294 results about "Copper electrode" patented technology

The invention discloses a method for prolonging the service life of a resistance spot-welding electrode, a manufactured resistance spot-welding electrode cap and application, and the method comprises the following steps: taking a chromium-zirconium-copper electrode cap as a base body, grinding the working surface of the base body step by step by adopting abrasive paper, and then sequentially polishing, ultrasonically cleaning and drying to obtain a pretreated base body; performing vacuum zirconium permeation treatment on the pretreated matrix by adopting a permeation agent so as to form a zirconium-rich solid solution diffusion layer in the pretreated matrix, thereby obtaining the matrix subjected to zirconium permeation reinforcement; physical vapor deposition treatment is adopted, and a metal transition layer is deposited on the surface of the solid solution diffusion layer of the matrix subjected to zirconium permeation strengthening; wherein the metal transition layer is a Cr transition layer or a Ti transition layer; and a graphite target and titanium target co-sputtering mode is adopted, and a composite gradient functional layer is sputtered and deposited on the surface of the metal transition layer of the matrix treated in the step S3. The electrode service life of the method is improved by magnitude order, and the effect is extremely remarkable.

The application belongs to the technical field of hydrogen production by ammonia decomposition, and discloses an electrically-assisted low-temperature hydrogen production method by ammonia decomposition, characterized by comprising the following steps: S1, preparing a reactor; the reactor comprises a quartz tube, two pieces of foam copper are installed in the quartz tube, a catalyst is filled between the two pieces of foam copper, each piece of foam copper is connected with a copper electrode, and two thermocouples are installed in the quartz tube and extend into the catalyst; S2, preparing the catalyst; S2.1, the catalyst is synthesized by a solution combustion method, and the precursors of the components of the catalyst are respectively Ni(NO3)2·6H2O, Co(NO3)2·6H2O, Fe(NO3)3·9H2O, Ce(NO3)3·6H2O and Zr(NO3)4·5H2O; and S3, introducing ammonia into the reactor to produce hydrogen; compared with the prior art, the application applies the electric field-assisted catalysis technology to the field of hydrogen production by ammonia decomposition, and develops a catalyst suitable for the electric field-assisted hydrogen production by ammonia decomposition.

The embodiment of the invention relates to the photovoltaic field, and provides a cyanide-free electroplating silver-coated copper conductive material, a preparation method thereof and a crystalline silicon solar cell. The silver-coated copper electrode provided by the embodiment of the invention comprises a copper core and a copper-tin alloy electroplated layer coated on the surface of the copper core, the surface of the pre-plating material is coated with the silver electroplating layer; the surface of the silver-coated copper material is coated with the self-repairing layer; wherein the self-repairing layer comprises a resin film and a pH response type microcapsule, the microcapsule is embedded in the resin film, and the microcapsule is filled with an ammonium molybdate corrosion inhibitor. The copper-silver interface bonding force can be improved through the copper-tin alloy electroplated layer, and the silver layer material does not contain cyanogen and is environmentally friendly; the corrosion inhibitor in the pH response type microcapsule in the self-repairing film layer on the surface of the silver layer is released under a specific pH condition to form a protection film on the silver layer again, so that the self-repairing purpose is achieved, and the dynamic protection effect is achieved.

The invention belongs to the technical field of semiconductors and solar cells, and discloses a preparation method of a low-cost electroplating copper grid line heterojunction solar cell. In order to solve the problems that the cost is high when a metal electrode in a heterojunction solar cell is prepared through traditional screen printing low-temperature paste, and efficiency improvement is limited due to the fact that a narrower grid line is difficult to prepare in a screen printing mode, in-situ pretreatment is carried out on an N face to carry out surface roughening; then, copper electroplating is carried out in a light-induced horizontal electroplating mode to prepare an N-face copper electrode; and then turning over the battery piece to carry out P-surface copper electroplating so as to prepare the heterojunction solar battery with double-surface copper-electroplated grid lines.

A dissimilar steel resistance spot welding process based on differentiated electrode parameter optimization belongs to the field of welding technology. Carbon steel and stainless steel plates are assembled and fixed on a fixture in an overlapping manner as workpieces. Chromium-zirconium-copper electrodes are selected as welding electrodes. The electrode end face diameter is 5mm to 9mm, and the electrode end face diameter on the carbon steel plate side is smaller than the electrode end face diameter on the stainless steel plate side. The electrode end face is fully contacted with the workpiece surface and pre-pressed. Welding is performed using resistance spot welding. During welding, the electrode pressure is 7kN to 10kN, the welding current is 7kA to 10kA, and the welding time is 0.2s to 0.4s. After the power is turned on, the current is removed, and the electrode pressure is maintained to allow natural cooling. At this point, the dissimilar steel resistance spot welding of carbon steel and stainless steel plates is completed. By using electrodes of different sizes on the stainless steel and low-carbon steel sides, the present invention effectively controls the nugget offset and nugget size, thereby improving the quality and stability of spot welding.

The invention relates to the technical field of thermoelectric conversion, solves the technical problems of bending strength, stretchability and the like of an existing flexible thermoelectric device, and particularly relates to a flexible thermoelectric unit based on a thermoelectric thick film, a thermoelectric device and a preparation method of the flexible thermoelectric unit. A group of thermoelectric channels are obtained by combining a thermoelectric thick film material and a slotted copper electrode, heating, welding and curing are performed to obtain a group of thermoelectric channels, a plurality of groups of thermoelectric channels are connected in parallel and inserted by using a connecting electrode to form a flexible thermoelectric unit with a three-dimensional framework, and the flexible thermoelectric unit is integrally placed into a pouring mold after connection and is packaged into a flexible thermoelectric device by a flexible packaging material. The temperature difference between the cold end and the hot end is easy to establish, and excellent bendability and reliability are achieved. Theoretical calculation shows that the flexible thermoelectric device has the stretch rate of about 51%, and the maximum output power under the temperature difference of 200K is 0.126 mW. Compared with an existing flexible thermoelectric device, the flexible thermoelectric device has the advantages of being simple in preparation method process, good in bending and stretching effect, low in cost and the like, and batch preparation can be achieved.

The invention provides an LTCC raw material belt with a high thermal expansion coefficient, an LTCC substrate and a preparation method of the LTCC substrate, the LTCC raw material belt with a smooth surface and a uniform thickness is obtained through tape casting by adjusting the proportion of silicon dioxide ceramic powder, MgTiO3 ceramic, SrTiO3 ceramic, Li2MgSiO4 ceramic, BCBS, ZABS and LASP microcrystalline glass powder, the LTCC raw material belt is sintered in a nitrogen furnace at 880-940 DEG C for 1-3 h, and the LTCC raw material belt can be co-fired with low-cost copper electrode slurry to be flat and tightly attached to the low-cost copper electrode slurry. The LTCC substrate with the thermal expansion coefficient larger than 11 ppm / DEG C is prepared, under the test frequency of 5 GHz, the dielectric constant of the LTCC substrate ranges from 5.1 to 6.1, the dielectric loss ranges from 0.0025 to 0.004, the bending strength ranges from 170 MPa to 230 MPa, the thermal expansion coefficient at the temperature ranging from 30 DEG C to 400 DEG C ranges from 11.0 ppm / DEG C to 13.0 ppm / DEG C, and acid resistance is good.

The utility model discloses a getter film with high initial outbreak rate and lasting moisture absorption rate for a perovskite battery, a support framework layer is an expanded polytetrafluoroethylene microporous film layer, and an active layer is a getter active layer formed by infiltrating a getter into a pore structure of the expanded polytetrafluoroethylene microporous film layer. The composite layer is a getter composite layer formed on at least one side surface of the expanded polytetrafluoroethylene microporous membrane layer through a getter. Through the above mode, the periphery of the active material layer of the perovskite cell in a service environment can be kept in a vacuum state for a long time, and the perovskite cell is ensured to be in a high photoelectric conversion efficiency and a stable state for a long time; the getter film is coated with a back adhesive layer and is non-corrosive, and the getter film can be directly pasted on a glass cover plate of a perovskite cell or on silver, aluminum and copper electrodes for packaging after the release film is uncovered during use; and the initial explosion rate is high, and moisture and oxygen can be quickly absorbed in the packaging cavity within two hours, so that a vacuum state is achieved.

The invention relates to the field of photovoltaic technology, and discloses an interface optimization method for a front-surface seed-layer-free electrode of a photovoltaic cell and a photovoltaic device. The method comprises the following steps: placing a silicon substrate in PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment, and depositing a SiOxNy composite passivation layer with the thickness of 1-10nm on the surface of a transparent conducting layer on the front surface of the silicon substrate through plasma in-situ deposition; printing low-temperature sintered copper paste of which the sintering temperature is less than or equal to 200 DEG C onto the surface of the SiOxNy composite passivation layer; and curing the printed low-temperature sintered copper paste to obtain the front copper electrode. According to the method, a front seed layer is abandoned, direct combination of a front copper electrode and a front transparent conducting layer of a silicon substrate is achieved, an efficient interface inhibition passivation tunneling layer (namely a thin SiOxNy composite passivation layer) is constructed to block a copper-silicon mutual expansion path, interface contact characteristics are optimized, low-temperature sintering type copper paste is matched, contact resistance is reduced, stability is improved, the whole process is low in temperature, and the method is suitable for large-scale production. The method is compatible with an HJT battery manufacturing system and is low in metallization cost.

The invention relates to the technical field of solar cells, in particular to a preparation method of a single-wave precisely doped N-type BC cell. The invention discloses a preparation method of a single-wave precisely doped N-type BC battery. The preparation method comprises the following steps: S1, pre-treating an N-type silicon wafer; s2, performing boron doping on the front surface of the silicon wafer by adopting infrared single-wavelength laser to form a P + shallow junction; performing phosphorus doping on the back surface of the silicon wafer by adopting ultraviolet single-wavelength laser to form an N + region; s3, carrying out single-frequency microwave annealing treatment; s4, preparing a tunneling oxide layer, a boron-doped polycrystalline silicon passivation layer and a surface laminated passivation film; s5, carrying out laser grooving and copper electrode electroplating; s6, cutting the edge of the silicon wafer by adopting single-wavelength femtosecond laser; and S7, low-temperature annealing treatment. According to the method, the doping accuracy is improved, the service life of N-type silicon wafer carriers is ensured, the carrier recombination loss is remarkably reduced, the contact resistance and edge recombination loss is reduced, and the filling factor and the conversion efficiency of the cell are improved.

The invention discloses an HJT solar cell based on a metal grid copper electrode, which comprises an N-type monocrystalline silicon substrate, the front surface and the back surface of the N-type monocrystalline silicon substrate are respectively textured, an I-type amorphous silicon layer and a P-type amorphous silicon layer are sequentially laminated on the front surface of the N-type monocrystalline silicon substrate, and an I-type amorphous silicon layer and an N-type amorphous silicon layer are sequentially laminated on the back surface of the N-type monocrystalline silicon substrate; the surface of the P-type amorphous silicon layer and the surface of the N-type amorphous silicon layer are both covered with transparent conductive oxide layers, the transparent conductive oxide layers are coated with transparent conductive colloid layers, the transparent conductive colloid layers comprise transparent resin binders and conductive substances dispersed in the transparent resin binders, and metal grid copper electrodes are arranged on the transparent conductive colloid layers; through precise design of the line width and the spacing of the metal grid copper electrode, the shading rate can be reduced to the maximum extent while low square resistance and efficient current collection can be ensured, and the requirements of scenes such as building integrated photovoltaic and the like for high-light-transmittance and low-resistance electrodes are met.

The invention discloses a three-dimensional force flexible tactile sensor and a preparation method thereof, the three-dimensional force flexible tactile sensor comprises a layered structure, a top electrode layer and a bottom electrode layer, the top electrode layer comprises a second PET substrate and a top copper electrode, the top copper electrode is installed below the second PET substrate, the top copper electrode is a square common electrode, a copper film with the thickness of 0.006 mm is adopted, the side length is 20 mm, and the thickness of the top copper electrode is 20 mm; the top copper electrode is connected with an external lead through a conductive adhesive; the elastic dielectric layer is located below the top electrode layer and is made of an Ecoflex00-30 material, the elastic dielectric layer comprises micro circular truncated cone structures arranged in an array mode, the height of each micro circular truncated cone is 0.9 mm, and the interval between every two micro circular truncated cones is 1 mm; and the bottom electrode layer comprises a first PET substrate and a bottom copper electrode. The sensor has the advantages of high sensitivity, wide temperature range stability, lightness, thinness, easiness in integration and three-dimensional force synchronous decoupling, and is simple in preparation process and low in cost.

The embodiment of the invention relates to the field of photovoltaic technology, provides a solar cell and a preparation method thereof, and can effectively reduce the resistance of a copper electrode so as to improve the photoelectric conversion efficiency of the solar cell. The preparation method comprises the steps that copper paste is printed on the first surface of the substrate to obtain a substrate to be sintered, and the first surface of the substrate is the front face of the substrate and / or the back face of the substrate; the multiple to-be-sintered substrates are sequentially arranged in a wafer box in a laminated mode, so that a to-be-sintered wafer box is obtained; preset pressure is applied to the to-be-sintered wafer box in the direction intersecting with the first surface of the to-be-sintered substrate; and when the to-be-sintered wafer box bears the preset pressure, the copper paste of the to-be-sintered substrate is sintered.

The application relates to the development and technical field of electrocatalysts, and discloses a benzothiadiazole modified single-atom zirconium-doped metal copper electrode material and a preparation method and application thereof. The preparation method comprises the following steps: dissolving inorganic copper salt and inorganic zirconium salt, adding the inorganic copper salt and the inorganic zirconium salt into an alkaline solution, and performing hydrothermal reaction to obtain a single-atom zirconium-doped copper oxide precursor; dissolving benzothiadiazole, adding the benzothiadiazole into a dispersion solution of the single-atom zirconium-doped copper oxide precursor to obtain a mixed solution; spraying the mixed solution on a polytetrafluoroethylene film substrate loaded with copper nanoparticles to obtain a benzothiadiazole modified single-atom zirconium-doped copper oxide precursor electrode material; and performing electrochemical reduction treatment on the benzothiadiazole modified single-atom zirconium-doped copper oxide precursor electrode material to obtain a benzothiadiazole modified single-atom zirconium-doped metal copper electrode material. The electrode material is applied to an electro-reduction carbon dioxide reaction as a working electrode, exhibits excellent electro-reduction CO2 performance in an acidic environment, and realizes high-value-added C 2+ product with high selectivity.

The invention relates to the technical field of compact ring plasma feeding, in particular to a preionization coaxial device and a working method thereof. According to the technical scheme, the device comprises a power connection stainless steel metal shell and a grounding stainless steel metal shell located below the power connection stainless steel metal shell, and a continuous cavity structure allowing gas to flow is jointly formed inside the power connection stainless steel metal shell and the grounding stainless steel metal shell; the red copper electrode is fixed in an inner hole formed in the top opening end in the electrifying stainless steel metal shell; the PEEK insulator is arranged on the red copper electrode in a sleeving manner and is fixedly mounted between the electrifying stainless steel metal shell and the grounding stainless steel metal shell; a small O-shaped rubber ring is arranged between the electrifying stainless steel metal shell and the PEEK insulator; the preionization coaxial device is installed on the same axial section as an air inlet port of the air valve, and after the air valve is opened, the preionization coaxial device starts to be powered on to work. The core technical problem of cooling the plasma by the trailing neutral gas is effectively solved, comprehensive improvement is brought to the aspects of system integration, operation reliability and economical efficiency, and the pre-ionization device is an efficient, practical and reliable pre-ionization solution.

The invention discloses a czochralski silicon thermal field and a single crystal furnace structure. The thermal field comprises a heater assembly, a middle-upper heat preservation and supporting assembly, a lower heat preservation and crucible supporting assembly and a water-cooling heat insulation assembly, and the heater assembly is fixed on a furnace cover. According to the thermal field structure, the structural form that all assemblies of an existing thermal field are arranged on the furnace bottom plate is changed, a thermal insulation and thermal field supporting structure of the thermal field is fixedly installed in the main furnace chamber, and a heater of the heater assembly is connected to the furnace cover. The heater assembly of the thermal field adopts a hoisting type design, corrosion of oxides to heater feet and copper electrodes is greatly weakened, the service life of the device is prolonged, an upper lifting mechanism is reduced and the time for cleaning the thermal field and replacing a crucible is shortened in cooperation with an open type structure of the furnace bottom of the single crystal furnace, so that the production efficiency is greatly improved, and the production cost is reduced. The safety is better, and the functionality is stronger.

The invention relates to the technical field of vacuum furnace electrode quick connection, in particular to a high-temperature vacuum furnace graphite electrode quick connection structure which comprises a copper bar, a furnace body electrode base, a copper end connecting piece, a graphite end connecting piece and a graphite lock nut. The detachable copper end connecting piece and the graphite end connecting piece are adopted to be connected with the water cooling copper electrode and the graphite special-shaped electrode respectively, the plane where the conductive end A of the copper end connecting piece and the plane where the conductive end B of the graphite end connecting piece are located are machined precisely, sufficient attachment is guaranteed, and the conductive requirement is met. And when the special-shaped electrode in the vacuum furnace is worn and needs to be replaced, the replacement operation can be completed only by quickly disassembling the single end in the vacuum furnace.

The invention discloses a zone-melting high-frequency coil with a water passing structure. A zone-melting method high-frequency coil with a water passing structure comprises a high-frequency coil, a first installation part and a second installation part which are arranged side by side are arranged on the high-frequency coil, the first installation part is detachably and electrically connected with the end of a copper electrode, and a water inlet in butt joint with an annular cooling channel is formed in the second installation part; the water inlet copper rod comprises a copper pipe part used for penetrating through the copper electrode and an exposed butt joint part used for exposing the copper electrode, and the exposed butt joint part is detachably connected with the second mounting part; the copper pipe part is sleeved with a first insulating ring, the first insulating ring abuts against the exposed butt joint part, and the first insulating ring is clamped between the water inlet copper rod and the copper electrode; the end, away from the exposed butt joint part, of the copper pipe part extends out of a copper electrode, and the end, away from the exposed butt joint part, of the copper pipe part is sleeved with a second insulating ring. A water inlet cooling system and a conductive function are realized, the service life of the high-frequency coil is prolonged, and the effect is improved.

The invention belongs to the technical field of welding and connection, and relates to a method for improving conductivity and anti-sticking property of an aluminum alloy resistance spot welding electrode, which comprises the following steps: preparing three areas of an electrode end surface layer, a transition layer and an electrode substrate, and then carrying out integral hot pressing sintering and backward extrusion forming to prepare a composite electrode material. The tungsten carbide is added to improve the wear-resistant and anti-sticking performance of the end face of the electrode, and the graphene is added to improve the conductivity of the electrode; a transition layer is arranged between the electrode substrate and the end surface layer so as to reduce the thermal stress fatigue of the electrode; through backward extrusion process forming, the electrode composite material after hot pressing sintering can be further compacted, the bonding strength of a composite electrode material interface is improved, the dispersion distribution state of graphene in a copper-chromium-zirconium matrix is improved, and the uniformity and conductivity of the material are improved. Compared with a conventional chromium-zirconium-copper electrode, the method has the advantages that the wear resistance of the electrode can be improved by more than 30%, the electric conductivity is improved by about 10%, and the number of continuous spot welding times of the electrode in the spot welding process of the aluminum alloy is increased by more than 35%.

The application provides a precision machining method for earphone mesh mold forming parts, comprising the following steps: designing a copper electrode three-dimensional design drawing according to an earphone mesh mold forming part three-dimensional design drawing; setting a machining strategy and machining parameters according to the copper electrode three-dimensional design drawing, and generating a numerical control machining program, the machining strategy comprising sequentially performing rough machining, semi-finishing machining and finishing machining on the copper electrode blank; using a precision numerical control machine tool to process the copper electrode blank according to the numerical control machining program to form a copper electrode, in the finishing machining, the inner hole on the copper electrode is machined by using a fifth tool with a diameter of 0.3 mm; screening out qualified copper electrodes according to quality detection standards; using a precision numerical control discharge spark machine to perform electric spark machining according to preset discharge parameters and the qualified copper electrodes, and the part blank is made into an earphone mesh mold forming part. The application can solve the problems of hole deformation and size precision after copper electrode machining, and improve the qualified rate of copper electrodes and earphone mesh mold forming parts.

The invention provides a preparation method of a grid line of a perovskite laminated cell, the cell and a preparation method of the cell, and relates to the technical field of solar cells. The preparation method of the grid line of the perovskite laminated cell comprises the following steps: S1, respectively forming electroplating electrode holes in the front surface and the back surface of the perovskite laminated cell to be manufactured by the grid line; s2, double-sided copper electroplating is adopted, a grid line is prepared at an electroplating electrode opening through an oxidation-reduction reaction, and preparation of copper electrodes on the front surface and the back surface of the cell is achieved; wherein an AlOx protection layer is prepared on the front surface of the perovskite laminated cell to be manufactured by the grid line; the electroplating temperature of the double-sided copper electroplating is 20-60 DEG C. According to the invention, the grid line is prepared by combining the AlOx protection layer with the low-temperature electroplating process, so that the cost is reduced, the cell performance is improved, the consumption of silver paste is reduced, and the production cost is reduced.

The invention discloses a droplet nanometer friction / photo-thermoelectric hybrid power generation device and a preparation method thereof. The hybrid power generation device comprises a liquid drop power generator part and a photo-thermal power generator part, wherein the liquid drop power generator part is mainly formed by integrating a capacitor and liquid drop friction power generation, and the photo-thermal power generator part is mainly composed of a temperature difference semiconductor. The preparation method of the device mainly comprises the following steps: carrying out surface treatment on a zinc sheet, so that a layer of candle ash is uniformly attached to the surface of the zinc sheet to obtain the treated zinc sheet; uniformly coating a layer of polydimethylsiloxane (PDMS) on the surface of the candle ash, and heating in an oven for two hours for curing and forming; fixing a copper electrode on the surface of the PDMS, and welding a lead on the copper electrode and the zinc sheet; the temperature difference semiconductor and the zinc sheet are combined together through heat-conducting silicone grease; a radiation cooling plate is attached to the cold end of the temperature difference semiconductor; and wires are respectively welded at the hot end and the cold end of the temperature difference semiconductor. The droplet nanometer friction / photo-thermoelectric hybrid power generation device provided by the invention is simple in structure and convenient to manufacture, can continuously and stably output direct current voltage without depending on single weather, and has a wide application prospect.

The application discloses an n-type bismuth telluride-based thermoelectric element NiFeP alloy interface barrier layer and a preparation method thereof, and belongs to the technical field of thermoelectric materials and devices. The barrier layer in the application is an electroplated NiFeP ternary plating layer, the content of Fe is 15-20 wt%, the content of P is 2-4 wt%, the balance is Ni, the thickness is 5-10 microns, and the barrier layer is prepared through substrate pretreatment, electroplating solution preparation, electroplating deposition and post-treatment. The application also constructs a thermoelectric element containing the barrier layer, and the n-type bismuth telluride thermoelectric material layer is connected by a NiFeP alloy interface barrier layer, a SAC305 solder layer and a copper electrode layer in sequence. The barrier layer has excellent diffusion inhibition effect, the interface bonding strength is greater than 16 MPa and the contact resistivity is less than 8 mu omega cm after aging at 200 DEG C for 144 hours. 2 The preparation process is simple, the cost is relatively low, large-scale production is suitable, and the barrier layer is expected to play an important role in the application field of thermoelectric materials and devices.

The application relates to the development and technical field of electrocatalysts, and discloses a preparation method and application of a proton sponge modified fluorine atom doped metal copper electrode material, which comprises the following steps: adding a dispersion solution of a proton sponge into a dispersion solution of a hydroxyl copper fluoride precursor to obtain a mixed solution; uniformly spraying the mixed solution on a polytetrafluoroethylene film substrate loaded with copper nanoparticles to obtain a proton sponge modified hydroxyl copper fluoride precursor electrode material; and then electrochemically reducing the proton sponge modified hydroxyl copper fluoride precursor electrode material to obtain the proton sponge modified fluorine atom doped metal copper electrode material. The application further discloses the proton sponge modified fluorine atom doped metal copper electrode material obtained by the above preparation method and application of the proton sponge modified fluorine atom doped metal copper electrode material to an electro-reduction carbon dioxide reaction as a working electrode. The electrode material provided by the application exhibits excellent electro-reduction CO2 performance in an acidic environment, and realizes the preparation of high-value C 2+ products with high selectivity under an industrial-grade current density.

To provide a copper etchant for copper seed removal that exhibits adequate removal performance for a copper seed layer and suppresses both surface roughness increase of a copper wire or copper electrode and circuit narrowing.SOLUTION: A copper etchant for removing a copper seed layer, which contains an organic acid and hydrogen peroxide and has a pH of 5.0 to 8.0.SELECTED DRAWING: None

This invention relates to the field of thermal management and sensing monitoring technology, specifically an intelligent sensing system and method for the working fluid state within a pulsating heat pipe based on temperature monitoring. The method involves arranging pipe sections on a pulsating heat pipe, composed of alternating frictional and non-frictional materials. A ring-shaped copper electrode is attached to the outer wall of the frictional material section and connected to an electrometer, while thermocouples are used to measure temperature in the non-frictional material section. As the working fluid flows through the frictional section, it generates solid-liquid (vapor) frictional charge signals, which are transmitted synchronously with the temperature signal to a processing system. Feature extraction and model analysis are then used to perceive the working fluid's flow state and phase change characteristics in real time, thereby achieving intelligent sensing of the working fluid flow and heat transfer characteristics within the pipe. This invention has advantages such as simple structure, high real-time performance, high sensitivity, and non-invasive monitoring, and can be widely applied to the monitoring of the working fluid state and thermal performance analysis and evaluation of pulsating heat pipes and other phase change heat transfer components.

This utility model discloses a photosensitive drum counting device, comprising: a flat-panel metal detector, a column disposed on one side of the flat-panel metal detector, and a main control device disposed on the top of the column and electrically connected to the flat-panel metal detector; the flat-panel metal detector is used to sense the copper electrode plates on the top of each photosensitive drum in the packaging box and outputs an induced voltage corresponding to the number of copper electrode plates; the main control device calculates the number of copper electrode plates based on the induced voltage, and thus determines the number of photosensitive drums in the packaging box. This photosensitive drum counting device can automatically count the number of photosensitive drums in a single packaging box and can issue an alarm when there are fewer or more photosensitive drums than required, avoiding situations where there are fewer or more photosensitive drums in the shipped packaging boxes. It solves the problem of inaccurate product quantity per box caused by manual counting and weighing differences, reduces manual labor intensity, and improves the automation level of the production line.

This utility model discloses a SiC packaging structure based on flip-chip bonding, including a heat sink and a SiC substrate disposed on the heat sink. A bottom copper electrode is formed on the surface of the SiC substrate, and the bottom copper electrode is connected to the SiC substrate through a bonding layer. Multiple chips connected in parallel are disposed on the bottom copper electrode, and the top of the multiple parallel chips is connected to a top copper electrode. The bottom copper electrode and the multiple parallel chips, as well as the top copper electrode and the multiple parallel chips, are connected through a copper sintering layer. The packaging structure reduces the use of traditional bonding wires through flip-chip design and copper sintering process, significantly reducing parasitic inductance and contact resistance, and improving thermal conductivity and electrical performance. At the same time, the top and bottom copper electrodes achieve double-sided electrode leads, effectively improving the integration and heat dissipation efficiency of the package.

A device and method for testing circular tube rupture under internal pressure in a nuclear reactor accident. The device comprises a circular tube assembly, a cylinder assembly, a gas cylinder, a gas booster, a direct current power supply, a steam generator, and a vacuum pump. The circular tube assembly comprises a metal tube, a core block, a cooling flange, a copper electrode, a ferrule-type reducer, a pressure-inducing tube, a pressure-charging tube, and a pressure transmitter. The metal tube is heated by a direct current power supply and pressurized by the gas cylinder and the gas booster. The cylinder assembly comprises a stainless steel shell, an annular heat shielding layer, an annular tungsten heater, an annular platinum bushing, a cylindrical thermal insulation pad, and a cover. The annular tungsten heater is heated by a direct current power supply and protected from oxidation by air by a vacuum pump. The steam required for the experiment is provided by a steam generator. The device is capable of carrying out transient heating rupture experiments, isothermal creep rupture experiments, and oxidation experiments on the inner surface of the circular tube after rupture under internal pressure. The invention also provides an experimental method.

This disclosure provides an electrolytic cell device and method for simultaneously achieving desalination and electrocatalytic nitrate reduction, belonging to the field of electrochemical technology. The device uses activated carbon (AC) as the anode and a halogen-modified copper electrode as the cathode, physically separated into two electrochemically coupled chambers by a metal Pt or activated carbon interlayer. For the first time, it couples the electrocatalytic nitrate reduction to ammonia (NRA) module and the desalination module into an integrated system. This device can simultaneously achieve highly efficient desalination and electrocatalytic nitrate reduction, with a desalination rate reaching 188 μg / cm³. ‑ ²min ‑ ¹, Ammonia yield reached 1.16 mgh ‑ ¹cm ‑ ², adaptable to a wide salinity range, solving the problems of low desalination rate and narrow salinity adaptability in existing coupled systems, and achieving efficient synergy between nitrate resource recovery and seawater desalination. This disclosure is applicable to the treatment of marine wastewater or industrial wastewater containing nitrates.