929 results about "Electron hole" patented technology

An organic light-emitting device comprises an anode, a cathode and an organic layer formed between the anode and the cathode, and the organic layer comprises a hole injection layer, a hole transmission area, an electron blocking layer, a light-emitting area and an electron transmission area. The hole transport region comprises a first material and a second material, the first material and the second material are sequentially evaporated to form two hole transport layers, and the first material is selected from a compound shown in the formula 1; and the second material is selected from a compound shown in a formula 2. According to the invention, the first material with a high refractive index is used as the first hole transport layer, the second material with a low refractive index is used as the second hole transport layer, and the structures of the first material and the second material are respectively limited at the same time. The invention overcomes the limitation of a single material or a simple mixed material in the aspects of hole transport and luminous efficiency. .

This invention relates to an aromatic amine organic compound and an organic electroluminescent device containing the same, belonging to the field of semiconductor materials technology. The structure of the compound provided by this invention is shown in general formula (1): When the hole transport material or electron blocking layer material of the organic electroluminescent device is prepared by using the aromatic amine compound of this invention, the device voltage can be reduced and the device life can be extended at the same time, especially the device high temperature life is significantly improved.

According to the deep ultraviolet laser epitaxial structure and the epitaxial growth method thereof provided by the invention, the Al component of the first waveguide layer is linearly and progressively increased from the side close to the electron injection layer to the side close to the quantum well active layer; or the Al component of the second waveguide layer is linearly and progressively decreased from the side close to the quantum well active layer to the side close to the hole injection layer to form refractive index distribution which takes the barrier layer of the quantum well active layer as the highest refractive index point and gradually decreases towards one side (the n-type side or the p-type side), so that the light field is firmly bound near the quantum well active layer, and the light limiting capability is remarkably enhanced; meanwhile, high-low Al components of the p-type side (the second waveguide layer) gradually change to generate a strong polarization electric field, ionization of a p-type doped acceptor (such as Mg) can be promoted, two-dimensional hole gas (2DHG) can be induced, and the hole concentration is improved; the low-high Al components of the n-type side (the first waveguide layer) are gradually changed, so that two-dimensional electron gas can be induced, and the electron concentration is improved.

The invention relates to the technical field of semiconductor device design and simulation, in particular to a multi-physics-field coupled photoelectric detector modeling method and system, and the method comprises the steps: calculating the spatial distribution of the carrier generation rate, the carrier recombination rate, the potential, the distribution of electron concentration and hole concentration, and heat effect feedback data of a surface incidence semiconductor photoelectric detector; calculating the current density distribution of the target surface incident semiconductor photoelectric detector under the dynamic input optical power; based on an automatic differential Newton iteration method, a multi-physics field coupling equation set is solved according to spatial distribution of a carrier generation rate, current density distribution, a carrier recombination rate, potential, distribution of electron concentration and hole concentration and heat effect feedback data; and establishing an equivalent circuit model of the surface incidence semiconductor photoelectric detector, and carrying out co-simulation with an external circuit. Therefore, the problems of insufficient physical field coupling, poor numerical stability, low calculation efficiency, inaccurate simulation and the like in a traditional photoelectric detector simulation method are solved.

The invention provides a compound with an electron transmission function, an organic electroluminescent device containing the compound and application of the compound, the structure of the compound takes 9-alkyl-9-phenyl fluorenyl, phenanthryl and a triazine group as main components, the 9-alkyl-9-phenyl fluorenyl is one of core structures, fluorene is a polycyclic aromatic hydrocarbon with better planarity, and the triazine group is one of the core structures. Alkyl and phenyl are introduced to the ninth site to generate strong spatial repulsive force with a fluorene ring, a three-dimensional and non-planar propeller-shaped structure is formed, and the non-planar structure can effectively inhibit close packing of molecules in a solid state, so that concentration quenching and excimer formation caused by pi-pi packing are prevented, and the stability of the fluorescent probe is improved. And moreover, the rigid and non-planar structure can also effectively improve the thermal stability of the material, and the service life of the device is prolonged. The compound provided by the invention is used as an electron transport layer and a hole blocking layer in a light-emitting device, so that the device has low driving voltage, high luminous efficiency and long service life.

The invention belongs to the technical field of solar cells, and discloses a back contact double-sided perovskite solar cell based on a parallel structure and a preparation method of the back contact double-sided perovskite solar cell. The battery comprises, in order: a glass substrate; a first perovskite light absorption layer; the first charge transport layer comprises a first hole transport layer HTL and a first electron transport layer ETL which are arranged at an interval; patterning the electrode layer; the second charge transport layer comprises a second hole transport layer HTL and a second electron transport layer ETL which are arranged at an interval, the second hole transport layer HTL and the first hole transport layer HTL are correspondingly arranged, and the second electron transport layer ETL and the first electron transport layer ETL are correspondingly arranged; patterning the insulating layer; a second perovskite light absorption layer; and packaging the adhesive film layer and the back glass. According to the solar cell, double-face light receiving and maximum light energy utilization can be achieved, meanwhile, the requirement for current matching is lowered through the parallel connection design, the shadow tolerance and environmental adaptability of a device are improved, and the manufacturing cost is reduced.

The invention discloses a preparation method of a pyrenyl covalent organic framework material and application of the pyrenyl covalent organic framework material in photocatalytic hydrogen production reaction, and belongs to the field of heterogeneous catalysis. The novel pyrenyl COFs photocatalyst is synthesized by regulating and controlling the quantity of triphenylamine and integrating triphenylamine monomers with different contents into a pyrenyl covalent organic framework (COF) skeleton. The preparation method is simple to operate, mild in reaction condition, short in reaction time and high in repeatability, the obtained pyrenyl COFs have good light capture capacity and photon-generated carrier separation characteristic, electron-hole recombination can be effectively reduced, the excited state service life is prolonged, the reaction efficiency of photocatalytic hydrogen production is improved, and potential application prospects are achieved.

The invention is suitable for the technical field of semiconductor LED display, and provides a high-color-gamut LED chip structure and a preparation method thereof. The high-color-gamut LED chip structure comprises a substrate material, a buffer layer, a first semiconductor layer, a green wave quantum well layer, an electron hole adjusting layer, a blue wave quantum well layer, a second semiconductor layer, a current blocking layer and a current expansion layer which are sequentially arranged from bottom to top, and further comprises a first metal electrode layer, a second metal electrode layer and a transparent insulating layer. The electron hole adjusting layer is used for controlling the distribution of electrons and holes in the green wave quantum well layer and the blue wave quantum well layer so as to adjust the wavelength and the spectral intensity of emergent light of the green wave quantum well layer; through introduction of the electron hole adjusting layer, the wavelength of a long wave and the corresponding spectral intensity can be effectively controlled, two wavelengths can be emitted from a single chip, and through introduction of double waves, the color gamut of a display screen can be improved.

The invention provides a photoelectric detection chip and a preparation method thereof, a photoelectric detector and electronic equipment, the photoelectric detection chip comprises a substrate, a first doping layer, a second doping layer, an intrinsic absorption layer, a micro-nano structure, a first electrode and a second electrode, the first doping layer is arranged on the surface of the substrate along the thickness direction of the substrate, and the second doping layer is arranged on the surface of the substrate; the intrinsic absorption layer is located between the first doping layer and the second doping layer, the multiple micro-nano structures are arranged in an array mode in the direction perpendicular to the thickness direction of the substrate, so that at least part of incident light is limited in the intrinsic absorption layer, the absorption efficiency of the intrinsic absorption layer on the incident light is improved, more electrons and holes can be generated conveniently, and the light emitting efficiency is improved. The responsivity of the photoelectric detection chip is improved; meanwhile, the micro-nano structure penetrates through the first doping layer, the intrinsic absorption layer and the second doping layer, so that electrons and holes move in the thickness direction, the transition distance and the transition time of the electrons and the holes are shortened, and the bandwidth of the photoelectric detection chip is improved.

The invention provides a vertical deep ultraviolet LED epitaxial structure and a preparation method thereof. The vertical deep ultraviolet LED epitaxial structure comprises a substrate, an intrinsic layer, a sacrificial layer, a first electron injection layer, an etching barrier layer, a second electron injection layer, a quantum well active layer, an electron barrier layer and a hole injection layer which are sequentially stacked from bottom to top. Wherein the etching barrier layer is made of an n-type doped AlGaN material or an n-type doped AlN material; the mass percentage content of an Al component of the etching barrier layer is 70%-100%; according to the invention, the etching barrier layer with a high Al component is inserted into the electron injection structure, and the high Al-N bond energy and strong chemical stability of the etching barrier layer are utilized, so that the subsequent epitaxial layer can be effectively prevented from being excessively corroded in the dry etching process of the sacrificial layer, and the interface damage is reduced; meanwhile, the etching barrier layer with the high Al component and the electron injection layer form a remarkable barrier difference, the high barrier can guide electrons to be transversely and uniformly diffused in the electron injection layer, and the current density uniformity of the quantum well active layer is improved.

The present application relates to the technical field of organic photoelectric material, in particular to a kind of arylamine compound and organic electroluminescent device thereof.The arylamine compound shown in formula (I) provided by the present application has good hole migration ability, and proper HOMO and T1 value, is applied to OLED device as hole transport material, can improve the transmission efficiency of hole, collocates other functional layer, can improve the luminous efficiency of device;It also has good stability, can resist high temperature and corrosive gas, thereby prolonging the service life of device;The arylamine compound also has good space configuration, excellent arrangement between molecules, good film-forming property, further improve the luminous efficiency and service life of device.Summarized above, the arylamine compound provided by the present application has the advantages of proper energy level, good stability, good film-forming property etc., can be used as hole transport material, can also be used as the host material of light-emitting layer and cover layer material, is a kind of excellent performance, widely used OLED material.

The invention discloses a laser and a preparation method thereof.The laser comprises a first reflector, a hole transport layer, a gain layer, an electron transport layer and a second reflector which are arranged in a stacked mode in the first direction and further comprises a first electrode and a second electrode, and the first electrode is located on the side, away from the gain layer, of the hole transport layer; the projection parts of the first electrode and the hole transport layer in the first direction are overlapped, the second electrode is located on the side, away from the gain layer, of the electron transport layer, and the projection parts of the second electrode and the electron transport layer in the first direction are overlapped. According to the laser provided by the invention, electric injection of the gain layer is realized, so that the problem of difficulty in electric pumping in the laser is solved, and the efficiency of the laser is improved.

The invention discloses a long-wave infrared detector based on electric field intensity distribution regulation and control and a preparation method, and relates to the technical field of semiconductors, the long-wave infrared detector comprises a substrate, a bottom contact layer, a hole barrier layer, an absorption layer, an electron barrier layer and a top contact layer which are sequentially arranged from bottom to top; wherein the bottom contact layer and the hole barrier layer adopt an InAs / GaSb / AlSb / GaSb superlattice structure; the absorption layer, the electron barrier layer and the top contact adopt an InAs / GaSb superlattice structure; the doping concentration of the absorption layer is greater than the doping concentration of the hole barrier layer and the electron barrier layer. The doping concentration of the absorption layer is set to be greater than that of the barrier layer, so that the width of a depletion region of the absorption layer is reduced, the depletion region deviates towards the barrier layer, the probability of SRH recombination is reduced, G-R current can be effectively inhibited, and the overall dark current level is reduced.

The application discloses a kind of gold nanoparticle loaded oxygen-doped ultrathin porous boron nitride film electrode and preparation method thereof, the preparation method includes the following steps: according to mass ratio 1:3-6:0.25-0.35, boric acid, urea, oxalic acid is prepared oxygen-doped ultrathin porous boron nitride, then gold nanoparticle is loaded oxygen-doped ultrathin porous boron nitride and coated on conductive substrate to form film electrode.The oxygen-doped ultrathin porous boron nitride film electrode loaded with gold nanoparticles prepared by the application has the advantages of large specific surface area, high electron-hole separation efficiency, fast electron transfer rate, etc., is a new type of film electrode with excellent photoelectric performance, meets the actual production demand, and has wide application prospect in photoelectrochemical field.The preparation method also has the advantages of simple process, easy operation, high preparation efficiency and low cost, and is suitable for large-scale preparation, which is beneficial to industrial application.

The invention discloses a preparation method of a TiO2 / FeTiO3 high-efficiency heterojunction photocatalyst taking a ceramic membrane as a carrier, the photocatalytic degradation performance of the TiO2 / FeTiO3 high-efficiency heterojunction photocatalyst prepared by the method on microcystis aeruginosa is remarkably improved, the removal rate of the TiO2 ceramic membrane in 240 minutes can only reach 31.2% under full light irradiation, and the removal rate of the TiO2 ceramic membrane in 240 minutes can only reach 31.2% under full light irradiation. The removal rate of the TiO2 / FeTiO3-4 ceramic membrane with the optimal photocatalytic performance within 180 minutes can reach 100%, and meanwhile, the TiO2 / FeTiO3 ceramic membrane also has excellent photocatalytic stability. The photocatalytic performance of the TiO2 / FeTiO3 ceramic film is improved due to the fact that TiO2 and FeTiO3 form a heterojunction, photon-generated carriers escape from the surface of an electrode more easily, the recombination efficiency of photo-generated electrons and holes is remarkably inhibited under the action of a heterojunction system, and the electron migration rate is remarkably improved. The design and preparation of the TiO2 / FeTiO3 heterojunction provide an important theoretical basis for further developing a photocatalytic material for efficiently removing microcystis aeruginosa.

The present invention relates to novel materials and electronic devices, in particular organic electronic devices such as OLEDs (organic light emitting diodes) containing these materials, for example as hole injection materials, hole transport materials or electron blocking materials. The invention also relates to mixtures that contain these novel materials.

A kind of lead-free perovskite hemispherical photodetector, preparation method and its application in single-pixel lensless color imaging belong to the field of image processing technology.The detector is composed of chromium electrode layer, electron transport layer, perovskite layer, hole transport layer and metal electrode layer from inside to outside on the spherical surface of hemispherical transparent substrate.The perovskite obtained by the application has strong lead-free and excellent stability, outstanding charge carrier transport capacity, high collection efficiency and strong weak light sensing ability.The application uses perovskite for color imaging, directly converts optical signal into electrical signal, has high sensitivity, shows excellent performance with linear dynamic response range of 146dB, and has the advantages of uniform response capacity and uniform thickness.The halide perovskite used by the application has low cost, short preparation time, does not contain toxic element lead, improves the application range of perovskite detector, and reduces the manufacturing cost and time cost of perovskite detector.

This application belongs to the field of display technology and relates to an optoelectronic device and its fabrication method, as well as a display apparatus. The optoelectronic device includes an anode, a hole functional layer, an active layer, an electron functional layer, and a cathode. The electron functional layer is made of a first core-shell material, the core of which includes a first N-type semiconductor material, and the shell material includes a first carbon material; and / or, a first interface layer is provided between the active layer and the hole functional layer, the first interface layer including a second core-shell material, the core of which includes a first P-type semiconductor material, and the shell material includes a second carbon material; and / or, a second interface layer is provided between the active layer and the electron functional layer, the second interface layer including a third core-shell material, the core of which includes a second N-type semiconductor material, and the shell material includes a third carbon material. The above materials have high hole / electron transport performance and a small contact angle with water, enabling them to absorb water oxygen and preventing water oxygen from entering the light-emitting layer for hydrolysis or oxidation, thereby improving the lifetime and external quantum efficiency of the optoelectronic device.

The invention relates to the technical field of photocatalysis, in particular to an I-type p-n heterojunction photocatalyst as well as a preparation method and application thereof. According to the photocatalyst, an n-type semiconductor metal organic framework NUS-8 is used as a matrix, a p-type semiconductor CuO is loaded, and an I-type p-n heterojunction structure is constructed. The preparation method comprises the following steps: by taking NUS-8 and cupric salt as raw materials and N, N-dimethylformamide as a dispersion medium, performing coordination anchoring on Cu < 2 + > on the surface of NUS-8 under solvothermal, oxidizing to form CuO nanoparticles, and constructing a coupling interface to obtain the photocatalyst. An energy band of the material is in I-type (straddling type) arrangement, a built-in electric field is formed by Fermi level difference at an interface, directional separation and migration of photo-induced electrons and holes are effectively driven, and the catalytic activity and stability of a photocatalytic reaction are remarkably improved. The material has the advantages of simple and convenient process, stable structure, excellent photocatalytic performance and the like, and is suitable for environment and energy related fields such as photocatalytic CO2 reduction and the like.

This application provides a perovskite light-emitting module and its fabrication method, belonging to the field of semiconductor optoelectronic device manufacturing technology. The perovskite light-emitting module includes: a substrate, and multiple perovskite light-emitting units located on the substrate; wherein, along the direction away from the substrate, each perovskite light-emitting unit sequentially includes an anode, a hole transport layer, a perovskite layer, an electron transport layer, and a cathode; the multiple perovskite light-emitting units are arranged in series, and in two adjacent perovskite light-emitting units, the cathode of the preceding perovskite light-emitting unit is electrically connected in series with the anode of the following perovskite light-emitting unit.

The present invention relates to the technical field of thermal imaging of mid-infrared focal plane detectors, and more particularly relates to a method for preparing a mid-infrared focal plane detector based on Sn-doped PbSe quantum dots. The mid-infrared focal plane detector is prepared on a readout integrated circuit (ROIC) substrate, and is composed of an Au bottom electrode, a PbS hole transport layer, a Sn-doped PbSe photosensitive layer, and a PIN heterojunction of a ZnO electron transport layer sequentially constructed by an ion beam sputtering method, a spin-coating method, a spin-coating method, and an ion beam sputtering method, respectively, and an indium tin oxide (ITO) top electrode finally evaporated by an ion beam sputtering method.

This invention provides a GaN-based light-emitting diode epitaxial structure and its fabrication method. By introducing a Zn source as a surface activator throughout the growth process of the P-type AlGaN electron blocking layer, a P-type AlGaN electron blocking layer structure with a gradient distribution of Zn concentration along the direction of the P-type AlGaN electron blocking layer is constructed. Specifically, through the core role of the Zn surface activator and the innovative design of the Zn concentration gradient distribution, a smooth rise in the conduction band Ec and no loss of strong electron blocking capability are achieved, while ensuring that the valence band Ev is smooth and without spikes throughout and that hole injection is unimpeded throughout.

The invention provides a hole activation method of p-type nitride, which comprises the following steps: heating an object to be activated to an annealing temperature for annealing by using heating equipment, the object to be activated comprising the p-type nitride or an epitaxial wafer comprising the p-type nitride; and in the annealing process, applying an electric field to the to-be-activated object by applying voltage, and controlling positively charged H ions in the to-be-activated object to move out of a p-type layer of the to-be-activated object in an accelerated manner. According to the method, an electric field is added in the annealing process to accelerate movement of H elements in a p-type layer and escape from an epitaxial wafer, so that the hole concentration of p-type nitride is increased.

The application discloses a micro light emitting diode based on polarization orientation difference regulation and a preparation method thereof. The micro light emitting diode comprises a substrate layer, and a plurality of first regions and second regions arranged alternately on the substrate layer; the first region comprises a non-doped nitrogen-polar nitride layer, a first n-type ohmic contact layer and an n-type electrode which are sequentially stacked; the second region comprises a nucleation layer, a non-doped metal-polar nitride layer, a second n-type ohmic contact layer, a multi-quantum well active region, an electron blocking layer, a p-type hole injection layer, a p++-type ohmic contact layer and a p-type electrode which are sequentially stacked; wherein the second region is a light emitting unit of the device, and a mesa structure thereof is defined by wet etching; the first region and the adjacent second region form a homopolar junction in the horizontal direction. By constructing nitride epitaxial structures with different polarities on the same substrate, a lateral carrier migration potential barrier is formed, and at the same time, etching damage is eliminated by wet etching, so that side wall non-radiative recombination is avoided.

The invention provides a method for forming a semiconductor device. The method comprises the following steps of: acquiring an interface state forbidden band width between a semiconductor substrate and a gate dielectric layer; then, the wavelength of incident light is preset according to the interface state forbidden bandwidth; and carrying out ultraviolet irradiation treatment on the MOS device according to the preset wavelength of the incident light to enable the incident light to penetrate through the metal gate and the gate dielectric layer so as to adjust the threshold voltage of the MOS device. By carrying out ultraviolet irradiation treatment on the MOS device, an interface state defect between a semiconductor substrate and a gate dielectric layer and a defect state trap in the gate dielectric layer can be excited, so that a photoelectric effect is triggered, an electron hole pair is generated, a hole is easily captured by the interface state trap and the defect state trap, positive charges can be formed, and the photoelectric effect is improved. And the local electric field distribution is changed, so that the threshold voltage of the MOS device is adjusted.

The present application relates to the technical field of organic optoelectronic materials and devices, in particular to a preparation method of white organic light-emitting diodes based on a kind of blue, yellow and other color cMa copper (I) TADF complex with nitrogen heterocyclic carbene-copper-arylamines structure, including three steps: first, synthesis of cMa type copper (I) TADF complex containing blue light emitter and yellow light emitter as representative, obtained by ligand selection, intermediate preparation and purification;Second, construct layered WOLEDs device, from bottom to top in turn for substrate, ITO anode, hole injection layer, hole transport layer, buffer layer, yellow light emitting layer, blue light emitting layer, electron transport layer, electron injection layer and Al cathode;Third, through substrate pretreatment, mbar high vacuum evaporation and nitrogen glove box packaging complete device preparation.The WOLEDs device W1, W2 prepared by the present application has excellent photoelectric performance, the CRI is up to 83, the maximum external quantum efficiency is greater than or equal to 13.3%, has good stability and low cost, and is suitable for lighting and display fields.

The application discloses a display panel, a manufacturing method thereof and an evaporation device, and belongs to the technical field of display. The display panel comprises a plurality of light-emitting parts, and each light-emitting part comprises a plurality of stacked unit material layers. The density of at least one of the blue light-emitting part and the green light-emitting part is greater than the density of the red light-emitting part, and the density is the ratio of the number of unit material layers in the light-emitting part to the thickness of the light-emitting part. Since the more the number of unit material layers in the light-emitting part is, the more uniform the doping degree of the at least two light-emitting materials in the light-emitting part is, and the higher the probability of the recombination of holes and electrons in the light-emitting part to form excitons is, the longer the light-emitting life of the light-emitting part is without changing the overall thickness of the light-emitting part, therefore, the light-emitting life of at least one of the blue light-emitting part and the green light-emitting part can be improved by increasing the density of at least one of the blue light-emitting part and the green light-emitting part, so that the light-emitting life of the blue light-emitting part, the green light-emitting part and the red light-emitting part is relatively close.

A display device with a novel structure is provided.SOLUTION: The display device includes a power supply line, a first transistor, a second transistor, a light-emitting device, and a light-receiving device. The light-emitting device includes a first electrode, a light-emitting layer, a first electron-transport layer, an electron-injection layer, and a second electrode which are stacked in this order. In the light-receiving device, a third electrode, an active layer, a first hole-transport layer, an electron-injection layer, and a second electrode are stacked in this order. The first electrode is electrically connected to one of a source and a drain of the first transistor. The second electrode is electrically connected to one of a source and a drain of the second transistor. The power supply line is electrically connected to the other of the source and the drain of the first transistor and the other of the source and the drain of the second transistor.SELECTED DRAWING: Figure 1

This invention provides a method for fabricating LED epitaxial wafers and a Micro-LED. The method involves fabricating a multi-quantum-well layer with a periodic stacked structure of InGaN / InN / AlGaN / GaN layers. The InGaN layer acts as a potential well layer, allowing electrons and holes to recombine and participate in light emission. The ultra-thin design improves polarization and reduces QCSE (Quantum Conversion Efficiency). Simultaneously, the ultra-thin design also reduces indium segregation caused by high In content. The InN layer enhances effective In incorporation, and sufficient NH3 further reacts with precipitated In atoms to form InN, resulting in effective incorporation. This improves the In content while maintaining crystal quality. Furthermore, the AlGaN layer acts as a high barrier layer, effectively confining electrons, while the GaN layer provides hole-rich channels, thereby improving luminous efficiency.

The application provides a LED chip with reverse polarity and small hole light emission and a manufacturing method thereof. The epitaxial layer of the LED chip comprises a P-type window layer and an MQW light emitting layer. The doping concentration of a first region in the P-type window layer is greater than that of a second region, which can limit current expansion and improve light emitting efficiency. An ODR dielectric film layer and an ODR metal reflection layer form an ODR mirror at the bottom of the epitaxial layer. An insulating passivation layer and an N electrode on the sidewall of the epitaxial layer can form an ODR mirror on the sidewall of the epitaxial layer. The N electrode also has a first hollow region. The ODR mirror can be used to reflect light, so that the light emitted by the MQW light emitting layer is only emitted from the first hollow region, and stray light emitted by the sidewall is suppressed. In addition, the orthographic projection of the first hollow region in the first direction completely covers the P ohmic contact metal unit, so that the electron hole recombination region is located in the MQW light emitting layer under the orthographic projection of the first hollow region, and the light emitting efficiency is further improved.