418 results about "Interdigital transducer" patented technology

An acoustic wave device, a radio frequency filter and an electronics module are provided. The acoustic wave device, comprises a layer of piezoelectric material, a pair of interdigital transducer electrodes disposed on an upper surface of the layer of piezoelectric material, each interdigital transducer electrode including a bus bar and a plurality of electrode fingers extending from the bus bar through a central region of the interdigital transducer electrode towards an edge region of the interdigital transducer electrode, each of the plurality of electrode fingers having a width in a direction perpendicular to the extension of the electrode fingers that is smaller in the edge regions than in the central regions, and trench portions located in the upper surface of the layer of piezoelectric material, the trench portions overlapping with the edge regions of the interdigital transducer electrodes. The acoustic wave device provides effective suppression of transverse modes.

An acoustic wave device includes a piezoelectric film and an IDT electrode on the piezoelectric film. The IDT electrode includes first and second busbars, at least one first electrode finger, and at least one second electrode finger. When an overlap region is defined as a region in which the first and second electrode fingers overlap each other in an acoustic wave propagation direction, points A2, B2, C2, and D2, defined as follows, are all outside the cavity when, at the points A2, B2, C2, and D2, xa>about 25 μm, ya>about 25 μm, xb>about 25 μm, yb>about 25 μm, xc>about 25 μm, yc>about 25 μm, xd>about 25 μm, and yd>about 25 μm.

The invention discloses a digital acoustic fluidic chip, a preparation method and a multi-dimensional sample processing method, the digital acoustic fluidic chip comprises an upper polar plate and a lower polar plate, and the upper polar plate comprises a glass layer, a coating layer and an upper hydrophobic layer which are arranged in sequence; the lower polar plate comprises a lower hydrophobic layer, a dielectric layer, an electrode layer and a substrate which are arranged in sequence; the electrode layer comprises an EWOD pin electrode, a driving electrode, a sound wave pin electrode and an interdigital transducer; the interdigital transducer comprises a sound field and electric field multiplexing module, a sound standing wave field and thermal field module, a focusing sound field and thermal field module and a sound vortex enrichment module; each driving electrode is connected with one EWOD pin electrode, the two sides of the sound field and electric field multiplexing module, the two sides of the sound standing wave field and thermal field module, the two sides of the focusing sound field and thermal field module and the two sides of the sound vortex enrichment module are all connected with the two sound wave pin electrodes, and one side of the sound field and electric field multiplexing module is further connected with one EWOD pin electrode. The method has the advantages of multi-dimensional sample treatment and high-flexibility treatment.

A method for fabricating a sensor device that includes an integrated sensor assembly having a surface acoustic wave (SAW) sensor disposed on a piezoelectric substrate. The SAW sensor is adapted to measure an environmental condition of an environment in response to an RF signal. The SAW sensor includes an interdigitated transducer (IDT) formed on a substrate having at least a layer of a piezoelectric material. The SAW sensor includes either one or more SAW reflectors of a second IDT formed on the piezoelectric material. The SAW sensor further includes an RF antenna, a matching circuit and a waveguide are formed on the piezoelectric material. The SAW sensor and the RF antenna are integrated with one another on the piezoelectric material.

A surface acoustic wave device and a method of forming the surface acoustic wave device are disclosed. The surface acoustic wave device can include a piezoelectric layer with a bus bar region having a first thickness and a finger region having a second thickness less than the first thickness. The surface acoustic wave device can include an interdigital transducer electrode in electrical communication with the piezoelectric layer. The interdigital transducer electrode includes a bus bar and fingers that extend from the bus bar. The bus bar is positioned in the bus bar region and the fingers are positioned in the finger region.

Aspects and embodiments disclosed herein include a surface acoustic wave resonator comprising a multilayer piezoelectric substrate and interdigital transducer (IDT) electrodes disposed on an upper surface of the multilayer piezoelectric substrate, the IDT electrodes having at least partially rounded upper sides.

The invention relates to the field of electronic component preparation processes, in particular to a high-performance temperature compensation surface acoustic wave filter and a manufacturing method thereof. An interdigital transducer, wherein the interdigital transducer is located at one side of the piezoelectric substrate; the transition layer is located on the side, away from the piezoelectric substrate, of the interdigital transducer, and the transition layer covers the interdigital transducer and prevents metal elements of the interdigital transducer from diffusing outwards; the functional layer is located on the side, away from the interdigital transducer, of the transition layer, the functional layer covers an active area of a metal finger strip of the interdigital transducer to form a high-sound-velocity area, the end, away from the active area, of the metal finger strip of the interdigital transducer forms a low-sound-velocity area, and a sound velocity difference is formed between the high-sound-velocity area and the low-sound-velocity area; therefore, transverse mode clutters are suppressed; the temperature compensation layer is located on the side, away from the transition layer, of the functional layer, and the temperature compensation layer covers the functional layer and the piezoelectric substrate; lateral mode clutters in TC-SAW are suppressed, and metal diffusion is suppressed at the same time.

Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a surface. A back surface of a single-crystal piezoelectric plate is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on a front surface of the piezoelectric plate with interleaved IDT fingers of the IDT disposed on the diaphragm. Back-side fingers are formed the back surface of the diaphragm.

An acoustic wave device includes a support substrate, a first high acoustic velocity film on the support substrate, a low acoustic velocity film on the first high acoustic velocity film, a second high acoustic velocity film on the low acoustic velocity film, a piezoelectric layer on the second high acoustic velocity film, and an IDT on the piezoelectric layer. Bulk waves propagate in the low acoustic velocity film more slowly than bulk waves propagate in the piezoelectric layer, bulk waves propagate in the first high acoustic velocity film faster than acoustic waves propagate on the piezoelectric layer, and bulk waves propagate in the second high acoustic velocity film faster than or as fast as bulk waves propagate in the first high acoustic velocity film.

An acoustic wave device includes a support with a thickness in a first direction, a piezoelectric layer in the first direction, and an interdigital transducer electrode in the first direction with first electrode fingers in a second direction, a first busbar electrode connected to the first electrode fingers, second electrode fingers in the second direction and facing corresponding ones of the first electrode fingers in a third direction, and a second busbar electrode connected to the second electrode fingers. The support has a hollow adjacent to the piezoelectric layer and at least partially overlapping the interdigital transducer electrode. The piezoelectric layer has a first through hole penetrating the piezoelectric layer between at least one first electrode finger and the second busbar electrode. The first through hole communicates with the hollow, has a length in the third direction, and overlaps a portion of a second electrode finger.

A micro-acoustic filter includes a piezoelectric layer having a crystalline structure that may be laterally excited in a plate mode. The piezoelectric layer is formed on a layer stack that reflects acoustic energy back toward the piezoelectric layer. Acoustic waves are excited in the piezoelectric layer by voltages provided in interdigital transducers (IDTs) on an exposed surface of the piezoelectric layer. The electrode fingers of the IDTs are spaced from the exposed surface rather than being in contact with the exposed surface of the piezoelectric layer to avoid losses and spurious modes. In some examples, the electrode fingers may be supported on one end in a cantilevered configuration to maintain a first distance from the exposed surface of the piezoelectric layer. In some examples, the electrode fingers may also be supported on a second end by a pillar extending the first distance to the exposed surface.

An acoustic wave device includes a support substrate, a multilayer body, and an IDT electrode. The multilayer body includes a lithium tantalate piezoelectric layer and a lithium niobate piezoelectric layer that are laminated, and is on the support substrate. The IDT electrode is on the multilayer body, and includes electrode fingers. When a wavelength of an acoustic wave determined by a pitch of the electrode fingers is denoted as λ, a thickness of the multilayer body is about 0.66λ or less.

An acoustic wave device includes a first IDT electrode on a first main surface of a piezoelectric layer, and a second IDT electrode on a second main surface of the piezoelectric layer. The first IDT electrode includes first and second electrode fingers. The second IDT electrode includes third and fourth electrode fingers. The first and fourth electrode fingers overlap each other with the piezoelectric layer interposed therebetween. The second and third electrode fingers overlap each other with the piezoelectric layer interposed therebetween. A potential of the first electrode finger and that of the fourth electrode finger are opposite to each other. A potential of the second electrode finger and that of the third electrode finger are opposite to each other.

An acoustic resonator is provided that includes a piezoelectric layer, an interdigital transducer (IDT) including a plurality of interleaved fingers on the piezoelectric layer, a substrate, and an acoustic reflector between the piezoelectric layer and the substrate. The acoustic reflector that is on the piezoelectric layer includes alternating first layers of first materials and second layers of second materials. A first acoustic impedance of the first materials is different from a second acoustic impedance of the second materials. A ratio of a pitch of the IDT over a thickness of the piezoelectric layer is less than 10. A first thickness of at least one of the first layers is larger than a quarter of a first wavelength λ1. λ1 is an acoustic wavelength of a shear bulk wave in the at least one of the first layers at a resonance frequency of the transversely-excited bulk acoustic resonator.

An acoustic wave device includes a resonator including a piezoelectric layer including first and second main surfaces opposed to each other, an upper electrode on the first main surface of the piezoelectric layer, and a lower electrode on the second main surface of the piezoelectric layer, and a capacitor including an upper interdigital transducer (IDT) electrode on the first main surface of the piezoelectric layer, and a lower IDT electrode on the second main surface of the piezoelectric layer. The capacitor is connected in parallel with the resonator. The upper IDT electrode and the lower IDT electrode of the capacitor are electrically connected to one another.

The invention discloses a filter and a radio frequency front-end module, and relates to the technical field of radio frequency filtering. The filter comprises a piezoelectric substrate, a first resonator, a second resonator and a dielectric layer. The first resonator and the second resonator are both arranged on the piezoelectric substrate, the first resonator is arranged on one side of the second resonator, a spacing area is formed between the first resonator and the second resonator, and the first resonator and the second resonator both comprise interdigital transducers; the dielectric layer is at least arranged in the spacer region; wherein the propagation speed of sound waves in the dielectric layer is greater than that of the sound waves in the interdigital transducer. According to the invention, surface acoustic waves leaked by the surface acoustic wave devices can be converted into leaky waves, so that mutual interference between the surface acoustic wave devices is effectively reduced, and the performance of the filter is improved.

A longitudinally leaky surface acoustic wave device is disclosed. The longitudinally leaky surface acoustic wave device can include a support substrate, a first solid acoustic mirror over the support substrate, a piezoelectric layer positioned over the first solid acoustic mirror, an interdigital transducer electrode over the piezoelectric layer, and a second solid acoustic mirror over the over the interdigital transducer electrode. The interdigital transducer electrode is configured to generate an acoustic wave that propagates in a lateral direction. The first solid acoustic mirror and the second solid acoustic mirror are arranged to confine acoustic energy of the acoustic wave. The piezoelectric layer can have a cut angle of (90±30, 90±30, 40±30).

A micro-acoustic filter includes a piezoelectric layer (408) having a crystalline structure that may be laterally excited in a plate mode. The piezoelectric layer is formed on a layer stack (410) that reflects acoustic energy back toward the piezoelectric layer. Acoustic waves are excited in the piezoelectric layer by voltages provided in interdigital transducers, IDTs, on an exposed surface (406) of the piezoelectric layer. The electrode fingers (404A, 404B) of the IDTs are spaced (414) from the exposed surface rather than being in contact with the exposed surface of the piezoelectric layer to avoid losses and spurious modes. In some examples, the electrode fingers may be supported on one end (420) in a cantilevered configuration to maintain a first distance from the exposed surface of the piezoelectric layer. In some examples, the electrode fingers may also be supported on a second end by a pillar extending the first distance to the exposed surface.

The invention relates to a filter, a radio frequency front-end module and electronic equipment, the filter comprises a piezoelectric substrate, a first reflecting grating and two interdigital transducers, the first reflecting grating and the two interdigital transducers are arranged on the surface of the piezoelectric substrate, and the two interdigital transducers are respectively arranged on two opposite sides of the first reflecting grating; the first reflecting grating comprises a first finger strip, a second finger strip and a third finger strip which are connected, and the first finger strip and the second finger strip are arranged on the two sides of the third finger strip in the first direction; wherein the distance between the central axis of the third finger strip adjacent to the first finger strip and the central axis of the adjacent first finger strip is a first distance, the distance between the central axis of the third finger strip adjacent to the second finger strip and the central axis of the adjacent second finger strip is a second distance, and the first distance is not equal to the second distance. According to the filter disclosed by the invention, the first interval is unequal to the second interval by adjusting the intervals among the first finger strip, the second finger strip and the third finger strip in the first reflecting grating shared by the two interdigital transducers, so that the Q value of the filter disclosed by the invention is improved.

The invention discloses a surface acoustic wave resonator and a filter. The resonator comprises an interdigital transducer arranged on a piezoelectric substrate, reflecting gratings located on the two sides of the interdigital transducer and at least one laminated protection structure arranged in the outer side area of the reflecting gratings. The laminated protection structure comprises an interdigital capacitor arranged on the surface of the piezoelectric substrate and an organic material layer covering the interdigital capacitor; two bus bars of the interdigital capacitor are electrically connected with two signal ports of the resonator respectively, and the interdigital capacitor is connected with the interdigital transducer in parallel. According to the invention, the anti-ESD capability of the resonator can be effectively improved under the condition of not increasing additional process steps and not changing the electrode structure of the normal working area of the resonator.

A dynamically tunable optical mirror named as a resonant cavity switching (RCS) device and a refractive index modulating (RIM) device are disclosed. The RCS device is comprising a nanoporous piezoelectric III-nitride material layer, such as GaN, AlN, AlScN, AlGaScN or their alloys sandwiched between a high-reflectivity distributed Bragg reflector (DBR) and a lower-reflectivity output DBR. The RIM devise is comprising the nanoporous III-nitride material layer. The nanoporous layer, patterned with interdigital transducers (IDTs), is actuated via surface acoustic waves (SAWs) or electric fields to induce rapid, reversible modulation of its effective refractive index. This enables sub-nanosecond switching between resonant and off-resonant optical states, facilitating efficient energy extraction, optical pulse carving, or phase control.

An acoustic resonator device is provided that includes a substrate having a surface; a piezoelectric layer attached to the surface of the substrate via an intermediate layer, the piezoelectric layer including a portion that is over a cavity in the intermediate layer; a conductor pattern including an interdigital transducer (IDT) on a surface of the piezoelectric layer and having interleaved fingers on the piezoelectric layer; a dielectric layer at least between the interleaved fingers of the IDT; and a dielectric cover over the IDT and the piezoelectric layer, the dielectric cover including a bottom surface, wherein at least a portion of the dielectric cover is attached to a portion of the conductor pattern, wherein the conductor pattern includes at least two metal layers including a first metal layer of the interleaved fingers of the IDT and a second metal layer attached to the dielectric cover.

A device includes a stack of at least two piezoelectric layers configured to propagate a Lamb wave in a mode having an order corresponding to a number of piezoelectric layers of the stack. The stack includes a first piezoelectric layer and a second piezoelectric layer disposed on the first piezoelectric layer. The first piezoelectric layer has a first cut plane orientation, and the second piezoelectric layer has a second cut plane orientation complementary to the first cut plane orientation. The device further includes an interdigitated transducer (IDT) disposed on at least a top surface of the stack or a bottom surface of the stack. In some embodiments, the device is an acoustic resonator. In some embodiments, the device is an acoustic delay line.

The present disclosure relates to a surface acoustic wave (SAW) device with robust metal structures, which at least provide electrically low resistance and mechanically strong connections between different inter digital transducers (IDTs) within the SAW device. Each metal structure includes a metal base section that is formed from a same metal layer as corresponding IDTs, and a metal stack over the metal base section. The metal stack includes a bottom adhesive layer over the metal base section, a bottom conductive layer over the bottom adhesive layer, an intermediate adhesive layer over the bottom conductive layer, a top conductive layer over the intermediate adhesive layer, and a top adhesive layer over the top conductive layer. The bottom and top conductive layers have a higher electrical conductivity than each adhesive layer, while each adhesive layer has a stronger adhesion strength than the bottom and top conductive layers.

The invention discloses a surface acoustic wave filter and a multiplexer surface acoustic wave filter, and the surface acoustic wave filter comprises a first piezoelectric substrate and a first interdigital transducer which is arranged on the first piezoelectric substrate. The first interdigital transducer comprises a first bus bar, a second bus bar, a plurality of first electrode fingers and a plurality of second electrode fingers, the first bus bar and the second bus bar are oppositely arranged, the first electrode fingers are led out from the first bus bar and extend towards the second bus bar, the second electrode fingers are led out from the second bus bar and extend towards the first bus bar, and the first electrode fingers and the second electrode fingers are arranged at intervals; the plurality of first electrode fingers and the plurality of second electrode fingers are mutually overlapped to form a first overlapping area, and the boundary shape of the first overlapping area conforms to a trigonometric function curve in the sound wave propagation direction; and the shapes of the first bus bar and the second bus bar are matched with the boundary shape of the first overlapping region. The technical effects that the transverse mode can be inhibited, and the small-size surface acoustic wave filter can be realized are achieved.

This invention relates to a thin-film bulk acoustic resonator with small lateral excitation and enhanced Q-factor. An acoustic resonator device includes a conductor pattern formed on the surface of a piezoelectric plate. The conductor pattern includes n staggered parallel fingers comprising a first busbar, a second busbar, and an interdigital transducer (IDT), where n is a positive integer. The fingers extend alternately from the first busbar and the second busbar. The first finger and the n'th finger are positioned at opposite ends of the IDT. The conductor pattern also includes a first reflector element adjacent to and parallel to the first finger; and a second reflector element adjacent to and parallel to the n'th finger. When an RF signal is applied between the first busbar and the second busbar, the first reflector element has a substantially the same potential as the first finger, while the second reflector element has a substantially the same potential as the n'th finger.

The invention discloses a surface acoustic wave resonator and a manufacturing method thereof, and the manufacturing method comprises the steps: providing a piezoelectric substrate which comprises a first region and a second region; forming a first metal layer on the piezoelectric substrate, patterning the first metal layer to form a first interdigital transducer in the first region and a first lead connected with the first interdigital transducer, and forming a second lead in the second region; forming a first passivation layer covering the first interdigital transducer, wherein the first passivation layer has a first thickness; and forming a second metal layer covering the first passivation layer, patterning the second metal layer to form a first bonding pad above the first lead in the first region, and forming a second interdigital transducer and a second bonding pad above the second lead in the second region. According to the invention, the lead connected with the second interdigital transducer is formed while the first interdigital transducer is formed, and the first bonding pad and the second bonding pad are formed while the second interdigital transducer is formed, so that the process steps and cost of the bonding pad layer are saved.

Provided is a filter device wherein electric power resistance can be improved.　A filter device according to the present invention comprises a plurality of elastic wave resonators (serial arm resonators S2a, S2b) that share a piezoelectric substrate 2 having a support member 3 and a piezoelectric film that is provided on said support member 3 and includes a piezoelectric layer 6, and each have a functional electrode (IDT electrode 7) that is provided on the piezoelectric film. In each of the plurality of elastic wave resonators, a cavity section 2a is provided in the support member 3 in a location that overlaps with the functional electrode in plan view. The support member 3 and the piezoelectric film are positioned such that a section of the support member 3 and a section of the piezoelectric film face each other with the cavity sections 2a interposed therebetween. The plurality of elastic wave resonators include at least one set of parallel-connected resonators, which are at least two elastic wave resonators that are connected in parallel to each other. The cavity sections 2a of the at least one set of parallel-connected resonators are separated from each other in at least one section by a partition wall 2b, which is a section of the support member 3.

This application provides a surface acoustic wave (SAW) resonator and an electronic device. The SAW resonator includes interdigital transducers; along the SAW propagation direction, the duty cycle of the interdigital transducers gradually decreases, while the finger spacing gradually increases. This gradual decrease in duty cycle and increase in finger spacing along the SAW propagation direction helps reduce the excitation of stray modes and decrease the nonlinear harmonics generated by the coupling of the stray mode strain field E1 and the electrostatic field E2, effectively suppressing the generation of nonlinear harmonics and improving nonlinear effects.