3965 results about "Electron hole" patented technology

The invention discloses a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode, and relates to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer, an electron blocking layer and a P-type semiconductor layer. The multi-quantum well light-emitting layer comprises a first sub-layer, a second sub-layer, a third sub-layer and a fourth sub-layer which are stacked in sequence, and each of the first sub-layer, the second sub-layer, the third sub-layer and the fourth sub-layer comprises an InGaN quantum well layer and a GaN quantum barrier layer which are periodically and alternately stacked; an electron injection layer is inserted into at least one of the GaN quantum barrier layer of the first sub-layer, the GaN quantum barrier layer of the second sub-layer and the GaN quantum barrier layer of the third sub-layer; and a hole injection layer is inserted into the GaN quantum barrier layer of the fourth sub-layer. By implementing the invention, the electron hole matching degree of the multi-quantum well light-emitting layer can be improved, so that the luminous efficiency of the light-emitting diode is improved.

The invention discloses a Micro-LED epitaxial structure suitable for low working current density and a preparation method thereof, and relates to the technical field of semiconductor devices. The Micro-LED epitaxial structure comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer and a P-type semiconductor layer. The multi-quantum well light-emitting layer comprises a first short-wave multi-quantum well layer, a second long-wave multi-quantum well layer and a third short-wave multi-quantum well layer which are sequentially arranged from bottom to top; the In component in the first short-wave multi-quantum well layer and the In component in the third short-wave multi-quantum well layer are both smaller than the In component in the second long-wave multi-quantum well layer. According to the Micro-LED epitaxial structure, the quality of a multi-quantum well light-emitting layer can be remarkably improved, the matching degree of electron hole concentration in a light-emitting quantum well area is improved, the radiation recombination efficiency of the light-emitting quantum well area is improved, and therefore the lighting effect of a Micro-LED chip under the low working current density is improved, and the service life of the Micro-LED chip is prolonged. The problem that an epitaxial structure of a traditional visible light LED is low in luminous efficiency under the low working current density is solved.

The invention belongs to the field of organic photoelectric materials, and discloses an electroluminescent material and a preparation method and application thereof. The structure of the electroluminescent material is as shown in a formula I: # imgabs0 #. According to the electroluminescent material compound provided by the invention, on the basis of a 9-methyl-9-phenylfluorene group, triarylamine and an aromatic ring are connected through 2 and 4 sites, when the triarylamine group is substituted by aryl, the energy level is relatively low, carrier migration localization is avoided, and a hole transport energy barrier can be reduced, so that the migration rate and the luminous efficiency are improved; triarylamine has excellent hole transport performance, a triarylamine material is used as a light-emitting auxiliary layer, a group with a high triplet state energy level is introduced, the energy range between energy levels can be reduced, and the service life of the device is greatly prolonged.

An organic light-emitting device comprises an anode, a cathode and an organic layer formed between the anode and the cathode, and the organic layer comprises a hole injection layer, a hole transmission area, an electron blocking layer, a light-emitting area and an electron transmission area. The hole transport region comprises a first material and a second material, the first material and the second material are sequentially evaporated to form two hole transport layers, and the first material is selected from a compound shown in the formula 1; and the second material is selected from a compound shown in a formula 2. According to the invention, the first material with a high refractive index is used as the first hole transport layer, the second material with a low refractive index is used as the second hole transport layer, and the structures of the first material and the second material are respectively limited at the same time. The invention overcomes the limitation of a single material or a simple mixed material in the aspects of hole transport and luminous efficiency. .

An organic electroluminescence device includes a first electrode, a hole transport region disposed on the first electrode, an emission layer disposed on the hole transport region, an electron transport region disposed on the emission layer, and a second electrode disposed on the electron transport region. The emission layer includes a polycyclic compound represented by Formula 1 to thereby achieve high luminous efficiency:

The invention relates to the technical field of preparation of organic photoelectric materials, in particular to a boron-nitrogen compound and an organic electroluminescent device comprising the same. The boron-nitrogen compound disclosed by the invention has good electron and hole receiving capability, and interaction among luminescent molecules can be effectively inhibited by introducing a spirocyclic group with large steric hindrance. And the energy transmission performance between a subject and an object or a sensitizer can be improved by the large conjugated spiro structure unit. Specifically, the boron-nitrogen compound provided by the invention is used as a functional layer, especially as an organic electroluminescent device manufactured by a luminescent layer, the current efficiency is improved, the lighting voltage is reduced, and meanwhile, the service life of the device is greatly prolonged. Therefore, after most electrons and holes are compounded, energy is effectively transferred to the boron-nitrogen compound, so that high luminous efficiency is realized.

The invention relates to the technical field of semiconductor photoelectric devices, and particularly discloses a GaN-based compound semiconductor laser element. The GaN-based compound semiconductor laser element sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, and an exciton phonon quantum interference layer is arranged between the upper waveguide layer and the upper limiting layer. The lattice constant distribution of the exciton phonon quantum interference layer has curve distribution of a function y = A + B * lnx + x; the forbidden band width distribution of the exciton phonon quantum interference layer has a function y = C + D * sinx / x2 third quadrant curve distribution; the GaN-based compound semiconductor laser element can solve the abrupt change problems of conductivity jump, capacitance sinking and ideal factor jump at a threshold value, reduce the transmission loss of electron holes, improve the carrier injection uniformity and gain uniformity, and improve the optical power of a laser; and the beam quality factor is improved.

The invention provides a vertical structure ultraviolet photoelectric detector and a preparation method thereof. The ultraviolet photoelectric detector is of a vertical structure, the design facilitates light absorption of the ultraviolet photoelectric detector, the light utilization rate of the ultraviolet photoelectric detector is improved, and compared with a horizontal structure, the transmission distance is shortened, and the cost is low; the ultraviolet photoelectric detector provided by the invention has a relatively high switching ratio of light and dark current and relatively small dark current, and also has a very high response speed under the condition of keeping the switching ratio of light and dark current and the dark current; a PN junction is formed between the nickel oxide hole transport layer and the beta-phase gallium oxide single crystal, so that the ultraviolet photoelectric detector has self-driving performance; in the manufacturing process, the substrate is used as a supporting frame, and the extraction electrode is packaged in one step through the conductive adhesive tape, so that 3-5 photoetching steps of a traditional horizontal structure are omitted, the process is simplified, and the process manufacturing is simpler.

The invention discloses a magnetic visible light photocatalyst ZnFe2O4 / MXene as well as a preparation method and application thereof, and belongs to the technical field of photocatalytic materials. According to the specific technical scheme, the preparation method comprises the following steps: fully dissolving a zinc source and an iron source in a solvent under the ultrasonic action, adding a morphology regulator, and preparing magnetic ZnFe2O4 through a hydrothermal method; then a two-dimensional material MXene with high conductivity is introduced to promote separation and migration of ZnFe2O4 photo-induced electrons and holes and inhibit compounding of the ZnFe2O4 photo-induced electrons and holes, so that the photocatalytic efficiency is improved, and the magnetic visible light photocatalyst ZnFe2O4 / MXene is prepared. The prepared photocatalyst is easy to recover, has the advantage of rapidly degrading organic pollutants, and has a good application prospect in the aspect of treatment of organic wastewater such as dyeing wastewater and medical wastewater.

The invention provides an electroluminescent material composition and an organic electroluminescent device.The electroluminescent material composition comprises a combination of a first organic electroluminescent material and a second organic electroluminescent material, and through structural design and synergistic compounding of the two kinds of organic electroluminescent materials, the organic electroluminescent material composition is prepared. The electroluminescent material composition has excellent photoelectric properties and carrier transport properties, realizes balanced transport of carriers, is used for organic electroluminescent devices, is especially suitable for being used as a main body material of a luminescent layer, regulates injection / transport balance of holes and electrons, prevents a large amount of carriers from being accumulated at an interface, and improves the luminous efficiency of the organic electroluminescent devices. The device has excellent luminous efficiency and stability, the service life of the device is remarkably prolonged, the starting voltage is lower, the comprehensive performance of the device is effectively improved, and the requirements for high-performance materials in current panel and display manufacturing are fully met.

The invention discloses a doped material based on a hexagonal boron nitride / titanium dioxide heterojunction and a preparation method thereof. According to the material, a heterojunction is formed by hexagonal boron nitride and titanium dioxide, and the light absorption performance, the carrier mobility and the photocatalytic efficiency are optimized by doping a nitrogen element, an iron element and a fluorine element; wherein the doped nitrogen element can reduce a band gap by introducing a defect energy level, and broaden a light absorption range to a visible light region and an infrared light region; the doped iron element can promote carrier separation by introducing an intermediate energy level; the doped fluorine element can inhibit carrier recombination by reducing surface defects. The light absorption efficiency of the material in the ultraviolet light range can be improved by constructing the layered # imgabs0 # heterojunction composite material, and the migration rate of electrons and holes can be improved by doping the N element, the Fe element and the F element in the # imgabs1 #, so that the oxidation-reduction reaction is promoted, and reference significance is provided for further improving the application effect of a photocatalyst in sewage treatment.

The invention relates to the technical field of semiconductor devices, in particular to a low-working-current-density green light Micro-LED epitaxial structure and a preparation method thereof. The epitaxial structure comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer and a P-type semiconductor layer. The electron blocking layer is not arranged on the multi-quantum-well light-emitting layer, the multi-quantum-well light-emitting layer comprises four sub-layers including a first light blue light multi-quantum-well layer, a second blue light multi-quantum-well layer, a third green light multi-quantum-well layer and a fourth light blue light multi-quantum-well layer, and the In component content in the third green light multi-quantum-well layer is larger than that in other layers. The third cyan light multi-quantum well layer is a main light-emitting unit and is not provided with an electron blocking layer, so that the blocking effect on hole injection can be eliminated, the hole injection efficiency of the P-type semiconductor layer is remarkably improved, and the matching degree of electron hole concentration in a multi-quantum well light-emitting layer region is improved.

The invention relates to the technical field of photoelectricity, and discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and an LED, the light-emitting diode epitaxial wafer comprises a substrate, and the substrate is sequentially provided with a buffer layer, a non-doped GaN layer, an N-type GaN layer, a stress release layer, a multi-quantum well layer, an electron blocking layer, and a P-type GaN layer; the multi-quantum well layer comprises a high-barrier multi-quantum well layer, a middle-barrier multi-quantum well layer, a low-barrier multi-quantum well layer and a low-barrier end multi-quantum well layer which are stacked in sequence. According to the light-emitting diode epitaxial wafer provided by the invention, the hole injection efficiency of the P-type semiconductor material can be improved, the phenomenon of insufficient hole concentration in the multi-quantum well layer is improved, and the matching degree of electron hole concentration in the multi-quantum well layer is improved, so that the radiation recombination efficiency in the multi-quantum well layer is improved, and the brightness and the lighting effect of an LED device are finally improved.

The invention relates to the technical field of photocatalysis, in particular to a defect-state titanium dioxide supported catalyst, a preparation method and application of the defect-state titanium dioxide supported catalyst in a reaction for co-converting methane and carbon dioxide. The defect-state titanium dioxide supported catalyst comprises a carrier and metal Au supported on the surface of the carrier; the carrier is a defect-state titanium dioxide nanosheet with oxygen vacancies. According to the invention, the defect-state titanium dioxide nanosheet is used as a carrier, and after metal particles (Au) are loaded, the metal particles are used as capture centers of photo-induced electrons to promote spatial separation of photo-induced electron-hole pairs. In addition, the formed metal-carrier interface site effectively enhances the adsorption and activation of CH4 and CO2 by the photocatalyst. Moreover, the loaded high-electronegativity metal Au can also be used as a coupling site of methyl, so that high-yield C2H6 is obtained, and meanwhile, a corresponding CO product is obtained.

The invention relates to the technical field of preparation of organic photoelectric materials, in particular to a boron-nitrogen compound and an organic electroluminescent device comprising the same. The boron-nitrogen compound disclosed by the invention has good electron and hole receiving capability, and interaction among luminescent molecules can be effectively inhibited by introducing large-steric-hindrance azafluorene / benzfluorene / azabenzfluorene / silafluorene / germanium heterofluorene and other groups. The energy transmission performance between a subject and an object or a sensitizer can be improved by a large conjugated spiro structure unit, an sp2 aza-aromatic ring and other structures. Specifically, the boron-nitrogen compound provided by the invention is used as a functional layer, especially as an organic electroluminescent device manufactured by a luminescent layer, the current efficiency is improved, the lighting voltage is reduced, and meanwhile, the service life of the device is greatly prolonged. Therefore, after most electrons and holes are compounded, energy is effectively transferred to the boron-nitrogen compound, so that high luminous efficiency is realized.

The invention discloses a multicolor photoelectric response synaptic device and a preparation method thereof. The multicolor photoelectric response synaptic device is of a multi-layer structure. The multilayer structure comprises a transparent conductive electrode layer, a hole transport material layer, a lead-free perovskite layer, an electron transport material layer, an organic semiconductor charge transfer compound layer and a metal electrode layer in sequence along the light incidence direction. The preparation method comprises the steps of preparing the transparent conductive electrode layer; sequentially preparing a hole transport material layer, a lead-free perovskite layer, an electron transport material layer and an organic semiconductor charge transfer compound layer on the transparent conductive electrode layer through a spin coating method; and preparing the metal electrode layer on the organic semiconductor charge transfer compound layer through vacuum evaporation. The multicolor photoelectric response synaptic device is reasonable in structural design, can realize ultraviolet-visible-near infrared multicolor photoelectric synaptic function simulation, can realize a color identification function on red light, green light and blue light in a visible light wave band, and has a good application prospect.

The invention relates to the technical field of preparation of organic photoelectric materials, in particular to a boron-nitrogen compound and an organic electroluminescent device comprising the same. The boron-nitrogen compound disclosed by the invention has good electron and hole receiving capability, and interaction among luminescent molecules can be effectively inhibited by introducing a large-steric-hindrance double-spiro group. Specifically, the boron-nitrogen compound provided by the invention is used as a functional layer, especially as an organic electroluminescent device manufactured by a luminescent layer, the current efficiency is improved, the efficiency of the device is greatly improved, and the service life of the device is greatly prolonged. Therefore, after most electrons and holes are compounded, energy is effectively transferred to the boron-nitrogen compound, so that high luminous efficiency is realized.

The invention relates to a K / O co-doped and cyano-grafted graphite phase carbon nitride material as well as a preparation method and application thereof. The material comprises three defect types, namely a C-O-C bond formed by a C-N = C bond in an oxygen substituted triazine skeleton, potassium ions existing between layers and cyano groups generated by protonation of amino groups at the edge. According to the material disclosed by the invention, K ions are doped into the g-C3N4 layer to form K-N bridge connection between layers, the material can be used as an electron channel to effectively accelerate electron migration, cyano groups at the edge have relatively strong electron-withdrawing capability and can be used as sites for adsorbing hydrogen ions, and introduced oxygen can be used as active sites for producing H2O2. The three components cooperate with each other to effectively promote transmission of photo-induced electrons and separation of photo-induced electron hole pairs, so that the photocatalytic effect is remarkably improved, and the photocatalyst is an efficient photocatalyst with excellent performance.

Disclosed in the disclosure are a light-emitting device and a preparation method therefor. The light-emitting device includes a positive electrode, a hole transport layer, a light-emitting layer, and a negative electrode, which are arranged in a stacked manner.

Embodiments of the present disclosure provide a photodetector, comprising a waveguide structure, a light limiting structure, and an absorption structure. The waveguide structure extends into the light limiting structure, and a first edge where a first side wall of the waveguide structure is located is tangent to a second edge where a second side wall of the light limiting structure is located. The waveguide structure is used for introducing incident light into the light limiting structure in a direction tangent to the first edge. The introduced light is limited in the light limiting structure for annular transmission by means of total reflection of a side wall of the light limiting structure, and the introduced light is coupled into the absorption structure by means of the light limiting structure. The absorption structure is located on the light limiting structure. The coupled light is limited in the absorption structure in the horizontal direction for annular transmission by means of total reflection of a side wall of the absorption structure, and the coupled light is converted into electrons and holes.

The invention discloses an aeration type water treatment device for catalytic degradation of pollutants based on triboelectrification, and belongs to the field of sewage and wastewater treatment. The lower portion is of a hollow cone structure, and the upper portion is of a cylinder structure. Positive and negative friction particles with spherical structures are placed in the device, the built-in rotatable aeration device can rotate and uniformly distribute gas under the action of gas flow, a gas-liquid-solid three-phase vortex flow is formed in combination with the rotation action of the stirring paddle, the friction particles generate high-frequency collision to generate an electrification effect, and the gas-liquid-solid three-phase vortex flow is formed. Hydroxyl free radicals (. OH) and superoxide free radicals (. O2-) are generated, and organic pollutants are efficiently degraded. The externally added magnetic field can inhibit electron-hole recombination. The device can realize innocent treatment of toxic and harmful wastewater, and has better practical and economic values.

The present invention relates to the technical field of photoelectric devices, in particular to a self-assembled monomolecular layer material based on a conjugated linker group, a preparation method therefor, and a solar cell. The chemical structural general formula of said self-assembled monomolecular layer material is shown as (1), wherein an electron donor is one of electron-rich groups and derivatives thereof, and L is a conjugated linker group. The introduction of the conjugated linker group into the self-assembled monomolecular layer material to replace a non-conjugated alkyl linker group can effectively achieve electron delocalization, thereby enhancing the intrinsic stability and hole extraction and transport capability of molecules in monomolecular self-assembled layers. In addition, the rigid structure thereof remarkably improves the degree of order and the density of molecular arrangement of monomolecular self-assembled layers. Moreover, the self-assembled monomolecular layer material can form dense monomolecular self-assembled layers on the surfaces of conductive substrates, thereby improving interface contact and passivating interface defects; and said material can form dipoles on the surfaces of the conductive substrates, thereby improving the surface work function and promoting hole transport.

The invention discloses a sulfur-rich vacancy ZnIn2S4 at FeNi < 0.48 > S < 1.71 > heterojunction photocatalyst as well as a preparation method and application thereof, and the photocatalyst is a sulfur-rich vacancy ZnIn2S4 at FeNi < 0.48 > S < 1.71 > heterojunction composite material with a hollow structure, which is formed by in-situ growth of a sulfur-vacancy-containing ZnIn2S4 nanosheet on the surface of a FeNi < 0.48 > S < 1.71 > hollow nanosphere. The photocatalyst provided by the invention has a larger specific surface area and a wider light absorption range, and the internal sulfur vacancy as an electron capture center can inhibit the compounding of photo-induced electron-hole pairs. The three-dimensional core-shell hollow sphere structure can reduce the recombination rate of charges, improve the mobility of electrons, show better photocatalytic performance, and have great application prospects in the fields of energy and environment.

The invention discloses a red light Micro light emitting diode epitaxial wafer and a preparation method thereof. The epitaxial wafer comprises a GaAs substrate, an N-type layer, a multi-quantum well active layer and a P-type layer which are sequentially arranged from bottom to top, the multi-quantum well active layer comprises a plurality of AlGaInP quantum well layers and quantum barrier layers which are alternately arranged, a hole injection layer is inserted between at least part of quantum well structures, and the hole injection layer is composed of a first N-type doped sub-layer, a P-type doped sub-layer and a second N-type doped sub-layer which are connected in sequence; the materials of the three sub-layers are (Al < x > Ga < 1-x >) < 0.5 > In < 0.5 > P (x is greater than or equal to 0.5 and less than or equal to 0.9), and the doping concentration is in gradient distribution along the thickness direction. By introducing the N-P-N structure hole injection layer, the hole injection efficiency is improved, electron leakage and Mg diffusion are inhibited, and the luminous efficiency of the red light Micro LED is remarkably improved.

The invention provides a GaN-based alpha particle detector and a preparation method thereof, the GaN-based alpha particle detector comprises a substrate and an epitaxial structure epitaxially formed on the substrate, and the epitaxial structure comprises a multi-quantum well layer. A multi-quantum well layer is introduced, the multi-quantum well layer absorbs incident energy of alpha particles and correspondingly excites a large number of electron-hole pairs, and the electron-hole pairs are limited in quantum wells by the quantum confinement effect of the multi-quantum well layer, so that not only is the loss of electron-hole pair diffusion and recombination reduced, but also the service life of current carriers is prolonged, and the performance of the device is improved. The carrier collection efficiency of the alpha particle detector is greatly improved, and more electron-hole pairs can be collected and converted into electric signals to be output, so that the performance of the alpha particle detector is improved.

The invention provides a positive quantum dot light-emitting diode and a preparation method thereof, and belongs to the technical field of photoelectric materials. The invention provides a positive quantum dot light-emitting diode. The positive quantum dot light-emitting diode comprises an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode from bottom to top, the electron transport layer is a ZnMgO thin film modified by halogen amine salt. According to the invention, the ZnMgO thin film is modified by using the halogen amine salt, so that the conduction band energy level of the ZnMgO electron transport layer can be moved upwards, the interface potential barrier between the electrode and the electron transport layer is increased, excessive electron injection can be blocked, and the carrier injection balance in the device is promoted. Meanwhile, amino cations in the halogen amine salt can passivate a hydroxyl defect state on the surface of ZnMgO, and high-electronegativity halogen ions enter ZnMgO crystal lattices to passivate oxygen vacancy defects, so that interface exciton quenching is reduced, and the radiation recombination efficiency of the device is improved.

The invention provides a Cu2O-based heterogeneous composite material as well as a preparation method and application thereof. The preparation method comprises the following steps: coating the surface of a Cu2O hollow sphere substrate with a carbon layer, and depositing layered double hydroxides (LDHs) and metal palladium (Pd) nanoparticles on the carbon layer. According to the material, through a Cu2O-carbon layer-LDHs-Pd multistage heterostructure design, space optimization of light absorption, charge transfer and catalytic sites is realized; cu2O-carbon layer-LDHs interface coupling promotes directed migration of photo-induced electron-hole pairs, and the surface plasmon resonance effect of Pd nanoparticles enhances the charge separation efficiency; the LDHs optimizes a charge transfer path through surface oxygen vacancy or metal valence cycle, so that synergistic oxidation of non-free radicals and free radicals is realized, the organic matter degradation efficiency is remarkably improved, the oxidation path is widened, and the performance bottleneck of a single material is broken through.

The invention belongs to the technical field of immunoassay and biosensing, and provides a novel construction mode of a heterojunction dual-photoelectrode photoelectric sensing strategy and a preparation method of an in-situ heterojunction MIO photocathode. The invention relates to a preparation method of a heterojunction dual-photoelectrode type photoelectrochemical sensor based on multi-ball cascade DNA reaction amplification. Specifically, the design is composed of an In2O3 / CdS photoanode and an in-situ formed MIL-68 / In2O3 (MIO) photocathode. The heterojunction dual-photoelectrode sensing strategy effectively prolongs an electron-hole transmission path, enhances photo-generated charge separation, and realizes' super-open 'PEC signal output, thereby providing a steady baseline for signal conversion. Meanwhile, a multi-sphere cascade DNA reaction is combined to output a three-dimensional DNA net structure to provide a large number of sites for embedding of a PEC quenching probe doxorubicin-ferrocene carboxylic acid (DOX-FcCOOH), obvious PEC signal quenching is realized by utilizing the efficient competitive electron transfer capability of the three-dimensional DNA net structure, and finally, a signal conversion system with'opening-super opening-closing 'multistage response characteristics is constructed. The detection of the nucleic acid marker Pax-5a gene of the B cell acute lymphatic leukemia is realized by detecting target objects with different concentrations.

The invention provides a preparation method and application of a quantum dot light-emitting diode based on interface modification, and belongs to the technical field of quantum dot materials. The preparation method comprises the following steps: (1) spin-coating PEDOT: PSS-4083 on ITO (Indium Tin Oxide) to obtain a hole injection layer; (2) spin-coating polyvinyl carbazole on the hole injection layer in the step (1) to obtain a hole transport layer; (3) spin-coating pyridine on the hole transport layer in the step (2) to obtain a modification layer; (4) spin-coating ZnCdS / ZnS quantum dot normal octane on the modification layer in the step (3) to obtain a quantum dot film; and (5) spin-coating an Mg-doped ZnO ethanol solution on the quantum dot film in the step (4), and performing high-vacuum evaporation to obtain the quantum dot light-emitting diode. Compared with an original device, the EQE of the prepared quantum dot light emitting diode is improved by 16.5%, and the highest brightness is improved by 12.5%.

The invention relates to a Bi4TaO8Cl (at) g-C3N4 composite nanomaterial as well as a preparation method and application thereof, and the preparation method comprises the following steps: respectively carrying out calcination pretreatment on BiOCl, Bi2O3 and Ta2O5, uniformly mixing the BiOCl, Bi2O3 and Ta2O5 subjected to calcination pretreatment, adding a molten salt aid, uniformly mixing, calcining, and washing the calcined product to obtain a Bi4TaO8Cl nanosheet; the preparation method comprises the following steps: dispersing g-C3N4 and a Bi4TaO8Cl nanosheet in water, and carrying out ultrasonic compounding, so as to obtain the Bi4TaO8Cl-coated g-C3N4 composite nano material. When the material is subjected to mechanical vibration to generate piezoelectric potential, electrons and holes can be effectively separated under the action of an electric field and migrate in different directions, so that the recombination rate of the electrons and the holes is remarkably reduced, more carriers participate in the reaction of catalyzing to generate H2O2, and the catalytic efficiency is greatly improved.