16 results about "Phase-shift mask" patented technology

The application provides a phase shift mask and a manufacturing method thereof. In the application, a second key pattern size corresponding to a second photoetching process is obtained, and a second photoetching machine is obtained according to the second key pattern size. The resolution identification ability of the obtained second photoetching machine is matched with the second key pattern size, so that the problem that the resolution ability of the photoetching machine used in the second photoetching process is not enough and the formed phase shift mask is defective is avoided, and the quality of the phase shift mask is improved.

The invention relates to a phase shift mask substrate and a dynamic magnetron sputtering preparation method thereof, a MoSi-based gradient film layer is continuously and dynamically deposited on the substrate, and the method comprises the following steps: carrying out first-stage deposition on the substrate by adopting a molybdenum-silicon alloy target so as to form a transition layer; carrying out second-stage deposition on the transition layer to form a main body functional layer through deposition; and third-stage deposition is carried out on the main body functional layer to form a surface modification layer through deposition, and the MoSi-based gradient film layer is obtained. The invention provides a one-step sputtering deposition method capable of dynamically and accurately regulating and controlling, so that the inherent contradiction between the performance and the stress of a single-layer uniform film is fundamentally solved, and the complexity and the uncertainty of a traditional multi-step process are avoided.

There are provided a phase shift mask having a small number of haze defects, that is, a phase shift mask capable of sufficiently suppressing occurrence of haze, and a method for manufacturing the phase shift mask. A phase shift mask (100) according to the present embodiment includes a substrate (11), a phase shift film (12) that is formed on the substrate (11) and has a circuit pattern, and a protective film (13) that is formed on an upper surface (12t) and a side surface (12s) of the phase shift film (12), in which the phase shift film (12) enables adjustment of each of phase and transmittance with respect to exposure light to be transmitted to a predetermined extent, the protective film (13) contains at least one selected from a tantalum metal, a tantalum compound, a tungsten metal, a tungsten compound, a tellurium metal, or a tellurium compound, and when a film thickness of the phase shift film (12) is denoted by d1 and a film thickness of the protective film (13) is denoted by d2, d2 is thinner than d1, and d2 is 15 nm or less.

The invention relates to a phase shift mask blank and a manufacturing method of a phase shift mask. The phase shift mask blank includes a phase shift film and a light shielding film formed in contact with the phase shift film and formed of a chromium-containing material, in which the phase shift film is formed of a material containing silicon and not containing carbon, the light shielding film is formed of a material containing chromium, oxygen, nitrogen, and carbon, the light shielding film has a laminated structure including four layers: a first layer, a second layer, a third layer, and a fourth layer, the first layer is a layer farthest from the transparent substrate, the fourth layer is a layer in contact with the phase shift film, the second layer is a layer comprising carbon, and the fourth layer in contact with the phase shift film is a layer not comprising carbon.

Disclosed is a blankmask for EUV lithography, including a reflective film, a capping film, an etch stop film, a phase shift film, and a hard mask film which are sequentially formed on a substrate. The phase shift film contains ruthenium (Ru), and the etch stop film contains chrome (Cr) and niobium (Nb). In the etch stop film, the content of niobium (Nb) ranges from 20 to 50 at %, and the content of chrome (Cr) ranges from 10 to 40 at %. The hard mask film contains tantalum (Ta) and oxygen (O). The content of tantalum (Ta) in the hard mask film is higher than or equal to 50 at %. With the blankmask, it is possible to implement a high resolution and NILS during wafer printing, and implement DtC.

The invention provides a phase shift mask and a manufacturing method of a display device. The phase shift mask with production stability can be obtained by delicately transferring a fine isolated pattern. A phase shift mask provided with a phase shift film having a transfer pattern formed on a translucent substrate, the phase shift mask being characterized in that the transfer pattern is formed from the phase shift film and includes an isolated pattern disposed on the translucent substrate in an isolated manner and an auxiliary opening provided in the isolated pattern, the isolated pattern has a first pattern edge and a second pattern edge facing each other, and a first distance D1 from the first pattern edge to the center of the auxiliary opening and a second distance D2 from the second pattern edge to the center of the auxiliary opening are both 1.0 [mu] m or more and 4.0 [mu] m or less.

A phase shift mask blank includes a phase shift film and a light shielding film formed in contact with the phase shift film and formed of a material containing chromium, wherein the phase shift film is formed of a material containing silicon and free of carbon, the light shielding film is formed of a material containing chromium, oxygen, nitrogen, and carbon, the light shielding film has a laminated structure including four layers: a first layer, a second layer, a third layer, and a fourth layer, the first layer being a layer farthest from the transparent substrate, and the fourth layer being a layer in contact with the phase shift film, and the second layer is a layer containing carbon, and the fourth layer contacting the phase shift film is a layer free of carbon.

The invention relates to a phase shift mask film and a phase shift mask substrate, and the phase shift mask film sequentially comprises a transition layer which is configured to improve the binding force of the substrate and the transition layer and realize initial stress buffering from bottom to top; a bulk functional layer configured to provide phase shift and optical attenuation; and the surface modification layer is configured to counteract residual stress of the main body functional layer. According to the invention, a gradient stress management structure is provided, and high stress concentrated on a single interface in a traditional single-layer film is dispersed into a plurality of sub-layer interfaces with gradually changed components and performance by designing the components from a silicon-rich, stoichiometric ratio and molybdenum-rich continuous gradient layer, so that step-by-step buffering and neutralization of the stress are realized. According to the method, the combined stress can be controlled within + / -100 MPa, the warping of the substrate is obviously reduced, and the strict requirement of a high-end photoetching machine on the mask flatness is met.

A mask blank comprises a transparent substrate and a phase shift film on the transparent substrate. The phase shift film includes a lower layer and an upper layer formed on the lower layer. The upper layer is in contact with the lower layer. The lower layer includes silicon and oxygen. The upper layer includes hafnium and oxygen. The upper layer has a thickness of 5 nm or more. The phase shift film has a thickness of 90 nm or less.

The application relates to a preparation method of a single-mode single-deflection VCSEL chip. First, a specific beveling angle substrate is used for epitaxial growth to introduce controllable material anisotropy; second, a phase shift mask technology is combined with a self-aligned side wall pattern transfer process, subwavelength period high-precision surface grating manufacturing is realized through one or more times of pattern multiplication by using a conventional I-line stepper photolithography machine. The method perfectly integrates the preparation of high-performance gratings into a standard integrated circuit process, realizes single-mode single-deflection VCSEL production with high yield, low cost, large batch and stable polarization characteristics.

A phase-shift mask substrate is provided that, even when the phase-shift film exhibits film thickness fluctuations, it can suppress transmittance fluctuations relative to the representative wavelength of the exposure light, achieving the desired high transmittance and enabling good pattern transfer. The phase-shift mask substrate has a phase-shift film on a transparent substrate. At the representative wavelength of the exposure light, the phase-shift film has a transmittance of 30% or more and 80% or less, an attenuation coefficient k of 0.10 or more and 0.25 or less, a refractive index n of 2.20 or more and 2.57 or less, and the representative wavelength is in the range of 313–436 nm. The representative wavelength, in the relationship between the surface reflectance and wavelength of the phase-shift film, is located between the valley of the surface reflectance on the adjacent short wavelength side and the peak of the surface reflectance on the adjacent long wavelength side. The phase-shift film contains a transition metal and silicon.

The embodiment of the invention provides a phase shift mask plate and a manufacturing method thereof. The phase shift mask plate comprises a light-transmitting substrate; the mask layer covers the first surface of the light-transmitting substrate; the mask layer is provided with a groove for photoetching a target pattern; the first surface of the light-transmitting substrate is exposed at the groove; wherein the mask layer comprises a shading area and a phase shift area located between the shading area and the groove; the mask layer in the shading area has a first thickness; the mask layer in the phase shift region has a second thickness; the first thickness is greater than the second thickness.

There are provided a phase shift mask having a small number of haze defects, that is, a phase shift mask capable of sufficiently suppressing occurrence of haze, and a method for manufacturing the phase shift mask. A phase shift mask (100) according to the present embodiment is a phase shift mask having a circuit pattern by application of exposure light having a wavelength of 200 nm or less, the phase shift mask including a substrate (11), a phase shift film (12) that is formed on the substrate (11) and has a circuit pattern, and a protective film (13) that is formed on an upper surface (12t) and a side surface (12s) of the phase shift film (12), in which the phase shift film (12) enables adjustment of each of phase and transmittance with respect to the exposure light to be transmitted to a predetermined extent, the protective film (13) has a refractive index n in a range of 1.2 or more and 2.6 or less with respect to the exposure light and an attenuation coefficient k in a range of 0.0 or more and 0.4 or less, and in a case where a film thickness of the phase shift film (12) is denoted by d1 and a film thickness of the protective film (13) is denoted by d2, d2 is thinner than d1, and d2 is 15 nm or less.

To provide a phase shift mask that is advantageously adapted to an exposure environment of a mask for manufacturing a display device, and has excellent transfer resolution of a fine hole pattern.SOLUTION: A phase shift mask 10 comprises a translucent part 11, a phase shift part 12, and a light-shielding part 13 on a translucent substrate 1, where the translucent substrate 1 is exposed in a hole shape in the translucent part 11, the phase shift part 12 is provided so as to surround an outer periphery of the translucent part 11, the light-shielding part 13 is provided so as to surround an outer periphery of the phase shift part 12, the outer periphery of the translucent part 11 is in a square shape having a curve of curvature radius RT at least on one corner part, the outer periphery of the phase shift part 12 is in a square shape at least having a curve of curvature radius RP at a corner part adjacent to the corner part having the curve of curvature radius RT, and the curvature radius RT and the curvature radius RP satisfy a relationship of RT≥RP.SELECTED DRAWING: Figure 1

This application discloses a method for controlling the phase and transmittance uniformity of a phase-shifting mask. The method includes: acquiring spatial light field distribution data of the phase-shifting mask during the exposure process; constructing a corresponding spatial energy flow vector field based on the spatial light field distribution data, and calculating the energy migration direction, energy convergence degree, and energy divergence degree of each region according to the spatial energy flow vector field; constructing a phase gradient continuity model to characterize the spatial continuity of the phase field; identifying local abnormal energy migration regions according to the spatial energy flow vector field, and identifying abrupt phase gradient change regions according to the phase gradient continuity model, and constructing a joint phase and transmittance uniformity control model; generating corresponding uniformity control parameters to coordinately adjust the phase shift layer thickness, local light-transmitting layer material distribution, and mask pattern edge transition structure in the corresponding region of the phase-shifting mask. This application improves high mask performance and lithography yield.