern; respectively calculating a difference value between each matching frequency domain image and the target frequency domain image; judging whether the diffraction information difference value of each geometric matching pattern exceeds a preset first threshold value or not; and determining the geometric matching pattern of which the diffraction information difference value does not exceed the first threshold value as the photoetching matching pattern. According to the method, the geometric matching pattern is matched in the aspect of photoetching imaging characteristics, the pattern matching precision and matching accuracy are improved, and the practicability is improved.

The present disclosure provides a method, apparatus, medium and device for calculating the wafer layout of a wafer, belonging to the field of semiconductor technology. The method includes: based on the distribution array of each wafer, taking any wafer as a reference wafer, moving the wafer center in a preset area according to a first step length to determine the first coverage area after each movement, and determining the feasible area of the reference wafer according to the number of complete wafers in the coverage area; moving the wafer center in the feasible area according to a second step length to determine the second coverage area after each movement, and determining the maximum number of complete wafers in the coverage area; placing the reference wafer at different positions in the single-exposure area in turn according to the wafer position distribution pattern of the single-exposure area of the lithography machine to determine the minimum number of exposures for exposing all wafers; determining the positions of each wafer according to the maximum number and the minimum number of exposures to generate a wafer layout. The present disclosure can improve the accuracy and efficiency of calculating the maximum number of wafers.

An illumination optic (11) for projection lithography has a transmission facet mirror (6), an illumination specification facet mirror (7), and a monitoring device (28). The latter has at least one spatially resolving monitoring sensor (29) and a satellite facet (30), which belongs to the transmission facet mirror (6) and is each assigned to exactly one monitoring transmission facet (21). The satellite facet (30) is oriented such that monitoring light (3) from a monitoring light source (2) is guided via the satellite facet (30) and a monitoring illumination control facet (25), which is assigned to the monitoring transmission facet (219) via an illumination channel (27), along a monitoring light channel (31) to the monitoring sensor (29). This results in an illumination optic in which a tilting of illumination control facets of an illumination control facet mirror can be effectively monitored.

The invention discloses a unified multi-task calculation photoetching modeling and defect detection method assisted by a visual large model, which not only has high-precision modeling capability and defect identification performance, but also remarkably reduces the model deployment cost, and has the advantages of high automation, unified modeling, engineering expandability and the like. Comprising the following steps: constructing an image generation and defect detection dual-task data set; the method comprises the following steps of: constructing a two-stage image generation model fusing process conditions on the basis of a unified Transform architecture, and generating mask and contour images from a layout image; the method comprises the following steps: constructing a DETR-based defect detection model for three types of images of layout, mask and contour, and carrying out DRC, MRC and LRC detection; an end-to-end photoetching large model framework is constructed, and after layout is supported to be input, mask, touch and DRC / MRC / LRC detection results are output at the same time.

Method for compensating liquid-transmitted acoustic disturbances of a liquid-tempered optical component (110) of a lithography system (1), wherein the disturbances of the optical component (110) as a first optical component (110) are compensated by means of a non-liquid-tempered second optical component (112) of the lithography system (1), comprising the steps: a) Receiving (S1) a first and second actual value (y 1 , y 2 ) of a position (P 1 , P 2 ) corresponding to the first and second optical components (110, 112), and b) Rules (S3) of the position (P 2 ) of the second optical component (112) to an adjusted target value (r 2 ) of the position (P 2 ) of the second optical component (112), which is set to an initial target value (r i ) of the position (P 2) of the second optical component (112) and the first actual value (y 1 ) of the position (P 1 ) of the first optical component (110).

The invention relates to the technical field of digital photoetching equipment, in particular to an LDI machine image segmentation and exposure splicing method, which comprises the following steps: carrying out primary segmentation on an original complex graph, and carrying out segmentation again after refinement processing; in the exposure process, periodically collecting a gray histogram of an exposure pattern, aligning the exposure images of adjacent areas to form a continuous exposure image, and dynamically adjusting exposure parameters by a light beam modulator according to the characteristics of each second segmentation area to realize closed-loop control on the exposure quality; all exposed images are spliced through a search algorithm and a multi-frame fusion technology, smooth transition of image edges is realized, discontinuity of local features is effectively avoided, the overall consistency and integrity of the spliced images are ensured, the imaging quality and precision are further improved, finally, the spliced images are verified, and the image quality is improved. And seamless splicing of each segmented region is ensured, so that high-quality graphic output is generated.

The invention relates to a multi-degree-of-freedom motion synchronous measurement system and method based on time-space domain information fusion, which utilize a heterodyne interference phenomenon generated by a double-frequency light source to realize accurate measurement of displacement and angle by analyzing phase change of an interference signal generated by interaction of a measurement grating and a reference grating. The system comprises a double-frequency light source, an optical element, a measuring grating, a reference grating and a photoelectric detector, and the photoelectric detector comprises an array detector and a common photoelectric detector and is used for receiving interference light signals of different diffraction orders. The processing device at least comprises an angle measuring module. The angle module is used for resolving by fusing phase spatial-temporal characteristics and light spot displacement of signals on the array detector; a displacement module can be further included, calculation is carried out through the phase change of heterodyne interference signals on the detector along with time, and finally synchronous measurement of six-degree-of-freedom motion parameters can be achieved. The system has the advantages of being accurate, compact in size, high in light source efficiency and the like, and is suitable for multiple fields of photoetching machine wafer table positioning, ultra-precision machine tool machining and the like.

The invention relates to a projection exposure system (1,101) for semiconductor lithography with at least one component (M3) having a fluid channel (31) and a device (41) for providing a fluid (90) for flowing through the fluid channel (31), wherein the fluid channel (31) is connected to the device (41) by a supply line (45) and a discharge line (49) and is characterized in that the supply line (45) and the discharge line (49) are connected to each other in parallel to the fluid channel (31) via an acoustic short circuit (38, 69).

A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.

The invention discloses a construction method, device and equipment of a dual etching model, a medium and a product, and relates to the technical field of semiconductor manufacturing. The method comprises the following steps: acquiring a light intensity distribution image set; pairing any two light intensity distribution images in the light intensity distribution image set to obtain a plurality of image pairs; for each image pair, respectively inputting the first light intensity distribution image and the second light intensity distribution image in the image pair into a photoetching process model to obtain a first photoresist image and a first etching image as well as a second photoresist image and a second etching image; for each image pair, fusing the first etching image and the second etching image to obtain a target etching label image; and for each image pair, taking the first photoresist image and the second photoresist image as independent variables, taking the target etching label image as a dependent variable, and training the target machine learning model to obtain a dual etching model. According to the invention, the accuracy of the dual etching model can be improved.

The invention discloses an automatic generation method for a standard cell layout with a switchable power consumption area, and relates to an LELE (Lithography-Etching-Lithography-Etching) technology, which is used for carrying out data preprocessing on a circuit netlist; respectively performing source-drain sharing operation on NMOS (N-channel Metal Oxide Semiconductor) tubes and PMOS (P-channel Metal Oxide Semiconductor) tubes in the preprocessed circuit netlist to obtain a layout with an optimal area; performing gate pairing operation on NMOS (N-channel Metal Oxide Semiconductor) transistors and PMOS (P-channel Metal Oxide Semiconductor) transistors in the preprocessed circuit netlist to form MOS (Metal Oxide Semiconductor) transistor pairs, and performing source-drain sharing operation on the MOS transistor pairs to obtain a layout with optimal power consumption; grid modeling is carried out based on design rule parameters of the process library, and a grid point canvas is established; and adding the layout with the optimal area and the layout with the optimal power consumption into the lattice point canvas, and simulating manual wiring through an A star algorithm to obtain a layout with the optimal index. According to two independent layout strategies, the grid layout is created in combination with a process design rule, and manual wiring is simulated by using an algorithm, so that the feasibility of the whole process of layout and wiring is realized.

Some embodiments of this disclosure can improve measurement of target mark asymmetry in metrology apparatuses for improving accuracy in measurements performed in conjunction with lithographic processes. For example, a metrology system can include a projection system configured to receive a plurality of diffraction orders diffracted from a target on a substrate. The metrology system can further include a detector array and a waveguide device configured to transmit the plurality of diffraction orders between the projection system and the detector array. The detector array can be configured to detect each of the plurality of diffraction orders spatially separate from other ones of the plurality of diffraction orders.

Disclosed is a method for aligning two components (31, 33) of a projection exposure apparatus (1, 101) for semiconductor lithography, comprising:inserting at least one mandrel (30, 50) of a first component (33) into a recess (94) in a second component (31) in the z-direction,preloading the mandrel (30, 50) perpendicular to the z-direction to a predetermined torque for pre-positioning the two components (31,33) in relation to each other in the x-y plane,positioning the two components (31, 33) in the z-direction until they are in contact with a contact force FA,bracing the mandrel (30, 50) with the recess (94) with maximum torque,positioning the two components in the z-direction until the first component (31) rests on the second component (33) with maximum weight force Fmax.Also disclosed is device for aligning the two components (31, 33) comprises the mandrel.

Methods and devices to build and use multi-functional scattering structures. The disclosed methods and devices account for multiple target functions and can be implemented using fabrication methods based on two-photon polymerization or multi-layer lithography. Exemplary devices functioning as wave splitters are also described. Results confirming the performance and benefits of the disclosed teachings are also described.

The invention discloses a butt-joint epitaxial growth ridge waveguide laser chip and a manufacturing method thereof, and belongs to the technical field of lasers, and the manufacturing method comprises the following steps: manufacturing a ridge waveguide structure on an epitaxial wafer subjected to butt-joint growth, coating a layer of photoresist adhesive and two layers of photoresist on the ridge waveguide structure, forming a window at a convex ridge of the overlay ridge waveguide structure, and forming the butt-joint epitaxial growth ridge waveguide laser chip. The window covers an area above the passive area and a part of the active area, exposing and developing the epitaxial wafer in the window, removing a part of photoresist, etching and removing the residual photoresist in the window to expose the ohmic contact layer, corroding and removing the ohmic contact layer in the window, and removing all the photoresist on the surface of the epitaxial wafer. The length of the ohmic contact layer is controlled through double-layer adhesive photoetching and wet etching, and the ohmic contact layer above the active region is further etched, so that diffusion of current to the passive waveguide direction is effectively inhibited, the threshold current of the chip is reduced, the heating value of the passive waveguide region is reduced, and the reliability of the chip is improved.

Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

The invention discloses high-temperature photoetching silver paste suitable for narrow line width and line spacing, which is prepared from the following components in parts by weight: 20-40 parts of photosensitive resin, 20-40 parts of ethoxylated 1, 2, 4-trimethyl-1, 3-pentanediol monoisobutyrate, 20-30 parts of a solvent and 1- The invention relates to a photocurable conductive coating which is prepared from the following components in parts by weight: 10 to 30 parts of 1, 6-hexanediol diacrylate, 5 to 15 parts of a photoinitiator, 0.5 to 1 part of an antioxidant, 0.5 to 1 part of 2-hydroxy-4-n-octyloxybenzophenone, 0.5 to 1.5 parts of a defoaming agent, 0.5 to 1.5 parts of a flatting agent, 0.5 to 1.5 parts of a dispersing agent, 5 to 20 parts of an organic solvent, 60 to 85 parts of conductive filler and 0.5 to 5 parts of glass powder. The selected photosensitive resin is formed by mixing alkali-soluble epoxy acrylic resin and alkali-soluble polyurethane acrylic resin according to the weight part ratio of 10: (2-6). According to the high-temperature photoetching silver paste suitable for the narrow line width and line distance, the five steps of printing, baking, photoetching, developing and sintering are achieved, patterns which cannot be manufactured in a traditional printing mode can be manufactured, and a high-density circuit with the line width and the line distance reaching 20 micrometers / 20 micrometers can be manufactured.

The present invention provides a method and system 100 for classifying defects in a wafer using wafer defect images based on a deep learning network. Embodiments herein use the synergy between multiple modalities of wafer defect images to make classification decisions. Additionally, by adding a mixture of modalities, information can be obtained from different sources, such as color images, ICI, black and white images, etc., to classify defect images. In addition to the mixed modalities, reference images can be used for each modality. The reference image of each modality image is provided to the deep learning model to focus on the defect itself rather than the underlying lithography associated with the defect image. Further, the reference image can be provided to the training process of the deep learning model, which can significantly reduce the number of labeled images and the training time for the deep learning model to converge.

The invention relates to a method for manufacturing a low-wavefront-error double-blazed grating for electron beam gray lithography, which comprises the following steps of: decomposing dose parameters of an electron beam into average dose and dose difference, decomposing grating parameters into grating height and grating depth, and constructing a mathematical model between the average dose and the dose difference; through differential calculation and least square fitting, the relation between the dose parameter and the height and depth of the grating is optimized, and then high-precision manufacturing of the target grating is achieved. The method comprises the following specific steps: firstly, decomposing dose and grating parameters, and establishing a first mathematical model among grating height, depth and dose parameters; and then obtaining relational data through an experiment, performing optimization calculation by using the second mathematical model, and finally obtaining a dose parameter corresponding to the target grating. And finally, manufacturing the double-blazed grating with the low wavefront error according to the target parameters. According to the method, wavefront errors can be effectively reduced, the photoetching precision is improved, and the method has relatively good manufacturing consistency and is suitable for the production requirements of high-precision gratings.