The invention belongs to the field of two-dimensional
field effect transistors, and particularly relates to
laser Raman patterned TMDs, preparation of the
laser Raman patterned TMDs and application of the
laser Raman patterned TMDs in the
field effect transistors, and the preparation method comprises the step that
laser Raman scanning is conducted on a TMDs two-dimensional material through a laser
confocal micro Raman spectrometer to achieve patterning
processing, in the
laser Raman scanning stage, the laser
wavelength is 355-633 nm, and the power is 40-60 mw; the scanning mode is a line focusing scanning mode; and the value of a Raman peak in a scanning mode is 1-1000 cm <-1 >. According to the invention, patterning
processing is carried out on the TMDs two-dimensional material based on a
laser Raman scanning means, and combined control of parameters such as a scanning mode and conditions is further matched, so that
synergy can be realized, nearly lossless patterning of the TMDs can be realized, and patterning and a subsequent
field effect transistor preparation process are simplified; and the performance loss of the
field effect transistor can be reduced, and the relatively stable performance can be maintained even when devices with different channels are prepared.