Producing method of selective emitter double-faced PERC crystalline silicon solar cell

A technology of solar cells and manufacturing methods, applied in photovoltaic power generation, circuits, electrical components, etc., can solve problems such as difficult alignment of aluminum grid lines and laser window grid lines, so as to avoid battery sheet bending, high conversion efficiency, and solve Difficult to align effect

Active Publication Date: 2017-02-22
WUXI SUNTECH POWER CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to overcome the deficiencies in the prior art, to provide a method for making a selective emitter double-sided PERC crystalline silicon s

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  • Producing method of selective emitter double-faced PERC crystalline silicon solar cell

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Embodiment 1

[0033] Embodiment 1: A method for manufacturing a selective emitter double-sided PERC crystalline silicon solar cell, comprising the following steps:

[0034] (1) Texturing: Select a 156mm×156mm P-type diamond wire-cut single crystal silicon wafer as the base material, with a resistivity of 3Ω cm, put in a mixture of potassium hydroxide concentration of 3% and additive concentration of 1.5% and heat to 80°C In the solution, the corrosion reaction is 18 minutes, the thinning amount of the texture is 0.58g, and the pyramid size of the texture is about 2.5μm; after the texture, the silicon wafer after the texture is cleaned with a mixed acid solution of HF / HCl at room temperature, and the concentration of the HF volume percentage is 4%. The HCl volume percentage concentration is 4%, and the surface reflectance of the silicon wafer after texturing is 10.8%;

[0035] (2) Diffusion: Using the method of phosphorus diffusion in a tube furnace, in the diffusion furnace at a temperature...

Embodiment 2

[0044] Embodiment 2: A method for manufacturing a selective emitter double-sided PERC crystalline silicon solar cell, comprising the following steps:

[0045] (1) Texturing: Select a 156mm×156mm P-type diamond wire-cut single crystal silicon wafer as the base material, with a resistivity of 2Ω cm, put in a mixed solution with a concentration of potassium hydroxide of 3% and an additive concentration of 1.5% and heat to 80°C During the corrosion reaction for 18 minutes, the thinning amount of the texture is 0.67g, and the pyramid size of the texture is about 2.5μm; after the texture, the silicon wafer after the texture is cleaned with a mixed acid solution of HF / HCl at room temperature, and the volume percentage concentration of HF is 4%, HCl The volume percentage concentration is 4%, and the surface reflectance of the silicon wafer after texturing is 10.5%;

[0046] (2) Diffusion: Using the method of phosphorus diffusion in a tube furnace, in the diffusion furnace at a tempera...

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Abstract

The invention relates to a producing method of a selective emitter double-faced PERC crystalline silicon solar cell. The producing method is characterized by comprising the first step of removing affected layers of a silicon chip and conducting texturization and cleansing on the silicon chip, the second step of conducting diffusion to form a pn junction and eliminating phosphorosilicate glass in positive side of the silicon chip and the pn junction in the reverse side of the silicon chip after the diffusion; the third step of conducting deposition of aluminum oxide/silicon nitride laminated passivated film on the reverse side of the silicon chip and conducting deposition of a silicon nitride antireflection film on the positive side of the silicon chip; the fourth step of using an optical maser to conduct routing on the reverse side of the silicon chip to obtain a routing slot; the fifth step of using a phosphorous source to coat the positive side of the silicon chip; the six step of conducting laser doping on the positive side of the silicon chip to obtain a main guard line and a subsidiary guard line doped with the laser; the seventh step of conducting photoinduction on electronickelling/copper/silver electrode, conducting connections between the reverse side of the cell with a cathode of an external power supply, conducting electroplating on the positive and reverse sides of the cell simultaneously, and conducting electroplating of three metals of nickel/copper/silver in sequence; the eighth step of conducting annealing on the electroplated cell. According to the producing method of the selective emitter double-faced PERC crystalline silicon solar cell, the problem that an aluminum grid line is hard to be aligned with a laser windowing grid when a silk screen is used to conduct reverse printing of the double-faced PERC cell is solved.

Description

technical field [0001] The invention relates to a method for manufacturing a selective emitter double-sided PERC crystalline silicon solar cell, belonging to the technical field of crystalline silicon solar cell manufacturing. Background technique [0002] Improving conversion efficiency and reducing manufacturing costs have always been the two main lines of development of the photovoltaic industry. Among many photovoltaic cell technology routes, crystalline silicon cell technology has always occupied the largest market share, so improving the conversion efficiency of industrialized crystalline silicon cells has become a broad appeal of the industry. At today's silicon wafer thicknesses, reducing the recombination rate at the back surface can significantly improve efficiency. For single crystals with longer diffusion lengths, the improved efficiency is even more pronounced. On P-type monocrystalline silicon, PERC (passivated emitter and rear cell, passivated emitter back s...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0224
CPCH01L31/022441H01L31/1804Y02E10/547Y02P70/50
Inventor 陈丽萍周杰严婷婷汪涛陆红艳陈如龙
Owner WUXI SUNTECH POWER CO LTD
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