3146 results about "Doping" patented technology

The present disclosure relates to the technical field of back contact solar cells, and in particular relates to a combined passivation back contact solar cell having front wide band gap doping, and a preparation method therefor. The solar cell comprises a silicon wafer, and a first semiconductor layer, a second semiconductor layer and a third semiconductor layer arranged on the front face of the silicon wafer. The third semiconductor layer comprises a second tunneling oxide layer and a third doped polycrystalline silicon layer, provided in sequence from inside to outside. The third doped polycrystalline silicon layer is a doped polycrystalline silicon layer containing a first doping element and a second doping element, the first doping element being phosphorus, and the second doping element comprising any one of carbon and oxygen. Furthermore, the band gap width of the third doped polycrystalline silicon layer is ≥1.6eV. The present disclosure, while ensuring a passivation effect, can greatly decrease device investment costs, greatly reduce parasitic absorption of a third semiconductor layer on the front surface of a cell, and increase short-circuit current of the cell, thereby increasing cell conversion efficiency.

The invention discloses a back contact cell and a photovoltaic module, relates to the technical field of photovoltaic, and aims to perform field passivation on a first region and an overlapping region through a doping layer, and the doping layer can form a favorable electric field consistent with the induction direction of a first doped silicon layer so as to improve the collection efficiency of the first doped silicon layer on current carriers. The back contact cell includes a semiconductor substrate, a tunneling passivation layer, a first doped silicon layer, an intrinsic silicon layer, a second doped silicon layer, and a doped layer. The tunneling passivation layer and the first doped silicon layer are sequentially arranged on the first region and the overlapping region in a stacked mode. The intrinsic silicon layer and the second doped silicon layer are sequentially arranged on the second area in a stacked mode and further extend to cover the tunneling passivation layer and the first doped silicon layer which are located in the overlapping area. The doped layer is disposed within the first region and the overlapping region of the semiconductor substrate. And the doping concentration of a first doping element with the same conduction type as that of the first doping silicon layer in the doping layer is greater than that of the first doping element in the second region of the semiconductor substrate.

The invention relates to a back contact solar cell and a preparation method thereof, and a photovoltaic module, the back contact solar cell comprises a substrate, a first surface of the substrate is provided with P-type doped layers and N-type doped layers which are alternately arranged along a first direction, tunneling layers are arranged between the P-type doped layers and the substrate, and tunneling layers are arranged between the N-type doped layers and the substrate. The first fine grid is arranged on the N-type doped layer, and the second fine grid is arranged on the P-type doped layer. A first barrier layer is arranged in the N-type doping layer, the area of the first barrier layer is smaller than that of the N-type doping layer, the projection of the first fine grid falls into the projection of the first barrier layer in the thickness direction of the substrate, and the first barrier layer is used for preventing doping elements in the N-type doping layer and metal crystal grains in the first fine grid from diffusing towards the substrate. And the possibility that the tunneling layer and the substrate are damaged by doping elements and metal crystal grains is reduced. The first barrier layer and the tunneling layer can simultaneously realize selective transportation of carriers, and the efficiency of the back contact solar cell is improved.

The invention discloses a back contact battery, a photovoltaic module and a manufacturing method of the back contact battery, relates to the technical field of back contact batteries, and aims to solve the problems of relatively large defect hidden danger and relatively high electric leakage risk between an N-type doping layer and a P-type doping layer. According to the back contact battery, a first surface of a semiconductor substrate comprises a first area, a second area and a third area located between the first area and the second area. The first doped semiconductor layer is arranged in the first region, and the second doped semiconductor layer opposite to the first doped semiconductor layer in conductive type is arranged in the second region. The resistivity of the surface layer of at least part of the surface of the semiconductor substrate in the third region is greater than 20ohm. Cm; h1 + H2 + W is greater than or equal to 4 [mu] m and less than or equal to 300 [mu] m; h1 is the height difference between the bottom surface of the third region and the surface of the first region, H2 is the height difference between the bottom surface of the third region and the surface of the second region, and W is the width of the third region.

The invention discloses a preparation method of a composite high-entropy hard carbon negative electrode material and a sodium ion battery, and relates to the technical field of electrochemical energy storage materials. Existing doping limit is broken through through'high entropy design ', atomic-scale mixing of five elements and more than five elements is realized, strong structural stability which cannot be realized by traditional binary / ternary doping is achieved, 'molecular anchoring' and'entropy locking 'are completed by combining a pre-assembly technology with stepped carbonization, the problem of pain point of multi-element segregation is solved, and the method is suitable for large-scale industrial production. Sodium storage dynamic and thermodynamic properties of a high-entropy hard carbon precursor and an intermediate are synchronously improved through elaborate combination design of multiple elements and subsequent carbonization process parameter optimization, 'defect-interlayer spacing-pore structure 'triple regulation is realized, and the defect degree of high-entropy hard carbon is reduced through design of a coating process; the prepared composite high-entropy hard carbon negative electrode material shows excellent comprehensive performance in a sodium-ion battery, and especially has obvious advantages in high initial coulombic efficiency, high rate capability and long stability.

The embodiment of the invention relates to the photovoltaic field, and provides a back contact battery and a manufacturing method thereof, and a photovoltaic module, the back contact battery comprises a substrate, the substrate is provided with a first surface and a second surface which are opposite to each other along a first direction, and the second surface is provided with first regions and second regions which are alternately arranged along a second direction; the first dielectric layer and the first doping layer are stacked on the first region, and P-type doping elements are arranged in the first doping layer; the second dielectric layer and the second doping layer are stacked on the second region, and the second doping layer is provided with N-type doping elements; wherein the first doped layer comprises N layers of stacked first doped films, the crystallization rate of the (N-1) th layer of first doped film is higher than the crystallization rate of the Nth layer of first doped film in the direction away from the substrate, and N is a positive integer greater than or equal to 2. The embodiment of the invention is at least beneficial to improving the photoelectric conversion efficiency of the back contact battery.

The invention discloses a preparation method of a solar cell and the solar cell, and belongs to the photovoltaic field. The preparation method of the solar cell comprises the following steps: forming an alkali-resistant film layer on the front surface of a silicon substrate; forming a first tunneling layer and a first doping layer on the back surface of the silicon substrate; removing the first doping layer, the first tunneling layer and a part of the silicon substrate outside the first region; forming a second tunneling layer and a second doping layer on the back surface, wherein the doping types of the second doping layer and the first doping layer are opposite; removing the second doping layer, the second tunneling layer and a part of the silicon substrate outside the second region; removing the mask layer; and forming a first electrode in contact with the first doped layer in the first region, and forming a second electrode in contact with the second doped layer in the second region. According to the invention, the mask layer protects the front surface in the subsequent polishing process and the like, so that a thinner original silicon wafer can be selected, the two doping layers can be accurately divided and isolated on the back surface, and the purposes of reducing the cost, improving the process yield and improving the cell performance are achieved.

The embodiment of the invention relates to the photovoltaic field, and provides a photovoltaic cell and a manufacturing method thereof, and the manufacturing method comprises the steps: providing a substrate with a first surface and a second surface which are opposite to each other; at least performing doping treatment on the first surface to form a doped layer with a first doped element; performing first laser processing on a part of the doping layer to form an activation part, wherein the residual doping layer is a doping part; performing first etching treatment on the first surface by taking the residual doped layer as a dead layer so as to remove the activated part and form a first suede surface; forming a doped polycrystalline silicon layer with a second doping element and a silica glass layer at least on one side, far away from the doping part, of the substrate; performing second laser treatment on at least part of the silica glass layer to form a loose part; taking the residual silica glass layer as a protective layer, at least carrying out second etching treatment on the second surface to remove the loose part and the doped polycrystalline silicon layer opposite to the loose part, and forming a second textured surface; the laser types adopted by the first laser treatment and the second laser treatment are different, so that the manufacturing process is at least simplified.

The invention relates to the technical field of solar cells, in particular to a silicon-based heterojunction solar cell and a preparation method thereof. The embodiment of the invention provides a silicon-based heterojunction solar cell which comprises a silicon substrate, a first passivation layer, an N-type doping layer and a first transparent electrode which are sequentially arranged in the first direction, and the first direction is the direction, pointing to the first transparent electrode from the silicon substrate, in the thickness direction of the silicon substrate; the first passivation layer comprises a plurality of sub-layers which are sequentially arranged along the first direction: an intrinsic oxygen-doped amorphous silicon layer and an N-surface intrinsic amorphous silicon layer; and along the first direction, the refractive index of the intrinsic oxygen-doped amorphous silicon layer is gradually increased. According to the embodiment of the invention, passivation can be ensured, the conductivity can be improved, and the open-circuit voltage and the fill factor can be effectively improved.

The invention relates to the technical field of solar cells, and particularly discloses a back contact solar cell, a cell module and a photovoltaic system, and the cell comprises a silicon substrate which is provided with a light receiving surface and a backlight surface which are opposite to each other; a doping layer and an electrode layer are sequentially arranged on the backlight face in the direction away from the light receiving face, the doping layer comprises N-type doping layers and P-type doping layers which are alternately arranged at intervals, the electrode layer comprises N-type electrodes and P-type electrodes, the electrical conductivity of the silicon substrate, the electrical conductivity of the P-type doping layers and the electrical conductivity of the N-type doping layers are sequentially increased, and the electrical conductivity of the P-type doping layers and the electrical conductivity of the N-type doping layers are sequentially increased. When the silicon substrate is a P-type silicon substrate, the total length of all the N-type electrodes is greater than the total length of all the P-type electrodes; when the silicon substrate is an N-type silicon substrate, the total length of all the P-type electrodes is larger than the total length of all the N-type electrodes. Separation of photo-generated electron hole pairs and collection of current can be enhanced, series resistance can be effectively reduced, power loss in the cell is reduced, filling factors are improved, meanwhile, the effective power generation area of the silicon substrate is increased, more photo-generated carriers are generated, short-circuit current is improved, and the conversion efficiency of the cell is effectively improved.

The invention relates to the technical field of coatings, and discloses a modified hexagonal boron nitride and organic silicon double-component doped high-flame-retardant epoxy resin powder coating as well as a preparation method and application thereof. Comprising the following raw materials in parts by weight: 25-50 parts of modified hexagonal boron nitride, 90-110 parts of organic silicon resin, 120-150 parts of epoxy resin, 5-8 parts of dicyandiamide, 100-120 parts of silica powder, 8-12 parts of other auxiliaries and 80-100 parts of filler. The flame-retardant epoxy resin powder coating is prepared by uniformly mixing the components, melting, extruding a sheet material, grinding and sieving. The flame-retardant and fireproof performance of the epoxy resin powder coating is greatly improved in a modified hexagonal boron nitride and organic silicon double-component doping mode.

The invention belongs to the field of battery materials, and discloses a high-entropy high-nickel positive electrode material which comprises a base material LiNixCoyMzO2, a base further comprises a lithium-site doping element and a nickel-site doping element, the surface of the base is coated with an island-shaped coating layer, and the island-shaped coating layer is a nano metal oxide layer. The preparation method comprises the following steps: uniformly mixing a high-nickel hydroxide precursor, a lithium source, a compound containing an element A and a compound containing an element B, carrying out two-stage sintering, mixing with a metal oxide containing an element C and a metal oxide containing an element D, and sintering to obtain the high-entropy high-nickel positive electrode material. Lithium doping in a bulk phase of the high-entropy high-nickel positive electrode material can improve the electronic conductivity of a single crystal material, increase the interlayer spacing of transition metal and inhibit lithium and nickel positive ions from being mixed, and nickel doping can improve the structural stability and thermal stability of the material, inhibit irreversible phase change of H2-H3 and stabilize lattice oxygen of the material; the doping modification of the two sites further improves the performance of the material.

The invention relates to a magnetron sputtering system and a coating method thereof, the system comprises a pair of twin silicon target material and aluminum target material which are arranged in a coating chamber, the aluminum target material is located in the middle of a horizontal line where the twin silicon target material is located, the twin silicon target material is electrically connected with a medium-frequency power supply, and the aluminum target material is electrically connected with a direct-current power supply. According to the structural design, on one hand, the uniform deposition range can be expanded, the deposition difference of wide workpieces can be reduced, and the whole surface insulation consistency can be ensured, and on the other hand, the aluminum target realizes uniform doping of the aluminum element and stable control of the content, so that the toughness and binding force of the coating are improved, the influence on insulation is avoided, and the comprehensive performance of the non-conductive coating is remarkably improved.

The invention discloses a ferric sodium pyrophosphate positive electrode material, a preparation method thereof and a battery, and relates to the technical field of batteries. Pre-sintering is performed; sanding and spray drying; and high-temperature sintering. Wherein the pH value of the reaction is controlled by using a Tris-HCl buffer solution in the hydrothermal reaction, so that the precursor is uniformly crystallized and has high crystallinity, and low-temperature segmented presintering is adopted later, so that the compaction density of the material can be controlled, and the related electrical properties of the material are relatively good. In the preparation process, a carbon source and a doping element are supplemented twice, so that carbon coating is uniform in the sintering process, the compaction density of the NFPP positive electrode material is further improved, the properties such as theoretical specific capacity of the positive electrode material are better through doping and carbon coating modification, and the high-compaction and high-capacity ferric sodium pyrophosphate positive electrode material is obtained.

The invention belongs to the technical field of power devices, and provides a silicon carbide device structure, a preparation method thereof and a chip, a P-type heavily doped region is isolated from a junction field effect transistor region at an adjacent position by a P-type well region, and an N-type heavily doped region is isolated from the junction field effect transistor region at an adjacent position by the P-type well region. The adjacent junction field effect transistor regions are isolated by the P-type well regions, so that a super-junction-like structure is formed, the junction field effect transistor regions can have donor doping with higher doping concentration, corner arrangement is avoided, a depletion region can be completely closed, the on resistance of the device is reduced, and the reliability of the device is improved.

The invention provides a heterojunction solar cell and a preparation method thereof, and the method comprises the steps: sequentially arranging oxygen-containing crystalline silicon layers of a first conduction type on the surface, far away from a substrate, of a first passivation layer through employing a set deposition technology, wherein the oxygen atom doping concentration of the oxygen-containing crystalline silicon layers is gradually increased in the direction away from the substrate; on one hand, light oxygen doping is arranged at the interface of the first passivation layer, so that the dark attenuation phenomenon of a heterojunction cell is reduced, and the power off-shift problem of a photovoltaic module is further reduced; on the other hand, heavy oxygen doping is arranged on one side far away from the first passivation layer, so that the optical band gap and the short-circuit current of the crystalline silicon layer on the light receiving surface are effectively improved; and finally, oxygen-free doping is arranged at an interface adjacent to the transparent conducting layer, so that ohmic contact between the oxygen-containing crystal silicon layer and the transparent conducting layer is effectively reduced. Therefore, the comprehensive electrical performance of the heterojunction solar cell is effectively ensured and improved.

The invention relates to a solar cell and a preparation method thereof. According to the preparation method of the solar cell, the amorphous silicon layer is formed on the back tunneling oxide layer, the doped polycrystalline silicon layer is formed in the first process through diffusion doping treatment, and the doped silicon oxide layer is formed on the doped polycrystalline silicon layer in the second process. And after the doped silicon oxide layer is formed, selective heavy doping of the back surface is realized by adopting a laser doping process, and a selective emitter is formed in a heavy doping region. On one hand, the doped silicon oxide layer can provide sufficient impurity ions for SE doping, and on the other hand, the doped silicon oxide layer can protect the tunneling oxide layer and reduce or prevent the tunneling oxide layer from being damaged in the SE laser doping process, so that a good passivation effect can be achieved.

The invention relates to the technical field of semiconductor processing, and particularly discloses a gas inlet structure and a P-type silicon carbide epitaxial growth device and method.The gas inlet box adopts three channels for gas inlet, the mode that C2H4, TCS and TMA enter a reaction chamber can be flexibly controlled, and the thickness of large-size SiC epitaxy and the uniformity of doping concentration can be more accurately regulated and controlled; by adjusting the combination of the air inlet channel and the flow, the P-type doping concentration difference between the edge and the center of the SiC epitaxial wafer can be greatly reduced during P-type high-speed epitaxial growth, and low doping concentration non-uniformity is achieved; starting from two aspects of SiC epitaxial equipment hardware and a process method, a simple and effective hardware design scheme and an epitaxial process method are provided to solve the problem of poor doping concentration uniformity of a P-type epitaxial wafer during high-speed epitaxial growth. Compared with single modification of epitaxial equipment or single adjustment of epitaxial process parameters, the method is more time-saving and labor-saving, and the effect is better.

The invention relates to the technical field of solar cells, and provides a back contact solar cell, a cell assembly and a photovoltaic system.In the back contact solar cell, first doping structures and second doping structures are alternately arranged in the first direction, each first doping structure comprises a plurality of first doping parts arranged at intervals in the second direction, and each second doping structure comprises a plurality of second doping parts arranged at intervals in the second direction. The first doping structure comprises a plurality of first doping parts which are arranged at intervals in the second direction, a first gap is formed between every two adjacent first doping parts, the second doping structure comprises a plurality of second doping parts which are arranged at intervals in the second direction, and a second gap is formed between every two adjacent second doping parts. Therefore, parasitic absorption of the back surface can be reduced, the double-sided rate of the back contact solar cell is improved, metallization recombination can be effectively reduced, and the efficiency of the back contact solar cell is improved.

The invention belongs to the technical field of lithium ion battery positive electrode materials, and particularly relates to a double-strategy modified high-nickel positive electrode material as well as a preparation method and application thereof. According to the double-strategy modified high-nickel positive electrode material, a high-nickel positive electrode material serves as a matrix, surface coating and bulk phase doping are achieved at the same time through competitive doping of main group elements, a coating layer is a fast ion conductor LiLaO2 nano layer, and a bulk phase doping element is Y. The fast ion conductor coating layer can provide an additional ion channel, promote conduction of ions on the surface of the positive electrode material, reduce interface impedance and improve the rate capability of the battery. The doping elements can optimize the crystal structure of the positive electrode material and can relieve stress generated in the charging and discharging process, so that phase change and structural degradation are reduced, and the structural stability of the positive electrode material is improved.

The invention discloses a solar cell process passivation monitoring and repairing device, which relates to the technical field of crystalline silicon solar cell manufacturing, and comprises a test probe row, a roller slide platform, a data analysis system and a laser, the laser is a purple picosecond laser, the pulse energy density is 500W / cm < 2 >-8000W / cm < 2 >, the laser repetition frequency is 500KHz-2000KHz, and the pulse stability is less than 3% RMS. According to the invention, monitoring data is collected, an abnormal area and repair data are analyzed and fed back to the laser, the laser adopts laser with a certain pulse signal to carry out thermal processing, crystal lattices are enabled to vibrate orderly through thermal driving, and internal doping of polycrystalline silicon is redistributed, so that the purpose of repairing an abnormal silicon wafer is achieved. And the manufacturing cost of the solar cell is further reduced.

The invention discloses a TBC battery and a preparation method thereof. The method comprises the following steps: providing an N-type silicon substrate; the N-type silicon substrate comprises a front surface and a back surface, and the back surface comprises first regions and second regions which are alternately arranged in an interdigital manner; preparing a first tunneling oxide layer, a first doping layer and a first protection layer in the first region by using a preset high-temperature condition; preparing a second tunneling oxide layer, a second doping layer and a second protection layer in the second region; performing front surface texturing on the front surface, and preparing a third protective layer on the front surface; and performing silk-screen printing and high-temperature sintering on the first region and the second region to form a first electrode in contact with the first doping layer on the surface of one side, deviating from the N-type silicon substrate, of the first protection layer and form a second electrode in contact with the second doping layer on the surface of one side, deviating from the N-type silicon substrate, of the second protection layer, so as to prepare the TBC battery. By utilizing the method, high-temperature top-speed doping of the first region is realized, the preparation time of the battery is shortened, and the conversion efficiency of the battery is improved.

The invention provides an ultrahigh-nickel single-crystal positive electrode material and a preparation method and application thereof.The ultrahigh-nickel single-crystal positive electrode material comprises fluxing agent doping elements and high-valence doping elements, the fluxing agent doping elements comprise Zr, Ce, Sr, Y, La, Sn or Na, and the high-valence doping elements comprise Sb, W, Nb, Ta, Mo, Ti or P; the doping amount of the fluxing agent doping element is omega A, the doping amount of the high-valence doping element is omega B, and omega A and omega B meet the following relational expression: 0.5 < 0.746 * exp [-omega B / (0.891 * omega A)] + 0.556 < 1.0. Omega A and Omega B meet a specific relational expression, two doping elements are effectively promoted to play a role, a small-particle-size and uniformly-dispersed single crystal is formed, the material has high stability and safety of the single crystal, a Li < + > diffusion path can be shortened, dynamics can be improved, and the advantage of high capacity can be achieved.

The invention provides an epitaxial structure, a manufacturing method and a chip structure. The epitaxial structure comprises a plurality of sub-active layers, wherein each sub active layer is doped with doping elements with different concentrations. As and / or Sb trace elements are doped into the active layer, so that the disorder degree of the active layer is improved, and the internal quantum efficiency and the luminous efficiency are improved. By adopting a segmented doping mode, the forbidden bandwidth difference caused by strain accumulation of quantum well layer materials at different positions is corrected, so that the light-emitting wavelength is more consistent, and the light-emitting efficiency is further improved.

Provided is a semiconductor laser and a display device thereof. The semiconductor laser includes a first semiconductor layer, a second semiconductor layer, and an active layer located therebetween; a first waveguide layer is disposed between the first semiconductor layer and the active layer, and a second waveguide layer is disposed between the second semiconductor layer and the active layer; an electron blocking layer is disposed between the second waveguide layer and the second semiconductor layer; the electron blocking layer includes at least a part of a P-type doped layer on a side close to the second semiconductor layer, in which a composition of the P-type doped layer is greater than 1E19−3; and a P-type doping concentration of the side of the electron blocking layer close to the second semiconductor layer is higher than a P-type doping concentration of the electron blocking layer away from the second semiconductor layer.

The invention relates to a photovoltaic monocrystalline silicon material resistivity uniformity evaluation method, and belongs to the technical field of photovoltaic material detection. The method comprises the following steps: evaluating all-form resistivity and doping uniformity of a photovoltaic single crystal silicon rod, a single crystal silicon wafer and a single crystal silicon square wafer; carrying out standardized point distribution on the monocrystalline silicon wafer by using a concentric circular ring and a small circle, and calculating in-plane uniformity by using a triple integral derivation equation; the monocrystalline silicon square pieces are distributed in the form of grid small squares, and in-plane uniformity is calculated by means of a triple integral derivation equation; and for the axial direction of the silicon rod, the uniformity is quantified by utilizing range and variance models through the resistivity of the head, middle and tail wafers. Meanwhile, a continuous grid is generated through interpolation, and a 3D color mapping curved surface diagram with plane projection is drawn to visually present distribution. According to axial and in-plane uniformity results, silicon wafers are classified and graded, the doping uniformity of monocrystalline silicon is accurately reflected, and a support is provided for quality control, process optimization and silicon wafer sorting of photovoltaic monocrystalline silicon.

The preparation process comprises the following steps: dissolving ammonium dimolybdate, ammonium rhenate and water at a high temperature, then adding zirconium hydroxide, uniformly mixing, carrying out vacuum drying, carrying out two-stage hydrogen reduction on the obtained precursor composite powder, and carrying out vacuum drying to obtain the zirconium dioxide reinforced phase-containing molybdenum-rhenium alloy capable of inhibiting abnormal growth of crystal grains, thereby obtaining the zirconium dioxide reinforced phase-containing molybdenum-rhenium alloy capable of inhibiting abnormal growth of crystal grains. Zirconium oxide reinforced molybdenum-rhenium composite powder obtained after reduction is subjected to cold isostatic pressing, pressureless sintering and hot isostatic pressing to obtain zirconium oxide reinforced molybdenum-rhenium alloy, and then the zirconium oxide reinforced molybdenum-rhenium alloy is obtained through high-temperature rolling and recrystallization annealing treatment. According to the method, atomic-level mixing of molybdenum and rhenium is achieved through liquid-phase doping, the microstructure of the molybdenum-rhenium alloy is more uniform and fine due to addition of ZrO2, the recrystallization temperature is increased, and the phenomenon that sintered grains of the molybdenum-rhenium alloy grow abnormally is relieved. And by optimizing the annealing process and regulating and controlling the annealing mode, grains are rearranged to form a more uniform microstructure, abnormal growth of the grains is further inhibited, and the high-temperature tensile strength and the ductility of the molybdenum-rhenium alloy are improved.

The invention provides a lithium manganate precursor with a crystal face induction effect, a preparation method of the lithium manganate precursor, a positive electrode material and a lithium battery, and belongs to the technical field of energy materials, the lithium manganate precursor can play a crystal face induction role in the subsequent lithium mixing sintering process, the lithium manganate precursor is spherical-particle manganous-manganic oxide, the particle size D50 is 3-15 microns, and the particle size D50 is 3-15 microns. The primary particles are uniform in size. The core advantage of the method is that synchronous and uniform doping of the element M and the element M'is realized at the precursor stage through a coprecipitation method. The co-precipitation doping technology not only ensures the atomic-scale uniform distribution of doping elements in manganous-manganic oxide, but also effectively stabilizes the crystal structure of the lithium manganate positive electrode material by utilizing the synergistic effect of the elements in the subsequent sintering process, and realizes the selective induced growth of the crystal face. The unique crystal face induction effect has significant contribution to improvement of the electrochemical performance, including cycling stability, rate capability and safety, of the positive electrode material.

The invention relates to a TBC battery and a preparation method thereof. The preparation method comprises the following steps: S1, forming a dielectric region and a polycrystalline silicon layer; s2, forming a dopant source layer of the first conductive type impurities; s3, opening the film and cleaning; s4, one-step co-doping of impurities of different conductive types; the thickness of the dopant source layer of the first conductive type impurities is 10 nm to 100 nm. According to the invention, the dopant source layer of the first conductive type impurities is formed firstly, so that the high-temperature doping times, the cleaning times and the film opening times are reduced, the doping temperature is reduced, the process time is shortened, the process flow is simplified, the equipment investment cost is reduced, and the internal composite action of the cell is reduced, thereby improving the photoelectric conversion efficiency.

The invention provides a preparation method and system for improving the reliability of a gallium nitride transistor, and relates to the technical field of manufacturing, and the method comprises the steps: placing a pretreated sapphire substrate in metal organic chemical vapor deposition equipment, introducing trimethyl gallium and ammonia gas as precursors, and carrying out the epitaxial growth of gallium nitride; an alternating pulse supply technology is adopted, and trace iron doping is introduced in the epitaxial growth process so as to reduce the background carrier concentration in the gallium nitride layer; forming a source electrode structure, a drain electrode structure and a grid electrode structure on the gallium nitride epitaxial layer by adopting photoetching and plasma etching technologies; then, a layer of hafnium oxide with the thickness of 5-10 nanometers is deposited in the grid electrode area through the atomic layer deposition technology to serve as a grid dielectric layer; then a plasma enhanced chemical vapor deposition technology is adopted; and finally, the whole device is processed by using a laser annealing technology, and the annealing process is carried out in a nitrogen atmosphere so as to eliminate an interface state and reduce leakage current.