1464 results about "Electron hole" patented technology

An organic light-emitting device comprises an anode, a cathode and an organic layer formed between the anode and the cathode, and the organic layer comprises a hole injection layer, a hole transmission area, an electron blocking layer, a light-emitting area and an electron transmission area. The hole transport region comprises a first material and a second material, the first material and the second material are sequentially evaporated to form two hole transport layers, and the first material is selected from a compound shown in the formula 1; and the second material is selected from a compound shown in a formula 2. According to the invention, the first material with a high refractive index is used as the first hole transport layer, the second material with a low refractive index is used as the second hole transport layer, and the structures of the first material and the second material are respectively limited at the same time. The invention overcomes the limitation of a single material or a simple mixed material in the aspects of hole transport and luminous efficiency. .

The invention relates to the technical field of semiconductor devices, in particular to a low-working-current-density green light Micro-LED epitaxial structure and a preparation method thereof. The epitaxial structure comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer and a P-type semiconductor layer. The electron blocking layer is not arranged on the multi-quantum-well light-emitting layer, the multi-quantum-well light-emitting layer comprises four sub-layers including a first light blue light multi-quantum-well layer, a second blue light multi-quantum-well layer, a third green light multi-quantum-well layer and a fourth light blue light multi-quantum-well layer, and the In component content in the third green light multi-quantum-well layer is larger than that in other layers. The third cyan light multi-quantum well layer is a main light-emitting unit and is not provided with an electron blocking layer, so that the blocking effect on hole injection can be eliminated, the hole injection efficiency of the P-type semiconductor layer is remarkably improved, and the matching degree of electron hole concentration in a multi-quantum well light-emitting layer region is improved.

The invention relates to the technical field of preparation of organic photoelectric materials, in particular to a boron-nitrogen compound and an organic electroluminescent device comprising the same. The boron-nitrogen compound disclosed by the invention has good electron and hole receiving capability, and interaction among luminescent molecules can be effectively inhibited by introducing a large-steric-hindrance double-spiro group. Specifically, the boron-nitrogen compound provided by the invention is used as a functional layer, especially as an organic electroluminescent device manufactured by a luminescent layer, the current efficiency is improved, the efficiency of the device is greatly improved, and the service life of the device is greatly prolonged. Therefore, after most electrons and holes are compounded, energy is effectively transferred to the boron-nitrogen compound, so that high luminous efficiency is realized.

The invention provides a preparation method and application of a quantum dot light-emitting diode based on interface modification, and belongs to the technical field of quantum dot materials. The preparation method comprises the following steps: (1) spin-coating PEDOT: PSS-4083 on ITO (Indium Tin Oxide) to obtain a hole injection layer; (2) spin-coating polyvinyl carbazole on the hole injection layer in the step (1) to obtain a hole transport layer; (3) spin-coating pyridine on the hole transport layer in the step (2) to obtain a modification layer; (4) spin-coating ZnCdS / ZnS quantum dot normal octane on the modification layer in the step (3) to obtain a quantum dot film; and (5) spin-coating an Mg-doped ZnO ethanol solution on the quantum dot film in the step (4), and performing high-vacuum evaporation to obtain the quantum dot light-emitting diode. Compared with an original device, the EQE of the prepared quantum dot light emitting diode is improved by 16.5%, and the highest brightness is improved by 12.5%.

The invention discloses a thermal-decay-resistant red light Micro LED epitaxial structure and a preparation method thereof. The epitaxial structure sequentially comprises a substrate layer, an n-type buffer layer, an n-type etching barrier layer, an n-type ohmic contact layer, an n-type limiting layer, a quantum well structure, a p-type spacer layer, a p-type electron barrier layer and a p-type ohmic contact layer from bottom to top. Wherein the quantum well structure is formed by alternating 1-5 pairs of InGaP well layers and three-section type p-type AlGaInP barrier layers, and the three sections of barrier layers adopt gradient energy level design and are all subjected to p-type doping; according to the invention, the problems of carrier loss and low recombination efficiency at high temperature in the prior art are solved by blocking electron overflow through the gradient energy level barrier and supplementing the hole concentration through p-type doping, so that the 85 DEG C external quantum efficiency attenuation rate is less than or equal to 10%, the service life is prolonged to more than 50,000 hours, and the process is compatible with mass production and is suitable for the fields of display, illumination and the like.

The invention relates to the technical field of preparation of organic photoelectric materials, in particular to a boron-nitrogen compound and an organic electroluminescent device comprising the same. The boron-nitrogen compound disclosed by the invention has good electron and hole receiving capability, and interaction among luminescent molecules can be effectively inhibited by introducing a spirocyclic group with large steric hindrance. Specifically, the boron-nitrogen compound provided by the invention is used as a functional layer, especially as an organic electroluminescent device manufactured by a luminescent layer, the current efficiency is improved, the efficiency of the device is greatly improved, and the service life of the device is greatly prolonged. Therefore, after most electrons and holes are compounded, energy is effectively transferred to the boron-nitrogen compound, so that high luminous efficiency is realized.

The invention relates to the technical field of electroluminescence, and discloses a laminated organic light-emitting device and application thereof, and the laminated organic light-emitting device comprises an anode layer, a first light-emitting unit, an electron transport layer, an interface modification layer, a connection layer, a second light-emitting unit and a cathode layer which are sequentially arranged from bottom to top; the electron transport layer comprises a hole blocking layer and an n-type electron transport layer; wherein the n-type electron transport layer is composed of an n-type dopant and an organic electron transport material, has the functions of electron transport, charge separation and injection and regulation and control of the optical microcavity effect of the laminated device, can simplify the electron transport and connection layer structure of the laminated device, and effectively improves the conductivity of the laminated device; according to the laminated organic light-emitting device, the voltage drop of the body is obviously reduced, and the interface electron injection barrier is reduced, so that the laminated organic light-emitting device has the advantages of low driving voltage, high efficiency and long service life, and the effect of adjusting the optical microcavity of the device can be achieved by utilizing the n-type electron transport layer.

A physics-based network model is trained to learn weights such as trapping, detrapping, and / or transport of holes and / or electrons, as well as voltage distribution on a voxel-by-voxel basis throughout a solid-state detector model. The physics-based network may be used to estimate material property variation throughout the voxels. To reduce the number of experimental setups and information needed to train the models, the models may be trained using more easily acquired ground truth. Just the electrode signals or just the free charge data is used to train the model to characterize the solid-state detector. With this reduced data, the detector may be characterized using equivalency, such as combining multiple trapping centers to an equivalent trapping center. Regularization may be used in the loss calculation, such as where just the electrode signals are used, to deal with the reduced data available as ground truth.

The invention provides an organic electrochemical transistor regulated and controlled by a grating electrode and a preparation method of the organic electrochemical transistor, and belongs to the technical field of photoelectric detection and organic electrochemical transistors. The organic electrochemical transistor comprises a transparent substrate, a detector anode, a hole transport layer, a photosensitive layer, a semiconductor active layer, an electron transport layer, a detector cathode, a packaging layer, a transistor grid electrode, a transistor source electrode, a transistor drain electrode and an electrolyte. A QPD and an OECT are integrated above the transparent substrate. The invention also provides a preparation method of the organic electrochemical transistor. Through the illumination effect, the photo-generated voltage generated by the QPD serves as a grid regulation and control signal, and higher current variation for different illumination intensities is achieved. The preparation process is remarkably simplified, the responsivity, the detectivity and the linear dynamic range of the device are improved, the stability and the low power consumption characteristic are improved, and a new solution is provided for application of a photoelectric-electrochemical fusion device in the fields of flexible electronics, wearable detection, biosensing and the like.

This invention relates to an aromatic amine organic compound and an organic electroluminescent device containing the same, belonging to the field of semiconductor materials technology. The structure of the compound provided by this invention is shown in general formula (1): When the hole transport material or electron blocking layer material of the organic electroluminescent device is prepared by using the aromatic amine compound of this invention, the device voltage can be reduced and the device life can be extended at the same time, especially the device high temperature life is significantly improved.

The invention relates to the technical field of semiconductor materials, in particular to a low-working-current-density cyan LED epitaxial structure and a preparation method thereof.The low-working-current-density cyan LED epitaxial structure comprises a substrate, and a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum-well light-emitting layer and a P-type semiconductor layer which are sequentially stacked on the substrate; the multi-quantum well light-emitting layer comprises a first light blue light multi-quantum well sub-layer, a second blue light multi-quantum well sub-layer, a third blue light multi-quantum well sub-layer and a fourth light blue light multi-quantum well sub-layer which are sequentially stacked and grown from bottom to top; wherein each sub-layer is of a superlattice structure of an InGaN multi-quantum well layer and a multi-quantum barrier layer, and the barrier heights of the sub-layers decrease progressively in a gradient mode, namely, the high barrier, the middle barrier, the low barrier and the low barrier decrease progressively in sequence. The upper-layer low-potential barrier attracts holes to migrate downwards, and the lower-layer high-potential barrier blocks electrons from leaking, so that space matching of the electrons and the holes is realized, and the performances such as luminous efficiency and yield of the cyan LED chip under low working current density are improved.

According to the deep ultraviolet laser epitaxial structure and the epitaxial growth method thereof provided by the invention, the Al component of the first waveguide layer is linearly and progressively increased from the side close to the electron injection layer to the side close to the quantum well active layer; or the Al component of the second waveguide layer is linearly and progressively decreased from the side close to the quantum well active layer to the side close to the hole injection layer to form refractive index distribution which takes the barrier layer of the quantum well active layer as the highest refractive index point and gradually decreases towards one side (the n-type side or the p-type side), so that the light field is firmly bound near the quantum well active layer, and the light limiting capability is remarkably enhanced; meanwhile, high-low Al components of the p-type side (the second waveguide layer) gradually change to generate a strong polarization electric field, ionization of a p-type doped acceptor (such as Mg) can be promoted, two-dimensional hole gas (2DHG) can be induced, and the hole concentration is improved; the low-high Al components of the n-type side (the first waveguide layer) are gradually changed, so that two-dimensional electron gas can be induced, and the electron concentration is improved.

According to one embodiment, a display device includes an anode, an organic EL element layer including a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer and an electron injection layer, and a cathode, wherein ΔE2_LUMO is defined as a potential barrier between the electron transport layer and the hole blocking layer, and the light-emitting layer, ΔE2_HOMO is defined as a potential barrier between the hole transport layer and the electron blocking layer, and the light-emitting layer, and each of ΔE2_LUMO and ΔE2_HOMO is 0.1 eV or higher and 0.5 eV or less.

The invention relates to the technical field of semiconductor device design and simulation, in particular to a multi-physics-field coupled photoelectric detector modeling method and system, and the method comprises the steps: calculating the spatial distribution of the carrier generation rate, the carrier recombination rate, the potential, the distribution of electron concentration and hole concentration, and heat effect feedback data of a surface incidence semiconductor photoelectric detector; calculating the current density distribution of the target surface incident semiconductor photoelectric detector under the dynamic input optical power; based on an automatic differential Newton iteration method, a multi-physics field coupling equation set is solved according to spatial distribution of a carrier generation rate, current density distribution, a carrier recombination rate, potential, distribution of electron concentration and hole concentration and heat effect feedback data; and establishing an equivalent circuit model of the surface incidence semiconductor photoelectric detector, and carrying out co-simulation with an external circuit. Therefore, the problems of insufficient physical field coupling, poor numerical stability, low calculation efficiency, inaccurate simulation and the like in a traditional photoelectric detector simulation method are solved.

The invention provides a compound with an electron transmission function, an organic electroluminescent device containing the compound and application of the compound, the structure of the compound takes 9-alkyl-9-phenyl fluorenyl, phenanthryl and a triazine group as main components, the 9-alkyl-9-phenyl fluorenyl is one of core structures, fluorene is a polycyclic aromatic hydrocarbon with better planarity, and the triazine group is one of the core structures. Alkyl and phenyl are introduced to the ninth site to generate strong spatial repulsive force with a fluorene ring, a three-dimensional and non-planar propeller-shaped structure is formed, and the non-planar structure can effectively inhibit close packing of molecules in a solid state, so that concentration quenching and excimer formation caused by pi-pi packing are prevented, and the stability of the fluorescent probe is improved. And moreover, the rigid and non-planar structure can also effectively improve the thermal stability of the material, and the service life of the device is prolonged. The compound provided by the invention is used as an electron transport layer and a hole blocking layer in a light-emitting device, so that the device has low driving voltage, high luminous efficiency and long service life.

The invention relates to the technical field of semiconductor materials, in particular to a low-working-current-density green-light LED epitaxial structure and a preparation method thereof.The low-working-current-density green-light LED epitaxial structure comprises a substrate, and a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum-well light-emitting layer and a P-type semiconductor layer which are sequentially stacked on the substrate; the multi-quantum-well light-emitting layer comprises a first blue light multi-quantum-well layer, a second green light multi-quantum-well layer, a third green light multi-quantum-well layer and a fourth green light multi-quantum-well layer which are sequentially stacked and grown from bottom to top. Wherein each InGaN well layer and each quantum barrier layer are subjected to gradient design in thickness, Al component and In component, so that electron and hole space matching is realized, and the performances such as luminous efficiency and yield of the green light LED chip under low working current density are improved.

The invention provides a carbazole ring-containing compound and an organic electroluminescent device thereof, and relates to the technical field of organic electroluminescent materials. The carbazole ring-containing compound provided by the invention has relatively high glass transition temperature and molecular thermal stability, and has a proper HOMO energy level, so that the distribution of electrons and holes in a luminescent layer is more balanced, and the recombination efficiency of excitons in the luminescent layer is improved; when the compound is applied to a light-emitting layer of an organic light-emitting device, the light-emitting efficiency and the service life of the device can be effectively improved. Meanwhile, the preparation method of the compound is simple, raw materials are easy to obtain, and the compound can be widely applied to the fields of organic thin film transistors, panel display and the like and has good application effects and industrialization prospects.

The invention relates to the technical field of preparation of organic photoelectric materials, in particular to a boron-nitrogen compound and an organic electroluminescent device comprising the same. The boron-nitrogen compound disclosed by the invention has good electron and hole receiving capability, and interaction among luminescent molecules can be effectively inhibited by introducing large-steric-hindrance azafluorene / benzfluorene / azabenzfluorene / silafluorene / germanium heterofluorene and other groups. The energy transmission performance between a subject and an object or a sensitizer can be improved by a large conjugated spiro structure unit, an sp2 aza-aromatic ring and other structures. Specifically, the boron-nitrogen compound provided by the invention is used as a functional layer, especially as an organic electroluminescent device manufactured by a luminescent layer, the current efficiency is improved, the lighting voltage is reduced, and meanwhile, the service life of the device is greatly prolonged. Therefore, after most electrons and holes are compounded, energy is effectively transferred to the boron-nitrogen compound, so that high luminous efficiency is realized.

The invention belongs to the technical field of solar cells, and discloses a back contact double-sided perovskite solar cell based on a parallel structure and a preparation method of the back contact double-sided perovskite solar cell. The battery comprises, in order: a glass substrate; a first perovskite light absorption layer; the first charge transport layer comprises a first hole transport layer HTL and a first electron transport layer ETL which are arranged at an interval; patterning the electrode layer; the second charge transport layer comprises a second hole transport layer HTL and a second electron transport layer ETL which are arranged at an interval, the second hole transport layer HTL and the first hole transport layer HTL are correspondingly arranged, and the second electron transport layer ETL and the first electron transport layer ETL are correspondingly arranged; patterning the insulating layer; a second perovskite light absorption layer; and packaging the adhesive film layer and the back glass. According to the solar cell, double-face light receiving and maximum light energy utilization can be achieved, meanwhile, the requirement for current matching is lowered through the parallel connection design, the shadow tolerance and environmental adaptability of a device are improved, and the manufacturing cost is reduced.

A light-emitting device includes a first electrode, and second electrode facing the first electrode, and an interlayer between the first electrode and the second electrode. The interlayer includes an emission layer and a layer. The emission layer includes a first hole transport compound, a first electron transport compound, and a third compound. The layer includes the first electron transport compound, a metal-containing material, and a second electron transport compound, and the layer is between the emission layer and the second electrode.

The invention relates to the technical field of photocatalysts, in particular to a bismuth-defect bismuth oxybromide-sulfur-defect bismuth sulfide bromide heterojunction and a preparation method and application thereof in photocatalytic CO2 reduction, Bi (NO3) 3.5 H2O, thiourea, cetyltrimethylammonium bromide (CTAB) and the like are used as raw materials, and the VBi-Bi4O5Br2 / VS-Bi19Br3S27 heterojunction is prepared through a two-step hydrothermal method. According to the VBi-Bi4O5Br2 / VS-Bi19Br3S27 heterojunction, bismuth vacancies and sulfur vacancies are introduced, the visible light absorption range of the material is expanded through a proper amount of double vacancies, more electron capture centers are provided, and the separation efficiency of photo-induced electrons and the vacancies is improved, so that the VBi-Bi4O5Br2 / VS-Bi19Br3S27 heterojunction has excellent performance of photocatalytic reduction of CO2, and the preparation method of the VBi-Bi4O5Br2 / VS-Bi19Br3S27 heterojunction is suitable for large-scale production and application of the VBi-Bi4O5Br2 / VS-Bi19Br3S27 heterojunction. CO2 can be reduced into a single product CO, and the photoreduction efficiency of the carbon dioxide can be improved.

The invention discloses a preparation method of a pyrenyl covalent organic framework material and application of the pyrenyl covalent organic framework material in photocatalytic hydrogen production reaction, and belongs to the field of heterogeneous catalysis. The novel pyrenyl COFs photocatalyst is synthesized by regulating and controlling the quantity of triphenylamine and integrating triphenylamine monomers with different contents into a pyrenyl covalent organic framework (COF) skeleton. The preparation method is simple to operate, mild in reaction condition, short in reaction time and high in repeatability, the obtained pyrenyl COFs have good light capture capacity and photon-generated carrier separation characteristic, electron-hole recombination can be effectively reduced, the excited state service life is prolonged, the reaction efficiency of photocatalytic hydrogen production is improved, and potential application prospects are achieved.

The invention is suitable for the technical field of semiconductor LED display, and provides a high-color-gamut LED chip structure and a preparation method thereof. The high-color-gamut LED chip structure comprises a substrate material, a buffer layer, a first semiconductor layer, a green wave quantum well layer, an electron hole adjusting layer, a blue wave quantum well layer, a second semiconductor layer, a current blocking layer and a current expansion layer which are sequentially arranged from bottom to top, and further comprises a first metal electrode layer, a second metal electrode layer and a transparent insulating layer. The electron hole adjusting layer is used for controlling the distribution of electrons and holes in the green wave quantum well layer and the blue wave quantum well layer so as to adjust the wavelength and the spectral intensity of emergent light of the green wave quantum well layer; through introduction of the electron hole adjusting layer, the wavelength of a long wave and the corresponding spectral intensity can be effectively controlled, two wavelengths can be emitted from a single chip, and through introduction of double waves, the color gamut of a display screen can be improved.

The invention provides a photoelectric detection chip and a preparation method thereof, a photoelectric detector and electronic equipment, the photoelectric detection chip comprises a substrate, a first doping layer, a second doping layer, an intrinsic absorption layer, a micro-nano structure, a first electrode and a second electrode, the first doping layer is arranged on the surface of the substrate along the thickness direction of the substrate, and the second doping layer is arranged on the surface of the substrate; the intrinsic absorption layer is located between the first doping layer and the second doping layer, the multiple micro-nano structures are arranged in an array mode in the direction perpendicular to the thickness direction of the substrate, so that at least part of incident light is limited in the intrinsic absorption layer, the absorption efficiency of the intrinsic absorption layer on the incident light is improved, more electrons and holes can be generated conveniently, and the light emitting efficiency is improved. The responsivity of the photoelectric detection chip is improved; meanwhile, the micro-nano structure penetrates through the first doping layer, the intrinsic absorption layer and the second doping layer, so that electrons and holes move in the thickness direction, the transition distance and the transition time of the electrons and the holes are shortened, and the bandwidth of the photoelectric detection chip is improved.

The invention discloses a space high-temperature environment tolerant perovskite cell and a preparation method thereof, and relates to the technical field of solar cells, the perovskite cell comprises a substrate, a conductive layer, a hole transport layer, a first oxide layer, a perovskite light absorption layer, a second oxide layer, an electron transport layer, an interface layer and a metal electrode layer which are stacked in sequence, wherein the hole transport layer is made of nickel oxide; the crystal structures of the first oxide layer and the second oxide layer are perovskite crystal structures; the perovskite light absorption layer is made of inorganic metal halide with an ABX3 type structure; the interface layer is made of metal chromium; according to the invention, the problems of easy material decomposition and interface failure of the perovskite cell under a high-temperature condition are improved, and the high-temperature resistance of the perovskite cell is improved, so that the perovskite cell meets the requirement of long-term stable work in a space high-temperature environment.

The application discloses a kind of detection pesticide water amitraz integrated organic photoelectrochemical transistor sensor construction method.The application is integrated on the same fluorine-doped tin oxide conductive glass chip by laser etching technology to have the gate, source, drain three electrodes of organic photoelectrochemical transistor.In order to improve the activity and stability of grating material, the method of encapsulating Pd NPs in Cu-MOF and pyrolyzing is adopted, and Pd NPs / p-Cu-MOF is formed.Pyrolysis Cu-MOF with three-dimensional MOF structure as active carrier can load more Pd NPs, and the redox active copper metal elements contained therein will cause electron transfer between carrier and Pd NPs, so as to adjust the electronic state of metal active site and improve its catalytic performance.Schottky junction is formed between Pd NPs and p-Cu-MOF, which promotes the separation of electrons and holes.Pd NPs / p-Cu-MOF is used as photoactive gate material, and amino amitraz aptamer with carboxyl on the material is used as recognition element, so as to realize the OPECT sensing detection of ICP.

The invention provides a vertical deep ultraviolet LED epitaxial structure and a preparation method thereof. The vertical deep ultraviolet LED epitaxial structure comprises a substrate, an intrinsic layer, a sacrificial layer, a first electron injection layer, an etching barrier layer, a second electron injection layer, a quantum well active layer, an electron barrier layer and a hole injection layer which are sequentially stacked from bottom to top. Wherein the etching barrier layer is made of an n-type doped AlGaN material or an n-type doped AlN material; the mass percentage content of an Al component of the etching barrier layer is 70%-100%; according to the invention, the etching barrier layer with a high Al component is inserted into the electron injection structure, and the high Al-N bond energy and strong chemical stability of the etching barrier layer are utilized, so that the subsequent epitaxial layer can be effectively prevented from being excessively corroded in the dry etching process of the sacrificial layer, and the interface damage is reduced; meanwhile, the etching barrier layer with the high Al component and the electron injection layer form a remarkable barrier difference, the high barrier can guide electrons to be transversely and uniformly diffused in the electron injection layer, and the current density uniformity of the quantum well active layer is improved.

The present application relates to the technical field of organic photoelectric material, in particular to a kind of arylamine compound and organic electroluminescent device thereof.The arylamine compound shown in formula (I) provided by the present application has good hole migration ability, and proper HOMO and T1 value, is applied to OLED device as hole transport material, can improve the transmission efficiency of hole, collocates other functional layer, can improve the luminous efficiency of device;It also has good stability, can resist high temperature and corrosive gas, thereby prolonging the service life of device;The arylamine compound also has good space configuration, excellent arrangement between molecules, good film-forming property, further improve the luminous efficiency and service life of device.Summarized above, the arylamine compound provided by the present application has the advantages of proper energy level, good stability, good film-forming property etc., can be used as hole transport material, can also be used as the host material of light-emitting layer and cover layer material, is a kind of excellent performance, widely used OLED material.

The invention belongs to the technical field of corrosion inhibition of ocean engineering structure metal materials, and particularly relates to an anti-corrosion, anti-fouling and antibacterial multifunctional Z-type heterojunction photo-anode and a preparation method thereof. The photoanode is of a Z-type heterojunction structure, and selective recombination of electron-hole pairs can be achieved, so that electrons with higher reducing capacity are reserved on a conduction band of one semiconductor, and holes with higher oxidizing capacity are reserved on a valence band of the other semiconductor. Photoelectrons are effectively injected into protected metal to realize photoelectric cathode protection; meanwhile, strong oxidizing holes and generated active oxygen species (such as. OH) can efficiently degrade organic matters and biological membranes, kill bacteria and inhibit algae, and the anti-corrosion, anti-fouling and anti-algae functions are synchronously achieved. The problem that a traditional photo-anode is single in function is solved, and the photo-anode has the advantages of being high in sunlight utilization rate, high in oxidation-reduction capacity, good in stability and the like and can be widely applied to the fields of ocean engineering corrosion prevention, medical instrument surface treatment, water treatment and the like.

The invention discloses an enhanced GaN HEMT (High Electron Mobility Transistor) device based on a composite gate and gate terminal expansion and a preparation method thereof, the p-InGaN and p-GaN / p + GaN layer heterojunction polarization effect in the composite gate structure of the enhanced GaN HEMT device can generate two-dimensional hole gas on an interface, and more holes are injected into a channel to be compounded with electrons when high leakage voltage is turned off; the electron concentration of the lower channel layer near the gate is reduced, so that electron capture of the buffer layer on the channel layer is inhibited, the dynamic performance of the device is improved, the reliability of the device is enhanced, the gate terminal expansion structure is utilized to expand the composite gate structure, the off-state electric field distribution of the device is optimized, and the reliability of the device is improved. The electric field peak value of the edge of the gate field plate can be redistributed and weakened, the current collapse effect is effectively restrained, and the preparation method of the device is simple in process and low in cost. According to the scheme, the gate stability and the dynamic performance of the device can be improved, and a reliable device basis is provided for a GaN power system with higher frequency, higher efficiency and higher power density.