2 results about "Band engineering" patented technology

The application provides a two-dimensional Janus material and an energy level parameter prediction method and device thereof, a mother body and a Janus material crystal structure are constructed into a graph structure, after improving node / edge features, local information is aggregated through a graph attention network with edge embedding, global attention mechanism is used to obtain graph-level embedding, then difference features are obtained by subtracting the two embeddings, and a multilayer perception machine is used to predict a conduction band bottom offset, a valence band top offset and a vacuum energy level difference, in addition, a multi-task weighted loss optimization model is used. The application uses differential learning of the mother body-Janus pairing, reduces the calculation cost, improves the prediction accuracy and generalization ability, can realize high-throughput screening, and supports Janus material energy band engineering design.

The application discloses a kind of based on heterostructure energy band engineering regulation and control negative photoconductive device, belong to optoelectronic device and semiconductor hetero integration field, including substrate, wide band gap photosensitive material layer, narrow band gap two-dimensional channel material layer, electrode;Two material layers contact and form heterojunction and pass energy band structure and Fermi level matching design, so that the device is in no light, two-dimensional channel material layer forms stable conductive channel under the action of source-drain electrode bias voltage, and the device presents normal conduction characteristic;Under illumination, photosensitive material layer absorbs photon and generates the photo-generated carrier opposite to two-dimensional channel material layer multi-subtype, and the photo-generated carrier is injected into two-dimensional channel material layer under the driving of interface built-in electric field, and is combined with two-dimensional channel material layer multi-subtype, reduces two-dimensional channel material layer carrier concentration and current, realizes negative photoconductive effect.The device structure is simple, repeatability is strong, process compatible, suitable for sensing storage integration and brain-like computing system.