265 results about "PIN diode" patented technology

The invention relates to the technical field of electromagnetic materials, and discloses a lossy multimode resonant metasurface unit and a multifunctional active coding wave absorber. The lossy multimode resonant metasurface unit comprises a lossy metal pattern layer, a supporting dielectric layer, an impedance matching dielectric layer and a metal ground layer which are sequentially arranged from top to bottom; the lossy metal pattern layer comprises a multi-mode resonator and a radio frequency PIN diode, the multi-mode resonator is used for realizing a plurality of resonance modes and playing a role in electromagnetic wave frequency selection, and the radio frequency PIN diode is used for playing a role of an adjustable resistor and adjusting the electromagnetic wave loss so as to realize intensity adjustment of reflected electromagnetic waves; every two adjacent multi-mode resonators are connected in a cascading mode through a radio frequency PIN diode and are combined to form a closed-loop pattern. The multifunctional electromagnetic wave absorber is simple in structure, has the constant phase scattering cancellation characteristic, and can independently regulate and control the reflection amplitude so as to solve the technical problem of an existing multifunctional electromagnetic wave absorber.

A metasurface array comprises a plurality of electronic control metasurface units, and each electronic control metasurface unit comprises a patch layer, a first dielectric substrate layer, a floor layer, a bonding layer, a second dielectric substrate layer and a bias line layer from top to bottom; the patch layer comprises four square double-ring metal patch structures and a dipole arm structure provided with a pin diode, a central metal through hole penetrating downwards to be connected with the offset line layer is formed in the crossed position, and corresponding to the diameter of the central metal through hole, only the diameter of an opening in the floor layer is large, and the other layers are the same; a peripheral metal blind hole penetrating through the first dielectric substrate layer is downwards formed in the central point of each square double-ring metal patch structure; the bias line layer is of a fan-shaped branch knot structure; under the cooperation of the feed source antenna, the electric control metasurface unit realizes the on-off of a pin diode through phase distribution coding under the control of the direct current control circuit board and the ARDUINO microprocessor, and realizes beam scanning in a specified direction. The antenna is wide in frequency band and low in cost.

The invention discloses a transmission type one-bit phase metasurface unit for 5G millimeter waves, and belongs to the field of reconfigurable metasurfaces. The two sides of the receiving patch of the unit are respectively bridged with two PIN diodes which are arranged in the same direction; the radiation patch is respectively connected with the receiving patch and the metal ground through the metal through hole and the metal blind hole; a direct-current bias microstrip circuit and a metal ground which are separated by a semi-solidified substrate are arranged between the two dielectric plates, and the direct-current bias microstrip circuit is connected with the two rectangular patches through metal blind holes. Therefore, the center of the receiving patch is equipotential with the metal ground, and the two sides of the receiving patch are equipotential with the direct-current microstrip circuit, so that the two PIN tubes are always in opposite conduction conditions when the voltage is changed. When the state changes, the induction current directions of electromagnetic waves on the upper surface receiving patch are opposite, and transmission electromagnetic waves excited on the lower surface radiation patch through the metalized through holes generate a phase difference approximate to 180 degrees. The one-bit transmission phase regulation of 5G millimeter waves is realized, and the method has important application prospects in the fields of wireless communication, beam forming and the like.

The present disclosure relates to a current sensing system for a magnetic resonance imaging (MRI) scanner operating at 1H and 23Na resonant frequencies. The system includes a dual-tuned RF coil with a network of up to two parallel quarter-wavelength transmission lines, each integrated with a PIN diode-coupled shunt capacitor. A multiple half-wavelength transmission line is employed with a corresponding pair of shunt capacitors and PIN diodes. A quarter-wavelength transmission line, coupled with a power amplifier through a matching network of shunt capacitors and PIN diodes, is also included. The configuration parameters are designed to tune the system to the fundamental frequency and its first odd multiple, correlating with the 1H resonant frequency, and to the 23Na resonant frequency. The system accurately senses coil currents by detecting voltage variations in the matching network, thereby facilitating precise current measurements at the tuned resonant frequencies without the need for external sensors.

The invention relates to the technical field of antennas, and discloses a reconfigurable transflective array antenna applied to non-line-of-sight microwave propagation, which comprises a control circuit, and a first polarization grid layer, a first dielectric layer, M * N resonant sheets, a second dielectric layer and a second polarization grid layer which are sequentially arranged, the resonance piece comprises a radiation part, a grounding wire, four extension parts and two PIN diodes, the four extension parts are symmetrically arranged on the periphery of the radiation part and are connected with the radiation part, and the two PIN diodes are respectively arranged on two adjacent extension parts and are respectively connected with the upper polarization grid layer and the lower polarization grid layer through bending wires on the extension parts and metal columns in the dielectric layer; one end of the grounding wire is connected with the radiation part, and the other end is connected with direct-current ground; and the control circuit controls the connection and disconnection of the PIN diode through the polarization gate layer to realize a transmission mode or a reflection mode. The reconfigurable transflective array antenna applied to non-line-of-sight microwave propagation is relatively simple in structure, and loss can be reduced.

The invention discloses a simulation method and system for improving the simulation efficiency of a PIN diode, and belongs to the technical field of semiconductor device simulation, and the method comprises the steps: firstly, employing a hash table data structure to optimize the preprocessing process of a semiconductor physical model time domain numerical method, and remarkably improving the parameter preprocessing efficiency; carrying out bandwidth compression optimization on the sparse matrix in combination with an inverse Cuthill-Mckee matrix reordering algorithm; and secondly, constructing a parallel iteration solver architecture to realize efficient distributed solution of a large nonlinear matrix equation. Through cooperative application of the method, the overall calculation efficiency of a PIN diode numerical simulation program is improved by more than three times compared with that of traditional commercial simulation software COMSOL on the premise that the calculation precision is kept, the industrial problem that the simulation timeliness of a semiconductor device is limited is effectively solved, and an innovative technical path is provided for high-precision real-time simulation. The method has important application value in the fields of power device design, integrated circuit simulation and the like.

The invention provides a 1bit circular polarization reconfigurable transmission unit, which belongs to the field of low orbit satellite communication and comprises a radiation patch, a first dielectric substrate, a grounding plate, a second dielectric substrate, a biasing circuit, a third dielectric substrate and a receiving patch which are sequentially arranged from top to bottom, a single side of the radiation patch is slotted and is connected to a first capacitor disc in the center of the grounding plate through a metalized through hole in the center of the first dielectric substrate, an internal patch of the receiving patch is connected to a second capacitor disc through a metalized through hole in the center of the third dielectric substrate, and the second capacitor disc is located on the third dielectric substrate and is connected to the biasing circuit. The external patch of the receiving patch is connected to the biasing circuit through a metalized through hole, and the internal patch and the external patch are bridged through two PIN diodes with the same orientation; the invention further provides an array antenna. Metallized via holes are replaced by capacitor disc coupling, complexity and cost are greatly reduced, structural symmetry is broken through single-side slotting of the radiation patches, conversion efficiency of linearly polarized waves is improved during array forming, and circular polarization performance is improved.

A current sensing system for a magnetic resonance imaging (MRI) scanner operating at 1H and 31P resonant frequencies includes a dual-tuned RF coil with a network of up to two parallel quarter-wavelength transmission lines, each integrated with a PIN diode-coupled shunt capacitor. A multiple half-wavelength transmission line is employed with a corresponding pair of shunt capacitors and PIN diodes. A quarter-wavelength transmission line, coupled with a power amplifier through a matching network of shunt capacitors and PIN diodes, is also included. The configuration parameters are designed to tune the system to the fundamental frequency and its first odd multiple, correlating with the 1H resonant frequency, and to the 31P resonant frequency. The system accurately senses coil currents by detecting voltage variations in the matching network, thereby facilitating precise current measurements at the tuned resonant frequencies without the need for external sensors.

The invention belongs to the technical field of electromagnetic wave-absorbing materials, and particularly relates to a zero-power absorption type adjustable metasurface composite material and a preparation method thereof. Comprising a panel, a square-ring-shaped metal layer, a cross-shaped metal layer, an electric control metamaterial, a resistive film and a reflecting back plate from top to bottom in sequence, a core layer is arranged among the square metal layer, the cross curve metal layer, the electric control metamaterial, the resistive film and the reflecting back plate; the electric control metamaterial comprises second structure units which are periodically arranged along x and y directions and contain PIN diodes, and the PIN diodes are embedded into the structure; the cross curve metal layer and the square metal layer respectively comprise a third structure unit and a fourth structure unit which are periodically arranged along the x direction and the y direction. Through a cascade structure formed by the electric control metamaterial, the cross-shaped metal layer and the square ring-shaped metal layer, when the PIN diode is switched off, the wave absorbing state is presented, when the PIN diode is switched on, the reflecting state is presented, and electromagnetic waves are absorbed under the condition that bias voltage is not applied.

The invention provides a leaky-wave antenna and a frequency-modulated continuous wave generation method based on the leaky-wave antenna, and relates to the field of millimeter-wave radar, and the method comprises the steps: constructing a space-time coding matrix, configuring a radiation unit state regulation and control beam direction in a space domain, modulating a radiation unit state switching rule in a time domain to generate a frequency-modulated continuous wave, and achieving space-time dual-domain regulation and control. And frequency-modulated continuous waves with controllable bandwidth are generated. The space-time coding leaky-wave antenna is formed by alternately arranging 1-bit radiation units in an upper row and a lower row, switching of radiation / non-radiation states is achieved by loading a synchronous bias PIN diode across an annular gap, a space-time coding matrix is constructed, the states of the radiation units are configured in a space domain to regulate and control the wave beam direction, and the space-time coding leaky-wave antenna is formed. Modulating the switching rule of the radiation unit in a time domain, and generating a frequency-modulated continuous wave; the radiation efficiency is improved by the alternative arrangement of the radiation units, the control difficulty and the hardware cost are reduced, multiple functions are integrated into a single device, and the problem of low integration level of the traditional separation architecture is solved.

In an aspect there is provided a semiconductor device including: first and second parallel multilayered active regions, each including at least one lower semiconductor layer and at least one upper semiconductor layer stacked over the at least one lower semiconductor layer; and a PIN diode structure including: an epitaxial first lower semiconductor body arranged along a first portion of the first active region, at a level of the at least one lower semiconductor layer of the first active region, and an epitaxial second lower semiconductor body arranged along a second portion of the second active region directly opposite to the first portion, at a level of the at least one lower semiconductor layer of the second active region; an epitaxial first upper semiconductor body arranged along the first portion, at a level of the at least one upper semiconductor layer of the first active region and spaced apart from the first lower semiconductor body, and an epitaxial second upper semiconductor body arranged along the second portion, at a level of the at least one upper semiconductor layer of the second active region and spaced apart from the second lower semiconductor body; and an epitaxial intermediate semiconductor body arranged between the first and second active regions, in contact with the first and second lower and upper semiconductor bodies and connecting the first and second lower and upper semiconductor bodies, wherein the lower and upper semiconductor bodies are doped to define relatively high-doped P-type and N-type diode body portions, respectively, of the PIN diode structure, and wherein the intermediate semiconductor body defines a relatively low-doped or intrinsic diode portion of the PIN diode structure.

The invention discloses a dual-band dual-linear polarization reconfigurable folding transmission-reflection array antenna, which comprises an upper-layer metasurface, a lower-layer metasurface and a feed source antenna, the upper-layer metasurface is provided with 12 * 12 first unit structures, and each first unit structure comprises a first metasurface metal patch, a first dielectric substrate, a second metasurface metal patch, a second dielectric substrate and a third metasurface metal patch which are connected from top to bottom; the lower-layer metasurface is provided with 12 * 12 second unit structures, and each second unit structure comprises an annular gap metal patch, a third dielectric substrate and a bottom-layer feeder line which are connected from top to bottom; two PIN diodes are integrated in an annular gap of the annular gap metal patch, and the annular gap metal patch is connected with a bottom feeder line located on the upper surface of the third dielectric substrate through a feed probe; and a 2 * 2 unit size is reserved in the center of the lower-layer metasurface and is used for placing a feed source antenna. According to the invention, dual-frequency dual-linear polarization bidirectional wave beam scanning is realized, and the low-profile characteristic is realized.

The invention discloses a system and a method for realizing space beam dynamic pointing based on a multi-area distributed dynamic adjustable metasurface, and belongs to the technical field of electromagnetic wave regulation and control. The system comprises a multi-region distributed metasurface structure and a controller, and the metasurface structure is divided into a passive implementation mode and an active implementation mode: the passive metasurface dynamically switches an activation region by using a high-speed single-pole multi-throw switch through a unit structure which is pre-divided into a plurality of independent regions and presets 0 / pi phase response; the active metasurface adopts a controllable switch element array integrated with a PIN diode or an adjustable capacitor, and the on-off state is controlled through a multi-pole single-throw switch so as to adjust the phase response. And the controller periodically switches the metasurface state in the time dimension to realize full-space rapid scanning in the beam direction. The method breaks through the flexibility limitation of the traditional beam forming technology, has the advantages of low cost, high real-time performance and full-space coverage, and can be applied to a wireless communication base station antenna array and radar imaging equipment.

A metasurface unit is printed on a dielectric substrate by adopting a double-layer metal structure, a top-layer metal structure comprises a central cross-shaped metal patch, an edge square ring metal patch and rectangular metal patches on two sides, the central cross-shaped metal patch is placed at the central position of the dielectric substrate, and the edge square ring metal patch is placed at the central position of the dielectric substrate. The edge of the edge square ring metal patch coincides with the edge of the dielectric substrate, the rectangular metal patches on the two sides are placed between the central cross-shaped metal patch and the edge square ring metal patch and connected with the edge square ring metal patch, and a gap is reserved between the rectangular metal patches on the two sides and the central cross-shaped metal patch. PIN diodes are loaded at gaps between the rectangular metal patches on the two sides and the central cross-shaped metal patch; the bottom layer metal structure is obtained by rotating the top layer metal structure by 90 degrees according to the normal direction, and the top layer cross-shaped metal patch and the bottom layer cross-shaped metal patch are connected through a metal through hole. According to the invention, the self-adaptive switching wave transmission and reflection functions can be realized.

The invention relates to a dual-polarization 2bit transmission type metasurface unit working in a Ka wave band, which can realize four-state phase regulation and control of horizontal polarization and vertical polarization on a specified frequency band. And an implementation scheme with a better system integration advantage is provided for the high-frequency multi-polarization reconfigurable antenna system. The unit is composed of two groups of linearly polarized 2bit reconfigurable units which are orthogonally arranged, and each unit is composed of a pair of active receiving antennas at the bottom and a pair of active transmitting antennas at the top; a pair of PIN diodes are respectively integrated in a receiving antenna and a transmitting antenna, and four discrete phase states are realized through combination of switch states, so that 2-bit phase regulation and control are completed. The invention has the following advantages: 1, low transmission amplitude loss and precise phase gradient characteristic are shown in the dual-polarization Ka wave band, and high-precision wave beam regulation and control can be realized; 2, due to the fact that dual-line polarization adopts a synchronous regulation and control mode, the unit can complete phase control only through two feeder lines, and compared with an independent polarization control scheme, the complexity of a feed and bias network is remarkably reduced, so that interference of a bias circuit on electromagnetic radiation characteristics is effectively reduced; and 3, the emergent wave beam of the transmission type metasurface is located on the same side with the transmission type metasurface, so that the shielding of the feed source can be reduced, the interference of a reflection path is avoided, the aperture efficiency is improved, and the sidelobe is reduced.

The application discloses a high-gain millimeter wave polarization reconfigurable antenna and belongs to the technical field of wireless communication.The application provides a high-gain millimeter wave polarization reconfigurable antenna, and the whole antenna structure is completed on two layers of dielectric substrates.Polarization diversity is realized by connecting the center patch of two groups of parasitic short columns by using pin diode switches, and the polarization state can be switched in the directions of ±45 degrees.Then, in order to improve the radiation performance of the antenna, an extended semi-ellipsoid lens is added to the antenna, so that the antenna gain is increased by about 10 dB, and therefore, the integrated lens antenna is an effective method for developing the millimeter wave polarization reconfigurable antenna.The gain-enhanced polarization reconfigurable antenna has the advantages of high gain, low cost and stable radiation pattern and is an ideal choice for low-cost millimeter wave applications of the fifth generation (5G) communication technology.

The present application relates to an energy selective antenna and a design method thereof, comprising: a dielectric plate. A main radiating unit, fixedly mounted on the top of the dielectric plate. A metal ground, provided at the bottom of the dielectric plate. Parasitic radiating units, relatively provided on both sides of the radiating edge of the main radiating unit. A PIN diode group, fixedly mounted between the main radiating unit and the parasitic radiating unit. A feeding interface, provided at the top of the main radiating unit and having an inner conductor and an outer conductor, the inner conductor passing through the dielectric plate and connected to the main radiating unit, and the outer conductor connected to one side of the metal ground. The energy selective antenna is designed as an integrated whole based on the integration of the energy selective surface and the antenna, which saves system space and avoids the influence of the energy selective surface on the antenna performance. At the same time, by changing the operating frequency of the antenna in different states, adaptive protection against high-power microwaves is achieved, effectively improving the security of the electronic communication system.

The application relates to a reconfigurable metasurface for electrically-controlled scanning of a real-aperture microwave radiometer, which comprises a plurality of array-distributed basic units, the basic unit comprising a top metal patch, a first dielectric layer, a metal reflection layer, a second dielectric layer and a bottom metal layer which are sequentially stacked from top to bottom; the top metal patch comprises two cross-connected I-shaped patches and a triangular metal branch located in the cross region and having a certain gap with the I-shaped patch; the I-shaped patch comprises a straight arm and end arms located at both ends of the straight arm and having a certain gap with the straight arm; a PIN diode is connected between the straight arm and the end arms; the end arms are connected with each other through a metal feed line, and an isolation resistor is arranged on the metal feed line; the application dynamically controls the reflection phase according to the working state of the diode combination, and has high reflectivity and reflection bandwidth and small loss.

This invention relates to the field of power transformer protection technology, and discloses a transformer DC bias suppression system and method. The method includes collecting subway operation, power grid structure, and soil geological parameters; establishing a dynamic calculation model based on these parameters to generate distribution data of rail potential, stray current, and ground potential; constructing a bias assessment model to calculate the dynamic DC current flowing through the transformer neutral point and the excitation current distortion; using a random forest algorithm for evaluation, outputting a quantitative impact level and a set of key factors; and based on this level, key factors, and transformer grounding method, formulating a suppression strategy that includes configuration parameters of a silicon carbide PiN diode active suppression device and a grounding optimization scheme. This invention achieves accurate assessment and targeted suppression of DC bias problems caused by subways.

This application belongs to the field of microwave engineering, specifically relating to a dual-polarization, reconfigurable, stealthy, and transparent integrated frequency selective surface and radome. The frequency selective surface consists of a three-layer structure: an adjustable FSS layer, an adjustable impedance layer, and a non-adjustable impedance layer. A PIN diode is loaded in the adjustable layer, while a resistor is loaded in the impedance layer. A spiral resonator and an interdigital capacitor resonator are used in the non-adjustable and adjustable impedance layers, respectively. Metal structures arranged in the x and y directions are placed on both sides of the adjustable impedance layer to achieve dual polarization. The adjustable FSS layer forms a transmission window and has reconfigurable functionality. Utilizing the PIN diode and multi-layer structure design, the switching between transmission and absorption functions in the X-band is achieved, realizing a stealthy and transparent integrated design. Transmission and absorption modes can be switched in the X-band, achieving integrated stealth functionality. The radome, through this frequency selective surface, possesses both transmission and absorption capabilities and reconfigurable characteristics.

This application discloses a light sensor and a related time-of-flight distance measuring system. The light sensor includes a semiconductor substrate, having a first surface and a second surface; a photodiode, disposed in the semiconductor substrate and adjacent to the first surface, wherein the photodiode is configured to sense light to generate charges; a first floating diffusion region, disposed in the semiconductor substrate and adjacent to the first surface, and configured to collect charges during a sampling operation; a gate, disposed on the semiconductor substrate, and configured to selectively control the charges to enter the first floating diffusion region; and PIN diode, disposed on the photodiode, wherein the PIN diode at least partially overlaps with the photodiode, when viewed from a top view.

The invention relates to an LTCC (Low Temperature Co-Fired Ceramic)-based switch type band-pass filter. The filter comprises a multi-layer LTCC substrate, a resonator, a switching circuit and a control circuit are packaged into a whole through a three-dimensional integration technology, and the multi-layer LTCC substrate is formed by vertically stacking and sintering a plurality of layers of ceramic green sheets; the number of the resonators is at least two, the adjacent resonators realize electromagnetic coupling through a rectangular coupling window, and the tail ends of the resonators are connected to a bottom layer grounding plane through metalized through holes; the switching circuit comprises a plurality of PIN diodes, the diodes are embedded between the fourth layer and the fifth layer of the LTCC by flip-chip bonding, the anodes are connected with the control line through through holes, and the cathodes are directly grounded; the control circuit comprises a coplanar waveguide and a high-frequency choking coil, and the coplanar waveguide is connected with the high-frequency choking coil in series. The switch and the filter are integrally packaged, and the size is smaller than 5 mm * 3 mm * 1 mm; the switching state insertion loss is less than or equal to 2dB, and the turn-off isolation is greater than or equal to 30dB; lTCC packaging is resistant to high temperature and vibration, and is suitable for severe environments.

The application provides a multi-bit semiconductor memory unit, a memory array and an operating method thereof, wherein the multi-bit semiconductor memory unit comprises a pinned diode, a control transistor and a floating diffusion region, and the pinned diode is used for storing charges; wherein the pinned diode is composed of an N-well region and a P-type surface doping region of a photodiode, or composed of a P-well region and an N-type surface doping region of a photodiode. In the application, the N-well region of the photodiode or the P-well region of the photodiode is used as a storage charge unit. In the multi-bit semiconductor memory unit provided by the application, the amount of charges that can be stored by the storage unit is determined by the amount of dopants, and therefore the storage amount is controllable.

The application provides a preparation method of a PIN limiter based on a silicon-based PIN diode and the PIN limiter, and the method comprises the following steps: preparing a multistage PN junction on a silicon wafer substrate to obtain an N+ layer, a plurality of P+ layers and a plurality of I layer regions; preparing an upper electrode on the upper surface of each P+ layer; preparing a lower electrode on the lower surface of the N+ layer; preparing a first passivation layer on the upper surface of the N+ layer; etching a plurality of grooves to the N+ layer on the upper surface of the first passivation layer to prepare a plurality of ground pads based on the plurality of grooves; preparing an insulating dielectric layer on the upper surface of the first passivation layer; performing windowing on the upper surface of the insulating dielectric layer to form a plurality of openings; preparing a preset peripheral circuit on the upper surface of the insulating dielectric layer; and performing gold plating treatment in the plurality of openings to electrically connect the plurality of upper electrodes and the plurality of ground pads with the preset peripheral circuit. The single-chip preparation method is adopted, so that the prepared PIN limiter based on the silicon-based PIN diode is small in size and high in integration.

The invention relates to the technical field of radio frequency devices, in particular to an amplitude limiter circuit structure integrated with a filtering function by a gallium arsenide process, and the circuit sequentially comprises a 50-ohm microstrip input matching section, a first-stage amplitude limiting filtering unit, a second-stage amplitude limiting filtering unit and an output matching section along a main transmission line, in the first stage, three forward PIN diodes and three reverse PIN diodes are stacked and connected to a main circuit in parallel, high power tolerance and symmetrical amplitude limiting capacity are achieved, and two low-frequency transmission zero points are formed by fusing a micro-strip grounding branch knot and an MIM capacitor resonator; in the second stage, two anti-parallel PIN diodes are matched with a grounding inductor to form a third transmission zero point, three groups of resonant structures are integrated, six transmission zero points are introduced, the filtering performance in a 12-18GHz frequency band is remarkably enhanced, a PIN diode parasitic capacitor and a microstrip inductive structure are skillfully utilized by the circuit to cooperatively realize filtering, extra passive elements are not needed, and the cost is low. The method is suitable for integrated protection of sensitive devices in a high-frequency radar and communication system.

In one aspect, a semiconductor device is provided, comprising: first and second parallel multilayer active regions, each multilayer active region comprising at least one lower semiconductor layer and at least one upper semiconductor layer stacked over the at least one lower semiconductor layer; and a PIN diode structure including: an epitaxial first lower semiconductor body disposed along a first portion of the first active region and an epitaxial second lower semiconductor body disposed along a second portion of the second active region directly opposite the first portion; an epitaxial first upper semiconductor body arranged along the first portion and an epitaxial second upper semiconductor body arranged along the second portion; and an epitaxial intermediate semiconductor body disposed between the first and second active regions.

The invention relates to a broadband lightweight easy-to-deploy 1-bit programmable metasurface unit working in a P wave band. The unit comprises a programmable metasurface assembly; the programmable metasurface assembly comprises a phase regulation and control structure, a supporting structure and a reflection structure. The phase regulation and control structure comprises a reflection patch, an upper dielectric substrate, a bias circuit, a metal via hole structure and a PIN diode. The reflecting patch and the biasing circuit are conducted based on a metal via hole structure; linear segmentation grooves are distributed in the center of the reflection patch in the direction perpendicular to the electric field. The PIN diode is loaded to the reflection patch and is located at the central position of the linear segmentation groove; and the bias circuit is used for isolating an alternating current signal and providing bias voltage, and adjusting the on-off state of the PIN diode based on the bias voltage to realize 0-degree and 180-degree reflection phase regulation and control. According to the scheme, a large number of electronic phase shifters or T / R assemblies do not need to be used, the cost is lower, and the performance is better.

The application discloses a low-profile slot type frequency reconfigurable antenna, comprising: a full-metal reflection baffle, an upper layer dielectric substrate and a lower layer dielectric substrate arranged in sequence; the full-metal reflection baffle is located on one side of the upper surface of the upper layer dielectric substrate; the upper surface of the upper layer dielectric substrate is provided with a first metal patch and a second metal patch; the upper surface of the lower layer dielectric substrate is printed with a feeding structure, and the lower surface is printed with two metal ground plates; the two metal ground plates are respectively provided with grooves, two groups of PIN diodes connected with the two grooves are arranged in the grooves, the conduction directions of the two groups of PIN diodes are opposite, and the two metal ground plates are electrically connected with an external single-chip microcomputer through a direct-current feeding line structure. In the application, the PIN diode is used as an electric control element, the response speed is improved, one group of voltages can be used to control the working state of the antenna through the two groups of PIN diodes placed in opposite directions, the complexity of the structure is reduced, the complexity of the control system is reduced, and the cost of the antenna is reduced.

The invention relates to the technical field of wireless communication, and particularly discloses a dual-band directional diagram reconfigurable antenna based on multimode regulation and control and a control method.The antenna comprises a substrate, a radiation unit, a feed unit and a reconfigurable control module, the radiation unit is etched in the center of the surface of the substrate, a first rectangular groove is formed in the center of the radiation unit, and a second rectangular groove is formed in the center of the feed unit; the upper and lower sides of the first rectangular groove are symmetrically provided with second rectangular grooves on the radiation unit, and the tail ends of the second rectangular grooves are provided with circular grooves. The reconfigurable control module comprises a plurality of PIN diodes, a short-circuit pin assembly and a bias circuit, the bias circuit is used for controlling the on and off states of the PIN diodes, one end of each PIN diode is connected with the short-circuit pin assembly, and the other end of each PIN diode is connected with the radiation unit. According to the dual-band directional diagram reconfigurable antenna based on multi-mode regulation and control and the control method, dual-band four-mode work is achieved through a single feed structure, the multi-scene requirements of a wireless body area network are met, the performance is reliable, and integration is easy.

The invention discloses a high-cut-off transflective reconfigurable skin which comprises a plurality of identical and periodically arranged reconfigurable metasurface units, and each reconfigurable metasurface unit comprises glass fiber reinforced plastic, a first reconfigurable layer, a first foam layer, a second metal mesh layer, a second foam layer and a third metal layer which are sequentially arranged from top to bottom. The first reconfigurable layer is of a multi-layer structure and comprises a first annular metal patch, a first dielectric substrate, a second staggered cross-shaped hole type metal patch, a second dielectric substrate, a third inclined rectangular metal offset line, two plated-through holes, four PIN diodes and two inductors, all of which are sequentially stacked. When the radio frequency front-end antenna is in a wave-transparent state, electromagnetic waves can pass through the skin with relatively low insertion loss during incidence, and the receiving / transmitting performance of the radio frequency front-end antenna is not influenced; when the antenna is in a shielding state, high-power attack electromagnetic waves are incident, and the skin can protect the antenna from being influenced.