1224 results about "Interdigital transducer" patented technology

Aspects of this disclosure relate to an acoustic wave resonator with a patterned conductive layer. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The interdigital transducer electrode can include a bus bar and fingers extending from the bus bar. The fingers can each include an edge portion and a body portion. The patterned conductive layer can overlap the edge portions of the fingers. The patterned conductive layer can conductive portions that are spaced apart from each other. A portion of the temperature compensation layer can be positioned between the patterned conductive layer and the interdigital transducer electrode.

Aspects of this disclosure relate to an acoustic wave device with transverse mode suppression. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. The mass loading strip can have a sidewall that is tapered inwardly from a bottom side of the mass loading strip to a top side of the mass loading strip. The top side can be shorter than the bottom side.

Aspects of this disclosure relate to acoustic wave devices on stacked die. A first die can include first acoustic wave device configured to generate a boundary acoustic wave. A second die can include a second acoustic wave device configured to generate a second boundary acoustic wave, in which the second die is stacked with the first die. The first acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and high acoustic velocity layers on opposing sides of the piezoelectric layer. The high acoustic velocity layers can each have an acoustic velocity that is greater than a velocity of the boundary acoustic wave.

An acoustic wave element is disclosed. The acoustic wave element can include a piezoelectric layer that includes aluminum nitride. The acoustic wave element can also include a diamond like carbon layer. The acoustic wave element can further include an interdigital transducer electrode that is positioned on the piezoelectric layer. The piezoelectric layer is positioned between the interdigital transducer electrode and the diamond like carbon layer. The acoustic wave element is configured to generate a Lamb wave having a wavelength of λ.

The invention provides a transverse excitation film bulk acoustic resonator and a preparation method thereof, and belongs to the technical field of acoustic resonators. The transverse excitation film bulk acoustic resonator comprises a substrate, a piezoelectric layer located on the substrate and an interdigital transducer located on the piezoelectric layer. A cavity is formed between the substrate and the piezoelectric layer; the interdigital transducer comprises an interdigital electrode; the piezoelectric layer is provided with at least one groove or at least one first through hole, and at least one part of the groove or the first through hole is covered by the interdigital electrode; second through holes are formed in the positions, located on the two sides of the interdigital transducer, of the piezoelectric layer in the direction perpendicular to the extending direction of the interdigital electrode and parallel to the piezoelectric layer. And the second through hole is communicated with the cavity. A part of the contact area of the interdigital electrode and the piezoelectric layer is hollowed out, so that the contact area of the interdigital electrode and the piezoelectric layer is reduced, the stray mode is reduced, and the quality factor of the device is increased.

Dispersive delay lines are disclosed. The dispersive delay line can include a piezoelectric substrate having a first interdigital transducer electrode on a first region of the piezoelectric substrate and a second interdigital transducer electrode on a second region of the piezoelectric substrate. The dispersive delay line is arranged such that an acoustic wave is configured to propagate from the first interdigital transducer electrode to the second interdigital transducer electrode though a third region of the piezoelectric substrate. An additional material positioned on the third region of the piezoelectric substrate can impact acoustic wave propagation velocity. Related radio frequency modules, wireless communications devices, and methods are disclosed.

The invention discloses a surface acoustic wave device, which comprises a substrate, a first dielectric layer, a piezoelectric layer, an interdigital transducer and a second dielectric layer, the first dielectric layer is arranged on the substrate; the piezoelectric layer is arranged on the first dielectric layer; the interdigital transducer is arranged on the surface of the piezoelectric layer, an overlapping area is formed between the two bus bars in the extending direction of the electrode fingers, a gap area is formed between the overlapping area and the bus bars, and the gap area is adjacent to the ends, close to the overlapping area, of the bus bars; the second dielectric layer is located in at least one gap region and covers the piezoelectric layer and the electrode fingers located in the gap region; wherein the propagation speed of the sound waves in the first dielectric layer and the propagation speed of the sound waves in the second dielectric layer are larger than the propagation speed of the sound waves in the piezoelectric layer, and the thickness of the first dielectric layer and the thickness of the second dielectric layer meet the condition that h2 is smaller than or equal to 0.3 h1. The surface acoustic wave device solves the problem that the Q value of the surface acoustic wave device cannot be improved and the high-frequency impure-mode suppression effect near the anti-resonance point cannot be improved in the prior art.

The invention provides a wireless passive surface acoustic wave temperature, humidity and pressure sensor and a preparation method thereof, and belongs to the field of surveying and mapping devices. The interdigital transducer is arranged in the middle of the three areas; each pair of reflecting gratings is arranged on the two sides of the interdigital transducer; the resonant frequency of the resonant acoustic wave sensors is adjusted by adjusting the interdigital period of each interdigital transducer and the period of the reflecting grating, and the three resonant acoustic wave sensors are made to detect the surface temperature, the surface humidity and the surface pressure respectively; and the coating is coated on the surface of the area for detecting the surface humidity. Different structural designs are selected based on the surface acoustic wave principle, the resonant frequency of the resonant sensor is adjusted by changing the interdigital period of the interdigital transducer and the period of the reflecting grating, and multi-parameter detection of temperature, humidity and pressure is achieved on the same substrate.

An acoustic wave device is disclosed. The acoustic wave device can include a multilayer piezoelectric substrate and an interdigital transducer electrode over the multilayer piezoelectric substrate. The interdigital transducer electrode includes a first layer and a second layer over the first layer. The interdigital transducer electrode has a tilt angle of at least 12 degrees. The acoustic wave device being configured to generate a surface acoustic wave having a wavelength L.

A method of forming an acoustic wave device is disclosed. The method can include providing a structure having a support substrate that includes a first substrate portion, a second substrate portion, and a third substrate portion between the first portion and the second portion, a piezoelectric layer that includes a first portion over the first substrate portion and a second portion over the second substrate portion, a first interdigital transducer electrode on the first portion of the piezoelectric layer, and a second interdigital transducer electrode on the second portion of the piezoelectric layer. the method can also include etching at least a portion of the piezoelectric layer such that a region over the third substrate portion is free from the piezoelectric layer.

Disclosed are polarization-inverted higher-order plate-mode resonators and methods for making the same. In an aspect, a plate-mode resonator includes a first piezoelectric layer having a first crystal orientation specified by a first set of Euler angles α1, β1, and γ1, a dielectric layer disposed on a top surface of the first piezoelectric layer, a second piezoelectric layer, disposed on a top surface of the dielectric layer, having a second crystal orientation specified by a second set of Euler angles α2, β2, and γ2, wherein az is approximately equal to α1, wherein a difference between β2 and β1 is approximately 180 degrees, and wherein γ2 is approximately equal to γ1, and a metallization structure disposed on a top surface of the second piezoelectric layer, the metallization structure comprising at least one interdigital transducer.

A high-frequency acoustic wave resonator and a manufacturing method therefor, relating to the field of microelectronic devices. The high-frequency acoustic wave resonator comprises a support substrate (1), a piezoelectric film (2) and interdigital transducers (3) which are sequentially stacked from bottom to top. The sound velocity of the support substrate (1) is not less than 5000 m / s; a target mode of the high-frequency acoustic wave resonator is a quasi-bulk wave mode generated by longitudinal electric field excitation; the thickness of each interdigital transducer (3) is inversely proportional to the material density of the interdigital transducer (3); the sound velocity in the target mode is less than the sound velocity of the support substrate (1). On the basis of a heterogeneous integrated substrate, the structure of the acoustic wave resonator is simplified, and the ohmic loss is reduced and the electromechanical coupling coefficient in a high-order mode is improved.

The invention relates to the technical field of surface acoustic wave devices, and discloses a lithium tantalate single crystal film-based Loff wave photonic crystal resonator, which comprises a functional substrate and a piezoelectric film layer on the upper surface of the functional substrate, an interdigital transducer is arranged in the middle area of the upper surface of the piezoelectric film layer, and photonic crystals are arranged on the two sides of the interdigital transducer; the piezoelectric thin film layer is a lithium tantalate single crystal thin film, and the tangential direction of the lithium tantalate single crystal thin film is any one of Y cuts, including 0-degree Y, 36-degree Y, 42-degree Y, 50-degree Y, 64-degree Y and 128-degree Y cuts. The photonic crystal is used for replacing a reflecting grating in a traditional surface acoustic wave resonator, higher sound velocity and lower longitudinal loss are achieved through a material system constructed by combining the functional substrate and the lithium tantalate single crystal film, and the photonic crystal resonator has the advantages of being simple in structure, small in size and easy to prepare and integrate. And compared with a Bragg reflection grating resonator with the same size, the resonator has a higher Q value.

A surface acoustic wave resonator comprises a multi-layer piezoelectric substrate including a carrier substrate, a layer of a first dielectric material disposed on the carrier substrate, and a layer of piezoelectric material disposed on the layer of the first dielectric material, interdigital transducer electrodes disposed on the layer of piezoelectric material and including interleaved electrode fingers, and a layer of a second dielectric material disposed on a central interleaved region of the interleaved electrode fingers, gap regions of the interdigital transducer electrodes being either free of the layer of the second dielectric material or having a thinner layer of the second dielectric material than the central interleaved region to reduce spurious signals in an admittance curve of the surface acoustic wave resonator.

A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate, a piezoelectric layer over the support substrate, a temperature compensation structure between the support substrate and the piezoelectric layer, an interdigital transducer electrode in electrical communication with the piezoelectric layer. The temperature compensation structure includes a material having a lower acoustic velocity and higher permittivity than silicon oxide.

An acoustic wave device, a radio frequency filter and an electronics module are provided. The acoustic wave device, comprises a layer of piezoelectric material, a pair of interdigital transducer electrodes disposed on an upper surface of the layer of piezoelectric material, each interdigital transducer electrode including a bus bar and a plurality of electrode fingers extending from the bus bar through a central region of the interdigital transducer electrode towards an edge region of the interdigital transducer electrode, each of the plurality of electrode fingers having a width in a direction perpendicular to the extension of the electrode fingers that is smaller in the edge regions than in the central regions, and trench portions located in the upper surface of the layer of piezoelectric material, the trench portions overlapping with the edge regions of the interdigital transducer electrodes. The acoustic wave device provides effective suppression of transverse modes.

A filter device includes a filter circuit including first and second terminals and series arm resonators along a series arm connecting the first terminal and the second terminal, and an additional circuit connected in parallel at least some of the series arm resonators. The additional circuit includes first, second, and third interdigital transducer electrodes. The first interdigital transducer electrode is connected to a first node at one end portion of a series arm resonator having a lowest anti-resonant frequency of the series arm resonators, the second interdigital transducer electrode is connected to a second node having a potential different from a potential of the first node, the third interdigital transducer electrode is connected to a third node having a potential different from the potentials of the first and second nodes, and the first and second nodes are closer to the first terminal than the third node.

A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate, a piezoelectric layer over the support substrate, a temperature compensation structure between the support substrate and the piezoelectric layer, and an interdigital transducer electrode in electrical communication with the piezoelectric layer. The temperature compensation structure includes a germanium oxide layer.

The invention relates to the technical field of fault detection, in particular to a high-voltage connector loosening fault detection method and device and an automobile, and the method comprises the following steps: forming a surface acoustic wave resonator array based on an interdigital transducer array, an acoustic wave resonator and a flexible waveguide; butting a signal source radio frequency cable with the pin interdigital electrode chip, triggering data acquisition, performing Fourier transform on original data, and judging the loosening risk of the connector according to each parameter threshold value; carrying out three-dimensional modeling on the connector plugging interface, carrying out modal analysis on the model, and obtaining surface acoustic wave frequencies, group velocities and phase distribution under different pre-tightening forces so as to identify a contact force abnormal region; based on a multi-stage early warning mechanism, rapid locking is achieved through electrorheological fluid, and displacement is finely adjusted through a magnetostrictive rod. According to the invention, the loosening hidden danger can be quickly and accurately locked, a tight protection system is constructed by multi-stage early warning and mechanical self-locking, and the loosening risk of the high-voltage connector can be greatly reduced from early warning to active intervention.

The invention discloses a sewage heavy metal ion detection device, which belongs to the technical field of sewage detection, and comprises a sensor module and a microfluidic module, the sensor module comprises a Loff wave surface acoustic wave device, the Loff wave surface acoustic wave device comprises a resonance area and two Loff wave interdigital transducers, the resonance area is located between the two Loff wave interdigital transducers, and the resonance area is covered with a heavy metal ion adsorption film; the micro-fluidic module comprises a micro-channel system and a Rayleigh wave surface acoustic wave device, the micro-channel system comprises a dropwise adding tank, a micro-channel and a waste liquid tank which are communicated in sequence, the micro-channel is provided with an experimental area overlapped with the resonance area, and the Rayleigh wave surface acoustic wave device is used for driving sewage to move from the dropwise adding tank to the waste liquid tank. By combining a microfluidic technology and a surface acoustic wave technology, heavy metal ions, especially lead ions, in sewage can be rapidly, accurately and conveniently monitored.

The invention provides a manufacturing method of a temperature compensation type surface acoustic wave resonator. The manufacturing method comprises the following steps: providing a substrate; manufacturing an interdigital transducer on the surface of one side of the substrate; the interdigital transducer comprises a bus bar and a plurality of long-finger electrodes; manufacturing a first load structure on one side, far away from the substrate, of the long-finger electrode; manufacturing a second load structure on one side, far away from the long-finger electrode, of the first load structure; etching the second load structure to form at least one hollow area and a metal wire at the periphery of the hollow area; and a temperature compensation layer is manufactured on the surface of one side, far away from the long-finger electrode, of the interdigital transducer. By arranging the first load structure, the propagation speed of the surface acoustic wave can be changed, so that the transverse mode can be inhibited, and the Q value of the temperature compensation type surface acoustic wave resonator is improved. According to the invention, the second load structure comprising at least one hollow area is arranged, so that a heat conduction channel is enlarged, the heat dissipation capability of the resonator can be improved on the premise of miniaturization, and the power resistance capability of the filter is improved.

A dual mode surface acoustic wave (SAW) filter includes a piezoelectric substrate, a pair of reflectors disposed on the piezoelectric substrate, and N input and output interdigital transducers (IDTs) disposed on the piezoelectric substrate and between the pair of reflectors and alternately arranged in a lateral direction. Each IDT includes a pair of comb electrodes with a plurality of electrode fingers, adjacent electrode fingers pointing in opposite directions. The total number of electrode fingers in each IDT is an odd number greater than or equal to 3. The invention also discloses a receiving filter and a duplexer.

An acoustic wave device includes a piezoelectric film and an IDT electrode on the piezoelectric film. The IDT electrode includes first and second busbars, at least one first electrode finger, and at least one second electrode finger. When an overlap region is defined as a region in which the first and second electrode fingers overlap each other in an acoustic wave propagation direction, points A2, B2, C2, and D2, defined as follows, are all outside the cavity when, at the points A2, B2, C2, and D2, xa>about 25 μm, ya>about 25 μm, xb>about 25 μm, yb>about 25 μm, xc>about 25 μm, yc>about 25 μm, xd>about 25 μm, and yd>about 25 μm.

Provided in the present invention are a surface acoustic wave resonator and a manufacturing method therefor. An interdigital transducer comprises a plurality of interdigital electrodes and two busbar groups connected to the interdigital electrodes. In each busbar group, a busbar close to an interdigital electrode is arranged at an angle relative to the normal direction of the interdigital electrode, thereby enabling the lateral mode to be inhibited. Furthermore, one end of the interdigital electrode is provided with a mass block, thereby enabling the sound velocity at the end of the interdigital electrode to be reduced. Furthermore, each busbar group comprises at least two busbars, and adjacent busbars are connected, so that energy can be limited in a resonant cavity, inhibiting energy leakage, ultimately resulting in a significant increase in the quality factor.

Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a surface. A back surface of a single-crystal piezoelectric plate is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on a front surface of the piezoelectric plate with interleaved IDT fingers of the IDT disposed on the diaphragm. Back-side fingers are formed the back surface of the diaphragm.

Acoustic resonator devices, filters, and methods are disclosed. An acoustic resonator includes a substrate and a lithium niobate (LN) plate having front and back surfaces and a thickness ts. The back surface is attached to a surface of the substrate. A portion of the LN plate forms a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the LN plate with interleaved fingers of the IDT disposed on the diaphragm. The LN plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic wave in the diaphragm. Euler angles of the LN plate are [0°, β, 0°], where 0≤β≤60°. A thickness of the interleaved fingers of the IDT is greater than or equal to 0.8 ts and less than or equal to 2.0 ts.

An acoustic wave device, and an acoustic wave filter and electronics module including the same. The acoustic wave device comprises a first interdigital transducer electrode having a first bus bar and a first plurality of electrode fingers extending from the first bus bar, the first bus bar having a width of 3 μm or less in a direction parallel to the extension of the first plurality of electrode fingers, and a second interdigital transducer electrode having a second bus bar and a second plurality of electrode fingers extending from the second bus bar and interleaved with the first plurality of electrode fingers, the second bus bar having a width of 3 μm or less in a direction parallel to the extension of the second plurality of electrode fingers. The acoustic wave device allows for improvements in power durability when used in an acoustic wave filter, without an increase in size of the acoustic wave filter.

Disclosed is a surface acoustic wave filter for suppressing a spurious component caused by a lateral mode, which suppresses a spurious component caused by an unnecessary lateral mode in a frequency band higher than an anti-resonant frequency or resonant frequency by having a higher sound velocity at a dummy electrode than at an interdigital transducer (IDT) electrode. The device comprises a substrate, and a supporting substrate, an energy limiting layer and a piezoelectric layer are stacked on the substrate in sequence. The first bus bar and the second bus bar extend in a first direction on the substrate and are separated from each other in a second direction perpendicular to the first direction; a plurality of first and second IDT electrodes alternately extending from the first and second bus bars in the second direction and spaced apart from each other in the first direction; a second dummy electrode extending from the second bus bar to face an end portion of each of the plurality of first IDT electrodes extending from the first bus bar; a first dummy electrode extends from the first bus bar to face an end of each of the plurality of second IDT electrodes extending from the second bus bar, a sound velocity at the dummy electrode being higher than a sound velocity at the plurality of IDT electrodes.

A multimode longitudinally coupled surface acoustic wave resonator is disclosed. The multimode longitudinally coupled surface acoustic wave resonator can include a first interdigital transducer electrode that is positioned over a piezoelectric layer. The first interdigital transducer electrode includes fingers having a first pitch. The multimode longitudinally coupled surface acoustic wave resonator can also include first and second sets of reflectors that are positioned over the piezoelectric layer. The first and second sets of reflectors include a first number of reflectors having a second pitch and a second number of reflectors having a third pitch, respectively. The first pitch is greater than the second pitch. The multimode longitudinally coupled surface acoustic wave resonator can further include a second interdigital transducer electrode that is positioned over the piezoelectric layer and between the first interdigital transducer electrode and the first set of reflectors. The second interdigital transducer electrode includes fingers having a fourth pitch.

The utility model discloses a surface acoustic wave device and a radio frequency front-end module. The surface acoustic wave device comprises an interdigital transducer, wherein the interdigital transducer comprises a first bus bar and a second bus bar which are oppositely arranged, an electrode finger and a plurality of gap electrodes; in the extending direction of the electrode fingers, an overlapping area is formed between the first bus bar and the second bus bar, a first area is formed between the overlapping area and the first bus bar, a second area is formed between the overlapping area and the second bus bar, and the first area and the second area are adjacent to the first bus bar and the second bus bar respectively; the plurality of gap electrodes are arranged in at least one of the first area and the second area, and the plurality of gap electrodes, the bus bars and the electrode fingers are arranged at intervals; wherein the plurality of gap electrodes form a first curve in the arrangement direction of the electrode fingers. According to the invention, the Q value near the anti-resonance point can be improved while the inhibition effect of the transverse mode is improved.