1891 results about "Doping" patented technology

The invention discloses a preparation method of a composite high-entropy hard carbon negative electrode material and a sodium ion battery, and relates to the technical field of electrochemical energy storage materials. Existing doping limit is broken through through'high entropy design ', atomic-scale mixing of five elements and more than five elements is realized, strong structural stability which cannot be realized by traditional binary / ternary doping is achieved, 'molecular anchoring' and'entropy locking 'are completed by combining a pre-assembly technology with stepped carbonization, the problem of pain point of multi-element segregation is solved, and the method is suitable for large-scale industrial production. Sodium storage dynamic and thermodynamic properties of a high-entropy hard carbon precursor and an intermediate are synchronously improved through elaborate combination design of multiple elements and subsequent carbonization process parameter optimization, 'defect-interlayer spacing-pore structure 'triple regulation is realized, and the defect degree of high-entropy hard carbon is reduced through design of a coating process; the prepared composite high-entropy hard carbon negative electrode material shows excellent comprehensive performance in a sodium-ion battery, and especially has obvious advantages in high initial coulombic efficiency, high rate capability and long stability.

The embodiment of the invention relates to the photovoltaic field, and provides a back contact battery and a manufacturing method thereof, and a photovoltaic module, the back contact battery comprises a substrate, the substrate is provided with a first surface and a second surface which are opposite to each other along a first direction, and the second surface is provided with first regions and second regions which are alternately arranged along a second direction; the first dielectric layer and the first doping layer are stacked on the first region, and P-type doping elements are arranged in the first doping layer; the second dielectric layer and the second doping layer are stacked on the second region, and the second doping layer is provided with N-type doping elements; wherein the first doped layer comprises N layers of stacked first doped films, the crystallization rate of the (N-1) th layer of first doped film is higher than the crystallization rate of the Nth layer of first doped film in the direction away from the substrate, and N is a positive integer greater than or equal to 2. The embodiment of the invention is at least beneficial to improving the photoelectric conversion efficiency of the back contact battery.

The invention relates to a magnetron sputtering system and a coating method thereof, the system comprises a pair of twin silicon target material and aluminum target material which are arranged in a coating chamber, the aluminum target material is located in the middle of a horizontal line where the twin silicon target material is located, the twin silicon target material is electrically connected with a medium-frequency power supply, and the aluminum target material is electrically connected with a direct-current power supply. According to the structural design, on one hand, the uniform deposition range can be expanded, the deposition difference of wide workpieces can be reduced, and the whole surface insulation consistency can be ensured, and on the other hand, the aluminum target realizes uniform doping of the aluminum element and stable control of the content, so that the toughness and binding force of the coating are improved, the influence on insulation is avoided, and the comprehensive performance of the non-conductive coating is remarkably improved.

The invention belongs to the technical field of power devices, and provides a silicon carbide device structure, a preparation method thereof and a chip, a P-type heavily doped region is isolated from a junction field effect transistor region at an adjacent position by a P-type well region, and an N-type heavily doped region is isolated from the junction field effect transistor region at an adjacent position by the P-type well region. The adjacent junction field effect transistor regions are isolated by the P-type well regions, so that a super-junction-like structure is formed, the junction field effect transistor regions can have donor doping with higher doping concentration, corner arrangement is avoided, a depletion region can be completely closed, the on resistance of the device is reduced, and the reliability of the device is improved.

The invention relates to the technical field of solar cells, and provides a back contact solar cell, a cell assembly and a photovoltaic system.In the back contact solar cell, first doping structures and second doping structures are alternately arranged in the first direction, each first doping structure comprises a plurality of first doping parts arranged at intervals in the second direction, and each second doping structure comprises a plurality of second doping parts arranged at intervals in the second direction. The first doping structure comprises a plurality of first doping parts which are arranged at intervals in the second direction, a first gap is formed between every two adjacent first doping parts, the second doping structure comprises a plurality of second doping parts which are arranged at intervals in the second direction, and a second gap is formed between every two adjacent second doping parts. Therefore, parasitic absorption of the back surface can be reduced, the double-sided rate of the back contact solar cell is improved, metallization recombination can be effectively reduced, and the efficiency of the back contact solar cell is improved.

The invention relates to a photovoltaic monocrystalline silicon material resistivity uniformity evaluation method, and belongs to the technical field of photovoltaic material detection. The method comprises the following steps: evaluating all-form resistivity and doping uniformity of a photovoltaic single crystal silicon rod, a single crystal silicon wafer and a single crystal silicon square wafer; carrying out standardized point distribution on the monocrystalline silicon wafer by using a concentric circular ring and a small circle, and calculating in-plane uniformity by using a triple integral derivation equation; the monocrystalline silicon square pieces are distributed in the form of grid small squares, and in-plane uniformity is calculated by means of a triple integral derivation equation; and for the axial direction of the silicon rod, the uniformity is quantified by utilizing range and variance models through the resistivity of the head, middle and tail wafers. Meanwhile, a continuous grid is generated through interpolation, and a 3D color mapping curved surface diagram with plane projection is drawn to visually present distribution. According to axial and in-plane uniformity results, silicon wafers are classified and graded, the doping uniformity of monocrystalline silicon is accurately reflected, and a support is provided for quality control, process optimization and silicon wafer sorting of photovoltaic monocrystalline silicon.

The invention relates to the technical field of photovoltaic crystal growth, in particular to a method for improving the axial resistance uniformity of an antimony-doped silicon single crystal and the antimony-doped silicon single crystal. The method provided by the invention comprises the following steps: growing the antimony-doped silicon single crystal by adopting a czochralski method, and at an equal-diameter stage, controlling the furnace pressure to be 4-13torr; in the czochralski method, after leading and releasing are failed or growth of a single antimony-doped silicon single crystal is completed, supplemental doping of an antimony element is carried out according to the volatilization amount of the antimony element. In the method disclosed by the invention, the tail resistance and the head resistance of the prepared antimony-doped silicon single crystal are kept highly consistent by controlling the furnace pressure at the equal-diameter stage, regulating and controlling the volatilization rate of the antimony element, combining the segregation phenomenon of the antimony element in silicon and determining the supplementary doping time of the antimony element.

The invention relates to the technical field of batteries, in particular to a composite positive electrode material and a preparation method and application thereof. A composite positive electrode material comprises a positive electrode base material, the chemical formula of the positive electrode base material is LimNixCoyMnzQaRdO2, m is larger than or equal to 1 and smaller than or equal to 1.2, and xlt is larger than or equal to 0.5; 1, 0lt; yt; Yt; 0.5, Li comprises a primary Li element and a secondary Li element, Q is a primary doping element, 0 lt; a < = 0.5, R is a secondary doping element, and 0 < d < = 0.5; x + y + z + a + d = 1, and the doping depth h of the secondary doping element meets 0 lt; h is less than or equal to 850nm; and the particle sizes D10, D50 and D90 of the positive electrode base material meet the condition that (D90-D10) / D50 is more than or equal to 0.8 and less than or equal to 1.15. According to the composite positive electrode material, the phenomena of enrichment of doping elements on the surface of a single crystal and non-uniform lithiation in the single crystal can be relieved, so that the capacity and the cycling stability of the positive electrode material are improved.

The invention discloses a TBC battery with a locally doped back surface and a preparation method thereof, and belongs to the technical field of solar cells, the TBC battery comprises a substrate with a height difference on the back surface, the substrate is an N-type or P-type silicon substrate, the front surface of the substrate is sequentially provided with a front surface passivation layer and a front surface antireflection layer from inside to outside, the back surface of the substrate is provided with a tunneling oxide layer, and the back surface of the substrate is provided with a back surface passivation layer. A doping layer, a back passivation layer, a back antireflection layer and an electrode are sequentially arranged below the tunneling oxide layer; the doped layer comprises a homotype doped region which is homotype with the substrate and a special-shaped doped region which is special-shaped with the substrate; the same-type doped region and the special-shaped doped region are gapless in the horizontal direction and are distributed in a staggered manner in the vertical direction, and the electrode penetrates through the back passivation layer and the back antireflection layer. The same-type doped regions and the special-shaped doped regions are gapless in the horizontal direction and are staggered in the vertical direction, so that a gap region is prevented from occupying a carrier collection area, the carrier collection efficiency is improved, and the conversion efficiency of the cell is improved.

The invention relates to a reworking method of a heterojunction solar cell. The reworking method comprises the following steps that defective products are pretreated, and dirt on the surfaces of the defective products is removed; forming a P-type doping layer on the surface, with the N-type doping layer, of the pre-treated defective product to obtain an intermediate product; and carrying out film removal treatment on the intermediate product, and removing a film layer on the surface of the intermediate product to obtain the silicon substrate. In the reworking method, the P-type doping layer is formed on the N surface of the defective product, and the P-type doping layer can play a role in protecting the N-type doping layer. In the subsequent film removing treatment, the excessive corrosion of the N surface can be reduced, so that the corrosion degrees of the P surface and the N surface in the film removing process can be close, the risk of excessive corrosion of the silicon substrate can be reduced on the basis of removing a bad film layer, the silicon substrate can be kept at a proper thickness for reutilization, and the reworking yield of the silicon substrate is further improved.

The invention belongs to the technical field of wastewater treatment, and particularly relates to multi-element doped synergistically modified ferrihydrite as well as a preparation method and application thereof, and the ferrihydrite is doped with at least one rare earth element and at least one of an aluminum element and a silicon element; the doping amount of the rare earth elements in the ferrihydrite is 0.5-20wt%; the doping amount of the aluminum element in the ferrihydrite is 0-20wt%; the doping amount of the silicon element in the ferrihydrite is 0-20wt%. Compared with the prior art, the method solves the problems that in ferrihydrite single-element modification in the prior art, although stability is improved through Al / Si doping, element modification in the same period is limited in improvement of the adsorption capacity, and the specific recognition capacity on phosphate radicals cannot be improved; and the anti-interference performance of the rare earth doped in the complex water matrix still needs to be improved. According to the scheme, rare earth and Al / Si doping are combined, so that improvement of phosphorus adsorption stability, adsorption capacity, specific recognition capability and anti-interference performance of ferrihydrite is realized synergistically.

The invention belongs to the technical field of energy materials, and provides a multi-functional-layer lithium manganate positive electrode material and a preparation method thereof and a lithium battery, the multi-functional-layer lithium manganate positive electrode material comprises a core body and a coating layer, the core body sequentially comprises a bulk-phase-doped lithium manganate matrix, an induction doping layer and a modification doping layer from inside to outside, the chemical general formula of the core body is Li < 1 + a > Mn < 2-b-c-d > M R < c > X < d > O < 4-e > Z < e >, bulk phase doping elements of the matrix are M and Z, a crystal face induction element is X, and a modification doping element is R; the coating layer is a compound comprising a coating element M '; a supported crystal face inducer is also adopted for further inhibiting the growth of the crystal face (111) and reducing the area of the crystal face (111) so as to form the positive electrode material of a polyhedral spinel crystal structure comprising at least 26 crystal faces, and the crystal face inducer comprises a phosphorus-containing compound, a boron-containing compound or at least + 5 valence metal salt; the Mn dissolution reaction is reduced, and the electrochemical performance of the lithium manganate is improved.

The invention belongs to the technical field of organic electroluminescent materials, and provides an iridium-containing heterocyclic phosphorescent doping material and an organic electroluminescent device.The doping material has a compound general formula shown in the formula I. Quinoline and a naphthalene ring are connected through silane or germane, and a silicon or germanium six-membered heterocyclic structure is formed. And reacting with iridium metal and a diketone monomer to obtain the iridium metal heterocyclic phosphorescent organic light-emitting material. The heteroatom silicon or germanium in the material can adjust molecular orbital HOMO and LUMO energy levels, and the polarity effect of heteroatoms promotes electron migration, reduces interface potential barriers and electron injection barriers, reduces carrier injection loss and improves carrier mobility, so that driving voltage is reduced, and the external quantum efficiency of a device is improved. In addition, the silicon or germanium heterocyclic ring has better rigidity, so that the overall stability of the structure is enhanced, and the rigid structure can prolong the service life of the device.

The invention discloses a high-stability sodium-ion battery manganese-based composite positive electrode material and a preparation method and application thereof, and belongs to the technical field of sodium-ion battery positive electrode materials. The chemical general formula of the positive electrode material is NaxNiaMnbTicM1-a-b-cO2, x is more than or equal to 0.6 and less than 0.8, a is more than or equal to 0 and less than 0.5, b is more than or equal to 0.3 and less than 0.8, c is more than or equal to 0 and less than 0.3, and M is any one or a combination of more of Li, Mg, Cu, Al, Ca or Zn. Spherical-structure precursor particles with uniform components can be obtained through a coprecipitation method, element replacement and doping are carried out through solid-phase sintering, the structural proportion is designed in a customized mode, and then the positive electrode material is obtained. The manganese-based positive electrode material prepared by the invention has a P2 / O3 composite layered structure, is smooth in surface appearance and uniform in size, has very good structural stability in a wide voltage range of 2.2-4.3 V, and shows excellent rate and long cycle stability.

The invention relates to a sodium electrode layered oxide and a preparation method and application thereof. The sodium electrode layered oxide comprises a positive electrode material and a coating layer on the particle surface of the positive electrode material, the coating layer comprises perovskite and sodium metaaluminate. The sodium electrode layered oxide provided by the invention has a uniform composite coating layer comprising perovskite and sodium metaaluminate, and by combining interface gradient doping, the cycling stability of a positive electrode material under high voltage can be remarkably improved.

The invention relates to a P-type GaN LED epitaxial structure based on segmented annealing and compensation doping and a preparation method thereof, and belongs to the technical field of nitride semiconductor epitaxial growth and doping activation. The epitaxial structure sequentially comprises a buffer layer, a non-doped GaN layer, an N-type GaN layer, a multi-quantum well active layer, a P-type AlGaN electron barrier layer, a P-type GaN layer and an MgN compensation layer which are arranged on the substrate layer; wherein the MgN compensation layer is a high-concentration magnesium-doped nitride semiconductor layer, is arranged on the P-type GaN layer, and is used for compensating Mg loss and inhibiting nitrogen vacancy formation in the subsequent annealing process. The preparation method comprises the steps of performing multi-stage annealing treatment on the P-type GaN layer, performing epitaxial growth and annealing on the compensation layer, and finally performing low-temperature post-treatment annealing to form a surface passivation region. According to the structure, the Mg activation efficiency and the hole concentration are remarkably improved through an in-vivo activation and surface compensation synergistic mechanism, the contact resistance is reduced, the conductivity and the light-emitting performance of an LED device are improved, and the structure has excellent implementability and industrialization prospects.

The invention discloses a thermal-decay-resistant red light Micro LED epitaxial structure and a preparation method thereof. The epitaxial structure sequentially comprises a substrate layer, an n-type buffer layer, an n-type etching barrier layer, an n-type ohmic contact layer, an n-type limiting layer, a quantum well structure, a p-type spacer layer, a p-type electron barrier layer and a p-type ohmic contact layer from bottom to top. Wherein the quantum well structure is formed by alternating 1-5 pairs of InGaP well layers and three-section type p-type AlGaInP barrier layers, and the three sections of barrier layers adopt gradient energy level design and are all subjected to p-type doping; according to the invention, the problems of carrier loss and low recombination efficiency at high temperature in the prior art are solved by blocking electron overflow through the gradient energy level barrier and supplementing the hole concentration through p-type doping, so that the 85 DEG C external quantum efficiency attenuation rate is less than or equal to 10%, the service life is prolonged to more than 50,000 hours, and the process is compatible with mass production and is suitable for the fields of display, illumination and the like.

The invention discloses an LTO film thickness uniformity optimization method through an APCVD method, and particularly relates to the technical field of semiconductor manufacturing, and the method comprises the following steps: S1, prefabricating a silicon wafer; s2, selecting a tungsten filament ring; s3, installing a tungsten filament ring; s4, depositing an LTO thin film; s5, measuring the thickness of the LTO thin film of the silicon wafer; and S6, confirming the service life of the tungsten filament ring. According to the LTO film thickness uniformity optimization method through the APCVD method, the silicon wafer is chamfered, stress concentration and dislocation are reduced, wafer edge breakage and inward movement of thermal stress defects are effectively prevented, a more stable substrate is provided for follow-up film deposition, a tungsten filament ring of a specific specification is selected and correctly installed, and the uniformity of the thickness of the LTO film is improved. The diffusion and transmission conditions of gas in the APCVD process can be improved, the problems of stacking faults, crystal points, self-doping and the like after epitaxy caused by non-uniform films are reduced, and the consistency and reliability of device performance are improved.

The invention provides an epitaxial wafer of a high-luminous-efficiency infrared light-emitting diode and a manufacturing method of the epitaxial wafer. The epitaxial wafer comprises a GaAs substrate, an N-type semiconductor structure, a quantum well active region and a P-type semiconductor structure, wherein the N-type semiconductor structure, the quantum well active region and the P-type semiconductor structure are formed on the substrate. The N-type semiconductor structure comprises an N-type AlGaAs stacking layer, diethyl tellurium (DETe) and disilane (Si2H6) are adopted for co-doping, the N-type semiconductor structure is designed to be of a superlattice structure, and the doping concentration in the vertical direction is periodically alternated from high to low; and a doping concentration gradient is arranged at a position close to the quantum well region, so that the tellurium doping concentration is gradually increased. Through the design, the content of carbon impurities in the material and the non-radiative recombination probability are reduced, a better current expansion effect and quantum well stress release are achieved, and the luminous efficiency and performance of an infrared LED are greatly improved.

The invention relates to a 3 [mu] m SOI process integration method for an on-chip beam forming and wavelength division multiplexing system. The method comprises the steps of silicon waveguide etching, PN ion implantation, germanium-silicon epitaxy, germanium-silicon waveguide etching, metal layer growth and the like. In order to solve the problem that the silicon PN doping annealing temperature is higher than the germanium-silicon PN doping annealing temperature, the germanium-silicon epitaxial etching postposition technological process is developed, and the non-selective epitaxy and reverse etching modes are used, so that the problem that a wafer is uneven after silicon etching doping is solved. The method has extremely high application value in large-scale silicon photon integration application, and can be used for manufacturing complex active photon chips integrated with modulators, detectors and the like.

The invention relates to the technical field of photovoltaic modules, in particular to a back contact battery piece, a preparation method thereof and a photovoltaic module. The back contact battery piece comprises a silicon substrate, and the back face of the silicon substrate comprises a first area, a second area and an overlapping area located between the first area and the second area. The first region includes a first sub-region and a second sub-region. Wherein the first sub-region is provided with a first doped laminated layer, the second sub-region and the overlapping region are provided with a second doped laminated layer, and the thickness of the first doped laminated layer is greater than that of the second doped laminated layer along the thickness direction of the back contact cell. The doping concentration of the first doping lamination layer is greater than the doping concentration of the second doping lamination layer. According to the back contact battery piece, by arranging the second doping lamination layer which is relatively thin in thickness and relatively low in doping concentration in the overlapping region, the transverse diffusion range in the second doping lamination layer can be controlled, the second doping lamination layer is prevented from extending to generate excessive contact with other structural layers, so that the electric leakage risk of the back contact battery piece is effectively reduced, and the use safety of the back contact battery piece is improved.

The invention discloses a threshold voltage adjusting method and a manufacturing method of a semiconductor device and the semiconductor device, and relates to the technical field of semiconductor manufacturing. The threshold voltage adjusting method of the semiconductor device comprises the following steps: providing an MOS substrate, wherein the MOS substrate comprises a first MOS region and a second MOS region; pocket doping ion implantation is carried out on the first MOS region and the second MOS region, and pocket doping regions are respectively formed; thermal diffusion is carried out on the MOS substrate, so that the diffusion degree of pocket doping ions in the second MOS region is smaller than that of pocket doping ions in the first MOS region, and the threshold voltage of the second MOS region is higher than that of the first MOS region. According to the adjusting method, the threshold voltage does not need to be changed in a mode of combining homotype doping and heterotype doping, and the threshold voltage of different MOS regions can be adjusted. According to the manufacturing method, the number of used photomasks can be reduced.

The invention relates to the technical field of new materials, and provides a surface-coated and doped lithium-rich manganese-based positive electrode material as well as a preparation method and application of the surface-coated and doped lithium-rich manganese-based positive electrode material. The doping layer is positioned on the surface of the internal layered structure; the chemical formula of the doping layer is Li Ni Co < c > Mn < d > Ti < e > M < f > G O < 2 >; the coating layer is positioned on the surface of the doping layer; the chemical formula of the coating layer is LigRhTiiVjOk; wherein M is selected from one or a combination of more than two of Al, Mg, Ti and La, and f is more than or equal to 0 and less than or equal to 0.05; g is selected from one or two of S and P, and p is more than 0 and less than or equal to 0.05; r is selected from one or a combination of more than two of Al, Mg, Ti and La, and h is more than or equal to 0 and less than or equal to 3; v is selected from one or two of S and P, and j is greater than or equal to 1 and less than or equal to 4. The stability of the obtained lithium-rich manganese-based positive electrode material can be remarkably improved, and the high-temperature cycling stability of the lithium ion battery is effectively improved.

The invention discloses a preparation method of a doped and modified silicon-based negative electrode material, and aims to solve the problems of poor cycle performance and the like caused by large volume expansion and poor conductivity of the existing silicon-based negative electrode material. The method comprises the following steps: mixing nano silicon powder with a transition metal and alkaline earth metal composite doping source and a carbon source in a specific ratio, carrying out differential ball milling treatment twice, carrying out a gradient calcination process, and finally carrying out carbon nanotube coating in a fluidized bed by utilizing a chemical vapor deposition method. According to the invention, a conductive-buffer dual-function network is constructed through dual-metal synergistic doping, and a gradient heat treatment process is combined to optimize the crystallinity and pore structure of the material, so that the first coulombic efficiency of the prepared negative electrode material reaches 87% or more, the volume expansion rate is reduced to 150%, and the capacity retention rate exceeds 92% after 100 cycles; and the electrochemical performance and the structural stability of the silicon-based negative electrode material are remarkably improved.

The invention discloses a lithium-rich manganese-based positive electrode material with a fast ion conductor coating layer and bulk phase doping and a preparation method of the lithium-rich manganese-based positive electrode material, the surface of the lithium-rich manganese-based positive electrode material is coated with the coating layer composed of amorphous Li3PO4, the interior of the bulk phase is doped with other elements, the structural formula of the lithium-rich manganese-based positive electrode material is Li < 1 + a > Mn M < c > O < 2 >, m is one or more than one of Ni, Co, A1, Cr, Fe, Mg and Ce, 0 lt; a is less than or equal to 0.2, 0lt; b < = 1, 0lt; c < = 1, and a + b + c = 1. The method comprises the following steps: (1) fully mixing a lithium-rich manganese-based positive electrode material precursor, a certain proportion of lithium salt and a proper amount of phosphate; and (2) sintering the uniformly mixed sample in a certain atmosphere to obtain the lithium-rich manganese-based positive electrode material with the fast ion conductor coating layer and the bulk phase doping structure. The first coulombic efficiency of the lithium-rich positive electrode material is improved, the cycling stability and the rate capability of the lithium-rich positive electrode material are improved, and the requirements of a power battery can be met.

The invention discloses a carbon-nitrogen co-coated lithium manganese iron phosphate positive electrode material and a preparation method and application thereof.The preparation method comprises the steps that the pH of a reaction system is adjusted through ammonia water, a precipitation environment is provided, the nucleation speed of crystals is controlled, MnaFe1-aPO4 precursors with different Mn: Fe molar ratios are produced, then the MnaFe1-aPO4 precursors are mixed with a lithium source and doped element oxide, and the carbon-nitrogen co-coated lithium manganese iron phosphate positive electrode material is obtained; and adding a certain amount of carbon and nitrogen sources, mixing with water to form a suspension, grinding, drying, and carrying out carbon thermal reduction in an inert gas atmosphere to obtain the carbon and nitrogen coated lithium manganese iron phosphate positive electrode material. The compaction density of the material is improved through element doping, the conductivity of the material is improved through carbon-nitrogen co-coating, and the stability of the surface structure of the lithium iron manganese phosphate material is enhanced, so that the rate capability of the lithium iron manganese phosphate positive electrode material is further improved, and the cycle life of the lithium iron manganese phosphate positive electrode material is further prolonged. The method disclosed by the invention is simple, feasible and relatively low in cost, and the obtained positive electrode material has excellent performance in the aspect of battery performance and has a wide application prospect.

The invention discloses an AlGaInP red light LED chip structure with a polarization-induced tunnel junction and a preparation method thereof. The chip structure sequentially comprises a GaAs substrate, an n-type GaAs buffer layer, an n-type etching barrier layer, an n-type GaAs ohmic contact layer, an n-type limiting layer, a non-doped InGaP / quantum well structure, a p-type spacer layer, a p-type AlGaInP polarization-induced doping layer, an insertion layer and an n-type ohmic contact layer from bottom to top. Wherein the p-type AlGaInP polarization induction doping layer introduces a piezoelectric polarization electric field through an Al component gradual change design, high-density two-dimensional hole gas is formed through induction, and the high-Al component insertion layer and the n-type ohmic contact layer form a tunnel junction; according to the invention, the problems of low p-type doping efficiency and high resistivity of the AlGaInP material with high Al component are fundamentally solved, the epitaxial structure and the chip process are simplified, the series resistance of the chip is reduced, the luminous efficiency is improved, the yield is improved, and the method has remarkable technical and commercial values.

The invention relates to an epitaxial layer manufacturing method, an epitaxial layer and a super junction power device with an enlarged process window. The method comprises the following steps: providing an N-type substrate with high doping concentration, growing an N-type semiconductor with low doping concentration, and forming a first epitaxial layer; growing an N-type semiconductor on the first plane to form a second epitaxial layer; forming a first barrier layer on the front surface of the wafer; etching the front surface of the wafer to form a plurality of first trapezoidal grooves; growing an N-type semiconductor on the front surface of the wafer, filling the first trapezoidal groove, and forming an N-type column of the super junction power device by the N-type semiconductor in the first trapezoidal groove; forming a second barrier layer on the front surface of the wafer; etching the front surface of the wafer to form a plurality of second trapezoidal grooves; and growing a P-type semiconductor on the front surface of the wafer, filling the second trapezoidal groove, and forming a P-type column of the super junction power device by the P-type semiconductor in the second trapezoidal groove. According to the invention, the problem of error amplification of a grooving filling process is solved.

The invention discloses a semiconductor device and a use method, the semiconductor device comprises a substrate, a storage function area and a control function area, and the substrate comprises a substrate, a buffer layer, a channel layer and a barrier layer which are stacked in sequence; the storage function region is arranged on one side, away from the substrate, of the barrier layer, the storage function region comprises a source electrode, a grid control electrode and a drain electrode which are arranged at intervals in the first direction, and the grid control electrode comprises a first cap layer, a first ohmic electrode and a grid electrode which are stacked in the thickness direction of the substrate; the first cap layer and the barrier layer are arranged in a contact mode, the first cap layer is acceptor type doping, and the first ohmic electrode and the grid electrode are arranged in an insulated mode; the control function area is arranged on the side, away from the substrate, of the barrier layer and comprises a first electrode and a second electrode which are arranged at intervals in the first direction, the first electrode is electrically connected with the source electrode, and the second electrode is electrically connected with the first ohmic electrode.

The invention belongs to the technical field of electrochemistry, and particularly provides a lanthanum-cerium double-doped sodium ferric sulfate positive electrode material and a preparation method thereof. The material is composed of a matrix and a carbon coating layer coating the matrix, the matrix has a chemical expression of Na6Fe4-x-yLaxCey (SO4) 7, x is greater than or equal to 0.01 and less than or equal to 0.1, and y is greater than or equal to 0.01 and less than or equal to 0.1. The material is prepared through spray drying and high-temperature sintering treatment in sequence, the particle morphology is regular, and the particle size distribution is uniform; the electronic conductivity and Na < + > diffusion rate of the material are remarkably improved by rare earth doping, so that the material has more excellent low-temperature cycle performance, sodium storage performance and the like.