2695 results about "Electron hole" patented technology

An organic light-emitting device comprises an anode, a cathode and an organic layer formed between the anode and the cathode, and the organic layer comprises a hole injection layer, a hole transmission area, an electron blocking layer, a light-emitting area and an electron transmission area. The hole transport region comprises a first material and a second material, the first material and the second material are sequentially evaporated to form two hole transport layers, and the first material is selected from a compound shown in the formula 1; and the second material is selected from a compound shown in a formula 2. According to the invention, the first material with a high refractive index is used as the first hole transport layer, the second material with a low refractive index is used as the second hole transport layer, and the structures of the first material and the second material are respectively limited at the same time. The invention overcomes the limitation of a single material or a simple mixed material in the aspects of hole transport and luminous efficiency. .

The invention provides a vertical structure ultraviolet photoelectric detector and a preparation method thereof. The ultraviolet photoelectric detector is of a vertical structure, the design facilitates light absorption of the ultraviolet photoelectric detector, the light utilization rate of the ultraviolet photoelectric detector is improved, and compared with a horizontal structure, the transmission distance is shortened, and the cost is low; the ultraviolet photoelectric detector provided by the invention has a relatively high switching ratio of light and dark current and relatively small dark current, and also has a very high response speed under the condition of keeping the switching ratio of light and dark current and the dark current; a PN junction is formed between the nickel oxide hole transport layer and the beta-phase gallium oxide single crystal, so that the ultraviolet photoelectric detector has self-driving performance; in the manufacturing process, the substrate is used as a supporting frame, and the extraction electrode is packaged in one step through the conductive adhesive tape, so that 3-5 photoetching steps of a traditional horizontal structure are omitted, the process is simplified, and the process manufacturing is simpler.

The invention discloses a magnetic visible light photocatalyst ZnFe2O4 / MXene as well as a preparation method and application thereof, and belongs to the technical field of photocatalytic materials. According to the specific technical scheme, the preparation method comprises the following steps: fully dissolving a zinc source and an iron source in a solvent under the ultrasonic action, adding a morphology regulator, and preparing magnetic ZnFe2O4 through a hydrothermal method; then a two-dimensional material MXene with high conductivity is introduced to promote separation and migration of ZnFe2O4 photo-induced electrons and holes and inhibit compounding of the ZnFe2O4 photo-induced electrons and holes, so that the photocatalytic efficiency is improved, and the magnetic visible light photocatalyst ZnFe2O4 / MXene is prepared. The prepared photocatalyst is easy to recover, has the advantage of rapidly degrading organic pollutants, and has a good application prospect in the aspect of treatment of organic wastewater such as dyeing wastewater and medical wastewater.

The invention discloses a doped material based on a hexagonal boron nitride / titanium dioxide heterojunction and a preparation method thereof. According to the material, a heterojunction is formed by hexagonal boron nitride and titanium dioxide, and the light absorption performance, the carrier mobility and the photocatalytic efficiency are optimized by doping a nitrogen element, an iron element and a fluorine element; wherein the doped nitrogen element can reduce a band gap by introducing a defect energy level, and broaden a light absorption range to a visible light region and an infrared light region; the doped iron element can promote carrier separation by introducing an intermediate energy level; the doped fluorine element can inhibit carrier recombination by reducing surface defects. The light absorption efficiency of the material in the ultraviolet light range can be improved by constructing the layered # imgabs0 # heterojunction composite material, and the migration rate of electrons and holes can be improved by doping the N element, the Fe element and the F element in the # imgabs1 #, so that the oxidation-reduction reaction is promoted, and reference significance is provided for further improving the application effect of a photocatalyst in sewage treatment.

The invention relates to the technical field of semiconductor devices, in particular to a low-working-current-density green light Micro-LED epitaxial structure and a preparation method thereof. The epitaxial structure comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer and a P-type semiconductor layer. The electron blocking layer is not arranged on the multi-quantum-well light-emitting layer, the multi-quantum-well light-emitting layer comprises four sub-layers including a first light blue light multi-quantum-well layer, a second blue light multi-quantum-well layer, a third green light multi-quantum-well layer and a fourth light blue light multi-quantum-well layer, and the In component content in the third green light multi-quantum-well layer is larger than that in other layers. The third cyan light multi-quantum well layer is a main light-emitting unit and is not provided with an electron blocking layer, so that the blocking effect on hole injection can be eliminated, the hole injection efficiency of the P-type semiconductor layer is remarkably improved, and the matching degree of electron hole concentration in a multi-quantum well light-emitting layer region is improved.

The invention discloses a multicolor photoelectric response synaptic device and a preparation method thereof. The multicolor photoelectric response synaptic device is of a multi-layer structure. The multilayer structure comprises a transparent conductive electrode layer, a hole transport material layer, a lead-free perovskite layer, an electron transport material layer, an organic semiconductor charge transfer compound layer and a metal electrode layer in sequence along the light incidence direction. The preparation method comprises the steps of preparing the transparent conductive electrode layer; sequentially preparing a hole transport material layer, a lead-free perovskite layer, an electron transport material layer and an organic semiconductor charge transfer compound layer on the transparent conductive electrode layer through a spin coating method; and preparing the metal electrode layer on the organic semiconductor charge transfer compound layer through vacuum evaporation. The multicolor photoelectric response synaptic device is reasonable in structural design, can realize ultraviolet-visible-near infrared multicolor photoelectric synaptic function simulation, can realize a color identification function on red light, green light and blue light in a visible light wave band, and has a good application prospect.

The invention relates to the technical field of preparation of organic photoelectric materials, in particular to a boron-nitrogen compound and an organic electroluminescent device comprising the same. The boron-nitrogen compound disclosed by the invention has good electron and hole receiving capability, and interaction among luminescent molecules can be effectively inhibited by introducing a large-steric-hindrance double-spiro group. Specifically, the boron-nitrogen compound provided by the invention is used as a functional layer, especially as an organic electroluminescent device manufactured by a luminescent layer, the current efficiency is improved, the efficiency of the device is greatly improved, and the service life of the device is greatly prolonged. Therefore, after most electrons and holes are compounded, energy is effectively transferred to the boron-nitrogen compound, so that high luminous efficiency is realized.

Disclosed in the disclosure are a light-emitting device and a preparation method therefor. The light-emitting device includes a positive electrode, a hole transport layer, a light-emitting layer, and a negative electrode, which are arranged in a stacked manner.

The invention discloses an aeration type water treatment device for catalytic degradation of pollutants based on triboelectrification, and belongs to the field of sewage and wastewater treatment. The lower portion is of a hollow cone structure, and the upper portion is of a cylinder structure. Positive and negative friction particles with spherical structures are placed in the device, the built-in rotatable aeration device can rotate and uniformly distribute gas under the action of gas flow, a gas-liquid-solid three-phase vortex flow is formed in combination with the rotation action of the stirring paddle, the friction particles generate high-frequency collision to generate an electrification effect, and the gas-liquid-solid three-phase vortex flow is formed. Hydroxyl free radicals (. OH) and superoxide free radicals (. O2-) are generated, and organic pollutants are efficiently degraded. The externally added magnetic field can inhibit electron-hole recombination. The device can realize innocent treatment of toxic and harmful wastewater, and has better practical and economic values.

The present invention relates to the technical field of photoelectric devices, in particular to a self-assembled monomolecular layer material based on a conjugated linker group, a preparation method therefor, and a solar cell. The chemical structural general formula of said self-assembled monomolecular layer material is shown as (1), wherein an electron donor is one of electron-rich groups and derivatives thereof, and L is a conjugated linker group. The introduction of the conjugated linker group into the self-assembled monomolecular layer material to replace a non-conjugated alkyl linker group can effectively achieve electron delocalization, thereby enhancing the intrinsic stability and hole extraction and transport capability of molecules in monomolecular self-assembled layers. In addition, the rigid structure thereof remarkably improves the degree of order and the density of molecular arrangement of monomolecular self-assembled layers. Moreover, the self-assembled monomolecular layer material can form dense monomolecular self-assembled layers on the surfaces of conductive substrates, thereby improving interface contact and passivating interface defects; and said material can form dipoles on the surfaces of the conductive substrates, thereby improving the surface work function and promoting hole transport.

The invention discloses a red light Micro light emitting diode epitaxial wafer and a preparation method thereof. The epitaxial wafer comprises a GaAs substrate, an N-type layer, a multi-quantum well active layer and a P-type layer which are sequentially arranged from bottom to top, the multi-quantum well active layer comprises a plurality of AlGaInP quantum well layers and quantum barrier layers which are alternately arranged, a hole injection layer is inserted between at least part of quantum well structures, and the hole injection layer is composed of a first N-type doped sub-layer, a P-type doped sub-layer and a second N-type doped sub-layer which are connected in sequence; the materials of the three sub-layers are (Al < x > Ga < 1-x >) < 0.5 > In < 0.5 > P (x is greater than or equal to 0.5 and less than or equal to 0.9), and the doping concentration is in gradient distribution along the thickness direction. By introducing the N-P-N structure hole injection layer, the hole injection efficiency is improved, electron leakage and Mg diffusion are inhibited, and the luminous efficiency of the red light Micro LED is remarkably improved.

The invention provides a positive quantum dot light-emitting diode and a preparation method thereof, and belongs to the technical field of photoelectric materials. The invention provides a positive quantum dot light-emitting diode. The positive quantum dot light-emitting diode comprises an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode from bottom to top, the electron transport layer is a ZnMgO thin film modified by halogen amine salt. According to the invention, the ZnMgO thin film is modified by using the halogen amine salt, so that the conduction band energy level of the ZnMgO electron transport layer can be moved upwards, the interface potential barrier between the electrode and the electron transport layer is increased, excessive electron injection can be blocked, and the carrier injection balance in the device is promoted. Meanwhile, amino cations in the halogen amine salt can passivate a hydroxyl defect state on the surface of ZnMgO, and high-electronegativity halogen ions enter ZnMgO crystal lattices to passivate oxygen vacancy defects, so that interface exciton quenching is reduced, and the radiation recombination efficiency of the device is improved.

The invention provides a Cu2O-based heterogeneous composite material as well as a preparation method and application thereof. The preparation method comprises the following steps: coating the surface of a Cu2O hollow sphere substrate with a carbon layer, and depositing layered double hydroxides (LDHs) and metal palladium (Pd) nanoparticles on the carbon layer. According to the material, through a Cu2O-carbon layer-LDHs-Pd multistage heterostructure design, space optimization of light absorption, charge transfer and catalytic sites is realized; cu2O-carbon layer-LDHs interface coupling promotes directed migration of photo-induced electron-hole pairs, and the surface plasmon resonance effect of Pd nanoparticles enhances the charge separation efficiency; the LDHs optimizes a charge transfer path through surface oxygen vacancy or metal valence cycle, so that synergistic oxidation of non-free radicals and free radicals is realized, the organic matter degradation efficiency is remarkably improved, the oxidation path is widened, and the performance bottleneck of a single material is broken through.

The invention belongs to the technical field of immunoassay and biosensing, and provides a novel construction mode of a heterojunction dual-photoelectrode photoelectric sensing strategy and a preparation method of an in-situ heterojunction MIO photocathode. The invention relates to a preparation method of a heterojunction dual-photoelectrode type photoelectrochemical sensor based on multi-ball cascade DNA reaction amplification. Specifically, the design is composed of an In2O3 / CdS photoanode and an in-situ formed MIL-68 / In2O3 (MIO) photocathode. The heterojunction dual-photoelectrode sensing strategy effectively prolongs an electron-hole transmission path, enhances photo-generated charge separation, and realizes' super-open 'PEC signal output, thereby providing a steady baseline for signal conversion. Meanwhile, a multi-sphere cascade DNA reaction is combined to output a three-dimensional DNA net structure to provide a large number of sites for embedding of a PEC quenching probe doxorubicin-ferrocene carboxylic acid (DOX-FcCOOH), obvious PEC signal quenching is realized by utilizing the efficient competitive electron transfer capability of the three-dimensional DNA net structure, and finally, a signal conversion system with'opening-super opening-closing 'multistage response characteristics is constructed. The detection of the nucleic acid marker Pax-5a gene of the B cell acute lymphatic leukemia is realized by detecting target objects with different concentrations.

The invention provides a preparation method and application of a quantum dot light-emitting diode based on interface modification, and belongs to the technical field of quantum dot materials. The preparation method comprises the following steps: (1) spin-coating PEDOT: PSS-4083 on ITO (Indium Tin Oxide) to obtain a hole injection layer; (2) spin-coating polyvinyl carbazole on the hole injection layer in the step (1) to obtain a hole transport layer; (3) spin-coating pyridine on the hole transport layer in the step (2) to obtain a modification layer; (4) spin-coating ZnCdS / ZnS quantum dot normal octane on the modification layer in the step (3) to obtain a quantum dot film; and (5) spin-coating an Mg-doped ZnO ethanol solution on the quantum dot film in the step (4), and performing high-vacuum evaporation to obtain the quantum dot light-emitting diode. Compared with an original device, the EQE of the prepared quantum dot light emitting diode is improved by 16.5%, and the highest brightness is improved by 12.5%.

The invention relates to a Bi4TaO8Cl (at) g-C3N4 composite nanomaterial as well as a preparation method and application thereof, and the preparation method comprises the following steps: respectively carrying out calcination pretreatment on BiOCl, Bi2O3 and Ta2O5, uniformly mixing the BiOCl, Bi2O3 and Ta2O5 subjected to calcination pretreatment, adding a molten salt aid, uniformly mixing, calcining, and washing the calcined product to obtain a Bi4TaO8Cl nanosheet; the preparation method comprises the following steps: dispersing g-C3N4 and a Bi4TaO8Cl nanosheet in water, and carrying out ultrasonic compounding, so as to obtain the Bi4TaO8Cl-coated g-C3N4 composite nano material. When the material is subjected to mechanical vibration to generate piezoelectric potential, electrons and holes can be effectively separated under the action of an electric field and migrate in different directions, so that the recombination rate of the electrons and the holes is remarkably reduced, more carriers participate in the reaction of catalyzing to generate H2O2, and the catalytic efficiency is greatly improved.

The invention discloses preparation of a phenanthroline-based covalent organic framework photocatalyst and application of the phenanthroline-based covalent organic framework photocatalyst in photocatalytic production of hydrogen peroxide. According to the method, a hydrogen peroxide production experiment is carried out in a water-oxygen system or a benzyl alcohol-water-oxygen system by taking phenanthroline-based COF as a photocatalyst. According to the invention, through regulation and control of molecular flatness engineering, an electron-rich phenanthroline unit (Phen) anchored by a pyridine expansion plane and electron-deficient triazine (TTA) are integrated into a COF skeleton, and a novel electron donor-acceptor (D-A) type COF is synthesized. The COF has the advantages of proper energy band structure, excellent photo-induced electron and hole separation efficiency, strong D-A interaction, good hydrophilicity and the like, and the efficiency of photocatalytic hydrogen peroxide production reaction within a short time is greatly improved. The invention provides a use method of the COF photocatalyst which is cheap, convenient, rapid, efficient and environment-friendly, and has a potential application prospect.

The invention discloses a perovskite light emitting diode, and belongs to the technical field of perovskite light emitting / displaying. The perovskite light-emitting diode comprises a substrate with a transparent electrode, a ZnO electron transport layer, a perovskite light-emitting layer, a hole transport layer, an anode buffer layer and an anode which are arranged in sequence. Wherein the ZnO electron transport layer is a ZnO film subjected to surface modification by adopting an organic silicon cross-linking agent (containing a functional group capable of reacting with amino to form a cross-linked network structure). The surface of the ZnO film is modified by adopting the organic silicon cross-linking agent containing the functional group which can react with the amino group to form the cross-linked network structure, and the cross-linked network structure is formed through the reaction of the functional group and the amino group, so that the mechanical property of the perovskite film is remarkably improved. The method not only enhances the flexibility and crack resistance of the perovskite thin film, but also effectively improves the binding force between the perovskite thin film and the ZnO substrate, and provides powerful support for wide application of the perovskite material in flexible devices.

The invention discloses a method for measuring the intrinsic carrier mobility of a semiconductor material, and relates to the technical field of semiconductor material performance measurement. The method comprises the following steps: establishing a measurement system for the intrinsic carrier mobility of the semiconductor material; using an optical delay line to continuously change the relative time delay between the probe light and the pump light, obtaining the light intensity of the probe light under the action of the pump light and without the action of the pump light, testing to obtain a transient reflection dynamic spectrum of the semiconductor material, and extracting to obtain a Brillouin oscillation signal; calculating an electron deformation potential, a hole deformation potential and a semiconductor material elastic modulus based on the Brillouin oscillation signal; and calculating the intrinsic carrier (electron and hole) mobility of the semiconductor material based on the electron deformation potential, the hole deformation potential and the elastic modulus of the semiconductor material. Aiming at the lack of a method for experimentally measuring the intrinsic carrier mobility of a material at present, the measurement method disclosed by the invention fills the blank in the field.

The invention relates to a light-emitting device, a display panel and a display device. The light-emitting device comprises an anode, a cathode, a first light-emitting unit and a second light-emitting unit, wherein the first light-emitting unit and the second light-emitting unit are located between the anode and the cathode; the light-emitting device further comprises at least one charge generation layer, the charge generation layer is located between the first light-emitting unit and the second light-emitting unit, the charge generation layer comprises a P-type charge generation sub-layer and an N-type charge generation sub-layer, and the P-type charge generation sub-layer is located on the side closer to the cathode than the N-type charge generation sub-layer. Wherein the P-type charge generation sub-layer comprises a hole transport material, and a first hole injection material and a second hole injection material which are doped in the hole transport material, and the absolute value of the lowest unoccupied molecular orbital energy level of the second hole injection material is smaller than the absolute value of the lowest unoccupied molecular orbital energy level of the first hole injection material. The driving voltage of the laminated light-emitting device can be reduced, the light-emitting efficiency is improved, transverse electric leakage is improved, and the stability of the device is improved.

The invention discloses a compound containing triazine and spiroanthracene fluorene structures and an organic electroluminescent device thereof, and belongs to the technical field of semiconductor materials. The compound containing the triazine and spiroanthracene fluorene structure is shown as a general formula (1): # imgabs0. The compound containing the triazine and spiroanthracene fluorene structure is applied to an organic thin film layer of an organic electroluminescent device, and is particularly applied to a hole blocking layer in an electron transmission region thin film layer of the organic thin film layer. The compound containing the triazine and spiroanthracene fluorene structure has good stability and good hole blocking capability, and when the compound containing the triazine and spiroanthracene fluorene structure is used as a material of an organic electroluminescent device, the efficiency of the device is remarkably improved, and the service life of the device is remarkably prolonged.

The invention discloses a cascade avalanche multiplication photodiode, wherein a substrate oxide layer is provided on a substrate, and a p-type electrode layer I, a p-type light absorption layer, an electric field regulation layer I, an avalanche multiplication layer I, an n-type transition layer, an electron traveling layer with a low impurity concentration, an electric field regulation layer II, an avalanche multiplication layer II, and an n-type electrode layer are provided on the substrate oxide layer from left to right, wherein the p-type electrode layer II is embedded in the electron traveling layer region with a low impurity concentration, and each layer arranged in sequence on the substrate oxide layer is surrounded by an electric field isolation ring layer, and an intrinsic layer is provided in the outer region of the electric field isolation ring layer, and a p-electrode I is provided on the p-type electrode layer I, a p-electrode II is provided on the p-type electrode layer II, and an n-electrode is provided on the n-type electrode layer. The advantages of the patent are that the structure of the invention avoids the curvature effect, eliminates edge breakdown, improves stability, and realizes multi-stage cascade avalanche multiplication monolithic integration at the same time, obtains a very high stable gain, and effectively suppresses the noise caused by hole avalanches.

The invention discloses a perovskite solar cell based on a fluorine-chlorine synergistic effect. The perovskite solar cell comprises a glass substrate, an electron transport layer, a perovskite light absorption layer, a hole transport layer and a metal electrode which are sequentially stacked, wherein the perovskite light absorption layer is obtained by coating and annealing a perovskite precursor solution containing 3-fluoro-4-chloroaniline iodide. According to the invention, the 2D / 3D perovskite thin film processed by the 3-F-4-ClAnI shows a highly ordered crystal structure, and the photoelectric property of the 2D / 3D perovskite solar cell is obviously improved; and the optimal Pb-I-Pb torsion angle is optimized through the synergistic effect of C-F and C-Cl groups, and the coordination effect of Pb < 2 + > is remarkably enhanced. Compared with the unmodified FAPbI3, the stability of the perovskite thin film device processed by the 3-F-4-ClAnI is obviously enhanced, the non-radiative recombination is effectively inhibited, the interface charge extraction is improved, and the perovskite thin film device has excellent long-term stability at room temperature.

The invention discloses a heterocyclic compound composition and an organic electroluminescent device. Wherein the heterocyclic compound combination comprises a hole injection layer compound and a light-emitting layer compound, the hole injection layer compound is selected from a first compound shown in the formula 1, the light-emitting layer compound contains a bi-component host material and a doping material, the bi-component host material comprises a first host and a second host, and the doping material comprises a second host and a third host. The first main body is selected from a compound shown in a formula 2, the second main body is selected from a compound shown in a formula 3-1 or a formula 3-2, the hole injection material (PD doped material) is matched with the GH bi-component main body material, and meanwhile, the first doped SP is used, so that the prepared device has excellent luminous efficiency and long service life. And meanwhile, by matching with the second doped GD, the luminous efficiency of the device and the device are further improved through the prepared sensitized device. # imgabs0 #, # imgabs1 #, # imgabs2 # and # imgabs3 #.

The invention discloses a hole transport material, a preparation method thereof and a perovskite solar cell, and belongs to the technical field of photovoltaic solar materials. The molecular structural formula of the compound is shown as a formula (I) or a formula (II). According to the invention, a quinoxaline part is used as an electron acceptor for extended conjugate modification, a plurality of single donors such as triphenylamine electron donating groups, dihydroacenaphthene, binaphthyloxy and the like are introduced, the hole transport material with a multi-donor structure is constructed, and the hole transport material adjusts the distribution of HOMO-LUMO, increases charge transfer channels, improves the separation and transport capabilities of charges, and improves the hole transport efficiency. Therefore, the mobility of current carriers is improved. A tert-butyl unit is further introduced to the periphery of the triphenylamine group, the hydrophobic property of tert-butyl reduces the interface energy barrier between the hole transport layer and the perovskite precursor solution, directional growth and defect passivation of perovskite crystals are promoted, and the crystallization quality of the perovskite thin film and the device performance are improved.

The invention relates to the technical field of semiconductor photoelectric detectors, in particular to a gallium oxide-based laminated structure ultraviolet detector and a preparation method thereof. The detector comprises a gallium nitride single crystal substrate, a GaON thin film layer and a beta-Ga2O3 thin film layer which are tightly stacked from bottom to top, and an electron transport layer and a hole blocking layer which are symmetrically arranged on the surface of one side, away from the gallium nitride single crystal substrate, of the beta-Ga2O3 thin film layer, and metal electrodes are arranged on the electron transport layer and the hole blocking layer. The material of the electron transport layer is ZnO, and the material of the hole blocking layer is TiO2. The device has the advantages that the device structure is stable, the response time can reach microsecond magnitude, and the descending time is short; the adverse effect caused by the inherent continuous photoconductive effect of the gallium oxide material is effectively overcome, the internal defects are obviously reduced, and the ultraviolet photoconductive gain is increased while the inherent continuous photoconductive effect of the gallium oxide is inhibited.

The invention discloses a thermal-decay-resistant red light Micro LED epitaxial structure and a preparation method thereof. The epitaxial structure sequentially comprises a substrate layer, an n-type buffer layer, an n-type etching barrier layer, an n-type ohmic contact layer, an n-type limiting layer, a quantum well structure, a p-type spacer layer, a p-type electron barrier layer and a p-type ohmic contact layer from bottom to top. Wherein the quantum well structure is formed by alternating 1-5 pairs of InGaP well layers and three-section type p-type AlGaInP barrier layers, and the three sections of barrier layers adopt gradient energy level design and are all subjected to p-type doping; according to the invention, the problems of carrier loss and low recombination efficiency at high temperature in the prior art are solved by blocking electron overflow through the gradient energy level barrier and supplementing the hole concentration through p-type doping, so that the 85 DEG C external quantum efficiency attenuation rate is less than or equal to 10%, the service life is prolonged to more than 50,000 hours, and the process is compatible with mass production and is suitable for the fields of display, illumination and the like.

The present invention relates to a metal complex having a structure of chemical formula (I). The metal complex is applied to an organic light-emitting device which emits deep red or near-infrared light, and shows a lower driving voltage and higher luminous efficiency, and has greatly prolonged service life. Therefore, the metal complex has the potential of being applied in the field of organic light-emitting devices. Also provided is an organic light-emitting device, including a cathode, an anode, and an organic layer. The organic layer is one or more of a hole injection layer, a hole transport layer, a light-emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer; and at least one layer in the organic layer contains the compound of structural formula (I).

The invention relates to a manganese cadmium sulfur and manganese sulfide heterojunction composite photocatalytic material, which is composed of Mn < 0.7 > Cd < 0.3 > S and MnS. The invention also discloses a preparation method of the manganese-cadmium-sulfur-coated manganese sulfide heterojunction composite photocatalytic material. The preparation method specifically comprises the following steps: preparing the manganese-cadmium-sulfur-coated manganese sulfide heterojunction photocatalytic material through a one-step hydrothermal method; (CH3COO) 2Mn. 4H2O and (CH3COO) 2Cd. 2H2O are added, and the mixture is stirred and dissolved in water; adding the mixture into TAA and stirring for 30 minutes to obtain a fully mixed solution; and carrying out a hydrothermal reaction to obtain the final manganese-cadmium-sulfur-coated manganese sulfide heterojunction photocatalytic material. According to the invention, the photoresponse range is widened through the construction of the heterojunction, the transfer and separation efficiency of photo-induced electron holes is obviously improved, the compounding of photo-induced electron hole pairs is inhibited, and the efficiency of photocatalytic uranium reduction is improved.

The invention relates to the technical field of catalytic materials, and particularly discloses a visible light photocatalyst and a preparation method thereof.The visible light photocatalyst comprises a core layer-shell layer-dynamic regulation and control layer three-stage structure; the core layer is heterojunction nano-particles formed by bismuth vanadate and bismuth oxyiodide, and the bismuth vanadate particles are uniformly dispersed on the surface of the bismuth oxyiodide to form a p-n heterojunction; the molar ratio of bismuth vanadate to bismuth oxyiodide in the core layer is 1: (0.5-2), and the particle size range is 30-80 nm; through an elaborately designed three-level structure and a dynamic regulation and control mechanism, the response efficiency and environmental adaptability of the photocatalyst to visible light are remarkably improved. A built-in electric field is formed by utilizing the energy band matching characteristic of bismuth vanadate and bismuth oxyiodide, so that the separation of photo-induced electron-hole pairs is effectively promoted, and the absorption boundary of visible light is expanded to 650nm.