42 results about "Band engineering" patented technology

A method utilizing a common gate electrode material with a single work function for both the pMOS and nMOS transistors where the magnitude of the transistor threshold voltages is modified by semiconductor band engineering and article made thereby.

The invention discloses a photovoltaic device and a solar battery comprising the photovoltaic device. The photovoltaic device comprises three regions including a transparent electrode region, a window region and an absorbing region, wherein at least one face of six faces of in-light faces and back faces of the three regions is provided with a low-dimensional composite interface structure formed by contacting nano wires or nano micro-ball points. The solar battery prepared by the photovoltaic device disclosed by the invention utilizes a bionic low-dimensional composite interface structure to collect sunlight and takes the nano wires or the nano micro-balls as surface plasmons, so as to further enhance light trapping effects. Meanwhile, controllable doping can be formed through controllable point contact and a potential field which can reduce a hole and electron compounding possibility and is good for transmitting holes or electrons is provided, so that the separating efficiency and the transportation capability of electron holes are improved and the efficient photovoltaic effect is realized; and through regulating and controlling a doping interface, energy band engineering is adjusted, the photovoltaic current and/or voltage is improved and the photovoltaic conversion capability is improved.

A nonvolatile memory cell is provided. The cell has a charge filter, a tunneling gate, a ballistic gate, a charge storage layer, a source, and a drain with a channel defined between the source and drain. The charge filter permits transporting of charge carriers of one polarity type from the tunneling gate through the blocking material and the ballistic gate to the charge storage layer while blocking the transport of charge carriers of an opposite polarity from the ballistic gate to the tunneling gate. Further embodiments of the present invention provide a cell having a charge filter, a supplier gate, a tunneling gate, a ballistic gate, a source, a drain, a channel, and a charge storage layer. The present invention further provides an energy band engineering method permitting the memory cell be operated without suffering from disturbs, from dielectric breakdown, from impact ionization, and from undesirable RC effects.

The invention discloses a gallium nitride semiconductor light-emitting diode with a tilt quantum well structure. By means of an energy band engineering design, an InGaN quantum well is designed to be a tilt structure so as to modulate the forbidden band width of the well. According to the invention, a polarization electric field produced due to a polarization effect in the quantum well can be overcome so as to make the distribution of electrons and holes more uniform, and thus, the quantum efficiency of the light-emitting diode is increased.

The invention discloses a ferroelectric photovoltaic device which comprises an upper electrode, a lower metal electrode and a ferroelectric material between the two electrodes. The ferroelectric material is lead lanthanum zirconate titanate (PLZT), lead zirconate titanate (PZT), barium titanate (BTO) or bismuth ferrite oxide (BFO), etc., the upper electrode is made of a transparent electrode material such as indium tin oxide (ITO) or aluminum doped zinc oxide (AZO), and the lower metal electrode is made of the metal with a low work unction such as Ag, Al or Mg. The invention also discloses a preparation method of the ferroelectric photovoltaic device. According to the invention, the photovoltaic characteristic of this kind of ferroelectric photovoltaic device can be improved through material design and energy band engineering based on the photoelectric effect of the metal with the low work function and the photovoltaic effect of the ferroelectric material; the light response wavelength of the traditional broad-band gap ferroelectric photovoltaic device can be extended from the range of ultraviolet light to the range of visible light; and the application field of the ferroelectric photovoltaic device can be enlarged.

The invention discloses a preparation method of a titanium dioxide/titanium nitride composite film with adjustable band gaps, belonging to the field of semiconductor energy-band engineering. According to the preparation method, a titanium nitride film is deposited on a substrate by adopting a radio-frequency magnetron sputtering method, and composite films with different optical band gaps can be obtained by carrying out annealing treatment on the film at different temperatures and time in air. The composite film shows excellent band-gap-controlled adjustment characteristics in a treatment process at specific temperature and time for annealing; and the preparation method has the advantages of simplicity, fastness, low cost, stronger controllability and excellent application prospect in surface self-cleaning materials and the energy source and environment field of the preparation of hydrogen by catalytically decomposing water and the degradation of harmful organic substances under the conditions of visible light.

Methods and apparatus on charges injection using piezo-ballistic-charges injection mechanism are provided for semiconductor device and nonvolatile memory device. The device comprises a strain source, an injection filter, a first conductive region, a second conductive region, and a third conductive region. The strain source permits piezo-effect in ballistic charges transport to enable the piezo-ballistic-charges injection mechanism in device operations. The injection filter permits transporting of charge carriers of one polarity type from the first conductive region, through the filter, and through the second conductive region to the third conductive region while blocking the transport of charge carriers of an opposite polarity from the second conductive region to the first conductive region. The present invention further provides an energy band engineering method permitting the devices be operated without suffering from disturbs, from dielectric breakdown, from impact ionization, and from undesirable RC effects.

The invention provides a longitudinal nano-pillar 1T-DRAM device and array based on SiGe energy-band engineering. A longitudinal nano-pillar transistor is adopted, laminated layers formed through epitaxy serve as a channel region and a drain region respectively, large space is provided for design of the channel region and the drain region, and many implementation schemes are provided for promoting the 1T-DRAM performance. Meanwhile, the structure of the longitudinal transistor is beneficial to integration of the SiGe channel region; epitaxy SiGe is adopted as the channel region, a potential well of a hole is formed in the channel region by means of the difference between the valence band of the SiGe and the valence band of Si, and therefore the current difference between the 1-reading state and the 0-reading state of a 1T-DRAM.

A rail clamping device used for a caterpillar band engineering machine comprises a left rail clamp (4) and a right rail clamp (8), the left rail clamp (4) and the right rail clamp (8) respectively comprises an upper plate, a side plate and a lower plate, each upper plate (8-0), the corresponding side plate (8-3) and the corresponding lower plate are fixedly connected or formed in an integrated mode to be of a semi-I-shaped structure, each side plate is perpendicular to the corresponding upper plate, a pair of pull rod holes are formed in a spaced mode in the length direction of the side plates, and a reinforcing rib plate is perpendicular to the side plates and arranged near the pull rod holes; a pull rod (7) penetrates through the side plate of the left rail clamp (4) and the side plate of the right rail clamp (8) and is fastened, the pull rod is sleeved with a spacer bush (6), and the spacer bush (6) is located between the side plate of the left rail clamp and the side plate of the right rail clamp; the included angle between the lower surface of the lower plate and the upper surface of the upper plate of the left rail clamp is minus 2 degrees-minus 15 degrees, and an axial limit plate is fixedly connected to the position, opposite to a caterpillar wheel of the engineering machine, of the lower end of the outer surface of each side plate. The rail clamping device is simple in structure and convenient to repair.

The invention relates to an InP-based semiconductor laser structure with a low contact resistance. The InP-based semiconductor laser structure comprises a semiconductor laser structure epitaxially grown on an InP substrate and a metal electrode layer manufactured on the semiconductor laser structure. The semiconductor laser structure mainly comprises an n-InP buffer layer, an n-type limiting layer, an n-type waveguide layer, a quantum well active layer, a p-type waveguide layer, a p-type limiting layer, a p-type corrosion barrier layer, a p-type cladding layer and a novel p-type electrode contact layer which are successively manufactured from bottom to top. The invention provides a novel p-type electrode contact layer structure and a manufacturing method thereof. Energy-band engineering isused, a compressive strain and a band gap narrowing effect are introduced into a p-type electrode contact layer, and a transition contact layer technology is introduced to improve ohmic contact performance in order to solve a problem that epitaxial quality of a thin film of the contact layer is deteriorated under a large compressive stress level so that a contact resistance of a semiconductor laser chip is reduced, a heat dissipation capability and reliability are improved, and a service life is prolonged.

A method of providing miniaturized size down to nanoscale electronic materials, which may be easily incorporated into the future ever-scaling down power electronics, microelectronics and nanoelectronics device systems, is disclosed. A linear or nonlinear nanoparticle (nanowire) junction design that allows precise controllability over an electronic device (e.g., a varistor) performance, which is typically difficult for the traditional sintered bulk varistor, is also disclosed. A localized doping and chemical modulation, across junctions allows flexible and tunable design over the nanoscale grain boundary band engineering is further disclosed. Furthermore, a method of operating memory, using electrostatic potential modulated coding and decoding across periodic nanoparticle grain boundary linearly, is also disclosed.

The invention relates to a PEDOT-ZnO ultraviolet light detector of a flexible thin film type, and a preparation method therefor. The detector comprises a flexible photosensitive film and an electrode on the film. Specifically, the flexible photosensitive film is a PEDOT-ZnO thin film which is disposed on a transparent flexible plastic film through spin coating, wherein the ratio (by mass ratio) of PEDOT to ZnO is 7: 1. The electrode is an Au/Ti interdigital electrode. There is a barrier between pure PEDOT and ZnO materials, and the barrier greatly affects the photoconductive property of a PEDOT and ZnO composite system. The materials in the method are doped based on energy-band engineering design, thereby eliminating a raw interference barrier of the two materials, and enabling the detector to have excellent photoconductive property.

The invention discloses a DFB laser for improving the high-temperature characteristics of a laser, and the epitaxial structure of the DFB laser comprises an InP substrate which is sequentially provided with a buffer layer, a grating layer, a lower limiting layer, a lower waveguide layer, a quantum well, an upper waveguide layer, an electron blocking layer, a corrosion blocking layer, a ridge waveguide layer, a potential barrier gradient layer and an ohmic contact layer from the bottom to the top; the electron blocking layer is a superlattice formed by AlAs0.56Sb0.44 with ternary components andAlxGa(1-x)AsySb(1-y) materials with quaternary components. According to the epitaxial structure of the DFB laser, a wide-bandgap superlattice electron blocking layer is designed through energy band engineering to limit carriers, on one hand, the probability that the carriers overflow out of a quantum well active region at high temperature is reduced through a high potential barrier, on the otherhand, the valence band potential barrier is reduced through superlattices, hole injection into the active region is facilitated, the high-temperature characteristic of the laser can be effectively improved, and the DFB laser can work normally within the temperature range of -40 DEG C to 115 DEG C.

Disclosed is back surface field GaSb thermal photovoltaic cell. The thermal photovoltaic cell comprises a substrate, a back electric field layer, a back electrode, an active region and a front electrode, wherein the back electric field layer is manufactured on the back surface of the substrate; the back electrode is manufactured on the back electric field layer; the active region is manufactured on the upper surface of the substrate; and the front electrode is manufactured in the middle of the front surface of the active region, wherein the size of the front electrode is smaller than that of the active region. According to the thermal photovoltaic cell, an nn+ junction is added on the back surface of the cell, and a high-low junction electric field is formed with the original built-in electric field, so that a hole barrier is provided, and the collection efficiency of photon-generated carriers is improved by utilizing energy band engineering; and meanwhile, due to the fact that the doping concentration near the back electrode is high, the width of the barrier region is smaller, and run through of the barrier is performed by electrons via a channel tunnel, so that better ohmic contact is formed between the GaSb and the back electrode metal, thereby improving the efficiency of the cell.

The invention discloses a preparation method of a novel InGaN-based photo-anode, which is specifically implemented according to the following steps of: 1, carrying out constant-voltage etching on a GaN multi-layer structure by adopting a photoelectrochemical etching technology in an acid solution to prepare a mesoporous GaN mirror; and 2, by taking a mesoporous GaN mirror as a substrate, firstly,epitaxially growing an InGaN/GaN layer by adopting an MOCVD technology, modulating an In component through energy band engineering, modulating a band gap of the In component, and then, evaporating anohmic contact electrode by adopting an electron beam evaporation technology to prepare an InGaN-based photo-anode. and the method provided by the invention can be used for preparing the photo-anode electrode with low starting voltage, high efficiency and strong stability.

The invention discloses a flexible ZnO/NiO/ZnO multifunctional triode which structurally comprises an emitting electrode, a base electrode, a collecting electrode and a flexible conductive substrate in sequence from top to bottom. According to the flexible conductive substrate, a conductive layer is arranged on the flexible substrate. The emitting electrode is made of ZnO, the base electrode is made of NiO, the collecting electrode is made of ZnO, one side of the emitting electrode, one side of the base electrode and one side of the collecting electrode are aligned, and electrodes are arrangedon the emitting electrode and the conductive layer of the flexible substrate. According to the invention, various functional applications of the transistor in photoelectric detection, force and electricity sensing, nano power generation and the like are realized through the coupling effect of a piezoelectric effect and semiconductor energy band engineering.

The invention relates to a double-spectrum thin film type multi-junction photovoltaic device structure which is named as a double-spectrum quantum well cascade composite junction. The structure comprises three PN junctions with a multi-quantum well structure, and the three PN junctions respectively form absorption junctions; a tunnel junction is arranged between the absorption junctions, so that the two adjacent absorption junctions are electrically communicated to form a free carrier path; in addition, by means of energy band engineering design, the electron-hole energy level difference of the absorption junction located in the middle is larger than that of the absorption junctions on the two sides. The structure can greatly improve the quantum efficiency of internal photoelectric conversion, can adapt to multispectral incident light, including solar spectrum and various human illumination light sources, such as LED lamps, incandescent lamps, halogen lamps and fluorescent lamps, can automatically realize current matching among multi-junction batteries under the spectrum conditions of various light sources, and can automatically realize current matching among the multi-junction batteries when different light sources are switched. And high photoelectric conversion efficiency is dynamically realized.

The embodiment of the invention discloses a semiconductor memory, a ferroelectric field effect transistor and a ferroelectric film capacitor. The ferroelectric field effect transistor comprises a substrate, a source electrode, a drain electrode, an insulating layer, a first ferroelectric layer, an interlayer, a second ferroelectric layer and a grid electrode layer, the source electrode and the drain electrode are formed in the substrate, the insulating layer is located on the substrate, the projection of the insulating layer is located between the source electrode and the drain electrode, and the first ferroelectric layer, the interlayer, the second ferroelectric layer and the grid electrode layer are sequentially arranged on the insulating layer. The conduction band bottom of the interlayer is higher than or equal to the conduction band bottoms of the first ferroelectric layer and the second ferroelectric layer, and the difference between the conduction band bottoms is smaller than or equal to 0.3 eV. The valence band top of the interlayer is lower than or equal to the valence band tops of the first ferroelectric layer and the second ferroelectric layer, and the difference between the valence band tops of the first ferroelectric layer and the second ferroelectric layer is smaller than or equal to 0.3 eV. According to the embodiment of the invention, charge trapping is inhibited through energy band engineering, so that the anti-fatigue characteristic of the ferroelectric layer can be improved, and the performance of a corresponding element is improved.

The invention discloses a preparation method for an LED containing a PMOT:PPV/ZnO:Cu/ZnO:Al heterojunction. The method is characterized by comprising the following steps: a ZnO:Cu/ZnO:Al heterojunction grows on an ITO substrate, spin-coating of a mixed solution of PMOT and PPV on the ZnO:Cu polycrystalline layer of the ZnO:Cu/ZnO:Al heterojunction is carried out for heat treatment; and finally, aTi electrode is plated on the ZnO:Cu polycrystalline layer surface. The step of growing the ZnO:Cu/ZnO:Al heterojunction on the ITO substrate comprises substeps: an ZnO:Al polycrystalline layer growson the ITO substrate; the ZnO:Al polycrystalline layer is then put into a mixed solution of zinc acetate and copper nitrate; a ZnO:Cu polycrystalline layer grows on the surface of the ZnO:Al polycrystalline layer; and finally, the ZnO:Cu/ZnO:Al heterojunction is obtained on the ITO substrate. Through spectral modulation based on semiconductor energy band engineering, a main luminescence peak of 490nm is realized, and a more excellent photobiological effect can be provided. The preparation method disclosed by the invention is simple and safe in process, low in price of used equipment and raw materials and suitable for industrial large-scale preparation.

The invention is applicable to the technical field of semiconductor devices, and discloses an enhanced field effect transistor. The enhanced field effect transistor sequentially comprises a substrate,a channel layer, a barrier layer, a passivation layer and at least one layer of preset structure from bottom to top. The preset structure sequentially comprises an insulating dielectric layer and a field plate from bottom to top. A source electrode and a drain electrode are arranged on the channel layer. A gate electrode is arranged on the barrier layer. The passivation layer is positioned between the source electrode and the gate electrode and between the gate electrode and the drain electrode. The insulating dielectric layer covers the gate electrode. A carrier-free region and a carrier region exist in the channel layer between the source electrode and the drain electrode, a carrier-free region exists in the channel layer except the part right below the gate electrode, and a carrier region exists in the channel layer right below the gate electrode. The field plate is arranged right above the carrier-free regions. According to the enhanced field effect transistor provided by the invention, an enhanced device is realized by using transverse energy band engineering, and the breakdown voltage can be increased and the reliability of the device can be improved by using the field platestructure.