47 results about "Phase-shift mask" patented technology

The invention provides a dry etching method for a molybdenum silicide layer, and relates to the field of semiconductor mask plates. The method is used for performing dry etching pattern transfer on the molybdenum silicide phase shift layer in the phase shift mask. The method comprises the following steps of: 1, putting a patterned molybdenum silicide layer into an ICP (Inductively Coupled Plasma) dry etching machine; 2, mixed SF6 gas and Ar gas are introduced into the etching cavity; and 3, the plasma concentration is regulated and controlled by controlling the ICP source, the plasma bombardment kinetic energy is regulated and controlled through the RF source, and etching of the molybdenum silicide layer is completed. According to the dry etching method, SF6 and Ar are adopted as etching gas, a good etching selection ratio and good morphology can be obtained by controlling the gas proportion, the ICP power and the RF power, and the dry etching method has the advantages of being good in safety, low in production cost and the like.

The invention relates to a phase shift mask layout forming method and device, computer equipment, a storage medium and a computer program product. The method comprises the following steps: acquiring an initial mask layout, wherein the mask layout comprises a main pattern positioned in a light-transmitting area; performing exposure simulation based on the initial mask layout, and obtaining a sidelobe position area where a sidelobe pattern appears; determining a target graph in the main graph according to the side lobe position area; a shading auxiliary pattern is added into the target pattern to update the mask layout, and the size of the shading auxiliary pattern is smaller than the exposure precision. By adopting the method, the sidelobe pattern phenomenon can be improved.

The application provides a phase shift mask and a manufacturing method thereof. In the application, a second key pattern size corresponding to a second photoetching process is obtained, and a second photoetching machine is obtained according to the second key pattern size. The resolution identification ability of the obtained second photoetching machine is matched with the second key pattern size, so that the problem that the resolution ability of the photoetching machine used in the second photoetching process is not enough and the formed phase shift mask is defective is avoided, and the quality of the phase shift mask is improved.

The invention relates to a phase shift mask substrate and a dynamic magnetron sputtering preparation method thereof, a MoSi-based gradient film layer is continuously and dynamically deposited on the substrate, and the method comprises the following steps: carrying out first-stage deposition on the substrate by adopting a molybdenum-silicon alloy target so as to form a transition layer; carrying out second-stage deposition on the transition layer to form a main body functional layer through deposition; and third-stage deposition is carried out on the main body functional layer to form a surface modification layer through deposition, and the MoSi-based gradient film layer is obtained. The invention provides a one-step sputtering deposition method capable of dynamically and accurately regulating and controlling, so that the inherent contradiction between the performance and the stress of a single-layer uniform film is fundamentally solved, and the complexity and the uncertainty of a traditional multi-step process are avoided.

A write pole of a write head of a hard disk drive can be manufactured by forming a photoresist layer over a magnetic material layer located over a substrate, disposing a tri-tone lithographic mask over the photoresist layer, lithographically exposing the photoresist layer through the lithographic mask, developing the photoresist layer to form a patterned photoresist layer, and patterning the magnetic material layer into the write pole by removing portions of the magnetic material layer that are not covered by the photoresist layer. The tri-tone lithographic mask includes a patterned opaque material layer and a patterned partially-transparent material layer located over a transparent substrate. The patterned opaque material layer includes a uniform width region and a flare region. The patterned partially-transparent material layer includes a pair of partially-transparent strips extending adjacent to a respective edge of the patterned opaque material layer, and partially-transparent assist bars.

There are provided a phase shift mask having a small number of haze defects, that is, a phase shift mask capable of sufficiently suppressing occurrence of haze, and a method for manufacturing the phase shift mask. A phase shift mask (100) according to the present embodiment includes a substrate (11), a phase shift film (12) that is formed on the substrate (11) and has a circuit pattern, and a protective film (13) that is formed on an upper surface (12t) and a side surface (12s) of the phase shift film (12), in which the phase shift film (12) enables adjustment of each of phase and transmittance with respect to exposure light to be transmitted to a predetermined extent, the protective film (13) contains at least one selected from a tantalum metal, a tantalum compound, a tungsten metal, a tungsten compound, a tellurium metal, or a tellurium compound, and when a film thickness of the phase shift film (12) is denoted by d1 and a film thickness of the protective film (13) is denoted by d2, d2 is thinner than d1, and d2 is 15 nm or less.

The invention relates to a phase shift mask blank and a manufacturing method of a phase shift mask. The phase shift mask blank includes a phase shift film and a light shielding film formed in contact with the phase shift film and formed of a chromium-containing material, in which the phase shift film is formed of a material containing silicon and not containing carbon, the light shielding film is formed of a material containing chromium, oxygen, nitrogen, and carbon, the light shielding film has a laminated structure including four layers: a first layer, a second layer, a third layer, and a fourth layer, the first layer is a layer farthest from the transparent substrate, the fourth layer is a layer in contact with the phase shift film, the second layer is a layer comprising carbon, and the fourth layer in contact with the phase shift film is a layer not comprising carbon.

The present invention provides a mask blank that can produce patterns with different transmittances with desired accuracy without complicating the mask manufacturing process, and that can achieve a desired phase shift function in each pattern. The mask blank includes a transmittance adjustment film on a phase shift film. The phase shift film creates a phase difference of 150 degrees or more and 210 degrees or less between ArF excimer laser exposure light after passing through the phase shift film and the exposure light after passing through air only at a distance equal to the thickness of the phase shift film. The refractive index of the transmittance adjustment film at the wavelength of the exposure light is set to n U , let the extinction coefficient at the wavelength of exposure light be k U , and set the thickness to d U [nm], the following equations (1) and (2) are satisfied at the same time. U ≤‑17.63×n U 3 +142.0×n U 2 -364.9×n U +315.8 formula (2): d U ≥‑2.805×k U 3 +19.48×k U 2 -43.58×k U +38.11.

The invention relates to the technical field of phase shift mask production, and discloses a phase shift mask capable of preventing light leakage, the mask comprises a plurality of main pattern areas, a scribing channel area and a light leakage protection area, each main pattern area comprises a white area and a pattern area, the scribing channel area comprises a transparent substrate, a partial light transmission layer and a light-proof blocking layer from bottom to top in sequence, and the light leakage protection area comprises a transparent substrate, a partial light transmission layer and a light-proof blocking layer. The light leakage protection area is arranged on the outer layer of the outermost cutting channel of the scribing channel area so as to form light leakage protection on the mask. The invention also provides an application method of the phase shift mask for preventing light leakage. According to the invention, the phase shift mask plate is improved and designed, the light leakage protection areas are introduced, the protection range is expanded on the outer layer of the original peripheral cutting channel, the light leakage protection areas of the adjacent eye mask plates are overlapped so as to complement the original deviation problem, and the edge of the peripheral cutting channel is free from light leakage and light resistance residue during exposure.

The purpose of the present invention is to provide a phase shift mask which can be formed in a shorter time than when a mask having a phase shift film having a transmittance of about 5% is used. A mask (300) is provided with: a phase shift film (20) formed on a mask substrate, the phase shift film (20) having a square contact hole pattern (20a) and having a transmittance of exposure light (wavelength lambda) of 35%; and a light shielding film (30) which is formed on the phase shift film (20) and has a polygonal opening pattern (30a) that exposes the phase shift film (20). When the target diameter of a pattern formed using a projection optical system having a numerical aperture NA is 0.45 [lambda] / NA to 0.52 [lambda] / NA, the length of one side of the contact hole pattern (20a) is 0.71 [lambda] / NA to 0.82 [lambda] / NA, and the distance between one side of the contact hole pattern (20a) and one side of the polygonal opening pattern (30a) is 0.48 [lambda] / NA to 0.64 [lambda] / NA.

The present invention provides a phase shift mask blank capable of sufficiently suppressing the occurrence of haze on the mask, a phase shift mask with low haze defects, and a method for manufacturing the phase shift mask. The phase shift mask blank (10) according to the present embodiment is a phase shift mask blank used to produce a phase shift mask to which exposure light of a wavelength of 200 nm or less is applied, and comprises a substrate (11) and a phase shift film (14) formed on the substrate (11), wherein the phase shift film (14) comprises a phase layer (12) that allows a predetermined amount of phase and transmittance to be adjusted for the transmitted exposure light, and a protective layer (13) formed on the phase layer (12) and preventing gas transmission to the phase layer (12), and when the film thickness of the phase layer (12) is denoted as d1 and the film thickness of the protective layer (13) is denoted as d2, the film thickness (d1) of the phase layer (12) is thicker than the film thickness (d2) of the protective layer (13), and the film thickness (d2) of the protective layer (13) is 15 nm or less.

To achieve both chemical resistance and shortening of etching time.SOLUTION: A phase shift mask blank having a mask layer that serves as a phase shift mask, and having a phase shift layer laminated on a transparent substrate, wherein the phase shift layer contains molybdenum, silicon, and nitrogen, and the average value of the ratio Si / Mo of the atomic percentage of silicon to the atomic percentage of molybdenum is in the range of 2.2 to 3.2.SELECTED DRAWING: Figure 13

There is provided a phase shift mask for extreme-ultraviolet lithography and a method of manufacturing the phase shift mask. The phase shift mask includes a substrate, a reflective layer, device patterns, a frame pattern, or phase shift patterns. The frame pattern is a pattern that includes alignment holes exposing portions of the reflective layer. The phase shift patterns overlap with the device patterns.

The present application provides a phase shift mask blank having a phase shift film with good phase control and excellent pattern shape obtained by etching using chlorine-oxygen gas. The phase shift mask blank has a transparent substrate, and a phase shift film formed on the transparent substrate, the phase shift film having a phase difference of 160 to 200° at an exposure wavelength of 200 nm or less and a transmittance of 3 to 15%, the phase shift film sequentially comprising a lower layer and an upper layer from the transparent substrate side, the upper layer containing a transition metal, silicon, nitrogen and / or oxygen, or containing silicon, nitrogen and / or oxygen, the lower layer containing chromium, silicon, nitrogen and / or oxygen, the content ratio of silicon being 3% or more and less than 15% relative to the total content of chromium and silicon of the lower layer, the content ratio of oxygen being less than 1.7 relative to the total content of chromium and silicon, and the etching selectivity ratio of the upper layer to the lower layer in dry etching of fluorine type being 10 or more.

Disclosed is a blankmask for EUV lithography, including a reflective film, a capping film, an etch stop film, a phase shift film, and a hard mask film which are sequentially formed on a substrate. The phase shift film contains ruthenium (Ru), and the etch stop film contains chrome (Cr) and niobium (Nb). In the etch stop film, the content of niobium (Nb) ranges from 20 to 50 at %, and the content of chrome (Cr) ranges from 10 to 40 at %. The hard mask film contains tantalum (Ta) and oxygen (O). The content of tantalum (Ta) in the hard mask film is higher than or equal to 50 at %. With the blankmask, it is possible to implement a high resolution and NILS during wafer printing, and implement DtC.

The invention provides a phase shift mask and a manufacturing method of a display device. The phase shift mask with production stability can be obtained by delicately transferring a fine isolated pattern. A phase shift mask provided with a phase shift film having a transfer pattern formed on a translucent substrate, the phase shift mask being characterized in that the transfer pattern is formed from the phase shift film and includes an isolated pattern disposed on the translucent substrate in an isolated manner and an auxiliary opening provided in the isolated pattern, the isolated pattern has a first pattern edge and a second pattern edge facing each other, and a first distance D1 from the first pattern edge to the center of the auxiliary opening and a second distance D2 from the second pattern edge to the center of the auxiliary opening are both 1.0 [mu] m or more and 4.0 [mu] m or less.

To suppress occurrence of surface damage on a transparent substrate and to allow recycling without requiring a polishing step.SOLUTION: A phase-shift mask blank 10B has a mask layer that serves as a phase-shift mask 10, the phase-shift mask blank comprising a phase-shift layer 12 laminated on a transparent substrate 11 and a light-shielding layer 13 laminated on the phase-shift layer, wherein the phase-shift layer comprises a lower phase-shift layer 12a laminated on the transparent substrate and an upper phase-shift layer 12b laminated on the lower phase-shift layer, the lower phase-shift layer and the light-shielding layer being etchable with the same etching solution, and the upper phase-shift layer being etchable with an etching solution different from that for the lower phase-shift layer and the light-shielding layer.SELECTED DRAWING: Figure 1

A phase shift mask blank includes a phase shift film and a light shielding film formed in contact with the phase shift film and formed of a material containing chromium, wherein the phase shift film is formed of a material containing silicon and free of carbon, the light shielding film is formed of a material containing chromium, oxygen, nitrogen, and carbon, the light shielding film has a laminated structure including four layers: a first layer, a second layer, a third layer, and a fourth layer, the first layer being a layer farthest from the transparent substrate, and the fourth layer being a layer in contact with the phase shift film, and the second layer is a layer containing carbon, and the fourth layer contacting the phase shift film is a layer free of carbon.

A phase shift mask for extreme ultraviolet lithography, comprising: a substrate; a reflective layer on the substrate; a capping layer on the reflective layer; a buffer pattern on the capping layer, the buffer pattern comprising openings exposing a surface of the capping layer; and an absorber pattern on the buffer pattern, the absorber pattern comprising a refractive index less than a refractive index of the buffer pattern and a thickness greater than a thickness of the buffer pattern. The buffer pattern comprises a material having etch selectivity relative to the absorber pattern and the capping layer.

The embodiment of the present application discloses a phase shift mask and a method for detecting slit light uniformity of a photolithography machine. The method comprises: using a first phase shift mask to expose a first test silicon wafer at different focal plane positions according to a preset exposure dose; detecting phase shift errors of each mark pattern at different focal plane positions, fitting a relationship curve between the phase shift errors and the focal plane positions, and obtaining a slope slope'; calculating a vertical intercept b' of a fitting straight line of the exposure dose corresponding to the slope slope of each mark pattern; and finally determining the uniformity of slit illumination according to the dispersion of the vertical intercept b' of each mark pattern. The embodiment of the present application can solve the problem that the existing illumination uniformity measurement can only be measured offline, not only can adapt to complex and variable actual working conditions, but also can quickly judge whether the vertical illumination system needs to be recalibrated, simplify the measurement process, ensure that the machine does not stop, and continue production.

The invention provides a method for monitoring factory return cleaning abnormity of a photomask and a phase shift mask layout, in the method for monitoring factory return cleaning abnormity of the photomask, a group of BIM (binary intensity mask) patterns and a group of PSM (phase shift mask) patterns are designed on a phase shift mask by utilizing the difference of cleaning strength of materials of a binary intensity mask (BIM) pattern and a phase shift mask (PSM) pattern; taking a cleaning-resistant BIM graph as a reference graph, after returning to a factory for cleaning, exposing the inspection wafer by using the cleaned phase shift mask, and respectively transferring the BIM graph and the PSM graph to the inspection wafer to obtain a second reference graph and a second process graph, and finally, determining whether the factory return cleaning of the photomask is abnormal or not by judging whether the deviation of the critical dimensions of the second reference pattern and the second process pattern is in a preset deviation interval or not. The monitoring method provided by the invention can accurately monitor whether the cleaning of the phase shift photomask is abnormal or not; and the influence of subsequent exposure of the phase shift photomask on the wafer is also actually considered.

The application provides a phase shift mask and a manufacturing method thereof. The phase shift mask comprises: a light-transmitting substrate; a light-blocking layer, which is covered on the light-transmitting substrate to form a light-blocking area, the light-blocking layer is removed and stopped on the area of the surface of the light-transmitting substrate to form a light-transmitting area, the light-blocking layer is removed and the light-transmitting substrate below is partially removed to form a first phase shift area; a phase shift layer, which is covered on the light-transmitting area to form a second phase shift area and covered on the first phase shift area to form a third phase shift area, the phase shift layer makes the exposure light passing through the phase shift layer to produce phase conversion or / and light attenuation. The application can avoid the generation of "ghost line", so that the contrast and resolution of the photoresist pattern obtained by using the phase shift mask for exposure are greatly improved, and on the other hand, the function of the phase shift mask can be effectively widened, so that it can meet the needs of various application scenarios.

The invention discloses a phase shift mask structure and a forming method thereof, and a photomask pattern. The phase shift mask structure comprises a substrate; the main pattern and the exposure auxiliary pattern are located on the substrate; the main pattern and the exposure auxiliary pattern are arranged on the substrate side by side; the size of the main pattern is larger than that of the exposure auxiliary pattern; wherein the exposure auxiliary pattern comprises a first metal layer, a first separation layer and a second metal layer which are sequentially located on the substrate; wherein the first metal layer and the second metal layer are made of the same metal material, a first adhesive force exists between the first metal layer and the substrate, a second adhesive force exists between the first metal layer and the first spacer layer, and a third adhesive force exists between the first spacer layer and the second metal layer; the second adhesive force and the third adhesive force are both smaller than the first adhesive force. The stability of the exposure auxiliary pattern is improved, and the quality of the photomask pattern formed based on the phase shift mask structure is improved.

The invention relates to a phase shift mask film and a phase shift mask substrate, and the phase shift mask film sequentially comprises a transition layer which is configured to improve the binding force of the substrate and the transition layer and realize initial stress buffering from bottom to top; a bulk functional layer configured to provide phase shift and optical attenuation; and the surface modification layer is configured to counteract residual stress of the main body functional layer. According to the invention, a gradient stress management structure is provided, and high stress concentrated on a single interface in a traditional single-layer film is dispersed into a plurality of sub-layer interfaces with gradually changed components and performance by designing the components from a silicon-rich, stoichiometric ratio and molybdenum-rich continuous gradient layer, so that step-by-step buffering and neutralization of the stress are realized. According to the method, the combined stress can be controlled within + / -100 MPa, the warping of the substrate is obviously reduced, and the strict requirement of a high-end photoetching machine on the mask flatness is met.

The invention relates to a phase shift mask blank, a method for manufacturing the phase shift mask blank, a phase shift mask, and a method for manufacturing the phase shift mask. The phase shift mask blank of the present invention is a phase shift mask blank having a mask layer serving as a phase shift mask. The phase shift mask blank has a transparent substrate and a phase shift layer. The phase shift layer is laminated on the transparent substrate. The phase shift layer is made of metal silicide. The phase shift layer includes nitrogen, molybdenum, and silicon. The average value of the ratio Si / Mo of the composition ratio (atm%) of silicon to the composition ratio (atm%) of molybdenum is in the range of 2.2-3.2.

The present disclosure relates to a method of processing a phase-shift mask for EUV lithography, comprising: particle beam-induced depositing of a repair material using a precursor gas for repair of an imaging structure of the mask. According to the disclosure, the imaging structure can be repaired in such a way that at least one critical dimension of the mask has a deviation from a predetermined critical dimension of at least below 15%, preferably below 10%, more preferably below 5%, most preferably below 3%.The present disclosure further relates to a phase-shift mask for EUV lithography, to a computer program and to a device.

The present invention provides a phase shift mask blank and a phase shift mask. The phase shift mask blank includes a substrate and a phase shift film thereon, the phase shift film is composed of a material containing silicon and nitrogen and not containing a transition metal, the phase shift film includes at least one composition gradient layer having a composition continuously varying in a thickness direction, and a refractive index n and an extinction coefficient k for an exposure light, which is a KrF excimer laser, vary in the thickness direction, a difference between a maximum refractive index n(H) and a minimum refractive index n(L) of the composition gradient layer is 0.40 or less, and a difference between a maximum extinction coefficient k(H) and a minimum extinction coefficient k(L) is 1.5 or less.

The present invention provides a phase-shift mask substrate alloy target and a manufacturing method therefor. The manufacturing method for a phase-shift mask substrate alloy target comprises the following steps: uniformly mixing high-purity Mo powder and Si powder to obtain Mo-Si mixed powder; adding a carbon-containing material to the Mo-Si mixed powder and uniformly mixing to obtain carbon-containing Mo-Si mixed powder; using an isostatic pressing process to prepare the carbon-containing Mo-Si mixed powder into a preformed body; using a high-temperature sintering process to prepare the preformed body into a phase-shift mask substrate alloy target blank; and welding the phase-shift mask substrate alloy target blank to a backing plate to prepare a phase-shift mask substrate alloy target. The manufacturing method for a phase-shift mask substrate alloy target can improve product stability of the phase-shift mask substrate alloy target, and can effectively solve the technical problems in the prior art of poor film formation quality, high production costs and potential safety hazards in a method for introducing a carbon source into a phase-shift film.

A mask blank comprises: a light-transmissive substrate; and a phase shift film formed on the light-transmissive substrate, in which the phase shift film includes a lower layer containing hafnium and oxygen and an upper layer formed on the lower layer and containing silicon, oxygen, and nitrogen, a total content of hafnium and oxygen in the lower layer is 95 atom % or more, and a content of nitrogen in the upper layer is 15 atom % or more.

The purpose of the present invention is to achieve drawing of a high-definition pattern by reducing a beam width in a drawing device.　This drawing device comprises: an optical system (42) that guides light from a light source unit (41) onto a substrate (9) along an optical axis; a spatial light modulator (46) that is disposed at a first position conjugate to the surface of the substrate (9) and has a plurality of light modulation elements to be irradiated with light from the light source unit (41); a phase shift mask (51) that is disposed at a second position conjugate to the surface of the substrate (9); and a movement mechanism that moves the laser beam irradiation positions of the plurality of light modulation elements relative to the surface. The phase shift mask (51) is provided with a member that causes a phase difference between light incident on a central part in a predetermined direction perpendicular to the optical axis and light incident on both outer sides of the central part in a light irradiation region corresponding to each of the optical modulation elements, and limits the beam width of the light beam that is modulated by each of the optical modulation elements and applied to the surface of the substrate (9).