772 results about "Interdigital transducer" patented technology

Aspects of this disclosure relate to an acoustic wave device with transverse mode suppression. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. The mass loading strip can have a sidewall that is tapered inwardly from a bottom side of the mass loading strip to a top side of the mass loading strip. The top side can be shorter than the bottom side.

Aspects of this disclosure relate to acoustic wave devices on stacked die. A first die can include first acoustic wave device configured to generate a boundary acoustic wave. A second die can include a second acoustic wave device configured to generate a second boundary acoustic wave, in which the second die is stacked with the first die. The first acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and high acoustic velocity layers on opposing sides of the piezoelectric layer. The high acoustic velocity layers can each have an acoustic velocity that is greater than a velocity of the boundary acoustic wave.

An acoustic wave device is disclosed. The acoustic wave device can include a multilayer piezoelectric substrate and an interdigital transducer electrode over the multilayer piezoelectric substrate. The interdigital transducer electrode includes a first layer and a second layer over the first layer. The interdigital transducer electrode has a tilt angle of at least 12 degrees. The acoustic wave device being configured to generate a surface acoustic wave having a wavelength L.

A method of forming an acoustic wave device is disclosed. The method can include providing a structure having a support substrate that includes a first substrate portion, a second substrate portion, and a third substrate portion between the first portion and the second portion, a piezoelectric layer that includes a first portion over the first substrate portion and a second portion over the second substrate portion, a first interdigital transducer electrode on the first portion of the piezoelectric layer, and a second interdigital transducer electrode on the second portion of the piezoelectric layer. the method can also include etching at least a portion of the piezoelectric layer such that a region over the third substrate portion is free from the piezoelectric layer.

A surface acoustic wave resonator comprises a multi-layer piezoelectric substrate including a carrier substrate, a layer of a first dielectric material disposed on the carrier substrate, and a layer of piezoelectric material disposed on the layer of the first dielectric material, interdigital transducer electrodes disposed on the layer of piezoelectric material and including interleaved electrode fingers, and a layer of a second dielectric material disposed on a central interleaved region of the interleaved electrode fingers, gap regions of the interdigital transducer electrodes being either free of the layer of the second dielectric material or having a thinner layer of the second dielectric material than the central interleaved region to reduce spurious signals in an admittance curve of the surface acoustic wave resonator.

A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate, a piezoelectric layer over the support substrate, a temperature compensation structure between the support substrate and the piezoelectric layer, an interdigital transducer electrode in electrical communication with the piezoelectric layer. The temperature compensation structure includes a material having a lower acoustic velocity and higher permittivity than silicon oxide.

An acoustic wave device, a radio frequency filter and an electronics module are provided. The acoustic wave device, comprises a layer of piezoelectric material, a pair of interdigital transducer electrodes disposed on an upper surface of the layer of piezoelectric material, each interdigital transducer electrode including a bus bar and a plurality of electrode fingers extending from the bus bar through a central region of the interdigital transducer electrode towards an edge region of the interdigital transducer electrode, each of the plurality of electrode fingers having a width in a direction perpendicular to the extension of the electrode fingers that is smaller in the edge regions than in the central regions, and trench portions located in the upper surface of the layer of piezoelectric material, the trench portions overlapping with the edge regions of the interdigital transducer electrodes. The acoustic wave device provides effective suppression of transverse modes.

A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate, a piezoelectric layer over the support substrate, a temperature compensation structure between the support substrate and the piezoelectric layer, and an interdigital transducer electrode in electrical communication with the piezoelectric layer. The temperature compensation structure includes a germanium oxide layer.

The invention relates to the technical field of fault detection, in particular to a high-voltage connector loosening fault detection method and device and an automobile, and the method comprises the following steps: forming a surface acoustic wave resonator array based on an interdigital transducer array, an acoustic wave resonator and a flexible waveguide; butting a signal source radio frequency cable with the pin interdigital electrode chip, triggering data acquisition, performing Fourier transform on original data, and judging the loosening risk of the connector according to each parameter threshold value; carrying out three-dimensional modeling on the connector plugging interface, carrying out modal analysis on the model, and obtaining surface acoustic wave frequencies, group velocities and phase distribution under different pre-tightening forces so as to identify a contact force abnormal region; based on a multi-stage early warning mechanism, rapid locking is achieved through electrorheological fluid, and displacement is finely adjusted through a magnetostrictive rod. According to the invention, the loosening hidden danger can be quickly and accurately locked, a tight protection system is constructed by multi-stage early warning and mechanical self-locking, and the loosening risk of the high-voltage connector can be greatly reduced from early warning to active intervention.

An acoustic wave device includes a piezoelectric film and an IDT electrode on the piezoelectric film. The IDT electrode includes first and second busbars, at least one first electrode finger, and at least one second electrode finger. When an overlap region is defined as a region in which the first and second electrode fingers overlap each other in an acoustic wave propagation direction, points A2, B2, C2, and D2, defined as follows, are all outside the cavity when, at the points A2, B2, C2, and D2, xa>about 25 μm, ya>about 25 μm, xb>about 25 μm, yb>about 25 μm, xc>about 25 μm, yc>about 25 μm, xd>about 25 μm, and yd>about 25 μm.

Acoustic resonator devices, filters, and methods are disclosed. An acoustic resonator includes a substrate and a lithium niobate (LN) plate having front and back surfaces and a thickness ts. The back surface is attached to a surface of the substrate. A portion of the LN plate forms a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the LN plate with interleaved fingers of the IDT disposed on the diaphragm. The LN plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic wave in the diaphragm. Euler angles of the LN plate are [0°, β, 0°], where 0≤β≤60°. A thickness of the interleaved fingers of the IDT is greater than or equal to 0.8 ts and less than or equal to 2.0 ts.

A multimode longitudinally coupled surface acoustic wave resonator is disclosed. The multimode longitudinally coupled surface acoustic wave resonator can include a first interdigital transducer electrode that is positioned over a piezoelectric layer. The first interdigital transducer electrode includes fingers having a first pitch. The multimode longitudinally coupled surface acoustic wave resonator can also include first and second sets of reflectors that are positioned over the piezoelectric layer. The first and second sets of reflectors include a first number of reflectors having a second pitch and a second number of reflectors having a third pitch, respectively. The first pitch is greater than the second pitch. The multimode longitudinally coupled surface acoustic wave resonator can further include a second interdigital transducer electrode that is positioned over the piezoelectric layer and between the first interdigital transducer electrode and the first set of reflectors. The second interdigital transducer electrode includes fingers having a fourth pitch.

The utility model discloses a surface acoustic wave device and a radio frequency front-end module. The surface acoustic wave device comprises an interdigital transducer, wherein the interdigital transducer comprises a first bus bar and a second bus bar which are oppositely arranged, an electrode finger and a plurality of gap electrodes; in the extending direction of the electrode fingers, an overlapping area is formed between the first bus bar and the second bus bar, a first area is formed between the overlapping area and the first bus bar, a second area is formed between the overlapping area and the second bus bar, and the first area and the second area are adjacent to the first bus bar and the second bus bar respectively; the plurality of gap electrodes are arranged in at least one of the first area and the second area, and the plurality of gap electrodes, the bus bars and the electrode fingers are arranged at intervals; wherein the plurality of gap electrodes form a first curve in the arrangement direction of the electrode fingers. According to the invention, the Q value near the anti-resonance point can be improved while the inhibition effect of the transverse mode is improved.

Aspects and embodiments disclosed herein include a surface acoustic wave device comprising a quartz substrate, a layer of a first lithium-based piezoelectric material disposed on an upper surface of the quartz substrate, a layer of a second lithium-based piezoelectric material formed of a material different from the first lithium-based piezoelectric material disposed on an upper surface of the layer of the first lithium-based piezoelectric material, and interdigital transducer electrodes disposed on an upper surface of the layer of the second lithium-based piezoelectric material.

An acoustic wave filter includes a piezoelectric layer. A first acoustic wave device includes a portion of the piezoelectric layer and a first multi-layer interdigital transducer electrode disposed over the first portion of the piezoelectric layer. Additional acoustic wave devices are coupled to the first acoustic wave device, the additional acoustic wave devices including a second portion of the piezoelectric layer and a plurality of multi-layer interdigital transducer electrodes disposed over the second portion of the piezoelectric layer. At least one of the plurality of multi-layer interdigital transducer electrodes includes a layer that is thinner than a corresponding layer of the same material of the first multi-layer interdigital transducer electrode of the first acoustic wave device.

The invention discloses a surface acoustic wave resonator and a filter. The surface acoustic wave resonator comprises a piezoelectric layer; the electrode layer is arranged on the piezoelectric layer; the electrode layer comprises an interdigital transducer; the interdigital transducer comprises two interdigital electrodes which are oppositely arranged in a first direction; each interdigital electrode comprises a bus bar, a plurality of interdigital strips which are connected with the bus bar, extend in the first direction and are arranged in the second direction, and a plurality of sinking false fingers which are positioned on one side, far away from the bus bar, of each interdigital strip and extend in the first direction; the first direction intersects with the second direction; and each sinking false finger sinks into the piezoelectric layer. According to the technical scheme, clutters of a transverse mode can be effectively restrained, meanwhile, the process steps are simplified, and device miniaturization is facilitated.

An acoustic wave device includes a support, a piezoelectric layer, an IDT electrode including first and second busbars and first and second electrode fingers, and a dielectric film provided on the piezoelectric layer so as to overlap at least a portion of the IDT electrode in plan view. When a thickness of the piezoelectric layer is d and a center-to-center distance between centers of adjacent ones of the electrode fingers is p, d / p is less than or equal to about 0.5. A cavity that opens on a side of the piezoelectric layer is provided in the support. The IDT electrode includes an intersection region, and first and second gap regions. The dielectric film is provided at at least a portion of the first and second gap regions, and a thermal conductivity of the dielectric film is higher than a thermal conductivity of the piezoelectric layer.

The invention relates to the technical field of filters, and discloses a resonator and a surface acoustic wave filter, and the resonator comprises an interdigital transducer and a transverse strip structure. The interdigital transducer comprises a first bus bar, a second bus bar, a plurality of first finger bars and a plurality of second finger bars; the first bus bar and the second bus bar are oppositely arranged, the same ends of the plurality of first finger bars are connected with one side, close to the second bus bar, of the first bus bar, and the same ends of the plurality of second finger bars are connected with one side, close to the first bus bar, of the second bus bar; the transverse strip structure is arranged in a target area of the interdigital transducer; the transverse strip structure comprises a plurality of first transverse strips and a plurality of second transverse strips, the first transverse strips and the second transverse strips are arranged in a crossed mode, the adjacent first transverse strips and second transverse strips are distributed in a staggered mode, and the first ends, in the first direction, of the first transverse strips are connected with the third ends, in the first direction, of the second transverse strips. According to the resonator provided by the invention, the Q value of the resonator can be improved while a transverse mode is effectively suppressed.

The invention relates to a laser radar on-chip integrated chip based on acousto-optic modulation, an on-chip acousto-optic scanning method and a laser radar system. A plurality of groups of interdigital transducers are arranged on the lithium niobate film, two groups of chirp IDTs respectively work at a low-frequency band and a high-frequency band, and sound waves at the low-frequency band correspondingly generate a relatively large Bragg deflection angle; and the high-frequency-band sound waves correspondingly generate a relatively small Bragg deflection angle. The two groups of IDTs work cooperatively, so that two-dimensional vector scanning of a dual-frequency broadband can be realized in a chip plane; the pair of focusing IDTs can form a focusing sound field in an action area, so that the light beam subjected to two-dimensional deflection is controllably deflected in the Z direction, and the chip is endowed with the three-dimensional scanning capability. The device is high in diffraction efficiency and low in power consumption; unification of large-range search and high-precision scanning is realized; z-axis deflection is realized by integrating a special focusing type interdigital transducer, a three-dimensional scanning function is realized on a monolithic integrated acousto-optic chip, and the structure is extremely compact.

A multilayer piezoelectric substrate acoustic wave device including an active region having a center region and a border region is disclosed. The acoustic wave device can include a support substrate, a piezoelectric layer over the support substrate, and an interdigital transducer electrode in electrical communication with the piezoelectric layer. The interdigital transducer electrode includes a bus bar and a finger extending from the bus bar. The finger in the border region has a first portion, a second portion between the center region and the first portion, and a third portion between the center region and the second portion. The first portion and the third portion have liner densities greater than liner densities of the second portion and the finger in the center region.

An acoustic wave device (10) using a surface acoustic wave, comprising: a substrate (11) containing 70 mass% or more of silicon dioxide (SiO2); a piezoelectric thin film (12) formed of LiTaO3 crystal or LiNbO3 crystal disposed on the substrate (11); and an interdigital transducer electrode (13) arranged in contact with the piezoelectric thin film (12); wherein Euler angle of the substrate (11) and Euler angle of the piezoelectric thin film (12) are selected such that a phase velocity of the surface acoustic wave propagating along the substrate (11) is greater than a phase velocity of the surface acoustic wave propagating along the piezoelectric thin film (12).

An acoustic wave device includes a silicon single crystal baseplate including a main surface, a piezoelectric layer directly or indirectly on the main surface of the silicon single crystal baseplate, and an IDT electrode on the piezoelectric layer and including electrode fingers. The piezoelectric layer is a lithium niobate layer. In the main surface of the silicon single crystal baseplate, a plane orientation is (111). When Euler angles in the main surface of the silicon single crystal baseplate are (φ, θ, ψ), the ψ in the Euler angles of the silicon single crystal baseplate is about −30 degrees <ψ< about 30 degrees.

The invention discloses a surface acoustic wave resonator and an electronic device, which are applied to the technical field of surface acoustic waves, an interdigital transducer comprises two outer-layer bus bars arranged oppositely and at least two inner-layer bus bars arranged oppositely, the inner-layer bus bars are arranged between the outer-layer bus bars, and the outer-layer bus bars and the inner-layer bus bars are both parallel to the length direction; the inner-layer bus bar is provided with a plurality of first protruding parts protruding out of the edge of the inner-layer bus bar in the width direction, the first protruding parts are arranged in the length direction, so that an inner-layer edge sound velocity area is formed on at least one side of the inner-layer bus bar based on the first protruding parts, and an inner-layer sound velocity area is formed on the basis of the inner-layer bus bar; the sound velocity of the inner-layer edge sound velocity area is smaller than that of the inner-layer sound velocity area. The sawtooth structure formed by the plurality of first protruding parts can enable sound waves to generate diffuse reflection during transverse propagation, so that the Q value of a transverse clutter mode is reduced, and the generation of a transverse mode is effectively inhibited.

A multilayer piezoelectric substrate acoustic wave device including an active region having a center region and a border region is disclosed. The acoustic wave device can include a support substrate, a piezoelectric layer over the support substrate, and an interdigital transducer electrode in electrical communication with the piezoelectric layer. The piezoelectric layer has a trench in the border region. The interdigital transducer electrode includes a bus bar and a finger extending from the bus bar. The finger in the border region has a first portion with a first width, a second portion with a second width between the center region and the first portion, and a third portion with a third width between the center region and the second portion. The second width is narrower than the first width and the third width.

An acoustic wave device includes a piezoelectric layer and an interdigital transducer electrode disposed over the piezoelectric layer. The interdigital transducer electrode is thicker in a center region of the interdigital transducer electrode than in a gap region of the interdigital transducer electrode to thereby reduce a mass loading of the interdigital transducer electrode in the gap region. The interdigital transducer electrode has a layer of more dense material disposed of a layer of less dense material.

The invention discloses a surface acoustic wave resonator and a filter. The surface acoustic wave resonator comprises a substrate; the interdigital transducer is positioned on one side of the substrate; the reflecting grating and the interdigital transducer are arranged on the same layer, and the reflecting grating is located on the two sides of the interdigital transducer in the first direction; the plurality of reflecting gratings are arranged along a first direction and extend along a second direction; in the first direction, a reflecting grating gap is formed between any two adjacent reflecting gratings; the first direction and the second direction intersect and are parallel to the plane where the substrate is located; the orthographic projection of the acoustic impedance structure on the plane where the substrate is located is at least overlapped with the orthographic projection of the reflecting grating gap on the plane where the substrate is located; the acoustic impedance of the acoustic impedance structure is different from the acoustic impedance of the reflecting grating. By adopting the technical means, the acoustic impedance structure is arranged, and the acoustic impedance of the acoustic impedance structure is different from that of the reflecting grating, so that a stray mode in the resonator can be inhibited, and the performance of the surface acoustic wave resonator is further improved.

The invention discloses a digital acoustic fluidic chip, a preparation method and a multi-dimensional sample processing method, the digital acoustic fluidic chip comprises an upper polar plate and a lower polar plate, and the upper polar plate comprises a glass layer, a coating layer and an upper hydrophobic layer which are arranged in sequence; the lower polar plate comprises a lower hydrophobic layer, a dielectric layer, an electrode layer and a substrate which are arranged in sequence; the electrode layer comprises an EWOD pin electrode, a driving electrode, a sound wave pin electrode and an interdigital transducer; the interdigital transducer comprises a sound field and electric field multiplexing module, a sound standing wave field and thermal field module, a focusing sound field and thermal field module and a sound vortex enrichment module; each driving electrode is connected with one EWOD pin electrode, the two sides of the sound field and electric field multiplexing module, the two sides of the sound standing wave field and thermal field module, the two sides of the focusing sound field and thermal field module and the two sides of the sound vortex enrichment module are all connected with the two sound wave pin electrodes, and one side of the sound field and electric field multiplexing module is further connected with one EWOD pin electrode. The method has the advantages of multi-dimensional sample treatment and high-flexibility treatment.

A method for fabricating a sensor device that includes an integrated sensor assembly having a surface acoustic wave (SAW) sensor disposed on a piezoelectric substrate. The SAW sensor is adapted to measure an environmental condition of an environment in response to an RF signal. The SAW sensor includes an interdigitated transducer (IDT) formed on a substrate having at least a layer of a piezoelectric material. The SAW sensor includes either one or more SAW reflectors of a second IDT formed on the piezoelectric material. The SAW sensor further includes an RF antenna, a matching circuit and a waveguide are formed on the piezoelectric material. The SAW sensor and the RF antenna are integrated with one another on the piezoelectric material.

A surface acoustic wave device and a method of forming the surface acoustic wave device are disclosed. The surface acoustic wave device can include a piezoelectric layer with a bus bar region having a first thickness and a finger region having a second thickness less than the first thickness. The surface acoustic wave device can include an interdigital transducer electrode in electrical communication with the piezoelectric layer. The interdigital transducer electrode includes a bus bar and fingers that extend from the bus bar. The bus bar is positioned in the bus bar region and the fingers are positioned in the finger region.

Aspects of this disclosure relate to an acoustic wave device with transverse mode suppression. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. The mass loading strip can have a sidewall that is tapered inwardly from a bottom side of the mass loading strip to a top side of the mass loading strip. The top side can be shorter than the bottom side.