244 results about "Charge injection" patented technology

The invention relates to a high-precision temperature sensor based on complementary dynamic element matching and a zoom analog-to-digital converter and a working method, and belongs to the technical field of sensor improvement, and the sensor comprises an analog front end, an analog-to-digital converter, a digital rear end and a control logic. An improved chopping technology is adopted, and one clock signal is adopted to control two sub operational amplifiers, so that the output stability and precision of the analog front end are improved. A complementary dynamic element matching technology is utilized, errors caused by voltage drop at the two ends of a switch are reduced, the influence of channel charge injection is counteracted, a scaling type analog-to-digital converter design is provided for an analog-to-digital conversion part, and balance among power consumption, speed and precision is achieved. According to the method, a 10-bit successive approximation register analog-to-digital converter is used for measuring a numerical value and a change trend, and the numerical value and the change trend are analyzed, so that the expression effects of a current mirror structure, a transistor, a filter and the like are evaluated, the aging of the transistor is found in advance, and a clear direction is provided for future design improvement.

The invention provides a charge control electric field driven jet micro-nano 3D printing curved surface conformal multilayer circuit method and system. A high-precision conformal thin film dielectric layer is formed by utilizing charge injection electrowetting and contact electric field driving jet micro-nano 3D printing; and the high-resolution curved surface conformal circuit is manufactured by combining active residual charge elimination and non-contact electric field driving spray deposition micro-nano 3D printing. Through organic combination of active charge regulation and control and electric field driven jet micro-nano 3D printing, a high-precision conformal film dielectric layer and conductive layer conformal circuit and an interlayer interconnection circuit thereof are integrally printed. According to the curved surface conformal multilayer circuit manufacturing method, efficient, low-cost, high-precision and uniform manufacturing of the curved surface conformal multilayer circuit is achieved.

The invention discloses a charge control method and a digital control system based on a dual-active bridge resonant converter, and belongs to the technical field of dual-active bridge resonant converter control. According to the method, a resettable integrating circuit is used for sampling resonance current and converting the resonance current into integrating voltage which is in a linear relation with charge injection quantity, and an integrating capacitor is discharged and reset before each time of injection; superposing the integral voltage and the ramp voltage; comparing the superposed signal with a threshold voltage output by a current loop through a comparator, and when the superposed signal reaches a threshold value, triggering to generate a PWM signal and switching the working mode of the converter; a switching tube is controlled to act according to a PWM signal, a switching time sequence is dynamically adjusted, effective control over transmission power is achieved, and a digital control system for achieving the method is established. According to the method, rapid dynamic response, efficient power transmission and stable operation of the dual-active bridge resonant converter are realized by controlling resonance current integration and a switching time sequence, and the energy conversion efficiency and the system reliability are effectively improved.

The invention belongs to the technical field of organic semiconductors, and discloses a compound with a benzobisoxazole structure and an organic electroluminescent device containing the compound. The compound with the benzobisoxazole structure has the following mechanism: # imgabs0 #, which is used as a charge transport material and a charge injection material in the organic electroluminescent device, especially as a hole injection layer material, and can greatly improve the voltage, service life and other properties of the organic electroluminescent device.

The invention belongs to the technical field of electrical experiments, and particularly relates to an insulating material charge accumulation and flashover device and method under different tangent and normal electric fields, an insulating sample wafer of the device is arranged on a surface flashover assembly, and the surface flashover assembly is provided with an electrode assembly with an adjustable inclination angle; a lower plate electrode is arranged in the middle of an insulating support, a supporting rod assembly vertically penetrates through a middle through hole of the lower plate electrode to make contact with a polytetrafluoroethylene insulating plate, an insulating sample piece is arranged above the polytetrafluoroethylene insulating plate, the polytetrafluoroethylene insulating plate is hinged to the lower plate electrode, and the lower end of the supporting rod assembly is connected with a rotary driving mechanism. The rotary driving mechanism drives the supporting rod assembly to move to incline the insulating sample, and the lifting driving mechanism drives the supporting rod assembly to vertically move to enable the insulating sample to be in contact with the electrode assembly; the device has the capabilities of charge injection and charge measurement of the insulation sample wafer and measurement of flashover voltage and initial voltage along the surface of the insulation material under different tangential and normal electric fields.

The invention belongs to the field of integrated circuits, and particularly relates to a charge pump circuit for a phase-locked loop, a charge pump module, the phase-locked loop and a communication chip. The charge pump circuit adopts a source switch single-end topology, and a numerical control current source DAC with an adaptive compensation circuit and two rail-to-rail operational amplifiers are applied. According to the source electrode switch single-end topology, the switch time sequence is dynamically optimized through a three-state working mode, and the charge injection effect and clock feed-through interference are remarkably reduced; the numerical control current source realizes multi-stage high-precision programmable current output according to a control code, responds to the change of output voltage in real time by utilizing a self-adaptive compensation mechanism, and maintains the stability of charging and discharging current; the rail-to-rail operational amplifier eliminates the common-mode constraint in a full-swing input range by connecting an NMOS-PMOS differential pair structure in parallel. The charge pump circuit overcomes the defects of a charge pump circuit adopted in an existing phase-locked loop in the aspects of output swing, stability and the like, static power consumption can be reduced to the microampere level, and the advantages are obvious.

The invention provides a planar electrode for spinal cord electrical stimulation and a preparation method thereof, and belongs to the technical field of medical instruments, and specifically, the planar electrode comprises a flexible substrate, electrode stimulation points, a conductive circuit, a bonding pad and a flexible insulating layer; a modification layer is deposited on the upper surface of the electrode stimulation point, the modification layer forms a grass-shaped morphology with forest leaves, and the modification layer is a platinum layer or a platinum-iridium alloy layer. A platinum layer or a platinum-iridium alloy layer is adopted as a modification layer, the effect of reducing impedance can be achieved, compared with a traditional plane morphology, the grass-shaped morphology with the forest blades can greatly increase the contact area between a film layer and tissue, the impedance is effectively reduced, dissipation of current on an electrode and a biological tissue interface can be reduced through the low impedance, and the service life of the electrode and the biological tissue interface is prolonged. Charge injection efficiency is improved, heating is reduced, tissue thermal damage is avoided, meanwhile, the platinum-iridium alloy material is reversible in chemical reaction in the electrical stimulation process, and toxic substances or material loss caused by the reaction cannot be generated.

The invention discloses a detection method, device and equipment for an antistatic high-performance resin line pipe, and the detection method for the antistatic high-performance resin line pipe comprises the following steps: carrying out multidirectional sampling on the resin line pipe to obtain an original sample strip group and a pretreated sample strip group; carrying out multi-wavelength Raman spectrum analysis; calculating estimated conductivity and specific surface area; differential electrostatic charge injection is carried out; monitoring a charge dissipation process; and calculating the comprehensive anisotropic conductivity index. According to the technical scheme, the conductivity of the antistatic high-performance resin line pipe in different directions can be effectively detected and evaluated, and it is ensured that the antistatic high-performance resin line pipe dissipates static electricity comprehensively and evenly in practical application.

The invention discloses a structure control piece of a crimping type interface connector and a manufacturing process, and the manufacturing process comprises the steps: enabling a plurality of inner conductor terminal monomers to be distributed and installed in a positioning bracket according to a preset array, and forming a preliminary positioning unit of a terminal; preassembling an interface connector and a heat dissipation type shielding cover, then integrally loading the positioning bracket and the terminal into a cavity of an injection mold, and carrying out secondary clamping and fixing on the terminal through a guide structure and an elastic micro-clamp which are arranged in the injection mold; a segmented injection molding mode is adopted, pre-filling injection molding is conducted on the peripheral area of a terminal at low pressure and low speed, a terminal array is preliminarily wrapped and fixed by melt, then the main injection molding stage is switched to fill a remaining cavity of a mold, the temperature of the mold is adjusted through a partition temperature control system in the process, and an integrated main body structure is formed; therefore, melt impact and residual stress are reduced, reliable sealing of the terminal and the shell is ensured, the conditions of inaccurate alignment and poor plugging during crimping assembly with a PCB are avoided, and the assembly consistency and the yield of a production line are improved.

The invention relates to the technical field of solar cells, in particular to a self-assembly transport layer solution, a non-fullerene organic solar cell and a preparation method of the non-fullerene organic solar cell, the self-assembly transport layer solution comprises a solute, a solvent and a solvent additive, the solute is [4-(3, 6-diphenyl-9H-carbazole-9-yl) butyl] phosphoric acid (Ph-4PACz), the solvent is ethanol, the solvent additive is dibutyl ether (DBtE), and the concentration of the self-assembly transmission layer solution is 0.3 mg / mL. When the solution is coated on the surface of an electrode (such as an ITO (Indium Tin Oxide) electrode or other suitable electrode materials), Ph-4PACz molecules can form an ordered monomolecular layer. These molecular layers contribute to optimizing charge injection, in particular hole injection, thereby functioning as a hole transport layer (HTL) in organic solar cells. The solution method is simple in preparation and has greater potential in the aspect of large-scale preparation.

An electrostatic atomizer electrostatically atomizes a fluid into a charged spray, wherein the charged spray includes a plurality of charged droplets. The electrostatic atomizer includes a chamber forming an inlet and an exit aperture, wherein the chamber is configured for fluid to flow into the chamber from the inlet and to flow out of the chamber from the aperture. An emitter electrode is in liquid contact with the fluid in the chamber and injects an electrical charge into the fluid in the chamber. An impedance circuit is coupled to the chamber and configured to obtain a voltage difference between the emitter electrode and the exit aperture, wherein the voltage difference is at least a minimum voltage threshold.

The invention relates to a method for evaluating space charge injection characteristics of a polypropylene elastomer blending material for a cable. The method comprises the following steps: acquiring current information in a to-be-tested sample and sensor signal information of a piezoelectric sensor corresponding to the to-be-tested sample under the condition that the to-be-tested sample made of a polypropylene elastomer blending material is in a preset test condition; determining space charge distribution information according to the sensor signal information; and determining a space charge injection characteristic evaluation result according to the current information and the space charge distribution information. By adopting the method, the real injection current can be accurately analyzed based on the current in the to-be-evaluated sample under the preset test condition, and the accurate charge injection rate is obtained, so that charge transport in the to-be-evaluated sample is accurately analyzed by using the charge injection rate, and the accuracy of a space charge injection characteristic evaluation result is further improved.

The invention discloses an insulating material flashover experiment device and method for measuring flashover voltage and initial voltage. The device comprises a metal tank body, an insulator upper cover, an insulating sample piece, a charge injection assembly, a charge measurement assembly, a surface flashover assembly, a sample piece bearing assembly and a flashover voltage and initial voltage measurement assembly. The flashover voltage and initial voltage measuring assembly is assembled on the insulating sealing cover of the metal tank body; the sample piece bearing assembly is arranged on the surface flashover experiment assembly; and the insulating sample piece is arranged on the sample piece bearing assembly. By adopting the insulating material flashover experimental device for measuring the flashover voltage and the initial voltage, the flashover voltage and the initial voltage along the surface of the insulating sample piece can be measured, the supporting form of the insulating sample piece is optimized, the research range of the device is widened, and the working efficiency of the device is improved. Through an insulating material surface flashover experiment, change characteristics of insulating medium surface flashover characteristics are determined, so that effective theoretical guidance is provided for insulation optimization design of the basin-type insulator.

The invention belongs to the technical field of gate voltage bootstrapped switches, and discloses a high-performance gate voltage bootstrapped switch for a Sigma-Delta ADC, a PMOS switch circuit is introduced into an NMOS type gate voltage bootstrapped switch circuit to form a complementary switch, and the complementary switch is used for counteracting an output error caused by a clock feed-through effect of an NMOS switch and the PMOS switch; virtual tubes are added to the input and output ends of the NMOS switch and the PMOS switch by using an inverter chain and are used for absorbing channel charges of the switch tubes; the substrate potential of the NMOS switch and the substrate potential of the PMOS switch are connected into the switching circuit, so that the substrate potential of the switching tube is switched between GND and input voltage Vin, and on the premise that sampling / maintaining precision is guaranteed, interference of clock feed-through and charge injection in the switching tube on output signals is restrained, and the linearity of the grid voltage bootstrapped switch is improved.

A wavelength-tunable optical filter includes a plate-like first component, a plate-like second component, a first reflective film, and a second reflective film. The wavelength-tunable optical filter also includes a first transparent electrode and a second transparent electrode that serve as a voltage applying part that applies a voltage in the thickness direction of the first component, and as a charge injecting part that injects electric charge into the first component. The first transparent electrode is formed on a first incident surface, and is ohmically connected to the first component. The second transparent electrode is formed between a first emission surface and the first reflective film, and is ohmically connected to the first component.

The present invention discloses a method and system for obtaining the charge injection barrier at a metal / polymer interface. The method comprises the following steps: obtaining a metal / polymer interface model based on first principles, according to the metal / polymer interface for which the charge injection barrier is to be obtained; obtaining the metal surface work function, vacuum energy level difference, polymer electron affinity, and ionization energy based on first principles, the polymer molecular chain structure model, and the metal / polymer interface model; and calculating the charge injection barrier at the metal / polymer interface based on the obtained physical quantities and the definition of the metal / insulating material charge injection barrier in energy band theory. This method solves technical problems in the prior art, such as the significant influence of external interference on the results; the difficulty in standardizing the experimental process for different polymer materials and metal electrode materials; and the lack of a complete theoretical basis for the method.

The invention provides an organic electrochemical transistor and stimulating electrode array based on PEDOT: PSS and a preparation method thereof. The electrode array comprises an OECT based on PEDOT: PSS and a stimulating electrode with a PEDOT: PSS coating, a PEDOT: PSS channel and the PEDOT: PSS coating which are made of the same modified PEDOT: PSS material are different in thickness, and the material is obtained through the following steps that ionic liquid is taken and diluted with deionized water, the diluted ionic liquid is doped into PEDOT: PSS dispersion liquid, then a cross-linking agent is added, and full stirring is conducted. A pit with submicron depth is etched in a stimulating electrode area on a poly-p-xylylene substrate, only one-time spin coating of a PEDOT: PSS solution is needed, or the poly-p-xylylene substrate is not etched, multiple times of spin coating are carried out through a photoresist mask, and OECT channels and stimulating electrode modified coatings with different thicknesses in an electrode array can be obtained at the same time. And the advantages of high signal-to-noise ratio of the OECT and strong charge injection capability of the modified stimulating electrode can be fully exerted, so that co-optimization of the collection performance of the OECT and the electrical stimulation performance of the stimulating electrode is realized.

A sense amplifier circuit, memory device and related operation methods are provided. The sense amplifier circuit includes an amplification circuit for amplifying a voltage signal and a compensation circuit coupled to the amplification circuit. The amplification circuit includes a first inverting amplifier and a second inverting amplifier cross-coupled with each other, with the first inverting amplifier connected to a first bitline and the second inverting amplifier connected to a second bitline. The compensation circuit includes a first, a second, a third, and a fourth switch circuits, and is configured to generate a compensation voltage between the first bitline and the second bitline by conducting charge injections through operating the switch circuits to compensate an input-referred offset voltage of the amplification circuit.

The present application relates to a kind of organic electron transport material and its preparation method and application, which is with triazine group as center core, pyridine is the conjugated organic small molecule material of outer ring substitution, the synthetic route of the organic small molecule material is simple, low in cost, higher yield, less environmental pollution;With the organic small molecule as electron transport layer, the problem of charge injection imbalance is well solved, especially in quantum dot light emitting diode (QLEDs), greatly improves the QLEDs device performance and stability, which has extremely great significance to the application field of QLEDs.

Analog front-end (AFE) system with an anti-aliasing filter circuit including a filter bypass switch configured to provide charge injection and / or clock pass-through independent of an input signal, wherein the AFE system comprises: at least one sampling capacitor of an analog-to-digital converter (ADC) circuit configured to sample an output of the anti-aliasing filter circuit; an amplification or buffer circuit with an input for receiving the input signal; and the anti-aliasing filter circuit coupled to an output of the amplification or buffer circuit, wherein the filter circuit comprises the following: a filter resistor; a filter capacitor coupled to one terminal of the filter resistor; and the filter bypass switch, which is connected in a bootstrapped configuration to pull a control terminal of the filter bypass switch above or below a supply voltage, wherein the filter bypass switch is connected in parallel to the filter resistor, wherein the filter bypass switch has an ON state and an OFF state, wherein, when in the ON state, the filter bypass switch is configured to bypass the filter resistance, allowing the amplification or buffer circuit to drive the at least one sampling capacitor through the filter bypass switch; and wherein, when in the OFF state, the filter bypass switch is designed to cause the amplification or buffer circuit to drive the at least one sampling capacitor through the filter resistor.

The embodiment of the invention provides a preparation method of an organic thin film transistor and the organic thin film transistor, and the method comprises the steps: providing an insulating substrate, and manufacturing a gate electrode on the insulating substrate; preparing a dielectric layer on the surfaces of the insulating substrate and the gate electrode; a semiconductor layer is prepared on the surface of the dielectric layer through a preset solvent and a flexible mold in an imprinting mode, a charge injection layer is deposited on the semiconductor layer, and the preset solvent at least comprises 4-vinylphenol and polyvinylpyrrolidone; and imprinting and preparing a conductive layer on the surface of the charge injection layer. According to the embodiment of the invention, the preparation of the organic thin film transistor is realized through a multi-layer imprinting technology, and the damage to the semiconductor layer in the preparation process is avoided.

To provide a storage device capable of holding data for a long period.SOLUTION: The semiconductor device includes a memory element and a transistor functioning as a switching element for controlling supply, holding, and release of electric charge in the memory element. The transistor includes a second gate electrode for controlling the threshold voltage in addition to a normal gate electrode and includes an oxide semiconductor in an active layer; therefore, the off-state current is extremely low. In the above memory device, data is stored not by injecting charge into a floating gate surrounded by an insulating film at high voltage but by controlling the amount of charge in a memory element through a transistor with extremely low off-state current.SELECTED DRAWING: Figure 1

The invention provides a Kelvin drip generator corona discharge enhancement-based friction nanometer generator and a preparation method thereof. Wherein the generator comprises a Kelvin water dripping machine, high voltages at two ends of the Kelvin water dripping machine are respectively coupled to a back gate electrode and a suspension needle, a non-uniform electric field is constructed in a needle tip-FEP area, corona discharge is triggered, charges are directionally injected into an FEP / liquid drop system, and the FEP / liquid drop system is charged. The injected charges are connected in parallel into the device through a multi-branch capacitor network formed by the back gate electrode, the upper electrode / the lower electrode and the FEP. According to the invention, through cooperation of exogenous pumping and liquid drop charge shuttling (DSG), single-drop transfer charge and open-circuit voltage are significantly improved, and direct-current stepped accumulative output is maintained.

The application relates to a method for evaluating space charge injection characteristics of a polypropylene elastomer blend material for cables. The method comprises: obtaining current information in a to-be-tested sample made of a polypropylene elastomer blend material and sensor signal information of a piezoelectric sensor corresponding to the to-be-tested sample under a preset test condition; determining space charge distribution information according to the sensor signal information; and determining a space charge injection characteristic evaluation result according to the current information and the space charge distribution information. The method can accurately analyze the real injected current based on the current in the to-be-tested sample under the preset test condition, obtain an accurate charge injection rate, accurately analyze the charge transport in the to-be-tested sample by using the charge injection rate, and thus improve the accuracy of the space charge injection characteristic evaluation result.

The present invention relates to compounds of formula (I) as well as to their use as organic doping agent, as transport layer as absorbing layer, as charge injection layer, as organic semiconductor itself, organic semiconductive matrix material or as hole transport layer. The invention also relates to organic semiconductive materials, electronic components, organic field-effect transistor, semiconductor unit and electroluminescent arrangement in which the compounds of formula (I) are used.

The present invention relates to the technical field of optoelectronic material applications, and discloses a polycyclic compound and an organic electroluminescent device thereof. By introducing a phenanthro-fused five-membered heterocyclic core structure with a relatively high triplet energy level and finely regulating the core structure using different types of electron donor-acceptor groups, the polycyclic compound provides a luminescent host material with excellent comprehensive performance, effectively solving the problems such as high driving voltage and low fluorescence quantum efficiency caused by difficult charge injection in current luminescent host materials, achieving the technical effect of balancing luminescence efficiency and driving voltage, and having significant application value as a luminescent host material in organic electroluminescent devices.

Disclosed is a silicon carbide junction barrier Schottky diode including: a first-conductivity-type substrate; a first-conductivity-type epitaxial layer formed by epitaxial growth of silicon carbide doped with a first-conductivity-type impurity on the first-conductivity-type substrate; a charge injection region formed on the first-conductivity-type epitaxial layer and doped with the first-conductivity-type impurity at a higher concentration than a concentration of the first-conductivity-type impurity of the first-conductivity-type epitaxial layer; a second-conductivity-type junction region formed on the first-conductivity-type epitaxial layer to contact the charge injection region; a Schottky metal layer formed on the charge injection region and the second-conductivity-type junction region; an anode electrode formed on the Schottky metal layer; and a cathode electrode formed under the first-conductivity-type substrate.

The invention relates to an alternating current driven quantum dot electroluminescent device, and belongs to the technical field of luminescent devices. The device comprises a first tunneling heterojunction layer, a light-emitting layer and a second tunneling heterojunction layer, the first tunneling heterojunction layer comprises a tunneling layer A and a tunneling layer B; the second tunneling heterojunction layer comprises a tunneling layer C, a tunneling layer D and a tunneling layer E; the tunneling layer A and the tunneling layer D are independently made of an n-type conductive polymer material and / or an n-type metal oxide semiconductor material of which the work function is greater than 5.1 eV; the materials of the tunneling layer B and the tunneling layer E are independently p-type materials of which the highest occupied molecular orbital HOMO energy level is between-5.0 eV and-6.0 eV; and the tunneling layer C is made of an n-type electron transport material of which the lowest occupied molecular orbital (LUMO) energy level is-2.5 eV to-4.5 eV. The device provided by the invention effectively solves the problems of device attenuation related to carrier injection, charge injection imbalance relief, overhigh working voltage of the device and insufficient luminous intensity.

The present invention discloses a level shifter including a feedback capacitor, and belongs to the field of integrated circuits. In order to reduce duty cycle loss, the level shifter of the present invention includes a bias circuit, a main circuit and an acceleration module; the bias circuit includes a bandgap reference source and provides a bias current; the main circuit includes an AC path and a DC path, and mirrors the reference current; the acceleration module accelerates signal level switching by charge injection. The present invention can accelerate the level switching of high-speed signals, with extremely low delay and small duty cycle loss.

To provide an image forming apparatus capable of effectively removing deposits attached to a charged member. [Solution] The device comprises a photoreceptor having a charge injection layer containing conductive particles, a charging member in contact with the surface of the photoreceptor, a developing unit that develops an electrostatic latent image as a toner image, a transfer unit, and a control unit that controls the voltage applied to the charging member, and is capable of executing an image forming mode for transferring a toner image to a transfer member and a cleaning mode executed at a different timing from the image forming mode. In the cleaning mode, the control unit (i) periodically switches the voltage applied to the charging member within a range less than a discharge threshold relative to the surface potential of the photoreceptor before passing through the charging member, and (ii) sets the period of the voltage waveform pattern such that 0.05 ≤ Vpp_d / Vpp_t ≤ 0.865, where Vpp_t is the amplitude of the voltage and Vpp_d is the amplitude of the surface potential of the photoreceptor after passing through the charging member.