4772results about "Originals for photomechanical treatment" patented technology

Disclosed are methods and apparatus for qualifying a photolithographic reticle. A reticle inspection tool is used to acquire images at different imaging configurations from each of a plurality of pattern areas of a test reticle. A reticle near field for each of the pattern areas of the test reticle is recovered based on the acquired images from each pattern area of the test reticle. A lithography model is applied to the reticle near field for the test reticle to simulate a plurality of test wafer images, and the simulated test wafer images are analyzed to determine whether the test reticle will likely result in an unstable or defective wafer.

Various embodiments described herein relate to methods, apparatuses, and systems for post-development treatment of a metal-containing photoresist mask to improve lithographic performance. After development, the metal-containing photoresist mask may be exposed to one or more of the following treatments: thermal anneal, plasma exposure, exposure to reactive gases, and selective deposition of a protective film. In some embodiments, the metal-containing photoresist mask is exposed to one or more reactive gases to compositionally change the photoresist mask and / or selectively deposit a protective film on top surfaces and sidewalls of the photoresist mask. The treated photoresist mask may exhibit increased line CD for reduced dose-to-size and improved etch resistance.

The invention provides a photosensitive resin composition containing a photobleaching aminomethyl anthracene photosensitizer and application thereof.The structural main body anthracene ring of the photosensitizer introduces an aminomethyl functional group to the 9th and / or 10th site: through introduction of the aminomethyl functional group, while the electron cloud density of polycyclic aromatic hydrocarbon is maintained, the maximum absorption wavelength is subjected to red shift, and the photosensitive resin composition is especially suitable for a 405nm illumination system; the initiation efficiency is obviously improved; the exposure energy is reduced; compared with an existing DBA type photoinitiator, the problem of alkoxy carbon-oxygen bond breakage caused by p-pi conjugation of DBA is avoided, generation of small molecule fragments is effectively inhibited, defects are reduced, and the yield is increased. In addition, compared with DPHA and DAcOA, the photosensitizer also shows better solubility and formula compatibility. The preparation method has the characteristics of simple preparation process and low cost, and can be widely applied to the photocuring fields of dry films, paints, coatings, printing inks, forming materials and the like.

The disclosure provides a method and system for mask feature optimization and belongs to the field of computational lithography. The method includes: acquiring a new contour after the edges of the main pattern of a mask are moved inward or outward by a predetermined distance; setting a region inside the new contour as the shadow region when the movement is an inward movement and setting a region outside the new contour as the shadow region when the movement is an outward movement; screening an acquired mask gradient field solved by inverse lithography based on the shadow region to keep only the mask gradient field inside the region; and generating a sub resolution assist / inverse feature of the mask based on the screened mask gradient field.

To provide a light source device and an optical device which can improve stability of light generated from a light source.SOLUTION: A light source device 100 includes: a target holding part 110 having a holding region for holding a target material TM for generating light L0 by giving excitation light LR thereto; a rotation shaft 120 for supporting the target holding part 110; and an axial rotation driving part 130 connected to the rotation shaft 120, and rotating the target holding part 110 around a central axis C of the rotation shaft 120 through the rotation shaft, wherein the target holding part 110 is rotated at a predetermined target rotation angular velocity, and the target holding part 110 has a mass such that a dangerous angular velocity in rotation becomes 85% or less of the target rotation angular velocity.SELECTED DRAWING: Figure 1

Methods and systems for training a prediction model to predict a mask image in which mask rule check (MRC) violations or process violations (e.g., edge placement error, sub-resolution assist feature (SRAF) printing) are minimized or eliminated. The prediction model is trained based on a loss function that is indicative of (a) a difference between the predicted mask image and a reference image, and (b) at least one selected from: an MRC evaluation of the predicted mask image or an evaluation of a simulated image of the predicted mask image.

The embodiment of the invention provides a defect detection method, electronic equipment, a storage medium and a program product, and the method comprises the steps: obtaining the actual morphology data of one or more local regions of a target wafer and a global layout of the target wafer, and carrying out the global layout of the target wafer for each local region based on the mapping relation between the wafer morphology and technological parameters, determining a prediction process parameter corresponding to the actual morphology data of the local region, and predicting the wafer morphology of the global layout under the prediction process parameter of the local region for each local region based on a mapping relationship between the wafer morphology and the process parameter to obtain wafer morphology prediction data, and determining the defective pixel areas of the target wafer based on the predicted wafer morphology prediction data corresponding to each local area, determining a to-be-detected area from all the defective pixel areas, and scanning the to-be-detected area of the target wafer by using defect scanning equipment to obtain a defect detection result, so as to effectively improve the efficiency and precision of defect detection.

The invention provides an overlay mark asymmetry compensation method and device for a multi-mode deep learning network, and the method comprises the steps: obtaining manufacturing data of different modes, inputting the manufacturing data into the multi-mode deep learning network for processing, and obtaining an overlay mark asymmetry prediction error; according to the multi-modal deep learning network, feature extraction is performed on manufacturing data of different modals, feature fusion is performed on vector features corresponding to the different modals, and prediction errors with asymmetric overlay marks are obtained through association combination of physical parameters of actual production in the manufacturing process and parameters observed by equipment. Therefore, the actual overlay mark is compensated in actual production. By introducing a multi-modal learning network, various data features are fully mined and utilized, the generalization ability of the model is enhanced, meanwhile, the intelligence of equipment is realized by means of a machine learning technology, and an effective traceability and positioning solution is provided for process problems in wafer production.

The invention discloses a method for clearly imaging a mask under an optical objective, and relates to the technical field of optical detection and image processing, and the method comprises the following steps: S1, constructing a light intensity distribution model based on the boundary condition of the field of view of the optical objective in combination with the reflection characteristic and incident angle change rule of a metal edge material, and determining the coverage range of metal edge reflection crosstalk, generating a mask boundary interference prediction map; s2, according to the mask boundary interference prediction map, performing region division on the micro-reflectivity image, extracting brightness gradient characteristics of reflectivity lifting in an interference region, and generating a brightness gradient parameter set required by image filtering; the method is based on light intensity modeling, fusion direction filtering, pixel stripping, gradient reconstruction and credibility weighted fusion, realizes closed-loop control from interference prediction to pixel restoration, has high resolution and adaptivity, can accurately strip edge reflection artifacts and restore a real image structure, remarkably reduces misjudgment and rework rate, and is suitable for large-scale popularization and application. And the mask yield and the stability of the detection system are improved.

The invention relates to an experimental method for manufacturing a through hole by using gray exposure, and aims to realize a through hole structure with a specific inclination angle and depth-to-width ratio through collaborative design of photoetching and etching processes. The method comprises the following steps: determining a through hole angle and a depth-to-width ratio, selecting an etching condition, designing a gray mask structure based on an etching rate selection ratio, implementing gray exposure to obtain a mask pattern, etching, removing residual photoresist and finally forming a target through hole. And by regulating and controlling the selection ratio k of the mask to the substrate material, the inclination angle beta of the through hole and the depth H, designing the gray-scale mask morphology conforming to the target structure. The gray mask can be constructed by adopting gray photoresist or an optical modulation mask, and the inclination morphology parameter, the etching time and the etching rate of the gray mask meet a specific relation, so that high-precision structure control is realized. The method is suitable for the fields of MEMS, micro-optical devices and the like with high requirements on the morphology precision of the through hole, and has the effects of good structure consistency and high process repeatability.

A method for detecting printing defects in a photolithography mask that will print on a wafer when using the photolithography mask in a specific photolithography system to print semiconductor structures on the wafer, the method comprising: acquiring a first aerial image of the photolithography mask using a mask inspection system; generating a second aerial image of the photolithography mask by applying a machine learning model (26) to the first aerial image, wherein the machine learning model is trained to map a first aerial image acquired by a mask inspection system to a second aerial image that emulates the application of the specific photolithography system to the photolithography mask; and detecting printing defects in the photolithography mask by comparing the second aerial image to a reference image.

A method of determining a mask design, the method includes generating a continuous multimodal representation of a probability distribution of a target design in at least a portion of a latent space. The latent space includes a distribution of feature variants that can be used to generate mask designs based on the target design. The method includes selecting a variant from the continuous multimodal representation in the latent space. The variant includes a latent space representation of one or more features to be used to determine the mask design. The method includes determining the mask design based on the target design and the variant.

A method of depositing at least one fluoride layer comprises: depositing the fluoride layer on a substrate by photoassisted atomic layer deposition, ALD, in a plurality of ALD cycles. The method comprises irradiating the fluoride layer with UV / VIS light at least in some of the plurality of ALD cycles, such as in all ALD cycles, to anneal at least one potential crystal defect in the fluoride layer. The methods can be performed using an apparatus for atomic layer deposition of at least one fluoride layer, thereby producing an optical element comprising a substrate coated with such a fluoride layer, which can be used in an optical arrangement comprising at least one such optical element.

The invention provides an optical proximity effect correction method and system, a terminal and a medium, and the method comprises the steps: obtaining a plurality of initial parameter combinations of a photoetching mask design pattern, so as to form an initial population; wherein each initial individual in the initial population corresponds to a group of initial parameter combinations; determining a plurality of optimization indexes of the photoetching mask design graph, and determining an optical proximity effect correction function based on the plurality of optimization indexes and constraint conditions; and based on the optical proximity effect correction function, obtaining an optimal parameter combination of the photoetching mask design pattern in the iteration process of the initial population. According to the invention, the optimization algorithm is innovatively introduced into the field of optical proximity effect correction, comprehensive optical proximity effect correction is realized by introducing a plurality of optimization indexes, the manufacturing requirement of a high-precision silicon optical chip is effectively met, and the performance of the silicon optical chip is effectively improved.

A method (of manufacturing a semiconductor device) includes migrating a circuit design from a first netlist corresponding with a first semiconductor process technology (SPT) to a second netlist corresponding with a second SPT, the migrating including: expanding a first version of the first netlist and a first precursor of the second netlist correspondingly to form a second version of the first netlist and a second precursor of the second netlist; before conducting (A) placement and routing (P&R) of a layout diagram corresponding to the second netlist or (B) a static timing analysis of the layout diagram; performing a logic equivalence check (LEC) between the second version of the first netlist and the second precursor of the second netlist, thereby identifying migration errors, and revising the second precursor of the second netlist to reduce the migration errors, thereby resulting in a third precursor of the second netlist.

An optical proximity correction (OPC) method for manufacturing a semiconductor chip includes: detecting corners of an original target pattern having a polygonal shape; rounding off the corners to generate a curved target pattern; dividing the curved target pattern into a linear section pattern and a curved section pattern; applying Manhattan OPC to the linear section pattern to generate a modified linear section pattern; applying curvilinear OPC to the curved section pattern to generate a modified curved section pattern; and merging the modified linear section pattern and the modified curved section pattern to generate a corrected pattern.

The invention provides a photoetching mask generation model for optical proximity correction. The photoetching mask generation model comprises an encoder consisting of coordinate convolution modules and a decoder consisting of convolution modules, the encoder performs spatial feature extraction on the input feature map to obtain the specific position of each pixel coordinate in the input design layout; the decoder maps the output feature of the encoder back to the original input dimension to generate a prediction output; a coordinate channel is added in an input feature map to obtain a modified input feature map, the convolution kernel dimension of a coordinate convolution module, receiving the modified input feature map, of the encoder is correspondingly increased, and the added coordinate channel is used for improving the capacity of the encoder for obtaining spatial position information of a design layout. The invention also provides an optical proximity correction method which is trained by using the photoetching mask generation model for optical proximity correction provided by the invention so as to improve the correction precision.

The invention discloses a layout generation method for load effect compensation and a related device, which are applied to the technical field of photoetching and comprise the following steps: acquiring photomask data; carrying out grid division on the mask graph according to the photomask data, and determining layout density in each grid; comparing the layout density of each grid with a target density, and determining a density difference value corresponding to each grid; determining a virtual graph corresponding to each grid according to the density difference value; and adding a corresponding virtual graph in a layout area corresponding to the grid to form a compensated mask plate graph. By performing grid division on the mask plate graph, calculating the specific layout density in each grid and adding the corresponding virtual graph to the layout area corresponding to the grid according to the difference value between the layout density and the target density, the graph density of the layout area in each grid can be effectively compensated, so that the load effect of each area in the layout is balanced, and the performance of the mask plate is improved. And the etching uniformity is improved.

The various embodiments described herein relate to methods, apparatuses, and systems for post-development processing of metal-containing photoresist masks to improve lithography performance. After development, the metal-containing photoresist mask may be exposed to one or more of the following processes: thermal annealing, plasma exposure, exposure to a reactive gas, and selective deposition of a protective film. In some embodiments, the metal-containing photoresist mask is exposed to one or more reactive gases to change the composition of the photoresist mask and / or selectively deposit a protective film on the top surface and sidewalls of the photoresist mask. The processed photoresist mask may exhibit an increase in line CD for reduction of dose-to-size and improvement of etch resistance.

This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and / or patterning performance of the imaging layer.

The embodiment of the invention discloses a photoetching mask updating method and device, electronic equipment and a storage medium. The method comprises the following steps: acquiring a target chip layout, constructing a mask pattern and a level set function, and performing photoetching simulation on the mask pattern to obtain a wafer pattern; determining target loss according to the difference between the target chip layout and the wafer pattern, obtaining a first optimization item through a conjugate gradient optimizer, and obtaining a second optimization item through an adaptive moment estimation optimizer; performing attention processing on the target chip layout to obtain a target attention map, and adjusting the second optimization item based on the target attention map; updating the level set function based on the first optimization item and the adjusted second optimization item, and updating the mask pattern based on the updated level set function; according to the embodiment of the invention, while the complexity of the mask pattern is reduced, the pattern error of the mask pattern is effectively reduced, so that the correction precision of the mask pattern is improved, and the method can be widely applied to scenes such as cloud technology and chip manufacturing.

The invention discloses a construction method, device and equipment of a dual etching model, a medium and a product, and relates to the technical field of semiconductor manufacturing. The method comprises the following steps: acquiring a light intensity distribution image set; pairing any two light intensity distribution images in the light intensity distribution image set to obtain a plurality of image pairs; for each image pair, respectively inputting the first light intensity distribution image and the second light intensity distribution image in the image pair into a photoetching process model to obtain a first photoresist image and a first etching image as well as a second photoresist image and a second etching image; for each image pair, fusing the first etching image and the second etching image to obtain a target etching label image; and for each image pair, taking the first photoresist image and the second photoresist image as independent variables, taking the target etching label image as a dependent variable, and training the target machine learning model to obtain a dual etching model. According to the invention, the accuracy of the dual etching model can be improved.

The invention provides a pattern correction method and correction system for a mask, and the method comprises the following steps: setting a plurality of main patterns and a plurality of auxiliary patterns, and collecting wafer data after photoetching of the main patterns and the auxiliary patterns; searching a main pattern with the same characteristic size as the auxiliary pattern on the mask plate as a reference pattern; acquiring a scaling ratio of the reference pattern transferred to the wafer from the mask plate, and acquiring virtual size data of the auxiliary pattern transferred to the wafer according to the scaling ratio and size information of the auxiliary pattern on the mask plate; and taking the virtual size data and the wafer data as modeling parameters of an optical proximity correction model, and iteratively establishing the optical proximity correction model until the correction error is smaller than a threshold value. The invention provides a pattern correction method and correction system for a mask plate, which can improve the pattern transfer accuracy of photoetching, thereby improving the semiconductor manufacturing yield.

The invention relates to the technical field of semiconductor manufacturing, in particular to a photomask correction method, device and equipment and a medium, and the photomask correction method comprises the steps: obtaining a test layout with known parameters; training the initial optical proximity correction model based on known parameters until the cost evaluation function and the root-mean-square value are minimum, and obtaining an optical correction model; obtaining photochemical reaction parameters of the test layout, training an optical correction model based on the photochemical reaction parameters until the cost evaluation function and the root mean square value are minimum, and obtaining a target layout correction model; and inputting the initial layout into a target layout correction model to obtain a corrected layout, so as to obtain a target photomask based on the corrected layout, and at least ensuring that the exposed photomask pattern is consistent with a target pattern actually expected by a user.

The invention relates to the technical field of display, and provides a method for improving the straightness of a metal mask, which comprises the following steps: measuring the pixel position precision deviation of a plurality of specified point positions of a plurality of sample masks; selecting the X coordinates of the plurality of specified points as an independent variable and the sum of the Y coordinates and the Y-direction deviation as a dependent variable for fitting, or selecting the Y coordinates of the plurality of specified points as an independent variable and the sum of the X coordinates and the X-direction deviation as a dependent variable for fitting to obtain a fitting expression; when a target product is manufactured, a compensation value required by a theoretical coordinate value of a pixel opening point location of the target product is calculated, the theoretical coordinate value of the pixel opening point location in a photomask design layout of the target product is replaced by a compensated actual coordinate value, and the compensated photomask design layout is adopted to expose and manufacture a metal mask plate. The technical problems that the straightness of the metal mask plate is poor, the product yield is poor and the cost is wasted due to the fact that the raw material type is poor are solved.

A reticle pod with backside static dissipation has an inner pod defining an accommodation space for a reticle. Multiple flexible guiding components are correspondingly disposed on multiple outer mounting portions of the inner pod in order to guide an inner cover and an inner base of the inner pod to position without relative displacement. Multiple conductive retainers are correspondingly arranged in the accommodation space to push against a backside of the reticle and form a full-time electrical conduction with the back side of the reticle, so as to establish a static dissipation path by the conductive retainers and the inner pod. Meanwhile, with the conductive retainers pushing against the reticle as well as the flexible guiding components providing the inner cover and the inner base with automatic position guiding, the reticle is automatically pushed and positioned to a center position of the inner base.

According to the OPC result correction method and the result verification device thereof provided by the invention, the NILS value is introduced as an index for measuring correction quality on the basis of the existing OPC correction method, so that the absolute value of the EPE value of the target graph after OPC correction is ensured to meet the requirement of the preset EPE standard value, and the NILS value of the target graph can be improved; according to the method, the target graph after OPC correction has better spatial graph contrast, and better imaging quality is obtained in the actual exposure process, so that the problem of disconnection or bridging caused by size deviation of the target graph is effectively avoided, and further, the image quality is improved. The better spatial pattern contrast can bring better photoresist morphology and a larger photoetching process window, so that the generation of pattern defects is reduced, and the improvement of the yield of products is more facilitated.

The invention discloses an SRAF adding method and device, a storage medium and electronic device.The SRAF adding method comprises the steps that a target layer layout, an original SRAF and a process design rule are obtained; extracting target features from the target layer layout, and extracting a minimum safety interval from the process design rules; expanding the target feature and the original SRAF according to the minimum safety distance to form a blocking region; calculating a difference set of the blocking region and the target layer layout boundary to obtain a plurality of blank regions; generating a plurality of candidate SRAFs based on the blank area, and determining a target SRAF from the plurality of candidate SRAFs according to a preset rule; and combining the target SRAF with the candidate SRAF to generate a final SRAF set. According to the embodiment of the invention, the blank area can be automatically identified, and the SRAF can be adaptively generated in the blank area.