500 results about "Photomask" patented technology

The invention provides a manufacturing method of a shallow trench isolation structure. The manufacturing method comprises the following steps: patterning a pad oxide layer-silicon nitride layer laminated structure based on a photomask to obtain a first mask opening; etching the substrate to obtain an isolation groove; carrying out a pull-back process; depositing a sacrificial layer material in the isolation trench and the first mask opening; forming a shielding layer; patterning the shielding layer based on the photomask to obtain a second mask opening; removing the sacrificial layer material in the isolation groove and obtaining a sacrificial side wall located on the side wall of the opening of the silicon nitride layer; removing the shielding layer and depositing a silicon oxide layer in the isolation groove and the first mask opening; and removing the silicon nitride layer, the liner oxide layer and the sacrificial side wall. According to the method, the first mask opening and the second mask opening are formed in different steps based on the same photomask by adopting the pull-back process, the sacrificial side wall on the side wall of the opening of the silicon nitride layer is used for protecting the trench oxide layer from being lost in the subsequent removal process of the liner oxide layer, and the problem of a sunken region at the top edge of the shallow trench isolation region can be avoided or improved.

Systems and methods are provided for automated generation of optical proximity correction (OPC) recipes for producing photomasks for patterning semiconductor wafers, thereby improving the overall efficiency and effectiveness of computational lithography in modern semiconductor manufacturing. According to at least one embodiment, an OPC recipe is generated by a two-stage process that includes a reinforcement learning (RL) stage, for generating OPC actions for representative design patterns, and a large language model (LLM) stage, for generating an OPC recipe based on the OPC actions provided by the RL stage.

Provided is a method for fabricating a semiconductor device, the method including exposing a first pattern corresponding to a mask pattern to light in a first shot region of a substrate by using a photomask including the mask pattern, the first pattern extends in a first direction, and exposing a second pattern corresponding to the mask pattern to the light in a second shot region disposed adjacent to the first shot region of the substrate by using the photomask, the second pattern extends in a second direction, wherein the first direction crosses the second direction.

1. Name of the product in this design: Photomask enclosure. 2. Purpose of this design: for storing and transporting photomasks. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: a 3D model.

A display panel (2) and a display apparatus (100). A liquid crystal dimming module (30) of the display panel (2) is located on a light exit side of a liquid crystal display module (20), and dimming sub-pixels (SP2) on the liquid crystal dimming module (30) and display sub-pixels (SP1) on the liquid crystal display module (20) are arranged in a manner of corresponding to each other on a one-to-one basis, so as to achieve finer local dimming and improve the contrast ratio of a liquid crystal display surface; in addition, the dimming sub-pixels (SP2) on the liquid crystal dimming module (30) use a passive driving mode, such that the number of photomasks and processes can be reduced, and thus the costs can be reduced.

The present application discloses a double pattern exposure photomask correction method, a photomask correction device and a layout machine learning model training method. The double pattern exposure photomask correction method includes the following steps. A photomask layout target image is obtained. The photomask layout target image is decomposed into two photomask layout sub-images. The photomask layout sub-images overlap in a connection area. A layout machine learning model analyzes the size of the connection area according to the photomask layout target image. The layout machine learning model is established according to a three-dimensional information after etching. An optical proximity correction program is performed on the photomask layout sub-images.

A mask layout optical proximity correction (OPC) method includes determining a target pattern to be formed on a substrate, simulating a photomask layout based on the target pattern, applying a bias to the simulated photomask layout, thereby correcting the photomask layout into a first modeling layout, and selecting one of control parameters obtained through modeling using a layout of a split mask, thereby deforming the first modeling layout into a second modeling layout, and checking whether or not there is a mask rule check (MRC) violation, based on the second modeling layout.

This invention provides a photomask-based light projector, depth camera, and item picking system, comprising: a light source for projecting a linear laser array; a microlens array disposed on the light-emitting side of the light source for receiving the linear laser array and homogenizing it into a surface light; and a photomask, including a pre-set pattern structure disposed on the light-emitting side of the microlens array for receiving the surface light and projecting a structured light pattern according to the pattern structure. In this invention, a rotating mirror drives the rotation of multiple light-reflecting surfaces to reflect the linear laser projected by the light source onto the microlens array to form a linear laser array. The microlens array then homogenizes the linear laser array into a surface light, which is then projected into a structured light pattern through the photomask. This not only significantly improves the light projection power compared to VCSEL-based structured light technology but also provides a significantly denser light spot compared to galvanometer scanning devices, thereby improving the resolution of the depth camera.

A method for detecting photomask defect including rendering a simulated photomask contour based on photomask design data, manufacturing a photomask based on the photomask design data, and performing an inspection for photomask defects by comparing the rendered simulated photomask contour with the manufactured photomask.

The invention relates to the technical field of semiconductor packaging, in particular to a packaging structure and a packaging method for correcting a vertical routing exposed position. The packaging structure for correcting the exposed position of the vertical wire bonding comprises a substrate, and is characterized in that a plurality of packaging units are arranged on the substrate, each packaging unit comprises a step-type stacked chip group, and each chip group is bonded with the substrate through a vertical lead; and one end, close to the substrate, of the vertical lead is connected with the salient point. Compared with the prior art, the packaging structure and the packaging method for correcting the exposed position of the vertical wire bonding have the advantages that interconnected salient points are grown in situ at the exposed position of the wire bonding metal, the size of the salient points can be flexibly adjusted through a photomask on the basis of a one-time patterning process, and the abnormal bridging short circuit in the subsequent welding process can be effectively improved.

This invention relates to the field of circuit production line technology and discloses an automatic transfer system for integrated circuit production lines, addressing the technical problems of low transfer efficiency and poor space utilization in existing technologies. The system includes: a three-dimensional storage scheduling module located on one side of the production line, used to store wafer cassettes or photomasks and generate material release instructions according to the production cycle; a vertical conveying system located below the storage module, used to transport materials from a first plane where the three-dimensional storage is located to a second plane flush with the cleanroom floor; and a horizontal conveying system located on the second plane, used to receive materials and complete automatic handover with the production equipment. This application enables fully automated transportation of materials from three-dimensional storage to the production equipment without manual intervention, significantly reducing labor costs and improving the automation level of the production line and the utilization rate of storage space.

A photomask, a method of forming a pattern, a method of manufacturing a display device, and an electronic device are provided. The photomask includes a transparent substrate having a first surface and a second surface opposite each other, a first semi-transparent layer disposed on the first surface of the transparent substrate, a light-blocking layer disposed on the second surface of the transparent substrate, and a second semi-transparent layer disposed between the second surface of the transparent substrate and the light-blocking layer. The second semi-transparent layer has a transmittance higher than that of the first semi-transparent layer.

The purpose of the present invention is to provide an EUV photomask blank and an EUV photomask which have high resistance to hydrogen radicals, low EUV reflectance, and a high OD value. A reflective mask blank (10) according to an embodiment of the present invention is provided with at least a substrate (1), a multilayer reflective film (2), a cover layer (3), and a low-reflection part (5) in which a first absorption film (51) having high hydrogen radical resistance and a second absorption film (52) having high hydrogen radical resistance are alternately laminated. The extinction coefficient of the first absorption film (51) is different from the extinction coefficient of the second absorption film (52), or the refractive index of the first absorption film (51) is different from the refractive index of the second absorption film (52), and the extinction coefficient of the second absorption film (52) with respect to EUV light is 0.04 or more.

To provide a photomask blank manufacturing method and a photomask manufacturing method that can improve the dimensional accuracy of a pattern in a photomask while easily performing dimensional control of the pattern during the manufacturing of the photomask. The photomask blank manufacturing method is for manufacturing a photomask blank (2) that divides the surface of a transparent substrate (3) into a first pattern region and a second pattern region, and forms a first functional film in the first pattern region and a second functional film in the second pattern region.

This invention provides a processing system and method for improving the critical dimension uniformity of wafers. The processing system includes an exposure module for exposing a monitoring pattern to an effective pattern area on a photomask; a detection module for acquiring dimensional deviation data of the monitoring pattern and detecting the dimensional deviation data to ensure that the dimensional deviation data is within a preset range; and a photolithography module for transferring the pattern on the photomask to the wafer. The detection module is further used to measure critical dimensions on the wafer, acquiring measurement data at different locations within each exposure area on the wafer. The photolithography module is used to adjust the required exposure dose for the exposure area based on the measurement data to improve the critical dimension uniformity of the wafer. The processing system and method for improving the critical dimension uniformity of wafers provided by this invention can improve the critical dimension uniformity of wafers.

This invention provides a method for defining the encoding mode of a read-only memory (ROM) using metal wires. A substrate is provided, and a semiconductor ROM device is formed on the substrate. The top of the semiconductor device includes an interlayer dielectric layer, multiple spaced metal wires located within the interlayer dielectric layer, and a top metal layer. The continuity or disconnection of the metal wires determines the ROM's encoding mode. A photoresist layer is formed on the interlayer dielectric layer, with a thicker photoresist layer above the top metal layer and the area adjacent to the metal wires. For different products, the required encoding mode and corresponding photolithography energy are selected. Utilizing the loading effect of the photoresist layer on adjacent metals and the top metal layer, the photoresist layer on each product is opened using a photomask defining the top metal layer and the corresponding photolithography energy. The corresponding metal wires are etched according to the encoding mode of each product. This invention defines the ROM's encoding mode type by cutting the exposed metal wires, requiring only an additional metal wire etching step.

The embodiment of the present disclosure relates to a photomask and a detection method, device, equipment and medium thereof, the photomask comprises a photomask body and a light calibration mark arranged on the photomask body; the photomask body comprises a first material substrate, a first pattern layer of a second material and a second pattern layer of a third material which are sequentially stacked along a first direction, the first pattern layer and the second pattern layer are used to jointly define a transfer pattern of the photomask; the light calibration mark comprises a first mark pattern of the first material, a second mark pattern of the second material and a third mark pattern of the third material which are sequentially arranged along a second direction; wherein the first direction is perpendicular to the second direction. The embodiment of the present disclosure improves the efficiency and accuracy of defect detection of the photomask, thereby improving the yield and reliability of the semiconductor product.

The invention discloses a method for improving white pixels of an image sensor, and the method comprises the steps: providing a substrate which comprises a semiconductor substrate and an epitaxial layer, the substrate is provided with a pixel region and a logic region, and the pixel region and the logic region are respectively provided with a plurality of source and drain regions; providing a photomask, and exposing the epitaxial layer of the source and drain regions; a first ion injection step: injecting first ions into a first depth of the source-drain region, and carrying out pre-amorphization treatment; a second ion injection step: injecting second ions into a second depth of the source-drain region to form a doped layer; a third ion injection step: injecting third ions into a third depth of the source-drain region to form a co-doped layer; wherein the first depth > = the second depth > = the third depth. A sandwich type ion implantation mode is adopted, B ions needing to be doped in the pixel area and B ions and F ions needing to be doped in the logic area are implanted, a traditional BF2 ion implantation mode is replaced, metal impurities possibly introduced by BF2 ion implantation are avoided, and the quality of the image sensor is improved.

Methods and systems for constructing a photomask from obtained pattern information relating to the photomask displaying defects on a wafer. The pattern information is spatially domain analyzed such that a corrected photomask structure can be generated and applied to the photomask layout. A photomask is constructed using the corrected photomask structure. And the effectiveness of the photomask is verified.

The present disclosure provides a phase-shifting photomask including first feature patterns arranged in a first direction and extending in a second direction cross the first direction, a second feature patterns arranged in the first and second directions in which the first features are between the second features, and third feature patterns between the first feature patterns and between the second feature patterns. Each of the first and second feature patterns includes a first pattern and second patterns sandwiching the first pattern there between. The third feature patterns, the first pattern and the second patterns have transmittances greater than 97%, and the second patterns can allow the light beam passed through the second patterns to have a phase difference of about 177° to about 183° with the light beam passed through the first pattern and the third feature pattern.

An optical proximity correction method, system, device, and storage medium are disclosed. The method includes: acquiring a periodic region comprising multiple arrayed, periodically repeating minimum repeating units, wherein the repeating period of the minimum repeating units along the row direction is a first period, and the repeating period of the minimum repeating units along the column direction is a second period; in a layout graphic layer, adjacent main graphics with a spacing of the first period along the row direction and a spacing of the second period along the column direction are marked using color-coded markers, the color-coded markers being used to mark the main graphics split onto the same photomask; based on the splitting markers, the color-coded markers, and the number of photomask splits, the multiple main graphics in the layout graphic layer are subjected to graphic splitting processing to split the multiple main graphics into multiple photomasks. This embodiment of the invention ensures the regularity of the main graphics in the multiple photomasks after splitting and the consistency of the surrounding environment, which is beneficial for quickly replicating the graphic correction results under the same environment.

A method for forming a line and space pattern according to one embodiment of the present invention includes exposing a mask on a substrate in a first direction and a second direction and stitching the mask. The method for forming a line and space pattern includes the steps of performing a first exposure on the substrate such that first shots of the mask contact each other in the first direction; and performing a second exposure on the substrate such that second shots of the mask contact each other, spaced apart from the first shots in the second direction and offset from the first shots in the first direction.

The application provides a method for measuring the white edge width of a photomask, comprising: providing a photomask, obtaining a secondary electron signal curve of a pattern in the photomask; obtaining a mutation point of the secondary electron signal curve, wherein the mutation point comprises a white edge starting point and a white edge ending point; setting a first threshold range and a second threshold range according to the white edge starting point and the white edge ending point, and obtaining a first characteristic peak width corresponding to the secondary electron signal curve according to a plurality of first thresholds, and obtaining a second characteristic peak width corresponding to the secondary electron signal curve according to a plurality of second thresholds; obtaining an optimal threshold combination in a plurality of threshold combinations, and obtaining a material coefficient of the photomask; and obtaining the white edge width of the pattern in the photomask; the application realizes the measurement of the white edge width of the photomask, can improve the accuracy of the measurement, and makes the measurement result adapt to different photomask materials in combination with the material coefficient.

This application provides a display panel including a first conductive layer, at least one first insulating layer, a first active layer, and a second conductive layer. The first conductive layer includes a first conductive portion, the first active layer includes a first active portion, and the second conductive layer includes a first electrode and a second conductive portion. The display panel has a first hole and a second hole. By making the first hole penetrate the first active portion and the first insulating layer, and making the second hole penetrate the first insulating layer, the first electrode can be connected to the first active portion through the first hole, and the second conductive portion can be connected to the first conductive portion through the second hole. In this way, the first hole and the second hole can be formed simultaneously using the same photomask, without the need to use different photomasks to form the first hole and the second hole separately. Therefore, the number of photomasks can be reduced, and the manufacturing process can be simplified, thereby improving the production efficiency of the display panel and reducing the production cost.

A method for manufacturing an inkjet head chip includes: 1) providing an inkjet head wafer, wherein a first surface of the inkjet head wafer has at least one polymer thick film; 2) providing a polymer thin film, wherein a second surface of the polymer thin film is coated with an adhesion promoter; 3) rolling the polymer thin film onto the polymer thick film of the inkjet head wafer in a wafer-to-wafer manner; 4) spin-coating a siloxane photoresist onto a third surface of the polymer thin film, and performing photomask alignment on the inkjet head wafer by examining the siloxane photoresist and the polymer thin film; 5) exposing and developing the siloxane photoresist; and 6) etching the polymer thin film to form a plurality of nozzle plates and at least one protective rib.

The application discloses a robot gripper device compatible with a photomask and a photomask box, relates to the technical field of semiconductor automation equipment, and improves the problems of complex equipment structure, low space utilization and high operation and maintenance cost caused by the separation of the photomask and the photomask box taking and placing functions in the prior art.The robot gripper device comprises a base, a driving mechanism, a photomask taking and placing unit and a photomask box taking and placing unit, the base is sequentially provided with a first rotating arm and a second rotating arm from bottom to top, and the second rotating arm is rotationally provided with a mounting plate at the end portion; the photomask taking and placing unit is arranged on one side of the mounting plate and comprises a first gripper; the photomask box taking and placing unit is arranged on the other side of the mounting plate and comprises a second gripper; the first gripper and the second gripper are both provided with telescopic extension arm assemblies; the driving mechanism drives the first rotating arm and the second rotating arm to move cooperatively, so as to drive the mounting plate to rotate and switch, and the working states of the two taking and placing units are controlled; and the application has the effects of being compatible with taking and placing of two workpieces, simplifying the equipment structure, saving space and reducing cost.

The present application relates to a kind of parallel positioning device of photo mask edge cleaning equipment, including mounting bracket, two sliding range finding mechanisms, strip nozzle and rotary drive mechanism;Two sliding range finding mechanisms are located in the two sides of the mounting bracket, including sliding piece on the mounting bracket and the range finding sensor for measuring the distance between it and calibration piece and installed on the sliding piece;The middle position of strip nozzle is rotatably installed on the mounting bracket, and each end is connected with a sliding piece by a linkage mechanism, and the sliding piece is driven to slide by the linkage mechanism in the process of rotating the strip nozzle;Rotary drive mechanism is installed between the mounting bracket and the strip nozzle, for driving the strip nozzle to rotate to the position that the distance measured by two range finding sensors is equal.The present application can conveniently position the strip nozzle in parallel.

A pellicle for a reflective photo mask includes a frame, a core layer having a front surface and a rear surface, and disposed over the frame, a first capping layer disposed on the front surface of the core layer, an anti-reflection layer disposed on the first capping layer, a barrier layer disposed on the anti-reflection layer, and a heat emissive layer disposed on the barrier layer.

This invention discloses a method for protecting the bottom of trenches in wet etching using a photoresist partial filling process. The method includes: fabricating a trench structure on a predetermined area of ​​the wafer surface using plasma etching; applying photoresist to the entire trench structure and the entire wafer surface using spin coating; performing exposure and development on the entire surface of the wafer covered with photoresist using a photolithography machine without a photomask, thereby removing some of the photoresist on the upper surface of the wafer oxide layer and in the upper region of the trench structure, leaving the remaining photoresist in the trench area in a partially filled state; and removing the exposed oxide layer on the wafer surface, thus protecting the bottom of the trench from damage using the remaining photoresist in the trench area. This invention is applicable to both plasma etching and wet etching, effectively reducing the difficulty, cost, and time of etching processes, achieving low cost and a simple process. It is a novel method for eliminating damage to the bottom of deep trenches by using photoresist filling in deep trenches, suitable for wet etching.

The utility model relates to a mould mounting component for pouring an LED (light-emitting diode) photomask, which belongs to the technical field of pouring of the LED photomask and comprises a bottom plate and four cylinders fixedly connected to the top of the bottom plate, and a mounting component for mounting a mould is arranged among one ends of piston rods of the four cylinders. The mounting assembly comprises a connecting table fixedly connected between one ends of piston rods of the four air cylinders, a motor is fixedly connected to the bottom of the connecting table, a transmission rod is fixedly connected to an output shaft of the motor, a transmission gear is fixedly connected to the outer side of the transmission rod, and driven gears are engaged with the left side and the right side of the transmission gear. The inner side of the circle center of the driven gear is fixedly connected with a threaded rod, the outer side of the threaded rod is in threaded connection with a threaded block, and the top of the threaded block is fixedly connected with a connecting block. According to the mold mounting assembly for pouring the LED photomask, the transmission mechanism is driven by the motor to drive the positioning block to move, so that adjustment is carried out according to the size of a mold.