58 results about "Photovoltaic effect" patented technology

The invention belongs to the technical field of photoelectric detection, and particularly relates to a micro-nano particle characterization system and characterization method based on an alternating current photovoltaic effect. The two technical problems in the aspects of sensitivity and measurement precision of the existing photoelectric detection technology are solved; the sensitivity of the photoelectric detector is remarkably improved; the sensitivity bottleneck of the traditional technology is broken through; the interference of continuous laser irradiation on the micro-nano particles is effectively reduced, and the measurement precision is improved. The technical breakthroughs not only widen the application range of the photoelectric detection technology, but also provide more accurate and reliable technical means for micro-nano particle characterization, and have important scientific significance and application value.

The invention discloses a black silicon broadband photoelectric detector based on alternating current photovoltaic effect optimization. The device comprises an alternating-current photovoltaic effect unit, a core light absorption layer, a heterostructure building layer, a top electrode and a bottom electrode, the alternating-current photovoltaic effect unit is used for generating a periodic flash field, irradiating the periodic flash field on the surface state of the heterogeneous pn junction to capture or release transient charges, and collecting the transient charges to perform ultra-high-sensitivity optical detection; the core light absorption layer is made of a black silicon material and is used for improving light absorption through a surface micro-nano structure, widening the light absorption range and providing a surface state as an active site for capturing or releasing transient charges in an alternating current photovoltaic effect; the heterostructure layer and the core light absorption layer form a heterogeneous pn junction so as to construct a built-in electric field to promote generation, separation, migration and recombination of carriers. According to the invention, the characteristics of wide spectral response, ultrahigh sensitivity, low dark current and zero-bias working can be realized, high-precision detection can be carried out under weak light, and the development of high-precision technology is facilitated.

An integrated configurable photodetector with an ultra-high circular polarization extinction ratio and a preparation method therefor are provided. The photodetector includes a metal reflective layer, a dielectric layer, an electrode layer, and a two-dimensional material layer. The electrode layer includes symmetrically arranged Z-shaped metallic optical antenna arrays which are respectively integrated with a source electrode and a drain electrode and have opposite chirality. The photodetector operates at zero bias state, and a photo-response is photovoltaic effect, hot electron injection, photo-thermoelectric effect and so on induced by a Schottky junction composed of the source electrode, the drain electrode and the two-dimensional material. By adjusting the distribution of the incident light in the source and drain electrode regions, under specific Circularly polarized light, photocurrents of equal magnitude but opposite directions cancel each other out, resulting in a net output of zero and significantly reducing noise.

A LiGa-based 0.5 In 0.5 A self-driven X-ray detector based on Se2 crystal and its fabrication method. This detector employs an MSM device structure with c-plane LiGa... 0.5 In 0.5 Using Se2 wafers as semiconductor materials and metal materials as electrodes, self-driven X-ray detection can be achieved under zero bias voltage; the above-mentioned self-driven X-ray detector fabrication method includes the following steps: (1) fabricating LiGa 0.5 In 0.5 (1) Se2 crystal; (2) Directional processing of c-plane LiGa 0.5 In 0.5 Se2 wafer; (3) LiGa 0.5 In 0.5 The upper and lower surfaces of the Se2 wafer are polished and passivated; (4) in LiGa 0.5 In 0.5 Metal electrodes are deposited on the upper and lower surfaces of a Se2 wafer. This invention utilizes LiGa... 0.5 In 0.5 The bulk photovoltaic effect generated by the non-centrosymmetric structure of Se2 enabled the fabrication of a self-driven X-ray detector with a simple structure. Furthermore, due to the LiGa... 0.5 In 0.5 Se2 crystals have high resistivity, and the devices fabricated from them have low dark current, enabling highly sensitive X-ray detection.

1. Name of the design product: Solar photovoltaic tile (BC three-curved type). 2. Use of the design product: This design product is used as a photovoltaic tile for building roofs and can generate electricity through photovoltaic effect. 3. Design key points of the design product: Lies in the shape. 4. Picture or photo that best shows the design key points: Perspective view. 5. Other circumstances that need to be explained: Other explanations: The submitted views have clearly shown the design product of this design, and the left view, right view, top view and bottom view are omitted.

A near-infrared radiation detector comprises: a substrate comprising a semiconductor; a substrate electrode formed in contact with the substrate; an active layer formed over the substrate, the active layer comprising a ferroelectric material; and an active layer electrode formed in contact with the active layer and substantially transparent to near-infrared radiation. The detector is operable without applied external bias so that, when near-infrared radiation is incident on the detector, charge carriers are generated by a photovoltaic effect in the substrate / active layer heterojunction and a temperature gradient is generated in the active layer, providing a pyro-phototronic current signal indicative of the near-infrared radiation incident on the detector. Also disclosed is a corresponding method of detecting near-infrared radiation.

This application relates to the field of vest technology, disclosing a reflective warning vest, including a vest, an arc-shaped magnetic plate, a magnetic base, a warning light, a magnetic plate, a photovoltaic panel, a storage battery, and a control box. In use, in dimly lit environments at night, the warning light can be activated via the control box to serve as a warning, making it easily observable and alerting others to avoid the area. During this time, the storage battery continuously consumes its charge. In well-lit environments during the day, the photovoltaic panel utilizes the photovoltaic effect at the semiconductor interface to directly convert solar energy into electrical energy, which is then stored in the storage battery to charge it. This compensates for the nighttime power consumption and enables automatic battery charging. Therefore, there is no need to repeatedly remove and recharge the battery, saving time and effort and offering the advantage of ease of use.

A method for manufacturing a solar panel having a solar cell and integrated circuits on the same silicon wafer is disclosed. The solar panel include two groups of semiconductor wafers. Each of the first group of semiconductor wafers includes a solar cell for generating direct current via the photovoltaic effect. Each of the second group of semiconductor wafers includes a solar cell for generating direct current via the photovoltaic effect, and some integrated circuits arranged to perform computations. The integrated circuits are solely powered by the solar cell from the second group and other solar cells from the group of semiconductor wafers.

A linear photovoltaic cell module, comprising: a first inner electrode, which is a linear conductor; a first functional photosensitive layer, which covers the first inner electrode; a second inner electrode, which is a linear conductor; and a second functional photosensitive layer, which covers the second inner electrode, wherein the first functional photosensitive layer and the second functional photosensitive layer are arranged in parallel or in a twisted mode and are electrically connected, and the first functional photosensitive layer and the second functional photosensitive layer have a photovoltaic effect, and the generated output voltages have opposite polarities. In the present invention, positive and negative charges of one end of batteries having two different polarities are recombined by means of an outer electrode and a connecting electrode, and the other ends of the batteries are led out to an outer circuit from respective inner electrodes. The linear photovoltaic cell module has the advantages of a small resistance, low electric-energy loss, simple connection, firmness, etc.

The application discloses a lutetium manganate-based near-infrared light detection film, a preparation method and application thereof, and has a molecular formula of Lu (0.98‑x) Er 0.02 Yb x MnO3, wherein x is 0.04-0.10. The application is prepared by rare earth elements Er and Yb co-doping for regulation, and a Lu (0.98‑x) Er 0.02 Yb x MnO3 base film colloid, when x is 0.04-0.10, the optical absorption range is widened and the band gap is reduced, and due to efficient energy transmission between Er 3+ , Yb 3+ , efficient pumping of Er 3+ is realized, thereby enhancing the photovoltaic effect of the LMO film, greatly improving the photoelectric current density, and improving the responsivity and the detection rate by several times under 850 nm near-infrared wavelength. The up-conversion strategy based on multiple rare earth elements co-doping has positive multiple positive effects on the light detection performance, and promotes the development of the ferroelectric series in the field of light detection. Meanwhile, the material is expected to become a new generation of environment-friendly lead-free ferroelectric film material.

The invention relates to the field of photovoltaic power generation, and aims to provide a method for calculating open-circuit voltage and short-circuit current of a photovoltaic cell. Comprising the following steps: enabling a photovoltaic cell to work at any two different set steady-state working points by changing the impedance of a power electronic converter, and respectively applying trace disturbance to form new steady-state working points; the port voltage and current values of the photovoltaic cell are sampled for the four steady-state working points, and the reverse saturation current, the open-circuit voltage and the short-circuit current of the photovoltaic cell are obtained through solving based on the photovoltaic effect basic equation and the voltage and current differential relation when the photovoltaic cell is at the steady-state working points. According to the invention, the power electronic converter is prevented from being regulated under the extreme conditions of open-circuit voltage or short-circuit current and the like, interference on the operation stability of the converter is avoided, power generation power loss is avoided, and system safety and power generation benefits are improved; the calculation process can be simplified, hardware equipment does not need to be additionally added or upgraded, and the system cost can be greatly reduced.

The application discloses a self-powered artificial optical electric synapse with selective detection function and a preparation method thereof, and sequentially grows a polymer dielectric layer and two different ultrathin semiconductor light response layers on a SiO2 / Si substrate, wherein the upper ultrathin semiconductor light response functional layer is semi-covered on the lower ultrathin semiconductor light response layer to form an asymmetric heterojunction, then gold films are transferred to the lower and upper semiconductor light response functional layers as source and drain electrodes by using a non-invasive gold film transfer process, and the preparation of the self-powered artificial optical electric synapse with selective detection function is completed. The self-powered optical electric synapse with selective detection function can selectively detect and process ultraviolet light without any voltage by coupling photovoltaic effect and interface charge capture behavior, and has the ability of wide spectrum detection under the condition of applying voltage, and can simulate the perception and signal processing function of the retina.

The invention discloses a photoelectric logic gate and a multi-mode communication system based on a bidirectional photovoltaic effect, a WSe2 / alpha-MoO3 heterojunction structure is adopted, the photoelectric logic gate comprises a Si / SiO2 substrate, an alpha-MoO3 charge trapping layer and a WSe2 bipolar channel layer, the transfer direction of charges on a heterogeneous interface is controlled through the polarity of gate voltage (Vg), a built-in electric field with a reversible direction is formed in a WSe2 channel, and the bidirectional photovoltaic effect is achieved. And positive / negative polarity photovoltaic response switching of the same light source is realized. Various reconfigurable logic gates such as AND / NAND / XNOR / NOT can be realized by configuring different input / control signals (laser, bias voltage and grid voltage); the grid voltage input, the bias voltage input and the illumination input are cooperatively regulated and controlled, the output current is in four distinguishable states, and multi-mode photoelectric communication is achieved. The single device integrates multiple logic functions, breaks through the limitation of singleness of traditional photoelectric response, and is suitable for a high-density optical calculation and communication system.

The application discloses a dual-color detector with bipolar response, a preparation method and application thereof. The detector comprises a first light absorption layer capable of absorbing light in a first wavelength domain and forming photo-generated carriers based on a photovoltaic effect; a second light absorption layer capable of absorbing light in a second wavelength domain and forming photo-generated carriers based on a photothermoelectric effect, the second light absorption layer cooperating with the first light absorption layer to form a pn heterojunction; a first electrode in electrical contact with the first light absorption layer, and the first electrode being spaced apart from the second light absorption layer; and a second electrode in electrical contact with the second light absorption layer. The dual-color detector has the advantages of high integration, bipolar response, low energy consumption, simple operation, high accuracy, and great significance for simplifying the design of an optical communication system and realizing an efficient signal modulation scheme.

The application relates to the technical field of silicon nano array, and proposes a permeation passivation method for a silicon nano array, which comprises the following steps: dropping a passivation solution onto the surface of the silicon nano array, standing until permeation, and completing passivation. Through the technical scheme, 1) the passivation problem of the silicon nano array is solved, the silicon nano array prepared through physical etching and chemical etching is effectively and high-quality passivated, large-scale vacuum equipment required by an existing passivation scheme is eliminated, the process is simplified, the cost is reduced, and the safety is improved; 2) the silicon nano array is permeation passivated, so that the silicon nano array simultaneously has low reflection loss and low recombination loss functions, meets two necessary conditions of inverse Auger abnormal photovoltaic effect (that is, one photon generates two pairs of electron-hole pairs), the external quantum efficiency is greater than 100%, the SQ theoretical limit of the single-crystal silicon cell efficiency can be broken through, and higher cell photoelectric conversion efficiency can be obtained.

The present invention discloses a copper-zinc-tin nitride Schottky junction and a preparation method thereof, wherein the method comprises the following steps: in a flowing nitrogen and argon atmosphere, depositing a zinc-tin alloy target with a Zn:Sn ratio of 5:1 on a substrate by radio frequency sputtering, thereby obtaining a zinc-tin nitride thin film. In a flowing argon atmosphere, the zinc-tin nitride thin film is annealed at 300 to 400°C, thereby obtaining an annealed zinc-tin nitride thin film. In a flowing argon atmosphere, depositing a copper target on the annealed zinc-tin nitride thin film by direct current sputtering, thereby obtaining a copper-zinc-tin nitride Schottky junction. The present invention solves the problem that the copper-zinc-tin nitride Schottky junction prepared by the existing method has poor rectification effect and no photovoltaic effect.

The invention relates to the technical field of double-sided photovoltaic modules, and discloses a double-sided photovoltaic module and a laminated structure thereof, and the double-sided photovoltaic module comprises a stable support, a positioning block which is fixedly installed at the bottom of the stable support, a photovoltaic panel which is arranged at the top of the stable support, and a photovoltaic module which is arranged at the side position of the stable support. The photovoltaic module comprises a stabilizing mechanism arranged on the side of the stabilizing support, the photovoltaic panel comprises a photovoltaic mechanism, the photovoltaic mechanism is located above the stabilizing mechanism, the photovoltaic mechanism is arranged on the inner wall of the photovoltaic panel, and a cooling mechanism is arranged on the inner wall of the photovoltaic panel. The problems that an existing photovoltaic module has certain limitation, a traditional single-face photovoltaic module can only utilize illumination of the front face, the back face can not effectively utilize light energy, consequently, the overall power generation efficiency is limited, under some complex illumination conditions, the photovoltaic effect can not be fully exerted, and the light energy absorption and conversion efficiency of the front face and the back face can not be well balanced are solved.

Flexible composite film ferroelectric memory and sensor under flexoelectric photovoltaic effect. The application relates to the application of a flexoelectric photovoltaic device in a ferroelectric memory, in particular to a flexible composite film with flexoelectric photovoltaic effect and the application in a memory and a sensor. The flexible composite film comprises an organic support film, at least one group of inorganic nanometer arrays is inlaid in the organic support film, and the inorganic nanometer arrays have a flexoelectric effect; any of the inorganic nanometer arrays comprises a plurality of inorganic nanometer tubes or inorganic nanometer fibers arranged in a direction, and the length direction of the inorganic nanometer tubes or inorganic nanometer fibers is less than 30 degrees with the thickness direction of the organic support film. The flexible composite film has the characteristics of high flexoelectric coefficient, large photovoltaic current, good flexibility and no easy failure after repeated bending.

The application provides a luminescent metal organic framework material for a radiophotovoltaic effect nuclear battery and a preparation method thereof, the material has a chemical general formula of M-TCPE, wherein M is Zr or Hf, and TCPE is 4,4',4'',4'''-(ethylene-1,1,2,2-tetrayl) tetrakisbenzoic acid. The material is prepared by using a step-by-step pre-assembly-gradient crystallization solvothermal method, M-TCPE is obtained by controlling a pre-assembly temperature of 363 K and a crystallization temperature of 393 K, the material firstly expands the 'anti-heavy atom effect' to the MOF system, and the radiophotoluminescence intensity of Hf-TCPE is increased by 14.6% compared with that of Zr-TCPE. M-TCPE is compounded with PDMS to prepare a flexible fluorescent film, and the flexible fluorescent film is directly attached to a photovoltaic module to form a radiophotovoltaic effect nuclear battery, wherein the maximum output power of the nuclear battery based on Hf-TCPE reaches 1.37 muW, and is increased by 18.1% compared with that of a Zr-based nuclear battery.

The present invention relates to a two-dimensional photovoltaic detector with switchable working modes, as well as a preparation method and application thereof. The detector comprises a two-dimensional material layer located on a gate, a source electrode and a drain electrode arranged at both ends of the two-dimensional material layer, and an ohmic contact between the drain electrode and the two-dimensional material layer; a Schottky junction is formed between the source electrode and the two-dimensional material layer; on the other hand, an insulating isolation material layer extends along the surface of the source electrode to cover part of the surface of the two-dimensional material layer, and an ohmic contact is formed between the source electrode and the two-dimensional material layer, and a lateral PN homojunction is formed between the portion of the two-dimensional material layer not covered by the insulating isolation material layer and the portion covered by the insulating isolation material layer; by applying different voltages between the source electrode and the drain electrode, the working mode of the detector is switched between a photodiode and a photoconductor; under the condition that a certain voltage is applied to the gate, the detector exhibits a photovoltaic effect and a rectifying behavior.

The invention discloses a vertical tungsten diselenide PIN self-powered photovoltaic detector and a preparation method thereof. According to the invention, niobium-doped tungsten diselenide is used as a degenerate P-type doped layer, original tungsten diselenide is used as an I-type layer, argon plasma-doped tungsten diselenide is used as a degenerate N-type doped layer, and the tungsten diselenide vertical PIN self-powered photovoltaic detector is constructed. Self-powered detection of the device is realized by utilizing a photovoltaic effect generated by a PN junction formed between the doping layers, a built-in electric field is improved by utilizing degenerate doping and a vertical structure, and carrier drift and separation are accelerated. The response speed is improved by increasing the thickness of the original tungsten diselenide layer, the responsivity is improved by reducing the thickness of the niobium-doped tungsten diselenide layer, and high-performance self-powered photovoltaic detection is achieved.

The present disclosure relates to the field of photoelectric detection technology, and specifically relates to a micro-nano particle characterization system and characterization method based on AC photovoltaic effect. The present disclosure solves two major technical problems in the sensitivity and measurement accuracy of the existing photoelectric detection technology by innovatively introducing the AC photovoltaic effect. It significantly improves the sensitivity of the photoelectric detector, breaks through the sensitivity bottleneck of traditional technology; it effectively reduces the interference of continuous laser irradiation on micro-nano particles, and improves the measurement accuracy. These technical breakthroughs not only broaden the application scope of photoelectric detection technology, but also provide more accurate and reliable technical means for the characterization of micro-nano particles, which has important scientific significance and application value.

The invention relates to the technical field of optoelectronic devices, and discloses a purple phosphorus photovoltaic effect photoelectric detector and a preparation method thereof.The purple phosphorus photovoltaic effect photoelectric detector comprises a substrate, a purple phosphorus active layer and two electrodes, the purple phosphorus active layer is arranged on the top face of the substrate, and the two electrodes are in ohmic contact with the purple phosphorus active layer respectively; the purple phosphorus active layer absorbs incident light and generates photon-generated carriers through a bulk photovoltaic effect, and the photon-generated carriers are directionally separated under the action of an internal electric field of the purple phosphorus active layer and are respectively collected by the two electrodes. Purple phosphorus is selected as a photosensitive material, the photovoltaic effect of the purple phosphorus is used as a core mechanism of photoelectric conversion, self-driven work of the photoelectric detector is achieved, dependence on an external power source is eliminated, the detection signal-to-noise ratio and practicability are improved, and the photoelectric detector can accurately distinguish the polarization state of light and also can accurately distinguish the polarization state of light. And an electric signal which is strong enough can be generated for high-sensitivity detection.

The utility model relates to a solar water and electricity co-production device based on solar photo-thermal and photoelectric effects. The device comprises a glass cover plate (1), an inner-layer water tank (2), a lithium battery box (3), a serial port screen (4), a carbon-based photo-thermal conversion film (5), a solar panel (6), a heat dissipation block (7), a thermoelectric power generation sheet (8) and a rectangular heat absorption block (9). Wherein the glass cover plate (1) is arranged at the top of the glass box body, the carbon-based photo-thermal conversion film (5) and the inner-layer water tank (2) are arranged at the bottom of the glass box body, the solar panels (6) are symmetrically arranged on the outer side faces of the glass box body, the heat dissipation block (7) is further arranged outside the glass box body, and the heat dissipation block (7) is connected with the thermoelectric power generation piece (8). The thermoelectric power generation sheet (8) is connected with the rectangular heat absorption block (9), and the lithium battery box (3) and the serial port screen (4) are arranged adjacently.

The invention relates to the technical field of isotope batteries and discloses a radiation photovoltaic and radiation photovoltaic dual-effect isotope battery and a preparation method thereof. The radiation photovoltaic and radiation photovoltaic dual-effect isotope battery comprises at least one radiation photovoltaic / radiation photovoltaic light-emitting unit and at least one radiation photovoltaic transduction layer; the radiation photovoltaic / radiation photovoltaic light-emitting unit comprises a radioactive source layer which is provided with a first face and a second face which are oppositely arranged in the thickness direction of the radioactive source layer. The first surface and the second surface are respectively provided with a fluorescent layer; the radiation photovoltaic transduction layer is arranged on the first surface with the fluorescent layer or the second surface with the fluorescent layer, and the radiation photovoltaic transduction layer can be in contact with the fluorescent layer arranged on the first surface or the fluorescent layer arranged on the second surface. The isotope battery with the radiation photovoltaic and radiation photovoltaic dual effects can overcome the problems of low utilization rate and low output power of a radioactive source, and the utilization rate of the radioactive source and the output power can be improved by stacking and combining the radiation photovoltaic / radiation photovoltaic light-emitting unit and the radiation photovoltaic transduction layer.

The angle-adjustable solar lamp comprises a photovoltaic main board and a light source module, a main support is installed on the surface of the bottom end of the photovoltaic main board, side supports are installed on the two sides of the main support, side photovoltaic panels are installed on the surfaces of the top ends of the side supports, and a battery bin is installed on the surface of the bottom end of the main support; the light source module, the L-shaped mounting plate, the spring steel ball inner core, the limiting sleeve, the limiting round hole and the damping rotating shaft are arranged in a matched mode, the inclination angle of the light source module can be adjusted according to requirements through the elastic compensation piece, the illumination range of the light source module is enlarged, angle adjustment is more flexible, the overall area of the photovoltaic panel is increased through the arrangement of the side support and the side photovoltaic panel, and the overall photovoltaic effect is improved. The overall charging efficiency of the photovoltaic panel is improved, the light source module and the battery bin are installed in various modes and suitable for various scenes, the practicability of the lamp is improved, the light source module, the photovoltaic main board and the battery bin are perfectly combined, the integrated structural design is achieved, high integration is achieved, installation is easy, and the labor cost and the transportation cost are reduced.

The utility model discloses a solar sunscreen car cover which comprises a cover body provided with a plurality of solar panels, every two adjacent solar panels are connected in a relatively rotating mode and have an unfolded state and a folded state, and semiconductor crystal layers generating power through the photovoltaic effect are arranged on the two opposite faces of each solar panel. Power is generated in a folded state and an unfolded state; and the power supply assembly comprises a power supply box and a battery, the battery is detachably arranged in the power supply box, the power supply box is provided with an electrode electrically connected with the battery, and the power supply box is electrically connected with the solar panel. The problems that a battery of an automobile cover cannot be detached and replaced, and the automobile cover cannot generate electricity in a folded state are solved.

The utility model relates to the technical field of protective shells, and provides a solar magnetic wireless charging protective shell which comprises a shell body and further comprises a clamping groove formed in one side of the shell body, and a magnetic wireless charging plate is clamped in the clamping groove. According to the utility model, the solar photovoltaic panel is unfolded, the solar photovoltaic panel converts solar radiation into electric energy through a photovoltaic effect, the solar photovoltaic panel is connected with the control circuit board and transmits the electric energy to the circuit board, and the magnetic attraction wireless charging plate is composed of a wireless charging module, an electromagnetic induction coil and a magnetic attraction disc. A wireless receiving module of the magnetic wireless charging plate is connected with the control circuit board, receives stabilized 5V current from the control circuit board, and charges a mobile phone through an electromagnetic induction coil, so that when a user is outdoors and the mobile phone is about to be out of power, the mobile phone can be wirelessly charged by utilizing solar energy; therefore, the problem of mobile phone endurance when a user encounters an emergency outdoors is solved.

The present invention belongs to the technical field of photoelectric detection, and specifically relates to a micro-nano particle characterization system and method based on an alternating-current photovoltaic effect. The characterization system comprises: a scintillating light source module, which is used for generating intermittent optical signals, wherein the generated intermittent optical signals are directed into a particle solution to be characterized, so as to generate scattered light; a photoelectric detection module, which comprises a photoelectric detector, and is used for receiving the scattered light and generating an alternating-current photoelectric signal, wherein the photoelectric detector comprises a semiconductor substrate and an ultra-thin material located on the surface of the semiconductor substrate, and the ultra-thin material is an oxide semiconductor, a nitride semiconductor or an organic material semiconductor; and a signal processing module, which is used for analyzing the alternating-current photoelectric signal and outputting physical parameters of micro-nano particles. In the present invention, intermittent optical signals are used as incident light, so that the interference of existing continuous laser irradiation on micro-nano particles is effectively reduced; and a photoelectric detector based on an alternating-current photovoltaic effect is used, so that the two major technical problems of the sensitivity being insufficient and the measurement accuracy being insufficient in existing photoelectric detection technology are solved.

The invention discloses a circularly polarized light detection method based on an achiral medium micro-nano structure and a photoelectric detector. As an antisymmetric mode and a symmetric mode excited by x polarized light and y polarized light in the micro-nano structure interfere with each other, light intensities of near-field modes excited by left-handed light and right-handed light can be respectively concentrated on two sides of the micro-nano structure. The electrodes are arranged on the two sides of the micro-nano structure, and a chiral dependent near-field mode can be converted into photoelectric signals in different directions by utilizing photoelectric mechanisms such as a photo-thermoelectric effect or a photovoltaic effect, so that circularly polarized light photoelectric detection is realized. The circularly polarized light detection method and the photoelectric detector are high in chiral resolution capability, large in working bandwidth, free of light intensity calibration and independent of specific materials, structures or photoelectric response mechanisms, and can be popularized to photoelectric detectors based on different materials or mechanisms.