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E-Material, also called E Material, is a metal matrix composite consisting of beryllium matrix with beryllium oxide particles. It has high thermal conductivity (210-230 W/m K), and its thermal expansion can be adjusted to match other materials, e.g. silicon and gallium arsenide chips and various ceramics. It is chiefly used in microelectronics as substrate for power semiconductor devices and high density multi-chip modules, where it aids with removal of waste heat. E-materials have low weight and high strength, making them especially suitable for aerospace technology. Their high elastic modulus is favorable for absorbing vibrations and lowering material fatigue of attached modules and wire bonds.
Application of hafnium oxide-based memristor in preparation of electronic switch
The application provides application of hafnium oxide-based memristor in preparation of electronic switches and belongs to the technical field of microelectronic materials and devices. The hafnium oxide-based memristor used in preparation of the electronic switches has a bidirectional threshold characteristic, and the structure thereof comprises, from bottom to top, an inert bottom electrode, an intermediate layer, a buffer layer and an active top electrode. The intermediate layer is a hafnium oxide film subjected to plasma treatment and annealing double treatment, the buffer layer is a silver indium antimony tellurium film, and the active top electrode is a silver electrode. The memristor can be converted from a high resistance state to a low resistance state at a threshold voltage under positive and negative voltages, and can spontaneously recover to the high resistance state when back scanning to a holding voltage. The hafnium oxide-based memristor is used in preparation of the electronic switches, the double treatment process and the AIST buffer layer complement each other, and the hafnium oxide-based memristor is endowed with comprehensive performance, so that the application requirements of high-performance and low-power-consumption electronic switches can be fully met, and the practical development of the technology is promoted.
Owner:NORTHEAST NORMAL UNIVERSITY