52 results about "E-Material" patented technology

The invention discloses a lead zirconate titanate film material with an ultrahigh voltage coefficient as well as a preparation method and application of the lead zirconate titanate film material, and belongs to the technical field of electronic material development and film materials. The preparation of the lead zirconate titanate film material is realized by adopting a sol-gel spin-coating method and controlling the annealing times. The piezoelectric film material provided by the invention can be directly deposited on a Si substrate coated with metal Pt, does not need to introduce an additional buffer layer or dope any element, is short in annealing time and simple in preparation process, all required raw materials are cheap and easy to obtain, and the piezoelectric film material particularly has high orientation degree, low coercive voltage and excellent ferroelectric and piezoelectric properties, is suitable for preparing large-size (2-4 inches) wafers, and has a wide application prospect. And huge application potential is shown in the field of piezoelectric micro-electro-mechanical system (MEMS) devices.

The invention relates to the technical field of processing methods of optoelectronic materials, and mainly relates to a grinding and polishing process of a magnetic thin film epitaxial substrate material-calcium magnesium zirconium doped gadolinium gallium garnet (Ca, Mg, Zr: GGG, hereinafter abbreviated as SGGG) single crystal substrate. Comprising the key steps of disc loading, thinning and leveling, mechanical grinding and polishing, chemical mechanical polishing (CMP) and the like, as shown in figure 1. The invention also relates to a special binder, a grinding liquid and a polishing liquid in the SGGG substrate processing process, and the ultra-smooth (the roughness is less than or equal to 0.5 nm) and ultra-flat (the flatness is less than or equal to 5 [mu] m) SGGG single crystal substrate can be obtained through the technological process, the corresponding grinding liquid and the corresponding chemical polishing liquid, so that the epitaxial growth requirement of a YIG or RIG magnetic film is met.

The present disclosure generally relates to spintronic material stacks and devices. The various disclosed embodiments of YBiPt based spin orbit torque (SOT) stacks can be used for high temperature applications. Disclosed herein are various buffer and / or interlayer configurations in spintronic stacks that can promote growth of YBiPt in the (110) orientation, to promote a high spin Hall angle (SHA) in SOT applications. One embodiment is a spintronic stack comprising a buffer layer comprising one or more layers, the one or more layers each individually comprising: MgO (100), TiN (100), Ta, Nb, HfN, Ta3W2 (110), TaW2 (100), Ta3W2N, TaW2N, or heated YPt, an SOT layer comprising YBiPt in the (110) orientation, an interlayer comprising one or more of MgO, Ta3WN, TaW3N, Ta3W (110), TaW3 (100), YPt (110), NiFeGeN, NiAlN, NiAl, NiFeGe, NiAlGe, or HfN, and a ferromagnetic layer.

The invention belongs to the technical field of discharge tubes or discharge lamps, and particularly relates to a composite cathode material with a sandwich-like structure, a field emission cathode and a preparation method and application of the field emission cathode. The composite cathode material with the sandwich-like structure comprises a cathode material layer I, a first metal bonding layer and a cathode material layer II which are sequentially stacked, and the cathode material layer I and the cathode material layer II are layers made of at least one material selected from graphene, carbon nanotubes, carbon cloth and ZnO nanowires. And the first metal bonding layer is formed by melting and curing metal particles. According to the composite cathode material, the cathode material layers are welded together to form a stable composite structure by using the metal bonding layer formed by curing the molten metal particles between the cathode material layers, so that the damage rate of an emissive electron material caused by sparking in the field emission process is reduced, and the field emission life of the composite cathode material is prolonged.

The present disclosure generally relates to spintronic material stacks and devices. A spintronic stack comprises an amorphous layer, a texturing layer comprising one or more materials selected from the group consisting of: TaxW1-x, where x is from zero to 1, MgO, Ru, Ti, TiN, YPt, B2 alloys X—Al, where X is one of Co, Ni, Ru, Rh, or Ir, CrMo, TaxW1-x N, HfN, and TaxHf1-xN, a barrier layer comprising one or more materials selected from the group consisting of: X—AlGe, X—AlGeN, where X is one of Co, Ni, Ru, or Ir, TaxW1-xN, HfN, and TaxHf1-xN, and TiN, a YPtBi layer having a (110), (111), or (100) orientation, an interlayer, and a ferromagnetic layer. The texturing barrier layers each individually comprises a material having a high resistivity to minimize shunting, and function as a crystal symmetry transfer layer to provide the a (110), (111), or (100) orientation to the YPtBi layer.

The invention relates to the field of microelectronic material manufacturing, in particular to a nickel-sulfur anode and a preparation method thereof. The method comprises the steps that a high-purity nickel plate with the purity larger than or equal to 4N5 and a nickel-sulfur intermediate alloy are used as raw materials for burdening and smelting, a nickel-sulfur anode cast ingot is obtained, and the mass content of sulfur in the nickel-sulfur anode cast ingot is 5-15 ppm; and then the nickel-sulfur anode cast ingot is subjected to hot forging at the heat preservation temperature of 500-1000 DEG C, and the blank obtained after hot forging is subjected to annealing treatment at the annealing temperature of 300-600 DEG C. According to the invention, a short-flow processing technology is adopted, the difficulty that the material is high in brittleness and easy to crack is overcome, the content of S in the nickel-sulfur anode is 10 + / -5ppm, the purity of the nickel-sulfur anode is up to 99.995% or above, and the coating purity is high; the organization structure is compact and free of pores, grains are fine and uniform, the grain size is smaller than or equal to 150 microns, and the coating uniformity is good; the coating efficiency is high, and the coating film can be widely applied to the industries of electronic components, communication, solar photovoltaic photoelectricity and the like.

The invention discloses a high-thermal-conductivity boron arsenide ceramic substrate and a preparation method and application thereof, and relates to the technical field of microelectronic materials. According to the high-thermal-conductivity boron arsenide ceramic substrate provided by the invention, the buffer layer of which the thermal expansion coefficient is within a specific range is introduced between the boron arsenide substrate and the conductive layer for transition, and the thickness of the buffer layer is controlled according to the difference of the thermal expansion coefficients of materials on two sides of the buffer layer, so that the stress between layers in the ceramic substrate can be reduced, and the thermal conductivity of the ceramic substrate is improved. And the long-acting stability of the substrate is improved while the excellent heat-conducting property is considered.

The invention discloses an S and Se co-doped silicon-based near-infrared photosensitive material based on picosecond laser-ion implantation and a preparation method and application thereof, and belongs to the technical field of semiconductor optoelectronic materials. A preparation method of an S and Se co-doped silicon-based near-infrared photosensitive material based on picosecond laser-ion implantation comprises the following steps: depositing an Se-doped film on the surface of a silicon substrate by adopting a vacuum deposition process, and then preparing black silicon with a micro-nano composite structure through picosecond laser scanning; and performing sulfur ion implantation modification on the black silicon with the micro-nano composite structure, and annealing to prepare the S and Se co-doped silicon-based near-infrared photosensitive material. Through a picosecond laser-ion implantation composite doping process, the problems of thermal damage and lattice defects in a traditional doping method are successfully solved, and preparation of the S and Se co-doped silicon-based near-infrared photosensitive material with high concentration and low defects is realized. The light absorptivity of the material at the wave band of 1300nm is remarkably improved, a process scheme capable of realizing mass production is provided for third-generation photovoltaic devices and high-performance infrared detectors, and the material has important application value and wide market prospects.

The invention discloses a grid-control multi-mode ferroelectric transistor device and a preparation method thereof, and belongs to the technical field of microelectronic materials and devices. The structure of the grid-control multi-mode ferroelectric transistor device comprises a grid electrode, a CuInP2S6 ferroelectric insulating layer, a hexagonal boron nitride dielectric layer, a stannous sulfide channel layer, a source electrode and a drain electrode on the stannous sulfide channel layer, and a substrate on the source electrode and the drain electrode which are arranged in sequence, the grid electrode, the source electrode and the drain electrode are all made of inert metal. The grid-control multi-mode ferroelectric transistor device provided by the invention can show different response behaviors to light with the same wavelength by changing the magnitude of the grid voltage, so that the simulation of controllable biological sensitivity and the simulation of adjustable biological accuracy are realized.

The present disclosure generally relates to spintronic material stacks and devices. The various disclosed embodiments of YBiPt based spin orbit torque (SOT) stacks can be used for high temperature applications. Disclosed herein are various buffer and / or interlayer configurations in spintronic stacks that can promote growth of YBiPt in the (110) orientation, to promote a high spin Hall angle (SHA) in SOT applications. One embodiment is a spintronic stack comprising a buffer layer comprising one or more layers, the one or more layers each individually comprising: MgO (100), TiN (100), Ta, Nb, HfN, Ta3W2 (110), TaW2 (100), Ta3W2N, TaW2N, or heated YPt, an SOT layer comprising YBiPt in the (110) orientation, an interlayer comprising one or more of MgO, Ta3WN, TaW3N, Ta3W (110), TaW3 (100), YPt (110), NiFeGeN, NiAlN, NiAl, NiFeGe, NiAlGe, or HfN, and a ferromagnetic layer.

The present disclosure generally relates to spintronic material stacks and devices. A spintronic stack comprises an amorphous layer, a texturing layer comprising one or more materials selected from the group consisting of: TaxWi-x, where x is from zero to 1, MgO, Ru, Ti, TiN, YPt, B2 alloys X-AI, where X is one of Co, Ni, Ru, or Ir, CrMo, TaxWi-x N, HfN, and TaxHfi-xN, a barrier layer comprising one or more materials selected from the group consisting of: X-AIGe, X-AIGeN, where X is one of Co, Ni, Ru, or Ir, TaxWi-xN, HfN, and TaxHfi-xN, and TiN, a YPtBi layer having a (110), (111), or (100) orientation, an interlayer, and a ferromagnetic layer. The texturing barrier layers each individually comprises a material having a high resistivity to minimize shunting, and function as a crystal symmetry transfer layer to provide the a (110), (111), or (100) orientation to the YPtBi layer.

The invention belongs to the technical field of microelectronic materials, and discloses a Micro-LED repairing and bonding method based on viscoelastic conductive photoresist. According to the method, a conductive photoresist pattern containing conductive nanoparticles, a photoresist matrix, a photosensitive gasified polymer and a viscoelastic polymer is prepared, a repair structure is pushed to be transferred to a bonding pad defect position by utilizing specific wavelength laser to trigger gasification decomposition, and a Micro-LED chip is temporarily fixed by virtue of viscoelasticity; and finally, the permanent bonding of the high-conductivity bonding pad and the chip is formed by heating and curing, so that the industrial pain points of difficulty in repairing the damage of the bonding pad, low precision, poor conductivity and the like in the mass transfer of the Micro-LED are solved. The system integrates a laser repairing module, a positioning calibration module and a thermocuring module, can efficiently repair defects of a driving substrate of a high-density Micro-LED display, remarkably improves the yield and reliability, and is suitable for manufacturing and maintaining Micro-LED displays such as vehicle-mounted displays, wearable equipment and outdoor large-screen displays.

The invention discloses a precursor alpha-aldimine Fe (II) compound for a magnetic random storage material, and belongs to the technical field of functional materials and microelectronic materials. The structural formula of the alpha-aldimine Fe (II) compound disclosed by the invention is as shown in a formula I; the Fe-based thin film has good volatility and thermal stability and good film forming performance, can be used as a precursor of chemical vapor deposition (CVD) / atomic layer deposition (ALD), and is continuous, uniform and high in purity through a CVD / ALD process. # imgabs0 #

The present disclosure generally relates to spintronic material stacks and devices. The various disclosed embodiments of YBiPt based spin orbit torque (SOT) stacks can be used for high temperature applications. Disclosed herein are various buffer and / or interlayer configurations in spintronic stacks that can promote growth of YBiPt in the (110) orientation, to promote a high spin Hall angle (SHA) in SOT applications. One embodiment is a spintronic stack comprising a buffer layer comprising one or more layers, the one or more layers each individually comprising: MgO(100), TiN(100), Ta, Nb, HfN, Ta3W2 (110), TaW2 (100), Ta3W2N, TaW2N, or heated YPt, an SOT layer comprising YBiPt in the (110) orientation, an interlayer comprising one or more of MgO, Ta3WN, TaW3N, Ta3W (110), TaW3 (100), YPt (110), NiFeGeN, NiAlN, NiAl, NiFeGe, NiAlGe, or HfN, and a ferromagnetic layer.

The application provides application of hafnium oxide-based memristor in preparation of electronic switches and belongs to the technical field of microelectronic materials and devices. The hafnium oxide-based memristor used in preparation of the electronic switches has a bidirectional threshold characteristic, and the structure thereof comprises, from bottom to top, an inert bottom electrode, an intermediate layer, a buffer layer and an active top electrode. The intermediate layer is a hafnium oxide film subjected to plasma treatment and annealing double treatment, the buffer layer is a silver indium antimony tellurium film, and the active top electrode is a silver electrode. The memristor can be converted from a high resistance state to a low resistance state at a threshold voltage under positive and negative voltages, and can spontaneously recover to the high resistance state when back scanning to a holding voltage. The hafnium oxide-based memristor is used in preparation of the electronic switches, the double treatment process and the AIST buffer layer complement each other, and the hafnium oxide-based memristor is endowed with comprehensive performance, so that the application requirements of high-performance and low-power-consumption electronic switches can be fully met, and the practical development of the technology is promoted.

The invention discloses an in-plane domain multi-angle turnover photoelectric ferroelectric device and a preparation method thereof, and belongs to the technical field of microelectronic materials and devices. The structure of the in-plane domain multi-angle overturning photoelectric ferroelectric device comprises an insulating substrate, an inert metal electrode of a planar eight-claw structure and a two-dimensional ferroelectric layer which are combined in sequence, or the insulating substrate, the two-dimensional ferroelectric layer and the inert metal electrode of the planar eight-claw structure which are combined in sequence; the intersection of the inert metal electrode with the planar eight-claw structure is in contact with the two-dimensional ferroelectric layer; the material of the two-dimensional ferroelectric layer is two-dimensional alpha-In2Se3. According to the in-plane domain multi-angle overturning photoelectric ferroelectric device provided by the invention, the in-plane domain multi-angle overturning of the two-dimensional material can be realized to induce ferroelectric polarization, and a new research idea is provided for understanding other ferroelectric materials with in-plane ferroelectric domains.

The present invention discloses a high-frequency, low-loss amorphous soft magnetic composite film material and a preparation method thereof. The soft magnetic composite material is in the form of a composite film and relates to the technical field of magnetic electronic materials. First, amorphous soft magnetic powder of a certain particle size is pre-treated and then insulated and coated. It is mixed with an appropriate amount of resin and an auxiliary agent to form a slurry, and then cast into an amorphous composite film and dried. The prepared magnetic composite film can be laminated into a whole in multiple layers or used alone. The amorphous composite film prepared by the casting method of the present invention has a stable magnetic permeability greater than 10 at 1MHz to 200MHz and a loss angle less than 0.08, and can be used in high-frequency electromagnetic shielding, inductor devices, wave absorption and other fields.

The present invention belongs to the technical field of semiconductor optoelectronic materials, specifically a sheet-like full-dimensional perovskite single crystal and its preparation method and application. The method of the present invention comprises: preparing a perovskite precursor solution and keeping it warm; dripping a trace amount of the perovskite precursor solution onto a hydrophobic substrate; self-assembling at the solution-air interface, controlling the growth time to complete the crystal growth; and preparing a perovskite single crystal with full structural dimensions according to different raw materials. The present invention utilizes octadecyltrichlorosilane to increase the surface tension of the droplets. Compared with the planar droplets, the curved droplets promote the anisotropic growth of low-dimensional and even three-dimensional perovskites. The present invention overcomes the problems of low aspect ratio of existing low-temperature grown single crystals and inability to be used in planar optoelectronic devices, and the preparation process is simple and efficient; the obtained single crystal has the characteristics of high quality, high aspect ratio, etc., emits symmetrical fluorescence peaks at room temperature, and has excellent optoelectronic properties; it can be widely used in the field of photoelectric detection.

The invention relates to the technical field of development of novel microelectronic materials, preparation of dielectric film materials and prototype dielectric devices, and particularly discloses a preparation method and application of a hafnium zirconium oxide thin film material with high energy storage density deposited on attached silicon. A bottom electrode, a dielectric film layer and a top electrode are sequentially sputtered and deposited on the surface of the substrate from bottom to top through a radio frequency magnetron sputtering method, the bottom electrode is an aluminum-doped zinc oxide film, the dielectric film layer is a hafnium zirconium oxide ferroelectric film, and the top electrode is a gold upper electrode thin layer. The method comprises the following steps: S1, processing a substrate; s2, depositing a bottom electrode layer on the surface of the substrate; s3, depositing a dielectric film layer on the bottom electrode layer; s4, depositing a top electrode on the dielectric film layer; and S5, performing a dielectric test. The film material can be directly deposited on a silicon substrate at medium and low temperatures, and the prepared dielectric film material is lead-free, environment-friendly, simple in component, easy in raw material obtaining and suitable for industrial popularization and application.

1. The name of this design product: Electromagnetic dynamic mechanics test system. 2. The use of this design product: A fatigue test system for testing metal materials, microelectronic materials, polymer materials, and biological materials. 3. The design key points of this design product: The combination of shape and pattern. 4. The picture or photo that best shows the design key points: The three-dimensional view.

The present disclosure relates generally to spintronic material stacks and devices. Various disclosed embodiments of YBiPt-based spin-orbit torque (SOT) stacks can be used for high-temperature applications. Disclosed herein are various buffer and / or intermediate layer configurations in spintronic stacks that can promote the growth of YBiPt in the (110) orientation to promote a high spin-Hall angle (SHA) in SOT applications. One embodiment is a spintronic stack including a buffer layer including one or more layers each individually including MgO(100), TiN(100), Ta, Nb, HfN, Ta3W2(110), TaW2(100), Ta3W2N, TaW2N, or YBiPt; an SOT layer including YBiPt with a (110) orientation; an intermediate layer including one or more of MgO, Ta3WN, TaW3N, Ta3W(110), TaW3(100), YPt(110), NiFeGeN, NiAlN, NiAl, NiFeGe, NiAlGe, or HfN; and a ferromagnetic layer.

The invention provides a method for manufacturing a square quartz substrate, which comprises the following steps of: cutting a square quartz substrate blank to be processed into blank pieces by using a cutting machine, then respectively carrying out profiling contour grinding on each piece, and carrying out double-sided coarse grinding and accurate grinding on two large surfaces of a square quartz substrate workpiece according to the thickness removal amount and roughness requirements; placing the square quartz substrate workpiece subjected to double-sided accurate grinding on a side edge polishing machine carrying table, and polishing the four side surfaces of the square quartz substrate workpiece at the same time; the square quartz substrate workpiece with the side face polished is loaded in a polishing jig of a double-face polishing machine, double-face rough polishing, medium polishing and fine polishing are conducted on the two large faces of the square quartz substrate workpiece respectively, and the thickness removal amount, roughness and surface quality requirements of all procedures are met; and the polished square quartz substrate workpiece is placed in an ultrasonic cleaning machine to be cleaned and detected, and the square quartz substrate workpiece is cleaned and packaged after being detected to be qualified. The method is mainly completed by combining the working procedures of single-line cutting, multi-line cutting, CNC profiling, double-face grinding, side edge polishing, double-face polishing, ultrasonic cleaning and the like, the method is suitable for manufacturing high-flatness, low-roughness and low-defect quartz glass substrates, the complete manufacturing technological process and specification of the quartz glass substrates are established through batch machining, sampling inspection and full inspection, and the production efficiency of the quartz glass substrates is improved. The processing efficiency and the yield of the product are improved, and the quartz substrate is particularly suitable for a photomask plate used in a semiconductor associated electronic material and belongs to the technical field of ultra-precision processing.

The invention discloses an automatic microelectronic material filling device and a using method thereof, and relates to the technical field of microelectronic materials, the automatic microelectronic material filling device comprises a machine table, a support, a filling mechanism, a cleaning mechanism and a jacking mechanism, the bottom end of the support is fixedly connected to one side of the upper surface of the machine table; the filling mechanism is arranged on the machine table and is used for filling a microelectronic material onto the circuit substrate; the cleaning mechanism is fixedly installed on the filling mechanism and used for cleaning a discharging opening of the filling mechanism. The jacking and pressing mechanism is arranged on the cleaning mechanism and used for sealing the discharging opening of the filling mechanism. A filling gun head drives an extrusion block to vertically move downwards, extrudes an extrusion groove and pushes a movable ring to rotate clockwise, a fixed disc drives a fixed column to push a connecting rod, so that the movable blocks rotate around a fixed shaft, and the multiple movable blocks rotate to the bottom end of the filling gun head to clean a discharging opening of the filling gun head; and the filling quality of the microelectronic material is ensured.

The invention relates to welding-resistant conductive silver paste for a PTC thermistor and a preparation method and application of the welding-resistant conductive silver paste, and relates to the field of electronic materials. The conductive silver paste comprises silver powder, glass powder, a metal oxide additive and an organic carrier, the glass powder comprises first glass powder and second glass powder, the Tg of the first glass powder is smaller than or equal to 300 DEG C, the Tg of the second glass powder is smaller than or equal to 450 DEG C, and the weight part ratio of the first glass powder to the second glass powder is (0.5-1): (1-2). The conductive silver paste has good compactness, weldability and soldering resistance on the surface of a silver layer after being sintered, not only has the characteristic of sintering under a low-temperature condition, but also can overcome the problem of low compactness of the silver layer during low-temperature sintering, effectively resists corrosion of welding flux during welding, has strong binding force between the silver layer and a base material, and has good corrosion resistance. And the method is of great significance in promoting high performance and green manufacturing of the PTC element.

The invention discloses a transistor based on light regulation and control and a preparation method thereof, and belongs to the technical field of microelectronic material devices. The transistor based on light regulation and control comprises a gate electrode layer, a gate insulating layer, a photoelectric semiconductor layer and a source and drain electrode layer which are sequentially arranged from bottom to top, the photoelectric semiconductor layer is an indium gallium zinc oxide doped silver nanoparticle composite film. According to the invention, the photoelectric semiconductor layer is prepared by doping the silver nanoparticles into the indium gallium zinc oxide layer, so that a semiconductor device with different regulation and control on light with different wavelengths is obtained, and the problem that an indium gallium zinc oxide-based transistor has single response to light is solved. Under the irradiation of green light, silver nanoparticles in the photoelectric semiconductor layer can be oxidized into Ag < + >, and electrons enter a conduction band, so that the conductivity of the semiconductor layer is increased; under the irradiation of ultraviolet light, electrons of a valence band in indium gallium zinc oxide of the photoelectric semiconductor layer are excited by the ultraviolet light and jump to a conduction band so as to reduce Ag < + >, and the conductivity of the semiconductor layer is reduced.

The invention relates to the technical field of metal material processing and microelectronic material manufacturing, in particular to a tin-silver anode and a preparation method thereof. The method comprises the following steps: proportioning: proportioning high-purity tin and high-purity silver serving as raw materials to obtain a material; the mass ratio of the high-purity tin to the high-purity silver is 98: 2-92: 8; smelting: smelting the materials to obtain a tin-silver anode cast ingot; and cold deformation: carrying out cold deformation on the tin-silver anode cast ingot. According to the invention, a short-process processing technology is adopted, and more excellent performance and economic benefits are taken into account. The tin-silver anode with uniform components is designed and prepared, has conductivity and ductility, is more excellent in performance, gives consideration to economic benefits, and can be widely applied to the industries of electronic components, communication, solar photovoltaic photoelectricity and the like.

The present invention belongs to the field of electronic materials and provides a ferrite thick film material with low ferromagnetic resonance linewidth and high dielectric constant and a preparation method thereof. Firstly, a YIG ferrite material substituted with Bi-Ca-Sn-Zr ions is used as a basis, and a YIG ferrite is prepared by a traditional solid phase sintering method. 2.0‑x Bi 1.0 Ca x Fe 5‑2x Sn x Zr x O 12 Ferrite materials, Bi-Ca ion substitution in the composition can increase the dielectric constant of the material, making the material have high dielectric constant characteristics (dielectric constant ε' ≥ 20) in the frequency band of 1MHz to 500MHz. Sn-Zr ion substitution in the composition promotes the material to reduce magnetocrystalline anisotropy and loss, and improves the influence of internal stress and pores on the ferromagnetic resonance linewidth of the material, reducing the magnetic loss of the ferrite in the high frequency band, so that the material has a lower ferromagnetic resonance linewidth (ΔH ≤ 100Oe); however, the ferrite thick film material is prepared by a spinning process, and annealing and forming under magnetic field orientation to obtain a ferrite thick film material with low ferromagnetic resonance linewidth and high dielectric constant, which meets the needs of microwave devices.

The present invention relates to the technical field of microelectronic materials and devices, and relates to a method for preparing an N-type polymer field-effect transistor based on a bismuth contact electrode; the N-type polymer field-effect transistor has a top-gate bottom-contact structure; first, a bismuth metal film is prepared on a substrate as source and drain electrodes by vacuum evaporation through a mask plate, then an organic semiconductor is spin-coated on the surface as an active layer, and after annealing, an insulator is spin-coated on the surface as a dielectric layer, and finally, an aluminum metal film is evaporated on the dielectric layer through a mask plate as a gate electrode; compared with traditional gold contact electrodes, the contact electrode prepared by this method has significantly improved N-type electrical contact performance, significantly enhanced device performance, and significantly reduced preparation cost.

The present disclosure generally relates to spintronic material stacks and devices. A spintronic stack comprises an amorphous layer, a texturing layer comprising one or more materials selected from the group consisting of: TaxW1-x, MgO, YPt, RuAl, RuAlN, HfN, NiAlGeN, IrAlGeN, and (TaxW1-x)N, and TiN, where x between 0.005 and 1, a barrier layer comprising one or more materials selected from the group consisting of: NiAlGeN, NiAlGe, IrAlGeN, IrAlGe, HfN, and TiN, a topological insulating (TI) layer comprising BiSb having a (012) or (001) orientation, an interlayer, and a ferromagnetic layer. The texturing layer, the barrier layer, and the interlayer each individually comprises a material having a high resistivity to minimize shunting, act as a migration barrier, and function as a crystal symmetry transfer layer to provide the (012) or (001) orientation to the TI layer. The spintronic stack may be nitrogenated to increase the resistivity of the stack.

The invention discloses a NaBiS2 polycrystalline thin film material, a TiO2 / NaBiS2 heterojunction thin film and photoelectric detection application of the TiO2 / NaBiS2 heterojunction thin film, and belongs to the technical field of new electronic materials and new devices. Sodium hydroxide, bismuth oxide and sublimed sulfur are dissolved through a secondary solution reaction method of a three-solvent system of ethanediamine, beta-mercaptoethanol and 1, 2-ethanedithiol to serve as a precursor solution for forming NaBiS2, the NaBiS2 film of a pure-phase cubic system grows through a solution spin-coating method, the band gap of the NaBiS2 film is 1.35 eV, and the NaBiS2 film is flat and uniform in surface appearance and free of cracks. The film is simple in preparation process, low in cost and pure in product phase. Meanwhile, the invention provides a photoelectric detection application of heterogeneous TiO2, the photoelectric detector is formed by sequentially compounding an FTO substrate, a TiO2 porous layer, a NaBiS2 light absorption layer and a cheap carbon electrode, and the NaBiS2 light absorption layer and the TiO2 porous layer are combined to form a heterojunction, so that the photoelectric detector has a good self-powered characteristic; the invention provides a novel semiconductor film material, a preparation method and a photoelectric detection application example for the field of electronic materials and devices.