1145 results about "Silver electrode" patented technology

Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

The invention provides a lead-free silver conductive paste used for positive electrode of solar battery and a preparation technique thereof. The paste comprises the following materials by weight percentage: 65 to 85 percent of silver powder, 2 to 8 percent of lead-free glass powder, 10 to 25 percent of organic carrier and 0.1 to 3 percent of additive. The paste adopts the lead-free glass powder of Si-B-Bi-Al-Ti-Zn-O series to replace the traditional lead-bearing glass powder; and the series glass powder has lower softening point, can lead the silver electrode to have good adhesive force after sintering, and ensures the silver electrode to be well contacted with a silicon substrate. In addition, zinc resinate is used as the additive in the invention, not only can well improve the printing performance of the paste, but also can improve the electrical property of the electrode.

In a dielectric resonator, a superconductor is formed on two neighboring surfaces of a cubic dielectric body, and the superconductors formed on each two neighboring surfaces are connected by a silver electrode formed in the vicinity of the edge where the neighboring two surfaces join.

Silver electrode metallization in light emitting devices is subject to electrochemical migration in the presence of moisture and an electric field. Electrochemical migration of the silver metallization to the pn junction of the device results in an alternate shunt path across the junction, which degrades efficiency of the device. In accordance with a form of this invention, a migration barrier is provided for preventing migration of metal from at least one of the electrodes onto the surface of the semiconductor layer with which the electrode is in contact.

The invention relates to a producing method of a selective emitter double-faced PERC crystalline silicon solar cell. The producing method is characterized by comprising the first step of removing affected layers of a silicon chip and conducting texturization and cleansing on the silicon chip, the second step of conducting diffusion to form a pn junction and eliminating phosphorosilicate glass in positive side of the silicon chip and the pn junction in the reverse side of the silicon chip after the diffusion; the third step of conducting deposition of aluminum oxide/silicon nitride laminated passivated film on the reverse side of the silicon chip and conducting deposition of a silicon nitride antireflection film on the positive side of the silicon chip; the fourth step of using an optical maser to conduct routing on the reverse side of the silicon chip to obtain a routing slot; the fifth step of using a phosphorous source to coat the positive side of the silicon chip; the six step of conducting laser doping on the positive side of the silicon chip to obtain a main guard line and a subsidiary guard line doped with the laser; the seventh step of conducting photoinduction on electronickelling/copper/silver electrode, conducting connections between the reverse side of the cell with a cathode of an external power supply, conducting electroplating on the positive and reverse sides of the cell simultaneously, and conducting electroplating of three metals of nickel/copper/silver in sequence; the eighth step of conducting annealing on the electroplated cell. According to the producing method of the selective emitter double-faced PERC crystalline silicon solar cell, the problem that an aluminum grid line is hard to be aligned with a laser windowing grid when a silk screen is used to conduct reverse printing of the double-faced PERC cell is solved.

The invention discloses a perovskite solar cell. The perovskite solar cell is characterized by sequentially comprising a conductive glass layer, a compact titanium dioxide film, a porous titanium dioxide film, a methylamine lead iodine polycrystalline film, a hole-transport material layer and an evaporation silver electrode layer. Interface modification is carried out on the methylamine lead iodine polycrystalline film through long-chain alkyl silane coupling agents, and the number of carbon atoms of the long-chain alkyl silane coupling agents is larger than six and smaller than sixteen. The invention further discloses a manufacturing method of the perovskite solar cell. Compared with the prior art, the perovskite solar cell and the manufacturing method have the advantages that as interface modification is carried out through the long-chain alkyl silane coupling agents, the recombination of electrons in the cell can be suppressed, and the stability of the cell in the wet environment can be improved.

A resistance variable memory element and method for stabilizing the resistance variable memory element by providing a first and second electrode connected to a resistance variable material whereby the first and second electrodes comprise materials capable of providing a differential electrochemical potential across the resistance variable memory element which causes the resistance variable memory element to write to a predetermined “on” state. The resistance variable memory element is stabilized in a low resistance “on” state by the differential electrochemical potential. The first electrode preferably is a platinum electrode and the second electrode is preferably a silver electrode. The method and circuitry further includes a reverse refresh for stabilizing the resistance variable memory element in a high resistance state by applying a reverse voltage to the memory element.

An ultrasonic cleaning method and an ultrasonic cleaning device are provided, which are capable of performing simultaneously cleaning and sterilization of medical appliances or the like, and which can also be used for washing hands for disinfection without any special waste water treatment. The ultrasonic cleaning method for cleaning an object to be cleaned by using an ultrasonic wave includes the steps of putting cleaning fluid and the object to be cleaned in a cleaning tank (16), and applying ultrasonic vibrations to the cleaning fluid from an ultrasonic vibration member disposed in the cleaning tank (16) while ejecting air containing ozone into the cleaning fluid. The vibration portion has a communicating conduit 40 that opens at the surface thereof, and air containing ozone is discharged into the cleaning fluid from the communicating conduit. A silver electrode is disposed in the cleaning fluid, and electrolytic sterilization by silver ions is performed for the object to be cleaned adding to sterilization by ozone.

The invention discloses silver paste for the back face of a lead-free crystal silicon solar cell. The paste is characterized by being prepared from the following components in percentage by weight: 55-84 percent of silver powder, 15-38 percent of modified organic bonding agent and 1-10 percent of inorganic bonding agent. The invention further discloses a preparation method of the silver paste forthe back face of the lead-free crystal silicon solar cell. The silver paste has the advantages of excluding of toxic substances such as lead and the like, small damage to human bodies and realizationof high adhesion between a silver electrode and a silicon substrate.

The invention discloses a flexible semi-clarity strain sensor and a preparation method thereof. The sensor is characterized in that: a functional layer is provided on a flexible polymer substrate, the functional layer is a latticed structure which is formed by ZnO and nanofiber, and two sides of the functional layer are titanium and silver electrodes. The invention provides a method for preparinga super-high strain resistance semi-clarity stretching type mechanics sensor based on a zinc oxide nano wire/polystyrene nanofiber hybrid structure on a polydimethylsiloxane substrate. Transmissivities of the sensor before and after zinc oxide growth are represented. The sensor can detect force as high as 50% and has high endurance, rapid response and high sensitivity. A device can be applied to a human body rapid motion test simultaneously. In addition, through driving of a solar energy cell, the device becomes potential application of an outdoor self driven sensor system. The method in the invention has the characteristics of simplicity and a low price, and the sensor has the characteristics of semi-clarity, high strain resistance, high sensitivity, rapid response and the like.

A reversible electrochemical system includes a first electrode comprising liquid silver metal and a second electrode, said first and second electrodes separated by a oxygen ion-conducting solid electrolyte; a conduit for directing a first reactive material across the second electrode; and a conduit for contacting second reactive material with the first liquid silver electrode, wherein the cell is capable of steam electrolysis when the polarity of the electrodes is selected such that the liquid silver is an anode and the cell is capable of electrical energy generation when the polarity of the electrodes is selected such that the liquid silver is a cathode.

The invention relates to silver conductive paste for a front electrode of a crystalline silicon solar cell. The silver conductive paste comprises the following components in parts by mass: 75-98 parts of silver powder, 1-15 parts of glass powder, 5-60 parts of an organic carrier, 0-10 parts of an additive and 0.1-10 parts of a lead mixture, wherein, the silver powder contains silver particles andsilver particles which are provided with a core-shell structure and the surfaces of which are coated with silicon alloy powder; the glass powder is a glass metal aggregate formed by microwave-meltingand drying and co-grinding an oxide and one or more of Pt, Co, Pd, Sn, Bi, Se and Mo metal powder; and the lead mixture contains the components such as PbO particles and PbS compound particles with acore (PbS)-shell structure. The silver conductive paste has the advantages of good thixotropic property and good printing performance; and the silver electrode layer formed by the silver conductive paste has the advantages of good compactness, small series resistance and good ohmic contact property.

The invention discloses a high-conductivity lead-free silver paste used for a crystalline silicon solar cell and a preparation method thereof. The high-conductivity lead-free silver paste is prepared by compounding nano silver powder and micro silver powder, wherein a silver electrode formed by performing optimized grading and sintering on the micro silver powder has extremely high conductivity. The nano-modified high-conductivity lead-free silver paste comprises the following components in percentage by weight: 8 to 9 percent of micro silver powder with the grain diameter of 2 to 4.5 mu m, 56 to 62 percent of micro silver powder with the grain diameter of 5 to 10 mu m, 5 to 10 percent of nano silver powder, 3 to 5 percent of glass cement, 3 to 5 percent of inorganic additive, and 15 to 20 percent of organic carrier, wherein the grain diameter of the nano silver powder is 20 to 70 nm; the glass cement is a bismuth-silicon-boracium mixed glass system; and the organic carrier consists of an organic solvent and an organic additive. The high-conductivity lead-free silver paste has a simple preparation process, is simple and easy to produce in large scale, and has practical significance of improving the photoelectric conversion efficiency of the crystalline silicon solar cell.

This invention discloses a kind of slurry of copper electrodes and a manufacturing method, in which, the weight percentage of the slurry includes: Ball copper: 25-64%, sheet copper: 10-40%, glass powder: 2-8%, macromolecular resin: 0.5-6% and solvent: 16-26%, in which, the slurry does not contain harmful materials of Pb, Cd and hexavalent Cr and meets the needs of environment protection, first of all, organic carrier is prepared and then the glass powder is put into the carrier to be mixed and form precursor dispersed mixture, then the balls and sheets are put into the mixture to form copper electrode slurry used in piezoelectric resistors, the sintered copper electrode is good in weld, the anti-welding performance is better than silver electrode and has better adherence than porcelain.

The invention discloses sliver electrode slurry for a back electric field of a silicon solar cell and a preparation method thereof, and the silver electrode slurry for the back electric field of the silicon solar cell comprises the following components by weight percent: 60-70% of spherical silver powder, 0-5% of flaky silver powder, 2-6% of glass powder with a high-temperature softening point, 1-3% of glass powder with a low-temperature softening point and 20-30% of organic bonding agent. The particle size of the spherical silver powder is 0.5-2.5 mu m, and the tap density is above 4.5g/ml; the particle size of the flaky silver powder is below 5 mu m, and the tap density is above 4.0g/ml; and the glass powder with the high-temperature softening point is a PbO3-B2O3-SiO2-ZnO glass system, and the glass powder with the low-temperature softening point is a Bi2O3-B2O3-SiO2 glass system. The slurry is applied to a sliver electrode of the back electric field of the silicon solar cell; furthermore, after fast high-temperature sintering by a chained belt furnace, the adhesive capability is strong, the soldering resistance is good and the photoelectric conversion efficiency of a product is high.

The invention discloses low-temperature sintering silver electrode slurry, comprising the following ingredients by weight percentage: 65-75wt percent of nanometer silver powder, 0-5wt percent of strip silver powder, 2-10wt percent of glass powder, 0.2-1.8wt percent of inorganic additives and 20-30wt percent of organic carriers. The glass powder is a ZnO-B2O3-SiO2-Bi2O3 glass system, comprising the following ingredients by weight percentage: 2-15wt percent of ZnO, 1-15wt percent of B2O3, 2-10wt percent of SIO2, 60-90wt percent of Bi1O3, 0-6wt percent of Al2O3, 0-2wt percent of SrO and 0-5wt percent of BaO. The silver electrode slurry is suitable for sensitive resistance electrode and has good dispersity, small size distribution and high inoxidizability.

The invention discloses silicon solar cell front face electrode silver paste. The silicon solar cell front face electrode silver paste comprises, by mass, 75-80 percent of silver powder, 3-10 percent of lead-free glass powder, 10-15 percent of organic vehicle and 0.5-3 percent of additive. The silver powder is the spherical micro silver powder with nano bismuth serving as the core, the silver content is 99.1-99.7 percent, the bismuth content is 0.3-0.9 percent, the particle size is 1-2 microns, the tap density is 4.5-5.0 g/ml, the specific surface area is 0.4-1.0 m<2>/g, and the silver powder is prepared by conducting liquid-phase chemical reduction on bismuth nitrate and silver nitrate through glyoxal or acetaldehyde. Bismuth-silicon-antimony-molybdenum lead-free glass powder serves as an adhesive, and potassium fluotitanate, potassium fluoroaluminate, magnesium fluoride and the like are added to serve as the silicon nitride antireflective film eroding additive. According to the silicon solar cell front face electrode silver paste, the contact resistance between a silver electrode and a silicon wafer can be reduced, the stripping strength of the electrode is improved, the electrical property of a solar cell is improved, the production cost of the conductive silver paste is reduced, and the requirement for nonexistence of lead and environmental friendliness are met.

The invention relates to a method for forming a crystalline silicon solar cell front electrode, which comprises the steps that after the double-sided texturing monocrystalline silicon backside printing aluminum subjected to texturing, diffusing, surface passivating and front antireflection coating forming is dried by field and back silver electrodes, a thin grid silver electrode is firstly printed at the front side of a silicon wafer and dried; then, only the main grid electrode is printed, or the main grid electrode is printed and a thin grid electrode is printed for the second time, and are dried; and the dried main grid electrode and the thin grid electrode are fed into a tunnel furnace for sintering, so the crystalline silicon solar cell front electrode is obtained. Because the secondary printing technology is adopted, the method has the advantages of the secondary printing technology, and is suitable for industrial production; and under the condition of ensuring the enough good ohmic contact of the thin grid electrode, the main grid electrode is prevented from being directly contacted with the silicon wafer, the surface passivation area is increased, the interfacial compound of the photon-generated carrier is reduced, and the photoelectric conversion efficiency of a solar cell is improved.

The invention discloses a low-temperature sintered microwave medium ceramic material and a preparation method thereof. The material comprises the raw materials with the mol ratio: BaCO3:ZnO:TiO2:Q=1:x:(4+y):z, wherein x=0.01-0.5, y=0.01-0.5, z=0.01-0.1, and Q is glass combustion-supporting agent or BaCu (B2O5); the glass combustion-supporting agent comprises the raw materials with the mol ratio being Li2O:ZnO:B2O3=1:2:7 or Li2O: B2O3-1:2:7=3:2:5. The material can be obtained through traditional solid phase reaction synthesis. The material has lower sintering temperature (is capable of being fired at the temperature below 900 DEG C to form ceramics), is capable of being fired at the temperature of 900 DEG C to form ceramics and has better microwave dielectric property, wherein Epsilon r is equal to 25-35, Q*F is larger than 12,000, and Pi f is equal to -10ppm/DEG C to +30ppm/DEG C; in addition, the material has stable process and good repeatability and can be better co-fired and matched with a silver electrode. The low-temperature sintered microwave medium ceramic material can be used for manufacturing microwave devices, such as lower temperature co-fired ceramic (LLCC) systems, multilayer medium resonators, microwave antennae, wave filters, and the like.

The invention provides a conductive paste and a preparation method thereof. The conductive paste comprises aluminum powder, an inorganic binding agent, an organic carrier and metal-glass composite powder, wherein the metal-glass composite powder is of nano-particles and a core-shell structure, glass is used as a core material, and metal is used as a shell material. The conductive paste disclosed by the invention is good in storage stability and less prone to sedimentation and agglomeration, and the conductive paste is less prone to leakage from a screen during screen printing; after sintering, an aluminum film is smooth in surface and grey white, and has no aluminum vesicles or aluminum beads; and furthermore, the part in contact and superimposition with a back silver electrode, of the aluminum film is wiped by a non-dust cloth, and wiping traces and powder dropping can be avoided. The series resistance of the produced solar cell is reduced obviously, a filling factor is increased obviously, and the average photoelectric conversion efficiency of a monocrystalline silicon cell piece can be above 18.20%. Simultaneously, the conductive paste disclosed by the invention is good in construction performance, a film layer formed after sintering is compact, the sintering thickness is uniform, the bending of a silicon chip is small, the sheet resistance is small and the open circuit voltage (Voc) of the formed cell is high.

The invention provides silver powder for printing size for solar cell electrodes and a preparation process thereof. The silver powder is composed of spherical, dendritic and random shaped silver powder bodies, the tap density is 3.96-5.21g/mL, the mean particle size is 0.6-3.5 microns, and the apparent density is 2.35-2.72g/mL. The preparation process includes preparing a silver nitrate solution and a reducing agent solution; respectively adding in a dispersing agent for dispersion; adding a silver precursor solution dropwise into a reducing mixed solution for reaction and standing; separating out liquid and solids; washing the solids with deionized water and ethanol respectively; and soaking in a protective agent and drying to obtain the silver powder for the printing size for the solar cell electrodes. The silver powder prepared through the process has a good crystallization surface and high dispersibility, a single particle size is large, the silver powder in various particle forms is mixed and can achieve high photoelectric converting efficiency when used on conductive fillers of conductive paste required by forming of front silver electrodes of crystalline silicon solar cells, and better filling and electric properties are provided compared with commonly used silver powder.

The invention discloses high specific surface area silver powder improving conductivity of a solar battery electrode and a preparation method. The silver powder has an average particle size of 0.6-0.75 micrometers, an apparent density of 2.5-5.0g/mL, a tap density of 4.15-6.95g/mL and specific surface area of 0.45-0.75m<2>/g. The method comprises the steps of preparing a silver nitrate solution and a reducer solution, adding a dispersing agent, performing parallel flow addition of various reaction system solutions into a reaction vessel by twice in a twice addition manner, uniformly mixing the reaction system solutions for the first time, keeping a PH value and temperature of reaction liquid as 2-5 and 25-60 DEG C, continuing stirring for 10-30min after feeding, and adding a mixed reaction solution in a parallel flow addition manner with the addition volume of 0.25-0.75 time of the total addition volume of the first time. The silver powder is a spheroid covered with bulges on the surface, is uniform in particle size and has a good crystal surface and high dispersity; the photoelectric conversion efficiency can be improved when the silver powder is used as front silver electrode slurry of crystalline silicon solar battery; the silver powder particularly has excellent characteristics in aspects of short-circuit current, contact resistance, fill factor and the like.

The invention discloses a selective electrolysis hydrogenation and dechlorination method for a chlorinated organic matter. The method comprises the following steps of: dissolving the chlorinated organic matter in alkaline solution serving as a reaction medium, and performing an electrolytic reaction; and acidizing after the electrolytic reaction is finished to obtain a target product, wherein a ruthenium titanium positive electrode is used as the positive electrode of the electrolytic reaction, a silver electrode is used as the negative electrode of the electrolytic reaction, and energizationis stopped for 5 to 60 minutes when electrolysis is performed for 1 to 5 hours every time in the electrolysis reaction process. The method is easy to operate; and by the method, the step of repeatedly performing electrochemical oxidation on the activated silver electrode in the reaction process can be prevented, and the energy consumption of the reaction can be effectively reduced.