740 results about "PIN diode" patented technology

High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.

A germanium (Ge) short wavelength infrared (SWIR) imager and associated fabrication process are provided. The imager comprises a silicon (Si) substrate with doped wells. An array of pin diodes is formed in a relaxed Ge-containing film overlying the Si substrate, each pin diode having a flip-chip interface. There is a Ge/Si interface, and a doped Ge-containing buffer interposed between the Ge-containing film and the Ge/Si interface. An array of Si CMOS readout circuits is bonded to the flip-chip interfaces. Each readout circuit has a zero volt diode bias interface.

Pushbroom and flash lidar operations outside the visible spectrum, most preferably in near-IR but also in IR and UV, are enabled by inserting—ahead of a generally conventional lidar receiver front end—a device that receives light scattered from objects and in response forms corresponding light of a different wavelength from the scattered light. Detailed implementations using arrays of discrete COTS components—most preferably PIN diodes and VCSELs, with intervening semicustom amplifiers—are discussed, as is use of a known monolithic converter. Differential and ratioing multispectral measurements, particularly including UV data, are enabled through either spatial-sharing (e. g. plural-slit) or time-sharing.

A circuit device includes at least one switching element and a free wheeling diode connected in parallel to the switching element. The free wheeling diode is made up of a Schottky barrier diode using a semiconductor material having a band gap larger than silicon as its base material and also a silicon PiN diode, which are connected in parallel. The Schottky barrier diode and the silicon PiN diode are provided in the form of separate chips. A circuit system is also provided wherein a diode having a Schottky junction of a compound semiconductor as a rectification element built therein is combined, and a relationship, R²>4L/C, with impedance R (resistance), L (inductance), and C (capacitance) determined by a closed circuit between a power source and a positive or negative terminal when the current of the diode becomes zero during recovery operation, is satisfied.

A semiconductor device, such as a pin diode, includes a first drift layer, a second drift layer, an anode layer on the first drift layer, and a buffer layer formed between the first and second drift layers. The shortest distance from the pn-junction between the anode layer and the buffer layer, and the thickness of the buffer layer are set at the respective values at which a high breakdown voltage is obtained, while reducing the tradeoff relation between the soft recovery and the fast and low-loss reverse recovery.

The invention belongs to the technical field of reflection systems, and specifically relates to a circularly-polarized tuning modulator based on a tunable metasurface and a design method thereof. The circularly-polarized tuning modulator is mainly composed of an upper microstrip conduction band layer, a middle dielectric plate and a lower metal grounding plate. The upper microstrip conduction band layer is an electric brush structure and is mainly composed of a circular electric resonance (ELC) structure, a bias circuit and a PIN diode. The circular electric resonance (ELC) structure is composed of an upper semicircular arm, a lower semicircular arm, an arc intermediate opening, central vertical arms and intervals. By controlling the on-off state of the PIN diode, the switching from a turning transition function to a turning maintenance function and the switching from a turning hybridization function to the turning maintenance function are realized for the circularly-polarized tuning modulator. According to the invention, two or more function devices are integrated on one plate, the manufacturing cost is lowered, the efficiency and the reusability are improved, the circularly-polarized tuning modulator is realized without a multi-layer torsion chiral structure, and the circularly-polarized tuning modulator is simple in structure, small in size, low in loss, wide in frequency band and light in weight.

A detuning circuit for an MRI coil having a series tuning capacitor includes: a detuning inductor and a PIN diode in parallel communication with the tuning capacitor, where the tuning capacitor has a tuning inductor node and a PIN diode node; a first diode and a second diode in parallel communication with the PIN diode, where the first, second and PIN diodes are arranged with the same serial polarity and the first and second diodes have a common node; and a reactance in communication between the common node and the tuning inductor node. The circuit detunes the MRI coil in response to an MRI transmit pulse. A detuning circuit for an MRI coil having a series tuning capacitor includes a detuning inductor; and a detuning switch in parallel combination with a secondary tuning capacitor, the detuning inductor and the parallel combination being in parallel communication with the series tuning capacitor. The secondary tuning capacitor acts to reduce current during detuning of the MRI coil.

A system and method for remotely measuring the temperature of an object using microwave radiometry that may be used in hostile environments. A single pole-single throw reflective PIN diode switch is operable in a PASS mode and a BLOCK mode. In the PASS mode, the switch passes the power received from the object to a low-noise block converter (“LNB”) for amplification. In the BLOCK mode, the switch blocks the object power and reflects the load noise power of an ambient temperature load to the LNB. A detector diode detects the amplified power output during both the BLOCK and PASS mode and the AC signal from the detector is converted to an output signal proportional to the difference in the noise powers detected in the PASS and BLOCK modes. A servo loop uses the output signal to generate a feedback signal to a noise injection diode that causes the diode to inject sufficient power into the LNB to automatically maintain a balance between noise power measured in the PASS mode and the combined noise powers measured in the BLOCK mode. The output signal is then used to compute the temperature of the object.

The invention discloses an S-PIN-diode-based directional diagram reconfigurable disk microstrip antenna, which comprises a circular patch for generating primary radiation and six fan-shaped parasitic patches with special U-shaped slots. An S-PIN diode is arranged between the circular patch and each parasitic patch, and the turning-on and turning-off states of each S-PIN diode are controlled by controlling the bias voltage of the S-PIN diode. When the antenna works, a probe is connected with the circular patch for direct feed, and is connected with one parasitic patch through the corresponding S-PIN diode, so that surface current flows towards the patch, and a directional diagram can be deflected towards the direction. The directional diagram can be scanned in all directions by sequentially conducting adjacent S-PIN diodes. The antenna is small in size, easy to integrate and wide in application range, works within the frequency bands of 802.11g and 802.11p, and has broad application prospect, and the directional diagram can be scanned in all directions.

A reconfigurable antenna system for a mobile terminal belongs to the field of mobile terminal antennae and is characterized in that the reconfigurable antenna system is printed on a printed circuit board and comprises a variable radiation unit, a feeder line, a direct current power supply circuit and a metal ground. The radiation unit comprises a variable radiation structure and a public unit structure which are connected by using a PIN diode switch. The height of the antenna is 10mm, and the antenna feeds by a 50-ohm microstrip line. A direct current bias circuit which is arranged below the radiation unit controls the switching-on and off of a PIN diode; and a direct current pathway adopts an alternating current isolation inductor to prevent the alternating current on the radiation unit from passing. The metal ground is the metal surface that does not contain the antenna radiation unit of the two surfaces of the circuit board, and the metal ground comprises a rectangular metal patch and two F-shaped metal patches of the other parts except the antenna in the mobile terminal of an analog wireless communication system. The reconfigurable antenna system has the advantages of multi-band, compact structure and easy integration and is characterized in that the reconfigurable antenna system can support the reconfigurable function of a directional pattern and be applicable to the mobile communication terminal, in particular to the reconfigurable antenna structure of the small-sized mobile terminal.