5 results about "Phase-shift mask" patented technology

The application provides a phase shift mask and a manufacturing method thereof. In the application, a second key pattern size corresponding to a second photoetching process is obtained, and a second photoetching machine is obtained according to the second key pattern size. The resolution identification ability of the obtained second photoetching machine is matched with the second key pattern size, so that the problem that the resolution ability of the photoetching machine used in the second photoetching process is not enough and the formed phase shift mask is defective is avoided, and the quality of the phase shift mask is improved.

Disclosed is a blankmask for EUV lithography, including a reflective film, a capping film, an etch stop film, a phase shift film, and a hard mask film which are sequentially formed on a substrate. The phase shift film contains ruthenium (Ru), and the etch stop film contains chrome (Cr) and niobium (Nb). In the etch stop film, the content of niobium (Nb) ranges from 20 to 50 at %, and the content of chrome (Cr) ranges from 10 to 40 at %. The hard mask film contains tantalum (Ta) and oxygen (O). The content of tantalum (Ta) in the hard mask film is higher than or equal to 50 at %. With the blankmask, it is possible to implement a high resolution and NILS during wafer printing, and implement DtC.

The application relates to a preparation method of a single-mode single-deflection VCSEL chip. First, a specific beveling angle substrate is used for epitaxial growth to introduce controllable material anisotropy; second, a phase shift mask technology is combined with a self-aligned side wall pattern transfer process, subwavelength period high-precision surface grating manufacturing is realized through one or more times of pattern multiplication by using a conventional I-line stepper photolithography machine. The method perfectly integrates the preparation of high-performance gratings into a standard integrated circuit process, realizes single-mode single-deflection VCSEL production with high yield, low cost, large batch and stable polarization characteristics.

This application discloses a method for controlling the phase and transmittance uniformity of a phase-shifting mask. The method includes: acquiring spatial light field distribution data of the phase-shifting mask during the exposure process; constructing a corresponding spatial energy flow vector field based on the spatial light field distribution data, and calculating the energy migration direction, energy convergence degree, and energy divergence degree of each region according to the spatial energy flow vector field; constructing a phase gradient continuity model to characterize the spatial continuity of the phase field; identifying local abnormal energy migration regions according to the spatial energy flow vector field, and identifying abrupt phase gradient change regions according to the phase gradient continuity model, and constructing a joint phase and transmittance uniformity control model; generating corresponding uniformity control parameters to coordinately adjust the phase shift layer thickness, local light-transmitting layer material distribution, and mask pattern edge transition structure in the corresponding region of the phase-shifting mask. This application improves high mask performance and lithography yield.

The application provides a mask defect detection method and a detection system, which are suitable for defect detection of three-tone phase shift masks. The defect detection method can accurately apply the gray values of different material layers to the corresponding regions by combining design pattern information to identify material boundaries, so as to more accurately locate the defect positions. Through twice light intensity calculation and gray control, the gray difference between different material layers can be optimized at the same time, the defect detection capability for all material layers is improved, and the defect omission caused by insufficient gray difference is avoided. For defect detection of three-tone masks, the method can not only ensure the defect capture capability of the molybdenum-silicon material layer and the quartz material layer region, but also ensure the defect capture capability of the molybdenum-silicon material layer and the chromium material layer region, so as to maximize the defect capture capability among the three materials, effectively solve the problem of multi-material gray balance, eliminate the blind area of defect detection, and significantly improve the precision of defect detection.