1405 results about "Photomask" patented technology

The invention discloses a manufacturing method of a groove, a semiconductor device and a manufacturing method of the semiconductor device, and relates to the technical field of semiconductors, and the manufacturing method comprises the steps: providing a substrate, forming a first mask layer on the substrate, and etching the first mask layer by taking a photomask as a mask, so that the first mask layer covers the substrate of a first groove region, forming a second mask layer on the substrate, etching the second mask layer to enable the second mask layer to expose the first mask layer and the substrate in the second groove region, etching the substrate in the second groove region by taking the first mask layer and the second mask layer as masks to form a relatively shallow second groove, and etching the first mask layer to form a relatively shallow second groove; according to the method, the substrate of the first trench region and the substrate of the second trench region are exposed by the second mask layer, and the substrate of the first trench region and the substrate of the second trench region are etched by taking the second mask layer as a mask to form a deeper second trench and a shallower first trench, so that a shallow trench and a deep trench can be manufactured by adopting one photomask, and the manufacturing cost can be further reduced.

The invention provides an optical proximity effect correction method and system, a terminal and a medium, and the method comprises the steps: obtaining a plurality of initial parameter combinations of a photoetching mask design pattern, so as to form an initial population; wherein each initial individual in the initial population corresponds to a group of initial parameter combinations; determining a plurality of optimization indexes of the photoetching mask design graph, and determining an optical proximity effect correction function based on the plurality of optimization indexes and constraint conditions; and based on the optical proximity effect correction function, obtaining an optimal parameter combination of the photoetching mask design pattern in the iteration process of the initial population. According to the invention, the optimization algorithm is innovatively introduced into the field of optical proximity effect correction, comprehensive optical proximity effect correction is realized by introducing a plurality of optimization indexes, the manufacturing requirement of a high-precision silicon optical chip is effectively met, and the performance of the silicon optical chip is effectively improved.

The invention discloses a layout generation method for load effect compensation and a related device, which are applied to the technical field of photoetching and comprise the following steps: acquiring photomask data; carrying out grid division on the mask graph according to the photomask data, and determining layout density in each grid; comparing the layout density of each grid with a target density, and determining a density difference value corresponding to each grid; determining a virtual graph corresponding to each grid according to the density difference value; and adding a corresponding virtual graph in a layout area corresponding to the grid to form a compensated mask plate graph. By performing grid division on the mask plate graph, calculating the specific layout density in each grid and adding the corresponding virtual graph to the layout area corresponding to the grid according to the difference value between the layout density and the target density, the graph density of the layout area in each grid can be effectively compensated, so that the load effect of each area in the layout is balanced, and the performance of the mask plate is improved. And the etching uniformity is improved.

The invention belongs to the technical field of projection light field regulation and control, and particularly relates to a method and a system for enhancing manufacturability of a projection type structure photomask pattern. Determining an initial mask pattern according to the target structured light field and the magnification of the projection system; calculating an initially generated structured light field by adopting a vector diffraction imaging model, calculating a numerical value of a target function, and judging whether the numerical value meets a preset threshold value or not; if the target function does not meet the preset threshold value, carrying out iterative optimization on the mask pattern by adopting an optimal gradient method until the preset threshold value of the target function is met, and outputting a continuous numerical value mask; pixel splitting or fusion is carried out on the continuous numerical mask according to the required mask manufacturing precision; local integral approximation operation is adopted, binarization processing is carried out on the mask, and the manufacturability of the mask is enhanced. According to the method, the projection type structure light field which is high in degree of freedom, high in efficiency, low in calculation power requirement and robust can be optimized, the mask pattern which can be manufactured can be obtained, and the manufacturing precision of the mask can be adjusted at will so as to adapt to different mask pattern preparation processes.

The invention provides a pattern correction method and correction system for a mask, and the method comprises the following steps: setting a plurality of main patterns and a plurality of auxiliary patterns, and collecting wafer data after photoetching of the main patterns and the auxiliary patterns; searching a main pattern with the same characteristic size as the auxiliary pattern on the mask plate as a reference pattern; acquiring a scaling ratio of the reference pattern transferred to the wafer from the mask plate, and acquiring virtual size data of the auxiliary pattern transferred to the wafer according to the scaling ratio and size information of the auxiliary pattern on the mask plate; and taking the virtual size data and the wafer data as modeling parameters of an optical proximity correction model, and iteratively establishing the optical proximity correction model until the correction error is smaller than a threshold value. The invention provides a pattern correction method and correction system for a mask plate, which can improve the pattern transfer accuracy of photoetching, thereby improving the semiconductor manufacturing yield.

To solve the problem that a conventional large-sized resin photomask storage case cannot be integrally molded by injection molding, and accordingly respective components are created by bonding.SOLUTION: A photomask storage case is composed of a lower case part made of a synthetic resin, and an upper case part blocking the lower case part, wherein the lower case part is composed of a photomask fixing frame which has a fixing part for mounting and fixing a stored photomask, and is composed of a metal frame body, and a lower case body in which the fixing frame is detachably provided. The lower case body is integrally molded by vacuum molding.SELECTED DRAWING: Figure 2

The invention relates to the technical field of semiconductor manufacturing, in particular to a photomask correction method, device and equipment and a medium, and the photomask correction method comprises the steps: obtaining a test layout with known parameters; training the initial optical proximity correction model based on known parameters until the cost evaluation function and the root-mean-square value are minimum, and obtaining an optical correction model; obtaining photochemical reaction parameters of the test layout, training an optical correction model based on the photochemical reaction parameters until the cost evaluation function and the root mean square value are minimum, and obtaining a target layout correction model; and inputting the initial layout into a target layout correction model to obtain a corrected layout, so as to obtain a target photomask based on the corrected layout, and at least ensuring that the exposed photomask pattern is consistent with a target pattern actually expected by a user.

The invention relates to the technical field of display, and provides a method for improving the straightness of a metal mask, which comprises the following steps: measuring the pixel position precision deviation of a plurality of specified point positions of a plurality of sample masks; selecting the X coordinates of the plurality of specified points as an independent variable and the sum of the Y coordinates and the Y-direction deviation as a dependent variable for fitting, or selecting the Y coordinates of the plurality of specified points as an independent variable and the sum of the X coordinates and the X-direction deviation as a dependent variable for fitting to obtain a fitting expression; when a target product is manufactured, a compensation value required by a theoretical coordinate value of a pixel opening point location of the target product is calculated, the theoretical coordinate value of the pixel opening point location in a photomask design layout of the target product is replaced by a compensated actual coordinate value, and the compensated photomask design layout is adopted to expose and manufacture a metal mask plate. The technical problems that the straightness of the metal mask plate is poor, the product yield is poor and the cost is wasted due to the fact that the raw material type is poor are solved.

The invention relates to a method for forming a semiconductor structure. The forming method comprises the following steps: after a hard mask lamination covering a gate structure and a substrate is formed, protecting an NMOS (N-channel Metal Oxide Semiconductor) forming region by using a graphical mask, and performing first anisotropic etching to expose the substrate on two sides of the gate structure in a PMOS (P-channel Metal Oxide Semiconductor) forming region; removing the patterned mask, performing second anisotropic etching, and removing a part of the nitride film in the hard mask laminated layer in the NMOS forming region while forming a source drain groove in the PMOS forming region; protecting the substrate in the NMOS forming region by using an oxide film in the hard mask lamination, forming a sigma-shaped groove in the PMOS forming region, and performing heteroepitaxy; and finally, removing the residual hard mask laminated layer and the gate upper oxide layer and the gate upper nitride layer in the gate structure by using a maskless process. According to the method, a photomask process is only used when the patterned mask is formed, so that the cost of a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process can be reduced, the damage to the substrate can be reduced, and the performance of a device can be improved.

The invention provides a manufacturing method of a shallow trench isolation structure. The manufacturing method comprises the following steps: patterning a pad oxide layer-silicon nitride layer laminated structure based on a photomask to obtain a first mask opening; etching the substrate to obtain an isolation groove; carrying out a pull-back process; depositing a sacrificial layer material in the isolation trench and the first mask opening; forming a shielding layer; patterning the shielding layer based on the photomask to obtain a second mask opening; removing the sacrificial layer material in the isolation groove and obtaining a sacrificial side wall located on the side wall of the opening of the silicon nitride layer; removing the shielding layer and depositing a silicon oxide layer in the isolation groove and the first mask opening; and removing the silicon nitride layer, the liner oxide layer and the sacrificial side wall. According to the method, the first mask opening and the second mask opening are formed in different steps based on the same photomask by adopting the pull-back process, the sacrificial side wall on the side wall of the opening of the silicon nitride layer is used for protecting the trench oxide layer from being lost in the subsequent removal process of the liner oxide layer, and the problem of a sunken region at the top edge of the shallow trench isolation region can be avoided or improved.

The invention discloses a method for checking a mark pattern in photomask data. The method comprises the following steps: providing the photomask data; obtaining cutting channel photomask data from the photomask data as to-be-processed data; performing data conversion on the to-be-processed data to obtain scribe line layout data; according to the original layout data, acquiring photomask layers and position information of all the marked graphs in the scribe line layout data, and standard pattern graphs corresponding to the marked graphs; according to the photomask layers and position information of all the marked graphs in the original layout data and standard pattern graphs corresponding to all the marked graphs, a plurality of preset windows are established at the corresponding positions of the corresponding photomask layers in the scribe line layout data, and one marked graph corresponds to one preset window; in the scribe line layout data, mark graphs in all the preset windows are obtained; according to the marked graph in the preset window and the corresponding standard pattern graph, a judgment result about whether the marked graph in the preset window is correct or not is obtained, and the correctness of marked graph inspection is improved.

The imaging lens assembly (21) of the present application example includes an optical member (32), a lens group (33) and a light shielding member (31). The optical member (32) is configured to bend incident light incident from the object side toward the image side. The lens group (33) is arranged on the image side of the optical member (32) to image the incident light bent by the optical member (32) on the imaging surface. The light shielding member (31) partially blocks the incident light, and the light shielding member (31) includes a light shielding mask (311) and an aperture stop (312). The light shielding member (31) is provided with a first aperture (311a) that partially transmits the incident light. The aperture stop (312) partially shields the incident light on the image side of the optical member (32), and the aperture stop (312) is provided with a second aperture (312a) that partially transmits the incident light. The imaging lens assembly (21) is configured so that tan(DFOV / 2)>0.59, dm≥da.

The invention discloses a threshold voltage adjusting method and a manufacturing method of a semiconductor device and the semiconductor device, and relates to the technical field of semiconductor manufacturing. The threshold voltage adjusting method of the semiconductor device comprises the following steps: providing an MOS substrate, wherein the MOS substrate comprises a first MOS region and a second MOS region; pocket doping ion implantation is carried out on the first MOS region and the second MOS region, and pocket doping regions are respectively formed; thermal diffusion is carried out on the MOS substrate, so that the diffusion degree of pocket doping ions in the second MOS region is smaller than that of pocket doping ions in the first MOS region, and the threshold voltage of the second MOS region is higher than that of the first MOS region. According to the adjusting method, the threshold voltage does not need to be changed in a mode of combining homotype doping and heterotype doping, and the threshold voltage of different MOS regions can be adjusted. According to the manufacturing method, the number of used photomasks can be reduced.

The embodiment of the invention relates to the field of photomasks, and provides a photomask protective film frame and a preparation method thereof, the photomask protective film frame comprises a frame main body made of a metal material and a coating formed on the surface of the frame main body, and the photomask protective film frame is characterized in that the coating is at least composed of carbon black, silicon dioxide particles and organic dye. The nanoscale carbon black in the coating has a high light absorption coefficient, fills gaps of dye molecules and forms a continuous light absorption network, the organic dye enhances absorption of light with specific wavelength through a molecular structure conjugated system, and the nanoscale carbon black and the organic dye form a composite function of broad-spectrum absorption and accurate waveband adjustment, so that more than 95% of light is absorbed in a broad-waveband range, light reflection on the surface of the frame is reduced, and the light absorption efficiency is improved. Pattern distortion caused by reflected light in the photoetching process is avoided, silicon dioxide is embedded into an organic dye matrix, silicon dioxide gaps are filled with carbon black particles, the porosity of the coating is reduced, the wear resistance of the coating is improved, and the cracking risk of the coating is reduced. Optical absorption, wear resistance and weather resistance are synchronously improved.

The invention discloses an optical proximity correction method, a mask plate and a semiconductor structure forming method, and the optical proximity correction method comprises the steps: obtaining a reference layout which comprises a plurality of first metal wire patterns, a plurality of second metal wire patterns and a plurality of cutting patterns; a to-be-corrected graph is obtained from the multiple cut-off graphs, the to-be-corrected graph comprises a first to-be-corrected graph and a second to-be-corrected graph, the first to-be-corrected graph and the second to-be-corrected graph are adjacent, and the distance between the first to-be-corrected graph and the second to-be-corrected graph is smaller than a first preset size; determining a target reference pattern corresponding to the to-be-corrected pattern from the plurality of second metal wire patterns; on the basis of the target reference graph, the first to-be-corrected graph and the second to-be-corrected graph are combined and corrected, a combined graph is obtained, the combined graph is formed, and the situation that a mask design rule is violated is avoided.

The utility model discloses a photomask box bonding glue injection device which comprises an injection pipe, a plate body and a shell, an electric control plate is arranged in the shell, a servo motor is arranged on the inner wall of the shell, the output end of the servo motor is connected with a lead screw, the lead screw is in threaded connection with a rod body, the end of the rod body is connected with a piston, and the piston is in sealed sliding connection with the injection pipe. The output end of the injection tube is in threaded connection with a needle, and a guide strip is arranged on the rod body. The servo motor is electrically connected to drive the lead screw to rotate, the lead screw is in threaded connection with the rod body, under the limitation of the guide strip and the guide opening, the piston is driven to move back, glue is sucked into the injection pipe, the servo motor rotates reversely, the piston is driven to move forwards, the glue is extruded out of the needle head, and after the piston is extruded to the bottom, the elastic piece is compressed. The device plays a role in protection, prevents the piston and the injection tube from being excessively extruded to cause breakage of the injection tube, improves safety, can be operated by a single hand, and is convenient for glue injection and plate sticking.

The invention relates to a photomask data processing method and device, equipment, a medium and a program product. The method comprises the following steps: acquiring current photomask design data; processing the current photomask design data to obtain pattern density information and pattern size information of each target area; a thermodynamic diagram used for representing the defect degree of each target area is generated; obtaining a target area with a defect degree greater than or equal to a defect threshold value, and determining defect classification of the target area based on pattern density information and pattern size information of the target area; when the defect classification comprises pattern density classification, obtaining a target area of a target area, when the target area is greater than an area threshold value, performing functional area identification on the target area, extracting a key signal path in the functional area, determining a splitting boundary based on the functional area and the key signal path, and designing data of a current photomask based on the splitting boundary, and adjusting. By adopting the method, the photomask design data can be optimized in advance.

The utility model discloses a portable photomask box opener which comprises a base and a control unit, and a limiting mechanism, a positioning mechanism and a locking mechanism are arranged on the base. The limiting mechanism is used for limiting the photomask box when the photomask box is placed; the positioning mechanism is used for positioning the photomask box, so that the photomask box can be matched with the locking mechanism in position; the locking mechanism is used for locking the bottom of the photomask box placed on the base; the control unit is electrically connected with the positioning mechanism and the locking mechanism. According to the utility model, the portable box opening of the photomask box can be realized, after the photomask box is placed on the base, the locking mechanism is manually controlled to lock the bottom of the photomask box, and then the outer cover of the photomask box can be manually taken up, so that the portable box opening is realized.

A method for correcting a photomask is presented that includes receiving a target design layout of a semiconductor device. The method includes inferring, by a processor, a mask bias by inputting optical feature values, geometric feature values, and resist feature values of a mask layout based on a target design layout into a first machine learning model. The processor generates a predicted pattern by incorporating the mask deviation into the mask layout, compares the predicted pattern with a target design layout, and then corrects the mask layout based on a result of the comparison between the predicted pattern and the target design layout.

Systems, apparatus, articles of manufacture, and methods to improve detection of defects in photomask blanks are disclosed. An example apparatus includes: interface circuitry; machine readable instructions; and programmable circuitry to at least one of instantiate or execute the machine readable instructions to: identify a first potential defect in a photomask blank based on an intensity value not satisfying a first threshold but satisfying a second threshold, the intensity value based on pixel data associated with a first type of inspection of the photomask blank; and designate the first potential defect as a detected defect based on first coordinates for the first potential defect being within a threshold distance of second coordinates for a second potential defect, the second potential defect identified based on a second type of inspection of the photomask blank.

The present invention relates to the technical field of semiconductor carriers, and particularly relates to a photomask box with a washable base, which includes a base and a locking mechanism. The locking mechanism includes a rotating disk, an elastic connecting member, and a locking plate. The rotating disk includes a disk body, a connecting column, and a sliding groove. Compared with the prior art, by providing the elastic connecting member made of plastic or rubber, self-locking during opening and closing is achieved while avoiding metal ion contamination during pickling, enabling the base to be cleaned and being applicable to both acidic and alkaline environments. The arrangement direction of the elastic limit columns is perpendicular to the movement direction of the locking plate, shortening the length of the elastic connecting member, so that the structural strength of the elastic connecting member made of plastic or rubber meets the usage requirements. And by providing the rollers and the locking inclined blocks, the situation where the elastic connecting member made of plastic or rubber is not strong enough to support the locking plate is prevented.

The utility model relates to a photomask protective film dismounting device which comprises an object placing table, and a limiting piece, a dismounting assembly and a first temperature sensor are fixed on the object placing table; the upper surface of the storage table is coated with a teflon coating; and a cooling device is arranged in the object placing table and is used for maintaining the temperature of the upper surface of the object placing table at 5-10 DEG C, so that the adhesive between the photomask and the photomask protective film is hardened for subsequent analysis of the photomask protective film. The photomask protective film dismounting device designed by the utility model can be used for solving the problems that an adhesive is easy to splash and pollute the surface of a photomask when a heating method is used for dismounting, fogging spots are possibly caused during cleaning, and the cleanliness and the precision of the photomask are influenced; and damage is easily caused by direct tool dismounting, so that the cost is increased, and the service life of the photomask is shortened.

Systems and methods are provided for automated generation of optical proximity correction (OPC) recipes for producing photomasks for patterning semiconductor wafers, thereby improving the overall efficiency and effectiveness of computational lithography in modern semiconductor manufacturing. According to at least one embodiment, an OPC recipe is generated by a two-stage process that includes a reinforcement learning (RL) stage, for generating OPC actions for representative design patterns, and a large language model (LLM) stage, for generating an OPC recipe based on the OPC actions provided by the RL stage.

The invention discloses a rotary multi-mask parallel rapid exposure system and method. The rotary multi-mask parallel rapid exposure system mainly comprises a light source module, a light beam scanning module, a turntable group, a projection objective lens and a workpiece table, wherein the light source module is used for generating an illumination light beam for exposing the mask plate; the light beam scanning module is used for reflecting laser beams emitted by the light source and scanning according to a certain angular velocity to form a light spot array; the turntable group is used for defining a plurality of patterns required by photoetching processing; the projection objective lens is used for transferring the pattern on the mask plate to the surface of the sample; and the workpiece table is used for quickly stepping the sample. The invention discloses a rotary multi-mask parallel rapid exposure system and method, the exposure system not only can realize rapid transfer of mask patterns based on a distributed stepping method, but also can realize parallel exposure of various mask images, and the exposure system is simple in structure, easy to implement and low in cost. The exposure efficiency of the illumination system and the flexibility of the illumination mode can be greatly improved, so that the photoetching processing efficiency is improved.

Method for particle beam-induced etching of a defect (D1) of a photomask (100) for microlithography, comprising the steps: a) Providing (S1) an activating particle beam (114) and a first gaseous component (116) activatable by the particle beam (114) at a surface (118) of the photomask (100) in a region (120) of the defect (D1) for etching the defect (D1), and subsequently b) Providing (S2) a spontaneously oxidizing oxygen-containing second gaseous component (126) at the surface (118) of the photomask (100) in a passivation area (122) encompassing the area (120) of the defect (D1) for passivation of the surface (118).

The invention discloses a photoetching method and a photoetching machine. The photoetching method comprises the following steps: acquiring flatness information of a wafer surface and bending information of a photomask; according to the flatness information, determining position information of the wafer when different positions of the surface of the wafer are located on a focusing plane of a photomask pattern under the condition that the photomask is not bent; compensating the position information based on the bending information to obtain new position information; and carrying out photoetching on the wafer at the position indicated by the new position information by utilizing the photomask. According to the method and the device, the photomask bending can be accurately compensated, so that the influence of the photomask bending on the key size uniformity and the alignment deviation compensation value uniformity in the exposure unit is eliminated.

The invention relates to a method for treating defects (D) in a microlithographic photomask (100), in which a process gas is activated by means of a particle beam (802), in which a control unit (828) is provided for controlling a deflection unit (816) having a control bandwidth (GF), in which the deflection unit (816) for deflecting the particle beam (802) is configured to direct the particle beam (802) over the photomask (100), and in which the deflection unit (816) is configured to deflect the particle beam (802) over the photomask (100). Comprising the steps of a) providing (S1) an image (200 ') of at least a portion of the photomask (100), b) determining a repair shape (108, 500, 502, 1102, 1104, 1300-1304, 1400-1410, 1500-1508) in the image (200') based on a control bandwidth (GF), where the repair shape (108, 500, 502, 1102, 1104, 1300-1304, 1400-1410, 1500-1508) comprises a defect (D), and c) providing a particle beam (802) at m pixels (410) of the repair shape (108, 500, 502, 1102, 1104, 1300-1304, 1400-1410, 1500-1508) by means of a deflection unit (816) and activating a process gas to treat the defect (D).

The present invention relates to the technical field of microelectromechanical system manufacturing, and particularly relates to a micro-hemispherical gyro structure with a curved surface electrode and a preparation method thereof; the method includes coating the outer surface of a micro-hemispherical resonator, coating the inner and outer surfaces of the micro-hemispherical curved surface electrode and spraying photoresist; aligning a photomask plate with an optical lens structure with the inner surface of the micro-hemispherical curved surface electrode, performing photolithography and development to pattern the photoresist of the curved surface structure; using the photoresist as a mask to pattern the metal film on the micro-hemispherical curved surface electrode to form excitation detection electrodes, shielding electrodes, and anchor electrodes; coaxially aligning the micro-hemispherical resonator with the micro-hemispherical curved surface electrode, curing and conducting the resonator anchor points and the curved surface electrode anchor points, and fixing the reference surface of the outer edge of the curved surface electrode on a buffer plate to form a micro-hemispherical gyro structure with a curved surface electrode; the present invention can effectively reduce the process difficulty and cost of manufacturing the curved surface electrode and has better thermal adaptation performance.

The invention relates to the field of semiconductors, and discloses a back-illuminated image sensor and a manufacturing method thereof, and the method comprises the steps: forming a groove in a bonding pad region of a substrate through employing photoetching and etching technologies; depositing an isolation layer on the surface of the substrate, wherein the isolation layer comprises two isolation unit layers formed by alternately stacking different materials; one isolation unit layer serves as a grinding barrier layer in the grinding process, and the grinding barrier layer is located in the isolation layer; manufacturing a through hole in the isolation layer in the groove and forming a conductive layer in the groove; depositing a dielectric layer on the surface of the processed substrate; grinding for multiple times to remove the dielectric layer and the isolation layer on the surface of the processed substrate; forming a substrate grounding structure in a logic circuit region corresponding to the substrate, and forming a metal grating structure in a pixel region of the substrate; and at least removing the dielectric layer in the groove to at least expose part of the conductive layer. And the dielectric layer and the isolation layer on the surface of the processed substrate are removed in a grinding manner, so that the publishing of one layer of photomask and one time of photoetching can be reduced, and the production cost is reduced.

The invention relates to a method, in particular a photolithographic method, for producing a spectacle lens (100) for myopia control for an eye of a wearer of spectacles, comprising the following steps: – providing a spectacle lens to be processed, having a multiplicity of microparticles (130) and a processing layer which is adjacent to the multiplicity of microparticles (130) or has the multiplicity of microparticles (130), the processing layer comprising at least one photoreactive layer (110); and – producing microstructures (150) in the photoreactive layer (110) by exposing the photoreactive layer (110) using an exposure means (BM), wherein at least some of the multiplicity of microparticles (130) act as a photomask for the exposure.