225 results about "E-Material" patented technology

The invention discloses a plate capacitor and polymer-matrix composite dielectric material which can be filled with reactive nano particles, belonging to the technical field of the electronic materialand the electronic component. The reactive nano particles are conductive nano particles in core shell structures, the surface of each conductive nano particle is coated with a layer of insulating coating, and the surface of the insulating coating can carry reactive functional groups. The nano particles can be organically combined with polymer through the reactive functional groups and can be evenly dispersed in the matrix of the polymer. The polymer-matrix composite dielectric material which can be filled with the conductive nano particles can be used as the dielectric layer and flexible foilsheets can be used the upper electrode and the lower electrode of the plate capacitor.

The invention belongs to the organic film preparation field, and relates to a preparation method of porous low-dielectric polyimide thin films. The method includes the following steps: (1) preparation of a reinforcing filler suspension; (2) preparation of a polyamide acid compound solution; (3) preparation of polyimide thin films; and (4) obtaining of the porous polyimide thin films. Calcium carbonate is used as a pore-forming agent raw material, the calcium carbonate is removed by dilute hydrochloric acid to obtain the porous thin films, raw materials are simple and are easy to obtained, and complex operations are not needed; at the same time, the pore size and porosity of the thin films can be controlled directly through control of the particle size and content of the calcium carbonate, and various porous low-dielectric polyimide thin films with excellent performance are prepared, can be applied in substrate materials of electrician and electronic industries and are especially suitable for electronic materials of large-scale integrated circuits.

A photovoltaic device includes an electron accepting material and an electron donating material. One of the electron accepting or donating materials is configured and dimensioned as a first component of a bulk heterojunction with a predetermined array of first structures, each first structure is substantially equivalent in three dimensional shape, has a substantially equivalent cross-sectional dimension, and where each first structure of the array of first structures has a substantially equivalent orientation with respect to adjacent first structures of the predetermined array forming a substantially uniform array.

The invention belongs to the field of microelectronic material, and relates to a preparation method of a flexible copper electrode pattern in a micron level wire width. The preparation method provided by the invention is a ''whole addition'' method, which means that metal copper only precipitates on a predetermined position on a plastic substrate. A specific process comprises steps of plastic substrate cleaning, drying, surface modification, ultraviolet irradiation under a photomask and chemical coppering, etc. The flexible copper electrode pattern prepared by the invention has the following advantages that (1) precision of the electrode pattern is determined by the photomask to reach a micron level wire width; (2) most of the process is carried out in solution, so the process does not require large-scale apparatus equipment and rigorous environment of anultraclean chamber and is suitable for low cost and large scale production; (3) the electrode pattern and the plastic substrate are firmly bonded, can stand repeat folding and have long service life and high reliability; (4) the electrode pattern has good conductivity and is beneficial for reducing energy consumption during usage. The flexible copper electrode pattern prepared by the invention can be widely applied to industrial fields of flexible transistor, flexible solar cell and flexible luminescent device, etc.

The present invention relates to a method for producing a titanium-containing perovskite compound, characterized in that the method comprises a step of reacting titanium oxide produced through a vapor-phase method with at least one element selected from a group of alkaline earth metal compound and Pb compound in an alkaline solution; a perovskite compound obtained by the method; and electronic materials and the like using the compound. The titanium-containing perovskite compound obtained by the method in the present invention has a small particle diameter and few impurities, is excellent in electric characteristics, and enables to make the size of electronic devices smaller since the compound can be shaped in a thin film product.

The invention discloses a method for preparing a high-performance cellulose/resin composite film by a UV curing process, which comprises the following steps: washing prepared a regenerated cellulose film with water, replacing water in the film with an organic solvent (such as methanol, ethanol, acetone or the like), immersing the film in a photocuring resin/photoinitiator mixed solution for 2-12 hours, and photocuring under UV irradiation to obtain the high-performance cellulose/resin composite film. The method is simple to operate, and has the characteristics of high efficiency, energy saving and environmental protection; and the prepared product has favorable light transmission and mechanical properties, and has wide application prospects in the fields of packaging, solar energy, flexible electronic materials and the like.

The invention provides a microstrip antenna organic composite substrate material and a preparation method thereof, and belongs to the technical field of electronic materials. The organic composite substrate material is compounded from a principal phase material and an auxiliary phase material in mass percent ratio of 100:(80-120); the principal phase material is Co2Z type hexagonal ferrite with a formula molecular formula of (Ba(1-x)Srx)3Co2Fe24O41, wherein x ranges from 0 to 0.5; and the auxiliary phase material is polytetrafluoroethylene resin. The preparation method for the microstrip antenna organic composite substrate material comprises the following steps: (1) weighing, mixing and drying after carrying out primary ball-milling; (2) carrying out pre-sintering; (3) carrying out secondary ball-milling and drying; (4), compounding and drying; and (5) thermally pressing and molding. The method is simple and convenient to operate, and low in cost; the obtained composite substrate material has relatively high magnetic conductivity and a dielectric constant within a frequency range of 100 MHz-1000MHz, relatively low magnetic loss and dielectric loss; and the obtained substrate has relatively good softness and uniformity.

An electron donating organic material includes a benzothiadiazole compound including (a) a benzothiadiazole skeleton and (b) an oligothiophene skeleton, and having a band gap (Eg) of 1.8 eV or less, and a level of highest occupied molecular orbital (HOMO) of −4.8 eV or less, wherein said benzothiadiazole compound is formed by covalently combining the benzothiadiazole skeleton and the oligothiophene skeleton alternately, a proportion between the benzothiadiazole skeleton and the oligothiophene skeleton is within a range of 1:1 to 1:2 (however, excluding 1:1), and the number of thiophene rings contained in an oligothiophene skeleton is 3 or more and 12 or less.

The solution method for preparing metal photonic crystal belongs to the technical field of nano photoelectron materials and devices thereof. The existing method for preparing metal photonic crystal is faced with the problems such as high cost, low efficiency and small area of preparation, etc. In the invention, sequentially, optical resist is rotatably coated on a substrate; the interference photolithography is adopted to prepare one-dimensional or two-dimensional nano optical grating structures; metal nano particle sol is rotatably coated and goes through low temperature heat treatment, thus obtaining the metal photonic crystal. The invention has the advantages of low cost, high efficiency and preparation of the metal photonic crystal in a large acreage and the like.

The invention discloses a preparation method of a high-magnetic-conductivity low-temperature-sintering Z-shaped hexagonal ferrite material, belonging to the field of electronic materials and relating to the obtaining of low-temperature densification sintering and the high magnetic conductivity of a Z-shaped hexagonal ferrite material. The invention induces a high-efficient and energy-saving microwave heating way in the traditional ferrite preparation technique process, efficiently reduces the synthesizing temperature of the hexagonal ferrite and prompts the densification of the sintering process by depending on the activation of microwave on the sintering process, thereby realizing the purpose of improving microcosmic structure and increasing the magnetic conductivity. The prepared high-magnetic-conductivity low-temperature-sintering Z-shaped hexagonal ferrite material can be used for preparing various high-frequency inductances, filters, antennas and microwave absorbing medium based on an LTCC (Low Temperature Co-fired Ceramics) technology.

The invention discloses nano-scale high-precision additive manufacturing equipment. The nano-scale high-precision additive manufacturing equipment comprises a printing platform and a printing nozzle,wherein a high-voltage pulse power supply is applied between the printing platform and a conductive nozzle of the printing nozzle; and a uniform-intensity magnetic field perpendicular to the printingplatform is further arranged between the printing platform and the printing spray head, and the distance between the printing platform and the printing nozzle meets the characteristic requirements. According to the nano-scale high-precision additive manufacturing equipment, nano-scale 2D and 3D additive manufacturing is achieved, high-voltage pulse electric fluid dynamic jetting, a nano-scale printing head and a constraint magnetic field are benefited, and the problem that high-precision nano-scale materials cannot be constructed in the prior art is solved, and particularly relates to the insufficiency and restrictions in the field of electronic circuit board printing, nano energy storage, solar cells and biomedicine, flexible electronic materials, high-flux preparation and the like.

The invention belongs to the technical field of electric materials and devices, and relates to a method for preparing a flexible polyester nickel-coating electrode. The method particularly comprises the following steps of: performing surface silicification modification on a polyester substrate, and introducing silane coupler molecules, of which the tail ends contain active groups such as sulfhydryl groups, amino groups and acylamino groups on the premise of not damaging surface flatness; performing catalytic activation on the polyester substrate in mixed solution of silver nitrate and glucose so as to make a thin layer of silver catalyst coated on the polyester substrate undergoing silicification, wherein the silver catalyst layer and the substrate are connected by chemical bonds; and finally performing chemical nickel-plating in the presence of silver catalyst. The polyester nickel-coating electrode prepared by the method has the advantages of strong adhesion between the nickel coating layer and the substrate, stripping strength of more than 40N/cm, high smoothness, root-mean-square roughness(Rrms) of less than 15nm (the area is 5mu m*5mu m), high electric conductivity, and lower resistivity (5.3 mu omega.cm) compared with that of pure nickel. The flexible polyester nickel-coating electrode can be widely applied to solar batteries, membrane ion secondary batteries, flexible organic electric devices, and the like.

This invention relates to antimony-doped multi-elements oxide transparent conductive membrane. On the Zn-Sn-O membrance, antimony doping is proceeded, by using radio-frequency magnetic-control technique, under vacuum condition, to produce Zn-Sn-O:Sb transparent conductive membrane having multi-crystal structure. The ceramic target for sputtering use is composed of zinc oxide stannic oxide, antimony sesquioxide, the prepn. conditions are: argon pressure=0.5-5 Pa, oxygen pressure=0-6 mPa, sputtering power=50-200w, temp.=150-450 deg.C. This inventive complex transparent conductive membrane material has the property of stability in hydrogen plasma like ZnO, and has high electrical stability like SnO2. It has advantages of: no toxicity, broad application field, being substituted for ITO membrane, saving noble metal indium.

The invention belongs to the technical field of microelectronic materials and relates to a nanometer composite multilayer phase change thin-film material for a phase change memory. In a GeTe/Ge2Sb2Te5 nanometer composite multilayer phase change thin-film material, a monolayer GeTe thin film and a monolayer Ge2Sb2Te5 thin film are alternately arranged to form a multilayer thin-film structure, wherein the thicknesses of the monolayer GeTe thin film and the monolayer Ge2Sb2Te5 thin film are both 1-15nm. In the invention, the crystallization temperature of the thin-film material is raised along with the increase of the thickness of the monolayer Ge2Sb2Te5 thin film in the cycle; a reversible transformation between a high resistance state and a low resistance state can be realized through an electrical pulse by utilizing a phase change memory cell based on the GeTe/Ge2Sb2Te5 nanometer composite multilayer phase change thin-film material; and compared with the Ge2Sb2Te5 material, the nanometer composite multilayer phase change thin-film material has higher crystallization temperature, better heat stability in an amorphous state and lower device operation voltage, thereby having lower power consumption.

The present invention provides oxide magnetic semiconductor film with adjustable electronic transport properties and manufacture method thereof, which belongs to information technology rotating electron material field. The series oxide magnetic semiconductor film displays common electric transport property: material with low electric resistivity being Mott range transition resistor, material with middle electric resistivity being hard Efros range transition resistor, material with high electric resistivity being hardgap resistor. The super thin iron magneto- metallic layer and the wide forbidden region oxide semiconductor layer are alternating deposited on substrate by using the method of magnetron sputtering or pulsed laser depositing through accurate control partial pressure of oxygen in film preparation process to regulate electric transport property of material. Electric transport property of oxide magnetic semiconductor film is only related to concentration of oxygen vacancy in material.

The invention belongs to the technical field of electronic materials and components, and particularly relates to a thick film pyroelectric sensitive element and a preparation method thereof. The thick film pyroelectric infrared sensitive element comprises a top electrode, a heat sensitive layer and a bottom electrode. The top electrode is used as a common electrode, and the thickness of the infrared radiation absorbing surface of the top electrode is 10-500 nm. The heat sensitive layer is arranged between the top electrode and the bottom electrode and is prepared by compounding pyroelectric ceramic powder and organic pyroelectric polymers, and the thickness of the heat sensitive layer is 1-100 um. The bottom electrode is used for leading out pyroelectric response signals, and the thickness of the bottom electrode is 10 nm to 1 um. According to different types of pyroelectric infrared sensitive element, the top electrode and the bottom electrode of the infrared sensitive element are imaged. The thick film pyroelectric sensitive element is applied to safety burglary prevention, human body detection and the like in the civilian field. The thick film pyroelectric sensitive element has the advantages of being good in thermal insulation effect, more sensitive to weak environment temperature change, higher in sensitivity, simple in manufacturing technology, low in cost, capable of facilitating batch processing and beneficial to industrialization production.

A method of improving gas, water, water vapor, and/or grease resistance of a porous material is disclosed which comprises treating th(e material with a wax, poly(vinyl alcohol), plasticizer, and optionally a polyamine. In some embodiments, an optional first treatment agent may be applied to the material prior to the application of wax and poly(vinyl alcohol), plasticizer, and optionally a polyamine. Materials that have a single coating of wax, poly(vinyl alcohol), plasticizer, and optionally a polyamine, as well as materials having a multi-layer coating that includes a first coating of a first treatment agent and a second coating of wax, poly(vinyl alcohol), plasticizer, and optionally a polyamine are also disclosed.

The invention discloses a process for reducing chemical-mechanical polishing cracks on a buried layer cavity silicon-on-insulator (SOI) wafer, belonging to the technical field of microelectronic material processes. Aiming at reducing the thickness of the buried layer cavity SOI wafer through chemical-mechanical polishing, the process mainly comprises the steps of pressure setting, bonding, rough grinding and fine polishing for completing the fabrication of the buried layer cavity SOI wafer. Pressure in a bonding chamber and steps for two stages of chemical-mechanical polishing, i.e. coarse grinding and fine polishing are set according to the final thickness of the top layer silicon film of the SOI wafer. By setting the pressure in the bonding chamber, thermal-induced top layer silicon film deformation in a chemical-mechanical polishing process can be balanced, the cracks on the top layer silicon film of the SOI wafer can be avoided or reduced, the consistency of the thickness of the top layer silicon film is improved, the product quality is controlled very well and the processing cost is reduced.

The invention provides a method for preparing lead sulfide thin films with (200) preferred orientation, which belongs to the technical field of electronic materials and relates to semiconductor optoelectronic thin films and infrared photoelectric detectors, in particular to a method for preparing the lead sulfide thin films with (200) preferred orientation of near-infrared photoelectric detectors by using chemical bath deposition. In the invention, the bicontinuous cubic phase lead sulfide thin films with (200) preferred orientation are obtained by using the chemical bath deposition, designing a preparation flow of solution of a reaction precursor, strictly controlling the initial nucleating process of the thin films and performing a subsequent high-temperature sensitizing process. The lead sulfide thin films prepared by the method have high uniformity and a light sensitive characteristic and can be used in the near-infrared photoelectric detectors. The invention has the advantages that: the whole preparation technical process is simple and easy to control; and the preparation device is simple and low in cost.

The invention discloses a preparation method for a perovskite type solar battery, and belongs to the field of optoelectronic materials and devices. The perovskite type solar battery comprises a transparent conducting substrate, a TiO2 electron transporting layer, a perovskite light-absorbing layer, a hole transmission layer and a metal counter electrode layer that are stacked in sequence, wherein the preparation for the electronic transporting layer comprises the steps of step a, providing a transparent substrate material with a clean surface, and depositing a titanium dioxide compact thin film on the surface of the substrate material by adopting an atomic layer depositing technology; step b, depositing a titanium-contained organic-inorganic composite film on the titanium dioxide compact thin film obtained in the step a by adopting a molecular layer depositing technology; and step c, annealing the material obtained in the step b at the temperature of 400-600 DEG C for 0.5-5 hours to obtain the TiO2 electron transporting layer. The TiO2 electron transporting layer provided by the invention is higher in the degree of crystallinity, uniform in film formation and lower in impedance, so that the photo-generated current density is dramatically increased, and the photoelectric converting efficiency and the thermal stability of the devices are greatly improved.

The invention relates to a PZT (lead zirconate titanate)-based antiferroelectric ceramic material with low curie point TC and a high bidirectional-adjustable dielectric electric field and a preparation method thereof and belongs to the technical fields of electronic materials and devices. The chemical general formula of the PZT-based antiferroelectric ceramic material with bidirectional adjustability of a dielectric electric field is (Pb[0.99-x-y]BaxLay)(Zr0.51Sn 0.39Ti0.10)O3, wherein x is larger than 0 and less than or equal to 0.20, and y is larger than 0 and less than or equal to 0.06. The PZT-based antiferroelectric ceramic material with dielectric bidirectional adjustability has high dielectric coefficient and low dielectric loss under a certain bias voltage in the vicinity of low curie point TC, and the dielectric coefficient is increased and then decreased along with the increase of the bias voltage; the PZT-based antiferroelectric ceramic material has bidirectional dielectric adjustability, simultaneously has high pyroelectric coefficient and pyroelectric current, and can be widely used in the fields of microelectronics, computers, capacitors, sensors, aerospace technologies and the like.

The invention discloses a single crystal copper bonding lead and a preparation method thereof, relating to the field of production of microelectronic materials. The production technology integrates a metal material preparation process, a heat treatment process and a diamond die process, ensures the production consistency and reliability and realizes the large-scale production. The adopted production process comprises the steps of providing die repair and gas protection equipment, smelting, wiredrawing, cleaning, and compounding, packaging and testing a finished product. The single crystal copper bonding lead has the beneficial effects that as a signal crystal copper material has a compact solidification structure, lateral crystal boundaries are eliminated, the casting defects of shrinkage cavities, pores and the like are avoided, the plastic working performance, the mechanical performance, the electric performance and the like of the signal crystal copper material are obviously higher than those of the conventional oxygen-free copper, the defects of more end breakage, low quality and low productivity in the wiredrawing process of the conventional copper wire are overcome, and an electronic packaging bonding wire with the wire diameter reaching 0.015m, high strength, high elongation and stable performance can be prepared.

The invention discloses a method for preparing high-quality molybdenum disulfide thin films with the layer numbers being uniform. Potassium chloride is used for assisting a chemical vapor deposition method in preparing of large-area single-layer molybdenum disulfide thin films on a silicon substrate covered by a silicon dioxide layer with the thickness being 300nm, and the single-layer molybdenumdisulfide thin films of different dimensions can be obtained by controlling the amount of different sorts of the potassium chloride. The method has the advantages that the high-quality molybdenum disulfide thin films with good homogeneity can be effectively prepared through the potassium chloride, and the experimental method is simple in technology, low in cost and suitable for mass production; the prepared molybdenum disulfide thin films can be used as two-dimensional transparent semiconductor films to be applied to the fields of photoelectric devices, flexible and transparent devices, optical detectors and the like; and the method is of high application value and significance to electronic material preparation and production.