153 results about "PIN diode" patented technology

The invention relates to the technical field of antennas, and discloses a reconfigurable transflective array antenna applied to non-line-of-sight microwave propagation, which comprises a control circuit, and a first polarization grid layer, a first dielectric layer, M * N resonant sheets, a second dielectric layer and a second polarization grid layer which are sequentially arranged, the resonance piece comprises a radiation part, a grounding wire, four extension parts and two PIN diodes, the four extension parts are symmetrically arranged on the periphery of the radiation part and are connected with the radiation part, and the two PIN diodes are respectively arranged on two adjacent extension parts and are respectively connected with the upper polarization grid layer and the lower polarization grid layer through bending wires on the extension parts and metal columns in the dielectric layer; one end of the grounding wire is connected with the radiation part, and the other end is connected with direct-current ground; and the control circuit controls the connection and disconnection of the PIN diode through the polarization gate layer to realize a transmission mode or a reflection mode. The reconfigurable transflective array antenna applied to non-line-of-sight microwave propagation is relatively simple in structure, and loss can be reduced.

The invention discloses a simulation method and system for improving the simulation efficiency of a PIN diode, and belongs to the technical field of semiconductor device simulation, and the method comprises the steps: firstly, employing a hash table data structure to optimize the preprocessing process of a semiconductor physical model time domain numerical method, and remarkably improving the parameter preprocessing efficiency; carrying out bandwidth compression optimization on the sparse matrix in combination with an inverse Cuthill-Mckee matrix reordering algorithm; and secondly, constructing a parallel iteration solver architecture to realize efficient distributed solution of a large nonlinear matrix equation. Through cooperative application of the method, the overall calculation efficiency of a PIN diode numerical simulation program is improved by more than three times compared with that of traditional commercial simulation software COMSOL on the premise that the calculation precision is kept, the industrial problem that the simulation timeliness of a semiconductor device is limited is effectively solved, and an innovative technical path is provided for high-precision real-time simulation. The method has important application value in the fields of power device design, integrated circuit simulation and the like.

The invention provides a 1bit circular polarization reconfigurable transmission unit, which belongs to the field of low orbit satellite communication and comprises a radiation patch, a first dielectric substrate, a grounding plate, a second dielectric substrate, a biasing circuit, a third dielectric substrate and a receiving patch which are sequentially arranged from top to bottom, a single side of the radiation patch is slotted and is connected to a first capacitor disc in the center of the grounding plate through a metalized through hole in the center of the first dielectric substrate, an internal patch of the receiving patch is connected to a second capacitor disc through a metalized through hole in the center of the third dielectric substrate, and the second capacitor disc is located on the third dielectric substrate and is connected to the biasing circuit. The external patch of the receiving patch is connected to the biasing circuit through a metalized through hole, and the internal patch and the external patch are bridged through two PIN diodes with the same orientation; the invention further provides an array antenna. Metallized via holes are replaced by capacitor disc coupling, complexity and cost are greatly reduced, structural symmetry is broken through single-side slotting of the radiation patches, conversion efficiency of linearly polarized waves is improved during array forming, and circular polarization performance is improved.

The invention belongs to the technical field of electromagnetic wave-absorbing materials, and particularly relates to a zero-power absorption type adjustable metasurface composite material and a preparation method thereof. Comprising a panel, a square-ring-shaped metal layer, a cross-shaped metal layer, an electric control metamaterial, a resistive film and a reflecting back plate from top to bottom in sequence, a core layer is arranged among the square metal layer, the cross curve metal layer, the electric control metamaterial, the resistive film and the reflecting back plate; the electric control metamaterial comprises second structure units which are periodically arranged along x and y directions and contain PIN diodes, and the PIN diodes are embedded into the structure; the cross curve metal layer and the square metal layer respectively comprise a third structure unit and a fourth structure unit which are periodically arranged along the x direction and the y direction. Through a cascade structure formed by the electric control metamaterial, the cross-shaped metal layer and the square ring-shaped metal layer, when the PIN diode is switched off, the wave absorbing state is presented, when the PIN diode is switched on, the reflecting state is presented, and electromagnetic waves are absorbed under the condition that bias voltage is not applied.

The invention provides a leaky-wave antenna and a frequency-modulated continuous wave generation method based on the leaky-wave antenna, and relates to the field of millimeter-wave radar, and the method comprises the steps: constructing a space-time coding matrix, configuring a radiation unit state regulation and control beam direction in a space domain, modulating a radiation unit state switching rule in a time domain to generate a frequency-modulated continuous wave, and achieving space-time dual-domain regulation and control. And frequency-modulated continuous waves with controllable bandwidth are generated. The space-time coding leaky-wave antenna is formed by alternately arranging 1-bit radiation units in an upper row and a lower row, switching of radiation / non-radiation states is achieved by loading a synchronous bias PIN diode across an annular gap, a space-time coding matrix is constructed, the states of the radiation units are configured in a space domain to regulate and control the wave beam direction, and the space-time coding leaky-wave antenna is formed. Modulating the switching rule of the radiation unit in a time domain, and generating a frequency-modulated continuous wave; the radiation efficiency is improved by the alternative arrangement of the radiation units, the control difficulty and the hardware cost are reduced, multiple functions are integrated into a single device, and the problem of low integration level of the traditional separation architecture is solved.

The invention discloses a dual-band dual-linear polarization reconfigurable folding transmission-reflection array antenna, which comprises an upper-layer metasurface, a lower-layer metasurface and a feed source antenna, the upper-layer metasurface is provided with 12 * 12 first unit structures, and each first unit structure comprises a first metasurface metal patch, a first dielectric substrate, a second metasurface metal patch, a second dielectric substrate and a third metasurface metal patch which are connected from top to bottom; the lower-layer metasurface is provided with 12 * 12 second unit structures, and each second unit structure comprises an annular gap metal patch, a third dielectric substrate and a bottom-layer feeder line which are connected from top to bottom; two PIN diodes are integrated in an annular gap of the annular gap metal patch, and the annular gap metal patch is connected with a bottom feeder line located on the upper surface of the third dielectric substrate through a feed probe; and a 2 * 2 unit size is reserved in the center of the lower-layer metasurface and is used for placing a feed source antenna. According to the invention, dual-frequency dual-linear polarization bidirectional wave beam scanning is realized, and the low-profile characteristic is realized.

The invention relates to a dual-polarization 2bit transmission type metasurface unit working in a Ka wave band, which can realize four-state phase regulation and control of horizontal polarization and vertical polarization on a specified frequency band. And an implementation scheme with a better system integration advantage is provided for the high-frequency multi-polarization reconfigurable antenna system. The unit is composed of two groups of linearly polarized 2bit reconfigurable units which are orthogonally arranged, and each unit is composed of a pair of active receiving antennas at the bottom and a pair of active transmitting antennas at the top; a pair of PIN diodes are respectively integrated in a receiving antenna and a transmitting antenna, and four discrete phase states are realized through combination of switch states, so that 2-bit phase regulation and control are completed. The invention has the following advantages: 1, low transmission amplitude loss and precise phase gradient characteristic are shown in the dual-polarization Ka wave band, and high-precision wave beam regulation and control can be realized; 2, due to the fact that dual-line polarization adopts a synchronous regulation and control mode, the unit can complete phase control only through two feeder lines, and compared with an independent polarization control scheme, the complexity of a feed and bias network is remarkably reduced, so that interference of a bias circuit on electromagnetic radiation characteristics is effectively reduced; and 3, the emergent wave beam of the transmission type metasurface is located on the same side with the transmission type metasurface, so that the shielding of the feed source can be reduced, the interference of a reflection path is avoided, the aperture efficiency is improved, and the sidelobe is reduced.

The application relates to a reconfigurable metasurface for electrically-controlled scanning of a real-aperture microwave radiometer, which comprises a plurality of array-distributed basic units, the basic unit comprising a top metal patch, a first dielectric layer, a metal reflection layer, a second dielectric layer and a bottom metal layer which are sequentially stacked from top to bottom; the top metal patch comprises two cross-connected I-shaped patches and a triangular metal branch located in the cross region and having a certain gap with the I-shaped patch; the I-shaped patch comprises a straight arm and end arms located at both ends of the straight arm and having a certain gap with the straight arm; a PIN diode is connected between the straight arm and the end arms; the end arms are connected with each other through a metal feed line, and an isolation resistor is arranged on the metal feed line; the application dynamically controls the reflection phase according to the working state of the diode combination, and has high reflectivity and reflection bandwidth and small loss.

This invention relates to the field of power transformer protection technology, and discloses a transformer DC bias suppression system and method. The method includes collecting subway operation, power grid structure, and soil geological parameters; establishing a dynamic calculation model based on these parameters to generate distribution data of rail potential, stray current, and ground potential; constructing a bias assessment model to calculate the dynamic DC current flowing through the transformer neutral point and the excitation current distortion; using a random forest algorithm for evaluation, outputting a quantitative impact level and a set of key factors; and based on this level, key factors, and transformer grounding method, formulating a suppression strategy that includes configuration parameters of a silicon carbide PiN diode active suppression device and a grounding optimization scheme. This invention achieves accurate assessment and targeted suppression of DC bias problems caused by subways.

This application discloses a light sensor and a related time-of-flight distance measuring system. The light sensor includes a semiconductor substrate, having a first surface and a second surface; a photodiode, disposed in the semiconductor substrate and adjacent to the first surface, wherein the photodiode is configured to sense light to generate charges; a first floating diffusion region, disposed in the semiconductor substrate and adjacent to the first surface, and configured to collect charges during a sampling operation; a gate, disposed on the semiconductor substrate, and configured to selectively control the charges to enter the first floating diffusion region; and PIN diode, disposed on the photodiode, wherein the PIN diode at least partially overlaps with the photodiode, when viewed from a top view.

The invention relates to an LTCC (Low Temperature Co-Fired Ceramic)-based switch type band-pass filter. The filter comprises a multi-layer LTCC substrate, a resonator, a switching circuit and a control circuit are packaged into a whole through a three-dimensional integration technology, and the multi-layer LTCC substrate is formed by vertically stacking and sintering a plurality of layers of ceramic green sheets; the number of the resonators is at least two, the adjacent resonators realize electromagnetic coupling through a rectangular coupling window, and the tail ends of the resonators are connected to a bottom layer grounding plane through metalized through holes; the switching circuit comprises a plurality of PIN diodes, the diodes are embedded between the fourth layer and the fifth layer of the LTCC by flip-chip bonding, the anodes are connected with the control line through through holes, and the cathodes are directly grounded; the control circuit comprises a coplanar waveguide and a high-frequency choking coil, and the coplanar waveguide is connected with the high-frequency choking coil in series. The switch and the filter are integrally packaged, and the size is smaller than 5 mm * 3 mm * 1 mm; the switching state insertion loss is less than or equal to 2dB, and the turn-off isolation is greater than or equal to 30dB; lTCC packaging is resistant to high temperature and vibration, and is suitable for severe environments.

The application provides a multi-bit semiconductor memory unit, a memory array and an operating method thereof, wherein the multi-bit semiconductor memory unit comprises a pinned diode, a control transistor and a floating diffusion region, and the pinned diode is used for storing charges; wherein the pinned diode is composed of an N-well region and a P-type surface doping region of a photodiode, or composed of a P-well region and an N-type surface doping region of a photodiode. In the application, the N-well region of the photodiode or the P-well region of the photodiode is used as a storage charge unit. In the multi-bit semiconductor memory unit provided by the application, the amount of charges that can be stored by the storage unit is determined by the amount of dopants, and therefore the storage amount is controllable.

The application provides a preparation method of a PIN limiter based on a silicon-based PIN diode and the PIN limiter, and the method comprises the following steps: preparing a multistage PN junction on a silicon wafer substrate to obtain an N+ layer, a plurality of P+ layers and a plurality of I layer regions; preparing an upper electrode on the upper surface of each P+ layer; preparing a lower electrode on the lower surface of the N+ layer; preparing a first passivation layer on the upper surface of the N+ layer; etching a plurality of grooves to the N+ layer on the upper surface of the first passivation layer to prepare a plurality of ground pads based on the plurality of grooves; preparing an insulating dielectric layer on the upper surface of the first passivation layer; performing windowing on the upper surface of the insulating dielectric layer to form a plurality of openings; preparing a preset peripheral circuit on the upper surface of the insulating dielectric layer; and performing gold plating treatment in the plurality of openings to electrically connect the plurality of upper electrodes and the plurality of ground pads with the preset peripheral circuit. The single-chip preparation method is adopted, so that the prepared PIN limiter based on the silicon-based PIN diode is small in size and high in integration.

The invention relates to the technical field of radio frequency devices, in particular to an amplitude limiter circuit structure integrated with a filtering function by a gallium arsenide process, and the circuit sequentially comprises a 50-ohm microstrip input matching section, a first-stage amplitude limiting filtering unit, a second-stage amplitude limiting filtering unit and an output matching section along a main transmission line, in the first stage, three forward PIN diodes and three reverse PIN diodes are stacked and connected to a main circuit in parallel, high power tolerance and symmetrical amplitude limiting capacity are achieved, and two low-frequency transmission zero points are formed by fusing a micro-strip grounding branch knot and an MIM capacitor resonator; in the second stage, two anti-parallel PIN diodes are matched with a grounding inductor to form a third transmission zero point, three groups of resonant structures are integrated, six transmission zero points are introduced, the filtering performance in a 12-18GHz frequency band is remarkably enhanced, a PIN diode parasitic capacitor and a microstrip inductive structure are skillfully utilized by the circuit to cooperatively realize filtering, extra passive elements are not needed, and the cost is low. The method is suitable for integrated protection of sensitive devices in a high-frequency radar and communication system.

The invention relates to a broadband lightweight easy-to-deploy 1-bit programmable metasurface unit working in a P wave band. The unit comprises a programmable metasurface assembly; the programmable metasurface assembly comprises a phase regulation and control structure, a supporting structure and a reflection structure. The phase regulation and control structure comprises a reflection patch, an upper dielectric substrate, a bias circuit, a metal via hole structure and a PIN diode. The reflecting patch and the biasing circuit are conducted based on a metal via hole structure; linear segmentation grooves are distributed in the center of the reflection patch in the direction perpendicular to the electric field. The PIN diode is loaded to the reflection patch and is located at the central position of the linear segmentation groove; and the bias circuit is used for isolating an alternating current signal and providing bias voltage, and adjusting the on-off state of the PIN diode based on the bias voltage to realize 0-degree and 180-degree reflection phase regulation and control. According to the scheme, a large number of electronic phase shifters or T / R assemblies do not need to be used, the cost is lower, and the performance is better.

The application discloses a low-profile slot type frequency reconfigurable antenna, comprising: a full-metal reflection baffle, an upper layer dielectric substrate and a lower layer dielectric substrate arranged in sequence; the full-metal reflection baffle is located on one side of the upper surface of the upper layer dielectric substrate; the upper surface of the upper layer dielectric substrate is provided with a first metal patch and a second metal patch; the upper surface of the lower layer dielectric substrate is printed with a feeding structure, and the lower surface is printed with two metal ground plates; the two metal ground plates are respectively provided with grooves, two groups of PIN diodes connected with the two grooves are arranged in the grooves, the conduction directions of the two groups of PIN diodes are opposite, and the two metal ground plates are electrically connected with an external single-chip microcomputer through a direct-current feeding line structure. In the application, the PIN diode is used as an electric control element, the response speed is improved, one group of voltages can be used to control the working state of the antenna through the two groups of PIN diodes placed in opposite directions, the complexity of the structure is reduced, the complexity of the control system is reduced, and the cost of the antenna is reduced.

The invention discloses a radiation and reflection integrated electromagnetic metasurface unit and an array thereof. The metasurface unit comprises a first dielectric substrate, a second dielectric substrate and a base structure formed by a PP layer located between the first dielectric substrate and the second dielectric substrate. A first metal layer is arranged on the upper surface of the first dielectric substrate, a metal floor layer is arranged between the first dielectric substrate and the PP layer, a second metal layer is arranged between the PP layer and the second dielectric substrate, and a third metal layer is arranged on the lower surface of the second dielectric substrate; by controlling the level of the direct-current bias line, the on-off state of the third PIN diode is further controlled to change the impedance matching state of the microstrip line and the gap, switching of the radiation reflection mode of the unit is achieved, and 2-bit reflection phase control is achieved in the reflection mode. The array comprises radiation and reflection integrated electromagnetic metasurface units which are arranged in an array mode, and each electromagnetic metasurface unit in the array can perform radiation and reflection mode switching by controlling the level of a corresponding direct current bias line so as to realize flexible regulation and control of electromagnetic waves; and the electromagnetic wave control capability can be well realized at 3.5 GHz, and the reflection efficiency is high.

This invention discloses a dual-substrate circularly polarized reconfigurable omnidirectional antenna based on PIN diode control. The antenna comprises a first substrate and a second substrate. The second substrate has a ground plane printed on it, and the first substrate has a radiating patch printed on it. The radiating patch includes a central square patch, a Γ-shaped stub, a loop antenna, PIN diodes, and via shorting posts. Seamless switching between left-hand and right-hand circular polarization is achieved through the on / off combinations of 16 PIN diodes, with a simple switching logic. High polarization purity is achieved in both polarization modes, and the via shorting posts effectively reduce mutual interference between modes, resulting in strong switching reliability. In both circular polarization modes, the relative impedance bandwidth and axial ratio bandwidth are wide. In the left-hand circular polarization mode, the relative impedance bandwidth reaches 19.38%, covering 2.33-2.83GHz with |S11|<-10dB, and the axial ratio bandwidth reaches 26.3%, covering 2.08-2.71GHz with AR<3dB. In the right-hand circular polarization mode, the relative impedance bandwidth reaches 19.8%, covering 2.32-2.83GHz with |S11|<-10dB, and the axial ratio bandwidth reaches 23.43%, covering 2.11-2.67GHz with AR<3dB, which is significantly better than existing narrowband designs of the same type.

The invention relates to a heat dissipation structure of a high-voltage-resistant high-power chip PIN diode, which comprises a heat sink, a first PCB dielectric substrate which is arranged upwards, a first copper cushion block which is arranged upwards on the first PCB dielectric substrate, a diamond copper substrate which is arranged upwards on an aluminum nitride ceramic substrate, and a gasket and a PIN diode chip which are respectively arranged upwards on the diamond copper substrate, the gasket is in bonding connection with the first copper cushion block through a first gold wire; the second PCB dielectric substrate is upwards provided with a second copper cushion block, and the PIN diode chip is in bonding connection with the second copper cushion block through a second gold wire. The microwave module is small in size, small in height space requirement and capable of being popularized and used in a conventional microwave module, the large-power chip in a PIN diode flat packaging mode is selected, the size is small, the chip is thin and low in cost, the size can be made to be as small as possible under the condition that the heat dissipation requirement is met, the needed height space is small, and the microwave module can be popularized and used in the microwave module; and the situation that the heat dissipation structure is enlarged and cannot be applied to microwave modules with smaller and smaller volume requirements is avoided.

The application belongs to the microwave and millimeter wave technology and particularly relates to a substrate integrated waveguide electrically tunable concave type equalizer based on a varactor diode and a PIN diode, which comprises an SIW body, a gradually changing transition line and a 50Ω microstrip line. A rectangular area is arranged on the SIW body, four edges of the rectangular area adopt a groove structure, a plurality of resonance units are arranged on the grooves along two opposite long edges of the rectangular area at equal intervals, and capacitors are arranged on the grooves along two opposite wide edges of the rectangular area at equal intervals, so that the insertion loss at different frequencies is compensated to different degrees to realize the equalization effect. In the resonance unit, two chip capacitors introduced in the first adjusting structure cooperate with gold wires or inductors to realize the direct current blocking and alternating, PIN diodes introduced in the second adjusting structure replace microwave resistors to control the depth of the concave pits, and a reverse direct current voltage is applied to the varactor diode in the third adjusting structure to change the capacitance value of the varactor diode, so that the frequency of the concave pits is changed.

A PIN diode electrically controlled attenuation circuit comprises a radio frequency main link and a direct current bias circuit, the positive electrode of a PIN diode D1 is connected with the negative electrode of a PIN diode D2 through a microstrip circuit 1, and the negative electrode of the PIN diode D1 is connected with one end of a capacitor C1; the positive electrode of the PIN diode D4 is connected with the negative electrode of the PIN diode D3 through the microstrip circuit 4, and the negative electrode of the PIN diode D4 is connected with one end of the capacitor C2; the positive electrode of the PIN diode D2 is connected with one end of the microstrip circuit 2, the positive electrode of the PIN diode D3 is connected with one end of the microstrip circuit 3, and the other end of the microstrip circuit 2 is connected with the other end of the microstrip circuit 3; a driving current Ic is connected with one end of a capacitor C3 and one end of a resistor R6, the other end of the resistor R6 is connected with one end of an inductor L4, the other end of the inductor L4 is connected to one end of an inductor L3 and one end of a capacitor C4, the other end of the capacitor C3 and the other end of the capacitor C4 are respectively grounded, the other end of the inductor L3 is connected with one end of a resistor R5, and the other end of the resistor R5 is connected with the other end of the microstrip circuit 2 and the other end of the microstrip circuit 3. The circuit is simple, the attenuation dynamic range is enlarged, and attenuation stability is improved.

The invention belongs to the field of antennas, and relates to an electromagnetic protection type low RCS metasurface antenna and a working method thereof, and the metasurface antenna comprises an upper dielectric substrate, a gap metal ground, a lower dielectric substrate and a feed microstrip line. A polarization conversion metasurface unit is etched on the upper dielectric substrate; among the four polarization conversion metasurface units of the gap structure of the gap metal ground, two polarization conversion metasurface units located on one side of the feed microstrip line are connected through a PIN diode, and two polarization conversion metasurface units located on the other side of the feed microstrip line are connected through a PIN diode. According to the invention, a low radar cross section, normal communication and high-power microwave self-protection function are integrated, and through cooperation of the polarization conversion metasurface unit and the PIN diode, self-adaptive reliable switching between a normal state stealth communication state and an instant destroy-resistant protection state is realized. The problem that an existing low-RCS metasurface antenna lacks protection capability under the HPM threat is solved.

The invention discloses a planar embedded feed design method for a reconfigurable frequency selective surface. A feed network has no metalized via holes, and adopts a planar feed mode; the unit structure is a band-pass frequency selective surface structure which is formed by a plurality of metal patches, gaps and metal patches and is etched on a dielectric substrate, and PIN diodes are loaded at gap joints. The conduction and cut-off of the PIN diode are realized by applying bias voltage, so that the switching between a wave transmission state and a cut-off state is realized; a planar embedded feed network is introduced, a patch is slotted to add a bonding pad, all middle metal patches are connected together through a method of bridging an inductor on the bonding pad, the inductor is located right above a metal thin wire and is not in electric contact with a peripheral metal square ring, direct-current connection of all internal metal patches is achieved, and unified feed is facilitated. According to the planar embedded feed design method, the structure is simple, the thickness is small, the structure is light, and great engineering application value is achieved.

The invention provides a polarized wave independent control active frequency selection surface loaded with PIN diodes, which comprises a dielectric substrate, periodically arranged strip-shaped metal patches are arranged on the upper surface and the lower surface of the dielectric substrate, and the metal patches on the upper surface and the lower surface of the dielectric substrate are perpendicular to each other in different planes; a notch is formed in the middle of the metal patch, and a PIN diode is bridged at the notch; according to the invention, through a double-layer different-plane vertical strip-shaped metal patch structure and loading the PIN diodes at the middle notches of the patches, dynamic switching of stop bands of an X wave band and a Ku wave band on the same device is realized through independent control of the on-off states of the two PIN diodes, independent filtering control of horizontal and vertical polarized waves can be realized, and the performance of the device is improved. And the adaptability, the flexibility and the integration degree of the frequency selective surface in a complex electromagnetic environment are remarkably improved.

A communication system may include a reconfigurable intelligent surface (RIS) that reflects a radio-frequency signal between first and second devices. The RIS may include an array of antenna elements coupled to adjustable devices. The adjustable devices may configure phase shifts imparted to the radio-frequency signal upon reflection off the RIS. The adjustable devices may include switch modules or may include PIN diodes that are controlled using programmable current sources. The programmable current sources may be disposed within control integrated circuits (ICs) mounted to the periphery of the RIS. Each control IC may control the PIN diodes of a different respective set of the antenna elements. The control ICs may have serial interfaces and may be daisy chained together. The antenna element may be a dual-polarization element with five patches and four diodes in some implementations.

The application relates to the technical field of circularly polarized antennas, and discloses a small-sized circularly polarized reconfigurable metasurface antenna for assisting satellite communication, which is provided with a dielectric layer provided with a plurality of metal through holes, metal resonance structures arranged on the upper and lower surfaces of the dielectric layer and a metal ground plate; the metal resonance structure comprises a plurality of metaline units arranged in a periodic mode along a horizontal direction, each metaline unit comprising: an upper metal stub, a metal main arm and a lower metal stub arranged in a sequential mode along a vertical direction; a first PIN diode is connected with the metal main arm at a positive electrode and connected with the upper metal stub at a negative electrode; a second PIN diode is connected with the lower metal stub at a positive electrode and connected with the metal main arm at a negative electrode; and the metal ground plate is connected with the metal stubs of the metal resonance structure through the metal through holes. PIN diodes are integrated between the metal main arm and the two side grounding metal stubs, the on and off states are switched by controlling the bias voltage, and the polarization direction is adaptively adjusted.

The application discloses a two-bit phase control low-sidelobe super surface antenna, which comprises a rectangular patch antenna as a design principle to realize K-band electromagnetic wave radiation; a path equivalent electric length switching phase shifter and a patch current direction switching phase shifter are combined, the on-off state of a PIN diode in the phase shifter is changed, and 2bit modulation of the radiated electromagnetic wave is realized; a fan-shaped stub is added to a direct current control feeder line of the PIN diode to realize isolation between radio frequency signals and direct current signals; a phase reconfigurable antenna unit is combined with a Chebyshev unequal power distribution network to realize sidelobe suppression effect; a K-band low-sidelobe phase reconfigurable antenna model is combined, electromagnetic simulation software is used to optimize geometric parameters of the K-band low-sidelobe phase reconfigurable antenna model, and radiated electromagnetic responses of the design model are output; and overall antenna design is performed based on the designed unit model.

This invention discloses a reconfigurable electromagnetic metasurface unit integrating transmission, reflection, and absorption functions. The metasurface unit includes two identical polarized resonant patches connected by a central metal via. Four positive intrinsic negative PIN diodes are integrated into the tunable patch layer, and the state of the four PIN diodes is dynamically controlled by a DC bias voltage. This invention can flexibly switch the operating mode of the metasurface by a DC bias voltage, and control the electromagnetic wavefront in real time in absorption mode (low RCS), transmission mode, and reflection mode. Through array coding, it can realize functions such as high-gain beamforming, beam scanning, beam focusing, RCS reduction, beamforming, and vortex beam generation. It has the advantages of simple design, low cost, and excellent performance, and has great potential in fields such as smart skin, electronic countermeasures, and wireless communication systems.

This invention discloses a single- and dual-band reconfigurable microstrip quasi-Yagi antenna. The antenna includes a dielectric substrate, a coplanar radiating patch, a first director, a second director, a microstrip feed line, and four radio frequency (RF) PIN diodes. The coplanar radiating patch is printed on the front side of the dielectric substrate. RF PIN diodes are respectively disposed between the first and second directors, the main radiating patch of the coplanar radiating patch, and the four parasitic radiating patches. The microstrip feed line is printed on the back side of the dielectric substrate. By reasonably setting the conduction and cutoff of the four PIN diodes, this invention can operate in the n78 or n79 frequency band, or simultaneously operate in both the n78 and n79 frequency bands as a dual-band antenna. This antenna achieves good directional radiation in all operating frequency bands, with stable radiation performance. It is a novel, small-sized, lightweight, low-profile, and small-scattering-cross-section directional antenna.

This invention presents a deep learning-based method for predicting the performance and HPM effect of a PIN limiter. Using TCAD simulation software, a numerical physical model of the PIN limiter is first established. Then, based on the numerical physical model of the PIN diode, a simulation circuit for the HPM effect of the PIN limiter is built. Device parameters and HPM parameters are set according to the required features of the sample set, and transient response simulation is performed to obtain the labels corresponding to the features of the sample set. A deep learning network prediction model is constructed and trained and validated to obtain a model that meets the requirements. This model is then used to predict the performance and HPM effect of the PIN limiter under different parameters and operating conditions. This invention solves the problems of large computational load, long time consumption, and non-convergence in existing traditional methods for obtaining the limiting performance and HPM effect of PIN limiters, reducing the human and time costs of obtaining limiter performance and improving prediction efficiency and accuracy.