358 results about "PIN diode" patented technology

The invention relates to the technical field of electromagnetic materials, and discloses a lossy multimode resonant metasurface unit and a multifunctional active coding wave absorber. The lossy multimode resonant metasurface unit comprises a lossy metal pattern layer, a supporting dielectric layer, an impedance matching dielectric layer and a metal ground layer which are sequentially arranged from top to bottom; the lossy metal pattern layer comprises a multi-mode resonator and a radio frequency PIN diode, the multi-mode resonator is used for realizing a plurality of resonance modes and playing a role in electromagnetic wave frequency selection, and the radio frequency PIN diode is used for playing a role of an adjustable resistor and adjusting the electromagnetic wave loss so as to realize intensity adjustment of reflected electromagnetic waves; every two adjacent multi-mode resonators are connected in a cascading mode through a radio frequency PIN diode and are combined to form a closed-loop pattern. The multifunctional electromagnetic wave absorber is simple in structure, has the constant phase scattering cancellation characteristic, and can independently regulate and control the reflection amplitude so as to solve the technical problem of an existing multifunctional electromagnetic wave absorber.

The invention discloses a composite terminal structure of a silicon carbide PIN diode and a design method of the composite terminal structure. The composite terminal structure comprises a device cell and a device terminal. The device cell comprises an N + type heavily doped substrate, an N-type lightly doped drift layer and a P + type heavily doped layer which are arranged in sequence; the device terminal is located in the N-type lightly doped drift layer, the device terminal comprises two parts of P + type junction terminal expansion regions and three groups of P + type field limiting ring structures, P + injection rings formed by P + type ion injection are arranged in the P + type junction terminal expansion regions, a plurality of P + injection rings form the P + type field limiting ring structures, the adjacent P + injection rings are separated by the P + type junction terminal expansion regions, and the P + type field limiting ring structures are arranged in the N-type lightly doped drift layer. And the upper surfaces of the P + type junction terminal expansion region and the P + injection ring are covered with oxide layers. The high-voltage power device has the advantages of being compact in structure, small in device area, low in production cost and the like, higher breakdown voltage, better process robustness and long-term reliability are achieved within the limited chip area, and the requirements of the next-generation high-voltage power device are met.

The present invention relates to the field of electronic devices of wireless communication systems. Disclosed is an ultra-wideband and high-protection-efficiency filtering energy selective surface, comprising one or more layers of reflecting surfaces; each reflecting surface is mainly composed of a plurality of metal sheets which are located on the same plane, have the same shape and are arranged in central symmetry; a gap for electrical isolation is formed between every two adjacent metal sheets; each gap is provided with a PIN diode; the anodes and cathodes of all the PIN diodes are arranged in a clockwise or counterclockwise direction; and all the gaps form an interconnected gap structure on the plane where the reflecting surface is located. The ultra-wideband and high-protection-efficiency filtering energy selective surface can be achieved by a first-order filtering energy selective surface unit or a second-order filtering energy selective surface unit. The filtering energy selective surface of the present invention has a small surface thickness and a simple structure, can achieve fast roll-off filtering for low-power signals, achieve an ultra-wide suppression stopband, and achieve ultra-wideband and high-efficiency protection for high-power electromagnetic waves.

A metasurface array comprises a plurality of electronic control metasurface units, and each electronic control metasurface unit comprises a patch layer, a first dielectric substrate layer, a floor layer, a bonding layer, a second dielectric substrate layer and a bias line layer from top to bottom; the patch layer comprises four square double-ring metal patch structures and a dipole arm structure provided with a pin diode, a central metal through hole penetrating downwards to be connected with the offset line layer is formed in the crossed position, and corresponding to the diameter of the central metal through hole, only the diameter of an opening in the floor layer is large, and the other layers are the same; a peripheral metal blind hole penetrating through the first dielectric substrate layer is downwards formed in the central point of each square double-ring metal patch structure; the bias line layer is of a fan-shaped branch knot structure; under the cooperation of the feed source antenna, the electric control metasurface unit realizes the on-off of a pin diode through phase distribution coding under the control of the direct current control circuit board and the ARDUINO microprocessor, and realizes beam scanning in a specified direction. The antenna is wide in frequency band and low in cost.

The invention provides a frequency, polarization and directional diagram reconfigurable antenna unit and array. The antenna unit comprises a tuning microstrip antenna unit and a reconfigurable feed phase-shift network which are stacked, the tuning microstrip antenna unit comprises a circular radiation patch etched with a circular gap and four variable capacitance diodes bridged on the circular gap; two output ports of a Wilkinson power division network in the reconfigurable feed phase shift network are respectively connected with two feed point micro-strips through PIN diodes, and four feed points form a structure which is in space symmetry and asymmetric in impedance. The circular radiation patch and the annular radiation patch in the antenna unit have continuity in structure, only four variable capacitance diodes are loaded on the annular gap, gain fluctuation is reduced, and the antenna unit is fed through four feed points which are symmetrical in space and asymmetric in impedance, so that the antenna unit is more stable in performance. Good matching can be kept between the feed phase-shifting network and the antenna unit in a broadband range, and the tuning bandwidth of the antenna is widened.

The invention discloses a transmission type one-bit phase metasurface unit for 5G millimeter waves, and belongs to the field of reconfigurable metasurfaces. The two sides of the receiving patch of the unit are respectively bridged with two PIN diodes which are arranged in the same direction; the radiation patch is respectively connected with the receiving patch and the metal ground through the metal through hole and the metal blind hole; a direct-current bias microstrip circuit and a metal ground which are separated by a semi-solidified substrate are arranged between the two dielectric plates, and the direct-current bias microstrip circuit is connected with the two rectangular patches through metal blind holes. Therefore, the center of the receiving patch is equipotential with the metal ground, and the two sides of the receiving patch are equipotential with the direct-current microstrip circuit, so that the two PIN tubes are always in opposite conduction conditions when the voltage is changed. When the state changes, the induction current directions of electromagnetic waves on the upper surface receiving patch are opposite, and transmission electromagnetic waves excited on the lower surface radiation patch through the metalized through holes generate a phase difference approximate to 180 degrees. The one-bit transmission phase regulation of 5G millimeter waves is realized, and the method has important application prospects in the fields of wireless communication, beam forming and the like.

The present disclosure relates to a current sensing system for a magnetic resonance imaging (MRI) scanner operating at 1H and 23Na resonant frequencies. The system includes a dual-tuned RF coil with a network of up to two parallel quarter-wavelength transmission lines, each integrated with a PIN diode-coupled shunt capacitor. A multiple half-wavelength transmission line is employed with a corresponding pair of shunt capacitors and PIN diodes. A quarter-wavelength transmission line, coupled with a power amplifier through a matching network of shunt capacitors and PIN diodes, is also included. The configuration parameters are designed to tune the system to the fundamental frequency and its first odd multiple, correlating with the 1H resonant frequency, and to the 23Na resonant frequency. The system accurately senses coil currents by detecting voltage variations in the matching network, thereby facilitating precise current measurements at the tuned resonant frequencies without the need for external sensors.

The present invention discloses a broadband 1-bit reconfigurable circularly polarized reflectarray antenna based on a multi-resonant structure, which includes a reconfigurable circularly polarized reflection functional layer, a circularly polarized horn antenna, and an acrylic bracket. The reconfigurable circularly polarized reflection functional layer is composed of M×N circularly polarized reflectarray antenna elements with the same structure, which are periodically arranged at an interval of 0.4125λ0. The circularly polarized reflectarray antenna element consists of a radiation layer and a DC bias layer. The radiation layer includes a circuit pattern designed based on a multi-resonant structure, PIN diodes, a radiation dielectric layer, and a reflection bottom plate. The DC bias structure includes a DC bias dielectric layer and a DC bias circuit. By controlling the on-off states of four PIN diodes, 1-bit regulation of the unit reflection phase can be achieved. By adjusting the states of each circularly polarized reflectarray antenna element, a beam scanning function of ±60° can be realized, and it can be applied in wireless communication and satellite communication systems.

The invention relates to the technical field of antennas, and discloses a reconfigurable transflective array antenna applied to non-line-of-sight microwave propagation, which comprises a control circuit, and a first polarization grid layer, a first dielectric layer, M * N resonant sheets, a second dielectric layer and a second polarization grid layer which are sequentially arranged, the resonance piece comprises a radiation part, a grounding wire, four extension parts and two PIN diodes, the four extension parts are symmetrically arranged on the periphery of the radiation part and are connected with the radiation part, and the two PIN diodes are respectively arranged on two adjacent extension parts and are respectively connected with the upper polarization grid layer and the lower polarization grid layer through bending wires on the extension parts and metal columns in the dielectric layer; one end of the grounding wire is connected with the radiation part, and the other end is connected with direct-current ground; and the control circuit controls the connection and disconnection of the PIN diode through the polarization gate layer to realize a transmission mode or a reflection mode. The reconfigurable transflective array antenna applied to non-line-of-sight microwave propagation is relatively simple in structure, and loss can be reduced.

The invention discloses a simulation method and system for improving the simulation efficiency of a PIN diode, and belongs to the technical field of semiconductor device simulation, and the method comprises the steps: firstly, employing a hash table data structure to optimize the preprocessing process of a semiconductor physical model time domain numerical method, and remarkably improving the parameter preprocessing efficiency; carrying out bandwidth compression optimization on the sparse matrix in combination with an inverse Cuthill-Mckee matrix reordering algorithm; and secondly, constructing a parallel iteration solver architecture to realize efficient distributed solution of a large nonlinear matrix equation. Through cooperative application of the method, the overall calculation efficiency of a PIN diode numerical simulation program is improved by more than three times compared with that of traditional commercial simulation software COMSOL on the premise that the calculation precision is kept, the industrial problem that the simulation timeliness of a semiconductor device is limited is effectively solved, and an innovative technical path is provided for high-precision real-time simulation. The method has important application value in the fields of power device design, integrated circuit simulation and the like.

The invention provides a 1bit circular polarization reconfigurable transmission unit, which belongs to the field of low orbit satellite communication and comprises a radiation patch, a first dielectric substrate, a grounding plate, a second dielectric substrate, a biasing circuit, a third dielectric substrate and a receiving patch which are sequentially arranged from top to bottom, a single side of the radiation patch is slotted and is connected to a first capacitor disc in the center of the grounding plate through a metalized through hole in the center of the first dielectric substrate, an internal patch of the receiving patch is connected to a second capacitor disc through a metalized through hole in the center of the third dielectric substrate, and the second capacitor disc is located on the third dielectric substrate and is connected to the biasing circuit. The external patch of the receiving patch is connected to the biasing circuit through a metalized through hole, and the internal patch and the external patch are bridged through two PIN diodes with the same orientation; the invention further provides an array antenna. Metallized via holes are replaced by capacitor disc coupling, complexity and cost are greatly reduced, structural symmetry is broken through single-side slotting of the radiation patches, conversion efficiency of linearly polarized waves is improved during array forming, and circular polarization performance is improved.

A current sensing system for a magnetic resonance imaging (MRI) scanner operating at 1H and 31P resonant frequencies includes a dual-tuned RF coil with a network of up to two parallel quarter-wavelength transmission lines, each integrated with a PIN diode-coupled shunt capacitor. A multiple half-wavelength transmission line is employed with a corresponding pair of shunt capacitors and PIN diodes. A quarter-wavelength transmission line, coupled with a power amplifier through a matching network of shunt capacitors and PIN diodes, is also included. The configuration parameters are designed to tune the system to the fundamental frequency and its first odd multiple, correlating with the 1H resonant frequency, and to the 31P resonant frequency. The system accurately senses coil currents by detecting voltage variations in the matching network, thereby facilitating precise current measurements at the tuned resonant frequencies without the need for external sensors.

The invention provides a display panel, a display device and a preparation method of a PIN diode, and relates to the technical field of semiconductors. Since the array layer of the display panel forms a plurality of film layers by adopting an ion implantation mode in the preparation process, the PIN diode is integrated in the array layer firstly, and then the P-type semiconductor layer is prepared by adopting the ion implantation mode used in the preparation process of the array layer in the preparation process of the array layer, so that the P-type semiconductor layer can be prepared in the preparation process of the array layer. The purposes of simplifying the preparation process flow and reducing the production cost are achieved. Furthermore, the ion implantation depth of the first doped ions is smaller than the thickness of the P-type semiconductor layer, and a diffusion space is provided for diffusion of the first doped ions in the region of the P-type semiconductor layer in which the first doped ions are not directly implanted, so that the depth of the first doped ions diffused to the intrinsic semiconductor layer is reduced to the greatest extent, and the diffusion efficiency of the intrinsic semiconductor layer is improved. And the photoelectric property of the PIN diode is ensured.

The invention belongs to the technical field of electromagnetic wave-absorbing materials, and particularly relates to a zero-power absorption type adjustable metasurface composite material and a preparation method thereof. Comprising a panel, a square-ring-shaped metal layer, a cross-shaped metal layer, an electric control metamaterial, a resistive film and a reflecting back plate from top to bottom in sequence, a core layer is arranged among the square metal layer, the cross curve metal layer, the electric control metamaterial, the resistive film and the reflecting back plate; the electric control metamaterial comprises second structure units which are periodically arranged along x and y directions and contain PIN diodes, and the PIN diodes are embedded into the structure; the cross curve metal layer and the square metal layer respectively comprise a third structure unit and a fourth structure unit which are periodically arranged along the x direction and the y direction. Through a cascade structure formed by the electric control metamaterial, the cross-shaped metal layer and the square ring-shaped metal layer, when the PIN diode is switched off, the wave absorbing state is presented, when the PIN diode is switched on, the reflecting state is presented, and electromagnetic waves are absorbed under the condition that bias voltage is not applied.

The invention relates to the technical field of transmit-receive converters, in particular to a short wave transceiver common antenna transmit-receive converter based on a PIN diode. The transmit-receive converter comprises a power control module used for monitoring the output power of a power amplifier in real time and dynamically adjusting the output power through a variable attenuator; the cooperative control unit is configured to adjust the attenuation amount of the output power according to the power control module; determining an adjustment strategy of a pre-distortion coefficient in a digital pre-distortion algorithm; and the digital pre-distortion module is used for determining a pre-distortion coefficient in a digital pre-distortion algorithm according to the adjusted output power and the integer strategy so as to compensate nonlinear distortion of the power amplifier through the pre-distortion coefficient.

The invention provides a leaky-wave antenna and a frequency-modulated continuous wave generation method based on the leaky-wave antenna, and relates to the field of millimeter-wave radar, and the method comprises the steps: constructing a space-time coding matrix, configuring a radiation unit state regulation and control beam direction in a space domain, modulating a radiation unit state switching rule in a time domain to generate a frequency-modulated continuous wave, and achieving space-time dual-domain regulation and control. And frequency-modulated continuous waves with controllable bandwidth are generated. The space-time coding leaky-wave antenna is formed by alternately arranging 1-bit radiation units in an upper row and a lower row, switching of radiation / non-radiation states is achieved by loading a synchronous bias PIN diode across an annular gap, a space-time coding matrix is constructed, the states of the radiation units are configured in a space domain to regulate and control the wave beam direction, and the space-time coding leaky-wave antenna is formed. Modulating the switching rule of the radiation unit in a time domain, and generating a frequency-modulated continuous wave; the radiation efficiency is improved by the alternative arrangement of the radiation units, the control difficulty and the hardware cost are reduced, multiple functions are integrated into a single device, and the problem of low integration level of the traditional separation architecture is solved.

The invention relates to the technical field of dual-polarized antenna manufacturing, in particular to an easy-to-feed broadband dual-polarized reconfigurable transmission antenna array, which is provided with a feed source antenna, a direct current bias network and more than two dual-polarized reconfigurable units, wherein each dual-polarization reconfigurable transmission antenna unit is formed by orthogonally arranging two identical reconfigurable transmission units on the same plane, and each reconfigurable transmission unit is internally provided with two linearly polarized dipoles which are arranged along the same direction; the two dipoles form a receiving and transmitting structure of an active receiving dipole and a passive asymmetric transmitting dipole, the two dipoles are separated through a common grounding point and connected through a metalized through hole, and a dipole is connected beside each dipole unit in parallel to serve as a passive parasitic bypass so as to expand the bandwidth of the antenna. The receiving dipole is integrated with two pin diodes.

In an aspect there is provided a semiconductor device including: first and second parallel multilayered active regions, each including at least one lower semiconductor layer and at least one upper semiconductor layer stacked over the at least one lower semiconductor layer; and a PIN diode structure including: an epitaxial first lower semiconductor body arranged along a first portion of the first active region, at a level of the at least one lower semiconductor layer of the first active region, and an epitaxial second lower semiconductor body arranged along a second portion of the second active region directly opposite to the first portion, at a level of the at least one lower semiconductor layer of the second active region; an epitaxial first upper semiconductor body arranged along the first portion, at a level of the at least one upper semiconductor layer of the first active region and spaced apart from the first lower semiconductor body, and an epitaxial second upper semiconductor body arranged along the second portion, at a level of the at least one upper semiconductor layer of the second active region and spaced apart from the second lower semiconductor body; and an epitaxial intermediate semiconductor body arranged between the first and second active regions, in contact with the first and second lower and upper semiconductor bodies and connecting the first and second lower and upper semiconductor bodies, wherein the lower and upper semiconductor bodies are doped to define relatively high-doped P-type and N-type diode body portions, respectively, of the PIN diode structure, and wherein the intermediate semiconductor body defines a relatively low-doped or intrinsic diode portion of the PIN diode structure.

The invention discloses a low-loss broadband 1-bit transmission type intelligent metasurface and a dynamic beam regulation and control method, and belongs to the technical field of wireless communication. The intelligent metasurface is composed of transmission type metasurface units arranged periodically, each unit comprises a receiving patch layer, a feeder line layer and a transmitting patch layer, and 1-bit phase modulation is achieved by loading a PIN diode. The transmission coefficient of the unit in the frequency band of 6.00-7.23 GHz is greater than-3dB, the transmission loss at the frequency band of 6.6 GHz is as low as-0.58 dB, and the reflection coefficient is-20.74 dB. By adjusting the phase compensation of the metasurface unit, beam focusing and beam scanning within the range of 0-30 degrees can be realized, and the gain of the feed source antenna and the efficiency of a communication system are remarkably improved. The transmission-type intelligent metasurface solves the problems that an existing transmission-type intelligent metasurface is high in loss and narrow in bandwidth, and is suitable for intelligent wireless environment regulation and control in a sixth-generation mobile communication system.

The invention discloses a dual-band dual-linear polarization reconfigurable folding transmission-reflection array antenna, which comprises an upper-layer metasurface, a lower-layer metasurface and a feed source antenna, the upper-layer metasurface is provided with 12 * 12 first unit structures, and each first unit structure comprises a first metasurface metal patch, a first dielectric substrate, a second metasurface metal patch, a second dielectric substrate and a third metasurface metal patch which are connected from top to bottom; the lower-layer metasurface is provided with 12 * 12 second unit structures, and each second unit structure comprises an annular gap metal patch, a third dielectric substrate and a bottom-layer feeder line which are connected from top to bottom; two PIN diodes are integrated in an annular gap of the annular gap metal patch, and the annular gap metal patch is connected with a bottom feeder line located on the upper surface of the third dielectric substrate through a feed probe; and a 2 * 2 unit size is reserved in the center of the lower-layer metasurface and is used for placing a feed source antenna. According to the invention, dual-frequency dual-linear polarization bidirectional wave beam scanning is realized, and the low-profile characteristic is realized.

The invention discloses a system and a method for realizing space beam dynamic pointing based on a multi-area distributed dynamic adjustable metasurface, and belongs to the technical field of electromagnetic wave regulation and control. The system comprises a multi-region distributed metasurface structure and a controller, and the metasurface structure is divided into a passive implementation mode and an active implementation mode: the passive metasurface dynamically switches an activation region by using a high-speed single-pole multi-throw switch through a unit structure which is pre-divided into a plurality of independent regions and presets 0 / pi phase response; the active metasurface adopts a controllable switch element array integrated with a PIN diode or an adjustable capacitor, and the on-off state is controlled through a multi-pole single-throw switch so as to adjust the phase response. And the controller periodically switches the metasurface state in the time dimension to realize full-space rapid scanning in the beam direction. The method breaks through the flexibility limitation of the traditional beam forming technology, has the advantages of low cost, high real-time performance and full-space coverage, and can be applied to a wireless communication base station antenna array and radar imaging equipment.

A metasurface unit is printed on a dielectric substrate by adopting a double-layer metal structure, a top-layer metal structure comprises a central cross-shaped metal patch, an edge square ring metal patch and rectangular metal patches on two sides, the central cross-shaped metal patch is placed at the central position of the dielectric substrate, and the edge square ring metal patch is placed at the central position of the dielectric substrate. The edge of the edge square ring metal patch coincides with the edge of the dielectric substrate, the rectangular metal patches on the two sides are placed between the central cross-shaped metal patch and the edge square ring metal patch and connected with the edge square ring metal patch, and a gap is reserved between the rectangular metal patches on the two sides and the central cross-shaped metal patch. PIN diodes are loaded at gaps between the rectangular metal patches on the two sides and the central cross-shaped metal patch; the bottom layer metal structure is obtained by rotating the top layer metal structure by 90 degrees according to the normal direction, and the top layer cross-shaped metal patch and the bottom layer cross-shaped metal patch are connected through a metal through hole. According to the invention, the self-adaptive switching wave transmission and reflection functions can be realized.

The invention relates to the technical field of microwave radio frequency, in particular to a third-order tuning low-pass filter. Comprising an input coupling inductor L1, a first interstage coupling inductor L2, a second interstage coupling inductor L3, an output coupling inductor L4, a first tuning capacitor C1, a second tuning capacitor C2 and a third tuning capacitor C3, the first tuning capacitor C1, the second tuning capacitor C2 and the third tuning capacitor C3 are all adjustable capacitor arrays, and each tunable capacitor is composed of a plurality of capacitors and PIN diodes. By changing the control signal into a high level or a low level, the conduction or cut-off state of the PIN diode is changed, and then the equivalent capacitance value of the whole tuning capacitor is changed, so that the frequency of the filter is correspondingly changed, and different working frequency bands are obtained. The three-order tuning low-pass filter can effectively restrain third and more harmonic waves at the rear ends of the frequency hopping filter and the power amplifier, and the cut-off frequency of the three-order tuning low-pass filter can change along with control signals.

The invention relates to a dual-polarization 2bit transmission type metasurface unit working in a Ka wave band, which can realize four-state phase regulation and control of horizontal polarization and vertical polarization on a specified frequency band. And an implementation scheme with a better system integration advantage is provided for the high-frequency multi-polarization reconfigurable antenna system. The unit is composed of two groups of linearly polarized 2bit reconfigurable units which are orthogonally arranged, and each unit is composed of a pair of active receiving antennas at the bottom and a pair of active transmitting antennas at the top; a pair of PIN diodes are respectively integrated in a receiving antenna and a transmitting antenna, and four discrete phase states are realized through combination of switch states, so that 2-bit phase regulation and control are completed. The invention has the following advantages: 1, low transmission amplitude loss and precise phase gradient characteristic are shown in the dual-polarization Ka wave band, and high-precision wave beam regulation and control can be realized; 2, due to the fact that dual-line polarization adopts a synchronous regulation and control mode, the unit can complete phase control only through two feeder lines, and compared with an independent polarization control scheme, the complexity of a feed and bias network is remarkably reduced, so that interference of a bias circuit on electromagnetic radiation characteristics is effectively reduced; and 3, the emergent wave beam of the transmission type metasurface is located on the same side with the transmission type metasurface, so that the shielding of the feed source can be reduced, the interference of a reflection path is avoided, the aperture efficiency is improved, and the sidelobe is reduced.

The invention discloses a dual-passband reconfigurable frequency selection wave absorber structure and an array thereof. The dual-passband reconfigurable frequency selection wave absorber structure comprises a controllable lossy wave absorbing layer and a controllable lossless frequency selection layer which are arranged at an interval from top to bottom, the upper surface and the lower surface of the controllable lossy wave absorbing layer are provided with butterfly-shaped metal patches which are arranged in a cross shape. The two ends of each butterfly-shaped metal patch are provided with T-shaped metal strips. A first resistor is arranged on the T-shaped metal strip to consume electromagnetic waves, first pin diodes are arranged at the joint of the T-shaped metal strip and the fan-shaped metal patch and the joint of the fan-shaped gap, a double-layer square gap with a sunken structure is formed in the metal patch on the upper surface of the controllable lossless frequency selection layer, and a second pin diode is arranged in the sunken structure; the first pin diode and the second pin diode are used for controlling the reconfigurable closing of the dual-passband. According to the invention, two low-insertion-loss passbands are provided, the broadband wave-absorbing characteristic is good, and reconfigurable closing of two transmission windows can be realized by controlling the PIN diodes, so that full-band invisibility is realized.

The application discloses a high-gain millimeter wave polarization reconfigurable antenna and belongs to the technical field of wireless communication.The application provides a high-gain millimeter wave polarization reconfigurable antenna, and the whole antenna structure is completed on two layers of dielectric substrates.Polarization diversity is realized by connecting the center patch of two groups of parasitic short columns by using pin diode switches, and the polarization state can be switched in the directions of ±45 degrees.Then, in order to improve the radiation performance of the antenna, an extended semi-ellipsoid lens is added to the antenna, so that the antenna gain is increased by about 10 dB, and therefore, the integrated lens antenna is an effective method for developing the millimeter wave polarization reconfigurable antenna.The gain-enhanced polarization reconfigurable antenna has the advantages of high gain, low cost and stable radiation pattern and is an ideal choice for low-cost millimeter wave applications of the fifth generation (5G) communication technology.

The present application relates to an energy selective antenna and a design method thereof, comprising: a dielectric plate. A main radiating unit, fixedly mounted on the top of the dielectric plate. A metal ground, provided at the bottom of the dielectric plate. Parasitic radiating units, relatively provided on both sides of the radiating edge of the main radiating unit. A PIN diode group, fixedly mounted between the main radiating unit and the parasitic radiating unit. A feeding interface, provided at the top of the main radiating unit and having an inner conductor and an outer conductor, the inner conductor passing through the dielectric plate and connected to the main radiating unit, and the outer conductor connected to one side of the metal ground. The energy selective antenna is designed as an integrated whole based on the integration of the energy selective surface and the antenna, which saves system space and avoids the influence of the energy selective surface on the antenna performance. At the same time, by changing the operating frequency of the antenna in different states, adaptive protection against high-power microwaves is achieved, effectively improving the security of the electronic communication system.

The application relates to a reconfigurable metasurface for electrically-controlled scanning of a real-aperture microwave radiometer, which comprises a plurality of array-distributed basic units, the basic unit comprising a top metal patch, a first dielectric layer, a metal reflection layer, a second dielectric layer and a bottom metal layer which are sequentially stacked from top to bottom; the top metal patch comprises two cross-connected I-shaped patches and a triangular metal branch located in the cross region and having a certain gap with the I-shaped patch; the I-shaped patch comprises a straight arm and end arms located at both ends of the straight arm and having a certain gap with the straight arm; a PIN diode is connected between the straight arm and the end arms; the end arms are connected with each other through a metal feed line, and an isolation resistor is arranged on the metal feed line; the application dynamically controls the reflection phase according to the working state of the diode combination, and has high reflectivity and reflection bandwidth and small loss.

This invention relates to the field of power transformer protection technology, and discloses a transformer DC bias suppression system and method. The method includes collecting subway operation, power grid structure, and soil geological parameters; establishing a dynamic calculation model based on these parameters to generate distribution data of rail potential, stray current, and ground potential; constructing a bias assessment model to calculate the dynamic DC current flowing through the transformer neutral point and the excitation current distortion; using a random forest algorithm for evaluation, outputting a quantitative impact level and a set of key factors; and based on this level, key factors, and transformer grounding method, formulating a suppression strategy that includes configuration parameters of a silicon carbide PiN diode active suppression device and a grounding optimization scheme. This invention achieves accurate assessment and targeted suppression of DC bias problems caused by subways.

This application belongs to the field of microwave engineering, specifically relating to a dual-polarization, reconfigurable, stealthy, and transparent integrated frequency selective surface and radome. The frequency selective surface consists of a three-layer structure: an adjustable FSS layer, an adjustable impedance layer, and a non-adjustable impedance layer. A PIN diode is loaded in the adjustable layer, while a resistor is loaded in the impedance layer. A spiral resonator and an interdigital capacitor resonator are used in the non-adjustable and adjustable impedance layers, respectively. Metal structures arranged in the x and y directions are placed on both sides of the adjustable impedance layer to achieve dual polarization. The adjustable FSS layer forms a transmission window and has reconfigurable functionality. Utilizing the PIN diode and multi-layer structure design, the switching between transmission and absorption functions in the X-band is achieved, realizing a stealthy and transparent integrated design. Transmission and absorption modes can be switched in the X-band, achieving integrated stealth functionality. The radome, through this frequency selective surface, possesses both transmission and absorption capabilities and reconfigurable characteristics.