2273 results about "Doping" patented technology

The invention discloses a preparation method of a composite high-entropy hard carbon negative electrode material and a sodium ion battery, and relates to the technical field of electrochemical energy storage materials. Existing doping limit is broken through through'high entropy design ', atomic-scale mixing of five elements and more than five elements is realized, strong structural stability which cannot be realized by traditional binary / ternary doping is achieved, 'molecular anchoring' and'entropy locking 'are completed by combining a pre-assembly technology with stepped carbonization, the problem of pain point of multi-element segregation is solved, and the method is suitable for large-scale industrial production. Sodium storage dynamic and thermodynamic properties of a high-entropy hard carbon precursor and an intermediate are synchronously improved through elaborate combination design of multiple elements and subsequent carbonization process parameter optimization, 'defect-interlayer spacing-pore structure 'triple regulation is realized, and the defect degree of high-entropy hard carbon is reduced through design of a coating process; the prepared composite high-entropy hard carbon negative electrode material shows excellent comprehensive performance in a sodium-ion battery, and especially has obvious advantages in high initial coulombic efficiency, high rate capability and long stability.

The embodiment of the invention relates to the photovoltaic field, and provides a back contact battery and a manufacturing method thereof, and a photovoltaic module, the back contact battery comprises a substrate, the substrate is provided with a first surface and a second surface which are opposite to each other along a first direction, and the second surface is provided with first regions and second regions which are alternately arranged along a second direction; the first dielectric layer and the first doping layer are stacked on the first region, and P-type doping elements are arranged in the first doping layer; the second dielectric layer and the second doping layer are stacked on the second region, and the second doping layer is provided with N-type doping elements; wherein the first doped layer comprises N layers of stacked first doped films, the crystallization rate of the (N-1) th layer of first doped film is higher than the crystallization rate of the Nth layer of first doped film in the direction away from the substrate, and N is a positive integer greater than or equal to 2. The embodiment of the invention is at least beneficial to improving the photoelectric conversion efficiency of the back contact battery.

The invention belongs to the field of battery materials, and discloses a high-entropy high-nickel positive electrode material which comprises a base material LiNixCoyMzO2, a base further comprises a lithium-site doping element and a nickel-site doping element, the surface of the base is coated with an island-shaped coating layer, and the island-shaped coating layer is a nano metal oxide layer. The preparation method comprises the following steps: uniformly mixing a high-nickel hydroxide precursor, a lithium source, a compound containing an element A and a compound containing an element B, carrying out two-stage sintering, mixing with a metal oxide containing an element C and a metal oxide containing an element D, and sintering to obtain the high-entropy high-nickel positive electrode material. Lithium doping in a bulk phase of the high-entropy high-nickel positive electrode material can improve the electronic conductivity of a single crystal material, increase the interlayer spacing of transition metal and inhibit lithium and nickel positive ions from being mixed, and nickel doping can improve the structural stability and thermal stability of the material, inhibit irreversible phase change of H2-H3 and stabilize lattice oxygen of the material; the doping modification of the two sites further improves the performance of the material.

The invention relates to a magnetron sputtering system and a coating method thereof, the system comprises a pair of twin silicon target material and aluminum target material which are arranged in a coating chamber, the aluminum target material is located in the middle of a horizontal line where the twin silicon target material is located, the twin silicon target material is electrically connected with a medium-frequency power supply, and the aluminum target material is electrically connected with a direct-current power supply. According to the structural design, on one hand, the uniform deposition range can be expanded, the deposition difference of wide workpieces can be reduced, and the whole surface insulation consistency can be ensured, and on the other hand, the aluminum target realizes uniform doping of the aluminum element and stable control of the content, so that the toughness and binding force of the coating are improved, the influence on insulation is avoided, and the comprehensive performance of the non-conductive coating is remarkably improved.

The invention belongs to the technical field of power devices, and provides a silicon carbide device structure, a preparation method thereof and a chip, a P-type heavily doped region is isolated from a junction field effect transistor region at an adjacent position by a P-type well region, and an N-type heavily doped region is isolated from the junction field effect transistor region at an adjacent position by the P-type well region. The adjacent junction field effect transistor regions are isolated by the P-type well regions, so that a super-junction-like structure is formed, the junction field effect transistor regions can have donor doping with higher doping concentration, corner arrangement is avoided, a depletion region can be completely closed, the on resistance of the device is reduced, and the reliability of the device is improved.

The invention relates to the technical field of solar cells, and provides a back contact solar cell, a cell assembly and a photovoltaic system.In the back contact solar cell, first doping structures and second doping structures are alternately arranged in the first direction, each first doping structure comprises a plurality of first doping parts arranged at intervals in the second direction, and each second doping structure comprises a plurality of second doping parts arranged at intervals in the second direction. The first doping structure comprises a plurality of first doping parts which are arranged at intervals in the second direction, a first gap is formed between every two adjacent first doping parts, the second doping structure comprises a plurality of second doping parts which are arranged at intervals in the second direction, and a second gap is formed between every two adjacent second doping parts. Therefore, parasitic absorption of the back surface can be reduced, the double-sided rate of the back contact solar cell is improved, metallization recombination can be effectively reduced, and the efficiency of the back contact solar cell is improved.

The invention belongs to the technical field of lithium ion battery positive electrode materials, and particularly relates to a double-strategy modified high-nickel positive electrode material as well as a preparation method and application thereof. According to the double-strategy modified high-nickel positive electrode material, a high-nickel positive electrode material serves as a matrix, surface coating and bulk phase doping are achieved at the same time through competitive doping of main group elements, a coating layer is a fast ion conductor LiLaO2 nano layer, and a bulk phase doping element is Y. The fast ion conductor coating layer can provide an additional ion channel, promote conduction of ions on the surface of the positive electrode material, reduce interface impedance and improve the rate capability of the battery. The doping elements can optimize the crystal structure of the positive electrode material and can relieve stress generated in the charging and discharging process, so that phase change and structural degradation are reduced, and the structural stability of the positive electrode material is improved.

The invention relates to a photovoltaic monocrystalline silicon material resistivity uniformity evaluation method, and belongs to the technical field of photovoltaic material detection. The method comprises the following steps: evaluating all-form resistivity and doping uniformity of a photovoltaic single crystal silicon rod, a single crystal silicon wafer and a single crystal silicon square wafer; carrying out standardized point distribution on the monocrystalline silicon wafer by using a concentric circular ring and a small circle, and calculating in-plane uniformity by using a triple integral derivation equation; the monocrystalline silicon square pieces are distributed in the form of grid small squares, and in-plane uniformity is calculated by means of a triple integral derivation equation; and for the axial direction of the silicon rod, the uniformity is quantified by utilizing range and variance models through the resistivity of the head, middle and tail wafers. Meanwhile, a continuous grid is generated through interpolation, and a 3D color mapping curved surface diagram with plane projection is drawn to visually present distribution. According to axial and in-plane uniformity results, silicon wafers are classified and graded, the doping uniformity of monocrystalline silicon is accurately reflected, and a support is provided for quality control, process optimization and silicon wafer sorting of photovoltaic monocrystalline silicon.

The invention provides a lithium manganate precursor with a crystal face induction effect, a preparation method of the lithium manganate precursor, a positive electrode material and a lithium battery, and belongs to the technical field of energy materials, the lithium manganate precursor can play a crystal face induction role in the subsequent lithium mixing sintering process, the lithium manganate precursor is spherical-particle manganous-manganic oxide, the particle size D50 is 3-15 microns, and the particle size D50 is 3-15 microns. The primary particles are uniform in size. The core advantage of the method is that synchronous and uniform doping of the element M and the element M'is realized at the precursor stage through a coprecipitation method. The co-precipitation doping technology not only ensures the atomic-scale uniform distribution of doping elements in manganous-manganic oxide, but also effectively stabilizes the crystal structure of the lithium manganate positive electrode material by utilizing the synergistic effect of the elements in the subsequent sintering process, and realizes the selective induced growth of the crystal face. The unique crystal face induction effect has significant contribution to improvement of the electrochemical performance, including cycling stability, rate capability and safety, of the positive electrode material.

The invention relates to the technical field of photovoltaic crystal growth, in particular to a method for improving the axial resistance uniformity of an antimony-doped silicon single crystal and the antimony-doped silicon single crystal. The method provided by the invention comprises the following steps: growing the antimony-doped silicon single crystal by adopting a czochralski method, and at an equal-diameter stage, controlling the furnace pressure to be 4-13torr; in the czochralski method, after leading and releasing are failed or growth of a single antimony-doped silicon single crystal is completed, supplemental doping of an antimony element is carried out according to the volatilization amount of the antimony element. In the method disclosed by the invention, the tail resistance and the head resistance of the prepared antimony-doped silicon single crystal are kept highly consistent by controlling the furnace pressure at the equal-diameter stage, regulating and controlling the volatilization rate of the antimony element, combining the segregation phenomenon of the antimony element in silicon and determining the supplementary doping time of the antimony element.

The invention discloses a modified composite sulfide solid electrolyte as well as a preparation method and application thereof. The chemical composition of the modified composite sulfide solid electrolyte is xLi < 7-a > PS < 6-a > X . YLi < 7-b-c + dPbM < 1-b > S < 6-c-dOcId, X is at least one of Br, Cl or F, a is more than or equal to 0 and less than or equal to 2, b is more than or equal to 0 and less than 1, c is more than or equal to 0 and less than or equal to 2, d is more than or equal to 1 and less than or equal to 2, x is more than 0 and less than or equal to 1, y is more than 0 and less than or equal to 1, and x + y is equal to 1. The sulfide solid electrolyte is subjected to doping modification through a halogen-rich strategy and a soft acid and hard alkali theory, F / Cl / Br-rich and Sn-O-rich double doping is performed on the argyrodite type sulfide electrolyte, the argyrodite type sulfide electrolyte with the same structure is obtained, and the argyrodite type sulfide electrolyte has high ionic conductivity and low activation energy. The sulfide solid electrolyte disclosed by the invention is applied to a solid-state battery and has relatively high initial coulombic efficiency, capacity and cycle performance.

The invention discloses an atom manipulation construction method of an artificial quantum structure on a two-dimensional layered material substrate, which comprises the following steps of: under an ultrahigh vacuum condition, evaporating and depositing noble metal atoms and non-metal atoms on the surface of a two-dimensional layered material by a molecular beam epitaxy method, and applying a voltage pulse through a tip of a scanning tunneling microscope to construct the artificial quantum structure on the two-dimensional layered material substrate. The method comprises the following steps: accurately lifting and placing monodisperse noble metal atoms, applying a voltage pulse through a tip of a scanning tunneling microscope, accurately placing a single non-metal atom near the noble metal atoms, accurately lifting and placing the single noble metal atom and the non-metal atom for multiple times, and carrying out N-type and P-type doping. And construction of an atomic-scale precise artificial quantum structure is realized. According to the method, accurate positioning, lifting, carrying, placing and other operations of the monatomic on the surface of the two-dimensional layered material are carried out, the problems of controllable control and structure construction of the monatomic on the surface of the two-dimensional layered material are solved, preparation of the diatomic PN junction is achieved, and a feasible scheme is provided for accurate design of quantum devices with atomic scales.

The invention relates to the technical field of batteries, in particular to a composite positive electrode material and a preparation method and application thereof. A composite positive electrode material comprises a positive electrode base material, the chemical formula of the positive electrode base material is LimNixCoyMnzQaRdO2, m is larger than or equal to 1 and smaller than or equal to 1.2, and xlt is larger than or equal to 0.5; 1, 0lt; yt; Yt; 0.5, Li comprises a primary Li element and a secondary Li element, Q is a primary doping element, 0 lt; a < = 0.5, R is a secondary doping element, and 0 < d < = 0.5; x + y + z + a + d = 1, and the doping depth h of the secondary doping element meets 0 lt; h is less than or equal to 850nm; and the particle sizes D10, D50 and D90 of the positive electrode base material meet the condition that (D90-D10) / D50 is more than or equal to 0.8 and less than or equal to 1.15. According to the composite positive electrode material, the phenomena of enrichment of doping elements on the surface of a single crystal and non-uniform lithiation in the single crystal can be relieved, so that the capacity and the cycling stability of the positive electrode material are improved.

The invention provides a preparation method of a solar cell and the solar cell. The preparation method comprises the following steps: providing a silicon substrate; forming at least one first tunneling layer and at least one first doping layer which are alternately arranged on the silicon substrate; and performing heat treatment on the first doping layer by using laser to form a second doping layer, and the second doping layer comprises polycrystalline silicon. According to the invention, the doped layer prepared by alternately performing the method of forming the doped layer and processing the doped layer by using the laser has relatively high doping concentration, and especially when the doping element comprises gallium, the doping concentration of the gallium element in the doped layer can be remarkably improved.

The invention discloses a TBC battery with a locally doped back surface and a preparation method thereof, and belongs to the technical field of solar cells, the TBC battery comprises a substrate with a height difference on the back surface, the substrate is an N-type or P-type silicon substrate, the front surface of the substrate is sequentially provided with a front surface passivation layer and a front surface antireflection layer from inside to outside, the back surface of the substrate is provided with a tunneling oxide layer, and the back surface of the substrate is provided with a back surface passivation layer. A doping layer, a back passivation layer, a back antireflection layer and an electrode are sequentially arranged below the tunneling oxide layer; the doped layer comprises a homotype doped region which is homotype with the substrate and a special-shaped doped region which is special-shaped with the substrate; the same-type doped region and the special-shaped doped region are gapless in the horizontal direction and are distributed in a staggered manner in the vertical direction, and the electrode penetrates through the back passivation layer and the back antireflection layer. The same-type doped regions and the special-shaped doped regions are gapless in the horizontal direction and are staggered in the vertical direction, so that a gap region is prevented from occupying a carrier collection area, the carrier collection efficiency is improved, and the conversion efficiency of the cell is improved.

The invention discloses nickel-based brazing filler metal doped with rare earth Tm and a brazed diamond thereof, and belongs to the technical field of brazing. The brazing filler metal is obtained through vacuum arc melting of element particles of Ni, Cr, B, Si, Fe and Tm under argon protection, the brazing filler metal comprises, by weight, 76.0%-82.0% of Ni, 9.0%-13% of Cr, 2.0%-4.0% of B, 3.0%-5.0% of Si, 2.0%-5.0% of Fe and 0-2% of Tm, and the brazing diamond is obtained through heating under the conditions that the vacuum degree is smaller than 2.0 * 10 <-3 > Pa, the brazing temperature is 1080 DEG C and the heat preservation time is 5 min. Results show that Tm doping can optimize the structure of the brazing filler metal, improve the mechanical property of brazing filler metal alloy, effectively improve the holding strength of the diamond in the brazing process and effectively inhibit thermal damage of the diamond after welding, so that the diamond can maintain the original performance to a large extent, and has better wear resistance in the service process.

The invention relates to a reworking method of a heterojunction solar cell. The reworking method comprises the following steps that defective products are pretreated, and dirt on the surfaces of the defective products is removed; forming a P-type doping layer on the surface, with the N-type doping layer, of the pre-treated defective product to obtain an intermediate product; and carrying out film removal treatment on the intermediate product, and removing a film layer on the surface of the intermediate product to obtain the silicon substrate. In the reworking method, the P-type doping layer is formed on the N surface of the defective product, and the P-type doping layer can play a role in protecting the N-type doping layer. In the subsequent film removing treatment, the excessive corrosion of the N surface can be reduced, so that the corrosion degrees of the P surface and the N surface in the film removing process can be close, the risk of excessive corrosion of the silicon substrate can be reduced on the basis of removing a bad film layer, the silicon substrate can be kept at a proper thickness for reutilization, and the reworking yield of the silicon substrate is further improved.

The invention discloses a chip structure capable of simultaneously improving deep ultraviolet LED crystal quality and injection efficiency and a preparation method. The chip structure comprises a substrate, a buffer layer is arranged on the substrate, a multi-quantum well layer is arranged above the buffer layer, an n-type doping layer is arranged on the side face of the multi-quantum well layer, and an n-type contact electrode is arranged above the n-type doping layer. A plurality of p-type doped layer plugs are inserted in the multi-quantum well layer, a p-type doped layer is arranged above the p-type doped layer plugs and the multi-quantum well layer, and a p-type contact electrode is arranged on the p-type doped layer; a passivation layer is arranged on the upper surface of the whole structure, and the thickened metal electrode penetrates through the passivation layer and is located on the n-type contact electrode and the p-type contact electrode. According to the invention, insufficient hole injection in the multi-quantum well layer and the crystal quality of the multi-quantum well layer can be improved at the same time.

The invention belongs to the technical field of wastewater treatment, and particularly relates to multi-element doped synergistically modified ferrihydrite as well as a preparation method and application thereof, and the ferrihydrite is doped with at least one rare earth element and at least one of an aluminum element and a silicon element; the doping amount of the rare earth elements in the ferrihydrite is 0.5-20wt%; the doping amount of the aluminum element in the ferrihydrite is 0-20wt%; the doping amount of the silicon element in the ferrihydrite is 0-20wt%. Compared with the prior art, the method solves the problems that in ferrihydrite single-element modification in the prior art, although stability is improved through Al / Si doping, element modification in the same period is limited in improvement of the adsorption capacity, and the specific recognition capacity on phosphate radicals cannot be improved; and the anti-interference performance of the rare earth doped in the complex water matrix still needs to be improved. According to the scheme, rare earth and Al / Si doping are combined, so that improvement of phosphorus adsorption stability, adsorption capacity, specific recognition capability and anti-interference performance of ferrihydrite is realized synergistically.

The invention belongs to the technical field of energy materials, and provides a multi-functional-layer lithium manganate positive electrode material and a preparation method thereof and a lithium battery, the multi-functional-layer lithium manganate positive electrode material comprises a core body and a coating layer, the core body sequentially comprises a bulk-phase-doped lithium manganate matrix, an induction doping layer and a modification doping layer from inside to outside, the chemical general formula of the core body is Li < 1 + a > Mn < 2-b-c-d > M R < c > X < d > O < 4-e > Z < e >, bulk phase doping elements of the matrix are M and Z, a crystal face induction element is X, and a modification doping element is R; the coating layer is a compound comprising a coating element M '; a supported crystal face inducer is also adopted for further inhibiting the growth of the crystal face (111) and reducing the area of the crystal face (111) so as to form the positive electrode material of a polyhedral spinel crystal structure comprising at least 26 crystal faces, and the crystal face inducer comprises a phosphorus-containing compound, a boron-containing compound or at least + 5 valence metal salt; the Mn dissolution reaction is reduced, and the electrochemical performance of the lithium manganate is improved.

The invention discloses a vacancy-based controllable doping p-type two-dimensional transistor and a preparation method thereof, and mainly solves the problem that accurate controllable doping is difficult to realize in the prior art. According to the scheme, the device comprises an insulating substrate, a two-dimensional material channel layer, a source electrode, a drain electrode, a gate dielectric layer and a gate electrode, wherein the source electrode and the drain electrode are located at the two ends of the two-dimensional material channel layer; the gate dielectric layer is located on the two-dimensional material channel layer and the source and drain electrodes; the method comprises the following steps: depositing a thick mask layer, thinning the mask layer part through photoetching and etching to form a patterned thin layer, bombarding a two-dimensional material and a two-dimensional material under a mask plate thin layer through treated mask layer ions to form a surface vacancy, removing a mask plate, exposing the two-dimensional material in an oxygen flow, and oxidizing to form surface charge transfer doping. According to the invention, under the condition that the two-dimensional material is not damaged and the performance is not influenced, partitioned controllable doping is realized, and the conductivity of the two-dimensional transistor is effectively improved.

The invention relates to the technical field of sodium ion battery positive electrode materials, in particular to a boric acid modified ternary layered oxide positive electrode material and a preparation method and application thereof. The chemical general formula of the boric acid modified ternary layered oxide positive electrode material is Na2 / 3Ni1 / 3Co1 / 3Mn1 / 3BxO, and x is more than 0 and less than or equal to 0.09; the boric acid modified ternary layered oxide positive electrode material is subjected to boric acid modification treatment and comprises interstitial doping of boron elements and a surface BO coating layer, the interstitial doped boron elements are located at tetrahedral sites of a transition metal layer, and the thickness of the BO coating layer is 3 nm to 10 nm. The boric acid modified ternary layered oxide positive electrode material prepared by the invention shows high specific capacity, good cycling stability and excellent rate capability in the sodium ion battery, and meanwhile, the preparation method disclosed by the invention has the advantages of simple preparation process, high cost effectiveness and the like, and has a wide application prospect.

The invention relates to the technical field of dielectric ceramics, and provides a gadolinium-tantalum co-doped strontium titanate-based giant dielectric ceramic material and a preparation method thereof. The gadolinium-tantalum co-doped strontium titanate-based giant dielectric ceramic material is obtained by co-doping a strontium titanate material with gadolinium and tantalum and sintering under a nitrogen condition. The gadolinium-tantalum co-doped strontium titanate-based giant dielectric ceramic material prepared by the method is stable in structure, grains are refined and grow more compactly through nitrogen atmosphere sintering, the types of defect structures in the material are richer through a double-element doping and atmosphere sintering process, and the dielectric property of the strontium titanate-based giant dielectric ceramic material is improved. The result of the embodiment shows that when x is equal to 0.015, the dielectric constant of the gadolinium-tantalum co-doped strontium titanate-based giant dielectric ceramic material is 320926 and the dielectric loss is 0.1119 at the room temperature and the test frequency of 1kHz.

The invention belongs to the technical field of organic electroluminescent materials, and provides an iridium-containing heterocyclic phosphorescent doping material and an organic electroluminescent device.The doping material has a compound general formula shown in the formula I. Quinoline and a naphthalene ring are connected through silane or germane, and a silicon or germanium six-membered heterocyclic structure is formed. And reacting with iridium metal and a diketone monomer to obtain the iridium metal heterocyclic phosphorescent organic light-emitting material. The heteroatom silicon or germanium in the material can adjust molecular orbital HOMO and LUMO energy levels, and the polarity effect of heteroatoms promotes electron migration, reduces interface potential barriers and electron injection barriers, reduces carrier injection loss and improves carrier mobility, so that driving voltage is reduced, and the external quantum efficiency of a device is improved. In addition, the silicon or germanium heterocyclic ring has better rigidity, so that the overall stability of the structure is enhanced, and the rigid structure can prolong the service life of the device.

The invention discloses a high-stability sodium-ion battery manganese-based composite positive electrode material and a preparation method and application thereof, and belongs to the technical field of sodium-ion battery positive electrode materials. The chemical general formula of the positive electrode material is NaxNiaMnbTicM1-a-b-cO2, x is more than or equal to 0.6 and less than 0.8, a is more than or equal to 0 and less than 0.5, b is more than or equal to 0.3 and less than 0.8, c is more than or equal to 0 and less than 0.3, and M is any one or a combination of more of Li, Mg, Cu, Al, Ca or Zn. Spherical-structure precursor particles with uniform components can be obtained through a coprecipitation method, element replacement and doping are carried out through solid-phase sintering, the structural proportion is designed in a customized mode, and then the positive electrode material is obtained. The manganese-based positive electrode material prepared by the invention has a P2 / O3 composite layered structure, is smooth in surface appearance and uniform in size, has very good structural stability in a wide voltage range of 2.2-4.3 V, and shows excellent rate and long cycle stability.

The invention relates to an ultrafine high-strength multi-component composite reinforced tungsten filament and a preparation method thereof, the tungsten filament comprises W, rare earth oxide (any one of La2O3, Y2O3 and CeO2) and alloy elements (Al, Si, K and Zr), the content of the rare earth oxide in the tungsten filament is 0.1-1.0 wt%, and the content of Al in the alloy elements is 0.025-0.05 wt%, the content of Si is 0.1-0.2 wt%, the content of K is 0.28-0.56 wt%, the content of Zr is 0.1-0.5 wt%, and the balance is W. The wire diameter of the tungsten filament is 28-30 [mu] m; the tensile strength of the tungsten filament is more than 7100 MPa, and the length of a single tungsten filament is more than 150 thousand meters. According to the tungsten wire, through multi-phase composite doping, the purpose of synergistic strengthening such as nano-particle dispersion strengthening, fine grain strengthening and grain boundary strengthening is achieved, and the superfine high-strength tungsten alloy wire with good toughness can be obtained.

The invention relates to a sodium electrode layered oxide and a preparation method and application thereof. The sodium electrode layered oxide comprises a positive electrode material and a coating layer on the particle surface of the positive electrode material, the coating layer comprises perovskite and sodium metaaluminate. The sodium electrode layered oxide provided by the invention has a uniform composite coating layer comprising perovskite and sodium metaaluminate, and by combining interface gradient doping, the cycling stability of a positive electrode material under high voltage can be remarkably improved.

The invention relates to a P-type GaN LED epitaxial structure based on segmented annealing and compensation doping and a preparation method thereof, and belongs to the technical field of nitride semiconductor epitaxial growth and doping activation. The epitaxial structure sequentially comprises a buffer layer, a non-doped GaN layer, an N-type GaN layer, a multi-quantum well active layer, a P-type AlGaN electron barrier layer, a P-type GaN layer and an MgN compensation layer which are arranged on the substrate layer; wherein the MgN compensation layer is a high-concentration magnesium-doped nitride semiconductor layer, is arranged on the P-type GaN layer, and is used for compensating Mg loss and inhibiting nitrogen vacancy formation in the subsequent annealing process. The preparation method comprises the steps of performing multi-stage annealing treatment on the P-type GaN layer, performing epitaxial growth and annealing on the compensation layer, and finally performing low-temperature post-treatment annealing to form a surface passivation region. According to the structure, the Mg activation efficiency and the hole concentration are remarkably improved through an in-vivo activation and surface compensation synergistic mechanism, the contact resistance is reduced, the conductivity and the light-emitting performance of an LED device are improved, and the structure has excellent implementability and industrialization prospects.

The invention discloses a thermal-decay-resistant red light Micro LED epitaxial structure and a preparation method thereof. The epitaxial structure sequentially comprises a substrate layer, an n-type buffer layer, an n-type etching barrier layer, an n-type ohmic contact layer, an n-type limiting layer, a quantum well structure, a p-type spacer layer, a p-type electron barrier layer and a p-type ohmic contact layer from bottom to top. Wherein the quantum well structure is formed by alternating 1-5 pairs of InGaP well layers and three-section type p-type AlGaInP barrier layers, and the three sections of barrier layers adopt gradient energy level design and are all subjected to p-type doping; according to the invention, the problems of carrier loss and low recombination efficiency at high temperature in the prior art are solved by blocking electron overflow through the gradient energy level barrier and supplementing the hole concentration through p-type doping, so that the 85 DEG C external quantum efficiency attenuation rate is less than or equal to 10%, the service life is prolonged to more than 50,000 hours, and the process is compatible with mass production and is suitable for the fields of display, illumination and the like.

The invention discloses an LTO film thickness uniformity optimization method through an APCVD method, and particularly relates to the technical field of semiconductor manufacturing, and the method comprises the following steps: S1, prefabricating a silicon wafer; s2, selecting a tungsten filament ring; s3, installing a tungsten filament ring; s4, depositing an LTO thin film; s5, measuring the thickness of the LTO thin film of the silicon wafer; and S6, confirming the service life of the tungsten filament ring. According to the LTO film thickness uniformity optimization method through the APCVD method, the silicon wafer is chamfered, stress concentration and dislocation are reduced, wafer edge breakage and inward movement of thermal stress defects are effectively prevented, a more stable substrate is provided for follow-up film deposition, a tungsten filament ring of a specific specification is selected and correctly installed, and the uniformity of the thickness of the LTO film is improved. The diffusion and transmission conditions of gas in the APCVD process can be improved, the problems of stacking faults, crystal points, self-doping and the like after epitaxy caused by non-uniform films are reduced, and the consistency and reliability of device performance are improved.