104 results about "Silicon monoxide" patented technology

The application provides a negative electrode material and a preparation method thereof and a secondary battery, and relates to the technical field of battery materials. The negative electrode material comprises a silicon-based inner core and a carbon layer coated on the surface of the silicon-based inner core, wherein the silicon-based inner core comprises nanosilicon and a silicate containing a metal element M; the negative electrode material is subjected to section analysis and energy spectrum analysis, and meets the conditions of k1<=10, k2<=5 and 0.1 The preparation method of the negative electrode material comprises the following steps: heating and evaporating pre-disproportionated silicon monoxide material and M metal source material to obtain silicon monoxide gas and metal source gas; mixing and condensing the two kinds of gas to obtain an inner core material; and performing carbon coating treatment to obtain the negative electrode material. In the negative electrode material prepared by the application, the metal silicate effectively separates the nanosilicon domain and the silicon oxide domain, and is uniformly distributed, and the negative electrode material has high initial efficiency and excellent cycle performance.

The invention provides a porous carbon material for a silicon-carbon negative electrode. The porous carbon material comprises a porous carbon skeleton with a graded pore structure; the silicon-based active units are uniformly dispersed in mesopores and macropores of the porous carbon skeleton, and each silicon-based active unit is composed of a nanometer silicon particle inner core and a silicon monoxide layer coating the surface of the nanometer silicon particle inner core; and the conductive reinforced shell is a gas-phase cracking carbon layer which is completely coated on the outer surface of the complex of the porous carbon skeleton and the silicon-based active unit. The preparation method of the porous carbon material comprises the following steps: preparing a porous carbon skeleton precursor, carrying out graded pore-forming treatment, carrying out surface functionalization treatment, compounding the silicon-based active units, constructing a conductive reinforced shell, carrying out element doping treatment and functionalizing pore channels. The cycle stability and environmental protection property of the silicon-carbon negative electrode are synergistically improved through graded pore constrained expansion, carboxyl bonding stable interface and vapor deposition carbon layer optimized conductivity.

A technique enabling wet etching of a first silicon oxide film with high selectivity with respect to a metal film and a second silicon oxide film is provided. A substrate processing method of wet-etching a substrate having a stacked structure including a metal film, a first silicon oxide film, and a second silicon oxide film having a moisture content lower than that of the first silicon oxide film is provided. The substrate processing method includes performing an etching while increasing etching selectivity of the first silicon oxide film with respect to the second silicon oxide film and the metal film by supplying an etching liquid, which is prepared by diluting sulfuric acid, hydrogen peroxide and hydrofluoric acid in an anhydrous organic solvent, to the substrate such that the metal film, the first silicon oxide film, and the second silicon oxide film are simultaneously exposed to the etching liquid.

Embodiments of this disclosure relate to a method for selectively depositing polysilicon after forming a fluid polymer film to protect a substrate surface within a feature. A first silicon (Si) layer is deposited by physical vapor deposition (PVD). A fluid polymer film is formed on the first silicon (Si) layer on the bottom. A portion of the first silicon (Si) layer is selectively removed from the top surface and at least one side wall. The fluid polymer film is removed. In some embodiments, a second silicon (Si) layer is selectively deposited on the first silicon (Si) layer to fill the feature. In some embodiments, the remaining portion of the first silicon (Si) layer on the bottom is oxidized to form a first silicon oxide (SiO₂) on the bottom. x ) forms a layer, and a silicon (Si) layer or a second silicon oxide (SiO) layer x The ) layer is the first silicon oxide (SiO x It is deposited on top of layers.

The invention provides an MEMS suspended heating bearing structure for characterization of a projection electron microscope (TEM) and a preparation method of the MEMS suspended heating bearing structure. An SOI silicon wafer comprises device layer silicon, a buried oxide layer and substrate layer silicon. A first silicon oxide layer is arranged on the surface of the device layer, and a heating electrode is arranged on the first silicon oxide layer; the surface of the substrate layer is provided with a second silicon dioxide layer used for back patterning and etching control. The device layer silicon is provided with a first cavity to form a suspended supporting structure, and comprises a central bearing region, a transmission window region and a plurality of supporting beams connected with the central bearing region; the substrate layer silicon is etched from the back surface to form a second cavity, and the second cavity covers the bearing area, the transmission window and the projection range of the supporting beam in the thickness direction. And the second cavity is communicated with the first cavity, so that a through type cavity heat insulation structure is formed. According to the invention, while the permeability of the electron beam transmission window is maintained, stable bearing and controllable heating of the to-be-tested sample are realized, and the requirements of structural reliability, low power consumption and electrical parasitic suppression are considered.

Technologies for epitaxial perovskite ferroelectric transistors on buffered silicon are disclosed. In an illustrative embodiment, a barrier layer of titanium nitride is deposited on a silicon substrate using domain matching epitaxy, which allows the titanium nitride to grow with relatively low stress and a low number of defects, despite a 22% misfit between the lattice constant for titanium nitride and that lattice constant for silicon. The barrier layer prevents silicon monoxide (SiO) from forming when oxides are grown as later layers. In some embodiments, some or all of the titanium nitride barrier layer may be used as a gate electrode for the transistor.

The invention relates to a grid side wall and a preparation method and application thereof. The method comprises the following steps: depositing a first silicon oxide layer on a semiconductor substrate with a grid structure; depositing a silicon nitride layer on the first silicon oxide layer; depositing a second silicon oxide layer on the silicon nitride layer; the first silicon oxide layer and the second silicon oxide layer are deposited through a TEOS (tetraethyl orthosilicate) process, and the TEOS process comprises n times of precursor gas deposition and (n-1) times of clean gas purging. Stacked growth of the silicon dioxide layer is carried out through n times of precursor gas deposition and n-1 times of clean gas purging, surface silicon dioxide with poor uniformity is repeatedly eliminated, then silicon dioxide is supplemented, and the steps are repeated for several times so that the thickness uniformity of the side wall of the grid electrode can be optimized, and the step covering performance can be improved.

The invention relates to the technical field of photovoltaic waste silicon regeneration, in particular to a preparation method of a pre-magnesium-silicon-oxygen negative electrode material based on photovoltaic waste silicon recycling, which comprises the following steps: obtaining waste silicon materials from different sources, and immersing the waste silicon materials with the purity of 80-96% into an alkaline solution of a dehydrogenation additive to obtain a pure silicon wafer; soaking the pure silicon wafer in a hydrofluoric acid solution, adding a sodium hydroxide solution, soaking the common-purity silicon wafer in aqua regia, filtering the solution, and locally melting a silicon rod by adopting high-frequency induction heating to obtain high-purity silicon powder with the purity of 99.9999%; the mixture is added into a vacuum furnace to be heated, silicon monoxide steam and magnesium steam are obtained, and SiO / alpha Mg is obtained through condensation; and adding the SiO / alpha Mg material into a CVD (Chemical Vapor Deposition) furnace to obtain the Mg-SiOx-C composite material. According to the photovoltaic waste silicon disclosed by the invention, the pollution of the photovoltaic waste silicon to the environment is avoided, the secondary pollution easily caused by an immature recovery technology is avoided, the recovery cost is effectively reduced, and the utilization of the photovoltaic waste silicon is improved.

The invention provides an electric furnace thermal reduction magnesium smelting co-production silicon carbon negative electrode material and a device thereof. MgO, SiO2, coke, biological pyrolytic carbon and methane gas are used as raw materials and are added into a magnesium smelting electric arc furnace for carbon thermal reduction to obtain mixed furnace gas; the mixed furnace gas enters a quenching condenser to be subjected to isentropic expansion and cooling treatment after being subjected to heat compensation through a heat compensation chamber, and solid-phase particles and cooling furnace gas are obtained; the solid-phase particles and the cooling furnace gas are cooled by a first cooling chamber to obtain ternary mixed powder, and the ternary mixed powder is subjected to the operations of metal magnesium vacuum distillation, magnesiothermic reduction and silicon monoxide disproportionation reaction offline; residual gas in the first cooling chamber is secondarily cooled through the second cooling chamber, and a primary material required by the silicon-carbon negative electrode material is co-produced in a gas-phase reaction mode in the magnesium smelting process, so that near-full continuous production of main links of the silicon-carbon negative electrode material and co-production coupling of carbon thermal reduction of magnesium metal are realized.

The invention discloses a preparation method of a carbon-coated lithium titanate composite silicon negative electrode material, which comprises the following steps: mixing raw materials, carrying out two-stage high-temperature calcination, converting a lithium source and a titanium source into lithium titanate, carrying out disproportionation reaction to convert silicon monoxide into silicon simple substance silicon dioxide, removing silicon dioxide by acid etching, and carrying out carbon coating by chemical vapor deposition to obtain the carbon-coated lithium titanate composite silicon negative electrode material. A final product is obtained. The porous lithium titanate has the characteristics of zero volume expansion, high safety, long service life and low energy density, and the nano silicon has the characteristics of high specific capacity, large volume expansion and poor cycle performance, so that the comprehensive performance of high capacity, long cycle and high safety is finally realized by utilizing the synergistic effect of the porous lithium titanate and the nano silicon; compared with a silane chemical vapor deposition silicon process, the process is safe and low in cost; compared with a process of respectively preparing porous lithium titanate and nano silicon and then mixing, the preparation method disclosed by the invention has the advantages that the problem that nano silicon is easy to agglomerate is avoided, and the electrochemical performance of a finished product is effectively improved.

The application belongs to the technical field of nanometer material preparation, and particularly relates to a kind of nanometer silicon-silicon monoxide negative electrode material with inlay structure and a preparation method thereof, wherein nanometer white carbon black is used as raw material, Al powder is used as reducing agent, NaCl, KCl and AlCl3 are used as auxiliary molten salt, the mixture is put into a tube furnace and heat treated in argon atmosphere, the heat treated product is soaked in hydrochloric acid to remove excess Al powder and molten salt, then repeatedly washed with distilled water and centrifuged, and vacuum dried to obtain the nanometer silicon-silicon monoxide negative electrode material with inlay structure. The preparation method is scientifically and reasonably designed, and the nanometer silicon is inlaid in silicon monoxide, which greatly limits the bulk expansion of nanometer silicon. When the material with this structure is used as battery negative electrode material, it can not only ensure that the theoretical specific capacity is higher than that of pure SiO x , but also can relieve the bulk expansion of pure silicon, so that the cycle stability and rate performance are more excellent.

This invention discloses a low-resistivity silicon suboxide lithium-ion battery anode material and its preparation method. Fluorinated silicon suboxide is mixed with a carbon precursor and a solvent, ground until dry, and the solvent is removed to obtain an intermediate material. The intermediate material is then calcined in a protective gas atmosphere using gradient heating and / or gradient pressurization to obtain the anode material. This invention constructs a fluorine gradient hole structure, which preferentially transforms into a stable LiF-rich solid electrolyte interphase (SEI) film during electrochemical cycling, significantly reducing the lithium-ion diffusion barrier and interfacial charge transfer impedance. The gradient heating and / or pressurization sintering process carbonizes the carbon precursor in situ on the surface of the fluorinated layer, forming a dense and robust coating layer. This coating layer forms a strong interfacial bond through vacancy bonding and mechanical interlocking, buffering volume expansion. The anode material obtained using this invention exhibits excellent electrochemical performance and significantly reduces impedance.

The invention discloses a method for improving process defects of an image sensor and a characterization method, and the method for improving the process defects of the image sensor at least comprises the following steps: S1, providing a substrate, depositing a polycrystalline silicon layer on the substrate, and placing the substrate in a reaction cavity; s2, at least introducing a silicon source precursor and an oxygen source precursor into the reaction cavity, and depositing a silicon monoxide layer on the polycrystalline silicon layer; and S3, stopping introducing the silicon source precursor, introducing oxygen-containing gas into the reaction cavity, applying radio frequency power into the reaction cavity, exciting the oxygen-containing gas into oxygen-containing plasma under the action of the radio frequency power, and reacting the oxygen-containing plasma with the silicon-rich core on the surface of the silicon oxide layer to obtain the silicon-rich core on the surface of the silicon oxide layer. And removing the silicon-rich inner core. By using the method, the defect of the silicon-rich core on the surface of the substrate can be effectively removed, so that the product yield of the image sensor is improved.

The invention discloses a manufacturing method of a U-shaped groove, which is characterized in that a photoresist reserved on a field oxide in an X-direction photoetching process of the U-shaped groove can protect a hard mask on the field oxide of a Y-direction opening of a non-U-shaped groove region, the loss of the hard mask on the field oxide of the Y-direction opening of the non-U-shaped groove region cannot be caused, and a U-shaped groove process window is enlarged; in the process of performing X-direction silicon etching to form a U-shaped groove, silicon at an X-direction opening at a non-overlapping position of an X-direction opening pattern and a Y-direction opening pattern is protected by a mask first silicon oxide layer and a mask second silicon nitride layer, when the mask at the position is removed, the mask second silicon nitride layer is removed firstly, then the first silicon oxide layer is removed, and the first silicon oxide layer is removed after the mask second silicon nitride layer is removed. The SIN hard mask on the field oxide is not damaged, and the morphology standard of the U-shaped groove can be ensured.

The invention belongs to the technical field of micro electro mechanical systems and ultrasonic sensing, and discloses a CMUT preparation method and a CMUT. According to the method, a double-self-stop high-precision control system is established, the depth of the cavity is defined by using the thickness of the first silicon oxide layer, the doping layer is used as a stop surface during etching, and the problem of uneven etching depth is eliminated; and the atomic-scale uniformity of the thickness of the vibrating diaphragm is ensured by matching the doping layer with the wet etching selectivity. Besides, according to the method, through combination of a doping self-stop technology and a dual-common monocrystalline silicon wafer bonding technology, a high-performance CMUT with thickness uniformity and depth consistency is manufactured, and the preparation cost is remarkably reduced. Besides, the method structurally solves the problem of insulation failure, the thought that the structure and the function are defined through double wafers is adopted, the second silicon dioxide layer forming the insulation layer is arranged on the flat second wafer, and the risk that the insulation layer at the corner of the cavity is broken down due to insufficient step covering capacity in the traditional process is thoroughly eliminated.

The application discloses a kind of silicon monoxide negative materials and preparation method thereof, preparation method includes: after mixing organic carbon source and organic solvent stirring dissolution, with silicon monoxide and metal powder are mixed, after stirring, stationary, sintering is carried out in inert gas to obtain sintered material;Sintered material, solvent, acid are mixed, stirring, after solid-liquid separation, dry;After drying material, macromolecular polymer, organic solvent and conductive agent are mixed after stirring, microwave heating in inert gas.The application makes organic carbon source fully wrap silicon monoxide under liquid phase condition, reduces the agglomeration of material, increases the uniformity of coating layer;High-temperature sintering metal powder can partially reduce SiO2, the coating of organic carbon layer can reduce the volatilization of metal vapor, increase the reduction ratio of SiO2, improve the initial efficiency of silicon monoxide material;Microwave heating forms the secondary coating layer with high integrity and good mechanical properties on the surface of material, improves the long cycle stability of material.

The invention provides a preparation method of a silicon-based negative electrode material of a lithium ion battery. The preparation method comprises the following steps: mixing micron-sized silicon monoxide powder and a magnesium source, adding the mixture into an organic solution containing a dispersing agent, and mechanically stirring and uniformly mixing to obtain slurry; putting the slurry into a wet sand mill for mixing and grinding until the particle size of the materials in the slurry is less than 100 nm; and mixing the sanded material with an organic carbon source, graphite and a curing agent to obtain a carbon source-containing mixed material, stirring the mixed material to be dry, calcining in an inert gas atmosphere, and cooling to room temperature to obtain the lithium ion battery silicon-based negative electrode material. According to the negative electrode material prepared by the preparation method disclosed by the invention, the irreversible reaction of silicon particles in the first charging and discharging process is reduced, the first efficiency is improved, and meanwhile, the structural performance and the cycle performance of the negative electrode material are improved.

Disclosed in the present invention are a regeneration method for a silicon-carbon negative electrode material of a spent lithium-ion battery and a use thereof. The method comprises the following steps: S1, mixing a silicon-carbon negative electrode material of a spent lithium-ion battery with an alkaline substance, and calcining in a non-oxidizing atmosphere to obtain a calcined mixture; S2, washing the calcined mixture to be neutral, and performing solid-liquid separation to obtain a graphite material and a silicon-containing solution; S3, adjusting the pH of the silicon-containing solution to a level causing precipitation of silicate ions, reacting under heating, and performing solid-liquid separation to collect a silicate precipitate; S4, mixing the silicate precipitate with elemental silicon, grinding the mixture into micrometer-scale powder, calcining the powder under vacuum conditions, and collecting generated silicon monoxide; and S5, performing carbon coating treatment on the silicon monoxide and the graphite material prepared in step S2 to obtain a regenerated silicon-carbon negative electrode material. In the solution, a spent silicon-carbon negative electrode material is successfully converted into a high-quality regenerated material, which can be directly applied to production and manufacturing of a new battery.

A method for producing a relief-like diffraction grating (1) includes forming a first silicon nitride film (10) on a silicon element (2), oxidizing the silicon element (2) using the first silicon nitride film (10) as a mask to change part of the silicon element (2) into a first silicon oxide film (15), removing the first silicon nitride film (10) and selectively removing the first silicon oxide film (15) to form a first step section (4a) in the silicon element (2).

The invention relates to a fast-charge type silicon monoxide negative electrode material and a preparation method and application thereof, and the preparation method of the fast-charge type silicon monoxide negative electrode material comprises the following steps: mixing a lithium lithiation reagent and a silicon monoxide material for preliminary chemical lithiation, and then preparing the fast-charge type silicon monoxide negative electrode material through electrochemical lithiation, the non-bridging oxygen content ([non-bridging oxygen] / Si) is greater than or equal to 3.26. The fast-charging type silicon monoxide negative electrode material provided by the invention can be used for a fast-charging type lithium ion battery, and an interface of lithium oxide and lithium silicate is pre-formed in a chemical lithiation process, so that side reaction between silicon monoxide and an electrolyte is relieved; the high non-bridging oxygen silicate generated in the electrochemical lithiation process is beneficial to forming a rapid lithium ion channel in the silicon monoxide material, so that the diffusion coefficient of lithium ions in the material is improved, and rapid lithiation and delithiation of the silicon monoxide are realized; the prepared silicon monoxide negative electrode has high energy density and also has excellent fast charging capability under high current density.

The invention relates to the technical field of lithium ion battery negative electrode materials, and discloses an iron / nitrogen co-doped silicon monoxide composite negative electrode material and a preparation method thereof.The method comprises the steps that in an alkaline buffer solution, dopamine is subjected to a self-polymerization reaction on the surfaces of silicon monoxide particles and is synchronously coordinated with iron salt, and the iron / nitrogen co-doped silicon monoxide composite negative electrode material is obtained; the preparation method comprises the following steps: firstly, preparing a polydopamine-iron (SiOx-coated PDA-Fe) precursor by using a hydrothermal method to form a uniform SiOx-coated polydopamine-iron (SiOx-coated PDA-Fe) precursor, then, carrying out two-step heat treatment on the precursor in an inert atmosphere to synchronously realize iron-catalyzed carbon layer graphitization and silicon monoxide disproportionation reaction, and finally, carrying out acid pickling to obtain a target product. According to the preparation method, through the precise process of step-by-step heat treatment, the coating layer is stably carbonized firstly, then material activation and conductive network construction are synchronously completed, a unique core-shell structure and a point-line-surface three-dimensional conductive buffer network are formed, the prepared material has high first efficiency, excellent rate capability and ultra-long cycle life, the process is efficient, and the preparation method is suitable for industrial production. The method is suitable for large-scale production.

The invention provides anti-reflection glass and a preparation method and application thereof.The anti-reflection glass comprises a substrate layer and a composite coating layer arranged on the surface of at least one side of the substrate layer, and the composite coating layer comprises a first silicon nitride layer, a first silicon oxide layer, a second silicon nitride layer and a second silicon oxide layer which are sequentially stacked; wherein the first silicon nitride layer of the composite coating layer is connected with the substrate layer. The silicon nitride layers and the silicon oxide layers are alternately arranged in a laminated mode, it can be guaranteed that through optical path difference interference cancellation, reflected light with the specific wavelength is reduced, meanwhile, film layer stress is reduced, film layer cracking is avoided, and the structural stability is improved.

The application discloses a P-type TOPCon cell and a preparation method thereof. The P-type TOPCon cell takes P-type crystalline silicon as a substrate, and the front surface of the P-type TOPCon cell comprises, from inside to outside, a tunneling oxide layer, a phosphorus-doped polysilicon stack and a front composite passivation layer. The phosphorus-doped polysilicon stack comprises, from inside to outside, a first phosphorus-doped polysilicon film, a first silicon oxide film, a second phosphorus-doped polysilicon film, a second silicon oxide film and a third phosphorus-doped polysilicon film. The phosphorus doping concentration and the thickness of the third phosphorus-doped polysilicon film are greater than those of the first phosphorus-doped polysilicon film. The preparation method comprises preparing the tunneling oxide layer, the phosphorus-doped polysilicon stack and the front composite passivation layer on the front surface of the P-type crystalline silicon. The P-type TOPCon cell has the advantages of excellent anti-space radiation capability, high conversion efficiency, long service life and the like. As a novel solar cell with excellent performance, the P-type TOPCon cell can adapt to a harsh space environment and meet the demand of modern spacecraft for high-performance power supplies.

The invention provides a preparation method and application of a pre-magnesium silicon oxide negative electrode material, belongs to the technical field of lithium ion batteries, and aims to solve the technical problems of poor initial coulombic efficiency and stability of silicon monoxide. The preparation method comprises the following steps: S1, preparing an alkoxy silane-ethanol / water solution and an alcohol-based magnesium salt-ethanol solution; s2, dropwise adding the alcohol-based magnesium salt-ethanol solution in the step S1 into the alkoxy silane-ethanol / aqueous solution in the step S1, carrying out hydrolysis-condensation chain chemical reaction on alkoxy silane, centrifuging, and drying to obtain a pre-magnesium-silicon-oxygen precursor; and S3, carrying out high-temperature calcination on the pre-magnesium silica precursor obtained in S2 in an inert atmosphere to obtain the pre-magnesium silica composite material. The pre-magnesium silicon-oxygen composite material can be used as a lithium ion battery negative electrode, can effectively improve the initial coulombic efficiency of the silicon-oxygen negative electrode, and considers the volume expansion and cyclicity of the material.

The application discloses a method and device for preparing pre-lithiated silicon monoxide powder, wherein silane gas passes through different temperature zones in the ascending process in the inner cavity of a fluidized bed, first forms a nanoscale nucleus, is combined with atomized silicon source, forms stable nanoscale silicon monoxide particles, then passes through atomized pre-lithium solution, completes pre-lithiation, and then passes through secondary granulation to form micron-level silicon monoxide particles with stable structure; in the descending process, the particle surface uniformly adsorbs the pre-lithium solution when passing through the pre-lithium solution atomization zone, completes the pre-lithiation of the secondary particles, and thus the pre-lithiated silicon monoxide powder is obtained. The method and device can synchronously complete the preparation and pre-lithiation of the silicon monoxide material, the prepared particles have stable structure and uniform internal lithium ion distribution, do not need secondary processing as a negative electrode material of a lithium ion battery, and the material has the characteristics of high initial efficiency and long cycle.

A negative electrode active material for lithium secondary batteries is provided, containing magnesium silicate and crystalline silicon, optionally with magnesium oxide in specific weight ratios. It is produced by mixing silicon, silicon monoxide, and magnesium hydride, followed by heat treatment to create a stable magnesium silicate phase while retaining the crystalline silicon. This increases initial efficiency, reduces irreversible capacity loss, and improves charge / discharge cycle life. The process can further include pulverizing and, optionally, carbon coating of the heat-treated product to tailor the pore structure and electrical conductivity. The resulting electrode material offers high energy density and good conductivity, enabling improved performance in lithium-ion cells.

Embodiments of the disclosure relate to methods of selectively depositing polysilicon after forming a flowable polymer film to protect a substrate surface within a feature. A first silicon (Si) layer is deposited by physical vapor deposition (PVD). The flowable polymer film is formed on the first silicon (Si) layer on the bottom. A portion of the first silicon (Si) layer is selectively removed from the top surface and the at least one sidewall. The flowable polymer film is removed. In some embodiments, a second silicon (Si) layer is selectively deposited on the first silicon (Si) layer to fill the feature. In some embodiments, the remaining portion of the first silicon (Si) layer on the bottom is oxidized to form a first silicon oxide (SiOx) layer on the bottom, and a silicon (Si) layer or a second silicon oxide (SiOx) layer is deposited on the first silicon oxide (SiOx) layer.

A film forming method according to one embodiment of the present disclosure comprises: preparing a substrate that has a first region in which a first silicon oxide film is provided and a second region in which a silicon film is provided; removing a natural oxide film that is formed on the surface of the silicon film by supplying a halogen-containing gas to the substrate; causing a metal catalyst-containing substance to be selectively adsorbed on the surface of the first silicon oxide film with respect to the surface of the silicon film by supplying a metal catalyst-containing gas to the substrate from which the natural oxide film has been removed; and forming a second silicon oxide film by reacting a silanol-containing gas with the metal catalyst-containing substance adsorbed on the surface of the first silicon oxide film by supplying the silanol-containing gas to the substrate on which the metal catalyst-containing substance has been adsorbed.

Provided is a film-equipped translucent base material comprising a translucent base material and a film that is provided on a surface of the translucent base material, wherein the film includes first silicon oxide particles that have an average particle size of greater than 2 μm and second silicon oxide particles that have an average particle size of 0.3 μm to 1.0 μm, the surface has a first region and a second region, the first silicon oxide particles are present in the film on the first region, the first silicon oxide particles are not present in the film on the second region, and the second silicon oxide particles are present in at least a portion of the second region.

The application provides a kind of porous carbon material for silicon-carbon negative electrode, comprising: porous carbon framework: with hierarchical pore structure;Silicon-based active unit: uniformly dispersed in the mesopore and macropore of the porous carbon framework, the silicon-based active unit is composed of nanosilicon particle core and silicon monoxide layer coated on its surface;Conductive reinforcement shell: gas phase cracking carbon layer completely coated on the outer surface of the composite of porous carbon framework and silicon-based active unit. It also includes the preparation method steps of porous carbon material: porous carbon framework precursor preparation, hierarchical pore making treatment, surface functionalization treatment, silicon-based active unit composite, conductive reinforcement shell construction, element doping treatment, pore functionalization. The application cooperatively improves the cycle stability and environmental friendliness of silicon-carbon negative electrode by hierarchical pore constraint expansion, carboxyl bonding stable interface and gas phase deposition carbon layer optimized conductivity.