69 results about "Phase-shift mask" patented technology

In an example, the present invention provides a method of manufacturing a polarization-degenerate fiber Bragg grating nanofiber cavity for quantum computing or quantum repeater. The method includes transmitting electromagnetic radiation characterized by a wavelength of 150 nm to 400 nm and longer through a pattern of a phase shift mask to diffract the electromagnetic radiation to form an interference pattern. The pattern is to be illuminated onto a core of a first end of a fiber optical cable region. In an example, the method forms a fiber Bragg grating onto the core of fiber optical cable region by changing a refractive index of the core of fiber optical cable region using the electromagnetic radiation while rotating the fiber optical cable about an axis defined along a length of the fiber optical cable region.

The invention provides a dry etching method for a molybdenum silicide layer, and relates to the field of semiconductor mask plates. The method is used for performing dry etching pattern transfer on the molybdenum silicide phase shift layer in the phase shift mask. The method comprises the following steps of: 1, putting a patterned molybdenum silicide layer into an ICP (Inductively Coupled Plasma) dry etching machine; 2, mixed SF6 gas and Ar gas are introduced into the etching cavity; and 3, the plasma concentration is regulated and controlled by controlling the ICP source, the plasma bombardment kinetic energy is regulated and controlled through the RF source, and etching of the molybdenum silicide layer is completed. According to the dry etching method, SF6 and Ar are adopted as etching gas, a good etching selection ratio and good morphology can be obtained by controlling the gas proportion, the ICP power and the RF power, and the dry etching method has the advantages of being good in safety, low in production cost and the like.

The invention relates to a phase shift mask layout forming method and device, computer equipment, a storage medium and a computer program product. The method comprises the following steps: acquiring an initial mask layout, wherein the mask layout comprises a main pattern positioned in a light-transmitting area; performing exposure simulation based on the initial mask layout, and obtaining a sidelobe position area where a sidelobe pattern appears; determining a target graph in the main graph according to the side lobe position area; a shading auxiliary pattern is added into the target pattern to update the mask layout, and the size of the shading auxiliary pattern is smaller than the exposure precision. By adopting the method, the sidelobe pattern phenomenon can be improved.

The application provides a phase shift mask and a manufacturing method thereof. In the application, a second key pattern size corresponding to a second photoetching process is obtained, and a second photoetching machine is obtained according to the second key pattern size. The resolution identification ability of the obtained second photoetching machine is matched with the second key pattern size, so that the problem that the resolution ability of the photoetching machine used in the second photoetching process is not enough and the formed phase shift mask is defective is avoided, and the quality of the phase shift mask is improved.

The invention relates to a phase shift mask substrate and a dynamic magnetron sputtering preparation method thereof, a MoSi-based gradient film layer is continuously and dynamically deposited on the substrate, and the method comprises the following steps: carrying out first-stage deposition on the substrate by adopting a molybdenum-silicon alloy target so as to form a transition layer; carrying out second-stage deposition on the transition layer to form a main body functional layer through deposition; and third-stage deposition is carried out on the main body functional layer to form a surface modification layer through deposition, and the MoSi-based gradient film layer is obtained. The invention provides a one-step sputtering deposition method capable of dynamically and accurately regulating and controlling, so that the inherent contradiction between the performance and the stress of a single-layer uniform film is fundamentally solved, and the complexity and the uncertainty of a traditional multi-step process are avoided.

The present invention discloses a method for manufacturing a phase shift mask blank with a low refractive index and a low extinction coefficient, comprising: selecting a phase shift mask blank substrate with a refractive index below 1.6 and an extinction coefficient below 0.05; polishing and cleaning the substrate; stacking a transition layer on the substrate, with the difference between the refractive index n1 of the transition layer and the refractive index n2 of the substrate within 0.3; stacking a phase shift layer on the transition layer, with the differences between the refractive index n3 of the phase shift layer and the refractive index n1 of the transition layer and the refractive index n2 of the substrate respectively within 0.5, and the extinction coefficient k1 of the phase shift layer for light with a wavelength of 190 - 900 nm being below 0.9; stacking a chromium film layer on the phase shift layer; and stacking a photoresist on the chromium film layer. The method for manufacturing a phase shift mask blank provided by the present invention can maintain a low extinction coefficient across the entire wavelength range of 190 - 900 nm, reduce the lithography time under each exposure light source, improve the lithography efficiency, and at the same time ensure that the film thickness of the phase shift film is conducive to the formation of a lithography structure.

One method includes transmitting electromagnetic radiation characterized by a wavelength of 150 nm to 400 nm and longer through a pattern of a phase shift mask to diffract the electromagnetic radiatio

Provided are a photomask blank capable of forming a nanofabrication resist pattern on a resist film with a high accuracy, a method for manufacturing a photomask, and a photomask manufactured by the method. A mask blank (100) according to the present embodiment is a mask blank used to manufacture a phase shift mask (200), to which exposure light having a wavelength of 200 nm or less is applied, and includes, in the following order, a translucent substrate (1), a phase shift film (2), and a light shielding film (3), and a hard mask film (4), in which the light shielding film (3) is formed of a material containing Cr, the hard mask film (4) includes a lower layer (41) positioned on a side of the light shielding film (3), and an upper layer (42) configuring an outermost layer of the hard mask film (4), the lower layer (41) contains at least one selected from Ta, Te, Ru, and a compound thereof, the upper layer (42) contains Ta or a Ta compound, and the compound contains at least one selected from O, N, and C.

A write pole of a write head of a hard disk drive can be manufactured by forming a photoresist layer over a magnetic material layer located over a substrate, disposing a tri-tone lithographic mask over the photoresist layer, lithographically exposing the photoresist layer through the lithographic mask, developing the photoresist layer to form a patterned photoresist layer, and patterning the magnetic material layer into the write pole by removing portions of the magnetic material layer that are not covered by the photoresist layer. The tri-tone lithographic mask includes a patterned opaque material layer and a patterned partially-transparent material layer located over a transparent substrate. The patterned opaque material layer includes a uniform width region and a flare region. The patterned partially-transparent material layer includes a pair of partially-transparent strips extending adjacent to a respective edge of the patterned opaque material layer, and partially-transparent assist bars.

A method for fabricating a polarization-degenerate Bragg grating nanofiber cavity for quantum computing or quantum repeaters. The method involves transmitting electromagnetic radiation with wavelengths from 150 nm to 400 nm and longer through a phase-shifting mask pattern to diffract the electromagnetic radiation and form an interference pattern. The pattern is illuminated onto the core of one end of a fiber optic cable region. In one example, the method forms a Bragg grating on the core of the fiber optic cable region by changing the refractive index of the core using electromagnetic radiation while rotating the fiber optic cable around a defined axis along the length of the fiber optic cable region. Figure for the abstract: Figure 1a

There are provided a phase shift mask having a small number of haze defects, that is, a phase shift mask capable of sufficiently suppressing occurrence of haze, and a method for manufacturing the phase shift mask. A phase shift mask (100) according to the present embodiment includes a substrate (11), a phase shift film (12) that is formed on the substrate (11) and has a circuit pattern, and a protective film (13) that is formed on an upper surface (12t) and a side surface (12s) of the phase shift film (12), in which the phase shift film (12) enables adjustment of each of phase and transmittance with respect to exposure light to be transmitted to a predetermined extent, the protective film (13) contains at least one selected from a tantalum metal, a tantalum compound, a tungsten metal, a tungsten compound, a tellurium metal, or a tellurium compound, and when a film thickness of the phase shift film (12) is denoted by d1 and a film thickness of the protective film (13) is denoted by d2, d2 is thinner than d1, and d2 is 15 nm or less.

The invention relates to a phase shift mask blank and a manufacturing method of a phase shift mask. The phase shift mask blank includes a phase shift film and a light shielding film formed in contact with the phase shift film and formed of a chromium-containing material, in which the phase shift film is formed of a material containing silicon and not containing carbon, the light shielding film is formed of a material containing chromium, oxygen, nitrogen, and carbon, the light shielding film has a laminated structure including four layers: a first layer, a second layer, a third layer, and a fourth layer, the first layer is a layer farthest from the transparent substrate, the fourth layer is a layer in contact with the phase shift film, the second layer is a layer comprising carbon, and the fourth layer in contact with the phase shift film is a layer not comprising carbon.

The present invention provides a mask blank that can produce patterns with different transmittances with desired accuracy without complicating the mask manufacturing process, and that can achieve a desired phase shift function in each pattern. The mask blank includes a transmittance adjustment film on a phase shift film. The phase shift film creates a phase difference of 150 degrees or more and 210 degrees or less between ArF excimer laser exposure light after passing through the phase shift film and the exposure light after passing through air only at a distance equal to the thickness of the phase shift film. The refractive index of the transmittance adjustment film at the wavelength of the exposure light is set to n U , let the extinction coefficient at the wavelength of exposure light be k U , and set the thickness to d U [nm], the following equations (1) and (2) are satisfied at the same time. U ≤‑17.63×n U 3 +142.0×n U 2 -364.9×n U +315.8 formula (2): d U ≥‑2.805×k U 3 +19.48×k U 2 -43.58×k U +38.11.

The purpose of the invention is to provide a phase shift mask that can be formed in a shorter takt time than when a mask provided with a phase-shift film having a transmittance of about 5% is used.　A mask (300) comprises: a phase shift film (20) that has an exposure light (wavelength λ) transmittance of 35% and a square contact hole pattern (20a), and that is formed on a mask substrate; and a light-shielding film (30) that is formed on the phase shift film (20) and that has a polygonal aperture pattern (30a) for exposing the phase shift film (20). When the target diameter of a pattern formed using a projection optical system having a numerical aperture NA is 0.45 to 0.52 λ / NA, the length of one side of the contact hole pattern (20a) is 0.71 to 0.82 λ / NA, and the distance between one side of the contact hole pattern (20a) and one side of the polygonal aperture pattern (30a) is 0.48 to 0.64 λ / NA.

The invention relates to the technical field of phase shift mask production, and discloses a phase shift mask capable of preventing light leakage, the mask comprises a plurality of main pattern areas, a scribing channel area and a light leakage protection area, each main pattern area comprises a white area and a pattern area, the scribing channel area comprises a transparent substrate, a partial light transmission layer and a light-proof blocking layer from bottom to top in sequence, and the light leakage protection area comprises a transparent substrate, a partial light transmission layer and a light-proof blocking layer. The light leakage protection area is arranged on the outer layer of the outermost cutting channel of the scribing channel area so as to form light leakage protection on the mask. The invention also provides an application method of the phase shift mask for preventing light leakage. According to the invention, the phase shift mask plate is improved and designed, the light leakage protection areas are introduced, the protection range is expanded on the outer layer of the original peripheral cutting channel, the light leakage protection areas of the adjacent eye mask plates are overlapped so as to complement the original deviation problem, and the edge of the peripheral cutting channel is free from light leakage and light resistance residue during exposure.

The purpose of the present invention is to provide a phase shift mask which can be formed in a shorter time than when a mask having a phase shift film having a transmittance of about 5% is used. A mask (300) is provided with: a phase shift film (20) formed on a mask substrate, the phase shift film (20) having a square contact hole pattern (20a) and having a transmittance of exposure light (wavelength lambda) of 35%; and a light shielding film (30) which is formed on the phase shift film (20) and has a polygonal opening pattern (30a) that exposes the phase shift film (20). When the target diameter of a pattern formed using a projection optical system having a numerical aperture NA is 0.45 [lambda] / NA to 0.52 [lambda] / NA, the length of one side of the contact hole pattern (20a) is 0.71 [lambda] / NA to 0.82 [lambda] / NA, and the distance between one side of the contact hole pattern (20a) and one side of the polygonal opening pattern (30a) is 0.48 [lambda] / NA to 0.64 [lambda] / NA.

There are provided a phase shift mask having a small number of haze defects, that is, a phase shift mask capable of sufficiently suppressing occurrence of haze, and a method for manufacturing the phase shift mask. A phase shift mask (100) according to the present embodiment is a phase shift mask having a circuit pattern by application of exposure light having a wavelength of 200 nm or less, the phase shift mask including a substrate (11), a phase shift film (12) that is formed on the substrate (11) and has a circuit pattern, and a protective film (13) that is formed on an upper surface (12t) and a side surface (12s) of the phase shift film (12), in which the phase shift film (12) enables adjustment of each of phase and transmittance with respect to the exposure light to be transmitted to a predetermined extent, the protective film (13) has a refractive index n in a range of 1.2 or more and 2.6 or less with respect to the exposure light and an attenuation coefficient k in a range of 0.0 or more and 0.4 or less, and in a case where a film thickness of the phase shift film (12) is denoted by d1 and a film thickness of the protective film (13) is denoted by d2, d2 is thinner than d1, and d2 is 15 nm or less.

The present application provides a powder and a preparation method thereof, a target material and a preparation method thereof, a molybdenum-silicon compound film, a mask, and a preparation method of a semiconductor device. The powder preparation method comprises: mixing molybdenum powder and silicon powder according to the atomic ratio of molybdenum to silicon of 1:x to obtain a molybdenum-silicon mixture; and then placing the mixture in a vacuum sintering device for vacuum sintering at 1150°C to 1410°C to obtain MoSi x Block; MoSi x The block is broken to obtain MoSi x The preparation method can produce MoSi with high purity, low oxygen content and small particle size. x Powder, MoSi x The powder can be used to prepare high-purity, low-oxygen, microstructured uniform molybdenum-silicon target materials, which can then deposit dense and uniform molybdenum-silicon compound films, improve the product yield of phase-shift masks, and facilitate the formation of high-contrast, high-resolution development patterns, thereby improving the performance of semiconductor devices.

The present invention provides a phase shift mask blank capable of sufficiently suppressing the occurrence of haze on the mask, a phase shift mask with low haze defects, and a method for manufacturing the phase shift mask. The phase shift mask blank (10) according to the present embodiment is a phase shift mask blank used to produce a phase shift mask to which exposure light of a wavelength of 200 nm or less is applied, and comprises a substrate (11) and a phase shift film (14) formed on the substrate (11), wherein the phase shift film (14) comprises a phase layer (12) that allows a predetermined amount of phase and transmittance to be adjusted for the transmitted exposure light, and a protective layer (13) formed on the phase layer (12) and preventing gas transmission to the phase layer (12), and when the film thickness of the phase layer (12) is denoted as d1 and the film thickness of the protective layer (13) is denoted as d2, the film thickness (d1) of the phase layer (12) is thicker than the film thickness (d2) of the protective layer (13), and the film thickness (d2) of the protective layer (13) is 15 nm or less.

The present disclosure is related to a system and method for expanding the depth of field (DOF) of an optical system. According to an embodiment of the present disclosure, the system for extending a depth of field of an optical system includes: a binary phase mask disposed between first and second lenses of the optical system; and a controller configured to control a binary phase structure formed in the phase shift mask.

To achieve both chemical resistance and shortening of etching time.SOLUTION: A phase shift mask blank having a mask layer that serves as a phase shift mask, and having a phase shift layer laminated on a transparent substrate, wherein the phase shift layer contains molybdenum, silicon, and nitrogen, and the average value of the ratio Si / Mo of the atomic percentage of silicon to the atomic percentage of molybdenum is in the range of 2.2 to 3.2.SELECTED DRAWING: Figure 13

There is provided a phase shift mask for extreme-ultraviolet lithography and a method of manufacturing the phase shift mask. The phase shift mask includes a substrate, a reflective layer, device patterns, a frame pattern, or phase shift patterns. The frame pattern is a pattern that includes alignment holes exposing portions of the reflective layer. The phase shift patterns overlap with the device patterns.

The present application provides a phase shift mask blank having a phase shift film with good phase control and excellent pattern shape obtained by etching using chlorine-oxygen gas. The phase shift mask blank has a transparent substrate, and a phase shift film formed on the transparent substrate, the phase shift film having a phase difference of 160 to 200° at an exposure wavelength of 200 nm or less and a transmittance of 3 to 15%, the phase shift film sequentially comprising a lower layer and an upper layer from the transparent substrate side, the upper layer containing a transition metal, silicon, nitrogen and / or oxygen, or containing silicon, nitrogen and / or oxygen, the lower layer containing chromium, silicon, nitrogen and / or oxygen, the content ratio of silicon being 3% or more and less than 15% relative to the total content of chromium and silicon of the lower layer, the content ratio of oxygen being less than 1.7 relative to the total content of chromium and silicon, and the etching selectivity ratio of the upper layer to the lower layer in dry etching of fluorine type being 10 or more.

Disclosed is a blankmask for EUV lithography, including a reflective film, a capping film, an etch stop film, a phase shift film, and a hard mask film which are sequentially formed on a substrate. The phase shift film contains ruthenium (Ru), and the etch stop film contains chrome (Cr) and niobium (Nb). In the etch stop film, the content of niobium (Nb) ranges from 20 to 50 at %, and the content of chrome (Cr) ranges from 10 to 40 at %. The hard mask film contains tantalum (Ta) and oxygen (O). The content of tantalum (Ta) in the hard mask film is higher than or equal to 50 at %. With the blankmask, it is possible to implement a high resolution and NILS during wafer printing, and implement DtC.

The invention provides a phase shift mask and a manufacturing method of a display device. The phase shift mask with production stability can be obtained by delicately transferring a fine isolated pattern. A phase shift mask provided with a phase shift film having a transfer pattern formed on a translucent substrate, the phase shift mask being characterized in that the transfer pattern is formed from the phase shift film and includes an isolated pattern disposed on the translucent substrate in an isolated manner and an auxiliary opening provided in the isolated pattern, the isolated pattern has a first pattern edge and a second pattern edge facing each other, and a first distance D1 from the first pattern edge to the center of the auxiliary opening and a second distance D2 from the second pattern edge to the center of the auxiliary opening are both 1.0 [mu] m or more and 4.0 [mu] m or less.

To suppress occurrence of surface damage on a transparent substrate and to allow recycling without requiring a polishing step.SOLUTION: A phase-shift mask blank 10B has a mask layer that serves as a phase-shift mask 10, the phase-shift mask blank comprising a phase-shift layer 12 laminated on a transparent substrate 11 and a light-shielding layer 13 laminated on the phase-shift layer, wherein the phase-shift layer comprises a lower phase-shift layer 12a laminated on the transparent substrate and an upper phase-shift layer 12b laminated on the lower phase-shift layer, the lower phase-shift layer and the light-shielding layer being etchable with the same etching solution, and the upper phase-shift layer being etchable with an etching solution different from that for the lower phase-shift layer and the light-shielding layer.SELECTED DRAWING: Figure 1

The invention provides a mask blank and a manufacturing method thereof, and a phase shift mask and a manufacturing method thereof. The mask blank comprises a light-transmitting substrate, an etching cut-off film, a phase shift film, a shading film and a hard mask which are sequentially stacked, materials of the etching cut-off film comprise metal elements and non-metal elements, and the metal elements are selected from one of Cr, Ta, Hf, Zr, Al, W and Ni; the material of the phase shift film comprises a molybdenum-silicon compound and a non-metallic element; the shading film is made of Cr and non-metallic elements; the material of the hard mask comprises silicon or a molybdenum-silicon compound and a non-metallic element; the non-metallic element is selected from one or more of C, O, N, B and P.

A phase shift mask blank includes a phase shift film and a light shielding film formed in contact with the phase shift film and formed of a material containing chromium, wherein the phase shift film is formed of a material containing silicon and free of carbon, the light shielding film is formed of a material containing chromium, oxygen, nitrogen, and carbon, the light shielding film has a laminated structure including four layers: a first layer, a second layer, a third layer, and a fourth layer, the first layer being a layer farthest from the transparent substrate, and the fourth layer being a layer in contact with the phase shift film, and the second layer is a layer containing carbon, and the fourth layer contacting the phase shift film is a layer free of carbon.

A phase shift mask for extreme ultraviolet lithography, comprising: a substrate; a reflective layer on the substrate; a capping layer on the reflective layer; a buffer pattern on the capping layer, the buffer pattern comprising openings exposing a surface of the capping layer; and an absorber pattern on the buffer pattern, the absorber pattern comprising a refractive index less than a refractive index of the buffer pattern and a thickness greater than a thickness of the buffer pattern. The buffer pattern comprises a material having etch selectivity relative to the absorber pattern and the capping layer.

The embodiment of the present application discloses a phase shift mask and a method for detecting slit light uniformity of a photolithography machine. The method comprises: using a first phase shift mask to expose a first test silicon wafer at different focal plane positions according to a preset exposure dose; detecting phase shift errors of each mark pattern at different focal plane positions, fitting a relationship curve between the phase shift errors and the focal plane positions, and obtaining a slope slope'; calculating a vertical intercept b' of a fitting straight line of the exposure dose corresponding to the slope slope of each mark pattern; and finally determining the uniformity of slit illumination according to the dispersion of the vertical intercept b' of each mark pattern. The embodiment of the present application can solve the problem that the existing illumination uniformity measurement can only be measured offline, not only can adapt to complex and variable actual working conditions, but also can quickly judge whether the vertical illumination system needs to be recalibrated, simplify the measurement process, ensure that the machine does not stop, and continue production.