32results about How to "Improving Q" patented technology

An integrated semiconducting device comprises a semiconducting substrate, a plurality of grounding strips disposed above the substrate in a lower metal level of the semiconducting device, an inductor positioned in an upper metal level of the semiconducting device, and a plurality of conducting vias connected to and extending away from the grounding strips towards the inductor. The inductor, conducting via, ground strips structure forms a Faraday cage that acts as a shield against electromagnetic radiation. The number and placement of the conductive vias are adjustable and can be optimized based on the relative importance of maximizing the quality factor Q of the inductor or minimizing the capacitance between the inductor and ground.

A piezoelectric thin-film resonator includes a first excitation electrode and a second excitation electrode, the first excitation electrode being disposed opposite the second excitation electrode; a piezoelectric thin film disposed between the first excitation electrode and the second excitation electrode; and a substrate supporting the first excitation electrode, the substrate being composed of a LiTaO3 single crystal or a LiNbO3 single crystal, the first excitation electrode including an acoustic reflecting layer, the acoustic reflecting layer containing (a) at least one epitaxially grown first sublayer being composed of a conducting material and having a relatively high acoustic impedance; and (b) at least one epitaxially grown second sublayer being composed of another conducting material and having a relatively low acoustic impedance.

An embodiment of the present invention provides a device, comprising a multilayered tunable dielectric capacitor, wherein said multilayers of tunable dielectric are adapted to be DC biased to reduce the dielectric constant; and wherein the DC bias is arranged so that the number of layers of tunable dielectric biased positively is equal to the number of layers of tunable dielectric biased negatively.

An embodiment of the present disclosure provides a method to reduce acoustic vibration in a multilayered capacitor stimulated by a radio frequency signal by placing a first capacitor layer adjacent to second capacitor layer sharing a common electrode such that the acoustic vibration is reduced by applying one or more anti-acoustic vibration bias voltages to the multilayered capacitor. Other embodiments are disclosed.

The invention comprises a technique and associated mechanisms by which dielectric resonator circuits, such as filters, can be tuned in both frequency, bandwidth or both without the need for irises, tuning screws and / or tuning plates. In accordance with the invention, the positions of the dielectric resonators are adjustable relative to each other within the cavity in multiple ways, including vertically and horizontally. The dielectric resonators also may tilt relative to each other. Furthermore, an off-center longitudinal hole can be machined in one or more of the dielectric resonators so as to make the electromagnetic field of the resonator non-uniform so that the dielectric resonator can be rotated about its longitudinal axis to alter the coupling between dielectric resonators. In accordance with another aspect of the invention, frequency tuning can be accomplished by using two separate dielectric resonators adjacent each other, one on top of the other, and adjusting the vertical spacing therebetween to achieve the desired center frequency within that dielectric resonator pair.

An inductor of the present invention includes a plurality of insulating layers being stacked and coil patterns respectively provided on predetermined layers of the insulating layers. The coil patterns are provided on at least two of the insulating layers, and electrically connected to each other. With this arrangement, it is possible to improve Q of the inductor without increasing the size of the inductor.

A filter includes a resonant unit which has a plurality of resonators respectively formed of each microstrip line and connected in cascade with one another, and a coupling unit which has at least one inter-resonator coupling of the resonant unit in an area within a range of ±45° (⅛-wavelength) in an electrical length from a voltage maximum point at a intermediate of the microstrip line.

Apparatus comprises a tuning fork having first and second tines, a first magnet disposed on the first tine, and a second magnet disposed on the second tine. In one embodiment the magnets comprise permanent magnets; in another they comprise electromagnets. In a preferred embodiment the magnets have magnetic moments oriented essentially parallel to the axis of the tines and anti-parallel to one another. In operation, the apparatus is made to oscillate at or near its resonant frequency, and in the presence of a magnetic field a parameter of the oscillation (e.g., its frequency, phase or amplitude) is altered in a fashion that allows the magnitude or direction of the magnetic field to be determined. In a preferred embodiment, the tuning fork is disposed within a vacuum enclosure, which increases the Q of the apparatus.

An opto-electronic oscillator circuit, including: an opto-electronic circuit loop including an optical modulator that receives a first electrical signal and produces an optical output signal coupled with an optical resonator, a photodetector circuit optically coupled with the optical resonator, and a phase shifter coupled with the photodetector circuit for producing a phase shifted output signal that is fed back as the first electrical signal; an optical loop comprising the optical coupling of the optical resonator with the photodetector; and an electrical feedback circuit loop for coupling the first electrical signal with the photodetector circuit.

An electronic component includes first and second resonators provided within a layered substrate including stacked dielectric layers. The first resonator includes resonator-forming conductor layers of a first type and a second type. The resonator-forming conductor layers of the first type and the second type are reversed in relative positions of the short-circuited end and the open-circuited end, and are alternately arranged in the stacking direction of the dielectric layers. An input terminal is connected to all of the resonator-forming conductor layers of the first type. The second resonator includes resonator-forming conductor layers of a third type and a fourth type. The resonator-forming conductor layers of the third type and the fourth type are reversed in relative positions of the short-circuited end and the open-circuited end, and are alternately arranged in the stacking direction of the dielectric layers. An output terminal is connected to all of the resonator-forming conductor layers of the third type.