340 results about "Silver electrode" patented technology

The invention discloses silver-nickel conductive paste for a BC battery and a preparation method of the silver-nickel conductive paste, and belongs to the technical field of photovoltaic batteries. The silver paste comprises the following raw materials in percentage by weight: 39-69% of micron silver powder, 20-50% of modified nickel, 2-6% of glass powder, 0.1-10% of a dispersing agent, 0-1% of silicone oil and the balance of an organic carrier, the modified nickel is simple substance nickel powder subjected to modification treatment, and the modification treatment mode is surface organic modification and ball milling modification or surface inorganic modification and ball milling modification. The nickel powder is adopted to replace part of silver powder, the prepared conductive silver nickel paste is used for a BC battery, the cost is remarkably reduced, the reliability is high, and the conversion efficiency is superior to or equivalent to that of traditional all-silver electrode paste.

The invention discloses a solar cell and a photovoltaic module, and relates to the field of photovoltaic technology. The solar cell includes: a semiconductor substrate having a first semiconductor layer on a first surface; the passivation layer at least covers one side, deviating from the semiconductor substrate, of the first semiconductor layer; the seed layer penetrates through the passivation layer and is conductively connected with the first semiconductor layer; at least part of the first grid line is arranged on the side, away from the semiconductor substrate, of the seed layer, and the first grid line is formed by base metal slurry. The height of the seed layer is h1, the height of the first grid line is h2, and 0.08 < = h1 / h2 < = 0.8. Compared with the prior art in which the silver paste burns through the passivation layer to integrally form the silver electrode, the amount of the silver paste required for manufacturing the whole electrode structure of the solar cell can be reduced, and the manufacturing cost of the whole electrode structure is reduced.

The utility model relates to the technical field of resistors, in particular to an anti-vulcanization moisture-resistant thick-film resistor. According to the technical scheme, the resistor comprises an aluminum oxide ceramic substrate, a resistor body is printed on the upper surface of the aluminum oxide ceramic substrate, front electrodes are printed at the two ends of the resistor body, extending parts of the two ends of the resistor body are covered with the front electrodes, back electrodes are printed on the lower surface of the aluminum oxide ceramic substrate, and the aluminum oxide ceramic substrate is provided with side electrodes. The front electrode, the back electrode and the side electrode are all silver electrodes, a nickel electrode is arranged outside the silver electrodes, a tin electrode is arranged outside the nickel electrode, and a first anti-vulcanization layer is arranged between the silver electrode and the nickel electrode at the two ends of the resistor body. A second anti-vulcanization layer is arranged between the nickel electrode and the tin electrode at the two ends of the resistor body, and a first protective layer and a second protective layer are arranged on the surface of the resistor body.

The invention relates to a preparation method of a high-power lead manganese niobate-lead zirconate titanate piezoelectric ceramic material. The preparation method comprises the following steps: burdening and mixing, pre-sintering, secondary ball milling, forming, rubber discharging, sintering, machining, silver electrode firing and polarization testing. According to the preparation method of the piezoelectric ceramic material, the lead manganese niobate-lead zirconate titanate piezoelectric ceramic material prepared through optimization of a B-site doping formula has the mechanical quality factor of 2000 and the piezoelectric property of d33-310 pC / N, the dielectric loss is 0.3%, the mechanical quality factor of 1500 and the piezoelectric property of d33-350 pC / N, and the dielectric loss of the ceramic is 0.45%; and meanwhile, the piezoelectric ceramic material comprises pure PMnN-PZT and a trace amount of Co2O3 doped PMnN-PZT piezoelectric ceramic.

The invention discloses a method for recycling EVA and silver of a waste photovoltaic panel laminated piece, which comprises the following steps: S1, removing an aluminum frame and a junction box, and stripping a back plate; s2, EVA on the back of the laminated part is removed; s3, EVA on the front face of the laminated piece is removed; and S4, recovering the silver electrode of the silicon battery piece. The invention provides the method for accurately controlling the EVA (Ethylene Vinyl Acetate) at the front part and the back part of the photovoltaic laminated piece to be cleanly and quickly separated and separating the silver electrode on the silicon battery piece by using laser as a main process, chemical reagents are not needed in the whole process, crushing and sorting are not needed, and the silver with high additional value and the complete silicon battery piece are obtained; the method has the characteristic of efficient and accurate utilization of energy. According to the method, the non-destructive rapid recovery of EVA is realized, and meanwhile, a silver recovery method with low environmental influence is adopted, so that great convenience is provided for subsequent efficient remanufacturing, and considerable circular economic benefits can be brought.

The invention discloses a defect passivation perovskite solar cell and a preparation method thereof, and belongs to the technical field of solar cell preparation. The preparation method comprises the following steps: mixing a SnO2 aqueous solution and an organic hydrochloride solution, and carrying out ultrasonic treatment to obtain an organic hydrochloride doped SnO2 precursor solution; preparing a halogen-containing compound solution and an organic salt solution as a perovskite precursor solution; the preparation method comprises the following steps: uniformly mixing Fk209, tBP, Li-TFSI, Spiro-OMeTAD and chlorobenzene or tBP, Li-TFSI, P3HT and chlorobenzene to obtain a hole transport layer precursor solution; the preparation method comprises the following steps: preparing a SnO2 electron transport layer, a perovskite absorption layer and a hole transport layer on a substrate material in sequence, and finally preparing a molybdenum oxide layer and a silver electrode on the hole transport layer. The problem that a large number of defects exist in existing perovskite solar cell preparation is solved, and the carrier transmission capacity and the photoelectric conversion efficiency are improved.

The invention relates to a manufacturing method of a novel high-temperature high-performance piezoelectric ceramic material, the manufacturing method is improved on the basis of a lead zirconate titanate piezoelectric ceramic material, the prepared ceramic material is suitable for a high-temperature environment through doping and process optimization, and the manufacturing method comprises the following steps: burdening and mixing, pre-sintering, secondary ball milling, granulating and forming, glue discharging and sintering. And machining, silver electrode firing and polarization testing are carried out. According to the manufacturing method of the piezoelectric ceramic material, components of the lead zirconate titanate piezoelectric ceramic are optimized, and neodymium oxide is doped into the lead zirconate titanate piezoelectric material, so that the performance of the ceramic is improved. By doping neodymium oxide, volatilization of the piezoelectric ceramic in lead can be effectively inhibited, deformation of the ceramic is reduced, and the piezoelectric ceramic is suitable for application and industrial production. Meanwhile, the Curie temperature of the ceramic is not obviously reduced, so that the preparation of the high-temperature piezoelectric ceramic is realized.

The utility model discloses a TOPCon solar cell structure, which relates to the field of solar cells and sequentially comprises a first silver electrode, a first antireflection film layer, a boron doping layer, a silicon substrate, a tunneling layer and a polycrystalline silicon doping layer in a single direction, and further comprises a second antireflection film layer, a diffusion barrier layer and a second silver electrode. One grid line of the diffusion barrier layer is arranged between two adjacent grid lines of the second antireflection film layer, and the grid line of the second silver electrode is located on the grid line of the diffusion barrier layer; a titanium nitride layer TiN or a titanium oxynitride layer TiON is deposited between the polycrystalline silicon layer and the metal electrode to serve as a diffusion barrier layer, and the second silver electrode is of a grid line structure instead of full coverage; according to the structure, the characteristics of high conductivity and electron selective transmission of titanium nitride or titanium oxynitride are utilized, so that electrons have low resistance during transmission, and electron collection is facilitated. And by adopting a grid line structure, the absorption of titanium nitride or titanium oxynitride on long-wave-band light is effectively avoided, and the double-sided topcon battery is very suitable for the existing double-sided topcon battery.

The invention provides an electrode structure of a solar cell, and relates to the technical field of solar cells, the electrode structure comprises an aluminum grid line and a silver electrode, the inner ring edge of the aluminum grid line covers the outer ring edge of the silver electrode, the aluminum grid line and the silver electrode form silver-aluminum lap joint, solder paste is printed above the silver electrode, and the solder paste is printed above the silver electrode. The solder paste serves as a welding spot and is in lap joint with silver and aluminum to form an electric connection point, and the silver electrode reacts with the solder paste to generate an intermetallic compound; an isolation component is arranged between the silver electrode and the aluminum gate line, is positioned on the outer side of the solder paste, and is used for limiting the intermetallic compound from permeating towards the aluminum gate line; in the solder paste printing process, the isolation assembly is printed between the silver electrode and the aluminum grid line to the periphery of the solder paste to form the isolation layer to isolate the solder paste from permeating the surrounding silver paste, so that the solder paste can be effectively prevented from permeating towards the aluminum grid line, the safety of the silver-aluminum lap joint of the battery is improved, and the resistance at the lap joint is prevented from increasing and heating.

The robot simulation skin structure comprises a temperature control unit and an evaporation heat dissipation unit, the temperature control unit comprises a flexible base layer and a silver electrode layer, the silver electrode layer covers the flexible base layer, the flexible base layer is made of a flexible PTC material, the evaporation heat dissipation unit comprises a liquid storage layer and an opening and closing door, and the opening and closing door is made of a flexible PTC material. The opening and closing door covers the liquid storage layer, the opening and closing door is a shape memory alloy opening and closing door or a shape memory polymer opening and closing door, and heat dissipation liquid is arranged in the liquid storage layer. Therefore, according to the simulated skin structure, the temperature sensing function, the self-adaptive heating function and the evaporative heat dissipation function are integrated into a single flexible structure, the autonomous response of local heat management can be achieved without an external complex control system, and therefore an extra sensor, an extra controller and an extra complex circuit are omitted; independent work and quick response of each local area are realized, and the system structure is greatly simplified.

The invention discloses copper paste, an electrode and a preparation method and application of the electrode, the electrode comprises copper powder, the copper powder comprises nano-copper particles and flaky copper powder, the nano-copper particles comprise at least two connected copper nanoparticles, and the adjacent copper nanoparticles are connected in a surface contact mode. According to the electrode disclosed by the invention, the nano-copper particles formed by connecting more than two copper nano-particles are filled in the gap areas among the large-size flaky copper powder, so that the nano-copper particles are in direct contact with the flaky copper powder, conductive channels among the conductive particles are smoother, and the structure of the electrode is more compact due to the filling of the nano-copper particles; the bulk resistance of the electrode is greatly reduced and is equal to the conductivity of a silver electrode; the nano-copper particles can also be used as an auxiliary adhesive after being sintered and cured, so that the adhesive force between the copper grid line and the solar cell is improved, and the connection between the grid line and the solar cell is firmer.

The present invention is a treatment method for an alloy, the method being used for the purpose of obtaining a solution that contains nickel and / or cobalt from an alloy that contains nickel and / or cobalt and copper. This treatment method for an alloy comprises a leaching step in which the alloy is subjected to a leaching treatment by adding an acid solution to the alloy in the coexistence of a sulfurizing agent, thereby obtaining a leachate and a leaching residue; and in the leaching step, the leaching treatment is carried out while maintaining the copper concentration in the reaction solution within the range of 0.5 g / L to 15 g / L by adding a divalent copper ion source thereto. Moreover, in the leaching step, the leaching treatment is carried out while maintaining the redox potential of the reaction solution at 50 mV or more, using a silver / silver chloride electrode as a reference electrode.

The invention provides a waste photovoltaic panel pyrolysis nondestructive recovery system and method, and relates to the technical field of photovoltaic panel pyrolysis, the system comprises a pretreatment unit, a mechanical treatment unit and a chemical treatment unit, the pretreatment unit is used for dismounting an aluminum frame, a junction box and a back plate on a waste photovoltaic panel; the mechanical treatment unit comprises a low-temperature pyrolyzing furnace and a cutting machine which are connected with each other, the low-temperature pyrolyzing furnace is connected with the pretreatment unit and is used for softening an EVA adhesive film on the waste photovoltaic panel, and the cutting machine is used for cutting the softened EVA adhesive film so as to separate a glass sheet from a battery piece; the chemical treatment unit comprises an acid-base treatment module and an electrochemical recovery module which are connected, the acid-base treatment module is connected with the cutting machine and used for recovering aluminum back electrodes on the battery pieces, and the electrochemical recovery module is used for electrolyzing and recovering silver electrodes on the battery pieces to obtain silicon wafers. According to the invention, nondestructive recovery of the silicon wafer can be realized, the recovered silicon wafer can be directly reused for photovoltaic panel production, and the production cost of the photovoltaic panel is reduced.

The invention relates to an expanded gate type field effect transistor sensing array and a preparation method and application thereof.The expanded gate type field effect transistor sensing array comprises a silk-screen printing electrode array and a metal oxide semiconductor field effect transistor, the silk-screen printing electrode array comprises a silver electrode and a carbon electrode, and the metal oxide semiconductor field effect transistor comprises a gate, a source and a drain. The carbon electrode is used as a detection probe after being modified by a gold / metal organic framework composite nano material and a detection probe based on a double-recognition strategy, and the carbon electrode is connected with the grid electrode through a wire to obtain the expanded grid type field effect transistor sensing array. Compared with the prior art, the novel extended gate type field effect transistor sensor for rapidly and sensitively detecting antibiotics is simple in structure, low in cost, high in stability and reusable. The double-recognition strategy probe based on combination of the aptamer and the molecularly imprinted polymer is prepared, the detection sensitivity and selectivity are improved, the synthesis method is simple, and experiment conditions are mild.

The present invention relates to the field of photovoltaic cell manufacturing, specifically a process using a strippable blue glue as an electroplating seed layer, the present invention includes uniformly coating a 5-50 micron strippable blue glue on the surface of an HJT cell and curing it to form a seed layer, placing it in a copper electroplating solution, optimizing electroplating parameters according to cell characteristics to deposit copper ions to form grid lines, stripping the blue glue by physical or chemical methods after electroplating without residue and recyclable, and finally cleaning and drying the cell surface and performing electrical and reliability tests. This process has many advantages, compared with the traditional silver electrode process, the cost is reduced, the blue glue allows the copper grid line to be quickly formed to improve production efficiency, it is easy to strip to ensure cell performance, and the recyclability of the blue glue reflects environmental protection, and has good application prospects in the field of photovoltaic cell manufacturing.

The invention provides a method for testing the contact resistance of a solar cell film, which comprises the following steps of: preparing a plurality of multi-layer stacked test samples with different thicknesses, and alternately depositing an amorphous silicon film and a transparent conductive oxide film on a glass substrate of each sample to form a horizontal laminated structure; respectively arranging silver electrodes on the left side and the right side of each sample for performing voltage-current volt-ampere test, and recording the total resistance of each sample in a specified voltage range and the change condition of the total resistance along with the thickness of the film layer; electrode contact resistance is measured and deducted; reversely deducing the resistance value when the thickness of the film layer is 0 through an extrapolation method to obtain the contact resistance between the film layers; and calculating the contact resistance of a single interface according to the number of contact interfaces of the amorphous silicon film and the transparent conductive oxide film in the sample. The method is suitable for a test system under different manufacture procedures and thickness changes, and quantitative extraction of the contact resistance between the amorphous silicon and the TCO is achieved.

The invention discloses a method for preparing a solar cell by inhibiting perovskite iodine migration and modifying a thin film through a piperazine derivative, and belongs to the technical field of perovskite solar cells. According to the method, a piperazine derivative is used between a perovskite layer and an electron transport layer, so that the piperazine derivative has the functions of modifying a perovskite thin film and inhibiting iodine migration. A modified perovskite light absorption layer is obtained by spin-coating a piperazine derivative solution on the surface of perovskite. The piperazine derivative can act with the iodine simple substance generated after the perovskite material is degraded, and decomposes the iodine simple substance to generate iodide ions, so that further degradation of the perovskite film is prevented, contact between the iodine simple substance and a silver electrode is reduced, and the stability of perovskite is improved. Meanwhile, the material can effectively passivate lead site defects on the surface of the perovskite thin film, and non-radiative recombination generated at the defects is reduced. According to the method, perovskite degradation and silver electrode damage caused by iodine elementary substance volatilization can be effectively inhibited, and an efficient and stable perovskite solar cell device is finally obtained.

The invention belongs to the technical field of flexible sensors, and particularly relates to a temperature-pressure dual-mode decoupling flexible sensor based on a full resistance type response mechanism. The invention discloses a preparation method of a dual-mode decoupling flexible sensor capable of simultaneously detecting a temperature signal and a pressure signal, the sensor comprises a five-layer structure, the upper layer and the lower layer are PET packaging layers coated with silver electrodes, and the middle structure is formed by stacking a pressure sensor, a silver electrode and a temperature sensor in sequence from top to bottom. The temperature-sensitive material and the pressure-sensitive material in the dual-function sensor are both in a resistance response mechanism under stimulation, and signals are inevitably interfered. For the pressure sensor, the pressure sensor shows positive temperature coefficient response, and the response to the temperature is close to zero by adding a material with a negative temperature coefficient, so that the pressure sensor is insensitive to a temperature signal. For the temperature sensor, the pressure signal desensitization of the temperature sensor is realized through the preparation of an ultrathin temperature sensing film material and the design of a dual-function sensor stacking mode. By adjusting the sensor film to be sensitive to only one stimulus and negligible in response to the other stimulus, decoupling of temperature and pressure signals is achieved, the temperature and the pressure can be detected and distinguished at the same time, a resistance signal serves as a unique output signal, a complex signal processing and reading system is not needed, the preparation process is simple, and operability is high. And the manufactured sensor is high in sensitivity and is applied to the fields of wearable equipment, man-machine interaction, electronic skin, bionic robots and the like.

The invention discloses a gallium oxide-based Schottky barrier diode and a preparation method thereof. The method comprises the following steps: preparing a gallium oxide substrate; performing oxygen plasma treatment in a reactive ion etching system; feeding the sample into a tubular furnace, and annealing in an air atmosphere; then sending the annealed sample into electron beam evaporation equipment for back metal silver electrode growth; next, the sample is sent into rapid thermal annealing equipment to be annealed in the N2 atmosphere, and ohmic contact is formed; then, under the conditions that the growth speed is 0.01-0.1 nm / s and the vacuum degree is lower than 1 * 10 <-4 > Pa, field plate oxide Al2O3 grows on the surface treatment acting layer of the substrate through electron beam evaporation; and finally growing a metal anode at the top of the device by electron beam evaporation equipment. According to the technical scheme provided by the invention, the problem of preparing the gallium oxide-based Schottky barrier diode with low forward conduction loss under the condition of maintaining high breakdown voltage of the device is solved.

The invention relates to a piezoelectric-piezoresistive collaborative mechanism-based sensor array and a preparation method and application thereof. The sensor array comprises a flexible packaging substrate layer, a piezoelectric layer, a piezoelectric layer and a piezoelectric layer which are sequentially integrated from bottom to top, the bottom electrode layer is composed of a stretchable silver electrode array subjected to silk-screen printing and serves as a lower electrode of the piezoelectric sensor; the piezoelectric functional layer is composed of a lead zirconate titanate-glass fiber composite film, and the piezoelectric functional layer is subjected to corona polarization treatment; the piezoresistive sensing layer is formed by spraying a polyvinylpyrrolidone modified carbon material dispersion liquid, the piezoresistive sensing layer is used as an upper electrode of the piezoelectric sensor, the piezoresistive sensing layer is directly deposited on the surface of the piezoelectric functional layer, and the piezoresistive sensing layer and the piezoelectric functional layer pass through a common electrode; and packaging a protection layer on the top layer. Compared with the prior art, the method has the advantages of high sensitivity, wide linear range and multi-parameter synchronous detection capability, high-resolution real-time deformation identification can be realized, and key technical support is provided for high-precision sensing application such as profile inversion.

The invention discloses a nano-material piezoresistor and a preparation method thereof, and belongs to the technical field of piezoresistors, the preparation method of the nano-material piezoresistor comprises the following steps: S1, preparing raw materials for preparing the piezoresistor by mole percent: 94 to 96 percent of ZnO, 1.0 to 1.5 percent of Bi2O3, 0.5 to 1.5 percent of Co3O4, 0.3 to 0.8 percent of Mn2O3, 1.0 to 3.0 percent of Sb2O3 and 0.3 to 0.8 percent of NiO; s2, additives except ZnO are mixed, deionized water and a dispersing agent are added to prepare additive slurry, the additive slurry is dried and smashed after being sanded, and additive powder is obtained; s3, mixing ZnO with the additive powder, adding deionized water, a dispersing agent and a binder, and performing ball milling and refining in a ball mill to obtain total slurry; and S4, carrying out spray granulation, water-containing aging and dry-pressing molding on the total slurry, carrying out glue removal treatment on a green body subjected to dry-pressing molding, then carrying out high-temperature sintering, grinding and flattening, then carrying out heat treatment, coating silver electrodes on the upper and lower end surfaces, and coating insulating glaze on the side surfaces to obtain the piezoresistor. Wherein the dispersing agent improves the dispersity of the nano-powder, and the nano-powder has application prospects.

Disclosed herein is a porous substrate having silver and optionally silver oxide and a silver sulfide coating. Also disclosed herein is a battery having a cathode, an anode, and a separator between the cathode and the anode. The cathode includes a substrate having silver and optionally silver oxide and a silver sulfide coating. Also disclosed herein is a method of submerging a substrate having silver and optionally silver oxide in a solution of elemental sulfur in dimethyl sulfoxide to form silver sulfide on the surface of the substrate.

The invention discloses a crosslinking self-assembly hole blocking layer material containing siloxane and anchoring groups, and belongs to the field of perovskite solar cells. In the hole blocking layer material, the siloxane component triggers alcoholysis reaction in an isopropanol medium to form a silane precursor with hydroxyl; si-OH groups between adjacent molecules are subjected to a condensation reaction to form a Si-O-Si cross-linked network; meanwhile, a Si-OH group in the precursor and an ester group on the surface of a PCBM molecule are subjected to an ester exchange process, and Si-O-C covalent linkage is constructed to realize chemical anchoring of PCBM; and an anchoring functional group at the tail end of the material and the surface of a silver electrode form a strong coordination effect, so that thermally-driven silver atom migration is effectively inhibited, and performance degradation of the perovskite solar cell under a high-temperature working condition is remarkably relieved. The invention opens up a new way for improving the thermal stability of the perovskite solar cell, and effectively solves the problem of device stability caused by metal electrode ion diffusion.

The application discloses a silver-silicon contact resistance test screen plate for silicon-based photovoltaic slurry and a test method thereof. The test screen plate comprises a silicon wafer, and a cross line is marked in the middle of the front surface of the silicon wafer to divide the front surface into four printing areas with the same area. The four printing areas are divided into two groups with two opposite angles as a group. Two printing areas in the first group are arranged into two rows of vertical gate lines according to the opposite angles, and two printing areas in the second group are arranged into two rows of horizontal gate lines according to the opposite angles. Each row of vertical gate lines and horizontal gate lines comprises six gate lines with the same size, and the gate lines are parallel to each other. The application provides a screen plate design and a test method for contact resistance test, so that the performance of the material can be better evaluated, and the conversion efficiency of the battery piece is effectively improved. In addition, the screen plate and the test method can satisfy that two different silver electrodes are printed on the same silicon wafer, the difference in bulk resistance between different silicon wafers is effectively reduced, and the accuracy of the contact resistance test result is ensured.

The invention provides a method for recycling battery pieces from waste photovoltaic panels, and belongs to the technical field of solid waste resource utilization. According to the method, residual EVA decomposition and aluminum back electrode recycling are achieved through selective alkali liquor treatment, then silicon wafers are obtained through acid leaching recycling, the silver electrode is further recycled through electrolytic treatment, the treatment process is simplified, and the recycling cost is reduced; in addition, the recovery rate of aluminum and silver is high.

The utility model discloses an integrated solid-state nanopore biological detector, which relates to the technical field of biological detection and comprises a fluid pool shell, a solid-state nanopore silicon nitride chip and a PCB (printed circuit board), a sample injection hole is arranged on the fluid pool shell, the solid-state nanopore silicon nitride chip is arranged in the fluid pool shell, and the solid-state nanopore silicon nitride chip is arranged in the PCB. A silicon nitride window corresponding to the solid-state nanopore silicon nitride chip is formed in the fluid pool shell, a PCB (Printed Circuit Board) is fixed in the fluid pool shell, an RFID (Radio Frequency Identification Device) storage chip, a magnetic connector and silver electrodes are arranged on the PCB, and the silver electrodes are positioned on two sides of the silicon nitride window. According to the utility model, the RFID storage chip is arranged, so that the key information of the biological detector is stored and traced, and the problem of information management disorder in the prior art is solved; the RFID storage chip can store key information of the biological detector for a long time, and the integrity and traceability of the data are ensured.

The invention relates to the technical field of oxygen free radical detection, in particular to a manufacturing process of a portable and reliable oxygen free radical detector. Comprising the following steps: mixing superoxide dismutase, potassium ferricyanide, an isothiazolinone preservative, hexammine ruthenium chloride, polyethylene glycol octylphenol ether, trehalose and bovine serum albumin, and uniformly stirring to prepare an enzyme preparation; mixing an enzyme preparation with the high polymer material solution to form reagent layer slurry with viscosity; uniformly coating the reagent layer slurry on a substrate material, and drying; printing an electrode material on the substrate material to form a working electrode and a counter electrode; the silver electrode is placed in an electrolyte containing chloride ions, potential is applied, the silver surface is subjected to a chlorination reaction, and a silver / silver chloride electrode is formed; covering the reagent layer above the electrode, tightly combining the reagent layer with the electrode in a sticking or hot pressing manner, and cutting to obtain the test paper; the prepared portable oxygen free radical detector can be used for conveniently and efficiently detecting oxygen free radicals of a human body at low cost.

The present invention discloses a silver-nickel conductive paste for BC cells and its preparation method, belonging to the technical field of photovoltaic cells; by weight percentage, the raw material composition is: 39-69% of micron silver powder, 20-50% of modified nickel, 2-6% of glass powder, 0.1-10% of dispersant, 0-1% of silicone oil, and the balance is organic carrier; the modified nickel is elemental nickel powder subjected to modification treatment, and the modification treatment methods are surface organic modification and ball milling modification, or surface inorganic modification and ball milling modification. The present invention uses nickel powder to replace part of the silver powder, and the prepared conductive silver-nickel paste is used for BC cells, significantly reducing the cost, having high reliability, and the conversion efficiency is better than or equivalent to that of traditional all-silver electrode pastes.

The invention discloses a wafer capacitor adopting a carbon fiber pin and a production process and production equipment thereof. The wafer capacitor comprises a wafer capacitor body, a silver electrode and the carbon fiber pin. The production process comprises the steps of adsorbent preparation, carbon fiber wrapping with the adsorbent, pre-reduction reaction, insulation layer wrapping and wafer capacitor preparation. The production equipment comprises a lifting pool, a silver ion soaking pool, a phosphorous acid soaking pool, a hot extrusion mechanism, an extruder and a laser welding unit. According to the method, carbon fibers are wrapped with an adsorbent with high silver adsorption, a porous conductive carbon fiber structure with a nano-silver wire network is produced through pre-reduction of a reducing agent and a high-temperature reducing atmosphere reaction, and tin-free welding is carried out on a high-silver-content modified carbon fiber pin and silver on the surface of a wafer capacitor through laser welding; and the obtained product has the advantages of light weight, high strength, high conductivity, high welding strength, corrosion resistance, high temperature resistance and the like, so that the wafer capacitor adapts to a severe environment, and the application range is widened.

The utility model discloses a medical graphene constant-temperature box which comprises a box body, a box cover, a heating plate and a storage bin. By arranging the graphene heating coating and the grid-shaped silver electrode strips shaped like the Chinese character'tian ', the graphene heating coating can rapidly and uniformly perform overall heating and heating, and the generation speed and efficiency of heat are improved; the heat dissipation plate and the heat dissipation holes which are uniformly and densely arranged in the shape of the Chinese character'tian 'are arranged, so that generated heat can be quickly and uniformly diffused into the box body through micro holes in the heat dissipation plate, and the storage bin is further quickly and uniformly heated; the temperature control system is arranged, the temperature in each storage bin is monitored and controlled in real time, accurate control over different temperatures in different storage bins can be achieved, and different heat preservation temperatures are set according to using requirements so that different articles can be stored in a classified mode.