105 results about "Photovoltaic effect" patented technology

A photovoltaic, PV, apparatus for the conversion of light into electrical energy is described. The PV apparatus has a surface to receive incident light, one or more PV elements in or at the surface, the PV element to convert light incident on the surface into electrical energy by the photovoltaic effect, and one or more reconfigurable intelligent surface, RIS, elements in or at the surface, the RIS element operating as reconfigurable intelligent surface, RIS, to direct or reflect one or more incident electromagnetic, EM, waves or one or more incident EM beams incident on the surface from an incident first direction into one or more outgoing EM waves or one or more outgoing EM beams propagating along at least one second direction.

The invention relates to an energy-calculation integrated optical calculation chip element based on a photovoltaic effect and a preparation method and application thereof, and relates to the technical field of optical calculation and photovoltaics. The component comprises a substrate layer, a conductive electrode, a conductive contact piece, a flexural photovoltaic layer and a photoinduced strain layer, light energy entering the flexural photovoltaic layer is converted into electric energy due to the photovoltaic effect, and the photoinduced strain layer in physical contact with the flexural photovoltaic layer is irradiated by a special light beam to generate strain. The strain of the photoinduced strain layer enables the flexural photovoltaic layer in contact with the photoinduced strain layer to generate local strain regulated and controlled by a light beam, and photocurrent generated by the flexural photovoltaic layer due to a photovoltaic effect is subjected to strain regulation and control due to local strain gradient of a material. Compared with the prior art, the element integrates a photovoltaic effect and an optical calculation function, can simultaneously realize conversion from optical energy to electric energy and electric signal output of an optical calculation result through a single element, is a new generation of energy-calculation integrated optical calculation element, and can be used as a core calculation element of a green low-carbon chip.

The invention belongs to the technical field of photoelectric detection, and particularly relates to a micro-nano particle characterization system and characterization method based on an alternating current photovoltaic effect. The two technical problems in the aspects of sensitivity and measurement precision of the existing photoelectric detection technology are solved; the sensitivity of the photoelectric detector is remarkably improved; the sensitivity bottleneck of the traditional technology is broken through; the interference of continuous laser irradiation on the micro-nano particles is effectively reduced, and the measurement precision is improved. The technical breakthroughs not only widen the application range of the photoelectric detection technology, but also provide more accurate and reliable technical means for micro-nano particle characterization, and have important scientific significance and application value.

The invention discloses a black silicon broadband photoelectric detector based on alternating current photovoltaic effect optimization. The device comprises an alternating-current photovoltaic effect unit, a core light absorption layer, a heterostructure building layer, a top electrode and a bottom electrode, the alternating-current photovoltaic effect unit is used for generating a periodic flash field, irradiating the periodic flash field on the surface state of the heterogeneous pn junction to capture or release transient charges, and collecting the transient charges to perform ultra-high-sensitivity optical detection; the core light absorption layer is made of a black silicon material and is used for improving light absorption through a surface micro-nano structure, widening the light absorption range and providing a surface state as an active site for capturing or releasing transient charges in an alternating current photovoltaic effect; the heterostructure layer and the core light absorption layer form a heterogeneous pn junction so as to construct a built-in electric field to promote generation, separation, migration and recombination of carriers. According to the invention, the characteristics of wide spectral response, ultrahigh sensitivity, low dark current and zero-bias working can be realized, high-precision detection can be carried out under weak light, and the development of high-precision technology is facilitated.

An integrated configurable photodetector with an ultra-high circular polarization extinction ratio and a preparation method therefor are provided. The photodetector includes a metal reflective layer, a dielectric layer, an electrode layer, and a two-dimensional material layer. The electrode layer includes symmetrically arranged Z-shaped metallic optical antenna arrays which are respectively integrated with a source electrode and a drain electrode and have opposite chirality. The photodetector operates at zero bias state, and a photo-response is photovoltaic effect, hot electron injection, photo-thermoelectric effect and so on induced by a Schottky junction composed of the source electrode, the drain electrode and the two-dimensional material. By adjusting the distribution of the incident light in the source and drain electrode regions, under specific Circularly polarized light, photocurrents of equal magnitude but opposite directions cancel each other out, resulting in a net output of zero and significantly reducing noise.

The invention discloses a BIPV (building integrated photovoltaics) data processing system for a photovoltaic zero-carbon lighthouse factory, particularly relates to the technical field of photovoltaic effects, and comprises a photovoltaic module information input module, a monitoring area division module, a photovoltaic integrated data acquisition module, a photovoltaic integrated data analysis module, a comprehensive data processing module, a comprehensive data judgment module and an early warning module. According to the invention, precise subdivision and efficient monitoring of a photovoltaic zero-carbon material deployment area are realized through the monitoring area division module; meanwhile, the data acquisition error is greatly reduced, and the data accuracy is ensured; a mathematical model is established to perform deep analysis on the acquired data, so that the potential danger problem of the photovoltaic module material can be effectively identified; the comprehensive data processing model is used for calculating a photovoltaic module conversion evaluation value, and a visual effect is provided; by accurately comparing the actual conversion evaluation value of the photovoltaic module with the preset value, the judgment result is ensured to be accurate, and the energy-saving property and safety of the photovoltaic module material are ensured.

A LiGa-based 0.5 In 0.5 A self-driven X-ray detector based on Se2 crystal and its fabrication method. This detector employs an MSM device structure with c-plane LiGa... 0.5 In 0.5 Using Se2 wafers as semiconductor materials and metal materials as electrodes, self-driven X-ray detection can be achieved under zero bias voltage; the above-mentioned self-driven X-ray detector fabrication method includes the following steps: (1) fabricating LiGa 0.5 In 0.5 (1) Se2 crystal; (2) Directional processing of c-plane LiGa 0.5 In 0.5 Se2 wafer; (3) LiGa 0.5 In 0.5 The upper and lower surfaces of the Se2 wafer are polished and passivated; (4) in LiGa 0.5 In 0.5 Metal electrodes are deposited on the upper and lower surfaces of a Se2 wafer. This invention utilizes LiGa... 0.5 In 0.5 The bulk photovoltaic effect generated by the non-centrosymmetric structure of Se2 enabled the fabrication of a self-driven X-ray detector with a simple structure. Furthermore, due to the LiGa... 0.5 In 0.5 Se2 crystals have high resistivity, and the devices fabricated from them have low dark current, enabling highly sensitive X-ray detection.

1. Name of the design product: Solar photovoltaic tile (BC three-curved type). 2. Use of the design product: This design product is used as a photovoltaic tile for building roofs and can generate electricity through photovoltaic effect. 3. Design key points of the design product: Lies in the shape. 4. Picture or photo that best shows the design key points: Perspective view. 5. Other circumstances that need to be explained: Other explanations: The submitted views have clearly shown the design product of this design, and the left view, right view, top view and bottom view are omitted.

The invention discloses a photovoltaic power generation integrated device which comprises a supporting base, a connecting column is rotatably installed on the upper surface of the supporting base, a triangular box is fixedly installed at the upper end of the connecting column, a following mechanism is rotatably installed in the triangular box, a first connecting frame is rotatably installed at one end of the triangular box, and second connecting frames are rotatably installed at the four corners of the first connecting frame. The other end of the following mechanism is rotationally installed at one end of a first connecting frame, first connecting plates are fixedly installed at the four corners of the first connecting frame, second connecting plates are fixedly installed at the ends, rotationally connected with the first connecting frame, of each set of second connecting frames, and a fastening plate is fixedly installed at the center of the first connecting frame. And a brushing mechanism is fixedly mounted at one end of the fastening plate. Through the design of the following mechanism and the brushing and sweeping mechanism, the photovoltaic panel can be adjusted in real time according to the angle of the sun, it is ensured that the photovoltaic panel faces the sun all the time, and according to the photovoltaic effect, when the photovoltaic panel is perpendicular to sunlight, sunlight can be absorbed to the maximum extent.

A near-infrared radiation detector comprises: a substrate comprising a semiconductor; a substrate electrode formed in contact with the substrate; an active layer formed over the substrate, the active layer comprising a ferroelectric material; and an active layer electrode formed in contact with the active layer and substantially transparent to near-infrared radiation. The detector is operable without applied external bias so that, when near-infrared radiation is incident on the detector, charge carriers are generated by a photovoltaic effect in the substrate / active layer heterojunction and a temperature gradient is generated in the active layer, providing a pyro-phototronic current signal indicative of the near-infrared radiation incident on the detector. Also disclosed is a corresponding method of detecting near-infrared radiation.

This application relates to the field of vest technology, disclosing a reflective warning vest, including a vest, an arc-shaped magnetic plate, a magnetic base, a warning light, a magnetic plate, a photovoltaic panel, a storage battery, and a control box. In use, in dimly lit environments at night, the warning light can be activated via the control box to serve as a warning, making it easily observable and alerting others to avoid the area. During this time, the storage battery continuously consumes its charge. In well-lit environments during the day, the photovoltaic panel utilizes the photovoltaic effect at the semiconductor interface to directly convert solar energy into electrical energy, which is then stored in the storage battery to charge it. This compensates for the nighttime power consumption and enables automatic battery charging. Therefore, there is no need to repeatedly remove and recharge the battery, saving time and effort and offering the advantage of ease of use.

A method for manufacturing a solar panel having a solar cell and integrated circuits on the same silicon wafer is disclosed. The solar panel include two groups of semiconductor wafers. Each of the first group of semiconductor wafers includes a solar cell for generating direct current via the photovoltaic effect. Each of the second group of semiconductor wafers includes a solar cell for generating direct current via the photovoltaic effect, and some integrated circuits arranged to perform computations. The integrated circuits are solely powered by the solar cell from the second group and other solar cells from the group of semiconductor wafers.

A linear photovoltaic cell module, comprising: a first inner electrode, which is a linear conductor; a first functional photosensitive layer, which covers the first inner electrode; a second inner electrode, which is a linear conductor; and a second functional photosensitive layer, which covers the second inner electrode, wherein the first functional photosensitive layer and the second functional photosensitive layer are arranged in parallel or in a twisted mode and are electrically connected, and the first functional photosensitive layer and the second functional photosensitive layer have a photovoltaic effect, and the generated output voltages have opposite polarities. In the present invention, positive and negative charges of one end of batteries having two different polarities are recombined by means of an outer electrode and a connecting electrode, and the other ends of the batteries are led out to an outer circuit from respective inner electrodes. The linear photovoltaic cell module has the advantages of a small resistance, low electric-energy loss, simple connection, firmness, etc.

The utility model provides a double-sided double-glass photovoltaic module, which comprises one or more double-sided battery pieces used for absorbing sunlight and performing photovoltaic effect power generation; the light-transmitting glass is positioned on the front surface of the double-sided battery piece and is used for enabling sunlight to penetrate through the light-transmitting glass to reach the front surface of the double-sided battery piece; and the single-sided mirror glass is positioned on the back surface of the double-sided battery piece and is used for reflecting sunlight to the back surface of the double-sided battery piece. According to the utility model, sunlight penetrating through the gaps between the battery pieces can be greatly reflected to the back of the double-sided battery piece while the front of the double-sided battery piece generates power, so that the back of the double-sided battery piece also performs photovoltaic effect power generation, the double-sided power generation efficiency of the battery piece is increased, the power generation capacity is improved, and the cost of the assembly per kilowatt hour is reduced; the device has the effects of saving cost, improving product quality and improving power generation efficiency.

The application discloses a lutetium manganate-based near-infrared light detection film, a preparation method and application thereof, and has a molecular formula of Lu (0.98‑x) Er 0.02 Yb x MnO3, wherein x is 0.04-0.10. The application is prepared by rare earth elements Er and Yb co-doping for regulation, and a Lu (0.98‑x) Er 0.02 Yb x MnO3 base film colloid, when x is 0.04-0.10, the optical absorption range is widened and the band gap is reduced, and due to efficient energy transmission between Er 3+ , Yb 3+ , efficient pumping of Er 3+ is realized, thereby enhancing the photovoltaic effect of the LMO film, greatly improving the photoelectric current density, and improving the responsivity and the detection rate by several times under 850 nm near-infrared wavelength. The up-conversion strategy based on multiple rare earth elements co-doping has positive multiple positive effects on the light detection performance, and promotes the development of the ferroelectric series in the field of light detection. Meanwhile, the material is expected to become a new generation of environment-friendly lead-free ferroelectric film material.

The invention discloses a multiferroic thin film material with a double perovskite structure. The multiferroic thin film material is a Bi2FeCrO6 thin film material. The preparation method comprises the following steps: firstly, preparing a Bi2FeCrO6 system powder sample by adopting a sol-gel method, then drying the powder sample of the material and preparing a block target material, and finally, depositing the block target material on an FTO (Fluorine-doped Tin Oxide) substrate by adopting a pulse laser deposition method to prepare the Bi2FeCrO6 system film, and the material has ferromagnetism, ferroelectricity and photovoltaic characteristics at the same time. According to the method disclosed by the invention, good film quality, high phase purity, stable film element proportion and good adhesion between the film and the substrate can be ensured, the success rate of pure-phase film preparation is high, the repeatability is good, and obvious magnetic, ferroelectric and photovoltaic effects can be observed in a Bi2FeCrO6 system film sample.

The invention relates to the field of photovoltaic power generation, and aims to provide a method for calculating open-circuit voltage and short-circuit current of a photovoltaic cell. Comprising the following steps: enabling a photovoltaic cell to work at any two different set steady-state working points by changing the impedance of a power electronic converter, and respectively applying trace disturbance to form new steady-state working points; the port voltage and current values of the photovoltaic cell are sampled for the four steady-state working points, and the reverse saturation current, the open-circuit voltage and the short-circuit current of the photovoltaic cell are obtained through solving based on the photovoltaic effect basic equation and the voltage and current differential relation when the photovoltaic cell is at the steady-state working points. According to the invention, the power electronic converter is prevented from being regulated under the extreme conditions of open-circuit voltage or short-circuit current and the like, interference on the operation stability of the converter is avoided, power generation power loss is avoided, and system safety and power generation benefits are improved; the calculation process can be simplified, hardware equipment does not need to be additionally added or upgraded, and the system cost can be greatly reduced.

A method for making a partially flexible photovoltaic laminar product (1), comprising the steps of a) providing a substantially horizontal work (2); b) depositing on the surface (2) a first flexible base layer (3) made of fabric coated with a first polymer material; c) depositing on the first base layer (3) a second coupling substrate (5); d) depositing on the coupling substrate (5) at least one third photovoltaic layer (6) provided with at least one cell made of material with photovoltaic effect and electrical junctions wherein the opposite surfaces (6A, 6B) of the at least one third photovoltaic layer (6) are provided with respective coatings (7A, 7B) made of ethylene-vinyl acetate (EVA); e) depositing on the at least one third photovoltaic layer (6) at least one fourth protection layer (12) made of a second polymer material so as to obtain a sandwich structure (13); f) inserting the structure (13) into a treatment chamber (14) and g) maintaining in the chamber (14) controlled thermal (T) and barometric conditions (P) for a predetermined time (t) to carry out the thermoplastic melting and polymerisation of the layers (3, 5, 7A, 7B, 12) maintaining the at least one cell made of material with photovoltaic effect and the junctions unchanged. The coupling layer (5) is single and it is made of at least one first elastomeric material.

The invention belongs to the technical field of display, and relates to a functional film layer, a preparation method thereof and a light-emitting device. The functional film layer comprises a functional material and a P-type doped material; wherein the difference value between the HOMO energy level absolute value of the functional material and the LUMO energy level absolute value of the P-type doped material is 0.1 eV to 1 eV. As the difference value between the HOMO energy level absolute value of the functional material and the LUMO energy level absolute value of the P-type doped material is 0.1 eV to 1eV, electrons in a conduction band of the P-type doped material can be relaxed to a valence band of the functional material according to a photovoltaic effect, so that the valence band of the functional material has a large number of freely movable holes, the conductivity of the functional film layer is further improved, and the photoelectric conversion efficiency is improved. And the service life of the functional film layer is prolonged.

The application discloses a self-powered artificial optical electric synapse with selective detection function and a preparation method thereof, and sequentially grows a polymer dielectric layer and two different ultrathin semiconductor light response layers on a SiO2 / Si substrate, wherein the upper ultrathin semiconductor light response functional layer is semi-covered on the lower ultrathin semiconductor light response layer to form an asymmetric heterojunction, then gold films are transferred to the lower and upper semiconductor light response functional layers as source and drain electrodes by using a non-invasive gold film transfer process, and the preparation of the self-powered artificial optical electric synapse with selective detection function is completed. The self-powered optical electric synapse with selective detection function can selectively detect and process ultraviolet light without any voltage by coupling photovoltaic effect and interface charge capture behavior, and has the ability of wide spectrum detection under the condition of applying voltage, and can simulate the perception and signal processing function of the retina.

A solar energy system is configured to transfer sunlight from a sunlight collection location to a remote sunlight distribution location for photovoltaic effect. The solar energy system includes a bundled array of fiber optic cables, at least one cable pegboard, and at least one solar panel. The cable pegboard is arranged at the remote sunlight distribution location. Micro-connectors on the pegboard secure and orient respective end facets of the fiber optic cables at respective transmitting ends. The solar panel resides adjacent the cable pegboard at the sunlight distribution location, and is optically arranged to receive sunlight transferred from the sunlight collection location through the bundled array of fiber optic cables for photovoltaic effect.

The present invention discloses a solar photovoltaic panel self-protection system, which drives the closing of a protective cover plate through a folding connecting rod mechanism, thereby realizing automatic protection of the photovoltaic panel and avoiding large-area damage of the photovoltaic panel. The protection response speed is fast and the protection efficiency is high, and the system is suitable for coping with sudden and extreme weather conditions. The floating dust on the photovoltaic panel is scrubbed through a scrubbing mechanism to flush away the scrubbed floating dust, thereby ensuring the conversion efficiency of the photovoltaic effect.

The invention discloses a photoelectric logic gate and a multi-mode communication system based on a bidirectional photovoltaic effect, a WSe2 / alpha-MoO3 heterojunction structure is adopted, the photoelectric logic gate comprises a Si / SiO2 substrate, an alpha-MoO3 charge trapping layer and a WSe2 bipolar channel layer, the transfer direction of charges on a heterogeneous interface is controlled through the polarity of gate voltage (Vg), a built-in electric field with a reversible direction is formed in a WSe2 channel, and the bidirectional photovoltaic effect is achieved. And positive / negative polarity photovoltaic response switching of the same light source is realized. Various reconfigurable logic gates such as AND / NAND / XNOR / NOT can be realized by configuring different input / control signals (laser, bias voltage and grid voltage); the grid voltage input, the bias voltage input and the illumination input are cooperatively regulated and controlled, the output current is in four distinguishable states, and multi-mode photoelectric communication is achieved. The single device integrates multiple logic functions, breaks through the limitation of singleness of traditional photoelectric response, and is suitable for a high-density optical calculation and communication system.

The application discloses a dual-color detector with bipolar response, a preparation method and application thereof. The detector comprises a first light absorption layer capable of absorbing light in a first wavelength domain and forming photo-generated carriers based on a photovoltaic effect; a second light absorption layer capable of absorbing light in a second wavelength domain and forming photo-generated carriers based on a photothermoelectric effect, the second light absorption layer cooperating with the first light absorption layer to form a pn heterojunction; a first electrode in electrical contact with the first light absorption layer, and the first electrode being spaced apart from the second light absorption layer; and a second electrode in electrical contact with the second light absorption layer. The dual-color detector has the advantages of high integration, bipolar response, low energy consumption, simple operation, high accuracy, and great significance for simplifying the design of an optical communication system and realizing an efficient signal modulation scheme.

The invention discloses a self-powered gate organic field effect transistor based on a water photovoltaic effect and a preparation method thereof, and is characterized in that the self-powered gate organic field effect transistor sequentially comprises a water photovoltaic gate, an insulating layer, an organic semiconductor layer, a source electrode and a drain electrode from bottom to top, and the source electrode and the drain electrode are arranged on the organic semiconductor layer. Wherein the water photovoltaic grid electrode sequentially comprises a flexible substrate, a bottom electrode, a composite film and a top electrode from bottom to top; the water photovoltaic grid composite film comprises a PVA / LiCl polymer film and a plurality of layers of GO films; and the top electrode is arranged on the PVA / LiCl film. The bottom electrode of the water photovoltaic grid electrode is connected with the source electrode through a wire, so that a voltage difference is generated between the grid electrode and the source electrode, a carrier is induced at the interface of the insulating layer and the semiconductor layer, and a plurality of water photovoltaic grid electrodes can be vertically overlapped and connected in series to increase output voltage on the existing device structure according to actual conditions; the source electrode and the drain electrode are connected with an external power supply, and voltage is applied, so that the transistor works normally.

The application relates to the technical field of silicon nano array, and proposes a permeation passivation method for a silicon nano array, which comprises the following steps: dropping a passivation solution onto the surface of the silicon nano array, standing until permeation, and completing passivation. Through the technical scheme, 1) the passivation problem of the silicon nano array is solved, the silicon nano array prepared through physical etching and chemical etching is effectively and high-quality passivated, large-scale vacuum equipment required by an existing passivation scheme is eliminated, the process is simplified, the cost is reduced, and the safety is improved; 2) the silicon nano array is permeation passivated, so that the silicon nano array simultaneously has low reflection loss and low recombination loss functions, meets two necessary conditions of inverse Auger abnormal photovoltaic effect (that is, one photon generates two pairs of electron-hole pairs), the external quantum efficiency is greater than 100%, the SQ theoretical limit of the single-crystal silicon cell efficiency can be broken through, and higher cell photoelectric conversion efficiency can be obtained.

The present invention discloses a copper-zinc-tin nitride Schottky junction and a preparation method thereof, wherein the method comprises the following steps: in a flowing nitrogen and argon atmosphere, depositing a zinc-tin alloy target with a Zn:Sn ratio of 5:1 on a substrate by radio frequency sputtering, thereby obtaining a zinc-tin nitride thin film. In a flowing argon atmosphere, the zinc-tin nitride thin film is annealed at 300 to 400°C, thereby obtaining an annealed zinc-tin nitride thin film. In a flowing argon atmosphere, depositing a copper target on the annealed zinc-tin nitride thin film by direct current sputtering, thereby obtaining a copper-zinc-tin nitride Schottky junction. The present invention solves the problem that the copper-zinc-tin nitride Schottky junction prepared by the existing method has poor rectification effect and no photovoltaic effect.

The invention relates to the technical field of double-sided photovoltaic modules, and discloses a double-sided photovoltaic module and a laminated structure thereof, and the double-sided photovoltaic module comprises a stable support, a positioning block which is fixedly installed at the bottom of the stable support, a photovoltaic panel which is arranged at the top of the stable support, and a photovoltaic module which is arranged at the side position of the stable support. The photovoltaic module comprises a stabilizing mechanism arranged on the side of the stabilizing support, the photovoltaic panel comprises a photovoltaic mechanism, the photovoltaic mechanism is located above the stabilizing mechanism, the photovoltaic mechanism is arranged on the inner wall of the photovoltaic panel, and a cooling mechanism is arranged on the inner wall of the photovoltaic panel. The problems that an existing photovoltaic module has certain limitation, a traditional single-face photovoltaic module can only utilize illumination of the front face, the back face can not effectively utilize light energy, consequently, the overall power generation efficiency is limited, under some complex illumination conditions, the photovoltaic effect can not be fully exerted, and the light energy absorption and conversion efficiency of the front face and the back face can not be well balanced are solved.

The invention belongs to the technical field of semiconductor devices, and particularly relates to a preparation method of a semiconductor X-ray detector, by adopting a PNN type double built-in electric field configuration with the free electron density increasing step by step, the intensity of built-in electric fields is enhanced, meanwhile, the electron transporting capacity of the built-in electric fields is expanded, and under the condition that no external power supply exists, the performance of the X-ray detector is improved. Self energy supply is achieved through the Compton effect and the photovoltaic effect of the X-rays, and detection of the X-rays is completed. A built-in electric field of the detector is strong enough, absorption of X-ray energy and transport of carriers are better than those of a traditional X-ray detector, and detection is sensitive; as the detector is not provided with a power supply, the detector has the technical effects of no power consumption, low failure rate, light weight, small size and convenience in carrying. The invention also provides a non-transitory readable recording medium storing the program of the method and a system comprising the medium, and the program can be called through a processing circuit to execute the method.

Flexible composite film ferroelectric memory and sensor under flexoelectric photovoltaic effect. The application relates to the application of a flexoelectric photovoltaic device in a ferroelectric memory, in particular to a flexible composite film with flexoelectric photovoltaic effect and the application in a memory and a sensor. The flexible composite film comprises an organic support film, at least one group of inorganic nanometer arrays is inlaid in the organic support film, and the inorganic nanometer arrays have a flexoelectric effect; any of the inorganic nanometer arrays comprises a plurality of inorganic nanometer tubes or inorganic nanometer fibers arranged in a direction, and the length direction of the inorganic nanometer tubes or inorganic nanometer fibers is less than 30 degrees with the thickness direction of the organic support film. The flexible composite film has the characteristics of high flexoelectric coefficient, large photovoltaic current, good flexibility and no easy failure after repeated bending.