9 results about "Proximity effect correction" patented technology

Embodiments of this disclosure provide a method, apparatus, and storage medium for electron beam exposure correction. The method includes: determining a first dose distribution for electron beam exposure by performing electron beam proximity effect correction on a target pattern based on a predetermined dose distribution, the first dose distribution indicating a set of dose adjustment values ​​for compensating for scattering effects during electron beam exposure on the target pattern; determining a second dose distribution for electron beam exposure by performing electron beam haze effect correction on the target pattern based on the first dose distribution, the second dose distribution indicating a set of dose adjustment values ​​for compensating for haze effects during electron beam exposure on the target pattern; and determining a target dose distribution for electron beam exposure by performing electron beam proximity effect correction on the target pattern based on the first and second dose distributions.

The present application belongs to the field of micro-nano processing and X-ray optical testing technology, and particularly relates to a high-resolution test card in hard X-ray band and a preparation method thereof. The test card adopts electron beam lithography combined with proximity effect correction technology to prepare an HSQ template pattern, forms a Siemens star structure with a minimum line width of 10 nm and a height of 500 nm, and then covers a metal working layer on the template surface through atomic layer deposition technology. The HSQ template pattern has a duty cycle less than 1, effectively improving the aspect ratio of the pattern. The covering of the metal working layer doubles the line density of the final pattern. The present application breaks through the resolution limit of the traditional test card, solves the problem of preparation of high-aspect-ratio nano structures, and has simple and reliable process, and is suitable for resolution calibration of absorption contrast and phase contrast imaging systems in hard X-ray band, thereby providing key technical support for performance evaluation of high-end X-ray optical systems.

A method for preparing a sample for manufacturing a superconducting quantum circuit comprising a Josephson junction, said sample comprising a substrate layer covered by an undercut resist layer and a top resist layer, said method comprising: - providing an undercut resist layer made from an electron-beam-lithography (EBL)-insensitive selectively soluble material, - providing a top resist layer made from a positive-EBL-sensitive material on top of said undercut resist layer, - receiving (200) a superconducting quantum circuit pattern comprising a Josephson junction, - determining (210) a corrected pattern by applying a 2D Proximity Effect Correction to said superconducting quantum circuit pattern, - projecting (220) at least 50 kV electron beam on the top resist layer modulated according to said corrected pattern, - developing (230) the top resist layer, - developing (240) the undercut resist layer.

This application provides a correction method and data acquisition method for an optical proximity effect correction model, applicable to the semiconductor technology field. Both the correction method and data acquisition method include: determining the first simulated value of the critical dimensions of the test pattern set under initial information of photolithography conditions, and the second simulated value of the critical dimensions of the test pattern set under adjusted information of photolithography conditions; classifying multiple test patterns; and then re-collecting the actual measured values ​​of the critical dimensions for each classified test pattern using different data acquisition methods. By combining formula calculation and actual exposure, the accuracy of data acquisition during the optical proximity effect correction model modeling process is ensured, while formula calculation simplifies the computational workload of some actual data acquisition, thereby reducing labor costs and improving modeling efficiency.

This disclosure provides a photomask, a method for fabricating a photomask pattern, and a patterning method. The photomask includes a pattern area, a boundary area, and a correction area. The boundary area is located outside the pattern area, and the correction area is located between the pattern area and the boundary area. The pattern area and the correction area are regions on the photomask where optical proximity effect correction is performed. The photomask includes a first side and a second side opposite to each other in a first direction. The width of the correction area on the first side is less than the sum of the widths of the correction area and the boundary area on the second side, and the width of the correction area on the second side is less than the sum of the widths of the correction area and the boundary area on the first side. This method avoids pattern overlap when performing multiple photomasks.

This application discloses a method and product for determining an optical proximity effect correction model, relating to the field of optical proximity effect correction technology. The method for determining the optical proximity effect correction model includes: grouping the graphics in the initial layout according to their geometric features to obtain at least one graphic group; determining the basic offset of each graphic group based on the correspondence between preset parameter value ranges and graphic manufacturing deviations; scaling each basic offset according to multiple preset magnifications to obtain a target offset set corresponding to each preset magnification; the target offset set includes the target offsets of each graphic group at the preset magnification; moving the target edges of the graphics in the initial layout based on each target offset in each target offset set to obtain candidate layouts corresponding to each target offset set; and performing OPC modeling based on each candidate layout to determine the OPC model.

The application discloses an ESD structure polycrystalline silicon layer OPC correction method, which can reduce the probability of EPI being pierced by M0A, and comprises the following steps: step 1, finding out target patterns with high risk of EPI being pierced by M0A in an ESD structure from an original photolithography layout; step 2, judging the feasibility and linkage range of size adjustment of the polycrystalline silicon layer, and confirming other photolithography layers without linkage modification of the polycrystalline silicon layer; step 3, analyzing the spacing parameters of M0A and the polycrystalline silicon layer according to a TEM picture of the ESD structure, and determining the specific adjustment size of the polycrystalline silicon layer; and step 4, performing model-based optical proximity effect correction on the target patterns after size adjustment, and completing the edge compensation operation of the polycrystalline silicon layer. The application can reduce the risk of EPI being pierced by M0A through a small amount of mask adjustment.

This application provides a method and apparatus for correcting photolithographic patterns. The method includes: obtaining a corrected photolithographic pattern after optical proximity correction of an original photolithographic pattern; determining an initial optimization range based on the corrected photolithographic pattern; performing optical proximity correction iterations on the photolithographic pattern within the initial optimization range to obtain an optimized photolithographic pattern; and checking the corrected photolithographic pattern including the optimized photolithographic pattern. If the pattern meets preset requirements, the correction process ends. The technical solution provided by this application avoids processing the complete corrected photolithographic pattern when further correcting it, thereby reducing the computational load and significantly saving time in correcting the original photolithographic pattern.

The application provides a one-dimensional pattern optical proximity correction method, a storage medium and an electronic device. The method comprises establishing a model error table of one-dimensional patterns of various sizes in various spatial environments, wherein the model error table is obtained from a numerical compensation table and a model compensation table, the numerical compensation table is obtained from rule-based optical proximity effect correction of one-dimensional patterns of various sizes in various spatial environments, and the model compensation table is obtained from model-based optical proximity effect correction of one-dimensional patterns of various sizes in various spatial environments; rule-based optical proximity effect correction is performed on the one-dimensional pattern, and then model-based optical proximity effect correction is performed, wherein the rule comprises the numerical compensation table, and the model comprises the model error table as a correction parameter. The application can be used for optimizing optical proximity correction of one-dimensional patterns.