14 results about "Overlayer" patented technology

The invention relates to a material comprising a substrate (30) coated on one face (29) with a stack of thin layers (14) comprising at least one metallic functional layer (140) and an antireflective coating (160) located above said functional layer (140) opposite said substrate (30) ends with: - a metallic layer (168), with a physical thickness of said metallic layer (168) which is between 1.0 and 8.0 nm, or even between 1.5 and 5.0 nm, or even between 1.8 and 2.5 nm; then - a dielectric overlayer (169) which is located on and in contact with said absorbing metallic layer (168). Abstract figure: Figure 1

An open substrate through hole (1) TSV comprises an insulating layer (20) arranged adjacent to at least part of a side wall (15) of a trench (14) and to a surface (13) of a substrate body (10). The TSV further comprises a metallization layer (30) arranged adjacent to at least part of the insulating layer (20) and to at least part of a bottom wall (16) of the trench (14), a redistribution layer (40) arranged adjacent to at least part of the metallization layer (30) and to the part of the insulating layer (20) arranged adjacent to the surface (13), and a capping layer (50) arranged adjacent to at least part of the metallization layer (30) and to at least part of the redistribution layer (40). The insulating layer (20) and / or the capping layer (50) comprise sub-layers (21, 22, 51, 52) that differ from each other in material properties. A first one (21, 51) of the sub-layers is arranged adjacent to at least part of the side wall (15) and to at least part of the surface (13), and a second one (22, 52) of the sub-layers is arranged adjacent to at least part of the surface (13).

A process that exhibits: i) Forming a layer (21), hereinafter referred to as the SA layer, which has a self-assembly material, hereinafter referred to as the SA material, on an upper surface of a hybrid prestructure, and forming a cover layer (174) which is arranged on an upper surface of the SA layer (21), wherein the SA material for self-organization to form a phase-separated lamellar area structure (31) with a characteristic pitch Lo is formed, the prestructure is arranged on a substrate (60), the upper surface (13) of the prestructure has a geometric principal axis, the upper surface of the prestructure comprises a) independent raised surfaces (13) interspersed with adjacent recessed surfaces (14) and b) side walls (18) connecting the raised surfaces (13) with the recessed surfaces (14), the material located under the raised surfaces (13) of the prestructure has a higher etch resistance in a specific etching process compared to the material located under the recessed surfaces (14) of the prestructure, a certain raised surface (13) a width W E has, which is defined as the length of the determined raised surface (13) in a direction perpendicular to the principal axis, a specific recessed surface (14) a width W R has, which is defined as the length of the recessed surface (14) in a direction perpendicular to the principal axis, W R +W E for each pair of adjacent recessed and raised surfaces (13, 14) there is an independent sum with a value of approximately nLo, where n is an integer from 4 to approximately 30, W R of at least one of the recessed surfaces (14) is larger than about 2 Lo, W Eof at least one of the raised surfaces (13) is larger than about 2 Lo, each of the side walls (18) has an independent height H N from about 0.1 Lo to about 2 Lo, the SA layer (21) is in contact with the raised surfaces (13), the recessed surfaces (14) and the side walls (18) of the prestructure, and the SA layer (21) has an upper surface in contact with the topmost coating; ii) Enabling or inducing the self-organization of the SA material, thereby forming a self-organized SA layer (21) having the lamellar region structure, wherein the region structure has alternating regions (32, 33) each having chemically different components of the SA material, wherein each of the regions has a plurality of lamellae, wherein the raised surfaces (13) are neutral-wetting for the areas (32,33), each of the raised surfaces (13) touches at least one of the lamellae of each of the areas (32, 33), each of the lamellae in contact with a given raised surface (13) of the prestructure is a) oriented perpendicular to the given raised surface (13), b) in contact with the cover layer above the given raised surface (13), and c) oriented along the principal axis of the prestructure. iii) selective removal of one of the areas (32, 33) by means of an etching process, thereby forming an etched area structure that has the lamellae of a remaining area; and iv) selectively transferring the etched area structure into the material with a higher etch resistance under the raised surfaces (13) by means of a second etching process, thereby forming a transfer structure which has topographic features which material with a higher etch resistance has.

To provide a bismuth-based overlay layer having high fatigue resistance even when additive particles are included.SOLUTION: A bismuth-based overlay layer for a sliding member comprises a polycrystalline matrix containing crystal particles composed of a material containing bismuth or a bismuth alloy, and additive particles dispersed in the matrix. The matrix includes a region where crystal particles having a Grain Orientation Spread (GOS) of 1 degree or less account for 85% or more of all crystal particles.SELECTED DRAWING: Figure 1

Various embodiments of methods are provided that utilize an overlayer to accelerate etching of an underlayer provided on a semiconductor substrate. In the embodiments disclosed herein, an ultrathin (e.g., less than 2 nm) overlayer film is deposited onto an underlayer to enhance the local etch rate of (and selectivity to) the underlayer during a dry chemical etch process performed at low temperature (e.g., less than or equal to 100° C.). The overlayer film, which comprises a metal oxide or metal fluoride material, accelerates etching of the underlayer at temperatures below the threshold energy typically needed to enable chemical reactions on a bare underlayer surface by providing a medium for more effective chemical reactions at the surface of the underlayer.

Various embodiments of methods are provided that utilize an overlayer to accelerate etching of an underlayer provided on a semiconductor substrate. In the embodiments disclosed herein, an ultrathin (e.g., less than 2 nm) overlayer film is deposited onto an underlayer to enhance the local etch rate of (and selectivity to) the underlayer during a dry chemical etch process performed at low temperature (e.g., less than or equal to 100°C). The overlayer film, which comprises a metal oxide or metal fluoride material, accelerates etching of the underlayer at temperatures below the threshold energy typically needed to enable chemical reactions on a bare underlayer surface by providing a medium for more effective chemical reactions at the surface of the underlayer.

Provided is a bismuth-based overlay layer having high fatigue resistance even when additive particles are contained.　A bismuth-based overlay layer for a sliding member according to the present invention includes: a polycrystalline matrix including crystal particles made of a material containing bismuth or a bismuth alloy; and additive particles dispersed in the matrix. The matrix includes a region in which crystal particles having one degree or less of grain orientation spread (GOS) accounts for 85% or more of all the crystal particles.

To stably grow a regrowth layer.SOLUTION: A manufacturing method of a nitride crystal substrate includes the steps of: (a) preparing a substrate; (b) forming an intermediate layer including an n-type III-group nitride crystal above the substrate; (c) forming a cover layer including a III-group nitride crystal having a carrier concentration lower than that of the intermediate layer on the intermediate layer; (d) making the intermediate layer porous through a dislocation in the cover layer by electrochemical treatment while a surface state of the cover layer is maintained; (e) epitaxially growing a regrowth layer composed of a III-group nitride crystal on the cover layer; and (f) peeling the regrowth layer from the substrate at least at a part of a porous intermediate layer as a boundary. The step (e) has the steps of: (e1) growing a first regrowth layer on the cover layer at a first growth temperature; and (e2) growing a second regrowth layer on the first growth layer at a second growth temperature. The first growth temperature is lower than the second growth temperature at the step (e1).SELECTED DRAWING: Figure 1

A superstrate for forming a planarization layer on a substrate can include a body having a first surface, a second surface opposite the first surface, and a chamfered edge between the first surface and the second surface. An opaque layer can coat the chamfered edge. In another embodiment, an opaque layer can coat the chamfered edge and a portion of the second surface. The superstrate can be used for more planarization or other processing sequences without causing extrusion defects.

Microfluidic probe head (100) featuring: - a base layer (120) and a top layer (110), wherein the base layer (120) and the top layer (110) each have a front face (320); - a first working fluid microchannel (123) in fluid communication with a first working fluid opening (121) and a second working fluid microchannel (124) in fluid communication with a second working fluid opening (122) at the front face (320) of the base layer (120), wherein at least a portion of the first and second working fluid microchannels (123, 124) is a groove (123', 124') that is open at an upper side of the base layer (120) and is closed off by a lower side of the cover layer (110), and that extends to the working fluid opening (121, 122), the latter being arranged at one end of the groove (123', 124') in the plane of an edge (310) of the upper side of the base layer (120); and - a first immersion fluid microchannel (223) in fluid communication with a first immersion fluid opening (221) on a first lateral side of the base layer (120) and a second immersion fluid microchannel (224) in fluid communication with a second immersion fluid opening (222) on a second lateral side of the base layer (120), wherein at least a part of the first and the second immersion fluid microchannel (223, 224) is open on the upper side of the base layer (120) and is closed off by the lower side of the cover layer (110), wherein the microfluidic probe head (100) is designed to combine working fluid supplied through the first working fluid orifice (121) with immersion fluid supplied through at least one of the immersion fluid orifices (221, 222), and wherein the microfluidic probe head (100) is designed to aspirate, when used at the second working fluid orifice (122), some fluid that has been discharged through the first working fluid orifice (121) and the first and second immersion fluid orifices (221, 222).

The invention provides a magnetic topological insulator heterojunction material and a synthesis method thereof, and relates to the technical field of topological insulator heterojunction materials. The magnetic topological insulator heterojunction material adopts a four-layer composite structure of a magnetic buffer layer, an interface modification layer, a topological insulator layer and a magnetic covering layer, a room-temperature ferromagnetic material Fe3O4 is taken as a magnetic functional layer, (Bi0. 8Sb0. 2) 2Se3 is taken as a topological insulating layer, and lattice matching and defect passivation are realized through an Al2O3 interface modification layer; secondly, the synthesis method is combined with magnetron sputtering, atomic layer deposition and pulse laser deposition technologies, and is matched with a step-by-step annealing process, so that the problems of insufficient magnetic stability, serious interface diffusion and low spin conversion efficiency in the prior art are solved. The Curie temperature of the heterojunction reaches more than 350K, the spin Hall angle is higher than 1.0, and the heterojunction can be used in the fields of diodes and topological quantum computing.

The present invention aims to provide a reflective photomask that has excellent hydrogen radical resistance, reduces the deterioration of transferability caused by phase difference in the reflective portion, and improves the adhesion (interlayer adhesion) between the capping layer and the protective layer. A reflective mask (10) according to the present embodiment comprises a substrate (1), a multilayer reflective film (2), a capping layer (3), an absorption portion (4), and a protective layer (5) formed on the side of the capping layer (3), on the absorption portion (4), and on the side of the absorption portion (4). The extinction coefficient k of the absorption portion (4) is 0.04 or higher for EUV light, the capping layer (3) and the protective layer (5) are formed of the same material, the reflectance of EUV light in the reflection portion, which is an area where the absorption portion (4) is not formed on the capping layer (3), is 50% or higher, the total film thickness of the capping layer (3) and the protective layer (5) is 3 nm or higher, and the capping layer (3) and the protective layer (5) have resistance to hydrogen radicals.

The present application aims to provide a reflective photomask having excellent hydrogen radical resistance, capable of reducing deterioration of transferability caused by phase difference of a reflection portion, and capable of improving adhesion of a cover layer and a protective layer (interlayer adhesion). The reflective mask (10) according to the present embodiment includes a substrate (1), a multilayer reflection film (2), a cover layer (3), an absorption portion (4), and a protective layer (5) formed on the cover layer (3), on the absorption portion (4), and on the side surface of the absorption portion (4), the absorption portion (4) has an extinction coefficient k of 0.04 or more for EUV light, the cover layer (3) and the protective layer (5) are formed of the same material, the reflectance of a reflection portion, which is a region of the cover layer (3) where the absorption portion (4) is not formed, with respect to EUV light is 50% or more, the total film thickness of the cover layer (3) and the protective layer (5) is 3 nm or more, and the cover layer (3) and the protective layer (5) have hydrogen radical resistance.