35 results about "Phase-shift mask" patented technology

The invention relates to a phase shift mask layout forming method and device, computer equipment, a storage medium and a computer program product. The method comprises the following steps: acquiring an initial mask layout, wherein the mask layout comprises a main pattern positioned in a light-transmitting area; performing exposure simulation based on the initial mask layout, and obtaining a sidelobe position area where a sidelobe pattern appears; determining a target graph in the main graph according to the side lobe position area; a shading auxiliary pattern is added into the target pattern to update the mask layout, and the size of the shading auxiliary pattern is smaller than the exposure precision. By adopting the method, the sidelobe pattern phenomenon can be improved.

The application provides a phase shift mask and a manufacturing method thereof. In the application, a second key pattern size corresponding to a second photoetching process is obtained, and a second photoetching machine is obtained according to the second key pattern size. The resolution identification ability of the obtained second photoetching machine is matched with the second key pattern size, so that the problem that the resolution ability of the photoetching machine used in the second photoetching process is not enough and the formed phase shift mask is defective is avoided, and the quality of the phase shift mask is improved.

The invention relates to a phase shift mask substrate and a dynamic magnetron sputtering preparation method thereof, a MoSi-based gradient film layer is continuously and dynamically deposited on the substrate, and the method comprises the following steps: carrying out first-stage deposition on the substrate by adopting a molybdenum-silicon alloy target so as to form a transition layer; carrying out second-stage deposition on the transition layer to form a main body functional layer through deposition; and third-stage deposition is carried out on the main body functional layer to form a surface modification layer through deposition, and the MoSi-based gradient film layer is obtained. The invention provides a one-step sputtering deposition method capable of dynamically and accurately regulating and controlling, so that the inherent contradiction between the performance and the stress of a single-layer uniform film is fundamentally solved, and the complexity and the uncertainty of a traditional multi-step process are avoided.

There are provided a phase shift mask having a small number of haze defects, that is, a phase shift mask capable of sufficiently suppressing occurrence of haze, and a method for manufacturing the phase shift mask. A phase shift mask (100) according to the present embodiment includes a substrate (11), a phase shift film (12) that is formed on the substrate (11) and has a circuit pattern, and a protective film (13) that is formed on an upper surface (12t) and a side surface (12s) of the phase shift film (12), in which the phase shift film (12) enables adjustment of each of phase and transmittance with respect to exposure light to be transmitted to a predetermined extent, the protective film (13) contains at least one selected from a tantalum metal, a tantalum compound, a tungsten metal, a tungsten compound, a tellurium metal, or a tellurium compound, and when a film thickness of the phase shift film (12) is denoted by d1 and a film thickness of the protective film (13) is denoted by d2, d2 is thinner than d1, and d2 is 15 nm or less.

The invention relates to a phase shift mask blank and a manufacturing method of a phase shift mask. The phase shift mask blank includes a phase shift film and a light shielding film formed in contact with the phase shift film and formed of a chromium-containing material, in which the phase shift film is formed of a material containing silicon and not containing carbon, the light shielding film is formed of a material containing chromium, oxygen, nitrogen, and carbon, the light shielding film has a laminated structure including four layers: a first layer, a second layer, a third layer, and a fourth layer, the first layer is a layer farthest from the transparent substrate, the fourth layer is a layer in contact with the phase shift film, the second layer is a layer comprising carbon, and the fourth layer in contact with the phase shift film is a layer not comprising carbon.

The purpose of the present invention is to provide a phase shift mask which can be formed in a shorter time than when a mask having a phase shift film having a transmittance of about 5% is used. A mask (300) is provided with: a phase shift film (20) formed on a mask substrate, the phase shift film (20) having a square contact hole pattern (20a) and having a transmittance of exposure light (wavelength lambda) of 35%; and a light shielding film (30) which is formed on the phase shift film (20) and has a polygonal opening pattern (30a) that exposes the phase shift film (20). When the target diameter of a pattern formed using a projection optical system having a numerical aperture NA is 0.45 [lambda] / NA to 0.52 [lambda] / NA, the length of one side of the contact hole pattern (20a) is 0.71 [lambda] / NA to 0.82 [lambda] / NA, and the distance between one side of the contact hole pattern (20a) and one side of the polygonal opening pattern (30a) is 0.48 [lambda] / NA to 0.64 [lambda] / NA.

There is provided a phase shift mask for extreme-ultraviolet lithography and a method of manufacturing the phase shift mask. The phase shift mask includes a substrate, a reflective layer, device patterns, a frame pattern, or phase shift patterns. The frame pattern is a pattern that includes alignment holes exposing portions of the reflective layer. The phase shift patterns overlap with the device patterns.

Disclosed is a blankmask for EUV lithography, including a reflective film, a capping film, an etch stop film, a phase shift film, and a hard mask film which are sequentially formed on a substrate. The phase shift film contains ruthenium (Ru), and the etch stop film contains chrome (Cr) and niobium (Nb). In the etch stop film, the content of niobium (Nb) ranges from 20 to 50 at %, and the content of chrome (Cr) ranges from 10 to 40 at %. The hard mask film contains tantalum (Ta) and oxygen (O). The content of tantalum (Ta) in the hard mask film is higher than or equal to 50 at %. With the blankmask, it is possible to implement a high resolution and NILS during wafer printing, and implement DtC.

The invention provides a phase shift mask and a manufacturing method of a display device. The phase shift mask with production stability can be obtained by delicately transferring a fine isolated pattern. A phase shift mask provided with a phase shift film having a transfer pattern formed on a translucent substrate, the phase shift mask being characterized in that the transfer pattern is formed from the phase shift film and includes an isolated pattern disposed on the translucent substrate in an isolated manner and an auxiliary opening provided in the isolated pattern, the isolated pattern has a first pattern edge and a second pattern edge facing each other, and a first distance D1 from the first pattern edge to the center of the auxiliary opening and a second distance D2 from the second pattern edge to the center of the auxiliary opening are both 1.0 [mu] m or more and 4.0 [mu] m or less.

To suppress occurrence of surface damage on a transparent substrate and to allow recycling without requiring a polishing step.SOLUTION: A phase-shift mask blank 10B has a mask layer that serves as a phase-shift mask 10, the phase-shift mask blank comprising a phase-shift layer 12 laminated on a transparent substrate 11 and a light-shielding layer 13 laminated on the phase-shift layer, wherein the phase-shift layer comprises a lower phase-shift layer 12a laminated on the transparent substrate and an upper phase-shift layer 12b laminated on the lower phase-shift layer, the lower phase-shift layer and the light-shielding layer being etchable with the same etching solution, and the upper phase-shift layer being etchable with an etching solution different from that for the lower phase-shift layer and the light-shielding layer.SELECTED DRAWING: Figure 1

A phase shift mask blank includes a phase shift film and a light shielding film formed in contact with the phase shift film and formed of a material containing chromium, wherein the phase shift film is formed of a material containing silicon and free of carbon, the light shielding film is formed of a material containing chromium, oxygen, nitrogen, and carbon, the light shielding film has a laminated structure including four layers: a first layer, a second layer, a third layer, and a fourth layer, the first layer being a layer farthest from the transparent substrate, and the fourth layer being a layer in contact with the phase shift film, and the second layer is a layer containing carbon, and the fourth layer contacting the phase shift film is a layer free of carbon.

A phase shift mask for extreme ultraviolet lithography, comprising: a substrate; a reflective layer on the substrate; a capping layer on the reflective layer; a buffer pattern on the capping layer, the buffer pattern comprising openings exposing a surface of the capping layer; and an absorber pattern on the buffer pattern, the absorber pattern comprising a refractive index less than a refractive index of the buffer pattern and a thickness greater than a thickness of the buffer pattern. The buffer pattern comprises a material having etch selectivity relative to the absorber pattern and the capping layer.

The embodiment of the present application discloses a phase shift mask and a method for detecting slit light uniformity of a photolithography machine. The method comprises: using a first phase shift mask to expose a first test silicon wafer at different focal plane positions according to a preset exposure dose; detecting phase shift errors of each mark pattern at different focal plane positions, fitting a relationship curve between the phase shift errors and the focal plane positions, and obtaining a slope slope'; calculating a vertical intercept b' of a fitting straight line of the exposure dose corresponding to the slope slope of each mark pattern; and finally determining the uniformity of slit illumination according to the dispersion of the vertical intercept b' of each mark pattern. The embodiment of the present application can solve the problem that the existing illumination uniformity measurement can only be measured offline, not only can adapt to complex and variable actual working conditions, but also can quickly judge whether the vertical illumination system needs to be recalibrated, simplify the measurement process, ensure that the machine does not stop, and continue production.

The invention provides a method for monitoring factory return cleaning abnormity of a photomask and a phase shift mask layout, in the method for monitoring factory return cleaning abnormity of the photomask, a group of BIM (binary intensity mask) patterns and a group of PSM (phase shift mask) patterns are designed on a phase shift mask by utilizing the difference of cleaning strength of materials of a binary intensity mask (BIM) pattern and a phase shift mask (PSM) pattern; taking a cleaning-resistant BIM graph as a reference graph, after returning to a factory for cleaning, exposing the inspection wafer by using the cleaned phase shift mask, and respectively transferring the BIM graph and the PSM graph to the inspection wafer to obtain a second reference graph and a second process graph, and finally, determining whether the factory return cleaning of the photomask is abnormal or not by judging whether the deviation of the critical dimensions of the second reference pattern and the second process pattern is in a preset deviation interval or not. The monitoring method provided by the invention can accurately monitor whether the cleaning of the phase shift photomask is abnormal or not; and the influence of subsequent exposure of the phase shift photomask on the wafer is also actually considered.

The application provides a phase shift mask and a manufacturing method thereof. The phase shift mask comprises: a light-transmitting substrate; a light-blocking layer, which is covered on the light-transmitting substrate to form a light-blocking area, the light-blocking layer is removed and stopped on the area of the surface of the light-transmitting substrate to form a light-transmitting area, the light-blocking layer is removed and the light-transmitting substrate below is partially removed to form a first phase shift area; a phase shift layer, which is covered on the light-transmitting area to form a second phase shift area and covered on the first phase shift area to form a third phase shift area, the phase shift layer makes the exposure light passing through the phase shift layer to produce phase conversion or / and light attenuation. The application can avoid the generation of "ghost line", so that the contrast and resolution of the photoresist pattern obtained by using the phase shift mask for exposure are greatly improved, and on the other hand, the function of the phase shift mask can be effectively widened, so that it can meet the needs of various application scenarios.

The invention relates to a phase shift mask film and a phase shift mask substrate, and the phase shift mask film sequentially comprises a transition layer which is configured to improve the binding force of the substrate and the transition layer and realize initial stress buffering from bottom to top; a bulk functional layer configured to provide phase shift and optical attenuation; and the surface modification layer is configured to counteract residual stress of the main body functional layer. According to the invention, a gradient stress management structure is provided, and high stress concentrated on a single interface in a traditional single-layer film is dispersed into a plurality of sub-layer interfaces with gradually changed components and performance by designing the components from a silicon-rich, stoichiometric ratio and molybdenum-rich continuous gradient layer, so that step-by-step buffering and neutralization of the stress are realized. According to the method, the combined stress can be controlled within + / -100 MPa, the warping of the substrate is obviously reduced, and the strict requirement of a high-end photoetching machine on the mask flatness is met.

The present disclosure relates to a method of processing a phase-shift mask for EUV lithography, comprising: particle beam-induced depositing of a repair material using a precursor gas for repair of an imaging structure of the mask. According to the disclosure, the imaging structure can be repaired in such a way that at least one critical dimension of the mask has a deviation from a predetermined critical dimension of at least below 15%, preferably below 10%, more preferably below 5%, most preferably below 3%.The present disclosure further relates to a phase-shift mask for EUV lithography, to a computer program and to a device.

The present invention provides a phase shift mask blank and a phase shift mask. The phase shift mask blank includes a substrate and a phase shift film thereon, the phase shift film is composed of a material containing silicon and nitrogen and not containing a transition metal, the phase shift film includes at least one composition gradient layer having a composition continuously varying in a thickness direction, and a refractive index n and an extinction coefficient k for an exposure light, which is a KrF excimer laser, vary in the thickness direction, a difference between a maximum refractive index n(H) and a minimum refractive index n(L) of the composition gradient layer is 0.40 or less, and a difference between a maximum extinction coefficient k(H) and a minimum extinction coefficient k(L) is 1.5 or less.

The present invention provides a phase-shift mask substrate alloy target and a manufacturing method therefor. The manufacturing method for a phase-shift mask substrate alloy target comprises the following steps: uniformly mixing high-purity Mo powder and Si powder to obtain Mo-Si mixed powder; adding a carbon-containing material to the Mo-Si mixed powder and uniformly mixing to obtain carbon-containing Mo-Si mixed powder; using an isostatic pressing process to prepare the carbon-containing Mo-Si mixed powder into a preformed body; using a high-temperature sintering process to prepare the preformed body into a phase-shift mask substrate alloy target blank; and welding the phase-shift mask substrate alloy target blank to a backing plate to prepare a phase-shift mask substrate alloy target. The manufacturing method for a phase-shift mask substrate alloy target can improve product stability of the phase-shift mask substrate alloy target, and can effectively solve the technical problems in the prior art of poor film formation quality, high production costs and potential safety hazards in a method for introducing a carbon source into a phase-shift film.

A mask blank comprises: a light-transmissive substrate; and a phase shift film formed on the light-transmissive substrate, in which the phase shift film includes a lower layer containing hafnium and oxygen and an upper layer formed on the lower layer and containing silicon, oxygen, and nitrogen, a total content of hafnium and oxygen in the lower layer is 95 atom % or more, and a content of nitrogen in the upper layer is 15 atom % or more.

A mask blank comprises a transparent substrate and a phase shift film on the transparent substrate. The phase shift film includes a lower layer and an upper layer formed on the lower layer. The upper layer is in contact with the lower layer. The lower layer includes silicon and oxygen. The upper layer includes hafnium and oxygen. The upper layer has a thickness of 5 nm or more. The phase shift film has a thickness of 90 nm or less.

The application relates to a preparation method of a single-mode single-deflection VCSEL chip. First, a specific beveling angle substrate is used for epitaxial growth to introduce controllable material anisotropy; second, a phase shift mask technology is combined with a self-aligned side wall pattern transfer process, subwavelength period high-precision surface grating manufacturing is realized through one or more times of pattern multiplication by using a conventional I-line stepper photolithography machine. The method perfectly integrates the preparation of high-performance gratings into a standard integrated circuit process, realizes single-mode single-deflection VCSEL production with high yield, low cost, large batch and stable polarization characteristics.

A phase-shift mask substrate is provided that, even when the phase-shift film exhibits film thickness fluctuations, it can suppress transmittance fluctuations relative to the representative wavelength of the exposure light, achieving the desired high transmittance and enabling good pattern transfer. The phase-shift mask substrate has a phase-shift film on a transparent substrate. At the representative wavelength of the exposure light, the phase-shift film has a transmittance of 30% or more and 80% or less, an attenuation coefficient k of 0.10 or more and 0.25 or less, a refractive index n of 2.20 or more and 2.57 or less, and the representative wavelength is in the range of 313–436 nm. The representative wavelength, in the relationship between the surface reflectance and wavelength of the phase-shift film, is located between the valley of the surface reflectance on the adjacent short wavelength side and the peak of the surface reflectance on the adjacent long wavelength side. The phase-shift film contains a transition metal and silicon.

To realize drawing of a high-definition pattern while making a beam width smaller.SOLUTION: A drawing apparatus comprises: an optical system 42 which leads light from a light source part 41 onto the surface of a subject along an optical axis J1; a spatial light modulator 46 which is arranged at a first position conjugate with the surface of the subject, and has a plurality of light modulation elements irradiated with light from the light source part 41; a phase shift mask 51 which is arranged at a second position conjugate with the surface of the subject; and a moving mechanism which relatively moves irradiation positions of light beams of the plurality of light modulation elements on the surface of the subject to the surface. The phase shift mask 51 is a member which generates a phase difference between light made incident to the central part in a prescribed direction perpendicular to the optical axis J1 and light made incident to both outer sides of the central part, and restricts the width of a peak of the light beam corresponding to the central part in intensity distribution of the prescribed direction, which is modulated by each light modulation element and irradiated on the surface of the subject, in an irradiation range of light corresponding to each light modulation element.SELECTED DRAWING: Figure 9

Provided is a phase shift mask (100, 200) comprising: a substrate (10); a first semitransparent layer (20); a second semitransparent layer (20); and a light-shielding layer (30), wherein, on the surface of the substrate, a measurement mark is formed having a pattern in which a first region (A1) having the first semitransparent layer disposed therein, a second region (B1) having the surface of the substrate exposed therein, a third region (C) having the light-shielding layer disposed therein, a fourth region (A2) having the second semitransparent layer disposed therein, and a fifth region (B2) having the surface of the substrate exposed therein are provided adjacent to each other along an arrangement direction parallel to the surface of the substrate.

The embodiment of the invention provides a phase shift mask plate and a manufacturing method thereof. The phase shift mask plate comprises a light-transmitting substrate; the mask layer covers the first surface of the light-transmitting substrate; the mask layer is provided with a groove for photoetching a target pattern; the first surface of the light-transmitting substrate is exposed at the groove; wherein the mask layer comprises a shading area and a phase shift area located between the shading area and the groove; the mask layer in the shading area has a first thickness; the mask layer in the phase shift region has a second thickness; the first thickness is greater than the second thickness.

The invention relates to a preparation method of a mask plate, a mask substrate, a binary mask plate and a phase shift mask plate, and the preparation method of the mask plate comprises the following steps: providing the mask substrate which comprises a substrate and a silicon layer located on the substrate; photoresist is arranged on the mask substrate, exposure and development are carried out, patterned photoresist is formed, and part of the silicon layer is exposed; and etching the exposed silicon layer to form a patterned silicon layer, and removing the photoresist to obtain the binary mask. And reacting one part of the patterned silicon layer with nitrogen according to the designed phase shift pattern to generate silicon nitride, forming a phase shift layer, and obtaining the phase shift mask. The preparation method provided by the invention has the advantages of fewer process steps, shortened time, improved productivity and low cost.

To provide a mask blank with which phase shift effect can be enhanced by increasing permeability with respect to exposure light, a film thickness of a phase shift film is reducible, a micropattern is formable, and a phase shift mask having good optical performance is manufacturable.SOLUTION: A mask blank includes a light transmissive substrate and a phase shift film formed on the light transmissive substrate. The phase shift film includes a lower layer containing hafnium and oxygen, and an upper layer that is formed on the lower layer and contains silicon, oxygen, and nitrogen. A total content of hafnium and oxygen in the lower layer is 95 atom% or more. A nitrogen content in the upper layer is 15 atom% or more.SELECTED DRAWING: Figure 1

The present disclosure relates to a phase shift mask for EUV lithography and a manufacturing method of the phase shift mask. A phase shift mask for extreme ultraviolet lithography and a method of manufacturing the phase shift mask are provided. The phase shift mask includes a substrate, a reflective layer, a device pattern, a frame pattern, or a phase shift pattern. The frame pattern is a pattern including an alignment hole exposing a portion of the reflective layer. The phase shift pattern overlaps the device pattern.

There are provided a phase shift mask having a small number of haze defects, that is, a phase shift mask capable of sufficiently suppressing occurrence of haze, and a method for manufacturing the phase shift mask. A phase shift mask (100) according to the present embodiment is a phase shift mask having a circuit pattern by application of exposure light having a wavelength of 200 nm or less, the phase shift mask including a substrate (11), a phase shift film (12) that is formed on the substrate (11) and has a circuit pattern, and a protective film (13) that is formed on an upper surface (12t) and a side surface (12s) of the phase shift film (12), in which the phase shift film (12) enables adjustment of each of phase and transmittance with respect to the exposure light to be transmitted to a predetermined extent, the protective film (13) has a refractive index n in a range of 1.2 or more and 2.6 or less with respect to the exposure light and an attenuation coefficient k in a range of 0.0 or more and 0.4 or less, and in a case where a film thickness of the phase shift film (12) is denoted by d1 and a film thickness of the protective film (13) is denoted by d2, d2 is thinner than d1, and d2 is 15 nm or less.