743 results about "PIN diode" patented technology

An RF switch includes first and second diodes characterized by an intrinsic region. Pin diodes and nip diodes are examples of such diodes with intrinsic regions. The diodes are stacked with facing first connections. A bias conductor extends from the first connections.

The invention discloses a method for monolithic integration of active devices within passive semiconductor waveguides and the application of this method for use in InP-based planar wavelength division multiplexing components of optical communication systems. The epitaxial device is grown in a single run and comprises a number of layers, such that the lower part of the structure acts as a single mode passive waveguide while the upper part of the structure contains a planar PIN diode. The PIN structure is present only in the active waveguide portion and absent in all the passive waveguide portions. The active and passive waveguide portions have substantially similar guiding properties with the exception of a mode tail above a top surface of the passive waveguide portion within the active waveguide portion. As a result, an optical signal portion penetrates the I-layer of the PIN structure and interacts with semiconductor material therein for actively affecting an intensity of the optical signal with no substantial changes in guiding properties of the semiconductor waveguide. Embodiments of invention in the form of monolithically integrated waveguide photodetector, electro-absorptive attenuator and semiconductor optical amplifier are disclosed in terms of detailed epitaxial structure, layout and performance characteristics of the device.

High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.

A new method to form an integrated circuit device is achieved. The method comprises forming a dielectric layer overlying a semiconductor substrate. An intrinsic semiconductor layer is formed overlying the dielectric layer. The intrinsic semiconductor layer is patterned. A p+ region is formed in the intrinsic semiconductor layer. An n+ region is formed in the intrinsic semiconductor layer. The p+ region and said n+ region are laterally separated by an intrinsic region to thereby form a PIN diode device. A source region and a drain region are formed in the semiconductor substrate to thereby complete a MOSFET device. The PIN diode device is a gate electrode for the MOSFET device.