2542 results about "Magnetostriction" patented technology

The present invention relates to the mounting of pre-stressed electroactive material in such a manner that large displacement actuators or sensors result. The invention comprises mounting the pre-stressed electroactive material to a support layer. This combination of a pre-stressed electroactive material and support layer may in turn be attached to a mounting surface. The pre-stressed electroactive material may be a ferroelectric, pyroelectric, piezoelectric, or magnetostrictive material. The size, stiffness, mass, and material of the support layer is selected to result in the electroactive device having dynamic response properties, environmental capability characteristics, and the required resilience optimized for a given application. The capacity to connect the support layer to a surface expands the arenas in which the pre-stressed electroactive device may be used. Application for which the invention may be used include actuators, sensors, or as a component in a pumps, switches, relays, pressure transducers and acoustic devices.

The present invention provides a thin film write head having an improved laminated flux carrying structure and method of fabrication. The preferred embodiment provides laminated layers of: high moment magnetic material, and easily aligned high resistivity magnetic material. In the preferred embodiment, the easily aligned laminating layer induces uniaxial anisotropy, by exchange coupling, to improve uniaxial anisotropy in the high moment material. This allows deposition induced uniaxial anisotropy by DC magnetron sputtering and also provides improved post deposition annealing, if desired. It is preferred to laminate FeXN, such as FeRhN, or other crystalline structure material, with an amorphous alloy material, preferably Co based, such as CoZrCr. In the preferred embodiment, upper and lower pole structures may both be laminated as discussed above. Such laminated structures have higher Bs than structures with insulative laminates, and yokes and pole tips and may be integrally formed, if desired, because flux may travel along or across the laminating layers. The preferred embodiment of the present invention improves soft magnetic properties, reduces eddy currents, improves hard axis alignment while not deleteriously affecting the coercivity, permeability, and magnetostriction of the structure, thus allowing for improved high frequency operation.

The present invention provides an improved top spin valve and method of fabrication. In the preferred embodiment of the top spin valve of the present invention, a seed layer is formed of non-magnetic material having the elements Ni and Cr. In the preferred embodiments, the seed layer material has an ion milling rate comparable to that of the free layer material. This allows free layer sidewalls to be formed with shorter tails, improving free layer-to-magnetic bias layer junction, thus improving free layer domain structure and track width. In one embodiment, the seed layer may have NiFeCr, with Cr from about 20% to 50%. In another embodiment, the seed layer may have NiCr, with about 40%. Some embodiments may have the seed layer formed on an optional Ta pre-seed layer. Such embodiments provide an improved fcc (111) texture particularly for NiFe and for NiFe/CoFe free layers grown on a seed layer improving spin valve performance, and especially in embodiments having very thin NiFe free layers, ultra thin NiFe free layers, and free layers without NiFe, such as a free layer of CoFe. Such a seed layer can improve AFM pinning layer texture to improve the exchange bias, thus providing better thermal stability. Such a seed layer also provides high resistivity and can improve the magnetostriction of adjacent NiFe free layer material or improve the soft properties of an adjacent CoFe free layer.

An MTJ in an MRAM array or in a TMR read head is comprised of a capping layer with a lower inter-diffusion barrier layer, an intermediate oxygen gettering layer, and an upper metal layer that contacts a top conductor. The composite capping layer is especially useful with a moderate spin polarization free layer such as a NiFe layer with a Fe content of about 17.5 to 20 atomic %. The capping layer preferably has a Ru/Ta/Ru configuration in which the lower Ru layer is about 10 to 30 Angstroms thick and the Ta layer is about 30 Angstroms thick. As a result, a high dR/R of about 40% is achieved with low magnetostriction less than about 1.0 E-6 in an MTJ in an MRAM array. Best results are obtained with an AlOx tunnel barrier layer formed by an in-situ ROX process on an 8 to 10 Angstrom thick Al layer.

A read/write head for use in a data storage device to control the low dynamic flying height in order to achieve high data recording storage capacity of magnetic hard drives. The read/write head is designed for use in a data storage device that includes a storage medium having a recording surface. The head comprises a pole tip region and an actuator. In turn, the actuator includes an excitation source for generating a magnetic field, and a magnetostrictive plate for expanding in response to the magnetic field, resulting in a protrusion in a section of the pole tip region along a direction towards the recording surface, so that the head flies above the recording surface at a flying height lower than a nominal flying height.

A magnetoresistive sensor having a novel free layer and a method of producing the same are disclosed. The magnetoresistive sensor comprises a pinned layer, a barrier layer disposed over the pinned layer, and a free layer disposed over the barrier layer. The free layer comprises a first magnetic layer disposed over the barrier layer. The first magnetic layer has a positive spin polarization, a positive magnetostriction, and a polycrystalline structure. The free layer further comprises a second magnetic layer disposed over the first magnetic layer. The second magnetic layer has a negative magnetostriction and comprises at least cobalt (Co) and boron (B).

A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, fabricating a metallic spacer layer and oxidizing a portion of the spacer layer in an environment including at least oxygen and a gas inert with respect to the spacer layer to provide an oxide layer. The method and system also include creating a free layer. The oxide layer is between a remaining metallic portion of the spacer layer and the free layer. In one aspect, the system includes a chamber and a gas diffusion apparatus within the chamber. The gas diffusion apparatus includes a plurality of nozzles and defines a plane. The gas exits each of the plurality of nozzles in a cone having an apex angle. The nozzles are directed at a nozzle tilt angle of at least half of the apex angle from the plane and the spacer layer.

A magnetoresistive element comprises an exchange coupling film having a under layer, an antiferromagnetic film and a ferromagnetic film, which are laminated in that order, the under layer including a metal having a face centered cubic crystal structure or hexagonal closest packing crystal structure which have a longer nearest neighbor atomic distance than that of the antiferromagnetic film. With this construction, it is possible to improve the exchange coupling field and to satisfy a stable output over a long period of time. A magnetoresistive element having a dual spin valve structure has a magnetization adjusting layer, which is antiferromagnetically connected to a pinned layer via an anti-parallel connection layer, to adjust the value of the product of the saturation magnetization of each of the magnetization adjusting layer and the pinned layer by the thickness thereof. Moreover, a magnetoresistance head use a giant magnetoresistance effect, and has at least one pair of pinned layer and free layer arranged via a non-magnetic spacer layer. The pinned layer has a pair of ferromagnetic layers which have different compositions and different coercive forces and which are antiferromagnetically connected to each other via a connection layer, so that the effective exchange coupling field of the pinned layer is 200 Oe or more.

A pressure sensing apparatus for operative arrangement within an environment, having: a sensor comprising a hermetically-sealed receptacle, at least one side of which has an flexible membrane to which a magnetically hard element is attached. Enclosed within the receptacle is a magnetostrictive element that vibrates in response to a time-varying magnetic field. Also included is a receiver to measure a plurality of successive values for magneto-elastic emission intensity of the sensor taken over an operating range of successive interrogation frequencies to identify a resonant frequency value for the sensor. Additional features include: (a) the magnetically hard element may be adhered to an inner or outer side of, or embedded within, the membrane; (b) the magnetostrictive element can include one or more of a variety of different pre-formed, hardened regions; (c) the magneto-elastic emission may be a primarily acoustic or electromagnetic emission; and (d) in the event the time-varying magnetic field is emitted as a single pulse or series of pulses, the receiver unit can detect a transitory time-response of the emission intensity of each pulse (detected after a threshold amplitude value for the transitory time-response is observed). A Fourier transform of the time-response can yield results in the frequency domain. Also, an associated method of sensing pressure of an environment is included that uses a sensor having a magnetostrictive element to identify a magneto-elastic resonant frequency value therefore. Using the magneto-elastic resonant frequency value identified, a value for the pressure of the environment can be identified.

A micromechanical resonator device and a micromechanical device utilizing same are disclosed based upon a radially or laterally vibrating disk structure and capable of vibrating at frequencies well past the GHz range. The center of the disk is a nodal point, so when the disk resonator is supported at its center, anchor dissipation to the substrate is minimized, allowing this design to retain high-Q at high frequency. In addition, this design retains high stiffness at high frequencies and so maximizes dynamic range. Furthermore, the sidewall surface area of this disk resonator is often larger than that attainable in previous flexural-mode resonator designs, allowing this disk design to achieve a smaller series motional resistance than its counterparts when using capacitive (or electrostatic) transduction at a given frequency. Capacitive detection is not required in this design, and piezoelectric, magnetostrictive, etc. detection are also possible. The frequency and dynamic range attainable by this resonator makes it applicable to high-Q RF filtering and oscillator applications in a wide variety of communication systems. Its size also makes it particularly suited for portable, wireless applications, where, if used in large numbers, such a resonator can greatly lower the power consumption, increase robustness, and extend the range of application of high performance wireless transceivers.

A magnetoresistive read head includes a spin valve having at least one free layer spaced apart from at least one pinned layer by a spacer. The free layer includes a thin CoFeOx lamination layer in the CoFe, and an optional Cu layer. The amount of oxygen is below 10% of total gas. The pinned layer is a single layer, or a synthetic multi-layered structure having a spacer between sub-layers, and may have the foregoing low-magnetostriction material. As a result, low magnetostriction is obtained to improve read quality and/or improve the pinned field of the pinned layer. Other parameters are not adversely affected.

A high performance TMR sensor is fabricated by employing a free layer comprised of CoB_X with a λ between −5×10⁻⁶ and 0 on a MgO_X tunnel barrier. Optionally, a FeCo/CoB_X free layer configuration may be used where x is about 1 to 30 atomic %. Trilayer configurations represented by FeCo/CoFeB/CoB_X, FeCo/CoB_X/CoFeB, FeCo_Y/CoFe_W/CoB_X, or FeCo_Y/FeB/CoB_X may also be employed. Alternatively, CoNiFeB or CoNiFeBM formed by co-sputtering CoB with CoNiFe or CoNiFeM, respectively, where M is V, Ti, Zr, Nb, Hf, Ta, or Mo may be substituted for CoBx in the aforementioned embodiments. A 15 to 30% in improvement in TMR ratio over a conventional CoFe/NiFe free layer is achieved while maintaining a low Hc and RA<3 ohm-um². In bilayer or trilayer embodiments, λ between −5×10⁻⁶ and 5×10⁻⁶ is achieved by combining CoBx (−λ) and one or more layers having a positive λ.

An improved method of sensing strain allows measurements of stress, torque, vibration and other loads imposed on a body without physical contact between the body/sensor and the monitoring equipment. An induction loop is at least partially comprised of a magnetostrictive material with a non-linear current-voltage relationship. An excitation device such as a coil is used to induce an AC response in the sensor. The non-linear response to the induced current is received by a sensing device such as a sensing coil, and the output thereof is filtered. The excitation device and sensing device are located in operative proximity to the sensor, but need not be in contact therewith, allowing easy measurement in small spaces, under harsh conditions, or of moving bodies such as drive shafts. The non-linear response of the sensor induces easily detectable harmonics of the base frequency of excitation. These harmonics may advantageously be measured as well.

A TMR sensor that includes a free layer having at least one B-containing (BC) layer made of CoFeB, CoFeBM, CoB, COBM, or CoBLM, and a plurality of non-B containing (NBC) layers made of CoFe, CoFeM, or CoFeLM is disclosed where L and M are one of Ni, Ta, Ti, W, Zr, Hf, Tb, or Nb. One embodiment is represented by (NBC/BC)_n where n≧2. A second embodiment is represented by (NBC/BC)_n/NBC where n≧1. In every embodiment, a NBC layer contacts the tunnel barrier and NBC layers each with a thickness from 2 to 8 Angstroms are formed in alternating fashion with one or more BC layers each 10 to 80 Angstroms thick. Total free layer thickness is<100 Angstroms. The free layer configuration described herein enables a significant noise reduction (SNR enhancement) while realizing a high TMR ratio, low magnetostriction, low RA, and low Hc values.

The invention discloses iron-based nanocrystalline soft-magnetic alloy with excellent high-frequency performance and a preparation method thereof. The expression of the alloy is FeaSibPcCuxMy, wherein a, b, c, x and y respectively represent the atomic percent content of corresponding compositions and satisfy the following conditions: 70<=a<=85, 5<=b<=15, 5<=c<=18, 0.0001<=x<=3, 0<=y<=5, a+b+c+x+y=100%, and M is one or more of Zr, Ti, Ta, Hf, Nb, V, W, Mo, Mn, Cr, Re, Zn, In, As, Sb, Bi, Ca, platinum group elements, rare earth elements, N, Sn, Ge, Ga and Al. The alloy is a nanocrystalline soft-magnetic alloy band prepared by employing a single-roller quick-cooling method under the conditions of high vacuum and argon protection. The alloy does not contain B elements, is good in soft magnetic property, high in thermal stability, low in high-frequency loss and low in magnetostriction coefficient.