292 results about "Photovoltaic effect" patented technology

The present disclosure concerns a means to design, engineer and use antireflective or metallo-dielectric coatings incorporating metallic, nonmetallic, organic and inorganic metamaterials or nanostructures to manipulate light in solar thermal and photovoltaic materials. Such metallic, nonmetallic, organic or inorganic metamaterials or nanostructures could be used to manipulate light for photovoltaic effects on or in any material or substrate. Dielectric coatings containing metallic nanostructures could be used to improve the efficiency of solar cells and to influence or control such characteristics as optical and thermal absorption, conduction, radiation, emissivity, reflectivity and scattering.

The system mainly consists of the solar energy photo-volt battery (PV) and the semi-conductor thermo electric generator module (SG). The hot end insulated heat-lead board of SG contacts with the bottom electrode of PV via the heat-lead silica gel. PV and SG connect to the power supply circuit via a lead. The hot end insulated heat-lead board of SG contacts with the radiator via the heat-lead silica gel. The energy produced by PV and the energy output by SG and boosted by a DC/DC circuit are stored respectively into the different lithium ion batteries. Via control and distribution by the consequent power circuit, these energies are converted into the DC working voltage. The invention utilizes fully the low-level heat energy and solves the problem of PV performance under hi temperature. The invention raises the generating efficiency and extends PV life.

The invention relates to a grapheme/MoS2/Si heterojunction thin-film solar cell and a manufacturing method thereof. A chemical vapor deposition method that gases carry liquid phase MoS2 molecules is adopted, the flow and the response speed can be well controlled, and an MoS2 thin film which is ultra-thin, even in large area, smooth in surface and small in roughness is obtained. Interface special shapes of a p-MoS2/n-Si heterojunction are effectively reduced, leak currents are reduced, and the photoelectric conversion efficiency of the solar cell is improved. The grapheme film which is even in large area and good in transparency and electric conductivity and obtained with the chemical vapor deposition method is used as a transparent electric conduction electrode. The MoS2-Si heterojunction has strong collecting function on photoproduction electrons and holes, and the photovoltaic effect and the conversion efficiency of the solar cell are improved. The solar cell has the open-circuit voltage of 0.98V, the short-circuit currents of 4.6mA and the light energy conversion efficiency of 4.5% under 100mW white light illumination.

The invention discloses a photovoltaic device and a solar battery comprising the photovoltaic device. The photovoltaic device comprises three regions including a transparent electrode region, a window region and an absorbing region, wherein at least one face of six faces of in-light faces and back faces of the three regions is provided with a low-dimensional composite interface structure formed by contacting nano wires or nano micro-ball points. The solar battery prepared by the photovoltaic device disclosed by the invention utilizes a bionic low-dimensional composite interface structure to collect sunlight and takes the nano wires or the nano micro-balls as surface plasmons, so as to further enhance light trapping effects. Meanwhile, controllable doping can be formed through controllable point contact and a potential field which can reduce a hole and electron compounding possibility and is good for transmitting holes or electrons is provided, so that the separating efficiency and the transportation capability of electron holes are improved and the efficient photovoltaic effect is realized; and through regulating and controlling a doping interface, energy band engineering is adjusted, the photovoltaic current and/or voltage is improved and the photovoltaic conversion capability is improved.

Methods and devices for increase power output from solar devices. In one embodiment, the technique enables the front hot solar panel surface to be cooled by attachment of a thermoelectric multilayer stack to the back solar panel surface. The thermoelectric stack cools the solar panel front surface by drawing heat from the front to the back of the panel. That heat is transformed into mechanical vibrations using an inverse Peltier effect and that mechanical energy then transformed into electrical energy using a piezoelectric effect. Power output is first increased by lower operating temperature on front, resulting in a higher power conversion efficiency for the photovoltaic effect taking place in the CIGS/CdS active layers or other thin films, then from an additional power output from secondary electrical energy created from mechanical arising from the temperature-gradient driven occurrence of the thermoelectric effect.

The invention provides a TFT (thin film transistor) array substrate, and a production method thereof and a display device. The TFT array substrate mainly comprises a substrate, a common electrode wire, a grid wire, an insulation buffering layer, an active layer, a grid electrode insulation layer, a grid lead, a source electrode, a grid electrode and a data wire wherein the common electrode wire and the grid wire are formed on the substrate and extend along a first direction; the insulation buffering layer is formed on the common electrode wire and the grid wire; the active layer is formed on the insulation buffering layer; and the grid electrode insulation layer is formed on the active layer, and the grid lead, the source electrode, the grid electrode and the data wire are formed on the grid electrode insulation layer. Since the common electrode wire is made of a nontransparent metal, and a ditch area is arranged right above the common electrode wire, the high-bright backlight can be efficiently shielded by the common electrode wire, so that the photovoltaic effect which is produced under the influence of the high-bright backlight in the ditch area can be avoided. Therefore, according to the scheme provided by the invention, alight shielding layer is not required to be specially arranged, so that one procedure is omitted, the metal material is reduced, and the productivity of the TFT array substrate can be effectively improved.

A photovoltaic element having two plane or curved plates (1) and (2), which are joined by a circumferential seal (3) at a spacing ranging from 2 to 20 mm, thus forming a cavity (4) in which there are enclosed a plurality of photovoltaic cells (5), each of which is attached to only one of the two plates (2) using an adhesive (6), at least this plate (2) being transparent, wherein both plates are made of plastic that is permeable to water vapor and the adhesive with which the photovoltaic cells are attached covers at most 30% of the area of the individual photovoltaic cells can be used for applications such as roofing and illuminating bus stops.

The invention relates to imparting photoreactivity to target cells, e.g., retinal cells, by introducing photoresponsive functional abiotic nanosystems (FANs), nanometer-scale semiconductor/metal or semiconductor/semiconductor hetero-junctions that in this case include a photovoltaic effect. The invention further provides methods of making and using FANs, where the hetero-junctions bear surface functionalization that localizes them in cell membranes. Illumination of these hetero-junctions incorporated in cell membranes generates photovoltages that depolarize the membranes, such as those of nerve cells, in which FANs photogenerate action potentials. Incorporating FANs into the cells of a retina with damaged photoreceptor cells reintroduces photoresponsiveness to the retina, so that light creates action potentials that the brain interprets as sight.

The invention relates to a high-power LED (light-emitting diode) chip packaging quality detecting method, and relates to a contact-type detecting method based on a PN junction photovoltaic effect. During the process of packaging a high-power LED chip, firstly, a uniform light field generated by a light source device (1) is irradiated vertically on light receiving surfaces of to-be-detected LEDs (3) and a standard LED (4) on a stand; secondly, photo-generated current signals generated on the PN junction are respectively guided into a signal sampling comparison circuit (6) by utilizing a pin fixture (5), and then the voltage values generated by each detected LED and the standard LED are compared and are subjected to difference value amplifying treatment; treated voltage difference values pass through a simulation switch (7), and are provided for a central control system (8) for analog-digital conversion and analysis, and the position of the LEDs with unqualified packaging quality is displayed on a display screen (9), and meanwhile an alarm is sent out. The method is used for eliminating errors generated by fixture contact resistors through introducing in the uniform light field and the standard LED and performing subtracting treatment for photo-generated signals, and guaranteeing the detection accuracy.

The invention provides a bulk effect solar cell material which comprise a metal electrode, BiFeO3 ferroelectrics and a LaNiO3/Si substrate, wherein the BiFeO3 ferroelectrics grows vertical to the direction of the LaNiO3/Si substrate. The invention also provides a preparation method of the bulk effect solar cell material. The method comprises the following steps of: with BiFeO3 as structural material, preparing pure phase BiFeO3 film by using a sol-gel method, spin-coating the obtained BiFeO3 film on the LaNiO3/Si substrate and carrying out stepped annealing at a high temperature, and finally sputtering electrodes to the BiFeO3 film. The BiFeO3 film disclosed by the invention has uniform and dense surface, good crystalline properties and no impurity phase, and can test photovoltaic effect by using a metal electrode-ferroelectric-buffer layer substrate sandwich structure. The test structure is simple and clear and larger open-circuit voltage can be obtained.

The invention discloses a real-time controllable microdrop arraying device and a method based on a lithium niobate sandwich structure chip. The device comprises a laser device 1, a diaphragm 2, a spatial filter 3, a first lens 4, a second lens 5, a mask 6, a beam splitter 7, a first CCD (Charge Coupled Device) camera 8, a computer 9, a background light source 10, the lithium niobate sandwich structure chip 11, a transparent microchip translation table 12, an objective lens 13, a semi-transparent and semi-reflective mirror 14, an optical filter 15 and a second CCD camera 16. The device consists of a microdrop arraying light path, a real-time observation light path and a light intensity detection light path; microdrop arraying is realized by utilizing a photovoltaic effect generated by irradiating the lithium niobate sandwich structure chip by laser; arrayed microdrops can be merged and transported; and a process can be observed in real time. A technology has an important application prospect in the fields of biological analysis and detection, chemical reaction, medicine research and development and the like.

The invention belongs to the technical fields of solar cells, perovskite materials and photovoltaic materials, and specifically discloses a functionalized perovskite material based on novel ionic liquid and application of the functionalized perovskite material in solar cell preparing. Novel hydrophobic ionic liquid 1-methyl-N-(3-aminopropyl)-imidazole sodium hexafluorophosphate (APMIHPF6) and a preparing method thereof are introduced, and based on the combination of the novel hydrophobic ionic liquid and lead halide, a perovskite structure is formed and spin-coats dense titanium dioxide transparent thin film as a photo-anode to construct a plane heterostructure perovskite solar cell; based on a photovoltaic effect, sunlight is simulated through a xenon lamp is used as an excitation light source to achieve work and performance detection of the perovskite solar cell. Through the combination of novel hydrophobic ionic liquid 1-methyl-N-(3-aminopropyl)-imidazole sodium hexafluorophosphate (APMIHPF6) and lead halide, the perovskite structure is introduced into a perovskite material system and the prepared perovskite cell has the advantages of being convenient, simple, economical, high in stability and photoelectric conversion efficiency and the like.

The invention discloses a solar energy thermoelectricity co-generation and co-supply system. The solar energy thermoelectricity co-generation and co-supply system is mainly composed of a water system and an electrical power system, which are relatively independent. The main component of the solar energy thermoelectricity co-generation and co-supply system is a solar energy thermoelectricity co-generation component. The structural materials of the component comprise a glass cover plate layer, an air insulation layer, a photovoltaic cell sheet, an EVA adhesive film, a metal absorber plate, a heat exchange tube liquid flow channel, an insulating layer and a packaging base plate from top to bottom. A silica gel spacer supports between the metal absorber plate and the glass cover plate to form the air insulation layer; a high-selectivity heat absorbing coating is sprayed on the metal absorber plate to improve the absorbing efficiency for sunlight. Under the shining of the sunlight, the outermost layer cell sheet uses a photovoltaic effect to transform light energy into electric energy and output to supply power to the outside; longitudinal heat exchange tubes in the metal absorber plate on the lower layer collect energy of the sunlight as solar energy heat collecting tubes and heat generated by the cell sheet heating and transforms the heat into heat of cycle fluid to output, therefore, the energy utilization efficiency is improved to the most extent, and the thermoelectricity co-generation is achieved.

A photovoltaic devices inspection apparatus and method of determining defects in photovoltaic devices that uses electroluminescence can find both the quality of the photovoltaic devices from the state of electroluminescence and the possibility of the photovoltaic devices becoming defective in the future by applying constant electric current to the photovoltaic devices causing electroluminescence of the photovoltaic devices (S7), photographing the light emitted from each photovoltaic cell of the photovoltaic devices (S10), dividing the photographed image of the photovoltaic cell into a bright region and dark region by using a threshold value and displayed as an enhanced image by binarization, analyzing as classifying each photovoltaic cell defect according to defect types and comparing a shape of the dark region with the defect types (S50), determining the existence of the defect to perform a positive-negative quality judgment on the photovoltaic devices, and displaying images of the problematic regions for visual inspection (S16).

A visible light transmitting structure with photovoltaic effect comprises a transparent substrate and a PN junction layer having a P type semiconductor and an N type semiconductor, which is formed on the substrate. The visible light transmitting structure with photovoltaic effect may be used as a windowpane of a house or a business place for shutting out harmful ultraviolet rays by passing visible light through the windowpane.

A method and apparatus for improving efficiency of photovoltaic cells by improving light capture between the photoelectric unit and back reflector is provided. A transition layer is formed at the interface between the photoelectric unit and transmitting conducting layer of the back reflector by adding oxygen, nitrogen, or both to the surface of the photoelectric unit or the interface between the photoelectric unit and the transmitting conducting layer. The transition layer may comprise silicon, oxygen, or nitrogen, and may be silicon oxide, silicon nitride, metal oxide with excess oxygen, metal oxide with nitrogen, or any combination thereof, including bilayers and multi-layers. The sputtering process for forming the transmitting conducting layer may feature at least one of nitrogen and excess oxygen, and may be performed by sputtering at low power, followed by an operation to form the rest of the transmitting conductive layer.

The invention relates to a method for preparing a direct current (DC) magnetron sputtering AZO/SiO2/p-SiSIS heterojunction photoelectric device, and belongs to the technical field of methods for preparing silicon-based heterojunction photoelectric devices. By growth of an ultrathin SiO2 layer through low-temperature thermal oxidation, DC magnetron sputtering of an AZO emitter, antireflection and collection of an electrode film, a novel AZO/SiO2/p-SiSIS ultraviolet-visible-near-infrared broad-spectrum heterojunction photoelectric device is successfully prepared. An I/V curve of the prepared AZO/SiO2/p-SiSIS heterojunction has good rectification characterisitic and very low reverse dark current, so a good heterojunction diode is formed between AZO and p-Si. Under the condition of AM 1.5 illumination, the open-circuit voltage VOC is 230mV, the photoelectric conversion efficiency eta is 0.025 percent, and the photovoltaic effect is obvious. By combining different characteristics of a wide band gap of the AZO and a relatively narrow band gap of a Si material for mutual complementation, the SIS heterojunction can be developed into a low-cost solar cell, and also can become an excellent-performance ultraviolet-visible-near-infrared enhanced broad-spectrum photoelectric detector.

The invention relates to a direct-current bus photoelectric real-time confluence system and a control method, and belongs to the field of distributed photovoltaic direct-current micro-grid power sources. The direct-current bus photoelectric real-time confluence system comprises a direct-current input source which is connected with a one-way rectification controller, and the output end of the one-way rectification controller is connected with a bus capacitor bank. The input end of the bus capacitor bank is connected with a DC/DC converter which is used for achieving adjustment of output power of a photovoltaic cell panel. Two ends of the bus capacitor bank are connected with a discharging circuit in parallel, and meanwhile the output end of the bus capacitor bank is connected with a direct-current load. By means of multilevel hysteresis control of the voltage of the bus capacitor bank, the working mode of the system is confirmed, therefore, direct-current stabilized-voltage output is achieved, and normal power supply of the load is guaranteed. On the premise that stabilization of the output voltage is guaranteed, the photovoltaic cell panel is used as auxiliary energy, real-time confluence of photovoltaic energy and the direct-current input source is achieved, the energy utilization rate is improved, power generation cost is lowered, environmental pollution is reduced, and good universality and practical value are obtained.

The invention discloses a ferroelectric photovoltaic device which comprises an upper electrode, a lower metal electrode and a ferroelectric material between the two electrodes. The ferroelectric material is lead lanthanum zirconate titanate (PLZT), lead zirconate titanate (PZT), barium titanate (BTO) or bismuth ferrite oxide (BFO), etc., the upper electrode is made of a transparent electrode material such as indium tin oxide (ITO) or aluminum doped zinc oxide (AZO), and the lower metal electrode is made of the metal with a low work unction such as Ag, Al or Mg. The invention also discloses a preparation method of the ferroelectric photovoltaic device. According to the invention, the photovoltaic characteristic of this kind of ferroelectric photovoltaic device can be improved through material design and energy band engineering based on the photoelectric effect of the metal with the low work function and the photovoltaic effect of the ferroelectric material; the light response wavelength of the traditional broad-band gap ferroelectric photovoltaic device can be extended from the range of ultraviolet light to the range of visible light; and the application field of the ferroelectric photovoltaic device can be enlarged.

The invention provides a household portable solar photovoltaic power, which consists of a solar photovoltaic cell module with low power (about 10 WP), a small-sized lead-acid maintenance-free battery (10-17 AH), and a solar charge and discharge controller, with an accessory of LED lighting lamp allocated with corresponding power; by the photovoltaic effect of the solar photovoltaic cell module, the portable solar photovoltaic power converts the solar energy into direct-current electric energy, stores the electric energy in the battery through the drive circuit of the charge and discharge controller, and outputs direct current electric energy to the load through the discharge control drive circuit. The miniaturized solar photovoltaic power has simple structure, and is convenient in movement and applicable to the power utilization for base lighting in remote villages, grazing districts, islands and border posts where the public power grid is difficult to be applied.

The invention belongs to the technical field of material preparation and sensors, in particular to an inorganic-organic semiconductor combined element having a transverse photovoltaic effect and a preparation method thereof. The element is prepared by depositing a magnetic metal material and an organic semiconductor material on an inorganic semiconductor substrate by means of coevaporation. The nano particles of the magnetic metal material are embedded in an organic semiconductor base and a composite nanoparticle membrane layer formed is expressed by a formula: (A)*(B)1-x, wherein x ranges from 0.3 to 0.9; A represents the magnetic metal material and B represents the organic semiconductor material; and the element structure is expressed as (A)*(B)1-x/ Si or (A)*(B)1-x/SiO2/Si. The element can be widely used elements such as position sensors.

A pixel driving circuit provided by the invention comprises: a light emitting device which is connected in series with a light emitting loop formed by a first power supply signal and a second power supply signal; a driving transistor which is connected to the light emitting loop in series and used for controlling the current flowing through the light emitting loop; a first reset transistor, wherein the grid electrode of the first reset transistor is connected with a first scanning signal, wherein the source electrode is connected with a first reset signal, and the drain electrode is electrically connected with the grid electrode of the driving transistor; and a clamping transistor, wherein the grid electrode of the clamping transistor is connected with a second scanning signal, wherein thesource electrode of the clamping transistor is electrically connected with the drain electrode of the driving transistor, the drain electrode of the clamping transistor is electrically connected withthe grid electrode of the driving transistor, and the first reset transistor and/or the clamping transistor are/is a double-gate transistor. According to the OLED pixel driving circuit, the first reset transistor and/or the clamping transistor adopt/adopts the double-gate transistor, so that the increase of the leakage current of the transistor due to a photovoltaic effect can be avoided, the leakage current of the transistor can be effectively reduced, and the OLED display panel has a more stable display effect.