137 results about "Silicon monoxide" patented technology

The application provides a negative electrode material and a preparation method thereof and a secondary battery, and relates to the technical field of battery materials. The negative electrode material comprises a silicon-based inner core and a carbon layer coated on the surface of the silicon-based inner core, wherein the silicon-based inner core comprises nanosilicon and a silicate containing a metal element M; the negative electrode material is subjected to section analysis and energy spectrum analysis, and meets the conditions of k1<=10, k2<=5 and 0.1 The preparation method of the negative electrode material comprises the following steps: heating and evaporating pre-disproportionated silicon monoxide material and M metal source material to obtain silicon monoxide gas and metal source gas; mixing and condensing the two kinds of gas to obtain an inner core material; and performing carbon coating treatment to obtain the negative electrode material. In the negative electrode material prepared by the application, the metal silicate effectively separates the nanosilicon domain and the silicon oxide domain, and is uniformly distributed, and the negative electrode material has high initial efficiency and excellent cycle performance.

An anode material, including a matrix material, and the matrix material comprises carbon-doped silicon monoxide, and a content of the carbon ranges from 0.5% to 10% based on a total mass of the carbon and silicon monoxide. The anode material can significantly improve the cycle performance of an electrochemical device at room temperature and high temperature.

The invention provides a porous carbon material for a silicon-carbon negative electrode. The porous carbon material comprises a porous carbon skeleton with a graded pore structure; the silicon-based active units are uniformly dispersed in mesopores and macropores of the porous carbon skeleton, and each silicon-based active unit is composed of a nanometer silicon particle inner core and a silicon monoxide layer coating the surface of the nanometer silicon particle inner core; and the conductive reinforced shell is a gas-phase cracking carbon layer which is completely coated on the outer surface of the complex of the porous carbon skeleton and the silicon-based active unit. The preparation method of the porous carbon material comprises the following steps: preparing a porous carbon skeleton precursor, carrying out graded pore-forming treatment, carrying out surface functionalization treatment, compounding the silicon-based active units, constructing a conductive reinforced shell, carrying out element doping treatment and functionalizing pore channels. The cycle stability and environmental protection property of the silicon-carbon negative electrode are synergistically improved through graded pore constrained expansion, carboxyl bonding stable interface and vapor deposition carbon layer optimized conductivity.

An etching method includes: providing, to an interior of a chamber, a substrate having a three-layered film formed by stacking a first silicon oxide-based film, a silicon nitride-based film, and a second silicon oxide-based film; and collectively etching the three-layered film using a HF—NH3-based gas in the interior of the chamber while adjusting a gas ratio in each of the first silicon oxide-based film, the silicon nitride-based film, and the second silicon oxide-based film.

A technique enabling wet etching of a first silicon oxide film with high selectivity with respect to a metal film and a second silicon oxide film is provided. A substrate processing method of wet-etching a substrate having a stacked structure including a metal film, a first silicon oxide film, and a second silicon oxide film having a moisture content lower than that of the first silicon oxide film is provided. The substrate processing method includes performing an etching while increasing etching selectivity of the first silicon oxide film with respect to the second silicon oxide film and the metal film by supplying an etching liquid, which is prepared by diluting sulfuric acid, hydrogen peroxide and hydrofluoric acid in an anhydrous organic solvent, to the substrate such that the metal film, the first silicon oxide film, and the second silicon oxide film are simultaneously exposed to the etching liquid.

Embodiments of this disclosure relate to a method for selectively depositing polysilicon after forming a fluid polymer film to protect a substrate surface within a feature. A first silicon (Si) layer is deposited by physical vapor deposition (PVD). A fluid polymer film is formed on the first silicon (Si) layer on the bottom. A portion of the first silicon (Si) layer is selectively removed from the top surface and at least one side wall. The fluid polymer film is removed. In some embodiments, a second silicon (Si) layer is selectively deposited on the first silicon (Si) layer to fill the feature. In some embodiments, the remaining portion of the first silicon (Si) layer on the bottom is oxidized to form a first silicon oxide (SiO₂) on the bottom. x ) forms a layer, and a silicon (Si) layer or a second silicon oxide (SiO) layer x The ) layer is the first silicon oxide (SiO x It is deposited on top of layers.

The invention provides an MEMS suspended heating bearing structure for characterization of a projection electron microscope (TEM) and a preparation method of the MEMS suspended heating bearing structure. An SOI silicon wafer comprises device layer silicon, a buried oxide layer and substrate layer silicon. A first silicon oxide layer is arranged on the surface of the device layer, and a heating electrode is arranged on the first silicon oxide layer; the surface of the substrate layer is provided with a second silicon dioxide layer used for back patterning and etching control. The device layer silicon is provided with a first cavity to form a suspended supporting structure, and comprises a central bearing region, a transmission window region and a plurality of supporting beams connected with the central bearing region; the substrate layer silicon is etched from the back surface to form a second cavity, and the second cavity covers the bearing area, the transmission window and the projection range of the supporting beam in the thickness direction. And the second cavity is communicated with the first cavity, so that a through type cavity heat insulation structure is formed. According to the invention, while the permeability of the electron beam transmission window is maintained, stable bearing and controllable heating of the to-be-tested sample are realized, and the requirements of structural reliability, low power consumption and electrical parasitic suppression are considered.

The present invention relates to a method for preparing silicon monoxide nanopowder, and belongs to the technical field of non-metallic powder material preparation. The present invention uses SiO2 aerogel powder with a three-dimensional continuous structure surface as raw material, adsorbs hydrogen molecules on the surface of the powdered SiO2 aerogel, and axially feeds an argon-excited inductively coupled plasma torch. The hydrogen molecules are excited by the argon plasma torch to form a highly active hydrogen-rich plasma, which undergoes a reduction reaction with the SiO2 aerogel powder having the characteristics of high specific surface area and high porosity. The generated silicon monoxide vapor is quenched by argon downstream of the reaction device to obtain highly dispersible silicon monoxide nanopowder. This method overcomes the defects of the traditional solid-solid reaction method for preparing silicon monoxide, which has a slow reaction rate and low raw material conversion rate, and at the same time solves the safety problems existing in the traditional method of producing silicon monoxide by hydrogen reduction, thereby greatly improving production efficiency and safety.

Technologies for epitaxial perovskite ferroelectric transistors on buffered silicon are disclosed. In an illustrative embodiment, a barrier layer of titanium nitride is deposited on a silicon substrate using domain matching epitaxy, which allows the titanium nitride to grow with relatively low stress and a low number of defects, despite a 22% misfit between the lattice constant for titanium nitride and that lattice constant for silicon. The barrier layer prevents silicon monoxide (SiO) from forming when oxides are grown as later layers. In some embodiments, some or all of the titanium nitride barrier layer may be used as a gate electrode for the transistor.

The invention relates to a grid side wall and a preparation method and application thereof. The method comprises the following steps: depositing a first silicon oxide layer on a semiconductor substrate with a grid structure; depositing a silicon nitride layer on the first silicon oxide layer; depositing a second silicon oxide layer on the silicon nitride layer; the first silicon oxide layer and the second silicon oxide layer are deposited through a TEOS (tetraethyl orthosilicate) process, and the TEOS process comprises n times of precursor gas deposition and (n-1) times of clean gas purging. Stacked growth of the silicon dioxide layer is carried out through n times of precursor gas deposition and n-1 times of clean gas purging, surface silicon dioxide with poor uniformity is repeatedly eliminated, then silicon dioxide is supplemented, and the steps are repeated for several times so that the thickness uniformity of the side wall of the grid electrode can be optimized, and the step covering performance can be improved.

Microfabrication process with the following steps: Providing a structure (800) comprising a layer stack (30, 40, 50) containing, from bottom to top, a first silicon oxide layer (30), a stoichiometric silicon nitride layer (40), and a second silicon oxide layer (50), and a conductive material part (20) below the layer stack (30, 40, 50) and above a substrate (10); Producing a patterned etch mask layer (57) having an opening through this layer over the layer stack (30, 40, 50); and Producing a via cavity (59) extending through the layer stack (30, 40, 50) and downwards to a top side of the conductive material part (20) by isotropic etching of parts of the second silicon oxide layer (50), the silicon nitride layer (40) and the first silicon oxide layer (30) with an isotropic etching process in which an etch rate of the silicon nitride layer (40) is 1 / 10 to 1 / 2 of the etch rate of the first silicon oxide layer (30), wherein: the first silicon oxide layer (30) comprises a first silicon oxide material produced by decomposition of tetraethyl orthosilicate, the stoichiometric silicon nitride layer (40) is produced by chemical vapor deposition at a temperature of less than 300°C, in which a silicon precursor gas and a nitrogen precursor gas are used together to produce a silicon nitride material, and the second silicon oxide layer (50) comprises a second silicon oxide material produced by decomposition of tetraethyl orthosilicate.

The invention relates to the technical field of photovoltaic waste silicon regeneration, in particular to a preparation method of a pre-magnesium-silicon-oxygen negative electrode material based on photovoltaic waste silicon recycling, which comprises the following steps: obtaining waste silicon materials from different sources, and immersing the waste silicon materials with the purity of 80-96% into an alkaline solution of a dehydrogenation additive to obtain a pure silicon wafer; soaking the pure silicon wafer in a hydrofluoric acid solution, adding a sodium hydroxide solution, soaking the common-purity silicon wafer in aqua regia, filtering the solution, and locally melting a silicon rod by adopting high-frequency induction heating to obtain high-purity silicon powder with the purity of 99.9999%; the mixture is added into a vacuum furnace to be heated, silicon monoxide steam and magnesium steam are obtained, and SiO / alpha Mg is obtained through condensation; and adding the SiO / alpha Mg material into a CVD (Chemical Vapor Deposition) furnace to obtain the Mg-SiOx-C composite material. According to the photovoltaic waste silicon disclosed by the invention, the pollution of the photovoltaic waste silicon to the environment is avoided, the secondary pollution easily caused by an immature recovery technology is avoided, the recovery cost is effectively reduced, and the utilization of the photovoltaic waste silicon is improved.

The invention provides an electric furnace thermal reduction magnesium smelting co-production silicon carbon negative electrode material and a device thereof. MgO, SiO2, coke, biological pyrolytic carbon and methane gas are used as raw materials and are added into a magnesium smelting electric arc furnace for carbon thermal reduction to obtain mixed furnace gas; the mixed furnace gas enters a quenching condenser to be subjected to isentropic expansion and cooling treatment after being subjected to heat compensation through a heat compensation chamber, and solid-phase particles and cooling furnace gas are obtained; the solid-phase particles and the cooling furnace gas are cooled by a first cooling chamber to obtain ternary mixed powder, and the ternary mixed powder is subjected to the operations of metal magnesium vacuum distillation, magnesiothermic reduction and silicon monoxide disproportionation reaction offline; residual gas in the first cooling chamber is secondarily cooled through the second cooling chamber, and a primary material required by the silicon-carbon negative electrode material is co-produced in a gas-phase reaction mode in the magnesium smelting process, so that near-full continuous production of main links of the silicon-carbon negative electrode material and co-production coupling of carbon thermal reduction of magnesium metal are realized.

The invention discloses a preparation method of a carbon-coated lithium titanate composite silicon negative electrode material, which comprises the following steps: mixing raw materials, carrying out two-stage high-temperature calcination, converting a lithium source and a titanium source into lithium titanate, carrying out disproportionation reaction to convert silicon monoxide into silicon simple substance silicon dioxide, removing silicon dioxide by acid etching, and carrying out carbon coating by chemical vapor deposition to obtain the carbon-coated lithium titanate composite silicon negative electrode material. A final product is obtained. The porous lithium titanate has the characteristics of zero volume expansion, high safety, long service life and low energy density, and the nano silicon has the characteristics of high specific capacity, large volume expansion and poor cycle performance, so that the comprehensive performance of high capacity, long cycle and high safety is finally realized by utilizing the synergistic effect of the porous lithium titanate and the nano silicon; compared with a silane chemical vapor deposition silicon process, the process is safe and low in cost; compared with a process of respectively preparing porous lithium titanate and nano silicon and then mixing, the preparation method disclosed by the invention has the advantages that the problem that nano silicon is easy to agglomerate is avoided, and the electrochemical performance of a finished product is effectively improved.

The application belongs to the technical field of nanometer material preparation, and particularly relates to a kind of nanometer silicon-silicon monoxide negative electrode material with inlay structure and a preparation method thereof, wherein nanometer white carbon black is used as raw material, Al powder is used as reducing agent, NaCl, KCl and AlCl3 are used as auxiliary molten salt, the mixture is put into a tube furnace and heat treated in argon atmosphere, the heat treated product is soaked in hydrochloric acid to remove excess Al powder and molten salt, then repeatedly washed with distilled water and centrifuged, and vacuum dried to obtain the nanometer silicon-silicon monoxide negative electrode material with inlay structure. The preparation method is scientifically and reasonably designed, and the nanometer silicon is inlaid in silicon monoxide, which greatly limits the bulk expansion of nanometer silicon. When the material with this structure is used as battery negative electrode material, it can not only ensure that the theoretical specific capacity is higher than that of pure SiO x , but also can relieve the bulk expansion of pure silicon, so that the cycle stability and rate performance are more excellent.

The present invention relates to the field of anode materials for lithium-ion batteries, and discloses a preparation method of a silicon-based anode material with high capacity and high initial efficiency, comprising: (1) mixing silicon monoxide with glucose and gluconate to obtain precursor A; (2) dispersing precursor A in deionized water to dissolve glucose and gluconate in water to form a dispersion, and freeze-drying the dispersion to obtain a material to be sintered B; (3) placing the material to be sintered in an atmosphere of protective gas, heating and holding the temperature, and finally cooling to obtain a finished product of a silicon-oxygen anode material for a lithium-ion battery with high capacity and high initial efficiency. The silicon-oxygen anode material prepared by the present invention has the characteristics of high capacity and high initial efficiency. When at a voltage of 0.8V, the initial efficiency of the prepared silicon monoxide anode material reaches 85%, and the capacity is greater than 1300 mAh / g.

This invention discloses a low-resistivity silicon suboxide lithium-ion battery anode material and its preparation method. Fluorinated silicon suboxide is mixed with a carbon precursor and a solvent, ground until dry, and the solvent is removed to obtain an intermediate material. The intermediate material is then calcined in a protective gas atmosphere using gradient heating and / or gradient pressurization to obtain the anode material. This invention constructs a fluorine gradient hole structure, which preferentially transforms into a stable LiF-rich solid electrolyte interphase (SEI) film during electrochemical cycling, significantly reducing the lithium-ion diffusion barrier and interfacial charge transfer impedance. The gradient heating and / or pressurization sintering process carbonizes the carbon precursor in situ on the surface of the fluorinated layer, forming a dense and robust coating layer. This coating layer forms a strong interfacial bond through vacancy bonding and mechanical interlocking, buffering volume expansion. The anode material obtained using this invention exhibits excellent electrochemical performance and significantly reduces impedance.

The invention discloses a method for improving process defects of an image sensor and a characterization method, and the method for improving the process defects of the image sensor at least comprises the following steps: S1, providing a substrate, depositing a polycrystalline silicon layer on the substrate, and placing the substrate in a reaction cavity; s2, at least introducing a silicon source precursor and an oxygen source precursor into the reaction cavity, and depositing a silicon monoxide layer on the polycrystalline silicon layer; and S3, stopping introducing the silicon source precursor, introducing oxygen-containing gas into the reaction cavity, applying radio frequency power into the reaction cavity, exciting the oxygen-containing gas into oxygen-containing plasma under the action of the radio frequency power, and reacting the oxygen-containing plasma with the silicon-rich core on the surface of the silicon oxide layer to obtain the silicon-rich core on the surface of the silicon oxide layer. And removing the silicon-rich inner core. By using the method, the defect of the silicon-rich core on the surface of the substrate can be effectively removed, so that the product yield of the image sensor is improved.

The invention discloses a manufacturing method of a U-shaped groove, which is characterized in that a photoresist reserved on a field oxide in an X-direction photoetching process of the U-shaped groove can protect a hard mask on the field oxide of a Y-direction opening of a non-U-shaped groove region, the loss of the hard mask on the field oxide of the Y-direction opening of the non-U-shaped groove region cannot be caused, and a U-shaped groove process window is enlarged; in the process of performing X-direction silicon etching to form a U-shaped groove, silicon at an X-direction opening at a non-overlapping position of an X-direction opening pattern and a Y-direction opening pattern is protected by a mask first silicon oxide layer and a mask second silicon nitride layer, when the mask at the position is removed, the mask second silicon nitride layer is removed firstly, then the first silicon oxide layer is removed, and the first silicon oxide layer is removed after the mask second silicon nitride layer is removed. The SIN hard mask on the field oxide is not damaged, and the morphology standard of the U-shaped groove can be ensured.

The invention belongs to the technical field of micro electro mechanical systems and ultrasonic sensing, and discloses a CMUT preparation method and a CMUT. According to the method, a double-self-stop high-precision control system is established, the depth of the cavity is defined by using the thickness of the first silicon oxide layer, the doping layer is used as a stop surface during etching, and the problem of uneven etching depth is eliminated; and the atomic-scale uniformity of the thickness of the vibrating diaphragm is ensured by matching the doping layer with the wet etching selectivity. Besides, according to the method, through combination of a doping self-stop technology and a dual-common monocrystalline silicon wafer bonding technology, a high-performance CMUT with thickness uniformity and depth consistency is manufactured, and the preparation cost is remarkably reduced. Besides, the method structurally solves the problem of insulation failure, the thought that the structure and the function are defined through double wafers is adopted, the second silicon dioxide layer forming the insulation layer is arranged on the flat second wafer, and the risk that the insulation layer at the corner of the cavity is broken down due to insufficient step covering capacity in the traditional process is thoroughly eliminated.

The application discloses a kind of silicon monoxide negative materials and preparation method thereof, preparation method includes: after mixing organic carbon source and organic solvent stirring dissolution, with silicon monoxide and metal powder are mixed, after stirring, stationary, sintering is carried out in inert gas to obtain sintered material;Sintered material, solvent, acid are mixed, stirring, after solid-liquid separation, dry;After drying material, macromolecular polymer, organic solvent and conductive agent are mixed after stirring, microwave heating in inert gas.The application makes organic carbon source fully wrap silicon monoxide under liquid phase condition, reduces the agglomeration of material, increases the uniformity of coating layer;High-temperature sintering metal powder can partially reduce SiO2, the coating of organic carbon layer can reduce the volatilization of metal vapor, increase the reduction ratio of SiO2, improve the initial efficiency of silicon monoxide material;Microwave heating forms the secondary coating layer with high integrity and good mechanical properties on the surface of material, improves the long cycle stability of material.

The invention provides a preparation method of a silicon-based negative electrode material of a lithium ion battery. The preparation method comprises the following steps: mixing micron-sized silicon monoxide powder and a magnesium source, adding the mixture into an organic solution containing a dispersing agent, and mechanically stirring and uniformly mixing to obtain slurry; putting the slurry into a wet sand mill for mixing and grinding until the particle size of the materials in the slurry is less than 100 nm; and mixing the sanded material with an organic carbon source, graphite and a curing agent to obtain a carbon source-containing mixed material, stirring the mixed material to be dry, calcining in an inert gas atmosphere, and cooling to room temperature to obtain the lithium ion battery silicon-based negative electrode material. According to the negative electrode material prepared by the preparation method disclosed by the invention, the irreversible reaction of silicon particles in the first charging and discharging process is reduced, the first efficiency is improved, and meanwhile, the structural performance and the cycle performance of the negative electrode material are improved.

The invention provides a method for manufacturing a deep trench in a DRAM (Dynamic Random Access Memory), which comprises the following steps of: providing a substrate on which at least a first silicon oxide layer is formed; coating a photoresist layer on the surface of the first silicon oxide layer, and removing the photoresist layer on the edge of the substrate by using a photoetching EBR process; performing ion implantation of preset depth and preset concentration on the first silicon oxide layer exposed at the edge of the substrate to form an ion implantation layer, and removing the photoresist layer after ion implantation; photoetching and etching to form a deep groove, wherein the deep groove penetrates through the first silicon oxide layer and extends to a part of the substrate; filling a conductive layer in the deep trench, wherein the conductive layer covers the first silicon oxide layer; and chemically and mechanically grinding the conductive layer and the first silicon oxide layer and stopping in the first silicon oxide layer, and grinding to remove the ion implantation layer in the first silicon oxide layer. The ion implantation layer can protect the edge of the substrate, preparation is easy, the preparation cost is saved, and the stability of chemical mechanical polishing is improved.

Disclosed in the present invention are a regeneration method for a silicon-carbon negative electrode material of a spent lithium-ion battery and a use thereof. The method comprises the following steps: S1, mixing a silicon-carbon negative electrode material of a spent lithium-ion battery with an alkaline substance, and calcining in a non-oxidizing atmosphere to obtain a calcined mixture; S2, washing the calcined mixture to be neutral, and performing solid-liquid separation to obtain a graphite material and a silicon-containing solution; S3, adjusting the pH of the silicon-containing solution to a level causing precipitation of silicate ions, reacting under heating, and performing solid-liquid separation to collect a silicate precipitate; S4, mixing the silicate precipitate with elemental silicon, grinding the mixture into micrometer-scale powder, calcining the powder under vacuum conditions, and collecting generated silicon monoxide; and S5, performing carbon coating treatment on the silicon monoxide and the graphite material prepared in step S2 to obtain a regenerated silicon-carbon negative electrode material. In the solution, a spent silicon-carbon negative electrode material is successfully converted into a high-quality regenerated material, which can be directly applied to production and manufacturing of a new battery.

A method for producing a relief-like diffraction grating (1) includes forming a first silicon nitride film (10) on a silicon element (2), oxidizing the silicon element (2) using the first silicon nitride film (10) as a mask to change part of the silicon element (2) into a first silicon oxide film (15), removing the first silicon nitride film (10) and selectively removing the first silicon oxide film (15) to form a first step section (4a) in the silicon element (2).

The present invention provides a self-aligned secondary molding process method for preventing sidewall deformation. The method comprises growing a first silicon nitride layer, a first silicon oxide layer, a titanium nitride layer, a second silicon oxide layer, a second silicon nitride layer, and a polysilicon layer sequentially from bottom to top on a through-hole layer. The polysilicon layer is used as a hard mask to define a pattern and the second silicon nitride layer is etched to the upper surface of the second silicon oxide layer, forming the second silicon nitride layer into multiple silicon nitride pattern structures. Sidewalls are formed on the sidewalls of the multiple silicon nitride pattern structures. The silicon nitride pattern structures within the sidewalls are removed. The second silicon oxide layer and the titanium nitride layer are etched using the sidewalls as a hard mask to form a titanium nitride pattern structure. The first silicon oxide layer and the first silicon nitride layer are etched using the titanium nitride pattern structure as a hard mask to pattern the first silicon oxide layer and the first silicon nitride layer. By integrating the composite film layers, the present invention achieves stress matching between the film layers at high temperatures, completely resolving sidewall tilt and achieving pattern definition for secondary molding.

The invention relates to a fast-charge type silicon monoxide negative electrode material and a preparation method and application thereof, and the preparation method of the fast-charge type silicon monoxide negative electrode material comprises the following steps: mixing a lithium lithiation reagent and a silicon monoxide material for preliminary chemical lithiation, and then preparing the fast-charge type silicon monoxide negative electrode material through electrochemical lithiation, the non-bridging oxygen content ([non-bridging oxygen] / Si) is greater than or equal to 3.26. The fast-charging type silicon monoxide negative electrode material provided by the invention can be used for a fast-charging type lithium ion battery, and an interface of lithium oxide and lithium silicate is pre-formed in a chemical lithiation process, so that side reaction between silicon monoxide and an electrolyte is relieved; the high non-bridging oxygen silicate generated in the electrochemical lithiation process is beneficial to forming a rapid lithium ion channel in the silicon monoxide material, so that the diffusion coefficient of lithium ions in the material is improved, and rapid lithiation and delithiation of the silicon monoxide are realized; the prepared silicon monoxide negative electrode has high energy density and also has excellent fast charging capability under high current density.

The invention relates to the technical field of lithium ion battery negative electrode materials, and discloses an iron / nitrogen co-doped silicon monoxide composite negative electrode material and a preparation method thereof.The method comprises the steps that in an alkaline buffer solution, dopamine is subjected to a self-polymerization reaction on the surfaces of silicon monoxide particles and is synchronously coordinated with iron salt, and the iron / nitrogen co-doped silicon monoxide composite negative electrode material is obtained; the preparation method comprises the following steps: firstly, preparing a polydopamine-iron (SiOx-coated PDA-Fe) precursor by using a hydrothermal method to form a uniform SiOx-coated polydopamine-iron (SiOx-coated PDA-Fe) precursor, then, carrying out two-step heat treatment on the precursor in an inert atmosphere to synchronously realize iron-catalyzed carbon layer graphitization and silicon monoxide disproportionation reaction, and finally, carrying out acid pickling to obtain a target product. According to the preparation method, through the precise process of step-by-step heat treatment, the coating layer is stably carbonized firstly, then material activation and conductive network construction are synchronously completed, a unique core-shell structure and a point-line-surface three-dimensional conductive buffer network are formed, the prepared material has high first efficiency, excellent rate capability and ultra-long cycle life, the process is efficient, and the preparation method is suitable for industrial production. The method is suitable for large-scale production.

The present application relates to the field of lithium batteries, and more specifically, to a silicon-oxygen negative electrode material, a preparation method thereof, and a negative electrode for a secondary battery. The carbon-coated silicon monoxide and the metal material are heat-treated so that at least a portion of the silicon monoxide in the carbon-coated silicon monoxide reacts with the metal material to generate silicate and silicon element, thereby obtaining a silicon-oxygen negative electrode material. Silicate does not have the ability to insert lithium, which not only inhibits the volume expansion of the material, but also improves the initial effect of the silicon-oxygen negative electrode material. In addition, during the reaction between the metal material and the silicon monoxide, due to the presence of the carbon layer, the carbon layer can slow down the reaction process, thereby avoiding the generation of a large amount of heat and causing the silicon grain size to be too large. The smaller silicon grain size can make the silicon-oxygen negative electrode material exhibit better cycle performance.

The invention provides anti-reflection glass and a preparation method and application thereof.The anti-reflection glass comprises a substrate layer and a composite coating layer arranged on the surface of at least one side of the substrate layer, and the composite coating layer comprises a first silicon nitride layer, a first silicon oxide layer, a second silicon nitride layer and a second silicon oxide layer which are sequentially stacked; wherein the first silicon nitride layer of the composite coating layer is connected with the substrate layer. The silicon nitride layers and the silicon oxide layers are alternately arranged in a laminated mode, it can be guaranteed that through optical path difference interference cancellation, reflected light with the specific wavelength is reduced, meanwhile, film layer stress is reduced, film layer cracking is avoided, and the structural stability is improved.