84 results about "Proximity effect correction" patented technology

The invention provides an optical proximity correction method and system based on mask error model optimization, and a terminal, and the method comprises the steps: building a data sample set containing a plurality of process conditions through obtaining a large amount of mask manufacturing data under a specific photoetching process; and based on the sample set, constructing a physical optical sub-model and a machine learning sub-model to form a mask error model for outputting a final mask key size value. And then, according to a plurality of preset alternative weight coefficient combinations, reconstructing an objective function which introduces a mask error term, calculating corresponding objective function values, and correcting the photoetching pattern by using an OPC algorithm corresponding to each objective function value to obtain performance index data so as to determine an optimal weight coefficient combination. And finally, optimizing the OPC algorithm by using the target function of the optimal combination, thereby realizing the accurate correction of the photoetching pattern, and improving the precision and yield of semiconductor manufacturing. According to the method, the mask error model comprehensively considering physical optics and machine learning is established, and the OPC process is introduced, so that the influence of the mask error can be predicted and compensated more accurately, the critical dimension deviation and the like are reduced, and the device performance and the yield are improved. The method can adapt to different process conditions, and parameters and weight coefficients can be dynamically adjusted. And moreover, rework can be reduced, automatic adjustment is realized through closed-loop feedback control, the production stability and efficiency are improved, and the cost is reduced.

The invention provides an optical proximity effect correction method and system, a terminal and a medium, and the method comprises the steps: obtaining a plurality of initial parameter combinations of a photoetching mask design pattern, so as to form an initial population; wherein each initial individual in the initial population corresponds to a group of initial parameter combinations; determining a plurality of optimization indexes of the photoetching mask design graph, and determining an optical proximity effect correction function based on the plurality of optimization indexes and constraint conditions; and based on the optical proximity effect correction function, obtaining an optimal parameter combination of the photoetching mask design pattern in the iteration process of the initial population. According to the invention, the optimization algorithm is innovatively introduced into the field of optical proximity effect correction, comprehensive optical proximity effect correction is realized by introducing a plurality of optimization indexes, the manufacturing requirement of a high-precision silicon optical chip is effectively met, and the performance of the silicon optical chip is effectively improved.

The embodiment of the invention provides a method and equipment for determining an edge position error and a storage medium. The method includes determining a degree of signal variation of a lithographic simulation signal for a control point in a mask pattern at a current position of the lithographic simulation pattern; updating the position of the control point in the photoetching simulation pattern according to the signal change degree of the photoetching simulation signal of the control point at the current position so as to determine the target position of the control point; and determining an edge position error of the control point based on the difference between the initial position and the target position of the control point. In this way, the efficiency of determining the edge position error can be improved, and then the efficiency of optical proximity effect correction is improved.

The invention belongs to the technical field of photoetching, and particularly relates to an optical proximity effect correction method and system considering grid dependence. Through the first correction rule base in the OPC standard configuration base, position iteration correction is carried out on the first to-be-corrected mask pattern in the to-be-corrected layout file, preliminary OPC of the first to-be-corrected mask pattern is achieved, and the OPC efficiency of the to-be-corrected mask pattern is improved under the condition that the GD error influence is considered subsequently; through a second correction rule base obtained through optimization of the first correction mask pattern, moving a second to-be-corrected mask pattern for multiple times according to the target mask pattern moving mode, and calculating light intensity distribution of the second to-be-corrected mask pattern after each time of movement, therefore, the mask movement amount of the second to-be-corrected mask pattern can be obtained by using the average light intensity distribution of the second to-be-corrected mask pattern, and the influence of GD on the OPC process of the second to-be-corrected mask pattern can be effectively reduced.

The invention provides a processing method of a metal layer layout, and belongs to the technical field of semiconductor manufacturing, and the method comprises the steps: obtaining the metal layer layout and a through hole layer layout corresponding to the metal layer layout; extracting a first process hot spot pattern in the metal layer layout and a background pattern within a preset range around the first process hot spot pattern according to a first preset rule; carrying out edge shrinkage processing on a convex angle edge on the convex angle pattern at a first preset displacement to obtain a pre-processing layout; performing optical proximity effect correction processing on the preprocessed layout to obtain a corrected layout of the metal layer layout; and performing simulation processing on the corrected layout according to a second preset rule to obtain a simulation image. According to the optical proximity correction method, the process hot spot of the convex angle pattern during exposure can be eliminated under a small-size process window, and the defect that the OPC technology is difficult to fully correct the small-feature-size pattern is overcome.

The invention provides a correction method of an optical proximity correction model and a data acquisition method, which are applied to the technical field of semiconductors. The correction method and the data acquisition method both comprise the following steps: determining a first simulation value of a critical dimension of a test pattern set under initial information of a photoetching condition and a second simulation value of the critical dimension of the test pattern set under adjustment information of the photoetching condition; classifying the plurality of test patterns; different data acquisition modes are adopted for the classified test patterns, and the actual measurement values of the critical dimensions are recollected; through a mode of combining formula calculation and actual exposure, while the accuracy of data acquisition in the modeling process of the optical proximity effect correction model is ensured, the calculation amount of partial actual data acquisition is simplified by utilizing formula calculation, so that the purposes of reducing the labor cost and improving the modeling efficiency are achieved.

The invention provides an optical proximity effect correction method, which comprises the following steps of: selecting an original layout layer comprising a target pattern layer and a hole layer, and searching an abnormal edge in the target pattern layer according to a position relationship between the target pattern layer and the hole layer; moving the abnormal edge by a first set distance in a direction perpendicular to the abnormal edge and away from the target pattern layer; moving each edge in the target pattern layer by a second set distance in a direction perpendicular to the edge and close to the target pattern layer to obtain an OPC (Optical Proximity Correction) target pattern layer; and carrying out iteration on the OPC correction target graph layer. According to the method, welt holes can be reduced, the problem of incomplete hole wrapping caused by global movement of the target pattern layer during process deviation is solved, meanwhile, the problem of incomplete hole wrapping caused when the holes are located at corners or line ends is also solved, and therefore the stability and the electrical property of products are improved.

The application relates to a metal line and via layout optical proximity effect correction method and related equipment, which comprises the following steps: obtaining an original metal line and via layout, wherein the direction perpendicular to the extension direction of the interconnection metal line in the plane of the interconnection metal line layer is the width direction, the metal line adjacent to the interconnection metal line in the width direction in the metal line layer is an influence metal line, the influence metal line comprises an influence metal line segment, and the influence metal line segment is a projection area line segment of a connecting via on the influence metal line in the width direction; performing hole expansion processing on each connecting via in the width direction to form an expanded connecting via; translating each influence metal line segment in the width direction in a direction away from the interconnection metal line by a certain distance to form a pretreated metal line and via layout; performing optical proximity correction on the pretreated metal line and via layout to obtain a corrected metal line and via layout, so that the photolithography process window can be increased, and the metal line is not prone to defects such as bridging.

The invention provides an optical proximity effect correction optimization method comprising the following steps: providing an initial layout, dividing the initial layout into a plurality of small blocks, each small block comprising a main pattern area and an expansion area surrounding the main pattern area, each small cell block is overlapped with the expansion area of the adjacent small cell block; oPC correction and simulation verification are carried out on each small block, and a problem graph and a plurality of suspected weapon graphs appear in an overlapping area between two adjacent small blocks in a simulation verification graph; finding out a target lethal graph causing the problem graph from all the suspected lethal graphs; optimizing the target lethal graphs in all the small blocks to obtain an intermediate layout; and performing OPC correction on the intermediate layout so as to greatly reduce the EPE at the edge of the small area and solve the problem that the verification result of the OPC correction is not convergent.

Disclosed herein is a proximity effect correction method based on shape adjustment for fabricating an imaging structure. The imaging structure comprises a bottom layer arranged on a substrate, and a top layer arranged on the upper surface of the bottom layer. The position of a surrounding frame of the top layer is closed to an edge of the bottom layer, which has a width value and a space value between the top and bottom layers. Additionally, the method combines with the use of increased particle beam sizes to improve the throughput, imaging fidelity and contrast of a particle beam lithography system. The method is applicable to any particle beam lithography machine or system, and does not require any internal hardware and software modifications to the machine or system.

Embodiments of this disclosure provide a method, apparatus, and storage medium for electron beam exposure correction. The method includes: determining a first dose distribution for electron beam exposure by performing electron beam proximity effect correction on a target pattern based on a predetermined dose distribution, the first dose distribution indicating a set of dose adjustment values ​​for compensating for scattering effects during electron beam exposure on the target pattern; determining a second dose distribution for electron beam exposure by performing electron beam haze effect correction on the target pattern based on the first dose distribution, the second dose distribution indicating a set of dose adjustment values ​​for compensating for haze effects during electron beam exposure on the target pattern; and determining a target dose distribution for electron beam exposure by performing electron beam proximity effect correction on the target pattern based on the first and second dose distributions.

The invention provides a semiconductor layout processing method and a related product. The method comprises the following steps: acquiring a correction target edge on a semiconductor layout; breaking the corrected target edge for the first time according to a preset length, and performing optical proximity effect correction on the corrected target edge for the first time to obtain a preliminary optimized edge corresponding to the corrected target edge; obtaining a target line segment from the preliminary optimization edge according to the distance between the preliminary optimization edge and the corrected target edge; determining a breaking position on the corrected target edge according to the target line segment and the process limit length; the process limited length is greater than the preset length; and carrying out secondary breaking on the correction target edge according to the breaking position, and carrying out secondary optical proximity effect correction on the correction target edge. According to the scheme, the result difference caused by operation of different engineers is eliminated, any graphic scenes such as corners, ends and straight line segments can be covered in a self-adaptive mode, and the optimization result meeting mask rule inspection is rapidly output.

Provided is a process proximity effect correction method capable of efficiently improving the dispersion of patterns. There is a process proximity effect correction method according to some embodiments, the process proximity effect correction method of a process proximity effect correction device for performing process proximity effect correction (PPC) of a plurality of patterns using a machine learning module executed by a processor, comprising: training a sensitivity model by inputting a layout image of the plurality of patterns and a layout critical dimension (CD) of the plurality of patterns into the machine learning module; estimating an after cleaning inspection critical dimension (ACI-CD) sensitivity prediction value of the plurality of patterns by inferring an ACI-CD prediction value of the plurality of patterns; and determining a correction rate of the layout CD of the plurality of patterns using the estimated sensitivity prediction value.

The invention relates to a photomask layout correction method and system, equipment and a storage medium. The photomask layout correction method comprises the following steps: acquiring a curve type photomask optical correction layout; carrying out Manhattan processing on the curve type photomask optical correction layout, and obtaining a Manhattan optimization layout based on a photoetching model; performing electron beam proximity effect correction on the Manhattan optimization layout to obtain an electron beam correction layout, and obtaining a photomask layout based on the electron beam correction layout; obtaining the contour difference between the photomask layout and the curve-type photomask optical correction layout; and correcting the Manhattan optimization layout according to the contour difference until the contour difference between the photomask layout and the curve type photomask optical correction layout is not greater than a reference threshold value, and outputting the Manhattan optimization layout. The method is used for reducing photomask manufacturing time and manufacturing difficulty of Manhattan of the curve type photomask layout, and meanwhile, the photoetching imaging quality of the Manhattan layout on the wafer is reserved to the maximum extent.

The present application belongs to the field of micro-nano processing and X-ray optical testing technology, and particularly relates to a high-resolution test card in hard X-ray band and a preparation method thereof. The test card adopts electron beam lithography combined with proximity effect correction technology to prepare an HSQ template pattern, forms a Siemens star structure with a minimum line width of 10 nm and a height of 500 nm, and then covers a metal working layer on the template surface through atomic layer deposition technology. The HSQ template pattern has a duty cycle less than 1, effectively improving the aspect ratio of the pattern. The covering of the metal working layer doubles the line density of the final pattern. The present application breaks through the resolution limit of the traditional test card, solves the problem of preparation of high-aspect-ratio nano structures, and has simple and reliable process, and is suitable for resolution calibration of absorption contrast and phase contrast imaging systems in hard X-ray band, thereby providing key technical support for performance evaluation of high-end X-ray optical systems.

The present application provides an OPC correction method, which defines a feature pattern according to the OPC publishing experience of product layout; adopts a special segmentation method for the segmentation of specific edges of the feature pattern; corrects the feature pattern based on a conventional OPC correction method, adjusts the target pattern in advance according to the difference between the simulation value and the target value, and carries out subsequent OPC processing based on the adjusted target pattern. The present application defines a feature pattern, carries out special segmentation for the specified edges of the feature pattern, obtains the difference between the simulation value and the target value after OPC, and compensates the difference in the original target pattern, so as to realize reasonable optical proximity effect correction of the feature pattern, match the simulation value and the target value of the feature pattern after OPC, meet the process requirements, and improve the yield of products.

This invention provides a drawing method for raster beam drawing that can shorten the drawing time without affecting the drawing accuracy. [Solution] The method includes: a step of calculating a normalized proximity effect correction irradiation dose to correct for the proximity effect when drawing a sample; a step of determining whether the proximity effect correction irradiation dose is greater than a threshold for each of several sub-regions in which the drawing area of ​​the sample is divided into a mesh; a step of calculating a ghost irradiation dose for the sub-regions in which the irradiation dose is greater than the threshold as a result of the determination; and a step of drawing the irradiation unit regions for which the proximity effect correction irradiation dose is greater than the threshold with an incident irradiation dose that is the sum of the irradiation dose based on a limiting correction irradiation dose that is limited from the calculated proximity effect correction irradiation dose and the ghost irradiation dose, for each of several irradiation unit regions for which the beam is irradiated in which the drawing area is divided into a mesh; and drawing the irradiation unit regions in which the proximity effect correction irradiation dose is less than or equal to the threshold with a beam that is the irradiation dose based on the calculated proximity effect correction irradiation dose without ghost exposure.

The invention belongs to the technical field of micro-nano machining, and particularly relates to a method for preparing a high-resolution EUV optical element through electron beam lithography. The method comprises the following steps: etching an optical element by using an electron beam lithography system, and introducing a region proximity effect correction strategy; the method comprises the following specific steps: preparing a silicon nitride film as a substrate, and spin-coating HSQ photoresist on the silicon nitride film; carrying out geometric region division on the to-be-exposed optical component graphic layout; at least dividing a central region, an edge region and a corner region; utilizing Monte Carlo simulation software to establish a function relationship between the graphic position and the required exposure dose so as to determine an independent exposure reference dose of each geometric region; an independent and compensated exposure reference dose is set for each geometric region based on dose deviation data obtained by simulation. According to the method, the pattern uniformity can be remarkably improved, and reliable preparation of a large-area and large-aspect-ratio nano structure is realized.

The invention discloses an optical correction model and an acquisition method thereof, and a mask pattern correction method, and the mask pattern correction method comprises the steps: providing a to-be-corrected layout which comprises a first to-be-corrected pattern and a second to-be-corrected pattern; providing an optical correction model; performing first optical proximity effect correction on the first to-be-corrected graph by adopting a first correction model to obtain a first corrected graph; performing second optical proximity effect correction on the second to-be-corrected graph by adopting a second correction model to obtain a second corrected graph; a correction layout is obtained, the correction layout comprises a first correction graph and a second correction graph, the first correction graph is in one-to-one correspondence with the first to-be-corrected graph, and the second correction graph is in one-to-one correspondence with the second to-be-corrected graph. According to the correction method, the correction result accuracy of optical proximity correction can be improved, so that the size precision of the semiconductor structure is improved.

According to example embodiments of the present disclosure, methods, devices and storage media for determining edge placement error are provided. The method includes determining a degree of signal variation of a lithography simulation signal for a control point in a mask pattern at a current position of a lithography simulation pattern; updating a position of the control point in the lithography simulation pattern according to the degree of signal variation of the lithography simulation signal for the control point at the current position to determine a target position of the control point; and determining an edge placement error of the control point based on a difference between an initial position of the control point and the target position of the control point. In this way, the efficiency of determining edge placement error can be improved, and thus the efficiency of optical proximity correction can be improved.

The present application relates to the field of optical proximity correction, in particular to a model-based optical proximity effect correction optimization method, device and equipment. By performing mask rule check on a layout to be adjusted according to a preset MRC rule, a suspicious edge is determined; exposure simulation is performed on a main pattern corresponding to the suspicious edge to obtain an exposure pattern; a to-be-checked edge placement error between the exposure pattern and a target pattern corresponding to the main pattern is determined; when the to-be-checked edge placement error exceeds a permissible edge placement error, the suspicious edge is determined as a to-be-adjusted edge; under the condition of eliminating the limitation of the MRC rule and the limitation of the position of a corresponding resolution auxiliary pattern, position optimization is performed on the to-be-adjusted edge; according to the theoretical movement value, a first movement value of the to-be-adjusted edge moving to the outside of the main pattern and a second movement value are determined. The present application improves the correction effect of MBOPC.

An optical proximity effect correction method and a photomask are disclosed. The method includes: acquiring an initial photomask pattern; dividing the edges of the initial photomask pattern into multiple segments, wherein the initial photomask pattern includes at least a first edge and a second edge, the first edge being divided into multiple first segments by multiple first cutting points, and the second edge being divided into multiple second segments by multiple second cutting points; adjusting the multiple segments along a second direction; determining whether there are target first cutting points and target second cutting points among the first and second cutting points that satisfy preset conditions, wherein the preset conditions are 0 < d ≤ a, d is the distance component between the first and second cutting points along the first direction, and a is a preset threshold; if target first cutting points and target second cutting points exist, adjusting their positions along the first direction so that they no longer satisfy the preset conditions. This invention can prevent the spacing between cutting points in the photomask pattern from being less than the minimum exposure size.

A raster beam writing method includes: calculating a ghost dose for ghost exposure for a small region having a proximity effect-corrected dose larger than the threshold value as a result of a determination; and for a plurality of irradiation unit regions to be irradiated with a charged particle beam obtained by dividing the writing region of the target object in a mesh shape, writing an irradiation unit region having a proximity effect-corrected dose larger than the threshold value with a charged particle beam having an incident dose obtained by adding the ghost dose to a dose based on a limited corrected dose more limited than a calculated proximity effect-corrected dose, and writing an irradiation unit region having a proximity effect-corrected dose not larger than the threshold value with a charged particle beam having an incident dose based on the calculated proximity effect-corrected dose without ghost exposure.

The present disclosure provides a contact hole layout correction method based on pattern environment fitting, comprising: randomly determining at least one pattern region in the contact hole layout; performing optical proximity effect correction on the at least one pattern region based on a super-resolution lithography model, while obtaining actual boundary movement amount of the contact hole pattern in the at least one pattern region; fitting the relationship between the pattern environment characteristics of the contact hole pattern and the actual boundary movement amount in the at least one pattern region, taking minimizing the error between the actual boundary movement amount and the predicted boundary movement amount as the fitting target, to obtain the fitting relationship between the pattern environment of the contact hole pattern and the boundary movement amount; determining the predicted boundary movement amount of the contact hole pattern in the pattern region other than the at least one pattern region in the contact hole layout by using the fitting relationship, correcting the boundary of the corresponding contact hole pattern in the pattern region other than the at least one pattern region based on the predicted boundary movement amount, and outputting the optimized contact hole layout.

The application discloses a layout pattern processing method, device, equipment, medium and product, and belongs to the technical field of pattern processing. The method comprises the following steps: acquiring a first layout pattern, the first layout pattern being a pattern processed by an optical proximity effect correction algorithm, wherein the edges of the first layout pattern comprise a plurality of non-variable edges and a plurality of variable edges, and each non-variable edge is connected between two adjacent variable edges; performing a merging operation on the edges in the first layout pattern, converting the plurality of non-variable edges into a plurality of new variable edges, and obtaining a second layout pattern; and performing optimization on at least part of the edges in the second layout pattern, and obtaining a third layout pattern. By converting the non-variable edges in the first layout pattern into variable edges, and then optimizing the second layout pattern comprising the plurality of new variable edges to obtain the third layout pattern, the quality of the pattern after real exposure of the third layout pattern can be improved.

The application provides an optical proximity effect correction method and system and a mask, the method comprising: obtaining a plurality of test patterns and setting a predetermined iteration number of each test pattern; dividing the plurality of test patterns into a training set and a test set; establishing an iteration number model based on a machine learning algorithm and the training set; inputting the test set into the iteration number model to obtain a test iteration number of each test pattern in the test set, and comparing the test iteration number of each test pattern with the corresponding predetermined iteration number; determining whether the iteration number model is a trained iteration number model according to a comparison result; inputting a layout file to be processed into the trained iteration number model to obtain a target iteration number corresponding to different original design patterns included in the layout file; and correcting the original design patterns included in the layout file based on the target iteration number corresponding to the different original design patterns to obtain corrected patterns.

The invention relates to a photomask layout correction method and system, equipment, a storage medium and a program product. The photomask layout correction method comprises the following steps: acquiring a curve type photomask optical correction layout; performing Manhattan treatment on the photomask optical correction layout to obtain a Manhattan correction layout; performing electron beam proximity effect correction on the Manhattan correction layout to obtain an electron beam correction layout; carrying out photoetching imaging verification on the electron beam correction layout; judging whether a verification result of the photoetching imaging verification meets a preset condition or not; if yes, outputting a Manhattan correction layout; and if not, carrying out edge movement iterative optimization on the Manhattan correction layout until a verification result of photoetching imaging verification of the electron beam correction layout corresponding to the Manhattan correction layout meets a preset condition. The method and the device are used for improving the Manhattan level of the curve type photomask layout so as to improve the imaging quality of the curve type photomask layout to the greatest extent.

The invention provides an optical proximity effect correction method and an optical proximity effect correction device, which can perform optical proximity effect correction processing with high resolution and high efficiency. The optical proximity effect correction method comprises the following steps: acquiring a to-be-processed layout image in a first format; preprocessing the layout image in the first format to obtain a layout image in a second format; inputting the layout image in the second format into a trained Brownian bridge diffusion model, performing optical proximity effect correction processing to generate an optimized mask image in the second format, the Brownian bridge diffusion model being trained to learn optical proximity effect correction processing from a layout domain to a mask domain, establishing mapping from a layout domain to a mask domain based on a Brownian bridge process; and post-processing the optimized mask image in the second format to obtain an optimized mask image in the first format.

The invention discloses a correction method of an optical proximity correction model, a storage medium and a terminal. The correction method comprises the following steps: providing an initial optical proximity correction model; based on wafer measurement data under different photoetching conditions, acquiring an initial constraint relation of linear correlation between the light beam focusing parameter and the metering plane parameter; providing a periodic component representing periodic correlation between the beam focusing parameter and the metering plane parameter, wherein the periodic component comprises a plurality of Fourier expansion terms; and fitting the light beam focusing parameter and the metering plane parameter based on the initial constraint relation and the Fourier expansion item to obtain a constraint relation between the light beam focusing parameter and the metering plane parameter. According to the correction method, the constraint relation between the light beam focusing parameter and the metering plane parameter can be accurately and quickly fitted, so that the model error of the obtained optical proximity effect correction model is reduced.

A method for preparing a sample for manufacturing a superconducting quantum circuit comprising a Josephson junction, said sample comprising a substrate layer covered by an undercut resist layer and a top resist layer, said method comprising: - providing an undercut resist layer made from an electron-beam-lithography (EBL)-insensitive selectively soluble material, - providing a top resist layer made from a positive-EBL-sensitive material on top of said undercut resist layer, - receiving (200) a superconducting quantum circuit pattern comprising a Josephson junction, - determining (210) a corrected pattern by applying a 2D Proximity Effect Correction to said superconducting quantum circuit pattern, - projecting (220) at least 50 kV electron beam on the top resist layer modulated according to said corrected pattern, - developing (230) the top resist layer, - developing (240) the undercut resist layer.