The invention relates to the field of microelectronic devices, in particular to a
bulk acoustic wave resonator with a double-layer piezoelectric
film structure, a preparation method and a filter, the
bulk acoustic wave resonator comprises a cap
wafer, and a dry film, a
passivation layer, a
silicon oxide layer, a high-resistance
silicon wafer and RDL
metal are sequentially arranged on the cap
wafer; the dry film and the cap wafer form a dry film cavity, the
passivation layer located above the dry film cavity extends into the dry film cavity, and a top
electrode, a first piezoelectric film, a middle
electrode, a second piezoelectric film and a bottom
electrode are sequentially arranged on the
passivation layer; the top electrode and the bottom electrode are used as first ports of the
resonator; and the middle electrode is a second port. According to the resonator, the excitation mode of the resonator is changed through cooperation of the two
layers of piezoelectric films with the same polarization direction and the intermediate electrode, a high-order
resonance mode is jointly excited, meanwhile, a high
electromechanical coupling coefficient is kept, and a wide
fractional bandwidth is achieved at
high frequency through the relatively thick piezoelectric films; the problems that a high-frequency resonator is weak in power
bearing capacity, narrow in bandwidth, low in quality factor and poor in stability are solved.