6 results about "MESFET" patented technology

A semiconductor field effect transistor with double gate structure and a manufacturing method thereof, comprising a first gate and a second gate, so that the first gate and the second gate are respectively a bottom gate and a top gate of a field effect tube structure, and the bottom gate and the top gate are respectively arranged as a MOSFET structure and a MESFET structure, due to the advantages of the MOSFET structure and the MESFET structure, the working voltage range of the double gate device is expanded, the control ability of the gate to the channel is increased, the carrier mobility, SS and other parameters of the device are optimized, and the stability of the device is improved. In addition, since the MESFET (JFET) device is more sensitive to the change of the gate bias, the double gate semiconductor field effect transistor in the application can be applied to the sensing field by using this characteristic, thereby increasing the application range.

The application discloses a MESFET device based on flexoelectric effect and photoelectric effect enhancement, which comprises a laser light source, a silicon substrate, an insulating layer, a metal gate electrode, a two-dimensional semiconductor layer, a first source-drain electrode and a second source-drain electrode. The insulating layer is arranged on the silicon substrate; the metal gate electrode and the two-dimensional semiconductor layer are arranged on the insulating layer, and the two-dimensional semiconductor layer covers the metal gate electrode. The first source-drain electrode and the second source-drain electrode are arranged on the two-dimensional semiconductor layer and are located on opposite sides of the metal gate electrode respectively. The laser light source is directed towards the two-dimensional semiconductor layer. The first source-drain electrode and the second source-drain electrode each comprise an electrode main body. A plurality of pressing needle tips are arranged on the electrode main body of the first source-drain electrode and / or the second source-drain electrode. The tips of the pressing needle tips are directed towards the two-dimensional semiconductor layer. Under the action of the flexoelectric field, the source-drain current of the MESFET device is more easily saturated, and the driving capacity of the source-drain current of the MESFET device is increased.

A biosensor with a detection transistor of a metal-semiconductor field-effect (MESFET) type, for detecting a target substance. The detection transistor has an isolating substrate, a source electrode, a drain electrode, a first gate electrode, a channel for transmitting a drain-source current between the source electrode and the drain electrode, the channel being made of an oxide semiconductor, arranged on the isolating substrate and having the source electrode and the drain electrode arranged thereon, a sensitive substrate connected to the first gate electrode and including functionalization species for bonding the target substance, such that the first gate electrode connected with said substrate is sensitive to the target substance, and a second gate electrode arranged on the isolating substrate, physically separated from the first gate electrode by the channel, positioned opposite to the first gate electrode and aimed to modulate the drain-source current of the channel.

This invention provides a method and system for detecting displacement defects in metal-semiconductor field-effect transistors (MESFETs), relating to the field of semiconductor testing. By inputting defect parameters into a displacement defect model, it is equivalent to assuming the defect is a displacement defect, obtaining a simulated curve. This simulated curve represents the MESFET device under displacement defect conditions. The simulated curve is compared with the performance curve obtained through actual testing. When the simulated curve matches the performance curve, it can be verified that a displacement defect has occurred in the tested MESFET device. Using this method to test MESFET devices eliminates the need for multiple annealing tests for verification. Only electrical performance testing of the device under test is performed to obtain a performance curve, which is then compared with the simulated curve obtained through simulation for corroboration. This allows for accurate detection of displacement defects and improves the detection speed.

[Problem] To provide a bio-transistor that uses a bio-material made of a natural material that is friendly to the global environment and less harmful to living organisms. [Solution] A bio-transistor comprising a bio-material 11 formed from a cellulose composed mainly of wood or plant fibers (pulp). The bio-material 11 is preferably a semiconductor. Moreover, the bio-transistor is preferably a field-effect transistor (FET), and in that case, is preferably a metal-semiconductor field-effect transistor (MESFET), a metal-oxide-semiconductor field-effect transistor (MOSFET), or a junction field-effect transistor (JFET).

Crystals having excellent crystallinity, layered structures, and devices and electronic devices made using these. We provide chairs, electronic equipment, and systems. [Solution] A laminated structure in which an epitaxial film made of a conductive metal oxide is formed directly on a buffer layer or via another layer, wherein the buffer layer includes a crystalline film containing an oxide of Hf and / or Zr, is used to manufacture semiconductor devices such as Schottky barrier diodes (SBDs), junction barrier Schottky diodes (JBSs), metal-semiconductor field-effect transistors (MESFETs), high electron-mobility transistors (HEMTs), metal-oxide-semiconductor field-effect transistors (MOSFETs), electrostatic induction transistors (SITs), junction field-effect transistors (JFETs), insulated-gate bipolar transistors (IGBTs), light-emitting diodes (LEDs), or combinations thereof.