Producing method of selective emitter double-faced PERC crystalline silicon solar cell

Abstract

The invention relates to a producing method of a selective emitter double-faced PERC crystalline silicon solar cell. The producing method is characterized by comprising the first step of removing affected layers of a silicon chip and conducting texturization and cleansing on the silicon chip, the second step of conducting diffusion to form a pn junction and eliminating phosphorosilicate glass in positive side of the silicon chip and the pn junction in the reverse side of the silicon chip after the diffusion; the third step of conducting deposition of aluminum oxide / silicon nitride laminated passivated film on the reverse side of the silicon chip and conducting deposition of a silicon nitride antireflection film on the positive side of the silicon chip; the fourth step of using an optical maser to conduct routing on the reverse side of the silicon chip to obtain a routing slot; the fifth step of using a phosphorous source to coat the positive side of the silicon chip; the six step of conducting laser doping on the positive side of the silicon chip to obtain a main guard line and a subsidiary guard line doped with the laser; the seventh step of conducting photoinduction on electronickelling / copper / silver electrode, conducting connections between the reverse side of the cell with a cathode of an external power supply, conducting electroplating on the positive and reverse sides of the cell simultaneously, and conducting electroplating of three metals of nickel / copper / silver in sequence; the eighth step of conducting annealing on the electroplated cell. According to the producing method of the selective emitter double-faced PERC crystalline silicon solar cell, the problem that an aluminum grid line is hard to be aligned with a laser windowing grid when a silk screen is used to conduct reverse printing of the double-faced PERC cell is solved.

Description

technical field [0001] The invention relates to a method for manufacturing a selective emitter double-sided PERC crystalline silicon solar cell, belonging to the technical field of crystalline silicon solar cell manufacturing. Background technique [0002] Improving conversion efficiency and reducing manufacturing costs have always been the two main lines of development of the photovoltaic industry. Among many photovoltaic cell technology routes, crystalline silicon cell technology has always occupied the largest market share, so improving the conversion efficiency of industrialized crystalline silicon cells has become a broad appeal of the industry. At today's silicon wafer thicknesses, reducing the recombination rate at the back surface can significantly improve efficiency. For single crystals with longer diffusion lengths, the improved efficiency is even more pronounced. On P-type monocrystalline silicon, PERC (passivated emitter and rear cell, passivated emitter back s...

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Problems solved by technology

[0005] The purpose of the present invention is to overcome the deficiencies in the prior art, to provide a method for making a selective emitter double-sided PERC crystalline silicon solar cell, which solves the problem of printing aluminum grid lines on the back of the screen-printed double-sided PERC cell and laser window opening Difficult Alignment of Grid Lines

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