26 results about "Silver electrode" patented technology

The application discloses a kind of bromine iodine lead cesium perovskite solar cells of doping magnesium bromide prepared in low humidity environment and preparation method thereof, belong to perovskite photovoltaic technical field, including ITO transparent conductive glass and sequentially coated on ITO transparent conductive glass dense layer TiO2, SnO2 layer, bromine iodine lead cesium perovskite light-absorbing layer of doping magnesium bromide, 2,2',7,7'-tetra [N,N-di (4-methoxyphenyl) amino] -9,9'-spirobifluorene hole transport layer of doping lithium salt, silver electrode, and its preparation method is disclosed, the application is by doping into bromine iodine lead cesium perovskite precursor doping different molar magnesium bromide to optimize the energy level matching between perovskite and electron transport layer and hole transport layer, effectively reduce the recombination probability of carrier and improve the mobility of carrier, improve the crystal quality of perovskite thin film, to realize the light absorption coefficient of optimization light-absorbing layer, finally realize the improvement of bromine iodine lead cesium inorganic perovskite solar cell photoelectric conversion efficiency.

The utility model belongs to the technical field of evaporation mask carrier plate, especially relates to a perovskite crystalline silicon laminated solar cell top silver electrode evaporation mask carrier plate, include: silver plating carrier plate is equipped with a plurality of battery area for placing battery on the silver plating carrier plate, be equipped with transparent conductive oxide film surface on the battery area, be equipped with main shan on the transparent conductive oxide film surface, be equipped with a plurality of thin shan in main shan, the test hole is seted up in one side of main shan, firm fixation: ensure that the bottom battery is completely fixed in the evaporation process, avoid displacement. Nondestructive taking and placing: after evaporation, battery taking and placing operation is simple and convenient, and the risk of fragmentation is greatly reduced. Precise positioning: silver main grid line and thin grid line can be evaporated in the preset target area extremely accurately, ensure that grid line pattern accurately covers non - transparent or specified area, thereby maximum electron collection efficiency, effectively improve the overall performance of battery. Increase efficiency: support multiple battery synchronous evaporation.

The application relates to a flexible tactile sensor prepared by a laser direct writing graphene method and belongs to the technical field of flexible sensors. The upper half of the sensor is a graphene film, the lower half is a silver electrode film, the middle is a TPU film connecting layer, and the bottom encapsulation layer is encapsulated. The graphene film is generated by scratching the surface of a PI film with a 455nm laser, a mask plate pattern designed in advance in CAD is engraved by laser, a silver electrode film is deposited on the PI film by a physical vapor deposition method, then the two are connected in a face-to-face mode through a high-temperature melted TPU film, and a waterproof tactile sensor array is formed after being combined by pp encapsulation. The sensor has wide application potential in the fields of bionic robots, intelligent prostheses and the like. The sensor has the characteristics of high sensitivity, wide detection range, reliable piezoresistive performance and high real-time performance, the preparation process is simple, the cost is low, and the problems of high cost and complexity in the preparation of previous micro-nano structures are solved.

The application discloses a PZT-based textured piezoelectric ceramic and a phase transition assisted polarization preparation method and application thereof, and belongs to the technical field of piezoelectric materials. The preparation method comprises the following steps: preparing PMeN-PZT matrix powder; preparing a textured piezoelectric ceramic; and sequentially polishing the textured piezoelectric ceramic, sintering silver electrodes and performing phase transition assisted polarization to obtain the PZT-based textured piezoelectric ceramic; wherein the phase transition assisted polarization step is: heating the textured piezoelectric ceramic after sintering silver electrodes to a polarization temperature, the polarization temperature is higher than the trigonal-tetragonal phase transition temperature and lower than the Curie temperature, and the polarization is performed under a polarization electric field of 300 V / mm-1000 V / mm, then the polarization is naturally cooled to room temperature, and the electric field is removed. The technical problems of low piezoelectric / electromechanical / dielectric performance caused by insufficient polarization in traditional heating polarization and the technical problem that piezoelectric materials are difficult to have high piezoelectric performance and high Curie temperature at the same time are solved.

This invention relates to the field of transducer technology, specifically to an integrated coupled piezoelectric ultrasonic transducer, comprising an aluminum alloy cylindrical shell; silver-impregnated electrodes on both the upper and lower surfaces of the sensing unit, which simultaneously excite longitudinal and transverse waves under high-voltage pulse excitation; a backing damping block for absorbing reverse sound waves and improving signal clarity; a stainless steel bottom cover fixed to the open end of the shell and tightly coupled to a piezoelectric ceramic sheet, serving as protection and sound wave transition; an integrated coupling layer consisting of a flexible solid coupling sheet pre-attached to the outside of the stainless steel bottom cover; and a magnetic fixing ring, a ring-shaped neodymium iron boron permanent magnet embedded in the shell, for providing attraction force to the ferromagnetic bolts to stabilize the coupling pressure. Its advantages include: extremely simplified structure, compact size and light weight, low cost, elimination of measurement errors, improved measurement repeatability, and greatly simplified on-site operation procedures.

This invention discloses a method for the efficient recovery and reuse of silver-containing electrode materials, specifically: firstly, the electrode waste is leached with sufficient nitric acid to fully dissolve the silver element in the waste and form Ag. + Subsequently, excess sodium chloride was added as a precipitant, and Ag in the solution was removed through a chemical reaction. + The silver is converted into silver chloride precipitate, achieving initial separation of silver from other impurities. Finally, sodium carbonate is used as a reducing agent to reduce the AgCl precipitate under high temperature conditions, ultimately yielding high-purity elemental silver. The elemental silver can be further processed into industrial raw materials such as silver nitrate for reuse. This invention features a simple and easy-to-implement operation process, requiring no complex equipment or high costs. Furthermore, the entire process is environmentally friendly, with no serious pollution problems, possessing outstanding advantages in both economy and environmental protection. This makes it highly valuable for large-scale industrial green recycling and has broad prospects for promotion.

This invention relates to the field of perovskite solar cell technology, and discloses a method for preparing a hole transport layer and a perovskite solar cell. The method utilizes spiro-OMeTAD as the hole transport layer, mixes ethyltriphenylphosphine bis(trifluoromethanesulfonyl)imide salt (ETPTFSI) in a CB solvent, forms a precursor solution through photopretreatment, and then forms the hole transport layer through a coating process. The method also explores the discovery of ethyltriphenylphosphine cation (ETP... + The lowest unoccupied molecular orbital (LUMO) energy level is similar to that of organic high conductivity layers (HTLs), and upon photoexcitation, it accepts an electron from the organic semiconductor and forms a neutral radical ETP. • ETP • The unpaired electrons in the chlorobenzene have high energy and can break the C-Cl bond in chlorobenzene. This reaction chain promotes the efficient doping of organic HTL by the solvent CB through CB. In addition, ETPTFSI has extremely low hygroscopicity and a large space size, which helps to improve moisture resistance and reduce the migration of iodide ions to the HTL / silver electrode, thereby significantly improving stability.

The application provides a silver paste for inhibiting electrode diffusion and a preparation method thereof. According to mass percentage, the silver paste comprises 50-90wt% silver powder, 0-20wt% glass powder, 0.05-15wt% hydrophobic filler, 0.01-5wt% dispersant, 0-10wt% adhesive, 8-30wt% solvent, 0-5wt% plasticizer and 0-1wt% adhesion aid. The hydrophobic filler is inorganic oxide particles after hydrophobic modification. The application forms a silver diffusion isolation layer between silver and green ceramic sheets through the principle that the polarity of the dispersant in the silver paste changes after heating, which causes the migration and precipitation of the hydrophobic filler, so that the silver ions in the silver layer and the glass phase in the ceramic layer cannot diffuse with each other, thereby improving the reliability of the LTCC, and the LTCC substrate which can effectively inhibit silver diffusion and maintain excellent conductivity of the silver electrode and has controllable cost can be prepared.

The application provides application of hafnium oxide-based memristor in preparation of electronic switches and belongs to the technical field of microelectronic materials and devices. The hafnium oxide-based memristor used in preparation of the electronic switches has a bidirectional threshold characteristic, and the structure thereof comprises, from bottom to top, an inert bottom electrode, an intermediate layer, a buffer layer and an active top electrode. The intermediate layer is a hafnium oxide film subjected to plasma treatment and annealing double treatment, the buffer layer is a silver indium antimony tellurium film, and the active top electrode is a silver electrode. The memristor can be converted from a high resistance state to a low resistance state at a threshold voltage under positive and negative voltages, and can spontaneously recover to the high resistance state when back scanning to a holding voltage. The hafnium oxide-based memristor is used in preparation of the electronic switches, the double treatment process and the AIST buffer layer complement each other, and the hafnium oxide-based memristor is endowed with comprehensive performance, so that the application requirements of high-performance and low-power-consumption electronic switches can be fully met, and the practical development of the technology is promoted.

The present invention belongs to the field of electronic information functional materials and microelectronic devices, and specifically provides a Li 2.12 MgTi3O8-based microwave dielectric ceramic material and a preparation method thereof, aiming to solve the problem that the Li 2.12 MgTi3O8 microwave dielectric ceramic cannot be applied to LTCC due to its high sintering temperature. The present invention first proposes to add LiF with a low sintering temperature as a sintering aid to the Li 2.12 MgTi3O8-based microwave dielectric ceramic material, and scientifically defines its addition amount as x wt%, 0.75 < x ≤ 1.50, so as to reduce the sintering temperature of the Li 2.12 MgTi3O8 microwave dielectric ceramic below the melting point of the silver electrode, and achieve sintering at 850°C to 950°C, thus meeting the application requirements of LTCC; at the same time, the quality factor Q×f is increased to 81000 GHz to 98000 GHz, and the relative dielectric constant ε r is 22.5 to 26.5, and the resonant frequency temperature coefficient τ f is 3.0 to 6.5 ppm / °C. It can be used as a substrate material for electronic devices such as antennas, dielectric resonators, filters, and microstrip lines, and has important application prospects in the fields of microwave communication, radar systems, satellite communication, etc.

The application discloses a method for synthesizing 2,3-dichloropyridine through electrochemical dechlorination, which comprises the following steps: S1, constructing an electrolytic cell with an activated silver electrode as a cathode and a chemically inert material as an anode; S2, adding a solution containing 2,3,6-trichloropyridine into the electrolytic cell of S1 as a catholyte, and adding an aqueous solution of sulfuric acid or hydrochloric acid as an anolyte; S3, connecting a power supply, making the current pass through the solution containing 2,3,6-trichloropyridine from the anode to the cathode, and performing electrochemical reduction dechlorination reaction on the 2,3,6-trichloropyridine to generate the target product 2,3-dichloropyridine. The application replaces the platinum group noble metal electrode with the activated silver electrode, greatly reduces the cost of the electrode material, avoids the problems of poisoning and deactivation of the platinum group noble metal, and improves the current efficiency and selectivity.

The application discloses a preparation method of a silver electrode and belongs to the technical field of metalization of electronic components. The method comprises four steps of glass raw material preparation, glass powder preparation, silver paste preparation and silver electrode sintering, adopts modified nickel powder, tungsten powder and other conductive additives to replace part of silver, matches SiO2-B2O3-Bi2O3-Na2CO3-Al2O3 glass powder, and controls the mass percentage of silver powder to be 12-72 wt.%. The application solves the defects of high silver content, high cost or poor conductive performance in the prior art, the prepared silver electrode has a compact structure and stable conductivity, the process is simple, the silver electrode can be industrially produced, and the production cost of electronic components is effectively reduced.

The application discloses a method for step-by-step recovery of aluminum and silver from crystalline silicon solar cells, comprising the following steps: pretreatment: the waste crystalline silicon photovoltaic module is physically disassembled to obtain solar cell fragments; alkaline leaching of aluminum: the solar cell fragments obtained in the pretreatment step are placed in a potassium hydroxide solution for leaching reaction, and after filtration, an aluminum-containing filtrate and a cell fragment with removed aluminum back field are obtained; aluminum recovery: carbon dioxide is introduced or acid is added into the aluminum-containing filtrate obtained in the alkaline leaching of aluminum step, high-purity aluminum hydroxide is precipitated, and after calcination, an aluminum oxide product is obtained; acid leaching of silver: the cell fragment with removed aluminum back field is placed in a nitric acid solution for leaching reaction, a silver electrode is dissolved in nitric acid to generate a silver nitrate solution, and after filtration, a silver-containing filtrate and a solid silicon fragment with silicon as a main component are obtained; and silver recovery: the silver-containing filtrate obtained in the acid leaching of silver step is recovered into elemental silver through electrolytic deposition.

The application relates to a coating structure and an electronic device, the coating structure comprising a substrate and a functional layer arranged in sequence, the functional layer comprising a silver electrode layer and a moisture absorption layer for absorbing water vapor, the silver electrode layer being in contact with the moisture absorption layer, and the functional layer being provided with a barrier layer for preventing water and oxygen on the side away from the substrate. The presence of the barrier layer can isolate the silver electrode layer from water vapor and oxygen in the external environment, and the moisture absorption layer can absorb water vapor, further preventing water vapor from penetrating into the silver electrode layer through the barrier layer, so that the cooperation of the barrier layer and the moisture absorption layer can block water vapor and oxygen from entering the silver electrode layer, so that the silver electrode layer is in an isolated state from water vapor and oxygen in the external environment, thereby avoiding the occurrence of the poor chemical stability and the reduced conductivity of the silver electrode layer due to the occurrence of silver migration as much as possible, and prolonging the service life of the silver electrode layer.

The application discloses a flexible ion transmembrane temperature sensor with superfast response speed and a preparation method thereof. A PVA aqueous solution and a PSSA composite ion solution are combined, spin-coated and solidified to form a PSSA / PVA double-layer structure, an AAO template ion channel is prepared at the interface, DMSO is introduced to construct an ion gradient, silver electrodes are deposited on both sides of the double-layer structure through magnetron sputtering, and a PDMS / vertical CNT array composite material is transferred to the surface of the electrodes to form an encapsulation layer, so that the flexible ion transmembrane temperature sensor with superfast response speed is prepared. The flexible ion transmembrane temperature sensor with superfast response speed prepared by the application has excellent response recovery speed, temperature sensing resolution and mechanical interference resistance.

This invention belongs to the field of back contact battery technology, specifically relating to a back contact battery, its fabrication method, and its application. It further includes a multi-layer structure formed by sequentially distributing a thin nickel-containing layer, a transparent conductive film layer, a connection barrier layer, a copper layer, and a connection protection layer on the entire outer surface of the N-type and P-type semiconductor regions, covering them completely outwards. An insulating trench is formed on the portion of the multi-layer structure outside the superposition region, exposing the P-type semiconductor region within the insulating trench. This invention eliminates three independent bottlenecks in traditional silver electrode structures—ITO lateral resistance, metal line resistance, and high cost—in one fell swoop. It significantly improves the fill factor, short-circuit current density, and open-circuit voltage while substantially reducing silver consumption, thereby enhancing battery conversion efficiency. Simultaneously, it greatly reduces reverse dark current, resulting in high reliability. Furthermore, since it eliminates the need for a silver grid and main grid, subsequent assembly involves direct connection of solder ribbons, simplifying the process and reducing costs significantly.

This invention provides a quartz crystal osmotic membrane (QCM) based on a hydroxyl-functionalized covalent organic framework (COM), its preparation method, and its application. The QCM comprises a quartz wafer with a silver electrode, the surface of which is coated with the hydroxyl-functionalized COM. The hydroxyl-functionalized COM is a COM film or COM nanoparticle prepared by reacting 1,3,5-tris(4-aminophenyl)benzene with 2,5-dihydroxy-terephthalaldehyde. The framework of the hydroxyl-functionalized COM contains a large number of uniformly distributed hydroxyl functional groups, which can specifically recognize H2S through hydrogen bonding and acid-base interactions, exhibiting extremely high selectivity for H2S. This COM has an ordered mesoporous structure and a high specific surface area, effectively enriching H2S molecules and improving detection sensitivity. The QCM based on this material can operate at room temperature, with response and recovery times not exceeding 14 s and a detection limit as low as 5 ppm, meeting the real-time requirements of industrial safety and environmental monitoring.

The application discloses a novel crystal silicon solar cell composite electrode and a preparation method thereof, and belongs to the technical field of crystal silicon solar cells. The novel crystal silicon solar cell composite electrode comprises grid lines arranged on the surface of a cell piece, the grid lines comprise a plurality of main grids and a plurality of auxiliary grids, the plurality of main grids are parallel and spaced apart, the plurality of auxiliary grids are parallel and spaced apart, the plurality of main grids and the plurality of auxiliary grids are distributed in a net structure, each main grid comprises a main grid silver electrode and a plurality of pairs of lap joints, the plurality of pairs of lap joints are distributed along the direction of the main grid silver electrode, each pair of lap joints is symmetrically distributed on the two sides of the main grid silver electrode, each auxiliary grid comprises a plurality of auxiliary grid non-silver metal electrodes, the end part of the auxiliary grid non-silver metal electrode close to the main grid silver electrode corresponds to a lap joint, and the surface of each auxiliary grid non-silver metal electrode is covered with a light-cured glue layer. The application provides a novel crystal silicon solar cell composite electrode structure, and aims to solve the problems of high metal cost of a current photovoltaic cell and poor copper oxidation resistance.

This utility model relates to the field of functional materials technology, specifically to a multilayer piezoelectric ceramic structure. It includes a porous ceramic layer and piezoelectric ceramic layers disposed on both sides of the porous ceramic layer. In this application, the pores of the porous ceramic layer contain air. During polarization, the air is ionized to form a conductive layer in the porous ceramic layer, thereby significantly increasing the piezoelectric coefficient. Furthermore, by replacing the silver electrode layer of the Schottky contact with a porous ceramic layer, this application effectively reduces leakage current and extends the service life of the piezoelectric ceramic structure.

This invention provides a small-sized thermistor for flexible solar panel temperature monitoring, belonging to the field of electronic temperature sensing element technology. It includes an aluminum alloy shell; a negative temperature coefficient (NTC) thermistor ceramic body with silver electrodes printed at both ends; the NTC thermistor ceramic body encapsulated within the aluminum alloy shell; two leads, each with one end soldered to a silver electrode and the other end extending from the aluminum alloy shell; a low-temperature resistant protective resin encapsulation layer encapsulating the solder joint between the leads and the silver electrodes; and a low-temperature resistant potting resin encapsulation layer encapsulated within the aluminum alloy shell. This small-sized thermistor for flexible solar panel temperature monitoring features extremely small size and light weight, enabling temperature measurement over a wide range from -100℃ to 120℃. It is compatible with various satellite flexible solar panel substrates and also possesses advantages such as radiation resistance, strong high and low temperature resistance, and a stable encapsulation structure.

This invention discloses a perovskite solar cell encapsulation process, comprising: removing excess conductive film from the surface of a bottom glass layer using a laser emitted from a laser system; forming a perovskite solar cell core layer on the bottom glass using deposition and solution methods; coating a silver electrode extending to the edge of the bottom glass, the silver electrode being conductively connected to the perovskite solar cell core layer; covering the conductive glass with a cover glass to form a packaged product, wherein the portion of the cover glass in contact with the conductive glass has a first welding path, and the portion of the cover glass in contact with the silver electrode has a second welding path; the laser emitted by the laser system for welding along the first welding path has first laser parameters, and the laser for welding along the second welding path has second laser parameters; performing annealing treatment after welding to complete the encapsulation of the perovskite solar cell; when two distinctly different interface material combinations appear on the welding path, reliable sealing of the complete device is achieved in a single welding process.

The utility model relates to solar cell technical field discloses a novel TOPCon battery and novel solar cell module. The novel TOPCon battery, including silicon wafer, the back surface of silicon wafer is equipped with passivation contact structure, the electrode contact area of passivation contact structure back surface is equipped with first finger electrode, the line width of first finger electrode is equal to or less than 12mu m, and first finger electrode includes the first titanium metal electrode, first aluminum metal electrode and first copper metal electrode that passivation contact structure is sequentially ohmic contact, the non electrode contact area of passivation contact structure back surface is equipped with first passivation antireflection film, and the back of first finger electrode extends first passivation antireflection film back surface. The novel TOPCon battery is matched with the above-mentioned narrow line width first finger electrode through passivation contact structure, can reduce shading loss, can improve passivation effect, reduces contact resistance, improves the conversion efficiency of battery, and first finger electrode adopts non-silver electrode material, and material cost is lower.

The application discloses a kind of micro flexible multispectral detector and preparation method thereof.The method first uses spin coating method to be on the PET flexible substrate of spin coating hole transport layer PEDOT:PSS with organic donor precursor solution, donor layer film is prepared, then different patterns mask is covered in upper layer in sequence, 6TBA, IT-4Cl, 4TIC-4F and 6TIC-4F acceptor material solution are respectively spin coated in different areas, acceptor layer array is prepared, finally, mask is used in sequence Vacuum evaporation LiF barrier layer and silver electrode, and micro flexible multispectral detector is prepared.The organic narrow-band multispectral flexible detection array constructed by the application does not need optical element light filtering, and narrow-band multispectral reconstruction with a response half-width of at least 50nm can be realized through software algorithm, and the spectral resolution can reach 50nm, providing a way for flexible wearable narrow-band multispectral detector.

This invention provides an intrinsic thin-film heterojunction solar cell and its fabrication method. The fabrication method includes the following steps: depositing an intrinsic amorphous silicon layer as a buffer layer on a substrate, the thickness of the buffer layer being less than 10 nm; heat-treating the buffer layer in an inert atmosphere; depositing a doped amorphous silicon layer and a TCO layer on the buffer layer; heat-treating the doped amorphous silicon layer and the TCO layer in an inert atmosphere to obtain an intrinsic thin-film heterojunction solar cell structure layer; fabricating a silver electrode on the intrinsic thin-film heterojunction solar cell structure layer to obtain an intrinsic thin-film heterojunction solar cell; an intrinsic amorphous silicon layer is inserted between the P-N junctions as a buffer layer, and the intrinsic amorphous silicon layer has a good passivation effect on the crystalline silicon surface, which can significantly avoid carrier recombination, achieve higher minority carrier lifetime and open-circuit voltage, and thus improve the battery performance.

The application discloses a composite active layer for photoelectric detection, a wide-band high-sensitivity photoelectric detector and a preparation method thereof, relates to the technical field of photoelectric detection, and solves the problems that the wide-band response of an existing detector is not comprehensive, the responsivity and sensitivity are limited under low light intensity, and the response speed and stability are difficult to be simultaneously considered. The active layer comprises a perovskite light absorption layer and a BHJ bulk heterojunction layer attached to the surface of the perovskite light absorption layer; wherein the BHJ bulk heterojunction layer is composed of PTB7-Th and SiOTIC-4F. The detector comprises, from bottom to top, an ITO conductive substrate layer, a SnO2 electron transport layer, the composite active layer for photoelectric detection, a PTAA hole transport layer and a silver electrode layer. The detector has the core advantages of wide band, high sensitivity, fast response and high stability, and has good practical application value and broad market prospect in the fields of photoelectric detection such as environmental monitoring, biological imaging, optical communication, security monitoring and industrial detection.