The invention relates to a piece of growth equipment and a growth method for large-size gallium oxide monocrystalline. The equipment comprises the following components: a zirconia insulating brick (1), a quartz cylinder (2), a water cooling copper electrode (3), an iraurita crucible (4), a heat exchanger (6), and an infrared thermometer (7). The method comprises the following steps: the iraurita crucible (4) is placed in the crystal growth furnace cavity formed by the zirconia insulating brick (1), the outside of the zirconia insulating brick (1) is provided with the quartz cylinder (2) and the water cooling copper electrode (3) in order, the heat exchanger (6) is placed at the bottom of the iraurita crucible (4), the infrared thermometer (7) is connected to the iraurita crucible (4), andthe iraurita crucible (4) contains a gallium oxide solution (8) and seed crystal (5). Compared with the prior art, heat exchange method is used for growing crystal, the efficiency is improved, and production cost is reduced; at the same time, grown crystal has the advantages of excellent quality, little stress, low dislocation density, good crystal perfection and optical homogeneity, improved utilization rate of the gallium oxide material, and simplified processing operation.