8 results about "Pattern size" patented technology

The application provides a phase shift mask and a manufacturing method thereof. In the application, a second key pattern size corresponding to a second photoetching process is obtained, and a second photoetching machine is obtained according to the second key pattern size. The resolution identification ability of the obtained second photoetching machine is matched with the second key pattern size, so that the problem that the resolution ability of the photoetching machine used in the second photoetching process is not enough and the formed phase shift mask is defective is avoided, and the quality of the phase shift mask is improved.

The present application provides a method and system for measuring a contact lens pattern size. The method for measuring a contact lens pattern size comprises: providing a lens having a pattern; capturing the lens having the pattern using a camera module to generate a lens image, wherein the lens image comprises a pattern image portion corresponding to the pattern; setting a ring mask unit on the lens image, wherein the ring mask unit covers the pattern image portion; using an image analysis unit to perform at least one of steps (a) and (b): (a) determining an inscribed circle of the pattern image portion and calculating a diameter of the inscribed circle, (b) determining a circumscribed circle of the pattern image portion and calculating a diameter of the circumscribed circle, wherein the image analysis unit is coupled to the camera module.

This disclosure provides a display device including a display panel with pixels and an optical improvement layer on the display panel. The optical improvement layer includes a first pattern layer and a second pattern layer that overlap each other. The first pattern layer has a first refractive index, and the second pattern layer has a second refractive index different from the first refractive index. The first pattern layer has an average pattern size larger than that of the second pattern layer, and the average pattern ratio of the patterns included in the first pattern layer is less than the average pattern ratio of the patterns included in the second pattern layer. Furthermore, another embodiment of this disclosure provides an optical improvement layer.

Discussed is a display apparatus including a display panel having pixels, and an optical improvement layer on the display panel. The optical improvement layer includes a first pattern layer and a second pattern layer overlapping each other. The first pattern layer has a first refractive index, the second pattern layer has a second refractive index different from that of the first refractive index, the first pattern layer has an average pattern size greater than that of the second pattern layer, and an average of pattern ratios of patterns included in the first pattern layer is smaller than an average of pattern ratios of patterns included in the second pattern layer.

A layout modification method, a storage medium and a terminal, the method comprising: providing an initial layout, including a plurality of first type patterns and a plurality of second type patterns, the first type patterns being parallel to a first direction, the second type patterns penetrating the first type patterns along a second direction, the initial layout including a plurality of pattern areas and non-pattern areas, the first type patterns being located in the pattern areas; allocating the plurality of first type patterns to at least one first layout, the first layout including a plurality of first patterns; obtaining a target pattern area from the initial layout or the first layout, the target pattern area including a preset number of first type patterns or a preset number of first patterns; generating a preset number of sacrifice patterns and cutting patterns on both sides of the target pattern area along the second direction, the sacrifice patterns being parallel to the first type patterns, the cutting patterns being parallel to the first type patterns, the sacrifice patterns being located in the area range of the cutting patterns; and allocating the cutting patterns and the plurality of second type patterns to at least one second layout. The layout modification method has good uniformity of developed pattern size.

A display device is under discussion, comprising a display panel with pixels and an optical enhancement layer on the display panel. The optical enhancement layer contains a first pattern layer and a second pattern layer that overlap. The first pattern layer has a first refractive index, the second pattern layer has a second refractive index different from the first, the first pattern layer has an average pattern size larger than that of the second pattern layer, and the average pattern ratios of the patterns contained in the first pattern layer are smaller than the average pattern ratios of the patterns contained in the second pattern layer.