7 results about "Overlayer" patented technology

An open substrate through hole (1) TSV comprises an insulating layer (20) arranged adjacent to at least part of a side wall (15) of a trench (14) and to a surface (13) of a substrate body (10). The TSV further comprises a metallization layer (30) arranged adjacent to at least part of the insulating layer (20) and to at least part of a bottom wall (16) of the trench (14), a redistribution layer (40) arranged adjacent to at least part of the metallization layer (30) and to the part of the insulating layer (20) arranged adjacent to the surface (13), and a capping layer (50) arranged adjacent to at least part of the metallization layer (30) and to at least part of the redistribution layer (40). The insulating layer (20) and / or the capping layer (50) comprise sub-layers (21, 22, 51, 52) that differ from each other in material properties. A first one (21, 51) of the sub-layers is arranged adjacent to at least part of the side wall (15) and to at least part of the surface (13), and a second one (22, 52) of the sub-layers is arranged adjacent to at least part of the surface (13).

Various embodiments of methods are provided that utilize an overlayer to accelerate etching of an underlayer provided on a semiconductor substrate. In the embodiments disclosed herein, an ultrathin (e.g., less than 2 nm) overlayer film is deposited onto an underlayer to enhance the local etch rate of (and selectivity to) the underlayer during a dry chemical etch process performed at low temperature (e.g., less than or equal to 100° C.). The overlayer film, which comprises a metal oxide or metal fluoride material, accelerates etching of the underlayer at temperatures below the threshold energy typically needed to enable chemical reactions on a bare underlayer surface by providing a medium for more effective chemical reactions at the surface of the underlayer.

Various embodiments of methods are provided that utilize an overlayer to accelerate etching of an underlayer provided on a semiconductor substrate. In the embodiments disclosed herein, an ultrathin (e.g., less than 2 nm) overlayer film is deposited onto an underlayer to enhance the local etch rate of (and selectivity to) the underlayer during a dry chemical etch process performed at low temperature (e.g., less than or equal to 100°C). The overlayer film, which comprises a metal oxide or metal fluoride material, accelerates etching of the underlayer at temperatures below the threshold energy typically needed to enable chemical reactions on a bare underlayer surface by providing a medium for more effective chemical reactions at the surface of the underlayer.

Microfluidic probe head (100) featuring: - a base layer (120) and a top layer (110), wherein the base layer (120) and the top layer (110) each have a front face (320); - a first working fluid microchannel (123) in fluid communication with a first working fluid opening (121) and a second working fluid microchannel (124) in fluid communication with a second working fluid opening (122) at the front face (320) of the base layer (120), wherein at least a portion of the first and second working fluid microchannels (123, 124) is a groove (123', 124') that is open at an upper side of the base layer (120) and is closed off by a lower side of the cover layer (110), and that extends to the working fluid opening (121, 122), the latter being arranged at one end of the groove (123', 124') in the plane of an edge (310) of the upper side of the base layer (120); and - a first immersion fluid microchannel (223) in fluid communication with a first immersion fluid opening (221) on a first lateral side of the base layer (120) and a second immersion fluid microchannel (224) in fluid communication with a second immersion fluid opening (222) on a second lateral side of the base layer (120), wherein at least a part of the first and the second immersion fluid microchannel (223, 224) is open on the upper side of the base layer (120) and is closed off by the lower side of the cover layer (110), wherein the microfluidic probe head (100) is designed to combine working fluid supplied through the first working fluid orifice (121) with immersion fluid supplied through at least one of the immersion fluid orifices (221, 222), and wherein the microfluidic probe head (100) is designed to aspirate, when used at the second working fluid orifice (122), some fluid that has been discharged through the first working fluid orifice (121) and the first and second immersion fluid orifices (221, 222).

The invention provides a magnetic topological insulator heterojunction material and a synthesis method thereof, and relates to the technical field of topological insulator heterojunction materials. The magnetic topological insulator heterojunction material adopts a four-layer composite structure of a magnetic buffer layer, an interface modification layer, a topological insulator layer and a magnetic covering layer, a room-temperature ferromagnetic material Fe3O4 is taken as a magnetic functional layer, (Bi0. 8Sb0. 2) 2Se3 is taken as a topological insulating layer, and lattice matching and defect passivation are realized through an Al2O3 interface modification layer; secondly, the synthesis method is combined with magnetron sputtering, atomic layer deposition and pulse laser deposition technologies, and is matched with a step-by-step annealing process, so that the problems of insufficient magnetic stability, serious interface diffusion and low spin conversion efficiency in the prior art are solved. The Curie temperature of the heterojunction reaches more than 350K, the spin Hall angle is higher than 1.0, and the heterojunction can be used in the fields of diodes and topological quantum computing.

The present invention aims to provide a reflective photomask that has excellent hydrogen radical resistance, reduces the deterioration of transferability caused by phase difference in the reflective portion, and improves the adhesion (interlayer adhesion) between the capping layer and the protective layer. A reflective mask (10) according to the present embodiment comprises a substrate (1), a multilayer reflective film (2), a capping layer (3), an absorption portion (4), and a protective layer (5) formed on the side of the capping layer (3), on the absorption portion (4), and on the side of the absorption portion (4). The extinction coefficient k of the absorption portion (4) is 0.04 or higher for EUV light, the capping layer (3) and the protective layer (5) are formed of the same material, the reflectance of EUV light in the reflection portion, which is an area where the absorption portion (4) is not formed on the capping layer (3), is 50% or higher, the total film thickness of the capping layer (3) and the protective layer (5) is 3 nm or higher, and the capping layer (3) and the protective layer (5) have resistance to hydrogen radicals.

The present application aims to provide a reflective photomask having excellent hydrogen radical resistance, capable of reducing deterioration of transferability caused by phase difference of a reflection portion, and capable of improving adhesion of a cover layer and a protective layer (interlayer adhesion). The reflective mask (10) according to the present embodiment includes a substrate (1), a multilayer reflection film (2), a cover layer (3), an absorption portion (4), and a protective layer (5) formed on the cover layer (3), on the absorption portion (4), and on the side surface of the absorption portion (4), the absorption portion (4) has an extinction coefficient k of 0.04 or more for EUV light, the cover layer (3) and the protective layer (5) are formed of the same material, the reflectance of a reflection portion, which is a region of the cover layer (3) where the absorption portion (4) is not formed, with respect to EUV light is 50% or more, the total film thickness of the cover layer (3) and the protective layer (5) is 3 nm or more, and the cover layer (3) and the protective layer (5) have hydrogen radical resistance.