743 results about "PIN diode" patented technology

Pushbroom and flash lidar operations outside the visible spectrum, most preferably in near-IR but also in IR and UV, are enabled by inserting—ahead of a generally conventional lidar receiver front end—a device that receives light scattered from objects and in response forms corresponding light of a different wavelength from the scattered light. Detailed implementations using arrays of discrete COTS components—most preferably PIN diodes and VCSELs, with intervening semicustom amplifiers—are discussed, as is use of a known monolithic converter. Differential and ratioing multispectral measurements, particularly including UV data, are enabled through either spatial-sharing (e. g. plural-slit) or time-sharing.

A multiple frequency band antenna includes a dipole antenna (4a), which is formed of two dipole antenna elements (8a, 10a). Two extension elements (24a, 26a) extend outward from respective ones of opposed outer ends of the dipole antenna (4a). The length of the dipole antenna (4a) is determined to make the multiple frequency band antenna capable of receiving radio waves in the UHF band, and the sum of the lengths of the dipole antenna (4a) and the extension elements (24a, 26a) is determined to make the multiple frequency band antenna capable of receiving radio waves in the VHF band. PIN diodes (28a, 34a) are connected between the respective extension elements (24a, 26a) and the respective outer ends of the dipole antenna (4a). When a radio wave in the UHF band is to be received, a control unit (180) places the diodes (28a, 34a) selectively in a state in which both are opened, a state in which one of the diodes (28a) is closed while the other (34a) is opened, and a state in which the one diode (28a) is opened while the other (34a) is closed.

Embodiments of the invention generally relate to the field of semiconductor devices, and more specifically to fin-based junction diodes. A portion of a doped semiconductor fin may protrude through a first doped layer. An intrinsic layer may be disposed on the protruding semiconductor fin. A second semiconductor layer may be disposed on the intrinsic layer, thereby forming a PIN diode compatible with FinFET technology and having increased junction area.

A high-power PIN diode switch for use in applications such as plasma processing systems is described. One illustrative embodiment comprises an input terminal; an output terminal; and first and second transmission-line elements connected in parallel to the input and output terminals, each of the first and second transmission-line elements including a thermoconductive dielectric substrate and a microstrip line disposed on the thermoconductive dielectric substrate, the microstrip line including a plurality of substantially parallel sections that are magnetically coupled, electrically connected in series, and arranged so that electrical current flows in substantially the same direction in adjacent substantially parallel sections to mutually reinforce the magnetic fields associated with the adjacent substantially parallel sections.

A frequency variable filter in which both the frequency of an attenuation pole and the attenuation bandwidth can be varied. In the frequency variable filter, two serial resonance sections composed of resonators and resonance capacitors are electrically connected to each other via a capacitor. The respective resonator in each of the serial resonance sections is electrically connected in parallel with a corresponding serial circuit composed of a frequency shifting capacitor and a PIN diode. A coupling capacitor electrically connects the junctions defined respectively between the frequency shifting capacitor and the PIN diode in each of the serial circuits.

An RF switch includes first and second diodes characterized by an intrinsic region. Pin diodes and nip diodes are examples of such diodes with intrinsic regions. The diodes are stacked with facing first connections. A bias conductor extends from the first connections.

The invention discloses a method for monolithic integration of active devices within passive semiconductor waveguides and the application of this method for use in InP-based planar wavelength division multiplexing components of optical communication systems. The epitaxial device is grown in a single run and comprises a number of layers, such that the lower part of the structure acts as a single mode passive waveguide while the upper part of the structure contains a planar PIN diode. The PIN structure is present only in the active waveguide portion and absent in all the passive waveguide portions. The active and passive waveguide portions have substantially similar guiding properties with the exception of a mode tail above a top surface of the passive waveguide portion within the active waveguide portion. As a result, an optical signal portion penetrates the I-layer of the PIN structure and interacts with semiconductor material therein for actively affecting an intensity of the optical signal with no substantial changes in guiding properties of the semiconductor waveguide. Embodiments of invention in the form of monolithically integrated waveguide photodetector, electro-absorptive attenuator and semiconductor optical amplifier are disclosed in terms of detailed epitaxial structure, layout and performance characteristics of the device.

High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.

A high power PIN diode single pole double throw (SPDT) switch for use in radar systems transmitting at over 50 watts of power. These systems require a switch that will provide adequate isolation for the sensitive amplifier circuits in the receiver subsystem of the radar from the high power transmit pulses in the event there is a bias failure such that the PIN diodes are at zero bias. By utilizing one single pole single throw (SPST) switch assembly between the transmitter and the antenna and at least two SPST switch assemblies between the antenna and the receiver, this isolation is achieved.

An antenna array may include an antenna element configured to receive an RF signal. A PIN diode may selectively couple the antenna element to an RF source. Biasing the PIN diode may cancel the received RF signal at a stub coupled to the diode thereby reducing stray capacitance of the PIN diode. A method for switching antenna elements is also disclosed. A PIN diode coupled to an antenna element is biased thereby reflecting the received RF signal out-of-phase within a stub such that the signal is canceling and stray capacitance of the PIN diode is reduced.

A new method to form an integrated circuit device is achieved. The method comprises forming a dielectric layer overlying a semiconductor substrate. An intrinsic semiconductor layer is formed overlying the dielectric layer. The intrinsic semiconductor layer is patterned. A p+ region is formed in the intrinsic semiconductor layer. An n+ region is formed in the intrinsic semiconductor layer. The p+ region and said n+ region are laterally separated by an intrinsic region to thereby form a PIN diode device. A source region and a drain region are formed in the semiconductor substrate to thereby complete a MOSFET device. The PIN diode device is a gate electrode for the MOSFET device.