38 results about "Pattern size" patented technology

The invention relates to a photomask data processing method and device, equipment, a medium and a program product. The method comprises the following steps: acquiring current photomask design data; processing the current photomask design data to obtain pattern density information and pattern size information of each target area; a thermodynamic diagram used for representing the defect degree of each target area is generated; obtaining a target area with a defect degree greater than or equal to a defect threshold value, and determining defect classification of the target area based on pattern density information and pattern size information of the target area; when the defect classification comprises pattern density classification, obtaining a target area of a target area, when the target area is greater than an area threshold value, performing functional area identification on the target area, extracting a key signal path in the functional area, determining a splitting boundary based on the functional area and the key signal path, and designing data of a current photomask based on the splitting boundary, and adjusting. By adopting the method, the photomask design data can be optimized in advance.

The invention relates to the field of integrated circuit manufacturing, in particular to a mask process correction method, device and equipment and a storage medium. Inputting the target mask pattern as an initial electron beam exposure pattern into a pre-trained mask top and bottom surface process correction model; determining a mask layer bottom simulation pattern size and a mask layer top simulation pattern size corresponding to each edge section in the simulation electron beam exposure pattern to obtain a corresponding side wall included angle; according to the size of the simulation pattern at the bottom of the mask layer, determining a size-included angle comparison data set corresponding to each edge section to obtain an included angle offset; further determining a target size offset; and adjusting the position of a corresponding edge section in the simulation pattern at the bottom of the mask layer according to the target size offset. The similarity between a wafer pattern obtained by carrying out a photoetching process on the mask layer corrected by the method and a photoetching target pattern is greatly improved.

The invention relates to a manufacturing method for a structural layer in a large-area structure, and the method comprises the steps: for a target structural layer which needs to be prepared through patterning in the large-area structure comprising at least one structural layer, firstly preparing a first material layer above the currently prepared structural layer or substrate of the large-area structure, and then coating a first photoresist; transferring the pattern of the first mask to the first photoresist, etching the exposed first redundant part of the first material layer to obtain a second material layer, removing the residual first photoresist, and performing inter-photoetching cleaning for the currently prepared structure; coating a second photoresist on the upper part of the currently prepared structure; after the pattern of the second mask is transferred to the second photoresist, the exposed redundant material layer is etched, and the remaining second photoresist is removed to obtain a target structure layer; the pattern of the second mask is the same as that of the first mask, and the pattern size is larger than that of the first mask. And the pattern precision of the target structure layer is improved.

The present application relates to the field of clothing design, and provides a universal pattern making method of golden ratio armhole, which obtains the data of bust by actual measurement data of human body or by query of clothing size standard GBT1335, so as to satisfy pattern making of different individual body types and improve the universality of pattern making. The frame bust value can be calculated by the human body bust data measured or queried, in combination with the loose coefficient, waist-in value and adjustment value of the clothing size. Then, the clothing bust and back width can be calculated by the difference between the clothing loose value and the difference between the human body back width and the human body bust, and the six opening surface design of the clothing, the equal adjustment of each opening surface piece and the difference between the clothing back width and the clothing bust, and finally the armhole width value is obtained, and the corresponding armhole depth value and sleeve width value can be obtained according to the armhole depth threshold value and the sleeve width threshold value, so as to determine the clothing pattern size, satisfy the body types of different individuals or groups, and have high design universality.

The application provides a phase shift mask and a manufacturing method thereof. In the application, a second key pattern size corresponding to a second photoetching process is obtained, and a second photoetching machine is obtained according to the second key pattern size. The resolution identification ability of the obtained second photoetching machine is matched with the second key pattern size, so that the problem that the resolution ability of the photoetching machine used in the second photoetching process is not enough and the formed phase shift mask is defective is avoided, and the quality of the phase shift mask is improved.

The application provides a two-dimensional nanometer patterning substrate and a preparation method. A graphene film is prepared on a supporting substrate; a metal film is deposited on the graphene film; the metal film is converted into discontinuous metal nanoparticles; the graphene pattern is etched by using the metal nanoparticles as a mask; the metal nanoparticle mask on the graphene pattern is removed; and a nitride material is grown on the graphene pattern. Compared with existing electron beam exposure, nano-imprinting and nano-sphere mask schemes, the two-dimensional nanometer patterning substrate and the preparation method are simple and feasible, and the cost can be effectively controlled. In addition, the two-dimensional nanometer patterning substrate and the preparation method are suitable for large-size and batch construction, and the above technical details are suitable for the advantages. Finally, the nanometer pattern size and other geometric parameters have high flexibility, which is important for promoting subsequent lateral epitaxy of high-quality nitride materials.

The invention discloses a micro-nano pattern processing method, which comprises the following steps of: 1, pretreating a pattern electrode and a base material, preparing the pattern electrode matched with the outline of a micro-nano pattern to be processed, performing surface activation treatment, and performing cleaning and modification treatment on the base material; step two, functional material selection and pretreatment: selecting at least two functional materials, and performing dispersion and filtration treatment to form a stable functional material dispersion system; the method has the beneficial effects that synchronous loading of multiple functional materials is achieved through the electrostatic adsorption principle, multi-material micro-nano patterns can be prepared through one-time machining, and compared with a traditional step-by-step machining method, the machining efficiency is improved, and the machining period is remarkably shortened; the precise transfer device and the visual positioning module are adopted, precise alignment of a preformed pattern and a base material is achieved, the pattern size precision can reach the nanoscale, and the problem that in traditional multi-material machining, the alignment precision is low is solved.

The present application relates to the field of integrated circuit manufacturing, and particularly relates to a mask process correction method, device, equipment and storage medium, wherein a target mask pattern and a corresponding design thickness are received; the target mask pattern is input as an initial electron beam exposure pattern into a pre-trained mask top and bottom surface process correction model; mask layer bottom simulation pattern sizes and mask layer top simulation pattern sizes corresponding to each edge section in the simulation electron beam exposure pattern are determined, to obtain corresponding side wall included angles; size-included angle comparison data groups corresponding to each edge section are determined according to the mask layer bottom simulation pattern sizes, to obtain included angle offset amounts; a target size offset amount is further determined; and the positions of the corresponding edge sections in the mask layer bottom simulation pattern are adjusted according to the target size offset amount. The similarity between the wafer pattern obtained by performing a photolithography process on the mask layer corrected by the present application and the photolithography target pattern is greatly improved.

The utility model discloses a measuring tool for drawing design, which relates to the technical field of mechanical drawing and comprises a measuring scale, an open hole is arranged in the measuring scale, a pointer for displaying a measuring result is arranged on a ruler scale which is arranged on the surface of the measuring scale, and an inspection mechanism for inspecting whether a drawing is flat or not is arranged at the measuring position of the measuring scale. An adjusting structure for adjusting the pointer is arranged in the measuring scale, whether the second laser has deviation or not is judged by starting the second laser and the third laser, whether a drawing is flat or not is judged by observing rays emitted by the second laser, and errors of a measuring result caused by uneven surface of the drawing are avoided. Rays of the first laser and the fourth laser are tangent to the circular pattern, the measuring end of the measuring scale is adjusted to be tangent to the circular pattern, the size of the circular pattern can be directly obtained, the measurement application range is increased, a measurement result is obtained by observing the position of the pointer on the scale, and errors of the observation result caused by light refraction are avoided.

The invention discloses a method for selectively regulating and controlling the size of a pattern through a low-temperature ion implantation process, and belongs to the technical field of integrated circuit manufacturing. Performing low-temperature ion implantation on the intermediate material to generate a modified layer on the vertical side wall of the non-hollow part of the intermediate film layer; selective growth is carried out through atomic layer deposition, a deposition layer covering the surface of the intermediate material is formed, the deposition layer forms an adjusted pattern structure, and the profile of the adjusted pattern structure is reduced relative to that of the intermediate pattern structure; part of the deposition layer is removed through wet etching, so that the upper part of the bottom film layer is exposed; performing thermal annealing treatment; and transferring the adjusted pattern structure to the bottom film layer through dry etching. According to the invention, the feature size of the pattern structure can be accurately controlled and reduced, the side wall of the pattern structure can obtain a flatter surface appearance without defects, and the performance of a semiconductor device can be improved.

A pattern size compensation method and system, device, storage medium and computer program product, the method comprising: providing a design layout of a plurality of chip units, the design layout comprising a plurality of design patterns, the plurality of chip units forming an exposure unit, the exposure unit being an exposure area divided on a wafer; obtaining the pattern density distribution condition of each chip unit by taking the whole design patterns of the plurality of chip units in the exposure unit as a calculation reference; and according to the pattern density distribution condition of the chip unit, performing pattern size compensation on the design pattern of the chip unit to obtain a compensation pattern. According to the invention, accurate graph size compensation can be realized.

This invention provides a method and system for measuring the size of a lens pattern. [Solution] The method includes the steps of: using a printing module to form a lens including a pattern; using a camera module to acquire a lens image of the lens including the pattern, wherein the lens image includes a pattern image portion corresponding to the pattern; providing an annular mask unit on the lens image, wherein the annular mask unit covers the pattern image portion; and using an image analysis unit to perform at least one of steps (a) and (b), wherein step (a) is the step of determining an inner circle on the pattern image portion and calculating the diameter of the inner circle, and step (b) is the step of determining an outer circle on the pattern image portion and calculating the diameter of the outer circle, wherein the image analysis unit is connected to the camera module.

The invention provides an exposure control method and device of a photoetching machine, equipment and a storage medium, and relates to the technical field of semiconductor manufacturing. The method comprises the following steps: before exposure is started, controlling a preheating device to heat a photomask of a photoetching machine, so that the photomask reaches a maximum deformation value after being heated; transferring the heated photomask into a photoetching machine, and exposing the test wafer by adopting the heated photomask according to preset exposure parameters; obtaining a pattern size deviation between an exposure pattern on the test wafer and a preset pattern of the photomask; adjusting a preset exposure parameter according to the pattern size deviation; and in the exposure process, exposing the wafer to be processed by adopting the heated photomask according to the adjusted exposure parameters. The invention ensures that the dimensional deviation between the wafer exposure pattern and the photomask preset pattern is stable and controllable, improves the process stability, and does not need to pause to wait for the photomask to cool in continuous exposure, thereby shortening the exposure time of each wafer and improving the productivity of a photoetching machine.

The invention provides an auxiliary graph adding method and system and a layout, and belongs to the field of semiconductors. The auxiliary graph adding method comprises the following steps: providing a layout, dividing the layout into a plurality of areas, adding a second auxiliary graph on one side, far away from the main graph, of the first auxiliary graph, and adjusting parameters of the second auxiliary graph until the graph density of the target area is within a target threshold range, the minimum distance between the second auxiliary graph and the main graph meets a set value. According to the invention, the second auxiliary pattern is added, and the minimum distance between the second auxiliary pattern and the main pattern meets the set value, so that the second auxiliary pattern cannot be imaged and does not influence the key size of the main pattern, thereby reducing the load effect, avoiding the influence on the pattern size uniformity, and improving the problem of non-uniform pattern density in the layout. Especially for a low-density graph area in the layout, the light transmittance distribution of the area is ensured to be uniform, and the problem of non-uniform imaging is reduced.

This invention provides a reflective mask blank for manufacturing reflective masks that can keep changes in pattern dimensions within an acceptable range even when subjected to repeated heating and cooling treatments on the mask, such as mask washing and exposure during the mask manufacturing process and use. [Solution] The invention comprises a substrate, a multilayer reflective film formed on the substrate, and an absorber film formed on the multilayer reflective film. The absorber film includes a first layer having a structure such that the diffraction angle 2θin of the highest intensity peak obtained by analysis using X-ray diffraction with an in-plane method is less than or equal to the diffraction angle 2θout of the highest intensity peak obtained by analysis using X-ray diffraction with an out-of-plane method.

The invention provides a wafer processing method and device, equipment and a storage medium, and relates to the technical field of semiconductor manufacturing. The wafer processing method comprises the following steps: acquiring machine state data of an etching machine; determining a to-be-operated target etching reaction chamber and a to-be-operated target photoetching machine based on the machine state data; determining a target compensation parameter from a plurality of preset compensation parameters according to the target etching reaction cavity and the target photoetching machine; receiving a wafer to be processed; the target photoetching machine is adopted to conduct photoetching processing on the wafer to be processed, and the target compensation parameters are used for conducting reverse compensation on the graph size of a device to be formed on the wafer to be processed in the photoetching process; and carrying out etching treatment on the photoetched wafer by adopting the target etching reaction cavity to obtain an etched wafer. According to the method, the target compensation parameter is determined from the plurality of preset compensation parameters, so that accurate reverse compensation can be carried out aiming at the condition of non-uniform circuit size caused by the target etching reaction cavity, and the circuit size in the etched wafer is ensured to be uniform.

The invention discloses a graph size measurement method and system, equipment, a storage medium and a computer program product. The method comprises the following steps: acquiring a plurality of target graph structures; obtaining a measurement image of an area where each target graph structure is located, wherein the measurement image comprises a measurement graph corresponding to the target graph structure; obtaining target sizes of the plurality of target graphic structures; selecting partial measurement patterns representing the pattern features of the plurality of target pattern structures as a plurality of anchor point patterns; obtaining the measurement size of the anchor point graph; aligning the measurement size with the target size to obtain the measurement deviation of the anchor point pattern; and performing measurement compensation on the measurement pattern in the measurement image according to the measurement deviation to obtain the pattern size of the measurement pattern. According to the invention, accurate graph dimension measurement can be realized.

The invention discloses an embroidery machine and a control method thereof. An embroidery frame of the embroidery machine is used for fixing embroidery cloth to be embroidered; the projector is located above the tabouret, and the distance between a lens of the projector and the tabouret is equal to the focal length of the projector; the controller is used for acquiring embroidery pattern data, synthesizing the embroidery pattern data into a pattern image, and controlling the projector to project the pattern image onto the embroidery cloth, so that the pattern size of the pattern image projected onto the embroidery cloth is the same as the actual size of the embroidery pattern data. The distance between the lens of the projector and the tabouret is set as the focal length, so that the definition of the pattern image on the embroidery cloth can be ensured; the controller performs projection according to the pattern image, so that the pattern image projected on the embroidery cloth is the same as the actual embroidery effect, an operator can directly and accurately position the embroidery position through the pattern image, the pattern positioning accuracy in the plate making process is improved, the material waste caused by repeated debugging is reduced, and the typesetting efficiency of the embroidery machine is remarkably improved.

This application relates to a method, apparatus, device, medium, and program product for photomask data processing. The method includes: acquiring current photomask design data; processing the current photomask design data to obtain pattern density information and pattern size information for each target region; generating a heat map characterizing the defect degree of each target region; acquiring target regions with defect degrees greater than or equal to a defect threshold; determining defect classification for the target regions based on the pattern density information and pattern size information; when the defect classification includes pattern density classification, acquiring the target area of ​​the target region; when the target area is greater than an area threshold, identifying functional regions of the target region and extracting key signal paths within the functional regions; determining splitting boundaries based on the functional regions and key signal paths; and adjusting the current photomask design data based on the splitting boundaries. This method allows for pre-optimization of the photomask design data.

The surface treatment method of the semiconductor substrate of the present invention is a treatment method for treating a main surface of a semiconductor substrate having a pattern formation region in which a pattern is formed on the main surface of the substrate and a bevel region formed on the periphery of the pattern formation region, the pattern having a concavo-convex structure with a pattern size of 30 nm or less, the method comprising a surface treatment step of bringing a surface treatment agent composition containing a silylating agent into contact with the pattern formation region and the bevel region of the main surface of the semiconductor substrate, the surface of the silicon dioxide substrate treated by bringing the surface treatment agent composition into contact having an IPA receding angle of 3° or more at room temperature of 25 degrees and / or a water receding angle of 40° or more at room temperature of 25 degrees.

The application discloses a method for adding scattering bars in OPC correction, comprising the following steps: step one, adding a first type of scattering bar in a layout; step two, selecting a hotspot area in the layout which will cause the first type of scattering bar to form an image; step three, in the hotspot area, setting a second type of scattering bar close to the adjacent pattern boundary on the other side of the first type of scattering bar, the second type of scattering bar being opposite to the first type of scattering bar, and adjusting the width of the second type of scattering bar and the distance from the adjacent pattern boundary to eliminate the image of the first type of scattering bar. The application can keep the scattering bar in the hotspot area where the scattering bar image is easy to form and avoid the scattering bar image, without changing the pattern size.

The invention discloses a printing white edge adjusting method and equipment which are applied to the printing white edge adjusting equipment, the printing white edge adjusting equipment comprises a screen printing plate arranged in an adjustable screen frame assembly, and at least one motor is arranged in each of different directions of the adjustable screen frame assembly. The method comprises the steps that the actual measurement size of a current to-be-printed product, the reference position on a screen printing plate and the target white edge size are obtained; calculating the size of a target graph according to the actual measurement size and the size of the target white edge, and obtaining the size of an initial effective graph according to the reference position; obtaining an initial size deviation value according to the size of the target graph and the size of the initial effective graph; the initial size deviation value is converted into a motor displacement instruction through a pre-calibrated displacement-size-tension relation, and the reference position is adjusted according to the motor displacement instruction; and the size of an optimized graph formed at the adjusted reference position is obtained, secondary optimization is conducted till the residual deviation value is smaller than a preset deviation threshold value, the screen size adjusting precision is improved, and the problem of printing white edges is solved.

The present application provides a method and system for measuring a contact lens pattern size. The method for measuring a contact lens pattern size comprises: providing a lens having a pattern; capturing the lens having the pattern using a camera module to generate a lens image, wherein the lens image comprises a pattern image portion corresponding to the pattern; setting a ring mask unit on the lens image, wherein the ring mask unit covers the pattern image portion; using an image analysis unit to perform at least one of steps (a) and (b): (a) determining an inscribed circle of the pattern image portion and calculating a diameter of the inscribed circle, (b) determining a circumscribed circle of the pattern image portion and calculating a diameter of the circumscribed circle, wherein the image analysis unit is coupled to the camera module.

This disclosure provides a display device including a display panel with pixels and an optical improvement layer on the display panel. The optical improvement layer includes a first pattern layer and a second pattern layer that overlap each other. The first pattern layer has a first refractive index, and the second pattern layer has a second refractive index different from the first refractive index. The first pattern layer has an average pattern size larger than that of the second pattern layer, and the average pattern ratio of the patterns included in the first pattern layer is less than the average pattern ratio of the patterns included in the second pattern layer. Furthermore, another embodiment of this disclosure provides an optical improvement layer.

Discussed is a display apparatus including a display panel having pixels, and an optical improvement layer on the display panel. The optical improvement layer includes a first pattern layer and a second pattern layer overlapping each other. The first pattern layer has a first refractive index, the second pattern layer has a second refractive index different from that of the first refractive index, the first pattern layer has an average pattern size greater than that of the second pattern layer, and an average of pattern ratios of patterns included in the first pattern layer is smaller than an average of pattern ratios of patterns included in the second pattern layer.

A layout modification method, a storage medium and a terminal, the method comprising: providing an initial layout, including a plurality of first type patterns and a plurality of second type patterns, the first type patterns being parallel to a first direction, the second type patterns penetrating the first type patterns along a second direction, the initial layout including a plurality of pattern areas and non-pattern areas, the first type patterns being located in the pattern areas; allocating the plurality of first type patterns to at least one first layout, the first layout including a plurality of first patterns; obtaining a target pattern area from the initial layout or the first layout, the target pattern area including a preset number of first type patterns or a preset number of first patterns; generating a preset number of sacrifice patterns and cutting patterns on both sides of the target pattern area along the second direction, the sacrifice patterns being parallel to the first type patterns, the cutting patterns being parallel to the first type patterns, the sacrifice patterns being located in the area range of the cutting patterns; and allocating the cutting patterns and the plurality of second type patterns to at least one second layout. The layout modification method has good uniformity of developed pattern size.

The application discloses an evaluation method and device of a photoresist simulation model, a medium and a product, and relates to the technical field of photoetching simulation. The evaluation method of the photoresist simulation model comprises the following steps: obtaining photoresist parameters of a photoresist simulation model to be evaluated and an optical modeling file, wherein the optical modeling file comprises original optical modeling parameters used for constructing the photoresist simulation model to be evaluated; constructing a rotary photoresist simulation model according to the photoresist parameters and the optical modeling file; inputting the rotary optical modeling parameters into the rotary photoresist simulation model to obtain a rotary pattern size; comparing the rotary pattern size with a reference pattern size to obtain a size difference value, wherein the reference pattern size is a pattern size obtained by inputting the original optical modeling parameters into the photoresist simulation model to be evaluated; and evaluating whether the photoresist simulation model to be evaluated has an overfitting phenomenon according to the size difference value.

To provide: a resist composition which enables enhancement of lithography characteristics such as uniformity of pattern dimensions in the formation of a resist pattern, and improvement of etching resistance of a resist film; and a compound useful as an acid diffusion control agent.SOLUTION: The present invention employs a resist composition which generates an acid by means of light exposure and of which the solubility in a developer solution is changed by the action of the acid, the resist composition containing: a base material component of which the solubility in a developer solution is changed by the action of an acid; and a compound (D0) which is represented by general formula (d0). In general formula (d0): RCy is a cyclic group containing a benzene ring, or an alicyclic group; Y01 is a divalent linking group or a single bond; k is an integer equal to or greater than 1; Rd0 is a substituent other than -Y01-CN; j is an integer equal to or greater than 0; Y02 is a divalent linking group or a single bond; m is an integer equal to or greater than 1; and Mm+ represents a counter cation having a valence of m.SELECTED DRAWING: None

The purpose of the present invention is to provide: a vapor deposition mask which is capable of forming a vapor deposition film having an excellent pattern size and which is capable of suppressing the mutual influence of adjacent pixels; and a method for manufacturing an electronic device using the vapor deposition mask. This vapor deposition mask is disposed between a substrate on which vapor deposition is to be performed and a vapor deposition source, and is for vapor deposition of a vapor deposition material from the vapor deposition source onto the surface of the substrate on which vapor deposition is to be performed through an opening. The vapor deposition mask has a first surface facing the side of the substrate to be vapor deposited, and a second surface positioned on the opposite side to the first surface and facing the vapor deposition source side, and has a plurality of openings penetrating between the first surface and the second surface, the side wall surfaces of the openings being inclined such that the opening width becomes narrower from the second surface side toward the first surface side, and the side wall surfaces of the openings being inclined such that the opening width becomes narrower from the second surface side toward the first surface side. The opening width defined on the first surface side is greater than 3 [mu] m and less than 15 [mu] m.