1527 results about "Amorphous silicon" patented technology

The embodiment of the invention relates to the field of photovoltaic technology, and provides a solar cell and a preparation method thereof, and a photovoltaic module, so as to avoid the electric leakage condition of doped regions with different doping types, thereby improving the photoelectric conversion efficiency. The solar cell comprises a substrate which comprises a front surface and a back surface which are oppositely arranged; the back surface of the substrate comprises a first doped region and a second doped region which are sequentially arranged at an interval, and an insulating region arranged between the first doped region and the second doped region; the doped polycrystalline silicon passivation contact structure is arranged in the first doped region, the doped amorphous silicon structure is arranged in the second doped region, and the passivation layer is arranged in the insulating region; the doped polycrystalline silicon passivation contact structure comprises a tunneling oxide layer and a doped polycrystalline silicon layer which are sequentially laminated on the back surface of the substrate; the doped amorphous silicon structure comprises a doped amorphous silicon layer, and the doped polycrystalline silicon layer and the doped amorphous silicon layer are different in doping type; wherein the passivation layer is not overlapped with the doped polycrystalline silicon passivation contact structure and the doped amorphous silicon structure respectively along the thickness direction of the substrate.

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell with a passivated specific light receiving surface and a preparation method and application thereof.The back contact cell comprises a substrate, the substrate is provided with a backlight surface and a light receiving surface, the light receiving surface of the substrate is sequentially provided with a first tunneling oxide layer, a doped amorphous silicon layer and a silicon medium anti-reflection layer, the thickness of the first tunneling oxide layer is 0.2-1.5 nm, and the thickness of the doped amorphous silicon layer is 0.2-1.5 nm; the doped amorphous silicon layer is doped with an oxygen element and a hydrogen element, the first tunneling oxide layer is doped with a hydrogen element, and the content of the hydrogen element close to the side of the doped amorphous silicon layer in the first tunneling oxide layer is greater than the content of the hydrogen element close to the side of the substrate. According to the invention, good passivation effect and optical loss can be taken into account, and the passivation effect is enhanced, so that the passivation effect and current of the battery are improved, the efficiency of the battery is improved, and the equipment cost is low.

The invention relates to a back contact solar cell and a preparation method thereof. The back contact solar cell comprises a monocrystalline silicon substrate, a tunneling oxide layer, a first doping type polycrystalline silicon layer, a second doping type polycrystalline silicon layer, an intrinsic amorphous silicon layer, a first electrode and a second electrode. The tunneling oxide layer is arranged on the first side of the monocrystalline silicon substrate, the first doping type polycrystalline silicon layer, the second doping type polycrystalline silicon layer and the intrinsic amorphous silicon layer are respectively arranged on the tunneling oxide layer, and the intrinsic amorphous silicon layer is arranged between the first doping type polycrystalline silicon layer and the second doping type polycrystalline silicon layer. The back contact solar cell is provided with an isolation groove, and the isolation groove divides the intrinsic amorphous silicon layer into a first part connected to the first doping type polycrystalline silicon layer and a second part connected to the second doping type polycrystalline silicon layer. According to the back contact solar cell, the interface defect of the monocrystalline silicon substrate at the back contact solar cell is overcome, and the insulation of two different doping types of media is realized.

The invention discloses a solar cell and a preparation method and application thereof, and relates to the technical field of solar cells. P-type doped regions and N-type doped regions are alternately arranged on the back surface of the crystalline silicon substrate, a boron diffusion doped layer, a first passivation layer and a first antireflection layer are sequentially arranged in the P-type doped regions, and a phosphorus-doped silicon oxide layer, a phosphorus-doped polycrystalline silicon layer, a second passivation layer and a second antireflection layer are sequentially arranged in the N-type doped regions from the surface of the crystalline silicon substrate. A traditional TBC battery P region mostly adopts a two-step process of intrinsic amorphous silicon deposition and boron diffusion to form a polycrystalline silicon layer, but the P region does not contain the polycrystalline silicon layer and can be prepared through a one-step boron diffusion process, so that the process steps can be reduced, and the process time can be shortened; and the action of laser and P-region polycrystalline silicon is avoided, the patterning difficulty of the battery is reduced, and the production yield of the battery can be greatly improved.

The invention relates to a texturing additive composition for a silicon wafer and a texturing solution. The texturing additive composition comprises the following components: 0.01-7.5 wt% of a nucleating agent; 0.05 to 5.5 wt% of an etching control agent; 0.0001 to 3.5 wt% of a dispersant; 0.0 to 2.0 wt% of a surfactant; 0.0 to 5.0 wt% of a pH conditioning agent; and water. The texturing additive composition and the texturing liquid can be matched with the special thin film deposition requirement of the heterojunction solar cell, and the synergistic effect of the components in the texturing additive composition can optimize the texturing structure combination on the basis of ensuring the texturing full rate, so that the texturing pyramid distribution is uniform, and the texturing quality is improved. And the apparent reflectivity of the surface of the silicon wafer is lower. The suede structure combination is beneficial to deposition of an amorphous silicon film in the next process of the heterojunction solar cell, and meanwhile, the suede structure combination has excellent light trapping performance.

The invention relates to a back contact solar cell and a preparation method thereof. The back contact solar cell comprises a monocrystalline silicon substrate, a tunneling oxide layer, a first doping type polycrystalline silicon layer, a second doping type polycrystalline silicon layer, an intrinsic amorphous silicon layer, a first electrode and a second electrode, the tunneling oxide layer is arranged on one side of the monocrystalline silicon substrate, and the first doping type polycrystalline silicon layer, the second doping type polycrystalline silicon layer and the intrinsic amorphous silicon layer are respectively arranged on the tunneling oxide layer. The intrinsic amorphous silicon layer is arranged between the first doping type polycrystalline silicon layer and the second doping type polycrystalline silicon layer, the first electrode is connected to the first doping type polycrystalline silicon layer, and the second electrode is connected to the second doping type polycrystalline silicon layer. According to the back contact solar cell, the generation of an electric leakage channel can be prevented, and the intrinsic amorphous silicon layer can perform chemical passivation on the monocrystalline silicon substrate, so that the conversion efficiency of the cell is improved.

The embodiment of the invention relates to the photovoltaic field, and provides a back contact cell and a manufacturing method thereof, a back contact laminated cell and a photovoltaic module, and the manufacturing method comprises the steps: providing a substrate with a first surface and a second surface which are opposite to each other, and the second surface comprises a first region and a second region which are alternately arranged along a second direction; forming a laminated structure comprising a tunneling layer, a doped polycrystalline silicon layer and a first protection layer which are stacked on the first region; forming an initial second passivation lamination layer which covers the second surface and comprises an intrinsic amorphous silicon film and a doped amorphous silicon film which are stacked; forming a second protection layer on one side, far away from the substrate, of the doped amorphous silicon film; etching the first region by adopting a first laser etching process; and taking the second protection layer on the second region as an etching barrier layer, taking the first protection layer as an etching stop layer, and removing the initial second passivation lamination layer or the second protection layer and the initial second passivation lamination layer remaining on the first region by adopting a first etching solution, thereby at least facilitating the improvement of the photoelectric conversion efficiency of the back contact battery.

The invention discloses a preparation method of a back contact solar cell, which comprises the following steps of: depositing a first tunneling oxide layer, a non-activated amorphous silicon layer containing a first doping element and a silicon oxide layer on a second surface of a silicon substrate, removing the non-activated amorphous silicon layer containing the first doping element and the silicon oxide layer in an E2 region and an E3 region, and annealing to obtain the back contact solar cell. And forming a first doped polycrystalline silicon layer and a silica glass layer containing a first doping element on the surface of the E1 region. According to the preparation method provided by the invention, the process steps of the back contact solar cell, especially the TBC cell, can be effectively optimized, the process time is shortened, the production cost is reduced, and commercialized popularization of the TBC cell is facilitated.

A method for treating a stack includes a substrate of n-doped crystalline silicon and a passivation layer of hydrogenated amorphous silicon disposed on a face of the substrate, the method including exposing the stack to electromagnetic radiation during a treatment period (t) less than or equal to 12 s, the electromagnetic radiation having an irradiance (E) greater than or equal to 200 kW / m2.

The invention relates to the technical field of solar cells, in particular to a silicon-based heterojunction solar cell and a preparation method thereof. The embodiment of the invention provides a silicon-based heterojunction solar cell which comprises a silicon substrate, a first passivation layer, an N-type doping layer and a first transparent electrode which are sequentially arranged in the first direction, and the first direction is the direction, pointing to the first transparent electrode from the silicon substrate, in the thickness direction of the silicon substrate; the first passivation layer comprises a plurality of sub-layers which are sequentially arranged along the first direction: an intrinsic oxygen-doped amorphous silicon layer and an N-surface intrinsic amorphous silicon layer; and along the first direction, the refractive index of the intrinsic oxygen-doped amorphous silicon layer is gradually increased. According to the embodiment of the invention, passivation can be ensured, the conductivity can be improved, and the open-circuit voltage and the fill factor can be effectively improved.

The invention relates to the technical field of heterojunction solar cells, and particularly discloses a selective electrode contact heterojunction cell preparation method and a heterojunction cell, and the method comprises the steps: carrying out the first texturing of a silicon wafer substrate, carrying out the mask layer preparation of the textured silicon wafer, and carrying out the first patterning processing of the silicon wafer. Performing slotting treatment on two sides of the silicon wafer based on picosecond laser, performing secondary texturing on the silicon wafer, placing the cleaned silicon wafer in a second texturing mixed solution so as to generate a large textured pyramid structure on the inner bottom surface of a groove in the two sides of the silicon wafer, and removing the first mask layer from the silicon wafer after secondary texturing to obtain a second textured pyramid structure; sequentially depositing a plurality of layers including an intrinsic amorphous silicon layer and the like on the two surfaces of the silicon wafer, printing a second mask layer in a counterpoint manner in other areas of the silicon wafer which is provided with the groove in the first time of patterning based on exposure and development, electroplating a copper grid line on the silicon wafer, and sequentially removing the second mask layer and a copper seed layer on the silicon wafer after electroplating the grid line; the selective electrode contact copper grid line heterojunction solar cell is obtained, the problem of grid separation of the copper grid lines is solved, and the cell efficiency is improved.

Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer (e.g., spacer footing) needs to be selectively etched in a presence of an exposed silicon-containing layer, such as SiOC, SiON, SiONC, amorphous silicon, SiC, or SiN. In order to reduce damage to the silicon-containing layer the process involves passivating the silicon-containing layer towards a tin oxide etch chemistry, etching the tin oxide, and repeating passivation and etch in an alternating fashion. For example, passivation and etch can be each performed between 2-50 times. In one implementation, passivation is performed by treating the substrate with an oxygen-containing reactant, activated in a plasma, and the tin oxide etching is performed by a chlorine-based chemistry, such as using a mixture of Cl2 and BCl3.

The embodiment of the invention provides a back contact solar cell, a preparation method thereof and a photovoltaic module. The preparation method of the back contact solar cell comprises the following steps: providing a substrate, wherein the substrate comprises a silicon wafer, a first tunneling oxide layer and a first intrinsic amorphous silicon layer which are stacked in sequence; performing crystallization treatment on the first intrinsic amorphous silicon layer on the substrate so as to convert amorphous silicon in the first intrinsic amorphous silicon layer into polycrystalline silicon and obtain a first polycrystalline silicon layer; and carrying out boron diffusion on the first polycrystalline silicon layer to obtain a boron-doped layer. According to the method provided by the embodiment of the invention, after the first polycrystalline silicon layer is formed by performing crystallization treatment on the first intrinsic amorphous silicon layer, boron diffusion is performed on the first polycrystalline silicon layer, so that the boron-doped layer with a relatively good passivation effect can be obtained, and meanwhile, the process stability of preparing the back contact solar cell can be improved.

The invention discloses a photovoltaic cell preparation method for improving ALD passivation and a photovoltaic cell, and belongs to the technical field of photovoltaic cells. The preparation method comprises the following steps: performing texturing, front boron diffusion, oxidation, back etching and polishing on a silicon wafer, preparing a back tunneling oxide layer and an amorphous silicon layer, performing acid pickling, removing the tunneling oxide layers on the back and the side surfaces through cleaning, preparing front and back passivation films, printing electrodes and the like, washing with water: washing with a cleaning solution containing potassium hydroxide and hydrogen peroxide, washing with water, pickling, and washing with water; repeating the steps; and cleaning with the oxidizing liquid again, and washing with water. According to the invention, through the improvement of the processing technology of the tunneling oxide layer and the amorphous silicon back winding plating, the yield of the battery production line is improved, the control of the production line is simpler and more convenient, the promotion of the passivation of the oxide layer before ALD is more stable, and the battery conversion efficiency of the production line is further improved.

The invention discloses a back contact cell and a preparation method thereof, a laminated cell and a photovoltaic module, and belongs to the technical field of photovoltaics, the back contact cell comprises a substrate, the substrate comprises a first region, a second region and a spacer region located between the first region and the second region, and a tunneling oxide layer and a doped polycrystalline silicon layer are arranged in the first region and the spacer region. The doped polycrystalline silicon layer is arranged on the surface, deviating from the substrate in the thickness direction, of the tunneling oxide layer, the amorphous silicon passivation layer and the doped amorphous silicon layer are arranged in the second region and the spacer region, and the doped amorphous silicon layer is arranged on the surface, deviating from the substrate in the thickness direction, of the amorphous silicon passivation layer. And the amorphous silicon passivation layer in the spacer region is positioned on one side, deviating from the substrate along the thickness direction, of the doped polycrystalline silicon layer. The insulating layer is arranged between the amorphous silicon passivation layer and the doped polycrystalline silicon layer, the insulating layer comprises a first insulating part which extends in the thickness direction and is arranged at the junction position of the second region and the spacer region, the first insulating part can prevent the back contact cell from leaking electricity in the horizontal direction, and the overall electrical performance of the back contact cell is improved.

N-type gate-all-around (nanosheet, nanoribbon, nanowire) field-effect transistors (GAAFETs) vertically stacked on top of p-type GAAFETs in complementary FET (CFET) devices comprise non-crystalline silicon layers that form the n-type transistor source, drain, and channel regions. The non-crystalline silicon layers can be formed via deposition, which can provide for a simplified processing flow to form the middle dielectric layer between the n-type and p-type GAAFETs relative to processing flows where the silicon layers forming the n-type transistor source, drain, and channel regions are grown epitaxially.

The invention relates to a solar cell and a preparation method thereof. According to the preparation method of the solar cell, the amorphous silicon layer is formed on the back tunneling oxide layer, the doped polycrystalline silicon layer is formed in the first process through diffusion doping treatment, and the doped silicon oxide layer is formed on the doped polycrystalline silicon layer in the second process. And after the doped silicon oxide layer is formed, selective heavy doping of the back surface is realized by adopting a laser doping process, and a selective emitter is formed in a heavy doping region. On one hand, the doped silicon oxide layer can provide sufficient impurity ions for SE doping, and on the other hand, the doped silicon oxide layer can protect the tunneling oxide layer and reduce or prevent the tunneling oxide layer from being damaged in the SE laser doping process, so that a good passivation effect can be achieved.

The invention relates to the technical field of back contact solar cells, in particular to a back contact solar cell with a double-passivation structure and a preparation method thereof, and the front surface of the cell sequentially comprises an antireflection film, a suede structure and an N-type monocrystalline silicon wafer from outside to inside; a back field region on the back surface of the back contact solar cell sequentially comprises a metal electrode, an antireflection film, a second phosphorus-doped polycrystalline silicon layer, a second tunneling oxide layer, a first phosphorus-doped polycrystalline silicon layer, a first tunneling oxide layer and an N-type monocrystalline silicon wafer from outside to inside; the emitter region sequentially comprises a metal electrode, an antireflection film, a transparent conductive film, a boron-doped amorphous silicon layer, an intrinsic amorphous silicon layer and an N-type monocrystalline silicon wafer from outside to inside; the isolation area sequentially comprises an antireflection film, a suede structure and an N-type monocrystalline silicon wafer from outside to inside. A P-type TOPCon structure of an emitter region of the TBC battery is optimized into an intrinsic amorphous silicon + P-type amorphous silicon passivation structure with better passivation performance and contact performance, and the conversion efficiency is improved.

The invention provides a back contact solar cell and a preparation method thereof, and belongs to the technical field of solar cells, and the preparation method comprises the steps: depositing a tunneling oxide layer and a doped polycrystalline silicon layer on the back surface of an n-type silicon wafer, and sintering high-temperature silver paste in a pre-designed interdigital region of an N region on the back surface of the silicon wafer to form a first electrode; then, the tunneling oxide layer, the doped polycrystalline silicon layer and the mask layer in the interdigital region of the back P region are ablated through laser; depositing an amorphous silicon layer and a TCO layer on the back surface of the n-type silicon wafer; sintering low-temperature silver paste on the TCO layer of the P region to form a second electrode; and finally, scanning a grid line formed by sintering the high-temperature silver paste through laser, and melting the amorphous silicon layer, the TCO layer and the mask layer on the grid line and around the grid line, so that the first electrode is isolated from the second electrode. The high-temperature silver paste is used for partially replacing the low-temperature silver paste, so that the use cost of the paste is reduced; through laser scanning grid line ablation, a gap region does not need to be manufactured independently, the manufacturing process is simplified, and the manufacturing cost is reduced.

The invention provides a solar cell and a preparation method thereof, and relates to the technical field of solar cells. The method for preparing the solar cell comprises the following steps: forming a tunneling oxide layer on one side of the back surface of a silicon substrate; forming a first intrinsic amorphous silicon layer, a first doped amorphous silicon layer and a second doped amorphous silicon layer; forming a second intrinsic amorphous silicon layer, a third doped amorphous silicon layer and a fourth doped amorphous silicon layer; performing annealing treatment on the silicon substrate to enable the first intrinsic amorphous silicon layer, the first doped amorphous silicon layer and the second doped amorphous silicon layer to form a first doped layer, enable the second intrinsic amorphous silicon layer, the third doped amorphous silicon layer and the fourth doped amorphous silicon layer to form a second doped layer, and enabling the first doped layer to point to the direction of the silicon substrate along the first doped layer, the concentration of the gallium element in the first doping layer is reduced; and the concentration of the boron element in the second doped layer is reduced. Therefore, the formed p-type doped polycrystalline silicon can achieve a good passivation effect, the concentration of the doping element B on the outer side is high, and the contact resistance can be reduced.

The invention belongs to the technical field of back contact photovoltaic cells, and particularly relates to a back contact photovoltaic cell with high-concentration co-doped regions and a manufacturing method and application thereof.The back contact photovoltaic cell with the high-concentration co-doped regions is characterized in that N-type doped regions and P-type doped regions which are alternately distributed are arranged on the backlight face of an intrinsic amorphous silicon layer, and the high-concentration co-doped regions are arranged between the N-type doped regions and the P-type doped regions; a doping source of the co-doped region comprises doping source phosphorus of the N-type doped region and doping source boron of the P-type doped region, the co-doped region, the doping source of the N-type doped region and the doping source of the P-type doped region form a specific concentration gradient structure, and the specific concentration gradient structure meets the condition that the doping concentration of phosphorus contained in the co-doped region is greater than that of phosphorus contained in the N-type doped region; the doping concentration of boron contained in the co-doped region is greater than the doping concentration of boron in the P-type doped region. The carrier transport and collection efficiency is optimized, the fill factor and open-circuit voltage are improved, the cell conversion efficiency and stability are improved, the preparation process is simple, and multiple times of opening etching are not needed.

The embodiment of the invention relates to the photovoltaic field, and provides a back contact battery and a manufacturing method thereof, a laminated battery and a photovoltaic module, the back contact battery comprises a substrate, the substrate is provided with a first surface side and a second surface side which are opposite to each other along a first direction, and the second surface side comprises first regions and second regions which are alternately arranged along a second direction; the tunneling layer is at least located on the first region; the first doped semiconductor layer is located on the side, away from the substrate, of the tunneling layer; the first transparent conducting layer is located on the side, away from the substrate, of the first doped semiconductor layer, and the surface, away from the substrate, of the first transparent conducting layer is provided with multiple light trapping particles; the amorphous silicon layer is at least located on the second region; the second doped semiconductor layer is positioned on one side, far away from the substrate, of the amorphous silicon layer; the second transparent conductive layer is located on the side, away from the substrate, of the second doped semiconductor layer, a gap is formed between the first transparent conductive layer and the second transparent conductive layer, and at least the light trapping effect and the carrier collection efficiency of the back contact cell are improved.

The invention discloses a preparation method of a passivation contact cell with double tunneling polycrystalline silicon layers. A first tunneling oxide layer, a first intrinsic amorphous silicon layer, a low-doping p-type amorphous silicon layer, a second tunneling oxide layer, a high-doping p-type amorphous silicon layer and a first silicon dioxide mask layer are sequentially deposited in a p region on the back surface of a silicon wafer; sequentially depositing a third tunneling oxide layer, a second intrinsic amorphous silicon layer, a low-doping n-type amorphous silicon layer, a fourth tunneling oxide layer, a high-doping n-type amorphous silicon layer and a second silicon dioxide mask layer in an n region on the back surface of the silicon wafer; and the p-type amorphous silicon and the n-type amorphous silicon are simultaneously converted into p-type polycrystalline silicon and n-type polycrystalline silicon through high-temperature annealing crystallization treatment, so that the preparation of the p-region and n-region dual-tunneling passivation contact structure of the TBC battery is realized. The doping level and passivation performance of the p-region p-type polycrystalline silicon and the n-region n-type polycrystalline silicon are improved, the conversion efficiency of the TBC battery is improved, the production steps are reduced, and the preparation cost is reduced.

A preparation method of a p-region double-tunneling passivation contact TBC battery comprises the steps that a first tunneling oxide layer, a first intrinsic amorphous silicon layer, a low-doping p-type amorphous silicon layer, a second tunneling oxide layer, a high-doping p-type amorphous silicon layer and a silicon dioxide mask layer are sequentially deposited in a P region on the back face of a silicon wafer, and then the p-type amorphous silicon layer is converted into p-type polycrystalline silicon through high-temperature annealing crystallization treatment. According to the invention, the preparation of the p-region double-tunneling passivation contact structure of the TBC battery is realized, the doping level and passivation performance of p-type polycrystalline silicon in the p region are improved, the conversion efficiency of the TBC battery is improved, and the preparation cost is reduced.

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell with a specific passivation structure and a manufacturing method and application of the back contact cell. A second semiconductor layer in the back contact cell comprises an amorphous silicon layer and a second doped crystalline silicon layer which are sequentially arranged from the back face of a silicon wafer to the outside; the second doped crystalline silicon layer comprises a second doped microcrystalline region and second doped amorphous regions located on the two sides of the second doped microcrystalline region, the second doped microcrystalline region is located at the position corresponding to the second semiconductor opening region and makes contact with the conductive film layer, and the second doped amorphous regions are laid at the end of the side face of the first doped polycrystalline silicon layer and outside the back face of the adjacent part of the first doped polycrystalline silicon layer; wherein the crystallization rate of the second doped microcrystalline region is 5%-80%. According to the invention, the bulk resistivity of the second doped crystalline silicon layer can be greatly reduced, and the contact resistivity between the second doped crystalline silicon layer and the conductive film layer is also reduced, so that the series resistance of the cell is greatly reduced, the leakage current is effectively avoided, and the cell efficiency is improved.

The invention relates to the technical field of photovoltaic cells, and provides copper electrode slurry, a metal electrode, a preparation method of the metal electrode and a photovoltaic cell. The copper electrode slurry comprises a metal composition, a dispersion reducing agent, a composite curing agent and an optional solvent, the metal composition at least comprises copper powder and optional gold powder and / or silver powder; the composite curing agent comprises thermosetting resin and a latent curing agent; wherein the mass ratio of the metal composition to the composite curing agent is (7-30): 1. The copper electrode paste provided by the invention replaces expensive silver paste, so that the manufacturing cost of a solar cell energy electrode is greatly reduced. According to the method for preparing the metal electrode, the position of the copper electrode can be precisely machined, damage to the amorphous silicon layer is avoided, remelting and solidification of the copper electrode are achieved through multiple times of laser scanning, and the problem that the adhesive force between the copper electrode and the substrate is poor is effectively solved.

The invention discloses a porous carbon-loaded nano-silicon negative electrode and a preparation method thereof. According to the method, amorphous silicon grows in situ on a porous carbon electrode template based on electrochemical deposition of a first electrochemical deposition system, and carbon coating is carried out again by using a second electrochemical deposition system, so that the porous carbon-loaded nano-silicon negative electrode is obtained. The silicon-carbon negative electrode for the lithium ion battery is safely prepared by utilizing an electro-deposition technology, the porous carbon is firstly prepared into the negative electrode piece, silicon is deposited into the porous carbon by utilizing the electro-deposition technology, and the prepared silicon-carbon negative electrode can obtain excellent electrical performance.

The utility model discloses a system for treating amorphous silicon powder in electronic-grade polycrystalline silicon tail gas, relates to the technical field of polycrystalline silicon production, and mainly aims to remove and reduce the amorphous silicon powder in the tail gas and reduce the failure rate of tail gas recovery unit equipment. According to the main technical scheme, the treatment system for the amorphous silicon powder in the electronic-grade polycrystalline silicon tail gas is characterized in that the upper end of a tower body is connected to an exhaust pipe, and the lower end of the tower body is connected to a filter; the separation part comprises a spraying mechanism and a cyclone separation mechanism, the spraying mechanism and the cyclone separation mechanism are sequentially arranged in the tower body from top to bottom, the spraying mechanism comprises a spraying structure and a filler structure which are sequentially arranged from top to bottom, a tangential inlet pipe of the cyclone separation mechanism penetrates through the side wall of the tower body, and a tangential outlet pipe of the cyclone separation mechanism penetrates through the side wall of the tower body. A cover body is arranged at an upper end outlet of the cyclone separation mechanism and is used for preventing spraying liquid from entering the cyclone separation mechanism through the upper end outlet.

A preparation method for a solar cell includes: providing a silicon wafer having a first surface and a second surface opposite to the first surface; forming an ultrathin silicon oxide layer on the first surface of the silicon wafer, and sequentially forming a phosphorus-doped amorphous silicon layer and a silicon oxide mask layer on the ultrathin silicon oxide layer; and annealing the silicon wafer to densify the silicon oxide mask layer and convert the phosphorus-doped amorphous silicon layer into a phosphorus-doped polycrystalline silicon layer.

The embodiment of the invention relates to the photovoltaic field, and provides a photovoltaic cell and a manufacturing method thereof, a laminated cell and a photovoltaic module, the photovoltaic cell comprises a substrate with a front surface and a back surface opposite to each other along a first direction, and the back surface is provided with first metallized regions and first non-metallized regions which are alternately arranged; the tunneling layer and the doped polycrystalline silicon layer are located on the back face and are sequentially stacked in the first direction; the amorphous silicon layers are arranged at intervals and embedded in the part, located in the first metallization region, of the doped polycrystalline silicon layer, and the first thickness of the amorphous silicon layers is smaller than the second thickness of the part, located in the first non-metallization region, of the doped polycrystalline silicon layer in the first direction; the back electrodes are in one-to-one correspondence with the amorphous silicon layers and are at least in contact connection with the amorphous silicon layers, and the back electrodes are embedded into the amorphous silicon layers with at least partial thickness in the first direction. The embodiment of the invention is at least beneficial to improving the light absorptivity of the substrate and avoiding further permeation of the electrode so as to comprehensively improve the photoelectric conversion efficiency of the photovoltaic cell.